TW201537635A - Plasma processing chamber, gas-spraying head, and manufacturing method thereof - Google Patents
Plasma processing chamber, gas-spraying head, and manufacturing method thereof Download PDFInfo
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Abstract
Description
本發明涉及半導體製造領域，尤其涉及一種等離子體處理腔室、氣體噴淋頭及其製造方法。 The present invention relates to the field of semiconductor manufacturing, and in particular, to a plasma processing chamber, a gas shower head, and a method of fabricating the same.
等離子處理裝置利用真空反應室的工作原理進行半導體基片和等離子平板的基片的加工。真空反應室的工作原理是在真空反應室中通入含有適當刻蝕劑源氣體的反應氣體，然後再對該真空反應室進行射頻能量輸入，以啟動反應氣體，來激發和維持等離子體，以便分別刻蝕基片表面上的材料層或在基片表面上澱積材料層，進而對半導體基片和等離子平板進行加工。 The plasma processing apparatus performs processing of the substrate of the semiconductor substrate and the plasma flat plate by using the working principle of the vacuum reaction chamber. The working principle of the vacuum reaction chamber is to pass a reaction gas containing a suitable etchant source gas into the vacuum reaction chamber, and then input RF energy to the vacuum reaction chamber to start the reaction gas to excite and maintain the plasma. The semiconductor substrate and the plasma plate are processed by etching a material layer on the surface of the substrate or depositing a material layer on the surface of the substrate.
氣體噴淋頭是等離子體處理裝置中的重要組成部分。在等離子體處理裝置外部設置有一個或多個氣體源，氣體源通過氣體輸送管道將一種或多種反應氣體輸送到氣體噴淋頭。氣體噴淋頭設置於等離子體處理裝置腔室內部的上方，腔室下方與氣體噴淋頭平行的區域還設置有一個放置基片的基台，在氣體噴淋頭和基台之間是製程區域。氣體噴淋頭之中設置有若干氣孔，反應氣體通過若干氣孔均勻地進入製程區域，並在射頻功率源的作用下被激發成等離子體。由於氣體噴淋頭的下表面直接曝露於等離子體，因此往往需要在其上設置抗腐蝕層，但是，隨著使用時間的增大，氣體噴淋頭往往也會產生開裂等問題。 Gas showerheads are an important part of plasma processing equipment. One or more gas sources are disposed external to the plasma processing apparatus, and the gas source delivers one or more reactive gases to the gas showerhead through the gas delivery conduit. The gas shower head is disposed above the chamber of the plasma processing apparatus, and a region of the substrate parallel to the gas shower head is further provided with a base for placing the substrate, and the process between the gas shower head and the base is a process region. A plurality of pores are disposed in the gas shower head, and the reaction gas uniformly enters the process area through a plurality of pores, and is excited into a plasma by the RF power source. Since the lower surface of the gas shower head is directly exposed to the plasma, it is often necessary to provide a corrosion-resistant layer thereon, but as the use time increases, the gas shower head often causes cracking and the like.
因此，業內一直致力於研究穩定可靠、抗腐蝕能力強的氣體噴淋頭。 Therefore, the industry has been working on stable, reliable, corrosion-resistant gas showerheads.
針對背景技術中的上述問題，本發明提出了一種等離子體處理腔室、氣體噴淋頭及其製造方法。 In view of the above problems in the background art, the present invention proposes a plasma processing chamber, a gas shower head, and a method of fabricating the same.
本發明第一方面提供了一種用於等離子體處理腔室的氣體噴淋頭，其中，所述氣體噴淋頭是一體成型的，其中設置有若干個一次加工完成的氣體通孔，所述氣體噴淋頭外壁以及氣體通孔內壁覆蓋有一層第一抗腐蝕層。 A first aspect of the present invention provides a gas showerhead for a plasma processing chamber, wherein the gas showerhead is integrally formed, wherein a plurality of once-processed gas through holes are provided, the gas The outer wall of the shower head and the inner wall of the gas through hole are covered with a first anti-corrosion layer.
進一步地，所述氣體噴淋頭側壁以及曝露於等離子體的下表面上的第一抗腐蝕層上，覆蓋有一層第二抗腐蝕層。 Further, the gas shower head sidewall and the first anti-corrosion layer exposed on the lower surface of the plasma are covered with a second anti-corrosion layer.
進一步地，所述氣體噴淋頭中設置有加熱裝置。 Further, a heating device is disposed in the gas shower head.
進一步地，所述第一抗腐蝕層和第二抗腐蝕層的材料選自以下任一項或任多項：Y2O3、YF3、ErO2、Al2O3。 Further, the material of the first anti-corrosion layer and the second anti-corrosion layer is selected from any one or more of the following: Y 2 O 3 , YF 3 , ErO 2 , Al 2 O 3 .
進一步地，所述第一抗腐蝕層和第二抗腐蝕層的沉積方法分別選自以下任一項：等離子體浸沒離子注入與沉積方法、物理氣相沉積、化學氣相沉積。 Further, the deposition methods of the first anti-corrosion layer and the second anti-corrosion layer are respectively selected from any one of the following: plasma immersion ion implantation and deposition method, physical vapor deposition, chemical vapor deposition.
進一步地，所述第一抗腐蝕層的厚度取值範圍為大於0.5um。 Further, the thickness of the first anti-corrosion layer ranges from greater than 0.5 um.
進一步地，所述第二抗腐蝕層的厚度取值範圍是由所述氣體噴淋頭以及所述第一抗腐蝕層的使用壽命決定的，並且所述第二抗腐蝕層的厚度大於所述第一抗腐蝕層的厚度。 Further, a thickness range of the second anti-corrosion layer is determined by a service life of the gas shower head and the first anti-corrosion layer, and a thickness of the second anti-corrosion layer is greater than The thickness of the first corrosion resistant layer.
進一步地，所述氣體噴淋頭是由鋁合金製成的。 Further, the gas shower head is made of an aluminum alloy.
本發明第二方面提供了一種用於等離子體處理腔室的氣體噴淋頭的製造方法，其中，其包括本發明第一方面的氣體噴淋頭，其中，所述製造方法包括如下步驟：提供一鋁合金基底；在所述鋁合金基地上從上到下鑽若干個氣體通孔，形成氣體噴淋頭；在所述氣體噴淋頭的外壁以及氣體通孔的內壁沉積一層第一抗腐蝕層；在所述氣體噴淋頭的側壁和曝露於等離子體的表面沉積一層第二抗腐蝕層。 A second aspect of the present invention provides a method of manufacturing a gas showerhead for a plasma processing chamber, which comprises the gas showerhead of the first aspect of the invention, wherein the manufacturing method comprises the steps of: providing An aluminum alloy substrate; a plurality of gas through holes are drilled from top to bottom on the aluminum alloy base to form a gas shower head; and a first anti-deposit is deposited on an outer wall of the gas shower head and an inner wall of the gas through hole a corrosion layer; a second corrosion resistant layer is deposited on the sidewall of the gas showerhead and the surface exposed to the plasma.
進一步地，所述方法還包括在氣體噴淋頭中設置加熱裝置的步驟。 Further, the method further includes the step of providing a heating device in the gas showerhead.
進一步地，所述製造方法包括如下步驟：在所述氣體噴淋頭的外壁以及氣體通孔的內壁採用等離子體浸沒離子注入與沉積方法沉積一層第一抗腐蝕層。 Further, the manufacturing method includes the steps of depositing a first anti-corrosion layer by plasma immersion ion implantation and deposition on the outer wall of the gas shower head and the inner wall of the gas through hole.
進一步地，所述製造方法包括如下步驟：在所述氣體噴淋頭的側壁和曝露於等離子體的表面採用物理氣相沉積沉積一層第二抗腐蝕層。 Further, the manufacturing method includes the steps of depositing a second anti-corrosion layer by physical vapor deposition on a sidewall of the gas shower head and a surface exposed to the plasma.
本發明協力廠商面提供了一種等離子體處理腔室，其中，所述等離子體處理腔室包括本發明第一方面所述的氣體噴淋頭。 A synergistic manufacturer of the present invention provides a plasma processing chamber, wherein the plasma processing chamber comprises the gas shower head of the first aspect of the invention.
本發明提供的等離子體處理腔室、氣體噴淋頭及其製造方法 工序簡單、製造成本低。氣體噴淋頭結構更加穩定可靠，並且抗腐蝕層無空隙且更稠密，不會開裂。本發明提供的等離子體處理腔室中基片製程更加穩定。 Plasma processing chamber, gas shower head and manufacturing method thereof provided by the invention The process is simple and the manufacturing cost is low. The gas showerhead structure is more stable and reliable, and the corrosion-resistant layer has no voids and is denser and does not crack. The substrate processing in the plasma processing chamber provided by the invention is more stable.
100‧‧‧氣體噴淋頭 100‧‧‧ gas sprinkler
101‧‧‧第一主體 101‧‧‧ first subject
102‧‧‧第二主體 102‧‧‧Second subject
103‧‧‧基板 103‧‧‧Substrate
104‧‧‧氧化釔塗層 104‧‧‧Oxide coating
105‧‧‧加熱裝置 105‧‧‧ heating device
106a‧‧‧第一通孔 106a‧‧‧First through hole
106b‧‧‧第二通孔 106b‧‧‧second through hole
106c‧‧‧第三通孔 106c‧‧‧ third through hole
a‧‧‧接觸面 a‧‧‧Contact surface
200‧‧‧氣體噴淋頭 200‧‧‧ gas sprinkler
202‧‧‧氣體通孔 202‧‧‧ gas through hole
204‧‧‧第一抗腐蝕層 204‧‧‧First corrosion resistant layer
205‧‧‧加熱裝置 205‧‧‧ heating device
206‧‧‧第二抗腐蝕層 206‧‧‧Second anti-corrosion layer
300‧‧‧氣體源 300‧‧‧ gas source
400‧‧‧基台 400‧‧‧Abutment
500‧‧‧直流電極 500‧‧‧DC electrode
700‧‧‧處理腔體側壁 700‧‧‧Processing cavity sidewall
800‧‧‧中空泵泵 800‧‧‧ hollow pump
900‧‧‧閥門 900‧‧‧ valve
A‧‧‧等離子刻蝕腔室 A‧‧‧plasma etching chamber
W‧‧‧基片 W‧‧‧ substrates
第1圖，為現有技術的等離子體處理腔室的氣體噴淋頭的結構示意圖。 Figure 1 is a schematic view showing the structure of a gas showerhead of a prior art plasma processing chamber.
第2圖，為本發明一個具體實施例的用於等離子體處理腔室的結構示意圖。 Fig. 2 is a schematic view showing the structure of a plasma processing chamber according to an embodiment of the present invention.
第3圖，為本發明一個具體實施例的用於等離子體處理腔室的氣體噴淋頭的結構示意圖。 Figure 3 is a schematic view showing the structure of a gas shower head for a plasma processing chamber according to an embodiment of the present invention.
以下結合附圖，對本發明的具體實施方式進行說明。 Specific embodiments of the present invention will be described below with reference to the accompanying drawings.
要指出的是，“半導體工藝件”、“晶圓”和“基片”這些詞在隨後的說明中將被經常互換使用，在本發明中，它們都指在處理反應室內被加工的工藝件，工藝件不限於晶圓、襯底、基片、大面積平板基板等。為了方便說明，本文在實施方式說明和圖示中將主要以“基片”為例來作示例性說明。 It is to be noted that the terms "semiconductor process", "wafer" and "substrate" will be used interchangeably in the following description. In the present invention, they all refer to process parts that are processed in the processing chamber. The process member is not limited to a wafer, a substrate, a substrate, a large-area flat substrate, or the like. For convenience of description, the "substrate" will be mainly exemplified in the description and illustration of the embodiments herein.
第1圖是現有技術的等離子體處理腔室的氣體噴淋頭的結構示意圖。如第1圖所示，氣體噴淋頭100從上到下包括安裝基板103、第二主體102和第一主體101以及氧化釔塗層104。其中，第一主體101上設置有若干個第一通孔106a，第二主體102上設置有若干個第二通孔106b。第一主體101和第二主體102是分別加工完成的，即，分別提供基地並在其中鑽孔。因此，第一通孔106a和第二通孔106b並不是一次加工完成的。 第一主體101和第二主體102分別鑽孔完成以後再壓合在一起組成氣體噴淋頭100的主體部分。安裝基板103作為氣體噴淋頭100的安裝框架，作為氣體噴淋頭的其他元件的支撐件和安裝件。由於反應氣體是從上而下流入氣體噴淋頭100的，因此，安裝基板103上還適應性地設置有若干個第三通孔106c。也就是，反應氣體按照從上而下的順序分別流經第三通孔106c，第二通孔106b和第一通孔106a進入製程區域，從而在射頻功率的作用下激發成為等離子體，以對基片進行製程。最後，在氣體噴淋頭100曝露于製程區域中的等離子體的背面再塗覆一層氧化釔塗層104，用於防止等離子體的腐蝕，延長氣體噴淋頭的使用壽命。 Figure 1 is a schematic view showing the structure of a gas showerhead of a prior art plasma processing chamber. As shown in FIG. 1, the gas shower head 100 includes a mounting substrate 103, a second body 102, a first body 101, and a ruthenium oxide coating layer 104 from top to bottom. The first body 101 is provided with a plurality of first through holes 106a, and the second body 102 is provided with a plurality of second through holes 106b. The first body 101 and the second body 102 are separately processed, that is, the base is separately provided and drilled therein. Therefore, the first through hole 106a and the second through hole 106b are not processed in one pass. The first body 101 and the second body 102 are respectively pressed together to form a main portion of the gas shower head 100 after the drilling is completed. The mounting substrate 103 serves as a mounting frame for the gas shower head 100 as a support member and a mounting member for other components of the gas shower head. Since the reaction gas flows into the gas shower head 100 from the top to the bottom, the mounting substrate 103 is also provided with a plurality of third through holes 106c. That is, the reaction gas flows through the third through holes 106c in the order from top to bottom, and the second through holes 106b and the first through holes 106a enter the process region, thereby exciting the plasma into a plasma under the action of the radio frequency power. The substrate is processed. Finally, a layer of ruthenium oxide coating 104 is applied to the back side of the plasma in which the gas showerhead 100 is exposed to the process zone for preventing plasma corrosion and prolonging the service life of the gas showerhead.
然而，現有技術的氣體噴淋頭存在很多缺陷。以電容耦合性等離子體處理腔室(CCP)為例，用碳化矽(SiC)製成的氣體噴淋頭100的第一主體101會在製程過程中被不同種類的鹵素等離子體轟擊，例如由CF4,Cl2等反應氣體激發產生的等離子體。這樣的氣體噴淋頭100也會有高成本和使用時間有限的問題。因此，為了改善性能和降低成本，現有技術的氣體噴淋頭100進一步地在其曝露於等離子體的表面採用等離子體噴塗(Plasma Spray)塗覆了一層氧化釔塗層(Y2O3)104，而氣體噴淋頭100的其他區域均採用陽極化處理(anodized)以達到抗腐蝕的目的。由於等離子體噴塗的氧化釔塗層104粗糙表面的多孔結構(porous structure)，這樣的氣體噴淋頭100在等離子體製程中具有很高的顆粒污染風險(particle creation risk)。 However, prior art gas showerheads have a number of drawbacks. Taking a capacitively coupled plasma processing chamber (CCP) as an example, the first body 101 of the gas shower head 100 made of tantalum carbide (SiC) is bombarded by different kinds of halogen plasma during the process, for example by The generated gas is excited by a reaction gas such as CF 4 or Cl 2 . Such a gas shower head 100 also has problems of high cost and limited use time. Therefore, in order to improve performance and reduce cost, the prior art gas shower head 100 is further coated with a yttrium oxide coating (Y 2 O 3 ) 104 by plasma spraying on its surface exposed to the plasma. The other areas of the gas shower head 100 are anodized to achieve corrosion resistance. Due to the porous structure of the rough surface of the plasma sprayed yttria coating 104, such a gas showerhead 100 has a high particle creation risk in the plasma process.
現有技術為了進一步改善性能穩定性，氣體噴淋頭100進一步地採用物理氣相沉積沉積沒有孔隙並高密度的氧化釔塗層104於氣體噴 淋頭100曝露於等離子體的表面。這樣的設置使得金屬污染物和顆粒污染物的確減少，這是由於採用了物理氣相沉積塗覆氧化釔塗層104和氣體噴淋頭100的金屬基底(第一主體101)，例如鋁合金。然而，如第1圖所示，在電容耦合型等離子體處理腔室中，加熱裝置105設置在氣體噴淋頭之上的第二主體102中，所述第二主體102由鋁合金製成並內嵌有若干加熱裝置105，其外表面也是經過陽極化處理的。 In order to further improve performance stability, the gas shower head 100 further uses physical vapor deposition to deposit a high-density yttrium oxide coating 104 on a gas jet. The shower head 100 is exposed to the surface of the plasma. Such an arrangement results in a reduction in metal contaminants and particulate contaminants due to the physical vapor deposition of the yttrium oxide coating 104 and the metal substrate (first body 101) of the gas shower head 100, such as an aluminum alloy. However, as shown in FIG. 1, in the capacitive coupling type plasma processing chamber, the heating device 105 is disposed in the second body 102 above the gas shower head, and the second body 102 is made of aluminum alloy and A plurality of heating devices 105 are embedded, the outer surface of which is also anodized.
如第1圖所示，等離子體製程的穩定性會被氣體噴淋頭100和加熱裝置105以及安裝基板103影響，這是由於在內嵌了加熱裝置105的第二主體102和第一主體101之間存在了一個介面/接觸面a，該接觸面a會影響加熱裝置105產生的熱量在第一主體101和第二主體102之間的傳播。並且，雖然現有技術採用各種技術儘量將第一主體101和第二主體102壓制在一起，儘量使得接觸面a是沒有空隙的趨近於0的，但是接觸面a仍然存在空間，使得第一主體101和第二主體102的容量和電勢產生變化，因此會導致基片表面的等離子體分佈。另外，接觸面a的空隙也會使得不同的反應氣體通過此空隙進入各個氣體通道，例如當需要分別通入兩種以上不同反應氣體時，氣體會在進入製程區域之間發生混合從而不能達成製程目的。此外，第一主體101是碳化矽製成的，第二主體102是鋁合金製成的，兩者之間工藝不穩定，並且由於製造工序繁雜製造成本也會上升。 As shown in FIG. 1, the stability of the plasma process is affected by the gas shower head 100 and the heating device 105 and the mounting substrate 103 due to the second body 102 and the first body 101 in which the heating device 105 is embedded. There is an interface/contact surface a that affects the propagation of heat generated by the heating device 105 between the first body 101 and the second body 102. Moreover, although the prior art employs various techniques to press the first body 101 and the second body 102 together as much as possible, the contact surface a is as close as possible to the zero without the gap, but the contact surface a still has a space, so that the first body The capacity and potential of the 101 and second body 102 are varied, thus causing a plasma distribution on the surface of the substrate. In addition, the gap of the contact surface a also allows different reaction gases to enter the respective gas passages through the gap. For example, when two or more different reaction gases need to be separately introduced, the gas may be mixed between the process regions and the process cannot be achieved. purpose. Further, the first body 101 is made of tantalum carbide, and the second body 102 is made of aluminum alloy, the process between the two is unstable, and the manufacturing cost is increased due to complicated manufacturing processes.
需要說明的是，現有技術的氣體噴淋頭100主體是第一主體101，而第二主體102主要是為了承載加熱裝置105而設置的，並且為了使得反應氣體順利進入腔室而在其中設置了若干氣體通孔。 It should be noted that the main body of the prior art gas shower head 100 is the first body 101, and the second body 102 is mainly provided for carrying the heating device 105, and is disposed therein for the reaction gas to smoothly enter the chamber. Several gas through holes.
基於此，本發明提供了一種等離子體處理腔室、氣體噴淋頭 及其製造方法，下文將結合電容耦合型等離子體刻蝕腔室為例對本發明進行描述。需要說明的是，本領域技術人員應當理解，本發明不僅適用於電容耦合型等離子體刻蝕腔室，還適用於化學氣相沉積裝置和金屬有機氣相沉積裝置等。本發明優選實施例中的電容耦合型等離子體刻蝕腔室並不視為對本發明的限制。第2圖是根據本發明一個具體實施例的用於等離子體處理腔室的結構示意圖。如第2圖所示，等離子體刻蝕腔室A具有一個處理腔體，處理腔體基本上為柱形，且處理腔體側壁700基本上垂直，處理腔體內具有相互平行設置的上電極和下電極，其中上電極集成在氣體噴淋頭附近，下電極集成在基台400之中，均未示出。通常，在上電極與下電極之間的區域為處理區域P，該處理區域P將形成高頻能量以點燃和維持等離子體。在基台400中的靜電夾盤上方放置待要加工的基片W，該基片W可以是待要刻蝕或加工的半導體基片或者待要加工成平板顯示器的玻璃平板。其中，所述靜電夾盤用於夾持基片W，夾持力是由設置在靜電夾盤上層絕緣層之上的直流電極500施加了直流電壓600之後產生。反應氣體從氣體源300中被輸入至處理腔體內，一個或多個射頻電源600可以被單獨地施加在下電極上或同時被分別地施加在上電極與下電極上，用以將射頻功率輸送到下電極上或上電極與下電極上，從而在處理腔體內部產生大的電場。大多數電場線被包含在上電極和下電極之間的處理區域內，此電場對少量存在於處理腔體內部的電子進行加速，使之與輸入的反應氣體的氣體分子碰撞。這些碰撞導致反應氣體的離子化和等離子體的激發，從而在處理腔體內產生等離子體。反應氣體的中性氣體分子在經受這些強電場時失去了電子，留下帶正電的離子。帶正電的離子向著下電極方向加速，與 被處理的基片W中的中性物質結合，激發基片加工，即刻蝕、澱積等。在等離子體刻蝕腔室A的合適的某個位置處設置有排氣區域，排氣區域與外置的排氣裝置(例如真空泵泵800)相連接，用以在處理過程中將用過的反應氣體及副產品氣體抽出腔室。其中，腔室內還設置了等離子體約束環用於將等離子體約束於處理區域內。 Based on this, the present invention provides a plasma processing chamber and a gas shower head. And its manufacturing method, the present invention will be described below by taking a capacitive coupling type plasma etching chamber as an example. It should be noted that those skilled in the art should understand that the present invention is applicable not only to a capacitive coupling type plasma etching chamber but also to a chemical vapor deposition apparatus and a metal organic vapor deposition apparatus. The capacitively coupled plasma etching chamber in the preferred embodiment of the invention is not to be considered as limiting the invention. 2 is a schematic view of a structure for a plasma processing chamber in accordance with an embodiment of the present invention. As shown in FIG. 2, the plasma etching chamber A has a processing chamber, the processing chamber is substantially cylindrical, and the processing chamber sidewall 700 is substantially vertical, and the processing chamber has upper electrodes arranged in parallel with each other. The lower electrode, wherein the upper electrode is integrated near the gas shower head, and the lower electrode is integrated in the base 400, none of which is shown. Typically, the area between the upper and lower electrodes is the processing area P which will form high frequency energy to ignite and sustain the plasma. A substrate W to be processed is placed over the electrostatic chuck in the submount 400, which may be a semiconductor substrate to be etched or processed or a glass plate to be processed into a flat panel display. Wherein, the electrostatic chuck is used for clamping the substrate W, and the clamping force is generated by applying a DC voltage 600 to the DC electrode 500 disposed on the upper insulating layer of the electrostatic chuck. The reactive gas is input from the gas source 300 into the processing chamber, and the one or more RF power sources 600 can be separately applied to the lower electrode or simultaneously applied to the upper and lower electrodes, respectively, for delivering RF power to On the lower electrode or on the upper and lower electrodes, a large electric field is generated inside the processing chamber. Most of the electric field lines are contained in a processing region between the upper electrode and the lower electrode, which accelerates a small amount of electrons present inside the processing chamber to collide with gas molecules of the input reaction gas. These collisions result in ionization of the reactive gas and excitation of the plasma, thereby generating a plasma within the processing chamber. The neutral gas molecules of the reactive gas lose electrons when subjected to these strong electric fields, leaving positively charged ions. Positively charged ions accelerate toward the lower electrode, The neutral material in the treated substrate W is bonded to excite substrate processing, i.e., etching, deposition, and the like. An exhaust region is provided at a suitable location of the plasma etch chamber A, and the exhaust region is coupled to an external exhaust device (eg, vacuum pump 800) for use during processing The reaction gas and by-product gas are withdrawn from the chamber. A plasma confinement ring is also disposed in the chamber for confining the plasma within the processing region.
第3圖是根據本發明一個具體實施例的用於等離子體處理腔室的氣體噴淋頭的結構示意圖。其中，氣體噴淋頭200設置於腔室上部，其通過氣體管路連接於氣體源300，在所述氣體噴淋頭200和氣體源300之間連接有一閥門900。開啟閥門900，一種或多種反應氣體便從氣體源300流經氣體管路進入氣體噴淋頭200。氣體噴淋頭200中設置有若干個氣體通孔202，氣體噴淋頭200的形狀是有一定厚度的平板狀，氣體通孔202均勻地分散地設置在氣體噴淋頭200中，因此，反應氣體通過氣體通孔202均勻地進入到製程空間P在射頻能量的作用下被激發成等離子體，從而對基台400上放置的基片W進行製程。 Figure 3 is a schematic illustration of the structure of a gas showerhead for a plasma processing chamber in accordance with an embodiment of the present invention. The gas shower head 200 is disposed at an upper portion of the chamber, and is connected to the gas source 300 through a gas line, and a valve 900 is connected between the gas shower head 200 and the gas source 300. Opening the valve 900, one or more reactive gases flow from the gas source 300 through the gas line into the gas showerhead 200. The gas shower head 200 is provided with a plurality of gas through holes 202. The shape of the gas shower head 200 is a flat plate having a certain thickness, and the gas through holes 202 are uniformly dispersedly disposed in the gas shower head 200. Therefore, the reaction The gas is uniformly introduced into the process space P through the gas through holes 202 to be excited into a plasma by the radio frequency energy, thereby performing processing on the substrate W placed on the base 400.
其中，在本發明中，所述氣體噴淋頭200是一體成型(one piece)的。如第3圖所示，氣體噴淋頭200是一整塊基體製造而成的，並不是現有技術將兩塊主體壓制在一起。所述氣體噴淋頭200中設置有若干個從上到下一次加工完成的氣體通孔202。因此，本發明避免了現有技術中氣體噴淋頭由上下兩個主體壓制而成，其接觸面產生空隙，從而產生反應氣體在進入製程區域P之前的相互混合，也避免了現有技術氣體噴淋頭由於上下兩個主體製成材料不同而產生的不穩定性，以及製程工序繁複和成本上升的問題。 Among them, in the present invention, the gas shower head 200 is one piece. As shown in Fig. 3, the gas shower head 200 is manufactured from a single piece of substrate, and it is not the prior art that the two bodies are pressed together. The gas shower head 200 is provided with a plurality of gas through holes 202 that are processed from top to bottom. Therefore, the present invention avoids the prior art that the gas shower head is pressed by the upper and lower bodies, and the contact faces thereof generate gaps, thereby generating mutual mixing of the reaction gases before entering the process region P, and also avoiding the prior art gas spray. The head is unstable due to the difference in material between the upper and lower bodies, as well as the complexity of the process and the increase in cost.
此外，所述氣體噴淋頭200外壁以及氣體通孔202內壁覆蓋有一層第一抗腐蝕層204。這樣的表面處理使得鋁合金製成的氣體噴淋頭200被合成在曝露於等離子體表面的薄薄的第一抗腐蝕層204所保護，而由於第一抗腐蝕層204的隔離氣體噴淋頭200不再直接接觸到腐蝕性的製程氣體，而起氣體通孔202也不再由於製程氣體的通過而受到製程氣體的腐蝕作用。此外，本發明也避免了由於施加了射頻能量而導致製程氣體激發產生的等離子體直接接觸到氣體噴淋頭200曝露于製程區域P的表面。 In addition, the outer wall of the gas shower head 200 and the inner wall of the gas through hole 202 are covered with a first anti-corrosion layer 204. Such surface treatment causes the gas showerhead 200 made of aluminum alloy to be protected by a thin first corrosion resistant layer 204 exposed to the plasma surface, and the isolated gas showerhead due to the first corrosion resistant layer 204. The 200 is no longer in direct contact with the corrosive process gas, and the gas through hole 202 is no longer corroded by the process gas due to the passage of the process gas. In addition, the present invention also avoids that the plasma generated by the excitation of the process gas due to the application of the radio frequency energy is directly in contact with the surface of the gas shower head 200 exposed to the process region P.
進一步地，第一抗腐蝕層204的材料包括Y2O3或YF3，其厚度大約為至少0.5um。 Further, the material of the first anti-corrosion layer 204 includes Y 2 O 3 or YF 3 and has a thickness of about at least 0.5 μm.
進一步地，所述氣體噴淋頭200側壁以及曝露於等離子體的下表面上的第一抗腐蝕層204上，覆蓋有一層第二抗腐蝕層206。所述第二抗腐蝕層206的厚度是根據所需的氣體噴淋頭200以及第一抗腐蝕層204的使用壽命決定的。並且，第二抗腐蝕層206的厚度大於第一抗腐蝕層204。 Further, a sidewall of the gas shower head 200 and a first anti-corrosion layer 204 exposed on the lower surface of the plasma are covered with a second anti-corrosion layer 206. The thickness of the second anti-corrosion layer 206 is determined according to the required service life of the gas showerhead 200 and the first anti-corrosion layer 204. Also, the thickness of the second anti-corrosion layer 206 is greater than the first anti-corrosion layer 204.
進一步地，加熱裝置205直接設置在氣體噴淋頭200的基體中。由於加熱裝置205內嵌在氣體噴淋頭200中，因此具有加熱的功能。 Further, the heating device 205 is disposed directly in the base of the gas shower head 200. Since the heating device 205 is embedded in the gas shower head 200, it has a heating function.
進一步地，所述第一抗腐蝕層204和第二抗腐蝕層206的材料選自以下任一項或任多項：Y2O3、YF3、ErO2、Al2O3。優選地，所述第一抗腐蝕層204和第二抗腐蝕層206為Y2O3或YF3。 Further, the material of the first anti-corrosion layer 204 and the second anti-corrosion layer 206 is selected from any one or more of the following: Y 2 O 3 , YF 3 , ErO 2 , Al 2 O 3 . Preferably, the first anti-corrosion layer 204 and the second anti-corrosion layer 206 are Y 2 O 3 or YF 3 .
進一步地，所述第一抗腐蝕層204和第二抗腐蝕層206的沉積方法分別選自以下任一項：等離子體浸沒離子注入與沉積方法、物理氣相沉積、化學氣相沉積。上述製程方法將在下文中進行介紹。 Further, the deposition methods of the first anti-corrosion layer 204 and the second anti-corrosion layer 206 are respectively selected from any one of the following: plasma immersion ion implantation and deposition method, physical vapor deposition, chemical vapor deposition. The above process methods will be described below.
進一步地，氣體噴淋頭200是由鋁合金(Al alloy)材料製 成的，氣體噴淋頭200的氣體分佈模式(gas distribution patterns)具有特定的結構和氣體通孔202的分佈，這樣的幾何特徵可以輕易地配合或者安裝在安裝板(未示出，一般設置於氣體噴淋頭上方)上以形成等離子體刻蝕腔室A的整個包括上電極的氣體噴淋頭。 Further, the gas shower head 200 is made of an aluminum alloy material. The gas distribution patterns of the gas showerhead 200 have a specific structure and a distribution of the gas through holes 202. Such geometric features can be easily fitted or mounted on a mounting plate (not shown, generally disposed on Above the gas showerhead) to form a gas showerhead including the upper electrode of the plasma etch chamber A.
本發明第二方面提供了一種用於等離子體處理腔室的氣體噴淋頭200的製造方法。首先，提供一鋁合金基底。然後，在所述鋁合金基地上從上到下均勻而分散地鑽若干個氣體通孔202，形成氣體噴淋頭200，以形成特定的幾何特徵。接著，在所述氣體噴淋頭200的外壁以及氣體通孔202內壁沉積一層第一抗腐蝕層204。最後，在所述氣體噴淋頭200的側壁和曝露於等離子體的表面沉積一層第二抗腐蝕層206。 A second aspect of the present invention provides a method of fabricating a gas showerhead 200 for a plasma processing chamber. First, an aluminum alloy substrate is provided. Then, a plurality of gas through holes 202 are uniformly and discretely drilled from top to bottom on the aluminum alloy base to form a gas showerhead 200 to form specific geometric features. Next, a first anti-corrosion layer 204 is deposited on the outer wall of the gas showerhead 200 and the inner wall of the gas through hole 202. Finally, a second anti-corrosion layer 206 is deposited on the sidewalls of the gas showerhead 200 and the surface exposed to the plasma.
具體地，第一抗腐蝕層通過等離子體浸沒離子注入與沉積方法(plasma immersion ion deposition，PIID)、電鍍(electroplating)、濕法化學塗覆(wet chemical coating)例如溶膠凝膠等合成在氣體噴淋頭200的側壁以及氣體通孔202內壁。以上工藝製程方法能夠執行沒有視角線(none-line-of-sight)沉積以均勻分佈在氣體噴淋頭200的側壁以及氣體通孔202內壁。本發明的上述步驟是為了替代現有技術的氣體噴淋頭的表面陽極化處理，由此提高氣體噴淋頭的抗腐蝕能力，以氣體噴淋頭200能同時承受例如鹵素等離子體和鹵素氣體(例如Cl2)的腐蝕，從而使得氣體噴淋頭200具有更長的使用壽命。根據本發明的一個具體實施例，第一抗腐蝕層204是在低沉積溫度下(低於200℃)沉積在氣體噴淋頭200的側壁以及氣體通孔202內壁，這樣制得的塗層具有良好的粘附性，使得第一抗腐蝕層204能夠在以鋁合金、其他合金或者抗等離子體的塑膠等為基體的氣 體噴淋頭200上。 Specifically, the first anti-corrosion layer is synthesized in a gas jet by plasma immersion ion deposition (PIID), electroplating, wet chemical coating such as sol gel. The side wall of the shower head 200 and the inner wall of the gas through hole 202. The above process recipe method is capable of performing no-line-of-sight deposition to be evenly distributed on the sidewalls of the gas showerhead 200 and the inner walls of the gas through holes 202. The above steps of the present invention are intended to replace the surface anodizing treatment of the prior art gas shower head, thereby improving the corrosion resistance of the gas shower head, so that the gas shower head 200 can simultaneously withstand, for example, a halogen plasma and a halogen gas ( Corrosion, such as Cl 2 ), results in a gas showerhead 200 having a longer service life. According to a specific embodiment of the present invention, the first anti-corrosion layer 204 is deposited on the sidewall of the gas showerhead 200 and the inner wall of the gas through hole 202 at a low deposition temperature (less than 200 ° C), and the coating thus obtained is obtained. It has good adhesion so that the first anti-corrosion layer 204 can be on the gas shower head 200 based on aluminum alloy, other alloy or plasma-resistant plastic.
優選地，所述第一抗腐蝕層204由等離子體浸沒離子注入與沉積方法製成，其中，氣體噴淋頭的鋁合金基底被浸入在等離子體中並通常經過脈衝援助(pulse bailed)，然後加速離子從等離子體中提取(extracted)出來撞擊在鋁合金基底表面，其中離子與反應氣體和材料表面反應從而同時濃縮(condensed)為第一抗腐蝕層204。由於等離子體能夠在真空處理腔室中不同等離子體源的作用下產生，以及氣體噴淋頭基底通過離子植入被塗覆塗層，因此可以獲得均一和稠密(uniform and dense)的第一抗腐蝕層於氣體噴淋頭200的側壁以及氣體通孔202內壁。 Preferably, the first anti-corrosion layer 204 is made by a plasma immersion ion implantation and deposition method, wherein the aluminum alloy substrate of the gas shower head is immersed in a plasma and is usually pulse bailed, and then The accelerated ions are extracted from the plasma and impinge on the surface of the aluminum alloy substrate, wherein the ions react with the reaction gas and the surface of the material to be simultaneously condensed into the first anti-corrosion layer 204. Since the plasma can be generated by different plasma sources in the vacuum processing chamber, and the gas shower head substrate is coated by ion implantation, a uniform and dense first resistance can be obtained. The etching layer is on the sidewall of the gas showerhead 200 and the inner wall of the gas through hole 202.
進一步地，所述方法還包括在氣體噴淋頭200中設置加熱裝置205的步驟。關於加熱裝置205如何設置在氣體噴淋頭200中，現有技術有成熟的技術支援，為簡明起見，不再贅述。 Further, the method further includes the step of providing a heating device 205 in the gas showerhead 200. Regarding how the heating device 205 is disposed in the gas shower head 200, the prior art has mature technical support, and will not be described again for the sake of brevity.
其中，所述第二抗腐蝕層206典型地為氧化釔，其厚度典型地為大於20um，或者甚至大於80um。可選地，第二抗腐蝕層206可選地採用物理氣相沉積塗覆在所述氣體噴淋頭200側壁以及曝露於等離子體的下表面上的第一抗腐蝕層204上。 Wherein, the second anti-corrosion layer 206 is typically ruthenium oxide, and its thickness is typically greater than 20 um, or even greater than 80 um. Optionally, a second anti-corrosion layer 206 is optionally applied to the sidewalls of the gas showerhead 200 and the first anti-corrosion layer 204 exposed on the lower surface of the plasma using physical vapor deposition.
根據本發明提供的等離子體處理腔室、氣體噴淋頭及其製造方法，氣體噴淋頭被安裝於等離子體處理腔室內並形成了具有抗等離子體輔食的表面的整個上電極。由於氣體噴淋頭是一體成型的，加熱裝置也一併設置於氣體噴淋頭中，氣體噴淋頭的溫度在多個具體製程中能夠被更加精確地控制。並且，由於沒有額外的例如現有技術氣體噴淋頭的上下兩個主體的接觸面空隙帶來的容量變化，基片製程的穩定性被改善了。由於氣 體噴淋頭具有抗腐蝕層以及沒有空隙並稠密的結構，腔室內顆粒污染也被極大降低，腔室使用壽命得到了提高。現有技術氣體噴淋頭的陽極化表面在100℃的溫度下容易開裂，本發明也不存在這個缺陷。 According to the plasma processing chamber, the gas shower head and the method of manufacturing the same provided by the present invention, the gas shower head is installed in the plasma processing chamber and forms the entire upper electrode having a surface resistant to plasma food. Since the gas shower head is integrally formed, the heating device is also disposed in the gas shower head, and the temperature of the gas shower head can be more precisely controlled in a plurality of specific processes. Also, the stability of the substrate process is improved because there is no additional capacity variation due to the contact surface voids of the upper and lower bodies of, for example, prior art gas showerheads. Due to gas The body sprinkler has an anti-corrosion layer and a structure without voids and dense, the particle contamination in the chamber is also greatly reduced, and the service life of the chamber is improved. The anodized surface of the prior art gas shower head is susceptible to cracking at a temperature of 100 ° C, and this defect is not present in the present invention.
儘管本發明的內容已經通過上述優選實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的權利要求來限定。此外，不應將權利要求中的任何附圖標記視為限制所涉及的權利要求；“包括”一詞不排除其它權利要求或說明書中未列出的裝置或步驟；“第一”、“第二”等詞語僅用來表示名稱，而並不表示任何特定的順序。 Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those skilled in the art. Therefore, the scope of the invention should be defined by the appended claims. In addition, any reference signs in the claims should not be construed as limiting the claims; the word "comprising" does not exclude the means or steps that are not listed in the other claims or the description; "first", " Words such as "two" are used only to denote a name, and do not denote any particular order.
202‧‧‧氣體通孔 202‧‧‧ gas through hole
204‧‧‧第一抗腐蝕層 204‧‧‧First corrosion resistant layer
205‧‧‧加熱裝置 205‧‧‧ heating device
206‧‧‧第二抗腐蝕層 206‧‧‧Second anti-corrosion layer
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| TWI582823B (en) * | 2015-11-17 | 2017-05-11 | 弘潔科技股份有限公司 | A gas distribution plate for plasmas reaction chamber |
| TWI705850B (en) * | 2018-06-21 | 2020-10-01 | 大陸商中微半導體設備（上海）股份有限公司 | Corrosion-resistant gas mixing device and plasma processing equipment |
| TWI790482B (en) * | 2019-10-25 | 2023-01-21 | 大陸商中微半導體設備（上海）股份有限公司 | Gas shower head components and plasma processing equipment |
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| US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
| US10186400B2 (en) * | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
| US10755900B2 (en) * | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
| CN109939618A (en) * | 2019-03-26 | 2019-06-28 | 沈阳拓荆科技有限公司 | Spray structure and chemical source supply system |
| CN112908819B (en) * | 2019-12-03 | 2022-04-01 | 长鑫存储技术有限公司 | Gas distributor and processing method thereof |
| CN113594013B (en) * | 2020-04-30 | 2024-01-26 | 中微半导体设备(上海)股份有限公司 | Component, method and device for forming coating layer and plasma reaction device |
| CN114068273B (en) * | 2020-07-31 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Component, preparation method thereof and plasma reaction device |
| CN114300336B (en) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | Plasma reactor |
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| EP0648858A1 (en) * | 1993-10-15 | 1995-04-19 | Applied Materials, Inc. | Methods of coating plasma etch chambers and apparatus for plasma etching workpieces |
| US8216640B2 (en) * | 2009-09-25 | 2012-07-10 | Hermes-Epitek Corporation | Method of making showerhead for semiconductor processing apparatus |
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| CN102268656B (en) * | 2011-08-05 | 2013-05-01 | 中微半导体设备(上海)有限公司 | Sprinkler of metal organic chemical vapor deposition (MOCVD) equipment as well as manufacture method and use method thereof |
| CN102522306A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Spray head |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI582823B (en) * | 2015-11-17 | 2017-05-11 | 弘潔科技股份有限公司 | A gas distribution plate for plasmas reaction chamber |
| TWI705850B (en) * | 2018-06-21 | 2020-10-01 | 大陸商中微半導體設備（上海）股份有限公司 | Corrosion-resistant gas mixing device and plasma processing equipment |
| TWI790482B (en) * | 2019-10-25 | 2023-01-21 | 大陸商中微半導體設備（上海）股份有限公司 | Gas shower head components and plasma processing equipment |
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| CN104715993B (en) | 2017-02-22 |
| CN104715993A (en) | 2015-06-17 |
| TWI541894B (en) | 2016-07-11 |
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