DK3010043T3 - Halvlederindretning og fremstillingsfremgangsmåde dertil - Google Patents

Halvlederindretning og fremstillingsfremgangsmåde dertil

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Publication number
DK3010043T3
DK3010043T3 DK14807330.7T DK14807330T DK3010043T3 DK 3010043 T3 DK3010043 T3 DK 3010043T3 DK 14807330 T DK14807330 T DK 14807330T DK 3010043 T3 DK3010043 T3 DK 3010043T3
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DK
Denmark
Prior art keywords
semiconductor device
manufacturing process
manufacturing
semiconductor
Prior art date
Application number
DK14807330.7T
Other languages
English (en)
Inventor
Kai Cheng
Original Assignee
Enkris Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enkris Semiconductor Inc filed Critical Enkris Semiconductor Inc
Application granted granted Critical
Publication of DK3010043T3 publication Critical patent/DK3010043T3/da

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
DK14807330.7T 2013-06-06 2014-01-06 Halvlederindretning og fremstillingsfremgangsmåde dertil DK3010043T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310223571.7A CN103311284B (zh) 2013-06-06 2013-06-06 半导体器件及其制作方法
PCT/CN2014/070150 WO2014194669A1 (zh) 2013-06-06 2014-01-06 半导体器件及其制作方法

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DK3010043T3 true DK3010043T3 (da) 2019-05-06

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US (1) US9640624B2 (da)
EP (1) EP3010043B1 (da)
JP (1) JP6195979B2 (da)
KR (1) KR101780890B1 (da)
CN (1) CN103311284B (da)
DK (1) DK3010043T3 (da)
SG (1) SG11201510008UA (da)
WO (1) WO2014194669A1 (da)

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CN103311284B (zh) * 2013-06-06 2015-11-25 苏州晶湛半导体有限公司 半导体器件及其制作方法
US9824990B2 (en) 2014-06-12 2017-11-21 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for reliability enhancement in packages
US9881857B2 (en) 2014-06-12 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for reliability enhancement in packages
US9812562B1 (en) 2016-06-03 2017-11-07 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure, HEMT structure and method of forming the same
JP2018157141A (ja) * 2017-03-21 2018-10-04 株式会社東芝 半導体装置及び半導体装置の製造方法
CN109935630B (zh) * 2017-12-15 2021-04-23 苏州能讯高能半导体有限公司 半导体器件及其制造方法
CN112349773A (zh) * 2019-08-07 2021-02-09 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
CN111952360B (zh) * 2020-08-19 2023-02-21 深圳方正微电子有限公司 场效应管及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6235639B1 (en) 1998-11-25 2001-05-22 Micron Technology, Inc. Method of making straight wall containers and the resultant containers
KR100403454B1 (ko) * 2000-06-20 2003-11-01 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
KR20020002700A (ko) * 2000-06-30 2002-01-10 박종섭 금속 배선 형성 방법
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US7456443B2 (en) 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7749911B2 (en) * 2004-11-30 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming an improved T-shaped gate structure
US7141486B1 (en) 2005-06-15 2006-11-28 Agere Systems Inc. Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures
JP2007165446A (ja) 2005-12-12 2007-06-28 Oki Electric Ind Co Ltd 半導体素子のオーミックコンタクト構造
CN101162695A (zh) 2006-10-09 2008-04-16 西安能讯微电子有限公司 氮化镓hemt器件表面钝化及提高器件击穿电压的工艺
CN101312207B (zh) * 2007-05-21 2011-01-05 西安捷威半导体有限公司 增强型hemt器件及其制造方法
CN101320750A (zh) 2007-06-06 2008-12-10 西安能讯微电子有限公司 Hemt器件及其制造方法
JP2008306083A (ja) 2007-06-11 2008-12-18 Nec Corp Ｉｉｉ−ｖ族窒化物半導体電界効果型トランジスタおよびその製造方法
US7859021B2 (en) * 2007-08-29 2010-12-28 Sanken Electric Co., Ltd. Field-effect semiconductor device
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
JP2010067690A (ja) 2008-09-09 2010-03-25 Toshiba Corp 化合物半導体装置およびその製造方法
JP5496635B2 (ja) * 2008-12-19 2014-05-21 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
CN102130158B (zh) * 2011-01-05 2012-07-25 西安电子科技大学 阶梯型凹槽栅高电子迁移率晶体管
US8716141B2 (en) * 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
CN103311284B (zh) * 2013-06-06 2015-11-25 苏州晶湛半导体有限公司 半导体器件及其制作方法

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EP3010043A4 (en) 2017-03-08
WO2014194669A1 (zh) 2014-12-11
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