CN117198965A - Carrier adsorption mechanism of plasma processing system - Google Patents
Carrier adsorption mechanism of plasma processing system Download PDFInfo
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- CN117198965A CN117198965A CN202210617795.5A CN202210617795A CN117198965A CN 117198965 A CN117198965 A CN 117198965A CN 202210617795 A CN202210617795 A CN 202210617795A CN 117198965 A CN117198965 A CN 117198965A
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- 238000012545 processing Methods 0.000 title claims abstract description 52
- 230000007246 mechanism Effects 0.000 title claims abstract description 44
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000001816 cooling Methods 0.000 claims description 8
- 239000012809 cooling fluid Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 17
- 230000002745 absorbent Effects 0.000 description 11
- 239000002250 absorbent Substances 0.000 description 11
- 238000000605 extraction Methods 0.000 description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
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- 238000007747 plating Methods 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
The invention provides a carrier adsorption mechanism of a plasma processing system, which is arranged in a vacuum plasma processing cavity and is used for carrying out plasma processing on a substrate to be processed, a first electrode is arranged in the vacuum plasma processing cavity, and the carrier adsorption mechanism comprises a second electrode plate and at least one adsorption piece, wherein the second electrode plate and the at least one adsorption piece are arranged corresponding to the first electrode. A plasma processing space is formed between the second electrode plate and the first electrode, and an additional area and an exposed area are formed on one surface of the second electrode plate adjacent to the plasma processing space; the at least one adsorption piece is arranged in the additional area and adsorbs the substrate to be processed so as to fix the substrate to be processed on the second electrode plate. Therefore, the invention has the advantages of no warpage of the substrate to be processed and rapid heat dissipation.
Description
Technical Field
The present invention relates to an adsorption mechanism, and more particularly to a carrier adsorption mechanism for a plasma processing system.
Background
Along with the transition of the age, the technology industry is increasingly advanced, and particularly, the semiconductor industry is more mature. In the process of manufacturing the chip and the circuit carrier, the surface cleaning and etching processes are required to be performed on the object to be processed, and besides the conventional dry etching and wet etching techniques, the plasma process technique also occupies a place in the semiconductor and circuit board industries.
In the plasma process, the circuit carrier is usually clamped and pulled in the plasma process chamber to prevent the circuit carrier from warping due to the warpage caused by thermal factors. However, the conventional clamping and pulling support is a linkage action, so that the situation that the clamping is too tight and cannot be pulled away easily occurs, or the pulling force is larger than the clamping force to cause a slippage problem, so that the circuit carrier cannot be fixed in the plasma processing cavity in a plasma processing, the circuit carrier still generates a warpage condition, and the processing yield of the circuit carrier is reduced.
Disclosure of Invention
The main objective of the present invention is to solve the problem of the conventional circuit carrier board that the yield of the circuit carrier board is reduced due to the warpage caused by the thermal factor in the plasma process.
In order to achieve the above object, one embodiment of the present invention provides a carrier adsorption mechanism of a plasma processing system, which is disposed in a vacuum plasma processing chamber and is used for performing a plasma processing on a substrate to be processed, wherein a first electrode is disposed in the vacuum plasma processing chamber, and the carrier adsorption mechanism comprises a second electrode plate and at least one adsorption member, wherein the second electrode plate is disposed corresponding to the first electrode. A plasma processing space is formed between the second electrode plate and the first electrode, and an additional area and an exposed area are formed on one surface of the second electrode plate adjacent to the plasma processing space; the at least one adsorption piece is arranged in the additional area and adsorbs the substrate to be processed so as to fix the substrate to be processed on the second electrode plate.
In another embodiment of the present invention, the additional area, the exposed area and the adsorption element are respectively provided in plurality, and the additional area and the exposed area are formed on the surface of the second electrode plate in a spaced arrangement.
In another embodiment of the present invention, the additional area and the exposed area are elongated and are arranged in a stripe shape on the surface of the second electrode plate.
In another embodiment of the present invention, the additional area and the exposed area are square, and are arranged in an array on the surface of the second electrode plate.
In another embodiment of the present invention, each additional area further includes a connection section, and any two diagonally adjacent additional areas are connected to each other by the connection section.
In another embodiment of the invention, the absorbent member is shaped to correspond to the two adjacent additional zones and includes a region of connecting segments.
In another embodiment of the present invention, each additional region further includes a connection section, any two diagonally adjacent additional regions are connected to each other by the connection section, and the two additional regions connected to each other are not connected to other additional regions.
In another embodiment of the invention, the minimum spacing between two additional zones and the other additional zone connected to each other is between 0.01mm and 1mm.
In another embodiment of the invention, the absorbent member is shaped to correspond to the two adjacent additional zones and includes a region of connecting segments.
In another embodiment of the present invention, the exposed areas are arranged in a shape of a Chinese character 'tian' on the surface of the second electrode plate, so that the additional areas are rectangular.
In another embodiment of the present invention, the exposed areas further extend from the zigzag arrangement to the diagonal to be exposed, so that the additional areas are triangular.
In another embodiment of the present invention, the additional area and the exposed area correspond to the shape of the second electrode plate and are concentrically arranged on the surface of the second electrode plate.
In another embodiment of the present invention, the second electrode plate further has at least one gas delivery port and at least one gas extraction port disposed in the exposed area, the at least one gas extraction port is located at a position relatively far from the at least one gas delivery port, and the at least one gas delivery port inputs a heat dissipation gas into the exposed area, and the heat dissipation gas is extracted from the exposed area through the at least one gas extraction port.
In another embodiment of the present invention, the additional region is recessed in the surface of the second electrode plate, such that the exposed region is relatively protruded from the additional region, and such that the height of the additional region to which the adsorption member is attached is 0.01mm to 0.6mm higher than the exposed region.
In another embodiment of the present invention, the second electrode plate has a hollow plate structure, and a cooling channel through which a cooling fluid flows is formed inside the second electrode plate.
In another embodiment of the present invention, a limiting unit is further included, which is disposed on a side of the second electrode plate adjacent to the first electrode, and is configured to clamp the substrate to be processed between the limiting unit and the second electrode plate, wherein the limiting unit is a frame with a hollowed-out middle, and clamps and fixes an outer periphery of the substrate to be processed.
In another embodiment of the present invention, the material of the limiting unit is an insulating material.
Therefore, the substrate to be processed is adsorbed and positioned on the second electrode plate by the high adsorption force of the adsorption piece, and the position of the substrate to be processed is further limited by the limiting unit, so that the substrate to be processed is effectively prevented from warping in the plasma process.
Drawings
FIG. 1 is a schematic diagram of a carrier adsorption mechanism of a plasma processing system according to an embodiment of the present invention, which is used to illustrate that the present invention is disposed in a vacuum plasma processing chamber;
FIG. 2 is a schematic perspective view of a carrier adsorbing mechanism of a plasma processing system according to a first embodiment of the present invention;
FIG. 3A is a schematic perspective view of a carrier adsorbing mechanism of a plasma processing system according to a second embodiment of the present invention;
FIG. 3B is an enlarged view at A of FIG. 3A;
FIG. 4 is a perspective exploded view of a carrier adsorbing mechanism of a plasma processing system according to a second embodiment of the present invention;
FIG. 5A is a schematic diagram of a carrier adsorbing mechanism of a plasma processing system according to a second embodiment of the present invention;
FIG. 5B is an enlarged schematic view at A of FIG. 5A;
FIG. 6A is a cross-sectional view of a carrier adsorbing mechanism of a plasma processing system according to a second embodiment of the present invention;
FIG. 6B is an enlarged schematic view at A of FIG. 6A;
FIG. 7A is a schematic cross-sectional view of a carrier adsorbing mechanism of a plasma processing system according to a second embodiment of the invention, showing a second electrode plate having cooling channels;
FIG. 7B is an enlarged schematic view at A of FIG. 7A;
FIG. 8A is a schematic perspective view of a carrier adsorbing mechanism of a plasma processing system according to a third embodiment of the present invention;
FIG. 8B is an enlarged schematic view of FIG. 8A, FIG. 8B being a view showing the attachment area of the absorbent member including the area of the connecting section;
FIG. 9 is a schematic perspective view of a carrier adsorbing mechanism of a plasma processing system according to a fourth embodiment of the present invention;
FIG. 10 is a schematic perspective view of a carrier adsorbing mechanism of a plasma processing system according to a fifth embodiment of the present invention;
fig. 11 is a schematic perspective view showing a carrier adsorbing mechanism of a plasma processing system according to a sixth embodiment of the invention.
Description of the reference numerals
1: vacuum plasma processing chamber 100: carrier adsorption mechanism
200: the substrate 300 to be processed: first electrode
400: plasma process space 10: second electrode plate
11: additional zone 111: connecting section
112: removal zone 12: exposed area
121: transfer port 122: extraction opening
13: cooling channel 20: suction fitting
21: adsorption layer 22: and (5) sticking the layer.
Detailed Description
For the convenience of explanation of the central idea of the present invention represented in the above summary, the present invention is expressed in specific embodiments. The various elements of the embodiments are drawn to scale suitable for the description, and not to scale for the actual elements, as previously described.
Referring to fig. 1 to 11, a carrier adsorption mechanism 100 of a plasma processing system according to an embodiment of the invention is disclosed, which is disposed in a vacuum plasma processing chamber 1 and is used for performing a plasma process on a substrate 200 to be processed, a first electrode 300 is disposed in the vacuum plasma processing chamber 1, the carrier adsorption mechanism 100 is disposed at one side of the first electrode 300, and the carrier adsorption mechanism 100 comprises a second electrode plate 10 and at least one adsorption member 20. The substrate 200 to be processed may be a circuit composite carrier (e.g., PCB, FPC, etc.), a wafer or a chip, etc., and any object requiring plasma cleaning, etching, or plating process may be the substrate 200 to be processed according to the present invention.
The second electrode plate 10 is disposed corresponding to the first electrode 300 and is located at one side of the first electrode 300, a plasma processing space 400 is formed between the second electrode plate 10 and the first electrode 300, the substrate 200 to be processed is processed in the plasma processing space 400, and an additional area 11 and an exposed area 12 are disposed on the surface of the second electrode plate 10 adjacent to the plasma processing space 400. In the embodiment of the present invention, the additional area 11 and the exposed area 12 are plural, and the additional area 11 and the exposed area 12 are arranged on the surface of the second electrode plate 10 at intervals.
At least one adsorption member 20, which is disposed in the attachment area 11, wherein the adsorption member 20 adsorbs the substrate 200 to be processed so that the substrate 200 to be processed is fixed on the second electrode plate 10, and the substrate 200 to be processed will not be arbitrarily shifted and will not be warped during the plasma processing. The adsorption member 20 adsorbs the substrate 200 to be processed by electrostatic adsorption or silica gel adsorption, but is not limited thereto.
Further, the adsorbing member 20 includes an adsorbing layer 21 and an adhesive layer 22, wherein the adsorbing layer 21 is disposed on one side of the adsorbing member 20 close to the first electrode 300, and the adhesive layer 22 is disposed on the other side of the adsorbing member 20 far from the first electrode 300. The absorption member 20 is adhered to the additional region 11 through the adhesive layer 22; the adsorption layer 21 adsorbs the substrate 200 to be processed by electrostatic adsorption or adhesive adsorption, and the main purpose of the present invention is that the material capable of repeating the adsorption without using additional power is within the scope of the present invention. Further, for example, the electrostatic adsorption method may use an electrostatic film made of PVC, and a film body with a thickness of about 0.15mm is formed on a surface of a sheet; the adhesive adsorption mode mainly uses Polyurethane (PU), silica gel material or pressure-sensitive adhesive material (e.g. double-sided adhesive with different double-sided adhesive properties) to form a sheet-like repeatedly-adhered material. The foregoing is merely illustrative, and not limiting.
In addition, the carrier adsorbing mechanism 100 of the present invention further includes a limiting unit 30, where the limiting unit 30 is disposed on one side of the second electrode plate 10 adjacent to the first electrode 300, and the substrate 200 to be processed is sandwiched between the limiting unit 30 and the second electrode plate 10, so as to further prevent the substrate 200 to be processed from warping. As shown in fig. 1 and 4, the limiting unit 30 is in a frame shape with a hollow middle, and is pressed on one side edge of the substrate 200 to be processed by the second electrode plate 10, so as to further prevent the substrate 200 to be processed from being warped when being heated. Furthermore, the material of the limiting unit 30 is an insulating material, so that the limiting unit 30 will not deform due to the thermal factor in the plasma process when the substrate 200 is processed by the limiting unit 30, and the limiting unit 30 can further prevent the substrate 200 from warping under the condition of not affecting the process of the substrate 200.
Referring to fig. 2 and fig. 4, in this embodiment, the additional area 11, the exposed area 12 and the adsorbing member 20 are respectively provided in plurality, and the additional area 11 and the exposed area 12 are formed on the surface of the second electrode plate 10 in a spaced arrangement. Further, the additional area 11 and the exposed area 12 are elongated, and the additional area 11 and the exposed area 12 are arranged in a stripe shape on the surface of the second electrode plate 10.
As shown in fig. 3A to 7B, in a second embodiment of the present invention, the additional regions 11 and the exposed regions 12 are square, and the additional regions 11 and the exposed regions 12 are arranged in an array on the surface of the second electrode plate 10, wherein each additional region 11 includes a connection section 111, any two diagonally adjacent additional regions 11 are connected to each other by the connection section 111, and two additional regions 11 connected to each other are not connected to other additional regions 11.
As shown in fig. 5A, 5B, 6A, and 6B, in the second embodiment of the present invention, the additional region 11 is recessed in the surface of the second electrode plate 10, such that the exposed region 12 protrudes relatively beyond the additional region 11, and the absorbent member 20 has a height difference between the whole of the additional region 11 to which the absorbent member 20 is attached and the exposed region 12 after the absorbent member 20 is attached because the absorbent member 20 has a thickness relationship, wherein the height of the additional region 11 to which the absorbent member 20 is attached is higher than the height of the exposed region 12, and the height difference is between 0.01mm and 0.6mm; the two additional areas 11 connected to each other and the other additional areas 11 have a space D between 0.01mm and 1mm; the shape of the absorbent member 20 corresponds to the shape of the attachment zone 11, but in this embodiment, the absorbent member 20 is not formed on the connection section 111, so that the connection section 111 forms a recessed area, and a user can conveniently further remove and replace the absorbent member 20 through the connection section 111 of the recessed area.
As shown in fig. 5A, 5B, 6A, and 6B, in the second embodiment of the present invention, the second electrode plate 10 has at least one gas transmission port 121 and at least one gas extraction port 122 disposed in the exposed region 12, the position of the gas extraction port 122 is relatively far away from the position of the gas transmission port 121, the gas transmission port 121 is connected to a gas storage module (not shown), the gas transmission port 121 inputs a heat dissipation gas from the gas storage module to the exposed region 12, and the heat dissipation gas is extracted from the exposed region 12 by the gas extraction port 122, so that the heat energy generated by the plasma process is carried out of the exposed region 12 by the flow of the heat dissipation gas, thereby achieving the effect of enhancing the heat dissipation efficiency.
Wherein, the height difference is provided between the additional area 11 and the exposed area 12, and the two additional areas 11 and the other additional areas 11 connected with each other have a space D, so that the heat dissipation gas can flow between the exposed areas 12, and the heat energy generated by the plasma process is carried out of the exposed areas 12. In addition, in order to emphasize that the heat dissipation gas can flow in the exposed area 12, the substrate 200 to be processed and the distance between the exposed area 12 and the substrate 200 to be processed in fig. 6A are not drawn to scale, and in fact, the distance between the exposed area 12 and the substrate 200 to be processed is very small (may be only about 0.01mm to 0.6mm, and the above-mentioned dimensions are not limiting distance ranges, which are merely examples).
As shown in fig. 7A and 7B, in the second embodiment of the present invention, the second electrode plate 10 has a hollow plate structure, such that the second electrode plate 10 has a cooling channel 13 through which a cooling fluid is introduced, so that the cooling channel 13 can take away the heat energy on the second electrode plate 10 through the flow of the cooling fluid when the substrate 200 to be processed is subjected to the plasma process, thereby achieving the effect of enhancing the heat dissipation efficiency. Further, as shown in fig. 7, the cooling channel 13 can be serpentine to match the shapes of the additional area 11 and the exposed area 12, and is close to the surface of the exposed area 12, so as to further improve the heat dissipation efficiency.
As shown in fig. 8A and 8B, referring to fig. 4, the third embodiment of the present invention is different from the second embodiment in that the shape of the adsorbing member 20 corresponds to the shape of the additional area 11, and the attaching area of the adsorbing member 20 includes the area of the connecting section 111, so as to increase the placement or removal efficiency of the adsorbing member 20. In addition, in other embodiments of the present invention, the two additional areas 11 connected to each other can be connected to the other additional areas 11, so that the absorbing member 20 is connected to the surface of the second electrode plate 10 in an elongated shape, and the user only needs to pull up one end of the absorbing member 20 to remove the absorbing member 20 connected to the string, so that the absorbing member 20 can be adhered to the surface of the second electrode plate 10 or removed from the surface of the second electrode plate 10 more quickly.
As shown in fig. 9, referring to fig. 4, the fourth embodiment of the present invention is different from the third embodiment in that the exposed areas 12 are arranged in a shape of a letter-ji on the surface of the second electrode plate 10, so that the additional areas 11 are rectangular, wherein the additional areas 11 have a plurality of removing areas 112, and the removing areas 112 are formed by extending from four corners of each additional area 11, so that the user can quickly remove the absorbing member 20 from the surface of the second electrode plate 10.
As shown in fig. 10, and referring to fig. 4, the fifth embodiment of the present invention is different from the fourth embodiment in that the exposed areas 12 are arranged in a delta shape on the surface of the second electrode plate 10, and the exposed areas 12 further extend out of the delta shape from the delta shape to expose the additional areas 11.
As shown in fig. 11, referring to fig. 4, a sixth embodiment of the present invention is different from the fifth embodiment in that the additional region 11 and the exposed region 12 correspond to the shape of the second electrode plate 10 and are concentrically arranged on the surface of the second electrode plate 10.
Therefore, the invention has the following advantages:
1. the invention adsorbs and positions the substrate 200 to be processed on the second electrode plate 10 by the high adsorption force of the adsorption piece 20, thereby effectively preventing the substrate 200 to be processed from warping in the plasma process.
2. The limiting unit 30 is made of an insulating material, so that the limiting unit 30 cannot be deformed due to a thermal factor in a plasma process when the substrate 200 to be processed is processed, and the limiting unit 30 can further prevent the substrate 200 to be processed from warping under the condition that the processing condition of the substrate 200 to be processed is not affected.
3. The invention has the design of the gas transmission port 121 and the gas extraction port 122, so that the invention can achieve the effect of enhancing the heat radiation efficiency through the flow of heat radiation gas in the exposed area 12. The cooling passage 13 provided in the second electrode plate 10 can further improve the heat dissipation efficiency.
While the invention has been described in terms of a preferred embodiment, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the claims. The above examples are only for illustrating the present invention and are not intended to limit the scope of the present invention. All such modifications and changes as do not depart from the spirit of the invention are deemed to be within the scope of the invention as hereinafter claimed.
Claims (18)
1. A carrier adsorption mechanism of a plasma processing system, wherein the carrier adsorption mechanism is disposed in a vacuum plasma processing chamber for performing a plasma processing on a substrate to be processed, the vacuum plasma processing chamber having a first electrode disposed therein, the carrier adsorption mechanism comprising:
a second electrode plate corresponding to the first electrode, forming a plasma processing space between the second electrode plate and the first electrode, wherein an additional area and an exposed area are arranged on a surface of the second electrode plate adjacent to the plasma processing space; and
at least one adsorption piece arranged in the additional area and used for adsorbing the substrate to be processed so as to fix the substrate to be processed on the second electrode plate.
2. The carrier adsorbing mechanism as set forth in claim 1, wherein the additional region, the exposed region and the at least one adsorbing member are each plural and the additional region and the exposed regions are formed on the surface of the second electrode plate in a spaced arrangement.
3. The carrier adsorbing mechanism of claim 2, wherein the additional regions and the exposed regions are elongated and are arranged in stripes on the surface of the second electrode plate.
4. The carrier adsorbing mechanism of claim 2, wherein the additional regions and the exposed regions are square and are arranged in an array on the surface of the second electrode plate.
5. The carrier adsorbing mechanism of a plasma processing system as set forth in claim 4, wherein each additional zone further comprises a connecting section through which any two diagonally adjacent additional zones are connected to each other.
6. The carrier adsorbing mechanism of a plasma processing system as set forth in claim 5, wherein the adsorbing members have a shape corresponding to the two adjacent additional sections and include the area of the connecting section.
7. The carrier adsorbing mechanism of a plasma processing system as set forth in claim 4, wherein each of the additional zones further comprises a connecting section through which any two diagonally adjacent additional zones are connected to each other, the two additional zones connected to each other being unconnected to the other additional zones.
8. The carrier adsorbing mechanism of the plasma processing system as set forth in claim 7, wherein a minimum spacing between two additional zones connected to each other and the other additional zones is between 0.01mm and 1mm.
9. The carrier adsorbing mechanism of a plasma processing system as set forth in claim 7, wherein the adsorbing members have a shape corresponding to the two adjacent additional sections and include the area of the connecting section.
10. The carrier adsorbing mechanism of claim 2, wherein the exposed areas are arranged in a shape of a Chinese character 'tian' on the surface of the second electrode plate, such that the additional areas are rectangular.
11. The carrier adsorbing mechanism of the plasma processing system as set forth in claim 10, wherein the exposed areas further extend out of the diagonal from the zig-zag arrangement such that the additional areas are triangular.
12. The carrier adsorbing mechanism of claim 2, wherein the additional regions and the exposed regions correspond to the shape of the second electrode plate and are arranged concentrically with respect to the surface of the second electrode plate.
13. The carrier adsorbing mechanism as set forth in any one of claims 2 to 12, wherein the second electrode plate further has at least one gas inlet and at least one gas outlet disposed in the exposed region, the at least one gas outlet being located relatively far from the at least one gas inlet, the at least one gas inlet inputting a heat dissipating gas into the exposed region and withdrawing the heat dissipating gas from the exposed region through the at least one gas outlet.
14. The carrier adsorbing mechanism of the plasma processing system as set forth in claim 13, wherein the additional areas are recessed in the surface of the second electrode plate such that the exposed areas relatively protrude from the additional areas and such that the additional areas to which the adsorbing members are attached have a height 0.01mm to 0.6mm higher than the exposed areas.
15. The carrier adsorbing mechanism of any one of claims 2 to 12, wherein the additional regions are recessed in the surface of the second electrode plate such that the exposed regions relatively protrude from the additional regions and such that the height of the additional regions to which the adsorbing members are attached is 0.01mm to 0.6mm higher than the exposed regions.
16. The carrier adsorbing mechanism of claim 1 wherein the second electrode plate has a hollow plate structure with a cooling channel for cooling fluid.
17. The carrier adsorbing mechanism of claim 1 further comprising a limiting unit disposed on a side of the second electrode plate adjacent to the first electrode, wherein the substrate to be processed is sandwiched between the limiting unit and the second electrode plate, and the limiting unit has a hollow frame shape and clamps and fixes an outer periphery of the substrate to be processed.
18. The carrier adsorbing mechanism of claim 17, wherein the limiting unit is made of an insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210617795.5A CN117198965A (en) | 2022-06-01 | 2022-06-01 | Carrier adsorption mechanism of plasma processing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210617795.5A CN117198965A (en) | 2022-06-01 | 2022-06-01 | Carrier adsorption mechanism of plasma processing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117198965A true CN117198965A (en) | 2023-12-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210617795.5A Pending CN117198965A (en) | 2022-06-01 | 2022-06-01 | Carrier adsorption mechanism of plasma processing system |
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| Country | Link |
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| CN (1) | CN117198965A (en) |
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2022
- 2022-06-01 CN CN202210617795.5A patent/CN117198965A/en active Pending
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