TWI686883B - 熱壓接合器、熱壓接合器的操作方法以及熱壓接合中的水平摩擦運動 - Google Patents
熱壓接合器、熱壓接合器的操作方法以及熱壓接合中的水平摩擦運動 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 35
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- 229910052802 copper Inorganic materials 0.000 description 7
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- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
本發明係提供一種熱壓接合系統的操作方法。所述的方法係包括以下步驟:透過一熱壓接合操作將一半導體元件的第一導電結構與一基板的第二導電結構接觸;以及,利用半導體元件及基板中的至少其中之一的一運動系統,將半導體元件沿著至少一大致水平的方向相對於基板移動
Description
本發明係關於半導體封裝中電性互聯的成形,更具體來說,係關於改良的熱壓接合系統以及操作該系統的方法。
在半導體封裝業界的某些態樣中,半導體元件係被接合至接合位置處。舉例來說,在習知的晶粒連接(亦被稱為晶粒接合)應用中。半導體晶粒係被接合至基板上的接合位置處(例如,引線架、堆疊晶粒應用、分隔物等)。在先進的封裝應用中,半導體元件(例如,裸晶粒、封裝的半導體晶粒等)係被接合至基板(例如,引線架、印刷電路板、載體、半導體晶圓、球格陣列(Ball Grid Array,BGA)基板等)的接合位置上。導電結構(例如,接觸線、導電凸塊、接觸墊片、焊料凸塊、導電柱、銅柱等)係提供半導體元件以及接合位置之間的電性互聯。
在許多的應用中(例如,半導體元件的熱壓接合),焊接材料係被包含在導電結構之中。在此過程中,熱量係被施加至被接合的半導體元件上(例如,透過攜載有接合工具的接頭組件中的加熱器,及/或透過支持基板的支持結構)。
半導體元件與基板的導電結構之間的錯位,在特定的熱壓接合操作中是一直都存在的難題。因此,該領域中需要一種能夠克服特定錯位問題之改良的熱壓接合系統的操作方法。
本發明係根據一示例性實施例提供了一種熱壓接合系統的操作方法。所述的操作方法係包括以下的步驟:透過一熱壓接合操作將一半導體元件的第一導電結構與一基板的第二導電結構接觸;以及,利用該半導體元件及該基板中的至少其中之一的一運動系統,將該半導體元件沿著至少一大致水平的方向相對於該基板移動。
本發明係根據另一示例性實施例提供了一種熱壓接合器。熱壓接合器係包括:一支持結構,用於支持一基板;一接合工具,用於將一半導體元件接合至該基板;以及,一運動系統,被配置為在一熱壓接合操作中提供該半導體元件與該基板之間的相對運動。
100‧‧‧熱壓接合器/接合器
102‧‧‧供應站
104‧‧‧接合檯/接合工作站
104a‧‧‧運動系統
104b‧‧‧支持結構
104c‧‧‧接合檯
106‧‧‧接頭組件
108‧‧‧運動系統
110‧‧‧上接頭
112‧‧‧下接頭
112a‧‧‧基底結構
112b‧‧‧加熱器
112c‧‧‧接合工具
200‧‧‧半導體元件
202a、202b‧‧‧上導電結構
204a、204b‧‧‧導電柱
206a、206b‧‧‧焊料接觸部分
206a1、206b1‧‧‧焊料介面
210‧‧‧基板
210a‧‧‧接合位置
212a、212b‧‧‧下導電結構
800‧‧‧運動系統
900、902‧‧‧步驟
904、906‧‧‧步驟
在參照下述附圖閱讀本說明書時,能夠最良好地理解本發明的內容。在此要強調的是,根據慣例,圖式中的各個特徵並非根據實際的比例繪製。相反地,圖式中各個特徵的大小係以清晰性為目標而任意地擴大或縮減。說明書中包含的附圖包括了下列的圖式:第1圖為根據本發明一示例性實施例之包含一接頭組件的一熱壓接合器的一部分的方塊圖;第2圖為顯示在一熱壓接合操作中導電結構之間的電性互聯的方塊圖;第3A-3C圖、第4A-4C圖以及第5A-5C圖為根據本發明一示例性實施例顯示之一熱壓接合操作中導電結構之間的電性互聯的多個系列的方塊圖;第6A-6B圖、第7A-7B圖以及第8A-8B圖為根據本發明一示例性實施例顯示之一熱壓接合操作中的熱壓接合器的多個系列的方塊圖;以及
第9圖為根據本發明一示例性實施例顯示之熱壓接合器的操作方法的流程圖。
在本說明書中,「半導體元件」一詞係指任何包括(或者在之後的步驟中會包括)半導體晶片或晶粒的結構。示例性的半導體元件係包括了一裸半導體晶粒、基板上的一半導體晶粒(例如,引線架、印刷電路板、載體、半導體晶片、半導體晶圓、球格陣列(Ball Grid Array,BGA)基板、半導體元件等)、一封裝半導體裝置、一倒裝晶片半導體裝置、嵌入在基板中的晶粒、堆疊的半導體晶粒以及其他種類的半導體元件。此外,半導體元件可以包括被配置為接合在或者包含在半導體封裝中的元件(例如,中介層、接合於堆疊晶粒結構中的分隔物、基板等)。
在本說明書中,「基板」以及「工件」等用語係指任何得以讓半導體元件接合的結構(例如,熱壓接合等方式)。舉例來說,示例性的基板係包括了引線架、印刷電路板、載體、半導體晶片、半導體晶圓、BGA基板、半導體元件等。
根據特定的示例性實施例,本發明係關於半導體晶粒的熱壓接合,並且高度適用於將半導體晶粒熱壓接合至基板接觸線(例如,有機基板上的銅接觸線,或其他的材料等)。本發明亦具有許多其他的應用,舉例來說,將一半導體晶粒接合至另一半導體晶粒上(例如,晶粒堆疊),或者將一半導體晶粒接合至一晶圓或中介層上(例如,矽、玻璃等)。
本發明中一非常特定的應用,係包括將一半導體晶粒(包括晶粒上的銅柱,以及銅柱上的焊料蓋/接觸部分)熱壓接合至具有比晶粒上的銅柱直徑的尺寸更小的導電結構(例如,凸塊、接觸線等)之基板上。在這種應用中,初始設置(半導體晶粒以及基板之間的對位)的小量偏位也可能會造成在垂直壓合的過程中產生大量的橫向力量。橫向力量會在基板的導電結構上產生不良的應力,進而在導電結構與晶粒之間的介接位置造成損害,或者對
晶粒的內層(例如介電層)造成損害,並且進一步產生其他的位置誤差。
為了減少此種初始設置中的誤差所造成的不良影響,可以在施加垂直力量時提供橫向的摩擦(例如,沿著X軸、Y軸的橫向運動)以使焊料平順。當基板上的導電結構(例如,接觸線)移動進入晶粒上對應的導電結構的焊料中時,焊料會被往側向推動以使其平順,藉此防止焊料形成為會朝向基板上的導電結構的側邊推動的結構。舉例來說,橫向運動的執行可以被控制為每一次推動小量的焊料,並且使得與摩擦運動相關聯的橫向力量較小。橫向的搖擺運動也可以協助將導電結構以較小的力量在沒有橫向運動的情況下推進焊料中。為了達到目標的Z軸形變而將所需垂直力量的降低,可以由相對於導電結構任何角度的橫向運動所影響。摩擦運動也可以用於移除氧化物、汙染物、表面處理,或者亦可以用於清除與製造連結相關聯的表面。
因此,本發明的態樣係關於利用水平運動來改善熱壓接合的品質。舉例來說,在將晶粒上(具有焊蓋)的銅柱接合至基板上的導電接觸線,且柱體的尺寸/直徑係在至少一方向上與凸塊的尺寸/直徑相似或相較之下具有較小的尺寸的情況中,此種水平運動可以協助將半導體元件上的導電結構中包含的焊料表面變得平滑。舉例來說,摩擦運動可以為線性、圓形、橢圓形等的運動。舉例來說,摩擦運動可以為單一方向上的運動、一系列循環的運動等。
請參照附圖,第1圖中顯示了示例性的熱壓接合器100。接合器100係包括具有上接頭110(舉例來說,沿著如垂直的Z軸等任何的軸線以及水平的X軸與Y軸的任何組合由運動系統108所驅動,藉此在熱壓接合過程中提供接合力)以及下接頭112的接頭組件106。下接頭112係被耦合於上接頭110。透過這種配置,上接頭110的各種運動會導致下接頭112對應的運動。舉例來說,上述的運動可以由運動系統108所提供(例如,用於沿著期望的軸線移動接頭組件106的伺服控制線性馬達)。下接頭112係
包括基底結構112a(較佳地係包含用於在加工過程的冷卻階段中接收冷卻加熱器112b的液體的冷卻通道)、加熱器112b以及接合工具112c。熟知該領域的技術人士應當理解,加熱器112b可以為用於攜載並且用於接合半導體元件(未顯示於第1圖中)的加熱接合工具,因此,可以省略分離的接合工具112c。換言之,加熱器以及接合工具等用詞可以交換使用,且可以被整合於單一的元件之中,或者可以為多個分開的元件(如第1圖中的示例性實施例所示)。加熱器112b/接合工具112c係在一接合工作站104將一半導體元件接合至基板。接合工作站104係包括運動系統104a,用於將接合工作站104的支持結構沿著一個以上的軸線移動。舉例來說,可以利用伺服控制線性馬達來提供沿著X軸、沿著Y軸、沿著X軸與Y軸等的運動。在直接選擇與放置的實施例中,加熱器112b/接合工具112c可以從供應站102選擇一半導體元件(例如,半導體晶圓或者其他提供半導體元件的結構),並且將該元件於接合工作站104接合至一基板。亦可以考慮在選擇工具與放置工具之間採用轉移(或者多次轉移)的實施例。
第2圖中顯示了在一熱壓接合過程中的導電互聯結構的一部分。雖然第2圖中顯示了單一的導電互聯結構,應當了解當在將單一的半導體元件接合至基板時可以包括有許多相同的導電互聯結構。一上導電結構202a係包括一導電柱204a以及一焊料接觸部分206a(在第2圖中已變形)。上導電結構202a係被接合至下導電結構212a(其中,下導電結構212a係位於一基板上,未顯示於圖中)。如互聯的中間線的偏移所示,上導電結構202a係與下導電結構212a偏移(兩者並未正確對位)。這種情況會造成上文中所敘述的不良影響。第3A-3C圖、第4A-4C圖以及第5A-5C圖係顯示了解決第2圖中所示之問題的範例方案。
在第3B圖中,線性運動(摩擦)係透過上導電結構202a所施加(如圖中的雙頭箭頭所示)。在第4B圖中,線性運動(摩擦)係透過下導電結構212a(如圖中的雙頭箭頭所示)所施加。在第5B圖中,線性運動(摩擦)係透過各個上導電結構202a以及下導電
結構212a所施加(如圖中的雙頭箭頭所示)。雖然箭頭僅在第3B圖、第4B圖以及第5B圖中顯示線性摩擦(在上導電結構202a與下導電結構212a接觸之後),應當理解線性摩擦可以在任何所需要的時間點開始,舉例來說,可以在接觸之前開始。此外,雖然第3B圖、第4B圖以及第5B圖中顯示了沿著單一的線性方向的線性摩擦,應當理解這些圖中顯示的僅為範例,且線性摩擦可以為多個方向、非線性方向(例如,曲線、圓形)等方向上的摩擦。第3A圖、第4A圖以及第5A圖係顯示導電互聯結構分別在第3B圖、第4B圖以及第5B圖所顯示的運動/摩擦之前的型態。第3C圖、第4C圖以及第5C圖係顯示導電互聯結構分別在第3B圖、第4B圖以及第5B圖所顯示的運動/摩擦之後的型態。
第6A圖中顯示了攜載有半導體元件200(例如,一半導體晶粒)的接合工具112c(包含於下接頭112中)。上導電結構202a、202b(例如,分別包含個別的如銅柱的導電柱204a、204b,以及對應的焊料接觸部分206a、206b)係設置於半導體元件200上。在經過對位後,接合工具112c係被降低,使得上導電結構202a、202b與下導電結構212a、212b在基板210的接合位置210a接觸(應當理解的是,一個基板可以包括有多個接合位置,用於接收多個半導體元件)。在第6A圖所顯示的範例中,基板210是由接合工作站104所支持,其中,接合工作站104係包括位於一接合檯104c上的一支持結構104b(例如,特定應用的部件)。在第6B圖中,透過熱壓接合過程,焊料接觸部分206a、206b係被重新塑形為焊料介面206a1、206b1,藉以提供上導電結構202a、202b以及各個下導電結構212a、212b之間的導電耦接。雖然第6A圖-第6B圖中僅顯示了兩對導電結構,理所當然地,其僅是為了方便說明的簡單範例。實際上,可以設置有任何數量的導電結構對(例如,十對導電結構,上百對的導電結構等)。第6B圖中在下接頭112處以及接合檯104處顯示了雙頭箭頭。這些雙頭箭頭係顯示了可以提供於下接頭112與接合檯104兩者或者兩者其中之一的摩擦運動。舉例來說,運動系統108以及104a可以被用於移動下接
頭112以及接合檯104,藉以提供所需的線性摩擦(或者非線性摩擦)。因此,應當理解所述的摩擦運動並不限制於任何特定的方向。
第7A圖-第7B圖係顯示了第6A圖-第6B圖中相同的元件,但第7A圖中在下接頭112以及接合檯104處顯示了雙頭箭頭,藉此清楚表示可以在各個下導電結構以及上導電結構接觸之前將由運動系統所提供的摩擦運動初始化。
第8A圖-第8B圖中顯示了與第7A圖-第7B圖(以及第6A圖-第6B圖)相同的元件,但第8A圖-第8B圖中的下接頭112a係包括一運動系統800,用於提供接合工具112c以及基板210之間至少一部分的相對運動。換言之,相對於利用整個接頭組件的運動系統來提供接合工具112c的水平運動,在此係於下接頭112a中設置分開的運動系統800。雖然運動系統800上沿著特定的軸線顯示了雙頭箭頭,應當理解的是,水平運動/摩擦可以沿著任何數量之所需的方向以及任何模式提供。此外,雖然第8A-8B圖中顯示了在接觸前(第8A圖)以及在接觸後(第8B圖)的雙頭箭頭,並且同時顯示於下接頭(透過運動系統800)以及接合位置(透過第1圖中顯示的運動系統104a)處,應當理解的是,根據給定的應用,可以利用所需的系統在所需的時間點提供所述的相對運動(摩擦)。
第9圖中顯示了熱壓接合系統的操作方法。熟知該領域的技術人士應當瞭解,流程圖中所包含的特定步驟可以被省略,特定的額外步驟也可以被添加至其中,且圖中所顯示的步驟順序也可以被改變。在步驟900中,一基板係被支持在熱壓接合機器的支持結構(例如,支持結構104b上的基板210)上,其中,基板係包括多個第一導電結構(例如,下導電結構212a、212b)。在步驟902中,利用熱壓接合機器的接合工具保持半導體元件(例如,由接合工具112c保持半導體元件200),其中,半導體元件係包括多個第二導電結構(例如,上導電結構202a、202b)。於步驟904中,第一導電結構以及第二導電結構係進行對位,並且透過熱壓接合操作讓該等導電結構彼此接觸。在步驟906中,半導體元
件以及基板之間的相對水平運動,是在熱壓接合操作中由半導體元件以及基板的至少其中之一的運動系統所提供。舉例來說,所述的相對運動可以利用運動系統108、104a兩者中的其中之一提供,或同時利用兩個系統同時提供。所述的相對運動可以在步驟904之前或之後開始執行。
舉例來說,半導體元件以及對應的基板之間的相對運動可以為根據一個以上的變數變化的運動檔案,例如(1)時間;(2)接合工具的Z軸高度;(3)由接合工具所施加的接合力;以及,(4)在包含接合工具的接合組件上的至少一位置所量測的溫度。舉例來說,相對運動的改變可以為振幅、頻率等條件上的改變。
在半導體元件以及對應的基板之間的所述相對運動可以為低頻率運動,且其可以具有在1-1000次/秒的範圍之間的示例性頻率。
用於提供相對運動(摩擦)的運動系統可以為任何用來驅動接合工具(例如,透過接頭組件)以及支持基板的支持結構的已知運動系統。舉例來說,此種運動系統可以包括伺服控制線性馬達。額外的示例性運動系統係包括theta旋轉馬達(提供旋轉摩擦)、步進馬達、螺旋傳動馬達、壓電致動器以及磁致伸縮致動器。
雖然本發明的內容主要係關於利用已知的運動系統(例如,用於驅動接頭組件的線性馬達)提供半導體元件以及基板之間的相對運動,但作為範例,仍然可以設置有分開的運動系統,如同上文中關於第8A圖-第8B圖的說明所述。舉例來說,可以將小型的壓電致動器設置在非常靠近加熱器/工具的位置處,藉以提供局部的相對運動。
雖然本發明的內容主要係關於提供大致水平的摩擦運動(在沿著垂直的Z軸施加熱壓接合力的應用中),應當理解的是,本發明的教示可以被應用到具有替代配置的系統之中,例如沿著非水平軸線提供摩擦運動的系統。
雖然本發明的圖式與說明係針對特定的實施例所描繪與敘述,但本發明的範疇不應受到說明與圖式中的細節所限
制。相對地,在不脫離本發明所保護的範疇以及等同的範圍的條件下,可以對本發明做出各種改良。
900、902‧‧‧步驟
904、906‧‧‧步驟
Claims (24)
- 一種熱壓接合系統的操作方法,包括以下步驟:(a)透過一熱壓接合操作將一半導體元件的第一導電結構與一基板的第二導電結構接觸;以及(b)利用該半導體元件及該基板中的至少其中之一的一運動系統,將該半導體元件沿著至少一大致水平的方向相對於該基板移動,以至少部分地校正在步驟(a)期間該第一導電結構在設置上相對於該第二導電結構的一偏位。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,所述移動該半導體元件的步驟,包括利用適用於移動攜載有該半導體元件的一接合工具之運動系統來移動該半導體元件。
- 根據申請專利範圍第2項所述之熱壓接合系統的操作方法,其中,該運動系統係包括一伺服控制線性運動系統。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,所述移動該半導體元件的步驟,包括利用適用於移動支持該基板的一支持結構之運動系統來移動該基板。
- 根據申請專利範圍第4項所述之熱壓接合系統的操作方法,其中,該運動系統係包括一伺服控制線性運動系統。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,所述移動該半導體元件的步驟,包括沿著複數個該大致水平的方向將該半導體元件相對於該基板移動。
- 根據申請專利範圍第6項所述之熱壓接合系統的操作方法,其中,沿著該等大致水平的方向中的至少其中一方向的移動,係透過適用於移動攜載有該半導體元件的一接合工具之運動系統所提供。
- 根據申請專利範圍第6項所述之熱壓接合系統的操作方法,其中,沿著該等大致水平的方向中的至少其中一方向的移動,係透過適用於移動支持該基板的一支持結構之運動系統所提供。
- 根據申請專利範圍第6項所述之熱壓接合系統的操作方法,其中,沿著該等大致水平的方向中的至少其中一方向的移動係透過適用於移動攜載有該半導體元件的一接合工具之運動系統所提供,且沿著該等大致水平的方向中的至少其中一方向的移動係透過適用於移動支持該基板的一支持結構之運動系統所提供。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,所述移動該半導體元件的步驟,係在將該半導體元件的第一導電結構與該基板的第二導電結構接觸之後開始執行。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,所述移動該半導體元件的步驟,係在將該半導體元件的第一導電結構與該基板的第二導電結構接觸之前開始執行。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,該至少一大致水平的方向係包括一線性方向。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,該至少一大致水平的方向係包括一非線性方向。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,所述將該半導體元件相對於該基板移動的步驟係包括低頻率相對運動。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,該半導體元件與該基板之間的相對運動係根據一時間函數變化。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,該半導體元件與該基板之間的相對運動,係根據將該半導體元件與該基板接合的一接合工具的Z軸高度的函數變化。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,該半導體元件與該基板之間的相對運動,係根據將該半導體元件與該基板接合的一接合工具所施加的一接合力的函數變化。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,該半導體元件與該基板之間的相對運動,係根據從一接頭組件的至少一位置所量測的一溫度的函數變化,該接頭組件係包括將該半導體元件與該基板接合的一接合工具。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,該半導體元件與該基板之間的相對運動,係根據下列函數的至少其中之一變化:(1)時間函數;(2)將該半 導體元件與該基板接合的一接合工具的Z軸高度的函數;(3)將該半導體元件與該基板接合的該接合工具所施加的一接合力的函數;以及,(4)從包含該接合工具之一接頭組件的至少一位置所量測的一溫度的函數。
- 根據申請專利範圍第1項所述之熱壓接合系統的操作方法,其中,將該半導體元件相對於該基板移動的步驟,係包括利用包含在攜載有接合工具的一下接頭組件中的運動系統來提供所述的相對運動。
- 根據申請專利範圍第20項所述之熱壓接合系統的操作方法,其中,包含在該下接頭組件中的運動系統係包括一壓電致動器。
- 一熱壓接合器,包括:一支持結構,用於支持一基板;一接合工具,用於將一半導體元件接合至該基板;以及一運動系統,被配置為在該半導體元件的複數個第一導電結構與該基板的複數個第二導電結構接觸之後,在一熱壓接合操作中提供該半導體元件與該基板之間的相對運動,由該運動系統提供的該相對運動至少部分地校正該等第一導電結構在設置上相對於該等第二導電結構的一初始偏位。
- 根據申請專利範圍的22項所述的熱壓接合器,其中,該運動系統係包含在該熱壓接合器的一下接頭中。
- 根據申請專利範圍的22項所述的熱壓接合器,其中,該運動系統係包括一壓電致動器。
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