TWI694510B - 晶圓的加工方法及電子元件 - Google Patents
晶圓的加工方法及電子元件 Download PDFInfo
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- TWI694510B TWI694510B TW105121414A TW105121414A TWI694510B TW I694510 B TWI694510 B TW I694510B TW 105121414 A TW105121414 A TW 105121414A TW 105121414 A TW105121414 A TW 105121414A TW I694510 B TWI694510 B TW I694510B
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Abstract
本發明的課題為形成可以確保構成晶圓的元件的抗折強度,並使其產生充分的去疵效果。解決手段是一種對在正面經由複數條交叉的分割預定線劃分而形成有複數個元件的晶圓的背面進行加工的晶圓的加工方法,其包含:背面磨削工序,對在正面形成有元件的晶圓的背面進行磨削,並薄化至預定的厚度;背面研磨工序,對已磨削的晶圓的背面進行研磨以除去磨削應變;及DLC成膜工序,將類鑽碳(DLC)膜成膜在已研磨的晶圓的背面。
Description
本發明是有關於一種可以充分獲得元件的抗折強度以及去疵效果之晶圓的加工方法。
於正面經由分割預定線劃分而形成有IC、LSI等元件的晶圓,是在背面被磨削並形成為預定的厚度後,藉由切割裝置分割成一個個的元件晶片,而分割後的元件晶片則被利用在各種電子機器等上。
此外,對晶圓的背面進行磨削,將晶圓形成為厚度在100μm以下之後,將晶圓積層並將上下的元件的端子彼此連結,使其作為整體而提升機能之稱為MCP(多晶片封裝)之封裝元件也正在供於實用(參照例如專利文獻1)。
元件會在形成於矽基板的正面,且磨削背面而形成為預定的厚度後,經切割而分割成一個個的元件晶片。不過,當對晶圓的背面進行磨削時,會有磨削應變殘留於該背面而使元件的抗折強度降低的問題。因此,已有下列的技術方案被提出:使用研磨墊來研磨經磨削過的背面,藉此除去磨削應變,以提升元件的抗折強度(參照例如專利
文獻2)。此外,也有下列的技術方案被提出:藉由電漿CVD法或將矽氮化之方法來形成氮化矽膜,而形成捕獲重金屬的去疵層(參照例如專利文獻3)。
專利文獻1:日本專利特開2009-26992號公報
專利文獻2:日本專利特開2006-80329號公報
專利文獻3:日本專利特開2009-117653號公報
不過,以CVD法成膜出氮化矽膜需耗費時間,生產性不高。此外,在令基板的矽氮化以得到氮化矽膜的方法上,會在矽中產生應力,而容易發生翹曲。
本發明是有鑑於這樣的問題而作成的發明,其目的在於可以做到確保構成晶圓的元件的抗折強度,並使其產生充分的去疵效果。
本發明的晶圓的加工方法,是對在正面經由複數條交叉的分割預定線劃分而形成有複數個元件的晶圓的背面進行加工的晶圓的加工方法,其具備:背面磨削工序,對在正面形成有元件之晶圓的背面進行磨削,並薄化至預定的厚度;背面研磨工序,對已磨削的晶圓的背面進行研磨以除
去磨削應變;及DLC成膜工序,將類鑽碳(DLC)膜成膜在已研磨的晶圓的背面。此晶圓的加工方法中,DLC膜宜將其厚度設定為10~100nm。
又,本發明的電子元件是在背面形成DLC膜而構成的。
在本發明的晶圓的加工方法中,因為在晶圓的背面成膜出DLC膜,所以可以做到確保構成晶圓的元件的抗折強度,並且可以使其產生充分的去疵效果。此外,本發明的電子元件因為在背面形成有DLC膜,所以可以確保抗折強度,並且使其產生充分的去疵效果。
1~61‧‧‧晶片(元件)
100、101、102‧‧‧DLC膜
110‧‧‧孔
111‧‧‧基台
112‧‧‧球狀壓頭
200‧‧‧雷射加工裝置
201、301、90‧‧‧保持台
202‧‧‧雷射照射頭
203‧‧‧雷射光束
204、207‧‧‧改質層
205、208、212‧‧‧裂痕
206、209、213‧‧‧分割溝
210‧‧‧雷射光束
211、404‧‧‧加工溝
300‧‧‧擴張裝置
302‧‧‧框架支持台
303‧‧‧活塞
304‧‧‧汽缸
400‧‧‧切削裝置
401、70、80‧‧‧工作夾台
402‧‧‧轉軸
403‧‧‧切削刀片
7‧‧‧磨削裝置
71‧‧‧磨削機構
72、82‧‧‧旋轉軸
73、83‧‧‧安裝座
74‧‧‧磨削輪
75、85‧‧‧基台
76‧‧‧磨削磨石
8‧‧‧研磨裝置
81‧‧‧研磨機構
84‧‧‧研磨輪
86‧‧‧研磨墊
9‧‧‧成膜裝置
900‧‧‧支持構件
901‧‧‧電極
91‧‧‧氣體噴出頭
910‧‧‧氣體擴散空間
911‧‧‧氣體導入口
912‧‧‧氣體吐出口
913‧‧‧氣體配管
92‧‧‧腔室
920‧‧‧搬入搬出口
921‧‧‧閘閥
93‧‧‧氣體供給部
94‧‧‧整合器
95‧‧‧高頻電源
96‧‧‧排氣管
97‧‧‧排氣裝置
98‧‧‧控制部
A1、A2、A3、A4‧‧‧方向
A5‧‧‧箭頭
a‧‧‧孔的半徑
a0‧‧‧元件的半徑
a1‧‧‧接觸半徑
C、Ca、Cb‧‧‧晶片
C2、C2’、Ca2、Cb2‧‧‧背面
C3、C4、C5‧‧‧側面
D‧‧‧元件
F‧‧‧框架
H‧‧‧厚度
L‧‧‧分割預定線
r‧‧‧球狀壓頭的半徑
T‧‧‧保護膠帶
T1、T2、T4‧‧‧擴張膠帶
T3‧‧‧膠帶
WF‧‧‧晶圓
W1‧‧‧正面
W2、W2’、W2”‧‧‧背面
圖1是顯示晶圓及正面保護膠帶的分解立體圖。
圖2是顯示背面磨削工序的立體圖。
圖3是顯示背面研磨工序的立體圖。
圖4是顯示成膜裝置的例子的剖面圖。
圖5是顯示第1實施形態的改質層形成工序的剖面圖。
圖6是顯示第1實施形態的背面磨削工序的剖面圖。
圖7是顯示第1實施形態的背面研磨工序的剖面圖
圖8是顯示第1實施形態的DLC成膜工序的剖面圖。
圖9是顯示第1實施形態的擴張工序的剖面圖。
圖10是顯示第1實施形態的背面磨削工序的剖面圖。
圖11是顯示第2實施形態的改質層形成工序的剖面
圖。
圖12是顯示第2實施形態的背面研磨工序的剖面圖。
圖13是顯示第2實施形態的擴張工序的剖面圖。
圖14是顯示第2實施形態的DLC成膜工序的剖面圖。
圖15是顯示以雷射光束照射進行的正面溝形成工序的剖面圖。
圖16是顯示以切削進行的正面溝形成工序的剖面圖。
圖17是顯示第3實施形態的背面研磨工序的剖面圖。
圖18是顯示第3實施形態的擴張工序的剖面圖。
圖19是顯示第3實施形態的DLC成膜工序的剖面圖。
圖20是顯示試驗對象的晶圓的構成的平面圖。
圖21是顯示抗折強度試驗的狀態的剖面圖。
圖1所示的晶圓WF是顯示本發明的適用對象的晶圓之一例,此晶圓WF在正面W1之由分割預定線L所劃分的區域中形成有複數個電子元件D。以下說明在此晶圓WF的背面W2實施磨削加工以及研磨加工後,在已研磨的面上成膜出類鑽碳(DLC)膜的方法。
(1)背面磨削工序
首先,在晶圓WF的正面W1上貼附保護膠帶T。此保護膠帶T是例如在由聚氯乙烯等形成的片狀基材的表面塗布丙烯酸樹脂系的接著層而構成,藉由將該接著層貼附在晶圓WF的正面W1上,以保護正面W1。
接著,將保護膠帶T側吸引保持在圖2所示的磨削裝置7的工作夾台70上,而成為晶圓WF的背面W2露出的狀態。此磨削裝置7上具備有在旋轉軸72的下端的安裝座73上裝設磨削輪74而構成的磨削機構71,磨削輪74是將複數個磨削磨石76圓環狀地固接在基台75的下表面而構成的。磨削磨石76是由例如將鑽石磨粒以黏結劑固定而構成的。
在磨削裝置7中是使工作夾台70朝例如A1方向旋轉,並且使旋轉軸72朝A2方向旋轉,且使磨削機構71下降以使旋轉的磨削磨石76接觸於晶圓WF的背面W2,以磨削背面W2。磨削中,是形成使磨削磨石76的旋轉軌道通過晶圓WF的中心。然後,當將晶圓WF形成為預定的厚度時,會使磨削機構71上升而結束磨削。
(2)背面研磨工序
接著,將要研磨背面W2且於正面W1貼附有保護膠帶T的晶圓WF搬送至圖3所示的研磨裝置8。此研磨裝置8具備有可將晶圓WF保持並旋轉的工作夾台80、以及在旋轉軸82的下端的安裝座83裝設研磨輪84而構成的研磨機構81。研磨輪84是在基台85的下表面固接圓形的研磨墊86而構成的。研磨墊86是由例如不織布、泡沫聚胺甲酸乙酯等構成,且形成為直徑大於晶圓W。
晶圓WF是使保護膠帶T側在工作夾台80上被吸引保持,而使已磨削的背面W2’露出。然後,使工作夾台80朝例如A3方向旋轉,並且使旋轉軸82朝A4方向旋轉,且使研磨機構81下降以使旋轉的研磨墊86接觸於晶圓WF的背
面W2’的整個面,而研磨該背面W2’。研磨時,是使研磨墊86的下表面整個面與背面W2’接觸。然後,當已將晶圓WF’的背面W2’的磨削應變去除時,會使研磨機構81上升而結束研磨。
再者,也可做成使用具備有圖2所示的磨削機構71以及圖3所示的研磨機構81的裝置,而在單1個裝置上實施背面磨削工序與背面研磨工序。此外,背面研磨工序不僅可藉由研磨墊進行的研磨來進行,也可藉由例如由高網目磨石進行的磨削、蝕刻等而進行。
(3)DLC成膜工序
已藉由研磨工序將背面的磨削應變去除的晶圓WF可搬送至例如圖4所示的成膜裝置9。此成膜裝置9具備有保持晶圓WF的保持台90、噴出氣體的氣體噴出頭91、將保持台90以及氣體噴出頭91收容在內部的腔室92。
保持台90被支持構件900從下方支持。保持台90的內部配設有電極901,並將此電極901接地。
氣體噴出頭91的內部設置有氣體擴散空間910,並於氣體擴散空間910的上部連通氣體導入口911,於氣體擴散空間910的下部連通氣體吐出口912。氣體吐出口912的下端是朝向保持台90側開口。
氣體導入口911是透過氣體配管913而連接有氣體供給部93。氣體供給部93分別儲存有成膜氣體與惰性氣體。
氣體噴出頭91是透過整合器94而連接有高頻電
源95。藉由從高頻電源95透過整合器94供給高頻電力至氣體噴出頭91,可使從氣體吐出口912吐出的氣體電漿化。
腔室92的下部連接有排氣管96,此排氣管95連接有排氣裝置97。藉由使此排氣裝置97作動,可將腔室92的內部減壓至預定的真空度。
腔室92的側部設置有用以進行晶圓WF的搬入搬出的搬入搬出口920、及開閉此搬入搬出口920的閘閥921。
成膜裝置9具備有控制部98,在控制部98的控制下,各氣體的吐出量或時間、高頻電力等條件都受到管制。
在DLC成膜工序中,是打開閘閥921,並從搬入搬出口920搬入晶圓WF。然後,以排氣裝置97令腔室92內排氣,使腔室92內的壓力成為例如0.10~0.15Pa,並且使儲存於氣體供給部93的成膜氣體,經過氣體配管913以及氣體導入口911而從氣體吐出部912噴出。成膜氣體使用例如甲苯(C7H8)。除了甲苯(C7H8)以外,也能使用例如C2H2、C4H6、C6H6等的烴氣作為成膜氣體。此外,C4H4O、C4H8O等含有碳、氫以及氧的氣體(CxHyOz)也可作為成膜氣體來使用。
將成膜氣體導入腔室92內,並且將保持台90的溫度設定為例如膠帶T不會變形的溫度之70℃以下,從高頻電源95對氣體噴出頭91施加高頻電力(例如RF高頻率:13.56MHz(平行平板型)、RF輸出:1kW),藉此使其在氣體噴出頭91與保持台90之間產生高頻電場,而使成膜氣體電漿化。如此一來,非晶碳的一種之類鑽碳(DLC)會逐漸成膜於晶圓WF的經研磨後的背面的W2”上。然後,藉由將所述
的成膜進行預定時間,以成膜出預定厚度的非晶碳膜。
在成膜過程中,除了成膜氣體之外,也可以從氣體供給部93導入Ar等惰性氣體作為稀釋氣體。惰性氣體的電漿能夠對晶圓WF的背面的W2”進行濺鍍,除去附著於晶圓背面的有機物等,以清淨化背面W2”。此外,由於He等惰性氣體可協助成膜氣體電漿化,故可促進成膜氣體的電漿化。惰性氣體可因應用途而使用例如氦(He)、氬(Ar)等。另外,對腔室92之惰性氣體的導入也可在成膜氣體的導入前進行。
若使用含氧的氣體作為成膜氣體時,由於是一邊使氧電漿除去已成膜的DLC膜之較弱部分一邊進行成膜,因此可形成更細緻的DLC膜。此外,藉由控制成膜氣體中含有的氫的量,可以控制DLC膜的硬度。
然後,可藉由切削刀片或雷射照射等周知的方法,沿著圖1所示的分割預定線L分割成一個個的晶片。這個時候,除了以切削刀片或照射雷射光而進行的全切(full cut)所形成的切斷外,也可以進行半切(half cut)、或者在沿著分割預定線L照射雷射光而形成改質層後,對晶圓施加外力,以分割成一個個的晶片。
另外,也可以在將晶圓WF分割成一個個的晶片後,再於一個個的晶片的背面成膜出DLC膜。作為該方法,有例如以下所示的第1實施形態至第3實施形態。
[第1實施形態]
(1-1)改質層形成工序
首先,如圖5所示,在晶圓WF的正面W1貼附保護膠帶T。然後,在雷射加工裝置200的保持台201上保持保護膠帶T側,而使晶圓W的背面W2露出。
接著,從雷射照射頭202朝向晶圓WF的背面W2照射對晶圓WF具有穿透性之波長的雷射光束203,且沿著圖1所示的分割預定線L聚光於內部,以形成改質層204。改質層204是形成於會藉由之後的背面磨削而除去的部分上。例如,當晶圓W的最終的成品厚度為H時,是做成使改質層204的下端位於比距離正面W1相當於H之上方的位置更往上方處。如此進行,而沿著所有的分割預定線L在晶圓WF的內部形成改質層204。
(1-2)背面磨削工序
接著,如圖6所示,在圖2所示的磨削裝置7的工作夾台70上保持保護膠帶T側。然後,使工作夾台70朝A1方向旋轉,並且一邊使磨削輪74朝A2方向旋轉一邊使磨削機構71下降,以使旋轉的磨削磨石76接觸並磨削晶圓WF的背面W2。如此一來,就可從改質層204向正面W1形成裂痕205而使晶圓WF沿著分割預定線L被分割成一個個的晶片C。然後,當磨削至背面W2’而將晶圓W(晶片C)形成為厚度H時,會使磨削機構71上升來結束磨削。
(1-3)背面研磨工序
背面磨削工序結束後,如圖7所示,在研磨裝置8的工作夾台80上保持保護膠帶T側。然後,使工作夾台80朝A3方向旋轉,並且一邊使研磨輪84朝A4方向旋轉一邊使研磨
機構81下降,以研磨晶片C的背面C2並除去磨削應變。
再者,若在背面磨削工序中並未形成裂痕205的情形下,也有在本工序中形成裂痕來將晶圓WF分割成一個個的晶片C之作法。此外,背面研磨工序不僅可藉由研磨墊進行的研磨來進行,也可藉由例如由高網目磨石進行的磨削、或蝕刻等而進行。
(1-4)DLC成膜工序
接著,如圖8所示,將DLC膜100成膜在一個個的晶片C的研磨後的背面C2’上。成膜的方法與圖4所示的在晶圓WF的背面W2”進行成膜的方法相同。由於藉由背面磨削工序除去晶片側壁的改質層、及/或藉由研磨工序除去結晶應變,可能會使側壁或背面側的去疵效果消滅,因此成膜出DLC膜來使其產生去疵效果之作法是有效的。
此外,在本工序中,與在晶圓W的背面進行成膜的狀況不同,由於相鄰的晶片C之間有間隔,因此可將DLC膜100也被覆到晶片C的側面C3。圖5及圖6所示的改質層204雖然是具有去疵效果的改質層204,但會因背面磨削工序除去改質層204而失去疵效果。不過,藉由在本工序中令DLC膜100也被覆於側面C3,可以使其在各個晶片C上產生去疵效果。
另外,若在本實施形態的背面磨削工序或背面研磨工序中,圖6所示的裂痕205未達正面W1,而未能將晶圓W分割成一個個的晶片C時,會在背面磨削工序或背面研磨工序後,實施圖9所示的擴張工序。在擴張工序中,如圖9
所示,是將已磨削的背面W2’或已研磨的背面W2”貼附在擴張膠帶T1上,並將框架F貼附在擴張膠帶T1的外周部。然後,將擴張膠帶T1側保持在擴張裝置300的保持台301上,並且將框架F載置並固定在框架支持台302上。此框架支持台302是固定在活塞303上,並藉由汽缸304升降活塞303而升降。
當使固定有框架F的框架支持台302下降時,會形成分割溝206而分割成一個個的晶片C。另外,即使進行擴張也未能分割時,也可回到背面磨削工序或背面研磨工序,之後再度實施擴張工序。
[第2實施形態]
(2-1)背面磨削工序
首先,如圖10所示,在晶圓WF的正面W1上貼附保護膠帶T,再將保護膠帶T側保持在圖2所示的磨削裝置7的工作夾台70上。然後,使工作夾台70朝A1方向旋轉,並且一邊使磨削輪74朝A2方向旋轉一邊使磨削機構71下降,以使旋轉的磨削磨石76接觸並磨削晶圓WF的背面W2。然後,當磨削至背面W2’而將晶圓WF形成為預定的厚度H時,會使磨削機構71上升來結束磨削。
(2-2)改質層形成工序
接著,如圖11所示,將保護膠帶T側保持在雷射加工裝置200的保持台201上,並使晶圓W的已磨削的背面W2’露出。然後,從雷射照射頭202朝向晶圓WF的背面W2’照射對晶圓WF具有穿透性之波長的雷射光束203,並沿著圖1所示的分割預定線L聚光於內部,以形成改質層207。如此進行,以
沿著所有的分割預定線L在晶圓WF的內部形成改質層207。
(2-3)背面研磨工序
接著,如圖12所示,將保護膠帶T側保持在研磨裝置8的工作夾台80上。然後,使工作夾台80朝A3方向旋轉,並且一邊使研磨輪84朝A4方向旋轉一邊使研磨機構81下降,以研磨晶圓W的已進行過背面磨削之背面W2’並除去磨削應變。當以改質層207為起點並藉由研磨形成裂痕208時,就可分割成一個個的晶片Ca。另外,若將改質層207形成於能在背面研磨工序中除去的位置上,在一個個的晶片Ca上就不會殘留改質層207,故不會招致抗折強度降低。此外,背面研磨工序,不僅可藉由研磨墊進行的研磨來進行,也可藉由例如由高網目磨石進行的磨削、蝕刻等而進行。
(2-4)擴張工序
在背面研磨工序中未形成裂痕208而未能分割成晶片Ca的情況下,會實施圖13所示的擴張工序。在擴張工序中,是將已研磨的背面W2”貼附在擴張膠帶T2上,並將框架F貼附在擴張膠帶T2的外周部。然後,將擴張膠帶T2側保持在擴張裝置300的保持台301上,並且將框架F載置並固定在框架支持台302上。此框架支持台302是固定在活塞303上,並藉由汽缸304升降活塞303而升降。
當使固定有框架F的框架支持台302下降時,會以改質層207為起點而形成分割溝209並分割成一個個的晶片Ca。另外,在即使進行擴張也未能分割的情形下,也可回
到背面研磨工序並進行背面研磨,之後再度實施擴張工序。
(2-5)DLC成膜工序
接著,如圖14所示,將DLC膜101成膜在一個個的晶片Ca的已研磨的背面Ca2上。成膜的方法與圖4所示的在晶圓WF的背面W2”上進行成膜的方法相同。藉由背面研磨工序除去結晶應變,可能會使背面側的去疵效果消滅,因此成膜出DLC膜來使其產生去疵效果之作法是有效的。
此外,在本工序中,由於相鄰的晶片Ca之間會有間隔,因此可將DLC膜101也被覆到晶片Ca的側面C4。由於連側面C4也被覆有DLC膜101,因此可提高各晶片Ca的去疵效果。
[第3實施形態]
(3-1)背面磨削工序
首先,如圖10所示,在晶圓WF的正面W1貼附保護膠帶T,並將保護膠帶T側保持在圖2所示的磨削裝置7的工作夾台70上。然後,使工作夾台70朝A1方向旋轉,並且一邊使磨削輪74朝A2方向旋轉一邊使磨削機構71下降,以使旋轉的磨削磨石76接觸並磨削晶圓WF的背面W2。然後,當磨削至背面W2’而將晶圓WF形成為預定的厚度H時,會使磨削機構71上升來結束磨削。
(3-2)正面溝形成工序
接著,如圖15所示,從正面W1剝離保護膠帶T,並且將膠帶T3貼附在背面W2’上,將膠帶T3側保持在雷射加工
裝置200的保持台201上,使晶圓W的正面W1露出。然後,從雷射照射頭202朝向晶圓WF的背面W2’照射對晶圓WF具有吸收性之波長的雷射光束210,並沿著圖1所示的分割預定線L聚光於正面W1,以在正面W1形成加工溝211。如此進行,以沿著所有的分割預定線L,在晶圓WF的正面W1形成加工溝211。
在本工序中,也可使用圖16所示的切削裝置400。該情況下,是將膠帶T3側保持在切削裝置400的工作夾台401上。然後,使裝設在主軸402的切削刀片403一邊旋轉一邊下降,以使其沿著分割預定線L切入。此時,以切削刀片403不貫通晶圓WF之方式將切入深度控制在預定深度,藉此,在正面W1上形成加工溝404。如此進行,以使切削刀片403沿著所有的分割預定線L切入而形成加工溝404。
另外,也可以做成使用切割膠帶作為用以在上述雷射加工裝置200或切削裝置400中貼附在背面W2’上的膠帶T3,並藉由將環狀的框架貼附在切割膠帶的外周部,以讓晶圓WF透過切割膠帶受到框架所支持。
(3-3)背面研磨工序
接著,如圖17所示,從背面W2’剝離膠帶T3,並且將保護膠帶T貼附在正面W1上,再將保護膠帶T側保持在研磨裝置8的工作夾台80上。然後,使工作夾台80朝A3方向旋轉,並且一邊使研磨輪84朝A4方向旋轉一邊使研磨機構81下降,以研磨晶圓W的已進行過背面磨削之背面W2’並除去磨削應變。當藉由研磨而以加工溝211(404)為起點形成裂痕212
時,就可分割成一個個的晶片Cb。另外,背面研磨工序,不僅可藉由研磨墊進行的研磨來進行,也可藉由例如高網目磨石進行的磨削、蝕刻等而進行。
(3-4)擴張工序
在背面研磨工序中,晶圓WF未被分割成一個個的晶片Cb時,會進行擴張工序。在本工序中,如圖18所示,是將擴張膠帶T4貼附在研磨後的背面W2”上,並將框架F貼附在擴張膠帶T4的外周部。然後,將擴張膠帶T2側保持在擴張裝置300的保持台301上,並且將框架F載置並固定在框架支持台302上。此框架支持台302是固定在活塞303上,並藉由汽缸304升降活塞303而升降。
當固定有框架F的框架支持台302下降時,會以加工溝211(404)為起點而形成分割溝213並分割成一個個的晶片Cb。另外,在即使進行擴張也未能分割的情形下,也可回到背面研磨工序並進行背面研磨,之後再度實施擴張工序。
(5)DLC成膜工序
接著,如圖19所示,將DLC膜102成膜在一個個的晶片Cb的已研磨的背面Cb2上。成膜的方法與圖4所示的在晶圓WF的背面W2”上進行成膜的方法相同。由於相鄰的晶片Cb之間會有間隔,因此可將DLC膜102也被覆到晶片Cb的側面C5。由於連側面C5也被覆有DLC膜102,因此可提高各晶片Cb的去疵效果。
另外,在第3實施形態中,背面磨削工序與正面
溝形成工序,也可以將順序設成相反來實施。
為了求出用於適切地確保元件的去疵效果的DLC膜的膜厚,進行了試驗。具體而言,是在經過上述背面磨削工序與背面研磨工序的複數個晶圓的背面上,分別成膜出不同膜厚的DLC膜,再以銅分別強制地污染各個晶圓後,進行去疵效果的測定,且針對DLC膜的膜厚與去疵效果的關係進行了考察。此外,也和去疵效果的測定一起而進行了抗折強度試驗。在本試驗中,晶圓使用的是以下之晶圓。
晶圓:矽晶圓
晶圓的直徑:8英吋
晶圓的厚度(元件的厚度):200μm(背面研磨後)
元件尺寸:10mm×10mm
每1片晶圓的元件數:61(參照圖5)
(1)去疵效果試驗
(A)DLC成膜步驟
準備3片背面已經磨削以及研磨過的晶圓,以前述的DLC成膜工序,在該3片晶圓的背面上,分別被覆膜厚為100[nm]、50[nm]、10[nm]的氮化矽膜。然後,對這些晶圓的全部分別執行以下的(A)~(D)的步驟。
(B)強制污染步驟
對於上述所有的晶圓,在成膜有DLC的面上,會塗佈相當於直徑8英吋的晶圓的該背面的面積,1.0×1013
[atoms/cm2]的Cu標準液(硫酸銅),而對全部的元件進行以銅形成的強制污染。
(C)加熱步驟
針對所有的晶圓,在使Cu標準液乾燥後,以350℃的溫度加熱3小時,做成讓晶圓內的銅原子容易擴散的狀態。
(D)測定步驟
將所有的晶圓冷卻,並使用TXRF(X射線全反射螢光光譜分析裝置:TECHNOS株式會社製造)分別對其每一個測定塗佈有Cu標準液的背面的相反面(正面)的銅原子量。詳細而言,是將晶圓的正面分割成以15mmx15mm所劃分的區域,分別針對每一個區域逐一地測定銅原子量,求出平均值與最大值。另外,進行強制污染步驟前,以同樣的方法測定銅原子的檢測量。
在本步驟中,在晶圓的正面檢測出銅原子的情形下,可以判斷為銅原子往內部擴散,且去疵效果不存在或不充分。另一方面,在元件的正面未檢測出銅原子的情形下,可以判斷為銅原子被氮化矽膜側捕捉,有充分的去疵效果。測驗結果如以下的表1所示。另外,用於判斷是否檢測出銅原子的閾值是設為0.5×1010[atoms/cm2]。
如由上述表1的試驗結果可得知的,強制污染後,不論在哪個晶圓上,都可確認到銅原子的檢測量小於閾值,
而在形成有DLC膜的晶圓上具有去疵效果之情形。
(2)抗折強度試驗
如圖5所示,晶圓WF是由晶片編號為1~61的61個晶片所構成。對於如此的晶圓WF,於執行上述DLC成膜步驟後,分割成一個個的晶片,並按每個晶片測定抗折強度。另外,在DLC成膜步驟中,將膜厚設定為100[nm]、50[nm]、10[nm]。此外,對於僅實施背面磨削工序的晶圓、與實施背面磨削工序以及背面研磨工序的晶圓,也都測定了抗折強度。測定抗折強度的具體方法如以下所示。
(E)抗折強度測定步驟
使用株式會社島津製作所製的壓縮試驗機(AGI-1kN9),測定了各個晶片的抗折強度。具體的測定方法如以下所示。
(E)-1
如圖6所示,分別將各晶片1~61載置在於中央部形成有圓形的孔110的基台111上。此時,使被覆在背面的DLC膜成為位在下方。
(E)-2
以具有球面的球狀壓頭112對各晶片1~61向下(箭頭A5方向)按壓。
(E)-3
在各晶片1~61被分割的瞬間,使用以下的式(1)計算抗折強度δ。
在上述式(1)中,各變數的意義以及值是如以下所示(參照圖16)。
W:破壞強度(測定時所獲得的值)[kgf]
h:元件的厚度=200[μm]
v:蒲松比(矽)=0.28
a:孔的半徑=3.5[mm]
a0:元件的半徑=5[mm]
v2:蒲松比(球狀壓頭)=0.3
此外,在上述式(1)中,a1為球狀壓頭112與元件的接觸半徑,並使用以下的式(2)計算。
在上述式(2)中,各變數的意義以及值是如以下所示。
ε1:楊氏模數(矽)=1.31×105[MPa]
ε2:楊氏模數(球狀壓頭)=2.01×104[MPa]
r:球狀壓頭的半徑=3.0[mm]
對所有的晶片進行上述式(1)之抗折強度的計算,並按各膜厚求出抗折強度的平均值。其結果如以下的表2所示。
如表2所示,可確認到的是,成膜有DLC的晶圓的抗折強度全部成為大於1000[MPa],且可獲得與施行磨削+研磨(背面磨削工序以及背面研磨工序)但未成膜出DLC的No.4的晶圓同等以上的抗折強度。
(3)關於最適當的膜厚
從表1所示的去疵效果試驗的結果來看,如上所述,藉由將氮化矽膜的膜厚設定為10[nm]以上,可確保充分的去疵效果。另一方面,如表2的結果所能夠清楚地得知的,當將DLC膜的膜厚設定為10~100[nm]時,就可確保充分的抗折強度。因此,可確認到的是,為了可以獲得充分的去疵效果並且也使抗折強度形成為充分,宜將DLC膜的膜厚設定為10~100[nm]。
9‧‧‧成膜裝置
90‧‧‧持台
900‧‧‧支持構件
901‧‧‧電極
91‧‧‧體噴出頭
910‧‧‧氣體擴散空間
911‧‧‧氣體導入口
912‧‧‧氣體吐出口
913‧‧‧氣體配管
92‧‧‧腔室
920‧‧‧搬入搬出口
921‧‧‧閘閥
93‧‧‧氣體供給部
94‧‧‧整合器
95‧‧‧高頻電源
96‧‧‧排氣管
97‧‧‧排氣裝置
98‧‧‧控制部
T‧‧‧保護膠帶
WF‧‧‧晶圓
W2”‧‧‧背面
Claims (4)
- 一種晶圓的加工方法,是對在正面經由分割預定線劃分而形成有複數個元件的晶圓的背面進行加工的晶圓的加工方法,其至少包含有:分割起點形成工序,在晶圓形成用以分割成一個個晶片的起點,背面磨削工序,對在正面形成有元件的晶圓的背面進行磨削,並形成為預定的厚度;背面研磨工序,對已磨削的晶圓的背面進行研磨以除去磨削應變;及DLC成膜工序,使成膜氣體電漿化以將類鑽碳(DLC)膜成膜在已研磨的一個個晶片的背面及側面,前述一個個晶片是在該背面磨削工序或該背面研磨工序中形成。
- 一種晶圓的加工方法,是對在正面經由分割預定線劃分而形成有複數個元件的晶圓的背面進行加工的晶圓的加工方法,其至少包含有:分割起點形成工序,在晶圓形成用以分割成一個個晶片的起點,背面磨削工序,對在正面形成有元件的晶圓的背面進行磨削,並形成為預定的厚度;背面研磨工序,對已磨削的晶圓的背面進行研磨以除去磨削應變; 擴張工序,將擴張膠帶貼附於晶圓,並擴張該擴張膠帶;及DLC成膜工序,使成膜氣體電漿化以將類鑽碳(DLC)膜成膜在一個個晶片的背面及側面,前述一個個晶片是在該背面磨削工序、該背面研磨工序、或該擴張工序形成。
- 如請求項1或2之晶圓的加工方法,其中,前述DLC膜的厚度為10~100nm。
- 一種電子元件,在背面及側面形成有DLC膜。
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