JP2020145418A - 基板を製造する方法、及び基板の製造用システム - Google Patents
基板を製造する方法、及び基板の製造用システム Download PDFInfo
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- JP2020145418A JP2020145418A JP2020017355A JP2020017355A JP2020145418A JP 2020145418 A JP2020145418 A JP 2020145418A JP 2020017355 A JP2020017355 A JP 2020017355A JP 2020017355 A JP2020017355 A JP 2020017355A JP 2020145418 A JP2020145418 A JP 2020145418A
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Abstract
Description
外的刺激をワーク2に印加する工程の後、ワーク2を周縁ワーク部10において分離する。本実施形態において、ワーク2を、周縁ワーク部10において、機械的切断手段26(図11及び12参照)、すなわち垂直スピンドルダイサーを使用して切断する。基板製造システムの分割手段は、機械的切断手段26を備える。機械的切断手段26は、本実施形態の分離手段を構成する。機械的切断手段26は、約30乃至80μmの切断幅、すなわちブレード幅を有する回転切断ブレード28を有する。
Claims (12)
- 第1表面(4)と前記第1表面(4)の反対側の第2表面(6)とを有するワーク(2)を準備する工程と、
複数の改質領域を備える改質層(8)を前記ワーク(2)の内部に形成する工程と、
前記改質層(8)を前記ワーク(2)の内部に形成する工程の後に、機能層(12)を前記ワーク(2)の前記第1表面(4)に形成する工程と、
前記機能層(12)を前記ワーク(2)の前記第1表面(4)に形成する工程の後に、前記ワーク(2)を前記改質層(8)に沿って分割することにより、前記機能層(12)を有する基板(16)を得る工程と、
を備え、
前記ワーク(2)を前記改質層(8)に沿って分割する工程は、外的刺激を前記ワーク(2)に印加する工程を備える、
機能層(12)を有する基板(16)を製造する方法。 - 前記改質層(8)を前記ワーク(2)の内部に形成する工程は、レーザービーム(LB)を前記ワーク(2)に印加する工程を備え、
前記ワーク(2)は、前記レーザービーム(LB)を透過する材料から構成され、
前記レーザービーム(LB)の焦点(P)が前記第1表面(4)から前記第2表面(6)に向かう方向において前記第1表面(4)から距離(d)を置いた状態で、前記第1表面(4)に沿った少なくとも複数の位置において前記レーザービーム(LB)を前記ワーク(2)に印加する、
請求項1に記載の方法。 - 前記レーザービーム(LB)を、前記ワーク(2)の前記第1表面(4)側から前記ワーク(2)に印加する、
請求項2に記載の方法。 - 前記改質層(8)は、前記第1表面(4)に対して実質的に平行であるように形成される、
請求項1乃至3のいずれか一項に記載の方法。 - 前記改質層(8)は、改質領域が形成されない周縁ワーク部(10)により取り囲まれるように形成される、
請求項1乃至4のいずれか一項に記載の方法。 - 前記ワーク(2)を前記改質層(8)に沿って分割する工程は、前記ワーク(2)を前記周縁ワーク部(10)において分離する工程を更に備える、
請求項5に記載の方法。 - 前記ワーク(2)を前記改質層(8)に沿って分割する工程の後に、前記機能層(12)が形成された前記第1表面(4)の反対側の前記基板(16)の表面(32)を研削及び/又は研磨する工程を更に備える、
請求項1乃至6のいずれか一項に記載の方法。 - 前記ワーク(2)を前記改質層(8)に沿って分割する工程の後に、前記ワーク(2)の残部(30)の表面(34)であって、前記ワーク(2)の前記第2表面(6)の反対側の表面(34)を研削及び/又は研磨する工程を更に備える、
請求項1乃至7のいずれか一項に記載の方法。 - 前記ワーク(2)を前記改質層(8)に沿って分割する工程の後に、改質層(8)を形成する前記ステップ、機能層(12)を形成する前記ステップ、及び前記ワーク(2)を分割するステップを、前記ワーク(2)の残部(30)に対して1回又は複数回繰り返して、機能層(12)を有する複数の基板(16)を得る、
請求項1乃至8のいずれか一項に記載の方法。 - 前記改質領域は、アモルファス領域及び/又は亀裂が形成された領域を備える、又は、
前記改質領域は、アモルファス領域及び/又は亀裂が形成された領域である、
請求項1乃至9のいずれか一項に記載の方法。 - 前記外的刺激を前記ワーク(2)に印加する工程は、超音波を前記ワーク(2)に印加する工程、及び/又は圧力を前記ワーク(2)に印加する工程、及び/又は機械的力を前記ワーク(2)に印加する工程、及び/又は前記ワーク(2)を加熱する工程、及び/又は前記ワーク(2)を冷却する工程、及び/又は真空を前記ワーク(2)に印加する工程を備える、又はこれらからなる、
請求項1乃至10のいずれか一項に記載の方法。 - 第1表面(4)と前記第1表面(4)の反対側の第2表面(6)とを有するワーク(2)を支持するための支持部材と、
複数の改質領域を備える改質層(8)を前記ワーク(2)の内部に形成するように構成された改質層形成手段と、
前記改質層(8)を前記ワーク(2)の内部に形成する工程の後に、機能層(12)を前記ワーク(2)の前記第1表面(4)に形成するように構成された機能層形成手段と、
前記機能層(12)を前記ワーク(2)の前記第1表面(4)に形成する工程の後に、前記ワーク(2)を前記改質層(8)に沿って分割することにより前記機能層(12)を有する基板(16)を得るように構成された分割手段と、
を備え、
前記分割手段は、外的刺激を前記ワーク(2)に印加するように構成された外的刺激印加手段を備える、
機能層(12)を有する基板(16)を製造するためのシステム。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016062949A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社ディスコ | SiCのスライス方法 |
JP2016111143A (ja) * | 2014-12-04 | 2016-06-20 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017041482A (ja) * | 2015-08-18 | 2017-02-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017195245A (ja) * | 2016-04-19 | 2017-10-26 | 株式会社ディスコ | SiCウエーハの加工方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
KR101109860B1 (ko) | 2004-08-06 | 2012-02-21 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공 방법, 가공 대상물 절단 방법 및 반도체 장치 |
KR101400699B1 (ko) | 2007-05-18 | 2014-05-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판 및 반도체 장치 및 그 제조 방법 |
US8927348B2 (en) * | 2008-05-14 | 2015-01-06 | Toyoda Gosei Co., Ltd. | Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp |
BRPI1008737B1 (pt) * | 2009-02-25 | 2019-10-29 | Nichia Corp | método para fabricar elemento semicondutor |
JP2011040564A (ja) * | 2009-08-11 | 2011-02-24 | Toshiba Corp | 半導体素子の製造方法および製造装置 |
TWI508327B (zh) | 2010-03-05 | 2015-11-11 | Namiki Precision Jewel Co Ltd | An internal modified substrate for epitaxial growth, a multilayer film internal modified substrate, a semiconductor device, a semiconductor bulk substrate, and the like |
KR20110124112A (ko) | 2010-05-10 | 2011-11-16 | 경희대학교 산학협력단 | 레이저 리프트 오프 공정을 이용한 플렉서블 cis계 태양전지의 제조 방법 |
JP5653110B2 (ja) | 2010-07-26 | 2015-01-14 | 浜松ホトニクス株式会社 | チップの製造方法 |
JP2013042119A (ja) * | 2011-07-21 | 2013-02-28 | Hamamatsu Photonics Kk | 発光素子の製造方法 |
JP2015516672A (ja) * | 2012-02-26 | 2015-06-11 | ソレクセル、インコーポレイテッド | レーザ分割及び装置層移設のためのシステム及び方法 |
US9455229B2 (en) * | 2012-04-27 | 2016-09-27 | Namiki Seimitsu Houseki Kabushiki Kaisha | Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor element |
JP2014041924A (ja) | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
JP6318900B2 (ja) * | 2014-06-18 | 2018-05-09 | 日亜化学工業株式会社 | 半導体発光素子の製造方法 |
KR20200006641A (ko) | 2014-11-27 | 2020-01-20 | 실텍트라 게엠베하 | 재료의 전환을 이용한 고체의 분할 |
US9697989B2 (en) * | 2015-02-26 | 2017-07-04 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for generating parameter pattern, ion implantation method and feed forward semiconductor manufacturing method |
DE102015006971A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern |
JP6478801B2 (ja) * | 2015-05-19 | 2019-03-06 | 株式会社ディスコ | ウエーハの加工方法 |
JP6265175B2 (ja) * | 2015-06-30 | 2018-01-24 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
JP6789675B2 (ja) * | 2016-06-02 | 2020-11-25 | ローム株式会社 | 半導体発光素子およびその製造方法 |
KR102551442B1 (ko) | 2017-04-20 | 2023-07-06 | 실텍트라 게엠베하 | 정의된 방향의 수정 라인으로 웨이퍼를 생산하는 방법 |
JP6994852B2 (ja) | 2017-06-30 | 2022-01-14 | 株式会社ディスコ | レーザー加工装置及びレーザー加工方法 |
JP6957252B2 (ja) * | 2017-07-20 | 2021-11-02 | 岩谷産業株式会社 | 切断加工方法 |
DE102017007586A1 (de) * | 2017-08-11 | 2019-02-14 | Siltectra Gmbh | Fertigungsanlage zum Abtrennen von Wafern von Spendersubstraten |
JP7217426B2 (ja) * | 2019-02-22 | 2023-02-03 | パナソニックIpマネジメント株式会社 | レーザ加工装置およびレーザ加工方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016062949A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社ディスコ | SiCのスライス方法 |
JP2016111143A (ja) * | 2014-12-04 | 2016-06-20 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017041482A (ja) * | 2015-08-18 | 2017-02-23 | 株式会社ディスコ | ウエーハの加工方法 |
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