JP4484540B2 - 単結晶半導体の製造方法 - Google Patents
単結晶半導体の製造方法 Download PDFInfo
- Publication number
- JP4484540B2 JP4484540B2 JP2004043211A JP2004043211A JP4484540B2 JP 4484540 B2 JP4484540 B2 JP 4484540B2 JP 2004043211 A JP2004043211 A JP 2004043211A JP 2004043211 A JP2004043211 A JP 2004043211A JP 4484540 B2 JP4484540 B2 JP 4484540B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- melt
- crystal semiconductor
- magnetic field
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 83
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000012535 impurity Substances 0.000 claims description 83
- 239000000155 melt Substances 0.000 claims description 74
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 239000010453 quartz Substances 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 238000011156 evaluation Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
種結晶をるつぼ内の融液に着液させ、前記種結晶を回転させながら引き上げることにより、不純物が添加された単結晶半導体を製造する単結晶半導体の製造方法において、
るつぼ底部の磁場強度をM、るつぼ内の融液の体積をVとしたとき、
単結晶半導体を引き上げる過程で、引き上げられる単結晶半導体の外周部の周速度を0.126m/sec以上に調整し、かつ
35.5≦M/V1/3≦61.3
となるように磁場を融液に印加すること
を特徴とする。
さらに、引き上げられる単結晶半導体の外周部の周速度を0.141m/sec以上に調整し、かつ
40.3≦M/V1/3≦56.4
となるように磁場を融液に印加すること
を特徴とする。
単結晶半導体に添加される不純物は、ボロンBまたはガリウムGaであり、不純物濃度は、8.0e17atoms/cc以上であること
を特徴とする。
単結晶半導体に添加される不純物は、リンPまたはアンチモンSbまたは砒素Asであり、不純物濃度は、5.0e17atoms/cc以上であること
を特徴とする。
で、35.5以上(望ましくは40.3以上)の強磁場に調整することで、成長界面(固液界面)近傍での融液5の対流が抑制されて温度変動が抑制され、不純物濃度ムラを小さくすることに貢献したものと考えられる。
5 融液
6 単結晶シリコン
9 ヒータ
14 種結晶
20 磁石
Claims (5)
- 種結晶をるつぼ内の融液に着液させ、前記種結晶を回転させながら引き上げることにより、不純物が添加された単結晶半導体を製造する単結晶半導体の製造方法において、
るつぼ底部の磁場強度をM、るつぼ内の融液の体積をVとしたとき、
単結晶半導体を引き上げる過程で、引き上げられる単結晶半導体の外周部の周速度を0.126m/sec以上に調整し、かつ
35.5≦M/V1/3≦61.3
となるように磁場を融液に印加すること
を特徴とする単結晶半導体の製造方法。 - さらに、引き上げられる単結晶半導体の外周部の周速度を0.141m/sec以上に調整し、かつ
40.3≦M/V1/3≦56.4
となるように磁場を融液に印加すること
を特徴とする請求項1に記載の単結晶半導体の製造方法。 - 単結晶半導体に添加される不純物は、ボロンBまたはガリウムGaであり、不純物濃度は、8.0e17atoms/cc以上であること
を特徴とする請求項1または2に記載の単結晶半導体の製造方法。 - 単結晶半導体に添加される不純物は、リンPまたはアンチモンSbまたは砒素Asであり、不純物濃度は、5.0e17atoms/cc以上であること
を特徴とする請求項1または2に記載の単結晶半導体の製造方法。 - 前記引き上げられる単結晶半導体の外周部の周速度と前記るつぼの底部中心での磁場の強度とを前記数値範囲内で調整することによって、固液界面直下での融液内の不純物濃度ムラを、前記引き上げられる単結晶半導体の外周部の周速度と前記るつぼの底部中心での磁場の強度とを前記数値範囲内で調整しない場合よりも小さくすること
を特徴とする請求項1または2に記載の単結晶半導体の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004043211A JP4484540B2 (ja) | 2004-02-19 | 2004-02-19 | 単結晶半導体の製造方法 |
TW093138719A TW200528591A (en) | 2004-02-19 | 2004-12-14 | Method for manufacturing single crystal semiconductor |
PCT/JP2005/002627 WO2005080646A1 (ja) | 2004-02-19 | 2005-02-18 | 単結晶半導体の製造方法 |
DE112005000350T DE112005000350T5 (de) | 2004-02-19 | 2005-02-18 | Verfahren zum Herstellen eines Einkristall-Halbleiters |
US10/588,750 US7374614B2 (en) | 2004-02-19 | 2005-02-18 | Method for manufacturing single crystal semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004043211A JP4484540B2 (ja) | 2004-02-19 | 2004-02-19 | 単結晶半導体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005231944A JP2005231944A (ja) | 2005-09-02 |
JP4484540B2 true JP4484540B2 (ja) | 2010-06-16 |
Family
ID=34879288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004043211A Expired - Lifetime JP4484540B2 (ja) | 2004-02-19 | 2004-02-19 | 単結晶半導体の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7374614B2 (ja) |
JP (1) | JP4484540B2 (ja) |
DE (1) | DE112005000350T5 (ja) |
TW (1) | TW200528591A (ja) |
WO (1) | WO2005080646A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4513407B2 (ja) * | 2004-05-06 | 2010-07-28 | 株式会社Sumco | 単結晶の製造方法 |
KR100868192B1 (ko) | 2007-06-15 | 2008-11-10 | 주식회사 실트론 | 가변 자기장을 이용한 반도체 단결정 제조 방법, 그 장치및 반도체 단결정 잉곳 |
JP5136252B2 (ja) * | 2008-07-11 | 2013-02-06 | 株式会社Sumco | シリコン単結晶の育成方法 |
JP5194132B2 (ja) * | 2008-12-26 | 2013-05-08 | 株式会社マネースクウェア・ジャパン | 取引管理装置およびプログラム |
JP5574645B2 (ja) | 2009-09-07 | 2014-08-20 | Sumco Techxiv株式会社 | 単結晶シリコンの製造方法 |
CN103422159A (zh) * | 2012-05-23 | 2013-12-04 | 浙江锦锋光伏科技有限公司 | 一种直拉单晶生产过程中的除杂方法 |
JP6680108B2 (ja) * | 2016-06-28 | 2020-04-15 | 株式会社Sumco | シリコン単結晶の製造方法 |
CN114381799A (zh) * | 2021-12-31 | 2022-04-22 | 杭州中欣晶圆半导体股份有限公司 | 消除重掺锑管道的方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62260795A (ja) * | 1986-05-08 | 1987-11-13 | Toshiba Ceramics Co Ltd | シリコンウエハの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6033291A (ja) * | 1983-07-29 | 1985-02-20 | Toshiba Ceramics Co Ltd | 単結晶シリコンの製造方法 |
JPS6033289A (ja) * | 1983-07-29 | 1985-02-20 | Toshiba Corp | シリコン単結晶の製造方法 |
JP2546736B2 (ja) * | 1990-06-21 | 1996-10-23 | 信越半導体株式会社 | シリコン単結晶引上方法 |
JP2827833B2 (ja) * | 1993-08-26 | 1998-11-25 | 日本電気株式会社 | 単結晶育成法 |
JP3443822B2 (ja) * | 1996-03-27 | 2003-09-08 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
JPH11116390A (ja) | 1997-10-08 | 1999-04-27 | Toshiba Ceramics Co Ltd | Cz法シリコン単結晶引上炉及びそのヒータ |
DE10207284A1 (de) * | 2002-02-21 | 2003-09-11 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung eines hochdotierten Einkristalls aus Silicium |
-
2004
- 2004-02-19 JP JP2004043211A patent/JP4484540B2/ja not_active Expired - Lifetime
- 2004-12-14 TW TW093138719A patent/TW200528591A/zh unknown
-
2005
- 2005-02-18 WO PCT/JP2005/002627 patent/WO2005080646A1/ja active Application Filing
- 2005-02-18 DE DE112005000350T patent/DE112005000350T5/de not_active Ceased
- 2005-02-18 US US10/588,750 patent/US7374614B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62260795A (ja) * | 1986-05-08 | 1987-11-13 | Toshiba Ceramics Co Ltd | シリコンウエハの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005231944A (ja) | 2005-09-02 |
WO2005080646A1 (ja) | 2005-09-01 |
US7374614B2 (en) | 2008-05-20 |
US20070131158A1 (en) | 2007-06-14 |
TW200528591A (en) | 2005-09-01 |
TWI301859B (ja) | 2008-10-11 |
DE112005000350T5 (de) | 2007-02-08 |
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