TWI810008B - Substrate processing apparatus - Google Patents
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- TWI810008B TWI810008B TW111129447A TW111129447A TWI810008B TW I810008 B TWI810008 B TW I810008B TW 111129447 A TW111129447 A TW 111129447A TW 111129447 A TW111129447 A TW 111129447A TW I810008 B TWI810008 B TW I810008B
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- 238000012545 processing Methods 0.000 title claims abstract description 536
- 239000000758 substrate Substances 0.000 title claims abstract description 353
- 239000007788 liquid Substances 0.000 claims abstract description 810
- 238000000034 method Methods 0.000 claims abstract description 231
- 238000005530 etching Methods 0.000 claims abstract description 107
- 238000007599 discharging Methods 0.000 claims abstract description 34
- 239000011259 mixed solution Substances 0.000 claims abstract description 19
- 238000002156 mixing Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims description 228
- 238000001816 cooling Methods 0.000 claims description 105
- 238000003860 storage Methods 0.000 claims description 67
- 238000001514 detection method Methods 0.000 claims description 30
- 230000004044 response Effects 0.000 claims description 7
- 239000013589 supplement Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 abstract description 27
- 230000008025 crystallization Effects 0.000 abstract description 27
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 536
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 268
- 239000007864 aqueous solution Substances 0.000 description 253
- 239000000126 substance Substances 0.000 description 149
- 239000000243 solution Substances 0.000 description 83
- 238000010129 solution processing Methods 0.000 description 66
- 238000003672 processing method Methods 0.000 description 32
- 238000010586 diagram Methods 0.000 description 22
- 238000012544 monitoring process Methods 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 230000006870 function Effects 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 12
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000012530 fluid Substances 0.000 description 8
- 239000002699 waste material Substances 0.000 description 7
- 125000004122 cyclic group Chemical group 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000007781 pre-processing Methods 0.000 description 6
- 230000009469 supplementation Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000003814 drug Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
本發明之課題，在於提供一種基板處理技術，其在自處理部朝向基板處理裝置外排出處理液之路徑中，難以產生處理液中來自基板之溶出成分的結晶化。 本發明之基板處理裝置具備有處理部、液體供給部、液體排出部、液體補充部及控制部。處理部藉由處理液來進行對基板之蝕刻處理。液體供給部具有對處理部供給處理液之液體供給管部。液體排出部具有用以將在處理部被使用於對基板之蝕刻處理後的第1處理液自處理部排出至基板處理裝置之外之液體排出管部。液體補充部為了將構成基板之成分的溶解濃度低於第1處理液之第2處理液補充至液體排出部，藉此混合第1處理液與第2處理液來生成混合溶液，而具有被連接於液體排出部之液體補充管部。控制部對液體供給部所進行之處理液朝向處理部的供給、及液體補充部所進行之上述第2處理液朝向液體排出部的補充進行控制。 An object of the present invention is to provide a substrate processing technique in which crystallization of components eluted from the substrate in the processing liquid is less likely to occur in the path of discharging the processing liquid from the processing part toward the outside of the substrate processing apparatus. The substrate processing apparatus of the present invention includes a processing unit, a liquid supply unit, a liquid discharge unit, a liquid replenishment unit, and a control unit. The processing part performs etching processing on the substrate by using the processing liquid. The liquid supply part has a liquid supply pipe part for supplying the processing liquid to the processing part. The liquid discharge part has a liquid discharge pipe part for discharging the first processing liquid used in the processing part to etch the substrate from the processing part to the outside of the substrate processing apparatus. The liquid replenishing unit is connected to supply the liquid discharge unit with the second processing liquid having a lower dissolved concentration of components constituting the substrate than the first processing liquid, thereby mixing the first processing liquid and the second processing liquid to generate a mixed solution. The liquid replenishment pipe in the liquid discharge part. The control unit controls the supply of the treatment liquid to the treatment unit by the liquid supply unit and the replenishment of the second treatment liquid to the liquid discharge unit by the liquid replenishment unit.
Description
本發明關於藉由處理液而對半導體晶圓、液晶顯示器用基板、電漿顯示器用基板、有機EL(Electroluminescence；電致發光)用基板、FED(Field Emission Display；場發射顯示器)用基板、光顯示器用基板、磁碟用基板、光磁碟用基板、光罩用基板及太陽能電池用基板等之基板實施蝕刻處理的技術。The present invention relates to semiconductor wafers, liquid crystal display substrates, plasma display substrates, organic EL (Electroluminescence; electroluminescence) substrates, FED (Field Emission Display; field emission display) substrates, optical The technique of etching substrates such as substrates for displays, substrates for magnetic disks, substrates for optical magnetic disks, substrates for photomasks, and substrates for solar cells.
已知有藉由使基板浸漬於被貯存在處理槽之處理液中，而對基板實施蝕刻處理之基板處理裝置(例如專利文獻1等)。此處，例如進行利用磷酸(H 3PO 4)之水溶液(磷酸水溶液)等之處理液使被形成於基板之表面之氮化矽之膜溶出的處理(蝕刻處理)。在該裝置中，例如設置有相對於處理槽使處理液循環之具有泵、加熱器及過濾器的循環線。又，若於處理槽中進行利用處理液之基板之蝕刻處理，於被貯存在處理槽之處理液中自基板所溶出之溶出成分的濃度便會上升。而且，例如關於溶出成分之濃度較高的處理液，可藉由廢棄線而被排出至基板處理裝置之外。 [先前技術文獻] [專利文獻] There is known a substrate processing apparatus that etches a substrate by immersing the substrate in a processing liquid stored in a processing tank (for example, Patent Document 1, etc.). Here, for example, treatment (etching treatment) of eluting the silicon nitride film formed on the surface of the substrate is performed using a treatment solution such as an aqueous solution of phosphoric acid (H 3 PO 4 ) (phosphoric acid aqueous solution). In this apparatus, for example, a circulation line including a pump, a heater, and a filter for circulating the treatment liquid to the treatment tank is provided. Also, if the etching process of the substrate using the processing liquid is performed in the processing tank, the concentration of the eluted components eluted from the substrate in the processing liquid stored in the processing tank increases. Furthermore, for example, the processing liquid with a high concentration of eluted components can be discharged out of the substrate processing apparatus through the waste line. [Prior Art Document] [Patent Document]
[專利文獻1] 日本專利特開2018-6623號公報[Patent Document 1] Japanese Patent Laid-Open No. 2018-6623
(發明所欲解決之問題)(Problem to be solved by the invention)
然而，在專利文獻1等所記載之基板處理裝置中，例如蝕刻處理所使用之處理液，會自處理槽被送至冷卻箱，並於藉由該冷卻箱所冷卻後，藉由廢棄線被排出至基板處理裝置之外。於該情形時，例如在廢棄線中，存在有處理液中基板的溶出成分結晶化而發生廢棄線堵塞等之不良情況之情形。However, in the substrate processing apparatus described in Patent Document 1 and the like, for example, the processing liquid used in the etching process is sent from the processing tank to the cooling box, and after being cooled by the cooling box, it is discharged by the waste line. Discharged to the outside of the substrate processing equipment. In this case, for example, in the disposal line, the eluted components of the substrate in the processing liquid may crystallize, causing problems such as clogging of the disposal line.
例如，於藉由磷酸水溶液等之處理液對被形成在基板之表面之氮化矽之膜實施蝕刻處理之情形時，自基板溶出之矽會依據成為處理對象之基板的片數及蝕刻處理的時間等，而逐漸地蓄積於磷酸水溶液中。然後，磷酸水溶液中之矽的濃度(亦稱為矽氧烷(SiO 2成分)濃度)會變高。此處，例如，於磷酸水溶液自處理槽被送至冷卻箱，並在藉由該冷卻箱所冷卻後，藉由廢棄線而排出至基板處理裝置之外之情形時，存在有於廢棄線中，磷酸水溶液中之矽氧烷會結晶化而發生廢棄線堵塞之不良情況的可能性。 For example, when etching a silicon nitride film formed on the surface of a substrate with a treatment liquid such as phosphoric acid aqueous solution, silicon eluted from the substrate depends on the number of substrates to be processed and the etching process. Time, etc., and gradually accumulate in the phosphoric acid aqueous solution. Then, the silicon concentration (also called siloxane (SiO 2 component) concentration) in the phosphoric acid aqueous solution becomes higher. Here, for example, when the phosphoric acid aqueous solution is sent from the processing tank to the cooling box, and after being cooled by the cooling box, it is discharged to the outside of the substrate processing equipment through the waste line, and exists in the waste line , The siloxane in the phosphoric acid aqueous solution will crystallize and the possibility of clogging the waste line will occur.
若發生如此之廢棄線堵塞之不良情況，例如，直至解決廢棄線之堵塞為止，將會變得無法使用基板處理裝置。If such a problem of waste line clogging occurs, for example, the substrate processing apparatus cannot be used until the waste line clogging is resolved.
如此之問題並不限定於藉由使基板浸漬於被貯存在處理槽之處理液而對基板實施蝕刻處理之所謂批次式之基板處理裝置，一般而言，上述問題亦會發生於自噴嘴對基板吐出處理液而對基板實施使用處理液之蝕刻處理之所謂單片式之基板處理裝置等之基板處理裝置。Such a problem is not limited to a so-called batch type substrate processing apparatus that etches a substrate by immersing the substrate in a processing liquid stored in a processing tank. Generally speaking, the above-mentioned problem also occurs from the nozzle to the substrate. A substrate processing apparatus such as a so-called single-wafer type substrate processing apparatus that discharges a processing liquid from a substrate and performs an etching process using the processing liquid on the substrate.
本發明係鑑於上述課題所完成者，其目的在於提供一種基板處理技術，其在自處理部朝向基板處理裝置外排出處理液之路徑中，難以產生處理液中來自基板之溶出成分的結晶化。 (解決問題之技術手段) The present invention was made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing technique in which crystallization of components eluted from a substrate in a processing liquid hardly occurs in a path for discharging the processing liquid from a processing part toward the outside of a substrate processing apparatus. (technical means to solve the problem)
為了解決上述課題，第1態樣之基板處理裝置具備有處理部、液體供給部、液體排出部、液體補充部及控制部。上述處理部藉由處理液來進行對基板之蝕刻處理。上述液體供給部具有對上述處理部供給上述處理液之液體供給管部。上述液體排出部具有用以將在上述處理部被使用於對上述基板之上述蝕刻處理後的第1處理液自上述處理部排出至上述基板處理裝置之外之液體排出管部。上述液體補充部為了將構成上述基板之成分的溶解濃度低於上述第1處理液之第2處理液補充至上述液體排出部，藉此混合上述第1處理液與上述第2處理液來生成混合溶液，而具有被連接於上述液體排出部之液體補充管部。上述控制部對上述液體供給部所進行之上述處理液朝向上述處理部的供給、及上述液體補充部所進行之上述第2處理液朝向上述液體排出部的補充進行控制。In order to solve the above-mentioned problems, the substrate processing apparatus of the first aspect includes a processing unit, a liquid supply unit, a liquid discharge unit, a liquid replenishment unit, and a control unit. The processing unit performs etching processing on the substrate using a processing liquid. The liquid supply part has a liquid supply pipe part for supplying the processing liquid to the processing part. The liquid discharge part has a liquid discharge pipe part for discharging the first processing liquid used in the processing part to perform the etching process on the substrate from the processing part to the outside of the substrate processing apparatus. The liquid replenishing unit replenishes the second processing liquid having a lower dissolved concentration of components constituting the substrate than the first processing liquid to the liquid discharge portion, thereby mixing the first processing liquid and the second processing liquid to form a mixed solution, and has a liquid replenishment pipe connected to the above-mentioned liquid discharge part. The control unit controls the supply of the treatment liquid to the treatment unit by the liquid supply unit and the replenishment of the second treatment liquid to the liquid discharge unit by the liquid replenishment unit.
第2態樣之基板處理裝置係第1態樣之基板處理裝置，其中，上述液體補充部藉由將上述第2處理液混合於上述第1處理液，而使上述混合溶液中構成上述基板之成分的溶解濃度未達至溶解度。The substrate processing apparatus of the second aspect is the substrate processing apparatus of the first aspect, wherein the liquid replenishing unit mixes the second processing liquid with the first processing liquid so that the mixed solution constitutes the substrate. The dissolved concentration of the ingredients does not reach solubility.
第3態樣之基板處理裝置係第1或第2態樣之基板處理裝置，其中，上述處理液包含磷酸水溶液，上述基板具有氮化矽之膜，上述蝕刻處理包含有藉由上述磷酸水溶液使上述氮化矽之膜溶解的處理。A substrate processing apparatus according to a third aspect is the substrate processing apparatus according to the first or second aspect, wherein the processing solution includes an aqueous phosphoric acid solution, the substrate has a silicon nitride film, and the etching includes treating the substrate with the aqueous phosphoric acid solution. The above-mentioned process of dissolving the silicon nitride film.
第4態樣之基板處理裝置係第1至第3中任一態樣之基板處理裝置，其中，上述液體供給部對上述處理部供給上述第2處理液。A substrate processing apparatus according to a fourth aspect is the substrate processing apparatus according to any one of the first to third aspects, wherein the liquid supply unit supplies the second processing liquid to the processing unit.
第5態樣之基板處理裝置係第1至第4中任一態樣之基板處理裝置，其中，上述處理部因應於來自上述液體供給部之上述處理液的供給，將上述第1處理液排出至上述液體排出部，上述控制部於藉由上述處理部進行對上述基板之上述蝕刻處理時，使上述液體供給部所進行之上述處理液朝上述處理部的兩次以上之供給、及使上述液體補充部所進行之上述第2處理液朝向上述液體排出部之兩次以上的補充同步地執行。The substrate processing apparatus of a fifth aspect is the substrate processing apparatus of any one of the first to fourth aspects, wherein the processing section discharges the first processing liquid in response to the supply of the processing liquid from the liquid supply section. In the liquid discharge unit, the control unit, when performing the etching process on the substrate by the processing unit, supplies the processing liquid to the processing unit twice or more by the liquid supply unit, and makes the Two or more replenishments of the second processing liquid to the liquid discharge unit by the liquid replenishment unit are performed simultaneously.
第6態樣之基板處理裝置係第1至第5中任一態樣之基板處理裝置，其中，上述處理部因應於來自上述液體供給部之上述處理液的供給，將上述第1處理液排出至上述液體排出部，上述控制部於藉由上述處理部進行對上述基板之上述蝕刻處理前，使上述液體補充部所進行之上述第2處理液朝向上述液體排出部的補充予以執行至少一次，並於藉由上述處理部進行對上述基板之上述蝕刻處理時，使上述液體供給部所進行之上述處理液朝向上述處理部的供給、及上述液體補充部所進行之上述第2處理液朝向上述液體排出部的補充予以執行。A substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to any one of the first to fifth aspects, wherein the processing section discharges the first processing liquid in response to the supply of the processing liquid from the liquid supply section. To the liquid discharge unit, the control unit causes the liquid replenishment unit to replenish the second processing liquid to the liquid discharge unit at least once before performing the etching process on the substrate by the processing unit, And when the above-mentioned etching process on the above-mentioned substrate is performed by the above-mentioned processing part, the supply of the above-mentioned processing liquid by the above-mentioned liquid supply part to the above-mentioned processing part, and the above-mentioned second processing liquid by the above-mentioned liquid supply part are directed to the above-mentioned Replenishment of the liquid discharge is carried out.
第7態樣之基板處理裝置係第1至第6中任一態樣之基板處理裝置，其中，上述控制部於上述處理部所進行之對上述基板之上述蝕刻處理被執行之後且至接下來之上述處理部所進行之對上述基板之上述蝕刻處理被執行為止的期間，在既定的時間點藉由上述液體補充部使上述第2處理液朝向上述液體排出部的補充予以執行。A substrate processing apparatus according to a seventh aspect is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the control unit is performed after the etching process on the substrate by the processing unit is performed and to the next During the period until the etching process on the substrate by the processing unit is performed, the second processing liquid is replenished toward the liquid discharge unit by the liquid replenishing unit at a predetermined time point.
第8態樣之基板處理裝置係第1至第7中任一態樣之基板處理裝置，其中，上述液體排出部進一步包含有將上述第1處理液加以冷卻之冷卻箱，上述液體排出管部包含有連接上述處理部與上述冷卻箱之第1部分、及被連接於上述冷卻箱而用以將液體排出至上述基板處理裝置之外之第2部分。The substrate processing apparatus of an eighth aspect is the substrate processing apparatus of any one of the first to seventh aspects, wherein the liquid discharge part further includes a cooling box for cooling the first processing liquid, and the liquid discharge pipe part It includes a first part that connects the processing unit and the cooling box, and a second part that is connected to the cooling box and discharges liquid out of the substrate processing apparatus.
第9態樣之基板處理裝置係第8態樣之基板處理裝置，其中，上述液體排出部進一步包含有對被貯存在上述冷卻箱之液體之貯存量進行檢測的檢測部，上述處理部依據來自上述液體供給部之上述處理液的供給將上述第1處理液排出至上述液體排出部，上述控制部若在上述檢測部檢測出上述貯存量到達第1臨限值之情形時，則禁止上述處理部所進行之對上述基板之上述蝕刻處理的執行。The substrate processing apparatus of the ninth aspect is the substrate processing apparatus of the eighth aspect, wherein the liquid discharge unit further includes a detection unit for detecting the storage amount of the liquid stored in the cooling tank, and the processing unit is based on the The supply of the treatment liquid by the liquid supply unit discharges the first treatment liquid to the liquid discharge unit, and the control unit prohibits the treatment when the detection unit detects that the stored amount reaches a first threshold value. The execution of the above-mentioned etching process on the above-mentioned substrate performed by the department.
第10態樣之基板處理裝置係第7態樣之基板處理裝置，其中，上述液體排出部進一步包含有將上述第1處理液加以冷卻之冷卻箱，上述液體排出管部包含有連接上述處理部與上述冷卻箱之第1部分、及被連接於上述冷卻箱而用以將液體排出至上述基板處理裝置之外之第2部分，上述液體排出部進一步包含有對被貯存在上述冷卻箱之液體之貯存量進行檢測之檢測部，上述控制部若在由上述檢測部檢測出上述貯存量到達第2臨限值之情形時，則禁止在上述既定之時間點之上述液體補充部所進行之上述第2處理液朝向上述液體排出部之補充的執行。The substrate processing apparatus of the tenth aspect is the substrate processing apparatus of the seventh aspect, wherein the liquid discharge part further includes a cooling box for cooling the first processing liquid, and the liquid discharge pipe part includes a tube connected to the processing part. The first part of the cooling box and the second part connected to the cooling box to discharge the liquid out of the substrate processing apparatus, the liquid discharge part further includes a liquid stored in the cooling box The detection unit that detects the storage amount, if the control unit detects that the storage amount has reached the second threshold value by the detection unit, it will prohibit the above-mentioned fluid replenishment performed by the liquid replenishment unit at the predetermined time point. The replenishment of the second processing liquid to the above-mentioned liquid discharge part is executed.
第11態樣之基板處理方法係基板處理裝置之基板處理方法，其具備有：蝕刻步驟、液體供給步驟、液體排出步驟及液體補充步驟。在上述蝕刻步驟中，於處理部藉由處理液進行對基板之蝕刻處理。在上述液體供給步驟中，經由液體供給管部對上述處理部供給上述處理液。在上述液體排出步驟中，經由包含有液體排出管部之液體排出部將在上述蝕刻步驟所使用後之第1處理液自上述處理部排出至上述基板處理裝置之外。在上述液體補充步驟中，經由液體補充管部將構成上述基板之成分之溶解濃度低於上述第1處理液之第2處理液補充至上述液體排出部，藉此混合上述第1處理液與上述第2處理液來生成混合溶液。A substrate processing method according to an eleventh aspect is a substrate processing method of a substrate processing apparatus, and includes an etching step, a liquid supply step, a liquid discharge step, and a liquid replenishment step. In the above etching step, the substrate is etched with the treatment liquid in the treatment section. In the liquid supply step, the processing liquid is supplied to the processing unit via a liquid supply pipe. In the liquid discharge step, the first processing liquid used in the etching step is discharged from the processing unit to the outside of the substrate processing apparatus through a liquid discharge unit including a liquid discharge pipe unit. In the liquid replenishing step, a second processing liquid having a lower dissolved concentration of components constituting the substrate than the first processing liquid is replenished to the liquid discharge part through a liquid replenishing pipe part, thereby mixing the first processing liquid and the The second treatment solution is used to generate a mixed solution.
第12態樣之基板處理方法係第11態樣之基板處理方法，其中，在上述液體補充步驟中，藉由將上述第2處理液混合於上述第1處理液，而使上述混合溶液中構成上述基板之成分的溶解濃度未達至溶解度。The substrate processing method of the twelfth aspect is the substrate processing method of the eleventh aspect, wherein, in the liquid replenishing step, by mixing the second processing liquid with the first processing liquid, the mixed solution constitutes The dissolved concentration of the components of the above-mentioned substrate does not reach the solubility.
第13態樣之基板處理方法係第11或第12態樣之基板處理方法，其中，上述處理液包含磷酸水溶液，上述基板具有氮化矽之膜，在上述蝕刻步驟中，藉由上述磷酸水溶液使上述氮化矽之膜溶解。A substrate processing method according to a thirteenth aspect is the substrate processing method according to the eleventh or twelfth aspect, wherein the treatment solution includes an aqueous phosphoric acid solution, the substrate has a silicon nitride film, and in the etching step, the phosphoric acid aqueous solution The above silicon nitride film was dissolved.
第14態樣之基板處理方法係第11至第13中任一態樣之基板處理方法，其中，在上述液體供給步驟中，經由上述液體供給管部對上述處理部供給上述第2處理液。A substrate processing method according to a fourteenth aspect is the substrate processing method according to any one of the eleventh to thirteenth aspects, wherein in the liquid supply step, the second processing liquid is supplied to the processing part through the liquid supply pipe part.
第15態樣之基板處理方法係第11至第14中任一態樣之基板處理方法，其中，在上述液體排出步驟中，上述處理部依據上述液體供給步驟之上述處理液的供給，將上述第1處理液排出至上述液體排出部，於在上述蝕刻步驟中進行上述蝕刻處理時，使上述液體供給步驟中經由上述液體供給管部之上述處理液朝向上述處理部之兩次以上的供給、及上述液體補充步驟中經由上述液體補充管部之上述第2處理液朝向上述液體排出部之兩次以上的補充同步地執行。The substrate processing method according to a fifteenth aspect is the substrate processing method according to any one of the eleventh to fourteenth aspects, wherein in the liquid discharge step, the processing unit supplies the above-mentioned The first processing liquid is discharged to the liquid discharge part, and when the etching process is performed in the etching step, the processing liquid is supplied to the processing part twice or more through the liquid supply pipe part in the liquid supply step, In the liquid replenishing step, two or more replenishments of the second processing liquid through the liquid replenishing pipe part to the liquid discharge part are performed simultaneously.
第16態樣之基板處理方法係第11至第15中任一態樣之基板處理方法，其中，於上述液體排出步驟中，因應於上述液體供給步驟中經由上述液體供給管部之上述處理液朝向上述處理部的供給，而將上述第1處理液自上述處理部排出至上述液體排出部，於上述蝕刻步驟中上述蝕刻處理之前，執行至少一次上述液體補充步驟中經由上述液體補充管部之上述第2處理液朝向上述液體排出部的補充，於在上述蝕刻步驟中進行上述蝕刻處理時，執行上述液體供給步驟中經由上述液體供給管部之上述處理液朝向上述處理部的供給，並且執行上述液體補充步驟中經由上述液體補充管部之上述第2處理液朝向上述液體排出部的補充。The substrate processing method of the sixteenth aspect is the substrate processing method of any one of the eleventh to fifteenth aspects, wherein, in the liquid discharge step, the processing liquid passed through the liquid supply pipe part in the liquid supply step is supplying to the above-mentioned processing part, and discharging the above-mentioned first processing liquid from the above-mentioned processing part to the above-mentioned liquid discharge part, before the above-mentioned etching process in the above-mentioned etching step, performing at least one pass through the above-mentioned liquid replenishing pipe part in the above-mentioned liquid replenishing step The replenishment of the second processing liquid to the liquid discharge part is carried out when the etching process is performed in the etching step, the supply of the processing liquid to the processing part through the liquid supply pipe part in the liquid supply step is performed, and the In the liquid replenishment step, the second treatment liquid passing through the liquid replenishment pipe part is replenished toward the liquid discharge part.
第17態樣之基板處理方法係第11至第16中任一態樣之基板處理方法，其中，於上述蝕刻步驟中上述蝕刻處理被執行之後且至接下來之上述蝕刻步驟之上述蝕刻處理被執行為止之期間，在既定之時間點執行上述液體補充步驟中經由上述液體補充管部之上述第2處理液朝向上述液體排出部的補充。The substrate processing method of the seventeenth aspect is the substrate processing method of any one of the eleventh to sixteenth aspects, wherein the etching process is carried out after the etching process is performed in the etching step and until the next etching step is performed. During the execution, the replenishment of the second processing liquid through the liquid replenishment pipe part toward the liquid discharge part in the liquid replenishment step is carried out at a predetermined time point.
第18態樣之基板處理方法係第11至第17中任一態樣之基板處理方法，其中，上述液體排出步驟包含有：將上述第1處理液自上述處理部排出至上述液體排出管部所包含之第1部分的第1液體排出步驟、於被包含於上述液體排出部且被連接於上述第1部分之冷卻箱中將上述第1處理液或上述混合溶液加以冷卻的液體冷卻步驟、及自上述冷卻箱經由被包含於上述液體排出管部且被連接於上述冷卻箱之第2部分而將上述混合溶液排出至上述基板處理裝置之外的第2液體排出步驟。The substrate processing method of an eighteenth aspect is the substrate processing method of any one of the eleventh to seventeenth aspects, wherein the liquid discharging step includes: discharging the first processing liquid from the processing part to the liquid discharge pipe part The first liquid discharge step included in the first part, the liquid cooling step of cooling the first treatment liquid or the mixed solution in a cooling box included in the liquid discharge part and connected to the first part, and a second liquid discharge step of discharging the mixed solution from the cooling box to the outside of the substrate processing apparatus through a second portion included in the liquid discharge pipe portion and connected to the cooling box.
第19態樣之基板處理方法係第18態樣之基板處理方法，其中，其進一步具有對被貯存在上述冷卻箱之液體之貯存量進行檢測的檢測步驟，於上述液體排出步驟中，因應於上述液體供給步驟中經由上述液體供給管部之上述處理液朝向上述處理部的供給，而將上述第1處理液自上述處理部排出至上述液體排出部，若於上述檢測步驟中被檢測出上述貯存量到達第1臨限值之情形時，則禁止上述蝕刻步驟之上述蝕刻處理的執行。The substrate processing method of the nineteenth aspect is the substrate processing method of the eighteenth aspect, further comprising a detection step of detecting the storage amount of the liquid stored in the cooling box, and in the liquid discharge step, in response to In the above-mentioned liquid supply step, the above-mentioned processing liquid is supplied to the above-mentioned processing part through the above-mentioned liquid supply pipe part, and the above-mentioned first processing liquid is discharged from the above-mentioned processing part to the above-mentioned liquid discharge part. When the storage amount reaches the first threshold value, the execution of the above-mentioned etching process in the above-mentioned etching step is prohibited.
第20態樣之基板處理方法係第17態樣之基板處理方法，其中，上述液體排出步驟包含有：將上述第1處理液自上述處理部排出至上述液體排出管部所包含之第1部分的第1液體排出步驟、於被包含於上述液體排出部且被連接於上述第1部分之冷卻箱中將上述第1處理液或上述混合溶液加以冷卻的液體冷卻步驟、及自上述冷卻箱經由被包含於上述液體排出管部且被連接於上述冷卻箱之第2部分而將上述混合溶液排出至上述基板處理裝置之外的第2液體排出步驟，上述基板處理方法進一步具有對被貯存在上述冷卻箱之液體之貯存量進行檢測的檢測步驟，若於上述檢測步驟中在被檢測出上述貯存量到達第2臨限值之情形時，則禁止上述液體補充步驟中在上述既定之時間點經由上述液體補充管部之上述第2處理液朝向上述液體排出部的補充。 (對照先前技術之功效) The substrate processing method of the twentieth aspect is the substrate processing method of the seventeenth aspect, wherein the liquid discharging step includes: discharging the first processing liquid from the processing part to the first part included in the liquid discharge pipe part The first liquid discharge step, the liquid cooling step of cooling the first treatment liquid or the mixed solution in the cooling box included in the liquid discharge part and connected to the first part, and passing through the cooling box from the cooling box In the second liquid discharge step included in the liquid discharge pipe part and connected to the second part of the cooling box to discharge the mixed solution out of the substrate processing apparatus, the substrate processing method further includes The detection step of detecting the storage amount of the liquid in the cooling tank, if it is detected that the storage amount reaches the second threshold value in the above detection step, it is forbidden to pass through at the above predetermined time point in the above liquid replenishment step The second processing liquid in the liquid replenishment pipe part is replenished toward the liquid discharge part. (compared to the effect of previous technology)
無論根據第1態樣之基板處理裝置及第11態樣之基板處理方法的任一者，例如，於自處理部將第1處理液排出基板處理裝置外時，可將構成基板之成分的溶解濃度相對較低之第2處理液混合至該第1處理液而加以排出。藉此，例如在自處理部朝向基板處理裝置外排出處理液之路徑中，處理液中來自基板之溶出成分的結晶化將難以發生。In either of the substrate processing apparatus of the first aspect and the substrate processing method of the eleventh aspect, for example, when the first processing liquid is discharged out of the substrate processing apparatus from the processing section, the components constituting the substrate can be dissolved. The relatively low-concentration second treatment liquid is mixed with the first treatment liquid and discharged. Thereby, crystallization of components eluted from the substrate in the processing liquid is less likely to occur, for example, in a path for discharging the processing liquid from the processing section toward the outside of the substrate processing apparatus.
無論根據第2態樣之基板處理裝置及第12態樣之基板處理方法的任一者，例如，使將第2處理液混合至第1處理液所生成之混合溶液中構成基板之成分的溶解濃度成為未達至溶解度，藉此在自處理部朝向基板處理裝置外排出處理液之路徑中，處理液中來自基板之溶出成分的結晶化將難以發生。Regardless of any one of the substrate processing apparatus of the second aspect and the substrate processing method of the twelfth aspect, for example, dissolving components constituting the substrate in a mixed solution generated by mixing the second processing liquid with the first processing liquid When the concentration does not reach the solubility, crystallization of the eluted components from the substrate in the processing liquid hardly occurs in the path of discharging the processing liquid from the processing part toward the outside of the substrate processing apparatus.
無論根據第3態樣之基板處理裝置及第13態樣之基板處理方法的任一者，例如，於自處理部將第1磷酸水溶液排出至基板處理裝置外時，可將矽之溶解濃度相對較低之第2磷酸水溶液混合至該第1磷酸水溶液而加以排出。藉此，例如在自處理部朝向基板處理裝置外排出磷酸水溶液之路徑中，矽氧烷之結晶化將難以發生。Regardless of any one of the substrate processing apparatus of the third aspect and the substrate processing method of the thirteenth aspect, for example, when the first aqueous phosphoric acid solution is discharged from the processing section to the outside of the substrate processing apparatus, the dissolved concentration of silicon can be compared to the substrate processing method of the thirteenth aspect. The lower second phosphoric acid aqueous solution is mixed with the first phosphoric acid aqueous solution and discharged. Thereby, for example, crystallization of siloxane is less likely to occur in the path for discharging the aqueous phosphoric acid solution from the processing unit toward the outside of the substrate processing apparatus.
無論根據第4態樣之基板處理裝置及第14態樣之基板處理方法的任一者，例如，可將用於供給處理部之第2處理液亦用於在液體排出部混合於第1處理液之用途上。藉此，例如可在將第2處理液供給至處理部的液體供給部、及用於在液體排出部對混合至第1處理液之第2處理液進行補充的液體補充部之間，謀求構成之至少一部分的共用化。其結果，例如可謀求基板處理裝置之構成的簡化。Regardless of any one of the substrate processing apparatus according to the fourth aspect and the substrate processing method according to the fourteenth aspect, for example, the second processing liquid supplied to the processing part can also be used to mix the first processing liquid in the liquid discharge part. Liquid use. Thereby, for example, a configuration can be achieved between the liquid supply part for supplying the second processing liquid to the processing part and the liquid replenishment part for replenishing the second processing liquid mixed with the first processing liquid in the liquid discharge part. Commonization of at least a portion of it. As a result, for example, the structure of the substrate processing apparatus can be simplified.
無論根據第5態樣之基板處理裝置及第15態樣之基板處理方法的任一者，例如，可於藉由處理部而對基板實施蝕刻處理時，與處理液朝向處理部之兩次以上之供給同步地，進行第1處理液自處理部朝向液體排出部之兩次以上的排出、及第2處理液朝向液體排出部之兩次以上的補充。藉此，例如在液體排出部所生成之混合溶液中構成基板之成分的溶解濃度可易於被均勻化。其結果，例如在自處理部朝向基板處理裝置外排出處理液之路徑中，處理液中來自基板之溶出成分的結晶化將難以發生。Regardless of any one of the substrate processing apparatus according to the fifth aspect and the substrate processing method according to the fifteenth aspect, for example, when the substrate is etched by the processing part, the processing liquid may go toward the processing part more than twice In synchronization with the supply, two or more discharges of the first processing liquid from the processing part to the liquid discharge part and two or more replenishments of the second processing liquid to the liquid discharge part are performed. Thereby, for example, the dissolved concentrations of the components constituting the substrate in the mixed solution generated by the liquid discharge section can be easily made uniform. As a result, for example, crystallization of components eluted from the substrate in the processing liquid is less likely to occur in a path for discharging the processing liquid from the processing unit toward the outside of the substrate processing apparatus.
無論根據第6態樣之基板處理裝置及第16態樣之基板處理方法的任一者，例如，於進行蝕刻處理前，進行至少一次第2處理液朝向液體排出部的供給，藉此於進行蝕刻處理時，使自處理部所排出之第1處理液與來自液體補充部之第2處理液可易於被混合。藉此，例如在自處理部朝向基板處理裝置外排出處理液之路徑中，處理液中來自基板的溶出成分的結晶化將難以發生。Regardless of any one of the substrate processing apparatus according to the sixth aspect and the substrate processing method according to the sixteenth aspect, for example, before performing the etching process, the second processing liquid is supplied to the liquid discharge part at least once, thereby performing the etching process. During the etching process, the first processing liquid discharged from the processing part and the second processing liquid from the liquid replenishing part can be easily mixed. This makes crystallization of components eluted from the substrate in the processing liquid less likely to occur, for example, in a path for discharging the processing liquid from the processing unit toward the outside of the substrate processing apparatus.
無論根據第7態樣之基板處理裝置及第17態樣之基板處理方法的任一者，例如，在處理部所進行之對基板之兩次以上之蝕刻處理之期間之蝕刻處理未被進行的間隔期間，第2處理液在既定之時間點會被補充至液體排出部。藉此，例如在自處理部朝向基板處理裝置外排出處理液之路徑中，處理液中來自基板之溶出成分的結晶化將難以發生。Regardless of any one of the substrate processing apparatus according to the seventh aspect and the substrate processing method according to the seventeenth aspect, for example, the etching process is not performed during the two or more etching processes performed on the substrate by the processing part During the interval, the second treatment liquid is replenished to the liquid discharge part at a predetermined time point. Thereby, crystallization of components eluted from the substrate in the processing liquid is less likely to occur, for example, in a path for discharging the processing liquid from the processing section toward the outside of the substrate processing apparatus.
無論根據第8態樣之基板處理裝置及第18態樣之基板處理方法的任一者，例如，即便第1處理液在冷卻箱被冷卻，在自處理部朝向基板處理裝置外排出處理液之路徑中，處理液中來自基板之溶出成分的結晶化仍將難以發生。Regardless of any one of the substrate processing apparatus according to the eighth aspect and the substrate processing method according to the eighteenth aspect, for example, even if the first processing liquid is cooled in the cooling box, after the processing liquid is discharged from the processing part toward the outside of the substrate processing apparatus In this route, the crystallization of the eluted components from the substrate in the treatment liquid will still hardly occur.
無論根據第9態樣之基板處理裝置及第19態樣之基板處理方法的任一者，例如，若於冷卻箱貯存有第1臨限值以上之液體，便不會在處理部中執行一邊供給處理液一邊排出第1處理液之基板的蝕刻處理。藉此，例如可抑制在對基板實施蝕刻處理時，因無法將第1處理液自處理部排出至液體排出部地進行蝕刻處理所導致之不良情況之發生的情形。Regardless of any one of the substrate processing apparatus according to the ninth aspect and the substrate processing method according to the nineteenth aspect, for example, if the liquid above the first threshold value is stored in the cooling box, it will not be executed in the processing part. Etching treatment of the substrate in which the first treatment solution is discharged while supplying the treatment solution. Thereby, for example, when etching the substrate, it is possible to suppress the occurrence of disadvantages caused by the etching process being unable to discharge the first processing liquid from the processing part to the liquid discharge part.
無論根據第10態樣之基板處理裝置及第20態樣之基板處理方法的任一者，例如，若於冷卻箱貯存有第2臨限值以上之液體，則在處理部所進行之蝕刻處理未被進行的間隔期間，便不會在既定之時間點執行第2處理液朝向液體排出部之補充。藉此，例如可抑制在間隔期間之後對基板實施蝕刻處理時，因無法將第1處理液自處理部排出至液體排出部地進行蝕刻處理所導致之不良情況之發生的情形。Regardless of any one of the substrate processing apparatus according to the tenth aspect and the substrate processing method according to the twentieth aspect, for example, if the liquid above the second threshold value is stored in the cooling box, the etching process performed in the processing part During the interval that is not performed, replenishment of the second processing liquid to the liquid discharge part is not performed at a predetermined point of time. Thereby, for example, when the etching process is performed on the substrate after the interval period, it is possible to suppress the occurrence of disadvantages caused by performing the etching process without discharging the first processing liquid from the processing part to the liquid discharge part.
以下，根據圖式來說明本發明之實施形態及變形例。圖式中對於具有相同構成及功能之部分標示相同的符號，並在下述說明中省略重複說明。又，圖式僅為示意性地被表示者，並非正確地圖示各圖之各種構造的尺寸及位置關係等者。Hereinafter, embodiments and modifications of the present invention will be described based on the drawings. In the drawings, the same symbols are assigned to parts having the same configuration and function, and repeated explanations will be omitted in the following description. In addition, the drawings are only schematically shown, and do not accurately show dimensions, positional relationships, and the like of various structures in each drawing.
＜1. 第1實施形態＞ ＜1-1. 基板處理裝置之構成＞ 圖1係表示第1實施形態之基板處理裝置100之概略性構成之一例的俯視圖。圖2係表示第1實施形態之基板處理裝置100之功能性構成之一例的方塊圖。基板處理裝置100例如可對基板W實施藥液處理、洗淨處理及乾燥處理。 ＜1. First Embodiment＞ <1-1. Configuration of substrate processing equipment> FIG. 1 is a plan view showing an example of a schematic configuration of a substrate processing apparatus 100 according to the first embodiment. FIG. 2 is a block diagram showing an example of the functional configuration of the substrate processing apparatus 100 according to the first embodiment. The substrate processing apparatus 100 can perform chemical solution processing, cleaning processing, and drying processing on the substrate W, for example.
如圖1所示，基板處理裝置100例如具備有投入部1、第1搬送部2、第2搬送部3、乾燥處理部4、第1液體處理部5、第2液體處理部6、送出部7、輸入部8、輸出部9及控制部10。As shown in FIG. 1 , the substrate processing apparatus 100 includes, for example, an input unit 1, a first conveyance unit 2, a second conveyance unit 3, a drying treatment unit 4, a first liquid treatment unit 5, a second liquid treatment unit 6, a delivery unit 7. Input part 8 , output part 9 and control part 10 .
投入部1例如為用以將複數片處理前之基板W自基板處理裝置100外投入基板處理裝置100內的部分。該投入部1例如具有可分別載置收納有複數片(例如25片)處理前之基板W之匣盒C1的2個載置台11。The input unit 1 is, for example, a part for inputting a plurality of unprocessed substrates W into the substrate processing apparatus 100 from outside the substrate processing apparatus 100 . The input unit 1 has, for example, two mounting tables 11 on which cassettes C1 containing a plurality of (for example, 25) unprocessed substrates W can be mounted, respectively.
送出部7例如為用以將複數片處理後之基板W自基板處理裝置100內送出至基板處理裝置100外的部分。該送出部7例如位在鄰接於投入部1之位置。該送出部7例如具有可分別載置匣盒C1之2個載置台71。於送出部7中，在將複數片(例如25片)處理後之基板W收納於匣盒C1之狀態下，可將複數片處理後之基板W連同匣盒C1整個送出至基板處理裝置100之外。The delivery unit 7 is, for example, a part for delivering a plurality of processed substrates W from the inside of the substrate processing apparatus 100 to the outside of the substrate processing apparatus 100 . The delivery unit 7 is located adjacent to the input unit 1, for example. The sending unit 7 has, for example, two mounting tables 71 on which the cassettes C1 can be respectively mounted. In the sending part 7, in the state where a plurality of processed substrates W (for example, 25 sheets) are stored in the cassette C1, the plurality of processed substrates W together with the cassette C1 can be sent out to the substrate processing apparatus 100. outside.
第1搬送部2例如存在於沿著投入部1與送出部7之位置。該第1搬送部2例如可取出被載置在投入部1之匣盒C1所收納的所有基板W，而對第2搬送部3進行搬送。又，第1搬送部2例如可自第2搬送部3接收處理後之基板W，並將該處理後之基板W對被載置在送出部7之載置台71上的匣盒C1進行搬送，而收納於該匣盒C1內。此處，第1搬送部2例如亦可對每個匣盒C1意認基板W之批次，而對被收納於匣盒C1之基板W的片數進行計測。The 1st conveyance part 2 exists in the position along the input part 1 and the delivery part 7, for example. The first transport unit 2 can, for example, take out all the substrates W stored in the cassette C1 placed on the input unit 1 and transport them to the second transport unit 3 . In addition, the first transport unit 2 can receive the processed substrate W from the second transport unit 3, for example, and transport the processed substrate W to the cassette C1 placed on the stage 71 of the delivery unit 7, It is stored in the cassette C1. Here, the first transport unit 2 may, for example, recognize the lot of the substrate W for each cassette C1 and measure the number of substrates W stored in the cassette C1.
第2搬送部3例如可沿著基板處理裝置100之長邊方向移動。沿著第2搬送部3之移動方向，自靠近第1搬送部2之側起依序地設置有乾燥處理部4、第1液體處理部5及第2液體處理部6。換言之，例如第1液體處理部5存在於與乾燥處理部4鄰接之位置，而第2液體處理部6存在於與該第1液體處理部5鄰接之位置。The second transport unit 3 is movable along the longitudinal direction of the substrate processing apparatus 100, for example. Along the moving direction of the second conveying part 3, a drying processing part 4, a first liquid processing part 5, and a second liquid processing part 6 are arranged in order from the side close to the first conveying part 2. In other words, for example, the first liquid processing unit 5 exists adjacent to the drying processing unit 4 , and the second liquid processing unit 6 exists adjacent to the first liquid processing unit 5 .
乾燥處理部4例如可將複數片基板W收納於低壓之腔室內並使其乾燥。The drying processing unit 4 can store a plurality of substrates W in a low-pressure chamber and dry them, for example.
第1液體處理部5例如具有洗淨處理部51、藥液處理部52、及副搬送部53。洗淨處理部51例如可以純水對複數片基板W實施洗淨之處理(亦稱為純水洗淨處理)。藥液處理部52例如可藉由包含藥液之處理液對複數片基板W實施處理(亦稱為藥液處理)。副搬送部53例如可在與第2搬送部3之間進行基板W之交接，並且可在洗淨處理部51及藥液處理部52之各者進行升降。The first liquid processing unit 5 includes, for example, a cleaning processing unit 51 , a chemical solution processing unit 52 , and a sub-conveying unit 53 . The cleaning processing unit 51 may, for example, perform processing of cleaning the plurality of substrates W with pure water (also referred to as pure water cleaning processing). The chemical solution processing unit 52 may, for example, process a plurality of substrates W with a treatment solution containing a chemical solution (also referred to as chemical solution treatment). The sub-conveyor unit 53 can, for example, transfer the substrate W to and from the second transport unit 3 , and can move up and down in each of the cleaning treatment unit 51 and the chemical solution treatment unit 52 .
第2液體處理部6例如與第1液體處理部5同樣地，具有洗淨處理部51、藥液處理部52、及副搬送部53。The second liquid processing unit 6 includes, for example, a cleaning processing unit 51 , a chemical solution processing unit 52 , and a sub-conveying unit 53 , similarly to the first liquid processing unit 5 .
輸入部8例如位在靠近載置台11之位置。該輸入部8例如為可供操作人員對各種資訊進行選擇或輸入的部分。該輸入部8例如由觸控面板等所構成。再者，輸入部8既可具有包含可進行按下等之各種操作之按鈕等的操作部，亦可具有可利用聲音進行輸入之麥克風等。操作人員例如藉由操作輸入部8，可分別對每個匣盒C1(批次)指定預先被儲存於控制部10之儲存部10c等之將用於處理基板之程序加以規定的配方。The input unit 8 is, for example, located close to the placement table 11 . The input unit 8 is, for example, a part where an operator can select or input various information. The input unit 8 is constituted by, for example, a touch panel or the like. In addition, the input part 8 may have the operation part including the button etc. which can perform various operations, such as pressing, and may have the microphone etc. which can input by voice. For example, by operating the input unit 8 , the operator can designate, for each cassette C1 (batch), a recipe for specifying a program for processing substrates stored in advance in the storage unit 10c of the control unit 10 or the like.
輸出部9例如位在靠近載置台11之位置。該輸出部9例如為可依據控制部10之控制來輸出各種資訊的部分。該輸出部9例如可包含可供視覺辨識地輸出各種資訊之顯示部及可供聽覺辨識地輸出各種資訊之揚聲器等。各種資訊例如可包含表示基板處理裝置100之各種狀態的資訊、及表示各種警報信號(警報)的資訊。The output unit 9 is, for example, located close to the mounting table 11 . The output unit 9 is, for example, a unit capable of outputting various information under the control of the control unit 10 . The output unit 9 may include, for example, a display unit that outputs various information visually, a speaker that outputs various information auditorily, and the like. Various information may include, for example, information indicating various states of the substrate processing apparatus 100 and information indicating various alarm signals (alarms).
具有上述構成之基板處理裝置100的動作例如如圖2所示般藉由控制部10而統括性地被控制。控制部10例如具有運算部10a、記憶體10b、儲存部10c及計時器10d等。The operation of the substrate processing apparatus 100 having the above configuration is collectively controlled by the control unit 10 as shown in FIG. 2 , for example. The control unit 10 has, for example, a calculation unit 10a, a memory 10b, a storage unit 10c, a timer 10d, and the like.
運算部10a例如可應用作為至少1個處理器而運作之中央運算部(CPU；Central Processing Unit；中央處理單元)等之電路。For example, circuits such as a central processing unit (CPU; Central Processing Unit; central processing unit) that operate as at least one processor can be applied to the calculation unit 10a.
記憶體10b例如可應用隨機存取記憶體(RAM；Random Access Memory)等之暫時性地儲存資訊的電路。藉由運算部10a之各種運算所暫時性地取得之各種資訊，適當地被儲存在記憶體10b等。The memory 10 b can be, for example, a circuit that temporarily stores information such as a random access memory (RAM; Random Access Memory). Various information temporarily obtained by various calculations performed by the calculation unit 10a is appropriately stored in the memory 10b or the like.
儲存部10c例如可應用硬碟或快閃記憶體等之儲存各種資訊之非揮發性的儲存媒體。於該儲存部10c例如預先存放有複數種類之配方暨行程(schedule)製作程式及處理程式等各種的程式。運算部10a例如藉由讀入並執行被存放在儲存部10c之程式，來實現用以執行控制部10所進行之基板處理裝置100之動作之統括性之控制之各種功能性的構成。各種功能性的構成例如包含有製作對基板處理裝置100中複數片基板W之處理之行程的排程部及依照行程來執行對複數片基板W之處理的處理執行部等。The storage unit 10c can be, for example, a non-volatile storage medium that stores various information such as a hard disk or a flash memory. For example, various programs such as a plurality of types of recipes and schedule creation programs and processing programs are stored in advance in the storage unit 10c. The computing unit 10a realizes various functional configurations for executing the overall control of the operation of the substrate processing apparatus 100 performed by the control unit 10 by, for example, reading and executing the programs stored in the storage unit 10c. Various functional configurations include, for example, a scheduling unit that creates a schedule for processing a plurality of substrates W in the substrate processing apparatus 100 , a processing execution unit that executes processing for a plurality of substrates W according to the schedule, and the like.
計時器10d例如可計測各種時間。計時器10d亦可為由運算部10a所實現之功能性的構成。The timer 10d can measure various times, for example. The timer 10d may also be a functional configuration realized by the computing unit 10a.
控制部10例如亦可依據來自藥液處理部52之各種感測器部52s的計測結果，來控制第1液體處理部5及第2液體處理部6之各部分的動作。感測器部52s例如包含有後述之第1流量計M1、第2流量計M2、第3流量計M3及檢測部M4等。For example, the control unit 10 may control the operations of each part of the first liquid processing unit 5 and the second liquid processing unit 6 based on the measurement results from the various sensor units 52s of the chemical liquid processing unit 52 . The sensor unit 52s includes, for example, a first flow meter M1, a second flow meter M2, a third flow meter M3, a detection unit M4 and the like which will be described later.
＜1-2. 藥液處理部＞ 圖3係表示藥液處理部52之概略性構成的圖。該藥液處理部52例如為藉由使形成有氧化矽之膜及氮化矽之膜的基板W浸漬於作為蝕刻液而發揮功能之處理液的磷酸水溶液中，而進行選擇性地使氮化矽之膜溶解的處理(亦稱為蝕刻處理)之濕式蝕刻處理裝置。 ＜1-2. Chemical solution processing part＞ FIG. 3 is a diagram showing a schematic configuration of the chemical solution processing unit 52 . The chemical solution processing unit 52 selectively nitrides the substrate W formed with a silicon oxide film and a silicon nitride film, for example, by immersing the substrate W in an aqueous phosphoric acid solution that functions as an etching solution. Wet etching processing device for dissolving silicon film (also called etching processing).
如圖3所示，藥液處理部52具備有調整槽CB1、第1液體供給部SL1、第1液體循環部CL1、藥液處理槽CB2、第2液體供給部SL2、第2液體循環部CL2、液體排出部EL1及液體補充部AL1。As shown in FIG. 3 , the chemical solution processing unit 52 includes an adjustment tank CB1, a first liquid supply unit SL1, a first liquid circulation unit CL1, a chemical solution treatment tank CB2, a second liquid supply unit SL2, and a second liquid circulation unit CL2. , the liquid discharge part EL1 and the liquid replenishment part AL1.
調整槽CB1例如為用以進行用於供給至藥液處理槽CB2之磷酸水溶液之溫度等的調整者。調整槽CB1具有由第1內槽B1a與第1外槽B1b所構成之雙重構造，該第1內槽B1a貯存作為蝕刻液而發揮功能之處理液的磷酸水溶液，而該第1外槽B1b回收自該第1內槽B1a之上部溢流的磷酸水溶液。第1內槽B1a例如為由對於磷酸水溶液有優異之抗蝕性的石英或氟樹脂材料所形成且具有俯視時呈矩形之箱形形狀的構件。第1外槽B1b例如由與第1內槽B1a相同之材料所形成，且位在成為圍繞第1內槽B1a之外周上端部的位置。Adjustment tank CB1 is for adjusting the temperature etc. of the phosphoric acid aqueous solution supplied to chemical|chemical solution processing tank CB2, for example. The adjustment tank CB1 has a double structure consisting of a first inner tank B1a and a first outer tank B1b. The first inner tank B1a stores a phosphoric acid aqueous solution that functions as an etching solution, and the first outer tank B1b recovers Phosphoric acid aqueous solution overflowing from the upper part of this 1st inner tank B1a. The first inner tank B1a is formed of, for example, quartz or fluororesin material having excellent corrosion resistance against phosphoric acid aqueous solution, and has a rectangular box shape in plan view. The first outer groove B1b is formed of, for example, the same material as that of the first inner groove B1a, and is positioned so as to surround the outer peripheral upper end of the first inner groove B1a.
第1液體供給部SL1例如可執行將自處理液供給源En0所送來之新的處理液經由第1配管部Tb1供給至調整槽CB1之處理(亦稱為第1液體供給處理)。此處，例如供給作為蝕刻液而發揮功能之藥液即磷酸水溶液之新液(亦稱為使用前磷酸水溶液)，來作為處理液。處理液供給源En0以連通於第1配管部Tb1之第1端部之方式進行連接。該處理液供給源En0例如將磷酸水溶液藉由泵或氣體等，自被設置在基板處理裝置100內部或外部之以常溫(例如25℃)來貯存磷酸水溶液的槽朝向第1配管部Tb1加以壓送。於第1配管部Tb1設置有第1流量控制部Cf1。第1流量控制部Cf1例如具有開閉第1配管部Tb1之流路的第1閥V1、及計測磷酸水溶液之流量的第1流量計M1。第1配管部Tb1之第2端部例如以連通於調整槽CB1之第1外槽B1b之方式進行連接。於第1液體供給部SL1，例如自處理液供給源En0所供給之磷酸水溶液，通過第1配管部Tb1而以由第1流量控制部Cf1所設定之流量被供給至第1外槽B1b。For example, the first liquid supply unit SL1 can perform a process of supplying a new processing liquid sent from the processing liquid supply source En0 to the adjustment tank CB1 through the first piping portion Tb1 (also referred to as a first liquid supply process). Here, for example, a fresh solution of phosphoric acid aqueous solution (also called pre-use phosphoric acid aqueous solution) that functions as an etching solution is supplied as a treatment solution. The processing liquid supply source En0 is connected so as to communicate with the first end portion of the first piping portion Tb1. The processing liquid supply source En0 pressurizes the phosphoric acid aqueous solution from a tank for storing the phosphoric acid aqueous solution at room temperature (for example, 25° C.) provided inside or outside the substrate processing apparatus 100 toward the first piping portion Tb1 by using a pump or gas, for example. deliver. The 1st flow control part Cf1 is provided in 1st piping part Tb1. The 1st flow control part Cf1 has the 1st valve V1 which opens and closes the flow path of the 1st piping part Tb1, and the 1st flowmeter M1 which measures the flow rate of phosphoric acid aqueous solution, for example. The 2nd end part of 1st piping part Tb1 is connected so that it may communicate with 1st outer tank B1b of adjustment tank CB1, for example. In the first liquid supply part SL1, for example, the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 is supplied to the first outer tank B1b at the flow rate set by the first flow control part Cf1 through the first piping part Tb1.
第1液體循環部CL1例如可執行加熱自調整槽CB1所排出之磷酸水溶液並再次將其壓送環流至調整槽CB1之處理(亦稱為第1液體循環處理)。第1液體循環部CL1例如具有以連通第1外槽B1b與第1內槽B1a之方式進行連接之第2配管部Tb2。第2配管部Tb2例如具有以連通於第1外槽B1b之底部之方式進行連接的第1端部及以連通於第1內槽B1a之底部之方式進行連接的第2端部。於第2配管部Tb2，自上游側起依序地設置有第2閥V2、第1泵Pm1及第1加熱器Ht1。第2閥V2將第2配管部Tb2之流路加以開閉。第1泵Pm1將自第1外槽B1b抽出之磷酸水溶液經由第2配管部Tb2朝向第1內槽B1a加以壓送。第1加熱器Ht1將流動於第2配管部Tb2之磷酸水溶液加熱至既定溫度(例如約160℃)。又，第1液體循環部CL1例如亦可具有加熱自第1內槽B1a所排出之磷酸水溶液並將其環流至第1內槽B1a的第3配管部Tb3。例如，第3配管部Tb3可採用具有以連通於第1內槽B1a之方式進行連接的第1端部及以連通於第2配管部Tb2中第2閥V2與第1泵Pm1之間之部分之方式進行連接的第2端部之形態。此處，第3配管部Tb3以合流於第2配管部Tb2之形態設置。於第3配管部Tb3設置有第3閥V3，該第3閥V3將第3配管部Tb3之流路加以開閉。The 1st liquid circulation part CL1 can perform the process which heats the phosphoric acid aqueous solution discharged|emitted from the adjustment tank CB1, and press-feeds and circulates it to the adjustment tank CB1 again, for example (it is also called a 1st liquid circulation process). The 1st liquid circulation part CL1 has the 2nd piping part Tb2 connected so that the 1st outer tank B1b and the 1st inner tank B1a may communicate, for example. The 2nd piping part Tb2 has the 1st end part connected so that it may communicate with the bottom part of 1st outer tank B1b, and the 2nd end part connected so that it may communicate with the bottom part of 1st inner tank B1a, for example. In the 2nd piping part Tb2, the 2nd valve V2, the 1st pump Pm1, and the 1st heater Ht1 are provided in this order from an upstream side. The second valve V2 opens and closes the flow path of the second piping portion Tb2. The 1st pump Pm1 pressure-feeds the phosphoric acid aqueous solution extracted from the 1st outer tank B1b toward the 1st inner tank B1a through the 2nd piping part Tb2. The first heater Ht1 heats the phosphoric acid aqueous solution flowing in the second piping portion Tb2 to a predetermined temperature (for example, about 160° C.). Moreover, the 1st liquid circulation part CL1 may have the 3rd piping part Tb3 which heats the phosphoric acid aqueous solution discharged|emitted from the 1st inner tank B1a, and circulates it to the 1st inner tank B1a, for example. For example, the third piping portion Tb3 may have a first end connected to communicate with the first inner tank B1a and a portion communicating with the second valve V2 and the first pump Pm1 in the second piping portion Tb2. The form of the second end connected in the same way. Here, the 3rd piping part Tb3 is provided in the form merged with the 2nd piping part Tb2. The 3rd valve V3 which opens and closes the flow path of 3rd piping part Tb3 is provided in 3rd piping part Tb3.
藥液處理槽CB2例如為藉由作為蝕刻液而發揮功能之處理液之磷酸水溶液來進行對基板W之蝕刻處理的部分(亦稱為處理部)。藥液處理槽CB2例如與調整槽CB1同樣地具有由第2內槽B2a與第2外槽B2b所構成之雙重構造，該第2內槽B2a貯存作為蝕刻液之磷酸水溶液，並使基板W浸漬於磷酸水溶液中，而該第2外槽B2b回收自該第2內槽B2a之上部溢流之磷酸水溶液。第2內槽B2a例如與第1內槽B1a同樣地，為例如由對於磷酸水溶液具有優異之抗蝕性的石英或氟樹脂材料所形成之俯視時呈矩形之箱形形狀的構件。於藥液處理槽CB2可貯存之液體的總量(容量)，例如被設定為60公升左右。第2外槽B2b例如亦與第1外槽B1b同樣地，由與第2內槽B2a相同之材料所形成，且位在成為圍繞第2內槽B2a之外周上端部的位置。The chemical solution processing tank CB2 is, for example, a portion (also referred to as a processing section) for etching the substrate W with an aqueous phosphoric acid solution that functions as an etching solution. The chemical solution processing tank CB2 has, for example, a double structure consisting of a second inner tank B2a and a second outer tank B2b similarly to the adjustment tank CB1. The second inner tank B2a stores an aqueous phosphoric acid solution as an etching solution, and immerses the substrate W in it. In the aqueous phosphoric acid solution, the second outer tank B2b recovers the phosphoric acid aqueous solution overflowing from the top of the second inner tank B2a. The second inner tank B2a is, for example, similar to the first inner tank B1a, and is formed of, for example, quartz or fluororesin material having excellent corrosion resistance against phosphoric acid aqueous solution, and has a rectangular box shape in plan view. The total amount (capacity) of the liquid that can be stored in the chemical liquid processing tank CB2 is set to, for example, about 60 liters. For example, the second outer groove B2b is also formed of the same material as the second inner groove B2a similarly to the first outer groove B1b, and is positioned to surround the outer peripheral upper end of the second inner groove B2a.
又，於藥液處理槽CB2設置有用以使基板W浸漬於被貯存在藥液處理槽CB2之磷酸水溶液的升降機LF2。升降機LF2例如藉由3根保持棒將以立起姿勢(基板主面之法線沿著水平方向的姿勢)相互地被平行地排列之複數片(例如50片)基板W一併地加以保持。升降機LF2被設置為可藉由省略圖示之升降機構而沿著鉛直方向進行升降。該升降機LF2例如使所保持之複數片基板W，在使其浸漬於第2內槽B2a內之磷酸水溶液中的處理位置(圖3之位置)、與自磷酸水溶液拉起之交接位置之間升降。在藥液處理槽CB2中，例如藉由使複數片基板W位在第2內槽B2a內之處理位置而使其浸漬在磷酸水溶液中，而可藉由磷酸水溶液來進行使基板W之氮化矽之膜溶解的蝕刻處理。此時，作為構成基板W之成分(亦稱為基板成分)的矽，自基板W溶出至被貯存在第2內槽B2a之磷酸水溶液。Moreover, the elevator LF2 for immersing the board|substrate W in the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2 is provided in the chemical solution processing tank CB2. The lifter LF2 collectively holds a plurality of (for example, 50) substrates W arranged parallel to each other in an upright posture (a posture in which the normal line of the main surface of the substrate is along the horizontal direction) by three holding rods, for example. The elevator LF2 is provided so as to be able to ascend and descend in the vertical direction by an elevator mechanism not shown in the figure. The elevator LF2, for example, lifts and lowers the plurality of substrates W held between the processing position (position shown in FIG. 3 ) where they are immersed in the phosphoric acid aqueous solution in the second inner tank B2a, and the transfer position where they are pulled up from the phosphoric acid aqueous solution. . In the chemical treatment tank CB2, for example, by immersing a plurality of substrates W in a phosphoric acid aqueous solution at the processing position in the second inner tank B2a, the substrate W can be nitrided by the phosphoric acid aqueous solution. Etching treatment for silicon film dissolution. At this time, silicon, which is a component constituting the substrate W (also referred to as a substrate component), is eluted from the substrate W into the phosphoric acid aqueous solution stored in the second inner tank B2a.
第2液體供給部SL2例如可執行將作為處理液之使用前磷酸水溶液供給至作為處理部之藥液處理槽CB2的處理(亦稱為第2液體供給處理)，該處理液作為蝕刻液而發揮功能。該第2液體供給部SL2例如具有作為液體供給管部之第4配管部Tb4，可將自調整槽CB1所送來之磷酸水溶液經由第4配管部Tb4供給至藥液處理槽CB2。第4配管部Tb4例如具有以連通於第2配管部Tb2之第1加熱器Ht1與調整槽CB1之間的部分之方式進行連接的第1端部及以連通於第2外槽B2b之方式進行連接的第2端部。換言之，第4配管部Tb4為第2配管部Tb2所分支之配管部。在第4配管部Tb4中，例如磷酸水溶液藉由第1泵Pm1自第1端部朝向第2端部被壓送。於第4配管部Tb4設置有第2流量控制部Cf2。第2流量控制部Cf2例如具有將磷酸水溶液之流路加以開閉的第4閥V4、及計測磷酸水溶液之流量的第2流量計M2。在第2液體供給部SL2中，例如自調整槽CB1所供給之磷酸水溶液通過第4配管部Tb4而以由第2流量控制部Cf2所設定之流量被供給至第2外槽B2b。The second liquid supply part SL2 can perform, for example, a process of supplying a pre-use phosphoric acid aqueous solution as a processing liquid to the chemical liquid treatment tank CB2 as a processing part (also referred to as a second liquid supply process), and the processing liquid functions as an etching liquid. Function. The second liquid supply part SL2 has, for example, a fourth piping part Tb4 as a liquid supply pipe part, and can supply the phosphoric acid aqueous solution sent from the adjustment tank CB1 to the chemical solution processing tank CB2 through the fourth piping part Tb4. The fourth piping portion Tb4 has, for example, a first end connected to communicate with a portion between the first heater Ht1 of the second piping portion Tb2 and the adjustment tank CB1, and communicates with the second outer tank B2b. The 2nd end of the connection. In other words, the 4th piping part Tb4 is a piping part which the 2nd piping part Tb2 branches off. In the 4th piping part Tb4, for example, phosphoric acid aqueous solution is pressure-fed from a 1st end part toward a 2nd end part by a 1st pump Pm1. The 2nd flow control part Cf2 is provided in the 4th piping part Tb4. The 2nd flow rate control part Cf2 has the 4th valve V4 which opens and closes the flow path of phosphoric acid aqueous solution, and the 2nd flowmeter M2 which measures the flow rate of phosphoric acid aqueous solution, for example. In the second liquid supply part SL2, for example, the phosphoric acid aqueous solution supplied from the adjustment tank CB1 is supplied to the second outer tank B2b at the flow rate set by the second flow control part Cf2 through the fourth piping part Tb4.
第2液體循環部CL2例如可執行加熱自藥液處理槽CB2所排出之磷酸水溶液並再次將其壓送環流至藥液處理槽CB2之處理(亦稱為第2液體循環處理)。第2液體循環部CL2例如具有以將第2外槽B2b與第2內槽B2a加以連通之方式進行連接之第5配管部Tb5。例如，第5配管部Tb5具有以連通於第2外槽B2b之底部之方式進行連接的第1端部、及以連通於第2內槽B2a之底部之方式進行連接的第2端部。於第5配管部Tb5，自上游側起依序設置有第5閥V5、第2泵Pm2、第6閥V6、第2加熱器Ht2及過濾器Fl1。第5閥V5將第5配管部Tb5之流路加以開閉。第2泵Pm2經由第5配管部Tb5將自第2外槽B2b所抽出之磷酸水溶液朝向第2內槽B2a壓送。第6閥V6將第5配管部Tb5之流路加以開閉。第2加熱器Ht2將流動於第5配管部Tb5之磷酸水溶液加熱至既定溫度(例如約160℃)。過濾器Fl1係用於去除流動於第5配管部Tb5之磷酸水溶液中之異物的濾過用過濾器。又，第2液體循環部CL2例如亦可具有加熱自第2內槽B2a所排出之磷酸水溶液並將其環流至第2內槽B2a的第6配管部Tb6。於該情形時，例如，第6配管部Tb6可採用具有以連通於第2內槽B2a之方式進行連接的第1端部、及以連通於第5配管部Tb5中之第5閥V5與第2泵Pm2之間之部分之方式進行連接的第2端部之形態。於第6配管部Tb6設置有第7閥V7，該第7閥V7將第6配管部Tb6之流路加以開閉。The second liquid circulation part CL2 can perform, for example, a process of heating the phosphoric acid aqueous solution discharged from the chemical solution treatment tank CB2 and recirculating it to the chemical solution treatment tank CB2 (also referred to as a second liquid circulation process). The 2nd liquid circulation part CL2 has the 5th piping part Tb5 connected so that the 2nd outer tank B2b may communicate with the 2nd inner tank B2a, for example. For example, the fifth piping portion Tb5 has a first end connected to the bottom of the second outer tank B2b and a second end connected to the bottom of the second inner tank B2a. In the 5th piping part Tb5, the 5th valve V5, the 2nd pump Pm2, the 6th valve V6, the 2nd heater Ht2, and the filter Fl1 are provided in this order from an upstream side. The fifth valve V5 opens and closes the flow path of the fifth piping portion Tb5. The 2nd pump Pm2 pressure-feeds the phosphoric acid aqueous solution extracted from the 2nd outer tank B2b toward the 2nd inner tank B2a through the 5th piping part Tb5. The sixth valve V6 opens and closes the flow path of the fifth piping portion Tb5. The 2nd heater Ht2 heats the phosphoric acid aqueous solution flowing in the 5th piping part Tb5 to predetermined temperature (for example, about 160 degreeC). The filter F11 is a filter for filtering to remove foreign matter in the phosphoric acid aqueous solution flowing in the fifth piping part Tb5. Moreover, the 2nd liquid circulation part CL2 may have the 6th piping part Tb6 which heats the phosphoric acid aqueous solution discharged|emitted from the 2nd inner tank B2a, and circulates it to the 2nd inner tank B2a, for example. In this case, for example, the sixth piping portion Tb6 may have a first end connected to communicate with the second inner tank B2a, and a fifth valve V5 and a fifth valve V5 communicating with the fifth piping portion Tb5. The form of the 2nd end part which connects the part between 2 pumps Pm2. The 7th valve V7 which opens and closes the flow path of 6th piping part Tb6 is provided in 6th piping part Tb6.
液體排出部EL1例如為執行將於作為處理部之藥液處理槽CB2中被使用在對基板W之蝕刻處理後之作為處理液(亦稱為第1處理液)的磷酸水溶液(亦稱為使用完畢磷酸水溶液，也稱為第1磷酸水溶液)自藥液處理槽CB2排出至基板處理裝置100外之處理(亦稱為液體排出處理)的部分。使用完畢磷酸水溶液因藥液處理槽CB2中基板W的蝕刻處理，而處於基板成分(例如矽)溶解之濃度(亦稱為溶解濃度)較使用前之磷酸水溶液更高之狀態。液體排出部EL1例如具有第7配管部Tb7、第8配管部Tb8、冷卻箱Ct1及第9配管部Tb9。此處，第7配管部Tb7、第8配管部Tb8及第9配管部Tb9構成用以將使用完畢磷酸水溶液自藥液處理槽CB2排出至基板處理裝置100外的部分(亦稱為液體排出管部)Tg1。The liquid discharge part EL1 is, for example, a phosphoric acid aqueous solution (also referred to as the use The finished phosphoric acid aqueous solution (also referred to as the first phosphoric acid aqueous solution) is discharged from the chemical solution processing tank CB2 to the part of the processing (also referred to as liquid discharge processing) outside the substrate processing apparatus 100 . Due to the etching process of the substrate W in the chemical solution treatment tank CB2, the used phosphoric acid aqueous solution has a higher dissolved concentration (also referred to as a dissolved concentration) of substrate components (such as silicon) than the phosphoric acid aqueous solution before use. The liquid discharge part EL1 has the 7th piping part Tb7, the 8th piping part Tb8, the cooling tank Ct1, and the 9th piping part Tb9, for example. Here, the seventh piping portion Tb7, the eighth piping portion Tb8, and the ninth piping portion Tb9 constitute a portion for discharging the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the outside of the substrate processing apparatus 100 (also referred to as a liquid discharge pipe). part) Tg1.
第7配管部Tb7例如具有以連通於第5配管部Tb5中之第2泵Pm2與第6閥V6之間的部分之方式進行連接的第1端部、及以連通於冷卻箱Ct1之方式進行連接的第2端部。換言之，第7配管部Tb7與第5配管部Tb5一起構成連接藥液處理槽CB2與冷卻箱Ct1之部分(亦稱為第1部分)。於第7配管部Tb7設置有第8閥V8。第8閥V8將第7配管部Tb7之流路加以開閉。因此，藉由適當控制第6閥V6及第8閥V8之開閉，可選擇性地執行加熱自藥液處理槽CB2所排出之磷酸水溶液並再次壓送環流至藥液處理槽CB2之處理(第2液體循環處理)、及將使用完畢磷酸水溶液自藥液處理槽CB2經由冷卻箱Ct1排出至基板處理裝置100外之處理(液體排出處理)。The seventh piping portion Tb7 has, for example, a first end connected so as to communicate with a portion between the second pump Pm2 and the sixth valve V6 in the fifth piping portion Tb5, and a first end portion so as to communicate with the cooling tank Ct1. The 2nd end of the connection. In other words, the 7th piping part Tb7 and the 5th piping part Tb5 comprise the part (also called a 1st part) which connects the chemical liquid processing tank CB2 and the cooling tank Ct1 together. The 8th valve V8 is provided in the 7th piping part Tb7. The eighth valve V8 opens and closes the flow path of the seventh piping portion Tb7. Therefore, by appropriately controlling the opening and closing of the sixth valve V6 and the eighth valve V8, the treatment of heating the phosphoric acid aqueous solution discharged from the chemical solution treatment tank CB2 and then pressure-feeding and circulating it to the chemical solution treatment tank CB2 can be selectively performed (No. 2 liquid circulation process), and the process of discharging the used phosphoric acid aqueous solution from the chemical liquid treatment tank CB2 to the outside of the substrate processing apparatus 100 through the cooling box Ct1 (liquid discharge process).
第8配管部Tb8例如具有以連通於藥液處理槽CB2之第2外槽B2b的上部之方式進行連接的第1端部、及以連通於冷卻箱Ct1之方式進行連接的第2端部。換言之，第8配管部Tb8構成連接藥液處理槽CB2與冷卻箱Ct1之部分(亦稱為第1部分)。此處，第8配管部Tb8例如可於被貯存在藥液處理槽CB2之第2外槽B2b之磷酸水溶液的貯存量過度增加時，以磷酸水溶液不會自第2外槽B2b溢出之方式使磷酸水溶液自第2外槽B2b流至冷卻箱Ct1。又，亦可設置例如可於被貯存在調整槽CB1之第1外槽B1b之磷酸水溶液的貯存量過度增加時，以磷酸水溶液不會自第1外槽B1b溢出之方式使磷酸水溶液自第1外槽B1b流至冷卻箱Ct1之第10配管部Tb10。於該情形時，第10配管部Tb10具有以連通於調整槽CB1之第1外槽B1b的上部之方式進行連接的第1端部、及以如合流於第8配管部Tb8般之形態連通之方式進行連接的第2端部。The eighth piping portion Tb8 has, for example, a first end connected to the upper portion of the second outer tank B2b of the chemical treatment tank CB2, and a second end connected to the cooling tank Ct1. In other words, the eighth piping portion Tb8 constitutes a portion (also referred to as a first portion) that connects the chemical solution processing tank CB2 and the cooling tank Ct1. Here, the eighth piping portion Tb8 can be used so that the phosphoric acid aqueous solution does not overflow from the second outer tank B2b when, for example, the storage amount of the phosphoric acid aqueous solution stored in the second outer tank B2b of the chemical treatment tank CB2 increases excessively. The phosphoric acid aqueous solution flows into the cooling tank Ct1 from the second outer tank B2b. Also can be set, for example, when the storage amount of the phosphoric acid aqueous solution stored in the first outer tank B1b of the adjustment tank CB1 is excessively increased, the phosphoric acid aqueous solution can flow from the first outer tank B1b in such a way that the phosphoric acid aqueous solution will not overflow from the first outer tank B1b. The outer tank B1b flows to the tenth piping part Tb10 of the cooling tank Ct1. In this case, the 10th piping part Tb10 has the 1st end part connected so that it may connect with the upper part of the 1st outer tank B1b of the adjustment tank CB1, and the 1st end part connected so that it may merge with the 8th piping part Tb8. way to connect the 2nd end.
冷卻箱Ct1可貯存並冷卻使用完畢磷酸水溶液。於冷卻箱Ct1設置有用以檢測被貯存在該冷卻箱Ct1之液體之貯存量的檢測部M4。檢測部M4例如可應用液面計等。The cooling box Ct1 can store and cool the used phosphoric acid aqueous solution. The detection part M4 for detecting the storage amount of the liquid stored in this cooling box Ct1 is provided in cooling box Ct1. As the detection unit M4, for example, a liquid level gauge or the like can be applied.
第9配管部Tb9例如連接於冷卻箱Ct1，而構成用以將使用完畢磷酸水溶液排出至基板處理裝置100外之部分(亦稱為第2部分)。第9配管部Tb9例如具有連接於冷卻箱Ct1的第1端部、及連接於用以將使用完畢之磷酸水溶液輸出至基板處理裝置100外之部分(亦稱為處理液輸出部)Ex0的第2端部。處理液輸出部Ex0例如可應用可相對於基板處理裝置100進行裝卸之用以回收磷酸水溶液的箱(亦稱為回收箱)或用以廢棄磷酸水溶液的桶(亦稱為排液桶)、或者用以連接於工廠排水用之處理設施的排液管等。於第9配管部Tb9例如設置有第9閥V9。第9閥V9可將第9配管部Tb9之流路加以開閉。此處，磷酸水溶液自冷卻箱Ct1朝向處理液輸出部Ex0之輸出可藉由第9閥V9所調整。The ninth piping part Tb9 is connected to the cooling tank Ct1, for example, and constitutes a part (also referred to as a second part) for discharging the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100 . The ninth piping part Tb9 has, for example, a first end connected to the cooling box Ct1 and a first end connected to a part (also referred to as a processing liquid output part) Ex0 for outputting the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100. 2 ends. The processing liquid output part Ex0 can use, for example, a tank for recovering the phosphoric acid aqueous solution (also called a recovery tank) or a bucket for discarding the phosphoric acid aqueous solution (also called a drain tank) that can be loaded and unloaded with respect to the substrate processing apparatus 100, or Drain pipes, etc. used to connect to treatment facilities for factory drainage. For example, a ninth valve V9 is provided in the ninth piping portion Tb9. The ninth valve V9 can open and close the flow path of the ninth piping portion Tb9. Here, the output of the phosphoric acid aqueous solution from the cooling tank Ct1 to the processing liquid output part Ex0 can be adjusted by the ninth valve V9.
液體補充部AL1例如可執行將作為第2處理液之使用前磷酸水溶液(亦稱為第2磷酸水溶液)自處理液供給源En0補充至液體排出部EL1之處理(亦稱為液體補充處理)。藉此，可將作為第1處理液之使用完畢磷酸水溶液與作為第2處理液之使用前磷酸水溶液加以混合，而生成作為混合溶液之磷酸水溶液(亦稱為混合磷酸水溶液)。此處，使用前磷酸水溶液處於基板成分(例如矽)之溶解濃度較使用完畢磷酸水溶液更低之狀態。因此，混合磷酸水溶液成為基板成分(例如矽)之溶解濃度較使用完畢磷酸水溶液更低之狀態。換言之，藉由使用前磷酸水溶液利用液體補充部AL1而被補充至液體排出部EL1，可將液體排出部EL1中排出之使用完畢磷酸水溶液作為已減低基板成分之溶解濃度的混合磷酸水溶液，而自冷卻箱Ct1經由第9配管部Tb9輸送至處理液輸出部Ex0。液體補充部AL1例如具有被連接於液體排出部EL1之作為液體補充管部之第11配管部Tb11。第11配管部Tb11例如具有被連接於處理液供給源En0之第1端部、及以如合流於第8配管部Tb8般之形態連通之方式被連接之第2端部。於第11配管部Tb11設置有第3流量控制部Cf3。第3流量控制部Cf3例如具有將第11配管部Tb11之流路加以開閉的第10閥V10、及計測磷酸水溶液之流量的第3流量計M3。The liquid replenishment unit AL1 can execute, for example, a process of replenishing the pre-use phosphoric acid aqueous solution (also referred to as the second phosphoric acid aqueous solution) as the second treatment liquid from the treatment liquid supply source En0 to the liquid discharge unit EL1 (also referred to as liquid replenishment process). Thereby, the used phosphoric acid aqueous solution as the first treatment liquid and the pre-used phosphoric acid aqueous solution as the second treatment liquid can be mixed to generate a phosphoric acid aqueous solution (also called a mixed phosphoric acid aqueous solution) as a mixed solution. Here, the phosphoric acid aqueous solution before use is in a state where the dissolved concentration of substrate components (for example, silicon) is lower than that of the phosphoric acid aqueous solution after use. Therefore, the mixed phosphoric acid aqueous solution is in a state in which the dissolved concentration of substrate components (such as silicon) is lower than that of the used phosphoric acid aqueous solution. In other words, since the phosphoric acid aqueous solution before use is replenished to the liquid discharge portion EL1 by the liquid replenishment portion AL1, the used phosphoric acid aqueous solution discharged from the liquid discharge portion EL1 can be used as a mixed phosphoric acid aqueous solution having reduced the dissolved concentration of the substrate components, and automatically The cooling tank Ct1 is sent to the processing liquid output part Ex0 through the 9th piping part Tb9. Liquid replenishment part AL1 has 11th piping part Tb11 as a liquid replenishment pipe part connected to liquid discharge part EL1, for example. The eleventh piping part Tb11 has, for example, a first end connected to the processing liquid supply source En0 and a second end connected so as to be connected to the eighth piping part Tb8. The 3rd flow control part Cf3 is provided in the 11th piping part Tb11. The 3rd flow control part Cf3 has the 10th valve V10 which opens and closes the flow path of the 11th piping part Tb11, and the 3rd flowmeter M3 which measures the flow rate of phosphoric acid aqueous solution, for example.
上述之藥液處理部52之各部分的動作，可由控制部10進行控制。例如，可根據控制部10來控制：藉由第1液體供給部SL1將作為第2處理液之使用前磷酸水溶液朝向調整槽CB1進行供給之處理(第1液體供給處理)、藉由第1液體循環部CL1使磷酸水溶液循環之處理(第1液體循環處理)、藉由第2液體供給部SL2將使用前磷酸水溶液朝向藥液處理槽CB2供給之處理(第2液體供給處理)、藉由第2液體循環部CL2使磷酸水溶液循環之處理(第2液體循環處理)、藉由液體排出部EL1將作為第1處理液之使用完畢磷酸水溶液自藥液處理槽CB2排出之處理(液體排出處理)、及藉由液體補充部AL1將作為第2處理液之使用前磷酸水溶液朝向液體排出部EL1進行補充之處理(液體補充處理)。The operation of each part of the above-mentioned chemical solution processing unit 52 can be controlled by the control unit 10 . For example, it can be controlled by the control unit 10: the process of supplying the unused phosphoric acid aqueous solution as the second treatment liquid toward the adjustment tank CB1 by the first liquid supply unit SL1 (the first liquid supply process), the process of supplying the phosphoric acid solution by the first liquid The circulation unit CL1 circulates the phosphoric acid aqueous solution (the first liquid circulation process), supplies the pre-use phosphoric acid aqueous solution to the chemical treatment tank CB2 by the second liquid supply unit SL2 (the second liquid supply process), and 2 Process of circulating phosphoric acid aqueous solution by liquid circulation unit CL2 (second liquid circulation process), process of discharging the used phosphoric acid aqueous solution as the first treatment liquid from chemical solution treatment tank CB2 by liquid discharge unit EL1 (liquid discharge process) , and a process of replenishing the phosphoric acid aqueous solution before use as the second processing liquid toward the liquid discharge part EL1 by the liquid replenishment part AL1 (liquid replenishment process).
再者，例如亦可以沿著第2內槽B2a之內壁之方式所設置之濃度計對溶出至被貯存在第2內槽B2a內之磷酸水溶液中之基板W之特定物質的溶解濃度進行檢測，並依據作為該檢測結果之溶解濃度，控制部10將第8閥V8及第9閥V9加以開閉，而適當地將使用完畢磷酸水溶液送出至處理液輸出部Ex0。Furthermore, for example, a concentration meter installed along the inner wall of the second inner tank B2a can also be used to detect the dissolved concentration of the specific substance of the substrate W eluted into the phosphoric acid aqueous solution stored in the second inner tank B2a. , and according to the dissolved concentration as the detection result, the control part 10 opens and closes the eighth valve V8 and the ninth valve V9, and appropriately sends the used phosphoric acid aqueous solution to the processing liquid output part Ex0.
在具有上述構成之基板處理裝置100中，例如可於將作為第1處理液之使用完畢磷酸水溶液自作為處理部之藥液處理槽CB2排出至基板處理裝置100外時，將基板成分(例如矽)之溶解濃度相對較低之作為第2處理液之使用前磷酸水溶液混合於作為該第1處理液之使用完畢磷酸水溶液並加以排出。藉此，例如即便作為第1處理液之使用完畢磷酸水溶液由冷卻箱Ct1所冷卻，仍可於將作為處理液之磷酸水溶液自作為處理部之藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，使作為處理液之磷酸水溶液中來自基板W的溶出成分之結晶化(例如矽氧烷之結晶化)難以發生。In the substrate processing apparatus 100 having the above-mentioned structure, for example, when the used phosphoric acid aqueous solution as the first processing liquid is discharged from the chemical solution processing tank CB2 as the processing part to the outside of the substrate processing apparatus 100, the substrate components (such as silicon ) is mixed with the used phosphoric acid aqueous solution as the first treatment solution and discharged with a relatively low dissolved concentration of the second treatment solution. Thereby, for example, even if the used phosphoric acid aqueous solution as the first processing liquid is cooled by the cooling box Ct1, the phosphoric acid aqueous solution as the processing liquid can be discharged from the chemical solution processing tank CB2 as the processing part toward the outside of the substrate processing apparatus 100. In the route, the crystallization of the eluted components from the substrate W in the phosphoric acid aqueous solution (eg, crystallization of siloxane) hardly occurs.
又，在基板處理裝置100中，利用液體補充部AL1，藉由將作為第2處理液之使用前磷酸水溶液混合於作為第1處理液之使用完畢磷酸水溶液所生成之作為混合溶液之混合磷酸水溶液，可成為具有未達基板成分(例如矽)之溶解度的溶解濃度。如此之濃度的設計，例如可根據使用完畢磷酸水溶液之基板成分之溶解濃度的預測值或實測值、及第1處理液與第2處理液之混合比而得以實現。In addition, in the substrate processing apparatus 100, the mixed phosphoric acid aqueous solution as a mixed solution generated by mixing the unused phosphoric acid aqueous solution as the second processing liquid with the used phosphoric acid aqueous solution as the first processing liquid is produced by using the liquid replenishing part AL1. , may have a dissolved concentration that does not reach the solubility of the substrate component (eg, silicon). Designing such a concentration can be realized based on, for example, the predicted or measured value of the dissolved concentration of the substrate component in the used phosphoric acid aqueous solution and the mixing ratio of the first treatment liquid and the second treatment liquid.
＜1-3. 基板處理裝置之動作＞ 其次，對具有上述之構成之基板處理裝置100的動作進行說明。 <1-3. Operation of substrate processing equipment> Next, the operation of the substrate processing apparatus 100 having the above-mentioned configuration will be described.
＜1-3-1. 蝕刻處理之動作流程＞ 圖4係表示基板處理裝置100中基板W之蝕刻處理之動作流程之一例的流程圖。本動作流程例如藉由控制部10依據操作人員所指定之配方來控制基板處理裝置100之各部分的動作而得以實現。此處，列舉藉由將形成有氧化矽之膜及氮化矽之膜的基板W浸漬於作為處理液之磷酸水溶液，而進行由磷酸水溶液選擇性地溶解氮化矽之膜的蝕刻處理為例來進行說明。 ＜1-3-1. Operation flow of etching process＞ FIG. 4 is a flowchart showing an example of an operation flow of the etching process of the substrate W in the substrate processing apparatus 100 . This operation flow is realized, for example, by the control unit 10 controlling the operations of various parts of the substrate processing apparatus 100 according to the recipe specified by the operator. Here, an example of an etching process in which a silicon nitride film is selectively dissolved in a phosphoric acid aqueous solution is performed by immersing the substrate W formed with a silicon oxide film and a silicon nitride film in an aqueous phosphoric acid solution as a treatment solution. to explain.
於在基板處理裝置100中進行基板W之蝕刻處理的情形時，例如如圖4所示般，執行依前處理(步驟S1)、主處理(步驟S2)、後處理(步驟S3)之記載順序所執行之1個循環的處理(亦稱為循環處理)。When performing the etching process of the substrate W in the substrate processing apparatus 100, for example, as shown in FIG. 1-cycle processing executed (also called cyclic processing).
＜1-3-1-1. 前處理之動作＞ 在前處理(步驟S1)中，例如於使複數片基板W浸漬於被貯存在藥液處理槽CB2之磷酸水溶液之前，以藉由磷酸水溶液對藥液處理槽CB2之供給等使磷酸水溶液成為適於蝕刻處理之活性狀態之方式進行準備。再者，在前處理中，例如亦可藉由省略圖示之導入氣泡的構成來對被貯存在藥液處理槽CB2之磷酸水溶液實施起泡處理。 ＜1-3-1-1. Pre-processing actions＞ In the pretreatment (step S1), for example, before immersing the plurality of substrates W in the phosphoric acid aqueous solution stored in the chemical treatment tank CB2, the phosphoric acid aqueous solution is made suitable by supplying the phosphoric acid aqueous solution to the chemical treatment tank CB2, etc. Preparation is done in the active state of the etch process. In addition, in the pretreatment, for example, the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2 may be subjected to a bubbling treatment by using a structure in which bubbles are not shown in the figure.
在前處理中，例如第2液體供給部SL2將使用前磷酸水溶液供給至藥液處理槽CB2。此時，例如藥液處理槽CB2依據來自第2液體供給部SL2之使用前磷酸水溶液的供給，將使用完畢磷酸水溶液排出至液體排出部EL1。此處，例如若由第2液體供給部SL2所進行之使用前磷酸水溶液朝向藥液處理槽CB2之供給量與使用完畢磷酸水溶液自藥液處理槽CB2朝向液體排出部EL1之排出量相等，磷酸水溶液便不會自藥液處理槽CB2溢出。此處，例如既可藉由第5閥V5及第8閥V8所進行之第5配管部Tb5及第7配管部Tb7之流路的開放，使用完畢磷酸水溶液自藥液處理槽CB2經由第5配管部Tb5及第7配管部Tb7朝向冷卻箱Ct1被排出，亦可使用完畢磷酸水溶液自藥液處理槽CB2經由第8配管部Tb8朝向冷卻箱Ct1被排出。又，此時，例如液體補充部AL1藉由將使用前磷酸水溶液補充至液體排出部EL1，而於液體排出部EL1中將使用前磷酸水溶液混合於使用完畢磷酸水溶液，藉此生成混合磷酸水溶液。此處，例如於冷卻箱Ct1中生成有混合磷酸水溶液。該混合磷酸水溶液例如藉由第9閥V9所進行之第9配管部Tb9之流路的開放，自冷卻箱Ct1經由第9配管部Tb9而朝向處理液輸出部Ex0被輸送。In the pretreatment, for example, the second liquid supply part SL2 supplies the pre-use phosphoric acid aqueous solution to the chemical solution treatment tank CB2. At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 based on the supply of the pre-use phosphoric acid aqueous solution from the second liquid supply part SL2. Here, for example, if the supply amount of the pre-use phosphoric acid aqueous solution to the chemical treatment tank CB2 from the second liquid supply part SL2 is equal to the discharge amount of the used phosphoric acid aqueous solution from the chemical treatment tank CB2 to the liquid discharge part EL1, the phosphoric acid The aqueous solution will not overflow from the chemical solution treatment tank CB2. Here, for example, by opening the channels of the fifth piping portion Tb5 and the seventh piping portion Tb7 through the fifth valve V5 and the eighth valve V8, the used phosphoric acid aqueous solution passes through the fifth piping portion Tb2 from the chemical solution treatment tank CB2. The piping part Tb5 and the seventh piping part Tb7 are discharged toward the cooling tank Ct1, and the used phosphoric acid aqueous solution may be discharged from the chemical solution treatment tank CB2 toward the cooling tank Ct1 through the eighth piping part Tb8. Also, at this time, for example, the liquid replenishment unit AL1 supplies the unused phosphoric acid aqueous solution to the liquid discharge unit EL1, and mixes the unused phosphoric acid aqueous solution with the used phosphoric acid aqueous solution in the liquid discharge unit EL1 to generate a mixed phosphoric acid aqueous solution. Here, for example, a mixed phosphoric acid aqueous solution is generated in the cooling tank Ct1. The mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the processing liquid output part Ex0 through the ninth piping part Tb9 by, for example, opening the flow path of the ninth piping part Tb9 by the ninth valve V9.
換言之，在前處理中，進行液體供給步驟、液體排出步驟、及液體補充步驟。液體供給步驟例如包含經由作為液體供給部之第4配管部Tb4將磷酸水溶液供給至藥液處理槽CB2之步驟。液體排出步驟例如包含將在蝕刻步驟所使用後的使用完畢磷酸水溶液自藥液處理槽CB2經由液體排出管部Tg1排出至基板處理裝置100外之步驟。此時，例如藥液處理槽CB2依據經由第4配管部Tb4之使用前磷酸水溶液之供給，將使用完畢磷酸水溶液排出至液體排出部EL1。液體補充步驟例如包含將基板成分之溶解濃度較使用完畢磷酸水溶液更低之使用前磷酸水溶液，經由作為液體補充管部之第11配管部Tb11而補充至液體排出部EL1，藉此將使用完畢磷酸水溶液與使用前磷酸水溶液混合而生成作為混合溶液之混合磷酸水溶液的處理。藉此，例如即便於前處理中，仍可於將使用完畢磷酸水溶液自藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，使用完畢磷酸水溶液中來自基板W的溶出成分之結晶化(例如矽氧烷之結晶化)難以發生。In other words, in the preprocessing, a liquid supply step, a liquid discharge step, and a liquid replenishment step are performed. The liquid supply step includes, for example, a step of supplying the phosphoric acid aqueous solution to the chemical solution treatment tank CB2 through the fourth piping portion Tb4 as the liquid supply portion. The liquid discharge step includes, for example, a step of discharging the used phosphoric acid aqueous solution used in the etching step from the chemical solution treatment tank CB2 to the outside of the substrate processing apparatus 100 through the liquid discharge pipe Tg1 . At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 according to the supply of the pre-use phosphoric acid aqueous solution via the 4th piping part Tb4. The liquid replenishment step includes, for example, replenishing the pre-used phosphoric acid aqueous solution having a lower dissolved concentration of the substrate components than the used phosphoric acid aqueous solution to the liquid discharge part EL1 through the eleventh piping part Tb11 serving as the liquid replenishing pipe part, whereby the used phosphoric acid is replenished. A process of mixing an aqueous solution with an aqueous phosphoric acid solution before use to produce a mixed aqueous phosphoric acid solution as a mixed solution. Thereby, for example, even during the pretreatment, the crystallization of the eluted components from the substrate W in the used phosphoric acid aqueous solution can still be carried out in the path of discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 toward the outside of the substrate processing apparatus 100 ( For example, the crystallization of siloxane) is difficult to occur.
在主處理(步驟S2)前之前處理(步驟S1)中，例如於液體供給步驟中，既可經由第4配管部Tb4對藥液處理槽CB2供給一次磷酸水溶液，亦可將磷酸水溶液分為複數次進行供給。換言之，於液體供給步驟中，例如亦可藉由第2液體供給部SL2將磷酸水溶液經由第4配管部Tb4供給至少一次至藥液處理槽CB2。又，例如於液體排出步驟中，既可將使用完畢磷酸水溶液自藥液處理槽CB2經由液體排出管部Tg1排出一次至基板處理裝置100外，亦可將使用完畢磷酸水溶液分為複數次加以排出。換言之，於液體排出步驟中，例如亦可藉由液體排出部EL1將使用完畢磷酸水溶液自藥液處理槽CB2經由液體排出管部Tg1排出至少一次至基板處理裝置100外。又，例如於液體補充步驟中，既可將使用前磷酸水溶液經由第11配管部Tb11補充一次至液體排出部EL1，亦可將使用前磷酸水溶液分為複數次進行補充。換言之，於液體補充步驟中，例如亦可藉由液體補充部AL1將使用前磷酸水溶液經由第11配管部Tb11補充至少一次至液體排出部EL1。In the pretreatment (step S1) before the main treatment (step S2), for example, in the liquid supply step, the primary phosphoric acid aqueous solution may be supplied to the chemical solution treatment tank CB2 through the fourth piping part Tb4, or the phosphoric acid aqueous solution may be divided into plural parts. times to supply. In other words, in the liquid supply step, for example, the phosphoric acid aqueous solution may be supplied to the chemical solution treatment tank CB2 at least once by the second liquid supply part SL2 through the fourth piping part Tb4. Also, for example, in the liquid discharge step, the used phosphoric acid aqueous solution may be discharged once from the chemical solution treatment tank CB2 through the liquid discharge pipe Tg1 to the outside of the substrate processing apparatus 100, or the used phosphoric acid aqueous solution may be divided into plural times and discharged. . In other words, in the liquid discharge step, for example, the used phosphoric acid aqueous solution may be discharged from the chemical treatment tank CB2 through the liquid discharge pipe Tg1 at least once to the outside of the substrate processing apparatus 100 by the liquid discharge part EL1 . Also, for example, in the liquid replenishment step, the phosphoric acid aqueous solution before use may be replenished to the liquid discharge part EL1 via the eleventh piping part Tb11 once, or the phosphoric acid aqueous solution before use may be replenished in plural times. In other words, in the liquid replenishment step, for example, the phosphoric acid aqueous solution before use may be replenished at least once to the liquid discharge part EL1 through the eleventh piping part Tb11 by the liquid replenishment part AL1.
圖5係前處理之動作之一例的時序圖。於圖5(a)表示在前處理被執行之期間P0中關於使用前磷酸水溶液(新液)自第2液體供給部SL2朝向藥液處理槽CB2的供給量(亦稱為液體供給量)、第2液體供給部SL2之第4閥V4的開閉狀況、及使用完畢磷酸水溶液自藥液處理槽CB2朝向液體排出部EL1的排出量(亦稱為液體排出量)等之時間變化的時序圖。於圖5(b)表示在前處理之期間P0中關於使用前磷酸水溶液自液體補充部AL1朝向液體排出部EL1的補充量(亦稱為液體補充量)、及液體補充部AL1之第10閥V10的開閉狀況等之時間變化的時序圖。Fig. 5 is a sequence diagram of an example of the operation of the pre-processing. 5( a ) shows the supply amount (also referred to as liquid supply amount) from the second liquid supply part SL2 toward the chemical solution treatment tank CB2 about the phosphoric acid aqueous solution (new solution) before use in the period P0 during which the pretreatment is performed, A time chart showing the opening and closing of the fourth valve V4 of the second liquid supply part SL2 and the discharge amount (also referred to as liquid discharge amount) of the used phosphoric acid aqueous solution from the chemical treatment tank CB2 to the liquid discharge part EL1 over time. Figure 5(b) shows the replenishment amount (also referred to as the liquid replenishment amount) of the pre-use phosphoric acid aqueous solution from the liquid replenishment part AL1 toward the liquid discharge part EL1 in the period P0 of the pretreatment, and the tenth valve of the liquid replenishment part AL1 Timing chart of the time change of the V10's opening and closing conditions, etc.
此處，例如在液體供給量與液體排出量相等之情形時，在配方中例如前處理之期間P0的長度、液體供給量、液體補充量會被規定。液體補充量例如亦可被指定為相對於液體供給量之比例的1/N(N為1~10之整數)等。例如期間P0為180秒、液體供給量為2公升、N為2等之條件的情形可以配方來規定。於該情形時，液體排出量為2公升，而液體補充量為1公升(=2公升/N=2公升/2)。Here, for example, when the liquid supply amount is equal to the liquid discharge amount, the length of the pretreatment period P0, the liquid supply amount, and the liquid replenishment amount are specified in the recipe, for example. The liquid replenishment amount can also be specified, for example, as 1/N (N is an integer of 1 to 10) or the like relative to the ratio of the liquid supply amount. For example, the condition that the period P0 is 180 seconds, the liquid supply volume is 2 liters, and N is 2 can be specified by recipe. In this case, the liquid discharge amount is 2 liters, and the liquid replenishment amount is 1 liter (=2 liters/N=2 liters/2).
在圖5之例子中，例如於時刻t0a至時刻t0d之間的期間P0中，在時刻t0a至時刻t0c之間的期間P0s，使用前磷酸水溶液(新液)藉由第4閥V4之開放而以約Fr0[ml/min]之流量被供給至藥液處理槽CB2，並且使用完畢磷酸水溶液自藥液處理槽CB2以約Fr0[ml/min]之流量被供給至液體排出部EL1。此時，於將時刻t0a至時刻t0b間之期間P0s除以N的期間P0s/N中，使用前磷酸水溶液(新液)藉由第10閥V10之開放而以約Fr0[ml/min]之流量被補充至液體排出部EL1。Fr0例如被設定為2000ml/min等。In the example of FIG. 5 , for example, in the period P0 between time t0a and time t0d, in the period P0s between time t0a and time t0c, the phosphoric acid aqueous solution (new solution) before use is released by opening the fourth valve V4. It is supplied to the chemical solution treatment tank CB2 at a flow rate of about Fr0 [ml/min], and the used phosphoric acid aqueous solution is supplied to the liquid discharge part EL1 at a flow rate of about Fr0 [ml/min] from the chemical solution treatment tank CB2. At this time, in the period P0s/N that divides the period P0s between the time t0a and the time t0b by N, the phosphoric acid aqueous solution (new solution) before use is increased by about Fr0 [ml/min] by the opening of the tenth valve V10. The flow is supplemented to the liquid discharge part EL1. Fr0 is set to, for example, 2000 ml/min or the like.
然而，於前處理中，亦可不進行液體供給步驟及液體排出步驟。於該情形時，即便在液體補充步驟中，例如亦可藉由液體補充部AL1經由第11配管部Tb11將使用前磷酸水溶液補充至少一次至液體排出部EL1。如此，例如於主處理中在進行基板W之蝕刻處理前，可預先將使用前磷酸水溶液朝向液體排出部EL1供給至少一次，藉此於主處理中在進行蝕刻處理時，自藥液處理槽CB2朝向液體排出部EL1被排出之使用完畢磷酸水溶液與自液體補充部AL1朝向液體排出部EL1補充之使用前磷酸水溶液容易地被混合。藉此，例如於使用完畢磷酸水溶液自藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，使用完畢磷酸水溶液中來自基板W的溶出成分之結晶化難以發生。However, in the pretreatment, the liquid supply step and the liquid discharge step may not be performed. In this case, even in the liquid replenishment step, for example, the phosphoric acid aqueous solution before use can be replenished to the liquid discharge part EL1 at least once by the liquid replenishment part AL1 through the eleventh piping part Tb11. In this way, for example, before performing the etching process on the substrate W in the main process, the phosphoric acid aqueous solution before use can be supplied to the liquid discharge part EL1 at least once in advance, so that the chemical solution processing tank CB2 The used phosphoric acid aqueous solution discharged toward the liquid discharge part EL1 and the unused phosphoric acid aqueous solution replenished from the liquid replenishment part AL1 toward the liquid discharge part EL1 are easily mixed. Thereby, for example, crystallization of the eluted components from the substrate W in the used phosphoric acid aqueous solution is less likely to occur in the path of discharging the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100 .
＜1-3-1-2. 主處理之動作＞ 在主處理(步驟S2)中，於藥液處理部52對複數片基板W實施蝕刻處理。此處，例如使被保持在升降機LF2之複數片基板W浸漬於被貯存在藥液處理槽CB2之磷酸水溶液。藉此，於藥液處理部52藉由磷酸水溶液對複數片基板W進行蝕刻處理的步驟(亦稱為蝕刻步驟)便被執行。此時，適當地並行上述之由第1液體供給部SL1所進行之第1液體供給處理、由第1液體循環部CL1所進行之第1液體循環處理、由第2液體供給部SL2所進行之第2液體供給處理、由第2液體循環部CL2所進行之第2液體循環處理、由液體排出部EL1所進行之液體排出處理、及由液體補充部AL1所進行之液體補充處理。 ＜1-3-1-2. Main processing action＞ In the main process (step S2 ), the etching process is performed on the plurality of substrates W in the chemical solution processing unit 52 . Here, for example, the plurality of substrates W held by the elevator LF2 are immersed in the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2. In this way, the step of etching the plurality of substrates W with the phosphoric acid aqueous solution (also referred to as an etching step) is performed in the chemical solution processing unit 52 . At this time, the above-mentioned first liquid supply process performed by the first liquid supply part SL1, the first liquid circulation process performed by the first liquid circulation part CL1, and the process performed by the second liquid supply part SL2 are appropriately parallelized. The second liquid supply process, the second liquid circulation process by the second liquid circulation unit CL2, the liquid discharge process by the liquid discharge unit EL1, and the liquid replenishment process by the liquid replenishment unit AL1.
具體而言，於主處理中，亦與前處理相同地，例如第2液體供給部SL2將使用前磷酸水溶液供給至藥液處理槽CB2。此時，例如藥液處理槽CB2依據來自第2液體供給部SL2之使用前磷酸水溶液的供給，將使用完畢磷酸水溶液排出至液體排出部EL1。又，此時例如液體補充部AL1藉由將使用前磷酸水溶液補充至液體排出部EL1，而於液體排出部EL1將使用前磷酸水溶液混合於使用完畢磷酸水溶液，藉此生成混合磷酸水溶液。該混合磷酸水溶液自液體排出部EL1朝向處理液輸出部Ex0被輸送。因此，於主處理中，亦與前處理相同地，進行液體供給步驟、液體排出步驟、及液體補充步驟。然後，例如於在蝕刻步驟中藉由藥液處理槽CB2來進行蝕刻處理時，在液體供給步驟中藉由第1液體供給部SL1將使用前磷酸水溶液經由第4配管部Tb4供給至藥液處理槽CB2，並且於液體補充步驟中，藉由液體補充部AL1將使用前磷酸水溶液經由第11配管部Tb11補充至液體排出部EL1。Specifically, also in the main process, the second liquid supply part SL2 supplies the pre-use phosphoric acid aqueous solution to the chemical solution treatment tank CB2, for example, in the same manner as the pretreatment. At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 based on the supply of the pre-use phosphoric acid aqueous solution from the second liquid supply part SL2. Also, at this time, for example, the liquid replenishment unit AL1 supplies the unused phosphoric acid aqueous solution to the liquid discharge unit EL1, and mixes the unused phosphoric acid aqueous solution with the used phosphoric acid aqueous solution at the liquid discharge unit EL1 to generate a mixed phosphoric acid aqueous solution. This mixed phosphoric acid aqueous solution is sent from the liquid discharge part EL1 toward the process liquid output part Ex0. Therefore, also in the main processing, a liquid supply step, a liquid discharge step, and a liquid replenishment step are performed in the same manner as the pre-processing. Then, for example, when etching is performed in the chemical solution processing tank CB2 in the etching step, the phosphoric acid aqueous solution before use is supplied to the chemical solution processing tank CB2 through the fourth piping part Tb4 through the first liquid supply part SL1 in the liquid supply step. Tank CB2, and in the liquid replenishment step, the phosphoric acid aqueous solution before use is replenished to the liquid discharge part EL1 through the eleventh piping part Tb11 by the liquid replenishment part AL1.
如此一來，即便於主處理中，例如在將使用完畢磷酸水溶液自藥液處理槽CB2排出至基板處理裝置100外時，只要將矽之溶解濃度相對較低之使用前磷酸水溶液混合於該使用完畢磷酸水溶液並加以排出，於將使用完畢磷酸水溶液自藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，便可使作為使用完畢磷酸水溶液中來自基板W之溶出成分之結晶化之矽氧烷的結晶化難以發生。In this way, even in the main treatment, for example, when the used phosphoric acid aqueous solution is discharged from the chemical solution treatment tank CB2 to the outside of the substrate processing apparatus 100, it is only necessary to mix the pre-use phosphoric acid aqueous solution with a relatively low dissolved silicon concentration in the used phosphoric acid aqueous solution. The phosphoric acid aqueous solution is completed and discharged, and in the path of discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 toward the outside of the substrate processing apparatus 100, crystallized silicon, which is an eluted component from the substrate W in the used phosphoric acid aqueous solution, can be crystallized. Crystallization of oxane is difficult to occur.
此處，例如於液體補充步驟中，只要藉由將使用前磷酸水溶液混合於使用完畢磷酸水溶液而使混合磷酸水溶液中基板成分的溶解濃度未達溶解度，於將使用完畢磷酸水溶液自藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，便可使作為使用完畢磷酸水溶液中來自基板W之溶出成分結晶化之矽氧烷的結晶化難以發生。Here, for example, in the liquid replenishment step, as long as the dissolved concentration of the substrate component in the mixed phosphoric acid aqueous solution does not reach the solubility by mixing the pre-use phosphoric acid aqueous solution with the used phosphoric acid aqueous solution, the used phosphoric acid aqueous solution is removed from the chemical solution treatment tank. CB2 is discharged toward the outside of the substrate processing apparatus 100, so that the crystallization of siloxane, which is the crystallization of the eluted component from the substrate W in the used phosphoric acid aqueous solution, hardly occurs.
又，在本實施形態中，例如於液體供給步驟中，若經由作為液體供給管部之第4配管部Tb4將使用前磷酸水溶液供給至藥液處理槽CB2般之構成被採用，便可將用來供給至藥液處理槽CB2之使用前磷酸水溶液，亦使用於在液體排出部EL1混合至使用完畢磷酸水溶液之用途。藉此，例如可在用於將使用前磷酸水溶液供給至藥液處理槽CB2的第1液體供給部SL1及第2液體供給部SL2、與用於補充在液體排出部EL1混合至使用完畢磷酸水溶液之使用前磷酸水溶液的液體補充部AL1之間，謀求構成之至少一部分的共用化。例如，可謀求處理液供給源En0暨其周邊之配管部的共用化。其結果，例如可謀求基板處理裝置100之構成的簡化。Also, in the present embodiment, for example, in the liquid supply step, if the phosphoric acid aqueous solution before use is supplied to the chemical solution treatment tank CB2 through the fourth piping part Tb4 as the liquid supply pipe part, the structure can be used. The pre-use phosphoric acid aqueous solution supplied to the chemical solution treatment tank CB2 is also used for mixing the used phosphoric acid aqueous solution in the liquid discharge part EL1. Thereby, for example, the first liquid supply part SL1 and the second liquid supply part SL2 for supplying the phosphoric acid aqueous solution before use to the chemical treatment tank CB2, and the liquid discharge part EL1 for replenishment can be mixed until the used phosphoric acid aqueous solution Common use of at least a part of the configuration is made among the liquid replenishment parts AL1 of the phosphoric acid aqueous solution before use. For example, the processing liquid supply source En0 and the piping parts around it can be shared. As a result, for example, the structure of the substrate processing apparatus 100 can be simplified.
又，在本實施形態中，液體排出步驟包含第1液體排出步驟、液體冷卻步驟、及第2液體排出步驟。第1液體排出步驟例如包含將使用完畢磷酸水溶液自藥液處理槽CB2排出至作為液體排出管部Tg1所包含之第1部分之第7配管部Tb7及第8配管部Tb8之至少一者的步驟。液體冷卻步驟例如包含在液體排出部EL1所包含且連接於第7配管部Tb7之冷卻箱Ct1中將使用完畢磷酸水溶液或混合磷酸水溶液加以冷卻的步驟。第2液體排出步驟例如包含將混合磷酸水溶液自冷卻箱Ct1經由被包含於液體排出管部Tg1且作為被連接於冷卻箱Ct1之第2部分的第9配管部Tb9排出至基板處理裝置100外的步驟。若採用如此之構成，例如即便使用完畢磷酸水溶液藉由冷卻箱Ct1所冷卻，於將使用完畢磷酸水溶液自藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，作為使用完畢磷酸水溶液中來自基板W之溶出成分之結晶化之矽氧烷的結晶化仍會難以發生。Also, in the present embodiment, the liquid discharge step includes a first liquid discharge step, a liquid cooling step, and a second liquid discharge step. The first liquid discharge step includes, for example, the step of discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to at least one of the seventh piping portion Tb7 and the eighth piping portion Tb8 that are the first part included in the liquid discharge pipe portion Tg1. . The liquid cooling step includes, for example, a step of cooling the used phosphoric acid aqueous solution or the mixed phosphoric acid aqueous solution in the cooling tank Ct1 included in the liquid discharge part EL1 and connected to the seventh piping part Tb7. The second liquid discharge step includes, for example, discharging the mixed phosphoric acid aqueous solution from the cooling tank Ct1 to the outside of the substrate processing apparatus 100 through the ninth piping part Tb9 that is included in the liquid discharge pipe part Tg1 and is the second part connected to the cooling tank Ct1. step. If such a configuration is adopted, for example, even if the used phosphoric acid aqueous solution is cooled by the cooling box Ct1, the used phosphoric acid aqueous solution is discharged from the chemical liquid treatment tank CB2 toward the outside of the substrate processing apparatus 100 as the used phosphoric acid aqueous solution. The crystallization of siloxane in the crystallization of the eluted components of the substrate W still hardly occurs.
然後，在主處理(步驟S2)中，例如若被保持在升降機LF2之複數片基板W浸漬於被貯存在藥液處理槽CB2之磷酸水溶液的時間經過既定時間，被保持在升降機LF2之複數片基板W便會藉由升降機LF2之上升，而自被貯存在藥液處理槽CB2之磷酸水溶液中被拉起。在主處理(步驟S2)中，例如亦可對分別由複數片基板W所構成之複數個群組的基板W依序實施蝕刻處理。於該情形時，藉由升降機LF2之升降等，對分別由複數片基板W所構成之複數個群組的基板W重複地執行複數片基板W依序地被浸漬於被貯存在藥液處理槽CB2之磷酸水溶液且複數片基板W自磷酸水溶液中被拉起的處理。再者，對自被貯存在藥液處理槽CB2之磷酸水溶液所拉起之複數片基板W，例如在鄰接於藥液處理部52之洗淨處理部51實施藉由純水所進行的洗淨。Then, in the main process (step S2), for example, when a predetermined time elapses for the plurality of substrates W held on the elevator LF2 to be immersed in the phosphoric acid aqueous solution stored in the chemical treatment tank CB2, the plurality of substrates W held on the elevator LF2 The substrate W is pulled up from the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2 by the lifter LF2 rising. In the main process (step S2 ), for example, the etching process may be sequentially performed on a plurality of groups of substrates W each composed of a plurality of substrates W. In this case, the plurality of substrates W are repeatedly immersed in the chemical solution processing tank stored in the chemical solution processing tank by the lifter LF2 moving up and down. CB2 phosphoric acid aqueous solution and a plurality of substrates W are pulled up from the phosphoric acid aqueous solution. Furthermore, the plurality of substrates W pulled up from the phosphoric acid aqueous solution stored in the chemical treatment tank CB2 are cleaned with pure water, for example, in the cleaning treatment unit 51 adjacent to the chemical treatment unit 52 . .
然而，於進行主處理時，例如存在有藥液處理槽CB2容量之5~10成左右的磷酸水溶液會被替換之情形。於該情形時，在主處理中，例如亦可於在蝕刻步驟中藉由藥液處理槽CB2來對基板W進行蝕刻處理時，使於液體供給步驟中由第2液體供給部SL2所進行之經由第4配管部Tb4之使用前磷酸水溶液朝向藥液處理槽CB2之兩次以上的供給、及於液體補充步驟中由液體補充部AL1所進行之經由第11配管部Tb11之使用前磷酸水溶液朝向液體排出部EL1之兩次以上的補充同步地加以執行。此處，在主處理中，亦可於進行蝕刻處理時，將使用前磷酸水溶液自第2液體供給部SL2朝向藥液處理槽CB2之供給、使用完畢磷酸水溶液自藥液處理槽CB2朝向液體排出部EL1之排出、使用前磷酸水溶液自液體補充部AL1朝向液體排出部EL1之供給分別分割為以分割數M所規定之M次，並使其等相互同步地加以執行。However, when the main treatment is performed, for example, the phosphoric acid aqueous solution of about 50% to 100% of the capacity of the chemical treatment tank CB2 may be replaced. In this case, in the main process, for example, when the substrate W is etched in the chemical solution processing tank CB2 in the etching step, the second liquid supply part SL2 in the liquid supply step may perform the etching process. Two or more supplies of the pre-use phosphoric acid aqueous solution to the chemical treatment tank CB2 via the fourth piping part Tb4, and the pre-use phosphoric acid aqueous solution via the eleventh piping part Tb11 in the liquid replenishment step by the liquid replenishment part AL1 Two or more replenishments of the liquid discharge unit EL1 are performed synchronously. Here, in the main process, during the etching process, the unused phosphoric acid aqueous solution may be supplied from the second liquid supply part SL2 to the chemical solution treatment tank CB2, and the used phosphoric acid aqueous solution may be discharged from the chemical solution treatment tank CB2 to the liquid. The discharge from the part EL1 and the supply of the pre-use phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 are divided into M times specified by the number of divisions M and executed in synchronization with each other.
若採用如此之動作，例如於主處理中，相對於時間之經過藥液處理槽CB2所貯存之磷酸水溶液的狀態容易變得大致均勻。而且，例如在液體排出部EL1所生成之混合磷酸水溶液中基板成分的溶解濃度會容易地被均勻化。其結果，例如於將使用完畢磷酸水溶液自藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，使用完畢磷酸水溶液中來自基板W的溶出成分之結晶化(矽氧烷之結晶化)會難以發生。With such an operation, for example, in the main process, the state of the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2 tends to become substantially uniform with respect to time. Furthermore, for example, the dissolved concentration of the substrate component in the mixed phosphoric acid aqueous solution generated by the liquid discharge unit EL1 can be easily made uniform. As a result, for example, crystallization (crystallization of siloxane) of components eluted from the substrate W in the used phosphoric acid aqueous solution occurs in the path for discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 toward the outside of the substrate processing apparatus 100. Hard to happen.
圖6係主處理之動作之一例的時序圖。於圖6(a)表示在主處理被執行之期間P1中關於使用前磷酸水溶液(新液)自第2液體供給部SL2朝向藥液處理槽CB2的供給量(液體供給量)、第2液體供給部SL2之第4閥V4的開閉狀況、及使用完畢磷酸水溶液自藥液處理槽CB2朝向液體排出部EL1的排出量(液體排出量)等之時間變化的時序圖。於圖6(b)表示在主處理之期間P1中關於使用前磷酸水溶液自液體補充部AL1朝向液體排出部EL1的補充量(液體補充量)、及液體補充部AL1之第10閥V10的開閉狀況等之時間變化的時序圖。FIG. 6 is a sequence diagram of an example of the operation of the main processing. 6(a) shows the supply (liquid supply) of the pre-use phosphoric acid aqueous solution (new solution) from the second liquid supply part SL2 toward the chemical treatment tank CB2 during the period P1 during which the main treatment is performed, the second liquid A time chart showing the opening and closing of the fourth valve V4 of the supply part SL2 and the discharge amount (liquid discharge amount) of the used phosphoric acid aqueous solution from the chemical treatment tank CB2 to the liquid discharge part EL1 over time. Fig. 6(b) shows the replenishment amount (liquid replenishment amount) of the pre-use phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 in the period P1 of the main process, and the opening and closing of the tenth valve V10 of the liquid replenishment part AL1 A timing chart of time changes in conditions, etc.
此處，例如於液體供給量與液體排出量相等之情形時，在配方中例如對主處理之期間P1的長度、液體供給量、液體補充量、分割數M加以規定。液體補充量例如亦可由相對於液體供給量之比例的1/N(N為1~10之整數)等所指定。例如可存在有期間P1為7200秒、液體供給量為50公升、N為10、M為10等之條件由配方所規定的情形。於該情形時，每一次之液體供給量為5公升(=50公升/M=50公升/10)，液體排出量為50公升，每一次之液體排出量為5公升(=50公升/10=50公升/M)，液體補充量為5公升(=50公升/10=50公升/N)，而每一次之液體補充量為0.5公升(=5公升/10=5公升/M)。Here, for example, when the liquid supply amount is equal to the liquid discharge amount, the length of the period P1 of the main treatment, the liquid supply amount, the liquid replenishment amount, and the division number M are specified in the recipe, for example. The liquid replenishment amount can also be designated by, for example, 1/N (N is an integer of 1 to 10) of the ratio to the liquid supply amount. For example, conditions such as period P1 being 7200 seconds, liquid supply volume being 50 liters, N being 10, and M being 10 may be prescribed by a recipe. In this case, the liquid supply volume for each time is 5 liters (=50 liters/M=50 liters/10), the liquid discharge volume is 50 liters, and the liquid discharge volume for each time is 5 liters (=50 liters/10= 50 liters/M), the liquid replenishment amount is 5 liters (=50 liters/10=50 liters/N), and the liquid replenishment amount for each time is 0.5 liters (=5 liters/10=5 liters/M).
在圖6之例子中，例如於將時刻t1a至時刻t1b間之期間P1分割為十的各個期間(例如720秒鐘)中，使用前磷酸水溶液(新液)藉由第4閥V4之開放而以約Fr1[ml/min]之流量被供給至藥液處理槽CB2，並且使用完畢磷酸水溶液自藥液處理槽CB2以約Fr1[ml/min]之流量被供給至液體排出部EL1。此時，於將時刻t1a至時刻t1b間之期間P1分割為十的各個期間(例如720秒鐘)中，使用前磷酸水溶液(新液)藉由第10閥V10之開放而以約Fr1[ml/min]之流量被補充至液體排出部EL1。Fr1例如被設定為800ml/min等。In the example of FIG. 6, for example, in each period (for example, 720 seconds) that divides the period P1 between the time t1a and the time t1b into ten, the phosphoric acid aqueous solution (new solution) before use is released by the opening of the fourth valve V4. It is supplied to the chemical solution treatment tank CB2 at a flow rate of about Fr1 [ml/min], and the used phosphoric acid aqueous solution is supplied to the liquid discharge part EL1 at a flow rate of about Fr1 [ml/min] from the chemical solution treatment tank CB2. At this time, in each period (for example, 720 seconds) that divides the period P1 between the time t1a and the time t1b into ten, the pre-use phosphoric acid aqueous solution (new solution) is reduced by about Fr1 [ml] by the opening of the tenth valve V10 /min] is added to the liquid discharge part EL1. Fr1 is set to, for example, 800 ml/min or the like.
圖7係表示主處理之動作流程之一例的流程圖。本動作流程例如藉由控制部10對基板處理裝置100之各部分之動作進行控制所實現。在圖7之步驟S21中，控制部10對於作為處理之對象之複數片基板W意認操作人員所指定之配方。在步驟S22中，藉由控制部10來判定在步驟S21所意認之配方中，於進行主處理中之蝕刻處理時，將使用前磷酸水溶液自第2液體供給部SL2朝向藥液處理槽CB2之供給、使用完畢磷酸水溶液自藥液處理槽CB2朝向液體排出部EL1之排出、及使用前磷酸水溶液自液體補充部AL1朝向液體排出部EL1之補充分別分割為M次並加以進行的功能(亦稱為分割功能)是否被設為有效。此處，若分割功能為有效，在步驟S23中，於執行主處理中之蝕刻處理時，便分別將使用前磷酸水溶液自第2液體供給部SL2朝向藥液處理槽CB2之供給、使用完畢磷酸水溶液自藥液處理槽CB2朝向液體排出部EL1之排出、及使用前磷酸水溶液自液體補充部AL1朝向液體排出部EL1之補充進行分割並加以進行。另一方面，若分割功能並非有效，在步驟S24中，於執行主處理中之蝕刻處理時，便不分別對使用前磷酸水溶液自第2液體供給部SL2朝向藥液處理槽CB2之供給、使用完畢磷酸水溶液自藥液處理槽CB2朝向液體排出部EL1之排出、使用前磷酸水溶液自液體補充部AL1朝向液體排出部EL1之補充進行分割而加以進行。FIG. 7 is a flowchart showing an example of the flow of operation of the main processing. This operation flow is realized, for example, by the control unit 10 controlling the operations of various parts of the substrate processing apparatus 100 . In step S21 of FIG. 7 , the control unit 10 recognizes the recipe specified by the operator for the plurality of substrates W to be processed. In step S22, it is judged by the control unit 10 that in the recipe recognized in step S21, when the etching treatment in the main treatment is performed, the phosphoric acid aqueous solution before use is directed from the second liquid supply unit SL2 to the chemical treatment tank CB2 The function of supplying the used phosphoric acid aqueous solution from the liquid treatment tank CB2 to the liquid discharge part EL1, and replenishing the phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 before use is divided into M times and performed respectively (also called split function) is enabled or not. Here, if the division function is enabled, in step S23, when the etching process in the main process is performed, the supply of the pre-used phosphoric acid aqueous solution from the second liquid supply part SL2 to the chemical solution processing tank CB2, and the used phosphoric acid solution are respectively supplied. The discharge of the aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1 and the replenishment of the pre-use phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 are divided and performed. On the other hand, if the division function is not effective, in step S24, when performing the etching process in the main process, the supply and use of the pre-use phosphoric acid aqueous solution from the second liquid supply part SL2 to the chemical solution processing tank CB2 are not respectively performed. The discharge of the phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1 is completed, and the replenishment of the phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 is performed by dividing and performing.
＜1-3-1-3. 後處理之動作＞ 在後處理(步驟S3)中，例如於主處理(步驟S2)結束後，藉由磷酸水溶液對藥液處理槽CB2之供給等，來進行為了下一個循環處理之執行的準備。 ＜1-3-1-3. Post-processing actions＞ In the post-processing (step S3 ), for example, after the main processing (step S2 ), preparations are made for execution of the next cycle processing by supplying the phosphoric acid aqueous solution to the chemical solution processing tank CB2 .
＜1-3-2. 蝕刻處理之間隔期間中之動作＞ 在基板處理裝置100中，存在有因基板W之處理的計劃或是維護的計劃，而在進行基板W之蝕刻處理之後，至進行其次之基板W之蝕刻處理前，需要等待長時間之情形。於該情形時，存在有於藥液處理部52中基板W之蝕刻處理不會被執行的期間(既稱為非執行期間亦稱為間隔期間)。在該間隔期間中，存在有若使用完畢磷酸水溶液跨長期間殘留於基板處理裝置100之液體排出部EL1，於該使用完畢磷酸水溶液便會發生來自基板W之溶出成分的結晶化(矽氧烷之結晶化)之可能性。 ＜1-3-2. Operation during the interval between etching processes＞ In the substrate processing apparatus 100 , depending on the processing plan of the substrate W or the maintenance plan, it may take a long time after performing the etching process of the substrate W before performing the subsequent etching process of the substrate W. In this case, there is a period in which the etching process of the substrate W is not performed in the chemical solution processing unit 52 (referred to as a non-execution period or an interval period). During this interval period, if the used phosphoric acid aqueous solution remains in the liquid discharge part EL1 of the substrate processing apparatus 100 for a long period of time, the crystallization (siloxane) of the eluted components from the substrate W will occur in the used phosphoric acid aqueous solution. the possibility of crystallization).
＜1-3-2-1. 間隔期間液體補充處理＞ 在本實施形態之基板處理裝置100中，例如亦可為控制部10於執行蝕刻步驟中由藥液處理槽CB2所進行之對基板W的蝕刻處理後，且至執行其次之蝕刻步驟中由藥液處理槽CB2所進行之對基板W的蝕刻處理為止之間隔期間，在既定之時間點執行液體補充步驟中由液體補充部AL1所進行之使用前磷酸水溶液經由第11配管部Tb11而朝液體排出部EL1之補充。以下，將如此在間隔期間中進行於液體補充步驟中由液體補充部AL1所進行之使用前磷酸水溶液經由第11配管部Tb11而朝向液體排出部EL1之補充的處理，稱為「間隔期間液體補充處理」。又，作為既定之時間點，例如可為每當第1既定時間P2藉由控制部10所具有之功能之一的計時器10d所計數時的時間點。作為由計時器10d所進行之計數開始的時間點，例如可為在藥液處理部52之蝕刻處理結束的時間點及在藥液處理部52中蝕刻處理未被執行的狀態下基板處理裝置100被設定為自動運轉狀態的時間點等之藥液處理部52被設定為待機狀態的時間點、以及間隔期間液體補充處理結束的時間點等。第1既定時間P2例如可依據由操作人員所進行經由輸入部8之輸入而被設定為1~48小時左右之間之任意的時間。又，作為既定之時間點之由液體補充部AL1所進行之使用前磷酸水溶液朝向液體排出部EL1的補充量，例如可為將冷卻箱Ct1之容量(例如5~50公升左右)乘以1/n(n為1~10之整數)左右的既定量。 ＜1-3-2-1. Fluid supplementation during the interval＞ In the substrate processing apparatus 100 of this embodiment, for example, after the control unit 10 performs the etching process on the substrate W in the chemical solution processing tank CB2 in the etching step, and then performs the chemical treatment in the next etching step, During the interval between the liquid processing tank CB2 performing the etching process on the substrate W, the pre-use phosphoric acid aqueous solution performed by the liquid replenishing part AL1 in the liquid replenishing step is performed at a predetermined point of time and discharged to the liquid through the eleventh piping part Tb11. Supplement to Part EL1. Hereinafter, the process of replenishing the pre-use phosphoric acid aqueous solution to the liquid discharge part EL1 through the eleventh piping part Tb11 by the liquid replenishment part AL1 in the liquid replenishment step during the interval is referred to as "interval liquid replenishment." deal with". Moreover, as a predetermined time point, for example, it may be a time point every time the first predetermined time P2 is counted by the timer 10d which is one of the functions of the control unit 10 . The timing at which the counting by the timer 10d is started may be, for example, the timing at which the etching process of the chemical solution processing unit 52 is completed or the substrate processing apparatus 100 is in a state where the etching process is not performed in the chemical solution processing unit 52 . The time when the chemical solution processing unit 52 is set to the standby state, such as the time when the automatic operation state is set, and the time when the liquid replenishment process ends during the interval, and the like. The first predetermined time P2 can be set to an arbitrary time between about 1 to 48 hours, for example, according to an input by an operator via the input unit 8 . In addition, as the replenishment amount of the pre-use phosphoric acid aqueous solution to the liquid discharge part EL1 by the liquid replenishment part AL1 at a predetermined time point, for example, the capacity of the cooling tank Ct1 (for example, about 5 to 50 liters) can be multiplied by 1/ A predetermined amount around n (n is an integer from 1 to 10).
圖8係用以說明間隔期間液體補充處理之動作的圖。圖8(a)表示間隔期間液體補充處理之時序圖的一例，而圖8(b)表示間隔期間液體補充處理之動作流程之一例的流程圖。本動作流程例如藉由控制部10對基板處理裝置100之各部分之動作進行控制所實現。Fig. 8 is a diagram for explaining the operation of the liquid replenishment process during the interval. FIG. 8( a ) shows an example of a timing chart of the liquid replenishment process during the interval, and FIG. 8( b ) shows a flowchart of an example of an operation flow of the liquid replenishment process during the interval. This operation flow is realized, for example, by the control unit 10 controlling the operations of various parts of the substrate processing apparatus 100 .
如圖8(a)所示，例如可為間隔期間液體補充處理於間隔期間每經過第1既定時間P2時被執行的情形。As shown in FIG. 8( a ), for example, it may be a case where the interval period liquid replenishment process is executed every time the first predetermined time P2 passes during the interval period.
此處，例如藉由進行圖8(b)之步驟S41~S47之處理，可執行在間隔期間之間隔期間液體補充處理。Here, for example, by performing the processing of steps S41 to S47 in FIG. 8( b ), it is possible to execute the liquid replenishment process between intervals.
在步驟S41中，控制部10判定藥液處理部52是否處於待機狀態。此處，重複進行步驟S41之判定直至藥液處理部52成為待機狀態為止，若藥液處理部52成為待機狀態，便前進至步驟S42。In step S41, the control unit 10 determines whether or not the chemical solution processing unit 52 is in the standby state. Here, the determination in step S41 is repeated until the chemical solution processing unit 52 enters the standby state, and when the chemical solution processing unit 52 enters the standby state, the process proceeds to step S42.
在步驟S42中，控制部10開始進行用以對第1既定時間P2的經過進行計測之計數的處理(亦稱為第1計數處理)。In step S42, the control part 10 starts the counting process (also called 1st counting process) for measuring the elapse of 1st predetermined time P2.
在步驟S43中，控制部10判定藉由藥液處理部52所進行之包含前處理、主處理及後處理等之循環處理是否已開始。於此，若循環處理已開始，便返回步驟S41。另一方面，若循環處理尚未開始，便前進至步驟S44。In step S43, the control unit 10 judges whether the cycle processing including pre-processing, main processing, and post-processing performed by the chemical solution processing unit 52 has started. Here, if the loop processing has started, it returns to step S41. On the other hand, if the loop processing has not yet started, it proceeds to step S44.
在步驟S44中，控制部10判定自第1計數處理開始後是否已經過第1既定時間P2。此處，若第1計數處理自開始後尚未經過第1既定時間P2，便返回步驟S43。另一方面，若第1計數處理自開始後已經過第1既定時間P2，便前進至步驟S45。In step S44, the control part 10 judges whether the 1st predetermined time P2 has elapsed since the 1st count process started. Here, if the first predetermined time P2 has not passed since the start of the first counting process, the process returns to step S43. On the other hand, if the first predetermined time P2 has elapsed since the start of the first counting process, the process proceeds to step S45.
在步驟S45中，控制部10使由液體補充部AL1所進行之間隔期間液體補充處理開始。此時，例如第9配管部Tb9之流路藉由第9閥V9而適當地被開放，混合磷酸水溶液可藉此自冷卻箱Ct1被送出至處理液輸出部Ex0。In step S45, the control unit 10 starts the interval liquid replenishment process by the liquid replenishment unit AL1. At this time, for example, the flow path of the ninth piping part Tb9 is properly opened by the ninth valve V9, and the mixed phosphoric acid aqueous solution can be sent out from the cooling tank Ct1 to the processing liquid output part Ex0 by this.
在步驟S46中，控制部10判定間隔期間液體補充處理中處理前磷酸水溶液自液體補充部AL1朝向液體排出部EL1的補充量是否已到達既定量。此處，控制部10重複進行步驟S46之判定直至補充量到達既定量為止，若補充量到達既定量，便在步驟S47結束間隔期間液體補充處理，並返回步驟S42。In step S46, the control part 10 judges whether the replenishment amount of the preprocessed phosphoric acid aqueous solution from the liquid replenishment part AL1 toward the liquid discharge part EL1 has reached a predetermined amount in the liquid replenishment process in an interval period. Here, the control unit 10 repeats the determination in step S46 until the replenishment amount reaches the predetermined amount. If the replenishment amount reaches the predetermined amount, the interval liquid replenishment process ends in step S47 and returns to step S42.
若採用如此之構成，例如即便於存在有間隔期間之情形時，於將使用完畢磷酸水溶液自藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，使用完畢磷酸水溶液中來自基板W的溶出成分之結晶化(矽氧烷之結晶化)亦會難以發生。With such a configuration, for example, even when there is an interval, the used phosphoric acid aqueous solution is eluted from the substrate W in the route for discharging the used phosphoric acid aqueous solution from the chemical treatment tank CB2 toward the outside of the substrate processing apparatus 100. Crystallization of components (crystallization of siloxane) is also difficult to occur.
＜1-3-3. 冷卻箱中與貯存量對應之動作＞ 如上述般，例如於藥液處理部52進行包含蝕刻處理之循環處理時，使用完畢磷酸水溶液自藥液處理槽CB2被輸送至液體排出部EL1之冷卻箱Ct1。因此，例如可為如下之態樣：以即便在間隔期間等仍可執行循環處理之方式，在冷卻箱Ct1預先確保某種程度之可收容的容量。因此，在基板處理裝置100中，例如亦可監視冷卻箱Ct1中磷酸水溶液的貯存量，而進行依據該貯存量之動作。 ＜1-3-3. Operation corresponding to storage capacity in cooling box＞ As described above, for example, when the chemical solution processing unit 52 performs circulation processing including etching, the used phosphoric acid aqueous solution is sent from the chemical solution treatment tank CB2 to the cooling tank Ct1 of the liquid discharge unit EL1. Therefore, for example, an aspect in which a certain amount of accommodating capacity is secured in advance in the cooling box Ct1 can be performed so that the circulation process can be performed even during an interval or the like. Therefore, in the substrate processing apparatus 100, for example, the storage amount of the phosphoric acid aqueous solution in the cooling box Ct1 may be monitored, and an operation based on the storage amount may be performed.
圖9係用以說明冷卻箱Ct1中之成為監視對象之貯存量的圖。此處，例如可預設為對於冷卻箱Ct1之貯存量，檢測部M4可對4個階層之貯存量(第1~4貯存量Lv1~Lv4)進行監視之情形。於該情形時，在基板處理裝置100中，例如進行對被貯存於冷卻箱Ct1之液體的貯存量進行檢測之處理的步驟(亦稱為檢測步驟)。此處，例如可預設為第1貯存量Lv1係上限位準，第2貯存量Lv2係定量位準，第3貯存量Lv3係作為第1臨限值之不可投入位準，而第4貯存量Lv4係作為第2臨限值之不可補充位準的情形。第3貯存量Lv3與第4貯存量Lv4例如既可不同，亦可相同。FIG. 9 is a diagram for explaining the storage amount to be monitored in the cooling tank Ct1. Here, for example, with respect to the storage amount of the cooling box Ct1, the detection part M4 can monitor the storage amount of 4 levels (the 1st - 4th storage volume Lv1-Lv4). In this case, in the substrate processing apparatus 100, for example, a process of detecting the storage amount of the liquid stored in the cooling tank Ct1 (also referred to as a detection step) is performed. Here, for example, it can be preset that the first storage volume Lv1 is the upper limit level, the second storage volume Lv2 is the quantitative level, the third storage volume Lv3 is the unfeedable level as the first threshold value, and the fourth storage volume Quantity Lv4 is the case where it is the non-replenishment level of the second threshold value. For example, the third storage amount Lv3 and the fourth storage amount Lv4 may be different or the same.
＜1-3-3-1. 間隔期間液體補充處理之監視＞ 例如亦可為，控制部10若於檢測步驟中被貯存在冷卻箱Ct1之液體的貯存量已到達作為第2臨限值之第4貯存量Lv4之情形藉由檢測部M4所檢測出，便禁止間隔期間液體補充處理之執行。對於如此之處理，可為控制部10分別對第1液體處理部5及第2液體處理部6之每個處理部進行之態樣。若採用如此之構成，例如若作為第2臨限值之第4貯存量Lv4以上的液體被貯存於冷卻箱Ct1，於由藥液處理槽CB2所進行之蝕刻處理未被進行的間隔期間中，便不執行使用前磷酸水溶液在既定時間點朝向液體排出部EL1之補充。 ＜1-3-3-1. Monitoring of fluid supplementation during the interval＞ For example, if the control unit 10 detects by the detection unit M4 that the storage volume of the liquid stored in the cooling tank Ct1 has reached the fourth storage volume Lv4 as the second threshold value in the detection step, then Execution of fluid supplementation during intervals is prohibited. Such processing may be an aspect in which the control unit 10 performs each processing unit of the first liquid processing unit 5 and the second liquid processing unit 6 . With such a configuration, for example, if the liquid above the fourth storage volume Lv4 as the second threshold value is stored in the cooling tank Ct1, during the interval period when the etching process in the chemical liquid treatment tank CB2 is not performed, The replenishment of the phosphoric acid aqueous solution before use to the liquid discharge part EL1 at a predetermined point of time is not executed.
圖10係用以說明依據冷卻箱Ct1之貯存量之監視結果所進行之間隔期間液體補充處理之動作的圖。圖10(a)表示依據冷卻箱Ct1之貯存量之監視結果所進行之間隔期間液體補充處理之時序圖之一例，而圖10(b)表示依據冷卻箱Ct1之貯存量之監視結果所進行之間隔期間液體補充處理之動作流程之一例的流程圖。本動作流程例如藉由控制部10對基板處理裝置100之各部分之動作進行控制所實現。FIG. 10 is a diagram for explaining the operation of liquid replenishment processing during intervals performed based on the monitoring result of the storage capacity of the cooling tank Ct1. Fig. 10(a) shows an example of a timing chart of liquid replenishment processing at intervals based on the monitoring result of the storage capacity of the cooling tank Ct1, and Fig. 10(b) shows an example of the timing chart based on the monitoring result of the storage capacity of the cooling tank Ct1. It is a flow chart of an example of the operation flow of liquid replenishment processing during the interval. This operation flow is realized, for example, by the control unit 10 controlling the operations of various parts of the substrate processing apparatus 100 .
如圖10(a)所示，例如可為如下之態樣：間隔期間液體補充處理通常在間隔期間中每經過第1既定時間P2時會被執行，但在時刻t3b中，由於被貯存於冷卻箱Ct1之液體的貯存量已到達作為第2臨限值之第4貯存量Lv4，因此不進行間隔期間液體補充處理，而從最初開始進行用以對第1既定時間P2之經過進行計測的第1計數處理。As shown in Fig. 10(a), for example, the following situation can be adopted: the liquid replenishment process during the interval is usually performed every time the first predetermined time P2 passes during the interval, but at time t3b, due to being stored in the cooling Since the storage amount of the liquid in the tank Ct1 has reached the fourth storage amount Lv4 which is the second threshold value, the liquid replenishment process during the interval is not performed, and the first step for measuring the elapse of the first predetermined time P2 is performed from the beginning. 1 count treatment.
圖10(b)之動作流程係於上述之圖8(b)之動作流程之步驟S44的處理與步驟S45的處理之間***步驟S44b的處理者。在圖10(b)之步驟S44b中，控制部10藉由檢測部M4來判定被貯存於冷卻箱Ct1之液體的貯存量是否已到達作為第2臨限值之第4貯存量Lv4。此處，若液體之貯存量已到達第4貯存量Lv4，便返回步驟S42。另一方面，若液體之貯存量未到達第4貯存量Lv4，便前進至步驟S45。The operation flow of FIG. 10(b) is to insert the processor of step S44b between the processing of step S44 and the processing of step S45 in the operation flow of FIG. 8(b) mentioned above. In step S44b of FIG. 10(b), the control unit 10 judges whether the storage amount of the liquid stored in the cooling tank Ct1 has reached the fourth storage amount Lv4 as the second threshold value through the detection unit M4. Here, if the storage volume of the liquid has reached the fourth storage volume Lv4, the process returns to step S42. On the other hand, if the storage amount of the liquid has not reached the fourth storage amount Lv4, the process proceeds to step S45.
若採用如此之構成，例如可於間隔期間被解除後對基板W實施蝕刻處理時，抑制無法將使用完畢磷酸水溶液自藥液處理槽CB2排出至液體排出部EL1而在蝕刻處理所產生之不良情況的發生之情形。With such a configuration, for example, when the substrate W is etched after the interval period is released, it is possible to suppress the disadvantages caused by the inability to discharge the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1 during the etching process. the occurrence of the situation.
然而，例如可預設為如下之情形：在間隔期間中，由檢測部M4所檢測出之貯存量到達第4貯存量Lv4之狀態因為在包含檢測部M4及冷卻箱Ct1之液體排出部EL1所產生之某種不良情況，而持續過長的時間，從而無法進行間隔期間液體補充處理。因此，例如控制部10亦可於間隔期間中，對間隔期間液體補充處理未被執行之時間已到達第2既定時間P3之情形加以回應，而藉由輸出部9發送第1警報。第2既定時間P3例如被設定為第1既定時間P2之既定複數倍(例如2~5倍)左右。第1警報例如可應用既定之警告畫面的顯示及警告聲音之輸出等。對於如此之處理，可為控制部10分別對第1液體處理部5及第2液體處理部6之每個處理部進行之態樣。However, for example, the following situation may be preset: during the interval period, the storage amount detected by the detection part M4 reaches the fourth storage amount Lv4 due to the liquid discharge part EL1 including the detection part M4 and the cooling tank Ct1. Some kind of unfavorable condition occurs, and lasts for too long, so that the fluid replenishment treatment during the interval cannot be carried out. Therefore, for example, the control unit 10 may send a first alarm through the output unit 9 in response to the second predetermined time P3 during which the fluid replenishment process has not been executed during the interval period. The second predetermined time P3 is set, for example, at about a predetermined multiple (for example, 2 to 5 times) of the first predetermined time P2. For the first alarm, for example, the display of a predetermined warning screen, the output of a warning sound, and the like can be applied. Such processing may be an aspect in which the control unit 10 performs each processing unit of the first liquid processing unit 5 and the second liquid processing unit 6 .
圖11係用以說明關於間隔期間液體補充處理未被執行之期間(亦稱為不執行期間)之監視之動作的圖。圖11(a)表示間隔期間液體補充處理之不執行期間之監視動作之時序圖之一例，而圖11(b)表示關於間隔期間液體補充處理之不執行期間之監視動作之動作流程之一例的流程圖。本動作流程例如藉由控制部10對基板處理裝置100之各部分之動作進行控制所實現。FIG. 11 is a diagram for explaining an operation related to monitoring during a period in which liquid replenishment processing is not performed (also referred to as a non-execution period) during an interval period. Fig. 11(a) shows an example of a timing chart of the monitoring operation during the non-execution period of the liquid replenishment process during the interval period, and Fig. 11(b) shows an example of the operation flow of the monitoring operation during the non-execution period of the liquid replenishment process during the interval period. flow chart. This operation flow is realized, for example, by the control unit 10 controlling the operations of various parts of the substrate processing apparatus 100 .
如圖11(a)所示，例如可為對間隔期間液體補充處理之不執行期間已到達第2既定時間P3之情形加以回應，而輸出部9發送第1警報之態樣。As shown in FIG. 11( a ), for example, the output unit 9 may send a first alarm in response to the fact that the non-execution period of the liquid replenishment process during the interval period has reached the second predetermined time P3.
此處，例如藉由進行圖11(b)之步驟S51~S57之處理，可在間隔期間中執行間隔期間液體補充處理之不執行期間的監視動作。Here, for example, by performing the processing of steps S51 to S57 in FIG. 11( b ), the monitoring operation during the non-execution period of the liquid replenishment process during the interval can be executed during the interval.
在步驟S51中，控制部10判定藥液處理部52是否處於待機狀態。此處，控制部10重複進行步驟S51之判定直至藥液處理部52成為待機狀態為止，若藥液處理部52成為待機狀態，便前進至步驟S52。In step S51, the control unit 10 determines whether or not the chemical solution processing unit 52 is in the standby state. Here, the control unit 10 repeats the determination in step S51 until the chemical solution processing unit 52 enters the standby state, and when the chemical solution processing unit 52 enters the standby state, the process proceeds to step S52.
在步驟S52中，控制部10開始進行用以對第2既定時間P3之經過進行計測之計數的處理(亦稱為第2計數處理)。In step S52, the control part 10 starts the counting process (it also calls a 2nd counting process) for measuring the elapse of the 2nd predetermined time P3.
在步驟S53中，控制部10判定包含由液體補充部AL1所進行之使用前磷酸水溶液朝向液體排出部EL1之補充在內的處理(亦稱為液體補充含有處理)是否已被執行。於液體補充含有處理中，例如包含有包含前處理、主處理及後處理等之循環處理、以及間隔期間液體補充處理。此處，若液體補充含有處理已被執行，便前進至步驟S57，若液體補充含有處理之執行結束，便返回步驟S51。另一方面，若液體補充含有處理未被執行，便前進至步驟S54。In step S53 , control unit 10 determines whether or not processing including replenishment of pre-used phosphoric acid aqueous solution to liquid discharge unit EL1 by liquid replenishment unit AL1 (also referred to as liquid replenishment and content processing) has been performed. In liquid replenishment treatment, for example, cycle treatment including pre-treatment, main treatment and post-treatment, etc., and liquid replenishment treatment during intervals are included. Here, if the liquid replenishment and containment process has been executed, the process proceeds to step S57, and when the liquid replenishment and containment process is completed, the process returns to step S51. On the other hand, if the liquid supplementation process is not performed, it will progress to step S54.
在步驟S54中，控制部10判定自第2計數處理開始後是否已經過第2既定時間P3。此處，若自第2計數處理開始後尚未經過第2既定時間P3，便返回步驟S53。另一方面，若自第2計數處理開始後已經過第2既定時間P3，便前進至步驟S55。In step S54, the control part 10 judges whether the 2nd predetermined time P3 has elapsed since the 2nd count process started. Here, if the second predetermined time P3 has not elapsed since the start of the second count process, the process returns to step S53. On the other hand, if the second predetermined time P3 has elapsed since the start of the second count process, the process proceeds to step S55.
在步驟S55中，控制部10藉由輸出部9進行第1警報之發送。In step S55 , the control unit 10 transmits the first alarm through the output unit 9 .
在步驟S56中，控制部10設定為間隔期間液體補充處理及循環處理之執行被禁止之狀態(亦稱為處理禁止狀態)。此時，例如可為如下之態樣：控制部10不將複數片基板W投入至藥液處理部52之藥液處理槽CB2，而將其留置在洗淨處理部51等之複數片基板W難以產生變化的區域。In step S56, the control unit 10 sets a state in which the execution of the liquid replenishment process and circulation process is prohibited during the interval (also referred to as a process prohibited state). In this case, for example, the control unit 10 does not put the plurality of substrates W into the chemical treatment tank CB2 of the chemical treatment unit 52, but leaves the plurality of substrates W in the cleaning treatment unit 51 or the like. Difficult to produce areas of change.
若採用如此之構成，例如可處理在包含檢測部M4及冷卻箱Ct1之液體排出部EL1所產生之某種不良情況。又，例如在包含檢測部M4及冷卻箱Ct1之液體排出部EL1產生某種不良情況時，由於循環處理之執行被禁止，因此可避免基板W之蝕刻處理中不良情況的發生。According to such a configuration, for example, some kind of troubles generated in the liquid discharge part EL1 including the detection part M4 and the cooling tank Ct1 can be solved. In addition, for example, when a certain defect occurs in the liquid discharge unit EL1 including the detection unit M4 and the cooling box Ct1, the execution of the circulation process is prohibited, so that the occurrence of a defect in the etching process of the substrate W can be avoided.
又，例如可預設為如下之情形：於間隔期間液體補充處理中，間隔期間液體補充處理被執行之狀態因為由包含第3流量計M3之液體補充部AL1及包含冷卻箱Ct1之液體排出部EL1所產生之某種不良情況，而持續過長的時間。因此，例如控制部10亦可於間隔期間中，對間隔期間液體補充處理被執行之時間(亦稱為執行時間)到達第3既定時間P4之情形加以回應，而藉由輸出部9來發送第2警報。第3既定時間P4例如被設定為間隔期間液體補充處理所需要之通常會被預設之時間(亦稱為所需時間)之110~150%左右的時間。第2警報例如可應用既定之警告畫面之顯示及警告聲響之輸出等。對於如此之處理，可為控制部10分別對第1液體處理部5及第2液體處理部6之每個處理部進行之態樣。Also, for example, the following situation may be preset: in the interval liquid replenishment process, the state in which the interval liquid replenishment process is executed is due to the fact that the liquid replenishment part AL1 including the third flowmeter M3 and the liquid discharge part including the cooling tank Ct1 Some kind of adverse situation produced by EL1, and it lasts for too long. Therefore, for example, the control unit 10 may also respond to the fact that the time (also referred to as the execution time) of the liquid replenishment process during the interval period reaches the third predetermined time P4 during the interval period, and the output unit 9 sends the first 2 alerts. The third predetermined time P4 is set to, for example, about 110 to 150% of the usually preset time (also referred to as required time) required for the liquid replenishment process during the interval. For the second alarm, for example, the display of a predetermined warning screen and the output of a warning sound can be applied. Such processing may be an aspect in which the control unit 10 performs each processing unit of the first liquid processing unit 5 and the second liquid processing unit 6 .
圖12係用以說明關於間隔期間液體補充處理之執行時間之監視之動作的圖。圖12(a)表示間隔期間液體補充處理之執行時間之監視動作之時序圖之一例，而圖12(b)表示關於間隔期間液體補充處理之執行時間之監視動作之動作流程之一例的流程圖。本動作流程例如藉由控制部10對基板處理裝置100之各部分之動作進行控制所實現。Fig. 12 is a diagram for explaining the operation of monitoring the execution time of the liquid replenishment process during the interval. Fig. 12(a) shows an example of a timing chart of the monitoring operation of the execution time of the liquid replenishment process during the interval, and Fig. 12(b) shows a flow chart of an example of the operation flow of the monitoring operation of the execution time of the liquid replenishment process during the interval . This operation flow is realized, for example, by the control unit 10 controlling the operations of various parts of the substrate processing apparatus 100 .
如圖12(a)所示，例如可為對間隔期間液體補充處理之執行時間到達第3既定時間P4之情形加以回應，而輸出部9發送第2警報之態樣。As shown in FIG. 12( a ), for example, the output unit 9 may send a second alarm in response to the fact that the execution time of the liquid replenishment process reaches the third predetermined time P4 during the interval.
此處，例如藉由進行圖12(b)之步驟S61~S66之處理，間隔期間液體補充處理之執行時間的監視動作可被執行。Here, for example, by performing the processing of steps S61 to S66 in FIG. 12( b ), the monitoring operation of the execution time of the liquid replenishment processing during the interval can be executed.
在步驟S61中，控制部10判定間隔期間液體補充處理是否已由液體補充部AL1所開始。此處，重複進行步驟S61之判定直至間隔期間液體補充處理開始為止，若間隔期間液體補充處理開始，便前進至步驟S62。In step S61, the control unit 10 determines whether or not the liquid replenishment process has been started by the liquid replenishment unit AL1 during the interval. Here, the determination of step S61 is repeated until the liquid replenishment process starts during the interval, and when the liquid replenishment process starts during the interval, the process proceeds to step S62.
在步驟S62中，控制部10開始進行用以對第3既定時間P4之經過進行計測之計數的處理(亦稱為第3計數處理)。In step S62, the control part 10 starts the counting process (also called a 3rd counting process) for measuring the elapse of the 3rd predetermined time P4.
在步驟S63中，控制部10判定間隔期間液體補充處理是否已結束。此處，若間隔期間液體補充處理尚未結束，便前進至步驟S64。另一方面，若間隔期間液體補充處理已結束，便返回步驟S61。In step S63, the control unit 10 determines whether or not the liquid replenishment process has ended during the interval. Here, if the liquid replenishment process has not been completed during the interval, the process proceeds to step S64. On the other hand, if the liquid replenishment process has ended during the interval, the process returns to step S61.
在步驟S64中，控制部10判定自第3計數處理開始後是否已經過第3既定時間P4。此處，若自第3計數處理開始後尚未經過第3既定時間P4，便返回步驟S63。另一方面，若自第3計數處理開始後已經過第3既定時間P4，便前進至步驟S65。In step S64, the control part 10 determines whether the 3rd predetermined time P4 has elapsed since the 3rd count process started. Here, if the third predetermined time P4 has not elapsed since the start of the third counting process, the process returns to step S63. On the other hand, if the third predetermined time P4 has elapsed since the start of the third count process, the process proceeds to step S65.
在步驟S65中，控制部10藉由輸出部9使第2警報之發送進行。In step S65 , the control unit 10 transmits the second alarm through the output unit 9 .
在步驟S66中，控制部10設定為間隔期間液體補充處理及循環處理之執行被禁止之狀態(處理禁止狀態)。此時，例如控制部10可為不將複數片基板W投入藥液處理部52之藥液處理槽CB2，而將其等留置在洗淨處理部51等之複數片基板W難以產生變化的區域。In step S66, the control unit 10 sets a state in which the execution of the liquid replenishment process and the circulation process is prohibited during the interval (process prohibition state). In this case, for example, the control unit 10 may not put the plurality of substrates W into the chemical solution treatment tank CB2 of the chemical solution treatment unit 52, but leave them in an area where the plurality of substrates W such as the cleaning treatment unit 51 is unlikely to change. .
若採用如此之構成，便可處理例如因液體補充部AL1及包含冷卻箱Ct1之液體排出部EL1所產生之某種不良情況。又，例如於因液體補充部AL1及包含冷卻箱Ct1之液體排出部EL1而產生某種不良情況時，由於循環處理之執行被禁止，因此可避免基板W之蝕刻處理中不良情況的發生。According to such a structure, it is possible to deal with certain troubles caused by, for example, the liquid supply part AL1 and the liquid discharge part EL1 including the cooling tank Ct1. Also, for example, when some trouble occurs in the liquid replenishment unit AL1 and the liquid discharge unit EL1 including the cooling tank Ct1, execution of the circulation process is prohibited, so that troubles in the etching process of the substrate W can be avoided.
＜1-3-3-2. 循環處理之監視＞ 例如亦可為，控制部10若於檢測步驟中被貯存在冷卻箱Ct1之液體的貯存量已到達作為第1臨限值之第3貯存量Lv3之情形藉由檢測部M4所檢測出，便禁止由藥液處理槽CB2所進行之對基板W之蝕刻處理的執行。對於如此之處理，可為控制部10分別對第1液體處理部5及第2液體處理部6之每個處理部進行之態樣。若採用如此之構成，例如可抑制於對基板W實施蝕刻處理時，無法將使用完畢磷酸水溶液自藥液處理槽CB2排出至液體排出部EL1而在蝕刻處理中產生不良情況之發生。 <1-3-3-2. Monitoring of cycle processing> For example, if the control unit 10 detects by the detection unit M4 that the storage volume of the liquid stored in the cooling tank Ct1 has reached the third storage volume Lv3 as the first threshold value in the detection step, then Execution of the etching process on the substrate W by the chemical solution processing tank CB2 is prohibited. Such processing may be an aspect in which the control unit 10 performs each processing unit of the first liquid processing unit 5 and the second liquid processing unit 6 . According to such a configuration, for example, when the substrate W is etched, the used phosphoric acid aqueous solution cannot be discharged from the chemical treatment tank CB2 to the liquid discharge part EL1, which would cause a problem in the etching process.
圖13係用以說明依據冷卻箱Ct1之貯存量之監視結果之循環處理之禁止之動作的圖。圖13(a)表示依據冷卻箱Ct1之貯存量之監視結果之循環處理之禁止之時序圖之一例，而圖13(b)表示關於依據冷卻箱Ct1之貯存量之監視結果之循環處理之禁止之動作流程之一例的流程圖。本動作流程例如藉由控制部10對基板處理裝置100之各部分之動作進行控制所實現。FIG. 13 is a diagram for explaining the prohibition operation of the cyclic process based on the monitoring result of the storage amount of the cooling tank Ct1. Fig. 13(a) shows an example of a timing chart of prohibition of cyclic processing based on the monitoring result of the storage capacity of the cooling box Ct1, and Fig. 13(b) shows prohibition of cyclic processing based on the monitoring result of the storage capacity of the cooling tank Ct1. A flow chart of an example of the operation flow. This operation flow is realized, for example, by the control unit 10 controlling the operations of various parts of the substrate processing apparatus 100 .
如圖13(a)所示，可為如下之態樣：於時刻t6d中，在開始進行循環處理時，若被貯存於冷卻箱Ct1之液體的貯存量已到達作為第1臨限值之第3貯存量Lv3，輸出部9便發送第3警報，並且被設定為循環處理之執行被禁止的狀態(處理禁止狀態)。然後，藉由操作人員等所進行的處理，在由輸出部9所進行之第3警報的發送及處理禁止狀態被解除後，開始循環處理之執行。As shown in FIG. 13(a), it may be as follows: at time t6d, when the circulation process is started, if the storage amount of the liquid stored in the cooling tank Ct1 has reached the first threshold value 3 The storage volume Lv3, the output unit 9 sends a third alarm, and is set in a state in which the execution of the loop processing is prohibited (processing prohibited state). Then, by the processing performed by the operator, etc., after the transmission of the third alarm by the output unit 9 and the release of the processing prohibition state, the execution of the loop processing is started.
此處，例如藉由進行圖13(b)之步驟S71~S75之處理，可執行依據冷卻箱Ct1之貯存量之監視結果之循環處理之禁止的動作。Here, for example, by performing the processing of steps S71 to S75 in FIG. 13( b ), it is possible to execute the prohibition of the loop processing based on the monitoring result of the storage amount of the cooling tank Ct1.
在步驟S71中，控制部10根據由排程部所製作之行程來判定是否為開始進行循環處理之時間點。此處，控制部10重複進行步驟S71之判定直至成為開始進行循環處理之時間點為止，若成為開始進行循環處理之時間點，便前進至步驟S72。In step S71 , the control unit 10 determines whether it is the time to start the loop process based on the itinerary created by the scheduling unit. Here, the control part 10 repeats the determination of step S71 until it becomes the time to start loop processing, and when it becomes the time to start loop processing, it progresses to step S72.
在步驟S72中，控制部10藉由檢測部M4來判定被貯存在冷卻箱Ct1之液體的貯存量是否已到達作為第1臨限值之第3貯存量Lv3。此處，若液體的貯存量尚未到達第3貯存量Lv3，便在步驟S75執行循環處理，並返回至步驟S71。另一方面，若液體的貯存量已到達第3貯存量Lv3，便前進至步驟S73。In step S72, the control part 10 judges whether the storage amount of the liquid stored in the cooling tank Ct1 has reached the 3rd storage amount Lv3 which is a 1st threshold value by the detection part M4. Here, if the storage amount of the liquid has not yet reached the third storage amount Lv3, a loop process is executed in step S75, and the process returns to step S71. On the other hand, if the storage amount of the liquid has reached the third storage amount Lv3, the process proceeds to step S73.
在步驟S73中，控制部10藉由輸出部9使第3警報之發送進行。In step S73 , the control unit 10 transmits the third alarm through the output unit 9 .
在步驟S74中，控制部10設定為循環處理之執行被禁止之處理執行禁止狀態。此時，例如可為如下之態樣：控制部10不將複數片基板W投入藥液處理部52之藥液處理槽CB2，而將其等留置在洗淨處理部51等之複數片基板W難以產生變化的區域。In step S74, the control unit 10 sets the processing execution prohibited state in which the execution of the loop processing is prohibited. In this case, for example, the control unit 10 does not put the plurality of substrates W into the chemical treatment tank CB2 of the chemical treatment unit 52, but leaves them in the plurality of substrates W in the cleaning treatment unit 51 and the like. Difficult to produce areas of change.
若採用如此之構成，便可處理例如因包含冷卻箱Ct1之液體排出部EL1所產生之某種不良情況。又，例如在因包含檢測部M4及冷卻箱Ct1之液體排出部EL1而產生某種不良情況時，由於循環處理之執行被禁止，因此可避免基板W之蝕刻處理中不良情況的發生。According to such a structure, it is possible to deal with certain troubles caused by, for example, the liquid discharge part EL1 including the cooling tank Ct1. Also, for example, when a problem occurs in the liquid discharge unit EL1 including the detection unit M4 and the cooling tank Ct1, execution of the circulation process is prohibited, so that a problem in the etching process of the substrate W can be avoided.
＜2. 第1實施形態之總結＞ 如以上所述，根據第1實施形態之基板處理裝置100，例如在將作為第1處理液之使用完畢磷酸水溶液自作為處理部之藥液處理槽CB2排出至基板處理裝置100外時，將基板成分(例如矽)之溶解濃度相對較低之作為第2處理液之使用前磷酸水溶液混合於該使用完畢磷酸水溶液。藉此，例如於將作為處理液之磷酸水溶液自作為處理部之藥液處理槽CB2朝向基板處理裝置100外排出之路徑中，作為處理液之磷酸水溶液中來自基板W的溶出成分之結晶化(例如矽氧烷之結晶化)會難以發生。 ＜2. Summary of the first embodiment＞ As described above, according to the substrate processing apparatus 100 of the first embodiment, for example, when the used phosphoric acid aqueous solution as the first processing liquid is discharged out of the substrate processing apparatus 100 from the chemical solution processing tank CB2 as the processing part, the substrate is removed. The pre-use phosphoric acid aqueous solution as the second treatment liquid having a relatively low dissolved concentration of components (such as silicon) is mixed with the used phosphoric acid aqueous solution. Thereby, for example, in the path for discharging the phosphoric acid aqueous solution as the processing liquid from the chemical solution processing tank CB2 as the processing part toward the outside of the substrate processing apparatus 100, crystallization ( For example, the crystallization of siloxane) will be difficult to occur.
＜3. 變形例＞ 本發明並非被限定於上述之第1實施形態者，可於不脫離本發明之主旨的範圍內進行各種變更、改良等。 ＜3. Modifications＞ The present invention is not limited to the above-mentioned first embodiment, and various changes, improvements, etc. can be made within the range not departing from the gist of the present invention.
例如，亦可於上述第1實施形態中，對循環處理之執行時間點、及液體補充部AL1將作為第2處理液之使用前磷酸水溶液朝向液體排出部EL1進行補充之處理(液體補充處理)的執行時間點進行各種變更。For example, in the above-mentioned first embodiment, the execution timing of the circulation process and the process of replenishing the pre-used phosphoric acid aqueous solution as the second processing liquid to the liquid discharge part EL1 by the liquid replenishment part AL1 (liquid replenishment process) may also be performed. Various changes are made at the execution time point.
圖14係循環處理及液體補充處理之執行時間點之變化的時序圖。圖14(a)係關於上述第1實施形態之循環處理之執行以及液體補充處理之執行的時序圖。液體補充處理包含有間隔期間液體補充處理及循環處理之液體補充處理。圖14(b)及圖14(c)係關於第1變形例之循環處理之執行以及液體補充處理之執行的時序圖。FIG. 14 is a timing chart showing changes in execution timing of cycle processing and liquid replenishment processing. Fig. 14(a) is a timing chart of the execution of the loop processing and the execution of the liquid replenishment processing in the above-mentioned first embodiment. The liquid replenishment process includes the liquid replenishment process of the interval liquid replenishment process and the circulation process. 14( b ) and FIG. 14( c ) are timing charts of the execution of the loop processing and the execution of the liquid replenishment processing in the first modified example.
在圖14(a)之例子中，藉由控制部10，不在進行循環處理之期間進行間隔期間液體補充處理，並在藥液處理部52未進行循環處理之間隔期間中，在每經過第1既定時間P2時進行間隔期間液體補充處理。In the example of FIG. 14( a), by the control unit 10, the liquid replenishment process is not performed during the interval period during which the circulation process is performed, and during the interval period when the liquid medicine processing unit 52 is not performing the circulation process, every 1st Interval fluid supplementation was performed at a given time P2.
在圖14(b)及圖14(c)之例子中，藉由控制部10，於執行循環處理時不進行液體補充處理，且不管有無執行循環處理，在每經過第1既定時間P2時進行間隔期間液體補充處理。然而，於該情形時，亦可如圖14(c)所示，若在循環處理之執行中，則即便已經過第1既定時間P2仍不進行間隔期間液體補充處理，而在回應循環處理之結束，再執行間隔期間液體補充處理。In the example of Fig. 14(b) and Fig. 14(c), by the control unit 10, the liquid replenishment process is not performed when the circulation process is executed, and the liquid replenishment process is performed every time the first predetermined time P2 passes regardless of whether the cycle process is executed or not. Fluid supplementation during intervals. However, in this case, as shown in FIG. 14( c), if the cyclic processing is in progress, even if the first predetermined time P2 has passed, the liquid replenishment processing during the interval is not performed, and after the cyclic processing is responded to After the end, execute the liquid replenishment process during the interval again.
圖15係表示循環處理及液體補充處理之執行時間點之第1變形例之動作流程之一例的流程圖。本動作流程例如藉由控制部10對基板處理裝置100之各部分之動作進行控制所實現。FIG. 15 is a flowchart showing an example of an operation flow of the first modification example at execution timings of circulation processing and liquid replenishment processing. This operation flow is realized, for example, by the control unit 10 controlling the operations of various parts of the substrate processing apparatus 100 .
此處，例如藉由進行圖15之步驟S81~S86之處理來執行第1變形例之液體補充處理。Here, for example, the liquid replenishment process of the first modification is executed by performing the processes of steps S81 to S86 in FIG. 15 .
在步驟S81中，控制部10開始進行第1計數處理，該第1計數處理係進行用以對第1既定時間P2的經過進行計測之計數者。In step S81, the control part 10 starts the 1st count process which performs the count for measuring the elapse of the 1st predetermined time P2.
在步驟S82中，控制部10判定自第1計數處理開始後是否已經過第1既定時間P2。此處，控制部10重複進行步驟S82之判定直至自第1計數處理開始後經過第1既定時間P2為止，若經過第1既定時間P2，便前進至步驟S83。In step S82, the control unit 10 determines whether or not a first predetermined time P2 has elapsed since the start of the first counting process. Here, the control unit 10 repeats the determination of step S82 until the first predetermined time P2 elapses from the start of the first counting process, and proceeds to step S83 when the first predetermined time P2 elapses.
在步驟S83中，控制部10判定藥液處理槽CB2中之循環處理是否為執行中。此處，若循環處理為執行中，控制部10便重複進行步驟S83之判定，若循環處理並非執行中，便前進至步驟S84。In step S83, the control unit 10 determines whether or not the circulation process in the chemical solution processing tank CB2 is being executed. Here, if the loop processing is being executed, the control unit 10 repeats the determination of step S83, and if the loop processing is not being executed, it proceeds to step S84.
在步驟S84中，控制部10使由液體補充部AL1所進行之間隔期間液體補充處理開始進行。此時，例如第9配管部Tb9之流路藉由第9閥V9所適當地開放，藉此使混合磷酸水溶液自冷卻箱Ct1被送出至處理液輸出部Ex0。In step S84, the control unit 10 starts the interval liquid replenishment process by the liquid replenishment unit AL1. At this time, for example, the flow path of the ninth piping part Tb9 is appropriately opened by the ninth valve V9, whereby the mixed phosphoric acid aqueous solution is sent out from the cooling tank Ct1 to the processing liquid output part Ex0.
在步驟S85中，控制部10判定間隔期間液體補充處理中處理前磷酸水溶液自液體補充部AL1朝向液體排出部EL1之補充量是否已到達既定量。此處，控制部10重複進行步驟S85之處理直至補充量到達既定量為止，若補充量到達既定量，便在步驟S86使間隔期間液體補充處理結束，並返回至步驟S81。In step S85, the control unit 10 determines whether or not the replenishment amount of the phosphoric acid aqueous solution before treatment from the liquid replenishment portion AL1 toward the liquid discharge portion EL1 has reached a predetermined amount in the liquid replenishment process during the interval period. Here, the control unit 10 repeats the process of step S85 until the replenishment amount reaches the predetermined amount, and when the replenishment amount reaches the predetermined amount, the interval liquid replenishment process ends in step S86 and returns to step S81.
又，例如亦可於上述第1實施形態及上述第1變形例中，例如如圖16所示般，使藥液處理部52中之液體排出部EL1置換為自該液體排出部EL1中去除掉冷卻箱Ct1的液體排出部EL1A。於該情形時，例如於液體排出管部Tg1，將自液體補充部AL1所補充之作為第2處理液之使用前磷酸水溶液混合於自藥液處理槽CB2所排出之作為第1處理液之使用完畢磷酸水溶液，藉此生成混合溶液(混合磷酸水溶液)。在圖16之例子中，以第7配管部Tb7、第8配管部Tb8與第9配管部Tb9直接地連通之方式進行連接。Also, for example, in the above-mentioned first embodiment and the above-mentioned first modified example, for example, as shown in FIG. Liquid discharge part EL1A of cooling tank Ct1. In this case, for example, in the liquid discharge pipe part Tg1, the phosphoric acid aqueous solution before use as the second treatment liquid replenished from the liquid replenishment part AL1 is mixed with the used phosphoric acid solution discharged from the chemical liquid treatment tank CB2 as the first treatment liquid. The phosphoric acid aqueous solution is completed, whereby a mixed solution (mixed phosphoric acid aqueous solution) is generated. In the example of FIG. 16, the 7th piping part Tb7, the 8th piping part Tb8, and the 9th piping part Tb9 are connected so that they may communicate directly.
又，例如本發明並不限於如上述第1實施形態之基板處理裝置100般之批次式的基板處理裝置，亦可應用於對每一片基板W，將處理液自噴嘴吐出至基板W而對基板W實施使用處理液之蝕刻處理之所謂單片式的基板處理裝置。圖17係表示單片式的基板處理裝置中藥液處理部52B之構成之一例的圖。如圖17所示般，藥液處理部52B具備有液體供給部SL2B、藥液處理單元CP2、液體排出部EL1B及液體補充部AL1B。Also, for example, the present invention is not limited to a batch-type substrate processing apparatus like the substrate processing apparatus 100 of the above-mentioned first embodiment, and can also be applied to each substrate W, and the processing liquid is discharged from the nozzle to the substrate W to process the substrate W. The substrate W is a so-called single-wafer type substrate processing apparatus in which an etching process using a processing liquid is performed. FIG. 17 is a diagram showing an example of the configuration of a chemical solution processing unit 52B in a single-wafer substrate processing apparatus. As shown in FIG. 17 , the chemical solution processing unit 52B includes a liquid supply unit SL2B, a chemical solution processing unit CP2, a liquid discharge unit EL1B, and a liquid replenishment unit AL1B.
液體供給部SL2B例如可執行將作為蝕刻液而發揮功能之作為處理液的使用前磷酸水溶液供給至作為處理部之藥液處理單元CP2的處理(液體供給處理)。該液體供給部SL2B例如具有作為液體供給管部之第4配管部Tb4，可將自處理液供給源En0送來之磷酸水溶液經由第4配管部Tb4供給至藥液處理單元CP2。於第4配管部Tb4設置有第2流量控制部Cf2。第2流量控制部Cf2例如具有將磷酸水溶液之流路加以開閉的第4閥V4、及對磷酸水溶液之流量進行計測之第2流量計M2。在液體供給部SL2B中，例如自處理液供給源En0所供給之磷酸水溶液，通過第4配管部Tb4而以由第2流量控制部Cf2所設定之流量被供給至藥液處理單元CP2之噴嘴50。The liquid supply part SL2B can perform the process (liquid supply process) of supplying the pre-use phosphoric acid aqueous solution as a processing liquid which functions as an etching liquid, for example, to the chemical liquid processing unit CP2 which is a processing part. The liquid supply part SL2B has, for example, a fourth piping part Tb4 as a liquid supply pipe part, and can supply the phosphoric acid aqueous solution sent from the processing liquid supply source En0 to the chemical solution processing unit CP2 through the fourth piping part Tb4. The 2nd flow control part Cf2 is provided in the 4th piping part Tb4. The 2nd flow rate control part Cf2 has the 4th valve V4 which opens and closes the flow path of phosphoric acid aqueous solution, and the 2nd flowmeter M2 which measures the flow rate of phosphoric acid aqueous solution, for example. In the liquid supply part SL2B, for example, the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 is supplied to the nozzle 50 of the chemical liquid processing unit CP2 at the flow rate set by the second flow control part Cf2 through the fourth piping part Tb4. .
藥液處理單元CP2例如為藉由作為蝕刻液而發揮功能之作為處理液的磷酸水溶液來進行對基板W之蝕刻處理的部分(處理部)。藥液處理單元CP2例如具有保持部30、旋轉機構40及噴嘴50。保持部30例如將基板W以大致水平姿勢加以保持並使其旋轉。保持部30例如可應用具有可對基板W之上表面Us1之相反的另一主表面(亦稱為下表面)Bs1進行真空吸著之上表面30f的真空夾頭、或具有可夾持基板W之周緣部之複數個夾頭銷之夾持式的夾頭等。旋轉機構40使保持部30旋轉。旋轉機構40例如可應用如下之構成：具有於上端部連結有保持部30且沿著鉛直方向延伸之旋轉支軸40s、及具有可使旋轉支軸40s以沿著鉛直方向之虛擬的旋轉軸Ax1為中心旋轉之馬達等的旋轉驅動部40m。此處，例如旋轉支軸40s藉由旋轉驅動部40m而以旋轉軸Ax1為中心被旋轉，藉此使保持部30在大致水平面內被旋轉。藉此，例如被保持在保持部30上之基板W，會以旋轉軸Ax1為中心被旋轉。噴嘴50例如可朝向被保持在保持部30之基板W吐出作為處理液之磷酸水溶液。The chemical solution processing unit CP2 is, for example, a portion (processing unit) that performs an etching process on the substrate W using a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid. The chemical solution processing unit CP2 includes, for example, a holding unit 30 , a rotation mechanism 40 , and a nozzle 50 . The holding unit 30 holds and rotates the substrate W in a substantially horizontal posture, for example. The holding part 30 can be, for example, a vacuum chuck having an upper surface 30f capable of vacuum-adsorbing the other main surface (also referred to as the lower surface) Bs1 opposite to the upper surface Us1 of the substrate W, or a vacuum chuck capable of holding the substrate W. The clamping chucks of multiple chuck pins on the peripheral part of the ring, etc. The rotation mechanism 40 rotates the holding part 30 . For example, the rotation mechanism 40 can be configured to have a rotation support shaft 40s extending in the vertical direction with the holding portion 30 connected to the upper end thereof, and a virtual rotation axis Ax1 that allows the rotation support shaft 40s to extend in the vertical direction. It is 40m of the rotation driving part such as the motor which rotates in the center. Here, for example, the rotation support shaft 40s is rotated about the rotation axis Ax1 by the rotation drive part 40m, whereby the holding part 30 is rotated in a substantially horizontal plane. Thereby, for example, the substrate W held on the holding portion 30 is rotated about the rotation axis Ax1. The nozzle 50 can discharge, for example, an aqueous phosphoric acid solution as a processing liquid toward the substrate W held by the holding unit 30 .
液體排出部EL1B例如為執行如下之處理(液體排出處理)的部分：將作為處理部之藥液處理單元CP2中被使用於對基板W之蝕刻處理後之作為處理液(第1處理液)之磷酸水溶液(使用完畢磷酸水溶液)自藥液處理單元CP2排出至基板處理裝置外。液體排出部EL1B例如具有包含第8配管部Tb8之液體排出管部Tg1。第8配管部Tb8例如具有以連通於藥液處理單元CP2之下部之方式進行連接的第1端部、及以對於處理液輸出部Ex0連通之目的加以連接的第2端部。The liquid discharge unit EL1B is, for example, a part that executes a process (liquid discharge process) in which the processing liquid (first processing liquid) used in the chemical liquid processing unit CP2 as the processing part after the etching process on the substrate W is used. Phosphoric acid aqueous solution (used phosphoric acid aqueous solution) is discharged from the chemical solution processing unit CP2 to the outside of the substrate processing apparatus. The liquid discharge part EL1B has the liquid discharge pipe part Tg1 containing the 8th piping part Tb8, for example. The eighth piping part Tb8 has, for example, a first end connected to communicate with the lower part of the chemical solution processing unit CP2 and a second end connected to the processing liquid output part Ex0.
液體補充部AL1B例如可執行將作為第2處理液之使用前磷酸水溶液自處理液供給源En0補充至液體排出部EL1B之處理(液體補充處理)。藉此，生成將作為第1處理液之使用完畢磷酸水溶液與作為第2處理液之使用前磷酸水溶液加以混合之作為混合溶液的磷酸水溶液(亦稱為混合磷酸水溶液)。此處，由於例如使用前磷酸水溶液之基板成分(例如矽)的溶解濃度處於較使用完畢磷酸水溶液更低之狀態，因此混合磷酸水溶液成為基板成分(例如矽)之溶解濃度較使用完畢磷酸水溶液更低之狀態。此處，液體補充部AL1B例如具有被連接於液體排出部EL1B之作為液體補充管部之第11配管部Tb11。第11配管部Tb11例如具有被連接於處理液供給源En0之第1端部、及以合流於第8配管部Tb8般之形態連通之目的加以連接之第2端部。於第11配管部Tb11設置有第3流量控制部Cf3。第3流量控制部Cf3例如具有將第11配管部Tb11之流路加以開閉之第10閥V10、及對磷酸水溶液之流量進行計測之第3流量計M3。The liquid replenishment part AL1B can perform the process (liquid replenishment process) of replenishing the pre-use phosphoric acid aqueous solution which is a 2nd processing liquid from the processing liquid supply source En0 to the liquid discharge part EL1B, for example. Thereby, the phosphoric acid aqueous solution (also called mixed phosphoric acid aqueous solution) as a mixed solution which mixes the used phosphoric acid aqueous solution which is a 1st treatment liquid, and the pre-use phosphoric acid aqueous solution which is a 2nd treatment liquid is produced. Here, since, for example, the dissolved concentration of the substrate component (such as silicon) in the phosphoric acid aqueous solution before use is in a state lower than that of the finished phosphoric acid aqueous solution, the dissolved concentration of the substrate component (such as silicon) mixed with the phosphoric acid aqueous solution is higher than that of the used phosphoric acid aqueous solution. low state. Here, liquid replenishment part AL1B has 11th piping part Tb11 as a liquid replenishment pipe part connected to liquid discharge part EL1B, for example. The eleventh piping portion Tb11 has, for example, a first end portion connected to the processing liquid supply source En0, and a second end portion connected for the purpose of being connected so as to merge with the eighth piping portion Tb8. The 3rd flow control part Cf3 is provided in the 11th piping part Tb11. The 3rd flow control part Cf3 has the 10th valve V10 which opens and closes the flow path of the 11th piping part Tb11, and the 3rd flowmeter M3 which measures the flow rate of phosphoric acid aqueous solution, for example.
又，例如亦可於上述第1實施形態及各變形例中，使用以對第2液體供給部SL2及液體供給部SL2B供給處理液之處理液供給源En0、及用以對液體補充部AL1供給第2處理液之處理液供給源En0設為不同系統的處理液供給源。於該情形時，供給至第2液體供給部SL2及液體供給部SL2B之處理液，例如亦可為被調整為含有某程度基板成分者。又，例如亦可於調整槽SB1中，使供給至第2液體供給部SL2之處理液含有基板成分某種的程度。又，就不同觀點而言，例如被供給至液體補充部AL1之第2處理液之基板成分的溶解濃度亦可較被供給至第2液體供給部SL2及液體供給部SL2B之處理液之基板成分的溶解濃度更低。Also, for example, in the above-mentioned first embodiment and each modification, the processing liquid supply source En0 for supplying the processing liquid to the second liquid supply part SL2 and the liquid supply part SL2B, and the processing liquid supply source En0 for supplying the processing liquid to the liquid replenishment part AL1 can also be used. The processing liquid supply source En0 of the second processing liquid is used as a processing liquid supply source of a different system. In this case, for example, the processing liquid supplied to the second liquid supply part SL2 and the liquid supply part SL2B may be adjusted to contain a certain level of substrate components. In addition, for example, in the adjustment tank SB1, the processing liquid supplied to the second liquid supply part SL2 may contain the substrate component to a certain extent. Also, from a different point of view, for example, the dissolved concentration of the substrate component in the second processing liquid supplied to the liquid replenishment part AL1 may also be higher than that of the substrate component in the processing liquid supplied to the second liquid supply part SL2 and the liquid supply part SL2B. lower dissolved concentration.
當然，亦可將分別構成上述一實施形態及各種變形例之所有或一部分適當地且在不相互矛盾之範圍內加以組合。Of course, it is also possible to appropriately combine all or a part of each of the aforementioned one embodiment and various modified examples within a range that does not contradict each other.
1:投入部 2:第1搬送部 3:第2搬送部 4:乾燥處理部 5:第1液體處理部 6:第2液體處理部 7:送出部 8:輸入部 9:輸出部 10:控制部 10a:運算部 10b:記憶體 10c:儲存部 10d:計時器 11:載置台 30:保持部 30f:上表面 40:旋轉機構 40m:旋轉驅動部 40s:旋轉支軸 50:噴嘴 51:洗淨處理部 52、52B:藥液處理部 52s:感測器部 53:副搬送部 71:載置台 100:基板處理裝置 AL1、AL1B:液體補充部 Ax1:旋轉軸 B1a:第1內槽 B1b:第1外槽 B2a:第2內槽 B2b:第2外槽 Bs1:下表面 C1:匣盒 CB1:調整槽 CB2:藥液處理槽 Cf1:第1流量控制部 Cf2:第2流量控制部 Cf3:第3流量控制部 CL1:第1液體循環部 CL2:第2液體循環部 CP2:藥液處理單元 Ct1:冷卻箱 EL1、EL1A、EL1B:液體排出部 En0:處理液供給源 Ex0:處理液輸出部 Fl1:過濾器 Fr0、Fr1:流量 Ht1:第1加熱器 Ht2:第2加熱器 LF2:升降機 Lv1~Lv4:第1~4貯存量 M1:第1流量計 M2:第2流量計 M3:第3流量計 M4:檢測部 P0、P0s、P1:期間 P2~P4:第1~3既定時間 Pm1:第1泵 Pm2:第2泵 SB1:調整槽 SL1:第1液體供給部 SL2:第2液體供給部 SL2B:液體供給部 t0a~t0d、t1a~t1b、t3a~t3f、t4a~t4e、t6a~t6g:時刻 Tb1~Tb11:第1~11配管部 Tg1:液體排出管部 Us1:上表面 V1~V10:第1~10閥 W:基板 1: Input Department 2: The first conveying department 3: The second conveying department 4: Drying processing department 5: The first liquid processing department 6: The second liquid processing department 7: Sending Department 8: Input part 9: Output section 10: Control Department 10a: Computing department 10b: memory 10c: storage department 10d: Timer 11: Carrying table 30: Keeping Department 30f: upper surface 40: Rotary mechanism 40m: Rotary drive unit 40s: Rotate the fulcrum 50: Nozzle 51: Cleaning and processing department 52, 52B: Chemical solution processing department 52s: Sensor Department 53: Assistant Transport Department 71: Carrying table 100: Substrate processing device AL1, AL1B: Liquid supplement department Ax1: axis of rotation B1a: 1st inner tank B1b: 1st outer tank B2a: The second inner tank B2b: The second outer tank Bs1: lower surface C1: Cassette CB1: adjustment slot CB2: liquid medicine treatment tank Cf1: 1st Flow Control Department Cf2: 2nd Flow Control Department Cf3: 3rd flow control department CL1: 1st Liquid Circulation Department CL2: 2nd Liquid Circulation Department CP2: liquid medicine processing unit Ct1: cooling box EL1, EL1A, EL1B: Liquid discharge part En0: Processing liquid supply source Ex0: Processing liquid output part Fl1: filter Fr0, Fr1: flow rate Ht1: 1st heater Ht2: 2nd heater LF2: lift Lv1~Lv4: 1st~4th storage M1: 1st flow meter M2: 2nd flow meter M3: 3rd flow meter M4: Detection Department P0, P0s, P1: period P2~P4: 1st~3rd scheduled time Pm1: 1st pump Pm2: 2nd pump SB1: adjustment slot SL1: The first liquid supply part SL2: The second liquid supply part SL2B: Liquid supply part t0a~t0d, t1a~t1b, t3a~t3f, t4a~t4e, t6a~t6g: time Tb1~Tb11: No. 1~11 piping parts Tg1: Liquid discharge pipe Us1: upper surface V1~V10: 1st~10th valve W: Substrate
圖1係表示第1實施形態之基板處理裝置之概略性構成的俯視圖。 圖2係表示第1實施形態之基板處理裝置之功能性構成的方塊圖。 圖3係表示藥液處理部之概略性構成的圖。 圖4係表示蝕刻處理之動作流程之一例的流程圖。 圖5(a)及(b)係前處理之動作之一例的時序圖。 圖6(a)及(b)係主處理之動作之一例的時序圖。 圖7係表示主處理之動作流程之一例的流程圖。 圖8(a)及(b)係用以說明間隔期間液體補充處理之動作的圖。 圖9係用以說明冷卻箱中成為監視之對象之貯存量的圖。 圖10(a)及(b)係用以說明依據冷卻箱之貯存量之監視結果所進行之間隔期間液體補充處理之動作的圖。 圖11(a)及(b)係用以說明間隔期間液體補充處理之不執行期間之監視之動作的圖。 圖12(a)及(b)係用以說明間隔期間液體補充處理之執行時間之監視之動作的圖。 圖13(a)及(b)係用以說明依據冷卻箱之貯存量之監視結果所進行之循環處理之禁止之動作的圖。 圖14(a)至(c)係循環處理及液體補充處理之執行時間點之變化的時序圖。 圖15係表示循環處理及液體補充處理之執行時間點之第1變形例之動作流程之一例的圖。 圖16係表示一變形例之藥液處理部之概略性構成的圖。 圖17係表示一變形例之單片式基板處理裝置中藥液處理部之構成之一例的圖。 FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to a first embodiment. Fig. 2 is a block diagram showing the functional configuration of the substrate processing apparatus according to the first embodiment. Fig. 3 is a diagram showing a schematic configuration of a chemical solution processing unit. FIG. 4 is a flow chart showing an example of an operation flow of an etching process. 5(a) and (b) are timing charts of an example of the operation of the pre-processing. 6 (a) and (b) are timing charts of an example of the operation of the main processing. FIG. 7 is a flowchart showing an example of the flow of operation of the main processing. 8( a ) and ( b ) are diagrams for explaining the operation of the liquid replenishment process during the interval. Fig. 9 is a diagram for explaining the storage amount to be monitored in the cooling box. 10( a ) and ( b ) are diagrams for explaining the operation of liquid replenishment processing at intervals based on the monitoring results of the storage capacity of the cooling tank. 11( a ) and ( b ) are diagrams for explaining the monitoring operation during the non-execution period of the liquid replenishment process during the interval period. 12( a ) and ( b ) are diagrams for explaining the operation of monitoring the execution time of the liquid replenishment process during the interval. 13( a ) and ( b ) are diagrams for explaining the prohibition operation of the cycle processing based on the monitoring result of the storage amount of the cooling box. 14( a ) to ( c ) are timing charts of changes in execution time points of cycle processing and liquid replenishment processing. FIG. 15 is a diagram showing an example of an operation flow of the first modification example at execution timings of circulation processing and liquid replenishment processing. Fig. 16 is a diagram showing a schematic configuration of a chemical solution processing unit according to a modified example. FIG. 17 is a diagram showing an example of the configuration of a chemical solution processing unit in a single-wafer substrate processing apparatus according to a modified example.
10:控制部 10: Control Department
52:藥液處理部 52: Chemical solution processing department
AL1:液體補充部 AL1: Liquid supplement department
B1a:第1內槽 B1a: 1st inner tank
B1b:第1外槽 B1b: 1st outer tank
B2a:第2內槽 B2a: The second inner tank
B2b:第2外槽 B2b: The second outer tank
CB1:調整槽 CB1: adjustment slot
CB2:藥液處理槽 CB2: liquid medicine treatment tank
Cf1:第1流量控制部 Cf1: 1st Flow Control Department
Cf2:第2流量控制部 Cf2: 2nd Flow Control Department
Cf3:第3流量控制部 Cf3: 3rd flow control department
CL1:第1液體循環部 CL1: 1st Liquid Circulation Department
CL2:第2液體循環部 CL2: 2nd Liquid Circulation Department
Ct1:冷卻箱 Ct1: cooling box
EL1:液體排出部 EL1: Liquid discharge part
En0:處理液供給源 En0: Processing liquid supply source
Ex0:處理液輸出部 Ex0: Processing liquid output part
F11:過濾器 F11: filter
Ht1:第1加熱器 Ht1: 1st heater
Ht2:第2加熱器 Ht2: 2nd heater
LF2:升降機 LF2: lift
M1:第1流量計 M1: 1st flow meter
M2:第2流量計 M2: 2nd flow meter
M3:第3流量計 M3: 3rd flow meter
M4:檢測部 M4: Detection Department
Pm1:第1泵 Pm1: 1st pump
Pm2:第2泵 Pm2: 2nd pump
SL1:第1液體供給部 SL1: The first liquid supply part
SL2:第2液體供給部 SL2: The second liquid supply part
Tb1~Tb11:第1~11配管部 Tb1~Tb11: No. 1~11 piping parts
Tg1:液體排出管部 Tg1: Liquid discharge pipe
V1~V10:第1~10閥 V1~V10: 1st~10th valve
W:基板 W: Substrate
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