CN102737940B - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN102737940B CN102737940B CN201210089052.1A CN201210089052A CN102737940B CN 102737940 B CN102737940 B CN 102737940B CN 201210089052 A CN201210089052 A CN 201210089052A CN 102737940 B CN102737940 B CN 102737940B
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- mounting table
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- insulating element
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- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000009832 plasma treatment Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 238000001020 plasma etching Methods 0.000 abstract description 15
- 239000013049 sediment Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 239000007921 spray Substances 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000006978 adaptation Effects 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000017 hydrogel Substances 0.000 description 4
- 229920002521 macromolecule Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen radical Chemical class 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced.
Description
Technical field
The present invention relates to the technology of such as substrate such as glass substrate of semiconductor wafer or FPD (flat-panel monitor) being carried out to plasma treatment.
Background technology
In the manufacturing process of the semiconductor substrate of the glass substrate manufactured at semiconductor wafer or FPD, there is the operation of plasma treatment substrate being implemented to the regulation such as etch processes, film forming process.In the plasma processing apparatus carrying out these operations, by the mounting table of substrate-placing in vacuum chamber, make process gaseous plasma in the space above this mounting table, plasma treatment is carried out to aforesaid substrate.In addition, as shown in Figure 15 (a), around substrate in mounting table 11 such as semiconductor wafer W (hereinafter referred to as " wafer W "), in order to plasma is enclosed in wafer W, such as, and the discontinuity relaxing the bias in wafer W face carries out uniform process in face, is provided with the focusing ring 12 of the ring-type formed by electroconductive components such as silicon.
Above-mentioned mounting table 11 arranges not shown temperature and regulates stream, by from the heat input of plasma and the balance to the heat radiation of mounting table 11 side, under the state making wafer W be adjusted to set point of temperature, carry out plasma treatment.On the other hand, expose in the plasma due under the state that focusing ring 12 floats in heat, become the state higher than wafer W temperature.But the position that free radical kind and byproduct of reaction are attached to low temperature forms polymer (deposit), and as mentioned above, because wafer W is lower than focusing ring 12 temperature, is easy to form polymer 13 at the edge part of wafer W.Although can remove this polymer 13 by the sputtering of plasma ion, the polymer 13 that the back side for wafer W is formed does not have illuminated plasma, can not expect to remove with this sputtering.
As the method for the above-mentioned polymer of removing, in patent documentation 1 and patent documentation 2, proposing have by inserting below focusing ring by insulant, controlling the structure of the potential difference between wafer W and focusing ring.In the structure shown here, as shown in Figure 15 (b), adjust the potential difference between wafer W and focusing ring 12 by insulant 14, change incident come the track of plasma ion plasma ion to be led the wafer W back side, remove above-mentioned polymer 13 with sputtering like this.
According to said structure, the polymer being attached to the wafer W back side can be removed, but due to the temperature of focusing ring 12 can not be controlled, so cannot suppress for the attachment of polymer to wafer W back side peripheral skirt itself.In addition, according to condition, also imagination can not remove attachment polymer on the waferw completely.In this case, in subsequent handling, such as with cleaning in batches etc., polymer is peeled off, but be attached to equipment surface by cleaning fluid, the reason of defect may be become.And then, also worry during the wafer W of batch is processed, make the temperature of focusing ring 12 increase by the irradiation of plasma, because this variations in temperature makes the Orbit revolutionary around the plasma ion to side, the wafer W back side, stably can not carry out the removing of polymer.
In addition, in patent documentation 3, propose between focusing ring and electrode block, by by the stacked setting in the vertical direction of the first heat-conduction medium, dielectric ring, the second heat-conduction medium and insulating element, suppress deposit to the technology of the attachment of wafer bevel face.In the structure shown here, suppress the voltage to the sheath formed at focusing ring applies to suppress to input the heat of focusing ring above by electricity consumption dielectric ring, and make the heat transfer of Self-focusing ring to electrode block by the first and second heat-conduction mediums.Like this, make the temperature of focusing ring lower than wafer, inhibit deposit to the attachment of wafer bevel face.
Herein, when making insulator and heat conductor become stepped construction, the contact-making surface of heat conductor and insulator is easy to be mixed into bubble, owing to there is this bubble, the contact condition between insulator and focusing ring is changed, is difficult to heat conduction equably in the face of focusing ring.In addition, because the sputtering removing being attached to the polymer of the side, the back side of wafer is realized by the potential difference between the marginal portion of wafer and focusing ring, require to carry out trickle impedance Control by the insulator be arranged on below focusing ring, and because there is bubble between insulator and focusing ring, the contact condition of the two is changed, harmful effect may be caused to above-mentioned impedance Control.And then, when making insulator and heat conductor be formed as stepped construction, heat conductor deforms, or be mixed into bubble between heat conductor and insulator, the peripheral skirt of focusing ring is easy to lopsidedness downwards, be difficult to the high management of carrying out focusing ring, the control of the plasmoid of wafer perimeter edge becomes unstable.
Patent documentation 1: Japanese Unexamined Patent Publication 2005-277369 publication (Fig. 1, Fig. 2)
Patent documentation 2: Japanese Unexamined Patent Publication 2007-250967 publication (Fig. 1, Fig. 2)
Patent documentation 3: Japanese Unexamined Patent Publication 2007-258500 publication (Fig. 1, paragraph 0030 ~ 0035)
Summary of the invention
The present invention completes in view of such problem, its object is to, and provides and can, by the temperature of control ring parts, suppress deposit to the technology of the adhesion amount of substrate back.
Therefore, plasma processing apparatus of the present invention, at the substrate-placing region of mounting table mounting substrate, above-mentioned mounting table to be arranged in vacuum tank and to be also used as lower electrode, above-mentioned plasma processing apparatus makes process gaseous plasma to applying High frequency power between above-mentioned lower electrode and upper electrode, implement plasma treatment to substrate, the feature of above-mentioned plasma processing apparatus is, comprising:
Ring component, it is arranged in above-mentioned mounting table, for adjusting the state of plasma in the mode of surrounding aforesaid substrate mounting region;
Insulating element, between the lower surface of its upper surface in above-mentioned mounting table and above-mentioned ring component along this ring component relative to the center of the substrate in above-mentioned mounting table be concentric circles arrange, for adjusting the potential difference of this ring component and substrate, thus the ion in plasma is introduced the side, the back side of substrate; With
Conducting-heat elements, it is located at position adjacent with above-mentioned insulating element in the radial direction of substrate, and is close to this upper surface and lower surface between the upper surface and the lower surface of above-mentioned ring component of above-mentioned mounting table, and arranges along above-mentioned ring component.
In addition, other plasma processing apparatus of the present invention, at the substrate-placing region of mounting table mounting substrate, above-mentioned mounting table to be arranged in vacuum tank and to be also used as lower electrode, above-mentioned plasma processing apparatus makes process gaseous plasma to applying High frequency power between above-mentioned lower electrode and upper electrode, implement plasma treatment to substrate, the feature of above-mentioned plasma processing apparatus is, comprising:
Ring component, it is arranged in above-mentioned mounting table, for adjusting the state of plasma in the mode of surrounding aforesaid substrate mounting region;
Insulating element, between the lower surface of its upper surface in above-mentioned mounting table and above-mentioned ring component along this ring component relative to the center of the substrate in above-mentioned mounting table be concentric circles arrange, for adjusting the potential difference of this ring component and substrate, thus the ion in plasma is introduced the side, the back side of substrate;
Multiple downsides conducting-heat elements, it is close to the two between this insulating element and upper surface of mounting table, respectively along ring component relative to the center of the substrate in above-mentioned mounting table be concentric circles arrange, and mutually to arrange discretely in the radial direction of ring component; With
Multiple upsides conducting-heat elements, it is close to the two between above-mentioned insulating element and the lower surface of ring component, respectively along ring component relative to the center of the substrate in above-mentioned mounting table be concentric circles arrange, and mutually to arrange discretely in the radial direction of ring component.
According to the present invention, owing to being provided with conducting-heat elements and insulating element between ring component and mounting table, when can suppress to irradiate plasma, the temperature of ring component rises, and suppresses deposit to the attachment of substrate.In addition, even if deposit is attached on substrate, the track around from the plasma ion to substrate back side that the variations in temperature because of ring component also can be suppressed to cause sends disorderly, therefore, it is possible to stably carry out the deposit utilizing sputtering removing substrate back, reduce deposit to the adhesion amount of substrate back.
Accompanying drawing explanation
Fig. 1 is that the vertical of the first execution mode representing plasma-etching apparatus of the present invention cuts side view.
Fig. 2 is the longitudinal section of the part representing the mounting table arranged in above-mentioned plasma-etching apparatus.
Fig. 3 is plane graph and the longitudinal section of above-mentioned mounting table.
Fig. 4 is the longitudinal section for illustration of effect of the present invention.
Fig. 5 is the longitudinal section of other examples representing the first execution mode of the present invention.
Fig. 6 is the longitudinal section of the second execution mode representing plasma-etching apparatus of the present invention.
Fig. 7 is the plane graph representing the mounting table arranged in the plasma-etching apparatus of Fig. 6.
Fig. 8 is the plane graph of the mounting table of other examples representing the second execution mode of the present invention.
Fig. 9 is the plane graph of the mounting table of another other examples representing the second execution mode of the present invention.
Figure 10 is plane graph and the longitudinal section of the mounting table of another other examples representing the second execution mode of the present invention.
Figure 11 is plane graph and the partial perspective view of the 3rd execution mode representing plasma-etching apparatus of the present invention.
Figure 12 is the longitudinal section of the mounting table of another other examples representing plasma-etching apparatus of the present invention.
Figure 13 is the longitudinal section of the mounting table of another other examples representing plasma-etching apparatus of the present invention.
Figure 14 is the performance plot of the embodiment representing confirmation effect of the present invention and carry out.
Figure 15 is the longitudinal section representing existing mounting table.
Symbol description
W semiconductor wafer
2 plasma-etching apparatus
20 container handlings
3 mounting tables
31 stage portion
32 mounting regions
38 bias voltage high frequency power portion
4 spray heads
46 plasma high frequency power portion
5 focusing rings
6,6a, 6b, 61 ~ 69 insulating elements
7,71 ~ 79 conducting-heat elements
Embodiment
An execution mode of the plasma-etching apparatus of capacitively coupled of the present invention is below described.Fig. 1 is the longitudinal section representing this plasma-etching apparatus 2, this plasma-etching apparatus 2, possesses the airtight container handling (vacuum tank) 20 such as formed by aluminium for implementing plasma treatment therein to wafer W.The central portion of the bottom of this container handling 20 is provided with mounting table 3.This mounting table 3, cut throughout complete cycle in the peripheral skirt of cylindrical upper surface portion, form the shape being formed with stage portion 31, namely in upper surface portion, the part beyond peripheral skirt is the shape of giving prominence to cylindricly.This outstanding position forms the substrate-placing region 32 (hereinafter referred to as " mounting region ") of mounting substrate and wafer W, and the stage portion 31 of surrounding this mounting region 32 is equivalent to the configuring area of ring component described later.
Be provided with the electrostatic chuck 33 configuring chuck electricity consumption pole 33a on dielectric film in the upper surface portion in this mounting region 32, wafer W is positioned on this electrostatic chuck 33 with the state that its peripheral skirt is outstanding.Above-mentioned chuck electrode 33a is electrically connected with the DC power supply 34 be arranged on outside container handling 20 by switch 35.In addition, run through at electrostatic chuck 33 and be provided with not shown multiple ejiction openings, never illustrated gas supply part, thermal medium gas such as He gas is supplied to the short space between this electrostatic chuck 33 and wafer W.In addition, the inside of mounting table 3 is provided with not shown lifter pin, is configured to the handing-over carrying out wafer W between carrying arm in not shown outside and electrostatic chuck 33.
The inside of mounting table 3 is provided with refrigerant circulation chamber 36, and circulating from the refrigerant supply unit 37 of the outside being arranged on mounting table 3 supplies refrigerant.Namely, from the refrigerant that refrigerant supply unit 37 supplies to refrigerant circulation chamber 36 via supply passageway 36a, discharge to mounting table 3 outside via drain passageway 36b, be cooled to set point of temperature by cooler in refrigerant supply unit 37 after, again supply to refrigerant circulation chamber 36 via supply passageway 36a.In addition, mounting table 3 is also used as lower electrode, is connected with high frequency power portion 38 by adaptation 39.This high frequency power portion 38 is grid bias power supplies of the bias voltage in order to be applied for the ion introduced in plasma to lower electrode.
On the other hand, at the top of container handling 20, be relatively provided with spray head 4 across insulating element 21 and above-mentioned mounting region 32, this spray head 4 is connected with gas supply system 41 via supply passageway 42.Be formed with surge chamber 43 in the inside of this spray head 4, and run through at its lower surface and be provided with multiple ejiction opening 44, be configured to the process gas supplied from gas supply system 41 pairs of surge chambers 43, via ejiction opening 44 towards the ejection of mounting side, region 32.In addition, spray head 4 is also used as upper electrode, via adaptation 45 with generate plasma with high frequency power portion 46 be connected.
And then the bottom of container handling 20 is provided with exhaust outlet 22, and this exhaust outlet 22 is connected with the vacuum pump 25 as vacuum exhaust mechanism by exhaust channel 24, and this exhaust channel 24 is provided with gate valve V and pressure adjustment unit 23.In addition, on the sidewall of container handling 20, being provided with can by the conveyance mouth 27 of the wafer W of gate 26 opening and closing.
On the bottom surface (step surface) of the stage portion 31 formed in the peripheral skirt of the upper surface of above-mentioned mounting table 3, as shown in Figures 2 and 3, insulating element 6 and conducting-heat elements 7 are provided with focusing ring 5.This focusing ring 5 is arranged in mounting table 3 in the mode of surrounding mounting region 32, is configured for the ring component of the state adjusting plasma, such as, is made up of electroconductive components such as silicon.The inner periphery of this focusing ring 5 is cut and form stage portion 51 throughout complete cycle, makes the stage portion 51 being accommodated in this focusing ring 5 from the peripheral skirt that the mounting region 32 of wafer W is outstanding.In addition, set in the mode slightly forming gap between the inner peripheral surface 52 of the side, bottom of the mounting outer peripheral face 32a in region 32 and the stage portion 51 of focusing ring 5 shape loading region 32 and focusing ring 5.Like this, when wafer W being placed on mounting region 32, focusing ring 5 is set to the encirclement side, side, the back side of the peripheral skirt from wafer W.
In addition, between the stage portion 31 and the lower surface of focusing ring 5 of above-mentioned mounting table 3, the radial direction of the wafer W in mounting table 3 is arranged side by side insulating element 6 and conducting-heat elements 7.Above-mentioned insulating element 6, as shown in Figures 2 and 3, between the upper surface and the lower surface of focusing ring 5 of mounting table 3, along focusing ring 5, concentrically arrange to round shape relative to the center of the wafer W in mounting table 3, play the potential difference thus the effect ion in plasma being introduced the side, the back side of above-mentioned wafer W that adjust this focusing ring and wafer W.The insulating element 6 of this example is configured to ring-type, is set to contact with the lower surface of focusing ring 5, and by the gap landfill between the inner peripheral surface 52 of the side, bottom of the stage portion 51 of focusing ring 5 and the outer peripheral face 32a in the mounting region 32 of mounting table 3.This insulating element 6, except quartz, such as can also by silicon dioxide (SiO
2), pottery, the formation such as aluminium nitride (AlN), sapphire.
In addition, above-mentioned conducting-heat elements 7 is positioned at and adjacent position in the radial direction of the wafer W of insulating element 6 in mounting table 3, and is be close to this upper surface and lower surface between the upper surface and the lower surface of above-mentioned focusing ring 5 of above-mentioned mounting table 3 and arrange along focusing ring 5.In this example, conducting-heat elements 7 is arranged on the radial outside of above-mentioned wafer W relative to insulating element 6.This conducting-heat elements 7, can obtain and focusing ring 5 is cooled, make suppression free radical kind and byproduct of reaction etc. become the thermal conductivity of significantly such degree to the effect that wafer W is adhered to, be made up of the high material of thermal conductivity, the macromolecule Silica hydrogel that is namely filled with aluminium oxide in this example.In addition, conducting-heat elements 7, except above-mentioned macromolecule Silica hydrogel, can also be made up of the material that the conductive coefficients such as silicon resinoid, carbon resinoid or fluorine-type resin are high.
In this example, be configured to make the upper surface of insulating element 6 consistent with the height of the upper surface of conducting-heat elements 7, by being positioned on above-mentioned insulating element 6 and conducting-heat elements 7 by focusing ring 5, focusing ring 5 is arranged in the stage portion 31 of mounting table 3 under by the state of insulating element 6 maximum height limit of quartz.Now, as conducting-heat elements 7, owing to employing the macromolecule Silica hydrogel being filled with aluminium oxide formed by fusible elastomer, thus because of its adhesiveness ensure that between conducting-heat elements 7 and focusing ring 5 and conducting-heat elements 7 and mounting table 3 stage portion 31 between adaptation (close property).In addition, when focusing ring 5 being arranged on insulating element 6 and conducting-heat elements 7, set the size (height L1) of above-below direction and the size (width L2, L3) of left and right directions respectively, make the potential difference of wafer W and focusing ring 5 be adjusted to the scope of regulation, and focusing ring 5 is not tilted on left and right directions (radial direction of the wafer W in mounting table 3).
Above-mentioned plasma-etching apparatus 2 is controlled by control part 100.This control part 100 is such as made up of computer, possesses program, memory, CPU.Enroll order (each step) in said procedure, each portion of control part 100 plasma Etaching device 2 has been transmitted control signal, makes the etch processes that it puts rules into practice.This program is stored in the storage part of computer-readable storage medium such as floppy disk, compact disk, hard disk, MO (photomagneto disk) etc., is installed to control part 100.
Herein, also comprise the switch 35 for controlling electrostatic chuck 33 in said procedure, the switching on and off of high frequency power portion 38,46, the supply of gas supply system 41 to process gas start and supply the program of opening and closing etc. of gate valve V of stopping, vacuum pump 25, according to the above-mentioned each portion of processing scheme control be stored in advance in the memory of control part 100.
Then, the effect of above-mentioned plasma-etching apparatus 2 is described.First, open gate 26, never illustrated vacuum carrying room utilizes not shown carrying arm wafer W to be moved in container handling 20 via conveyance mouth 27.Then, wafer W is handed off on electrostatic chuck 33 by the work compound of not shown lifter pin and above-mentioned carrying arm, thus is kept by absorption.Then, after closed shutter 26, utilize in vacuum pump 25 pairs of container handlings 20 and carry out vacuum exhaust, supplied the process gas (etching gas) of regulation simultaneously from gas supply system 41 by spray head 4.
On the other hand, supply the High frequency power of plasma generation from high frequency power portion 46 pairs of spray heads 4, and supply the High frequency power of bias voltage from high frequency power portion 38 pairs of mounting tables 3, generate plasma, with this plasma, etch processes is carried out to wafer W.
As mentioned above, during plasma treatment, because the wafer W in mounting table 3 exposes in the plasma, from plasma absorption heat, and mounting table 3 is cooled by the circulation of refrigerant, maintain the fiducial temperature preset, so the heat of wafer W is dispelled the heat to mounting table 3 by He gas.Therefore, wafer W by the heat balance from the heat input of plasma and the effect to mounting table 3 heat radiation, and is maintained the temperature of regulation.
In addition, because focusing ring 5 also exposes in the plasma, absorb heat from plasma, and focusing ring 5 is arranged in mounting table 3 across the conducting-heat elements 7 that thermal conductivity is high, adhesiveness due to conducting-heat elements 7 makes the lower surface of the upper surface of the lower surface of focusing ring 5 and conducting-heat elements 7, conducting-heat elements 7 and the upper surface of mounting table 3 be close to respectively, so the heat of focusing ring 5, as shown in Figure 4, by conducting-heat elements 7 promptly to mounting table 3 heat conduction.Like this, known from embodiment described later, by conducting-heat elements 7, during plasma treatment, make focusing ring 5 cool, eliminate the temperature difference of wafer W in mounting table 3 and focusing ring 5.As a result, inhibit free radical kind and byproduct of reaction optionally to enter the rear side peripheral skirt of wafer W.Like this, in plasma treatment, make focusing ring 5 cool, eliminate the temperature difference of wafer W in mounting table 3 and focusing ring 5, therefore suppress free radical kind and byproduct of reaction to become remarkable to the effect of the attachment of wafer W.
And then utilize insulating element 6 to adjust the current potential of focusing ring 5, adjustment focusing ring 5 lower than focusing ring 5 with the current potential of the current potential official post wafer W of wafer W (increasing to negative direction), the ion in plasma is introduced into wafer W.Thus, as shown in Figure 4, the track controlling the ion in plasma makes it around to side, the wafer W back side, even if form above-mentioned polymer at the wafer W back side, also can remove this polymer with sputtering.In addition, also plasma is irradiated to insulating element 6, by the sputtering of this plasma, generate O free radical from the insulating element 6 be made up of quartz, utilize this oxygen radical also can remove the polymer formed at the above-mentioned wafer W back side.
Like this, after wafer W being carried out to the etch processes of stipulated time, stop the supply of process gas, stop the supply of the High frequency power from high frequency power portion 38,46, and stop the vacuum exhaust in vacuum pump 25 pairs of container handlings 20, the outside of wafer W to container handling 20 is taken out of.
According to above-mentioned execution mode, owing to being provided with insulating element 6 and conducting-heat elements 7 in the side, below of focusing ring 5, the focusing ring 5 in plasma treatment is cooled, inhibit polymer (deposit) to side, the back side peripheral skirt attachment of wafer W.Now, because conducting-heat elements 7 and the wafer W in mounting table 3 are concentrically arranged to round shape, so focusing ring 5 is cooled roughly equably in the circumference of wafer W.In addition, owing to inhibit the temperature of focusing ring 5 to rise, temperature is stable, so make the track of the ion in the plasma to side, the wafer W back side change without the need to worrying because of the variations in temperature of focusing ring 5.Therefore, it is possible to stably removed the polymer formed in side, the wafer W back side by sputtering, reduce the adhesion amount of above-mentioned polymer.
In addition, the radial direction of insulating element 6 and the wafer W of conducting-heat elements 7 in mounting table 3 is disposed adjacent mutually, focusing ring 5 is positioned on insulating element 6 and conducting-heat elements 7.Now, focusing ring 5 is defined height, so without the need to worrying that the height of focusing ring 5 changes, inhibit the disorder of the plasma of wafer W periphery edge by the insulating element 6 be made up of quartz.In addition, owing to not having across conducting-heat elements 7 between insulating element 6 and focusing ring 5, the impedance without the need to the side, below worrying focusing ring 5 changes, and the current potential of the focusing ring in plasma treatment is stable.
Like this, between focusing ring 5 and mounting table 3, across the position that the two is electrically connected by insulating element 6, and by conducting-heat elements 7, the two hot linked position is existed respectively.Thus, separately carry out the electric control based on insulating element 6 and the temperature based on conducting-heat elements 7 controls, thus these can be suppressed to control complicated.And then in the above-described embodiment, owing to being configured such that insulating element 6 is positioned at mounting side, region 32, insulating element 6 is positioned near the wafer W in mounting table 3, promptly carries out the removing of the above-mentioned polymer utilizing O free radical to carry out.
Above, in the present embodiment, as long as insulating element and conducting-heat elements are between focusing ring 5 and mounting table 3, the radial direction of the wafer W in mounting table 3 is adjacent to mutually arrange, also can as shown in Figure 5, the mode being arranged on the outside of the radial direction of above-mentioned wafer W with insulating element 6 relative to conducting-heat elements 71 configures.In this example, conducting-heat elements 71, is arranged in the mode that inner circumferential surface 70 is consistent in the vertical direction with the inner peripheral surface 52 of the side, bottom of the stage portion 51 of focusing ring 5.
Then, for the second execution mode of the present invention, be described with reference to Fig. 6 and Fig. 7.This example, in the structure concentrically arranged to round shape in the foreign side in mounting region 32 at insulating element and conducting-heat elements, the first insulating element 62a and the second insulating element 62b is made mutually to be adjacent to arrange with the left and right sides (both sides of the radial direction of the wafer W in mounting table 3) of conducting-heat elements 72 respectively.Such structure, the conducting-heat elements 72 of insulating element 62a, 62b and sheet is made to form ring-type respectively, at stage portion 31 upper surface of mounting table 3, from the inner side of the radial direction of the wafer W mounting table 3 toward the outer side, the first insulating element 62a, conducting-heat elements 72, second insulating element 62b is made to be formed by the arrangement of this order.
In this example similarly, focusing ring 5 is made to be set up with the state being limited its height and position by the first insulating element 62a be such as made up of quartz and the second insulating element 62b.In addition, because conducting-heat elements 72 has adhesiveness, made between focusing ring 5 and conducting-heat elements 72 by its adhesiveness, and be close to respectively between conducting-heat elements 72 and mounting table 3.
In the structure shown here, between mounting table 3 and focusing ring 5, insulating element 62a, 62b and conducting-heat elements 72 are adjacent to arrange in the lateral direction, so focusing ring 5 is cooled in the circumferential roughly equably, can reduce the adhesion amount of the polymer being attached to side, the wafer W back side.In addition, the both sides due to the left and right directions at conducting-heat elements 72 are provided with insulating element 6, can further suppress focusing ring 5 height change state under, guarantee the adaptation of conducting-heat elements 72 and focusing ring 5 and mounting table 3.And then, can make to control to carry out independently to the electric control of focusing ring 5 with based on the temperature of conducting-heat elements 72 pairs of focusing rings 6 based on insulating element 62a, 62b.
And then the state that conducting-heat elements 71 is surrounded by insulating element 62a, 62b, so conducting-heat elements 72 is not easy by plasma sputtering.Thereby, it is possible to suppress consumption and the deterioration of conducting-heat elements 72, the temperature of carrying out focusing ring 5 steadily in the long term controls.
Then, Fig. 8 ~ Figure 10 is used to be described for modified embodiment of the present embodiment.The example of Fig. 8 represents in the structure that insulating element 63 and conducting-heat elements 73 are concentrically arranged to round shape in outside and this mounting region 32 in mounting region 32, makes conducting-heat elements 73 along the circumference of the wafer W in mounting table 3, setting spaced at intervals.Now, along A-A line in Fig. 8 cross section as shown in Figure 6.
Now, can also as shown in Figure 9, in the inside of insulating element 64, by multiple conducting-heat elements 74 and the concentrically round shape ground setting spaced at intervals of mounting region 32.Now, along B-B line in Fig. 9 cross section as shown in Figure 6.
The structure of above-mentioned Fig. 8 and Fig. 9, separates predetermined distance to the insulating element 63,64 be such as made up of quartz ring and forms otch, at this cutting part, inserts by having conducting-heat elements 73,74 that fusible elastomer formed and forming.Now, conducting-heat elements 73,74 is close to its upper surface and focusing ring 5, and the mode that lower surface and mounting table 3 are close to is arranged on insulating element 63,54 respectively.
In said structure, insulating element 63 (64) and conducting-heat elements 73 (74), with between mounting table 3 and focusing ring 5, the mode that insulating element 63 (64) is adjacent with the left and right sides of conducting-heat elements 73 (74) is arranged, therefore, it is possible to obtain the effect same with above-mentioned second execution mode.
In addition, example shown in Figure 10 is in the structure representing that insulating element and conducting-heat elements are concentrically arranged to round shape in outside and this mounting region 32 in mounting region 32, by conducting-heat elements 75a, 75b of insulating element 65a ~ 65c and sheet, arrange the radial superimposed layer of the wafer W in mounting table 3.Such structure, as shown in Figure 10 (a), (b), prepare the insulating element 65a ~ 65c be made up of quartz ring, clamp the thin sheet conducting-heat elements 75a (75b) of ring-type with 2 insulating element 65a, 65b (65b, 65c) from both sides and form.Conducting-heat elements 75a (75b), is close to its upper surface and focusing ring 5, and the mode that lower surface and mounting table 3 are close to is arranged on insulating element 65a ~ 65c.
Herein, in order to focusing ring 5 and mounting table 3 thermo-contact, the two ends up and down of above-mentioned conducting-heat elements 75a (75b) are arranged closely with the lower surface of focusing ring 5 and the upper surface of mounting table 3 and lower surface respectively.Now, can also as shown in Figure 10 (c), the two ends up and down of conducting-heat elements 75a (75b) are set to stretch out from the upper surface of insulating element 65a ~ 65c and lower surface, and at the lower surface of focusing ring 5 and the upper surface of mounting table 3, be provided with the groove portion 50,30 corresponding with above-mentioned extension, by this extension and groove portion 50,30, conducting-heat elements 75a (75b) is close to focusing ring 5 and mounting table 3.
In this structure, insulating element 65a ~ 65c and conducting-heat elements 75a, 75b, arranged, so can obtain the effect same with above-mentioned second execution mode in the mode that insulating element between mounting table 3 and focusing ring 5 65 is adjacent with the left and right sides of conducting-heat elements 75.
Then, with reference to Figure 11, the 3rd execution mode of the present invention is described.This example is configured between insulating element 66 and mounting table 3, arrange multiple downside conducting-heat elements 76a, and between insulating element 66 and focusing ring 5, arrange multiple upside conducting-heat elements 76b.Above-mentioned multiple downside conducting-heat elements 76a, is close to the two between insulating element 66 and the upper surface of mounting table 3, respectively along focusing ring 5 annularly and arrange separated from each other in the radial direction of focusing ring 5.In addition, above-mentioned multiple upside conducting-heat elements 76b, is close to the two between insulating element 66 and the lower surface of focusing ring 5, respectively along focusing ring 5 annularly and arrange separated from each other in the radial direction of focusing ring 5.
Specifically, such as, as shown in Figure 11 (b), upper and lower by the insulating element 66 be such as made up of quartz, the downside conducting-heat elements 76a of the sheet of multiple such as 4 ring-types that are sticked and upside conducting-heat elements 76b and forming.In addition, at each conducting-heat elements 76a, 76b, in order to make the atmosphere in the space between conducting-heat elements 76a, 76b mutually adjacent in the radial direction of focusing ring 5 and container handling 20, multiple notch 77 is circumferentially formed with.In addition, in this example, the conducting-heat elements 76b of the conducting-heat elements 76a and side, the back side that are set to the surperficial side of insulating element 66 does not overlap each other at above-below direction, but it is overlapped at above-below direction also can be set to above-mentioned conducting-heat elements 76a, 76b.In addition, also can make above-mentioned notch 77 be formed in downside conducting-heat elements 76a and upside conducting-heat elements 76b at least one party.
In the structure shown here, in plasma treatment, the heat of focusing ring 5, moves according to the path of upside conducting-heat elements 76b → insulating element 66 → downside conducting-heat elements 76a → mounting table 3, and therefore in plasma treatment, focusing ring 5 is cooled.Thus, equally with above-mentioned first execution mode the adhesion amount of polymer to side, wafer W back side peripheral skirt can be reduced.In addition, because conducting-heat elements 76a, 76b and mounting region 32 are concentrically arranged to round shape, so circumferentially can cool roughly equably focusing ring 5.
In addition, because conducting-heat elements 76a, 76b contact with insulating element 66, insulating element 66 and may bubble be mixed between conducting-heat elements 76a, 76b during stickup.Now, because be formed with notch 77 at conducting-heat elements 76a, 76b, to when carrying out vacuum exhaust in container handling 20, bubble spills from this notch 77, as a result, become insulating element 66 during plasma treatment and there is the state of bubble between conducting-heat elements 76a, 76b hardly.Thus, conducting-heat elements 76a, 76b are consistent with the contact condition (whole lower surface of focusing ring 5) in face of insulating element 66, so the heat of focusing ring 5 moves to mounting table 3 side roughly equably in face, temperature adjustment can be carried out roughly equably to focusing ring 5.
Above, in the present invention, as shown in Figure 12 (a), in the radial direction of the wafer W of height and position in mounting table 3 of the lower surface of focusing ring 5, mutually different situations is also included within scope of the present invention.In addition, as shown in Figure 12 (b), such as, when making insulating element 68 and conducting-heat elements 78 be arranged in the radial direction of above-mentioned wafer W, make a part for conducting-heat elements 78 enter the inside of insulating element 68, a part for above-mentioned left and right directions makes insulating element 68 and conducting-heat elements 78 situation stacked be in the vertical direction also included within scope of the present invention.
In addition, also can be as shown in figure 13, between the upper surface and the lower surface of focusing ring 5 of mounting table 3, concentrically round shape insulating element 69 is set relative to the center of the wafer W in above-mentioned mounting table 3, and throughout the lateral surface of the lateral surface of this mounting table 3, the lateral surface of insulating element 69 and above-mentioned focusing ring 5, with these lateral surfaces closely and conducting-heat elements 79 is set along focusing ring 5.In the structure shown here, the heat of focusing ring 5 is by conducting-heat elements 79 to mounting table 3 heat conduction, so when plasma treatment, focusing ring 5 is cooled.Now, conducting-heat elements 79 also can be configured to ring-type, also can relative to the concentrically round shape ground setting spaced at intervals of the center of the wafer W in mounting table 3.
[embodiment]
Use the plasma-etching apparatus of Fig. 1 to carry out plasma treatment to wafer W, measure the variations in temperature of focusing ring 5 now.Now, the High frequency power of 1200W is supplied from the high frequency power portion 46 of plasma generation, wafer W on mounting region 32 is set as 30 DEG C, supply CF class gas is as process gas, continuously plasma treatment is carried out to 5 wafer W, by the temperature (embodiment) using the thermometer of the interference of low-coherent light to measure focusing ring 5.In addition, use quartz ring as insulating element 6, use the thickness formed by the macromolecule Silica hydrogel being filled with aluminium oxide to be the heat conducting film of 0.5mm as conducting-heat elements 7.In addition, as comparative example, also same plasma treatment is carried out to the situation not arranging conducting-heat elements 7, measure the temperature of focusing ring 5 now.
Figure 14 represents this result.In known comparative example, embodiment, all rise in the temperature of the moment focusing ring 5 of plasma generation, carry out heat input from plasma to focusing ring 5.But, in an embodiment, have passed through the processing time even if known, the variations in temperature of focusing ring 5 is also roughly the same, by arranging conducting-heat elements 7, the heat of focusing ring 5 is moved to mounting table 3, inhibit heat to the accumulation of focusing ring 5, focusing ring 5 can be cooled to about about 50 DEG C.On the other hand, in a comparative example, the known process with the processing time, the temperature of focusing ring 5 rises, and when continuing the irradiation of plasma, accumulation of heat in focusing ring 5, focusing ring 5 rises to about 230 degree.
Above, the present invention can be applied to the plasma processing apparatus not only semiconductor wafer W also being carried out to plasma treatment to substrates such as the glass substrates of FPD (flat-panel monitor).In addition, the present invention can be applied to except carrying out etch processes, also carries out the plasma processing apparatus of the plasma treatment of ashing, CVD (chemical vapour deposition (CVD)), plasma process etc.
Claims (5)
1. a plasma processing apparatus, at the substrate-placing region of mounting table mounting substrate, described mounting table to be arranged in vacuum tank and to be also used as lower electrode, described plasma processing apparatus makes process gaseous plasma to applying High frequency power between described lower electrode and upper electrode, plasma treatment is implemented to substrate, the feature of described plasma processing apparatus is, comprising:
Ring component, it is arranged in described mounting table in the mode of surrounding described substrate-placing region, for adjusting the state of plasma;
Insulating element, between the lower surface of its upper surface in described mounting table and described ring component along this ring component relative to the center of the substrate in described mounting table be concentric circles arrange, for adjusting the potential difference of this ring component and substrate, thus the ion in plasma is introduced the side, the back side of substrate; With
Conducting-heat elements, it is located at position adjacent with described insulating element in the radial direction of substrate, and is close to this upper surface and lower surface between the upper surface and the lower surface of described ring component of described mounting table, and arranges along described ring component,
Described insulating element is arranged at the inner side of described conducting-heat elements in the radial direction of substrate.
2. plasma processing apparatus as claimed in claim 1, is characterized in that:
The upper surface of described insulating element contacts with described ring component.
3. plasma processing apparatus as claimed in claim 1 or 2, is characterized in that:
Inner side in the described radial direction of described conducting-heat elements is provided with described insulating element, and the arranged outside in the described radial direction of described conducting-heat elements has described insulating element.
4. a plasma processing apparatus, at the substrate-placing region of mounting table mounting substrate, described mounting table to be arranged in vacuum tank and to be also used as lower electrode, described plasma processing apparatus makes process gaseous plasma to applying High frequency power between described lower electrode and upper electrode, plasma treatment is implemented to substrate, the feature of described plasma processing apparatus is, comprising:
Ring component, it is arranged in described mounting table in the mode of surrounding described substrate-placing region, for adjusting the state of plasma;
Insulating element, between the lower surface of its upper surface in described mounting table and described ring component along this ring component relative to the center of the substrate in described mounting table be concentric circles arrange, for adjusting the potential difference of this ring component and substrate, thus the ion in plasma is introduced the side, the back side of substrate; With
Conducting-heat elements, it is located at position adjacent with described insulating element in the radial direction of substrate, and is close to this upper surface and lower surface between the upper surface and the lower surface of described ring component of described mounting table, and arranges along described ring component,
Described conducting-heat elements is arranged at the inner side of described insulating element in the radial direction of substrate.
5. plasma processing apparatus as claimed in claim 4, is characterized in that:
The upper surface of described insulating element contacts with described ring component.
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| JP2011-072677 | 2011-03-29 | ||
| JP2011072677A JP5741124B2 (en) | 2011-03-29 | 2011-03-29 | Plasma processing equipment |
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| CN102737940A CN102737940A (en) | 2012-10-17 |
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| US (1) | US20120247954A1 (en) |
| JP (1) | JP5741124B2 (en) |
| KR (1) | KR101910670B1 (en) |
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| JP6345030B2 (en) * | 2014-08-11 | 2018-06-20 | 東京エレクトロン株式会社 | Plasma processing apparatus and focus ring |
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| KR102581226B1 (en) * | 2016-12-23 | 2023-09-20 | 삼성전자주식회사 | Plasma processing device |
| CN111048394A (en) * | 2017-01-05 | 2020-04-21 | 东京毅力科创株式会社 | Plasma processing apparatus |
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| JP7055040B2 (en) * | 2018-03-07 | 2022-04-15 | 東京エレクトロン株式会社 | Placement device and processing device for the object to be processed |
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| JP7186646B2 (en) * | 2019-03-22 | 2022-12-09 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND METHOD FOR DETECTING PRESENCE OF FOCUS RING ON PLACEMENT |
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| JP2012209359A (en) | 2012-10-25 |
| KR20120112147A (en) | 2012-10-11 |
| TW201301383A (en) | 2013-01-01 |
| CN102737940A (en) | 2012-10-17 |
| US20120247954A1 (en) | 2012-10-04 |
| KR101910670B1 (en) | 2018-10-22 |
| TWI566296B (en) | 2017-01-11 |
| JP5741124B2 (en) | 2015-07-01 |
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