TWI576942B - A manufacturing apparatus for a semiconductor device and a method for manufacturing the semiconductor device - Google Patents

A manufacturing apparatus for a semiconductor device and a method for manufacturing the semiconductor device Download PDF

Info

Publication number
TWI576942B
TWI576942B TW104106386A TW104106386A TWI576942B TW I576942 B TWI576942 B TW I576942B TW 104106386 A TW104106386 A TW 104106386A TW 104106386 A TW104106386 A TW 104106386A TW I576942 B TWI576942 B TW I576942B
Authority
TW
Taiwan
Prior art keywords
head
stage
control
load
substrate
Prior art date
Application number
TW104106386A
Other languages
English (en)
Other versions
TW201613010A (en
Inventor
小牟田直幸
Original Assignee
東芝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝股份有限公司 filed Critical 東芝股份有限公司
Publication of TW201613010A publication Critical patent/TW201613010A/zh
Application granted granted Critical
Publication of TWI576942B publication Critical patent/TWI576942B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/04—Heating appliances
    • B23K3/047—Heating appliances electric
    • B23K3/0478—Heating appliances electric comprising means for controlling or selecting the temperature or power
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/755—Cooling means
    • H01L2224/75502—Cooling means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75701—Means for aligning in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75702—Means for aligning in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75753—Means for optical alignment, e.g. sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H01L2224/75801—Lower part of the bonding apparatus, e.g. XY table
    • H01L2224/75802—Rotational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H01L2224/75801—Lower part of the bonding apparatus, e.g. XY table
    • H01L2224/75804—Translational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/75822—Rotational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/75824—Translational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759—Means for monitoring the connection process
    • H01L2224/75901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759—Means for monitoring the connection process
    • H01L2224/7592—Load or pressure adjusting means, e.g. sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/81048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/81149—Aligning involving movement of a part of the bonding apparatus being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
    • H01L2224/8115—Rotational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/81149—Aligning involving movement of a part of the bonding apparatus being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
    • H01L2224/8116—Translational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/81169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/8117—Rotational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/81169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/8118—Translational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909—Post-treatment of the bump connector or bonding area
    • H01L2224/81948—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/384—Bump effects
    • H01L2924/3841—Solder bridging

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Description

半導體裝置之製造裝置及半導體裝置之製造方法 [相關申請案]
本申請案享有以日本專利申請案2014-187678號(申請日：2014年9月16日)作為基礎申請案的優先權。本申請案通過參照該基礎申請案而包含基礎申請案的所有內容。
本發明之實施形態係關於一種半導體裝置之製造裝置及半導體裝置之製造方法。
作為電性連接於形成於半導體元件之金屬電極墊及形成於安裝用基板之焊料等金屬凸塊的製造裝置，有如下製造裝置。
即，例如於具備頭部及載物台之構成中，於載物台載置形成有金屬凸塊之基板，並於頭部安裝形成有金屬電極墊之半導體元件。載物台被預加熱至金屬不會熔融之程度，並於使頭部下降從而半導體元件之金屬墊與載物台上之基板之金屬凸塊接觸時保持。接下來，通過頭部之加熱機構進行加熱而使半導體元件之金屬墊之溫度上升，藉此使接觸之金屬凸塊熔融。
其後，通過停止加熱而使金屬凸塊冷卻並成為與金屬墊電性連接之狀態。此後，通過解除利用頭部進行之半導體元件之安裝並使頭部上升，可獲得將半導體元件電性連接於基板之狀態之半導體裝置。
然而，在上述半導體裝置之製造步驟中，頭部或載物台因進行加熱而導致高度方向之長度因膨脹而發生變化，位於前端部分之保持 有半導體元件及基板之位置因膨脹而發生變化。因此，有如下不良情況：因半導體元件之金屬墊與基板之距離接近而導致熔融之金屬凸塊被擠壓，橫向寬度變寬，相鄰之熔融部分彼此接觸短路。
本實施形態提供一種半導體裝置之製造裝置及半導體裝置之製造方法，能於在半導體元件與基板之間使金屬凸塊熔融而電性連接於金屬墊之步驟中，抑制相鄰之金屬凸塊間之短路之產生。
本實施形態之半導體裝置之製造裝置具備：載物台；頭部，其與上述載物台對向；驅動部，其使上述頭部移動；荷重感測器，其檢測移動方向之荷重；位置感測器，其檢測上述驅動部之上述移動方向之位置；加熱機構，其將上述頭部進行加熱；及控制部，其控制上述驅動部及上述加熱機構；上述控制部使上述頭部藉由上述驅動部移動而接近上述載物台，並以由上述荷重感測器測得之荷重值成為目標值之方式進行荷重控制，其後，藉由上述加熱機構使上述頭部之溫度上升，並以藉由上述驅動部使上述頭部離開上述載物台之方式進行位置控制，其後，停止利用上述加熱機構之加熱，並以藉由上述驅動部使上述頭部接近上述載物台之方式進行位置控制。
1‧‧‧半導體裝置之製造裝置
2‧‧‧載物台
3‧‧‧頭部
4‧‧‧支持部
5‧‧‧基板
5a‧‧‧焊料凸塊(金屬凸塊)
6‧‧‧載物台加熱器
7‧‧‧溫度感測器
8‧‧‧接合工具
9‧‧‧半導體元件
9a‧‧‧為金屬墊
10‧‧‧頭加熱器
11‧‧‧溫度感測器
12‧‧‧冷卻孔
13‧‧‧驅動部
14‧‧‧位置感測器
15‧‧‧荷重感測器
16‧‧‧控制裝置
A0‧‧‧頭部3之高度尺寸
A1‧‧‧頭部3之高度尺寸
A2‧‧‧頭部3之高度尺寸
B0‧‧‧載物台2之高度尺寸
B1‧‧‧載物台2之高度尺寸
d‧‧‧距離
圖1係表示實施形態之半導體裝置之製造裝置之概略構成圖。
圖2係表示製造步驟之流程之圖。
圖3(a)~(c)係表示半導體裝置於加工前之狀態及加工後之狀態之模式性剖視圖。
圖4、5、6(a)~(b)、7、8係以製造步驟之各階段表示之模式性縱剖視圖。
圖9及圖10係表示各部分之狀態之變化量之時間推移之圖。
圖11係表示頭部之延伸量伴隨溫度變化之推移之圖。
以下，參照圖1至圖11對實施形態進行說明。另外，圖式為模式性圖式，厚度與平面尺寸之關係、各層厚度之比率等不一定與現實中一致。而且，上下左右之方向亦僅表示以下述半導體基板中之電路形成面側為上或下時之相對方向，不一定與以重力加速度方向為基準之方向一致。
圖1表示半導體裝置之製造裝置1(以下，亦稱為「製造裝置1」)之概略構成。於圖示之狀態中，顯示為分開之獨立個體之構成，但實際上係以利用未圖示之外殼構成部使整體成為一體構成之方式設置。於製造裝置1之下方設置有使用了陶瓷等之載物台2。於載物台2之上部設置有頭部3及支持該頭部3使其能上下移動之支持部4。再者，於以下說明中，將上下方向稱為Z軸方向，將水平方向稱為XY軸方向。
載物台2於上表面保持如圖3(b)所示之陶瓷基板或玻璃環氧基板等半導體元件安裝用之基板5。為了將保持於上表面之基板5加熱至特定溫度，載物台2於內部設置有載物台加熱器6及用以監控其溫度之溫度感測器7。關於利用載物台加熱器6對載物台2進行之加熱，例如以於較熔點低之固定溫度(例如150℃)下對圖2所示之形成於基板5之金屬凸塊即焊料凸塊5a進行加熱之方式，一面利用溫度感測器7監控一面進行通電控制。
頭部3於下表面部分配置有接合工具8，並設置成能吸附保持如圖3(a)所示之半導體元件等半導體元件9。於頭部3設置有頭加熱器10及溫度感測器11，該頭加熱器10用以對由接合工具8保持之半導體元件9進行加熱，該溫度感測器11用以監控頭加熱器10之溫度。又，頭部3中，形成有用以使冷卻用之高壓空氣等在內部流通之冷卻孔12。
頭加熱器10可藉由使電流流通而發熱從而於頭部3之加熱中使溫度迅速上升，具備作為脈衝加熱器之功能。藉此，可使由接合工具8 吸附保持之半導體元件9之溫度迅速上升。又，停止加熱時，能阻斷流向頭加熱器10之電流，進而藉由使冷卻用之高壓空氣於冷卻孔12流通而使頭部3之溫度迅速降低。
於支持部4設置有用以使頭部3沿Z軸方向(上下方向)移動之驅動部13，並設置有用以檢測驅動部13之位置的位置感測器14。此外，於支持部4設置有荷重感測器15，該荷重感測器15檢測使頭部3下降而與載物台2接觸時之對載物台2之荷重值。藉此，於藉由驅動部13控制頭部3在Z軸方向之移動之情形時，可藉由監控位置感測器14而控制在Z軸方向之位置。進而，可藉由利用荷重感測器15監控對頭部3之荷重之程度，而控制在檢測出之荷重值大小下之頭部3之位置。
控制裝置16具備CPU(Central Processing Unit，中央處理器)或存儲器等，且按照程式對裝置整體進行控制。控制裝置16按照下述程式控制上述載物台2、頭部3、支持部4等各部分之移動。又，雖未圖示，但構成為：於將基板5安裝於載物台2且將半導體元件9安裝於頭部3之接合工具8之狀態下，設置用以識別基板5及半導體元件9在XY軸方向(水平方向)上之位置的位置識別相機，並藉由控制裝置16於XY方向及水平面內之旋轉方向上控制基板5及半導體元件9之移動，使其等位於準確之連接位置。
其次，對藉由上述構成之製造裝置1實施之半導體裝置之製造步驟進行說明。圖3(a)表示上述半導體元件9之模式性截面，於矽基板等半導體基板之表面部經由各種加工步驟而製作成包含半導體元件之積體電路。於該半導體元件9之表面(上表面)，形成有複數個用以與外部電性連接之金屬電極即金屬墊9a。
另一方面，圖3(b)表示基板5之模式性截面。基板5例如由陶瓷等形成，於表面(上表面)形成有用以與半導體元件9之金屬墊9a電性連接之電極圖案，且於該連接部分形成有焊料凸塊5a作為金屬凸塊。 又，於基板5之正面或背面配置形成有於安裝有半導體元件9之狀態下用以與外部電路連接之各種端子部等。於此情形時，基板5於背面形成端子部時，以介隔基板5之內部而於背面側連接配線用之導體之方式設置。
圖3(c)表示將半導體元件9安裝於上述基板5之狀態之模式性截面。基板5之焊料凸塊5a於安裝狀態下，如圖所示般成為作為於熔融後加壓而被擠壓之狀態之焊料5b與半導體元件9之金屬墊9a電性連接之狀態。又，於該狀態下，半導體元件9於安裝於基板5之狀態下，被安裝成兩者間例如隔開距離d之狀態，藉此，形成為如下狀態：安裝時焊料凸塊5a不會被過度擠壓，而不會有相鄰之焊料凸塊5a彼此接觸而導致焊料5b彼此短路之情況。
其次，參照圖2及圖4~圖11對藉由製造裝置1將半導體元件9安裝至基板5之步驟進行說明。
圖2係概略性地表示利用製造裝置1之控制裝置16進行安裝步驟之控制動作之步驟流程圖。以下，按照該圖2之流程圖對該步驟進行說明。又，圖9表示頭部3伴隨著一系列步驟之動作流程之溫度推移、荷重值推移、及高度推移。
在具體動作中，首先，如圖4所示般於開始時點將製造裝置1之頭部3配置於與載物台2隔開之位置。首先，將半導體元件9配置於頭部3之接合工具8，並藉由控制裝置16之控制利用抽吸等方法使半導體元件9保持於接合工具8(圖2中S1)。其次，將基板5配置於載物台2之上表面，並藉由控制裝置16之控制利用抽吸等方法使基板5保持於載物台2之上表面(圖2中S2)。
其次，藉由控制裝置16使位置識別相機***配置於載物台2與頭部3之間之空間區域，並拍攝位於Z軸方向上下之基板5及半導體元件9而識別二者之位置。此後，藉由使載物台2或頭部3沿著XY軸方向(水 平方向)及水平面內之旋轉方向相對移動，而以安裝於載物台2之基板5之焊料凸塊5a與安裝於頭部3之接合工具8之半導體元件9之金屬墊9a之位置成為對向狀態之方式進行調整，從而使位置對準(圖2中S3)。
繼而，藉由控制裝置16使頭部3下降並以接近載物台2之方式移動。此時，於基於位置感測器14之檢測信號進行Z軸方向之移動之情況下，可利用控制裝置16，藉由預先設定基板5之焊料凸塊5a即將與半導體元件9之金屬墊9a接觸之前之高度而迅速進行移動控制。
藉此，如圖5所示般將頭部3移動控制至接近載物台2之位置。此後，藉由控制裝置16，基於荷重感測器15之檢測信號控制頭部3之下降。進行該控制直至檢測出焊料凸塊5a與金屬墊9a接觸(頭部3接地於載物台2)時產生之荷重成為閾值荷重(圖2中S4)。
再者，如上所述之頭部3之下降之控制亦可不使用位置感測器14而基於荷重感測器15之檢測信號進行。即，亦可藉由控制裝置16，使頭部3以固定速度沿Z軸方向下降，並監控荷重感測器15之檢測荷重，於金屬墊9a接觸焊料凸塊5a導致荷重值達到閾值荷重之時點停止移動。
若因頭部3之下降而使焊料凸塊5a與金屬墊9a成為接觸狀態(頭部3接地於載物台2之狀態)，則此後利用控制裝置16一面監控荷重感測器15一面使頭部3進一步下降，藉由以此種方式進行控制而利用頭部3對載物台2加壓從而達到指定加壓值(圖2中S5、圖9中時刻t1)。藉此，成為將頭部3側之半導體元件9之金屬墊9a壓抵於載物台2側之基板5之焊料凸塊5a的狀態，焊料凸塊5a壓縮變形，在二者接觸之表面產生之自然氧化膜破裂，可確保導通狀態。
此時，若例如圖5所示般將未加壓之狀態下之頭部3之高度尺寸設為A0，將載物台2之高度尺寸設為B0，則藉由進行加壓動作，如圖6(a)所示，成為如下狀態：頭部3之高度尺寸被壓縮成較A0小之A1(< A0)，載物台2之高度尺寸被壓縮成較B0小之B1(<B0)。
再者，當如此進行加壓動作時，如上所述般頭部3及載物台2均成為壓縮狀態，高度尺寸變小至A1、B1。於該狀態下，若利用頭部3之加熱器10進行加熱動作，則基板5之焊料凸塊5a通過接合工具8及半導體元件9之金屬墊9a而被加熱，藉此成為熔融狀態。
其結果，對成為壓縮狀態之頭部3及載物台2之壓力被解除，恢復為原本之高度尺寸A0及B0。頭部3進一步因加熱而膨脹，因此變化成較原本之高度尺寸A0大之A2。因此時之頭部3及載物台2之變形而有如圖6(b)所示般焊料凸塊5a被過度擠壓之情況，藉此，預測到相鄰之焊料凸塊5a彼此成為接觸狀態而導致電性短路之不良情況。
因此，於本實施形態中，在進行加壓控制之後，藉由利用控制裝置16使頭部3上升而進行減壓控制(圖2中S6、圖9中時刻t2)。於此情形時，一面監控荷重感測器15之檢測信號一面使頭部3上升(Z軸方向之移動)而減壓，並於保持焊料凸塊5a與金屬墊9a之接觸狀態之狀態(由荷重感測器15測得之檢測荷重成為特定等級之狀態)下停止上升。
再者，此種控制亦於圖10中示出。圖10中，利用虛線表示頭部3之高度，並利用左側之刻度表示數值。又，利用實線表示荷重感測器15之檢測荷重值(N)，並利用右側之刻度表示數值。再者，時間(sec)之推移為相對推移，此處以進行加壓動作之情形時之一例表示。
於該控制中，當開始動作時，藉由控制裝置16使頭部3下降。此後，當頭部3側之半導體元件9之金屬墊9a與載物台2側之基板5之焊料凸塊5a接觸而導致荷重感測器15之檢測荷重值開始上升時，控制裝置16進一步對頭部3進行下降控制。而且，控制裝置16以荷重值成為特定等級例如100N左右之方式對頭部3進行下降控制而加壓。此時，由位置感測器14檢測出之頭部3在Z軸方向之位移量之值例如為0.246mm。
控制裝置16將頭部3以加壓狀態保持特定時間，其後，藉由對頭部3進行上升控制而減壓，當荷重值下降至例如10N時，於該位置停止頭部3之上升並保持。於該狀態下，荷重值為特定值即10N，並保持為焊料凸塊5a與金屬墊9a接觸之狀態。此時，由位置感測器14檢測出之頭部3在Z軸方向之位移量之值為0.265mm。因此，可知因減壓引起之Z軸方向之位移量為0.019mm(19μm)。該變化量19μm成為對頭部3施加指定加壓值之壓力時之頭部3與載物台2之壓縮變形量。
其結果，藉由實施頭部3之減壓控制(S6)，可改善產生於上述減壓時之相當於位移量19μm之壓縮變形。圖8表示進行減壓控制之狀態下之情況。即，藉由對因加壓控制而壓縮變形之頭部3進行減壓控制，可大致恢復為加壓前之高度尺寸A0。
其次，藉由控制裝置16開始頭部3之加熱控制(圖2中S7、圖9中時刻t3)。於此情形時，當實施加熱控制時，伴隨著溫度上升，頭部3之高度尺寸因熱膨脹而自A0變形為較A0長之尺寸。圖11係表示頭部3之伴隨著溫度上升之高度尺寸變化量之曲線圖之一例。
圖11中，例如，對縱軸取頭部3在Z軸方向之變化量，對橫軸取頭部3之溫度。此處，以頭部3之溫度為175℃時在Z軸方向之變化量為基準而設為「0」。藉此，可知頭部3之溫度為240℃時，變化量成為8.0μm，頭部3之溫度為310℃時，變化量成為18.6μm。即，藉由對頭部3進行加熱控制，Z軸方向之變化量因熱膨脹而增加。
然而，在由該熱膨脹引起之頭部3之延伸不反映在機械性之頭部3之Z軸位置控制上的情形時，伴隨著頭部3之加熱控制，頭部3之前端Z位置即半導體元件9之金屬墊9a之高度向載物台2側靠近與變化量相同之距離，擠壓焊料凸塊5a。
另一方面，由於同樣之原因，於停止頭部3之加熱控制而使頭部3冷卻之情形時，頭部3僅收縮因上述熱膨脹引起之變化量之量，因 此，此時頭部3下端部之位置朝上方被提拉，金屬墊9a上升時，以拉伸因冷卻而固化之焊料凸塊5a之方式作用而施加拉伸應力。
因此，於本實施形態中，以吸收因如上所述之加熱控制及冷卻引起之頭部3之變化量的方式控制頭部3之位置。首先，於開始頭部3之加熱控制(圖9中為時刻t3)而對頭加熱器10開始通電時，控制裝置16以假定因熱膨脹而變化之量而使頭部3之高度上升之方式進行控制(圖2中S8)。於此情形時，頭部3之溫度推移與因熱膨脹引起之在Z軸方向之變化量不一定一致。熱膨脹有與時間經過一併線性增加之傾向，因此如圖9所示，頭部3之Z軸方向之位置控制亦結合該情況進行。
藉此，位於頭部3下端部之半導體元件9之金屬墊9a與載物台2側之基板5之焊料凸塊5a的距離保持為保持大致相同之距離之狀態。因此，可避免因相鄰之焊料凸塊5a彼此接觸而成為短路狀態之事態。
其次，控制裝置16於藉由進行一定時間之加熱控制使焊料凸塊5a成為充分熔融之狀態而改善焊料凸塊5a與金屬墊9a之親和後，停止對頭加熱器10之通電而停止頭部3之加熱(圖2中S9、圖9中時刻t4)。又，此時，控制裝置16藉由使冷卻用之空氣通過冷卻孔12流通而加速放熱，從而對頭部3進行強制冷卻。
藉此，頭部3之溫度迅速降低。而且，伴隨著該冷卻，控制裝置16以假定因冷卻而變化之量而使頭部3之高度下降(壓入)之方式進行控制(圖2中S10)。於此情形時，能大致同時地開始冷卻及控制頭部3之下降。又，可於開始冷卻頭部3後進行頭部3之下降控制，亦可相反地以於開始控制頭部之下降後開始冷卻頭部之方式進行控制。
藉此，位於頭部3下端部之半導體元件9之金屬墊9a與載物台2側之基板5之焊料凸塊5a的距離保持為保持大致相同之距離之狀態。因此，可抑制如下情況：金屬墊9a上升時，以拉伸因冷卻而固化之焊料凸塊5a之方式作用而導致施加拉伸應力。
如此一來，當頭部3之冷卻進展時，焊料凸塊5a凝固而成為與金屬墊9a電性結合之狀態。此時，藉由以上述方式實施頭部3之Z軸方向之位置控制(圖2中S6~S10)，可形成保持大致固定之距離d之狀態。於該狀態下，控制裝置16以在一定時間內保持該狀態之方式待機(圖9中時刻t5至特定時間之期間)。
最後，藉由控制裝置16，解除利用頭部3之接合工具8形成之半導體元件9的吸附狀態，使頭部3上升，藉此將半導體元件9自藉由頭部3之保持中分離(圖2中S11)而結束步驟。如圖3(c)所示，於載物台2上成為殘留有基板5之狀態，其中半導體元件9之金屬墊9a以保有特定距離d之狀態連接於焊料凸塊5b，而可自載物台2卸除經連接之半導體裝置。
根據上述實施形態，於將半導體元件9之金屬墊9a結合於基板5之焊料凸塊5a之步驟中，並非在藉由頭部3之加壓動作使頭部3及載物台2壓縮變形之狀態下進行加熱，而是在加壓動作(S5)後實施減壓動作(S6)，可使因加壓造成之頭部3及載物台2之壓縮變形恢復為壓縮前之形狀，於利用頭部3之加熱控制使焊料凸塊5a熔融時，可抑制由於因壓縮變形解除所導致的擴散而產生之變形，可防止相鄰之焊料凸塊5a彼此接觸，而可為不產生短路不良之步驟。
又，於頭部3之加熱控制中，以考慮到頭部3之因加熱引起之延伸量而吸收頭部3在Z軸方向之位移值之方式上升，藉由以此種方式進行控制，可抑制因由頭部3之加熱引起的熱膨脹而導致相鄰之焊料凸塊5a彼此短路。
又，於頭部3之冷卻中，以考慮到頭部3之因冷卻引起之收縮量而吸收該變化之方式使頭部3在Z軸方向之位置下降，由於以此種方式進行控制，因此能夠不因由頭部3之冷卻所引起的收縮而導致於焊料凸塊5a與金屬墊9a之結合部產生由拉伸應力造成之破裂。
(其他實施形態)
除上述實施形態中說明之情況以外，可應用於如下變化形態。
於上述實施形態中，只要為形成有相當於焊料凸塊5a之金屬凸塊或金屬球之基板即可。
又，於金屬凸塊設置於半導體元件9側之情形時亦可實施。可應用於在基板5及半導體元件9的任一者設置有金屬墊、在另一者設置有金屬凸塊之構成。
亦可不實施藉由將冷卻用空氣流通於冷卻孔而進行之強制冷卻。
於上述實施形態中，例示了藉由控制裝置16，於實施加熱控制前實施加壓及減壓之控制之情況，但並不限於此，例如，於能確保連接之二者之表面部未形成自然氧化膜之狀態的情形時，亦可不進行加壓及減壓之控制而直接實施加熱控制。
對本發明之若干個實施形態進行了說明，但該等實施形態係作為例子進行提示，並不意圖限定發明之範圍。該等新穎之實施形態能以其他各種方式實施，能於不脫離發明主旨之範圍內進行各種省略、替換、變更。該等實施形態或其變化包含於發明之範圍或主旨，且包含於申請專利範圍所記載之發明及其均等之範圍。
1‧‧‧半導體裝置之製造裝置
2‧‧‧載物台
3‧‧‧頭部
4‧‧‧支持部
6‧‧‧載物台加熱器
7‧‧‧溫度感測器
8‧‧‧接合工具
10‧‧‧頭加熱器
11‧‧‧溫度感測器
12‧‧‧冷卻孔
13‧‧‧驅動部
14‧‧‧位置感測器
15‧‧‧荷重感測器
16‧‧‧控制裝置

Claims (5)

  1. 一種半導體裝置之製造裝置，其包含：載物台；頭部，其與上述載物台對向；驅動部，其使上述頭部移動；荷重感測器，其檢測上述頭部之移動方向之荷重；位置感測器，其檢測在上述移動方向上之上述頭部之位置；加熱機構，其對上述頭部進行加熱；及控制部，其控制上述驅動部及上述加熱機構；上述控制部係：藉由上述驅動部使上述頭部移動而接近上述載物台，且以由上述荷重感測器測得之荷重值成為預先設定之目標值之方式進行上述頭部之荷重控制，在上述荷重值設定為目標值之狀態下，藉由上述位置感測器而檢測上述頭部之位置，以使經檢測之上述頭部之位置成為預先設定之高度之方式，進一步一邊進行上述驅動部之荷重控制，一邊進行上述頭部之位置控制，其後，藉由上述加熱機構使上述頭部之溫度上升，且以藉由上述驅動部使上述頭部離開上述載物台之方式進行位置控制，且其後，停止利用上述加熱機構之加熱，且以藉由上述驅動部使上述頭部接近上述載物台之方式進行位置控制。
  2. 如請求項1之半導體裝置之製造裝置，其中於上述頭部安裝有半導體元件，於上述載物台安裝有基板，於上述半導體元件及上述基板之任一者設置有金屬凸塊，於 另一者設置有金屬電極，且藉由上述控制部之控制，對上述頭部進行移動控制，並熔融上述金屬凸塊而將上述半導體元件及上述基板電性連接於上述金屬電極。
  3. 如請求項2之半導體裝置之製造裝置，其中上述頭部具備溫度感測器，且上述控制部於藉由上述加熱機構使上述頭部之溫度上升後，在由上述溫度感測器測得之檢測溫度達到上述金屬凸塊之金屬熔點後，以藉由上述驅動部使上述頭部離開上述載物台之方式開始位置控制。
  4. 如請求項1之半導體裝置之製造裝置，其中上述頭部包含冷卻機構，且上述控制部於停止利用上述加熱機構之加熱後，藉由上述冷卻機構進行上述頭部之冷卻。
  5. 一種半導體裝置之製造方法，其將半導體元件安裝於頭部，將基板安裝於載物台，並藉由控制部對上述頭部進行移動控制，而將設置於半導體元件及基板之任一者之金屬凸塊與設置於另一者之金屬電極電性連接，且藉由上述控制部，使上述頭部與上述載物台接近，以移動方向之荷重值成為預先設定之目標值之方式進行上述頭部之荷重控制，在上述荷重值設定為目標值之狀態下，以使上述頭部之位置成為預先設定之高度之方式，進一步一邊進行驅動部之荷重控制，一邊進行上述頭部之位置控制，使上述頭部之溫度上升而使上述金屬凸塊熔融， 以上述頭部離開上述載物台之方式進行位置控制，停止對上述頭部之加熱且以上述頭部接近上述載物台之方式進行位置控制，且將上述金屬凸塊與上述金屬電極電性連接。
TW104106386A 2014-09-16 2015-02-26 A manufacturing apparatus for a semiconductor device and a method for manufacturing the semiconductor device TWI576942B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014187678A JP2016062960A (ja) 2014-09-16 2014-09-16 半導体装置の製造装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201613010A TW201613010A (en) 2016-04-01
TWI576942B true TWI576942B (zh) 2017-04-01

Family

ID=55455498

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104106386A TWI576942B (zh) 2014-09-16 2015-02-26 A manufacturing apparatus for a semiconductor device and a method for manufacturing the semiconductor device

Country Status (4)

Country Link
US (1) US10090273B2 (zh)
JP (1) JP2016062960A (zh)
CN (1) CN105990186B (zh)
TW (1) TWI576942B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847313B2 (en) * 2015-04-24 2017-12-19 Kulicke And Soffa Industries, Inc. Thermocompression bonders, methods of operating thermocompression bonders, and horizontal scrub motions in thermocompression bonding
JP6581389B2 (ja) * 2015-05-12 2019-09-25 東芝メモリ株式会社 半導体装置の製造装置及び製造方法
CN106670612A (zh) * 2016-12-14 2017-05-17 广州瑞立科密汽车电子股份有限公司 挂车abs控制器的焊接自动控制***及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200605246A (en) * 2004-06-08 2006-02-01 Matsushita Electric Ind Co Ltd Component mounting method and component mounting apparatus
US20130181037A1 (en) * 2010-06-30 2013-07-18 Shinkawa Ltd. Electronic component mounting apparatus and the same method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409725B2 (ja) 1999-02-25 2003-05-26 三菱電機株式会社 ボンディング装置
TW559963B (en) 2001-06-08 2003-11-01 Shibaura Mechatronics Corp Pressuring apparatus of electronic device and its method
US7296727B2 (en) * 2001-06-27 2007-11-20 Matsushita Electric Industrial Co., Ltd. Apparatus and method for mounting electronic components
JP5009738B2 (ja) 2007-10-16 2012-08-22 パナソニック株式会社 加圧装置および加圧方法
JP2011124411A (ja) 2009-12-11 2011-06-23 Nec Corp 電子部品実装方法および電子部品実装装置
JP4880055B2 (ja) * 2010-06-04 2012-02-22 株式会社新川 電子部品実装装置及びその方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200605246A (en) * 2004-06-08 2006-02-01 Matsushita Electric Ind Co Ltd Component mounting method and component mounting apparatus
US20130181037A1 (en) * 2010-06-30 2013-07-18 Shinkawa Ltd. Electronic component mounting apparatus and the same method thereof

Also Published As

Publication number Publication date
US20160079200A1 (en) 2016-03-17
TW201613010A (en) 2016-04-01
CN105990186A (zh) 2016-10-05
JP2016062960A (ja) 2016-04-25
CN105990186B (zh) 2019-07-12
US10090273B2 (en) 2018-10-02

Similar Documents

Publication Publication Date Title
TWI603405B (zh) Manufacturing apparatus of semiconductor device and manufacturing method of semiconductor device
TWI576942B (zh) A manufacturing apparatus for a semiconductor device and a method for manufacturing the semiconductor device
KR20230008888A (ko) 실장 장치 및 실장 방법
JP6639915B2 (ja) 半導体実装装置および半導体実装方法
TW201521130A (zh) 銅球接合介面結構及形成
JPH09153525A (ja) ボンディング装置およびボンディング方法
JP6325053B2 (ja) 接合システム、接合方法、および半導体デバイスの製造方法
JP5964520B2 (ja) 電子部品接合装置および電子部品接合方法
JP6083041B2 (ja) 接合方法、接合システム、および半導体デバイスの製造方法
JP5533480B2 (ja) 電子部品の実装装置及び実装方法
JP2010129771A (ja) 半導体チップのボンディング装置及びボンディング方法
KR101831389B1 (ko) 실장장치 및 실장방법
JP7320886B2 (ja) 半導体装置の製造装置および製造方法
JP6577764B2 (ja) 加圧加熱冷却装置及びフリップチップ実装装置並びにフリップチップ実装方法及び半導体装置の製造方法
JP4732894B2 (ja) ボンディング方法及びボンディング装置
JP6345819B2 (ja) チップ実装装置
JP4924480B2 (ja) 半導体装置の製造方法および装置
JP5768677B2 (ja) バンプ接合構造体の製造方法
JP2009158563A (ja) 実装装置および実装方法
JP2018129552A (ja) チップ実装装置
JP2005191460A (ja) 半導体装置の製造方法及び半導体装置の製造装置
JP2006202897A (ja) 半導体装置の製造方法