TWI449137B - 構件或電路用的攜帶體 - Google Patents

構件或電路用的攜帶體 Download PDF

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Publication number
TWI449137B
TWI449137B TW096108105A TW96108105A TWI449137B TW I449137 B TWI449137 B TW I449137B TW 096108105 A TW096108105 A TW 096108105A TW 96108105 A TW96108105 A TW 96108105A TW I449137 B TWI449137 B TW I449137B
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TW
Taiwan
Prior art keywords
carrier
conductive
cooling element
heat
cooling
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TW096108105A
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English (en)
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TW200814267A (en
Inventor
Claus Peter Kluge
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Ceramtec Ag
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Publication of TW200814267A publication Critical patent/TW200814267A/zh
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Publication of TWI449137B publication Critical patent/TWI449137B/zh

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • F21V29/763Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/86Ceramics or glass
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/89Metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
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    • H01L23/367Cooling facilitated by shape of device
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    • H01L23/3737Organic materials with or without a thermoconductive filler
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
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    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
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    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
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    • F21V29/71Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks using a combination of separate elements interconnected by heat-conducting means, e.g. with heat pipes or thermally conductive bars between separate heat-sink elements
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    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
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    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
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    • F21Y2105/10Planar light sources comprising a two-dimensional array of point-like light-generating elements
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    • F21Y2115/10Light-emitting diodes [LED]
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    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
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Description

構件或電路用的攜帶體
本發明關於一種電路或電子構件或電路用的攜帶體,其中該攜帶體不導電或幾乎不導電。
依先前技術,要將導功率電子裝置的模組散熱,故建構出平坦的構造,它們把從一熱源(主要或被動的電氣構件)擴散來的熱經由許多中間層(銲錫、導電膏、粘著劑、合金)導離到一不導電之均勻成形的簡單幾合體(盤、方形基質)。固然個別元件的幾合形狀很簡單,但整個層構造則很複雜,且須連續使用各種不同之易有錯誤的程序,如粘合、壓合、螺合,還有軟銲。此堆疊構造的各界限層造成熱傳遞的障礙,且使該模組的可靠性及/或使用壽命減短(氧化、燒環、老化)或使其功率受限。
具有很小或不足之散熱能力的有機及陶瓷電路載體(carrier)〔攜帶體(carrier-body)〕須用附加措施(如電絕緣的中間層)長期地用形狀嵌合的方式建構到一金屬冷卻體上。當然負荷上升時,熱源須部分地從基板(Platine)移開,且以傳統方式安裝到一金屬冷卻體上並與該電路載體連接成導電。
這種由數個不同材料構成的構造很複雜,如果從長期可靠性看,它是一種折衷辦法。要將功率密度提高,只在很小的範圍中有可能。
導熱性只能有條件地使用,因為它係一種平行平面的構造。
要將導電的冷卻體與一熱源直接結合,同樣地是不可能者。
為了將攜帶體簡化,同時使散熱極端改善,依本發明,該攜帶體與將熱導離或供應的冷卻元件設計成一體。
在一本發明的設計,該攜帶體為一基板,然後將導電路施在該攜帶體上。舉例而言,基板的導電路可經一由導熱程序與攜帶板密切結合,或可將金屬導電路粘合到其上,或可用導電膠。也可使用不同類型之導電路的組合。
該元件宜使熱直接流出到攜帶體或該冷卻元件中。舉例而言,該元件可直接地或間接地經由一層或數層與攜帶體連接。
「構造元件」及「構件」所指者為相同之物。
冷卻元件宜為孔、通道、肋條(Rippen)及/或凹隙,它們可施加一冷卻媒。
加熱媒或冷卻媒可為一種氣體(例如空氣)或液體(例如水或油)。
在一較佳實施例中,該攜帶體由至少一陶瓷元件或一種不同陶瓷的複合物構成。此陶瓷元件可就結晶圖觀點為單晶或多晶或其組合。
舉例而言,陶瓷元件或陶瓷可為氧化鋁、工程氧化鋁、氧化鋅、作不同摻雜的氧化鋯、氧化鋁、氧化矽、氧化矽、玻璃陶瓷、LTCC(低溫共火陶瓷)陶瓷、氧化硼、氧化硼。
特別具技術上的意義的作法,係為導熱能力約24 W/nK的工程用96%氧化鋁,以及約24 W/nK之例如約24 W/nK的純氧化鋁,或約24 W/nK之用氧化鋯補強的氧化鋁,以及約2 W/nK的玻璃陶瓷。
高導熱性係在一些用途如功率電子元件、高功率LED,慣性(遲反應)的高負載安全元件(保險絲)、功率電阻方面有特別的技術意義。低導熱能例係在迅速的高負載電阻有特別意義,以及在一些用途〔其中溫度須確保儘量均勻地分佈在該平面(攜帶體)上〕。此處,舉例而言,可用熱分析或測量構造。
冷卻元件宜隨攜帶體燒結,如此使製造減化,且因此在許多情形也使整個構造之使用壽命改善。
在一特別實施例中,該攜帶體由一複合材料構成,且該複合材料含有不導電或幾不導電的母質材料,它具有導熱的助熔劑(Zuschlagsstoff)。
所用母質材料宜為樹脂、聚合物或矽膠。
該複合材料在較佳實施例係為多材料系統,由聚合物或矽膠構成,並混以陶瓷成份,例如:a)聚合物混以Al2 O3 b)聚合物混以AlN c)矽膠混以Al2 O3 /AlN d)矽膠及聚合物混以ZrO2 /Y2 O3
該攜帶體及/或冷卻元件在一實施例中係呈多層構造。
有意義的方式,係將該構造元件與攜帶體連接成導電及/或導熱的方式。舉例而言,構造元件可為電氣元件或電子元件或主動或被動元件或幾何物體,或其任意組合。
在本發明進一步特點中,至少有一種與攜帶體或冷卻元件連接的可能安裝方式。
利用此安裝式,可將該攜帶體與具有或不具電氣或電子構造元件或電路的其他攜帶體連接。固定作業可利用螺合、鉚合、夾合、粘合、捲曲(Crimpen)、熔接、銲接或其他可能之固定方式達成。
攜帶體可擔任冷卻體的功能,或反之,冷卻體可擔任攜帶體的功能。
這些冷卻元件宜呈相同的尺寸或任意尺寸及/或呈相同或不同的空間朝向與攜帶體連接成一體。
冷卻元件可帶有或具有任意的表面構造化結構,這些表面構造化結構有將表面改變的效果。
最好將一個或數個表面構造化結構或其組合設在一個或數個冷卻元件上,例如在表面的粗糙化結構、溝槽(Riefen)、波狀構造、貫穿孔,或樹板狀或網格狀構造。
該表面構造化結構,舉例而言,宜為攜帶體或冷卻元件的平坦,或不平坦或粗糙的表面,它們係與所要安裝的元件的表面(同樣為不平坦或平坦或粗糙者)連接,特別是用形狀嵌合及/或永久式及/或暫時式或這些方式的組合連接。連接方式舉例而言,可為軟銲或粘合。
在此,在特別的實施例中,該攜帶體或冷卻元件整個面積或部分面積與構造元件呈形狀嵌合。舉例而言,此結合可為永久性或暫時性,或為其組合。舉例而言,構造元件可為電氣式或電子式或主動元件或被動元件或幾何體或為其任意組合。
在一實施例中,該攜帶體或冷卻元件係為平坦者或設有凹隙或設有***部,其中這些部分宜設計成與攜帶體或冷卻元件成一體。
此外,攜帶體宜與大於5 μm的金屬層接合,舉例而言,該金屬層可用DCB方法(直接銅結合,Direct Copper Bonding)或AMB方法(活性金屬焦屑,Active Metall Brazing)施覆。
具有元件的本發明結構,舉例而言在室溫時係在靜止狀態。在操作時,在元件上可由於其作在最短時間中產生局部溫度最大值。這造成元件周圍環境之所謂的熱刺激(Thermoschock)。本發明的構造可熬過這種狀態,而不會有自身損壞的情事。如果這些狀態交替發生--一種所謂的「熱交替」(Thermowechsel),則在傳統的構造(例如具有粘合的導電路者)在較少次的循環週期後,舉例而言,會有導電路從攜帶體剝離的現象。本發明顯示出比傳統構造好得多的熱交替抵抗性。
在本發明的進一步特點中,將相同或不同的構造元件以相同或不同的空間朝向固定在攜帶體上。舉例而言,該朝向可利用不同的銲錫量或凹隙或***部或各種朝向(對準)的可能方式的組合。舉例而言,在LED的場合,可用簡單方式造成其朝向對準,並使其光照對準。
本發明的攜帶體或冷卻元件可有利地當作安裝體使用。
在本發明一實施例中,感測器式的元件與攜帶體連接。舉例而言,感測器式元件可發出信號,由這些信號可以推算一些值如壓力、溫度、重量等。
在本發明一實施例,係由該攜帶體的部分變形或完全變形推算感測器信號。
最好,攜帶體部分地設有金屬區域。這些區域可將攜帶體的上側及下側互相連接成導電方式。
攜帶體宜建構成相對於其他材料設有電化學電位。因此,舉例而言,在對應的耦時,攜帶體或其周圍環境的腐蝕情事可大大減少。
在本發明的設計中,攜帶體當作熱源使用,在其中,所產生的熱經該攜帶體或冷卻元件放到所要調節的介質。
該攜帶體宜由於所供的熱量或冷量(它們傳到攜帶體或經由冷卻元件供應)而具有標的之溫度分佈。因此,舉例而言,周圍環境的溫度差可依標的抵消。
在攜帶體上宜施一些物料,它們可使結合程序變得有可能。舉例而言,此處可使用一種金屬合金構造W-Ni-Au(鎢-鎳-金),俾使金絲能結合。此物料可由一種或數種材料構成,這些材料係混合地或者由至少一層構成地施到攜帶體。舉例而言,這些物料可為材料或數種材料構成的層(如銅、鎳、金)或由至少二種不同材料構成之混合物(例如金屬及/或助熔劑),以及由相同或不同材料或助熔劑構成的層。
在本發明的進一步特點中,一種或數種發光材料可和一個或數個發光元件或其組合與載體連接。舉例而言,它們可為一種半導體或一種具半導體的殼體,例如LED用者以供照明之用。
最好,有金屬或金屬層,該金屬係與攜帶體密切接合或利用機械性形狀嵌合用整個面積或部分面積連接,它們的熱傳導性係與攜帶體相同或不同。舉例而言,金屬或金屬層可為鎢、銀、金、銅、鉑、鈀、鎳,它們可呈純的品質,或工業級的品質或為至少二種不同金屬構成的合金。舉例而言,金屬或金屬層也可混以提供附著性的或其他助熔劑,如玻璃或具聚合物性的材料。舉例而言,金屬或金屬層亦可為反應銲錫、軟或硬的銲藥。
特別顯著者,係在多點式熱源的情形,熱量須很快地分佈在攜帶體整個表面,因此一個導熱性較低的攜帶體可將產生之熱經由金屬分佈到整個表面。因此熱量可散到冷卻元件上。如此一具有較小導熱性的攜帶體可將產生熱經由金屬分佈到其整個面積。由於攜帶體係電絕緣者,故該金屬同時也滿足導電性及導熱性的功能。
在本發明一實施例中,該攜帶體上的金屬或金屬層可具不同功能,因此它可具有導電性及/或導熱性的功能或使表面顏色改變的功能,或使熱分佈,或當作對一第三種金屬的附著劑,例如銲錫、粘著膠,以及相同或不同金屬區域的功能的任何組合。
此優點在於金屬區域的導電能力可作配合。因此舉例而言,它們不一定要有相同高度及厚度。
因此金屬宜整面或部分面積地以相同或不同之厚度(高度)與攜帶體以相同或不同的金屬區域中的攜帶體接合。
在另一本發明的實施例中,相同或不同金屬呈單層或多層方式以相同或不同的厚度(高度)整個面積或部分面積地與攜帶體連接。
在另一實施例中,攜帶體整個面積或一部分面積帶有所用材料的本身著色,或該部分載體的部分區域交替地被自身著色所上色,顏色賦予可由不同種類及這些種類的組合而形成。
攜帶體(以一種工程氧化鋁為基礎)舉例而言,可在其製造程序時,設以賦與顏色的添加劑,因此,熱處理的結果,材料可整個著色,而且這種顏色不能用機械方式分開。
攜帶體(例如以工程氧化鋯為基礎者),在其製造程序後,例如在表面設以賦與顏色的添加劑,因此,熱處理的結果,使該大體材料表面完全著色。各依造成之著色的侵入深度而定,該大體材料內部也可保持其自身顏色,著色的梯度可接受各種大不相同的特性。
該攜帶體(例如以工程氧化鋁為基礎者)可設以賦與顏色的層,結果該載體的大體材料不著色,且顏色的變化只由一個或數個可用機械方式分離的層產生。舉例而言,賦與顏色的層可為漆、透明漆(Lasur,英:scumble)、粘著膜、金屬等。
在另一實施例中,該攜帶體經由適當接合材料與至少另一個幾何性質相同或不同的攜帶體連接成一種三度空間的陣列(Array)。
接合材料可為單層或多層性質者。接合材料可為同類或不同類,或與單層或多層構造配合使用。舉例而言,接合材料例子有粘著劑、金屬鍍層、金屬〔例如用一些方法如DCB(直接銅結合)或AMB(主動金屬覆銅)〕與載體連接〕。舉例而言,也可用銲錫、反應鍚料、兩面膠等。
在一實施例中,該攜帶體與一種或數種發光的材料或一種或數種發光成分以及其組合接合,同時設有標準化或非標準化的連接器,也可將相同或不同之電連接器組合使用。最好使用一種由該電連接器測出的機械性連接方式接到攜帶體。舉例而言,燈泡接頭(Lampensockel)E27.E14、GU系統、G系列、U系統、R系列、插接頭、插旋式(Bayonett)接頭、夾接合器、螺旋接合、插接器等。機械式的連接或機械式連接方式的組合的例子可為粘合、軟銲、夾封(Quetschen,英:pinch-sealing)、鉚合、夾合等。
在另一實施例中,至少一攜帶體經由適當的接合材料與至少另一幾何體連接成一種三度空間的構造,至少一個或數個相同的或不同的攜帶體可用相同或不同的朝向設在任意位置。例如可用接合材料,如粘著劑、金屬鍍層、金屬、例如利用DCB(直接銅結合)或AMB(活性金屬焦屑)與載體接合的金屬、銲錫、反應性銲料、雙面膠等。幾何體舉例而言可為板,板上在不同區域至少有一個或數個相同或不同的攜帶體。
舉例而言,攜帶體可為一塑膠殼體的構件。
在又一實施例中,至少一個及/或數個不同或相同的攜帶體可用任意的朝向或相方向朝向埋入一母質材料中。舉例而言,埋入作業可用射出成形或壓鑄達成。埋入物料本身可任意地及對應於標的功能而選用,特宜用塑膠。
依本發明,在一種攜帶體,可藉由變更尺寸或著色、或鍍金屬區域的大小及分佈、或冷卻元件的幾何形狀或設計、或冷卻元件的數目,或這些方式的組合,而將熱運送作用作改變。舉例而言,如果將冷卻元件的設計改變,則可在恆定的熱加入的形下藉由放出熱能或吸收熱能將變動狀態或平衡狀態中的絕對溫定改變。這點舉例而言,也可藉由將冷卻元件依標的加入或拿掉或放大或縮小而達成。舉例而言,這種改變也可藉改變顏色而達成。因此一種黑色體的輻射特性和白色體不同。
在一較佳實施例中,攜帶體的表面積對冷卻元件的表面積成1:X的比例,其中X1.1。特別具工程意義者為X1.8,因為如此,可運送的熱能較大。
在攜帶體表面宜施一燒結之金屬鍍層區域。
在本發明的實施例中,該鍍金屬區域由鎢構成,且用化學方式鍍鎳。該鍍金屬區域在一實施例中設計成圓形。
在特別的實施例,攜帶體設有導電路,藉之將高可達仟伏範圍的電壓送入,而不會有電流經攜帶體的大體材料流出的情事,工程上特別有利的作法,係為80伏~600伏電壓範圍,且電壓遠大於2千伏特。
在較佳實施例中,該攜帶體對電場、或磁場或電磁場或這些場的組合並沒有遮蔽或只有很小的遮蔽作用,因此這些場也可貫穿攜帶。
在一實施例中,攜帶體依標的全面積或部分面積設有材料,它功能係可在一些區域(這些區域中對電場、磁場或電磁場或其組合的遮蔽作用與攜帶體的材料的遮蔽作用不同。
最好藉由將適當的材料(例如金屬)依標的施覆到攜帶體上而形成一些區域,它們由於其幾何性質,因此可藉由電感性或電容性效果或這些效果的組合,而將電信號、磁信號或電磁信號接收或發送。在最廣義的定義,「信號」一詞係用於指能量的無線傳輸。舉例而言,該能量也可藉調變將附加的資訊一齊傳送。
在一本發明的設計中,攜帶體設有一種智慧型自動辨的功能。舉例而言,自動辨識可為一種詞藻(Schriftzug)或標記或具有相關資訊的磁條或一RFID單元或其組合。
在一實施例中,該攜帶體由工程氧化鋁構成,其起碼最少的氧化鋁含量為89%,舉例而言,鍍金屬區域適用於能將構件軟銲上去,並因而造成一種密切結合。舉例而言,與一習用的LED的結合可利用銲接部造成。該銲機部至少有將LED與攜帶體作機械式接合的功能。此外,鍍金屬區域可使LED作導電接觸及導熱接觸。
茲以一種具有銲接上去的點熱源(例如LED)之具有印刷及燒結的鍍金屬區域的攜帶體的構造為例,該工程上所需之導電路橫截面可選設成遠比所需者大得多,因為可經由鍍金屬區域及導電路橫截面在作導電的同時,也能將熱傳到攜帶體的較大表面並因而分佈到冷卻元件上。比起一種電性相當而且夠小的鍍金屬區域及導電路橫截面來,經由較大的鍍金屬區域及導電路橫截面可將較大的熱量在較短時間分佈在攜帶體表面並由該處分佈到冷卻元件。
攜帶體或冷卻元件(以下亦稱「體」)宜由至少一種陶瓷材料或不同陶瓷的複合物構成。舉例而言,可列舉工程氧化鋁80~99.9%、氧化鋁、氧化鈹、氧化鋯、安定化之氧化鋯、氧化鋁、用鋯補強之氧化鋁、玻璃陶瓷、或至少二種不同陶瓷或添加物混合形成之陶瓷。結晶陶瓷舉例而言,可為藍寶石。
該體也可由一複合材料構成,可使用母質材料,例如:樹脂、聚合物或具助熔劑的矽烷酮,助熔劑使母質材料的導熱能力改變,多材料系統宜為具Al2 O3 的聚合物、具AIN的聚合物、具Al2 O3 /AIN的矽烷酮。
該體可為剛性或可撓性或剛性可撓性的組合。
該體可為一種複合物:金屬-陶瓷,或該體與金屬的複合物。
該體可構建成多層,具有內部的導電路及電構件,如電阻、線圈、電容器等,其中在層與層之間也可為導電的區域。
該體也可當作導電冷卻體使用,特別是當周圍環境有腐蝕作用時,尤其是如此。
該體同時也可為安裝殼體,使用本發明的攜帶體有以下優點:.減少元件樣性(種類);.擴充功能多樣性;.對熱過載自身防護;.長期可靠性;.避免由於使用大不相同的材料造成TCE誤配(missmatch);.由於散熱改善,使功率提高;.將損失熱直接散掉的困難克服;.基本原理上可轉用到許多用途;.自身系統內在的熱均衡作用;.繞道以將熱源裝在一分別之殼體(它又可裝到該體上)的作法可排除。
熱源可為電氣構件或電子構件,例如加熱元件、珀耳帖元件(Peltierelement)、電阻、主動及被動半導體。
熱可視為功能而產生,或是實施功能時發生的副產物。
熱源也可在操作時,受到本身產生的熱而使其功能性改變。
熱源可直接與該體(例於與一銲接部)連接。
〔IGBT〕
模組係以越來越高的功率/每單位面積敷設且這些模組的長期功能性只能藉安裝冷卻體而確保。
此處選用本發明的攜帶體以散熱。
〔LED(發光二極體)〕
迄今,先前技術無法或只能有限地達到較大之所需的光密度。其原因在於先前技術的熱管理(Management)很差,隨著亮度增加,廢熱也增加。廢熱明顯地影響使用壽命及顏色恆定,使用雷射二極體情形亦如此。
依本發明,該半導體可直接裝到基板上,或先行封裝到殼體,然後呈構件方式放到基板上。設在基板上的電路再依本發明利用冷卻元件冷卻,或該半導體直接設以一附加之冷卻體。舉例而言,半導體也可為太陽電池,因為其功率釋出隨溫度升高而下降。在此情形,由於半導體本身的操作半不會有須散掉的廢熱產生,而係在此處,半導體會受陽光的紅外線成份加熱。
〔控制〕
依先前技術,舉例而言,在汽車中,熱源與電路係分開且連接成導電。此處,也使用具有可導熱之冷卻體的構造。
〔冷卻體的腐蝕〕
在特定使用條件,在導電的冷卻體會發生表面腐蝕。受化學變化產生之表面化合物改變了接到冷媒的傳輸,且可使表面積〔例如由於孔銑切(Lochfraβ,英:pitting)〕而改變,具有整合之冷卻元件的陶瓷攜帶體可解決此問題。
〔陶瓷加熱元件〕 〔將冷卻體本身或其直接或間接的周圍作熱穩定化的應用〕 〔珀耳帖(Peltier)的應用〕
珀耳帖元件具有一冷側及一熱側,各依應用而定,該構造往往配合一分別的冷卻體。此處該珀耳帖元件直接設到該電絕緣的冷卻體上。
〔內部感測器電路(Sensorik intern)/在自身系統由於直接回偶在表面的情形〕
冷卻體本身可含有設入的或裝到一表面上的感測器電路。藉由直接耦合到該系統,可使熱源有自身調節的保護功能。
〔冷卻體的安裝〕
安裝點、墊片(Pad)、空腔(Kavitt)、安裝銷、主動及被動的冷卻--孔--通風器--在非空氣的冷媒中的肋條(Rippen)
當安裝構件及冷卻體時,先前技術往往需要一第三元件,一種所謂的導熱膜,它同時須為電絕緣者。為了要能達成所要散熱效果,故冷卻體與構件須有平坦及平行平面的表面。當安裝這種構造時,往往選用螺合。如果此處,在安裝或在操作時造成構造中的延遲,則熱接觸作用部分地失去,因此構造的功能性及使用壽命不成問題。
依本發明,茲首度能在電絕緣冷卻體上作銲接,其中上述在銲接過程的熱耦合的缺點不會發生。
〔多層夾心式構造〕
一種簡單的冷卻體的機械式接合,用於將單元本身安裝,並與其他冷卻體及/或結合在冷卻上的功能作連接。
〔自身冷卻的基板〕
在先前技術係將熱量管理不足的基板設以一導電的冷卻體。在此,熱結合有限,因為熱結合須為長時穩定者。舉例而言,限制因素係為該電絕緣介質之時間性及幾何性的改變。
圖1~圖20顯示一攜帶體,由陶瓷製成,具有由陶瓷構成的冷卻元件(7),設計成肋條形式。在攜帶體(1)上有另一獨立的攜帶體(2)。攜帶體(1)(2)各帶有含金屬的(亦即導電的)層(9)。攜帶體(2)在攜帶體(1)上的接合部可用軟銲接合部(14)表示。如此,攜帶體(2)的放熱作用或冷卻作用可經攜帶體(1)到冷卻元件(7)。在攜帶體(2)上可設一LED(60),其中係將LED(60)的基板(5)經由一軟銲接合部(14)與攜帶體(2)的含金屬的層(9)連接。冷卻元件(7)藉燒結而與攜帶體(1)接合成一體。冷卻元件(7)本身也可作攜帶體的功能,將二個以上攜帶體組合也很有利。
圖2顯示一由陶瓷構成的攜帶體(1),它具有陶瓷構成的冷卻元件(7),設計成肋條形式。此攜帶體(1)上有一晶片(6a),它在位置上係為一熱源。此晶片(6a)經由線路(8)與導電層(9)連接。晶片(6a)可直接與攜帶體(1)連接,或者,舉例而言,經由一可軟銲的金屬層(10)在載體上與軟銲接合部(14)連接,圖號(6b)表示另一電氣或電子構件,它一如晶片(6a)呈一熱源形式。構件(6b)設在冷卻元件(7)上在一導電層(9)上。因此,冷卻元件(7)在此處也擔任一攜帶體的功能。冷卻元件(7)藉燒結而與攜帶體(1)連接成一體。該另外的冷卻元件(7)也可作攜帶體的功能。
圖3的例子顯示可將攜帶體(1)及/或冷卻元件(7)經由一種可能之安裝方式〔例如螺合部(11)〕與其他元件〔例如另一攜帶體或一更階的構件〕、經由一粘著料(12)或類似之可能的固定方式而連接。因此,螺合部(1)係一種可能之安裝方式。除此之外,攜帶體(1)與圖2幾乎相同。
圖4顯示將相同或不同形式的冷卻元件(7)設在攜帶體(1)上的可能方式。冷卻元件(7)就其對攜帶體(1)表面的朝向而言,在如有空間方向可為任意的,同類的、或其組合。此處,一個具有軟銲層(14)的半導體(6d)經由一含金屬的導電層(9)與攜帶體(1)連接。此外,半導體(6d)用一金屬絲(3)與含金屬的層(9)連接。
圖5a~5d顯示表面變更的可能方式,圖5a顯示將空腔與孔(4)做入冷卻元件(7)的可能方式。
圖5b顯示藉著將邊緣的溝槽(Riefen)(13)及/或同時使冷卻元件(7)的走勢及厚而將表面變更的方式。
圖5c顯示藉著將波狀溝槽加入而使表面變更的方式。
圖5d顯示藉著在冷卻元件(7)中作粗枝狀的分枝(16)而使表面改變的方式。
圖6顯示一攜帶體(1)之不平坦形狀的粗糙表面,它與一構件(6b)連接。構件(6b)與攜帶體(1)設有一可軟銲的鍍金屬層(51)。完全的形狀接合作用係利用一軟銲接合部(14)達成。
圖7顯示一攜帶體(1),在其上有一構件(6b)經由一種部分形狀接合方式的接合部(52)設置。在該形狀接合方式的接合部(52)之間設有不具形狀接合的區域(53)。
圖8顯示攜帶體(1)中一凹隙(50),圖9顯示在一攜帶體(1)上的一***部。
圖10顯示具有冷卻元件(7)的一攜帶體(1),在攜帶體(1)上有構件(6b)經由軟銲接合部(14)以不同之空間排列方式設置。舉例而言,構件(6b)可為LED,它們要向不同方向發出光線。
圖11顯示一攜帶體(1),它具有連接成一體的冷卻元件(7)。攜帶體(1)與冷卻元件(7)由一陶瓷材料構成,且二者利用燒結程序互相接合成一體,因此它們係單一構件。一冷卻元件(7a)的橫截呈梯階形,另一冷卻元件(7b)的橫截面呈栓形,又一冷卻元件(7c)則設計成方形。在攜帶體(1)上側(20)設有導電路(17),下側(21)表示攜帶體(1)之背向上側(20)的那一側。在攜帶體(1)的上側(20)上,除了導電路(17)(此處只示意圖示)還用DCB方法整面施一金屬--銅(18)的導熱性宜大約等於攜帶體(1)及/或冷卻體(1)的導熱性。導熱性一詞係指瓦特/mK。當然金屬(19)的導熱性也可和攜帶體(1)及/或冷卻元件(7)的導熱性不同。
圖12顯示一個具有冷卻元件(7)的攜帶體(1),如圖11所示。在上側(20)上在一金屬(19)上設一熱源(22)。熱源(22)經由導電路(17)控制,導電路(17)具有導電功能,而金屬(19)具有熱傳播及導電功能。
圖13顯示一個具冷卻元件(7)的攜帶體(7),一如圖11及圖12所示者。在攜帶體(1)的上側(20)設有金屬(19),它們的厚度(23)(亦即高度)不同。金屬(19a)的厚度梯度係使厚度連續地向另一邊一直增加。金屬(19)可用整個面積或部分面積與攜帶體(1)接合。
圖14顯示一個具冷卻元件(7)的攜帶體(1),如圖11~圖13所示者。在上側(20)有金屬(19)呈多層設置,此處可施覆數層單一種金屬,也可施覆數層不同的金屬,個別的層也可具有一種構造(24)。
圖15a顯示一種具冷卻元件(7)的攜帶體(1),如圖11~圖13所示。攜帶體可整個著色〔見區域(48)〕或也可只有攜帶體(1)的個別區域著色。圖15b顯示沿一斷裂緣x之攜帶體(1)或冷卻元件(7)的斷面。此處可看到著色係遍及其內部。
圖15c顯示呈梯度形式的著色。在該具冷卻元件(7)的攜帶體製造後,將一賦與顏色的添加劑施上,該添加劑在該大體材料作熱處理後著上顏色。
圖15d顯示冷卻元件(7)的一斷面,其中該大體材料不著色。為此施一表面覆層,例如一種漆。圖號x在所有圖中表示斷裂緣。
圖16a及16b中,一攜帶體(1)與另一攜帶體(2)連接,其接合可為不同方式且依需求而定。圖號(47)表示接合材料。在圖16a、16b中,冷卻元件(7)為不同種的肋。
圖17顯示一種具冷卻元件(7)的攜帶體(1),其中,利用接合材料(47)將一種E27接頭座(46)設到冷卻元件(7)上。此E27接頭座(46)用於容納一照明手段,例如一白熾燈泡,此E27接頭座在此處也普遍用於所有電連接器、插頭或插座。在上側(20)設有一LED(6c)。
圖18顯示一本發明的實施例,其中一攜帶體(1)與另一攜帶體(2)接合成一三度空間構造(陣列)。(47)再表示該接合材料。在該另一攜帶體(2)上設有再一攜帶體(3)。攜帶體(2)設計成三度空間幾何體形式。
圖19a、19b、19c顯示一攜帶體(1),它與冷卻元件(7)連接成一體。攜帶體(1)的整個表面設計成燒結之鍍金屬區域(41)形式。鍍金屬區域(41)由鎢構成,且用化學方式鍍鎳。圖19a顯示具冷卻元件(7)的攜帶體(1)的立體圖。圖19b顯示由下看冷卻元件(7)的視圖。圖19c顯示沿圖19b的線A-A的橫截面。
具冷卻元件(7)的攜帶體(1)的長度L=50 mm,寬度B=25 mm。冷卻元件(7)的高度H1為10 mm,而整個攜帶體(1)連冷卻體(7)的高度H2為13 mm。個別冷卻元件的厚度D為2 mm,冷卻元件(7)互相的間隔A為2 mm。個別的冷卻元件(7)的末端略修圓。
在圖20a、20b、20c、20d中顯示一種具冷卻元件(7)的攜帶體(1),它就其尺寸而言,係與圖19的攜帶體(1)相同。但此處,攜帶體(1)並非整個表面都計成燒結之鍍金屬區域(41)(由鎢構成且用化學方式鍍鎳)。鎢層的厚度至少6 μm,且鎳層厚度至少有2 μm。個別之鍍金屬區域(41)的直徑為5 mm。此攜帶體(1),舉例而言,用於容納LED。
(1)(2)...攜帶體
(3)...金屬絲
(4)...軟銲接部
(5)...基板
(6a)...晶片
(6b)...電氣/電子構件
(6d)...半導體
(7)...冷卻元件
(7a)(7b)...冷卻元件
(8)...線路
(9)...導電層
(10)...金屬層
(11)...螺合部
(12)...粘著劑
(13)...溝槽
(14)...軟銲接合部
(16)...分枝
(17)...導電路
(18)...銅
(19)(19a)...金屬
(20)...上側
(21)...下側
(22)...熱源
(23)...厚度(高度)
(41)...鍍金屬區域
(46)...E27接頭
(47)...接合材料
(48)...區域
(51)...鍍金屬層
(53)...區域
(60)...LED
圖1~20係本發明攜帶體的各種實施例。
(1)...攜帶體
(6a)...晶片
(6b)...電氣/電子構件
(7)...冷卻元件
(8)...線路
(9)...導電層
(10)...金屬層
(14)...軟銲接合部

Claims (14)

  1. 一種電構件(6a)(6b)(6c)(6d)或電路用的攜帶體(1)(2),其中該攜帶體(1)(2)不導電或幾乎不導電,該攜帶體(1)(2)設有一體之將熱導離或供熱的冷卻元件(7),該攜帶體(1)(2)為一印刷電路基板,該攜帶體(1)(2)及/或冷卻元件由至少一種陶瓷成份或不同陶瓷的複合材料構成,且該複合材料含有不導電或幾乎不導電的母質材料,具有導熱的助熔劑,且有燒結之鍍金屬區域施覆在該攜帶體表面。
  2. 如申請專利範圍第1項之攜帶體,其中:至少有一種可能之安裝手段(11)與該攜帶體(1)(2)或冷卻元件(7)連接。
  3. 如申請專利範圍第1或第2項之攜帶體,其中:該冷卻元件(7)帶有或具有任意的表面構造,這些構造係造成表面改變的效果。
  4. 如申請專利範圍第1項之攜帶體,其中:該攜帶體連接到厚度大於5微米的一金屬層。
  5. 如申請專利範圍第1項之攜帶體,其中:該攜帶體用於當作熱源,其中產生之熱供到一介質,其溫度經由該攜帶體或該冷却元件調節。
  6. 如申請專利範圍第1項之攜帶體,其中:有一種或數種發光的物料或一個或數個發光的元件或其組合與該攜帶體連接。
  7. 如申請專利範圍第1項之攜帶體,其中:該攜帶體(1)(2)經由適當之接合材料與至少另一幾何性 質相同或不同的攜帶體(1)(2)接合成一種三度空間的陣列。
  8. 如申請專利範圍第1項之攜帶體,其中:該攜帶體(1)(2)與一種或數種發光的物料或一個或數個發光的元件或其組合連接,同時設有標準規格的或非標準規格的電連接器。
  9. 如申請專利範圍第8項之攜帶體,其中:該電連接器為燈泡接頭座。
  10. 如申請專利範圍第1項之攜帶體,其中:至少一個及或數個不同或相同的攜帶體(1)(2)呈任意的或同向的朝向埋入一母質材料中。
  11. 如申請專利範圍第1項之攜帶體,其中:在一種攜帶體(1)(2),藉著改變大小、顏色或鍍金屬區域或幾何形狀或改變冷卻元件(7)或改變冷卻元件(7)的數目或利用以上手段的組合,將熱傳送性質改變。
  12. 如申請專利範圍第1項之攜帶體,其中:該攜帶體(1)(2)對於電場、磁場或電磁場或其組合場沒有或只有很小的遮蔽作用,因此這些場也可穿過該攜帶體(1)(2)。
  13. 一種電構件或電子構件或電路用的攜帶體,其係不導電或幾乎不導電,且該攜帶體設有散熱或供熱冷却元件,其中該攜帶體為一印刷電路基板,攜帶體和冷却元件具有一陶瓷材料或複合材料,該複合材料含有不導電或幾乎不導電的母質材料,其具導熱之助熔劑,且燒結之鍍金屬區域施在攜帶體表面,該燒結之鍍金屬表面包含鎢且用 化學方式鍍鎳。
  14. 一種電構件或電子構件或電路用的攜帶體,其係不導電或幾乎不導電,該攜帶體設有一體的散熱或供熱的冷却元件,其中攜帶體為印刷電路基板;該攜帶體和冷却元件包含一陶瓷或複合材料,複合材料包含不導電或幾乎不導電的母質材料,該母質材料設有導熱助熔劑,且有多數圓形燒結,鍍金屬區域施在攜帶體表面,該燒結之鍍金屬區域由鎢構成,且用化學方式鍍鎳。
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