HK1245999A1 - 半導體器件及半導體器件的製造方法 - Google Patents

半導體器件及半導體器件的製造方法

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Publication number
HK1245999A1
HK1245999A1 HK18105264.8A HK18105264A HK1245999A1 HK 1245999 A1 HK1245999 A1 HK 1245999A1 HK 18105264 A HK18105264 A HK 18105264A HK 1245999 A1 HK1245999 A1 HK 1245999A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
manufacturing
manufacturing semiconductor
semiconductor
Prior art date
Application number
HK18105264.8A
Other languages
English (en)
Inventor
松原義久
Original Assignee
瑞薩電子株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子株式會社 filed Critical 瑞薩電子株式會社
Publication of HK1245999A1 publication Critical patent/HK1245999A1/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L2924/151Die mounting substrate
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    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
HK18105264.8A 2016-06-14 2018-04-23 半導體器件及半導體器件的製造方法 HK1245999A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016118243A JP2017224686A (ja) 2016-06-14 2016-06-14 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
HK1245999A1 true HK1245999A1 (zh) 2018-08-31

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US (1) US10008435B2 (zh)
JP (1) JP2017224686A (zh)
CN (1) CN107507810A (zh)
HK (1) HK1245999A1 (zh)

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KR102420589B1 (ko) * 2017-12-04 2022-07-13 삼성전자주식회사 히트 싱크를 가지는 반도체 패키지
US20200068746A1 (en) * 2018-08-24 2020-02-27 Google Llc Thermal materials for increasing a rate of heat pipe cooling
US11600573B2 (en) * 2019-06-26 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of chip package with conductive support elements to reduce warpage
KR102574409B1 (ko) * 2019-07-01 2023-09-04 삼성전기주식회사 반도체 패키지
CN110325021B (zh) * 2019-08-01 2021-03-23 广东德瑞源新材料科技有限公司 便于稳固安装的石墨烯高效型散热器
KR20210108583A (ko) 2020-02-26 2021-09-03 삼성전자주식회사 반도체 패키지 및 그의 제조 방법
CN111987052A (zh) * 2020-03-26 2020-11-24 上海兆芯集成电路有限公司 半导体封装
US11248852B2 (en) * 2020-07-06 2022-02-15 Dell Products L.P. Graphite thermal cable and method for implementing same
CN112366188B (zh) * 2020-08-24 2023-07-25 杰群电子科技(东莞)有限公司 一种具有散热齿片的半导体器件封装结构及封装方法
CN116504733B (zh) * 2023-06-28 2023-09-15 深圳辰达行电子有限公司 一种大功率贴片桥散热封装结构及封装方法

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