JP2017199900A5 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP2017199900A5 JP2017199900A5 JP2017081073A JP2017081073A JP2017199900A5 JP 2017199900 A5 JP2017199900 A5 JP 2017199900A5 JP 2017081073 A JP2017081073 A JP 2017081073A JP 2017081073 A JP2017081073 A JP 2017081073A JP 2017199900 A5 JP2017199900 A5 JP 2017199900A5
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- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing semiconductor
- manufacturing
- semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016086372 | 2016-04-22 | ||
| JP2016086372 | 2016-04-22 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017199900A JP2017199900A (ja) | 2017-11-02 |
| JP2017199900A5 true JP2017199900A5 (ja) | 2020-04-23 |
| JP6968567B2 JP6968567B2 (ja) | 2021-11-17 |
Family
ID=60090426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017081073A Active JP6968567B2 (ja) | 2016-04-22 | 2017-04-17 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US9947777B2 (ja) |
| JP (1) | JP6968567B2 (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10032918B2 (en) | 2016-04-22 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI737665B (zh) | 2016-07-01 | 2021-09-01 | 日商半導體能源硏究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
| US9978879B2 (en) | 2016-08-31 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2018138619A1 (en) | 2017-01-30 | 2018-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US11699704B2 (en) * | 2017-09-28 | 2023-07-11 | Intel Corporation | Monolithic integration of a thin film transistor over a complimentary transistor |
| US11205664B2 (en) | 2017-12-27 | 2021-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11929426B2 (en) | 2018-09-05 | 2024-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| KR20210080432A (ko) * | 2018-10-26 | 2021-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물의 제작 방법, 반도체 장치의 제작 방법 |
| US10978563B2 (en) | 2018-12-21 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US20220189766A1 (en) * | 2019-04-10 | 2022-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11711922B2 (en) | 2019-07-12 | 2023-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Memory device with memory cells comprising multiple transistors |
| JPWO2022038447A1 (ja) * | 2020-08-19 | 2022-02-24 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1998374A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| WO2011007682A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| WO2011052367A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101747158B1 (ko) | 2009-11-06 | 2017-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하기 위한 방법 |
| WO2011142467A1 (en) * | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101680768B1 (ko) * | 2010-12-10 | 2016-11-29 | 삼성전자주식회사 | 트랜지스터 및 이를 포함하는 전자장치 |
| JP5784479B2 (ja) * | 2010-12-28 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9331206B2 (en) * | 2011-04-22 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Oxide material and semiconductor device |
| JP6168795B2 (ja) | 2012-03-14 | 2017-07-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9190525B2 (en) * | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
| KR102211215B1 (ko) * | 2012-09-14 | 2021-02-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US9455349B2 (en) | 2013-10-22 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor with reduced impurity diffusion |
| US9960280B2 (en) | 2013-12-26 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9472678B2 (en) | 2013-12-27 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102325158B1 (ko) * | 2014-01-30 | 2021-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 |
| TWI672804B (zh) * | 2014-05-23 | 2019-09-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| KR102441803B1 (ko) * | 2014-09-02 | 2022-09-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 전자 기기 |
| US9768317B2 (en) * | 2014-12-08 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of semiconductor device, and electronic device |
| US9882061B2 (en) | 2015-03-17 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US11189736B2 (en) | 2015-07-24 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6802656B2 (ja) | 2015-07-30 | 2020-12-16 | 株式会社半導体エネルギー研究所 | メモリセルの作製方法及び半導体装置の作製方法 |
| WO2017081579A1 (en) * | 2015-11-13 | 2017-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN113105213A (zh) * | 2015-12-29 | 2021-07-13 | 株式会社半导体能源研究所 | 金属氧化物膜以及半导体装置 |
| US10700212B2 (en) | 2016-01-28 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof |
| DE112017000905T5 (de) | 2016-02-18 | 2018-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür, Anzeigevorrichtung und elektronisches Gerät |
-
2017
- 2017-04-17 JP JP2017081073A patent/JP6968567B2/ja active Active
- 2017-04-20 US US15/492,253 patent/US9947777B2/en not_active Expired - Fee Related
-
2018
- 2018-04-09 US US15/947,902 patent/US10741679B2/en active Active
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