TWI687522B - 半導體封裝體及其製造方法 - Google Patents
半導體封裝體及其製造方法 Download PDFInfo
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- TWI687522B TWI687522B TW104116920A TW104116920A TWI687522B TW I687522 B TWI687522 B TW I687522B TW 104116920 A TW104116920 A TW 104116920A TW 104116920 A TW104116920 A TW 104116920A TW I687522 B TWI687522 B TW I687522B
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- semiconductor package
- heat dissipation
- aluminum
- insulating member
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 230000017525 heat dissipation Effects 0.000 claims abstract description 49
- 239000002131 composite material Substances 0.000 claims abstract description 41
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 35
- 239000010432 diamond Substances 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 35
- 239000010419 fine particle Substances 0.000 claims abstract description 31
- 229910052709 silver Inorganic materials 0.000 claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000007747 plating Methods 0.000 claims description 39
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- -1 amine compound Chemical class 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 abstract description 28
- 229910001923 silver oxide Inorganic materials 0.000 abstract description 14
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 33
- 239000010931 gold Substances 0.000 description 11
- 239000002344 surface layer Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052778 Plutonium Inorganic materials 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910000498 pewter Inorganic materials 0.000 description 1
- 239000010957 pewter Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Abstract
便宜地提供散熱性優異的半導體封裝體。
根據本發明,提供一種半導體封裝體,其係依序積層有散熱構件、接合層、絕緣構件的半導體封裝體,其特徵為前述散熱構件包含含有金剛石粒子與含鋁的金屬的鋁-金剛石系複合體,接合前述散熱構件和前述絕緣構件的前述接合層係使用包含平均粒徑為1nm以上100μm以下的氧化銀微粒子或者有機被膜銀微粒子的複合材料而形成。
Description
本發明涉及半導體封裝體及其製造方法。
一般而言,光通訊等所使用的半導體雷射元件或高功能MPU(微處理單元)等的半導體元件,為了防止動作不良等,如何有效率地釋放由該元件產生的熱係十分重要的。由於這些半導體元件一般是收納在半導體封裝體內使用,因此為了使此封裝體所收納的半導體元件安全且穩定地動作,而必須效率佳地使當元件動作時產生的熱散發至封裝體外。此散熱通常係藉由從發熱源的半導體元件通過與它接合的散熱構件而使其導熱來達成。
近年來,隨著半導體元件技術的進步,朝元件的高輸出化、高速化、高積體化發展,對其散熱的要求也變得越來越嚴格。因此,一般而言,也對半導體封裝體的散熱構件要求高導熱率,而使用了導熱率高達390W/mK的銅(Cu)。
另一方面,隨著半導體元件的高輸出化,其動作溫度也變高,半導體元件和被直接接合的半導體封裝體的散熱構件的熱膨脹的失配(mismatch)的問題變得明顯。為了解決這些問題,要求開發出兼顧高導熱這
樣的特性、和與半導體元件的熱膨脹率匹配的散熱構件。作為這種材料,有金屬和陶瓷的複合體,例如,鋁(Al)和碳化矽(SiC)的複合體(專利文獻1)。
然而,在Al-SiC系的複合材料料中,無論如何最佳化條件,導熱率都在300W/mK以下,而要求開發出具有銅的導熱率以上的更高導熱率的散熱構件。作為這種材料,組合金剛石所具有的高導熱率和金屬所具有的大熱膨脹率,而提出高導熱率且熱膨脹係數接近半導體元件材料的金屬-金剛石複合材料料(專利文獻2)。
此外,專利文獻3,藉由在金剛石粒子的表面形成β型的SiC層,來抑制當複合化時所形成的低導熱率的金屬碳化物的生成,並且改善與熔融金屬的潤濕性,而改善所得到的金屬-金剛石複合材料料的導熱率。作為此金屬-金剛石複合材料料的最佳形態,提出了使用鋁作為金屬基質(matrix)(專利文獻3)。
專利文獻1 日本特開平9-157773號公報
專利文獻2 日本特開2000-303126號公報
專利文獻3 日本特表2007-518875號公報
在使用包含這些金屬-陶瓷複合體的散熱構件作為半導體封裝體的情況下,在該散熱構件上,使用接合材料A接合絕緣構件,另外在散熱構件上或者是絕緣構件上使用接合材料B接合半導體。這些接合材料一般可使用使用了活性金屬的鑞材等,但若其接合溫度若
是接合材料A的接合溫度比接合材料B還低,則在使用接合材料B之際接合材料A會熔融,因此接合材料A的接合溫度必須比接合材料B高。
在使用以鋁為基質的金屬-陶瓷複合體作為散熱構件的情況下,鋁的熔融溫度在600℃附近,因此一般使用含有金的鑞材作為散熱構件與絕緣構件的接合材料,但金的本體價格高,而有耗費成本這樣的問題。
因此,本發明的目的在於便宜地提供散熱性優異的半導體封裝體。
若根據本發明,則提供一種半導體封裝體,其係依序積層有散熱構件、接合層、絕緣構件的半導體封裝體,其特徵為前述散熱構件包含含有金剛石粒子與含鋁的金屬的鋁-金剛石系複合體,接合前述散熱構件和前述絕緣構件的前述接合層係使用包含平均粒徑為1nm以上100μm以下的氧化銀微粒子或者有機被膜銀微粒子的複合材料而形成。
本發明的一態樣,係在前述半導體封裝體中,鋁-金剛石系複合體的金剛石粒子的含量係前述鋁-金剛石系複合體整體的40體積%以上75體積%以下。
本發明的一態樣,係在前述半導體封裝體中,前述絕緣構件係氧化鋁、氮化矽或者氮化鋁。
本發明的一態樣,係在前述半導體封裝體中,對前述散熱構件和前述接合層的接合部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
本發明的一態樣,係在前述半導體封裝體中,對前述絕緣構件和前述接合層的接合部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
本發明的一態樣,係在前述半導體封裝體中,對前述散熱構件的半導體元件的構裝部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
若根據本發明,則提供一種半導體封裝體的製造方法,其係製造包含散熱構件、絕緣構件和接合層的半導體封裝體的方法,其特徵為包含:在前述散熱構件和前述絕緣構件的接合部設置包含平均粒徑為1nm以上100μm以下的氧化銀微粒子或者有機被膜銀微粒子的複合材料的步驟;和在180℃以上550℃以下的溫度下加熱,將前述複合材料作成接合前述散熱構件和前述絕緣構件的接合層的步驟。
根據本發明,便能便宜地提供散熱性優異的半導體封裝體。
1:絕緣構件
2:散熱構件
3:接合層
4:蓋材接合層
5:蓋材
6:導線
7:焊料接合層
8:半導體
第1圖係本發明的實施形態的半導體封裝體的概念剖面圖。
第2圖係顯示使用本發明的實施形態的半導體封裝體的半導體元件的構裝例的概念剖面圖。
接下來,說明本發明的一實施形態。第1圖係本實施形態的半導體封裝體的概念剖面圖。本實施形態的半導體封裝體係依序積層散熱構件2、接合層3、絕緣構件1而成。
本實施形態的散熱構件2較佳為包含含有金剛石粒子與含鋁的金屬的平板狀的鋁-金剛石系複合體。散熱構件2可以作成包含鋁-金剛石系複合體的複合化部分及在該複合化部分的兩面所設置的表面層的構成。
鋁-金剛石系複合體中的金剛石粒子的含量較佳為包含該鋁-金剛石系複合體的複合化部分和表面層的複合體整體的40體積%以上75體積%以下。若金剛石粒子的含量為40體積%以上的話則可得到充分的導熱率,此外若金剛石粒子的含量為75體積%以下的話則由金剛石粒子和鋁所形成的複合體的形成變得容易。
被覆鋁-金剛石系複合體的複合化部分的兩面的表面層包含鋁合金等的包含主要含鋁的金屬的材料,但也可以包含含鋁的金屬以外的物質。該表面層較佳為包含80質量%以上的鋁。
本實施形態的散熱構件2的厚度較佳為100μm以上5mm以下。若散熱構件2的厚度為100μm以上的話,便能充分得到作為半導體封裝體的材料的強度、剛性,若散熱構件2的厚度為5mm以下的話,則作為構件的成本變得便宜,就半導體封裝體來說是較佳的。
散熱構件2中的表面層的厚度沒有特別的限制,但考量散熱特性變佳,較佳為表背層分別是散熱構件2的厚度的20%以下。
可以對散熱構件2和接合層3的接合部施加鍍敷。此外,散熱構件2係利用焊接來與半導體元件接合使用,因此也可以對散熱構件2的半導體元件的構裝部(散熱構件和半導體元件的接合部)施加鍍敷。
在對散熱構件2施加鍍敷處理的情況下,可以施加鍍Ni、或者考慮焊料潤濕性而施加鍍Ni和鍍Au的二層鍍敷。也可以使用鍍Ag取代鍍Au。鍍敷處理的方法沒有特別的限定,可以是無電解鍍敷處理、電鍍處理法中任一者。
鍍敷的厚度較佳為0.5μm以上10μm以下。若鍍敷厚度為0.5μm以上的話,便能防止鍍敷針孔或焊接時的焊料空隙(void)的產生,能夠確保源自半導體元件的散熱特性。此外,若鍍敷的厚度為10μm以下的話,便能夠不受低導熱率的鍍敷膜的影響而確保源自半導體元件的散熱特性。
關於鍍敷膜的純度,若為不會對焊料潤濕性帶來妨害者的話便沒有特別的制約,可以含有磷、硼等其他成分。
作為本實施形態的接合層3,較佳為使用包含氧化銀微粒子或者有機被膜銀微粒子的複合材料或者是包含氧化銀微粒子及有機被膜銀微粒子的複合材料。
作為上述氧化銀微粒子,可舉出氧化銀(Ag2O、AgO),能使用從它們的群組中所選出的至少1種以上的金屬。
上述有機被膜銀微粒子意指由銀構成的核的周圍由有機保護膜所被覆者。作為有機被膜,若為含有C、H及/或O的有機物的話,便沒有特別的限制,作為其例子,可舉出脂肪族羧酸或胺化合物。
氧化銀微粒子或者有機被膜銀微粒子的平均粒徑,理想的是1nm以上100μm以下,較佳為1nm以上50μm以下。
若平均粒徑為100μm以下的話,便能縮小粒子間的間隙,能得到緻密的接合層。此外,若平均粒徑為1nm以上的話,則金屬氧化物粒子本身的製作變得容易。
此外,關於氧化銀微粒子及有機被膜銀微粒子,能夠混合粒徑小者和粒徑大者,從而更細密地填充銀微粒子。
此外,在使用氧化銀微粒子的情況下,必須併用將表面的氧化銀還原的還原劑,作為還原劑,若為具有將金屬氧化物粒子還原的作用者的話即可。
作為還原劑,例如,除了醇類、羧酸類、胺類以外,也可以使用含有包含醛基或酯基、硫烷基、酮基等的有機物或者是羧酸金屬鹽等的有機物的化合物。
氧化銀微粒子或有機被膜銀微粒子也可以根據需要而分散於溶劑等而作成膏狀的接合材料使用。除了前述還原劑以外,可以對該膏適宜添加分散劑或黏度調整劑、促進燒成的其他金屬成分等。
這些膏中的有機成分,較佳為使用在氧化銀微粒子或者有機被膜銀微粒子的燒成溫度下重量減少95%以上者。若有機成分的重量減少為95%以上的話,便能充分地達成結合層的緻密化。又,在此所謂的重量減少係指利用市售的TG-DTA測定裝置在大氣中用10℃/min的升溫速度進行測定的數值。
接合層3的厚度沒有特別的制約,但考慮接合材料的供給量及接合步驟的簡便性,理想的是5μm以上200μm以下。
作為絕緣構件1的材質,例如,可以使用氧化鋁、氮化鋁、氮化矽、氧化鈹等。
可以對絕緣構件1施加鍍敷。鍍敷處理的方法沒有特別的限定,可以是無電解鍍敷處理、電鍍處理法中任一者。作為具體例,可以是施加鍍Ni、或者鍍Ni和鍍Au的二層鍍敷,也可以使用鍍Ag來取代鍍Au。
鍍敷的厚度較佳為0.5μm以上10μm以下。若鍍敷厚度為0.5μm以上的話,便能防止鍍敷針孔,能夠確保源自半導體元件的散熱特性。此外,若鍍敷的厚度超過10μm,則成本會變高。
藉由對絕緣構件1和接合層3的接合部施加鍍敷,有與接合層3的接合性變佳這樣的效果。
接合層3的對絕緣構件1及散熱構件2的接合溫度比半導體封裝體利用的其他構件的熔點低,且必須充分提高有機溶媒揮發。
此外,為了減低接合後的半導體封裝體的應力,理想的是接合溫度低。具體而言,若為180℃以上550℃以下的接合溫度的話,便可以不對其他構件帶來溫度影響地進行接合。另一方面,在將半導體構裝在所得到的半導體封裝體的步驟中,為了避免當焊料接合時接合層3熔融,接合溫度較佳為300℃以上。
形成本實施形態的接合層3的合適形態之一,係將已經膏化的接合材料塗布在構件間,經過加熱、加壓形成接合層者。但是,接合材料的形態不限於膏狀,也可以使用片狀的接合材料。
上述實施形態的半導體封裝體係便宜且散熱性優異,能夠較佳地適用於功率半導體模組等。
第2圖係顯示使用本發明的實施形態的半導體封裝體的半導體元件的構裝例的概念剖面圖。半導體8係透過焊料接合層7而接合於散熱構件2。蓋材5係透過蓋材接合層4而接合於絕緣構件1。蓋材接合層4的材料能使用Au系鑞材、或者是與接合層3同樣的材料。
以下,舉出實施例及比較例,更詳細地說明本發明。
作為散熱構件的平均粒徑130μm的金剛石粒子的含量係鋁-金剛石系複合體整體的60體積%,將鋁含量為99%以上的鋁表面層係表面背面皆為50μm、整體厚度為1.5mm的鋁金剛石複合體加工成10mm×10mm的尺寸。
作為接合層,係使以質量比1:7的比例混合由胺化合物(辛胺)所被膜的平均粒徑8nm的銀微粒子和平均粒徑190nm的銀微粒子的混合粉末分散於萜品醇而使用固體成分比率70質量%的膏。以10μm的厚度將該膏塗敷在前述鋁-金剛石複合體,使用厚度1mm的氧化鋁作為絕緣構件在真空下在520℃下進行接合,施加鍍Ni,進一步施加鍍Au以得到半導體封裝體。
除了散熱構件、絕緣構件皆為在接合前施加鍍Ni,在接合後施加鍍Au以外,與實施例1同樣地進行以得到半導體封裝體。
除了散熱構件、絕緣構件皆為在接合前施加鍍Ni,進一步施加鍍Au以外,與實施例1同樣地進行以得到半導體封裝體。
作為散熱構件的金剛石粒子的含量係鋁-金剛石系複合體整體的60體積%,將鋁表面層係表面背面皆為50μm、整體厚度為1.5mm的鋁金剛石複合體加工成10mm×10mm的尺寸。
使用Ag:40質量%、Cu:30質量%、Zn:30質量%的鑞材作為接合層。以10μm的厚度將該鑞材的膏塗敷在前述鋁-金剛石複合體,使用厚度1mm的氧化鋁作為絕緣構件在真空下在550℃下進行接合。
在實施例1至3方面,能得到充分的接合,能製作半導體封裝體,但在比較例方面無法得到充分的接合,不能製作半導體封裝體。這是因為在比較例的接合溫度下接合材料(鑞材)無法充分熔融。另一方面,若上升到比較例的接合材料充分熔融的溫度為止,則其他構件熔融而形狀崩潰。
由上述的結果可知,實施例1至3的半導體封裝體得到了充分的接合。依此方式所接合的半導體封裝體具有散熱性優異這樣的優點。此外,接合層使用了包含比較便宜的氧化銀微粒子或者有機被膜銀微粒子的複合材料。由此可知,利用本發明,能便宜地提供散熱性優異的半導體封裝體。
1‧‧‧絕緣構件
2‧‧‧散熱構件
3‧‧‧接合層
Claims (10)
- 一種半導體封裝體,其係依序積層有散熱構件、接合層、絕緣構件的半導體封裝體,其特徵為:該散熱構件包含含有金剛石粒子與含鋁的金屬的鋁-金剛石系複合體,接合該散熱構件和該絕緣構件的該接合層係使用平均粒徑為1nm以上100μm以下的由脂肪族羧酸或胺化合物所被覆的有機被膜銀微粒子而形成,該有機被膜銀微粒子係平均粒徑大的銀微粒子與平均粒徑小的銀微粒子之混合物。
- 如請求項1之半導體封裝體,其中鋁-金剛石系複合體的金剛石粒子的含量係該鋁-金剛石系複合體整體的40體積%以上75體積%以下。
- 如請求項1或2之半導體封裝體,其中該絕緣構件係氧化鋁、氮化矽或者氮化鋁。
- 如請求項3之半導體封裝體,其中對該散熱構件和該接合層的接合部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
- 如請求項3之半導體封裝體,其中對該絕緣構件和該接合層的接合部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
- 如請求項1或2之半導體封裝體,其中對該散熱構件和該接合層的接合部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
- 如請求項6之半導體封裝體,其中對該絕緣構件和該 接合層的接合部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
- 如請求項1或2之半導體封裝體,其中對該絕緣構件和該接合層的接合部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
- 如請求項1或2之半導體封裝體,其中對該散熱構件的半導體元件的構裝部施加含有Ni、Ag或者Au的至少1種的鍍敷處理。
- 一種半導體封裝體的製造方法,其係製造如請求項1或2之半導體封裝體的方法,其特徵為包含:在該散熱構件和該絕緣構件的接合部設置複合材料的步驟,該複合材料係平均粒徑為1nm以上100μm以下的由脂肪族羧酸或胺化合物所被覆的有機被膜銀微粒子,且係平均粒徑大的銀微粒子與平均粒徑小的銀微粒子之混合物;和在180℃以上550℃以下的溫度下加熱,將該複合材料作成接合該散熱構件和該絕緣構件的接合層的步驟。
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US20140063757A1 (en) * | 2012-09-03 | 2014-03-06 | Kabushiki Kaisha Toshiba | Joint structure of package members, method for joining same, and package |
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US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
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JP4872663B2 (ja) * | 2006-12-28 | 2012-02-08 | 株式会社日立製作所 | 接合用材料及び接合方法 |
JP2011014556A (ja) * | 2009-06-30 | 2011-01-20 | Hitachi Ltd | 半導体装置とその製造方法 |
WO2011049067A1 (ja) * | 2009-10-22 | 2011-04-28 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、パワーモジュール用基板の製造方法及びヒートシンク付パワーモジュール用基板の製造方法 |
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