TWI502653B - 半導體晶片封裝方法 - Google Patents

半導體晶片封裝方法 Download PDF

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TWI502653B
TWI502653B TW098139240A TW98139240A TWI502653B TW I502653 B TWI502653 B TW I502653B TW 098139240 A TW098139240 A TW 098139240A TW 98139240 A TW98139240 A TW 98139240A TW I502653 B TWI502653 B TW I502653B
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encapsulating material
substrate
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TW201030861A (en
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Sen Amlan
Chin-Guan Khaw
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Advanpack Solutions Pte Ltd
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Description

半導體晶片封裝方法 【相關說明書】
有關的PCT專利說明書和本案同一天提出申請，但其係相關於半導體晶片封裝系統。
本發明係關於一種半導體晶片封裝方法，其和相關於注入或轉注(transfer)封膠(molding)的空腔鑄模(cavity mould)作法不同，特定地來說，本發明相關於使封裝材料放電至一空腔中，此空腔由放置在所屬基材或承載具上的封裝間隔件而界定。
用於半導體晶片封裝的傳統方法是關聯於晶片焊接、線焊接、封裝成形(encapsulation moulding)、電解除膠(deflashing)和分離成形(singulation)的製程。轉注成形(transfer moulding)通常用於封裝一群半導體晶片，且個別焊線和傳導基材相互連接以形成半導體封裝構件。在製程中，具有線焊接晶片的傳導基材是放在分離空腔的下方鑄模板中，藉由將上方鑄模板夾放(clamping)到下方鑄模板上，基材周圍則位在分離鑄模板間、注入液化封裝材料至封膠空腔中，並允許封裝材料硬化，晶粒(chip)為實體封接而保護其免於外在環境干擾。藉由將塑膠封裝構件分離成形，可獲得單獨的半導體晶片。
因使用高壓傳送封裝材料，一些焊線可能會變位或移動，而和相臨焊線接觸，其它問題發生處為設計容置槽、橫流道、閘道和通氣孔的領域，其決定了足以符合無空隙封裝的封裝材料特性。此些鑄模非常昂貴且需要經常進行清潔作業，以自鑄模內通道移除封裝材料。
故可看出有必要提出一種新的半導體晶片封裝方法，以克服現存先前技術的缺點。
以下說明提出概要描述以提供本發明所屬技術領域中具有通常知識者能夠基本瞭解本發明，發明內容並不能視為本發明的概觀，且並不能用來認定本發明的關鍵特徵。而是，它是用來以一般化形式提出本發明的發明概念，作為下列實施方式的前導部分。
本發明尋求一種簡易且節省成本的半導體晶片封裝系統和方法，其和相關於注入或轉注封膠的空腔鑄模之傳統作法不同，實際上，封裝間隔件工具的製作成本低於傳統空腔鑄模的製作成本。依據本發明，例如4極壓具的小型且簡易壓具(press)，足以使用於本發明中進行簡易平板化作業及加壓板，此些工具為通用簡易平狀金屬部件，而能避免掉使用空腔鑄模的情況中需要經常進行清潔，而這也可以解釋使用本發明所獲致的高生產力。
在一實施例中，本發明提供一種半導體晶片封裝方法，方法包括：貼附封裝間隔件(102,302)於基材上，其上貼附一些半導體晶片，使得透過位於封裝間隔件(102,302)上的孔洞(104,304)看見一群晶片，此群晶片為依照基材上的多個傳導圖案而放置的一群晶片；分配封裝材料至孔洞中；以及允許封裝材料硬化。
現在本發明之一或多個特定選擇性實施例將參照所附圖示詳細說明，然而，本發明所屬技術領域中具有通常知識者應可明白本發明的實施並不限定於此些特定細節。一些細節並不贅述於此，以避免模糊本發明，為簡化參照起見，當表示相同於或相似於圖示的特徵時，一般參考符號或一連串符號將通用於全部圖示。
第1A圖顯示依照本發明一實施例的封裝系統100，如第1A圖所顯示的，封裝系統100是由貼附至半導體基材或承載具150的封裝間隔件102組成。一或多個半導體晶片或晶粒160為依照基材/承載具150上的傳導圖案而貼附到基材/承載具，晶片/晶粒160可為焊線裝置且基材為其所屬焊接板，例如QFN引線架(leadframe)、彈性基材、球柵(ball grid)基材等。封裝間隔件102具有多個穿通孔洞104，為簡化描述起見，第1A顯示簡易封裝間隔件，其具有一列孔洞104，其中當封裝間隔件102貼附至基材/承載具150時，一群晶片/晶粒160置放在每一孔洞104內。沿著每一孔洞104的一或多側，具有一或多個溢流容置槽110。依照將被封裝的晶片/晶粒160高度和過填滿晶片/晶粒頂部的量，而預定出孔洞104的厚度。每一溢流容置槽110藉通氣孔114而連接於相對孔洞104，藉由以封裝材料103填滿孔洞104、施加熱和壓力於封裝材料上，以便減少其內的任何空隙空間、允許封裝材料硬化，並於後分離成型被封裝的晶片/晶粒為單獨封裝構件，封裝系統100提供簡易及節省成本的方法以形成半導體封裝構件。
封裝間隔件102不必具有如第1A圖顯示的板狀物，在另一實施例中，封裝間隔件成形為單獨封裝環102。第1B圖顯示封裝環102成形為四邊形，但它並不應僅限於此種形狀，如先前實施例中，溢流容置槽110藉通氣孔114連接至封裝環102內。
在封裝環102的另一實施例中，具有額外溢流容置槽110a，在一實施例中，額外溢流容置槽110a是相對溢流容置槽110而置放。在另一實施例中，額外溢流容置槽110a形狀為環繞的，且置放在相對溢流容置槽110的封裝環角落。在再一實施例中，封裝環具有此種額外溢流容置槽110a和所屬通氣孔114a的兩種形態。
在一實施例中，封裝間隔件102是由金屬所構成，在另一實施例中，封裝間隔件是由熱塑性塑膠(thermoplastic)所構成。封裝間隔件可由傳統的機械加工(machining)、模製(moulding)、蝕刻、雷射切割(laser cutting)或多種成形方法而形成。舉例來說，封裝間隔件102可由在金屬組件上進行蝕刻而製成，較佳地可由銅製成。在另一例子中，藉由以金屬為板料，例如銅，封裝間隔件102可由遮罩金屬組件並製作出曝光的金屬組件而製成。封裝間隔件的材料並不如此受限，可使用低成本且易於由一般機械加工或成形製程形成的任何其它材料。
在第1A圖和第1B圖中，所顯示的封裝間隔件/環102是由單層所組成，在另一實施例中，封裝間隔件/環102a是由兩或多層所構成，其中相臨層可藉由黏著劑而接合。通氣孔114、通氣孔114a和溢流容置槽110、溢流容置槽110a的深度可由構成封裝間隔件/環102a之相關層狀物的厚度而界定出。本發明的一優點在於製作出封裝間隔件102的層狀物為平固式(plain solid)或具有孔洞104，依此方式，封裝間隔件102的高度是依照將被封裝的晶片160而設置。
在使用上，藉由黏著劑，可架設封裝間隔件102和封裝間隔件102a於基材150上，第2A圖至第2G圖繪示使用上述封裝間隔件/環102、102a的半導體晶片/晶粒封裝製程200。如同第2A圖顯示的，一群晶片/晶粒160依照基材上的傳導圖案，而架設在基材150上，如標號210所示。在第2B圖中，封裝間隔件/環102、102a藉由黏著劑118而架設在基材150上，如標號220所示。然後分配封裝材料103至封裝間隔件102、102a的每一孔洞104中或封裝環102、102a中，如標號230所示，直到封裝材料達到封裝間隔件/環102、102a的頂部，並即將經由對應的通氣孔114、114a而溢流至溢流容置槽110、110a內。可用人工作業(manually)或經由量測系統而自動地(automatically)進行封裝材料的分配。如第2D圖顯示的，填滿孔洞後，可施加壓力於封裝材料的表面上，如標號240所示。之後，施加覆蓋片130於封裝間隔件/環102、102a的頂部，以罩住(cover)封裝材料103，如標號250所示。整個組合件接著放置在壓具內，於此，依照孔洞104而將整個組合件平坦化、塑形或定出尺寸，如標號260所示，或者在封裝環102、102a內，施加熱或壓力至封裝材料103，如標號265所示。可於預定時期維持熱和壓力，以允許封裝材料103硬化，至少部分地硬化。第2G圖顯示在製程100後段，基材150上的晶片160被封裝在封裝間隔件102、102a的孔洞104內側，然後，整個組合件可放置在烘箱內側以使封裝材料103完全硬化。在封裝材料103充分硬化後，將被封裝的晶片/晶粒分離成形，以形成單獨的半導體封裝構件。
第3A圖顯示依照本發明另一實施例的封裝系統300，封裝系統300是由基材/承載具150、封裝間隔件302和封裝材料傳送層350所構成。如第3A圖所示，封裝間隔件302是貼附在基材/承載具150上，且封裝材料傳送層350接著貼附到封裝間隔件302，這種貼附作業可採用黏著劑118，當解釋完封裝系統300的單獨部件，本發明就清楚多了。
第3B圖顯示依照本發明一實施例的封裝間隔件302，封裝間隔件302可例如為一延長帶，其具有多個孔洞304。在第3B圖中，較簡易的說明是，沿著延長帶將孔洞304排成一列，但並非如此受限。如同在先前的實施例中，一群晶片/晶粒160是貼附到基材/承載具150，使得在孔洞304內可看見晶片/晶粒，且孔洞304處的封裝間隔件302厚度界定出晶片/晶粒160周圍封裝材料的厚度。
第3B圖顯示出延長帶尺寸較短的情況，具有四種高度起伏320。界定出高度起伏320的尺寸，以提供手指和姆指抓握空間，舉例來說，這情況是當封裝間隔件302將自基材/承載具150卸除，或者在封裝材料已硬化後，當封裝材料傳送層350將自封裝間隔件302卸除。
封裝間隔件302的右側具有較左手側大的邊緣，參見第3B圖，在右手邊緣，封閉假想線306顯示出當封裝材料傳送層350貼附至封裝間隔件302時，儲存於封裝材料傳送層350中封裝材料103的位置。位於第3B圖中所見的封裝間隔件302後側的下凹閘道308自封閉假想線306內側延伸到所屬孔洞304。另一假想線所界定的板309穿過下凹閘道308，可在封裝材料傳送到孔洞304中並至少已部分硬化後，將板309右手側的封裝間隔件302區域破碎或剪切掉。如第3B圖所見，在每一孔洞304的左側或右側，存在溢流容置槽310。通氣孔314連接每一溢流容置槽310至對應孔洞304。
在一實施例中，封裝間隔件302由單層所構成，舉例來說，當封裝間隔件302為金屬，藉由把金屬佈植於基材而製成組裝層(built-up layer)，同時凹下處或孔洞可藉由遮罩和蝕刻曝光金屬表面而形成。在另一實施例中，封裝間隔件302a由兩或多層所構成，相臨層可藉由黏著劑接合，在另一例子中，相臨層可疊合在一起，下凹閘道308、通氣孔314和溢流容置槽310的深度可由構成封裝間隔件302a的關聯層之厚度所界定。
第3C圖顯示依照本發明一實施例的用於封裝間隔件302、302a的封裝材料傳送層350，如第3A圖所示，定出封裝材料傳送層的尺寸以符合封裝間隔件302、302a，其中封裝材料是儲存在容置槽352中。封裝材料傳送層350是由薄的彈性塑膠所構成，但其具有足夠的強度和回復能力以將封裝材料保存在容置槽352中。在一例子中，封裝材料傳送層350可由傳統塑膠成形，例如注入或轉注成形而製成。在使用前，可用卸除層罩住封裝材料傳送層350，藉由移除卸除層，使封裝材料傳送層350上的黏著劑曝光，之後可將封裝材料傳送層350貼附到封裝間隔件302、302a上。在使用上，封裝系統300位於壓具內側，且容置槽352上的壓力使容置槽破裂以經由下凹閘道308傳送封裝材料至所屬孔洞304，而對放置在基材/承載具150上的晶片/晶粒160進行封裝。包圍晶片/晶粒的封裝材料已硬化後，封裝材料傳送層350可被卸除，選擇性地，可使封裝間隔件304、304a以及封裝材料傳送層350破碎或剪切於板309上。
第3D圖顯示依照本發明另一實施例的封裝間隔件302b，除了下凹閘道起始於下凹處308a外，封裝間隔件302b相似於封裝間隔件302、302a。相關於所符合的封裝材料傳送層351上的個別封裝材料容置槽353的每一下凹處308a顯示在第3E圖中。在另一實施例中，包圍下凹處308a的區域可被塑形或定出尺寸以覆蓋所屬封裝材料容置槽353，包圍下凹閘道308的區域足以讓封裝材料傳送層351黏著，以允許封裝材料被傳送入孔洞304，使得包圍下凹處308a和下凹閘道308的區域成為多餘的，在移除時，這些多餘材料形成開孔324。
第4A圖至第4F圖繪示使用封裝間隔件302、302a、302b的半導體晶片封裝製程，如第4A圖所顯示的，一群晶片160依照基材上的傳導圖案而架設在基材150上，如標號410所示。在第4B圖中，封裝間隔件302、302a、302b是例如藉由黏著劑而架設在基材上，如標號420所示。在第4C圖中，封裝材料傳送層350、351的容置槽或穴352、353填滿了封裝材料103，如標號430所示。在第4D圖中，封裝材料傳送層350、351於後貼附到封裝間隔件302、302a、302b，整個組合件或系統之後放置在壓具內側，依照孔洞304在此進行平板化、塑形和定出尺寸的作業，施加熱和壓力至封裝材料103，如標號440所示。接著讓封裝材料傳送層350、351的容置槽或穴352、353破裂，如標號450所示，舉例來說，藉由延伸容置槽/穴上的柱塞(ram)方式，如第4E圖所示。可於預定時期維持熱和壓力，以允許封裝材料103硬化，至少部分地硬化，如第4F圖所示。在封裝材料硬化且組合件自壓具移除後，在將晶片分離成形以形成單獨的半導體封裝構件前，讓封裝間隔件302、302a、302b和封裝材料傳送層350、351破裂或沿著板309剪切掉，如標號460所示。選擇性地，封裝材料傳送層350、351在分離成形作業前被移除，以形成單獨的半導體封裝構件。
特定實施例已描述且繪示出，需注意的是，本發明所屬技術領域中具有通常知識者可在不脫離本發明的範圍前提下，對本發明進行許多改變、修釋、變化和結合。舉例來說，封裝間隔件102、102a、302、302a、302b可具有沿著溢流容置槽110、110a、310側邊而放置的真空通道111、311。每一真空通道111、311可據具有真空通口312，以便在有需要時連接至真空系統，於後將提供有關真空通口312的真空通口362於封裝材料傳送層350上。控制閘道315連接溢流容置槽至所屬真空通道311，既然已描述過封裝系統300，封裝系統300易可應用於單獨封裝環和封裝材料傳送層351的使用上。
100．．．封裝系統
102．．．封裝間隔件
103．．．封裝材料
104．．．孔洞
102、102a．．．封裝間隔件/環
110、110a．．．溢流容置槽
111、311．．．真空通道
114、114a、314．．．通氣孔
118．．．黏著劑
130．．．覆蓋片
150．．．基材/承載具
160．．．晶片或晶粒
200．．．半導體晶片/晶粒封裝製程
210、220、230、240、250、260、265、410、420、430、440、450、460．．．步驟
300．．．封裝系統
302、302a、302b．．．封裝間隔件
304．．．孔洞
306．．．封閉假想線
308．．．下凹閘道
308a．．．下凹處
309．．．板
310．．．溢流容置槽
312．．．真空通口
320．．．高度起伏
324．．．開孔
350、351．．．封裝材料傳送層
352．．．容置槽
353．．．封裝材料容置槽
362．．．真空通口
本發明將參照所附圖示藉由非用以限定本發明的實施例進行說明，其中：
第1A圖繪示依照本發明一實施例的封裝系統。
第1B圖繪示依照第1A圖顯示的封裝系統之封裝間隔件。
第2A圖至第2G圖繪示關聯於使用第1A圖顯示的封裝系統之各種步驟。
第3A圖繪示依照本發明另一實施例的封裝系統。
第3B圖繪示依照第3A圖顯示的封裝系統實施例之封裝間隔件，而第3C圖繪示和第3B圖顯示的封裝間隔件搭配使用的封裝材料傳送層。
第3D圖繪示依照第3A顯示的封裝系統另一實施例之封裝間隔件，而第3E圖繪示和第3D圖顯示的封裝間隔件搭配使用的封裝材料傳送層。
第4A圖至第4F圖繪示使用第3A圖顯示的封裝系統之各種步驟。
150．．．基材/承載具
302．．．封裝間隔件
350．．．封裝材料傳送層
352．．．容置槽
450．．．步驟

Claims (12)

  1. 一種半導體晶片封裝(200,400)方法，包括：成型一封裝間隔件(102,302)於一基材上，該基材上貼附一些半導體晶片，使得透過位於該封裝間隔件(102,302)上的一孔洞(104,304)看見一群晶片，該群晶片係依照該基材上的多個傳導圖案而放置的一群晶片；設一封裝材料傳送層於該封裝間隔件，該封裝材料傳送層由撓性塑料製成，且該封裝材料傳送層成型有一容置槽/穴(pot)，以儲存一封裝材料；將該基材、該封裝間隔件及該封裝材料傳送層組成之組合件配置在一壓具之二壓板之間；使該封裝材料傳送層之撓性塑料製成之容置槽/穴(pot)變形，而分配該封裝材料至該孔洞中；以及在將該組合件自該壓具移除前允許該封裝材料硬化。
  2. 如申請專利範圍第1項所述之方法，其中依照該基材上的該傳導圖案，而設置該孔洞的形狀和大小。
  3. 如申請專利範圍第1項或第2項所述之方法，更包括允許該封裝材料自該孔洞經由一通氣孔，而溢流入一溢流容置槽中，使得該孔洞完全地被填滿，且空隙空間減少。
  4. 如申請專利範圍第1項所述之方法，更包括在該基材頂放置一覆蓋層。
  5. 如申請專利範圍第1項所述之方法，其中自該封裝材料傳送層 分配該封裝材料的步驟是經由形成在該封裝間隔件上的一下凹閘道。
  6. 如申請專利範圍第1項所述之方法，更包括施加熱和壓力在該封裝材料上，該封裝材料係放置在該孔洞中。
  7. 如申請專利範圍第6項所述之方法，更包括維持該封裝材料上的該些熱和壓力於一預定時期，以至少部分地硬化該封裝材料。
  8. 如申請專利範圍第7項所述之方法，更包括放置該基材、封裝間隔件和封裝材料於一烘箱中，並允許該封裝材料充分硬化。
  9. 如申請專利範圍第8項所述之方法，進一步使該封裝間隔件和封裝材料傳送層沿著一剪切板(309)破碎。
  10. 如申請專利範圍第8項或第9項所述之方法，更包括自該基材分離該封裝間隔件、自該封裝間隔件分離該覆蓋層，及/或自該封裝間隔件分離該封裝材料傳送層。
  11. 如申請專利範圍第10項所述之方法，其中自該基材分離該封裝間隔件，或自該封裝間隔件分離該覆蓋層及該封裝材料傳送層的步驟藉由提供該封裝間隔件周圍邊緣上的高度起伏而簡化。
  12. 如申請專利範圍第1項所述之方法，其中該封裝間隔件之成型包含貼附該封裝間隔件於該基材上。
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