TWI792279B - 成膜裝置及具有開口部的板 - Google Patents
成膜裝置及具有開口部的板 Download PDFInfo
- Publication number
- TWI792279B TWI792279B TW110114634A TW110114634A TWI792279B TW I792279 B TWI792279 B TW I792279B TW 110114634 A TW110114634 A TW 110114634A TW 110114634 A TW110114634 A TW 110114634A TW I792279 B TWI792279 B TW I792279B
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- Taiwan
- Prior art keywords
- opening
- plate
- gas
- partition
- film forming
- Prior art date
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- 238000005192 partition Methods 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000001816 cooling Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000000638 solvent extraction Methods 0.000 claims 1
- 230000001174 ascending effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 156
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000005855 radiation Effects 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 9
- 230000001629 suppression Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 5
- 229910003468 tantalcarbide Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- -1 etc.) Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- C—CHEMISTRY; METALLURGY
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Abstract
本實施形態提供一種能夠於徑向上控制對基板面內供給的製程氣體的濃度或流量的成膜裝置及板。本實施形態的成膜裝置包括:成膜室,能夠收容基板;氣體供給部,設置於成膜室的上部且具有對基板的成膜面上供給製程氣體的多個噴嘴以及抑制製程氣體的溫度上升的冷卻部;加熱器,將基板加熱到1500℃以上;以及板,於成膜室內與形成有多個噴嘴的第一開口部的氣體供給部的下表面相向,並與該下表面分開配置,並且板包括:多個第二開口部,具有比第一開口部小的直徑,且大致均等地配置於該板面內;以及分隔部,於與氣體供給部的相向面上突出,且將板的面內分隔為多個區域。
Description
本實施形態是有關於一種成膜裝置及板。
SiC膜等的磊晶成長法中所使用的成膜裝置需要於1500℃~1700℃這一高溫下對基板進行加熱。因此,例如,設置於成膜腔室的上部的氣體供給部亦因來自用於對基板進行加熱的加熱器等的輻射而暴露於高溫下。然而,於氣體供給部附近,若原料氣體或摻雜氣體產生對流並被加熱,則包含原料及摻雜劑的堆積物會附著於氣體供給部的表面。此種附著於氣體供給部的堆積物成為顆粒(particle)而落下到基板上,成為設備(device)不良的原因。另外,亦存在如下問題:自附著於氣體供給部的堆積物釋放出摻雜劑氣體,藉此SiC膜的摻雜濃度會經時性地發生變化(記憶效應(memory effect))。
本實施形態提供一種能夠於徑向上控制對基板面內供給的製程氣體的濃度或流量的成膜裝置及板。
本實施形態的成膜裝置包括:成膜室,能夠收容基板;氣體供給部,設置於成膜室的上部且具有對基板的成膜面上供給製程氣體的多個噴嘴以及抑制製程氣體的溫度上升的冷卻部;加熱器,將基板加熱到1500℃以上;以及板,於成膜室內與形成有多個噴嘴的第一開口部的氣體供給部的下表面相向,並與該下表面分開配置,並且板包括:多個第二開口部,具有比第一開口部小的直徑,且大致均等地配置於該板面內;以及分隔部,於與氣體供給部的相向面上突出,且將板的面內分隔為多個區域。
本實施形態的板與對成膜室內的基板的成膜面上供給氣體的氣體供給部相向,並與該氣體供給部分開配置,所述板包括:多個第二開口部,具有比設置於氣體供給部且供給氣體的噴嘴的第一開口部小的直徑,且大致均等地配置於該板面內;以及分隔部,於與氣體供給部的相向面中突出。
以下,參照圖式說明本發明的實施形態。本實施形態並不限定本發明。圖式是示意性的或概念性的,各部分的比率等未必限於與現實的比率等相同。於說明書與圖式中,對與關於已出現的圖式而於前敘述的組件相同的組件標註相同的符號,並適宜省略詳細的說明。
(第一實施形態)
圖1是表示第一實施形態的成膜裝置1的結構例的剖面圖。成膜裝置1包括:腔室10、襯管(liner)20、冷卻部31、冷卻部35、氣體供給部40、排氣部50、基座(susceptor)60、支撐部70、旋轉機構80、下部加熱器90、上部加熱器95、反射器(reflector)100、襯管110、板120、以及絕熱材96。
作為成膜室的腔室10能夠收容基板W,例如為不鏽鋼製。腔室10的內部藉由未圖示的真空泵而減壓。腔室10具有頭部12、以及主體部13。於頭部12設置有氣體供給部40及冷卻部31。關於自氣體供給部40供給的包含原料氣體、載氣、輔助氣體、摻雜氣體的製程氣體,於腔室10的頭部12的內部藉由冷卻部31來抑制溫度上升。因此,以下將腔室10的頭部12的內部稱為溫度上升抑制區域Rc。再者,所謂輔助氣體,是發揮抑制原料氣體的過剩的反應等作用的氣體。例如,於SiC膜的形成中,在使用Si系氣體作為原料氣體的情況下,藉由添加HCl作為輔助氣體,而有抑制氣相中的Si的團簇化等效果。
於主體部13的腔室10的內部,設置有基座60、旋轉機構80、下部加熱器90及上部加熱器95等。自氣體供給部40供給的氣體於主體部13的內部經加熱,並於基板W的表面產生反應。藉此,於基板W上使膜磊晶成長。膜例如為SiC膜等。
腔室10的頭部12所包括的襯管110的內徑與主體部13所包括的襯管20的內徑等同、或者比其小。襯管110是被覆腔室10的頭部12的內壁,並抑制於頭部12的內壁生成堆積物的中空圓筒構件。作為襯管110的材料,使用紅外線的透過率高的材料,例如石英。藉由如此進行,抑制因經由襯管20或基座60、基板W的來自上部加熱器95與下部加熱器90的輻射而襯管110被加熱到高溫的情況。另外,襯管110被配置成即便熱變形亦不會與主體部13的內壁產生擦蹭。因此,襯管110的外壁面與主體部13的內壁面於除了支撐襯管110的設置於頭部12的內壁側的未圖示的支撐部(圖2的支撐部140)以外的位置,均是分開配置。
襯管20是被覆腔室10的內壁,並抑制於上部加熱器95、或絕熱材96、主體部13的內壁生成堆積物的中空筒狀構件。襯管20因來自上部加熱器95的輻射而被加熱到高溫,發揮用於藉由輻射對基板W進行加熱的熱壁(hot wall)的作用。作為襯管20的材料,選擇耐熱性高的材料,例如使用碳、或由SiC塗佈的碳等。
冷卻部31設置於腔室10的頭部12,例如,成為冷卻劑(例如,水)的流路。藉由在流路中流動冷卻劑,而冷卻部31抑制溫度上升抑制區域Rc內的氣體的溫度上升。另外,如後述的圖2所示般,於氣體供給部40的各噴嘴N的周圍亦設置有冷卻部32。藉此,可抑制向溫度上升抑制區域Rc供給的氣體的溫度上升。與此同時,冷卻部31是出於如下目的而設置:不會藉由來自上部加熱器95或下部加熱器90的輻射對腔室10的頭部12進行加熱。
冷卻部35設置於腔室10的主體部13,並與冷卻部31同樣地,例如成為冷卻劑(例如,水)的流路。然而,冷卻部35並非是為了冷卻主體部13內的空間而設置,而是出於如下目的而設置:來自上部加熱器95或下部加熱器90的熱不會對腔室10的主體部13進行加熱。
氣體供給部40設置於與基板W的表面相向的腔室10的上表面,並具有多個噴嘴。氣體供給部40設置於下部加熱器90及上部加熱器95的更上方,並設置於溫度上升抑制區域Rc的上部。氣體供給部40經由噴嘴而向腔室10的內部的溫度上升抑制區域Rc供給原料氣體(Si系氣體、C系氣體等)、摻雜氣體(氮氣、含鋁的氣體等)、輔助氣體(HCl氣體等)及載氣(氫氣、氬氣等)。
排氣部50設置於腔室10的底部,並將成膜處理中所使用後的氣體向腔室10的外部排出。
基座60是能夠載置基板W的圓環狀構件,例如為碳製。支撐部70是能夠支撐基座60的圓筒形構件,例如與基座60同樣地為碳製。支撐部70與旋轉機構80連接,並藉由旋轉機構80而構成為能夠旋轉。支撐部70可使基板W與基座60一起旋轉。基座60及支撐部70除了可由碳形成以外,例如亦可由SiC(碳化矽)、TaC(碳化鉭)、W(鎢)、Mo(鉬)等具有1500℃以上的耐熱性的材料形成。另外,基座60及支撐部70亦可使用對碳塗佈SiC或TaC等而成者。
下部加熱器90設置於基座60及基板W的下方、且支撐部70的內部。下部加熱器90介隔基座60自基板W下方對基板W進行加熱。上部加熱器95是沿著設置於腔室10的主體部13的內周的絕熱材96的側面而設置,並介隔襯管20自基板W上方對基板W進行加熱。旋轉機構80使基板W以例如300 rpm以上的旋轉速度旋轉,同時,下部加熱器90及上部加熱器95將該基板W加熱到1500℃以上的高溫。藉此,可均勻地加熱基板W。
反射器100設置於腔室10的頭部12與主體部13之間,例如為碳製。反射器100將來自下部加熱器90、上部加熱器95的熱向下方反射。藉此,設為頭部12的溫度不會因來自下部加熱器90、上部加熱器95的輻射而過剩地上升。反射器100與冷卻部31以使溫度上升抑制區域Rc的溫度小於原料氣體的反應溫度的方式發揮功能。反射器100除了可由碳形成以外,例如亦可由SiC(碳化矽)、TaC(碳化鉭)、W(鎢)、Mo(鉬)等具有1500℃以上的耐熱性的材料形成。反射器100可為一片薄板,為了效率良好地反射熱,較佳為設為以適當的間隔使多個薄板分開的結構。
參照圖2,對襯管110及板120的結構進行說明。
圖2是表示腔室10的頭部12的結構例的剖面圖。於氣體供給部40,設置有多個噴嘴N。噴嘴N被設置成朝向腔室10內的基座60上所載置的基板W的表面噴出原料氣體、摻雜氣體、輔助氣體及載氣。氣體供給部40向相對於基板W的表面大致垂直的方向(即,大致鉛垂方向)D1噴出原料氣體、摻雜氣體、輔助氣體、載氣等氣體。噴嘴N自與噴嘴N連接的未圖示的氣體配管將原料氣體、摻雜氣體、輔助氣體、載氣等氣體導入至溫度上升抑制區域Rc。噴嘴N的第一開口部OP1位於腔室10的內側,是噴出氣體的噴嘴N的開口。於氣體供給部40,在噴嘴N的周圍設置冷卻部32,抑制氣體供給部40與頭部12的溫度過剩地上升。
襯管110是被覆腔室10內的頭部12的內壁,並抑制於頭部12的內壁生成堆積物的中空圓筒構件。襯管110由設置於頭部12的內壁側的支撐部140支撐。作為襯管110的材料,使用紅外線的透過率高的材料,例如石英。藉由如此進行,抑制因經由襯管20或基座60、基板W等的來自上部加熱器95與下部加熱器90的輻射而襯管110被加熱到高溫的情況。另外,襯管110被配置成即便熱變形亦不會與頭部12的內壁接觸。因此,襯管110的外壁面於除了支撐部140以外的位置,均是與頭部12的內壁面分開配置。
板120設置於氣體供給部40的下部,且沿著襯管110的內緣設置。板120具有大致圓形的平面形狀,由石英等紅外線的透過率高的材料構成。藉由如此進行,而抑制板120被加熱到高溫。板120藉由板120的支撐部121d而局部載置於襯管110上。另外,除了支撐部121d與襯管110的接觸部以外,於板120與襯管110之間,設置有間隙GP2。間隙GP2可使來自後述的開口部OP10的吹掃氣體(purge gas)沿著襯管110的內周側面流動。藉由如此進行,而可使自後述的第二開口部OP2導入至溫度上升抑制區域Rc的原料氣體難以到達襯管110,抑制襯管110表面的反應副產物的生成。
板120於腔室10內設置於與氣體供給部40的多個噴嘴N的第一開口部OP1相向的位置,並與氣體供給部40的下表面分開配置。板120被設置成覆蓋具有第一開口部OP1的氣體供給部40的下表面。另一方面,於氣體供給部40的氣體供給部40與板120之間存在間隙GP,板120並不直接接觸氣體供給部40。藉此,即便板120因溫度上升而熱變形,亦抑制板120對氣體供給部40的下表面產生干擾的情況。
板120具有大致均等地配置於板面內的多個第二開口部OP2。第二開口部OP2具有比第一開口部OP1小的直徑。因此,來自第一開口部OP1的氣體暫時滯留於間隙GP,其後,經由第二開口部OP2被大致均等地導入至溫度上升抑制區域Rc。如此,板120藉由第二開口部OP2而具有氣體的整流效果。
另外,板120包括在與氣體供給部40的相向面F120中突出的分隔部121a、分隔部121b、分隔部121c。如後述般,多個分隔部121a、分隔部121b、分隔部121c於板120的相向面F120內呈大致圓形地被設置為同心圓狀。
設置於氣體供給部40的開口部OP10是為了供給吹掃氣體而設置的孔。如上所述,自開口部OP10供給的吹掃氣體經由板120與襯管110之間的間隙GP2而沿著襯管110的內周側面流動。藉由如此進行,而可使自第二開口部OP2導入至溫度上升抑制區域Rc的原料氣體難以到達襯管110,抑制襯管110的表面的反應副產物的生成。
圖3是表示板120及第一開口部OP1的配置關係的圖。圖4是沿著圖3的4-4線的剖面圖。圖5是板120的側面圖。參照圖3~圖5,說明板120的結構及第一開口部OP1的配置。
板120於相向面F120上具有多個分隔部121a、分隔部121b、分隔部121c。由分隔部121a、分隔部121b、分隔部121c中位於最內周側的第一分隔部121a包圍的中心區域為第一板區域R1。位於第一分隔部121a的外周側的第二分隔部121b與第一分隔部121a之間的中間區域為第二板區域R2。位於第二分隔部121b的外周側的第三分隔部121c與第二分隔部121b之間的外側區域為第三板區域R3。
第二開口部OP2大致均等地配置於板面內,並將供給到區域R1~區域R3各區域的氣體大致均等地導入至腔室10內。將與第一板區域R1相向的第一開口部OP1設為OP1_1,將與第二板區域R2相向的第一開口部OP1設為OP1_2,將與第三板區域R3相向的第一開口部OP1設為OP1_3。開口部OP1_1~開口部OP1_3分別向由分隔部121a~分隔部121c分隔出的區域R1~區域R3供給氣體。開口部OP1_1~開口部OP1_3的噴嘴N對氣體供給部40與板120之間的間隙GP供給濃度彼此不同的氣體或種類(組成)彼此不同的氣體。因此,於間隙GP中,藉由分隔部121a~分隔部121c,而供給到區域R1~區域R3的氣體幾乎不會彼此混合,而是經由第二開口部OP2被導入至腔室10內。
氣體供給部40自噴嘴N供給原料氣體(例如,矽烷氣體、丙烷氣體等)、摻雜氣體(例如,氮氣、三甲基鋁(Trimethylaluminium,TMA)氣體、二硼烷等)、輔助氣體(HCl氣體等)、載氣(例如,氫氣、氬氣等)。
氣體供給部40可於區域R1~區域R3中變更原料氣體、摻雜氣體、輔助氣體、載氣的比率或濃度。例如,氣體供給部40可於區域R1~區域R3中變更原料氣體的矽烷的矽量與丙烷氣體的碳量的比(C/Si比)。另外,氣體供給部40可於區域R1~區域R3中變更載氣的氫氣的流量。藉此,可大致均勻地調整基板W的面內的SiC膜的膜厚或摻雜濃度。
如此,氣體供給部40可對區域R1~區域R3各區域供給濃度比不同的氣體。板120具有分隔部121a~分隔部121c,因此抑制供給到R1~R3的間隙GP的氣體的混合,並自第二開口部OP2分別大致均等地導入至腔室10內。
另外,本實施形態的板120與氣體供給部40的第一開口部OP1_1~第一開口部OP1_3相向地具有第二開口部OP2,但並不具有比第二開口部OP2大的開口部。因此,自第一開口部OP1_1~第一開口部OP1_3供給的氣體並非保持原樣而被直接導入至腔室10內,而是於區域R1~區域R3各區域的間隙GP中暫時滯留後,經由第二開口部OP2被導入至腔室10內。藉此,板120可自區域R1~區域R3各區域將氣體大致均等地導入至腔室10內。
如圖3所示般,氣體供給部40具有第三開口部OP3。第三開口部OP3是用於利用放射溫度計(未圖示)測定腔室10的內部溫度的高溫計用光路(optical-path for the pyrometer)。放射溫度計經由安裝有測溫窗的噴嘴而測定基板W的表面溫度。例如,圖6是表示於噴嘴N安裝有測溫窗130的氣體供給部40的結構例的剖面圖。經由配管PL1而安裝於噴嘴N的第三開口部OP3。放射溫度計經由配管PL1而測定腔室10內的基板W的表面溫度。配管PL1獨立於測溫窗130而與配管PL2連通,可如箭頭A所示般使氣體(例如,氫、氬等)流動。於圖3所示的例子中,測溫窗設置於區域R1~區域R3各區域的第三開口部OP3。
圖7是表示氣體供給部40與板120之間的間隙GP的放大圖。將氣體供給部40的下表面(氣體供給面)F40與板120的上表面(相向面)F120之間的第一距離設為d1,將下表面F40與分隔部121a~分隔部121c之間的第二距離設為d2。第二距離d2比第一距離d1小。
例如,理想的是第一距離d1為約1.0 mm~8.0 mm,第二距離d2是設為約0.5 mm~2 mm。於第一距離d1小於1.0 mm的情況下,難以獲得由分隔部121a~分隔部121c帶來的氣體的分離效果。另外,於第一距離d1大於8.0 mm的情況下,抑制自板120向氣體供給部40的放熱效果。另外,於第二距離d2小於0.5 mm的情況下,有如下擔憂:因溫度上升而板120變形,藉此分隔部121a~分隔部121c的一部分對氣體供給部40產生干擾。另一方面,若第二距離d2大於2.0 mm,則分隔部121a~分隔部121c無法於區域R1~區域R3中分離氣體。另外,d1與d2的比率(d2/d1)理想的是0.5以下。其原因在於:若d2/d1成為0.5以上,則難以獲得氣體的分離效果。
板120的第二開口部OP2的直徑例如為0.5 mm以上且5 mm以下。另外,設置於板120的第二開口部OP2的總面積相對於板120的面F120或其相反側的面的面積而為5%以上且25%以下。於第二開口部OP2小於0.5 mm的情況下,氣體自板120向腔室10的內部的流動惡化,因此氣體容易滯留於間隙GP中。因此,難以獲得由分隔部121a~分隔部121c分隔的區域R1~區域R3中的氣體的分離效果。於第二開口部OP2大於5 mm的情況下,板120依存於第一開口部OP1的位置而會使氣體不均勻地通過,因此難以獲得氣體的整流效果。另外,於第二開口部OP2的總面積相對於板120的面F120或其相反側的面的面積而小於5%的情況下,氣體的流動惡化,因此氣體容易滯留於間隙GP中。因此,難以獲得區域R1~區域R3的氣體分離效果。另一方面,於第二開口部OP2的總面積相對於板120的面F120或其相反側的面的面積而大於25%的情況下,板120依存於第一開口部OP1的位置而會使氣體不均勻地通過,因此難以獲得由板120帶來的整流效果。另外,第二開口部OP2容易因熱而變形。
藉由設為此種結構,本實施形態的成膜裝置1可藉由分隔部121a~分隔部121c來抑制間隙GP中的氣體的混合,並且可使區域R1~區域R3的氣體濃度或流量變動。結果,可提高基板W上所形成的膜的膜質(膜厚、摻雜濃度、混晶組成比、結晶性等)的均勻性。
圖8A及圖8B是表示基板W面內的膜中摻雜濃度分佈的圖表。圖8A及圖8B表示於區域R1~區域R3中變更原料氣體的矽烷的矽量與丙烷氣體的碳量的比(C/Si比)時的摻雜濃度的偏差。縱軸表示經成膜的膜(例如,SiC膜)的摻雜濃度(用平均值標準化而成者)。橫軸是將基板W的中心設為0時的距該中心0的距離。
於圖8A中,氣體供給部40使氣體的C/Si比自基板W的中心向端部逐漸下降而呈於第一板區域R1中為5.7,於第二板區域R2中為1.3,於第三板區域R3中為1.0。藉此,基板W面內的膜中摻雜濃度分佈於基板W的中心比較低,於端部比較高。即,摻雜濃度於基板W的面內大致呈U字型。
相對於此,於圖8B中,氣體供給部40使氣體的C/Si比自中心部朝向端部暫時下降後上升而呈於第一板區域R1中為1.9,於第二板區域R2中為0.18,於第三板區域R3中為4.3。藉此,得知,膜中摻雜濃度分佈較圖8A所示者而言更平坦,摻雜濃度的面內均勻性提高。
如此,本實施形態的成膜裝置1可藉由調節自氣體供給部40的中心向外周方向的氣體的C/Si比,來控制基板W上所成膜的膜的摻雜濃度的分佈形狀。即,可提高基板W上所成膜的膜的摻雜濃度的面內均勻性。
圖9A及圖9B是表示於區域R1~區域R3中變更載氣的氫氣的流量時的膜厚的偏差的圖表。於圖9A及圖9B中,縱軸表示經成膜的膜(例如,SiC膜)的膜厚(用平均值標準化而成者)。橫軸是將基板W的中心設為0時的距該中心0的距離。
於圖9A中,氣體供給部40使氫氣的流量自基板W的中心向端部緩慢地增加而呈於第一板區域R1中為20 L,於第二板區域R2中為62 L,於第三板區域R3中為70 L。藉此,膜厚於基板W的中心比較薄,於端部變厚。即,摻雜濃度於基板W的面內大致呈M字型。
相對於此,於圖9B中,氣體供給部40使氫氣的流量自基板W的中心向端部急劇地增加而呈於第一板區域R1中為13.5 L,於第二板區域R2中為34.5 L,於第三板區域R3中為104 L。藉此,膜厚雖然於最端部變薄,但自基板W的中心到端部經大致均勻化。
如此,本實施形態的成膜裝置1可藉由調節氫氣的流量,來控制基板W上所成膜的膜的膜厚的分佈形狀。即,可提高基板W上所成膜的膜的膜厚的面內均勻性。
(第二實施形態)
圖10是表示第二實施形態的板120及第一開口部OP1的配置關係的圖。於第二實施形態中,板120於與參照圖6而說明的第三開口部(高溫計用光路)OP3對應的位置具有第四開口部OP4。第四開口部OP4的直徑較佳為與第三開口部OP3的直徑相同或比第三開口部OP3的直徑大。第四開口部OP4可不對板120與氣體供給部40之間的間隙GP供給來自第三開口部OP3的氫氣地使來自第三開口部OP3的氫氣流向腔室10。另外,第三開口部OP3未由板120遮擋。因此,放射溫度計能夠經由第三開口部OP3正確地測定基板W的溫度。
另外,板120於第四開口部OP4的整個周圍具有分隔部121e。分隔部121e與分隔部121a~分隔部121c的任一者均連續,並個別地包圍第四開口部OP4各開口部。因此,可抑制來自第三開口部OP3的氫氣進入板120與氣體供給部40之間的間隙GP。藉此,成膜裝置1可容易地控制區域R1~區域R3各區域中的氫氣的流量。
(第三實施形態)
圖11是表示第三實施形態的板120的結構例的圖。圖12是沿著圖11的12-12線的剖面圖。根據第三實施形態,分隔部121a、分隔部121b是由多個能夠拆裝的夾具(例如,圖13的150a、150b等)構成。分隔部121a、分隔部121b於自氣體向板120的供給方向觀察時的平面佈局中,可為大致方形、大致圓形、大致橢圓形、大致多邊形的任一者。分隔部121a、分隔部121b藉由組合多個夾具150a、夾具150b等,而可於板120上構成為任意的平面形狀。如此,於第三實施形態中,分隔部121a、分隔部121b與板120是分體地設置,並藉由多個夾具150a、夾具150b等的組合而可任意地分隔板區域R1~板區域R3。構成分隔部121a、分隔部121b的多個夾具150a、夾具150b等可使用與板120相同的材料(例如,石英)。另外,分隔部121a、分隔部121b亦可分別一體地形成。另一方面,分隔部121a、分隔部121b亦可如圖12所示般,分為下部與上部。該情況下,分隔部121a、分隔部121b分別藉由將下部與上部連接而構成。
圖13是表示分隔部121a的結構例的立體圖。圖14是表示夾具150a的結構例的立體圖。圖15是表示夾具150b的結構例的立體圖。分隔部121a是由多個具有彼此不同的形狀的夾具150a、夾具150b構成。分隔部121a藉由將四個夾具150a與四個夾具150b組合而具有四個角圓潤的大致四邊形的形狀。
如圖14所示般,夾具150a是使稜柱狀構件彎曲而形成,並具有突起部151a。突起部151a具有與開口部OP2大致相似的平面形狀,以與圖12所示的開口部OP2嵌合,並於該平面形狀中比開口部OP2稍小地成形。夾具150a的水平延伸方向上的長度與垂直延伸方向上的長度能夠任意地設定。另外,於圖14中,夾具150a被彎曲為90度以便形成四個角圓潤的大致四邊形,但為了形成任意的形狀,角亦可以任意的角度彎曲而形成。
如圖15所示般,夾具150b是由稜柱狀構件形成,並具有突起部151b。突起部151b與突起部151a同樣地具有與開口部OP2大致相似的平面形狀,以與開口部OP2嵌合,並於該平面形狀中比開口部OP2稍小地成形。夾具150b的水平延伸方向上的長度與垂直延伸方向上的長度能夠任意地設定。
藉由將夾具150a、夾具150b的突起部151a、突起部151b嵌入至開口部OP2,而夾具150a、夾具150b於板120的表面經固定,可構成分隔部121a。
如所述分隔部121a、分隔部121b的說明般,夾具150a、夾具150b亦可分別一體地形成。另一方面,夾具150a亦可分為突起部151a的下部與其上的上部。另外,夾具150b亦可分為突起部151b的下部與其上的上部。該情況下,夾具150a、夾具150b分別藉由將下部與上部連接而構成。
再者,此處說明了分隔部121a的結構。分隔部121a可藉由將夾具150a、夾具150b、或者形狀或大小與夾具150a、夾具150b不同的其他夾具組合,而改變自氣體向板120的供給方向觀察時的平面佈局中的形狀。另外,分隔部121b亦可藉由將夾具150a、夾具150b、或者形狀或大小與夾具150a、夾具150b不同的其他夾具組合,而可任意地構成自氣體向板120的供給方向觀察時的平面佈局中的形狀。
第三實施形態的其他結構可與第一實施形態的對應的結構相同。因此,如圖11及圖12所示般,分隔部121a、分隔部121b自板120的表面突出,並將板120分隔成板區域R1~板區域R3。另外,藉由改變夾具150a、夾具150b的大小,可調整如圖7所示般的下表面F40與分隔部121a、分隔部121b之間的第二距離d2。藉此,第三實施形態可獲得與第一實施形態相同的效果。
(變形例)
圖16是表示第三實施形態的變形例的板120的結構例的圖。根據本變形例,於自氣體向板120的供給方向觀察時的平面佈局中,分隔部121a、分隔部121b的平面形狀與圖11的形狀不同。本變形例的其他結構可與第三實施形態的結構相同。如此,分隔部121a、分隔部121b的平面形狀能夠藉由夾具的形狀及組合而任意地變更。另外,分隔部的數量亦可為三個以上。藉由增大分隔部的數量,可更細地劃分板區域。本變形例可獲得與第三實施形態相同的效果。
對本發明的若干實施形態進行了說明,但該些實施形態是作為例子而提出者,並不意圖限定發明的範圍。該些實施形態能夠藉由其他各種形態來實施,於不脫離發明的主旨的範圍內,可進行各種省略、置換、變更。該些實施形態或其變形與包含於發明的範圍或主旨中同樣地,包含於申請專利範圍中所記載的發明與其均等的範圍中。
1:成膜裝置
10:腔室
12:頭部
13:主體部
20:襯管
31、32、35:冷卻部
40:氣體供給部
50:排氣部
60:基座
70:支撐部
80:旋轉機構
90:下部加熱器
95:上部加熱器
96:絕熱材
100:反射器
110:襯管
120:板
121a~121c:分隔部
121d、140:支撐部
121e:分隔部
130:測溫窗
150a、150b:夾具
151a、151b:突起部
A:箭頭
D1:方向
d1:第一距離
d2:第二距離
F120:相向面
F40:氣體供給部的下表面(氣體供給面)
GP、GP2:間隙
N:噴嘴
OP1:第一開口部
OP2:第二開口部
OP3:第三開口部
OP4:第四開口部
OP10、OP1_1、OP1_2、OP1_3:開口部
PL1、PL2:配管
R1~R3:第一板區域~第三板區域
Rc:溫度上升抑制區域
W:基板
圖1是表示第一實施形態的成膜裝置的結構例的剖面圖。
圖2是表示腔室的頭部的結構例的剖面圖。
圖3是表示板及第一開口部的配置關係的圖。
圖4是沿著圖3的4-4線的剖面圖。
圖5是板120的側面圖。
圖6是表示於噴嘴安裝有測溫窗的氣體供給部的結構例的剖面圖。
圖7是表示氣體供給部與板之間的間隙的放大圖。
圖8A是表示基板的面內的膜的摻雜濃度的偏差的圖表。
圖8B是表示基板的面內的膜的摻雜濃度的偏差的圖表。
圖9A是表示基板的面內的膜厚的偏差的圖表。
圖9B是表示基板的面內的膜厚的偏差的圖表。
圖10是表示第二實施形態的板及第一開口部的配置關係的圖。
圖11是表示第三實施形態的板的結構例的圖。
圖12是沿著圖11的12-12線的剖面圖。
圖13是表示分隔部的結構例的立體圖。
圖14是表示夾具的結構例的立體圖。
圖15是表示夾具的結構例的立體圖。
圖16是表示第三實施形態的變形例的板的結構例的圖。
32:冷卻部
40:氣體供給部
110:襯管
120:板
121a~121c:分隔部
121d、140:支撐部
D1:方向
F120:相向面
GP、GP2:間隙
N:噴嘴
OP1:第一開口部
OP2:第二開口部
OP10:開口部
R1~R3:第一板區域~第三板區域
Claims (17)
- 一種成膜裝置,包括:成膜室,能夠收容基板;氣體供給部,設置於所述成膜室的上部且具有對所述基板的成膜面上供給製程氣體的多個噴嘴、以及抑制所述製程氣體的溫度上升的冷卻部;加熱器,將所述基板加熱到1500℃以上;以及板,於所述成膜室內與形成有所述多個噴嘴的第一開口部的所述氣體供給部的下表面相向,並與所述下表面分開配置,並且所述板包括:多個第二開口部,具有比所述第一開口部小的直徑,且大致均等地配置於所述板面內;以及分隔部,於與所述氣體供給部的相向面上突出,且將所述板的面內分隔為多個區域。
- 如請求項1所述的成膜裝置,其中所述板具有由所述分隔部包圍的第一板區域、以及位於所述分隔部的外周側的第二板區域,且對所述第一板區域與所述第二板區域以彼此不同的濃度或彼此不同的流量自所述氣體供給部供給製程氣體。
- 如請求項1所述的成膜裝置,其中多個所述分隔部於所述相向面中被設置成同心圓狀。
- 如請求項1所述的成膜裝置,其中所述氣體供給部 具有用於測定所述成膜室的內部溫度的第三開口部,且所述板於與所述第三開口部相向的位置具有與所述第三開口部相同或者比所述第三開口部大的第四開口部,所述分隔部進而設置於所述第四開口部的周圍。
- 如請求項4所述的成膜裝置,其中所述分隔部設置於所述第四開口部的周圍。
- 如請求項1所述的成膜裝置,其中於所述噴嘴所相向的所述板的相向位置亦設置有所述第二開口部。
- 如請求項1所述的成膜裝置,其中所述氣體供給部與所述板之間的間隙為1.0mm~8.0mm,所述氣體供給部與所述分隔部之間的間隙為0.5mm~2mm。
- 如請求項1所述的成膜裝置,其中所述第二開口部的直徑為0.5mm~5mm。
- 如請求項1所述的成膜裝置,其中所述分隔部能夠拆裝地安裝於所述板上。
- 如請求項9所述的成膜裝置,其中所述分隔部具有嵌入至所述第二開口部的突起部。
- 一種具有開口部的板,其與對成膜室內的基板的成膜面上供給氣體的氣體供給部相向,並與所述氣體供給部分開配置,所述板包括:多個第二開口部,具有比設置於所述氣體供給部且供給所述氣體的噴嘴的第一開口部小的直徑,且大致均等地配置於所述板 面內;以及分隔部,於相對於所述氣體供給部的相向面中突出。
- 如請求項11所述的具有開口部的板,具有由所述分隔部包圍的第一板區域、以及位於所述分隔部的外周側的第二板區域。
- 如請求項11所述的具有開口部的板,其中多個所述分隔部於所述相向面中被設置成同心圓狀。
- 如請求項11所述的具有開口部的板,其中所述氣體供給部具有用於測定所述成膜室的內部溫度的第三開口部,且於與所述第三開口部相向的位置具有與所述第三開口部相同或者比所述第三開口部大的第四開口部,所述分隔部進而設置於所述第四開口部的周圍。
- 如請求項11所述的具有開口部的板,其中於所述噴嘴所相向的所述板的相向位置亦設置有所述第二開口部。
- 如請求項11所述的具有開口部的板,其中所述分隔部能夠拆裝地安裝於所述板上。
- 如請求項16所述的具有開口部的板,其中所述分隔部分別具有嵌入至所述第二開口部的突起部。
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JPH10195661A (ja) * | 1997-01-08 | 1998-07-28 | Ebara Corp | 気相成長装置 |
JP3982402B2 (ja) * | 2002-02-28 | 2007-09-26 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
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JP2012169409A (ja) * | 2011-02-14 | 2012-09-06 | Toshiba Corp | 半導体製造装置および半導体装置の製造方法 |
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