JP5741124B2 - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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JP5741124B2
JP5741124B2 JP2011072677A JP2011072677A JP5741124B2 JP 5741124 B2 JP5741124 B2 JP 5741124B2 JP 2011072677 A JP2011072677 A JP 2011072677A JP 2011072677 A JP2011072677 A JP 2011072677A JP 5741124 B2 JP5741124 B2 JP 5741124B2
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substrate
mounting table
heat transfer
ring member
plasma
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JP2012209359A (en
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山涌　純
山涌　　純
輿水　地塩
地塩 輿水
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Tokyo Electron Ltd
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Priority to US13/432,623 priority patent/US20120247954A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Description

本発明は、例えば半導体ウエハやＦＰＤ(フラットパネルディスプレイ)用のガラス基板等の基板に対してプラズマ処理を行う技術に関する。   The present invention relates to a technique for performing plasma processing on a substrate such as a semiconductor wafer or a glass substrate for an FPD (flat panel display).

半導体ウエハや、ＦＰＤ製造用のガラス基板の半導体基板の製造工程においては、基板にエッチング処理や、成膜処理等の所定のプラズマ処理を施す工程がある。これらの工程を行うプラズマ処理装置では、真空チャンバ内の載置台に基板を載置し、この載置台の上方の空間にて処理ガスをプラズマ化して、前記基板に対してプラズマ処理が行われる。また、図１５（ａ）に示すように、載置台１１上の基板例えば半導体ウエハＷ（以下「ウエハＷ」という）の周囲には、ウエハＷ上にプラズマを閉じ込めると共に、ウエハＷ面内のバイアス電位の不連続性を緩和して面内均一な処理を行うために、例えばシリコン等の導電性部材よりなる環状のフォーカスリング１２が設けられている。   In the manufacturing process of a semiconductor wafer or a semiconductor substrate of a glass substrate for manufacturing an FPD, there is a process of performing a predetermined plasma process such as an etching process or a film forming process on the substrate. In a plasma processing apparatus that performs these steps, a substrate is mounted on a mounting table in a vacuum chamber, a processing gas is converted into plasma in a space above the mounting table, and plasma processing is performed on the substrate. Further, as shown in FIG. 15A, a plasma is confined on the wafer W around a substrate on the mounting table 11 such as a semiconductor wafer W (hereinafter referred to as “wafer W”), and a bias in the wafer W plane is provided. An annular focus ring 12 made of a conductive member such as silicon is provided to alleviate the potential discontinuity and perform uniform in-plane processing.

前記載置台１１には図示しない温調流路が設けられ、プラズマからの入熱と、載置台１１側への放熱とのバランスにより、ウエハＷが所定温度に調整された状態でプラズマ処理が行われる。一方、フォーカスリング１２は熱的に浮いている状態でプラズマに曝されるため、ウエハＷよりも温度が高い状態になる。ところで、ラジカル種や反応副生成物は低温の部位に付着してポリマー（堆積物）を形成するが、既述のように、フォーカスリング１２よりもウエハＷの方が低温であるため、ウエハＷのエッジ部にポリマー１３が形成されやすい。このポリマー１３はプラズマイオンによるスパッタによって除去されるものの、ウエハＷの裏面に形成されたポリマー１３にはプラズマが照射されず、このスパッタによる除去は期待できない。   The mounting table 11 is provided with a temperature control channel (not shown), and plasma processing is performed in a state where the wafer W is adjusted to a predetermined temperature by a balance between heat input from the plasma and heat radiation to the mounting table 11 side. Is called. On the other hand, since the focus ring 12 is exposed to the plasma in a state of being thermally floating, the temperature is higher than that of the wafer W. By the way, radical species and reaction by-products adhere to a low temperature site to form a polymer (deposit). However, since the wafer W is cooler than the focus ring 12 as described above, the wafer W The polymer 13 is likely to be formed at the edge portion. Although the polymer 13 is removed by sputtering with plasma ions, the polymer 13 formed on the back surface of the wafer W is not irradiated with plasma, and removal by this sputtering cannot be expected.

前記ポリマーを除去する手法として、特許文献１及び特許文献２に、フォーカスリングの下に絶縁物を挿入することにより、ウエハＷとフォーカスリング間の電位差を制御する構成が提案されている。この構成では、図１５（ｂ）に示すように、絶縁物１４によりウエハＷとフォーカスリング１２との間の電位差を調整し、入射してくるプラズマイオンの軌道を変えてウエハＷ裏面へプラズマイオンを導き、こうして前記ポリマー１３をスパッタにより除去している。   As a technique for removing the polymer, Patent Documents 1 and 2 propose a configuration in which an electric potential difference between the wafer W and the focus ring is controlled by inserting an insulator under the focus ring. In this configuration, as shown in FIG. 15B, the potential difference between the wafer W and the focus ring 12 is adjusted by the insulator 14, and the trajectory of the incident plasma ions is changed, so that the plasma ions are transferred to the back surface of the wafer W. Thus, the polymer 13 is removed by sputtering.

これらの構成によれば、ウエハＷ裏面に付着したポリマーを除去することができるが、フォーカスリング１２の温度を制御することができないため、ウエハＷ裏面周縁部へのポリマーの付着自体を抑制することはできない。また、条件によっては、ウエハＷに付着したポリマーを完全に除去できないことも想定される。この場合、後工程にて例えばバッチ洗浄等でポリマーを剥離することが行われるが、洗浄液を介してデバイス表面に付着し、欠陥の原因になるおそれがある。さらに、１つのロットのウエハＷに処理を行っている間に、プラズマの照射によってフォーカスリング１２の温度が上昇し、この温度変化によりウエハＷ裏面側へ回り込むプラズマイオンの軌道が変化して、安定したポリマーの除去を行うことができない懸念もある。   According to these configurations, the polymer attached to the back surface of the wafer W can be removed, but the temperature of the focus ring 12 cannot be controlled, so that the adhesion of the polymer to the peripheral portion of the back surface of the wafer W is suppressed. I can't. In addition, depending on conditions, it is assumed that the polymer attached to the wafer W cannot be completely removed. In this case, the polymer is peeled off by, for example, batch cleaning in a later step, but it may adhere to the device surface via the cleaning liquid and cause defects. Further, while the wafer W of one lot is being processed, the temperature of the focus ring 12 rises due to the plasma irradiation, and this temperature change changes the trajectory of the plasma ions that go around to the back side of the wafer W, thereby stabilizing the process. There is also a concern that the polymer removal cannot be performed.

また、特許文献３には、フォーカスリングと電極ブロックとの間に、第１の熱伝達媒体と誘電体リングと第２の熱伝達媒体と絶縁部材とを上下方向に積層して設けることにより、ウエハベベル部への堆積物の付着を抑える技術が提案されている。この構成では、誘電体リングにより、フォーカスリング前面に形成されるシースにかかる電圧を抑制することによってフォーカスリングへの入熱を抑制すると共に、第１及び第２の熱伝達媒体によりフォーカスリングからの熱を電極ブロックに伝えている。こうして、フォーカスリングの温度をウエハよりも低くして、ウエハベベル部への堆積物の付着を抑えている。   In Patent Document 3, a first heat transfer medium, a dielectric ring, a second heat transfer medium, and an insulating member are stacked in the vertical direction between the focus ring and the electrode block. Techniques have been proposed for suppressing deposits from adhering to the wafer bevel. In this configuration, the dielectric ring suppresses the voltage applied to the sheath formed on the front surface of the focus ring, thereby suppressing heat input to the focus ring, and the first and second heat transfer media from the focus ring. Heat is transferred to the electrode block. In this way, the temperature of the focus ring is made lower than that of the wafer to suppress the adhesion of deposits to the wafer bevel portion.

ここで、絶縁体と熱伝導体とを積層構造にすると、熱伝導体と絶縁体との接触面に気泡が混入しやすいが、この気泡の存在により、絶縁体とフォーカスリングとの間の接触状態が変化し、フォーカスリングの面内において均一に伝熱することが困難になる。また、ウエハの裏面側に付着したポリマーのスパッタ除去は、ウエハのエッジ部分とフォーカスリングとの間の電位差により実現されるため、フォーカスリングの下方に設けられた絶縁体による微妙なインピーダンス制御が要求されるが、絶縁体とフォーカスリングとの間の気泡の存在により両者の接触状態が変化により、前記インピーダンス制御にも悪影響を及ぼすおそれもある。さらに、絶縁体と熱伝導体とを積層構造にすると、熱伝導体が変形したり、熱伝導体と絶縁体との間に気泡が混入したりして、フォーカスリングの周縁部が下方側に傾きやすく、フォーカスリングの高さ管理が困難となり、ウエハ周縁のプラズマ状態の制御が不安定になってしまう。   Here, when the insulator and the heat conductor are laminated, bubbles are likely to be mixed into the contact surface between the heat conductor and the insulator. However, the presence of the bubbles causes the contact between the insulator and the focus ring. The state changes and it becomes difficult to transfer heat uniformly in the plane of the focus ring. In addition, the spatter removal of the polymer adhering to the back side of the wafer is realized by a potential difference between the edge portion of the wafer and the focus ring, so that delicate impedance control by an insulator provided below the focus ring is required. However, due to the presence of bubbles between the insulator and the focus ring, the contact state between the two changes, which may adversely affect the impedance control. Furthermore, when the insulator and the heat conductor are laminated, the heat conductor may be deformed or bubbles may be mixed between the heat conductor and the insulator, so that the peripheral edge of the focus ring is on the lower side. It is easy to tilt, it becomes difficult to manage the height of the focus ring, and the control of the plasma state at the periphery of the wafer becomes unstable.

特開２００５−２７７３６９号公報（図１、図２）Japanese Patent Laying-Open No. 2005-277369 (FIGS. 1 and 2) 特開２００７−２５０９６７号公報（図１、図２）JP 2007-250967 A (FIGS. 1 and 2) 特開２００７−２５８５００号公報（図１、段落００３０〜００３５）JP 2007-258500 A (FIG. 1, paragraphs 0030 to 0035)

本発明は、このような事情の下になされたものであり、その目的は、リング部材の温度を制御することにより、基板裏面への堆積物の付着量を抑えることができる技術を提供することにある。   The present invention has been made under such circumstances, and an object thereof is to provide a technique capable of suppressing the amount of deposits attached to the back surface of the substrate by controlling the temperature of the ring member. It is in.

このため、本発明のプラズマ処理装置は、真空容器内に設けられた下部電極を兼用する載置台の基板載置領域に基板を載置すると共に、前記下部電極と上部電極との間に高周波電力を印加して処理ガスをプラズマ化し、基板にプラズマ処理を施すプラズマ処理装置において、
前記基板載置領域を囲むように前記載置台上に設けられ、プラズマの状態を調整するための導電性のリング部材と、
前記載置台の上面と前記リング部材の下面との間にて当該リング部材に沿って、前記載置台上の基板の中心に対して同心円状に設けられ、基板の裏面側にプラズマ中のイオンを引き込むように当該リング部材と基板との電位差を調整するための絶縁部材と、
この絶縁部材に対して基板の径方向に隣接する位置であって、前記載置台の上面と前記リング部材の下面との間に当該上面及び下面に密着してかつ当該リング部材に沿って設けられた、前記絶縁部材とは別体の伝熱部材と、を備えたことを特徴とする。 For this reason, the plasma processing apparatus of the present invention places a substrate on a substrate placement region of a placement table that also serves as a lower electrode provided in a vacuum vessel, and high-frequency power between the lower electrode and the upper electrode. In a plasma processing apparatus that applies a plasma to process gas and applies plasma processing to the substrate,
A conductive ring member provided on the mounting table to surround the substrate mounting region, and for adjusting a plasma state;
Along the ring member between the upper surface of the mounting table and the lower surface of the ring member, a concentric circle is provided with respect to the center of the substrate on the mounting table. An insulating member for adjusting the potential difference between the ring member and the substrate so as to be pulled in;
It is a position adjacent to the insulating member in the radial direction of the substrate, and is provided in close contact with the upper surface and the lower surface between the upper surface of the mounting table and the lower surface of the ring member and along the ring member. And a heat transfer member separate from the insulating member .

また、本発明の他のプラズマ処理装置は、真空容器内に設けられた下部電極を兼用する載置台の基板載置領域に基板を載置すると共に、前記下部電極と上部電極との間に高周波電力を印加して処理ガスをプラズマ化し、基板にプラズマ処理を施すプラズマ処理装置において、
前記基板載置領域を囲むように前記載置台上に設けられ、プラズマの状態を調整するための導電性のリング部材と、
前記載置台の上面と前記リング部材の下面との間にて当該リング部材に沿って、前記載置台上の基板の中心に対して同心円状に設けられ、基板の裏面側にプラズマ中のイオンを引き込むように当該リング部材と基板との電位差を調整するための絶縁部材と、
この絶縁部材と載置台の上面との間にて両者に密着し、各々リング部材に沿って、前記載置台上の基板の中心に対して同心円状にかつ互いにリング部材の径方向に離間して設けられた、前記絶縁部材とは別体の複数の下側伝熱部材と、
前記絶縁部材とリング部材の下面との間にて両者に密着し、各々リング部材に沿って、前記載置台上の基板の中心に対して同心円状にかつ互いにリング部材の径方向に離間して設けられた、前記絶縁部材とは別体の複数の上側伝熱部材と、を備えたことを特徴とする。
更にまた本発明の他のプラズマ処理装置は、真空容器内に設けられた下部電極を兼用する載置台の基板載置領域に基板を載置すると共に、前記下部電極と上部電極との間に高周波電力を印加して処理ガスをプラズマ化し、基板にプラズマ処理を施すプラズマ処理装置において、
前記基板載置領域を囲むように前記載置台上に設けられ、プラズマの状態を調整するための導電性のリング部材と、
前記載置台の上面と前記リング部材の下面との間にて当該リング部材に沿って、前記載置台上の基板の中心に対して同心円状に設けられ、基板の裏面側にプラズマ中のイオンを引き込むように当該リング部材と基板との電位差を調整するための絶縁部材と、
前記リング部材の外側面と絶縁部材の外側面と載置台の側面との間に、これら側面に密着して、かつ当該リング部材に沿って設けられた、前記絶縁部材とは別体の伝熱部材と、を備えたことを特徴とする。

In another plasma processing apparatus of the present invention, a substrate is placed on a substrate placement region of a placement table also serving as a lower electrode provided in a vacuum vessel, and a high frequency is provided between the lower electrode and the upper electrode. In a plasma processing apparatus that applies power to plasmaize a processing gas and performs plasma processing on a substrate,
A conductive ring member provided on the mounting table to surround the substrate mounting region, and for adjusting a plasma state;
Along the ring member between the upper surface of the mounting table and the lower surface of the ring member, a concentric circle is provided with respect to the center of the substrate on the mounting table. An insulating member for adjusting the potential difference between the ring member and the substrate so as to be pulled in;
The insulating member and the upper surface of the mounting table are in close contact with each other, respectively, along the ring member, concentrically with respect to the center of the substrate on the mounting table and spaced apart from each other in the radial direction of the ring member. A plurality of lower heat transfer members provided separately from the insulating member ;
The insulating member and the lower surface of the ring member are in close contact with each other, and are respectively concentric with the center of the substrate on the mounting table and spaced apart from each other in the radial direction of the ring member along the ring member. A plurality of upper heat transfer members provided separately from the insulating member are provided.
Furthermore, another plasma processing apparatus of the present invention places a substrate on a substrate placement region of a placement table also serving as a lower electrode provided in a vacuum vessel, and has a high frequency between the lower electrode and the upper electrode. In a plasma processing apparatus that applies power to plasmaize a processing gas and performs plasma processing on a substrate,
A conductive ring member provided on the mounting table to surround the substrate mounting region, and for adjusting a plasma state;
Along the ring member between the upper surface of the mounting table and the lower surface of the ring member, a concentric circle is provided with respect to the center of the substrate on the mounting table. An insulating member for adjusting the potential difference between the ring member and the substrate so as to be pulled in;
Heat transfer separate from the insulating member, which is provided between the outer surface of the ring member, the outer surface of the insulating member, and the side surface of the mounting table, in close contact with the side surface and along the ring member. And a member.

本発明によれば、リング部材と載置台との間に伝熱部材と絶縁部材とを設けているので、プラズマ照射の際のリング部材の温度上昇を抑えることができ、基板への堆積物の付着を抑えることができる。また、基板に堆積物が付着しても、リング部材の温度変化による基板裏面側へ回り込むプラズマイオンの軌道の乱れが抑えられるため、基板裏面の堆積物のスパッタによる除去を安定して行うことができ、基板裏面への堆積物の付着量を低減することができる。   According to the present invention, since the heat transfer member and the insulating member are provided between the ring member and the mounting table, the temperature rise of the ring member during plasma irradiation can be suppressed, and the deposit on the substrate can be suppressed. Adhesion can be suppressed. In addition, even if deposits adhere to the substrate, the disturbance of the plasma ion trajectory that goes around to the back side of the substrate due to the temperature change of the ring member can be suppressed, so that the deposit on the back side of the substrate can be stably removed by sputtering. In addition, the amount of deposits attached to the back surface of the substrate can be reduced.

本発明にかかるプラズマエッチング装置の第１の実施の形態を示す縦断側面図である。It is a vertical side view which shows 1st Embodiment of the plasma etching apparatus concerning this invention. 前記プラズマエッチング装置に設けられた載置台の一部を示す縦断面図である。It is a longitudinal cross-sectional view which shows a part of mounting base provided in the said plasma etching apparatus. 前記載置台の平面図及び縦断面図である。It is the top view and longitudinal cross-sectional view of the mounting table mentioned above. 本発明の作用を説明するための縦断面図である。It is a longitudinal cross-sectional view for demonstrating the effect | action of this invention. 本発明の第１の実施の形態の他の例を示す縦断面図である。It is a longitudinal cross-sectional view which shows the other example of the 1st Embodiment of this invention. 本発明のプラズマエッチング装置の第２の実施の形態を示す縦断面図である。It is a longitudinal cross-sectional view which shows 2nd Embodiment of the plasma etching apparatus of this invention. 図６のプラズマエッチング装置に設けられる載置台を示す平面図である。It is a top view which shows the mounting base provided in the plasma etching apparatus of FIG. 本発明の第２の実施の形態の他の例の載置台を示す平面図である。It is a top view which shows the mounting base of the other example of the 2nd Embodiment of this invention. 本発明の第２の実施の形態のさらに他の例の載置台を示す平面図である。It is a top view which shows the mounting base of the further another example of the 2nd Embodiment of this invention. 本発明の第２の実施の形態のさらに他の例の載置台を示す平面図及び縦断面図である。It is the top view and longitudinal cross-sectional view which show the mounting base of the further another example of the 2nd Embodiment of this invention. 本発明のプラズマエッチング装置の第３の実施の形態を示す平面図及び部分斜視図である。It is the top view and partial perspective view which show 3rd Embodiment of the plasma etching apparatus of this invention. 本発明のプラズマエッチング装置のさらに他の例の載置台を示す縦断面図である。It is a longitudinal cross-sectional view which shows the mounting base of the further another example of the plasma etching apparatus of this invention. 本発明のプラズマエッチング装置のさらに他の例の載置台を示す縦断面図である。It is a longitudinal cross-sectional view which shows the mounting base of the further another example of the plasma etching apparatus of this invention. 本発明の効果を確認するために行った実施例を示す特性図である。It is a characteristic view which shows the Example performed in order to confirm the effect of this invention. 従来の載置台を示す縦断面図である。It is a longitudinal cross-sectional view which shows the conventional mounting base.

以下に本発明に係る容量結合型のプラズマエッチング装置の一実施の形態について説明する。図１はこのプラズマエッチング装置２を示す縦断面図であり、このプラズマエッチング装置２は、その内部においてウエハＷにプラズマ処理を施すための、例えばアルミニウムからなる気密な処理容器（真空容器）２０を備えている。この処理容器２０の底部の中央部には載置台３が設けられている。この載置台３は、円柱体の上面部の周縁部が全周に亘って切り欠かれていて、段部３１が形成された形状、即ち上面部において、周縁部以外の部分が円柱状に突出した形状に構成されている。この突出した部位は、基板であるウエハＷが載置される基板載置領域３２（以下「載置領域」という）をなすものであり、この載置領域３２を囲む段部３１は、後述のリング部材の配置領域に相当する。   An embodiment of a capacitively coupled plasma etching apparatus according to the present invention will be described below. FIG. 1 is a longitudinal sectional view showing the plasma etching apparatus 2. The plasma etching apparatus 2 includes an airtight processing container (vacuum container) 20 made of, for example, aluminum for performing plasma processing on the wafer W therein. I have. A mounting table 3 is provided at the center of the bottom of the processing container 20. The mounting table 3 has a shape in which a peripheral portion of the upper surface portion of the cylindrical body is cut out over the entire periphery, and a step portion 31 is formed, that is, a portion other than the peripheral portion protrudes in a cylindrical shape on the upper surface portion. It is configured in the shape. The protruding portion forms a substrate placement area 32 (hereinafter referred to as “placement area”) on which a wafer W as a substrate is placed, and a step portion 31 surrounding the placement area 32 is described later. This corresponds to the arrangement area of the ring member.

この載置領域３２の上面部には絶縁膜にチャック電極３３ａを配置してなる静電チャック３３が設けられており、この静電チャック３３上にウエハＷがその周縁部が突出した状態で載置される。前記チャック電極３３ａは処理容器２０の外に設けられた直流電源３４とスイッチ３５を介して電気的に接続されている。また、静電チャック３３には図示しない複数の吐出口が穿設されており、図示しないガス供給部から、当該静電チャック３３とウエハＷとの間の微小空間に、熱媒体ガス例えばＨｅガスが供給されるようになっている。また、載置台３の内部には図示しない昇降ピンが設けられており、図示しない外部の搬送アームと静電チャック３３との間でウエハＷの受け渡しが行われるように構成されている。   An electrostatic chuck 33 in which a chuck electrode 33a is disposed on an insulating film is provided on the upper surface portion of the mounting region 32, and the wafer W is mounted on the electrostatic chuck 33 with its peripheral edge protruding. Placed. The chuck electrode 33 a is electrically connected to a DC power source 34 provided outside the processing container 20 via a switch 35. The electrostatic chuck 33 is provided with a plurality of discharge ports (not shown), and a heating medium gas such as He gas is supplied from a gas supply unit (not shown) into a minute space between the electrostatic chuck 33 and the wafer W. Is to be supplied. Further, a lifting pin (not shown) is provided inside the mounting table 3, and the wafer W is transferred between an external transfer arm (not shown) and the electrostatic chuck 33.

載置台３の内部には冷媒通流室３６が設けられており、載置台３の外部に設けられた冷媒供給部３７から冷媒が循環供給されるようになっている。つまり、冷媒供給部３７から供給路３６ａを介して冷媒通流室３６に供給された冷媒は、排出路３６ｂを介して載置台３外部へ排出され、冷媒供給部３７にてチラーにより所定温度まで冷却された後、再び供給路３６ａを介して冷媒通流室３６に供給される。また、載置台３は下部電極を兼用しており、高周波電源部３８に整合器３９を介して接続されている。この高周波電源部３８は、プラズマ中のイオンを引き込むためのバイアスを下部電極に印加するためのバイアス電源である。   A refrigerant flow chamber 36 is provided inside the mounting table 3, and refrigerant is circulated and supplied from a refrigerant supply unit 37 provided outside the mounting table 3. That is, the refrigerant supplied from the refrigerant supply unit 37 to the refrigerant flow chamber 36 through the supply path 36 a is discharged to the outside of the mounting table 3 through the discharge path 36 b, and reaches the predetermined temperature by the chiller at the refrigerant supply unit 37. After cooling, the refrigerant is again supplied to the refrigerant flow chamber 36 through the supply path 36a. The mounting table 3 also serves as a lower electrode, and is connected to the high frequency power supply unit 38 via a matching unit 39. The high frequency power supply unit 38 is a bias power supply for applying a bias for attracting ions in the plasma to the lower electrode.

一方、処理容器２０の天井部には、絶縁部材２１を介して前記載置領域３２に対向するようにシャワーヘッド４が設けられており、このシャワーヘッド４は供給路４２を介してガス供給系４１に接続されている。当該シャワーヘッド４の内部にはバッファ室４３が形成されると共に、その下面には多数の吐出口４４が穿設されており、ガス供給系４１からバッファ室４３に供給された処理ガスは、吐出口４４を介して載置領域３２側に向けて吐出されるように構成されている。また、シャワーヘッド４は上部電極を兼用しており、整合器４５を介してプラズマ生成用の高周波電源部４６に接続されている。   On the other hand, the shower head 4 is provided on the ceiling portion of the processing container 20 so as to face the placement area 32 with the insulating member 21 interposed therebetween. The shower head 4 is connected to the gas supply system via the supply path 42. 41. A buffer chamber 43 is formed inside the shower head 4, and a number of discharge ports 44 are formed in the lower surface thereof, so that the processing gas supplied from the gas supply system 41 to the buffer chamber 43 is discharged. It is configured to be discharged toward the placement region 32 through the outlet 44. The shower head 4 also serves as an upper electrode, and is connected to a high frequency power source 46 for plasma generation via a matching unit 45.

さらに、処理容器２０の底部には排気ポート２２が設けられており、この排気ポート２２には、バルブＶ及び圧力調整部２３が介設された排気路２４を介して真空排気機構である真空ポンプ２５が接続されている。また、処理容器２０の側壁には、シャッタ２６により開閉可能なウエハＷの搬送口２７が設けられている。   Further, an exhaust port 22 is provided at the bottom of the processing vessel 20, and a vacuum pump as a vacuum exhaust mechanism is connected to the exhaust port 22 through an exhaust path 24 in which a valve V and a pressure adjusting unit 23 are interposed. 25 is connected. Further, a transfer port 27 for the wafer W that can be opened and closed by a shutter 26 is provided on the side wall of the processing container 20.

前記載置台３の上面の周縁部に形成された段部３１の底面（段面）には、図２及び図３に示すように、絶縁部材６及び伝熱部材７を介してフォーカスリング５が設けられている。このフォーカスリング５は、載置領域３２を囲むように、載置台３上に設けられ、プラズマの状態を調整するためのリング部材をなすものであり、例えばシリコン等の導電性部材により構成されている。このフォーカスリング５の内周縁は、全周に亘って切り欠かれて段部５１が形成されており、ウエハＷの載置領域３２から突出した周縁部が、このフォーカスリング５の段部５１に収まるようになっている。また、載置領域３２の外周面３２ａと、フォーカスリング５の段部５１の下部側の内周面５２との間には、僅かに隙間が形成されるように載置領域３２及びフォーカスリング５の形状が設定されている。こうして、ウエハＷを載置領域３２に載置すると、フォーカスリング５が、ウエハＷの周縁部の裏面側から側方を囲むように設けられることになる。   As shown in FIGS. 2 and 3, the focus ring 5 is interposed on the bottom surface (step surface) of the step portion 31 formed on the peripheral edge of the top surface of the mounting table 3 via the insulating member 6 and the heat transfer member 7. Is provided. The focus ring 5 is provided on the mounting table 3 so as to surround the mounting region 32, and forms a ring member for adjusting the plasma state, and is made of a conductive member such as silicon. Yes. An inner peripheral edge of the focus ring 5 is cut out over the entire periphery to form a stepped portion 51, and a peripheral portion protruding from the mounting region 32 of the wafer W is formed on the stepped portion 51 of the focus ring 5. It comes to fit. Further, the mounting region 32 and the focus ring 5 are formed so that a slight gap is formed between the outer peripheral surface 32 a of the mounting region 32 and the inner peripheral surface 52 on the lower side of the step portion 51 of the focus ring 5. The shape is set. Thus, when the wafer W is placed on the placement region 32, the focus ring 5 is provided so as to surround the side from the back side of the peripheral edge of the wafer W.

また、前記載置台３の段部３１とフォーカスリング５の下面との間には、絶縁部材６と伝熱部材７とが載置台３上のウエハＷの径方向に並ぶように設けられている。前記絶縁部材６は、図２及び図３に示すように、載置台３の上面とフォーカスリング５の下面との間にて、フォーカスリング５に沿って、載置台３上のウエハＷの中心に対して同心円状に設けられており、前記ウエハＷの裏面側にプラズマ中のイオンを引き込むように当該フォーカスリングとウエハＷとの電位差を調整する役割を果たす。この例の絶縁部材６はリング状に構成され、フォーカスリング５の下面に接触すると共に、フォーカスリング５の段部５１の下部側の内周面５２と、載置台３の載置領域３２の外周面３２ａとの間の隙間を埋めるように設けられている。この絶縁部材６は、石英以外に、例えば二酸化ケイ素（ＳｉＯ２）や、セラミックス、窒化アルミニウム（ＡｌＮ）、サファイア等により構成することができる。 An insulating member 6 and a heat transfer member 7 are provided between the step portion 31 of the mounting table 3 and the lower surface of the focus ring 5 so as to be aligned in the radial direction of the wafer W on the mounting table 3. . As shown in FIGS. 2 and 3, the insulating member 6 is positioned between the upper surface of the mounting table 3 and the lower surface of the focus ring 5 along the focus ring 5 and at the center of the wafer W on the mounting table 3. On the other hand, they are provided concentrically, and play a role of adjusting the potential difference between the focus ring and the wafer W so as to attract ions in the plasma to the back side of the wafer W. The insulating member 6 in this example is configured in a ring shape, contacts the lower surface of the focus ring 5, and has an inner peripheral surface 52 on the lower side of the step portion 51 of the focus ring 5 and an outer periphery of the mounting region 32 of the mounting table 3. It is provided so as to fill a gap between the surface 32a. In addition to quartz, the insulating member 6 can be made of, for example, silicon dioxide (SiO 2 ), ceramics, aluminum nitride (AlN), sapphire, or the like.

また、前記伝熱部材７は、絶縁部材６に対して載置台３上のウエハＷの径方向に隣接する位置であって、前記載置台３の上面と前記フォーカスリング５の下面との間に、当該上面及び下面に密着してかつフォーカスリング５に沿って設けられている。この例では、伝熱部材７は、絶縁部材６に対して前記ウエハＷの径方向外側に設けられている。この伝熱部材７は、フォーカスリング５を冷却して、ウエハＷへのラジカル種や反応副生成物等の付着の抑制効果が顕著となる程度の伝熱性が得られるものであり、この例では熱伝導性の高い材料である、アルミナを充填した高分子シリコンゲルにより構成されている。また、伝熱部材７は、前記高分子シリコンゲル以外に、シリコン系樹脂、カーボン系樹脂やフッ素系樹脂等の熱伝導係数が高い材料で構成することができる。   The heat transfer member 7 is positioned adjacent to the insulating member 6 in the radial direction of the wafer W on the mounting table 3, and between the upper surface of the mounting table 3 and the lower surface of the focus ring 5. , In close contact with the upper and lower surfaces and along the focus ring 5. In this example, the heat transfer member 7 is provided on the radially outer side of the wafer W with respect to the insulating member 6. This heat transfer member 7 cools the focus ring 5 and obtains heat transfer to such an extent that the effect of suppressing the adhesion of radical species, reaction byproducts, etc. to the wafer W is significant. In this example, It is composed of a polymer silicon gel filled with alumina, which is a material with high thermal conductivity. The heat transfer member 7 can be made of a material having a high thermal conductivity coefficient, such as a silicon-based resin, a carbon-based resin, and a fluorine-based resin, in addition to the polymer silicon gel.

この例では、絶縁部材６の上面は、伝熱部材７の上面の高さと揃えられるように構成され、これら前記絶縁部材６と伝熱部材７の上にフォーカスリング５を載置することにより、石英製の絶縁部材６により高さが規制された状態でフォーカスリング５が載置台３の段部３１上に設けられる。この際、伝熱部材７として、粘着性の弾性体よりなるアルミナを充填した高分子シリコンゲルを用いているので、その粘着性により伝熱部材７とフォーカスリング５との間、及び伝熱部材７と載置台３の段部３１との間の密着性が確保される。また、フォーカスリング５が絶縁部材６と伝熱部材７の上に設けられたときに、ウエハＷとフォーカスリング５との電位差を所定の範囲に調整し、かつフォーカスリング５が左右方向（載置台３上のウエハＷの径方向）に傾かないように、上下方向の大きさ（高さＬ１）や、左右方向の大きさ（幅Ｌ２、Ｌ３）が夫々設定される。   In this example, the upper surface of the insulating member 6 is configured to be aligned with the height of the upper surface of the heat transfer member 7, and by placing the focus ring 5 on the insulating member 6 and the heat transfer member 7, The focus ring 5 is provided on the step portion 31 of the mounting table 3 in a state where the height is regulated by the quartz insulating member 6. At this time, since the polymer silicon gel filled with alumina made of an adhesive elastic body is used as the heat transfer member 7, the heat transfer member 7 and the focus ring 5, and the heat transfer member due to the adhesive property. 7 and the step 31 of the mounting table 3 are secured. Further, when the focus ring 5 is provided on the insulating member 6 and the heat transfer member 7, the potential difference between the wafer W and the focus ring 5 is adjusted to a predetermined range, and the focus ring 5 is moved in the left-right direction (mounting table). 3, the size in the vertical direction (height L1) and the size in the left-right direction (widths L2 and L3) are set so as not to incline in the radial direction of the wafer W on 3.

前記プラズマエッチング装置２は制御部１００により制御されるように構成されている。この制御部１００は例えばコンピュータからなり、プログラム、メモリ、ＣＰＵを備えている。前記プログラムには制御部１００からプラズマエッチング装置２の各部に制御信号を送り、所定のエッチング処理を進行させるように命令（各ステップ）が組み込まれている。このプログラムは、コンピュータ記憶媒体例えばフレキシブルディスク、コンパクトディスク、ハードディスク、ＭＯ（光磁気ディスク）等の記憶部に格納されて制御部１００にインストールされる。   The plasma etching apparatus 2 is configured to be controlled by the control unit 100. The control unit 100 is formed of a computer, for example, and includes a program, a memory, and a CPU. In the program, a command (each step) is incorporated so that a control signal is sent from the control unit 100 to each part of the plasma etching apparatus 2 to advance a predetermined etching process. This program is stored in a storage unit such as a computer storage medium such as a flexible disk, a compact disk, a hard disk, or an MO (magneto-optical disk) and installed in the control unit 100.

ここで前記プログラムには、静電チャック３３のスイッチ３５、高周波電源部３８，４６のオン、オフ、ガス供給系４１による処理ガスの供給開始及び供給停止、真空ポンプ２５のバルブＶの開閉等を制御するためのプログラムも含まれており、制御部１００のメモリに予め記憶されたプロセスレシピに応じて、前記各部が制御されるようになっている。   Here, the program includes switching on and off the switch 35 of the electrostatic chuck 33 and the high frequency power supply units 38 and 46, starting and stopping the supply of the processing gas by the gas supply system 41, opening and closing of the valve V of the vacuum pump 25, and the like. A program for control is also included, and the respective units are controlled in accordance with a process recipe stored in advance in the memory of the control unit 100.

続いて、上述のプラズマエッチング装置２の作用について説明する。先ず、シャッタ２６を開き、図示しない真空搬送室から図示しない搬送アームにより、搬送口２７を介して、ウエハＷが処理容器２０内に搬入される。そして、ウエハＷは、図示しない昇降ピンと前記搬送アームとの協働作業により、静電チャック３３上に受け渡され、吸着保持される。次いで、シャッタ２６を閉じた後、真空ポンプ２５により処理容器２０内を真空排気しながら、ガス供給系４１からシャワーヘッド４を介して所定の処理ガス（エッチングガス）を供給する。   Then, the effect | action of the above-mentioned plasma etching apparatus 2 is demonstrated. First, the shutter 26 is opened, and a wafer W is loaded into the processing container 20 from a vacuum transfer chamber (not shown) by a transfer arm (not shown) via the transfer port 27. Then, the wafer W is transferred onto the electrostatic chuck 33 by the cooperative operation of the lift pins (not shown) and the transfer arm, and is attracted and held. Next, after the shutter 26 is closed, a predetermined processing gas (etching gas) is supplied from the gas supply system 41 through the shower head 4 while the processing chamber 20 is evacuated by the vacuum pump 25.

一方、高周波電源部４６からシャワーヘッド４にプラズマ発生用の高周波電力を供給すると共に、高周波電源部３８から載置台３にバイアス用の高周波電力を供給してプラズマを発生させ、このプラズマによりウエハＷに対してエッチング処理を行う。   On the other hand, high frequency power for plasma generation is supplied from the high frequency power supply unit 46 to the shower head 4 and high frequency power for bias is supplied from the high frequency power supply unit 38 to the mounting table 3 to generate plasma. Etching is performed on the substrate.

プラズマ処理の間、載置台３上のウエハＷはプラズマに曝されるため、プラズマから入熱するが、既述のように、載置台３は冷媒の循環により冷却され、予め設定された基準温度に維持されているので、ウエハＷの熱がＨｅガスを介して載置台３に放熱されていく。従って、ウエハＷは、プラズマの入熱と載置台３に放熱される作用との熱バランスにより、所定の温度に維持される。   During the plasma processing, the wafer W on the mounting table 3 is exposed to the plasma, so heat is input from the plasma. As described above, the mounting table 3 is cooled by the circulation of the refrigerant, and is set at a preset reference temperature. Therefore, the heat of the wafer W is radiated to the mounting table 3 through the He gas. Therefore, the wafer W is maintained at a predetermined temperature by the heat balance between the heat input of the plasma and the action of radiating heat to the mounting table 3.

また、フォーカスリング５もプラズマに曝されることにより、プラズマから入熱するが、フォーカスリング５は熱伝導性の高い伝熱部材７を介して載置台３上に設けられており、伝熱部材７の粘着性によりフォーカスリング５の下面と伝熱部材７の上面、伝熱部材７の下面と載置台３の上面とが夫々密着しているので、フォーカスリング５の熱は、図４に示すように、伝熱部材７を介して載置台３に速やかに伝熱されていく。こうして、伝熱部材７により、後述の実施例から明らかなように、プラズマ処理の間においてフォーカスリング５が冷却されて、載置台３上のウエハＷとフォーカスリング５との温度差がなくなる。この結果、ウエハＷの裏面側周縁部へラジカル種や反応副生成物が選択的に進入していくことが抑えられる。このように、プラズマ処理中においてフォーカスリング５が冷却され、載置台３上のウエハＷとフォーカスリング５との温度差がなくなるので、ウエハＷへのラジカル種や反応副生成物の付着の抑制効果が顕著となる。   Further, the focus ring 5 also receives heat from the plasma by being exposed to the plasma, but the focus ring 5 is provided on the mounting table 3 via the heat transfer member 7 having high thermal conductivity. 4, the bottom surface of the focus ring 5 and the top surface of the heat transfer member 7 are in close contact with each other, and the bottom surface of the heat transfer member 7 and the top surface of the mounting table 3 are in close contact with each other. As described above, heat is quickly transferred to the mounting table 3 via the heat transfer member 7. In this way, the heat transfer member 7 cools the focus ring 5 during the plasma processing, and the temperature difference between the wafer W on the mounting table 3 and the focus ring 5 is eliminated, as will be apparent from the following embodiments. As a result, the radical species and reaction by-products can be prevented from selectively entering the peripheral edge of the back surface of the wafer W. As described above, the focus ring 5 is cooled during the plasma processing, and the temperature difference between the wafer W on the mounting table 3 and the focus ring 5 is eliminated. Therefore, the effect of suppressing the adhesion of radical species and reaction byproducts to the wafer W is achieved. Becomes prominent.

さらに、絶縁部材６によりフォーカスリング５の電位が調整され、フォーカスリング５の電位よりもウエハＷの電位の方が低くなるように（負に大きくなるように）、フォーカスリング５とウエハＷとの電位差が調整されるので、プラズマ中のイオンがウエハＷに引き込まれる。これにより、図４に示すように、ウエハＷ裏面側へ回り込むようにプラズマ中のイオンの軌道が制御され、ウエハＷ裏面に前記ポリマーが形成されたとしても、このポリマーがスパッタにより除去される。また、絶縁部材６にもプラズマが照射されるが、このプラズマのスパッタにより、石英より構成された絶縁部材６からＯラジカルが生成され、このＯラジカルによっても、前記ウエハＷ裏面に形成されるポリマーが除去される。   Further, the potential of the focus ring 5 is adjusted by the insulating member 6 so that the potential of the wafer W is lower than the potential of the focus ring 5 (so as to be negatively increased). Since the potential difference is adjusted, ions in the plasma are drawn into the wafer W. As a result, as shown in FIG. 4, the trajectory of ions in the plasma is controlled so as to go around to the back side of the wafer W, and even if the polymer is formed on the back side of the wafer W, the polymer is removed by sputtering. The insulating member 6 is also irradiated with plasma. Oxygen radicals are generated from the insulating member 6 made of quartz by sputtering of the plasma, and the polymer formed on the back surface of the wafer W also by the O radicals. Is removed.

こうして、所定時間ウエハＷに対するエッチング処理を行った後、処理ガスの供給を停止し、高周波電源部３８，４６からの高周波電力の供給を停止すると共に、真空ポンプ２５による処理容器２０内の真空排気を停止して、ウエハＷを処理容器２０の外部に搬出する。   Thus, after performing the etching process on the wafer W for a predetermined time, the supply of the processing gas is stopped, the supply of the high-frequency power from the high-frequency power supply units 38 and 46 is stopped, and the vacuum pump 25 evacuates the processing chamber 20. And the wafer W is carried out of the processing container 20.

上述の実施の形態によれば、フォーカスリング５の下方側に、絶縁部材６及び伝熱部材７を設けているので、プラズマ処理中のフォーカスリング５が冷却され、ウエハＷの裏面側周縁部へのポリマー（堆積物）の付着が抑制される。この際、伝熱部材７は載置台３上のウエハＷと同心円状に設けられているので、フォーカスリング５がウエハＷの周方向においてほぼ均一に冷却される。また、フォーカスリング５の温度上昇が抑えられて温度が安定するため、フォーカスリング５の温度変化により、ウエハＷ裏面側へ回り込むプラズマ中のイオンの軌道が変化するおそれがない。このため、ウエハＷ裏面側に形成されたポリマーをスパッタにより安定して除去することができて、前記ポリマーの付着量を低減することができる。   According to the above-described embodiment, since the insulating member 6 and the heat transfer member 7 are provided on the lower side of the focus ring 5, the focus ring 5 during the plasma processing is cooled to the rear surface side peripheral portion of the wafer W. The adhesion of the polymer (sediment) is suppressed. At this time, since the heat transfer member 7 is provided concentrically with the wafer W on the mounting table 3, the focus ring 5 is cooled substantially uniformly in the circumferential direction of the wafer W. Further, since the temperature rise of the focus ring 5 is suppressed and the temperature becomes stable, there is no possibility that the trajectory of ions in the plasma that circulates toward the back side of the wafer W changes due to the temperature change of the focus ring 5. For this reason, the polymer formed on the back surface side of the wafer W can be stably removed by sputtering, and the adhesion amount of the polymer can be reduced.

また、絶縁部材６と伝熱部材７は載置台３上のウエハＷの径方向に互いに隣接して設けられ、フォーカスリング５はこれら絶縁部材６及び伝熱部材７の上に載置されている。この際、フォーカスリング５は石英よりなる絶縁部材６にて高さが規定されるので、フォーカスリング５の高さが変化するおそれがなく、ウエハＷ周縁のプラズマの乱れが抑えられる。また、絶縁部材６とフォーカスリング５との間に伝熱部材７が介在しないため、フォーカスリング５の下方側のインピーダンスが変化するおそれがなく、プラズマ処理中のフォーカスリングの電位が安定する。   The insulating member 6 and the heat transfer member 7 are provided adjacent to each other in the radial direction of the wafer W on the mounting table 3, and the focus ring 5 is mounted on the insulating member 6 and the heat transfer member 7. . At this time, since the height of the focus ring 5 is regulated by the insulating member 6 made of quartz, there is no possibility that the height of the focus ring 5 will change, and plasma disturbance at the periphery of the wafer W can be suppressed. Further, since the heat transfer member 7 is not interposed between the insulating member 6 and the focus ring 5, there is no possibility that the impedance on the lower side of the focus ring 5 changes, and the potential of the focus ring during plasma processing is stabilized.

このように、フォーカスリング５と載置台３との間には、絶縁部材６を介して両者を電気的に接続する部位と、伝熱部材７を介して両者を熱的に接続する部位とが別個に存在することになる。これにより、絶縁部材６による電気的な制御と、伝熱部材７による温度制御とが夫々独立して行われるので、これらの制御の複雑化を抑えることができる。さらに、上述の実施の形態では、絶縁部材６が載置領域３２側になるように設けられているので、絶縁部材６が載置台３上のウエハＷの近傍に位置し、既述のＯラジカルによるポリマーの除去が速やかに進行する。   As described above, between the focus ring 5 and the mounting table 3, there are a portion that electrically connects both via the insulating member 6 and a portion that thermally connects both via the heat transfer member 7. It will exist separately. Thereby, since electrical control by the insulating member 6 and temperature control by the heat transfer member 7 are performed independently, complication of these controls can be suppressed. Furthermore, in the above-described embodiment, since the insulating member 6 is provided on the mounting region 32 side, the insulating member 6 is positioned in the vicinity of the wafer W on the mounting table 3, and the O radical described above. The removal of the polymer by proceeds rapidly.

以上において、本実施の形態では、絶縁部材と伝熱部材とがフォーカスリング５と載置台３との間において、載置台３上のウエハＷの径方向に互いに隣接して設けられればよく、図５に示すように、絶縁部材６が伝熱部材７１に対して前記ウエハＷの径方向の外側に設けるように配置してもよい。この例では、伝熱部材７１は、その内周面７０がフォーカスリング５の段部５１の下部側の内周面５２と上下方向に揃うように設けられている。   As described above, in the present embodiment, the insulating member and the heat transfer member may be provided adjacent to each other in the radial direction of the wafer W on the mounting table 3 between the focus ring 5 and the mounting table 3. As shown in FIG. 5, the insulating member 6 may be disposed so as to be provided on the outer side in the radial direction of the wafer W with respect to the heat transfer member 71. In this example, the heat transfer member 71 is provided such that its inner peripheral surface 70 is aligned with the inner peripheral surface 52 on the lower side of the stepped portion 51 of the focus ring 5 in the vertical direction.

続いて、本発明の第２の実施の形態について、図６及び図７を参照して説明する。この例は、絶縁部材と伝熱部材とが載置領域３２の外方に同心円状に設けられる構成において、伝熱部材７２の左右両側（載置台３上のウエハＷの径方向の両側）に第１の絶縁部材６２ａ及び第２の絶縁部材６２ｂを夫々互いに隣接して設けたものである。このような構成は、絶縁部材６２ａ，６２ｂ及びシート状の伝熱部材７２を夫々環状に形成し、載置台３の段部３１上面に、載置台３上のウエハＷの径方向の内側から外側に向って、第１の絶縁部材６２ａ、伝熱部材７２、第２の絶縁部材６２ｂがこの順序で並ぶように配列することにより形成される。   Next, a second embodiment of the present invention will be described with reference to FIGS. In this example, in the configuration in which the insulating member and the heat transfer member are provided concentrically outside the mounting region 32, the heat transfer member 72 is provided on both the left and right sides (both sides in the radial direction of the wafer W on the mounting table 3). The first insulating member 62a and the second insulating member 62b are provided adjacent to each other. In such a configuration, the insulating members 62a and 62b and the sheet-like heat transfer member 72 are each formed in an annular shape, and are formed on the upper surface of the step portion 31 of the mounting table 3 from the inside to the outside in the radial direction of the wafer W on the mounting table 3. The first insulating member 62a, the heat transfer member 72, and the second insulating member 62b are arranged so as to be arranged in this order.

この例においても、例えば石英により構成された第１の絶縁部材６２ａ及び第２の絶縁部材６２ｂにより、フォーカスリング５がその高さ位置が規制された状態で設けられる。また、伝熱部材７２は粘着性を有しているので、その粘着性によりフォーカスリング５と伝熱部材７２との間、及び伝熱部材７２と載置台３との間において夫々密着される。   Also in this example, the focus ring 5 is provided in a state in which the height position thereof is regulated by the first insulating member 62a and the second insulating member 62b made of, for example, quartz. Further, since the heat transfer member 72 has adhesiveness, the heat transfer member 72 is in close contact with the focus ring 5 and the heat transfer member 72 and between the heat transfer member 72 and the mounting table 3 due to the adhesiveness.

この構成においても、載置台３とフォーカスリング５との間に、絶縁部材６２ａ，６２ｂと伝熱部材７２が左右方向に隣接して設けられているので、フォーカスリング５が周方向に沿ってほぼ均一に冷却され、ウエハＷ裏面側に付着するポリマーの付着量を低減することができる。また、伝熱部材７２の左右方向の両側に絶縁部材６が設けられているので、よりフォーカスリング５の高さの変化を抑えた状態で、伝熱部材７２とフォーカスリング５及び載置台３との密着性を確保することができる。さらに、絶縁部材６２ａ，６２ｂによるフォーカスリング５の電気的制御と、伝熱部材７２によるフォーカスリング６の温度制御とを独立して行うことができる。   Also in this configuration, since the insulating members 62a and 62b and the heat transfer member 72 are provided adjacent to each other in the left-right direction between the mounting table 3 and the focus ring 5, the focus ring 5 is substantially along the circumferential direction. The amount of the polymer that is uniformly cooled and adheres to the back side of the wafer W can be reduced. In addition, since the insulating members 6 are provided on both sides of the heat transfer member 72 in the left-right direction, the heat transfer member 72, the focus ring 5, and the mounting table 3 in a state where the change in the height of the focus ring 5 is further suppressed. Can be ensured. Furthermore, the electrical control of the focus ring 5 by the insulating members 62a and 62b and the temperature control of the focus ring 6 by the heat transfer member 72 can be performed independently.

さらにまた、伝熱部材７１が絶縁部材６２ａ，６２ｂにより囲まれた状態であるので、伝熱部材７２がプラズマによりスパッタされにくくなる。これにより、伝熱部材７２の消耗や劣化を抑えることができるので、フォーカスリング５の温度制御を長期的に安定して行うことができる。   Furthermore, since the heat transfer member 71 is surrounded by the insulating members 62a and 62b, the heat transfer member 72 is less likely to be sputtered by plasma. Thereby, since consumption and deterioration of the heat transfer member 72 can be suppressed, the temperature control of the focus ring 5 can be stably performed over a long period of time.

続いて、本実施の形態の変形例について、図８〜図１０を用いて説明する。図８の例は、絶縁部材６３と伝熱部材７３とが載置領域３２の外方に、当該載置領域３２と同心円状に設けられる構成において、伝熱部材７３を、載置台３上のウエハＷの周方向に沿って、互いに間隔を開けて設けたものである。この際、図８中Ａ−Ａ線に沿った断面は、図６に示すように構成されている。   Subsequently, a modification of the present embodiment will be described with reference to FIGS. In the example of FIG. 8, in the configuration in which the insulating member 63 and the heat transfer member 73 are provided on the outer side of the placement region 32 and concentrically with the placement region 32, the heat transfer member 73 is placed on the placement table 3. The wafers W are provided at intervals along the circumferential direction of the wafer W. At this time, the cross section along the line AA in FIG. 8 is configured as shown in FIG.

この際、図９に示すように、絶縁部材６４の内部に、多数の伝熱部材７４を載置領域３２と同心円状に互いに間隔を開けて設けるようにしてもよい。この際、図９中Ｂ−Ｂ線に沿った断面は、図６に示すように構成されている。   At this time, as shown in FIG. 9, a large number of heat transfer members 74 may be provided inside the insulating member 64 so as to be concentric with the placement region 32. Under the present circumstances, the cross section along the BB line in FIG. 9 is comprised as shown in FIG.

これら図８及び図９の構成は、例えば石英リングにより構成された絶縁部材６３，６４に、所定間隔を開けて切欠を形成し、この切欠部位に、粘着性のある弾性体よりなる伝熱部材７３，７４を埋め込むことにより構成される。この際、伝熱部材７３，７４は、その上面がフォーカスリング５に密着すると共に、下面が載置台３に密着するように絶縁部材６３，５４に夫々設けられる。   8 and 9, the insulating members 63 and 64 made of, for example, quartz rings are formed with notches at predetermined intervals, and the heat transfer members made of an adhesive elastic body are formed at the notched portions. 73 and 74 are embedded. At this time, the heat transfer members 73 and 74 are provided on the insulating members 63 and 54 so that the upper surfaces thereof are in close contact with the focus ring 5 and the lower surfaces thereof are in close contact with the mounting table 3.

これらの構成においても、絶縁部材６３（６４）と伝熱部材７３（７４）とは、載置台３とフォーカスリング５との間に、伝熱部材７３（７４）の左右両側に絶縁部材６３（６４）が隣接して設けられているので、上述の第２の実施の形態と同様の効果が得られる。   Also in these configurations, the insulating member 63 (64) and the heat transfer member 73 (74) are disposed between the mounting table 3 and the focus ring 5 on the left and right sides of the heat transfer member 73 (74). 64) are provided adjacent to each other, so that the same effect as in the second embodiment described above can be obtained.

また、図１０に示す例は、絶縁部材と伝熱部材とが載置領域３２の外方に当該載置領域３２と同心円状に設けられる構成において、絶縁部材６５ａ〜６５ｃとシート状の伝熱部材７５ａ，７５ｂとを、載置台３上のウエハＷの径方向に積層するように設けたものである。このような構成は、図１０（ａ），（ｂ）に示すように、石英リングにより構成された絶縁部材６５ａ〜６５ｃを用意し、２つの絶縁部材６５ａ，６５ｂ（６５ｂ，６５ｃ）により、環状の薄いシート状の伝熱部材７５ａ（７５ｂ）を両側から挟み込むことにより構成される。伝熱部材７５ａ（７５ｂ）は、その上面がフォーカスリング５に密着すると共に、下面が載置台３に密着するように絶縁部材６５ａ〜６５ｃに設けられる。   Further, in the example shown in FIG. 10, in the configuration in which the insulating member and the heat transfer member are provided concentrically with the mounting region 32 outside the mounting region 32, the insulating members 65 a to 65 c and the sheet-like heat transfer are provided. The members 75 a and 75 b are provided so as to be stacked in the radial direction of the wafer W on the mounting table 3. In such a configuration, as shown in FIGS. 10A and 10B, insulating members 65a to 65c formed of a quartz ring are prepared, and the two insulating members 65a and 65b (65b and 65c) are annular. A thin sheet-like heat transfer member 75a (75b) is sandwiched from both sides. The heat transfer member 75a (75b) is provided on the insulating members 65a to 65c so that the upper surface thereof is in close contact with the focus ring 5 and the lower surface thereof is in close contact with the mounting table 3.

ここで、前記伝熱部材７５ａ（７５ｂ）の上下両端は、フォーカスリング５と載置台３とを熱的に接触させるため、夫々フォーカスリング５の下面及び載置台３の上面及び下面に密着するように設けられる。この際、図１０（ｃ）に示すように、伝熱部材７５ａ（７５ｂ）の上下両端が、絶縁部材６５ａ〜６５ｃの上面及び下面からはみ出すように設けると共に、フォーカスリング５の下面及び載置台３の上面に、前記はみ出し部分に対応する溝部５０，３０を設け、このはみ出し部分及び溝部５０，３０を介して、伝熱部材７５ａ（７５ｂ）をフォーカスリング５及び載置台３に密着させるようにしてもよい。   Here, the upper and lower ends of the heat transfer member 75a (75b) are in close contact with the lower surface of the focus ring 5 and the upper and lower surfaces of the mounting table 3, respectively, in order to bring the focus ring 5 and the mounting table 3 into thermal contact. Is provided. At this time, as shown in FIG. 10C, the upper and lower ends of the heat transfer member 75a (75b) are provided so as to protrude from the upper and lower surfaces of the insulating members 65a to 65c, and the lower surface of the focus ring 5 and the mounting table 3 are provided. The groove portions 50 and 30 corresponding to the protruding portions are provided on the upper surface of the heat transfer member 75, and the heat transfer member 75a (75b) is brought into close contact with the focus ring 5 and the mounting table 3 through the protruding portions and the groove portions 50 and 30. Also good.

この構成においても、絶縁部材６５ａ〜６５ｃと伝熱部材７５ａ，７５ｂとは、載置台３とフォーカスリング５との間に、伝熱部材７５の左右両側に絶縁部材６５が隣接するように設けられているので、上述の第２の実施の形態と同様の効果が得られる。   Also in this configuration, the insulating members 65 a to 65 c and the heat transfer members 75 a and 75 b are provided between the mounting table 3 and the focus ring 5 so that the insulating members 65 are adjacent to the left and right sides of the heat transfer member 75. Therefore, the same effect as in the second embodiment described above can be obtained.

続いて、本発明の第３の実施の形態について、図１１を参照して説明する。この例は、絶縁部材６６と載置台３との間に複数の下側伝熱部材７６ａを設けると共に、絶縁部材６６とフォーカスリング５との間に複数の上側伝熱部材７６ｂを設ける構成である。前記複数の下側伝熱部材７６ａは、絶縁部材６６と載置台３の上面との間にて両者に密着し、各々フォーカスリング５に沿ってリング状にかつ互いにフォーカスリング５の径方向に離間して設けられている。また、前記複数の上側伝熱部材７６ｂは、絶縁部材６６とフォーカスリング５の下面との間にて両者に密着し、各々フォーカスリング５に沿ってリング状にかつ互いにフォーカスリング５の径方向に離間して設けられている。   Subsequently, a third embodiment of the present invention will be described with reference to FIG. In this example, a plurality of lower heat transfer members 76 a are provided between the insulating member 66 and the mounting table 3, and a plurality of upper heat transfer members 76 b are provided between the insulating member 66 and the focus ring 5. . The plurality of lower heat transfer members 76 a are in close contact with each other between the insulating member 66 and the upper surface of the mounting table 3, and are separated from each other in a ring shape along the focus ring 5 and in the radial direction of the focus ring 5. Is provided. The plurality of upper heat transfer members 76b are in close contact with each other between the insulating member 66 and the lower surface of the focus ring 5, and each ring-shaped along the focus ring 5 and in the radial direction of the focus ring 5. They are spaced apart.

具体的には、例えば図１１（ｂ）に示すように、例えば石英リングよりなる絶縁部材６６の上下に、複数本例えば４本の環状のシート状の下側伝熱部材７６ａ及び上側伝熱部材７６ｂを貼設することにより構成されている。また、夫々の伝熱部材７６ａ，７６ｂには、互いにフォーカスリング５の径方向に隣接する伝熱部材７６ａ，７６ｂ間の空間を処理容器２０内の雰囲気に連通するように、複数の切り欠き部７７が周方向に沿って形成されている。なお、この例では、絶縁部材６６の表面側の伝熱部材７６ａと裏面側の伝熱部材７６ｂには、互いに上下方向に重ならないように設けられているが、これら伝熱部材７６ａ，７６ｂは互いに上下方向に重なるように設けてもよい。また、前記切り欠き部７７は、下側伝熱部材７６ａ及び上側伝熱部材７６ｂの少なくとも一方に形成するようにしてもよい。   Specifically, for example, as shown in FIG. 11B, a plurality of, for example, four annular sheet-like lower heat transfer members 76a and upper heat transfer members are provided above and below an insulating member 66 made of, for example, a quartz ring. It is comprised by sticking 76b. Further, each of the heat transfer members 76 a and 76 b has a plurality of cutout portions so that the space between the heat transfer members 76 a and 76 b adjacent to each other in the radial direction of the focus ring 5 communicates with the atmosphere in the processing container 20. 77 is formed along the circumferential direction. In this example, the heat transfer member 76a on the front surface side and the heat transfer member 76b on the back surface side of the insulating member 66 are provided so as not to overlap each other in the vertical direction, but these heat transfer members 76a and 76b You may provide so that it may mutually overlap in an up-down direction. Further, the notch 77 may be formed in at least one of the lower heat transfer member 76a and the upper heat transfer member 76b.

この構成においては、プラズマ処理中に、フォーカスリング５の熱は、上側伝熱部材７６ｂ→絶縁部材６６→下側伝熱部材７６ａ→載置台３の系路で移動するため、プラズマ処理中においてフォーカスリング５が冷却される。これにより、上述の第１の実施の形態と同様に、ウエハＷ裏面側周縁部へのポリマーの付着量を低減することができる。また、伝熱部材７６ａ，７６ｂは、載置領域３２と同心円状に設けられているので、フォーカスリング５を周方向に沿ってほぼ均一に冷却することができる。   In this configuration, the heat of the focus ring 5 moves in the system path of the upper heat transfer member 76b → the insulating member 66 → the lower heat transfer member 76a → the mounting table 3 during the plasma processing. The ring 5 is cooled. Thereby, similarly to the above-mentioned 1st Embodiment, the adhesion amount of the polymer to the wafer W back surface side peripheral part can be reduced. Moreover, since the heat transfer members 76a and 76b are provided concentrically with the placement region 32, the focus ring 5 can be cooled substantially uniformly along the circumferential direction.

また、伝熱部材７６ａ，７６ｂは絶縁部材６６に面接触させているので、貼り付け時に絶縁部材６６と伝熱部材７６ａ，７６ｂとの間に気泡が混入するおそれがある。この際、伝熱部材７６ａ，７６ｂには切り欠き部７７が形成されているため、処理容器２０内を真空排気する際、この切り込み部７７から気泡が抜け出して行き、結果として、プラズマ処理時には絶縁部材６６と伝熱部材７６ａ，７６ｂとの間に気泡がほぼ存在しない状態となる。これにより、伝熱部材７６ａ，７６ｂと絶縁部材６６との接触状態が面内（フォーカスリング５の下面全体）において揃えられるので、フォーカスリング５の熱が面内においてほぼ均一に載置台３側へ移動し、フォーカスリング５をほぼ均一に温度調整することができる。   Further, since the heat transfer members 76a and 76b are in surface contact with the insulating member 66, there is a possibility that air bubbles may be mixed between the insulating member 66 and the heat transfer members 76a and 76b at the time of attachment. At this time, since the notch 77 is formed in the heat transfer members 76a and 76b, when the inside of the processing container 20 is evacuated, bubbles are extracted from the notch 77, and as a result, insulation is performed during plasma processing. There is almost no air bubble between the member 66 and the heat transfer members 76a and 76b. As a result, the contact state between the heat transfer members 76a and 76b and the insulating member 66 is aligned in the plane (the entire lower surface of the focus ring 5), so that the heat of the focus ring 5 is substantially uniformly transferred to the mounting table 3 side in the plane. The focus ring 5 can be moved and the temperature of the focus ring 5 can be adjusted almost uniformly.

以上において、本発明では、図１２（ａ）に示すように、フォーカスリング５の下面の高さ位置が、載置台３上のウエハＷの径方向において互いに異なる場合も本発明の範囲に含まれる。また、図１２（ｂ）に示すように、例えば絶縁部材６８と伝熱部材７８とを前記ウエハＷの径方向に並べて配列した場合において、絶縁部材６８の内部に伝熱部材７８の一部が入り込み、前記左右方向の一部において絶縁部材６８と伝熱部材７８とが上下方向に積層する場合も本発明の範囲に含まれる。   As described above, in the present invention, as shown in FIG. 12A, the case where the height position of the lower surface of the focus ring 5 differs in the radial direction of the wafer W on the mounting table 3 is also included in the scope of the present invention. . 12B, for example, when the insulating member 68 and the heat transfer member 78 are arranged side by side in the radial direction of the wafer W, a part of the heat transfer member 78 is inside the insulating member 68. The case where the insulating member 68 and the heat transfer member 78 are stacked in the vertical direction in part of the horizontal direction is also included in the scope of the present invention.

また、図１３に示すように、載置台３の上面とフォーカスリング５の下面との間に、前記載置台３上のウエハＷの中心に対して同心円状に絶縁部材６９を設けると共に、この載置台３の外側面と絶縁部材６９の外側面と前記フォーカスリング５の外側面とに亘って、これら外側面に密着して、かつフォーカスリング５に沿って伝熱部材７９を設けるようにしてもよい。この構成においても、フォーカスリング５の熱は、伝熱部材７９を介して載置台３に伝熱されるので、プラズマ処理の際に、フォーカスリング５が冷却される。この際、伝熱部材７９は環状に構成されてもよいし、載置台３上のウエハＷの中心に対して同心円状に互いに間隔を開けて設けられるものであってもよい。   As shown in FIG. 13, an insulating member 69 is provided concentrically with respect to the center of the wafer W on the mounting table 3 between the upper surface of the mounting table 3 and the lower surface of the focus ring 5. The heat transfer member 79 may be provided in close contact with the outer surface of the mounting table 3, the outer surface of the insulating member 69, and the outer surface of the focus ring 5 and along the focus ring 5. Good. Also in this configuration, the heat of the focus ring 5 is transferred to the mounting table 3 through the heat transfer member 79, so that the focus ring 5 is cooled during the plasma processing. At this time, the heat transfer member 79 may be formed in an annular shape, or may be provided concentrically with respect to the center of the wafer W on the mounting table 3.

図１のプラズマエッチング装置を用いてウエハＷに対してプラズマ処理を行い、このときのフォーカスリング５の温度変化を測定した。この際、プラズマ発生用の高周波電源部４６から１２００Ｗの高周波電力を供給し、載置領域３２上のウエハＷを３０℃に設定し、処理ガスとしてＣＦ系ガスを供給して５枚のウエハＷに対して連続してプラズマ処理を行ない、フォーカスリング５の温度を低コヒーレンス光の干渉を用いた温度計により測定した（実施例）。また、絶縁部材６としては石英リングを用い、伝熱部材７としてはアルミナを充填した高分子シリコンゲルより、厚さが０．５ｍｍに形成された熱伝導シートを用いた。また、比較例として、伝熱部材７を設けない場合についても同様のプラズマ処理を行い、このときのフォーカスリング５の温度を測定した。   Plasma processing was performed on the wafer W using the plasma etching apparatus of FIG. 1, and the temperature change of the focus ring 5 at this time was measured. At this time, high frequency power of 1200 W is supplied from the high frequency power supply unit 46 for generating plasma, the wafer W on the mounting region 32 is set to 30 ° C., and a CF-based gas is supplied as a processing gas to supply five wafers W. Then, the plasma processing was continuously performed on the above, and the temperature of the focus ring 5 was measured with a thermometer using interference of low coherence light (Example). Further, a quartz ring was used as the insulating member 6, and a heat conductive sheet having a thickness of 0.5 mm made of polymer silicon gel filled with alumina was used as the heat transfer member 7. Further, as a comparative example, the same plasma treatment was performed when the heat transfer member 7 was not provided, and the temperature of the focus ring 5 at this time was measured.

この結果を図１４に示す。比較例、実施例共に、プラズマ発生のタイミングでフォーカスリング５の温度が上昇し、プラズマからフォーカスリング５へ入熱することが理解される。但し、実施例では、処理時間が経過してもフォーカスリング５の温度変化はほぼ同じであり、伝熱部材７を設けることによりフォーカスリング５の熱が載置台３へ移動し、フォーカスリング５への熱の蓄積が抑えられて、フォーカスリング５を約５０℃程度に冷却できることが認められた。一方、比較例では、処理時間の経過に伴ってフォーカスリング５の温度が上昇しており、プラズマの照射を継続すると、フォーカスリング５に蓄熱され、フォーカスリング５が約２３０度まで上昇することが理解される。   The result is shown in FIG. In both the comparative example and the example, it is understood that the temperature of the focus ring 5 rises at the timing of plasma generation, and heat is input from the plasma to the focus ring 5. However, in the embodiment, the temperature change of the focus ring 5 is substantially the same even after the processing time has elapsed, and by providing the heat transfer member 7, the heat of the focus ring 5 moves to the mounting table 3 and moves to the focus ring 5. It was confirmed that the heat accumulation was suppressed and the focus ring 5 could be cooled to about 50 ° C. On the other hand, in the comparative example, the temperature of the focus ring 5 increases as the processing time elapses, and when the plasma irradiation is continued, heat is stored in the focus ring 5 and the focus ring 5 may rise to about 230 degrees. Understood.

以上において、本発明は、半導体ウエハＷ以外にＦＰＤ(フラットパネルディスプレイ)用のガラス基板等の基板に対してプラズマ処理を行うプラズマ処理装置についても適用できる。また、本発明は、エッチング処理の他、アッシングやＣＶＤ（化学気相成長）、プラズマトリートメント等のプラズマ処理を行うプラズマ処理装置に適用可能である。   As described above, the present invention can also be applied to a plasma processing apparatus that performs plasma processing on a substrate such as a glass substrate for FPD (flat panel display) in addition to the semiconductor wafer W. Further, the present invention can be applied to a plasma processing apparatus that performs plasma processing such as ashing, CVD (chemical vapor deposition), and plasma treatment in addition to etching processing.

Ｗ 半導体ウエハ
２ プラズマエッチング装置
２０ 処理容器
３ 載置台
３１ 段部
３２ 載置領域
３８ バイアス用高周波電源部
４ シャワーヘッド
４６ プラズマ発生用高周波電源部
５ フォーカスリング
６，６ａ，６ｂ，６１〜６９ 絶縁部材
７，７１〜７９ 伝熱部材 W Semiconductor wafer 2 Plasma etching apparatus 20 Processing vessel 3 Mounting table 31 Step 32 Mounting area 38 High frequency power supply unit for bias 4 Shower head 46 High frequency power supply unit for plasma generation 5 Focus rings 6, 6a, 6b, 61 to 69 Insulating member 7,71-79 Heat transfer member

Claims (6)

真空容器内に設けられた下部電極を兼用する載置台の基板載置領域に基板を載置すると共に、前記下部電極と上部電極との間に高周波電力を印加して処理ガスをプラズマ化し、基板にプラズマ処理を施すプラズマ処理装置において、
前記基板載置領域を囲むように前記載置台上に設けられ、プラズマの状態を調整するための導電性のリング部材と、
前記載置台の上面と前記リング部材の下面との間にて当該リング部材に沿って、前記載置台上の基板の中心に対して同心円状に設けられ、基板の裏面側にプラズマ中のイオンを引き込むように当該リング部材と基板との電位差を調整するための絶縁部材と、
この絶縁部材に対して基板の径方向に隣接する位置であって、前記載置台の上面と前記リング部材の下面との間に当該上面及び下面に密着してかつ当該リング部材に沿って設けられた、前記絶縁部材とは別体の伝熱部材と、を備えたことを特徴とするプラズマ処理装置。 A substrate is placed on a substrate placement region of a placement table that also serves as a lower electrode provided in a vacuum vessel, and a high-frequency power is applied between the lower electrode and the upper electrode to convert the processing gas into a plasma, and the substrate In a plasma processing apparatus for performing plasma processing on
A conductive ring member provided on the mounting table to surround the substrate mounting region, and for adjusting a plasma state;
Along the ring member between the upper surface of the mounting table and the lower surface of the ring member, a concentric circle is provided with respect to the center of the substrate on the mounting table. An insulating member for adjusting the potential difference between the ring member and the substrate so as to be pulled in;
It is a position adjacent to the insulating member in the radial direction of the substrate, and is provided in close contact with the upper surface and the lower surface between the upper surface of the mounting table and the lower surface of the ring member and along the ring member. A plasma processing apparatus comprising: a heat transfer member separate from the insulating member . 前記絶縁部材の上面は、前記リング部材に接触していることを特徴とする請求項１記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein an upper surface of the insulating member is in contact with the ring member. 前記絶縁部材は、伝熱部材に対して基板の径方向内側及び外側の両方に設けられていることを特徴とする請求項１または２記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the insulating member is provided on both the radially inner side and the outer side of the substrate with respect to the heat transfer member. 真空容器内に設けられた下部電極を兼用する載置台の基板載置領域に基板を載置すると共に、前記下部電極と上部電極との間に高周波電力を印加して処理ガスをプラズマ化し、基板にプラズマ処理を施すプラズマ処理装置において、
前記基板載置領域を囲むように前記載置台上に設けられ、プラズマの状態を調整するための導電性のリング部材と、
前記載置台の上面と前記リング部材の下面との間にて当該リング部材に沿って、前記載置台上の基板の中心に対して同心円状に設けられ、基板の裏面側にプラズマ中のイオンを引き込むように当該リング部材と基板との電位差を調整するための絶縁部材と、
この絶縁部材と載置台の上面との間にて両者に密着し、各々リング部材に沿って、前記載置台上の基板の中心に対して同心円状にかつ互いにリング部材の径方向に離間して設けられた、前記絶縁部材とは別体の複数の下側伝熱部材と、
前記絶縁部材とリング部材の下面との間にて両者に密着し、各々リング部材に沿って、前記載置台上の基板の中心に対して同心円状にかつ互いにリング部材の径方向に離間して設けられた、前記絶縁部材とは別体の複数の上側伝熱部材と、を備えたことを特徴とするプラズマ処理装置。 A substrate is placed on a substrate placement region of a placement table that also serves as a lower electrode provided in a vacuum vessel, and a high-frequency power is applied between the lower electrode and the upper electrode to convert the processing gas into a plasma, and the substrate In a plasma processing apparatus for performing plasma processing on
A conductive ring member provided on the mounting table to surround the substrate mounting region, and for adjusting a plasma state;
Along the ring member between the upper surface of the mounting table and the lower surface of the ring member, a concentric circle is provided with respect to the center of the substrate on the mounting table. An insulating member for adjusting the potential difference between the ring member and the substrate so as to be pulled in;
The insulating member and the upper surface of the mounting table are in close contact with each other, respectively, along the ring member, concentrically with respect to the center of the substrate on the mounting table and spaced apart from each other in the radial direction of the ring member. A plurality of lower heat transfer members provided separately from the insulating member ;
The insulating member and the lower surface of the ring member are in close contact with each other, and are respectively concentric with the center of the substrate on the mounting table and spaced apart from each other in the radial direction of the ring member along the ring member. A plasma processing apparatus comprising: a plurality of upper heat transfer members provided separately from the insulating member . 上側伝熱部材及び下側伝熱部材の少なくとも一方は、互いにリング部材の径方向に隣接する伝熱部材間の空間を真空容器内の雰囲気に連通するように切り欠かれていることを特徴とする請求項４記載のプラズマ処理装置。   At least one of the upper heat transfer member and the lower heat transfer member is cut out so that the space between the heat transfer members adjacent to each other in the radial direction of the ring member communicates with the atmosphere in the vacuum vessel. The plasma processing apparatus according to claim 4. 真空容器内に設けられた下部電極を兼用する載置台の基板載置領域に基板を載置すると共に、前記下部電極と上部電極との間に高周波電力を印加して処理ガスをプラズマ化し、基板にプラズマ処理を施すプラズマ処理装置において、
前記基板載置領域を囲むように前記載置台上に設けられ、プラズマの状態を調整するための導電性のリング部材と、
前記載置台の上面と前記リング部材の下面との間にて当該リング部材に沿って、前記載置台上の基板の中心に対して同心円状に設けられ、基板の裏面側にプラズマ中のイオンを引き込むように当該リング部材と基板との電位差を調整するための絶縁部材と、
前記リング部材の外側面と絶縁部材の外側面と載置台の側面との間に、これら側面に密着して、かつ当該リング部材に沿って設けられた、前記絶縁部材とは別体の伝熱部材と、を備えたことを特徴とするプラズマ処理装置。 A substrate is placed on a substrate placement region of a placement table that also serves as a lower electrode provided in a vacuum vessel, and a high-frequency power is applied between the lower electrode and the upper electrode to convert the processing gas into a plasma, and the substrate In a plasma processing apparatus for performing plasma processing on
A conductive ring member provided on the mounting table to surround the substrate mounting region, and for adjusting a plasma state;
Along the ring member between the upper surface of the mounting table and the lower surface of the ring member, a concentric circle is provided with respect to the center of the substrate on the mounting table. An insulating member for adjusting the potential difference between the ring member and the substrate so as to be pulled in;
Between the side surface of the outer side surface a mounting table of the outer side surface and the insulating member of the ring member, in close contact with these sides, and the provided along the ring member, the heat transfer of the insulating member and the separate A plasma processing apparatus comprising: a member;
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