TWI523929B - 切割膜 - Google Patents

切割膜 Download PDF

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TWI523929B
TWI523929B TW100132826A TW100132826A TWI523929B TW I523929 B TWI523929 B TW I523929B TW 100132826 A TW100132826 A TW 100132826A TW 100132826 A TW100132826 A TW 100132826A TW I523929 B TWI523929 B TW I523929B
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styrene
film
base film
dicing
cutting
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TW201217486A (en
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丸山和彥
磯部雅俊
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住友電木股份有限公司
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    • H—ELECTRICITY
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/02—Homopolymers or copolymers of hydrocarbons
    • C08L25/04—Homopolymers or copolymers of styrene
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    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
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    • C08L53/02—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
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    • C09J7/22—Plastics; Metallised plastics
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H01L21/4896—Mechanical treatment, e.g. cutting, bending
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/414—Additional features of adhesives in the form of films or foils characterized by the presence of essential components presence of a copolymer
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2409/00—Presence of diene rubber
    • C09J2409/006—Presence of diene rubber in the substrate
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2425/00—Presence of styrenic polymer
    • C09J2425/006—Presence of styrenic polymer in the substrate
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Description

切割膜
本發明係關於一種切割膜。
本案係根據2010年9月13日於日本申請之特願2010-204062號及2010年9月30日於日本申請之特願2010-220410號，主張優先權，將該等之內容爰用至此。
於製造半導體裝置之步驟中，在切斷半導體晶圓或封裝體等之半導體構件時，係使用切割膜。切割膜係為了貼附半導體構件並將其切割(切斷、個別片化)，進一步將該切割膜擴張等，藉此拾取(pickup)上述半導體晶圓等而使用。
一般而言，切割膜係由基材膜與黏著層所構成。習知技術中，作為基材膜大多使用聚氯乙烯(PVC)樹脂膜。然而，為了防止PVC樹脂膜所含有之可塑劑的附著所造成之半導體構件的污染、以及對於環境問題意識之提高，最近開發出使用烯烴系樹脂與乙烯乙烯醇系樹脂及乙烯甲基丙烯酸丙烯酸酯系樹脂等非PVC樹脂系材料的基材膜(例如專利文獻1)。
又，近年來，隨著半導體構件之小型化、薄型化之進展，在切割膜之厚度精度有誤差之情況，在切割步驟中，切割刀片之接觸方法會產生差異，而產生容易發生半導體晶圓破裂之問題。又，若膜厚度精度有誤差，則會產生半導體構件之切割殘骸或切割時之切屑或基材碎鬚(從基材膜之切割線延伸之鬚狀的切割殘渣)，亦會產生附著於半導體裝置之問題。尤其在切斷半導體封裝體時，大多使用厚度大的切割刀片，故相較於切斷半導體晶圓時，產生基材碎鬚的問題明顯浮現。又，將半導體構件貼附於切割膜並進行切割後，為了擴大經切斷的半導體構件之間的間隔，係進行切割膜之擴張。此時，若基材無充分的韌性，亦會產生切割膜斷裂之問題。因此，需求在切割時可抑制基材碎鬚，且在擴張時基材亦不會斷裂之切割膜。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2003-257893
本發明之目的在於提供半導體製造時之切割步驟中切屑或基材碎鬚的產生少，且具有合適的擴張性之切割膜。
本發明之切割膜係於基材膜之至少一面具有黏著層者，上述基材膜係含有(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)、以及苯乙烯系彈性體(B)。
本發明之切割膜中，上述(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)係可為苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚合物。
本發明之切割膜中，上述苯乙烯系彈性體(B)係可為從加氫乙烯基(苯乙烯-異戊二烯-苯乙烯)共聚合體、苯乙烯-乙烯-丁烯-苯乙烯共聚合體以及該等之混合物中選擇之至少1個苯乙烯系彈性體。
本發明之切割膜中，上述基材膜中之苯乙烯甲基丙烯酸烷基酯-丙烯酸烷基酯共聚合物(A)與上述苯乙烯系彈性體(B)之重量比率(A/B)，係可為A/B=65/35~45/55。
本發明之切割膜在以下之斷裂能量評估試驗中的基材膜斷裂能量係可為15mJ以上。
<斷裂能量評估試驗>
於作為試驗片之基材膜的單面，以下述切口製作條件製作十字的切口。以製作有切口的面作為下側，對十字切口的交叉點以下述落錘試驗條件實施落錘試驗。於基材膜斷裂的情況，以落錘前的錘位置能量作為斷裂能量。
<切口製作條件>
使用刀片，於厚度150μm之基材膜，十字地製作深度80μm、長度40mm以上之切口。
<落錘試驗條件>
錘：1.02kg
錘前端形狀：直徑20mm之半球狀
試驗片固定形狀：直徑40mm之圓形狀
根據本發明，可提供半導體製造時之切割步驟中切屑或基材碎鬚的產生少，且具有合適的擴張性之切割膜。
本發明之切割膜主要係於製造半導體之步驟中，在切割(切斷)半導體晶圓或半導體封裝體等之半導體構件時所使用。上述切割膜係例如貼附於半導體晶圓或半導體封裝體等，將半導體晶圓等切割，為了其後藉由擴張而拾取將半導體晶圓切斷所得之半導體元件而使用。
本發明係於切割膜之基材膜的構成成分中使用(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)、以及苯乙烯系彈性體(B)。藉此，可降低起因於基材膜樹脂的基材碎鬚之產生，並且可作成重視切割膜擴張性之設計。以下，利用圖式說明本發明之構成要件。
<基材膜>
本發明之切割膜10係如圖1所示，至少具有基材膜1與黏著層2。上述基材膜1係含有(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)、以及苯乙烯系彈性體(B)。上述(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)較佳係為苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚合物。藉由使用苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚合物，可進一步減少切割時之切屑與基材碎鬚之產生。
作為上述苯乙烯系彈性體(B)，例如可舉出苯乙烯-丁二烯共聚合體、苯乙烯-丁二烯-苯乙烯共聚合體、苯乙烯-丁二烯-丁烯-苯乙烯共聚合體、苯乙烯-異戊二烯共聚合體、苯乙烯-異戊二烯-苯乙烯共聚合體、苯乙烯-乙烯-異戊二烯-苯乙烯共聚合體、加氫乙烯基(苯乙烯-異戊二烯-苯乙烯)共聚合體、苯乙烯-乙烯-丁烯-苯乙烯共聚合體。其中尤以加氫乙烯基(苯乙烯-異戊二烯-苯乙烯)共聚合體為佳。藉由使用加氫乙烯基(苯乙烯-異戊二烯-苯乙烯)共聚合體，可製成基材膜之斷裂強度更為優異者，且可更為減少切割時之切屑與基材碎鬚之產生。又，從提高基材層之斷裂強度且減少切割時之切屑及碎鬚之同樣觀點而言，較佳為苯乙烯-乙烯-丁烯-苯乙烯共聚合體或其與加氫乙烯基(苯乙烯-異戊二烯-苯乙烯)共聚合體之混合物，尤其以苯乙烯-乙烯-丁烯-苯乙烯共聚合體為佳。
上述基材膜1中，(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)、與苯乙烯系彈性體(B)之重量比率(A/B)，係以A/B=65/35~45/55為佳。藉由將(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)之重量比率定為上述範圍下限值以上，基材膜之基材碎鬚抑制效果優異，藉由定為上述範圍上限值以下，則基材膜之斷裂強度適中。
如上所述，併用(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)與苯乙烯系彈性體(B)之切割膜，其基材碎鬚抑制效果優異，適合使用於半導體構件加工步驟中。
此外，使用含有(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)與苯乙烯系彈性體(B)的基材膜1之切割膜10，由於利用苯乙烯之硬脆性質，故可獲得以下之效果。第1，由於苯乙烯系基材之基材膜的模數高，故可例用擴張步驟而使晶片間隔更為擴張。藉此，拾取時，晶片之間發生衝撞的風險降低，可防止晶片缺角。其結果，可帶來半導體元件可靠度之提升。第2，可改善切割線所造成之脫層(剝離)。由於苯乙烯系基材較脆，因此有斷裂時之應力小的傾向。若斷裂應力小，則切割刀片對基材膜施加的壓力小，故從切割線剝離20~30μm左右，具有水從該剝離部分滲入之效果。若發生脫層，則會帶來晶片端面之污染。藉由減少脫層，可提升半導體元件之可靠度。
又，本發明之切割膜之基材膜中，在不損及本發明效果的範圍內，可視目的添加各種樹脂或添加劑等。例如，為了賦予抗靜電性，可添加聚醚/聚烯烴嵌段聚合物或聚醚酯醯胺嵌段聚合物等之高分子型抗靜電劑或碳黑等。尤其在賦予抗靜電效果之情況，從與烯烴系樹脂的相容性之觀點而言，較佳係使用聚醚/聚烯烴共聚合體之離子傳導型抗靜電劑。又，可藉由賦予彈性體而增加斷裂伸長度。
切割膜之基材膜的厚度，在半導體晶圓切割用時較佳為50μm以上且150μm以下，更佳為70μm以上且100μm以下。又，在半導體封裝體等之特殊構件切割用時較佳為100μm以上且300μm以下，更佳為150μm以上且200μm以下。藉由定於上述範圍下限值以上，擴張時之基材膜不容易斷裂，藉由定於上述範圍上限值以下，可抑制切割時基材碎鬚之產生。
根據本發明之切割膜，藉由將貼附有切割後半導體構件之切割膜擴張(拉長延伸)，擴大半導體構件(晶片)之間的間隔，而使切割後之半導體構件可容易地拾取。為了獲得合適的擴張性，以下斷裂能量評估試驗中之基材膜的斷裂能量在15mJ以上為佳。藉由定於上述下限值以上，可抑制擴張時之斷裂。斷裂能量係可藉由改變基材膜中的彈性體之調配比率而適當調整。例如可藉由調配彈性體而更為增加斷裂能量。
<斷裂能量評估試驗>
於作為試驗片之基材膜的單面，以下述切口製作條件製作十字的切口。
以製作有切口的面作為下側，對十字切口的交叉點以下述落錘試驗條件實施落錘試驗。於基材膜斷裂的情況，以落錘前的錘位置能量作為斷裂能量。
<切口製作條件>
使用刀片，於厚度150μm之基材膜，十字地製作深度80μm、長度40mm以上之切口。
<落錘試驗條件>
錘：1.02kg
錘前端形狀：直徑20mm之半球狀
試驗片固定形狀：直徑40mm之圓形狀
(黏著層)
如圖1所例示，本發明之切割膜10的基材膜1之至少單面係設有黏著層2。作為使用於黏著層2之樹脂組成物，可舉出丙烯酸系黏著劑、UV硬化性胺基甲酸酯丙烯酸酯樹脂、異氰酸酯系交聯劑等。該等之中，為了半導體構件之安裝、抑制端材翹起及缺口，較佳係使用含有極性基之丙烯酸系黏著劑。作為丙烯酸系黏著劑，較佳係例如含有羧基的丙烯酸丁酯等。藉由使用含有羧基的丙烯酸丁酯，在半導體構件之安裝、抑制端材翹起及缺口方面尤其合適。
黏著層2之厚度較佳為3μm以上且100μm以下。在切割膜之半導體晶圓切割用中，較佳為3μm以上且10μm以下。又，在封裝體等之特殊構件切割用方面，較佳為10μm以上且30μm以下。藉由將黏著層2之厚度設定為上述範圍下限值以上，被黏著體之保持力優異，而藉由設定為上述範圍上限值以下，可獲得切割時之加工性優異之切割膜。
<切割膜之製造方法的一例>
本發明之切割膜10之黏著層2的形成，係使用將用作黏著層2之樹脂適當溶解或分散於溶劑中而成的塗佈液。對於基材膜1或含有基材膜1之樹脂膜，利用輥塗佈或凹版塗佈等之公知塗佈法，將上述塗佈液進行塗佈，經過乾燥而形成黏著層2。
本發明之切割膜中，在不損及本發明效果之範圍內，可視目的設置其他樹脂層。
[實施例]
利用實施例更詳細地說明本發明。惟，此等僅用於例示，本發明並不限定於此。
<基材膜之製作>
以乾式摻合將下述原料以表1及表2所示之重量調配比混合後，以Φ50mm擠出機(L/D=25，uni-melt pin screw，螺桿壓縮比=2.9)、300mm寬之coat hanger die(模口間隙=0.5mm)、擠出溫度=220℃(螺桿前端)之條件進行擠出製膜，獲得厚度150μm之片材(基材膜)。
<實施例/比較例之基材膜所使用之原料>
‧苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚合物SX100(PS Japan股份有限公司製)
‧聚苯乙烯HF77(PS Japan股份有限公司製)
‧聚丙烯FS2011C(住友化學股份有限公司製)
‧加氫乙烯基(苯乙烯-異戊二烯-苯乙烯)共聚合體Hybrar 7125(Kuraray股份有限公司製)
‧苯乙烯-乙烯-丁烯-苯乙烯共聚合體Septon 8007(Kuraray股份有限公司製)
<黏著層之製作>
使2-乙基己基丙烯酸酯30重量%、醋酸乙烯酯69重量%及2-羥基乙基甲基丙烯酸酯1重量%，於甲苯溶媒中進行溶液聚合，獲得重量平均分子量150,000之基礎樹脂。相對於此基礎樹脂100重量份，將作為能量射線硬化型樹脂之2官能胺基甲酸乙酯丙烯酸酯100重量份(三菱Rayon公司製，重量平均分子量11,000)、作為交聯劑之甲苯二異氰酸酯的多元醇加成體(CORONATE L，日本Polyurethane公司製)15重量份、作為能量射線聚合起始劑之2,2-二甲氧基-2-苯基苯乙酮5重量份溶解於醋酸乙酯中。將溶解後之樹脂以乾燥後之黏著層厚度為20μm之方式塗佈於經剝離處理之聚酯膜(厚度38μm)上，以80℃乾燥5分鐘，獲得黏著層。
<切割膜之製作>
於以表1及表2之重量調配比所得之厚度150μm的基材膜上，使用層合輥將上述黏著層以30℃進行層合，獲得切割膜。
所得之切割膜之評估係以下述項目實施。
<1>基材碎鬚之產生
將上述所得之切割膜貼附於矽鏡面晶圓(貼附於鏡面)。貼附後放置20分鐘，以下述切割條件1實施切割。將切割後之切割膜於下述UV照射條件1之下照射UV，使矽鏡面晶圓剝離後，以顯微鏡觀察經切割之切割線。對於任意鄰接之10個晶片(5×2)，以顯微鏡(25倍)觀察其切割線各邊之切屑(基材碎鬚)。其結果，基材碎鬚之合計數為2個以下者為◎，3個以上且5個以下者為○，6個以上且10個以下者為△，11個以上者為╳。
<切割條件1>
切割刀片：NBC-ZH2050-SE 27HEDD(DISCO股份有限公司製)
刀片旋轉數：30000rpm
切割速度：50mm/sec
樣品切割尺寸：5mm×5mm見方
刀片高度：75μm
使用6吋環/半導體晶圓(厚度：400μm)
<UV照射條件1>
照度：65mW/cm2
累積光量：200mJ/cm2
UV燈：高壓水銀燈H03-L21 80W/cm(Eye graphics股份有限公司製)
UV照度計：UV-PFA1(Eye graphics股份有限公司製)
<2>擴張性
使用以上述條件製作之切割膜，以下述切割條件2進行切割。之後，以下述UV照射條件2照射UV後，以下述擴張條件1實施擴張。其結果，膜未斷裂者為○，膜斷裂者為╳。
<切割條件2>
切割刀片：NBC-ZH2050-SE 27HEDD(DISCO股份有限公司製)
刀片旋轉數：30000rpm
切割速度：50mm/sec
樣品切割尺寸：5mm×5mm見方
刀片高度：75μm
使用6吋環/半導體晶圓(厚度：400μm)
<UV照射條件2>
照度：65mW/cm2
累積光量：200mJ/cm2
UV燈：高壓水銀燈H03-L21 80W/cm(Eye graphics股份有限公司製)
UV照度計：UV-PFA1(Eye graphics股份有限公司製)
<擴張條件1>
擴張量：5mm
使用8吋環
<3>斷裂能量
將基材膜以下述切割條件3實施切割為十字後，將切割線朝下，從基材膜之背面以下述落錘試驗條件1對切割線十字之交叉部實施落錘試驗。測定基材膜斷裂時之落錘前錘的位置能量，並作為斷裂能量。
<切割條件3>
切割刀片：NBC-ZH2050-SE 27HEDD(DISCO股份有限公司製)
刀片旋轉數：40000rpm
切割速度：100mm/sec
刀片高度：80μm
樣品切割尺寸：70mm×60mm見方
使用6吋環
<落錘試驗條件1>
錘：1.02kg
錘前端形狀：直徑20mm之半球狀
試驗片固定形狀：直徑40mm之圓形狀
<4>擴張時之晶片間距離
將實施例1及比較例5之切割膜貼附於4吋晶圓，以下述切割條件4進行切割後，以下述UV照射條件3照射UV。其後，以下述擴張條件2進行擴張。於經擴張之狀態測定5個任意晶片間距離，以其平均值作為晶片間距離。
<切割條件4>
切割刀片：NBC-ZH2050-SE 27HEDD(DISCO股份有限公司製)
刀片旋轉數：40000rpm
切割速度：50m/min
基材切入量：從黏著劑層起算35μm
樣品切割尺寸：10mm×10mm
<UV照射條件3>
照度：65mW/cm2
累積光量：200mJ/cm2
UV燈：高壓水銀燈H03-L21 80W/cm(Eye graphics股份有限公司製)
UV照度計：UV-PFA1(Eye graphics股份有限公司製)
<擴張條件2> 擴張量：5mm <5>晶片切割線部分之脫層(剝離) 將實施例1及比較例5之切割膜貼附於4吋晶圓，以下述切割條件5進行切割後，以下述UV照射條件4照射UV。其後，將晶片從基材膜剝離，以顯微鏡觀察切割線，測定從切割線端部之剝離部分的大小。 <切割條件5>
切割刀片：NBC-ZH2050-SE 27HEDD(DISCO股份有限公司製)
刀片旋轉數：40000rpm
切割速度：50m/min
基材切入量：從黏著劑層起算35μm
樣品切割尺寸：10mm×10mm
<UV照射條件4>
照度：65mW/cm2
累積光量：200mJ/cm2
UV燈：高壓水銀燈H03-L21 80W/cm(Eye graphics股份有限公司製)
UV照度計：UV-PFA1(Eye graphics股份有限公司製)
將上述實施例及比較例之評估結果示於表1及表2。實施例1~6全部可抑制基材碎鬚之產生，為良好結果。又，基材膜之擴張性亦為良好結果。另一方面，比較例2、4、5無法抑制基材碎鬚之產生，比較例1、3則為無法獲得具有充分擴張性的基材膜之結果。又，實施例1中，相較於比較例5，可增大擴張時之晶片間距離。此外，實施例1中，對於晶片之切割線部分無法確認到脫層，而比較例5中可確認到脫層。
(產業上之可利用性)
本發明之切割膜於切割時之切屑或基材碎鬚的產生少，具有作為切割膜之合適強度與良好外觀，故於半導體裝置製造之切割步驟中係適合使用作為半導體構件固定用之膜。
1‧‧‧基材膜
2‧‧‧黏著層
3‧‧‧切口
10‧‧‧切割膜
圖1為顯示本發明之切割膜一例的概略斷面圖。
圖2為本發明之斷裂能量評估試驗所使用的十字切口製作後之試驗用膜。
1．．．基材膜
2．．．黏著層
10．．．切割膜

Claims (2)

  1. 一種切割膜，係於基材膜之至少一面具有黏著層者，其特徵在於，上述基材膜係含有(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)、以及苯乙烯系彈性體(B)，上述(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)係為苯乙烯-甲基丙烯酸烷基酯-丙烯酸烷基酯共聚合物，上述苯乙烯系彈性體(B)係從加氫乙烯基(苯乙烯-異戊二烯-苯乙烯)共聚合體、苯乙烯-乙烯-丁烯-苯乙烯共聚合體以及該等之混合物中選擇之至少1個苯乙烯系彈性體，上述基材膜中之(甲基)丙烯酸烷基酯之至少2種與苯乙烯之共聚合物(A)、與苯乙烯系彈性體(B)之重量比率(A/B)，係A/B=65/35~45/55。
  2. 如申請專利範圍第1項之切割膜，其中，上述基材膜在以下之斷裂能量評估試驗中的斷裂能量係為15mJ以上；<斷裂能量評估試驗>於作為試驗片之基材膜的單面，以下述切口製作條件製作十字的切口；以製作有切口的面作為下側，對十字切口的交叉點以下述落錘試驗條件實施落錘試驗；於基材膜斷裂的情況，以落錘前的錘位置能量作為斷裂能量；<切口製作條件>使用刀片，於厚度150μm之基材膜，十字地製作深度80μm、長度40mm以上之切口； <落錘試驗條件>錘：1.02kg錘前端形狀：直徑20mm之半球狀試驗片固定形狀：直徑40mm之圓形狀。
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