TWI635199B - 單晶矽的製造方法 - Google Patents

單晶矽的製造方法 Download PDF

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Publication number
TWI635199B
TWI635199B TW106105220A TW106105220A TWI635199B TW I635199 B TWI635199 B TW I635199B TW 106105220 A TW106105220 A TW 106105220A TW 106105220 A TW106105220 A TW 106105220A TW I635199 B TWI635199 B TW I635199B
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TW
Taiwan
Prior art keywords
single crystal
magnetic field
oxygen concentration
wafer
diameter
Prior art date
Application number
TW106105220A
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English (en)
Chinese (zh)
Other versions
TW201800626A (zh
Inventor
齋藤康裕
最勝寺俊昭
田邉一美
Original Assignee
日商Ｓｕｍｃｏ股份有限公司
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Publication date
Application filed by 日商Ｓｕｍｃｏ股份有限公司 filed Critical 日商Ｓｕｍｃｏ股份有限公司
Publication of TW201800626A publication Critical patent/TW201800626A/zh
Application granted granted Critical
Publication of TWI635199B publication Critical patent/TWI635199B/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW106105220A 2016-06-28 2017-02-17 單晶矽的製造方法 TWI635199B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-127283 2016-06-28
JP2016127283A JP6680108B2 (ja) 2016-06-28 2016-06-28 シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
TW201800626A TW201800626A (zh) 2018-01-01
TWI635199B true TWI635199B (zh) 2018-09-11

Family

ID=60786799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106105220A TWI635199B (zh) 2016-06-28 2017-02-17 單晶矽的製造方法

Country Status (6)

Country Link
JP (1) JP6680108B2 (de)
KR (1) KR102157389B1 (de)
CN (1) CN109415843A (de)
DE (1) DE112017003224B4 (de)
TW (1) TWI635199B (de)
WO (1) WO2018003167A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI767586B (zh) * 2020-12-30 2022-06-11 大陸商上海新昇半導體科技有限公司 拉晶方法和拉晶裝置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7249913B2 (ja) * 2019-08-28 2023-03-31 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
CN115404541B (zh) * 2022-10-18 2023-08-25 四川晶科能源有限公司 一种拉晶方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09235192A (ja) * 1996-03-01 1997-09-09 Mitsubishi Materials Shilicon Corp 低酸素濃度単結晶インゴット及び単結晶引上方法

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JPH0244799B2 (ja) 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
JPH06172080A (ja) * 1992-12-02 1994-06-21 Kawasaki Steel Corp 単結晶の引上方法
JP3520883B2 (ja) 1995-12-29 2004-04-19 信越半導体株式会社 単結晶の製造方法
JP3601340B2 (ja) * 1999-02-01 2004-12-15 信越半導体株式会社 エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板
JP4484540B2 (ja) * 2004-02-19 2010-06-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶半導体の製造方法
CN1332072C (zh) * 2005-01-20 2007-08-15 上海合晶硅材料有限公司 直拉硅单晶中低氧控制方法
KR100840751B1 (ko) * 2005-07-26 2008-06-24 주식회사 실트론 고품질 실리콘 단결정 잉곳 제조 방법, 성장 장치 및그로부터 제조된 잉곳 , 웨이퍼
KR100746374B1 (ko) 2005-12-20 2007-08-03 주식회사 실트론 결정 성장 조건의 예측방법 및 이를 이용한 단결정 잉곳성장방법
JP5056603B2 (ja) * 2008-06-11 2012-10-24 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ
JP2010100474A (ja) * 2008-10-23 2010-05-06 Covalent Materials Corp シリコン単結晶引上げ水平磁場の最適化方法およびシリコン単結晶の製造方法
KR101472349B1 (ko) * 2013-05-21 2014-12-12 주식회사 엘지실트론 반도체용 실리콘 단결정 잉곳 및 웨이퍼
JP5921498B2 (ja) 2013-07-12 2016-05-24 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
CN105239154A (zh) * 2015-09-10 2016-01-13 上海超硅半导体有限公司 提拉法单晶硅生长流场控制技术
DE102015226399A1 (de) 2015-12-22 2017-06-22 Siltronic Ag Siliciumscheibe mit homogener radialer Sauerstoffvariation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09235192A (ja) * 1996-03-01 1997-09-09 Mitsubishi Materials Shilicon Corp 低酸素濃度単結晶インゴット及び単結晶引上方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI767586B (zh) * 2020-12-30 2022-06-11 大陸商上海新昇半導體科技有限公司 拉晶方法和拉晶裝置

Also Published As

Publication number Publication date
KR102157389B1 (ko) 2020-09-17
DE112017003224T5 (de) 2019-03-21
JP2018002496A (ja) 2018-01-11
TW201800626A (zh) 2018-01-01
CN109415843A (zh) 2019-03-01
KR20180124975A (ko) 2018-11-21
DE112017003224B4 (de) 2021-09-30
WO2018003167A1 (ja) 2018-01-04
JP6680108B2 (ja) 2020-04-15

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