TWI726155B - 雙載子接面電晶體 - Google Patents

雙載子接面電晶體 Download PDF

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TWI726155B
TWI726155B TW106131547A TW106131547A TWI726155B TW I726155 B TWI726155 B TW I726155B TW 106131547 A TW106131547 A TW 106131547A TW 106131547 A TW106131547 A TW 106131547A TW I726155 B TWI726155 B TW I726155B
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metal gate
junction transistor
carrier junction
transistor according
ion well
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TW201916362A (zh
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潘貞維
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聯華電子股份有限公司
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Priority to US15/782,817 priority patent/US9991367B1/en
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Abstract

一種雙載子接面電晶體，包含一射極區，位於一基底上，包含至少一沿一第一方向延伸的鰭狀結構、一第一金屬閘極，沿一第二方向跨過該至少一鰭狀結構、一第二金屬閘極平行該第一金屬閘極而設置，其中該第一金屬閘極與該第二金屬閘極之間具有一介於0.2至0.4微米的間隙。一基極區，環繞該射極區。一集極區，環繞該基極區。

Description

雙載子接面電晶體
本發明係有關於半導體技術領域，特別是有關於一種雙載子接面電晶體。
近年來，由於各種消費類電子產品的小型化，使得半導體元件的尺寸也必須微小化，以滿足高積集度、高性能、低功耗及各種產品需求。然而，隨著電子產品的小型化，現有的平面型場效電晶體（planar FET）已逐漸不符產品的要求。因此，該技術領域已發展出諸如鰭式場效電晶體（Fin-FET）等非平面型場效電晶體，以實現高驅動電流並減緩短通道效應。
通常，積體電路（IC）元件，除了互補式金氧半導體CMOS鰭式場效電晶體，另需要其它半導體結構與電晶體，例如二極體與雙載子電晶體（BJT）等。若鰭式場效電晶體與所述其它半導體結構與電晶體使用相同的材料及製程形成為最佳，但鰭式場效電晶體具有三維立體結構，因此其形成方法比傳統結構更複雜，要將鰭式場效電晶體形成方法整合至常規的平面型場效電晶體形成方法及形成其它半導體結構與晶體管的方法中困難度較高。
本發明的主要目的在提供一種改良的雙載子接面電晶體，可以解決先前技藝的不足與缺點。
根據本發明一實施例，披露一種雙載子接面電晶體，包含一射極區，位於一基底上，包含至少一沿一第一方向延伸鰭狀結構、一第一金屬閘極，沿一第二方向跨過該至少一鰭狀結構、一第二金屬閘極平行該第一金屬閘極而設置，其中該第一金屬閘極與該第二金屬閘極之間具有一介於0.2至0.4微米的間隙；一基極區，環繞該射極區；及一集極區，環繞該基極區。
其中另包含一第三金屬閘極平行該第一金屬閘極而設置，且沿該第二方向跨過該至少一鰭狀結構。該第一金屬閘極與該第三金屬閘極之間具有一介於0.2至0.4微米的間隙。其中該第一金屬閘極與該第二金屬閘極之間設有一第一磊晶層，該第一金屬閘極與該第三金屬閘極之間設有一第二磊晶層。
根據本發明另一實施例，披露一種雙載子接面電晶體，包含一基底；一射極區，位於一基底上，包含至少一鰭狀結構，沿一第一方向延伸、一第一金屬閘極，沿一第二方向跨過該至少一鰭狀結構、一第二金屬閘極平行該第一金屬閘極而設置；一層間介電層，設於該第一金屬閘極與該第二金屬閘極周圍；一區域接觸插塞，設於該層間介電層中，其中該區域接觸插塞沿著該第一方向沿展，並與介於該第一金屬閘極與該第二金屬閘極之間的該至少一鰭狀結構完全重疊；一基極區，位於該基底上，並環繞該射極區；及一集極區，位於該基底上，並環繞該基極區。
其中，雙載子接面電晶體另包含一第三金屬閘極平行該第一金屬閘極而設置，且沿該第二方向跨過該至少一鰭狀結構。其中該第一金屬閘極與該第三金屬閘極之間具有一介於0.2至0.4微米的間隙，且該第一金屬閘極與該第二金屬閘極之間具有一介於0.2至0.4微米的間隙。
為讓本發明之上述目的、特徵及優點能更明顯易懂，下文特舉較佳實施方式，並配合所附圖式，作詳細說明如下。然而如下之較佳實施方式與圖式僅供參考與說明用，並非用來對本發明加以限制者。
在下文中，將參照附圖說明細節，該些附圖中之內容亦構成說明書細節描述的一部份，並且以可實行該實施例之特例描述方式來繪示。下文實施例已描述足夠的細節俾使該領域之一般技藝人士得以具以實施。
當然，亦可採行其他的實施例，或是在不悖離文中所述實施例的前提下作出任何結構性、邏輯性、及電性上的改變。因此，下文之細節描述不應被視為是限制，反之，其中所包含的實施例將由隨附的申請專利範圍來加以界定。
本發明主要披露一種雙載子接面電晶體。申請人發現要將過去平面型雙載子接面電晶體轉換成含有鰭式結構的雙載子接面電晶體，仍有許多電性上需要改善的地方，例如以14奈米製程製作的含有鰭式結構的雙載子接面電晶體，其中射極區內金屬閘極與金屬閘極間設置SiP磊晶層，使得集極電流（IC ）變得較不均勻。
將來，若以7奈米或以下的更先進製程製作含有鰭式結構的雙載子接面電晶體，其中射極區內其射極金屬閘極之間的間隙將更微縮，整體有效的集極面積將變小，而縮減的M0 接觸插塞接觸面積會導致集極電流（IC ）路徑更集中於M0 接觸插塞正下方，不利於雙載子接面電晶體的電性表現。本發明對此提出解決方案。
請參閱第1圖及第2圖，其中第1圖為依據本發明一實施例所繪示的一種雙載子接面電晶體的上視示意圖，第2圖為沿著第1圖中切線I-I’所示的射極區的剖面示意圖。如第1圖所示，雙載子接面電晶體1包含一基底100，例如一半導體基底或一矽基底，但不限於此。根據本發明一實施例，基底100具有一第一導電型，例如，P型。需理解的是，實施例中雖以NPN型雙載子接面電晶體為例做說明，但熟習該項技藝者應能將所披露的實施例直接或間接的轉換應用到PNP型雙載子接面電晶體。
根據本發明一實施例，在基底100上設有一射極區（emitter region）10，包含複數條鰭狀結構（fin structures）110，沿一第一方向（例如參考座標x軸方向）延伸。根據本發明一實施例，複數條鰭狀結構110彼此以淺溝絕緣結構105絕緣。複數條鰭狀結構110係凸出淺溝絕緣結構105上表面的部分。在基底100上另設有一環狀的基極區（base region）12，位於基底100上，並環繞射極區10。在基底100上另設有一環狀的集極區（collector region）14，位於基底100上，並環繞基極區12。
根據本發明一實施例，基底100上設有一第一離子井102，具有第一導電型，例如，第一離子井102為一P型井，其中射極區10與基極區12均設置在第一離子井102中。根據本發明一實施例，集極區14係設置在一第二離子井104中，其中第二離子井104環繞第一離子井102，且具有一第二導電型，例如，第二離子井104為一N型井。
根據本發明一實施例，雙載子接面電晶體1另包含一深離子井101，具有第二導電型，例如，深離子井101為一深N型井，設置在第一離子井102與第二離子井104下方。第二離子井104與深離子井101共同將第一離子井102中包圍住，使第一離子井102與基底100電性隔離。
根據本發明一實施例，射極區10另包含複數條金屬閘極，例如，金屬閘極MG1 ~MG5 ，沿一第二方向（例如參考座標y軸方向）跨過該些鰭狀結構110。需理解的是，圖中所示的金屬閘極數量僅為例示說明。根據本發明一實施例，所述第一方向與該第二方向正交。
根據本發明一實施例，其中射極區10中的所述複數條金屬閘極包含一第一金屬閘極MG1 ，沿所述第二方向跨過鰭狀結構110、一第二金屬閘極MG2 平行第一金屬閘極MG1 而設置，及一第三金屬閘極MG3 平行第一金屬閘極MG1 而設置，且沿所述第二方向跨過鰭狀結構110。第一金屬閘極MG1 介於第二金屬閘極MG2 與第三金屬閘極MG3 中間。
根據本發明一實施例，如第2圖所示，第一金屬閘極MG1 與該第二金屬閘極MG2 間具有一介於0.2至0.4微米的間隙S1 ，第一金屬閘極MG1 與第三金屬閘極MG3 間具有一介於0.2至0.4微米的間隙S2 。根據本發明一實施例，間隙S1 與間隙S2 相等。
根據本發明一實施例，如第1圖中所示，環狀的基極區12內設置有複數條同樣沿著所述第二方向延伸的金屬閘極MGB ，且其金屬閘極MGB 之間具有一介於0.1至0.2微米的間隙S3 ，而環狀的集極區14內設置有複數條同樣沿著所述第二方向延伸的金屬閘極MGC ，且其金屬閘極MGC 之間具有一介於0.1至0.2微米的間隙S4 。根據本發明一實施例，間隙S3 與間隙S4 約略相等，且均小於間隙S1 及S2 。
根據本發明一實施例，第1圖及第2圖中所示的金屬閘極MG1 ~MG5 及金屬閘極MGB 、金屬閘極MGC 均為虛設（dummy）金屬閘極，亦即，在操作時，這些虛設金屬閘極均不會被施加電壓。其中，金屬閘極MG1 ~MG5 及金屬閘極MGB 、金屬閘極MGC 均可以利用已知的金屬閘極製程製作而成，例如，置換金屬閘極（replacement metal gate，RMG）製程。各金屬閘極的結構可以包括介面介電層、高介電常數介電層、阻障層、功函數層或上蓋層等。由於金屬閘極製程為周知技藝，故其細節不另贅述。
根據本發明一實施例，如第2圖所示，第一金屬閘極MG1 與第二金屬閘極MG2 之間設有一第一磊晶層EP1 ，第一金屬閘極MG1 與第三金屬閘極MG3 之間設有一第二磊晶層EP2 。根據本發明一實施例，以NPN型雙載子接面電晶體為例，第一磊晶層EP1 與第二磊晶層EP2 為SiP磊晶層。根據本發明另一實施例，以PNP型雙載子接面電晶體為例，第一磊晶層EP1 與第二磊晶層EP2 為SiGe磊晶層。
根據本發明一實施例，如第2圖所示，雙載子接面電晶體1另包含一層間介電層210，例如矽氧層，設於第一金屬閘極MG1 、第二金屬閘極MG2 及第三金屬閘極MG3 周圍，並且覆蓋住第一金屬閘極MG1 、第二金屬閘極MG2 及第三金屬閘極MG3 。
根據本發明一實施例，如第2圖所示，於層間介電層210中設有複數個接觸插塞CT1 ~CT4 ，其中接觸插塞CT1 與接觸插塞CT2 接觸第一磊晶層EP1 ，且彼此保持一段距離，例如約略為一金屬閘極的寬度。接觸插塞CT3 與接觸插塞CT4 接觸第二磊晶層EP2 ，且彼此保持一段距離，例如約略為一金屬閘極的寬度。這樣做法的優點包括：（1）整體有效的集極面積可以放大；（2）集極電流（IC ）經由接觸插塞CT1 與接觸插塞CT2 進入第一磊晶層EP1 可以較為均勻。接觸插塞CT1 ~CT4 可為柱狀插塞或是跨過複數個鰭狀結構110沿第二方向延伸的槽式（slot）接觸插塞。另外，接觸插塞的數量可依需要調整，不以第2圖所例示者為限，例如在接觸插塞CT1 與接觸插塞CT2 之間可增設一或多個接觸插塞，以進一步使集極電流分布更為均勻。
根據本發明一實施例，接觸插塞CT1 ~CT4 由M0 金屬層所構成，例如，可以包括TiN阻障層及鎢金屬層，但不限於此。後續可以利用其他層金屬層例如M1 及M2 ，或其他內連線結構，形成電路訊號通路。
第3圖為依據本發明另一實施例所繪示的射極區的剖面示意圖。如第3圖所示，根據本發明另一實施例，可以於層間介電層210中設置區域接觸插塞SCT1 及SCT2 ，其中所述區域接觸插塞SCT1 及SCT2 可以是沿著第一方向沿展的槽式（slot）接觸插塞，並分別與介於第一金屬閘極MG1 與第二金屬閘極MG2 之間及介於第一金屬閘極MG1 與第三金屬閘極MG3 之間的鰭狀結構110完全重疊。如此一來，第一磊晶層EP1 的表面即被區域接觸插塞SCT1 完全覆蓋，第二磊晶層EP2 的表面即被區域接觸插塞SCT2 完全覆蓋。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1‧‧‧雙載子接面電晶體10‧‧‧射極區12‧‧‧基極區14‧‧‧集極區100‧‧‧基底101‧‧‧深離子井102‧‧‧第一離子井104‧‧‧第二離子井105‧‧‧淺溝絕緣結構110‧‧‧鰭狀結構210‧‧‧層間介電層CT1~CT4‧‧‧接觸插塞EP1‧‧‧第一磊晶層P2‧‧‧ 第二磊晶層MG1~MG5‧‧‧金屬閘極MGB‧‧‧金屬閘極MGC‧‧‧金屬閘極S1~S4‧‧‧間隙SCT1、SCT2‧‧‧區域接觸插塞
第1圖為依據本發明一實施例所繪示的一種雙載子接面電晶體的上視示意圖。 第2圖為沿著第1圖中切線I-I’所示的射極區的剖面示意圖。 第3圖為依據本發明另一實施例所繪示的射極區的剖面示意圖。
1‧‧‧雙載子接面電晶體
10‧‧‧射極區
12‧‧‧基極區
14‧‧‧集極區
102‧‧‧第一離子井
104‧‧‧第二離子井
105‧‧‧淺溝絕緣結構
110‧‧‧鰭狀結構
210‧‧‧層間介電層
EP1‧‧‧第一磊晶層
EP2‧‧‧第二磊晶層
MG1~MG5‧‧‧金屬閘極
MGB‧‧‧金屬閘極
MGC‧‧‧金屬閘極
S1~S4‧‧‧間隙

Claims (20)

  1. 一種雙載子接面電晶體，包含： 一射極區，位於一基底上，包含至少一沿一第一方向延伸的鰭狀結構、一第一金屬閘極，沿一第二方向跨過該至少一鰭狀結構、一第二金屬閘極平行該第一金屬閘極而設置，其中該第一金屬閘極與該第二金屬閘極之間具有一介於0.2至0.4微米的間隙； 一基極區，環繞該射極區；及 一集極區，環繞該基極區。
  2. 如請求項1所述的雙載子接面電晶體，其中另包含一第三金屬閘極平行該第一金屬閘極而設置，且沿該第二方向跨過該至少一鰭狀結構。
  3. 如請求項2所述的雙載子接面電晶體，其中該第一金屬閘極與該第三金屬閘極之間具有一介於0.2至0.4微米的間隙。
  4. 如請求項3所述的雙載子接面電晶體，其中該第一金屬閘極與該第二金屬閘極之間設有一第一磊晶層，該第一金屬閘極與該第三金屬閘極之間設有一第二磊晶層。
  5. 如請求項4所述的雙載子接面電晶體，其中該第一磊晶層與該第二磊晶層為SiP磊晶層。
  6. 如請求項4所述的雙載子接面電晶體，其中該第一磊晶層與該第二磊晶層為SiGe磊晶層。
  7. 如請求項1所述的雙載子接面電晶體，其中該第一方向與該第二方向正交。
  8. 如請求項1所述的雙載子接面電晶體，其中該基底為一半導體基底，具有一第一導電型，且在該基底上設有一第一離子井，具有該第一導電型，其中該射極區與該基極區均設置在該第一離子井中。
  9. 如請求項8所述的雙載子接面電晶體，其中該集極區係設置在一第二離子井中，該第二離子井環繞該第一離子井，且具有一第二導電型。
  10. 如請求項9所述的雙載子接面電晶體，其中另包含一深離子井，具有該第二導電型，設置在該第一離子井與該第二離子井下方。
  11. 一種雙載子接面電晶體，包含： 一基底； 一射極區，位於一基底上，包含至少一鰭狀結構，沿一第一方向延伸、一第一金屬閘極，沿一第二方向跨過該至少一鰭狀結構、一第二金屬閘極平行該第一金屬閘極而設置； 一層間介電層，設於該第一金屬閘極與該第二金屬閘極周圍； 一區域接觸插塞，設於該層間介電層中，其中該區域接觸插塞沿著該第一方向沿展，並與介於該第一金屬閘極與該第二金屬閘極之間的該至少一鰭狀結構完全重疊； 一基極區，位於該基底上，並環繞該射極區；及 一集極區，位於該基底上，並環繞該基極區。
  12. 如請求項11所述的雙載子接面電晶體，其中另包含一第三金屬閘極平行該第一金屬閘極而設置，且沿該第二方向跨過該至少一鰭狀結構。
  13. 如請求項12所述的雙載子接面電晶體，其中該第一金屬閘極與該第三金屬閘極之間具有一介於0.2至0.4微米的間隙，且該第一金屬閘極與該第二金屬閘極之間具有一介於0.2至0.4微米的間隙。
  14. 如請求項13所述的雙載子接面電晶體，其中該第一金屬閘極與該第二金屬閘極之間設有一第一磊晶層，該第一金屬閘極與該第三金屬閘極之間設有一第二磊晶層。
  15. 如請求項14所述的雙載子接面電晶體，其中該第一磊晶層與該第二磊晶層為SiP磊晶層。
  16. 如請求項14所述的雙載子接面電晶體，其中該第一磊晶層與該第二磊晶層為SiGe磊晶層。
  17. 如請求項11所述的雙載子接面電晶體，其中該第一方向與該第二方向正交。
  18. 如請求項11所述的雙載子接面電晶體，其中該基底為一半導體基底，具有一第一導電型，且在該基底上設有一第一離子井，具有該第一導電型，其中該射極區與該基極區均設置在該第一離子井中。
  19. 如請求項18所述的雙載子接面電晶體，其中該集極區係設置在一第二離子井中，該第二離子井環繞該第一離子井，且具有一第二導電型。
  20. 如請求項19所述的雙載子接面電晶體，其中另包含一深離子井，具有該第二導電型，設置在該第一離子井與該第二離子井下方。
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