TWI799412B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
- Publication number
- TWI799412B TWI799412B TW107113531A TW107113531A TWI799412B TW I799412 B TWI799412 B TW I799412B TW 107113531 A TW107113531 A TW 107113531A TW 107113531 A TW107113531 A TW 107113531A TW I799412 B TWI799412 B TW I799412B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017084658 | 2017-04-21 | ||
JP2017-084658 | 2017-04-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201843751A TW201843751A (zh) | 2018-12-16 |
TWI799412B true TWI799412B (zh) | 2023-04-21 |
Family
ID=63855780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107113531A TWI799412B (zh) | 2017-04-21 | 2018-04-20 | 半導體裝置及其製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JPWO2018194156A1 (zh) |
KR (2) | KR20230133407A (zh) |
CN (1) | CN110582840A (zh) |
TW (1) | TWI799412B (zh) |
WO (1) | WO2018194156A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022078574A (ja) * | 2020-11-13 | 2022-05-25 | 昭和電工マテリアルズ株式会社 | 半導体装置の製造方法及びこれに用いられる接着剤 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201330217A (zh) * | 2011-11-11 | 2013-07-16 | Sumitomo Bakelite Co | 半導體裝置之製造方法 |
TW201333133A (zh) * | 2011-12-16 | 2013-08-16 | Hitachi Chemical Co Ltd | 接著劑組成物、膜狀接著劑、接著片、連接結構體及連接結構體的製造方法 |
JP2017045891A (ja) * | 2015-08-27 | 2017-03-02 | 日立化成株式会社 | 半導体装置及びそれを製造する方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4083601B2 (ja) * | 2003-03-10 | 2008-04-30 | 住友ベークライト株式会社 | 接着フィルムおよびこれを用いた半導体パッケージならびに半導体装置 |
JP5217260B2 (ja) | 2007-04-27 | 2013-06-19 | 住友ベークライト株式会社 | 半導体ウエハーの接合方法および半導体装置の製造方法 |
JP2009010057A (ja) * | 2007-06-27 | 2009-01-15 | Toray Ind Inc | 電子素子の実装方法 |
JP5130939B2 (ja) * | 2008-02-13 | 2013-01-30 | 東レ株式会社 | 半導体用接着組成物およびそれを用いた半導体装置の製造方法 |
JP2012074636A (ja) * | 2010-09-29 | 2012-04-12 | Sumitomo Bakelite Co Ltd | 接合方法、半導体装置、多層回路基板および電子部品 |
JP5830847B2 (ja) * | 2010-10-21 | 2015-12-09 | 富士通株式会社 | 半導体装置の製造方法及び接合方法 |
JP5867259B2 (ja) * | 2012-04-17 | 2016-02-24 | 住友ベークライト株式会社 | 積層体の製造方法 |
JP5838903B2 (ja) * | 2012-04-17 | 2016-01-06 | 住友ベークライト株式会社 | 積層体の製造方法 |
-
2018
- 2018-04-20 JP JP2019513700A patent/JPWO2018194156A1/ja active Pending
- 2018-04-20 KR KR1020237030762A patent/KR20230133407A/ko not_active Application Discontinuation
- 2018-04-20 CN CN201880025917.3A patent/CN110582840A/zh active Pending
- 2018-04-20 TW TW107113531A patent/TWI799412B/zh active
- 2018-04-20 KR KR1020197030649A patent/KR20190142333A/ko not_active IP Right Cessation
- 2018-04-20 WO PCT/JP2018/016280 patent/WO2018194156A1/ja active Application Filing
-
2023
- 2023-12-21 JP JP2023215945A patent/JP2024023787A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201330217A (zh) * | 2011-11-11 | 2013-07-16 | Sumitomo Bakelite Co | 半導體裝置之製造方法 |
TW201333133A (zh) * | 2011-12-16 | 2013-08-16 | Hitachi Chemical Co Ltd | 接著劑組成物、膜狀接著劑、接著片、連接結構體及連接結構體的製造方法 |
JP2017045891A (ja) * | 2015-08-27 | 2017-03-02 | 日立化成株式会社 | 半導体装置及びそれを製造する方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2018194156A1 (ja) | 2018-10-25 |
JPWO2018194156A1 (ja) | 2020-02-27 |
JP2024023787A (ja) | 2024-02-21 |
TW201843751A (zh) | 2018-12-16 |
KR20190142333A (ko) | 2019-12-26 |
CN110582840A (zh) | 2019-12-17 |
KR20230133407A (ko) | 2023-09-19 |
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