TWI566296B - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
- Publication number
- TWI566296B TWI566296B TW101109355A TW101109355A TWI566296B TW I566296 B TWI566296 B TW I566296B TW 101109355 A TW101109355 A TW 101109355A TW 101109355 A TW101109355 A TW 101109355A TW I566296 B TWI566296 B TW I566296B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- mounting table
- heat transfer
- plasma
- focus ring
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 61
- 150000002500 ions Chemical class 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 7
- 239000002002 slurry Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 208000033641 Ring chromosome 5 syndrome Diseases 0.000 description 93
- 235000012431 wafers Nutrition 0.000 description 86
- 229920000642 polymer Polymers 0.000 description 26
- 238000001020 plasma etching Methods 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 15
- 238000009832 plasma treatment Methods 0.000 description 11
- 239000012212 insulator Substances 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 10
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 208000035475 disorder Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Description
本發明係關於一種對於例如半導體晶圓或FPD(平板顯示器)用的玻璃基板等的基板進行電漿處理之技術。 The present invention relates to a technique of performing plasma treatment on a substrate such as a semiconductor wafer or a glass substrate for an FPD (flat panel display).
在半導體晶圓或FPD製造用的玻璃基板之半導體基板的製程中，有對基板施以蝕刻處理或成膜處理等預定的電漿處理之步驟。在進行此等步驟的電漿處理裝置方面，係將基板載置於真空室內的載置台上，於此載置台上方的空間內使處理氣體電漿化，對於前述基板進行電漿處理。此外，如圖15(a)所示，在載置台11上的基板，例如半導體晶圓W(以下稱為「晶圓W」)的周圍，為了將電漿封閉於晶圓W上，並且緩和晶圓W面內的偏壓電位的不連續性而進行面內均勻的處理，設有由例如矽等的導電性構件構成的環狀聚焦環12。 In the process of a semiconductor substrate of a semiconductor wafer or a glass substrate for FPD manufacturing, there is a step of subjecting the substrate to a predetermined plasma treatment such as an etching treatment or a film formation treatment. In the plasma processing apparatus for performing the above steps, the substrate is placed on a mounting table in the vacuum chamber, and the processing gas is plasma-formed in the space above the mounting table, and the substrate is subjected to plasma treatment. Further, as shown in FIG. 15(a), on the substrate on the mounting table 11, for example, a semiconductor wafer W (hereinafter referred to as "wafer W"), the plasma is sealed on the wafer W, and the substrate is tempered. The in-plane uniform processing is performed by the discontinuity of the bias potential in the wafer W surface, and an annular focus ring 12 made of a conductive member such as tantalum is provided.
未圖示的調溫流路設於前述載置台11上，藉由來自電漿的輸入熱與對載置台11的散熱之平衡，在將晶圓W調整為預定溫度的狀態下，進行電漿處理。另一方面，聚焦環12因在熱性浮起的狀態下曝露於電漿中，而成為溫度高於晶圓W的狀態。且說自由基種或反應副生成物會附著於低溫的部位而形成聚合物(堆積物)，但如已經敘述，由於晶圓W較聚焦環12為低溫，所以容易將聚合物13形成於晶圓W之邊緣部。此聚合物13雖可藉由電漿離子的濺射去除，但電漿照射不到形成於晶圓W背面的聚合物13，無法期待此濺射的去除。 A temperature-adjusting flow path (not shown) is provided on the mounting table 11, and the plasma is adjusted to a predetermined temperature in a state where the wafer W is adjusted to a predetermined temperature by a balance between the input heat from the plasma and the heat radiation to the mounting table 11. deal with. On the other hand, the focus ring 12 is exposed to the plasma in a state of being thermally heated, and becomes a state in which the temperature is higher than the wafer W. It is said that a radical species or a reaction by-product is attached to a low temperature portion to form a polymer (stack), but as already described, since the wafer W is lower than the focus ring 12, it is easy to form the polymer 13 on the wafer. The edge of W. Although the polymer 13 can be removed by sputtering of plasma ions, the plasma does not irradiate the polymer 13 formed on the back surface of the wafer W, and the removal of the sputtering cannot be expected.
作為去除前述聚合物的手法，專利文獻1及專利文獻2中提出了藉由在聚焦環之下***絕緣物來控制晶圓W與聚焦環 間的電位差之構造。在此構造方面，如圖15(b)所示，利用絕緣物14來調整晶圓W與聚焦環12之間的電位差，改變射入而來的電漿離子的軌道，將電漿離子引導到晶圓W背面，如此利用濺射去除前述聚合物13。 As a method of removing the aforementioned polymer, Patent Document 1 and Patent Document 2 propose to control the wafer W and the focus ring by inserting an insulator under the focus ring. The construction of the potential difference between the two. In this configuration, as shown in FIG. 15(b), the potential difference between the wafer W and the focus ring 12 is adjusted by the insulator 14, and the orbit of the plasma ions that are incident is changed to guide the plasma ions to The back surface of the wafer W is thus removed by sputtering to remove the aforementioned polymer 13.
藉由此等構造，雖然可以去除附著於晶圓W背面的聚合物，但因無法控制聚焦環12的溫度，故無法抑制聚合物對晶圓W背面周緣部的附著本身。此外，也會設想隨著條件而無法完全去除附著於晶圓W上的聚合物。此情況，雖然在後續步驟中要進行以例如分批清洗等剝離聚合物，但有經由清洗液而附著於裝置表面，成為缺陷的原因之虞。再者，於對一批晶圓W進行處理之間，聚焦環12的溫度會因電漿的照射而上升，隨著此溫度變化，繞到晶圓W背面側的電漿離子的軌道會變化，也有無法進行穩定的聚合物去除之擔心。 With such a structure, the polymer adhering to the back surface of the wafer W can be removed, but since the temperature of the focus ring 12 cannot be controlled, the adhesion of the polymer to the peripheral edge portion of the back surface of the wafer W cannot be suppressed. In addition, it is also conceivable that the polymer attached to the wafer W cannot be completely removed depending on the conditions. In this case, in the subsequent step, the polymer is peeled off by, for example, batch cleaning, but it may adhere to the surface of the device via the cleaning liquid, which may cause defects. Furthermore, between the processing of a batch of wafers W, the temperature of the focus ring 12 rises due to the irradiation of the plasma, and as the temperature changes, the orbit of the plasma ions wound around the back side of the wafer W changes. There are also concerns that stable polymer removal cannot be performed.
此外，專利文獻3中提出了藉由將第1熱傳達媒體與介電環及第2熱傳達媒體與絕緣構件於上下方向層積而設於聚焦環與電極塊之間來抑制堆積物附著於晶圓斜面部之技術。在此構造方面，係藉由利用介電環抑制施加於形成於聚焦環前面的鞘之電壓來抑制熱輸入到聚焦環，並且利用第1及第2熱傳達媒體將來自聚焦環的熱傳到電極塊。如此一來，較晶圓降低聚焦環的溫度，抑制了堆積物附著於晶圓斜面部。 Further, Patent Document 3 proposes to prevent deposition of deposits by stacking the first heat transfer medium, the dielectric ring, the second heat transfer medium, and the insulating member in the vertical direction between the focus ring and the electrode block. Wafer ramp technology. In this configuration, the heat input to the focus ring is suppressed by suppressing the voltage applied to the sheath formed in front of the focus ring by the dielectric ring, and the heat from the focus ring is transmitted to the focus ring by the first and second heat transfer media. Electrode block. As a result, the temperature of the focus ring is lowered by the wafer, and the deposit is prevented from adhering to the wafer bevel.
此處，若以絕緣體與熱傳導體為積層構造，則氣泡容易混入熱傳導體與絕緣體的接觸面，但絕緣體與聚焦環之間的接觸狀態卻會因此氣泡的存在而變化，要在聚焦環的面內均勻地傳熱成為困難。此外，為了附著於晶圓背面側的聚合物之濺射去除藉由晶圓之邊緣部分與聚焦環之間的電位差來實現，而要求設於聚焦環下方的絕緣體所進行的微妙阻抗控制，但因絕緣體與聚焦環之間的氣泡存在而兩者的接觸狀態也有隨著變化而 對前述阻抗控制也帶來不良影響之虞。再者，若以絕緣體與熱傳導體為積層構造，則熱傳導體會變形或氣泡會混入熱傳導體與絕緣體之間，聚焦環之周緣部容易向下方側傾斜，聚焦環的高度管理成為困難，晶圓周緣的電漿狀態的控制就變得不穩定了。 Here, when the insulator and the heat conductor are laminated, the bubbles are likely to be mixed into the contact surface between the heat conductor and the insulator, but the contact state between the insulator and the focus ring changes due to the presence of the bubble, and is on the surface of the focus ring. Uniform heat transfer within the interior becomes difficult. Further, the sputtering removal of the polymer attached to the back side of the wafer is achieved by the potential difference between the edge portion of the wafer and the focus ring, and the subtle impedance control by the insulator provided under the focus ring is required, but Due to the presence of bubbles between the insulator and the focus ring, the contact state of the two also changes with It also has an adverse effect on the aforementioned impedance control. In addition, when the insulator and the heat conductor are laminated, the heat conductor is deformed or bubbles are mixed between the heat conductor and the insulator, and the peripheral portion of the focus ring is easily inclined downward, and the height management of the focus ring becomes difficult. The control of the plasma state becomes unstable.
【專利文獻1】日本特開2005-277369號公報(圖1、圖2) [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-277369 (Fig. 1, Fig. 2)
【專利文獻2】日本特開2007-250967號公報(圖1、圖2) [Patent Document 2] Japanese Laid-Open Patent Publication No. 2007-250967 (Fig. 1, Fig. 2)
【專利文獻3】日本特開2007-258500號公報(圖1、段落0030~0035) [Patent Document 3] Japanese Laid-Open Patent Publication No. 2007-258500 (Fig. 1, paragraphs 0030 to 0035)
本發明係於此種情況之下所完成，其目的在於提供一種藉由控制環狀構件的溫度來抑制堆積物對基板背面的附著量之技術。 The present invention has been accomplished under such circumstances, and an object thereof is to provide a technique for suppressing the amount of deposition of deposits on the back surface of a substrate by controlling the temperature of the annular member.
因此，本發明之電漿處理裝置，係在設於真空容器內的兼作下部電極用的載置台之基板載置區域上載置基板，並且在前述下部電極與上部電極之間施加高頻電力而使處理氣體電漿化，對基板施以電漿處理之電漿處理裝置，其特徵在於具備：環狀構件，其係以包圍前述基板載置區域的方式設於前述載置台上，用以調整電漿的狀態；絕緣構件，其係在前述載置台的上面與前述環狀構件的下面之間，沿著該環狀構件，對於前述載置台上的基板中心設置成同心圓狀，用以調整該環狀構件與基板的電位差，以便將電 漿中的離子引進到基板的背面側；及傳熱構件，其係對於此絕緣構件在鄰接於基板徑向的位置且前述載置台的上面與前述環狀構件的下面之間，密接於該上面及下面且沿著該環狀構件設置。 Therefore, in the plasma processing apparatus of the present invention, the substrate is placed on the substrate mounting region which is also used as the mounting table for the lower electrode in the vacuum container, and high-frequency power is applied between the lower electrode and the upper electrode. A plasma processing apparatus for plasma-treating a processing gas and applying a plasma treatment to a substrate, comprising: an annular member provided on the mounting table so as to surround the substrate mounting region for adjusting electric power a state of the slurry; the insulating member is disposed between the upper surface of the mounting table and the lower surface of the annular member, and the annular member is disposed concentrically with respect to the center of the substrate on the mounting table for adjusting the a potential difference between the ring member and the substrate to electrically The ions in the slurry are introduced to the back side of the substrate; and the heat transfer member is in contact with the insulating member at a position adjacent to the radial direction of the substrate and between the upper surface of the mounting table and the lower surface of the annular member. And below and along the annular member.
此外，本發明之其他電漿處理裝置，係在設於真空容器內的兼作下部電極用的載置台之基板載置區域上載置基板，並且在前述下部電極與上部電極之間施加高頻電力而使處理氣體電漿化，對基板施以電漿處理之電漿處理裝置，其特徵在於具備：環狀構件，其係以包圍前述基板載置區域的方式設於前述載置台上，用以調整電漿的狀態；絕緣構件，其係在前述載置台的上面與前述環狀構件的下面之間，沿著該環狀構件，對於前述載置台上的基板中心設置成同心圓狀，用以調整該環狀構件與基板的電位差，以便將電漿中的離子引進到基板的背面側；複數之下側傳熱構件，其係在此絕緣構件與載置台的上面之間密接於兩者，分別沿著環狀構件，對於前述載置台上的基板中心成同心圓狀且在環狀構件的徑向上互相離間設置；及複數之上側傳熱構件，其係在前述絕緣構件與環狀構件的下面之間密接於兩者，分別沿著環狀構件，對於前述載置台上的基板中心成同心圓狀且在環狀構件的徑向上互相離間設置。 Further, in the other plasma processing apparatus of the present invention, the substrate is placed on the substrate mounting region of the mounting table for the lower electrode provided in the vacuum container, and high-frequency power is applied between the lower electrode and the upper electrode. A plasma processing apparatus for plasma-treating a processing gas and applying a plasma treatment to a substrate, comprising: an annular member provided on the mounting table so as to surround the substrate mounting region for adjustment a state of the plasma; an insulating member between the upper surface of the mounting table and the lower surface of the annular member, and the center of the substrate on the mounting table is concentrically arranged along the annular member for adjustment a potential difference between the annular member and the substrate to introduce ions in the plasma to the back side of the substrate; and a plurality of lower heat transfer members are in close contact between the insulating member and the upper surface of the mounting table, respectively Along the annular member, the center of the substrate on the mounting table is concentrically arranged and spaced apart from each other in the radial direction of the annular member; and the plurality of upper heat transfer members are attached to the front Between the lower adhesion to both the insulating member and the annular member, respectively, along the annular member, to the center of the substrate mounting table and concentrically disposed to each other in the radial direction alienation on the annular member.
藉由本發明，由於在環狀構件與載置台之間設有傳熱構件與絕緣構件，所以可抑制電漿照射之際的環狀構件的溫度上升，並可抑制堆積物附著於基板上。此外，即使堆積物附著於基板上，也可以抑制因環狀構件的溫度上升而電漿離子繞到基板背面側的軌道的紊亂，所以可穩定地進行基板背面的堆積物藉由濺射的去除，並可減低堆積物對基板背面的附著量。 According to the present invention, since the heat transfer member and the insulating member are provided between the annular member and the mounting table, the temperature rise of the annular member during the plasma irradiation can be suppressed, and the deposit can be prevented from adhering to the substrate. Further, even if the deposit adheres to the substrate, it is possible to suppress the disorder of the track in which the plasma ions are wound around the back surface side of the substrate due to the temperature rise of the annular member, so that the deposit on the back surface of the substrate can be stably removed by sputtering. And can reduce the amount of deposits on the back side of the substrate.
以下就關於本發明之電容耦合型的電漿蝕刻裝置之一實施形態進行說明。圖1為顯示此電漿蝕刻裝置2的縱剖面圖，此電漿蝕刻裝置2具備用以於其內部對晶圓W施以電漿處理的由例如鋁構成的氣密處理容器(真空容器)20。於此處理容器20底部的中央部設有載置台3。此載置台3之圓柱體上面部的周緣部遍及全周切口，構成為形成有階部31的形狀，即在上面部，周緣部以外的部分突出成圓柱狀的形狀。此突出的部位構成載置基板即晶圓W的基板載置區域32(以下稱為「載置區域」)，包圍此載置區域32的階部31相當於後述的環狀構件的配置區域。 Hereinafter, an embodiment of a capacitive coupling type plasma etching apparatus according to the present invention will be described. 1 is a longitudinal cross-sectional view showing the plasma etching apparatus 2, and the plasma etching apparatus 2 is provided with a hermetic processing container (vacuum container) made of, for example, aluminum for plasma-treating the wafer W therein. 20. A mounting table 3 is provided at a central portion of the bottom of the processing container 20. The peripheral portion of the upper surface portion of the cylindrical portion of the mounting table 3 is formed in a shape in which the step portion 31 is formed over the entire circumference, that is, a portion other than the peripheral portion on the upper surface portion protrudes in a columnar shape. The protruding portion constitutes a substrate mounting region 32 (hereinafter referred to as a "mounting region") of the wafer W on which the substrate is placed, and the step portion 31 surrounding the mounting region 32 corresponds to an arrangement region of an annular member to be described later.
於此載置區域32的上面部設有在絕緣膜上配置吸盤電極33a而成的靜電吸盤33，晶圓W以其周緣部突出的狀態載置於此靜電吸盤33上。前述吸盤電極33a和設於處理容器20外的直流電源34經由開關35而電性連接。此外，於靜電吸盤33上穿設有未圖示的複數之噴出口，可從未圖示的氣體供應部供應熱媒體氣體，例如He氣給該靜電吸盤33與晶圓W之間的微小空間。此外，於載置台3的內部設有未圖示的升降銷，構成為在未圖示的外部的搬送臂與靜電吸盤33之間進行晶圓W的交接。 The upper surface of the mounting region 32 is provided with an electrostatic chuck 33 in which a chuck electrode 33a is disposed on an insulating film, and the wafer W is placed on the electrostatic chuck 33 in a state in which the peripheral portion thereof protrudes. The chuck electrode 33a and the DC power source 34 provided outside the processing container 20 are electrically connected via a switch 35. Further, a plurality of discharge ports (not shown) are bored in the electrostatic chuck 33, and a heat medium gas can be supplied from a gas supply unit (not shown), for example, a small space between the electrostatic chuck 33 and the wafer W. . Further, a lift pin (not shown) is provided inside the mounting table 3, and the wafer W is transferred between the external transfer arm (not shown) and the electrostatic chuck 33.
於載置台3的內部設有冷媒引流室36，可從設於載置台3外部的冷媒供應部37循環供應冷媒。即，從冷媒供應部37經由供應路36a而供應給冷媒引流室36的冷媒經由排出路36b而排出到載置台3外部，在冷媒供應部37利用冷卻器冷卻到預定溫度後，再經由供應路36a而供應給冷媒引流室36。此外，載置台3兼作下部電極用，經由整合器39而連接於高頻電源 部38。此高頻電源部38為用以將偏壓施加於下部電極的偏壓電源，該偏壓係用以引進電漿中的離子。 The refrigerant introduction chamber 36 is provided inside the mounting table 3, and the refrigerant can be circulated and supplied from the refrigerant supply unit 37 provided outside the mounting table 3. In other words, the refrigerant supplied to the refrigerant drainage chamber 36 from the refrigerant supply unit 37 via the supply passage 36a is discharged to the outside of the mounting table 3 via the discharge passage 36b, and is cooled by the cooler supply unit 37 to a predetermined temperature by the cooler, and then via the supply passage. The refrigerant drainage chamber 36 is supplied to 36a. Further, the mounting table 3 also serves as a lower electrode, and is connected to the high frequency power supply via the integrator 39. Department 38. The high frequency power supply unit 38 is a bias power source for applying a bias voltage to the lower electrode for introducing ions in the plasma.
另一方面，於處理容器20的頂部以經由絕緣構件21而對向於前述載置區域32的方式設有噴頭4，此噴頭4係經由供應路42而連接於氣體供應系統41。於該噴頭4的內部形成有緩衝室43，並且於其下面穿設有多數個噴出口44，構成為從氣體供應系統41供應給緩衝室43的處理氣體經由噴出口44而朝向載置區域32側噴出。此外，噴頭4兼作上部電極用，經由整合器45而連接於電漿生成用的高頻電源部46。 On the other hand, a head 4 is provided on the top of the processing container 20 so as to face the mounting area 32 via the insulating member 21, and the head 4 is connected to the gas supply system 41 via the supply path 42. A buffer chamber 43 is formed inside the shower head 4, and a plurality of discharge ports 44 are formed in the lower surface thereof, and the processing gas supplied from the gas supply system 41 to the buffer chamber 43 is directed toward the mounting region 32 via the discharge port 44. Side spout. Further, the head 4 is also used as an upper electrode, and is connected to the high-frequency power supply unit 46 for plasma generation via the integrator 45.
再者，於處理容器20的底部設有排氣口22，此排氣口22上經由介設有閥V及壓力調整部23的排氣路24而連接有真空排氣機構即真空泵浦25。此外，於處理容器20的側壁設有可利用閘門26開關的晶圓W的搬送口27。 Further, an exhaust port 22 is provided at the bottom of the processing container 20, and a vacuum pump 25, which is a vacuum exhaust mechanism, is connected to the exhaust port 22 via an exhaust passage 24 through which a valve V and a pressure adjusting portion 23 are interposed. Further, a transfer port 27 of the wafer W that can be opened and closed by the shutter 26 is provided on the side wall of the processing container 20.
如圖2及圖3所示，於形成於前述載置台3上面的周緣部之階部31的底面(階面)經由絕緣構件6及傳熱構件7而設有聚焦環5。此聚焦環5係以包圍載置區域32的方式設於載置台3上，構成用以調整電漿狀態的環狀構件，由例如矽等的導電性構件所構成。此聚焦環5的內周緣係遍及全周被切口而形成有階部51，從晶圓W的載置區域32突出的周緣部可收納於此聚焦環5之階部51。此外，於載置區域32之外周面32a與聚焦環5之階部51下部側的內周面52之間以稍微形成間隙的方式設定載置區域32及聚焦環5的形狀。如此一來，若將晶圓W載置於載置區域32上，就會將聚焦環5設置成從晶圓W周緣部的背面側包圍側方。 As shown in FIGS. 2 and 3, the bottom surface (step surface) of the step portion 31 formed on the upper surface of the mounting table 3 is provided with a focus ring 5 via the insulating member 6 and the heat transfer member 7. The focus ring 5 is provided on the mounting table 3 so as to surround the mounting region 32, and constitutes an annular member for adjusting the plasma state, and is formed of a conductive member such as a crucible. The inner periphery of the focus ring 5 is formed with a step 51 over the entire circumference, and the peripheral portion protruding from the mounting region 32 of the wafer W can be accommodated in the step portion 51 of the focus ring 5. Further, the shape of the mounting region 32 and the focus ring 5 is set to be slightly formed between the outer peripheral surface 32a of the mounting region 32 and the inner peripheral surface 52 on the lower side of the step portion 51 of the focus ring 5. As described above, when the wafer W is placed on the mounting region 32, the focus ring 5 is disposed so as to surround the side from the back side of the peripheral portion of the wafer W.
此外，於前述載置台3之階部31與聚焦環5的下面之間，將絕緣構件6與傳熱構件7設置成排列於載置台3上的晶圓W 的徑向上。如圖2及圖3所示，前述絕緣構件6於載置台3的上面與聚焦環5的下面之間，沿著聚焦環5，對於載置台3上的晶圓W的中心設置成同心圓狀，起調整該聚焦環與晶圓W的電位差之作用，以便將電漿中的離子引進到前述晶圓W的背面側。此例之絕緣構件6係構成為環狀，接觸到聚焦環5的下面，並且設置成填滿聚焦環5之階部51下部側之內周面52與載置台3之載置區域32之外周面32a之間的間隙。此絕緣構件6除了石英之外，還可利用例如二氧化矽(SiO2)或陶瓷、氮化鋁(AlN)、藍寶石等構成。 Further, between the step portion 31 of the mounting table 3 and the lower surface of the focus ring 5, the insulating member 6 and the heat transfer member 7 are disposed so as to be arranged in the radial direction of the wafer W on the mounting table 3. As shown in FIGS. 2 and 3, the insulating member 6 is disposed concentrically with respect to the center of the wafer W on the mounting table 3 along the focus ring 5 between the upper surface of the mounting table 3 and the lower surface of the focus ring 5. The effect of adjusting the potential difference between the focus ring and the wafer W is to introduce ions in the plasma to the back side of the wafer W. The insulating member 6 of this example is formed in a ring shape and is in contact with the lower surface of the focus ring 5, and is provided to fill the outer peripheral surface 52 of the lower side of the step portion 51 of the focus ring 5 and the outer periphery of the mounting region 32 of the mounting table 3. The gap between the faces 32a. This insulating member 6 may be made of, for example, cerium oxide (SiO 2 ) or ceramic, aluminum nitride (AlN), sapphire or the like in addition to quartz.
此外，前述傳熱構件7係對於絕緣構件6在鄰接於載置台3上的晶圓W徑向的位置且前述載置台3的上面與前述聚焦環5的下面之間，密接於該上面及下面且沿著聚焦環5設置。於此例中，傳熱構件7係對於絕緣構件6設於前述晶圓W的徑向外側上。此傳熱構件7係冷卻聚焦環5，得到自由基種或反應副生成物等附著於晶圓W上的抑制效果成為顯著的程度的傳熱性，於此例中，係由熱傳導性高的材料即填充有氧化鋁的高分子矽凝膠所構成。此外，傳熱構件7除了前述高分子矽凝膠之外，還可用矽系樹脂、碳系樹脂或氟系樹脂等熱傳導係數高的材料構成。 Further, the heat transfer member 7 is in contact with the insulating member 6 at a position in the radial direction of the wafer W adjacent to the mounting table 3, and between the upper surface of the mounting table 3 and the lower surface of the focus ring 5, and is in contact with the upper surface and the lower surface. And it is arranged along the focus ring 5. In this example, the heat transfer member 7 is provided on the radially outer side of the wafer W with respect to the insulating member 6. The heat transfer member 7 cools the focus ring 5, and obtains a heat transfer property in which the effect of suppressing adhesion of a radical species or a reaction by-product to the wafer W is remarkable. In this example, the heat conductivity is high. The material is composed of a polymer gelatin filled with alumina. Further, the heat transfer member 7 may be made of a material having a high thermal conductivity such as a lanthanum resin, a carbon resin, or a fluorine resin, in addition to the above polymer ruthenium gel.
於此例中，絕緣構件6的上面構成為與傳熱構件7上面的高度一致，藉由將聚焦環5載置於此等前述絕緣構件6與傳熱構件7上，在利用石英製的絕緣構件6限制高度的狀態下，將聚焦環5設於載置台3之階部31上。此時，由於使用由黏著性的彈性體構成的填充有氧化鋁的高分子矽凝膠作為傳熱構件7，所以可利用其黏著性確保傳熱構件7與聚焦環5之間、及傳熱構件7與載置台3之階部31之間的密接性。此外，在將聚焦環5設於絕緣構件6與傳熱構件7上時，分別設定上下方向的大小(高度L1)或左右方向的大小(寬度L2、L3)，以便將 晶圓W與聚焦環5的電位差調整於預定的範圍，並且聚焦環5不向左右方向(載置台3上的晶圓W的徑向)傾斜。 In this example, the upper surface of the insulating member 6 is configured to coincide with the height of the upper surface of the heat transfer member 7, and the focus ring 5 is placed on the insulating member 6 and the heat transfer member 7 to be insulated by quartz. The focus ring 5 is placed on the step portion 31 of the mounting table 3 in a state where the member 6 is restricted in height. At this time, since the alumina-filled polymer ruthenium gel composed of an adhesive elastomer is used as the heat transfer member 7, the adhesion between the heat transfer member 7 and the focus ring 5 and heat transfer can be ensured by the adhesiveness. Adhesion between the member 7 and the step portion 31 of the mounting table 3. Further, when the focus ring 5 is provided on the insulating member 6 and the heat transfer member 7, the size (height L1) in the vertical direction or the size (width L2, L3) in the left-right direction are set so that The potential difference between the wafer W and the focus ring 5 is adjusted to a predetermined range, and the focus ring 5 is not inclined in the left-right direction (the radial direction of the wafer W on the mounting table 3).
前述電漿蝕刻裝置2構成為由控制部100所控制。此控制部100係由例如電腦構成，具備程式、記憶體、CPU。前述程式中編入有命令(各步驟)，以便從控制部100傳送控制信號到電漿蝕刻裝置2之各部，使預定的蝕刻處理進行。此程式係儲存於電腦記憶媒體，例如軟性磁碟、光碟、硬碟、MO(磁光碟)等的記憶部後安裝於控制部100上。 The plasma etching apparatus 2 is configured to be controlled by the control unit 100. The control unit 100 is composed of, for example, a computer, and includes a program, a memory, and a CPU. Commands (steps) are incorporated in the above-described program to transmit control signals from the control unit 100 to the respective portions of the plasma etching apparatus 2 to perform predetermined etching processing. The program is stored in a computer memory medium, such as a flexible disk, a compact disk, a hard disk, a MO (magneto-optical disk) or the like, and is mounted on the control unit 100.
此處，前述程式中也含有用以控制靜電吸盤33之開關35、高頻電源部38、46的開、關、氣體供應系統41之處理氣體的供應開始及供應停止、真空泵浦25之閥V的開關等之程式，按照預先記憶於控制部100之記憶體內的製程配方來控制前述各部。 Here, the above-described program also includes the switch 35 for controlling the electrostatic chuck 33, the opening and closing of the high-frequency power supply units 38, 46, the supply start and supply stop of the processing gas of the gas supply system 41, and the valve V of the vacuum pump 25. The program of the switch or the like controls the aforementioned parts in accordance with a process recipe previously stored in the memory of the control unit 100.
接著，就上述電漿蝕刻裝置2之作用進行說明。首先，打開閘門26，從未圖示的真空搬送室利用未圖示的搬送臂，經由搬送口27將晶圓W搬入處理容器20內。然後，晶圓W利用未圖示的升降銷與前述搬送臂的協同作業，交接於靜電吸盤33上，被吸附保持。其次，關閉閘門26後，一面利用真空泵浦25將處理容器20內真空排氣，一面從氣體供應系統41經由噴頭4而供應預定的處理氣體(蝕刻氣體)。 Next, the action of the plasma etching apparatus 2 will be described. First, the shutter 26 is opened, and the wafer W is transported into the processing container 20 via the transfer port 27 by a transfer arm (not shown) from a vacuum transfer chamber (not shown). Then, the wafer W is transferred to the electrostatic chuck 33 by the lift pin (not shown) and the transfer arm, and is sucked and held. Next, after the shutter 26 is closed, the inside of the processing container 20 is evacuated by the vacuum pump 25, and a predetermined processing gas (etching gas) is supplied from the gas supply system 41 via the head 4.
另一方面，從高頻電源部46供應電漿產生用的高頻電力給噴頭4，並且從高頻電源部38供應偏壓用的高頻電力給載置台3而使電漿產生，利用此電漿對於晶圓W進行蝕刻處理。 On the other hand, the high-frequency power for generating plasma is supplied from the high-frequency power supply unit 46 to the head 4, and the high-frequency power for bias is supplied from the high-frequency power supply unit 38 to the mounting table 3 to generate plasma. The plasma is etched on the wafer W.
電漿處理之間，因載置台3上的晶圓W曝露於電漿中而從電漿輸入熱，但如已經敘述，載置台3為冷媒的循環所冷卻， 維持於預先設定的基準溫度，所以將晶圓W之熱經由He氣而散熱到載置台3去。因此，晶圓W藉由電漿的輸入熱與散熱到載置台3的作用之熱平衡而維持於預定的溫度。 Between the plasma treatments, heat is input from the plasma because the wafer W on the mounting table 3 is exposed to the plasma, but as already described, the mounting table 3 is cooled by the circulation of the refrigerant. Since the temperature is maintained at a predetermined reference temperature, the heat of the wafer W is radiated to the mounting table 3 via the He gas. Therefore, the wafer W is maintained at a predetermined temperature by the heat balance between the input heat of the plasma and the action of dissipating heat to the mounting table 3.
此外，聚焦環5也藉由曝露於電漿中而從電漿輸入熱，但聚焦環5係經由熱傳導性高的傳熱構件7而設置於載置台3上，聚焦環5的下面與傳熱構件7的上面、傳熱構件7的下面與載置台3的上面分別利用傳熱構件7的黏著性而密接，所以如圖4所示，聚焦環5之熱經由熱傳構件7而迅速地傳到載置台3去。如此一來，如從後述的實施例可清楚，利用傳熱構件7在電漿處理之間冷卻聚焦環5，而無載置台3上的晶圓W與聚焦環5的溫度差。此結果，可抑制自由基種或反應副生成物選擇地進入晶圓W的背面側周緣部。如此，由於在電漿處理中冷卻聚焦環5，無載置台3上的晶圓W與聚焦環5的溫度差，所以自由基種或反應副生成物附著於晶圓W上的抑制效果成為顯著。 Further, the focus ring 5 is also heated from the plasma by being exposed to the plasma, but the focus ring 5 is placed on the mounting table 3 via the heat transfer member 7 having high thermal conductivity, and the lower surface of the focus ring 5 is transferred to heat transfer. The upper surface of the member 7, the lower surface of the heat transfer member 7, and the upper surface of the mounting table 3 are adhered to each other by the adhesiveness of the heat transfer member 7, so that the heat of the focus ring 5 is rapidly transmitted via the heat transfer member 7 as shown in FIG. Go to the mounting table 3. As described above, as is apparent from the later-described embodiment, the focus ring 5 is cooled by the heat transfer member 7 between the plasma processes without the temperature difference between the wafer W on the stage 3 and the focus ring 5. As a result, it is possible to suppress the radical species or the reaction by-product from selectively entering the peripheral portion of the back surface side of the wafer W. As described above, since the focus ring 5 is cooled during the plasma processing, the temperature difference between the wafer W and the focus ring 5 on the mounting stage 3 is not changed, so that the effect of suppressing the attachment of the radical species or the reaction by-product to the wafer W is remarkable. .
再者，利用絕緣構件6調整聚焦環5的電位，以晶圓W的電位低於聚焦環5的電位的方式(以負地變大的方式)調整聚焦環5與晶圓W的電位差，所以將電漿中的離子引進到晶圓W。藉此，如圖4所示，將電漿中的離子軌道控制成繞到晶圓W背面側，即使在晶圓W背面形成有前述聚合物，此聚合物也會被濺射去除。此外，雖然對絕緣構件6也照射電漿，但利用此電漿的濺射從由石英所構成的絕緣構件6生成O自由基，藉由此O自由基也可以去除形成於前述晶圓W背面的聚合物。 In addition, the potential of the focus ring 5 is adjusted by the insulating member 6, and the potential difference between the focus ring 5 and the wafer W is adjusted so that the potential of the wafer W is lower than the potential of the focus ring 5 (the negative change becomes larger). The ions in the plasma are introduced to the wafer W. Thereby, as shown in FIG. 4, the ion orbital in the plasma is controlled to be wound around the back side of the wafer W, and the polymer is sputter-removed even if the polymer is formed on the back surface of the wafer W. Further, although the insulating member 6 is also irradiated with plasma, sputtering of the plasma generates O radicals from the insulating member 6 made of quartz, whereby the O radical can be removed and formed on the back surface of the wafer W. Polymer.
如此一來，預定時間進行對於晶圓W的蝕刻處理後，停止處理氣體的供應，停止來自高頻電源部38、46的高頻電力供應，並且停止真空泵浦25進行的處理容器20內的真空排氣，將晶圓W搬出到處理容器20的外部。 In this manner, after the etching process for the wafer W is performed for a predetermined period of time, the supply of the processing gas is stopped, the supply of the high-frequency power from the high-frequency power supply units 38 and 46 is stopped, and the vacuum in the processing container 20 by the vacuum pump 25 is stopped. The exhaust gas is carried out to carry out the wafer W to the outside of the processing container 20.
依據上述實施形態，由於在聚焦環5的下方側設有絕緣構件6及傳熱構件7，所以電漿處理中的聚焦環5被冷卻，可抑制聚合物(堆積物)附著於晶圓W的背面側周緣部。此時，由於傳熱構件7和載置台3上的晶圓W設置成同心圓狀，所以聚焦環5在晶圓W的周向被大致均勻地冷卻。此外，由於溫度因聚焦環5的溫度上升被抑制而穩定，所以無繞到晶圓W背面側的電漿中的離子軌道因聚焦環5的溫度變化而變化之虞。因此，可利用濺射穩定地去除形成於晶圓W背面側的聚合物，並可減低前述聚合物的附著量。 According to the above embodiment, since the insulating member 6 and the heat transfer member 7 are provided on the lower side of the focus ring 5, the focus ring 5 in the plasma processing is cooled, and the adhesion of the polymer (deposit) to the wafer W can be suppressed. The peripheral portion of the back side. At this time, since the heat transfer member 7 and the wafer W on the mounting table 3 are arranged concentrically, the focus ring 5 is substantially uniformly cooled in the circumferential direction of the wafer W. Further, since the temperature is suppressed by the temperature rise of the focus ring 5 and is stabilized, the ion orbital in the plasma wound on the back side of the wafer W does not change due to the temperature change of the focus ring 5. Therefore, the polymer formed on the back side of the wafer W can be stably removed by sputtering, and the amount of adhesion of the aforementioned polymer can be reduced.
此外，絕緣構件6與傳熱構件7於載置台3上的晶圓W的徑向上互相鄰接設置，聚焦環5載置於此等絕緣構件6及傳熱構件7上。此時，由於聚焦環5以由石英構成的絕緣構件6規定高度，所以無聚焦環5的高度變化之虞，可抑制晶圓W周緣的電漿的紊亂。此外，由於傳熱構件7不介於絕緣構件6與聚焦環5之間，所以無聚焦環5下方側的阻抗變化之虞，電漿處理中的聚焦環的電位穩定。 Further, the insulating member 6 and the heat transfer member 7 are disposed adjacent to each other in the radial direction of the wafer W on the mounting table 3, and the focus ring 5 is placed on the insulating member 6 and the heat transfer member 7. At this time, since the focus ring 5 has a predetermined height by the insulating member 6 made of quartz, the height of the focus ring 5 does not change, and the plasma of the periphery of the wafer W can be suppressed from being disturbed. Further, since the heat transfer member 7 is not interposed between the insulating member 6 and the focus ring 5, the impedance of the focus ring on the lower side of the focus ring 5 is not changed, and the potential of the focus ring in the plasma processing is stabilized.
如此，於聚焦環5與載置台3之間個別地存在經由絕緣構件6而電性連接兩者的部位、及經由傳熱構件7而熱性連接兩者的部位。藉此，可分別獨立地進行絕緣構件6的電性控制與傳熱構件7的溫度控制，所以可抑制此等控制的複雜化。再者，在上述實施形態中，由於將絕緣構件6設置成位於載置區域32側，所以絕緣構件6位於載置台3上的晶圓W的附近，藉由已經敘述的O自由基去除聚合物將迅速地進行。 As described above, between the focus ring 5 and the mounting table 3, a portion that is electrically connected via the insulating member 6 and a portion that is thermally connected via the heat transfer member 7 are individually present. Thereby, the electrical control of the insulating member 6 and the temperature control of the heat transfer member 7 can be independently performed, so that the complication of such control can be suppressed. Further, in the above embodiment, since the insulating member 6 is provided on the side of the mounting region 32, the insulating member 6 is located in the vicinity of the wafer W on the mounting table 3, and the polymer is removed by the O radical described above. Will proceed quickly.
於以上，在本實施形態中，將絕緣構件與傳熱構件在聚焦環5與載置台3之間於載置台3上的晶圓W的徑向上互相鄰接設置即可，也可以配置成如圖5所示，絕緣構件6對於傳熱構 件71設於前述晶圓W的徑向的外側。於此例中，傳熱構件71設置成其內周面70在上下方向與聚焦環5之階部51下部側之內周面52一致。 As described above, in the present embodiment, the insulating member and the heat transfer member may be disposed adjacent to each other in the radial direction of the wafer W on the mounting table 3 between the focus ring 5 and the mounting table 3, and may be arranged as shown in the figure. 5, the insulating member 6 is for heat transfer structure The member 71 is provided on the outer side in the radial direction of the wafer W. In this example, the heat transfer member 71 is disposed such that its inner peripheral surface 70 coincides with the inner peripheral surface 52 on the lower side of the step portion 51 of the focus ring 5 in the vertical direction.
接著，就本發明之第2實施形態，參閱圖6及圖7進行說明。此例係在將絕緣構件與傳熱構件同心圓狀地設於載置區域32外方的構造中，將第1絕緣構件62a及第2絕緣構件62b分別互相鄰接地設於傳熱構件72的左右兩側(載置台3上的晶圓W徑向的兩側)。此種構造係藉由下述而形成：將絕緣構件62a、62b及片狀的傳熱構件72分別形成為環狀，排列成第1絕緣構件62a、傳熱構件72、第2絕緣構件62b從載置台3上的晶圓W徑向的內側向外側依此順序排列於載置台3之階部31上面。 Next, a second embodiment of the present invention will be described with reference to Figs. 6 and 7 . In this example, the insulating member and the heat transfer member are disposed concentrically outside the mounting region 32, and the first insulating member 62a and the second insulating member 62b are provided adjacent to each other in the heat transfer member 72. Left and right sides (both sides of the wafer W on the mounting table 3 in the radial direction). Such a structure is formed by forming the insulating members 62a and 62b and the sheet-like heat transfer member 72 in a ring shape, and arranging the first insulating member 62a, the heat transfer member 72, and the second insulating member 62b. The inner side of the wafer W on the mounting table 3 in the radial direction is arranged on the outer side of the step portion 31 of the mounting table 3 in this order.
於此例中，也利用由例如石英所構成的第1絕緣構件62a及第2絕緣構件62b將聚焦環5在限制其高度位置的狀態下設置。此外，傳熱構件72因具有黏著性而利用其黏著性在聚焦環5與傳熱構件72之間、及傳熱構件72與載置台3之間被分別密接。 In this example, the focus ring 5 is also disposed in a state where the height of the focus ring 5 is restricted by the first insulating member 62a and the second insulating member 62b made of, for example, quartz. Further, the heat transfer member 72 is adhered to each other between the focus ring 5 and the heat transfer member 72 and between the heat transfer member 72 and the mounting table 3 by adhesiveness due to adhesiveness.
於此構造中，也因將絕緣構件62a、62b與傳熱構件72在左右方向鄰接地設於載置台3與聚焦環5之間，而聚焦環5沿著周向被大致均勻地冷卻，可減低附著於晶圓W背面側的聚合物的附著量。此外，由於將絕緣構件6設於傳熱構件72左右方向的兩側，所以在進一步抑制聚焦環5高度變化的狀態下，可確保傳熱構件72與聚焦環5及載置台3的密接性。再者，可獨立地進行利用絕緣構件62a、62b電性控制聚焦環5、及利用傳熱構件72溫度控制聚焦環5。 In this configuration, the insulating members 62a and 62b and the heat transfer member 72 are provided adjacent to each other in the left-right direction between the mounting table 3 and the focus ring 5, and the focus ring 5 is substantially uniformly cooled in the circumferential direction. The amount of adhesion of the polymer adhering to the back side of the wafer W is reduced. Further, since the insulating member 6 is provided on both sides in the left-right direction of the heat transfer member 72, the adhesion between the heat transfer member 72 and the focus ring 5 and the mounting table 3 can be ensured while further suppressing the change in the height of the focus ring 5. Further, the focus ring 5 can be electrically controlled by the insulating members 62a and 62b and the focus ring 5 can be controlled by the temperature of the heat transfer member 72.
再者，由於是傳熱構件71為絕緣構件62a、62b所包圍的狀態，所以傳熱構件72難以為電漿所濺射。藉此，可抑制傳 熱構件72的消耗或劣化，所以可長期穩定地進行聚焦環5的溫度控制。 Further, since the heat transfer member 71 is surrounded by the insulating members 62a and 62b, it is difficult for the heat transfer member 72 to be sputtered by the plasma. Thereby, the transmission can be suppressed Since the heat member 72 is consumed or deteriorated, the temperature control of the focus ring 5 can be stably performed for a long period of time.
接著，就本實施形態的變形例，使用圖8~圖10進行說明。圖8之例係在將絕緣構件63與傳熱構件73和載置區域32同心圓狀地設於該載置區域32外方的構造中，沿著載置台3上的晶圓W的周向互相空開間隔而設置傳熱構件73。此時，沿著圖8中A-A線的剖面構成為如圖6所示。 Next, a modification of this embodiment will be described with reference to Figs. 8 to 10 . In the example of FIG. 8, the insulating member 63 and the heat transfer member 73 and the mounting region 32 are provided concentrically outside the mounting region 32, along the circumferential direction of the wafer W on the mounting table 3. The heat transfer members 73 are disposed at intervals from each other. At this time, the cross section along the line A-A in Fig. 8 is configured as shown in Fig. 6.
此時，也可以如圖9所示，將多數個傳熱構件74和載置區域32同心圓狀地互相空開間隔而設於絕緣構件64的內部。此時，沿著圖9中B-B線的剖面構成為如圖6所示。 At this time, as shown in FIG. 9, a plurality of heat transfer members 74 and the mounting region 32 may be provided inside the insulating member 64 with a concentric arrangement therebetween. At this time, the cross section along the line B-B in Fig. 9 is configured as shown in Fig. 6.
此等圖8及圖9的構造係藉由下述而構成：在由例如石英環所構成的絕緣構件63、64上空開預定間隔而形成切口，於此切口部位內填滿由具有黏著性的彈性體構成的傳熱構件73、74。此時，傳熱構件73、74以其上面密接於聚焦環5且下面密接於載置台3的方式分別設置於絕緣構件63、64上。 The structures of Figs. 8 and 9 are constructed by forming a slit at a predetermined interval on the insulating members 63, 64 made of, for example, a quartz ring, and the slit portion is filled with adhesiveness. Heat transfer members 73, 74 made of elastomer. At this time, the heat transfer members 73 and 74 are respectively provided on the insulating members 63 and 64 so that the upper surface thereof is in close contact with the focus ring 5 and the lower surface is in close contact with the mounting table 3.
於此等構造中，也因絕緣構件63(64)和傳熱構件73(74)係在載置台3與聚焦環5之間，將絕緣構件63(64)鄰接地設於傳熱構件73(74)的左右兩側，而可得到和上述第2實施形態同樣的效果。 In these configurations, the insulating member 63 (64) and the heat transfer member 73 (74) are disposed between the mounting table 3 and the focus ring 5, and the insulating member 63 (64) is adjacently provided to the heat transfer member 73 ( The left and right sides of 74) can obtain the same effects as those of the second embodiment described above.
此外，圖10所示之例係於將絕緣構件與傳熱構件和載置區域32同心圓狀地設於該載置區域32外方的構造中，將絕緣構件65a~65c和片狀的傳熱構件75a、75b設置成層積於載置台3上的晶圓W的徑向上。如圖10(a)、(b)所示，此種構造係藉由下述而構成：準備由石英環所構成的絕緣構件65a~65c，利用兩個絕緣構件65a、65b(65b、65c)從兩側夾入環狀的薄片 狀的傳熱構件75a(75b)。傳熱構件75a(75b)以其上面密接於聚焦環5且下面密接於載置台3的方式設置於絕緣構件65a~65c上。 Further, the example shown in FIG. 10 is a structure in which an insulating member is provided concentrically with the heat transfer member and the mounting region 32 outside the mounting region 32, and the insulating members 65a to 65c and the sheet-like transfer are provided. The heat members 75a and 75b are provided to be laminated on the radial direction of the wafer W on the mounting table 3. As shown in Figs. 10(a) and (b), such a structure is constituted by preparing insulating members 65a to 65c composed of a quartz ring, and using two insulating members 65a and 65b (65b, 65c). Sandwiching the annular sheet from both sides Heat transfer member 75a (75b). The heat transfer member 75a (75b) is provided on the insulating members 65a to 65c so that the upper surface thereof is in close contact with the focus ring 5 and the lower surface is in close contact with the mounting table 3.
此處，為了使聚焦環5與載置台3熱性接觸，前述傳熱構件75a(75b)的上下兩端設置成分別密接於聚焦環5的下面及載置台3的上面和下面。此時，也可以如圖10(c)所示，傳熱構件75a(75b)的上下兩端設置成從絕緣構件65a~65c的上面及下面露出，並且在聚焦環5的下面及載置台3的上面設置對應於前述露出部分的槽部50、30，經由此露出部分及槽部50、30而使傳熱構件75a(75b)密接於聚焦環5及載置台3。 Here, in order to bring the focus ring 5 into thermal contact with the mounting table 3, the upper and lower ends of the heat transfer member 75a (75b) are provided in close contact with the lower surface of the focus ring 5 and the upper surface and the lower surface of the mounting table 3, respectively. At this time, as shown in FIG. 10(c), the upper and lower ends of the heat transfer member 75a (75b) may be provided to be exposed from the upper surface and the lower surface of the insulating members 65a to 65c, and under the focus ring 5 and the mounting table 3. The groove portions 50 and 30 corresponding to the exposed portions are provided on the upper surface, and the heat transfer member 75a (75b) is in close contact with the focus ring 5 and the mounting table 3 via the exposed portions and the groove portions 50 and 30.
於此構造中，也因絕緣構件65a~65c與傳熱構件75a、75b係在載置台3與聚焦環5之間，設置成絕緣構件65鄰接於傳熱構件75的左右兩側，而可得到和上述第2實施形態同樣的效果。 In this configuration, the insulating members 65a to 65c and the heat transfer members 75a and 75b are disposed between the mounting table 3 and the focus ring 5, and the insulating member 65 is disposed adjacent to the left and right sides of the heat transfer member 75. The same effects as those of the second embodiment described above.
接著，就本發明之第3實施形態，參閱圖11進行說明。此例係在絕緣構件66與載置台3之間設置複數之下側傳熱構件76a，並且在絕緣構件66與聚焦環5之間設置複數之上側傳熱構件76b的構造。前述複數之下側傳熱構件76a係在絕緣構件66與載置台3的上面之間密接於兩者，分別沿著聚焦環5而環狀且互相離間地設於聚焦環5的徑向上。此外，前述複數之上側傳熱構件76b係在絕緣構件66與聚焦環5的下面之間密接於兩者，分別沿著聚焦環5而環狀且互相離間地設於聚焦環5的徑向上。 Next, a third embodiment of the present invention will be described with reference to Fig. 11 . In this example, a plurality of lower side heat transfer members 76a are provided between the insulating member 66 and the mounting table 3, and a plurality of upper side heat transfer members 76b are provided between the insulating member 66 and the focus ring 5. The plurality of lower heat transfer members 76a are in close contact with each other between the insulating member 66 and the upper surface of the mounting table 3, and are disposed annularly along the focus ring 5 and spaced apart from each other in the radial direction of the focus ring 5. Further, the plurality of upper heat transfer members 76b are in close contact with each other between the insulating member 66 and the lower surface of the focus ring 5, and are annularly disposed along the focus ring 5 and spaced apart from each other in the radial direction of the focus ring 5.
具體而言，係藉由下述而構成：如例如圖11(b)所示，於由例如石英環構成的絕緣構件66之上下貼設複數條，例如4條環狀的片狀的下側傳熱構件76a及上側傳熱構件76b。此外， 以將於聚焦環5徑向互相鄰接的傳熱構件76a、76b間之空間連通到處理容器20內的氣氛的方式，將複數之切口部77沿著周向形成於各個傳熱構件76a、76b上。再者，於此例中，雖然以不互相重疊於上下方向的方式設於絕緣構件66表面側的傳熱構件76a與背面側的傳熱構件76b上，但此等傳熱構件76a、76b也可以設置成互相重疊於上下方向。此外，前述切口部77也可以形成於下側傳熱構件76a及上側傳熱構件76b之至少一方上。 Specifically, it is configured by, for example, as shown in FIG. 11(b), a plurality of strips are attached to the insulating member 66 made of, for example, a quartz ring, for example, the lower side of four annular sheets. The heat transfer member 76a and the upper heat transfer member 76b. In addition, A plurality of slit portions 77 are formed in the circumferential direction on the respective heat transfer members 76a, 76b in such a manner that the space between the heat transfer members 76a, 76b adjacent to each other in the radial direction of the focus ring 5 communicates with the atmosphere in the processing container 20. on. In this example, the heat transfer member 76a on the surface side of the insulating member 66 and the heat transfer member 76b on the back side are provided so as not to overlap each other in the vertical direction. However, the heat transfer members 76a and 76b are also provided. It can be set to overlap each other in the up and down direction. Further, the cutout portion 77 may be formed on at least one of the lower heat transfer member 76a and the upper heat transfer member 76b.
於此構造方面，在電漿處理中，由於聚焦環5之熱依上側傳熱構件76b→絕緣構件66→下側傳熱構件76a→載置台3的路徑移動，所以聚焦環5在電漿處理中被冷卻。藉此，和上述第1實施形態同樣，可減低聚合物對晶圓W背面側周緣部的附著量。此外，由於傳熱構件76a、76b和載置區域32設置成同心圓狀，所以可沿著周向大致均勻地冷卻聚焦環5。 In this configuration, in the plasma processing, since the heat of the focus ring 5 moves according to the path of the upper heat transfer member 76b → the insulating member 66 → the lower heat transfer member 76 a → the stage 3, the focus ring 5 is treated by plasma. It is cooled. Thereby, similarly to the above-described first embodiment, the amount of adhesion of the polymer to the peripheral edge portion of the back side of the wafer W can be reduced. Further, since the heat transfer members 76a, 76b and the placement region 32 are disposed concentrically, the focus ring 5 can be cooled substantially uniformly in the circumferential direction.
此外，由於傳熱構件76a、76b使其面接觸於絕緣構件66，所以在貼附時有氣泡混入絕緣構件66與傳熱構件76a、76b之間之虞。此時，由於切口部77形成於傳熱構件76a、76b上，所以將處理容器20內進行真空排氣之際，氣泡會從此切口部77逐漸放出，結果，在電漿處理時成為氣泡大致不存在於絕緣構件66與傳熱構件76a、76b之間的狀態。藉此，使傳熱構件76a、76b與絕緣構件66的接觸狀態在面內(聚焦環5的下面全體)一致，所以聚焦環5之熱在面內大致均勻地往載置台3側移動，可將聚焦環5大致均勻地進行溫度調整。 Further, since the heat transfer members 76a and 76b are in surface contact with the insulating member 66, air bubbles are mixed between the insulating member 66 and the heat transfer members 76a and 76b at the time of attachment. At this time, since the notch portion 77 is formed in the heat transfer members 76a and 76b, when the inside of the processing container 20 is evacuated, the air bubbles are gradually discharged from the notch portion 77, and as a result, the bubble is substantially not formed during the plasma processing. There is a state between the insulating member 66 and the heat transfer members 76a, 76b. Thereby, the contact state between the heat transfer members 76a and 76b and the insulating member 66 is made to match in the plane (the entire lower surface of the focus ring 5), so that the heat of the focus ring 5 moves substantially evenly toward the mounting table 3 side in the plane. The focus ring 5 is temperature-adjusted substantially uniformly.
於以上，在本發明方面，如圖12(a)所示，聚焦環5下面的高度位置在載置台3上的晶圓W的徑向上互相不同之情況也包含於本發明之範圍內。此外，如圖12(b)所示，在例如將絕緣構件68與傳熱構件78並排排列於前述晶圓W的徑向上的情況， 傳熱構件78的一部分進入絕緣構件68的內部，絕緣構件68與傳熱構件78在前述左右方向的一部分層積於上下方向的情況也包含於本發明之範圍內。 As described above, in the aspect of the invention, as shown in Fig. 12(a), the height position of the lower surface of the focus ring 5 in the radial direction of the wafer W on the mounting table 3 is also included in the scope of the present invention. Further, as shown in FIG. 12(b), for example, when the insulating member 68 and the heat transfer member 78 are arranged side by side in the radial direction of the wafer W, A part of the heat transfer member 78 enters the inside of the insulating member 68, and a case where the insulating member 68 and the heat transfer member 78 are stacked in the vertical direction in the left-right direction are also included in the scope of the present invention.
此外，也可以如圖13所示，於載置台3的上面與聚焦環5的下面之間，對於前述載置台3上的晶圓W之中心同心圓狀地設置絕緣構件69，並且遍及此載置台3的外側面、絕緣構件69的外側面及前述聚焦環5的外側面密接於此等外側面且沿著聚焦環5設置傳熱構件79。於此構造中，也因聚焦環5之熱經由傳熱構件79而傳到載置台3，所以於電漿處理之際，聚焦環5被冷卻。此時，傳熱構件79可以構成為環狀，也可以對於載置台3上的晶圓W之中心同心圓狀地互相空開間隔而設置。 Further, as shown in FIG. 13, an insulating member 69 may be provided concentrically with respect to the center of the wafer W on the mounting table 3 between the upper surface of the mounting table 3 and the lower surface of the focus ring 5, and may be carried over the entire surface. The outer side surface of the table 3, the outer side surface of the insulating member 69, and the outer side surface of the focus ring 5 are in close contact with the outer side surfaces, and the heat transfer member 79 is provided along the focus ring 5. Also in this configuration, since the heat of the focus ring 5 is transmitted to the mounting table 3 via the heat transfer member 79, the focus ring 5 is cooled at the time of plasma processing. At this time, the heat transfer member 79 may be formed in a ring shape, or may be provided to be spaced apart from each other concentrically with respect to the center of the wafer W on the mounting table 3.
使用圖1的電漿蝕刻裝置對於晶圓W進行電漿處理，測定此時的聚焦環5的溫度變化。此時，從電漿產生用的高頻電源部46供應1200W的高頻電力，將載置區域32上的晶圓W設定於30℃，供應CF系氣體作為處理氣體，對於5片晶圓W連續地進行電漿處理，利用使用低同調光干涉的溫度計測定聚焦環5的溫度(實施例)。此外，使用石英環作為絕緣構件6，使用由填充有氧化鋁的高分子矽凝膠形成為厚度為0.5mm的熱傳導片作為傳熱構件7。此外，作為比較例，對於不設傳熱構件7的情況也進行同樣的電漿處理，測定此時的聚焦環5的溫度。 The wafer W was subjected to plasma treatment using the plasma etching apparatus of Fig. 1, and the temperature change of the focus ring 5 at this time was measured. At this time, 1200 W of high-frequency power is supplied from the high-frequency power supply unit 46 for plasma generation, and the wafer W on the mounting region 32 is set to 30° C., and CF-based gas is supplied as a processing gas for five wafers W. The plasma treatment was continuously performed, and the temperature of the focus ring 5 was measured by a thermometer using low coherent light interference (Example). Further, a quartz ring was used as the insulating member 6, and a heat conductive sheet having a thickness of 0.5 mm formed of a polymer ruthenium gel filled with alumina was used as the heat transfer member 7. Further, as a comparative example, the same plasma treatment was also performed in the case where the heat transfer member 7 was not provided, and the temperature of the focus ring 5 at this time was measured.
圖14中顯示此結果。比較例、實施例均於電漿產生的時點，聚焦環5的溫度上升，可理解從電漿輸入熱到聚焦環5。然而，在實施例方面，吾人確認：即使經過處理時間，聚焦環5的溫度變化也大致相同，藉由設置傳熱構件7，聚焦環5之熱往載置台3移動，抑制熱蓄積於聚焦環5，可將聚焦環5冷卻到約50℃程度。另一方面，在比較例方面，聚焦環5的溫度 隨著處理時間的經過而上升，若繼續電漿的照射，則蓄熱於聚焦環5內，可理解聚焦環5會上升到約230度。 This result is shown in Figure 14. In the comparative example and the embodiment, the temperature of the focus ring 5 rises at the time when the plasma is generated, and it is understood that the heat is input from the plasma to the focus ring 5. However, in the embodiment, it has been confirmed that the temperature change of the focus ring 5 is substantially the same even after the treatment time is passed, and by providing the heat transfer member 7, the heat of the focus ring 5 is moved toward the mounting table 3, and the heat accumulation is suppressed to the focus ring. 5. The focus ring 5 can be cooled to about 50 °C. On the other hand, in the comparative example, the temperature of the focus ring 5 As the processing time increases, if the plasma is irradiated, the heat is stored in the focus ring 5, and it can be understood that the focus ring 5 rises to about 230 degrees.
於以上，本發明除了半導體晶圓W之外，也可以適用於對於FPD(平板顯示器)用的玻璃基板等的基板進行電漿處理的電漿處理裝置。此外，本發明除了蝕刻處理之外，還可以適用於進行灰化或CVD(化學氣相沉積)、電漿加工等電漿處理的電漿處理裝置。 As described above, the present invention can be applied to a plasma processing apparatus that performs plasma treatment on a substrate such as a glass substrate for an FPD (flat panel display) in addition to the semiconductor wafer W. Further, the present invention can be applied to a plasma processing apparatus which performs plasma treatment such as ashing or CVD (Chemical Vapor Deposition) or plasma processing, in addition to the etching treatment.
V‧‧‧閥 V‧‧‧ valve
W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer
11‧‧‧載置台 11‧‧‧ mounting table
12‧‧‧聚焦環 12‧‧‧ Focus ring
13‧‧‧聚合物 13‧‧‧ polymer
14‧‧‧絕緣物 14‧‧‧Insulators
2‧‧‧電漿蝕刻裝置 2‧‧‧ Plasma etching device
20‧‧‧處理容器 20‧‧‧Processing container
21‧‧‧絕緣構件 21‧‧‧Insulating components
22‧‧‧排氣口 22‧‧‧Exhaust port
23‧‧‧壓力調整部 23‧‧‧ Pressure Adjustment Department
24‧‧‧排氣路 24‧‧‧Exhaust road
25‧‧‧真空泵浦 25‧‧‧vacuum pump
26‧‧‧閘門 26‧‧ ‧ gate
27‧‧‧搬送口 27‧‧‧Transportation port
3‧‧‧載置台 3‧‧‧ mounting table
30‧‧‧槽部 30‧‧‧Slots
31‧‧‧階部 31‧‧‧
32‧‧‧載置區域 32‧‧‧Loading area
32a‧‧‧外周面 32a‧‧‧ outer perimeter
33‧‧‧靜電吸盤 33‧‧‧Electrostatic suction cup
33a‧‧‧吸盤電極 33a‧‧‧Sucker electrode
34‧‧‧直流電源 34‧‧‧DC power supply
35‧‧‧開關 35‧‧‧ switch
36‧‧‧冷媒引流室 36‧‧‧Refrigerant drainage room
36a‧‧‧供應路 36a‧‧‧Supply Road
36b‧‧‧排出路 36b‧‧‧Drainage
37‧‧‧冷媒供應部 37‧‧‧Reservative Supply Department
38‧‧‧偏壓用高頻電源部 38‧‧‧Variable high frequency power supply unit
39‧‧‧整合器 39‧‧‧ Integrator
4‧‧‧噴頭 4‧‧‧Spray
41‧‧‧氣體供應系統 41‧‧‧ gas supply system
42‧‧‧供應路 42‧‧‧Supply road
43‧‧‧緩衝室 43‧‧‧ buffer room
44‧‧‧噴出口 44‧‧‧Spray outlet
45‧‧‧整合器 45‧‧‧ Integrator
46‧‧‧電漿產生用高頻電源部 46‧‧‧High frequency power supply for plasma generation
5‧‧‧聚焦環 5‧‧‧ Focus ring
50‧‧‧槽部 50‧‧‧ slot department
51‧‧‧階部 51‧‧‧
52‧‧‧內周面 52‧‧‧ inner circumference
6、6a、6b、61~69‧‧‧絕緣構件 6, 6a, 6b, 61~69‧‧‧ insulation members
7、71~79‧‧‧傳熱構件 7, 71~79‧‧‧ heat transfer components
70‧‧‧內周面 70‧‧‧ inner circumference
100‧‧‧控制部 100‧‧‧Control Department
圖1為顯示關於本發明之電漿蝕刻裝置第1實施形態的縱剖側面圖。 Fig. 1 is a longitudinal sectional side view showing a first embodiment of a plasma etching apparatus according to the present invention.
圖2為顯示設於前述電漿蝕刻裝置上之載置台一部分的縱剖面圖。 Fig. 2 is a longitudinal cross-sectional view showing a part of a mounting table provided on the plasma etching apparatus.
圖3為前述載置台的平面圖及縱剖面圖。 3 is a plan view and a longitudinal cross-sectional view of the mounting table.
圖4為用以說明本發明之作用的縱剖面圖。 Fig. 4 is a longitudinal sectional view for explaining the action of the present invention.
圖5為顯示本發明第1實施形態之他例的縱剖面圖。 Fig. 5 is a longitudinal sectional view showing another example of the first embodiment of the present invention.
圖6為顯示本發明之電漿蝕刻裝置第2實施形態的縱剖面圖。 Fig. 6 is a longitudinal sectional view showing a second embodiment of the plasma etching apparatus of the present invention.
圖7為顯示設於圖6的電漿蝕刻裝置上之載置台的平面圖。 Fig. 7 is a plan view showing a mounting table provided in the plasma etching apparatus of Fig. 6.
圖8為顯示本發明第2實施形態之他例之載置台的平面圖。 Fig. 8 is a plan view showing a mounting table of another example of the second embodiment of the present invention.
圖9為顯示本發明第2實施形態之另外他例之載置台的平面圖。 Fig. 9 is a plan view showing a mounting table of another example of the second embodiment of the present invention.
圖10(a)(b)(c)為顯示本發明第2實施形態之另外他例之載置台的平面圖及縱剖面圖。 Fig. 10 (a), (b) and (c) are a plan view and a longitudinal sectional view showing a mounting table according to another example of the second embodiment of the present invention.
圖11(a)(b)為顯示本發明之電漿蝕刻裝置第3實施形態的平面圖及部分斜視圖。 Fig. 11 (a) and (b) are a plan view and a partial perspective view showing a third embodiment of the plasma etching apparatus of the present invention.
圖12(a)(b)為顯示本發明之電漿蝕刻裝置之另外他例之載置台的縱剖面圖。 Fig. 12 (a) and (b) are longitudinal sectional views showing another stage of the plasma etching apparatus of the present invention.
圖13為顯示本發明之電漿蝕刻裝置之另外他例之載置台的縱剖面圖。 Fig. 13 is a longitudinal sectional view showing another stage of the plasma etching apparatus of the present invention.
圖14為顯示為確認本發明之效果而實施之實施例的特性圖。 Fig. 14 is a characteristic diagram showing an embodiment which is carried out to confirm the effects of the present invention.
圖15(a)(b)為顯示習知之載置台的縱剖面圖。 Fig. 15 (a) and (b) are longitudinal sectional views showing a conventional mounting table.
2‧‧‧電漿蝕刻裝置 2‧‧‧ Plasma etching device
3‧‧‧載置台 3‧‧‧ mounting table
4‧‧‧噴頭 4‧‧‧Spray
5‧‧‧聚焦環 5‧‧‧ Focus ring
6‧‧‧絕緣構件 6‧‧‧Insulating components
7‧‧‧傳熱構件 7‧‧‧ Heat transfer components
20‧‧‧處理容器 20‧‧‧Processing container
21‧‧‧絕緣構件 21‧‧‧Insulating components
22‧‧‧排氣口 22‧‧‧Exhaust port
23‧‧‧壓力調整部 23‧‧‧ Pressure Adjustment Department
24‧‧‧排氣路 24‧‧‧Exhaust road
25‧‧‧真空泵浦 25‧‧‧vacuum pump
26‧‧‧閘門 26‧‧ ‧ gate
27‧‧‧搬送口 27‧‧‧Transportation port
31‧‧‧階部 31‧‧‧
32‧‧‧載置區域 32‧‧‧Loading area
33‧‧‧靜電吸盤 33‧‧‧Electrostatic suction cup
33a‧‧‧吸盤電極 33a‧‧‧Sucker electrode
34‧‧‧直流電源 34‧‧‧DC power supply
35‧‧‧開關 35‧‧‧ switch
36‧‧‧冷媒引流室 36‧‧‧Refrigerant drainage room
36a‧‧‧供應路 36a‧‧‧Supply Road
36b‧‧‧排出路 36b‧‧‧Drainage
37‧‧‧冷媒供應部 37‧‧‧Reservative Supply Department
38‧‧‧偏壓用高頻電源部 38‧‧‧Variable high frequency power supply unit
39‧‧‧整合器 39‧‧‧ Integrator
41‧‧‧氣體供應系統 41‧‧‧ gas supply system
42‧‧‧供應路 42‧‧‧Supply road
43‧‧‧緩衝室 43‧‧‧ buffer room
44‧‧‧噴出口 44‧‧‧Spray outlet
45‧‧‧整合器 45‧‧‧ Integrator
46‧‧‧電漿產生用高頻電源部 46‧‧‧High frequency power supply for plasma generation
100‧‧‧控制部 100‧‧‧Control Department
V‧‧‧閥 V‧‧‧ valve
W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer
Claims (6)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011072677A JP5741124B2 (en) | 2011-03-29 | 2011-03-29 | Plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201301383A TW201301383A (en) | 2013-01-01 |
| TWI566296B true TWI566296B (en) | 2017-01-11 |
Family
ID=46925811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101109355A TWI566296B (en) | 2011-03-29 | 2012-03-19 | Plasma processing device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120247954A1 (en) |
| JP (1) | JP5741124B2 (en) |
| KR (1) | KR101910670B1 (en) |
| CN (1) | CN102737940B (en) |
| TW (1) | TWI566296B (en) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5886700B2 (en) * | 2012-07-09 | 2016-03-16 | 東京エレクトロン株式会社 | Heat transfer sheet sticking device and heat transfer sheet sticking method |
| JP6689020B2 (en) | 2013-08-21 | 2020-04-28 | 東京エレクトロン株式会社 | Plasma processing device |
| JP6374301B2 (en) | 2013-12-24 | 2018-08-15 | 東京エレクトロン株式会社 | Stage, stage manufacturing method, heat exchanger |
| JP6018606B2 (en) * | 2014-06-27 | 2016-11-02 | 東京エレクトロン株式会社 | System including temperature-controllable stage, semiconductor manufacturing apparatus, and stage temperature control method |
| JP6345030B2 (en) * | 2014-08-11 | 2018-06-20 | 東京エレクトロン株式会社 | Plasma processing apparatus and focus ring |
| JP6149945B2 (en) * | 2014-09-30 | 2017-06-21 | 住友大阪セメント株式会社 | Electrostatic chuck device |
| CN104715997A (en) * | 2015-03-30 | 2015-06-17 | 上海华力微电子有限公司 | Focusing ring and plasma processing device provided with same |
| US10854492B2 (en) * | 2015-08-18 | 2020-12-01 | Lam Research Corporation | Edge ring assembly for improving feature profile tilting at extreme edge of wafer |
| KR102581226B1 (en) * | 2016-12-23 | 2023-09-20 | 삼성전자주식회사 | Plasma processing device |
| CN111048394A (en) * | 2017-01-05 | 2020-04-21 | 东京毅力科创株式会社 | Plasma processing apparatus |
| US10199252B2 (en) * | 2017-06-30 | 2019-02-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal pad for etch rate uniformity |
| JP6932034B2 (en) * | 2017-07-13 | 2021-09-08 | 東京エレクトロン株式会社 | Heat transfer sheet and substrate processing equipment |
| US10950483B2 (en) * | 2017-11-28 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for fixed focus ring processing |
| JP7033441B2 (en) * | 2017-12-01 | 2022-03-10 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP7145625B2 (en) | 2018-03-07 | 2022-10-03 | 東京エレクトロン株式会社 | Substrate mounting structure and plasma processing apparatus |
| JP7055040B2 (en) * | 2018-03-07 | 2022-04-15 | 東京エレクトロン株式会社 | Placement device and processing device for the object to be processed |
| JP2019220497A (en) * | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | Mounting table and plasma processing device |
| US11488808B2 (en) * | 2018-11-30 | 2022-11-01 | Tokyo Electron Limited | Plasma processing apparatus, calculation method, and calculation program |
| JP7186646B2 (en) * | 2019-03-22 | 2022-12-09 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND METHOD FOR DETECTING PRESENCE OF FOCUS RING ON PLACEMENT |
| CN112185787B (en) * | 2019-07-04 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | RF electrode assembly of plasma processing apparatus and plasma processing apparatus |
| JP7321026B2 (en) * | 2019-08-02 | 2023-08-04 | 東京エレクトロン株式会社 | EDGE RING, PLACE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD |
| JP2021040011A (en) * | 2019-09-02 | 2021-03-11 | キオクシア株式会社 | Plasma processing apparatus |
| JP7370228B2 (en) * | 2019-11-22 | 2023-10-27 | 東京エレクトロン株式会社 | plasma processing equipment |
| CN115191024A (en) * | 2020-03-05 | 2022-10-14 | 三菱综合材料株式会社 | Member for plasma processing apparatus, method for manufacturing the same, and plasma processing apparatus |
| KR20220027509A (en) * | 2020-08-27 | 2022-03-08 | 삼성전자주식회사 | Plasma processing apparatus and method for dechucking wafer in the plasma processing apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000049143A (en) * | 1998-07-28 | 2000-02-18 | Foi:Kk | Plasma treatment apparatus |
| JP2002016126A (en) * | 2000-04-25 | 2002-01-18 | Tokyo Electron Ltd | Mounting device for object |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4151749B2 (en) * | 1998-07-16 | 2008-09-17 | 東京エレクトロンＡｔ株式会社 | Plasma processing apparatus and method |
| JP4676074B2 (en) * | 2001-02-15 | 2011-04-27 | 東京エレクトロン株式会社 | Focus ring and plasma processing apparatus |
| US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
| TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
| US6896765B2 (en) * | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| CN101996843B (en) * | 2003-01-07 | 2013-05-01 | 东京毅力科创株式会社 | Plasma processing device and focusing ring |
| US7381293B2 (en) * | 2003-01-09 | 2008-06-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Convex insert ring for etch chamber |
| JP4640922B2 (en) * | 2003-09-05 | 2011-03-02 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US7658816B2 (en) * | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
| TW200520632A (en) * | 2003-09-05 | 2005-06-16 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
| KR100578129B1 (en) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | Plasma Etching Machine |
| US7988816B2 (en) * | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
| JP2007250967A (en) * | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | Plasma treating apparatus and method, and focus ring |
| JP2007258500A (en) * | 2006-03-24 | 2007-10-04 | Hitachi High-Technologies Corp | Substrate supporting device |
| JP2008078208A (en) * | 2006-09-19 | 2008-04-03 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
| JP5102500B2 (en) * | 2007-01-22 | 2012-12-19 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP5255936B2 (en) * | 2008-07-18 | 2013-08-07 | 東京エレクトロン株式会社 | Focus ring, substrate mounting table, and plasma processing apparatus including the same |
| JP5657262B2 (en) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5227264B2 (en) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, program |
| JP5690596B2 (en) * | 2011-01-07 | 2015-03-25 | 東京エレクトロン株式会社 | Focus ring and substrate processing apparatus having the focus ring |
-
2011
- 2011-03-29 JP JP2011072677A patent/JP5741124B2/en not_active Expired - Fee Related
-
2012
- 2012-03-19 TW TW101109355A patent/TWI566296B/en active
- 2012-03-28 US US13/432,623 patent/US20120247954A1/en not_active Abandoned
- 2012-03-28 KR KR1020120031835A patent/KR101910670B1/en active IP Right Grant
- 2012-03-29 CN CN201210089052.1A patent/CN102737940B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000049143A (en) * | 1998-07-28 | 2000-02-18 | Foi:Kk | Plasma treatment apparatus |
| JP2002016126A (en) * | 2000-04-25 | 2002-01-18 | Tokyo Electron Ltd | Mounting device for object |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012209359A (en) | 2012-10-25 |
| KR20120112147A (en) | 2012-10-11 |
| TW201301383A (en) | 2013-01-01 |
| CN102737940A (en) | 2012-10-17 |
| US20120247954A1 (en) | 2012-10-04 |
| KR101910670B1 (en) | 2018-10-22 |
| CN102737940B (en) | 2015-05-27 |
| JP5741124B2 (en) | 2015-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI566296B (en) | Plasma processing device | |
| US10777392B2 (en) | Substrate processing apparatus | |
| KR102430205B1 (en) | Plasma processing apparatus | |
| CN105659366B (en) | Low temperature silicon nitride films using remote plasma CVD techniques | |
| KR100757545B1 (en) | Upper electrode and plasma processing apparatus | |
| US8441772B2 (en) | Substrate for electrostatic chuck and electrostatic chuck | |
| JP5719599B2 (en) | Substrate processing equipment | |
| KR100404778B1 (en) | Vacuum processor apparatus | |
| TWI694750B (en) | Plasma treatment device | |
| TW201243942A (en) | Focus ring and plasma processing apparatus | |
| WO2002007212A1 (en) | Holding device for treated body | |
| WO2008021654A2 (en) | Exhaust assembly for a plasma processing system and method | |
| TW202300698A (en) | Plasma processing apparatus | |
| US11551916B2 (en) | Sheath and temperature control of a process kit in a substrate processing chamber | |
| JP5503503B2 (en) | Plasma processing equipment | |
| JP2022542090A (en) | Process kit sheath and temperature control | |
| TWI774308B (en) | Lid stack for high frequency processing | |
| JP2018121051A (en) | Plasma processing device | |
| US20190164727A1 (en) | Part for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus | |
| JP2006253312A (en) | Plasma processing apparatus | |
| JP7361588B2 (en) | Edge ring and substrate processing equipment | |
| CN110783260A (en) | Etching method | |
| US20230118651A1 (en) | Replaceable electrostatic chuck outer ring for edge arcing mitigation | |
| KR20230102284A (en) | Substrate processing apparatus and method | |
| TW202343631A (en) | Substrate carrying stage, substrate processing device, and method of manufacturing substrate carrying stage comprising a base, a dielectric layer, a suction electrode, a gas supply hole, a through hole and a shielding layer |