TWI584426B - A baking treatment system, and an organic EL film of an organic EL element - Google Patents
A baking treatment system, and an organic EL film of an organic EL element Download PDFInfo
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- TWI584426B TWI584426B TW102126466A TW102126466A TWI584426B TW I584426 B TWI584426 B TW I584426B TW 102126466 A TW102126466 A TW 102126466A TW 102126466 A TW102126466 A TW 102126466A TW I584426 B TWI584426 B TW I584426B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Description
本發明係關於在例如有機EL元件之製造過程中，可利用烘烤處理系統烘烤有機材料膜。 The present invention relates to baking of an organic material film by a baking treatment system in, for example, a manufacturing process of an organic EL element.
有機EL(Electro Luminescence)元件係利用流過電流所產生之有機化合物之發光現象的發光元件，而成為複數個有機功能膜之層積體(以下將該層積體總稱為「EL層」)夾在一組電極間的構造。在此，EL層係例如具有由陽極側，依[電洞輸送層/發光層/電子輸送層]、[電洞注入層/電洞輸送層/發光層/電子輸送層]、或[電洞注入層/電洞輸送層/發光層/電子輸送層/電子注入層]等順序進行層積的構造。 An organic EL (Electro Luminescence) element is a laminate of a plurality of organic functional films by using a light-emitting element in which an organic compound emits light due to an electric current, and is collectively referred to as an "EL layer". The construction between a set of electrodes. Here, the EL layer has, for example, an anode side, a [hole transport layer/light emitting layer/electron transport layer], a [hole injection layer/hole transport layer/light emitting layer/electron transport layer], or a [hole] The injection layer/hole transport layer/light-emitting layer/electron transport layer/electron injection layer] is sequentially laminated.
EL層之形成，係在每各個層中，藉由將有機材料蒸鍍、塗佈於基板上。形成高精度之微細圖案的情況下，利用噴墨印刷法作為塗佈方法，被認為是有利的。 The EL layer is formed by evaporating and coating the organic material on the substrate in each of the layers. In the case of forming a fine pattern with high precision, it is considered to be advantageous to use an inkjet printing method as a coating method.
由噴墨印刷法所印刷於基板上之有機材料膜係含有大量的溶媒，因此為了去除該溶媒，乾燥工程係必需的。又，為了去除殘留於有機材料膜中之高沸點溶媒且 使其變化為構成EL層之有機功能膜，因此在低氧環境中，以例如約160~250℃的溫度來進行約1小時加熱之烘烤處理係必要的。 Since the organic material film printed on the substrate by the inkjet printing method contains a large amount of a solvent, it is necessary to dry the engineering system in order to remove the solvent. Moreover, in order to remove the high boiling solvent remaining in the organic material film and Since it changes to the organic functional film which comprises an EL layer, it is necessary to carry out the baking process of heating for about 1 hour, for example, about 160-250 degreeC in a low oxygen environment.
作為用於利用噴墨印刷法形成EL層的製造裝置，為了提高生產性而提出一製造裝置，該製造裝置係經由搬送手段，連續配置電洞注入層塗佈裝置、電洞注入層乾燥裝置、1個以上的發光層塗佈裝置及1個以上的發光層乾燥裝置(例如專利文獻1：日本特開2003-142260號公報)。 As a manufacturing apparatus for forming an EL layer by an inkjet printing method, in order to improve productivity, a manufacturing apparatus is proposed which continuously arranges a hole injection layer coating apparatus, a hole injection layer drying apparatus, and a conveying apparatus via a conveying means. One or more light-emitting layer coating apparatuses and one or more light-emitting layer drying apparatuses (for example, Patent Document 1: JP-A-2003-142260).
又，在利用噴墨印刷法形成EL層中，為達成節省空間之目的，亦提出一製造裝置，該製造裝置係將基板搬送裝置配備於可塗佈用於形成EL層之所有種類之噴墨的多頭型噴墨裝置與進行乾燥．烘烤的裝置之間(例如專利文獻2：日本特開2007-265715號公報)。 Further, in forming an EL layer by an inkjet printing method, in order to achieve space saving, a manufacturing apparatus for arranging a substrate transfer apparatus for all kinds of ink jets which can be applied for forming an EL layer is also proposed. Multi-head inkjet device with drying. Between the devices to be baked (for example, Patent Document 2: JP-A-2007-265715).
在上述專利文獻1、2中所揭示之製造裝置中，於烘烤處理導入N2氣體並同時加熱基板上之有機材料膜，以使裝置內成為低氧環境。其中，在烘烤處理中，大約需要1小時的時間，因此需要大量的N2氣體，而這也是使有機EL製造程序成本增加的一個原因。特別是近年來，由於基板大型化以至其一邊的長度超過2公尺，因此會產生烘烤裝置之內部容積增加，而N2氣體之消耗量會大量增加的問題。 In the manufacturing apparatus disclosed in the above Patent Documents 1 and 2, the N 2 gas is introduced into the baking treatment and the organic material film on the substrate is simultaneously heated to make the inside of the apparatus a low oxygen atmosphere. Among them, in the baking treatment, it takes about 1 hour, so a large amount of N 2 gas is required, which is also a cause of an increase in the cost of the organic EL manufacturing process. In particular, in recent years, since the substrate has been enlarged in size so that the length of one side thereof exceeds 2 meters, there is a problem in that the internal volume of the baking device increases and the consumption of N 2 gas greatly increases.
本發明係在大型基板中，對由噴墨印刷法所印刷之有機材料膜進行烘烤處理的情況下，提供以低成本且有效率地進行處理之烘烤處理系統。 In the case of baking a film of an organic material printed by an inkjet printing method, the present invention provides a baking treatment system which is processed at low cost and efficiently.
本發明之烘烤處理系統係具備：烘烤裝置，對藉由噴墨印刷裝置，形成於基板上之有機材料膜，以大氣壓以下的壓力進行燒成；第1搬送裝置，用於將基板搬送至前述烘烤裝置；搬送室，設置為鄰接於前述烘烤裝置，可收容前述第1搬送裝置進行眞空拉製；承載裝置，設置為鄰接於前述搬送室，構成可切換大氣壓狀態與真空狀態；第2搬送裝置，配備於前述噴墨印刷裝置與前述承載裝置之間的基板搬送路徑，於該基板搬送路徑的至少一部份收授基板。 The baking treatment system of the present invention includes a baking device that burns an organic material film formed on a substrate by an inkjet printing device at a pressure of not more than atmospheric pressure, and a first conveying device for conveying the substrate To the baking device; the transfer chamber is disposed adjacent to the baking device, and is configured to receive the first transfer device to perform hollow drawing; the transfer device is disposed adjacent to the transfer chamber to configure a switchable atmospheric pressure state and a vacuum state; The second transfer device is provided in a substrate transfer path between the ink jet printing device and the carrier device, and receives a substrate on at least a portion of the substrate transfer path.
在本發明之烘烤處理系統中，前述烘烤裝置係亦可具有：加熱板，用於加熱前述基板；複數個可動銷，可對前述加熱板之表面突陷而設置，在加熱基板期間係使基板由前述加熱板的表面形成間隔的狀態下予以支持。在該情況下，前述加熱板之表面與基板的間隔係0.1mm以上10mm以下的範圍內為較佳。 In the baking treatment system of the present invention, the baking apparatus may further include: a heating plate for heating the substrate; and a plurality of movable pins, which may be provided to protrude from the surface of the heating plate, during heating of the substrate The substrate is supported in a state in which the surfaces of the heating plates are spaced apart from each other. In this case, it is preferable that the distance between the surface of the heating plate and the substrate is in the range of 0.1 mm or more and 10 mm or less.
本發明之烘烤處理系統係前述烘烤裝置連接於排氣裝置，亦可為將該烘烤裝置內調整為133Pa以上66500Pa以下之壓力而進行燒成者。該情況下，將惰性氣 體導入至前述烘烤裝置內且進行燒成為較佳。 In the baking treatment system of the present invention, the baking device is connected to the exhaust device, and the inside of the baking device may be adjusted to a pressure of 133 Pa or more and 66,500 Pa or less to be fired. In this case, the inert gas It is preferred that the body is introduced into the baking apparatus and fired.
在本發明之烘烤處理系統中，前述承載裝置係亦可具有：冷卻板，對收容於其內部之基板進行冷卻；複數個可動銷，可對前述冷卻板之表面突陷而設置，在冷卻基板期間係使基板由前述冷卻板的表面形成間隔的狀態下予以支持。在該情況下，前述冷卻板之表面與基板的間隔係0.1mm以上10mm以下的範圍內為較佳。 In the baking treatment system of the present invention, the carrying device may further include: a cooling plate for cooling the substrate housed therein; and a plurality of movable pins for setting the surface of the cooling plate to be cooled The substrate is supported while the substrate is spaced apart from the surface of the cooling plate. In this case, it is preferable that the distance between the surface of the cooling plate and the substrate is in the range of 0.1 mm or more and 10 mm or less.
本發明之烘烤處理系統係前述承載裝置連接於排氣裝置，亦可為將該承載裝置內調整為400Pa以上大氣壓以下之壓力而冷卻前述基板者。 In the baking treatment system of the present invention, the carrier device is connected to the exhaust device, and the substrate may be cooled by adjusting the pressure inside the carrier device to a pressure of 400 Pa or more.
在本發明之烘烤處理系統中，前述承載裝置係亦可作為減壓乾燥裝置的功能為較佳，該減壓乾燥裝置係對形成於收容在其內部之基板上的有機材料膜進行減壓乾燥。 In the baking treatment system of the present invention, the carrying device may preferably function as a vacuum drying device for decompressing an organic material film formed on a substrate housed therein. dry.
本發明之烘烤處理系統係亦可進一步具備使藉由噴墨印刷裝置所形成於基板上之有機材料膜進行乾燥之減壓乾燥裝置。 The baking treatment system of the present invention may further comprise a vacuum drying apparatus for drying an organic material film formed on a substrate by an inkjet printing apparatus.
在本發明之烘烤處理系統中，前述烘烤裝置係亦可為同時收容複數片基板且進行處理者。 In the baking treatment system of the present invention, the baking apparatus may be a person who simultaneously accommodates a plurality of substrates and performs processing.
在本發明之烘烤處理系統中，前述承載裝置係亦可為同時收容複數片基板者。 In the baking treatment system of the present invention, the carrier device may be a person who accommodates a plurality of substrates at the same time.
在本發明之烘烤處理系統中，前述第1搬送裝置係亦可為在前述烘烤裝置與前述承載裝置之間，同時 搬送複數片基板者。 In the baking processing system of the present invention, the first conveying device may be between the baking device and the carrier device, and Those who transport a plurality of substrates.
本發明之烘烤處理系統係亦可配備複數個鄰接前述搬送室之前述烘烤裝置。在該情況下，由3個前述烘烤裝置、前述搬送室、前述承載裝置構成1個單元，且前述第2搬送裝置係亦可為對複數個單元搬送前述基板者。 The baking treatment system of the present invention may be provided with a plurality of the above-described baking devices adjacent to the transfer chamber. In this case, the three baking apparatuses, the transfer chamber, and the carrying device may be configured as one unit, and the second transport unit may be configured to transport the substrate to a plurality of units.
根據本發明之烘烤處理系統，在有機EL元件之製造程序中，能夠抑制N2氣體之消耗量的同時，連續而高生產率地進行用於形成EL層之乾燥處理與其後的烘烤處理。因此，能夠根據本發明提高有機EL元件之製造程序的生產性。 According to the baking processing system of the present invention, in the manufacturing process of the organic EL element, the drying process for forming the EL layer and the subsequent baking process can be performed continuously and with high productivity while suppressing the consumption amount of the N 2 gas. Therefore, the productivity of the manufacturing process of the organic EL element can be improved according to the present invention.
100‧‧‧烘烤處理系統 100‧‧‧Bake processing system
200‧‧‧噴墨印刷裝置(IJ) 200‧‧‧Inkjet Printing Unit (IJ)
S‧‧‧基板 S‧‧‧Substrate
1‧‧‧真空烘烤裝置(VB) 1‧‧‧Vacuum Baking Unit (VB)
11‧‧‧搬送裝置 11‧‧‧Transporting device
10‧‧‧搬送室(TR) 10‧‧‧Transportation Room (TR)
20‧‧‧承載裝置(LL) 20‧‧‧ Carrying device (LL)
GV1‧‧‧閘閥裝置 GV1‧‧‧ gate valve device
3‧‧‧加熱板 3‧‧‧heating plate
3a‧‧‧插通孔 3a‧‧‧ inserted through hole
5‧‧‧可動銷 5‧‧‧Distributable
13a‧‧‧夾盤 13a‧‧‧ chuck
15‧‧‧支撐部 15‧‧‧Support
21‧‧‧冷卻板 21‧‧‧Cooling plate
101A‧‧‧單元 Unit 101A‧‧
37‧‧‧導引軌 37‧‧‧ Guide rail
41‧‧‧緩衝平台 41‧‧‧ buffer platform
43‧‧‧支撐壁 43‧‧‧Support wall
50‧‧‧控制部 50‧‧‧Control Department
51‧‧‧控制器 51‧‧‧ Controller
GV2‧‧‧閘閥裝置 GV2‧‧‧ gate valve device
31‧‧‧搬送裝置 31‧‧‧Transporting device
13b‧‧‧夾盤 13b‧‧‧ chuck
21a‧‧‧插通孔 21a‧‧‧ inserted through hole
23‧‧‧可動銷 23‧‧‧Distributable
52‧‧‧使用者介面部 52‧‧‧Users face
53‧‧‧記憶部 53‧‧‧Memory Department
1b‧‧‧側壁 1b‧‧‧ side wall
1a‧‧‧底壁 1a‧‧‧ bottom wall
1c‧‧‧頂壁 1c‧‧‧ top wall
GV3‧‧‧閘閥裝置 GV3‧‧‧ gate valve device
2a‧‧‧氣體導入部 2a‧‧‧Gas introduction department
2b‧‧‧排氣部 2b‧‧‧Exhaust Department
61‧‧‧惰性氣體源 61‧‧‧Inert gas source
63‧‧‧排氣裝置 63‧‧‧Exhaust device
2c‧‧‧開口部 2c‧‧‧ openings
101B‧‧‧單元 Unit 101B‧‧
21d‧‧‧氣體滯留部 21d‧‧‧Gas Retention Department
76‧‧‧背冷式氣體用之氣體源 76‧‧‧ Gas source for back-cooling gas
67‧‧‧升降構件 67‧‧‧ Lifting members
69‧‧‧升降驅動部 69‧‧‧ Lifting and Driving Department
68‧‧‧伸縮管 68‧‧‧ telescopic tube
65‧‧‧電源 65‧‧‧Power supply
71‧‧‧惰性氣體源 71‧‧‧Inert gas source
20d‧‧‧氣體導入部 20d‧‧‧Gas introduction department
20e‧‧‧排氣部 20e‧‧‧Exhaust Department
73‧‧‧排氣裝置 73‧‧‧Exhaust device
41A‧‧‧緩衝平台 41A‧‧‧ buffer platform
75‧‧‧冷媒源 75‧‧‧Refrigerant source
21c‧‧‧冷媒流路 21c‧‧‧Refrigerant flow path
20a‧‧‧底壁 20a‧‧‧ bottom wall
20b‧‧‧側壁 20b‧‧‧ side wall
20c‧‧‧頂壁 20c‧‧‧ top wall
101C‧‧‧單元 Unit 101C‧‧
2g‧‧‧開口部 2g‧‧‧ openings
21b‧‧‧氣體吐出孔 21b‧‧‧ gas discharge hole
77‧‧‧升降構件 77‧‧‧ Lifting members
79‧‧‧升降驅動部 79‧‧‧ Lifting and Driving Department
20A‧‧‧承載裝置(LL) 20A‧‧‧Bearing device (LL)
201‧‧‧搬送裝置 201‧‧‧Transporting device
33a‧‧‧夾盤 33a‧‧‧ chuck
100A‧‧‧烘烤處理系統 100A‧‧‧Bake Processing System
210‧‧‧減壓乾燥裝置(VD) 210‧‧‧Decompression Drying Unit (VD)
225‧‧‧支撐部 225‧‧‧Support
227‧‧‧導引軌 227‧‧‧ Guide rail
2f‧‧‧開口部 2f‧‧‧ openings
33b‧‧‧夾盤 33b‧‧‧ chuck
221‧‧‧搬送裝置 221‧‧‧Transporting device
41B‧‧‧緩衝平台 41B‧‧‧ buffer platform
101D‧‧‧單元 Unit 101D‧‧‧
35‧‧‧支撐部 35‧‧‧Support
[圖1]表示關於本發明之第1實施形態之烘烤處理系統之概略的平面圖。 Fig. 1 is a plan view showing the outline of a baking treatment system according to a first embodiment of the present invention.
[圖2]表示圖1之主要部的水平剖面圖。 Fig. 2 is a horizontal sectional view showing a main part of Fig. 1;
[圖3A]用於說明真空烘烤裝置的剖面圖。 Fig. 3A is a cross-sectional view for explaining a vacuum baking apparatus.
[圖3B]用於說明真空烘烤裝置之其他狀態的剖面圖。 Fig. 3B is a cross-sectional view for explaining another state of the vacuum baking apparatus.
[圖3C]用於說明真空烘烤裝置之變形例的剖面圖。 Fig. 3C is a cross-sectional view for explaining a modification of the vacuum baking apparatus.
[圖4A]用於說明承載裝置的剖面圖。 Fig. 4A is a cross-sectional view for explaining a carrier device.
[圖4B]用於說明承載裝置之其他狀態的剖面圖。 Fig. 4B is a cross-sectional view for explaining another state of the carrier device.
[圖4C]用於說明承載裝置之變形例的剖面圖。 Fig. 4C is a cross-sectional view for explaining a modification of the carrier device.
[圖5]表示有機EL元件之製造工程之概略的流程圖。 Fig. 5 is a flow chart showing an outline of a manufacturing process of an organic EL element.
[圖6]表示本發明之第2實施形態之烘烤處理系統之概略的平面圖。 Fig. 6 is a plan view showing the outline of a baking treatment system according to a second embodiment of the present invention.
以下，參閱圖面來說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
圖1係概略地表示關於第1實施形態之烘烤處理系統100的平面圖，圖2係圖1之主要部(1單元)之水平剖面圖。烘烤處理系統100係在有機EL顯示器之製造過程中，最好能夠用於藉由外部之噴墨印刷裝置(IJ)200所噴墨印刷之有機材料膜的烘烤處理。烘烤處理系統100係具備：真空烘烤裝置(VB)1，對藉由外部之噴墨印刷裝置(IJ)200形成於基板S上之有機材料膜，以大氣壓以下的壓力進行燒成；搬送裝置11(參閱圖2)，作為用於將基板S搬送至真空烘烤裝置(VB)1之第1搬送裝置；搬送室(TR)10，設置為鄰接於真空烘烤裝置1，可收容搬送裝置11而進行眞空拉製。烘烤處理系統100係更具備：承載裝置(LL)20，設置為鄰接於搬送室(TR)10，構成可切換大氣壓狀態與真空狀態；搬送裝置31，被配備於噴墨印刷裝置(IJ)200與承載裝置(LL)20之間的基板搬送路徑，作為在該基板搬送路徑之至少一部份收授基板S之第2搬送裝置。 Fig. 1 is a plan view schematically showing a baking treatment system 100 according to a first embodiment, and Fig. 2 is a horizontal sectional view showing a main part (unit 1) of Fig. 1. The baking treatment system 100 is preferably used in the manufacturing process of an organic EL display, and can be used for baking treatment of an organic material film which is ink-jet-printed by an external ink jet printing apparatus (IJ) 200. The baking treatment system 100 includes a vacuum baking apparatus (VB) 1 that burns an organic material film formed on the substrate S by an external inkjet printing apparatus (IJ) 200 at a pressure of atmospheric pressure or lower; The apparatus 11 (see FIG. 2) serves as a first conveying apparatus for conveying the substrate S to the vacuum baking apparatus (VB) 1, and the transfer chamber (TR) 10 is provided adjacent to the vacuum baking apparatus 1, and can be accommodated and transported. The device 11 performs a hollow drawing. The baking treatment system 100 further includes a carrier device (LL) 20 that is disposed adjacent to the transfer chamber (TR) 10 to configure a switchable atmospheric pressure state and a vacuum state, and a transfer device 31 that is equipped with an inkjet printing device (IJ) The substrate transfer path between the 200 and the carrier device (LL) 20 serves as a second transfer device that receives the substrate S at least a part of the substrate transfer path.
在烘烤處理系統100中，於平面視圖十字形處連結有複數個大型裝置且形成1個單元，匯集複數個該單元且構成烘烤處理系統100。圖1所示之烘烤處理系統100係包含4個單元101A，101B，101C，101D。1個單元係設為具有3個真空烘烤裝置(VB)1、1個搬送室(TR)10、1個承載裝置(LL)20之多腔室構造。在各單元之中央部配置有搬送室(TR)10，並配設有鄰接其三方的側面且對基板S進行烘烤(燒成)處理之3個真空烘烤裝置(VB)1。又，鄰接於搬送室(TR)10之剩餘一方的側面配設有承載裝置(LL)20。 In the baking treatment system 100, a plurality of large units are connected to a cross-shaped cross section, and one unit is formed, and a plurality of the units are collected to constitute a baking processing system 100. The baking processing system 100 shown in Fig. 1 includes four units 101A, 101B, 101C, 101D. One unit is a multi-chamber structure having three vacuum baking devices (VB) 1, one transfer chamber (TR) 10, and one carrier device (LL) 20. A transfer chamber (TR) 10 is disposed at a central portion of each unit, and three vacuum baking devices (VB) 1 that are adjacent to the three side surfaces and that are subjected to baking (baking) processing on the substrate S are disposed. Further, a carrier device (LL) 20 is disposed adjacent to a side surface of the remaining one of the transfer chambers (TR) 10.
3個真空烘烤裝置(VB)1、搬送室(TR)10及承載裝置(LL)20係構成為能夠將其任一內部空間維持在預定之減壓環境(真空狀態)。 The three vacuum baking devices (VB) 1, the transfer chamber (TR) 10, and the carrier device (LL) 20 are configured to maintain any of the internal spaces in a predetermined reduced pressure environment (vacuum state).
在搬送室(TR)10與各真空烘烤裝置(VB)1之間，各自配設有具有開關功能之閘閥裝置GV1。又，在搬送室(TR)10與承載裝置(LL)20之間，配設有閘閥裝置GV2。閘閥裝置GV1，GV2係在關閉狀態下氣密地密封各裝置，並可在開啟狀態下使裝置間連通且移送基板S。又，在承載裝置(LL)20與大氣環境之搬送裝置31之間，亦配備有閘閥裝置GV3，在關閉狀態下氣密地密封承載裝置(LL)20，且可在開啟狀態下，於承載裝置(LL)20內與大氣環境之搬送裝置31之間移送基板S。 A gate valve device GV1 having a switching function is disposed between the transfer chamber (TR) 10 and each of the vacuum baking devices (VB) 1. Further, a gate valve device GV2 is disposed between the transfer chamber (TR) 10 and the carrier device (LL) 20. The gate valve devices GV1, GV2 hermetically seal the devices in a closed state, and can communicate between the devices and transfer the substrate S in an open state. Further, between the carrier device (LL) 20 and the atmospheric environment transport device 31, a gate valve device GV3 is also provided, and the carrier device (LL) 20 is hermetically sealed in a closed state, and can be carried in an open state. The substrate S is transferred between the inside of the device (LL) 20 and the transfer device 31 in the atmosphere.
3個真空烘烤裝置(VB)1皆為相同構成。如圖2所示，各真空烘烤裝置(VB)1係具有用於加熱基板S之加熱板3。在加熱板3中形成有複數個插通孔3a，於該插通孔3a與基板S的背面抵接，且***支撐此之可動銷5。關於真空烘烤裝置(VB)1之詳細構造如後述。 The three vacuum baking devices (VB) 1 have the same configuration. As shown in FIG. 2, each vacuum baking apparatus (VB) 1 has a heating plate 3 for heating the substrate S. A plurality of insertion holes 3a are formed in the heating plate 3, and the insertion holes 3a abut against the back surface of the substrate S, and the movable pin 5 supporting the same is inserted. The detailed structure of the vacuum baking apparatus (VB) 1 will be described later.
在搬送室(TR)10中配備有作為第1搬送裝置之搬送裝置11。該搬送裝置11係具備例如：夾盤13a及夾盤13b，設置於上下2段；支撐部15，進出、退避及可旋轉地支撐該些夾盤13a，13b；驅動機構(省略圖示)，驅動該支撐部15。搬送裝置11係藉由支撐部15的旋轉及夾盤13a，13b的進出與退避，而可在3個真空烘烤裝置(VB)1與承載裝置(LL)20之間搬送基板S。夾盤13a，13b係構成為各自獨立且能夠搬送基板S。 The conveyance unit (TR) 10 is provided with a conveyance device 11 as a first conveyance device. The conveying device 11 includes, for example, a chuck 13a and a chuck 13b, and is provided in two stages of upper and lower sides. The support unit 15 supports the chucks 13a and 13b in a moving, retracting, and rotatably supporting manner, and a driving mechanism (not shown). The support portion 15 is driven. The conveyance device 11 can convey the substrate S between the three vacuum baking devices (VB) 1 and the carrier device (LL) 20 by the rotation of the support portion 15 and the movement and retraction of the chucks 13a and 13b. The chucks 13a and 13b are configured to be independent of each other and can transport the substrate S.
承載裝置(LL)20係如圖2所示，具有用於冷卻基板S之冷卻板21。在冷卻板21中形成有複數個插通孔21a，於該插通孔21a與基板S的背面抵接，且***支撐此之可動銷23。又，在冷卻板21的上面設置有複數個氣體吐出孔21b。關於承載裝置(LL)20之詳細構造如後述。 The carrier device (LL) 20 has a cooling plate 21 for cooling the substrate S as shown in FIG. A plurality of insertion holes 21a are formed in the cooling plate 21, and the insertion holes 21a abut against the back surface of the substrate S, and the movable pin 23 is supported. Further, a plurality of gas discharge holes 21b are provided on the upper surface of the cooling plate 21. The detailed structure of the carrier device (LL) 20 will be described later.
如圖1所示，於單元101A，101B與單元101C，101D之間，設置有用於對各承載裝置(LL)20搬送基板S之搬送裝置31。該搬送裝置31係例如具備：夾盤33a及夾盤33b，設置於上下2段；支撐部35，進出、退避及可旋轉地支撐該些夾盤33a，33b；驅動機構(省略圖示)，驅動該支撐部35；導引軌37。支撐部35係沿著導引軌37移動，可在4個單元101A，101B，101C，101D之間及緩衝平台41之間搬送基板S。 As shown in FIG. 1, between the units 101A, 101B and the units 101C, 101D, a transport device 31 for transporting the substrate S to each of the carrier devices (LL) 20 is provided. The transport device 31 includes, for example, a chuck 33a and a chuck 33b, which are provided in the upper and lower stages, and the support unit 35 supports the chucks 33a and 33b in a moving, retracting, and rotatably manner, and a drive mechanism (not shown). The support portion 35 is driven; the guide rail 37 is guided. The support portion 35 moves along the guide rail 37, and the substrate S can be transferred between the four units 101A, 101B, 101C, and 101D and between the buffer platforms 41.
圖1之烘烤處理系統100係在對搬送裝置31可收授基板S之位置上具備緩衝平台41。緩衝平台41係指在烘烤處理系統100與外部裝置例如噴墨印刷裝置200之間，收授基板S時的臨時放置處。在緩衝平台41中，架設有隔一間隔之多段保持複數個基板S的一組支撐壁43。一組支撐壁43係構成為可於該些空隙，***搬送裝置31之梳齒狀的夾盤33a，33b。 The baking processing system 100 of FIG. 1 is provided with a buffer platform 41 at a position where the substrate S can be received by the conveying device 31. The buffer platform 41 refers to a temporary placement when the substrate S is received between the baking treatment system 100 and an external device such as the inkjet printing device 200. In the buffer platform 41, a plurality of support walls 43 that hold a plurality of substrates S at intervals are provided. A set of support walls 43 are configured to be inserted into the comb-shaped chucks 33a, 33b of the conveying device 31 in the gaps.
如圖1及圖2所示，烘烤處理系統100之各構成部係連接於控制部50而進行控制之構成。控制部50係具備：控制器51，具備CPU；使用者介面部52；記憶部53。控制器51係具有電腦功能，於烘烤處理系統100總括例如 真空烘烤裝置(VB)1、承載裝置(LL)20、搬送裝置11、搬送裝置31等之各構成部進行控制。使用者介面部52係工程管理者為了管理烘烤處理系統100，因此由進行指令之輸入操作等的鍵盤或對烘烤處理系統100之運轉狀況進行可視化而顯示的顯示器等所構成。在記憶部53中，保存有控制程式(軟體)或記錄處理條件資料等之處理程式，該控制程式係用於透過控制器51的控制來實現在烘烤處理系統100所執行之各種處理。使用者介面部52及記憶部53係與控制器51連接。 As shown in FIGS. 1 and 2, each component of the baking processing system 100 is connected to the control unit 50 and controlled. The control unit 50 includes a controller 51 including a CPU, a user interface 52, and a storage unit 53. The controller 51 has a computer function, and the baking processing system 100 collectively includes, for example. Each component of the vacuum baking device (VB) 1, the carrier device (LL) 20, the conveying device 11, and the conveying device 31 is controlled. In order to manage the baking processing system 100, the user interface 52 is composed of a keyboard for inputting a command or the like, a display for visualizing the operation state of the baking processing system 100, and the like. The memory unit 53 stores a control program (software) or a processing program for recording processing condition data and the like for realizing various processes executed by the baking processing system 100 by the control of the controller 51. The user interface 52 and the memory unit 53 are connected to the controller 51.
且，因應所需，藉由來自使用者介面部52之指示等，由記憶部53呼叫任意的處理程式並於控制器51執行，藉此，在控制器51的控制下，進行烘烤處理系統100中所期望之處理。前述控制程式或處理條件資料等之處理程式係能夠利用儲存於電腦可讀取記憶媒體，例如CD-ROM、硬碟、軟碟片、快閃記憶體等之狀態者。或者，亦可由其他裝置例如經由專用回線來隨時傳送，透過線上加以傳送。 Further, if necessary, the arbitrary processing program is called by the memory unit 53 by the instruction from the user interface 52, and executed by the controller 51, whereby the baking processing system is executed under the control of the controller 51. The processing expected in 100. The processing program such as the control program or the processing condition data can utilize the state stored in a computer readable memory medium such as a CD-ROM, a hard disk, a floppy disk, a flash memory or the like. Alternatively, it may be transmitted by other devices, for example, via a dedicated return line, and transmitted through the line.
接下來，參閱圖3A、圖3B及圖3C，詳細說明真空烘烤裝置(VB)1之構成與作用。圖3A、圖3B係用於說明枚葉式之真空烘烤裝置的剖面圖。圖3A係表示使可動銷5上升且在與搬送裝置11之夾盤13a(或夾盤13b)之間收授基板S之狀態。圖3B係表示由圖3A之狀態使可動銷5 下降且藉由加熱板3加熱基板S之狀態。 Next, the configuration and action of the vacuum baking apparatus (VB) 1 will be described in detail with reference to FIGS. 3A, 3B, and 3C. 3A and 3B are cross-sectional views for explaining a lobed vacuum baking apparatus. FIG. 3A shows a state in which the movable pin 5 is raised and the substrate S is received between the chuck 13a (or the chuck 13b) of the conveying device 11. Figure 3B shows the movable pin 5 made by the state of Figure 3A. The state of the substrate S is lowered and heated by the heater board 3.
真空烘烤裝置(VB)1係由可進行眞空拉製之耐壓容器來構成，具備底壁1a、4個側壁1b及4個頂壁1c。在側壁1b中設置有導入惰性氣體之氣體導入部2a及排氣部2b。氣體導入部2a係連接惰性氣體源61，例如構成為能夠將N2、Ar等惰性氣體導入至真空烘烤裝置(VB)1內。排氣部2b係連接排氣裝置63，亦可構成為藉由驅動該排氣裝置63使真空烘烤裝置(VB)1內進行減壓排氣至數Pa的壓力為止。又，在側壁1b中設有用於將基板S搬入．搬出裝置內之開口部2c。 The vacuum baking apparatus (VB) 1 is composed of a pressure-resistant container that can be hollowed out, and has a bottom wall 1a, four side walls 1b, and four top walls 1c. A gas introduction portion 2a and an exhaust portion 2b into which an inert gas is introduced are provided in the side wall 1b. The gas introduction unit 2a is connected to the inert gas source 61, and is configured, for example, to introduce an inert gas such as N 2 or Ar into the vacuum baking apparatus (VB) 1 . The exhaust unit 2b is connected to the exhaust unit 63, and the exhaust unit 63 may be driven to decompress the inside of the vacuum baking apparatus (VB) 1 to a pressure of several Pa. Moreover, the side wall 1b is provided for carrying the substrate S into. The opening 2c in the device is carried out.
如上述，在真空烘烤裝置(VB)1的內部配備有加熱板3。加熱板3係由未圖示之支柱來進行支撐，固定於底壁1a。省略細部，加熱板3係例如為電阻熱處理之加熱器、或冷卻器之熱處理，藉由開啟(ON)電源65進行加熱至預定的溫度。 As described above, the heating plate 3 is provided inside the vacuum baking apparatus (VB) 1. The heating plate 3 is supported by a support (not shown) and fixed to the bottom wall 1a. The thin portion is omitted, and the heating plate 3 is, for example, a heat treatment of a resistance heat treatment heater or a cooler, and is heated to a predetermined temperature by turning on the power source 65.
在加熱板3中形成有複數個插通孔3a，於該插通孔3a***有支撐基板S之可動銷5。各可動銷5係固定於1個升降構件67。升降構件67係例如可藉由具備滾珠螺桿機構等之升降驅動部69來進行上下移位並支撐。在升降構件67與底壁1a之間，配備有包圍各可動銷5之例如伸縮管68，以保持插通孔3a周圍的氣密性。藉由驅動升降驅動部69並使升降構件67及複數個可動銷5上下升降移位，能夠在圖3A所示之收授位置與圖3B所示之加熱位置之間調整基板S的高度位置。此外，使基板 S升降移位之機構並不限於圖示者。 A plurality of insertion holes 3a are formed in the heating plate 3, and a movable pin 5 for supporting the substrate S is inserted into the insertion hole 3a. Each of the movable pins 5 is fixed to one lifting member 67. The elevating member 67 can be vertically displaced and supported by, for example, a lifting drive unit 69 including a ball screw mechanism or the like. Between the elevating member 67 and the bottom wall 1a, for example, a bellows 68 surrounding each of the movable pins 5 is provided to maintain airtightness around the insertion hole 3a. By driving the elevation drive unit 69 and moving the lifting member 67 and the plurality of movable pins 5 up and down, the height position of the substrate S can be adjusted between the receiving position shown in FIG. 3A and the heating position shown in FIG. 3B. In addition, the substrate is made The mechanism of the S lifting and lowering is not limited to the one shown.
已知烘烤條件或烘烤環境係會對EL層之特性產生影響。例如烘烤時，若基板S之面內產生不均勻的溫度，則在基板S之面內中有機EL元件的特性上會產生誤差。又，在烘烤時，會由基板S上之有機材料膜大量揮發出溶媒、水份等。因此，若不迅速由真空烘烤裝置(VB)1內除去該些揮發成份，則恐怕會產生烘烤後之有機功能膜被氧化等的負面影響。特別是為了提升生產效率，對複數個基板S同時進行烘烤處理的情況下，為了不受到由其他基板S所揮發之成份的影響，因此迅速地對真空烘烤裝置VB)1內進行排氣為較佳。當該些烘烤條件或烘烤環境的管理不足，作為有機EL顯示器進行使用時，會引起顯示不均勻等的故障原因。 It is known that baking conditions or baking environments have an effect on the characteristics of the EL layer. For example, when baking causes uneven temperature in the surface of the substrate S, an error occurs in the characteristics of the organic EL element in the surface of the substrate S. Further, at the time of baking, a large amount of solvent, water, and the like are volatilized from the organic material film on the substrate S. Therefore, if the volatile components are not quickly removed from the vacuum baking apparatus (VB) 1, there is a fear that the organic functional film after baking is adversely affected by oxidation or the like. In particular, in order to improve the production efficiency, when a plurality of substrates S are simultaneously baked, the vacuum baking apparatus VB)1 is quickly exhausted so as not to be affected by the components volatilized by the other substrates S. It is better. When the management of the baking conditions or the baking environment is insufficient, when it is used as an organic EL display, it causes a malfunction of display unevenness or the like.
真空烘烤裝置(VB)1係如圖3B所示，在讓基板S下降的加熱位置，開啟(ON)電源65且對基板S進行加熱板3之加熱烘烤。此時，藉由驅動排氣裝置63使真空烘烤裝置(VB)1內減壓排氣至大氣壓以下，最好是減壓至133Pa(1Torr)以上66500Pa(500Torr)以下之範圍內的壓力。如此，能夠藉由將真空烘烤裝置(VB)1內設為真空狀態且進行烘烤處理，快速地將來自有機材料膜之揮發成份排出至裝置外，且即使不使用大量的惰性氣體亦可防止印刷於基板S表面之有機材料膜的氧化。 As shown in FIG. 3B, the vacuum baking apparatus (VB) 1 turns on the power source 65 at the heating position where the substrate S is lowered, and heats the baking of the heating plate 3 on the substrate S. At this time, the vacuum exhausting device (VB) 1 is driven to evacuate to a pressure lower than atmospheric pressure by driving the exhaust device 63, and it is preferable to reduce the pressure to a pressure within a range of 133 Pa (1 Torr) or more and 66500 Pa (500 Torr) or less. In this way, the volatile component from the organic material film can be quickly discharged to the outside of the apparatus by vacuuming the vacuum baking apparatus (VB) 1 and performing baking treatment, and even if a large amount of inert gas is not used. The oxidation of the organic material film printed on the surface of the substrate S is prevented.
又，烘烤期間，基板S係不與加熱板3表面接觸，在藉由可動銷5進行支撐的狀態下，由加熱板3的 表面內形成例如0.1mm以上10mm以下的範圍的間隔為較佳。在烘烤處理中，作為加熱基板S的方式一般為熱風循環方式、加熱板方式、遠紅外線方式等。其中，由能夠有效率且均勻地加熱基板S的觀點來看，加熱板為較佳。但是，隨著基板S的大型化，因加熱所產生之基板S的彎曲亦會變大，因此，在一般加熱板的加熱中，維持基板S之面內的均勻性係困難的。在此，於本實施形態中，烘烤處理期間，不使基板S直接載置於加熱板3的表面而使形成間隔。藉此，即使對基板S進行加熱而產生彎曲，亦能夠在基板S之面內實現均勻的加熱處理。 Further, during baking, the substrate S is not in contact with the surface of the heating plate 3, and is supported by the movable pin 5, and is heated by the heating plate 3. It is preferable to form an interval in the range of, for example, 0.1 mm or more and 10 mm or less in the surface. In the baking treatment, the method of heating the substrate S is generally a hot air circulation method, a hot plate method, a far infrared ray method, or the like. Among them, a heating plate is preferable from the viewpoint of being able to efficiently and uniformly heat the substrate S. However, as the size of the substrate S increases, the curvature of the substrate S due to heating also increases. Therefore, it is difficult to maintain uniformity in the surface of the substrate S during heating of the general heating plate. Here, in the present embodiment, during the baking process, the substrate S is not placed on the surface of the heating plate 3 to form a space. Thereby, even if the substrate S is heated and bent, it is possible to achieve uniform heat treatment in the plane of the substrate S.
又，在本實施形態中，烘烤的期間，亦可由惰性氣體源61例如將N2、Ar、He等惰性氣體導入至真空烘烤裝置(VB)1內。能夠藉由導入惰性氣體，提高真空條件中基板S的加熱效率。 Further, in the present embodiment, during the baking, the inert gas source 61 may be introduced into the vacuum baking apparatus (VB) 1 by, for example, an inert gas such as N 2 , Ar or He. The heating efficiency of the substrate S in the vacuum condition can be improved by introducing an inert gas.
圖3C係表示變形例之真空烘烤裝置(VB)1A的概略剖面。圖3C所示之真空烘烤裝置(VB)1A為批次方法，能夠同時收容2片基板S且進行烘烤處理。在圖3C中，與圖3A、圖3B相同的構成係標示相同符號，省略可動銷5之升降機構或加熱板3之電源的圖示。如圖3C所示，能夠藉由多段地配置複數基板S且一同進行烘烤處理，來提高烘烤處理系統100中的生產性，亦能夠節省裝置的設置空間。此外，同時進行烘烤處理之基板S的片數係不限於2片，亦可為3片以上。 Fig. 3C is a schematic cross-sectional view showing a vacuum baking apparatus (VB) 1A according to a modification. The vacuum baking apparatus (VB) 1A shown in FIG. 3C is a batch method, and it is possible to accommodate two sheets of substrates S at the same time and perform baking treatment. In FIG. 3C, the same components as those in FIGS. 3A and 3B are denoted by the same reference numerals, and the illustration of the power supply of the elevating mechanism of the movable pin 5 or the heating plate 3 is omitted. As shown in FIG. 3C, it is possible to improve the productivity in the baking processing system 100 by arranging the plurality of substrates S in multiple stages and performing the baking process together, and it is also possible to save the installation space of the apparatus. Further, the number of the substrates S to be simultaneously baked is not limited to two, and may be three or more.
又，例如亦可上下且多段地重疊配置圖3A、 圖3B所示之枚葉式的真空烘烤裝置(VB)1來取代批次方法。 Further, for example, FIG. 3A may be overlapped and arranged in a plurality of stages. The leaf-type vacuum baking apparatus (VB) 1 shown in Fig. 3B replaces the batch method.
接下來，參閱圖4A、圖4B及圖4C，詳細說明承載裝置(LL)20的構成與作用。圖4A、圖4B係用於說明枚葉式之承載裝置的剖面圖。本實施形態之承載裝置(LL)20係除了作為真空承載裝置的功能外，亦具備冷卻處理基板S的功能，更具有對形成於基板S之有機材料膜進行減壓乾燥處理的功能。圖4A係表示使可動銷23上升且在與夾盤13a(或夾盤13b)之間收授基板S之狀態。圖4B係表示由圖4A的狀態使可動銷23下降且藉由冷卻板21冷卻基板S之狀態或使基板S上之有機材料膜進行減壓乾燥的狀態。 Next, the configuration and action of the carrier device (LL) 20 will be described in detail with reference to FIGS. 4A, 4B, and 4C. 4A and 4B are cross-sectional views for explaining a lobed type carrier device. The carrier device (LL) 20 of the present embodiment has a function of cooling the substrate S in addition to the function of the vacuum carrier device, and further has a function of performing a vacuum drying process on the organic material film formed on the substrate S. 4A shows a state in which the movable pin 23 is raised and the substrate S is received between the chuck 13a (or the chuck 13b). 4B shows a state in which the movable pin 23 is lowered by the state of FIG. 4A, the substrate S is cooled by the cooling plate 21, or the organic material film on the substrate S is dried under reduced pressure.
承載裝置(LL)20係由可進行眞空拉製之耐壓容器而構成，具備底壁20a、4個側壁20b及頂壁20c。在頂壁20c中設置有導入惰性氣體之氣體導入部20d。在側壁20b中設置有排氣部20e。此外，排氣部亦可設置於底壁20a。氣體導入部20d係連接惰性氣體源71，例如構成為能夠將N2、Ar、He等惰性氣體導入承載裝置(LL)20內。又，排氣部20e係連接排氣裝置73，能夠藉由驅動該排氣裝置73構成為將承載裝置(LL)20內減壓排氣至約數十Pa或0.1Pa的壓力。又，在彼此相對之側壁20b中，設置有開口部2f、2g，該開口部2f、2g係用於在裝 置內搬入．搬出基板S。 The carrier device (LL) 20 is composed of a pressure-resistant container that can be hollowed out, and includes a bottom wall 20a, four side walls 20b, and a top wall 20c. A gas introduction portion 20d into which an inert gas is introduced is provided in the top wall 20c. An exhaust portion 20e is provided in the side wall 20b. Further, the exhaust portion may be provided on the bottom wall 20a. The gas introduction unit 20d is connected to the inert gas source 71, and is configured, for example, so that an inert gas such as N 2 , Ar, or He can be introduced into the carrier device (LL) 20 . Further, the exhaust unit 20e is connected to the exhaust unit 73, and the exhaust unit 73 can be driven to evacuate the inside of the carrier unit (LL) 20 to a pressure of about several tens Pa or 0.1 Pa. Further, in the side walls 20b facing each other, openings 2f, 2g are provided, and the openings 2f, 2g are used for carrying in the apparatus. The substrate S is carried out.
如上述，在承載裝置(LL)20的內部配備有冷卻板21。冷卻板21係固定於底壁20a。冷卻板21係於內部具有冷媒流路21c。由冷媒源75供給任意的冷媒至該冷媒流路21c，藉由使其循環而構成為能夠冷卻冷卻板21全體。又，冷卻板21係於內部具有使背冷式用之氣體滯留之氣體滯留部21d。該氣體滯留部21d係與形成於冷卻板21之上面之複數個氣體吐出孔21b連通。又，氣體滯留部21d係與背冷式氣體用之氣體源76連接。 As described above, the cooling plate 21 is provided inside the carrier device (LL) 20. The cooling plate 21 is fixed to the bottom wall 20a. The cooling plate 21 has a refrigerant flow path 21c therein. Any refrigerant is supplied from the refrigerant source 75 to the refrigerant flow path 21c, and is circulated to be configured to cool the entire cooling plate 21. Moreover, the cooling plate 21 has a gas retention portion 21d in which the gas for back-cooling type is retained inside. The gas accumulation portion 21d communicates with a plurality of gas discharge holes 21b formed on the upper surface of the cooling plate 21. Further, the gas retention portion 21d is connected to the gas source 76 for the back-cooling gas.
又，在冷卻板21中形成有複數個插通孔21a，於該插通孔21a***支撐基板S之可動銷23。各可動銷23係固定於1個升降構件77。升降構件77係例如可藉由具備滾珠螺桿機構等之升降驅動部79來進行上下移位並支撐。在升降構件77與底壁20a之間，配備有包圍各可動銷23之例如伸縮管78，以保持插通孔21a周圍的氣密性。藉由驅動升降驅動部79，使升降構件77及複數個可動銷23上下升降移位，能夠在圖4A所示之收授位置與圖4B所示之下降位置之間調整基板S的高度位置。此外，使基板S升降移位之機構並不限於圖示者。 Further, a plurality of insertion holes 21a are formed in the cooling plate 21, and the movable pins 23 of the support substrate S are inserted into the insertion holes 21a. Each of the movable pins 23 is fixed to one lifting member 77. The elevating member 77 can be vertically displaced and supported by, for example, a lifting drive unit 79 having a ball screw mechanism or the like. Between the elevating member 77 and the bottom wall 20a, for example, a bellows 78 surrounding each of the movable pins 23 is provided to maintain airtightness around the insertion hole 21a. By driving the elevation drive unit 79, the elevation member 77 and the plurality of movable pins 23 are vertically moved up and down, and the height position of the substrate S can be adjusted between the receiving position shown in FIG. 4A and the lowered position shown in FIG. 4B. Further, the mechanism for moving the substrate S up and down is not limited to the one shown in the drawings.
在圖4B所示之下降位置中，由冷媒源75供給冷媒，對基板S進行冷卻板21之冷卻。此時，藉由驅動排氣裝置73，使承載裝置(LL)20內減壓排氣至大氣壓以下，最好是減壓至400Pa(3Torr)以上大氣壓以下之範圍內的壓力。如此，能夠藉由將承載裝置(LL)20內設為真空 狀態且進行冷卻，來防止印刷於基板S表面之有機材料膜的氧化。 In the lowered position shown in FIG. 4B, the refrigerant is supplied from the refrigerant source 75, and the substrate S is cooled by the cooling plate 21. At this time, by driving the exhaust device 73, the inside of the carrier device (LL) 20 is evacuated to a pressure lower than atmospheric pressure, preferably to a pressure within a range of 400 Pa (3 Torr) or more and atmospheric pressure or less. In this way, the inside of the carrier device (LL) 20 can be made vacuum The state is cooled to prevent oxidation of the organic material film printed on the surface of the substrate S.
又，冷卻期間，基板S係不與冷卻板21表面接觸，在藉由可動銷23進行支撐的狀態下，由冷卻板21的表面形成例如0.1mm以上10mm以下之範圍內的間隔為較佳。該狀態下，在由冷卻板21之表面所形成間隔之基板S的背面側，由複數個氣體吐出孔21b供給例如He等的背冷式氣體為最佳。如此，在本實施形態之承載裝置(LL)20中，冷卻處理期間，不讓基板S直接載置於冷卻板21的表面，可藉由供給背冷式氣體進行冷卻。因此，提高基板S之冷卻效率，而可在基板S之面內均勻且快速的進行冷卻。 In the cooling period, the substrate S is not in contact with the surface of the cooling plate 21, and in the state of being supported by the movable pin 23, it is preferable to form an interval in the range of, for example, 0.1 mm or more and 10 mm or less from the surface of the cooling plate 21. In this state, it is preferable to supply a back-cooling gas such as He to a plurality of gas discharge holes 21b on the back side of the substrate S formed by the surface of the cooling plate 21. As described above, in the carrier device (LL) 20 of the present embodiment, the substrate S is not directly placed on the surface of the cooling plate 21 during the cooling process, and can be cooled by supplying the back-cooling gas. Therefore, the cooling efficiency of the substrate S is improved, and the cooling can be performed uniformly and rapidly in the plane of the substrate S.
如上述，在本實施形態中，亦能夠將承載裝置(LL)20用於有機材料膜之乾燥處理。以承載裝置(LL)20進行乾燥處理的情況，藉由可動銷23支撐基板S的狀態下，由冷卻板21的表面形成例如0.1mm以上10mm以下的範圍內的間隔且予以保持。且，由惰性氣體源71向承載裝置(LL)20供給預定量的惰性氣體，並同時藉由驅動排氣裝置73使承載裝置(LL)20內減壓排氣至預定真空度例如減壓至0.1Pa以下的壓力。因此，在除去基板S上之有機材料膜中的溶媒之減壓乾燥處理中，能夠利用承載裝置(LL)20。 As described above, in the present embodiment, the carrier device (LL) 20 can also be used for the drying process of the organic material film. In the case where the substrate S is supported by the movable pin 23, the surface of the cooling plate 21 is formed with an interval in the range of, for example, 0.1 mm or more and 10 mm or less. Further, a predetermined amount of inert gas is supplied from the inert gas source 71 to the carrier device (LL) 20, and at the same time, the inside of the carrier device (LL) 20 is decompressed to a predetermined degree of vacuum, for example, to a reduced pressure, by driving the exhaust device 73. Pressure below 0.1Pa. Therefore, in the vacuum drying process of removing the solvent in the organic material film on the substrate S, the carrier device (LL) 20 can be utilized.
如上述，在本實施形態之烘烤處理系統100中，除了具有作為對承載裝置(LL)20進行切換大氣壓狀態 與真空狀態之預抽腔(Load-lock chamber)的功能，更能夠使其作為真空冷卻裝置、減壓乾燥裝置的功能。因此，能夠提高連續進行切換大氣壓狀態與真空狀態、冷卻處理及乾燥處理時的生產率，並同時簡化系統之裝置構成，亦可節省裝置的設置空間。 As described above, in the baking treatment system 100 of the present embodiment, in addition to switching the atmospheric pressure state as the carrier device (LL) 20 The function of the vacuum-loaded load-lock chamber can be used as a function of a vacuum cooling device and a vacuum drying device. Therefore, the productivity in continuously switching between the atmospheric pressure state, the vacuum state, the cooling process, and the drying process can be improved, and at the same time, the device configuration of the system can be simplified, and the installation space of the device can be saved.
另一方面，圖4C係表示變形例之承載裝置(LL)20A的概略剖面。圖4C所示之承載裝置(LL)20A為批次方法，能夠同時收容2片基板S且進行冷卻處理或減壓乾燥處理。在圖4C中，與圖4A、圖4B相同之構成係標示相同的符號，省略可動銷23之升降機構或冷媒源、背冷式氣體的導入機構等圖示。如圖4C所示，多段地配置且一同收容複數個基板S，切換大氣壓狀態與真空狀態，更能夠藉由進行冷卻處理或減壓乾燥處理，提高烘烤處理系統100中的生產性，亦能夠大幅節省裝置之設置空間。此外，同時進行烘烤處理之基板S的片數係不限於2片，亦可為3片以上。 On the other hand, Fig. 4C shows a schematic cross section of a carrier device (LL) 20A according to a modification. The carrier device (LL) 20A shown in FIG. 4C is a batch method capable of simultaneously accommodating two substrates S and performing a cooling process or a vacuum drying process. In FIG. 4C, the same components as those in FIGS. 4A and 4B are denoted by the same reference numerals, and the elevating mechanism of the movable pin 23, the refrigerant source, the introduction mechanism of the back-cooling gas, and the like are omitted. As shown in FIG. 4C, the plurality of substrates S are arranged in a plurality of stages, and the plurality of substrates S are accommodated together, and the atmospheric pressure state and the vacuum state are switched, and the cooling process or the reduced-pressure drying process can be performed to improve the productivity in the baking processing system 100. Significant savings in installation space. Further, the number of the substrates S to be simultaneously baked is not limited to two, and may be three or more.
又，亦可上下且多段地重疊配置例如圖4A、圖4B所示之枚葉式之承載裝置(LL)20來取代批次方法。 Further, instead of the batch method, a leaf type carrier device (LL) 20 shown in, for example, FIGS. 4A and 4B may be placed vertically and in multiple stages.
接下來，說明如上述所構成之烘烤處理系統100的動作。首先，作為第一步驟，以外部的噴墨印刷裝置(IJ)200，於基板S上以預定圖案印刷有機材料膜。印刷有有機材料膜之基板S係由附屬於外部之噴墨印刷裝置(IJ)200之搬送裝置201來進行搬出，且載置於緩衝平台41之支撐壁43上。進退驅動搬送裝置31之夾盤33a(或 夾盤33b)並接收該緩衝平台41上的基板S。接下來，在開放大氣側之閘閥GV3的狀態下，將基板S由搬送裝置31收授至承載裝置(LL)20的可動銷23。 Next, the operation of the baking processing system 100 configured as described above will be described. First, as a first step, an organic material film is printed on a substrate S in a predetermined pattern by an external inkjet printing device (IJ) 200. The substrate S on which the organic material film is printed is carried out by the transfer device 201 attached to the external inkjet printing device (IJ) 200, and placed on the support wall 43 of the buffer platform 41. The chuck 33a of the advance/retract drive conveying device 31 (or The chuck 33b) receives the substrate S on the buffer platform 41. Next, in a state where the gate valve GV3 on the atmospheric side is opened, the substrate S is carried by the transport device 31 to the movable pin 23 of the carrier device (LL) 20.
使夾盤33a(或夾盤33b)退避後，使可動銷23上的基板S下降，並同時關閉閘閥GV3。然後，對承載裝置(LL)20內進行排氣，將內部減壓至預定真空度。此時，能夠藉由對承載裝置(LL)20內進行排氣的同時調節壓力，來實施除去包含於有機材料膜中之溶媒的乾燥處理。該乾燥處理工程中，亦可將惰性氣體導入至承載裝置(LL)20。 After the chuck 33a (or the chuck 33b) is retracted, the substrate S on the movable pin 23 is lowered, and the gate valve GV3 is simultaneously closed. Then, the inside of the carrier device (LL) 20 is exhausted, and the inside is depressurized to a predetermined degree of vacuum. At this time, the drying process for removing the solvent contained in the organic material film can be performed by adjusting the pressure while exhausting the inside of the carrier device (LL) 20. In the drying process, an inert gas may be introduced into the carrier device (LL) 20.
接下來，使可動銷23上之基板S上升至收授位置為止，並同時開放搬送室(TR)10與承載裝置(LL)20之間的閘閥GV2。且，藉由搬送裝置11之夾盤13a(或夾盤13b)接收收容於承載裝置(LL)20之基板S。 Next, the substrate S on the movable pin 23 is raised to the receiving position, and the gate valve GV2 between the transfer chamber (TR) 10 and the carrier device (LL) 20 is simultaneously opened. Further, the substrate S accommodated in the carrier device (LL) 20 is received by the chuck 13a (or the chuck 13b) of the transfer device 11.
接下來，藉由搬送裝置11之夾盤13a(或夾盤13b)，在開放閘閥GV1的狀態下，將基板S搬入3個真空烘烤裝置(VB)1的任一個，收授至使上升到收授位置為止的可動銷5。接下來，關閉閘閥GV1使可動銷5下降，並調節與加熱板3表面的間隔，在真空烘烤裝置(VB)1內以預定條件對基板S執行烘烤處理。用於使有機材料膜變化為使用於有機EL之有機功能膜的烘烤溫度係例如250℃以上300℃以下的範圍內為較佳，而烘烤時間係例如約1小時為較佳。烘烤處理期間，將真空烘烤裝置(VB)1內減壓至大氣壓以下為較佳。又，將惰性氣體供給至真空烘烤裝置(VB)1內並同時進行烘烤處理為較佳。若結束烘 烤處理後，開放閘閥GV1，使可動銷5上升且將基板S由可動銷5收授至搬送裝置11之夾盤13a(或夾盤13b)，由真空烘烤裝置(VB)1進行搬出。 Then, by the chuck 13a (or the chuck 13b) of the conveying device 11, the substrate S is carried into the three vacuum baking devices (VB) 1 in a state where the gate valve GV1 is opened, and is taken up to rise. The movable pin 5 up to the receiving position. Next, the gate valve GV1 is closed to lower the movable pin 5, and the interval from the surface of the heater board 3 is adjusted, and the baking process is performed on the substrate S under predetermined conditions in the vacuum baking apparatus (VB) 1. The baking temperature for changing the organic material film to the organic functional film for organic EL is preferably in the range of, for example, 250 ° C to 300 ° C, and the baking time is preferably, for example, about 1 hour. During the baking treatment, it is preferred to reduce the pressure in the vacuum baking apparatus (VB) 1 to below atmospheric pressure. Further, it is preferable to supply an inert gas into the vacuum baking apparatus (VB) 1 while performing baking treatment. If finish drying After the baking process, the gate valve GV1 is opened, the movable pin 5 is raised, and the substrate S is guided by the movable pin 5 to the chuck 13a (or the chuck 13b) of the conveying device 11, and is carried out by the vacuum baking device (VB) 1.
且，以與前述相反之路徑，將基板S搬入承載裝置(LL)20。由於烘烤處理後的基板S為被加熱的狀態下，因此能夠在承載裝置(LL)20內進行冷卻處理。冷卻處理係使承載裝置(LL)20之可動銷23下降且調整與冷卻板21之間隔並保持預定時間。冷卻處理期間，於基板S的背面，透過由冷卻板21之氣體吐出孔21b供給背冷式氣體，提高冷卻效率，可在基板S面內進行均勻的冷卻處理。結束冷卻後，使承載裝置(LL)20內的壓力上升至大氣壓。且，開放閘閥GV3並再次使可動銷23上之基板S上升至收授位置，經由搬送裝置31，將基板S返回例如緩衝平台41。為了進行噴墨印刷裝置(IJ)200之下個有機材料膜的形成工程或外部之其他工程，因此將基板S由烘烤處理系統100搬出。 Further, the substrate S is carried into the carrier device (LL) 20 in a path opposite to the above. Since the substrate S after the baking treatment is in a heated state, the cooling process can be performed in the carrier device (LL) 20. The cooling process lowers the movable pin 23 of the carrier device (LL) 20 and adjusts the interval from the cooling plate 21 for a predetermined time. During the cooling process, the back-cooling gas is supplied through the gas discharge hole 21b of the cooling plate 21 on the back surface of the substrate S to improve the cooling efficiency, and uniform cooling treatment can be performed in the surface of the substrate S. After the cooling is completed, the pressure in the carrier (LL) 20 is raised to atmospheric pressure. Then, the gate valve GV3 is opened and the substrate S on the movable pin 23 is again raised to the receiving position, and the substrate S is returned to, for example, the buffer stage 41 via the conveying device 31. In order to perform the formation of the organic material film under the inkjet printing apparatus (IJ) 200 or other external work, the substrate S is carried out by the baking processing system 100.
在上述之工程中，可一同搬送複數個基板S且同時進行處理。例如，以搬送裝置31及搬送裝置11同時搬送複數枚例如2片基板S，並同時藉由將承載裝置(LL)20及真空烘烤裝置(VB)1設為例如如圖3C、圖4C所示之批次方法或多段地進行構成，來提高生產效率。 In the above-described project, a plurality of substrates S can be transported together and processed simultaneously. For example, the transport device 31 and the transport device 11 simultaneously transport a plurality of, for example, two substrates S, and at the same time, the carrier device (LL) 20 and the vacuum bake device (VB) 1 are set, for example, as shown in FIGS. 3C and 4C. The batch method shown or multi-stage construction is used to improve production efficiency.
有機EL元件之製造係在陽極與陰極之間，形成複數 個有機功能膜作為EL層。本實施形態之烘烤處理系統100係亦可適用於任何層積構造之有機EL元件的製造。在此，作為EL層，以製造具有[電洞注入層/電洞輸送層/發光層/電子輸送層/電子注入層]之有機EL元件的情況作為例子，來說明烘烤處理系統100中具體的處理步驟。 The organic EL element is fabricated between the anode and the cathode to form a plurality An organic functional film is used as the EL layer. The baking treatment system 100 of the present embodiment can also be applied to the production of an organic EL element having any laminated structure. Here, as an EL layer, a case where an organic EL element having a [hole injection layer/hole transport layer/light emitting layer/electron transport layer/electron injection layer] is produced as an example will be described in the baking processing system 100. Processing steps.
在圖5表示有機EL元件之製造工程的概略。在本例中，有機EL元件係藉由STEP1~STEP8的工程來製造。在STEP1中，於基板S上例如藉由蒸鍍法等以預定圖案形成陽極(畫素電極)。接下來，在STEP2中，於陽極之間形成絕緣物之隔板(間隔壁)。能夠使用例如感光性聚醯亞胺樹脂等之高分子材料作為用於形成隔板的絕緣材料。 FIG. 5 shows an outline of a manufacturing process of an organic EL element. In this example, the organic EL element is manufactured by the engineering of STEP1 to STEP8. In STEP 1, an anode (pixel electrode) is formed on the substrate S in a predetermined pattern by, for example, a vapor deposition method. Next, in STEP 2, a separator (partition wall) of the insulator is formed between the anodes. A polymer material such as a photosensitive polyimide resin can be used as the insulating material for forming the separator.
接下來，在STEP3中，於由STEP1所形成之陽極上形成電洞注入層。首先，使用噴墨印刷裝置(IJ)200，於由各隔板所區隔之陽極上印刷成為電洞注入層之材料的有機材料。接下來，對該所印刷之有機材料膜，使用烘烤處理系統100，依序進行用於除去溶媒之減壓乾燥處理及大氣中的烘烤處理，藉此形成電洞注入層。 Next, in STEP 3, a hole injection layer is formed on the anode formed by STEP1. First, an organic material which becomes a material of the hole injection layer is printed on the anode partitioned by the respective separators using an ink jet printing apparatus (IJ) 200. Next, the printed organic material film is subjected to a vacuum drying treatment for removing the solvent and a baking treatment in the atmosphere by using the baking treatment system 100, thereby forming a hole injection layer.
接下來，在STEP4中，於由STEP3所形成之電洞注入層上形成電洞輸送層。首先，使用噴墨印刷裝置(IJ)200，於電洞注入層上印刷成為電洞輸送層之材料的有機材料。對該所印刷之有機材料膜，以烘烤處理系統100，依序進行用於除去溶媒之減壓乾燥處理及真空烘烤處理，藉此形成電洞輸送層。 Next, in STEP 4, a hole transport layer is formed on the hole injection layer formed by STEP 3. First, an organic material which becomes a material of the hole transport layer is printed on the hole injection layer by using an ink jet printing apparatus (IJ) 200. The printed organic material film is subjected to a vacuum drying treatment and a vacuum baking treatment for removing the solvent in the baking treatment system 100, thereby forming a hole transport layer.
接下來，在STEP5中，於由STEP4所形成之電洞輸送層上形成發光層。首先，使用噴墨印刷裝置(IJ)200，於電洞輸送層上印刷成為發光層之材料的有機材料。對該所印刷之有機材料膜，以烘烤處理系統100，依序進行用於除去溶媒之減壓乾燥處理及真空烘烤處理，藉此形成發光層。此外，當發光層係由複數層所構成的情況下，重覆上述處理。 Next, in STEP 5, a light-emitting layer is formed on the hole transport layer formed by STEP 4. First, an organic material which becomes a material of the light-emitting layer is printed on the hole transport layer using an ink jet printing apparatus (IJ) 200. The printed organic material film is subjected to a vacuum drying treatment and a vacuum baking treatment for removing the solvent in the baking treatment system 100, thereby forming a light-emitting layer. Further, in the case where the light-emitting layer is composed of a plurality of layers, the above processing is repeated.
接下來，於發光層上，例如透過蒸鍍法，依序形成電子輸送層(STEP6)、電子注入層(STEP7)及陰極(STEP8)，藉此得到有機EL元件。 Next, an electron transporting layer (STEP 6), an electron injecting layer (STEP 7), and a cathode (STEP 8) are sequentially formed on the light-emitting layer by, for example, vapor deposition, thereby obtaining an organic EL device.
在該有機EL元件之製造程序中，烘烤處理系統100係最好能夠適用於STEP3(電洞注入層形成)、STEP4(電洞輸送層形成)及STEP5(發光層形成)。即，使用噴墨印刷裝置(IJ)200，印刷作為各層之第一步驟的有機材料膜後，在承載裝置(LL)20進行減壓乾燥處理，接下來，於真空烘烤裝置(VB)1，STEP3(電洞注入層形成)係能夠透過大氣壓，而STEP4(電洞輸送層形成)及STEP5(發光層形成)係能夠透過真空條件，各別進行烘烤處理。 In the manufacturing process of the organic EL device, the baking treatment system 100 is preferably applicable to STEP 3 (forming of a hole injection layer), STEP 4 (forming of a hole transport layer), and STEP 5 (light-emitting layer formation). That is, after the organic material film as the first step of each layer is printed by the ink jet printing apparatus (IJ) 200, the pressure-reducing drying process is performed on the carrier device (LL) 20, and then, the vacuum baking device (VB) 1 is used. STEP3 (formation of the hole injection layer) is capable of transmitting atmospheric pressure, and STEP4 (formation of the hole transport layer) and STEP5 (light-emitting layer formation) are capable of being subjected to baking treatment by vacuum conditions.
如上述，藉由使用烘烤處理系統100，能夠在有機EL元件之製造程序中，高生產率且高效率的連續進行用於形成EL層的減壓乾燥處理與烘烤處理。特別是在上述STEP4(電洞輸送層形成)、STEP5(發光層形成)中，為了避免有機材料的氧化，而必須進行低氧化環境中的烘烤處理，因此，使用烘烤處理系統100進行真空烘烤處理 為較佳。該情況下，在烘烤處理系統100中，於真空烘烤裝置(VB)1與承載裝置(LL)20，能夠維持真空環境而連續地執行真空烘烤處理與其第一步驟之減壓乾燥處理，進而提高生產效率。又，在烘烤處理系統100中，於承載裝置(LL)20，除了能夠切換真空/大氣壓之外，亦可進行減壓乾燥處理及冷卻處理，因此亦能夠節省裝置之設置空間。 As described above, by using the baking treatment system 100, it is possible to continuously perform the vacuum drying treatment and the baking treatment for forming the EL layer with high productivity and high efficiency in the manufacturing process of the organic EL element. In particular, in the above-described STEP 4 (formation of the hole transport layer) and STEP 5 (formation of the light-emitting layer), in order to avoid oxidation of the organic material, it is necessary to perform a baking treatment in a low-oxidation environment, and therefore, the vacuum is performed using the baking treatment system 100. Baking treatment It is better. In this case, in the baking treatment system 100, the vacuum baking apparatus (VB) 1 and the carrier apparatus (LL) 20 can continuously perform the vacuum baking process and the vacuum drying process of the first step thereof in the vacuum environment. , thereby increasing production efficiency. Further, in the baking treatment system 100, in addition to the vacuum/atmospheric pressure, the carrier device (LL) 20 can be subjected to a reduced-pressure drying process and a cooling process, so that the installation space of the device can be saved.
接下來，參閱圖6說明關於本發明之第2實施形態之烘烤處理系統。圖6係概略的表示關於第2實施形態之烘烤處理系統100A的平面圖。在第1實施形態之烘烤處理系統100中，構成為於承載裝置(LL)20內進行減壓乾燥處理。對此，在本實施形態之烘烤處理系統100A中，承載裝置(LL)20係另外設置進行減壓乾燥處理之專用的減壓乾燥裝置(VD)210。以下，以第1實施形態之烘烤處理系統100之不同點為中心來進行說明，於本實施形態之烘烤處理系統100A中，與第1實施形態相同之構成係標示相同符號，因此省略說明。 Next, a baking processing system according to a second embodiment of the present invention will be described with reference to Fig. 6 . Fig. 6 is a plan view schematically showing the baking treatment system 100A of the second embodiment. In the baking treatment system 100 of the first embodiment, the vacuum drying process is performed in the carrier device (LL) 20. On the other hand, in the baking treatment system 100A of the present embodiment, the carrier device (LL) 20 is additionally provided with a dedicated vacuum drying device (VD) 210 that performs a vacuum drying process. In the following, in the baking treatment system 100A of the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and therefore the description thereof is omitted. .
如圖6所示，烘烤處理系統100A係具備：真空烘烤裝置(VB)1，對藉由外部之噴墨印刷裝置(IJ)200形成於基板S上之有機材料膜，以大氣壓以下的壓力進行燒成；搬送裝置11(參閱圖2)，作為用於將基板S搬送至真空烘烤裝置(VB)1之第1搬送裝置；搬送室(TR)10，設置為鄰接於真空烘烤裝置1，可收容搬送裝置11而進行眞 空拉製；承載裝置(LL)20，設置為鄰接於搬送室(TR)10，構成可切換大氣壓狀態與真空狀態。又，烘烤處理系統100A係被配備於噴墨印刷裝置(IJ)200與承載裝置(LL)20之間的基板搬送路徑，具備：第2搬送裝置31，於該基板搬送路徑的至少一部份，收授基板S；複數個減壓乾燥裝置(VD)210，被設於噴墨印刷裝置(IJ)200與第2搬送裝置31之間。 As shown in FIG. 6, the baking treatment system 100A includes a vacuum baking apparatus (VB) 1 and an organic material film formed on the substrate S by an external inkjet printing apparatus (IJ) 200 at atmospheric pressure or lower. The pressure is fired; the conveying device 11 (see FIG. 2) serves as a first conveying device for conveying the substrate S to the vacuum baking device (VB) 1, and the transfer chamber (TR) 10 is disposed adjacent to the vacuum baking. The device 1 can accommodate the transport device 11 and perform 眞 The air pulling device; the carrier device (LL) 20 is disposed adjacent to the transfer chamber (TR) 10 to constitute a switchable atmospheric pressure state and a vacuum state. In addition, the baking processing system 100A is provided in a substrate transfer path between the inkjet printing device (IJ) 200 and the carrier device (LL) 20, and includes a second transfer device 31 on at least one of the substrate transfer paths. The substrate S is received, and a plurality of vacuum drying devices (VD) 210 are provided between the inkjet printing device (IJ) 200 and the second conveying device 31.
減壓乾燥裝置(VD)210為已知之構成，因此省略詳細說明，例如具備：可眞空拉製之處理容器；平台，在該處理容器內載置基板S；排氣裝置，對該處理容器內進行排氣；開口部，將基板S搬入．搬出該處理容器內；閘閥，對該開口部進行開關。在本實施形態中，2個減壓乾燥裝置(VD)210為1組，設置有合計4個減壓乾燥裝置(VD)210。 Since the vacuum drying apparatus (VD) 210 has a known configuration, detailed description thereof is omitted, and for example, a processing container that can be hollowed out is provided, a platform in which the substrate S is placed, and an exhaust device in the processing container. Exhaust; the opening, the substrate S is carried. The inside of the processing container is carried out; and the gate valve is opened and closed. In the present embodiment, two vacuum drying apparatuses (VD) 210 are one set, and a total of four vacuum drying apparatuses (VD) 210 are provided.
如圖6所示，在減壓乾燥裝置(VD)210之間，對各減壓乾燥裝置(VD)210設置有用於搬送基板S之第3搬送裝置221。該搬送裝置221係例如具備：夾盤223a及夾盤223b，設為上下2段；支撐部225，進出、退避及可旋轉地支撐該些夾盤223a，223b；驅動機構(省略圖示)，驅動該支撐部225；導引軌227。支撐部225係沿著導引軌 227移動，可在4個減壓乾燥裝置(VD)210之間及與緩衝平台41A、41B之間搬送基板S。 As shown in FIG. 6, between the vacuum drying apparatuses (VD) 210, each of the vacuum drying apparatuses (VD) 210 is provided with a third conveying apparatus 221 for conveying the substrates S. The conveying device 221 includes, for example, a chuck 223a and a chuck 223b, which are provided in two stages, and a support portion 225 that supports, retracts, and rotatably supports the chucks 223a and 223b, and a drive mechanism (not shown). The support portion 225 is driven; the guide rail 227 is driven. The support portion 225 is along the guide rail The 227 moves to transport the substrate S between the four vacuum drying devices (VD) 210 and between the buffer platforms 41A and 41B.
圖6之烘烤處理系統100A係對搬送裝置221，於可收授基板S之位置上具備2個緩衝平台41A、41B。一個緩衝平台41A係在烘烤處理系統100與外部之裝置例如噴墨印刷裝置200之間，收授基板S時的臨時放置處。另一個緩衝平台41B係在烘烤處理系統100內的搬送裝置221與搬送裝置31之間，收授基板S時的臨時放置處。緩衝平台41A、41B的構成係與第1實施形態相同。 The baking processing system 100A of Fig. 6 is provided with two buffer platforms 41A and 41B at the position where the substrate S can be transported. A buffer platform 41A is a temporary placement when the substrate S is received between the baking processing system 100 and an external device such as the inkjet printing device 200. The other buffer platform 41B is a temporary placement place between the conveying device 221 and the conveying device 31 in the baking processing system 100 when the substrate S is received. The configurations of the buffer platforms 41A and 41B are the same as those of the first embodiment.
接下來，說明如上述所構成之烘烤處理系統100A的動作。首先，作為第一步驟，以外部的噴墨印刷裝置(IJ)200，於基板S上以預定圖案印刷有機材料膜。印刷有有機材料膜之基板S係由附屬於外部之噴墨印刷裝置(IJ)200之搬送裝置201進行搬出，並載置於緩衝平台41A的支撐壁43上。進退驅動搬送裝置221之夾盤223a(或夾盤223b)且接收該緩衝平台41A上的基板S。接下來，在開放閘閥的狀態下，將基板S由搬送裝置221收授至減壓乾燥裝置(VD)210的平台(省略圖示)。 Next, the operation of the baking processing system 100A configured as described above will be described. First, as a first step, an organic material film is printed on a substrate S in a predetermined pattern by an external inkjet printing device (IJ) 200. The substrate S on which the organic material film is printed is carried out by the transfer device 201 attached to the external inkjet printing device (IJ) 200, and placed on the support wall 43 of the buffer table 41A. The chuck 223a (or the chuck 223b) of the transport device 221 is advanced and retracted and receives the substrate S on the buffer stage 41A. Next, in a state where the gate valve is opened, the substrate S is taken up by the transfer device 221 to a stage (not shown) of the reduced-pressure drying device (VD) 210.
接下來，關閉減壓乾燥裝置(VD)210的閘閥，對減壓乾燥裝置(VD)210內進行排氣且將內部減壓至預定真空度，藉此能夠實施除去包含於有機材料膜中之溶媒的乾燥處理。此外，該乾燥處理工程中，亦可將惰性氣體導 入減壓乾燥裝置(VD)210。 Next, the gate valve of the vacuum drying apparatus (VD) 210 is closed, the inside of the vacuum drying apparatus (VD) 210 is exhausted, and the inside is decompressed to a predetermined degree of vacuum, whereby the removal of the film contained in the organic material film can be performed. Drying of the solvent. In addition, the inert gas guide can also be used in the drying process. Into a reduced pressure drying device (VD) 210.
結束乾燥處理後，開放減壓乾燥裝置(VD)210的閘閥，藉由搬送裝置221將基板S移載至緩衝平台41B的支撐壁43上。進退驅動搬送裝置31之夾盤33a(或夾盤33b)且接收該緩衝平台41B上的基板S。接下來，在開放大氣側之閘閥GV3的狀態下，將基板S由搬送裝置31收授至承載裝置(LL)20的可動銷23。 After the drying process is completed, the gate valve of the vacuum drying apparatus (VD) 210 is opened, and the substrate S is transferred to the support wall 43 of the buffer stage 41B by the conveying device 221. The chuck 33a (or the chuck 33b) of the transport device 31 is advanced and retracted and receives the substrate S on the buffer stage 41B. Next, in a state where the gate valve GV3 on the atmospheric side is opened, the substrate S is carried by the transport device 31 to the movable pin 23 of the carrier device (LL) 20.
使夾盤33a(或夾盤33b)退避後，使可動銷23上的基板S下降，並同時關閉閘閥GV3。然後，對承載裝置(LL)20內進行排氣，將內部減壓至預定真空度。 After the chuck 33a (or the chuck 33b) is retracted, the substrate S on the movable pin 23 is lowered, and the gate valve GV3 is simultaneously closed. Then, the inside of the carrier device (LL) 20 is exhausted, and the inside is depressurized to a predetermined degree of vacuum.
接下來，使可動銷23上之基板S上升至收授位置為止，並同時開放搬送室(TR)10與承載裝置(LL)20之間的閘閥GV2。且，藉由搬送裝置11之夾盤13a(或夾盤13b)接收收容於承載裝置(LL)20之基板S。 Next, the substrate S on the movable pin 23 is raised to the receiving position, and the gate valve GV2 between the transfer chamber (TR) 10 and the carrier device (LL) 20 is simultaneously opened. Further, the substrate S accommodated in the carrier device (LL) 20 is received by the chuck 13a (or the chuck 13b) of the transfer device 11.
接下來，藉由搬送裝置11之夾盤13a(或夾盤13b)，在開放閘閥GV1的狀態下，將基板S搬入3個真空烘烤裝置(VB)1的任一個，收授至使上升到收授位置為止的可動銷5。接下來，關閉閘閥GV1使可動銷5下降且調節與加熱板3表面之間隔，在真空烘烤裝置(VB)1內以預定條件對基板S執行烘烤處理。用於使有機材料膜變化為使用於有機EL之有機功能膜的烘烤溫度係例如250℃以上300℃以下的範圍內為較佳，而烘烤時間係例如約1小時為較佳。烘烤處理期間，將真空烘烤裝置(VB)1內減壓至大氣壓以下為較佳。又，將惰性氣體供給至真空烘烤 裝置(VB)1內並同時進行烘烤處理為較佳。若結束烘烤處理後，開放閘閥GV1，使可動銷5上升且將基板S由可動銷5收授至搬送裝置11之夾盤13a(或夾盤13b)，由真空烘烤裝置(VB)1進行搬出。 Then, by the chuck 13a (or the chuck 13b) of the conveying device 11, the substrate S is carried into the three vacuum baking devices (VB) 1 in a state where the gate valve GV1 is opened, and is taken up to rise. The movable pin 5 up to the receiving position. Next, the gate valve GV1 is closed to lower the movable pin 5 and adjust to the interval from the surface of the heater board 3, and the substrate S is subjected to baking treatment under predetermined conditions in the vacuum baking apparatus (VB) 1. The baking temperature for changing the organic material film to the organic functional film for organic EL is preferably in the range of, for example, 250 ° C to 300 ° C, and the baking time is preferably, for example, about 1 hour. During the baking treatment, it is preferred to reduce the pressure in the vacuum baking apparatus (VB) 1 to below atmospheric pressure. Also, the inert gas is supplied to the vacuum baking It is preferred to carry out the baking treatment in the apparatus (VB) 1 at the same time. When the baking process is completed, the gate valve GV1 is opened, the movable pin 5 is raised, and the substrate S is guided by the movable pin 5 to the chuck 13a (or the chuck 13b) of the conveying device 11, and the vacuum baking device (VB) 1 is used. Move out.
且，以與前述相反之路徑，基板S被搬入承載裝置(LL)20。由於烘烤處理後的基板S為被加熱過的狀態下，因此能夠在承載裝置(LL)20內進行冷卻處理。冷卻處理係使承載裝置(LL)20之可動銷23下降且調整與冷卻板21之間隔並保持預定時間。冷卻處理期間，於基板S的背面，透過由冷卻板21之氣體吐出孔21b供給背冷式氣體，提高冷卻效率，可在基板S面內進行均勻的冷卻處理。結束冷卻處理後，使承載裝置(LL)20的壓力上升至大氣壓。且，開放閘閥GV3並同時使可動銷23上之基板S再次上升至收授位置，經由搬送裝置31，將基板S返回例如緩衝平台41B。且，使用搬送裝置221，將基板S移載至緩衝平台41A。為了進行噴墨印刷裝置(IJ)200之下個有機材料膜的形成工程或外部之其他工程，因此將基板S由烘烤處理系統100A搬出。 Further, the substrate S is carried into the carrier device (LL) 20 in a path opposite to the foregoing. Since the substrate S after the baking treatment is in a heated state, the cooling process can be performed in the carrier device (LL) 20. The cooling process lowers the movable pin 23 of the carrier device (LL) 20 and adjusts the interval from the cooling plate 21 for a predetermined time. During the cooling process, the back-cooling gas is supplied through the gas discharge hole 21b of the cooling plate 21 on the back surface of the substrate S to improve the cooling efficiency, and uniform cooling treatment can be performed in the surface of the substrate S. After the cooling treatment is finished, the pressure of the carrier device (LL) 20 is raised to atmospheric pressure. Then, the gate valve GV3 is opened and the substrate S on the movable pin 23 is again raised to the receiving position, and the substrate S is returned to, for example, the buffer stage 41B via the conveying device 31. Further, the substrate S is transferred to the buffer stage 41A by the transfer device 221. In order to perform the formation of the organic material film under the inkjet printing apparatus (IJ) 200 or other external work, the substrate S is carried out by the baking treatment system 100A.
在上述之工程中，可一同搬送複數個基板S且同時進行處理。例如，以搬送裝置221、搬送裝置31及搬送裝置11同時搬送複數枚例如2片基板S，並同時藉由將減壓乾燥裝置(VD)210、承載裝置(LL)20及真空烘烤裝置(VB)1設為例如如圖3C、圖4C所示之批次方法或多段地進行構成，來提高生產效率。 In the above-described project, a plurality of substrates S can be transported together and processed simultaneously. For example, the conveying device 221, the conveying device 31, and the conveying device 11 simultaneously convey a plurality of, for example, two substrates S, and at the same time, a vacuum drying device (VD) 210, a carrier device (LL) 20, and a vacuum baking device ( VB) 1 is configured, for example, in a batch method as shown in FIGS. 3C and 4C or in a plurality of stages to improve production efficiency.
本實施形態中之其他構成及效果係與第1實施形態相同。 Other configurations and effects in the present embodiment are the same as those in the first embodiment.
以上，透過舉例詳細說明本發明之實施形態，本發明並不限於上述實施形態，亦可進行各種變形。例如，有機EL元件之製造工程係不限於圖5所舉例者，例如EL層即使為具有由陽極側依照[電洞輸送層/發光層/電子輸送層]、[電洞注入層/電洞輸送層/発光層/電子輸送層]等順序層積之構造的情況下，相同地亦能夠適用本發明之烘烤處理系統100、100A。 The embodiments of the present invention have been described in detail above by way of examples, and the present invention is not limited to the embodiments described above, and various modifications may be made. For example, the manufacturing process of the organic EL element is not limited to the one illustrated in FIG. 5, for example, the EL layer has the anode side according to [hole transport layer/light emitting layer/electron transport layer], [hole injection layer/hole transport). In the case of a structure in which layers, such as a layer, a light-emitting layer, and an electron transport layer, are sequentially laminated, the baking treatment systems 100 and 100A of the present invention can be applied similarly.
又，如圖1、圖6所示之烘烤處理系統100、100A之構成或佈線始終只是例子，真空烘烤裝置(VB)1、減壓乾燥裝置(VD)210等之配置或個數等係可進行適當變更。 Further, the configuration or wiring of the baking treatment systems 100 and 100A shown in Figs. 1 and 6 are always examples, and the arrangement or number of the vacuum baking device (VB) 1, the vacuum drying device (VD) 210, and the like are The system can be changed as appropriate.
本國際申請係根據2012年7月25日所申請之日本專利申請號2012-164541來主張優先權，該申請之所有內容皆引用於此。 Priority is claimed on Japanese Patent Application No. 2012-164541, filed on Jan.
1‧‧‧真空烘烤裝置(VB) 1‧‧‧Vacuum Baking Unit (VB)
10‧‧‧搬送室(TR) 10‧‧‧Transportation Room (TR)
20‧‧‧承載裝置(LL) 20‧‧‧ Carrying device (LL)
200‧‧‧噴墨印刷裝置(IJ) 200‧‧‧Inkjet Printing Unit (IJ)
31‧‧‧搬送裝置 31‧‧‧Transporting device
33a‧‧‧夾盤 33a‧‧‧ chuck
33b‧‧‧夾盤 33b‧‧‧ chuck
35‧‧‧支撐部 35‧‧‧Support
37‧‧‧導引軌 37‧‧‧ Guide rail
41‧‧‧緩衝平台 41‧‧‧ buffer platform
43‧‧‧支撐壁 43‧‧‧Support wall
50‧‧‧控制部 50‧‧‧Control Department
100‧‧‧烘烤處理系統 100‧‧‧Bake processing system
101A‧‧‧單元 Unit 101A‧‧
101B‧‧‧單元 Unit 101B‧‧
101C‧‧‧單元 Unit 101C‧‧
101D‧‧‧單元 Unit 101D‧‧‧
201‧‧‧搬送裝置 201‧‧‧Transporting device
Claims (20)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2012164541A JP6181358B2 (en) | 2012-07-25 | 2012-07-25 | Baking process system and method for producing laminate of organic functional film of organic EL element |
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| Publication Number | Publication Date |
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| TW201419467A TW201419467A (en) | 2014-05-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW102126466A TWI584426B (en) | 2012-07-25 | 2013-07-24 | A baking treatment system, and an organic EL film of an organic EL element |
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| Country | Link |
|---|---|
| JP (1) | JP6181358B2 (en) |
| KR (1) | KR101663005B1 (en) |
| CN (2) | CN106206378B (en) |
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| WO (1) | WO2014017194A1 (en) |
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| JP2004327272A (en) * | 2003-04-25 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | Manufacturing device and light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104488358A (en) | 2015-04-01 |
| TW201419467A (en) | 2014-05-16 |
| JP2014026764A (en) | 2014-02-06 |
| CN106206378A (en) | 2016-12-07 |
| JP6181358B2 (en) | 2017-08-16 |
| CN106206378B (en) | 2020-12-01 |
| WO2014017194A1 (en) | 2014-01-30 |
| KR20150038252A (en) | 2015-04-08 |
| KR101663005B1 (en) | 2016-10-06 |
| CN104488358B (en) | 2016-08-17 |
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