TWI578365B - A method of manufacturing a plasma processing chamber and an electrostatic chuck thereof - Google Patents
A method of manufacturing a plasma processing chamber and an electrostatic chuck thereof Download PDFInfo
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- TWI578365B TWI578365B TW103145165A TW103145165A TWI578365B TW I578365 B TWI578365 B TW I578365B TW 103145165 A TW103145165 A TW 103145165A TW 103145165 A TW103145165 A TW 103145165A TW I578365 B TWI578365 B TW I578365B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
Description
本發明涉及半導體製造領域，尤其涉及一種等離子體處理腔室及其靜電夾盤的製造方法。 The present invention relates to the field of semiconductor manufacturing, and in particular, to a plasma processing chamber and a method of manufacturing the same.
等離子處理裝置利用真空反應室的工作原理進行半導體基片和等離子平板的加工。真空反應室的工作原理是在真空反應室中通入含有適當蝕刻源的反應氣體，然後再對該真空反應室進行射頻能量輸入，以啟動反應氣體，來激發和維持等離子體，以便分別蝕刻基片表面上的材料層或在基片表面上沉積材料層，進而對半導體基片和等離子平板進行加工。 The plasma processing apparatus processes the semiconductor substrate and the plasma plate using the working principle of the vacuum reaction chamber. The working principle of the vacuum reaction chamber is to pass a reaction gas containing a suitable etching source into the vacuum reaction chamber, and then input RF energy into the vacuum reaction chamber to start the reaction gas to excite and maintain the plasma to respectively etch the base. The material layer on the surface of the sheet or a layer of material is deposited on the surface of the substrate to process the semiconductor substrate and the plasma plate.
等離子體處理腔室中包括一基台，基台上方放置著待處理的基片。基台上方設置有一個靜電夾盤，靜電夾盤用於夾持基片。靜電夾盤上層的絕緣層中內嵌了一個直流電極，直流電極連接有一直流電源。當基片製程開始之前，直流電源施加於直流電極，使得直流電極產生一吸附力，將基片夾持於基台之上。而當製程結束以後，關閉施加於直流電極上的直流電源，從而解除基片和靜電夾盤之間的吸附力，機械手臂從腔室外部伸入腔室內，並將基片順利移除出腔室。 The plasma processing chamber includes a submount on which the substrate to be processed is placed. An electrostatic chuck is disposed above the abutment, and the electrostatic chuck is used to hold the substrate. A DC electrode is embedded in the insulating layer of the upper layer of the electrostatic chuck, and a DC power source is connected to the DC electrode. Before the start of the substrate process, a DC power source is applied to the DC electrode, so that the DC electrode generates an adsorption force to clamp the substrate on the base. When the process is finished, the DC power applied to the DC electrode is turned off, thereby releasing the adsorption force between the substrate and the electrostatic chuck, the robot arm extends into the chamber from outside the chamber, and the substrate is smoothly removed from the chamber. .
直流電極一般是內嵌於靜電夾盤的絕緣層裡，並且直流電極一般非常薄。而直流電極和直流電源之間必須有金屬連接，在靜電夾盤內 部一般是設置金屬線作為連接線。但是厚度很薄的直流電極很容易在設置金屬線的過程中產生破裂。本發明正是基於此提出的。 The DC electrode is typically embedded in the insulating layer of the electrostatic chuck and the DC electrode is typically very thin. There must be a metal connection between the DC electrode and the DC power supply, in the electrostatic chuck The part is usually a metal wire as a connecting wire. However, a very thin DC electrode is prone to cracking during the setting of the wire. The present invention has been made based on this.
針對背景技術中的上述問題，本發明提出了一種等離子體處理腔室及其靜電夾盤的製造方法。 In view of the above problems in the background art, the present invention proposes a plasma processing chamber and a method of manufacturing the same.
本發明第一方面提供了一種等離子體處理腔室的靜電夾盤的製造方法，其中，所述製造方法包括如下步驟：提供一陶瓷基底；在所述陶瓷基底上打若干通孔，所述通孔用於容納金屬連接線；提供若干金屬連接線，將若干金屬連接線分別鑲嵌入所述陶瓷基底的所述若干通孔之中；在真空環境中利用擴散焊加熱鑲嵌了金屬連接線的陶瓷基底，使得所述金屬連接線和通孔焊接在一起；將直流電極置於所述陶瓷基底之上；在放置了直流電極的陶瓷基底之上塗覆抗腐蝕層。 A first aspect of the present invention provides a method of manufacturing an electrostatic chuck of a plasma processing chamber, wherein the manufacturing method includes the steps of: providing a ceramic substrate; and performing a plurality of through holes on the ceramic substrate The hole is for accommodating the metal connecting wire; the plurality of metal connecting wires are respectively inserted into the plurality of through holes of the ceramic substrate; and the ceramic embedded with the metal connecting wire is heated by diffusion welding in a vacuum environment a substrate such that the metal connecting wires and the via holes are soldered together; a DC electrode is placed on the ceramic substrate; and an anti-corrosion layer is coated on the ceramic substrate on which the DC electrode is placed.
進一步地，所述製造方法還包括如下步驟：在真空環境中利用擴散焊加熱鑲嵌了金屬連接線的陶瓷基底至0.5到0.7倍金屬連接線的熔點值，再持續加熱5到10分鐘使得所述金屬連接線和通孔焊接在一起。 Further, the manufacturing method further includes the steps of: heating the ceramic substrate in which the metal connecting wire is embedded to a melting point value of 0.5 to 0.7 times the metal connecting wire by diffusion welding in a vacuum environment, and further heating for 5 to 10 minutes so that the The metal connecting wires and the through holes are welded together.
進一步地，中所述通孔的直徑和金屬連接線的直徑相同。 Further, the diameter of the through hole is the same as the diameter of the metal connecting wire.
進一步地，所述金屬連接線的熱膨脹率遠大於陶瓷基底和直流電極。 Further, the metal connecting wire has a thermal expansion rate much larger than that of the ceramic substrate and the direct current electrode.
進一步地，所述金屬連接線的材料包括：銅、銀、鋁、金。 Further, the material of the metal connecting wire comprises: copper, silver, aluminum, gold.
進一步地，所述陶瓷基底的材料包括氧化鋁。 Further, the material of the ceramic substrate comprises alumina.
進一步地，所述直流電極的材料包括鎢。 Further, the material of the DC electrode comprises tungsten.
進一步地，所述製造方法還包括如下步驟：利用真空沉積或者印刷的方法將直流電極置於所述陶瓷基底之上。 Further, the manufacturing method further includes the step of placing a DC electrode on the ceramic substrate by vacuum deposition or printing.
進一步地，所述抗腐蝕層的材料包括氧化釔或氮化釔。 Further, the material of the anti-corrosion layer comprises hafnium oxide or tantalum nitride.
進一步地，所述抗腐蝕層是由物理氣相沉積或等離子體噴塗所形成。 Further, the anti-corrosion layer is formed by physical vapor deposition or plasma spraying.
進一步地，所述製造方法還包括如下步驟：在金屬連接線下方連接軟金屬連接線。 Further, the manufacturing method further includes the step of connecting the soft metal connecting line under the metal connecting line.
本發明第二方面提供了一種等離子體處理腔室的的製造方法，其中，所述製造方法包括本發明第一方面所述的靜電夾盤的製造方法。 A second aspect of the invention provides a method of manufacturing a plasma processing chamber, wherein the manufacturing method comprises the method of manufacturing the electrostatic chuck according to the first aspect of the invention.
本發明提供的等離子體處理腔室及其靜電夾盤的製造方法，能夠順利地在直流電極以下的靜電夾盤區域設置金屬連接線，不會對直流電極造成破壞，以便於後續在靜電夾盤的頂層塗覆抗腐蝕層。 The plasma processing chamber and the method for manufacturing the same according to the present invention can smoothly set a metal connecting line in an electrostatic chuck region below the direct current electrode without causing damage to the direct current electrode, so as to facilitate subsequent electrostatic chucks. The top layer is coated with an anti-corrosion layer.
100‧‧‧等離子體處理腔室 100‧‧‧plasma processing chamber
101‧‧‧靜電夾盤 101‧‧‧Electrical chuck
1012‧‧‧陶瓷基底 1012‧‧‧Ceramic substrate
1016‧‧‧金屬連接線 1016‧‧‧Metal cable
1017‧‧‧軟金屬連接線 1017‧‧‧Soft metal cable
1017a‧‧‧接頭 1017a‧‧‧ connector
1018‧‧‧抗腐蝕層 1018‧‧‧Anti-corrosion layer
1019‧‧‧抗腐蝕層 1019‧‧‧Anti-corrosion layer
102‧‧‧側壁 102‧‧‧ side wall
103‧‧‧氣體源 103‧‧‧ gas source
104‧‧‧射頻電源 104‧‧‧RF power supply
105‧‧‧真空泵 105‧‧‧vacuum pump
106‧‧‧基台 106‧‧‧Abutment
107‧‧‧等離子體約束環 107‧‧‧plasma confinement ring
108‧‧‧電阻 108‧‧‧resistance
109‧‧‧氣體噴淋頭 109‧‧‧ gas sprinkler
110‧‧‧直流電極 110‧‧‧DC electrode
111‧‧‧直流電源 111‧‧‧DC power supply
W‧‧‧基片 W‧‧‧ substrates
P‧‧‧處理區域 P‧‧‧Processing area
圖1是等離子體處理腔室及升舉裝置的結構示意圖。 1 is a schematic view showing the structure of a plasma processing chamber and a lifting device.
圖2(a)~2(d)是根據本發明一個具體實施例的等離子體處理腔室的靜電夾盤的製造流程圖。 2(a)-2(d) are flow diagrams showing the fabrication of an electrostatic chuck of a plasma processing chamber in accordance with an embodiment of the present invention.
圖3是根據本發明的一個具體實施例的等離子體處理腔室的基台的結構示意圖。 3 is a schematic block diagram of a submount of a plasma processing chamber in accordance with an embodiment of the present invention.
以下結合附圖，對本發明的具體實施方式進行說明。要指出的是，“半導體工藝件”、“晶圓”和“基片”這些詞在隨後的說明中將被經常互換使用，在本發明中，它們都指在處理反應室內被加工的工藝件，工藝件不限於晶圓、襯底、基片、大面積平板基板等。為了方便說明，本文在實施方式說明和圖示中將主要以“基片”為例來作示例性說明。 Specific embodiments of the present invention will be described below with reference to the accompanying drawings. It is to be noted that the terms "semiconductor process", "wafer" and "substrate" will be used interchangeably in the following description. In the present invention, they all refer to process parts that are processed in the processing chamber. The process member is not limited to a wafer, a substrate, a substrate, a large-area flat substrate, or the like. For convenience of description, the "substrate" will be mainly exemplified in the description and illustration of the embodiments herein.
圖1示出了等離子體處理腔室及升舉裝置的結構示意圖。等離子體處理腔室100具有一個處理腔體(未示出)，處理腔體基本上為柱形，且處理腔體側壁102基本上垂直，處理腔體內具有相互平行設置的上電極和下電極。通常，在上電極與下電極之間的區域為處理區域P，該處理區域P將形成高頻能量以點燃和維持等離子體。在基台106上方放置待要加工的基片W，該基片W可以是待要蝕刻或加工的半導體基片或者待要加工成平板顯示器的玻璃平板。其中，所述基台106用於夾持基片W。反應氣體從氣體源103中被輸入至處理腔體內的氣體噴淋頭109，一個或多個射頻電源104可以被單獨地施加在下電極上或同時被分別地施加在上電極與下電極上，用以將射頻功率輸送到下電極上或上電極與下電極上，從而在處理腔體內部產生大的電場。大多數電場線被包含在上電極和下電極之間的處理區域P內，此電場對少量存在於處理腔體內部的電子進行加速，使之與輸入的反應氣體的氣體分子碰撞。這些碰撞導致反應氣體的離子化和等離子體的激發，從而在處理腔體內產生等離子體。反應氣體的中性氣體分子在經受這些強電場時失去了電子，留下帶正電的離子。帶正電的離子向著下電極方向加速，與被處理的基片中的中性物質結合，激發基片加工，即蝕刻、沉積等。在等離子體處理腔室100的合適的某個位置處設置有排氣區域，排氣區域與 外置的排氣裝置(例如真空泵105)相連接，用以在處理過程中將用過的反應氣體及副產品氣體抽出腔室。其中，等離子體約束環107用於將等離子體約束於處理區域P內。腔室側壁102上連接有接地端，其中設置有一電阻108。 Figure 1 shows a schematic view of the structure of a plasma processing chamber and a lifting device. The plasma processing chamber 100 has a processing chamber (not shown), the processing chamber is substantially cylindrical, and the processing chamber sidewall 102 is substantially vertical, and the processing chamber has upper and lower electrodes disposed in parallel with each other. Typically, the area between the upper and lower electrodes is the processing area P which will form high frequency energy to ignite and sustain the plasma. A substrate W to be processed is placed over the substrate 106, which may be a semiconductor substrate to be etched or processed or a glass plate to be processed into a flat panel display. The base 106 is used to clamp the substrate W. The reaction gas is input from the gas source 103 to the gas shower head 109 in the processing chamber, and the one or more radio frequency power sources 104 may be separately applied to the lower electrode or simultaneously applied to the upper and lower electrodes, respectively. The RF power is delivered to the lower electrode or to the upper and lower electrodes to create a large electric field inside the processing chamber. Most of the electric field lines are contained in the processing region P between the upper electrode and the lower electrode, and this electric field accelerates a small amount of electrons existing inside the processing chamber to collide with gas molecules of the input reaction gas. These collisions result in ionization of the reactive gas and excitation of the plasma, thereby generating a plasma within the processing chamber. The neutral gas molecules of the reactive gas lose electrons when subjected to these strong electric fields, leaving positively charged ions. The positively charged ions accelerate toward the lower electrode and combine with the neutral species in the substrate being processed to excite substrate processing, i.e., etching, deposition, and the like. An exhaust region is provided at a suitable position of the plasma processing chamber 100, and the exhaust region is An external exhaust device, such as vacuum pump 105, is coupled to draw used reactive gas and by-product gases out of the chamber during processing. Among them, the plasma confinement ring 107 is used to confine the plasma in the processing region P. A grounding end is connected to the side wall 102 of the chamber, and a resistor 108 is disposed therein.
眾所周知，靜電夾盤101(ESC，electrostatic chuck)是等離子體處理腔室中的核心組件。由於靜電夾盤101是作為下電極和基片的承載物，其必然是硬性和結構穩定的，以防止在產品製程過程中等離子體轟擊和基片磨損。然而，現有技術的靜電夾盤101大多形成於黏合固體陶瓷圓盤於陽極化的鋁基底上。靜電夾盤101的陶瓷圓盤通常由Al2O3或AlN製成，並且包含一些金屬和基於矽的混合物，例如TiO2、SiO2等。當靜電夾盤在包含鹵族元素(例如F、Cl等)等離子體的環境下運作時，靜電夾盤101的陶瓷基底(Al2O3或AlN)和包含的其他成分都將受到等離子體的轟擊，然而其中包含的其他成分將在相對更高的腐蝕速率下被侵蝕。因此，等離子體腐蝕會改變靜電夾盤表面的形態、成分和陶瓷基底的特性(表面粗糙度、電阻係數等)，並且進一步導致靜電夾盤101的功能的改變，例如漏電流，氦氣洩露速率、去夾持時間等。 As is well known, an electrostatic chuck (ESC) is a core component in a plasma processing chamber. Since the electrostatic chuck 101 is a carrier for the lower electrode and the substrate, it is necessarily rigid and structurally stable to prevent plasma bombardment and substrate wear during the manufacturing process of the product. However, the prior art electrostatic chuck 101 is mostly formed on a bonded solid ceramic disc on an anodized aluminum substrate. The ceramic disc of the electrostatic chuck 101 is typically made of Al 2 O 3 or AlN and contains some metal and cerium-based mixtures such as TiO 2 , SiO 2 and the like. When the electrostatic chuck operates in an environment containing a halogen element (eg, F, Cl, etc.) plasma, the ceramic substrate (Al 2 O 3 or AlN) of the electrostatic chuck 101 and other components contained therein will be subjected to plasma. Bombardment, however, other components contained therein will be eroded at relatively higher corrosion rates. Therefore, plasma etching changes the morphology, composition, and characteristics of the ceramic substrate (surface roughness, resistivity, etc.) of the surface of the electrostatic chuck, and further causes changes in the function of the electrostatic chuck 101, such as leakage current, helium leak rate. , to clamp time, and so on.
為了穩定靜電夾盤101的成分、結構和特性，現有技術通常在靜電夾盤101表面塗覆或者封裝抗等離子體腐蝕的材料，以防止靜電夾盤101被等離子體腐蝕。然而，在靜電夾盤101上用等離子體噴塗(plasma spray，PS)的方式塗覆抗腐蝕層並不可取，這是因為等離子體噴塗例如氧化釔的抗腐蝕層具有氣孔並且結構上易碎，並且氧化釔的抗腐蝕層比矽晶片軟，這樣會導致製程中產生顆粒污染。現有技術中也會在靜電夾盤101的陶瓷圓盤上利用物理氣相沉積(plasma enhanced physical vapour deposition， PEPVD)沉積緻密堅硬的等離子體抗腐蝕層，例如氧化釔或者氧化釔/氧化鋁混合。然而，直接在靜電夾盤101表面上沉積在技術上有限制，因為沉積溫度通常很容易達到100℃及以上，這是由於在物理氣相沉積製程中等離子體或塗覆沉積源會加熱靜電夾盤101。但是，由於陶瓷基底和鋁基底之間的黏合物熔點較低，靜電夾盤101的溫度是不能高於100℃及以上的。 In order to stabilize the composition, structure and characteristics of the electrostatic chuck 101, the prior art generally coats or encapsulates a plasma corrosion resistant material on the surface of the electrostatic chuck 101 to prevent the electrostatic chuck 101 from being corroded by plasma. However, it is not preferable to apply a corrosion-resistant layer on the electrostatic chuck 101 by plasma spraying (PS) because the anti-corrosion layer of plasma spraying such as cerium oxide has pores and is structurally brittle. Moreover, the anti-corrosion layer of antimony oxide is softer than the antimony wafer, which causes particle contamination in the process. In the prior art, plasma enhanced physical vapour deposition is also used on the ceramic disk of the electrostatic chuck 101. PEPVD) deposits a dense, hard plasma anti-corrosion layer, such as yttria or yttria/alumina mixed. However, deposition directly on the surface of the electrostatic chuck 101 is technically limited because the deposition temperature is usually easily reached to 100 ° C and above because the plasma or coated deposition source heats the electrostatic chuck during the physical vapor deposition process. Disk 101. However, since the melting point of the adhesive between the ceramic substrate and the aluminum substrate is low, the temperature of the electrostatic chuck 101 cannot be higher than 100 ° C or higher.
現有技術公開的改進靜電夾盤性能的方法包括(1)首先在靜電夾盤101的陶瓷基底上進一步塗覆改善性抗腐蝕層，以及(2)然後通過黏合塗覆了抗腐蝕層陶瓷基底和鋁基底形成靜電夾盤101。現有技術通過在靜電夾盤101上塗覆抗腐蝕層使得其具有很多特定特性，例如高硬度、良好熱導率、耐用的結構以抗多種等離子體化學成分的腐蝕。實際上，按照現有技術的靜電夾盤101生產流程，在直流電極之下的氧化鋁基底之中形成電氣連接點(electrical joint)還有很多技術問題。具體地，上文已經提及靜電夾盤101中的直流電極還連接有一直流電源，因此工藝上需要在靜電夾盤101的氧化鋁基底臨界於直流電極的正下方用金屬做為連接線。而直流電極的厚度較薄，僅僅只有10~20um的金屬鎢，而上方的抗腐蝕層的質地又較為柔軟，因此在直流電極形成以後再做金屬連接線，金屬連接線會有極大可能損壞直流電極。 Methods of improving the performance of an electrostatic chuck disclosed in the prior art include (1) first applying an improved corrosion resistant layer on a ceramic substrate of the electrostatic chuck 101, and (2) then coating the corrosion resistant layer ceramic substrate by bonding and The aluminum substrate forms an electrostatic chuck 101. The prior art has many specific properties by coating an anti-corrosion layer on the electrostatic chuck 101, such as high hardness, good thermal conductivity, and durable structure to resist corrosion of various plasma chemistries. In fact, according to the prior art electrostatic chuck 101 production process, there are many technical problems in forming an electrical joint in the alumina substrate below the DC electrode. Specifically, it has been mentioned above that the DC electrode in the electrostatic chuck 101 is also connected to a DC power source, and therefore the process requires that the alumina substrate of the electrostatic chuck 101 be used as a connecting line directly below the DC electrode. The thickness of the DC electrode is relatively thin, only 10~20um of metal tungsten, and the texture of the upper anti-corrosion layer is softer. Therefore, after the DC electrode is formed, the metal connection line is formed, and the metal connection line may greatly damage the DC. electrode.
本發明提供了一種等離子體處理腔室及其靜電夾盤的製造方法。如圖1所示，靜電夾盤101位於基台106的上方，其用於在其上夾持基片W，在靜電夾盤101上方的材料層中設置有一直流電極110，直流電極110須直接連接一直流電源111，以使得在施加了直流電源111的作用下直流電極110產生一個將基片W夾持於其上的夾持力。因此，在直流電極110和直流電 源111之間必須存在用於電連接的連接線，而在靜電夾盤101中也必然需要設置金屬連線。本發明的發明目的就在於在直流電極110及其與直流電源111連接的連接線之間的靜電夾盤101相關材料層領域形成電氣連接(electrode joint)。 The present invention provides a plasma processing chamber and a method of manufacturing the same. As shown in FIG. 1, the electrostatic chuck 101 is located above the base 106 for holding the substrate W thereon. A DC electrode 110 is disposed in the material layer above the electrostatic chuck 101, and the DC electrode 110 is directly The DC power source 111 is connected so that the DC electrode 110 generates a clamping force for holding the substrate W thereon by the application of the DC power source 111. Therefore, at the DC electrode 110 and DC There must be a connection line for electrical connection between the sources 111, and it is also necessary to provide a metal connection in the electrostatic chuck 101. The object of the present invention is to form an electrical joint in the field of the material layer of the electrostatic chuck 101 between the DC electrode 110 and its connection line connected to the DC power source 111.
本發明第一方面提供了一種等離子體處理腔室的靜電夾盤的製造方法。圖2是根據本發明一個具體實施例的等離子體處理腔室的靜電夾盤的製造流程圖。根據本發明的一個優選具體實施例，其利用了熱脹冷縮原理(cooling and expansion)在直流電極110及其與直流電源111連接的連接線之間的靜電夾盤101相關材料層領域形成電氣連接(electrode joint)。在本實施例中，所述靜電夾盤101的製造方法包括如下步驟：如圖2(a)所示，首先提供一陶瓷基底1012。然後，在所述陶瓷基底1012上打若干通孔1014，所述通孔1014用於容納金屬連接線。為簡明起見，在圖2(a)僅示出了一個通孔1014。接著，如圖2(b)所示，提供若干金屬連接線1016，將若干金屬連接線1016分別鑲嵌入所述陶瓷基底1012的所述若干通孔1014之中。然後，在真空環境中利用擴散焊(Thermal diffusion bonding)加熱上述鑲嵌了金屬連接線1016的陶瓷基底1012。此時，由於金屬連接線1016都是由熱膨脹率很高的金屬製成，在加熱的作用下金屬開始具有一定延伸度，也就是其金屬原子“擴散起來”，最終金屬連接線1016將會膨脹以填滿通孔1014，從而使得金屬連接線1016和通孔1014焊接在一起。接著，如圖2(c)所示，將直流電極110置於所述陶瓷基底之上。由於直流電極110在金屬連接線1016形成以後才進行製造，因此不存在現有技術中直流電極110由於較薄而被後形成的金屬連接線1016破壞的缺陷，這充分說明了本發明的優越性。其中，直 流電極110的厚度大約為0.2mm或更小。最後，如圖2(d)所示，在放置了直流電極110的陶瓷基底1012之上沉積抗腐蝕層1018，靜電夾盤101製造完成。此時，在靜電夾盤101的直流電極110之下的陶瓷基底區域1012之中順利地形成了電氣連接。 A first aspect of the invention provides a method of making an electrostatic chuck of a plasma processing chamber. 2 is a flow diagram of the fabrication of an electrostatic chuck of a plasma processing chamber in accordance with an embodiment of the present invention. According to a preferred embodiment of the present invention, it utilizes the cooling and expansion principle to form an electrical field in the field of the material layer of the electrostatic chuck 101 between the DC electrode 110 and its connection line to the DC power source 111. Electrode joint. In the present embodiment, the method of manufacturing the electrostatic chuck 101 includes the following steps: First, as shown in FIG. 2(a), a ceramic substrate 1012 is first provided. Then, a plurality of through holes 1014 are formed in the ceramic substrate 1012 for accommodating the metal connecting wires. For the sake of simplicity, only one through hole 1014 is shown in Figure 2(a). Next, as shown in FIG. 2(b), a plurality of metal connecting wires 1016 are provided, and a plurality of metal connecting wires 1016 are respectively embedded in the plurality of through holes 1014 of the ceramic substrate 1012. Then, the ceramic substrate 1012 in which the metal connecting wires 1016 are embedded is heated by a diffusion bonding in a vacuum environment. At this time, since the metal connecting wires 1016 are all made of a metal having a high thermal expansion rate, the metal starts to have a certain degree of elongation under the action of heating, that is, the metal atoms "diffuse", and finally the metal connecting wire 1016 will expand. The through holes 1014 are filled so that the metal connecting wires 1016 and the through holes 1014 are welded together. Next, as shown in FIG. 2(c), a DC electrode 110 is placed on the ceramic substrate. Since the DC electrode 110 is manufactured after the metal connection line 1016 is formed, there is no defect that the DC electrode 110 is broken by the later formed metal connection line 1016 due to the thinness, which fully demonstrates the superiority of the present invention. Among them, straight The thickness of the flow electrode 110 is approximately 0.2 mm or less. Finally, as shown in FIG. 2(d), an anti-corrosion layer 1018 is deposited over the ceramic substrate 1012 on which the DC electrode 110 is placed, and the electrostatic chuck 101 is completed. At this time, an electrical connection is smoothly formed in the ceramic base region 1012 under the DC electrode 110 of the electrostatic chuck 101.
特別地，所述製造方法還包括如下步驟：在真空環境中利用擴散焊加熱鑲嵌了金屬連接線1016的陶瓷基底1012至0.5到0.7倍金屬連接線1016的熔點值，此時金屬連接線1016開始具有延展性，質地開始變軟，金屬連接線1016的原子開始“擴散”，再持續加熱5到10分鐘使得所述金屬連接線1016和通孔1014焊接在一起。其中，擴散焊的執行壓力是在0.5-1 ATM。 In particular, the manufacturing method further includes the step of heating the ceramic substrate 1012 of the metal connecting wire 1016 to a melting point value of the metal connecting wire 1016 by using diffusion welding in a vacuum environment, at which time the metal connecting wire 1016 starts. With ductility, the texture begins to soften, the atoms of the metal bond 1016 begin to "diffuse" and then continue to heat for 5 to 10 minutes to weld the metal bond wires 1016 and vias 1014 together. Among them, the execution pressure of diffusion welding is 0.5-1 ATM.
特別地，所述通孔1014的直徑與金屬連接線1016的直徑相同，以使得金屬連接線1016在冷卻狀態下能夠順利鑲嵌入通孔1014之中。由於金屬連接線1016的熔點高於陶瓷基底1012的熔點，因此在特定溫度的擴散焊作用下金屬連接線1016的金屬原子開始延伸和“擴散”，質地變軟，從而最終使得兩者焊接在一起。 In particular, the diameter of the through hole 1014 is the same as the diameter of the metal connecting wire 1016, so that the metal connecting wire 1016 can be smoothly embedded in the through hole 1014 in a cooled state. Since the melting point of the metal connecting wire 1016 is higher than the melting point of the ceramic substrate 1012, the metal atoms of the metal connecting wire 1016 start to spread and "diffuse" under the diffusion welding of a specific temperature, and the texture becomes soft, thereby finally welding the two together. .
特別地，所述金屬連接線1016的熱膨脹率遠大於陶瓷基底1012和直流電極110。下表使出了陶瓷基底1012、直流電極110和金屬連接線1016的金屬材料的熱膨脹率。 In particular, the metal connection line 1016 has a thermal expansion rate much larger than that of the ceramic substrate 1012 and the direct current electrode 110. The table below gives the thermal expansion rates of the metal materials of the ceramic substrate 1012, the direct current electrode 110, and the metal connecting wires 1016.
進一步地，所述金屬連接線1016的材料包括：銅、銀、鋁、 金，所述陶瓷基底1012的材料包括氧化鋁，所述直流電極110的材料包括鎢。如上表所示，作為金屬連接線1016的金屬材料鋁、銅、銀、金、黃銅的熱膨脹係數遠大於作為陶瓷基底1012的材料氧化鋁和氮化鋁以及作為直流電極110的金屬鎢。因此，在同樣的室溫條件下，金屬連接線1016膨脹得更厲害，因此，在同樣的加熱條件下，金屬連接線1016膨脹/延伸/融化得更厲害，因此金屬連接線1016也就順利嵌入了靜電夾盤101的陶瓷基底1012之中，這是由於本發明利用了靜電夾盤101的陶瓷基底2012和金屬連接線1016的熱膨脹率之差。 Further, the material of the metal connecting wire 1016 includes: copper, silver, aluminum, Gold, the material of the ceramic substrate 1012 includes aluminum oxide, and the material of the direct current electrode 110 includes tungsten. As shown in the above table, the metal material of the metal connecting wire 1016, aluminum, copper, silver, gold, brass, has a thermal expansion coefficient much larger than that of the material as the ceramic substrate 1012, aluminum oxide and aluminum nitride, and metal tungsten as the direct current electrode 110. Therefore, under the same room temperature condition, the metal connecting wire 1016 expands even more, and therefore, under the same heating condition, the metal connecting wire 1016 expands/extends/melts more, and thus the metal connecting wire 1016 is smoothly embedded. Among the ceramic substrates 1012 of the electrostatic chuck 101, this is because the present invention utilizes the difference in thermal expansion rates between the ceramic substrate 2012 of the electrostatic chuck 101 and the metal connecting wires 1016.
需要說明的是，在上述實施例中，金屬連接線1016的直徑是精心選擇和計算的，以使得金屬連接線1016和靜電夾盤101的陶瓷基底1012在熱擴散壓合執行中產生的應力不會破壞陶瓷基底1012。 It should be noted that, in the above embodiment, the diameter of the metal connecting wire 1016 is carefully selected and calculated so that the stress generated by the metal connecting wire 1016 and the ceramic substrate 1012 of the electrostatic chuck 101 during heat diffusion bonding is not performed. The ceramic substrate 1012 is destroyed.
進一步地，所述製造方法還包括如下步驟：利用真空沉積或者印刷(printing)的方法將直流電極110置於所述陶瓷基底1012之上。 Further, the manufacturing method further includes the step of placing the DC electrode 110 on the ceramic substrate 1012 by vacuum deposition or printing.
進一步地，所述抗腐蝕層1018的材料包括氧化釔或氮化釔。具體地，靜電夾盤101表層的抗腐蝕層1018是由物理氣相沉積或者等離子體噴塗來塗覆的，其具有緻密和高孔隙率的結構，並具有等離子體抗腐蝕性。 Further, the material of the anti-corrosion layer 1018 includes hafnium oxide or tantalum nitride. Specifically, the corrosion-resistant layer 1018 of the surface layer of the electrostatic chuck 101 is coated by physical vapor deposition or plasma spraying, has a dense and high porosity structure, and has plasma corrosion resistance.
本發明第二方面提供了一種等離子體處理腔室的的製造方法，其中，所述製造方法包括本發明第一方面所述的靜電夾盤的製造方法。 A second aspect of the invention provides a method of manufacturing a plasma processing chamber, wherein the manufacturing method comprises the method of manufacturing the electrostatic chuck according to the first aspect of the invention.
圖3是根據本發明的一個具體實施例的等離子體處理腔室的基台的結構示意圖。進一步地，本發明提供的等離子體處理腔室的靜電夾盤的製造方法還包括如下步驟：在金屬連接線1016以下連接軟金屬連接線1017，從而完成直流電極110和直流電源的全部連接線。其中，在軟金屬連 接線1017下端，也就是在軟金屬連接線1017於基台106下面製造一接頭1017a，延伸以連接入圖1所示的直流電源111。 3 is a schematic block diagram of a submount of a plasma processing chamber in accordance with an embodiment of the present invention. Further, the method for manufacturing the electrostatic chuck of the plasma processing chamber provided by the present invention further comprises the step of connecting the soft metal connecting line 1017 below the metal connecting line 1016, thereby completing all the connecting lines of the direct current electrode 110 and the direct current power source. Among them, in the soft metal At the lower end of the wiring 1017, that is, a connector 1017a is formed under the base 106 at the soft metal connection 1017, extending to connect to the DC power source 111 shown in FIG.
如圖3所示，根據本發明的一個變形例，還可以在靜電夾盤101之上塗覆兩層抗腐蝕層，也就是在原有的抗腐蝕層1018上再塗覆一層抗腐蝕層1019，以使得靜電夾盤101具有加強的功能。本發明提供的靜電夾盤101的製造方法能夠實現在靜電夾盤101上連續不斷地塗覆多層抗腐蝕層，即使抗腐蝕層的質地再又軟，也不會造成直流電極110的破損。 As shown in FIG. 3, according to a modification of the present invention, two layers of anti-corrosion layer may be coated on the electrostatic chuck 101, that is, an anti-corrosion layer 1019 is further coated on the original anti-corrosion layer 1018 to The electrostatic chuck 101 is made to have an enhanced function. The manufacturing method of the electrostatic chuck 101 provided by the present invention can continuously apply a plurality of anti-corrosion layers on the electrostatic chuck 101, and even if the texture of the anti-corrosion layer is soft again, the DC electrode 110 is not damaged.
儘管本發明的內容已經通過上述實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的權利要求來限定。此外，不應將權利要求中的任何附圖標記視為限制所涉及的權利要求；“包括”一詞不排除其它權利要求或說明書中未列出的裝置或步驟；“第一”、“第二”等詞語僅用來表示名稱，而並不表示任何特定的順序。 Although the present invention has been described in detail by the above embodiments, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those skilled in the art. Therefore, the scope of the invention should be defined by the appended claims. In addition, any reference signs in the claims should not be construed as limiting the claims; the word "comprising" does not exclude the means or steps that are not listed in the other claims or the description; "first", " Words such as "two" are used only to denote a name, and do not denote any particular order.
106‧‧‧基台 106‧‧‧Abutment
1012‧‧‧陶瓷基底 1012‧‧‧Ceramic substrate
1016‧‧‧金屬連接線 1016‧‧‧Metal cable
1017‧‧‧軟金屬連接線 1017‧‧‧Soft metal cable
1017a‧‧‧接頭 1017a‧‧‧ connector
1018‧‧‧抗腐蝕層 1018‧‧‧Anti-corrosion layer
1019‧‧‧抗腐蝕層 1019‧‧‧Anti-corrosion layer
110‧‧‧直流電極 110‧‧‧DC electrode
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| CN108428661B (en) * | 2017-02-15 | 2020-11-13 | 中微半导体设备(上海)股份有限公司 | Substrate bearing table for vacuum processing device and manufacturing method thereof |
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| JP2007258615A (en) * | 2006-03-24 | 2007-10-04 | Ngk Insulators Ltd | Electrostatic chuck |
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| TW522539B (en) * | 2002-02-25 | 2003-03-01 | Taiwan Semiconductor Mfg | Multi-metal-layer interconnect structure and method for testing strength of intermetal dielectric layer |
| US7072165B2 (en) * | 2003-08-18 | 2006-07-04 | Axcelis Technologies, Inc. | MEMS based multi-polar electrostatic chuck |
| CN1559740A (en) * | 2004-02-25 | 2005-01-05 | 山东大学 | Diffusion welding technology of activity increasing intermediate layer of iron trialuminium alloy and steel |
| TW200826226A (en) * | 2006-08-10 | 2008-06-16 | Tokyo Electron Ltd | Electrostatic attraction electrode, substrate processor, and manufacturing method for electrostatic attraction electrode |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN104752119B (en) | 2017-08-25 |
| TW201535456A (en) | 2015-09-16 |
| CN104752119A (en) | 2015-07-01 |
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