TW202013580A - Wafer leveling chuck structure and method thereof by applying secondary wafer leveling to enhance flatness of processed portion - Google Patents
Wafer leveling chuck structure and method thereof by applying secondary wafer leveling to enhance flatness of processed portion Download PDFInfo
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Abstract
Description
本發明係關於一種晶圓加工前置整平裝置及其方法，特別關於晶圓翹曲問題進而促成後續加工失敗率提高，透過先整平晶圓大範圍翹曲，再對已被實行整平之晶圓執行二次整平，避免一次性整平導致晶圓內部的應力釋放破壞晶圓結構。 The present invention relates to a wafer processing pre-leveling device and method thereof, in particular to the problem of wafer warpage, which in turn contributes to an increase in the subsequent processing failure rate. By first leveling the wafer in a large-scale warpage, the flattening has been carried out The second leveling of the wafer is performed to avoid the one-time leveling leading to the release of stress inside the wafer and damaging the wafer structure.
半導體業在奈米級製程越走越遠，各類製程也需因應晶圓規格的變化，在基本面積變大上帶來各式挑戰；再，半導體製造業持續致力於更大的產能，並且逐漸增加晶圓上每單位面積中的電路，因此也縮減所製程之結構的最小特徵尺寸。 The semiconductor industry is going further and further in nano-level processes, and various processes must also respond to changes in wafer specifications, bringing various challenges in increasing the basic area; furthermore, the semiconductor manufacturing industry continues to strive for greater capacity, and Gradually increase the circuits per unit area on the wafer, thus also reducing the minimum feature size of the structure of the process.
其中，在晶圓之面積變大情況下，保持晶圓表面之平面度變得困難；又，因最小特徵尺寸變小導致晶圓加工工段種類更多，施於表面之應力殘留更趨於複雜，因此首要保持晶圓於加工時之平整。 Among them, when the area of the wafer becomes larger, it becomes difficult to maintain the flatness of the wafer surface; and because the minimum feature size becomes smaller, there are more types of wafer processing sections, and the residual stress applied to the surface tends to be more complicated Therefore, it is important to keep the wafers flat during processing.
以下例舉數篇先前技術文獻，多個相關專利如下：US 61/667,659揭示用於固持一晶圓或晶圓子堆疊之真空吸頭之使用，在某些實施方案中，由一真空吸頭以可幫助減少一晶圓或晶圓子堆疊之彎曲之一方式固持該晶圓或晶圓子堆疊。舉例而言，一種在一晶圓上形成特徵之方法包含將一晶圓放置於一真空吸頭上。面對真空吸頭之晶圓之一第一表面包含朝向真空吸頭突出之特徵，該真空吸頭包含其上安 置一非黏性、柔軟、彈性及非磨蝕性材料之一凹入表面以使得晶圓之特徵與真空吸頭之凹入表面上之材料接觸。晶圓之第一表面在其周邊附近之部分與包含一真空通道之真空吸頭之一***區段接觸。該方法包含產生一真空以將晶圓固持至真空吸頭且隨後使一複製工具與晶圓之一第二表面接觸以在晶圓之第二表面上形成經複製特徵。 Several prior art documents are cited below. Several related patents are as follows: US 61/667,659 discloses the use of a vacuum head for holding a wafer or a stack of wafers. In some embodiments, a vacuum head One way to help reduce the bending of a wafer or wafer sub-stack is to hold the wafer or wafer sub-stack. For example, a method of forming features on a wafer includes placing a wafer on a vacuum suction head. One of the first surfaces of the wafer facing the vacuum head includes features protruding toward the vacuum head, the vacuum head including a concave surface on which a non-sticky, soft, elastic and non-abrasive material is placed to make The characteristics of the wafer are in contact with the material on the concave surface of the vacuum head. A portion of the first surface of the wafer near its periphery is in contact with a raised section of a vacuum suction head including a vacuum channel. The method includes generating a vacuum to hold the wafer to the vacuum suction head and then contacting a replication tool with a second surface of the wafer to form replicated features on the second surface of the wafer.
TW I327351揭示有關將一基材固持於一晶圓吸盤的方法。該方法的特徵在於：朝該晶圓吸盤加速該基材的一部份以產生該基材朝向晶圓吸盤的移行速度，及在該基材達到晶圓吸盤之前減低該速度。以此方式，則該基材部份與晶圓吸盤的衝擊力會大為減少，此相信可以減低該基材之結構完整性和在該基材上的料層及/或該晶圓吸盤受損的可能性。 TW I327351 discloses a method for holding a substrate on a wafer chuck. The method is characterized by accelerating a portion of the substrate toward the wafer chuck to produce a migration speed of the substrate toward the wafer chuck, and reducing the speed before the substrate reaches the wafer chuck. In this way, the impact force of the substrate part and the wafer chuck will be greatly reduced, which is believed to reduce the structural integrity of the substrate and the material layer on the substrate and/or the wafer chuck. The possibility of loss.
TW I606545揭示一種真空夾具，包括：承載總成、密封單元、夾具連接頭及至少一個真空管。承載總成具有凹槽，凹槽內設有至少一個第一真空孔。密封單元包括密封圈，密封圈凸起形成真空槽，密封圈開設有至少一個第二真空孔，密封圈固定設置在承載總成的凹槽內，密封圈的第二真空孔與承載總成的第一真空孔相連通。夾具連接頭具有至少一個抽氣口及與抽氣口相連通的至少一個抽氣孔，夾具連接頭與承載總成固定連接。真空管將承載總成的第一真空孔與夾具連接頭的抽氣孔連通。本發明真空夾具藉由設置密封圈，使得真空夾具具有良好的氣密性，從而使晶圓能夠穩固夾持於真空夾具上。 TW I606545 discloses a vacuum clamp, including: a bearing assembly, a sealing unit, a clamp connector and at least one vacuum tube. The bearing assembly has a groove, and at least one first vacuum hole is provided in the groove. The sealing unit includes a sealing ring. The sealing ring protrudes to form a vacuum groove. The sealing ring is provided with at least one second vacuum hole. The sealing ring is fixedly disposed in the groove of the bearing assembly. The second vacuum hole of the sealing ring is connected to the bearing assembly. The first vacuum holes are in communication. The clamp connector has at least one suction port and at least one suction hole communicating with the suction port, and the clamp connector is fixedly connected to the bearing assembly. The vacuum tube communicates the first vacuum hole of the bearing assembly with the suction hole of the jig connector. The vacuum clamp of the present invention is provided with a sealing ring, so that the vacuum clamp has good airtightness, so that the wafer can be firmly clamped on the vacuum clamp.
然，現今因晶圓尺寸緣故導致翹曲嚴重的情況下，一次性的吸盤整平容易造成晶圓因應力殘留產生結構破壞，且未針對須加工區域加強。 However, in the case of severe warpage due to the wafer size, the one-time chuck flattening is likely to cause structural damage to the wafer due to residual stress, and is not strengthened for the area to be processed.
因此，為解決以上問題，本發明之主要目的係在提供一種晶圓整平吸盤結構及其方法，以改善上述之問題。 Therefore, in order to solve the above problems, the main object of the present invention is to provide a wafer leveling chuck structure and a method thereof to improve the above problems.
有鑑於以上問題，本發明係提供一種晶圓整平吸盤結構及其方法，由至少一吸盤模組先行吸附晶圓達成大面積的晶圓整平效果，再針對晶圓須加工部份或晶圓須加工部份外區域來實行二次晶圓整平。 In view of the above problems, the present invention provides a wafer leveling chuck structure and method thereof. At least one chuck module first adsorbs the wafer to achieve a large area wafer leveling effect, and then the wafer must be processed part or crystal The outer part of the circle must be processed to implement secondary wafer leveling.
因此，本發明之主要目的係在提供一種晶圓整平吸盤結構及其方法，經由後續吸嘴模組針對晶圓須加工部份區域來實行二次晶圓整平，以增加加工部分平整度。 Therefore, the main object of the present invention is to provide a wafer leveling chuck structure and a method thereof, to implement secondary wafer leveling for a part of the wafer to be processed through the subsequent nozzle module to increase the flatness of the processed part .
本發明再一目的係在提供一種晶圓整平吸盤結構及其方法，藉由多孔陶瓷模組分別針對晶圓須加工部份外區域來實行二次晶圓整平，以增加晶圓整體平整度。 Still another object of the present invention is to provide a wafer leveling chuck structure and method thereof, by using a porous ceramic module to perform secondary wafer leveling separately on the outer area of the wafer to be processed to increase the overall wafer leveling degree.
本發明再一目的係在提供一種晶圓整平吸盤結構及其方法，利用增設一工作環於加工缺口，可增加晶圓加工時之平面度。 Still another object of the present invention is to provide a wafer leveling chuck structure and method thereof. By adding a working ring to the processing gap, the flatness of the wafer during processing can be increased.
本發明再一目的係在提供一種晶圓整平吸盤結構及其方法，為達成上述目的，本發明所使用的主要技術手段是採用以下技術方案來實現的。本發明為一種晶圓整平吸盤結構，用於整平一晶圓之翹曲，其包含一承載模組、至少一吸盤模組及複數吸嘴模組；該承載模組包含一工作平台、至少一吸盤裝設孔及一加工缺口，該加工缺口邊緣具備複數吸嘴設置孔，該吸盤裝設孔設於該工作平台內，該加工缺口設於該工作平台一角；該吸盤模組包含一白努力吸盤及一進氣孔，該白努力吸盤設置於該吸盤裝設孔中，該白努力吸盤透過該進氣孔之進氣產生白努力現 象；該吸嘴模組包含一吸嘴單元及一吸嘴吸氣孔，該吸嘴單元設置於該吸嘴設置孔中，該吸嘴單元透過該吸嘴吸氣孔之吸氣產生模擬真空；其特徵在於，當該晶圓放置於該工作平台上，由該白努力吸盤針對該晶圓之大範圍翹曲整平，接著該加工缺口附近之小範圍翹曲整平由該些吸嘴單元吸附該晶圓實行。 Still another object of the present invention is to provide a wafer leveling chuck structure and method. To achieve the above objective, the main technical means used in the present invention are implemented by the following technical solutions. The invention is a wafer leveling chuck structure for leveling the warpage of a wafer, which includes a carrier module, at least one chuck module and a plurality of nozzle modules; the carrier module includes a working platform, at least A suction cup installation hole and a processing gap, the edge of the processing gap is provided with a plurality of suction nozzle installation holes, the suction cup installation hole is provided in the working platform, the processing gap is provided at a corner of the working platform; the suction cup module includes a white A diligent suction cup and an air intake hole, the white diligent suction cup is arranged in the suction cup mounting hole, the white diligent suction cup generates white diligence phenomenon through the air intake of the air intake hole; the nozzle module includes a nozzle unit and a A suction nozzle suction hole, the suction nozzle unit is disposed in the suction nozzle installation hole, the suction nozzle unit generates a simulated vacuum through the suction of the suction nozzle suction hole; characterized in that when the wafer is placed on the working platform In the above, the white-effort chuck is used to level the large-scale warpage of the wafer, and then the small-scale warp-leveling near the processing gap is performed by the suction nozzle units adsorbing the wafer.
為達成上述目的，本發明所使用的次要技術手段是採用以下技術方案來實現的。本發明為一種晶圓整平吸盤結構，用於整平一晶圓之翹曲，其包含一承載模組、至少一吸盤模組及一多孔陶瓷模組；該承載模組包含、一工作平台、至少一吸盤裝設孔、一加工缺口及至少一多孔陶瓷裝設孔，該多孔陶瓷裝設孔設於該工作平台內，該多孔陶瓷裝設孔包圍該吸盤裝設孔，該加工缺口設於該工作平台一角；該吸盤模組包含一白努力吸盤及一進氣孔，該白努力吸盤設置於該吸盤裝設孔中，該白努力吸盤透過該進氣孔之進氣產生白努力現象；該多孔陶瓷模組包含一多孔陶瓷單元及一多孔陶瓷吸氣孔，該多孔陶瓷單元設置於該多孔陶瓷設置孔中，該多孔陶瓷單元透過該多孔陶瓷吸氣孔之吸氣產生模擬真空；其特徵在於，當該晶圓放置於該工作平台上，由該白努力吸盤針對該晶圓之大範圍翹曲整平，接著該加工缺口外之小範圍翹曲整平由該多孔陶瓷單元吸附該晶圓實行。 In order to achieve the above objective, the secondary technical means used in the present invention are implemented by the following technical solutions. The invention is a wafer leveling chuck structure for leveling the warpage of a wafer, which includes a carrier module, at least one chuck module and a porous ceramic module; the carrier module includes, a working platform , At least one suction cup installation hole, a processing gap and at least one porous ceramic installation hole, the porous ceramic installation hole is provided in the working platform, the porous ceramic installation hole surrounds the suction cup installation hole, the processing gap Located at a corner of the working platform; the suction cup module includes a white effort suction cup and an air inlet hole, the white effort suction cup is disposed in the suction cup installation hole, and the white effort suction cup generates white effort through the air intake of the air inlet hole Phenomenon; the porous ceramic module includes a porous ceramic unit and a porous ceramic suction hole, the porous ceramic unit is disposed in the porous ceramic installation hole, the porous ceramic unit is generated by the suction of the porous ceramic suction hole Simulated vacuum; characterized in that, when the wafer is placed on the working platform, the white effort chuck is used to flatten the large-scale warpage of the wafer, and then the small-scale warpage outside the processing gap is flattened by the porous The ceramic unit adsorbs the wafer.
本發明的目的及解決其技術問題還可採用以下技術措施步驟進一步實現。 The purpose of the present invention and the solution of its technical problems can be further achieved by the following technical measures.
前述的結構，該承載模組包含一工作環，該工作環設置於該加工缺口另一側。 In the aforementioned structure, the bearing module includes a working ring, which is disposed on the other side of the processing gap.
另，為達成上述目地，本發明所使用的再一主要技術手段是採用以下技術方案來實現的。本發明為一種晶圓整平吸盤方式，用於整平一晶圓之翹曲，其步驟如下：步驟A：首先，將一晶圓放置於一工作平台上；步驟B：由該工作平台內之至少一白努力吸盤針對該晶圓大範圍翹曲整平：步驟C：由設於該工作平台之複數吸嘴單元將該晶圓接近該工作平台一加工缺口之範圍翹曲整平。 In addition, in order to achieve the above purpose, still another main technical means used in the present invention is implemented by the following technical solutions. The present invention is a wafer leveling chuck method for leveling the warpage of a wafer. The steps are as follows: Step A: First, place a wafer on a working platform; Step B: from the working platform At least one white effort chuck flattens and flattens the wafer in a wide range: Step C: the plurality of nozzle units provided on the working platform warps and flattens the wafer close to a processing gap of the working platform.
又，為達成上述目地，本發明所使用的再一次要技術手段是採用以下技術方案來實現的。本發明為一種晶圓整平吸盤方式，用於整平一晶圓之翹曲，其步驟如下：步驟A：首先，將一晶圓放置於一工作平台上；步驟B：由該工作平台內之至少一白努力吸盤針對該晶圓大範圍翹曲整平：步驟C1：由設於該工作平台之一多孔陶瓷單元將該晶圓除了該工作平台之一加工缺口外之範圍翹曲整平。 In addition, in order to achieve the above object, the technical means used in the present invention is implemented by the following technical solutions. The present invention is a wafer leveling chuck method for leveling the warpage of a wafer. The steps are as follows: Step A: First, place a wafer on a working platform; Step B: from the working platform At least one white endeavor chuck flattens the wafer in a wide range of warpage: Step C1: a porous ceramic unit provided on the working platform flattens the wafer in addition to the processing gap of one of the working platforms .
本發明的目的及解決其技術問題還可採用以下技術措施步驟進一步實現。 The purpose of the present invention and the solution of its technical problems can be further achieved by the following technical measures.
前述的方法，其中步驟B之後，由一整平治具從該晶圓上方壓下。 In the aforementioned method, after step B, a leveling jig is pressed down from above the wafer.
前述的方法，其中步驟B之後，由設置於該加工缺口另一側之該承載模組之一工作環輔助保持該晶圓之外圍平整。 In the foregoing method, after step B, a working ring of the carrier module disposed on the other side of the processing gap assists to keep the periphery of the wafer flat.
相較於習知技術，本發明具有功效在於：(1)改變晶圓整平方法，減少現有晶圓之加工區整平效果差之缺點；(2)由吸盤針對晶圓大面積整平，再實施二次整平避免多孔陶瓷吸附不易的問題；(3)分成二次整平晶圓降低應力破壞結構；(4)藉由工作環協助，使晶圓之加工區整平 之功效提昇。 Compared with the conventional technology, the present invention has the functions of: (1) changing the wafer leveling method to reduce the disadvantage of the poor leveling effect of the existing wafer processing area; (2) the large area of the wafer is flattened by the suction cup, Then implement secondary leveling to avoid the difficulty of porous ceramic adsorption; (3) Divide into secondary leveling wafers to reduce the stress damage structure; (4) With the help of the working ring, the efficiency of the wafer processing area leveling is improved.
1‧‧‧晶圓 1‧‧‧ Wafer
10‧‧‧承載模組 10‧‧‧ bearing module
11‧‧‧工作平台 11‧‧‧Working platform
12‧‧‧吸盤裝設孔 12‧‧‧Sucker mounting hole
13‧‧‧加工缺口 13‧‧‧Processing gap
14‧‧‧多孔陶瓷設置孔 14‧‧‧Porous ceramic set hole
15‧‧‧工作環 15‧‧‧Working ring
20‧‧‧吸盤模組 20‧‧‧Sucker module
21‧‧‧白努力吸盤 21‧‧‧White effort sucker
22‧‧‧進氣孔 22‧‧‧Air inlet
30‧‧‧吸嘴模組 30‧‧‧Nozzle module
31‧‧‧吸嘴單元 31‧‧‧Nozzle unit
32‧‧‧吸嘴吸氣孔 32‧‧‧Suction nozzle suction hole
40‧‧‧多孔陶瓷模組 40‧‧‧Porous ceramic module
41‧‧‧多孔陶瓷單元 41‧‧‧Porous ceramic unit
42‧‧‧多孔陶瓷吸氣孔 42‧‧‧porous ceramic suction hole
51‧‧‧步驟A 51‧‧‧Step A
52‧‧‧步驟B 52‧‧‧Step B
521‧‧‧步驟B1 521‧‧‧Step B1
522‧‧‧步驟B2 522‧‧‧Step B2
53‧‧‧步驟C 53‧‧‧Step C
531‧‧‧步驟C1 531‧‧‧Step C1
第1a圖：為本發明第一實施型態之第一流程圖。 Figure 1a: a first flowchart of the first embodiment of the present invention.
第1b圖：為本發明第一實施型態之第二流程圖。 Figure 1b: a second flowchart of the first embodiment of the present invention.
第2a圖：為本發明第二實施型態之第一流程圖。 Figure 2a: a first flowchart of a second embodiment of the present invention.
第2b圖：為本發明第二實施型態之第二流程圖。 Figure 2b: a second flowchart of the second embodiment of the present invention.
第3a圖：為本發明第一實施型態之吸盤結構示意圖。 Figure 3a: a schematic view of the structure of the suction cup of the first embodiment of the present invention.
第3b圖：為本發明第一實施型態之吸盤結構與晶圓示意圖。 Fig. 3b is a schematic diagram of the chuck structure and wafer of the first embodiment of the present invention.
第4圖：為本發明第一實施型態之吸盤結構之***圖。 Figure 4: Exploded view of the suction cup structure of the first embodiment of the present invention.
第5圖：為本發明第一實施型態之吸盤結構之側視圖。 Fig. 5 is a side view of the suction cup structure of the first embodiment of the present invention.
第6a圖：為本發明第一實施型態之吸盤結構與工作環之示意圖。 Fig. 6a: a schematic diagram of the suction cup structure and working ring of the first embodiment of the present invention.
第6b圖：為本發明第一實施型態之工作環與晶圓示意圖。 FIG. 6b is a schematic diagram of the working ring and wafer of the first embodiment of the present invention.
第7a圖：為本發明第一實施型態之第一示意圖。 Fig. 7a: A first schematic diagram of the first embodiment of the present invention.
第7b圖：為本發明第一實施型態之第二示意圖。 Figure 7b: a second schematic diagram of the first embodiment of the present invention.
第7c圖：為本發明第一實施型態之第三示意圖。 Figure 7c: A third schematic diagram of the first embodiment of the present invention.
第8a圖：為本發明第二實施型態之吸盤結構示意圖。 Figure 8a: A schematic view of the structure of the suction cup of the second embodiment of the present invention.
第8b圖：為本發明第二實施型態之吸盤結構與晶圓示意圖。 Fig. 8b is a schematic diagram of the chuck structure and wafer of the second embodiment of the present invention.
第9圖：為本發明第二實施型態之吸盤結構之***圖。 Figure 9: An exploded view of the suction cup structure of the second embodiment of the present invention.
第10a圖：為本發明第二實施型態之吸盤結構與工作環之示意圖。 Fig. 10a is a schematic diagram of the suction cup structure and working ring of the second embodiment of the present invention.
第10b圖：為本發明第二實施型態之工作環與晶圓示意圖。 Fig. 10b is a schematic diagram of a working ring and a wafer in a second embodiment of the present invention.
第11a圖：為本發明第二實施型態之第一示意圖。 Fig. 11a: A first schematic diagram of the second embodiment of the present invention.
第11b圖：為本發明第二實施型態之第二示意圖。 Fig. 11b: A second schematic diagram of the second embodiment of the present invention.
第11c圖：為本發明第二實施型態之第三示意圖。 Figure 11c: A third schematic diagram of the second embodiment of the present invention.
為了讓本發明之目的、特徵與功效更明顯易懂，以下特別列舉本發明之第一實施型態：首先，請參閱第3a圖，可見本發明之第一實施型態由一承載模組(10)、二吸盤模組(20)及複數吸嘴模組(30)所構成。 In order to make the purpose, features and functions of the present invention more obvious and understandable, the first embodiment of the present invention is specifically enumerated below: First, please refer to FIG. 3a, it can be seen that the first embodiment of the present invention consists of a carrier module ( 10), composed of two suction cup modules (20) and a plurality of suction nozzle modules (30).
其中，再見第4圖，該承載模組(10)包含一工作平台(11)、至少一吸盤裝設孔(12)及一加工缺口(13)，該加工缺口(13)邊緣具備複數吸嘴設置孔(131)，該吸盤裝設孔(12)設於該工作平台(11)內，該加工缺口(13)設於該工作平台(11)一角。 Wherein, see Fig. 4 again, the carrier module (10) includes a working platform (11), at least one suction cup mounting hole (12) and a processing gap (13), the processing gap (13) is provided with a plurality of suction nozzles A hole (131) is provided, the suction cup mounting hole (12) is provided in the working platform (11), and the processing gap (13) is provided at a corner of the working platform (11).
具體而言，該工作平台(11)功效為承載須加工之晶圓，其一般具備旋轉位移的功能，並設於精密XY工作台上以配合加工做出平面位移；另，該吸盤裝設孔(12)功效為裝設該吸盤模組(20)之貫穿工作平台(11)之孔洞；又，該加工缺口(13)功效為提供晶圓放置於該工作平台(11)時，由下方施於雷射加工之缺口；其，該吸嘴設置孔(131)功效為裝設該吸嘴模組(30)之貫穿工作平台(11)之孔洞。 Specifically, the function of the working platform (11) is to carry the wafer to be processed, which generally has the function of rotational displacement, and is set on a precision XY table to cooperate with the processing to make a plane displacement; in addition, the suction cup is provided with a hole (12) The function is to install the suction cup module (20) through the hole of the working platform (11); and the processing notch (13) function is to provide wafers placed on the working platform (11) from below In the gap of laser processing; the nozzle setting hole (131) functions as a hole penetrating the working platform (11) of the nozzle module (30).
其中，由第4圖可見，該吸盤模組(20)包含一白努力吸盤(21)及一進氣孔(22)，該白努力吸盤(21)設置於該吸盤裝設孔(12)中，該白努力吸盤(21)透過該進氣孔(22)之進氣產生白努力現象。 It can be seen from FIG. 4 that the suction cup module (20) includes a white effort suction cup (21) and an air intake hole (22), and the white effort suction cup (21) is disposed in the suction cup installation hole (12) The white effort sucker (21) sucks air through the air inlet (22) to produce white effort.
實際來說，該吸盤模組(20)功效為提供晶圓整平，其中該白努力吸盤(21)是由進氣孔(22)供給端供應的氣體會從該白努力吸盤 (21)的內部圓筒狀側面的噴口高速噴出，並在該白努力吸盤(21)內部的筒狀空間內形成旋轉氣流，並形成負壓(旋風效應)，氣流在該白努力吸盤(21)和晶圓(1)之間的空間中形成穩定的層流，並造成晶圓上下表面之間的壓力差，最終形成對晶圓的吸附力；而，實務上該白努力吸盤(21)和晶圓(1)之間非直接接觸。 In fact, the function of the chuck module (20) is to provide wafer leveling, wherein the white effort chuck (21) is supplied by the supply end of the air inlet (22) from the white effort chuck (21) The nozzle on the inner cylindrical side is ejected at a high speed, and a swirling airflow is formed in the cylindrical space inside the white effort chuck (21), and a negative pressure (whirlwind effect) is formed. The airflow is generated in the white effort chuck (21) and the wafer (1) A stable laminar flow is formed in the space between them, and the pressure difference between the upper and lower surfaces of the wafer is finally formed, which eventually forms the adsorption force of the wafer; in practice, the white hard suction cup (21) and the wafer ( 1) Indirect contact.
其中，從第4圖所示，該吸嘴模組(30)包含一吸嘴單元(31)及一吸嘴吸氣孔(32)，該吸嘴單元(31)設置於該吸嘴設置孔(131)中，該吸嘴單元(31)透過該吸嘴吸氣孔(32)之吸氣產生模擬真空。 Wherein, as shown in Figure 4, the nozzle module (30) includes a nozzle unit (31) and a nozzle suction hole (32), the nozzle unit (31) is disposed in the nozzle installation hole In (131), the suction of the suction nozzle unit (31) through the suction hole of the suction nozzle (32) generates a simulated vacuum.
大體情況，該吸嘴模組(30)功效為吸附整平晶圓之用，該吸嘴單元(31)採用了真空原理，即用真空負壓來吸附工件以達到夾持工件的目的，當真空幫浦啟動後，經吸嘴吸氣孔(32)通氣，由吸嘴單元(31)內部的空氣被抽走，形成了真空狀態；此時，吸嘴單元(31)內部的空氣壓力低於吸嘴單元(31)外部的大氣壓力，工件在外部壓力的作用下被吸起，此時吸盤內部的真空度越高，吸盤與工件之間貼的越緊；實務上因該些吸嘴模組(30)共用一真空幫浦，如其一吸嘴模組(30)與工件未達成負壓環境(距離過大)，其餘吸嘴模組(30)將一併無法達成吸附功效。 In general, the function of the nozzle module (30) is to absorb and flatten the wafer. The nozzle unit (31) uses the vacuum principle, that is, the vacuum negative pressure is used to adsorb the workpiece to achieve the purpose of clamping the workpiece. After the vacuum pump is started, the air is sucked through the nozzle suction hole (32), and the air inside the nozzle unit (31) is pumped away to form a vacuum state; at this time, the air pressure inside the nozzle unit (31) is low Due to the atmospheric pressure outside the suction nozzle unit (31), the workpiece is sucked up by the external pressure. At this time, the higher the vacuum inside the suction cup, the tighter the suction cup is attached to the workpiece; in practice, these suction nozzles The module (30) shares a vacuum pump. If one of the nozzle module (30) and the workpiece have not reached a negative pressure environment (the distance is too large), the remaining nozzle modules (30) will not be able to achieve the adsorption effect.
較佳者，如第6a圖所示，該承載模組(10)包含一工作環(15)，該工作環(15)設置於該加工缺口(13)另一側；工作環(15)係為消除晶圓(1)加工部份之外圍缺乏支撐導致的翹曲(見第6b圖)。 Preferably, as shown in FIG. 6a, the bearing module (10) includes a working ring (15), the working ring (15) is disposed on the other side of the processing gap (13); the working ring (15) is To eliminate the warpage caused by the lack of support on the periphery of the processed part of the wafer (1) (see Figure 6b).
又，請參考第1a圖所示之流程圖，其由步驟A(51)、步驟B(52)、步驟C(53)所構成。 Also, please refer to the flowchart shown in FIG. 1a, which is composed of step A (51), step B (52), and step C (53).
其中，見第1a及3b圖所示，該步驟A(51)係為將一晶圓(1) 放置於一工作平台(11)上。 Among them, as shown in FIGS. 1a and 3b, the step A (51) is to place a wafer (1) on a working platform (11).
此步驟A(51)係為整平晶圓(1)做準備。 This step A (51) is to prepare for leveling the wafer (1).
再，見第1a、3a及3b圖所示，該步驟B(52)係為由該工作平台(11)內之至少一白努力吸盤(21)針對該晶圓(1)大範圍翹曲整平。 Furthermore, as shown in Figs. 1a, 3a and 3b, the step B (52) is a large-scale warping of the wafer (1) by at least one white effort chuck (21) in the working platform (11) level.
此步驟B(52)係由白努力吸盤(21)以進氣孔(22)供給端供應的氣體形成負壓，氣流在該白努力吸盤(21)和晶圓(1)之間的空間中形成穩定的層流，並造成晶圓上下表面之間的壓力差，最終形成對晶圓的吸附力，藉此整平翹曲之該晶圓(1)。 In this step B (52), the gas supplied by the white end suction cup (21) at the supply end of the air inlet (22) forms a negative pressure, and the air flow is in the space between the white end suction cup (21) and the wafer (1) A stable laminar flow is formed, and the pressure difference between the upper and lower surfaces of the wafer is formed, and finally an adsorption force for the wafer is formed, thereby smoothing the warped wafer (1).
最後，見第1a圖所示，該步驟C(53)係為由設於該工作平台(11)之複數吸嘴單元(31)將該晶圓(1)接近該工作平台(11)之一加工缺口(13)之範圍翹曲整平。 Finally, as shown in FIG. 1a, the step C(53) is that the plurality of nozzle units (31) provided on the working platform (11) approach the wafer (1) to one of the working platform (11) The range of the processing gap (13) is warped and leveled.
此步驟C(53)係真空幫浦啟動後，經吸嘴吸氣孔(32)通氣，由吸嘴單元(31)內部的空氣被抽走，形成了真空狀態，該晶圓(1)在外部壓力的作用下被吸起，藉此整平翹曲之該晶圓(1)。 This step C (53) is that after the vacuum pump is started, the air is ventilated through the suction hole (32) of the nozzle, and the air inside the nozzle unit (31) is drawn away to form a vacuum state. The wafer (1) is It is sucked up under the action of external pressure, thereby leveling the warped wafer (1).
較佳著，可於第1a圖步驟B(52)與步驟C(53)間增加步驟B1(521)及步驟B2(522)，請再參考第1b圖之步驟B1(521)及步驟B2(522)表示；步驟B1(521)詳細描述如下，步驟B(52)之後，由一整平治具從該晶圓(1)上方壓下；步驟B2(522)詳細描述如下，步驟B(52)之後，由設置於該加工缺口(13)另一側之該承載模組(10)之一工作環(15)輔助保持該晶圓(1)之外圍平整。 Preferably, step B1 (521) and step B2 (522) can be added between step B (52) and step C (53) in FIG. 1a. Please refer to step B1 (521) and step B2 in FIG. 1b again. 522); Step B1 (521) is described in detail as follows. After Step B (52), a leveling jig is pressed from above the wafer (1); Step B2 (522) is described in detail as follows, Step B (52) After that, a working ring (15) of the carrier module (10) provided on the other side of the processing gap (13) assists in keeping the periphery of the wafer (1) flat.
在此步驟B1(521)主要目的為增加晶圓(1)另一面之整平治具來提升整平效果；而，該步驟B2(522)係為消除晶圓(1)加工部 份之外圍缺乏支撐導致的翹曲。 The main purpose of this step B1 (521) is to increase the leveling jig on the other side of the wafer (1) to improve the leveling effect; however, this step B2 (522) is to eliminate the lack of peripheral parts of the wafer (1) processing part Warpage caused by bracing.
以下就以本發明一種晶圓整平吸盤結構及其方法之第一實施型態為例，針對本發明的實施過程做一詳細的說明如下所示。 The following takes the first embodiment of a wafer leveling chuck structure and method of the present invention as an example, and a detailed description of the implementation process of the present invention is as follows.
首先，請參閱第5圖呈現，該承載模組(10)之該工作平台(11)上設有該吸盤模組(20)之該些白努力吸盤(21)、該吸嘴模組(30)之該些吸嘴單元(31)。 First of all, please refer to the presentation of FIG. 5, the white effort suckers (21) and the suction nozzle modules (30) of the suction module (20) provided on the working platform (11) of the carrier module (10) ) Of these nozzle units (31).
再，如3b或6b圖所示，將晶圓(1)置於該工作平台(11)上；此時，見第7a圖，可見白努力吸盤(21)與吸嘴單元(31)未與晶圓(1)實際接觸，而吸嘴單元(31)與晶圓(1)距離分別為W與X。 Furthermore, as shown in Figure 3b or 6b, place the wafer (1) on the working platform (11); at this time, see Figure 7a, it can be seen that the white effort sucker (21) and the nozzle unit (31) are not The wafer (1) is actually in contact, and the distance between the nozzle unit (31) and the wafer (1) is W and X, respectively.
接著，如7b圖所示，由該工作平台(11)內之至少一白努力吸盤(21)針對該晶圓(1)大範圍翹曲整平；此時，見第7b圖，可見白努力吸盤(21)與吸嘴單元(31)未與晶圓(1)實際接觸，而吸嘴單元(31)與晶圓(1)距離分別為W`與X`。 Next, as shown in FIG. 7b, at least one white effort chuck (21) in the working platform (11) is flattened to a large extent for the wafer (1); at this time, see FIG. 7b, it can be seen that the white effort The chuck (21) and the nozzle unit (31) are not in actual contact with the wafer (1), and the distance between the nozzle unit (31) and the wafer (1) is W` and X`, respectively.
最後，見第7c圖所示，由設於該工作平台(11)之複數吸嘴單元(31)將該晶圓(1)接近該工作平台(11)之一加工缺口(13)之範圍翹曲整平；此時，見第7c圖，可見白努力吸盤(21)與吸嘴單元(31)與晶圓(1)實際接觸。 Finally, as shown in FIG. 7c, the plurality of nozzle units (31) provided on the working platform (11) lift the wafer (1) close to the processing notch (13) of the working platform (11). Curved and leveled; at this time, see Figure 7c, it can be seen that the white effort sucker (21) and the nozzle unit (31) are actually in contact with the wafer (1).
如第2a、2b、8a、8b、9、10a、10b、11a、11b及11c圖所示，為本發明一種晶圓整平吸盤結構及其方法之第二實施型態；在第一實施型態與第1a、1b、3a、3b、4、5、6a、6b、7a、7b及7c圖中已說明的特徵與第2a、2b、8a、8b、9、10a、10b、11a、11b及11c圖相同者，於第2a、2b、8a、8b、9、10a、10b、11a、11b及11c圖的符號標示或省略不再贅述。第二實施 型態與第一實施型態的主要差異在於由第二實施型態之該多孔陶瓷模組(40)替換第一實施型態之該吸嘴模組(30)。 As shown in Figures 2a, 2b, 8a, 8b, 9, 10a, 10b, 11a, 11b and 11c, it is the second embodiment of a wafer leveling chuck structure and method of the invention; in the first embodiment States and the features described in the figures 1a, 1b, 3a, 3b, 4, 5, 6a, 6b, 7a, 7b and 7c and the features of 2a, 2b, 8a, 8b, 9, 10a, 10b, 11a, 11b and Those with the same figure 11c are marked or omitted in figures 2a, 2b, 8a, 8b, 9, 10a, 10b, 11a, 11b, and 11c. The main difference between the second embodiment and the first embodiment is that the porous ceramic module (40) of the second embodiment replaces the nozzle module (30) of the first embodiment.
首先，請參閱第3a圖，可見本發明之第二實施型態由一承載模組(10)、二吸盤模組(20)及一多孔陶瓷模組(40)所構成。 First, referring to FIG. 3a, it can be seen that the second embodiment of the present invention is composed of a carrier module (10), two suction cup modules (20), and a porous ceramic module (40).
其中，再見第9圖，該承載模組(10)包含、一工作平台(11)、至少一吸盤裝設孔(12)、一加工缺口(13)及至少一多孔陶瓷裝設孔(14)，該多孔陶瓷裝設孔(14)設於該工作平台(11)內，該多孔陶瓷裝設孔(14)包圍該吸盤裝設孔(12)，該加工缺口(13)設於該工作平台(11)一角。 Wherein, see Fig. 9 again, the carrier module (10) includes a working platform (11), at least one suction cup installation hole (12), a processing gap (13) and at least one porous ceramic installation hole (14) ), the porous ceramic installation hole (14) is provided in the working platform (11), the porous ceramic installation hole (14) surrounds the suction cup installation hole (12), and the processing notch (13) is provided in the work The corner of the platform (11).
具體而言，該多孔陶瓷裝設孔(14)功效為裝設該多孔陶瓷模組(40)之貫穿工作平台(11)之孔洞。 Specifically, the function of the porous ceramic installation hole (14) is to install a hole of the porous ceramic module (40) penetrating the working platform (11).
其中，由第9圖可見，該吸盤模組(20)包含一白努力吸盤(21)及一進氣孔(22)，該白努力吸盤(21)設置於該吸盤裝設孔(12)中，該白努力吸盤(21)透過該進氣孔(22)之進氣產生白努力現象。 It can be seen from Figure 9 that the sucker module (20) includes a white effort sucker (21) and an air intake hole (22), and the white effort sucker (21) is disposed in the sucker mounting hole (12) The white effort sucker (21) sucks air through the air inlet (22) to produce white effort.
其中，從第9圖所示，該多孔陶瓷模組(40)包含一多孔陶瓷單元(41)及一多孔陶瓷吸氣孔(42)，該多孔陶瓷單元(41)設置於該多孔陶瓷設置孔(14)中，該多孔陶瓷單元(41)透過該多孔陶瓷吸氣孔(42)之吸氣產生模擬真空。 Wherein, as shown in FIG. 9, the porous ceramic module (40) includes a porous ceramic unit (41) and a porous ceramic suction hole (42), the porous ceramic unit (41) is disposed on the porous ceramic In the setting hole (14), the porous ceramic unit (41) sucks through the porous ceramic suction hole (42) to generate a simulated vacuum.
大體情況，該多孔陶瓷模組(40)功效為吸附整平晶圓之用，其中該多孔陶瓷單元(41)是由多孔陶瓷吸氣孔(42)供給，即用真空負壓來吸附工件以達到夾持工件的目的；該多孔陶瓷單元(41)的氣孔為均勻排列，具有高性能，高精密的均勻吸附力。 In general, the function of the porous ceramic module (40) is to adsorb and flatten the wafer, wherein the porous ceramic unit (41) is supplied by the porous ceramic suction hole (42), that is, the vacuum negative pressure is used to adsorb the workpiece to To achieve the purpose of clamping the workpiece; the pores of the porous ceramic unit (41) are evenly arranged, with high performance, high precision and uniform adsorption force.
較佳者，如第10a圖所示，該承載模組(10)包含一工作環 (15)，該工作環(15)設置於該加工缺口(13)另一側；工作環(15)係為消除晶圓(1)加工部份之外圍缺乏支撐導致的翹曲(見第10b圖)。 Preferably, as shown in FIG. 10a, the bearing module (10) includes a working ring (15), the working ring (15) is disposed on the other side of the processing gap (13); the working ring (15) is To eliminate the warpage caused by the lack of support on the periphery of the processed part of the wafer (1) (see Figure 10b).
又，請參考第2a圖所示之流程圖，其由步驟A(51)、步驟B(52)、步驟C1(531)所構成。 Also, please refer to the flowchart shown in FIG. 2a, which is composed of step A (51), step B (52), and step C1 (531).
其中，見第2a圖所示，該步驟A(51)係為將一晶圓(1)放置於一工作平台(11)上。 Among them, as shown in FIG. 2a, the step A (51) is to place a wafer (1) on a working platform (11).
再，見第2a圖所示，該步驟B(52)係為由該工作平台(11)內之至少一白努力吸盤(21)針對該晶圓(1)大範圍翹曲整平。 Furthermore, as shown in FIG. 2a, the step B (52) is to flatten the wafer (1) in a wide range by at least one white effort chuck (21) in the working platform (11).
最後，見第2a圖所示，該步驟C1(531)係為由設於該工作平台(11)之一多孔陶瓷單元(41)將該晶圓(1)除了該工作平台(11)之一加工缺口(13)外之範圍翹曲整平。 Finally, as shown in FIG. 2a, the step C1 (531) is that a porous ceramic unit (41) provided on the working platform (11) removes the wafer (1) from the working platform (11) 1. Warping and leveling outside the processing gap (13).
此步驟C1(531)係真空幫浦啟動後，經多孔陶瓷吸氣孔(42)通氣，由多孔陶瓷單元(41)內部的空氣被抽走，形成了真空狀態，該晶圓(1)在外部壓力的作用下被吸起，藉此整平翹曲之該晶圓(1)。 In this step C1 (531), after the vacuum pump is started, the air is vented through the porous ceramic suction hole (42), and the air inside the porous ceramic unit (41) is drawn away to form a vacuum state. The wafer (1) is It is sucked up under the action of external pressure, thereby leveling the warped wafer (1).
較佳著，可於第2a圖步驟B(52)與步驟C(53)間增加步驟B1(521)及步驟B2(522)，請再參考第2b圖之步驟B1(521)及步驟B2(522)表示；步驟B1(521)詳細描述如下，步驟B(52)之後，由一整平治具從該晶圓(1)上方壓下；步驟B2(522)詳細描述如下，步驟B(52)之後，由設置於該加工缺口(13)另一側之該承載模組(10)之一工作環(15)輔助保持該晶圓(1)之外圍平整。 Preferably, step B1 (521) and step B2 (522) can be added between step B (52) and step C (53) in Figure 2a. Please refer to step B1 (521) and step B2 in Figure 2b. 522); Step B1 (521) is described in detail as follows. After Step B (52), a leveling jig is pressed from above the wafer (1); Step B2 (522) is described in detail as follows, Step B (52) After that, a working ring (15) of the carrier module (10) provided on the other side of the processing gap (13) assists in keeping the periphery of the wafer (1) flat.
以下就以本發明一種晶圓整平吸盤結構及其方法之第二實施型態為例，針對本發明的實施過程做一詳細的說明如下所示。 Taking the second embodiment of a wafer leveling chuck structure and method of the present invention as an example, a detailed description of the implementation process of the present invention is shown below.
首先，如8b或10b圖所示，將晶圓(1)置於該工作平台(11)上；此時，見第11a圖，可見白努力吸盤(21)與多孔陶瓷單元(41)未與晶圓(1)實際接觸，而多孔陶瓷單元(41)與晶圓(1)距離分別為Y與Z。 First, as shown in Figure 8b or 10b, place the wafer (1) on the working platform (11); at this time, see Figure 11a, it can be seen that the white effort chuck (21) and the porous ceramic unit (41) are not The wafer (1) is actually in contact, and the distance between the porous ceramic unit (41) and the wafer (1) is Y and Z, respectively.
接著，如11b圖所示，由該工作平台(11)內之至少一白努力吸盤(21)針對該晶圓(1)大範圍翹曲整平；此時，見第7b圖，可見白努力吸盤(21)與多孔陶瓷單元(41)未與晶圓(1)實際接觸，而多孔陶瓷單元(41)與晶圓(1)距離分別為Y`與Z`。 Next, as shown in FIG. 11b, at least one white effort chuck (21) in the working platform (11) is flattened to a large extent for the wafer (1); at this time, see FIG. 7b, it can be seen that the white effort The chuck (21) and the porous ceramic unit (41) are not in actual contact with the wafer (1), and the distance between the porous ceramic unit (41) and the wafer (1) is Y` and Z`, respectively.
最後，見第11c圖所示，由設於該工作平台(11)之多孔陶瓷單元(41)將該晶圓(1)接近該工作平台(11)之一加工缺口(13)外之範圍翹曲整平；此時，見第11c圖，可見白努力吸盤(21)與多孔陶瓷單元(41)與晶圓(1)實際接觸。 Finally, as shown in FIG. 11c, the porous ceramic unit (41) provided on the working platform (11) warps the wafer (1) close to a range outside the processing gap (13) of the working platform (11) Curved and leveled; at this time, see Fig. 11c, it can be seen that the white effort sucker (21) and the porous ceramic unit (41) are actually in contact with the wafer (1).
因此本發明之功效有別於一般晶圓整平吸盤，此於半導體業內當中實屬首創，符合發明專利要件，爰依法俱文提出申請。 Therefore, the effect of the present invention is different from ordinary wafer leveling chucks, which is really the first in the semiconductor industry, and meets the requirements of the invention patent.
惟，需再次重申，以上所述者僅為本發明之較佳實施型態，舉凡應用本發明說明書、申請專利範圍或圖式所為之等效變化，仍屬本發明所保護之技術範疇，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 However, it needs to be reiterated that the above are only the preferred embodiments of the present invention. Any equivalent changes in the description, patent application or drawings of the present invention are still within the technical scope of the present invention, so The scope of protection of the present invention shall be subject to the scope defined in the attached patent application.
51‧‧‧步驟A 51‧‧‧Step A
52‧‧‧步驟B 52‧‧‧Step B
53‧‧‧步驟C 53‧‧‧Step C
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