TWI245436B - Package for housing light-emitting element, light-emitting apparatus and illumination apparatus - Google Patents

Package for housing light-emitting element, light-emitting apparatus and illumination apparatus Download PDF

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Publication number
TWI245436B
TWI245436B TW093133106A TW93133106A TWI245436B TW I245436 B TWI245436 B TW I245436B TW 093133106 A TW093133106 A TW 093133106A TW 93133106 A TW93133106 A TW 93133106A TW I245436 B TWI245436 B TW I245436B
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TW
Taiwan
Prior art keywords
light
emitting element
emitting device
emitting
mounting portion
Prior art date
Application number
TW093133106A
Other languages
Chinese (zh)
Other versions
TW200527716A (en
Inventor
Mitsugu Uraya
Daisuke Sakumoto
Akira Miyake
Fumiaki Sekine
Mitsuo Yanagisawa
Original Assignee
Kyocera Corp
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Filing date
Publication date
Priority claimed from JP2004071434A external-priority patent/JP2005210043A/en
Priority claimed from JP2004071433A external-priority patent/JP2005183901A/en
Priority claimed from JP2004071429A external-priority patent/JP2005210042A/en
Priority claimed from JP2004071427A external-priority patent/JP4091926B2/en
Priority claimed from JP2004071430A external-priority patent/JP3921474B2/en
Priority claimed from JP2004275058A external-priority patent/JP2005294796A/en
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of TW200527716A publication Critical patent/TW200527716A/en
Application granted granted Critical
Publication of TWI245436B publication Critical patent/TWI245436B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers

Abstract

A light-emitting apparatus provides a ceramic-made base body, a frame body, a light-emitting element, a conductor layer and a light-transmitting member. The base body has on its upper surface a mounting portion for the light-emitting element. The frame body is joined to the upper surface of the base body so as to surround the mounting portion, with its inner peripheral surface shaped into a reflection surface. The wiring conductor has its one end formed on the upper surface of the base body and electrically connected to the light-emitting element, and has another end led to a side or lower surface of the base body. The light-transmitting member is disposed inside the frame body so as to cover the light-emitting element, which contains fluorescent substances for performing wavelength conversion. The base body is so designed that ceramic crystal grains range in average particle diameter from 1 to 5 mum.

Description

1245436 九、發明說明： 【發明所屬之技術領域】 · 本發明關於用來收納發光元件的發光元件收納用封裝及 产 發光裝置以及照明裝置，還關於以螢光體將從發光元件發 光的光進行波長變換並輻射到外部的發光元件收納用封裝 及發光裝置以及照明裝置。 【先前技術】 在圖31中示出用紅色、綠色、藍色及黃色等發出螢光的 多個螢光體（圖中未示出）將從發光二極管（LED)等發光元 _ 件14發光的近紫外光和藍色光等光進行波長變換，進而進 行白色發光的第1先前技術的發光裝置。在圖3丨中，發光裝 置11主要由：絕緣體構成的基體12、框狀的框體13、透光 性構件15和發光元件14構成。基體12在上面的中央部上具 有用來安放發光元件14的安放部12a。在基體12上形成安放 部12a及從其外周將發光裝置的内外電導通的管腳或由金 屬化配線等構成的配線導體（圖中未示出）。框體丨3黏接固定 在基體12的上面上，形成有上側開口比下側開口還大的貫 籲 通孔13a，並且内周面成爲將從發光元件14發光的光反射的 反射面13b。透光性構件15被填充在框體13的内側，並含有 由從發光元件14發光的光所激勵而進行波長變換的螢光 體。發光元件14被安放固定在安放部12a上。 在圖32中示出用來收納發光二極體（LED)等發光元件25 广 的第二先前技術的發光元件收納用封裝。在圖3 2中，發光 元件收納用封裝主要由絕緣體構成的基體21、框狀的反射 95381.doc 1245436 構件22構成。基體21在上面的中央部上具有用來安放發光 元件25的安放部21a。在基體21上，形成有從安放部21a到 基體2 1的外面而形成的將發光元件收納用封裝的内外電導 通連接的管腳或由金屬化配線等構成的導體層27。反射構 件22黏接固定在基體2 1上面上，且在形成有上側開口比下 側開口還大的貫通孔22a，並且將内周面作爲反射發光元件 25發光的光的反射面22b。 在該發光元件收納用封裝的安放部21&上安放發光元件 25，並且將發光元件25的電極26電連接在導體層27上，以 在反射構件22的内側覆蓋發光元件25的方式，通過填充含 有激勵發光元件25發光的光並進行波長變換的螢光體的透 明構件23而成爲發光裝置20。 4發光裝置2 0可以用透明構件2 3所含有的紅色、綠色、 藍色、黃色等多個螢光體對從發光元件25發光的近紫外光 和藍色光進行波長變換，以得到白色光。 在圖33中示出用紅色、綠色、藍色、黃色等多個螢光體 34將從發光二極管（LED)等發光元件35發光的近紫外光和 藍色光等光進行波長變換，進而進行白色發光的第3先前技 術的發光裝置30。在圖33中，發光裝置30主要由絕緣體構 成的基體3 1、框狀的反射構件3 2、透明樹脂3 3和發光元件 35構成。基體31在上面的中央部上具有用來安放發光元件 35的安放部31a。基體31上形成安放部31a及從其外周將發 光裝置的内外電導通連接的管腳或由金屬化配線等構成的 配線導體（圖中未示出）。反射構件32黏接固定在基體31的上 95381.doc 1245436 面上，在形成有上側開口比下側開口還大的貫通孔32a，並 且内周面成爲將發光元件3 5發光的光反射的反射面32b。透 明樹脂3 3被填充在反射構件3 2的内部，且含有激勵發光元 件3 5發光的光並進行波長變換的螢光體34。發光元件35被 安放固定在安放部31a上。 基體12、21、31由氧化鋁材質燒結體（氧化鋁陶瓷）、氮 化銘材質燒結體、莫來石材質燒結體或玻璃陶瓷等陶竟或 者環氧樹脂等樹脂構成。在基體12、2 1、3 1由陶竟構成的 情況下，以高溫在其上面燒結由鎢（w)或鉬（Μ〇)·錳（Mn)等 構成的金屬膏，以形成配線導體。又，在由樹脂構成基體 12、21、31的情況下，鑄模成型由銅（Cu)或鐵（Fe)_鎳（Ni) 合金等構成的管腳，並設置固定在基體12、21、31的内部。 此外，框體13以及反射構件22、32形成爲在形成上侧開 口比下側開口還大的貫通孔13a、22a、32a，並且在内周面 設置反射光的反射面13b、22b、32b的框狀。具體而言，由 鋁（A1)或Fe-Ni_-(Co)合金等金屬、氧化鋁陶瓷等陶瓷或者 環氧樹脂等樹脂構成，利用切削加工、鑄模成型或擠壓成 型等成型技術而形成。 又，框體13及反射構件22、32的反射面13b、2孔、3汕 係通過將貫通孔13a、22a、32&的内周面研磨並平坦化，或 者通過由蒸鍍法或電鍍法將鋁等金屬被覆在貫通孔i3a、 22a、32a的内周面上，並作爲能將來之發光元件14、以、 35的光有效反射的構件而形成的。而且，框體u及反射構 件22、32係利用焊錫或銀（Ag)焊料等焊料材料或者樹脂粘 95381.doc 1245436 接材料等接合材料而接合在基體12、2 1、3 1上，以便以框 體13及反射構件22、32的内周面包圍安放部12a、21a、31a。 在第一及第三先前技術中，經由接合線或金屬球等電連 接機構（圖中未示出）及電極36，電連接配置於安放部12a、 3 1 a外周的配線導體和發光元件丨4、3 5，然後通過用分配器 等注入機將含有螢光體的環氧樹脂和矽樹脂等透光性構件 15填充在框體13及反射構件32的内側，以便覆蓋發光元件 14、35，並用烘烤爐使其熱固化，從而可以做成可取出利 用螢光體波長變換從發光元件14、35發光的光並具有所希 望的波長光譜的光的發光裝置U、3〇。 在第二先前技術中，發光元件25經由設於發光元件25的 下面的電極26而和配置在安放部21a上的導體層27電連 接。發光元件25的電極和導體層27由焊錫或銀膏（含有銀粒 子的樹脂）等導電性粘接材料28進行接合。 透明構件23由含有螢光體的環氧樹脂和矽樹脂等透明樹 脂構成，並通過以分配器等注入機填充到反射構件22的内 部中，以便覆蓋發光元件25，以棋烤爐使其熱固化而形成。 由此，可以取出利用螢光體將來自發光元件25的光進行長 波長變換而具有所希望的波長光譜的光。 該發光裝置30，由從 由從外部電路（圖中未示出）供給的電流1245436 IX. Description of the invention: [Technical field to which the invention belongs] · The present invention relates to a light-emitting element storage package for accommodating light-emitting elements, a light-emitting device, and a lighting device. A light-emitting element housing package, a light-emitting device, and a lighting device that are wavelength-converted and radiated to the outside. [Prior Art] FIG. 31 shows that a plurality of phosphors (not shown in the figure) that emit fluorescence with red, green, blue, yellow, and the like will emit light from a light-emitting diode (LED) and the like 14 The first prior art light-emitting device that performs wavelength conversion of light such as near-ultraviolet light and blue light to perform white light emission. In FIG. 3, the light-emitting device 11 is mainly composed of a base body 12 made of an insulator, a frame-shaped frame body 13, a light-transmitting member 15, and a light-emitting element 14. The base body 12 has a mounting portion 12a for mounting the light-emitting element 14 on the upper center portion. On the base body 12, a mounting portion 12a and a pin for electrically conducting the inside and outside of the light-emitting device from the outer periphery thereof or a wiring conductor (not shown) made of metallized wiring or the like are formed. The frame body 3 is adhered and fixed to the upper surface of the base body 12, and a through hole 13a having an upper opening larger than the lower opening is formed, and the inner peripheral surface is a reflecting surface 13b that reflects light emitted from the light emitting element 14. The light-transmitting member 15 is filled inside the frame 13 and contains a phosphor which is excited by light emitted from the light-emitting element 14 and performs wavelength conversion. The light-emitting element 14 is fixed on the mounting portion 12a. Fig. 32 shows a light emitting element storage package of the second prior art for accommodating a wide range of light emitting elements such as light emitting diodes (LEDs). In FIG. 32, the light-emitting element housing package is mainly composed of a base 21 made of an insulator and a frame-shaped reflection 95381.doc 1245436 member 22. The base body 21 has a mounting portion 21a for mounting the light emitting element 25 on the upper center portion. The base 21 is formed with pins that electrically connect the inside and outside of the light-emitting element housing package, and a conductor layer 27 made of metalized wiring or the like, formed from the mounting portion 21a to the outside of the base 21. The reflection member 22 is adhered and fixed on the upper surface of the base 21, and a through hole 22a having an opening larger than that on the lower side is formed, and an inner peripheral surface is used as a reflection surface 22b for reflecting light emitted from the light emitting element 25. A light-emitting element 25 is placed on the mounting portion 21 & of the light-emitting element housing package, and the electrode 26 of the light-emitting element 25 is electrically connected to the conductor layer 27 so as to cover the light-emitting element 25 on the inside of the reflection member 22 by filling. The transparent member 23 containing a phosphor that excites light emitted by the light emitting element 25 and performs wavelength conversion becomes the light emitting device 20. 4 The light-emitting device 20 can perform wavelength conversion of near-ultraviolet light and blue light emitted from the light-emitting element 25 by using a plurality of red, green, blue, and yellow phosphors included in the transparent member 23 to obtain white light. FIG. 33 shows that a plurality of phosphors 34 such as red, green, blue, and yellow are used to perform wavelength conversion of light such as near-ultraviolet light and blue light emitted from a light emitting element 35 such as a light emitting diode (LED), thereby performing white A third prior art light emitting device 30 that emits light. In Fig. 33, the light-emitting device 30 is mainly composed of a base body 31 made of an insulator, a frame-shaped reflecting member 3 2, a transparent resin 33, and a light-emitting element 35. The base body 31 has a mounting portion 31a for mounting the light-emitting element 35 on the upper center portion. The base 31 has a mounting portion 31a and a pin for electrically connecting the inside and outside of the light emitting device from the outer periphery thereof, or a wiring conductor (not shown) made of metalized wiring or the like. The reflecting member 32 is adhered and fixed to the upper 95381.doc 1245436 surface of the base 31, and a through hole 32a having a larger opening than a lower opening is formed in the upper surface, and the inner peripheral surface is a reflection reflecting light emitted from the light emitting element 35. Face 32b. The transparent resin 3 3 is filled in the reflection member 32 and contains a phosphor 34 that excites the light emitted by the light emitting element 35 and performs wavelength conversion. The light emitting element 35 is fixed on the mounting portion 31a. The substrates 12, 21, and 31 are made of alumina sintered body (alumina ceramic), nitrided sintered body, mullite sintered body, ceramic such as glass ceramic, or epoxy resin. When the substrates 12, 21, 31 are made of ceramics, a metal paste composed of tungsten (w), molybdenum (MO), manganese (Mn), or the like is sintered thereon at a high temperature to form a wiring conductor. In the case where the substrates 12, 21, and 31 are made of resin, a pin made of copper (Cu) or iron (Fe) -nickel (Ni) alloy or the like is cast and fixed to the substrates 12, 21, 31. internal. In addition, the frame body 13 and the reflection members 22 and 32 are formed so as to form through holes 13a, 22a, and 32a having an upper opening larger than that of the lower opening, and reflection surfaces 13b, 22b, and 32b for reflecting light are provided on the inner peripheral surface. Frame-like. Specifically, it is formed of a metal such as aluminum (A1) or Fe-Ni _- (Co) alloy, a ceramic such as alumina ceramics, or a resin such as epoxy resin, and is formed by a molding technique such as cutting processing, mold molding, or extrusion molding. In addition, the reflection surfaces 13b, 2 holes, and 3 reflections of the frame body 13 and the reflection members 22 and 32 are obtained by polishing and flattening the inner peripheral surfaces of the through holes 13a, 22a, 32 & or by a vapor deposition method or a plating method. A metal such as aluminum is coated on the inner peripheral surfaces of the through holes i3a, 22a, and 32a, and is formed as a member that can effectively reflect the light of the light emitting elements 14, 35, and 35 in the future. In addition, the frame u and the reflecting members 22 and 32 are bonded to the base body 12, 2 1, 3 1 by using a solder material such as solder or silver (Ag) solder or a bonding material such as a resin bonding material 95381.doc 1245436. The inner peripheral surfaces of the frame body 13 and the reflection members 22 and 32 surround the mounting portions 12a, 21a, and 31a. In the first and third prior arts, the wiring conductors and the light-emitting elements arranged on the outer periphery of the placement portions 12a and 3 1a are electrically connected via electrical connection mechanisms (not shown) such as bonding wires or metal balls, and the electrodes 36. 4, 3 5, and then fill the inside of the frame 13 and the reflective member 32 with a light-transmitting member 15 such as epoxy resin and silicone resin containing a phosphor by an injection machine such as a dispenser so as to cover the light-emitting elements 14, 35 The light-emitting device U, 30 can be made by using a baking oven to thermally cure the light, and can take out light emitted from the light-emitting elements 14 and 35 by phosphor wavelength conversion and have light having a desired wavelength spectrum. In the second prior art, the light emitting element 25 is electrically connected to the conductor layer 27 disposed on the mounting portion 21a via an electrode 26 provided on the lower surface of the light emitting element 25. The electrode of the light-emitting element 25 and the conductive layer 27 are joined by a conductive adhesive material 28 such as solder or silver paste (resin containing silver particles). The transparent member 23 is made of transparent resin such as epoxy resin containing silicon and silicone resin, and is filled into the inside of the reflecting member 22 by an injection machine such as a dispenser so as to cover the light-emitting element 25 and heat it in a chess oven. Formed by curing. Thereby, light having a desired wavelength spectrum can be taken out by long-wavelength conversion of light from the light-emitting element 25 using a phosphor. The light emitting device 30 is powered by a current supplied from an external circuit (not shown).

近年來，將上述發光裝置作爲照明用 而利用的動向正在 95381.doc 1245436 增加’在輻射強度、放熱特性中要求更高特性的發光裝置。 又，在使用了發光元件的發光裝置中對長壽命性的期待也 不少。 相關技術，有特開2003-3 7298號公報。 在圖3 1所示的第一先前技術的發光裝置丨丨中，爲了使從 發光元件14發光的光有效地向發光裝置丨丨的外部輻射，例 如以研磨加工使由陶瓷構成的基體12的上面平滑，或在基 體12的上面上形成銀、鋁或金等金屬膜，以使基體12的上 面的反射率提高。但是，在爲使透光性構件15的内部含有 螢光體且可波長變換從發光元件14發光的光的發光裝置η 的情況下，從發光元件14發光的光透過透光性構件15並通 過用基體12的上面進行正反射，從而具有難以激勵正反射 方向以外的螢光體，爲了主要用一部分的螢光體進行波長 變換，波長變換的效率降低，光輸出或亮度、彩色再現性 降低等問題。 又在基體12由陶瓷構成的情況下，通過由基體12吸收 光’從而基體12的上面中的反射率易於降低。其結果，在 發光裝置得不到所希望的光輸出，並且也具有不能得到近 年來所希望的光取出效率的問題。此外，在爲了防止基板 12的光吸收而在基體12的上面上形成金屬膜的情況下，具 有需要利用電鍍或蒸鍍等形成金屬膜，製造工序增多且製 造成本升向的問題。 又在基體12由％氧樹脂或液晶聚合物等樹脂材料構成 的情況下，由於無法經由基體12將發光元件14發出的熱有 95381.doc 1245436 ::地幸田射到外部，&由該熱導致發光元件14的發光效率顯 者降低結果，具有發光裝置11的光輸出降低的問題。 進而，在含有用來被覆發光元件14並且將從發光元件14 t光的光進行波長變換的螢光體的透光性構件15中，由於 t想使螢光體的含有率提高且提高波長變換的效率，則從 I光裝置輻射的光易被螢光體妨害，故具有無法提高光輸 出的問題。此外，相反若降低螢光體的含有率，則波長變 換的效率降低，得不到所希望的波長的光，其結果具有無 法提高光輸出的問題。 在圖32中示出的第二先前技術的發光裝置20中，在將發 光π件25黏接固定在安放部2U的導體層27上時，由於導電 险黏接材料28將導體層27露出擴展等，導電性黏接材料28 的厚度容易偏離，故存在發光元件25容易以傾斜的狀態接 。的問題。若在發光元件25傾斜的狀態下安放在安放部21 a 上則具有難以用反射構件22以所希望的輻射角度使從發 光元件2 5發光的光反射並向外部良好地出射，從發光裝置 發光的光的輻射強度容易降低的問題。 又’若用來將發光元件25接合固定在導體層27上的導電 陡黏接材料2 8的厚度偏離，則難以使從發光元件2 5産生的 熱經由導電性黏接材料28及基體21而有效地輻射到外部。 果，具有發光元件25的溫度上升，從發光元件25發光 的光的輻射強度容易降低，無法穩定地維持從發光裝置發 光的光的輻射強度的問題。 進而，通過將用來接合導體層27和發光元件25的導電性 95381.doc 1245436 黏接材料28比發光元件25的外周還流出到外側，該流出的 導電性黏接材料2 8覆蓋基體21的上面，從而易於被流出了 從發光元件25或螢光體發出的光的導電性黏接材料28吸 收’具有容易産生從發光裝置輻射的光的輻射強度的降 低、亮度或彩色再現性的降低的問題。 又，由於用來接合導體層27與發光元件25的導電性黏接 材料28從安放部21 a和發光元件25之間露出，故從發光元件 25和螢光體發出的光照射到導電性黏接材料2 $上。照射到 該導電性黏接材料2 8上的光一部分容易被導電性黏接材料 2 8吸收’具有易於産生從發光裝置輻射的光的輻射強度降 低、亮度和彩色再現性降低的問題。 又，在從發光元件25發光的光爲紫外光的情況下，若發 光的光照射到導電性黏接材料2 8上，則導電性黏接材料2 8 劣化，導體層27與發光元件25的接合強度降低，難以將發 光元件25長期地牢固固定在導體層27上。其結果，具有容 易産生發光元件2 5的電極2 6與導體層2 7斷線等不利現象， 使發光震置長壽變得困難。 又，近年來期望進一步提高發光裝置的輻射強度。然而， 在第三先前技術的發光裝置中，若爲了提高輻射光強度而 進一步增大輸入到發光元件35的電流值，則具有發光元件 35的發光強度與電流值成正比而不提高，容易產生偏離， 無法得到穩定的輻射強度的問題。 更詳細地說，若爲了提高輻射強度而進一步增大輸入到 發光兀件35的電流值，則由於發光元件乃的接合部溫度（結 95381.doc -12- 1245436 溫）上升，發光元件35的發光效率顯著降低，故具有無法得 到與輸入電流成正比的輪射強度。又，具有由於預測爲起 因於熱的發光波長的偏差而無法得到穩定的輻射強度的問 題0 此外，在含有被覆發光元件3 5且用來將來自發光元件3 5 的光進行波長變換的螢光體34的透明樹脂33中，若提高榮 光體34的含有率，以使波長變換的效率提高，則由於由螢 光體34進行過波長變換的光易被其他螢光體34妨害，故具 有無法提高輻射強度的問題。 又，相反的，若降低螢光體34的含有率，則波長變換的 效率降低，無法得到所希望的波長的光，其結果，具有無 法提高輻射強度的問題。 又，從發光元件35産生的熱在基體31中傳遞，易於傳遞 到反射構件32,通過反射構件32與基體31的熱膨脹差，反 射構件32熱膨脹而變形，也具有射角度偏離或H射強度 降低的問題。 【發明内容】 因此，本發明馨於上述問題，其目的在於提供一種在可 提高螢錢的波長變換效率、提高發光裝置的光輸出，並 且可以使從發光元件發光的光有效地輕射到 外部，軸上光 度、7C度及彩色再現性等照明特性優越的發光元件收納用 封裝及發光裝置以及照明裝置。 本發明的其他目的在於’提供一種可以將發光元件的熱 良好地放熱，並長期穩^地維持輻射特性的發光元件收納 95381.doc 1245436 用封裝及發光裝置以及照明裝置。 本發明之發光元件收έ內用# 内用封裝之特徵在於備有··在上面 形成了發光元件的安放部的包含 I W已S阄是的基體；以圍繞所述 安放部的方式接合在該基體的上面的外周部，並且内周面 作爲反射從所述發光元件發光的光的反射面的框體；-端 开/成於所述上面上，與所述發光元件的電極電連接，並且 f一端導出至所述基體的側面或下面的配線導體；及以覆 蓋斤述表光元件的方式設置在所述框體的内側，且含有將 斤述！X光元件發光的光進行波長變換的榮光體的透光性構 件；所述基體的所述陶竟所含的晶粒的平均粒徑爲1〜5 μηι 〇 本發明之發光裝置之特徵在於備有：所述發光元件收納 用封裝，及被安放在所述安放部上且與所述配線導體電連 接的發光元件。 在本發明的特徵在於：所述透光性構件的上面與所述發 光元件的發光部之間的距離爲〇1〜〇.8 mm。 在本發明中，其特徵在於··所述配線導體的所述一端成 爲所述發光元件通過導電性粘接材料電連接的導體層，在 5亥導體層的周圍形成有由絕緣體構成的凸部。 在本發明中，其特徵在於：所述導體層比所述發光元件 的外周還位於内側。 在本發明中，其特徵在於：所述凸部傾斜爲伴隨其側面 朝向基體側而向外側擴展。 在本發明中’其特徵在於：所述配線導體的所述一端成 9_oc …4· 1245436 爲所述發光元件通過導電性黏接材料而電連接的導體層， 在所述導體層上，在比所述發光元件的外周還位於内側的 上面上形成有凸部。 在本發明中，其特徵在於：所述安放部從所述基體的上 面突出。 在本發明中，其特徵在於：所述突出的安放部傾斜爲伴 隨其側面朝向基體側而向外側擴展。 在本發明中，其特徵在於：所述發光元件的發光部比所 述反射面的下端還位於上側，所述透光性構件，其上面與 所述發光部之間的距離爲〇1〜0.5 mm。 在本發明中，其特徵在於：所述透光性構件，其表面的 算術平均粗糙度爲中央部比外周部大。 在本發明中，其特徵在於··所述安放部從基體上面突出， 並且在其上面形成由所述配線導體的所述一端構成且發光 元件通過導電性黏接材料電連接的導體層，在該導體層的 周圍形成有由絕緣體構成的凸部。 在本發明中，其特徵在於：所述導體層比所述發光元件 的外周還位於内側。 在本發明中，其特徵在於：所述凸部傾斜爲伴隨其側面 朝向基體側而向外側擴展。 本發明之發光裝置之特徵在於備有：包含平板狀的陶瓷 的基體；發光元件；與該基體的上面接合，在上側主面的 中央部上形成將所述發光元件安放在上面的凸狀安放部， 在上側主面的外周部上形成了圍繞所述安放部且將其内周 95381.doc -15- 1245436 面作爲將所述發光元件發光的光反射的反射面的側壁部的 反射構件；及以覆蓋所述發光元件的方式設置在所述側壁 邛的内側，並含有將所述發光元件發光的光進行波長變換 的螢光體的透光性構件；其中所述反射面，位於連接其下 鳊位於所述發光元件的端部的發光部和所述安放部的上面 及側面之間的角的光路線上，或者比該光路線還位於下 側，所述透光性構件之上面與所述發光部之間的距離爲〇 · 1 〜〇·5 mm，所述基體中的所述陶瓷所含的晶粒的平均粒徑 爲1〜5 μηι 〇 在本發明中，其特徵在於：所述基體從其上面到外面爲 止形成配線導體；所述反射構件形成有貫通孔，其係在所 述安放部周圍貫通上下主面且位於比所述光路線還下側； 所述發光7L件的電極與所述基體上面的所述配線導體通過 所述貫通孔，由導線電連接著。 在本毛明中，其特徵在於：所述貫通孔在其内部填充有 含有了絕、緣性的Α反射粒子的絕緣性膏，則更與所述反射 構件的上側主面齊平面。 本發明之照明裝置之特徵在於：設置爲使所述發光裝置 成爲規定配置。 據本I月由於基體的陶兗所含的晶粒的平均粒徑爲1 〜5 μιη ’故由於晶粒成爲非常高的密度，所以晶粒間的晶 粒邊界或氣孔非常小，基體表面的晶粒所占的比例增大。 因此，了以有效地抑制從發光元件發光的光進入基體内 ^，以提㉟反射率，其結果可以提高發光裝置的光輸出。 95381.doc -16 - 1245436 又，由於利用高密度地佔據基體表面的晶粒而在基體表 面上適度地形成凹凸，故可以使從發光元件發光的光適度 地漫反射，使光照射到更多的螢光體上。其結果，可以使 波長變換效率提高，可以提高光輸出或亮度、彩色再現性。 此外’由於由高密度的晶粒構成基體，故可以提高基體 的熱傳導率，發光元件所發出的熱通過基體有效地輻射到 外部’從而可以有效地抑制起因於熱的發光元件的發光效 率的降低。由此，可以抑制發光裝置的光輸出降低。 根據本發明，發光裝置備有··本發明的發光元件收納用 封裝，安放在安放部上且與配線導體電連接的發光元件。 因此，可以有效地反射從發光元件發光的光，使更多的螢 光體激勵’可以成爲光輸出提高，亮度或彩色再現性等照 明特性非常優越的裝置。 根據本發明，較佳者係透光性構件的上面與發光元件的 發光部之間的距離爲〇 · 1〜〇 · 8 mm。因此，可以由透光性構 件所含的螢光體高效地波長變換從發光元件發光的光，並 且可以使可有效抑制這些進行過波長變換的光被螢光體妨 害且高效地輻射到透光性構件外部的亮度或彩色再現性等 照明特性非常良好。 根據本發明，所述配線導體的所述一端成爲發光元件通 過導電性黏接材料電連接的導體層，在導體層周圍形成有 由絕緣體構成的凸部。因此，可以由凸部防止導電性黏接 材料流出導體層並擴展，可以使導電性黏接材料的厚度均 勻並使發光元件水平地安放在導體層上。其結果，可以從 95381.doc -17- 1245436 發光元件以所希望的射出角度發光，可以用框體以所希望 的幸田射角度反射從發光元件發光的光，可以增強從發光裝 置發光的光的輻射強度。 又，通過可以使發光元件水平地安放在導體層上，從而 能使從發光元件産生的熱無偏差、均勻地經由導電性黏接 材料及基體，而有效地輻射到外部。其結果，可以將發光 凡件的溫度穩定地一直維持，可以以高狀態將從發光元件 發光的光的輻射強度保持爲穩定。 進而，可以有效地防止從發光元件發光的光通過凸部而 照射到導電性黏接材料，可以有效地防止從發光裝置輻射 的光被導電性黏接材料，産生輻射強度的降低、亮度或彩 色再現性的降低，可以提供輻射強度高、發光特性優越的 發光裝置。 根據本發明，由於導體層比發光元件的外周還位於内 側’故可以防止用來接合導體層與發光元件的導電性黏接 材料從導體層與發光元件之間露出，可以極有效地防止從 發光元件發光的光。其結果，可以防止從發光元件發光的 光被導電性黏接材料吸收或作爲輻射強度低的光而反射， 可以使從發光裝置發光的光的輻射強度成爲高的狀態，並 且使亮度或彩色再現性優越。 又，即使從發光元件發光的光爲紫外線的光，導電性黏 接材料也不會劣化，可以一直使導體層和發光元件的接合 強度高，可以將發光元件長期牢固固定在導體層上。其結 果，可以使發光元件的電極與導體層的電連接長期可靠， 95381.doc •18- 1245436 可以使發光裝置壽命長。 根據本發明，由於傾斜 、斜爲伴卩通凸部的側面朝向基體側而 向外側擴張’ &凸部的側面與基體的上面的角落的空氣易 於跑出，防止空氣進入該角落部，可以有效地防止在導電 性黏接材料及透光性構件上産生空隙，由於溫度變化導致 空隙中的空氣膨脹、産生剝離或裂紋。又，可以以凸部外 側的傾斜的側面使光良好地反射到上側’可以提高發光效 率。 根據本發明，所述配線導體的所述一端成爲發光元件通 過導電性黏接材料電連接的導體層，在導體層上，在比發 光元件的外周還位於内側的上面上形成有凸部。因此，由 凸部將發光元件提高到比導體層還上側，可以在發光元件 的下面和導體層的上面之間確實地設置間隙。由此，導電 性黏接材料由發光元件的重量而按壓流動，露出導體層並 擴展’可以在導體層上將導電性黏接材料形成爲均勻的厚 度，使發光元件水平地安放在導體層上。其結果，可以使 從發光元件以所希望的射出角度發光，用框體使從發光元 件發光的光以所希望的輕射角度反射並向外部射出，增強 從發光裝置發光的光的輻射強度。 又，通過可以在導體層上將導電性黏接材料形成爲均勻 的厚度，使發光元件水平地安放在導體層上，從而能夠使 從發光元件産生的熱經由導電性黏接材料及基體並有效輻 射到外部。其結果，可以將發光元件的溫度一直保持爲穩 定，在高的狀態下將從發光元件發光的光的輻射強度穩定 95381.doc •19- 1245436 地維持。 又，可以有效地防止導電性黏接材料流出到比發光元件 的外周還外側的位置’在發光元件的下側保持，可以有效 地防止從發光元件發光的光被流出到比發光元件的外周還 夕▲卜側的導電性黏接材料。其結果，可以提高輻射強度高且 冗度和彩色再現性等光特性優越的發光裝置。 根據本發明，由於安放部爲突出著的，故安放部與反射 構件的下：^可罪地絕緣。因此，從平面看，可以使框體的 下端更接近安放部，可以用框體的反射面更好地反射從發 光元件發光的光。 根據本發明，由於傾斜爲伴隨凸出的安放部的側面朝向 基體侧而向外側擴張，故可以使從發光元件產生的熱的擴 散性提高，並且可以利用突出的安放部的側面，有效地使 光向上方反射。其結果，可以使發光元件的發光效率及螢 光體的波長變換效率提高，並且可以使從發光元件或螢光 體發出的光有效地向上方反射，能夠長期地以高輻射強度 輸出光。 根據本發明’由於發光元件的發光部比反射面的下端還 位於上側，且透過性構件的上面與發光部之間的距離爲〇· J 〜0.5 mm，故可以使從發光元件發出的光中、不會被反射 面反射而直接從框體的上側開口輻射的光成爲非常高的強 度。即，由發光元件的發光部上側的恒定厚度的透光性構 件所含螢光體高效地對從發光元件發出的光進行波長變 換，可以使那些波長變換過的光不會被螢光體妨害，並直 95381.doc -20- I245436In recent years, the trend of utilizing the above-mentioned light-emitting devices for lighting is increasing at 95381.doc 1245436 '. Light-emitting devices with higher characteristics in terms of radiation intensity and heat radiation characteristics are required. Moreover, in a light-emitting device using a light-emitting element, long life expectancy is also expected. Related technologies include JP 2003-3 7298. In the first prior art light-emitting device shown in FIG. 31, in order to efficiently radiate light emitted from the light-emitting element 14 to the outside of the light-emitting device, the substrate 12 made of ceramic is polished, for example, by grinding. The upper surface is smooth, or a metal film such as silver, aluminum, or gold is formed on the upper surface of the base 12 to increase the reflectance of the upper surface of the base 12. However, in the case of a light-emitting device η that includes a phosphor inside the light-transmitting member 15 and can wavelength-convert light emitted from the light-emitting element 14, the light emitted from the light-emitting element 14 passes through the light-transmitting member 15 and passes through. The specular reflection is performed on the upper surface of the substrate 12, so that it is difficult to excite phosphors in directions other than the specular reflection direction. In order to perform wavelength conversion mainly with a part of phosphors, the efficiency of wavelength conversion is reduced, and light output, brightness, and color reproducibility are reduced. problem. When the base body 12 is made of ceramics, the reflectivity of the upper surface of the base body 12 tends to decrease by absorbing light 'from the base body 12. As a result, a desired light output cannot be obtained in the light-emitting device, and there is a problem that a desired light extraction efficiency cannot be obtained in recent years. In addition, in the case where a metal film is formed on the upper surface of the base 12 in order to prevent light absorption of the substrate 12, there is a problem that it is necessary to form a metal film by plating, vapor deposition, or the like, which increases the number of manufacturing processes and causes a problem of upward orientation. In the case where the substrate 12 is made of a resin material such as a% oxygen resin or a liquid crystal polymer, the heat emitted from the light-emitting element 14 cannot be transmitted through the substrate 12 to 95381.doc 1245436 :: Tachikota is emitted to the outside. As a result, the light-emitting efficiency of the light-emitting element 14 is significantly reduced, and the light output of the light-emitting device 11 is reduced. Furthermore, in the light-transmitting member 15 including the phosphor for covering the light-emitting element 14 and wavelength-converting the light from the light-emitting element 14 t, since t wants to increase the content of the phosphor and increase the wavelength conversion Efficiency, the light radiated from the I-light device is easily hindered by the phosphor, so there is a problem that the light output cannot be improved. On the other hand, if the content of the phosphor is decreased, the efficiency of wavelength conversion is reduced, and light of a desired wavelength cannot be obtained. As a result, there is a problem that the light output cannot be increased. In the light emitting device 20 of the second prior art shown in FIG. 32, when the light emitting π member 25 is adhered and fixed on the conductor layer 27 of the mounting portion 2U, the conductor layer 27 is exposed and expanded due to the conductive adhesive material 28. For example, since the thickness of the conductive adhesive material 28 is likely to deviate, the light emitting element 25 may be easily connected in an inclined state. The problem. If the light-emitting element 25 is placed on the mounting portion 21 a with the light-emitting element 25 inclined, it is difficult for the reflecting member 22 to reflect the light emitted from the light-emitting element 25 at a desired radiation angle and emit the light well to the outside, thereby emitting light from the light-emitting device. The problem is that the radiation intensity of the light is easily reduced. If the thickness of the conductive steep adhesive material 28 used to bond and fix the light-emitting element 25 to the conductor layer 27 deviates, it is difficult to make the heat generated from the light-emitting element 25 pass through the conductive adhesive material 28 and the substrate 21. Effectively radiates to the outside. As a result, there is a problem that the temperature of the light-emitting element 25 rises, and the radiation intensity of light emitted from the light-emitting element 25 tends to decrease, and the radiation intensity of light emitted from the light-emitting device cannot be stably maintained. Further, the conductive 95381.doc 1245436 adhesive material 28 for bonding the conductor layer 27 and the light-emitting element 25 flows out to the outside than the outer periphery of the light-emitting element 25, and the discharged conductive adhesive material 28 covers the substrate 21 As described above, it is easily absorbed by the conductive adhesive material 28 flowing out of the light emitted from the light emitting element 25 or the phosphor, and has a reduction in radiation intensity, a reduction in brightness or color reproducibility that is liable to generate light radiated from the light emitting device. problem. In addition, since the conductive adhesive material 28 for bonding the conductor layer 27 and the light-emitting element 25 is exposed from between the mounting portion 21 a and the light-emitting element 25, light emitted from the light-emitting element 25 and the phosphor is radiated to the conductive adhesive. Pick up material 2 $ on. Part of the light irradiated onto the conductive adhesive material 28 is easily absorbed by the conductive adhesive material 28, which has a problem that the radiation intensity of light radiated from the light-emitting device is easily reduced, and the brightness and color reproducibility are reduced. When the light emitted from the light-emitting element 25 is ultraviolet light, if the light-emitting light is irradiated onto the conductive adhesive material 28, the conductive adhesive material 28 is deteriorated, and the conductive layer 27 and the light-emitting element 25 The bonding strength is reduced, and it is difficult to firmly fix the light-emitting element 25 to the conductor layer 27 for a long period of time. As a result, disadvantages such as disconnection of the electrode 26 and the conductive layer 27 of the light-emitting element 25 easily occur, and it is difficult to make the light-emitting device to have a long life. In addition, in recent years, it has been desired to further increase the radiation intensity of light emitting devices. However, in the light-emitting device of the third prior art, if the current value input to the light-emitting element 35 is further increased in order to increase the intensity of the radiated light, the light-emitting intensity of the light-emitting element 35 is proportional to the current value without increasing, which is likely to occur. The problem is that the radiation intensity cannot be obtained stably. In more detail, if the current value input to the light-emitting element 35 is further increased in order to increase the radiation intensity, the temperature of the junction portion of the light-emitting element (the temperature of junction 95381.doc -12-1245436) increases, and the temperature of the light-emitting element 35 increases. The luminous efficiency is significantly reduced, so it has a wheel emission intensity that is not proportional to the input current. In addition, there is a problem that a stable radiation intensity cannot be obtained due to a deviation in the emission wavelength due to heat. In addition, fluorescent light including a coating light-emitting element 35 and wavelength-converted light from the light-emitting element 35 is included. In the transparent resin 33 of the body 34, if the content ratio of the glare body 34 is increased to improve the efficiency of wavelength conversion, the light that has undergone wavelength conversion by the phosphor 34 is likely to be obstructed by other phosphors 34, and therefore it cannot be used. The problem of increasing radiation intensity. On the other hand, if the content of the phosphor 34 is decreased, the efficiency of wavelength conversion is reduced, and light of a desired wavelength cannot be obtained. As a result, there is a problem that the radiation intensity cannot be increased. In addition, the heat generated from the light-emitting element 35 is transmitted in the base 31 and is easily transmitted to the reflective member 32. Due to the difference in thermal expansion between the reflective member 32 and the base 31, the reflective member 32 is thermally expanded and deformed. The problem. [Summary of the Invention] Therefore, the present invention is based on the above problem, and an object thereof is to provide a wavelength conversion efficiency of a fluorescent lamp, an increase in light output of a light emitting device, and light emitted from a light emitting element to the outside can be effectively lightly emitted. Light-emitting element storage package, light-emitting device, and lighting device with excellent lighting characteristics such as on-axis luminance, 7C degree, and color reproducibility. Another object of the present invention is to provide a light-emitting element housing capable of radiating heat of a light-emitting element well and stably maintaining radiation characteristics for a long period of time. 95381.doc 1245436 Package, light-emitting device, and lighting device. The internal light-emitting element of the present invention # The internal package is characterized by being provided with a base including IW and a base on which the mounting portion of the light-emitting element is formed; the mounting portion is bonded to the mounting portion so as to surround the mounting portion. An outer peripheral portion of the upper surface of the base body, and an inner peripheral surface serving as a frame reflecting a surface that reflects light emitted from the light emitting element;-opened / formed on the upper surface, and electrically connected to the electrode of the light emitting element, and f One end leads out to the side or underneath of the base body; and a wiring conductor is provided on the inside of the frame so as to cover the surface light element, and contains the body surface! The light-transmitting member of the glare body that performs wavelength conversion of the light emitted by the X-ray element; the average particle diameter of the crystal grains contained in the ceramic of the base body is 1 to 5 μηι. The light-emitting device of the present invention is characterized in that The light emitting element storage package includes a light emitting element that is placed on the mounting portion and is electrically connected to the wiring conductor. The present invention is characterized in that the distance between the upper surface of the light-transmitting member and the light-emitting portion of the light-emitting element is 0.001 to 0.8 mm. In the present invention, the one end of the wiring conductor serves as a conductor layer in which the light-emitting element is electrically connected by a conductive adhesive material, and a convex portion made of an insulator is formed around the conductor layer. . In the present invention, the conductor layer is located further inside than the outer periphery of the light emitting element. In the present invention, the convex portion is inclined so as to expand outward as the side surface faces the base body side. In the present invention, it is characterized in that the one end of the wiring conductor is 9_oc ... 4 · 1245436 is a conductor layer which is electrically connected to the light-emitting element through a conductive adhesive material, and the conductor layer is at a ratio of A convex portion is formed on an upper surface of the light emitting element whose outer periphery is also located on the inner side. In the present invention, the placement portion is protruded from an upper surface of the base body. In the present invention, the protruding mounting portion is inclined so as to expand outward as its side faces toward the base side. In the present invention, the light-emitting part of the light-emitting element is located on the upper side than the lower end of the reflecting surface, and the distance between the upper surface of the light-transmitting member and the light-emitting part is 0 to 0.5. mm. In the present invention, the light-transmitting member has an arithmetic average roughness on a surface of which is larger in a central portion than in a peripheral portion. In the present invention, the placement portion is protruded from the upper surface of the base body, and a conductor layer composed of the one end of the wiring conductor and a light-emitting element electrically connected by a conductive adhesive material is formed on the upper portion. A convex portion made of an insulator is formed around the conductor layer. In the present invention, the conductor layer is located further inside than the outer periphery of the light emitting element. In the present invention, the convex portion is inclined so as to expand outward as the side surface faces the base body side. The light-emitting device of the present invention is characterized by comprising: a base body including a plate-shaped ceramic; a light-emitting element; bonded to the upper surface of the base body, and forming a convex shape in which the light-emitting element is placed on the center of the upper main surface; A reflecting member formed on the outer peripheral portion of the main surface on the upper side and surrounding the mounting portion and having an inner circumference of 95381.doc -15-1245436 as a side wall portion of the reflecting surface that reflects light emitted by the light emitting element; And a light-transmitting member which is provided on the inner side of the side wall 的 so as to cover the light-emitting element and includes a phosphor which performs wavelength conversion of light emitted by the light-emitting element; The chin is located on the light path at an angle between the light-emitting part at the end of the light-emitting element and the upper surface and the side surface of the mounting part, or is located on the lower side than the light path. The distance between the light-emitting parts is 0.1 to 0.5 mm, and the average particle size of the crystal grains contained in the ceramic in the matrix is 1 to 5 μηι. In the present invention, it is characterized in that: Shuji A wiring conductor is formed from the upper surface to the outer surface; the reflective member is formed with a through hole that penetrates the upper and lower main surfaces around the mounting portion and is located below the optical path; the electrodes of the light-emitting 7L member and The wiring conductor on the base body is electrically connected by a lead wire through the through hole. The present Maoming is characterized in that the inside of the through hole is filled with an insulating paste containing insulating A reflecting particles, and is further flush with the upper main surface of the reflecting member. The lighting device of the present invention is characterized in that the lighting device is provided in a predetermined arrangement. According to this month, since the average grain size of the crystal grains contained in the ceramic substrate of the substrate is 1 to 5 μm, the crystal grains have very high density, so the grain boundaries or pores between the crystal grains are very small. The proportion of grains increases. Therefore, in order to effectively suppress the light emitted from the light emitting element from entering the substrate ^ to improve the reflectance, the light output of the light emitting device can be improved as a result. 95381.doc -16-1245436 In addition, due to the high-density occupation of crystal grains on the surface of the substrate, unevenness is appropriately formed on the surface of the substrate, so that light emitted from the light-emitting element can be diffusely reflected moderately, so that more light is irradiated. On the phosphor. As a result, the wavelength conversion efficiency can be improved, and the light output, brightness, and color reproducibility can be improved. In addition, since the matrix is composed of high-density crystal grains, the thermal conductivity of the matrix can be improved, and the heat emitted from the light-emitting element is effectively radiated to the outside through the matrix, so that the reduction in the light-emitting efficiency of the light-emitting element due to heat can be effectively suppressed. . This can suppress a reduction in the light output of the light emitting device. According to the present invention, the light-emitting device is provided with the light-emitting element housing package of the present invention, and the light-emitting element is mounted on the mounting portion and is electrically connected to the wiring conductor. Therefore, the light emitted from the light-emitting element can be effectively reflected, and more phosphors can be excited ', which can improve the light output and have excellent lighting characteristics such as brightness and color reproducibility. According to the present invention, the distance between the upper surface of the light-transmitting member and the light-emitting portion of the light-emitting element is preferably 0. 1 to 0. 8 mm. Therefore, the light emitted from the light-emitting element can be efficiently wavelength-converted by the phosphor contained in the light-transmitting member, and it is possible to effectively suppress these wavelength-converted light from being hindered by the phosphor and efficiently radiating the light. Illumination characteristics such as brightness and color reproducibility outside the sexual member are very good. According to the present invention, the one end of the wiring conductor is a conductor layer in which the light emitting element is electrically connected by a conductive adhesive material, and a convex portion made of an insulator is formed around the conductor layer. Therefore, the convex portion can prevent the conductive adhesive material from flowing out of the conductive layer and spread, and the thickness of the conductive adhesive material can be made uniform and the light-emitting element can be horizontally placed on the conductive layer. As a result, the light emitting element can emit light at a desired emission angle from 95381.doc -17- 1245436, and the light emitted from the light emitting element can be reflected by the frame at a desired angle of Kota radiation, and the light emitted from the light emitting device can be enhanced. Radiation intensity. Furthermore, the light-emitting element can be horizontally placed on the conductor layer, so that the heat generated from the light-emitting element can be efficiently radiated to the outside through the conductive adhesive material and the substrate without deviation. As a result, the temperature of the light emitting element can be stably maintained at all times, and the radiation intensity of the light emitted from the light emitting element can be kept stable in a high state. Furthermore, it is possible to effectively prevent the light emitted from the light-emitting element from being radiated to the conductive adhesive material through the convex portion, and it is possible to effectively prevent the light radiated from the light-emitting device from being caused by the conductive adhesive material to reduce radiation intensity, brightness, or color. A decrease in reproducibility can provide a light-emitting device with high radiation intensity and excellent light-emitting characteristics. According to the present invention, since the conductor layer is located inside than the outer periphery of the light-emitting element, the conductive adhesive material used to join the conductor layer and the light-emitting element can be prevented from being exposed between the conductor layer and the light-emitting element. Element glowing light. As a result, the light emitted from the light-emitting element can be prevented from being absorbed by the conductive adhesive material or reflected as light with low radiation intensity, the light intensity emitted from the light-emitting device can be made high, and brightness or color can be reproduced Sex is superior. In addition, even if the light emitted from the light emitting element is ultraviolet light, the conductive adhesive material does not deteriorate, and the bonding strength between the conductive layer and the light emitting element can be always high, and the light emitting element can be firmly fixed to the conductive layer for a long time. As a result, the electrical connection between the electrode of the light-emitting element and the conductor layer can be made reliable for a long time, and 95381.doc • 18-1245436 can make the light-emitting device have a long life. According to the present invention, since the sides of the convex portion that is slanted and slanted toward the base side expand outward, the air in the corner of the side of the convex portion and the upper side of the base is easy to run out, preventing air from entering the corner portion, so that Effectively prevent voids from being generated in the conductive adhesive material and the light-transmitting member, and the air in the voids may expand due to temperature changes, causing peeling or cracking. Further, it is possible to reflect light to the upper side with the inclined side surface on the outer side of the convex portion, and the luminous efficiency can be improved. According to the present invention, the one end of the wiring conductor is a conductor layer in which the light emitting element is electrically connected by a conductive adhesive material, and a convex portion is formed on the conductor layer on an upper surface located on the inner side than the outer periphery of the light emitting element. Therefore, the light-emitting element is raised above the conductive layer by the convex portion, and a gap can be surely provided between the lower surface of the light-emitting element and the upper surface of the conductive layer. As a result, the conductive adhesive material is pressed and flowed by the weight of the light emitting element, and the conductor layer is exposed and expanded. 'The conductive adhesive material can be formed on the conductor layer to a uniform thickness, so that the light emitting element can be horizontally placed on the conductor layer. . As a result, light can be emitted from the light emitting element at a desired emission angle, and light emitted from the light emitting element can be reflected at a desired light emission angle and emitted to the outside by the frame, thereby enhancing the radiation intensity of the light emitted from the light emitting device. In addition, by forming the conductive adhesive material with a uniform thickness on the conductor layer, the light-emitting element can be horizontally placed on the conductor layer, so that heat generated from the light-emitting element can be efficiently passed through the conductive adhesive material and the substrate. Radiation to the outside. As a result, the temperature of the light-emitting element can be kept constant, and the radiation intensity of light emitted from the light-emitting element can be stably maintained at a high state 95381.doc • 19-1245436. In addition, it is possible to effectively prevent the conductive adhesive material from flowing out to a position outside the outer periphery of the light-emitting element. 'It is held under the light-emitting element, and it is possible to effectively prevent light emitted from the light-emitting element from flowing out to the outer periphery of the light-emitting element. Xi ▲ Bu side conductive adhesive material. As a result, a light emitting device having high radiation intensity and excellent light characteristics such as redundancy and color reproducibility can be improved. According to the present invention, since the mounting portion is protruding, the mounting portion is insulated from the bottom of the reflecting member. Therefore, when viewed from a plane, the lower end of the frame can be brought closer to the mounting portion, and the light emitted from the light emitting element can be better reflected by the reflecting surface of the frame. According to the present invention, since the side surface of the mounting portion that is inclined is expanded outward toward the base side, the heat diffusivity generated from the light-emitting element can be improved, and the side surface of the protruding mounting portion can be effectively used. The light is reflected upwards. As a result, the luminous efficiency of the light emitting element and the wavelength conversion efficiency of the phosphor can be improved, and the light emitted from the light emitting element or the phosphor can be effectively reflected upward, and light can be output at a high radiation intensity for a long period of time. According to the present invention, since the light-emitting portion of the light-emitting element is located on the upper side than the lower end of the reflective surface, and the distance between the upper surface of the transmissive member and the light-emitting portion is 0 · J to 0.5 mm, the light emitted from the light-emitting element can be made The light radiated directly from the upper opening of the frame without being reflected by the reflecting surface becomes a very high intensity. That is, the phosphors contained in the light-transmitting member with a constant thickness above the light-emitting part of the light-emitting element can efficiently perform wavelength conversion of the light emitted from the light-emitting element, so that those wavelength-converted light are not hindered by the phosphor. And straight 95381.doc -20- I245436

接放出到透光性構件的外部。A Λ, ,- „ Α ^、，°果，可以提高發光裝置 的麵射強度且得到良好的軸上光产 光特性。 度、彩色再現性等 1义攸I尤疋件產生的熱向基體傳導，也會由於^ 放部突出’可以有效地抑制安放部與框體之間增：且突d 的基體和透光性構件的接觸面積增大，放熱性提高，熱卢 ，體傳遞。其結果’可以有效抑制由框體與基體的熱膨厢 差而導致框體變形。It is released to the outside of the light-transmitting member. A Λ,,-„Α ^ ,, °, can improve the surface emission intensity of the light-emitting device and obtain good on-axis light emission characteristics. Degree, color reproducibility, etc. heat generated by the substrate to the substrate Conduction can also effectively inhibit the increase between the placement part and the frame due to the ^ protrusion of the placement part: and the contact area between the substrate and the light-transmitting member of the protrusion d is increased, the heat dissipation is improved, and the heat transfer is increased. Result 'can effectively suppress the deformation of the frame caused by the difference in thermal expansion between the frame and the base.

根據本發明，由於透光性構件的表面的算術平均粗縫度 在中央部比外周部還大，故可以抑制從透光性構件的中央 部和外周部射出的光的輻射強度的差。即，可以使從發光 元件發光且不會被框體等反射，直接從透光性構件表面的 :央部輻射強度大的光，由透光性構件表面的中央部的粗 糙面適度地散射，將光強度減弱一些。由此，&高強度高 的透光性構件素面的中央部輻射的光由框體反射，可以使 具與從強度減小的透光性構件的外周部輻射的光的強度近 似，可以減小透光性構件的中央部與外周部的輻射強度的 差。其結果，發光裝置可以在廣泛的範圍内輻射光，可以 抑制通過向發光面的一部分集中輻射強度而産生的、給予 人眼強烈刺激的眩光等現象，可以抑制對人眼的壞影響。 根據本發明，在所述安放部從基體上面突出，並且在其 上面形成由所述配線導體的所述一端構成、發光元件通過 導電丨生黏接材料電連接的導體層，在導體層周圍形成有由 絕緣體構成的凸部。因此，可以使從發光元件的側面向橫 95381.doc 1245436 向或斜下方發光的光良好地反射到框體的反射面，不會被 框體與基體的接合部或基體的表面吸收，可以用框體以所 希望的輻射角度反射，並向外部良好地輻射。其結果，可 以將從發光裝置發光的關的輻射強度穩定地保持爲3高。 又，由於安放部冑出，&安放部和反射構件的下I可以 可靠地絕緣。因此，從平面看，可以將框體的下端更靠近 安放部，可以用框體的反射面更良好地反射從發光元件發 光的光。 又，可以利用由絕緣體構成的凸部防止導電性黏接材料 漏出並擴散，可以使導電性黏接材料的厚度均勻，使發光 元件水平地安放在導體層上。其結果，使從發光元件以所 希望的輻射強度發光，可以用框體以所希望的輻射強度反 射從發光元件發光的光並向外部輻射，可以使從發光裝置 發光的光的輻射強度增強。 又，可以使發光元件水平地安放在導體層上，從而能夠 使從發光元件産生的熱無偏差地均勻地經由導電性黏接材 料及基體，而有效地輻射到外部。其結果，可以將發光元 件的溫度一直穩定地保持，以高的狀態穩定地維持從發光 元件發出的光。 此外，可以有效地防止發光元件發光的光由凸部而照射 到導電性黏接材料上，可以有效地防止從發光裝置輻射的 光被導電性黏接材料吸收，而産生輻射強度的降低、亮度 或彩色再現性的降低，可以提供輻射強度高且發光特性優 越的發光裝置。 95381.doc -22- !245436 根據本發明，由於導體層比發光元件的外周還位於内 側’故可以防止用來接合導體層和發光元件的導電性黏接 材料從導體層與發光元件露出，可以極有效地防止從發光 元件發光的光照射到導電性黏接材料上。其結果，可以防 止從發光元件發光的光被導電性黏接材料吸收或作爲輻射 強度低的光而反射，可以使從發光裝置發光的光的輻射強 度爲兩狀態’並且亮度或彩色再現性優越。 又，即使從發光元件發光的光爲紫外光，導電性黏接材 料也不會劣化，可以使導體層與發光元件的接合強度一直 非常高，可以將發光元件長期牢固地固定在導體層上。其 結果’可以使發光元件與導體層的電連接長期可靠，可以 使發光裝置耐用。 根據本發明，由於傾斜爲凸部的側面朝向基體側而向外 侧擴張，故凸部的側面與基體的上面的角落的空氣易於跑 出’防止空氣進入該角落部，可以有效地防止在導電性黏 接材料及透光性構件上産生空隙，由於溫度變化導致空隙 中的空氣膨脹、產生剝離或裂紋。又，可以以凸部外側的 傾斜的側面使光良好地反射到上側，可以提高發光效率。 根據本發明，發光裝置備有··由平板狀的陶瓷構成的基 體；發光元件；與該基體的上面接合，在上側主面的中央 部上形成將所述發光元件安放在上面的凸狀安放部，在上 側主面的外周部上形成了圍繞所述安放部且將其内周面作 爲將所述發光元件發光的光反射的反射面的側壁部的反射 構件，以覆蓋所述發光元件的方式設置在所述側壁部的内 95381.doc -23 - 1245436 彳並3有將所述發光几件發光的光進行波長變換的榮光 體的透光性構件。反射面係位於連接下端位於所述發光元 件的端部的發光部和所述安放部的上面及側面之間的角的 先路線上’或者比該光路線還位於下側。透光性構件之上 面與所述發光部之間的距離爲〇1〜〇5咖。因此，可以使 4足發光7〇件發出的光中、 干 不《被反射面反射而直接從發光 兀件輻射到上侧的光的強度非常高十利用比發光元件 的毛光4更上侧的恒定厚度的透光性構件所含的螢光體高 效地將從發光元件發出的光進行波長變換，可以使這些波 長變換過的光不會被螢光體妨害，直接放出到透光性構件 的外部。其結果’可以提高發光裝置的輻射強度，使軸上 光度或亮度、彩色再現性等光特性良好。 又，從發光元件産生的熱，容易從一體化的安放部傳遞 到側壁部，特別在反射構件由金屬構成的情況下，熱迅速 地被傳遞到側壁部，並且從側壁部的外側面向外部良好地 轄射。因此’可以利用基體與反射構件的熱膨脹差有效地 抑制反射構件變形，可以將輻射光的光特性長期維持良好。 又’由於反射面位於連接其下端位於所述發光元件的端 部的發光部和所述安放部的上面及側面之間的角的光路線 上’或者比該光路線還位於下側，故可以用反射面有效地 反射從發光元件向橫向或下側方向發光的直接光，可以使 輻射光強度極高。 根據本發明，基體從其上面到外面形成了配線導體，反 射構件形成在安放部的周圍貫通上下主面間且比光路線還 95381.doc -24- 1245436 位於下側的貫通孔，發光元件的電極與基體上面的配線導 體通過貫通孔而由導線電連接。因此，從發光元件發光的 直接光在比用來通過設於反射構件上的導線的貫通孔還上 側的位置上由反射面反射，可以有效地防止直接光進入貫 通孔内而被吸收，以提高輻射光強度。 此外’可以使發光元件的下面和反射構件的安放部完全 接合’可以將發光元件的熱良好地向反射構件傳遞，進一 步提局放熱性。 又’通過使陶瓷所含的晶粒的平均粒徑爲1〜5 μιη，提高 基體的反射率，從而可以有效抑制光從用來通過形成於反 射構件的引線的貫通孔漏出並被基體吸收。 根據本發明，在貫通孔的内部填充有含有絕緣性光反射 粒子的絕緣性膏，以便與反射構件的上側主面齊平面。因 此’即使從發光元件或螢光體發出的光進入貫通孔，也可 以有光反射離子向上側有效地反射，可以使發光裝置的輻 射強度或軸上光度或亮度、彩色再現性等光特性良好。 根據本發明，因爲照明裴置設置爲使所述本發明的發光 裝置成爲規定的配置，所以利用由半導體構成的發光元件 的電子再結合産生的發光，可以做成能夠比現有的利用放 電的照明裝置還低消耗電力且耐用的小型照明裝置。其結 果’可以抑制從發光元件産生的光的中心波長的變動，可 以以長期穩定的輻射光強度與輻射光角度（配光分佈）照射 光’並且可以做成抑制照射面中的顏色不均或照度分佈偏 離的照明裝置。 95381.doc -25 - 1245436 此外，通過在將本發明的發光裝置作爲光源設置爲規定 配置，並且在這些發光裝置的周圍設置光學設計爲任意$ 狀的反射工具或光學透鏡、光擴散板等，可以作成輻射任 意的配光分佈的光的照明裝置。 【實施方式】 以下參照附圖，詳細說明本發明的較佳實施例。 以下詳細說明本發明的發光元件收納用封裝（以下也稱 爲封裝）及發光裝置。圖1係表示本發明的第一實施方式的 發光裝置41的剖面圖。發光裝置41主要由基體42、框體43、 發光元件44和含有螢光體（圖中未示出）的透光性構件判構 成。此種發光裝置可以將從發光元件44發光的光輸出到 外部。 本發明的封裝備有：基體42、框體43、配線導體（圖中未 示出）和透光性構件45。基體42在上面形成發光元件44的安 放部42a，且由陶瓷構成。框體43以圍繞安放部42&的方式 接合在該基體42的上面外周部上，並且内周面作爲反射從 發光元件44發光的光的反射面。配線導體，一端形成於基 體42的上面上並與發光元件44的電極電連接，並且另一端 導出至基體42的側面或下面。透光性構件45設置爲在框體 43的内側覆蓋發光元件44，且含有將從發光元件料發光的 光進行波長變換的螢光體。 基體42由氧化鋁材質燒結體、氮化鋁材質燒結體、莫來 石材質燒結體或玻璃陶瓷等陶瓷組成的絕緣體構成，作爲 支撐發光元件44的支撐構件發揮作用，在其上面具有安放 95381.doc -26 - 1245436 發光元件44的安放部42a。 又，基體42的陶瓷的晶粒的平均粒徑爲}〜5 。由此， 由於晶粒成爲非常高的密度，故基體42表面的晶粒所占比 例增大，由於可以有效地抑制從晶粒間進入基體42内部的 光，基體42上面的反射率提高，故可以提高發光裝置“的 光輸出。 進而，基體42的上面的算術平均粗糙度成爲可以將從發 光元件44發光的光在基體42的上面向全方向反射的適度的 大小。其結果，由在框體43的内周面反射的光被激勵而發 光的螢光體的數量增加，可以提高發光裝置41的光輸出或 亮度、彩色再現性。 而且’在陶究的晶粒的平均粒徑比5 pm大的情況下，基 體42表面的晶粒所占比例減小，從晶粒間進入基體42内部 的光增加，基體42上面的反射率容易降低。其結果，從發 光元件44發光的光或從螢光體發光的光不能有效地被基體 42的上面反射，發光裝置41的光輸出容易降低。又，在陶 瓷的晶粒的平均粒徑比1 μΓη小的情況下，基體42上面的算 術平均粗糙度減小，從發光元件44發光的光在基體42的上 面容易正反射，難以向全方向反射。其結果，正反射方向 以外的螢光體難以被激勵，主要係位於正反射方向的螢光 體有助於波長變換，波長變換的效率降低，發光裝置41的 光輸出容易降低。 又’由於基體42的陶瓷的晶粒的平均粒徑爲}〜5 μηι，故 基體42的熱傳導性高的晶粒的密度升高，基體42的熱傳導 95381.doc -27- 1245436 率提高’發光元件44發出的熱能夠通過基體42而有效的輻 射到外部。因此，由於可以抑制起因於熱的發光元件44的 發光效率的降低’可以有效地抑制發光裝置4丨的光輸出的 降低。 在安放部42a上形成有用來電連接發光元件44的配線導 體（圖中未示出）。該配線導體借助於形成於基體42内部的配 線層（圖中未示出）而導出到發光裝置41的外表面，借助於焊 料材料或金屬制的導線等連接到外部電路基板上，電連接 發光元件44與外部電路。 將發光元件44連接到配線導體的方法有：使用借助於Au 線或A1線等導線連接的引線接合方式；或者將形成於發光 元件44下面的電極通過使用了 Au-錫（Sn)焊錫、Sn-Ag焊 錫、Sn-Ag-Cu焊錫或Sn-鉛（Pb)等的焊錫突起、或使用了 Au 或Ag等金屬的金屬突起構成的連接機構連接倒裝式接合方 式等方法。較佳者係利用倒裝式接合方式進行連接。由此， 由於可以將配線導體設置在基體42上面的發光元件44的正 下方’故沒有必要在基體42上面的發光元件44的外周部設 置配線導體的區域。由此，可以有效地抑制從發光元件44 發光的光被該基體42的配線導體區域吸收，以降低輻射的 光輸出。 配線導體由W、Mo、Mn、Cu或Ag等金屬粉末組成的金 屬化層構成，形成於基體42的表面或内部。或者，也可以 通過將Fe-Ni-Co合金等的管腳埋設在基體42中而形成。 又，也可以通過使由已形成配線導體的絕緣體構成的輸入 95381.doc -28- 1245436 輸出端子與設於基體42的貫通孔嵌入接合而設置。 此外，較佳者係以1〜20μιη的厚度使Ni或等耐腐蝕性 優越的金屬被覆在配線導體的露出表面上。由此，可以有 效地防止配線導體的氧化腐蝕，並且可以使發光元件4丄與 配線導體連接牢固。因此，較佳者係利用電解電鍍或無電 解電鍍法依次將例如厚度10 μηι左右的Ni電鍍層和厚度 〇·1〜3 μπι左右的Au電錢層被覆在配線導體的露出表面上。 又，利用焊錫或Ag焊料等焊料材料或者環氧樹脂等黏接 劑的接合材料，使框體43安裝在基體42的上面上。進而， 框體43形成有上側開口比下側開口還大的貫通孔43&，且在 内周面具有可以以高反射率反射從發光元件44發光的光的 反射面43b。形成此種内周面的方法，例如根據切削加工或 鑄模成型等，係用A卜Ag、An、白金（Pt)、鈦（Ti)、鉻（Cr) 或Cu等高反射率金屬形成框體43，利用電解研磨或化學研 磨等研磨加工將其内周面平滑化，以作爲反射面。又，也 可以用耐氣候性或耐濕性優越的Cu-W合金或sus(不銹鋼） 。金形成框體43，利用A卜Ag或Au等的金屬電鍍或者蒸鍍 等在該内周面上形成金屬薄膜。而且，在内周面由Ag*cu 等因氧化而容易變色的金屬構成的情況下，可以在其表面 上被覆從紫外區域到可見光區域透光率優越、低熔點玻 璃、溶膠-凝膠玻璃、矽樹脂或環氧樹脂，由此，可以使框 體43的内周面的耐腐蝕性、耐藥品性或耐氣候性提高。 又，較佳者係框體43的内周面的表面算術平均粗糙度Ra 爲0.1 μιη以下。由此，可以將從發光元件料發光的光良好 95381.doc -29- 1245436 地向發光裝置的上側反射。在Ra超過0· 1 μιη的情況下，難 以用框體43的内周面將從發光元件44發光的光良好地向發 光裝置的上側反射，並且在發光裝置4丨的内部容易漫反 射。其結果，發光裝置4 1内部的光的損耗易於增大，難以 用所希望的反射角度向發光裝置41的外部輻射光。 本發明的透光性構件45較佳者係由和發光元件44的折射 率差小、相對於從紫外區域到可見光區域的光透過率高的 材料構成。例如，透光性構件45由矽樹脂、環氧樹脂或尿 素樹脂等透明樹脂或者低熔點玻璃或溶膠-凝膠玻璃等構 成。由此，可以有效地抑制由發光元件44與透光性構件45 的折射率差導致光的反射損耗産生，可以提供以高效率和 所希望的輻射強度或角度分佈向發光裝置41的外部輻射光 的發光裝置41。又，此種透光性構件45由分配器等注入機 填充在框體43的内側並用烘烤爐等熱固化而形成，以便覆 蓋發光元件44。 此外’由於透光性構件4 5以任意比例配合、填充利用被 從發光元件44發光的光激勵的螢光體中的電子的再結合而 發光爲藍色、紅色、綠色或黃色等的無機類螢光體，故可 以輸出具有所希望的發光光譜和顏色的光。 又’較佳者係將透光性構件45設置爲其上面與發光元件 44的發光部46之間的距離成爲〇.1〜〇.8 mm。由此，在由發 光元件44的發光部46上側的恒定厚度的透光性構件45所含 的螢光體將從發光元件44發光的光高效地進行波長變化， 並且可以有效地抑制那些波長變換過的光被螢光體妨害， 95381.doc -30- 1245436 可以有效地向透光性構件45的外部輻射。其結果，在提高 t光4置41的光輸出，並且可以使亮度及彩色再現性等照 明特性良好。 而且’在發光元件44的發光部46與透光性構件45的上面 的門隔X(參照圖」）比0 8 mm長的情況下，榮光體中鄰近發 光凡件44的雖然可以良好地波長變換從發光元件44發光的 光，但難以有效地將該波長變換過的光放出到透光性構件 45的外部。即’通過由透光性構件45上面附近的螢光體妨 害波長變換過的光的進行，從而難以使光向外部的輻射良 好0 另一方面’在發光元件44的發光部46與透光性構件45的 表面的間隔比0·1 mm小的情況下，由從發光元件44發光的 光照射而激勵的螢光體的數量減少，難以有效地進行波長 變換。由此’沒有進行波長變換而透過透光性構件45的視 感性低的波長的光增多，難以使光輸出或亮度、彩色再現 性等照明特性良好。 此外’發光元件44，雖然輻射的能量的峰值波長可以是 從紫外線區域到紅外線區域的任一個，但從使白色光或各 種顏色的光視感性好地放出的觀點來看，較佳者係以從3〇〇 〜500 nm的近紫外系到藍色系發光的元件。例如，列舉在 藍寶石襯底上依次層疊了緩衝層、n型層、發光層及p型層 的、用GaN、GaAIN、InGaN或InGaAIN等氮化鎵系化合物 半導體或者碳化矽系化合物半導體或ZnSe(硒化鋅）等形成 了發光層的元件。 95381.doc 1245436 圖2係表示第二實施方式的發光裝置5〇的剖面圖。發光裝 置50主要由基體51、作爲框體的反射構件52、透光性構件 53、導體層57和凸部59構成。 本發明的發光το件收納用封裝備有基體5丨、框狀的反射 構件52和導體層57。基體51在上面的中央部上具有發光元 件55的安放部51a。反射構件52在基體51的上面的外周部上 包圍安放部51a而設置的。導體層57形成於安放部51&上。 發光元件55通過導電性黏接材料8，與導體層57電連接。導 體層57在比發光元件55的外周還位於外側的上面上形成有 凸部59。而且，在該封裝中設置配線導體。配線導體的一 端形成於基體51的上面上並與發光元件乃的電極電連接， 並且另一端向基體5 1的侧面或下面導出。即，配線導體的 一端作爲導體層57。 本發明的基體5 1由氧化鋁陶瓷或氮化鋁材質燒結體、莫 來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹脂構 成。基體51在上面具有安放發光元件55的安放部51&。又， 在基體51由陶瓷構成的情況下，與本發明的第一實施方式 同樣，陶瓷的晶粒的平均粒徑較佳者係爲丨〜5 。 在安放部51a上形成有在將發光元件55安放固定在基體 51上並且發光元件55電連接的導體層57。該導體層57通 過形成於基體51内部的配線層（圖中未示出）而向發光裝置 50的外表面導出。通過使該發光裝置5〇外表面的導出部與 外部電路基板連接，從而發光元件55與外部電路電連接。 在基體51由陶瓷構成的情況下，以高溫燒結成爲導體層 95381.doc -32- 1245436 57的由W、Mo-Mn、Cu、Ag等構成的金屬膏而在基體51上 面上形成導體層57。又，在基體51由樹脂構成的情況下， 鑄模成型Cu或Fe-Ni合金等構成的管腳並設置固定在基體 5 1的内部。 凸部59在導體層57上設於比發光元件55的外周還位於内 側的上面。凸部59可以是導電性材料，也可以是絕緣性材 料。在凸部59由絕緣性的陶瓷構成的情況下，例如通過印 刷塗敷以形成基體51的材料爲主要成分的陶瓷膏，與成爲 導體層57的同時在高溫燒結而形成。又，在基體51由樹脂 構成的情況下，例如凸部59由和基體5 1相同的材質構成， 與基體5 1同時利用模具成型形成。 又’在凸部5 9爲導電性材料的情況下，可以通過在導體 層5 7的上面印刷塗敷金屬膏並燒結，或者通過用切削加工 等在管腳上設置突出部，而做成。 如此，導體層57在比發光元件55的外周還位於内側的上 面上形成有凸部59。因此，由凸部59將發光元件55提升得 比導體層57還上側，可以在發光元件55的下面與導體層57 的上面之間可靠地設置間隙。由此，可以防止導電性黏接 材料58由發光元件55的重量而被壓漏出，漏出導體層57而 擴散’可以將導電性黏接材料5 8均勻地形成於導體層5 7 上，使發光元件55水平地安放在導體層57上。其結果，可 以使可從發光元件55以所希望的射出角度發光、從發光元 件5 5發光的光由反射構件52以所希望的輻射角度反射，並 向外部射出，而從發光裝置發光的光的輻射強度增強。 95381.doc -33- 1245436 又’通過可以將導電性黏接材料58均勻地形成於導體層 57上，使發光元件55水平地安放在導體層57上，從而也能 夠使從發光元件55産生的熱經由導電性黏接材料5 8及基體 51而有效地輻射到外部。其結果，可以將發光元件55的溫 度一直保持穩定，將從發光元件55發光的光的輻射強度在 高的狀態下保持穩定。 此外，可以有效地防止導電性黏接材料58流出到比發光 το件55的外周還外侧的位置，而保持在發光元件55的下 側’可以有效地防止從發光元件55發光的光被流出到比發 光元件55的外周還外側的位置的導電性黏接材料58所吸 收。其結果，可以提供輻射強度高且亮度或彩色再現性等 光特性優越的發光裝置5〇。 凸部59的高度較佳者係爲〇·〇1〜〇1 mm。由此，在發光 元件55與導體層57之間可以形成導電性黏接材料58的良好 的彎液面，可以更有效地防止導電性黏接材料58的流出， 並且，可以進一步提高發光元件55與導體層57的接合強度。 在圖3A及圖3B中示出導體層57及凸部59的放大平面 圖。如圖3A所示，在比發光元件55的外周還位於内側的導 體層57的上面設有多個例如半球狀的凸部59。又，如圖3b 所不，可以在比發光凡件55的外周還位於内側的導體層57 的上面設置多個長方形狀的凸部59，以使其與發光元件Μ 的外周平行。如圖3Α及3Β所示，通過設置多個凸部59，從 而可以可罪地在發光元件55的下面與導體層57的上面之間 设置間隙，纟導體層57的上面與發光元件55的下面之間形 95381.doc -34- 1245436 成良好的導電性黏接材料58的彎液面。在這裏以使發光 元件55相對於導體層57水平安放，平衡良好地設置凸^59 係重要的。W匕，通過在導體層57上設置具有比發光元件 55的下面的面積還小的面積的凸部，從而即使經由導電性 黏接材料58接合導體層57與發光元件55的下面，也可以防 止用來將發光元件55接合固定在導體層57上的導電性黏接 材料58漏出導體層57並擴散，在安放部5丨3上可以使導電性 黏接材料均勻擴散，可以將發光元件55水平地安放在安放 部5 1 a上。 發光元件55，設於其下面的電極通過八§膏、金（Au)_錫 (Sn)焊錫等導電性黏接材料58進行連接。 而且’導體層57較佳者係在其露出的表面上以1〜2〇 左右的厚度被覆Ni或Au等耐腐#性優越的金屬就可以。由 此，可以有效地防止導體層57的氧化腐蝕，並且，可以使 發光元件55與導體層57的連接牢固。因此，較佳者係在導 體層57的露出表面上，利用電解電鍍或無電解電鍍法依次 被覆有例如厚度1〜10 μπι左右的Ni電鍍層和厚度爲〇1〜3 μηι左右的Au電鍍層。 又，利用焊錫、Ag焊料等焊料材料或環氧樹脂等黏接劑 等的接合材料，將反射構件52安裝在基體51的上面。反射 構件52在中央部上形成有貫通孔52a。較佳者係將貫通孔 52a的内周面作爲有效地反射發光元件55及螢光體發出的 光的反射面52b。 反射面52b係通過對反射構件52進行切削加工或模具成 95381.doc -35- 1245436 型、研磨加工等，做成光反射效率高的平滑面而形成的。 或者’可以通過例如利用電鍍或蒸鍍等在貫通孔52a的内周 面上形成Al、Ag、Au、白金（Pt)、鈦（Ti)、鉻（C〇、Cu等高 反射率的金屬薄膜而形成反射面52b。而且，在反射面52b 由Ag或Cu等因氧化而容易變色的金屬構成的情況下，較佳 者係利用電解電鍍或無電解電鍍法在其表面上依次被覆有 例如厚度1〜10 左右的Ni電鍍層和厚度爲0·ι〜3 μηι左 右的Au電鍍層。由此，可以提高反射面52b的耐腐餘性。 此外’較佳者係反射面52b表面的算術平均粗糙度Ra爲 0·004〜4 μπι ’由此’可以使反射面良好地反射發光元件55 及螢光體的光。若Ra超過4 μιη，則難以使發光元件5 5的光 均勻地反射，在發光裝置的内部容易産生漫反射。另一方 面，在不足0.004 μιη時，有難以穩定且有效地形成此種面 的傾向。 又’反射面52b，例如其縱剖面形狀可以列舉伴隨朝向上 側而向外侧擴張的如圖2所示的直線狀傾斜面、伴隨朝向上 側而向外側擴張的曲面狀傾斜面或矩形的面等形狀。 如此’本發明的發光元件收納用封裝通過將發光元件5 5 安放在安放部51a上，並且通過導電性黏接材料58，與導體 層57電連接，用透光性構件53覆蓋發光元件55，從而形成 發光裝置50。 本發明的透光性構件53由環氧樹脂或矽樹脂等透明樹脂 構成。透光性構件53用分配器等注入機填充在反射構件52 的内側，用烘烤爐等進行熱固化，以便覆蓋發光元件5 5。 95381.doc -36 - 1245436 而且，透光性構件53也可以含有可將發光元件55的光進 行波長變換的螢光體。 又透光性構件5 3的上面’如圖2所示，較佳者係在其上 形成凸的形狀。由此，可以使從發光元件55向各種方向發 光的光透過透光性構件53的光路長近似’可以有效抑制輻 射強度的不均的産生。 圖4係表示本發明的第三實施方式的發光裝置6〇的剖面 圖。發光裝置60主要由基體61、作爲框體的反射構件62、 含有螢光體64的透光性構件63構成。發光裝置6〇可以使發 馨 光元件65的發光具有方向性而向外部發光。 本發明中的基體61，由氧化鋁陶瓷、氮化鋁材質燒結體、 莫來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹脂 構成。又，基體61在其上面具有安放發光元件65、從上面 突出的安放部61a。又，在基體61由陶瓷構成的情況下，與 上述實施方式同樣，較佳者係陶瓷的晶粒的平均粒徑爲工 〜5 μηι。 此種安放部61a，在基體61的上面，可以通過利用焊料材鲁 料或黏接劑等接合材料而將由氧化鋁陶瓷、氮化鋁材質燒 結體、莫來石材質燒結體、玻璃陶竟等陶:是、Fe_Ni_c〇合 金或Cu-W等金屬或者環氧樹脂等樹脂構成的凸部6丨b安裝 在基體61的上面，或者也可以在基體61上面將凸部6ib與基 體61作爲-體而形成。χ ’可以通過在設於基體“的中央 · ^的貝通孔中嵌入安裝上述陶究、金屬或樹脂構成的凸部 61b而設置，以使其上側從基體61的上面突出。 95381.doc •37- 1245436 較佳者係凸部61b與基體61爲相同材質。由此，可以減小 安放部61a和基體61的熱膨脹差，可以有效地抑制在安放部 6 1 a上産生變形，發光元件65的位置偏離，發光效率降低。 更佳者係將凸部61b與基體61做成一體。由此，由於沒有 必要在凸部61b與基體61之間介入接合材料，故可以將從發 光元件65産生的熱極爲良好地輻射到基體6 i。 在凸部61b與基體1成爲一體的情況下，例如可以通過將 成爲凸部61b或基體61的陶瓷生片（未燒結的）層疊，並且進 行燒結，並利用切削加工等金屬加工方法，或者通過以注 塑成型等將樹脂鑄模成型而進行製作。 又，如圖5的本發明的第四實施方式的發光裝置6〇a所 示，凸部61b可以傾斜爲伴隨側面朝向基體61側而向外側擴 張。由此，在可以使從發光元件65產生的熱的擴散性提高， 並且，可以利用突出的安放部61a的側面使光有效地向上方 反射。其結果，可以提高發光元件65的發光效率及螢光體 64的波長變換的效率，並且可以使從發光元件^或螢光體 64發出的光有效地反射到上方，能夠長期以高輻射強度輸 出光。 在安放部61a上形成有用來電連接發光元件“的作爲配 線導體的電連接用圖案（圖中未示出該電連接用圖案通過 形成於基體61内部的配線層（圖中未示出）而導出到發光裝 置的外表面，與外部電路基板連接。由此，發光元件㈣ 外部電路可以電連接。 將發光元件65連接在電連接用圖案上的方法，有採用通 95381.doc -38- 1245436 過引線接合進行連接的方法或者利用了在發光元件65的下 面通過焊锡突起等電極66而進行連接的倒裝式接合方式的 方法等。較佳者係利用倒裝式接合方式進行連接。由此， 由於可以將電連接用圖案設於發光元件65的正下方，故沒 有必要在發光元件65外周的基體61的上面設置用來設置電 連接用圖案的f。由此，可以有效地抑制從發光元件65發 光的光被該基體61的電連接用圖案用的膏吸收而導致轴上 光度降低。 該電連接用圖案可以通過在基體61的表面或内部形成例 如冒、1^〇、（：11、八§等金屬粉末的金屬化層，通過在基體61 中埋設Fe-Ni-Co合金等管腳，或者通過使形成了配線導體 的絕緣體構成的輸入輸出端子與設於基體61上的貫通孔嵌 入接合而進行設置。 而且’較佳者係使Ni或金（Au)等耐腐蝕性優越的金屬以1 〜20 μιη的厚度被覆在露出電連接用圖案的表面上，可以有 效地防止電連接用圖案的氧化腐餘，可以使發光元件6 $與 電連接用圖案的連接牢固。因此，更佳者係利用電解電錢 或無電解電鍍法在電連接用圖案的表面上依次被覆有例如 厚度1〜10 μηι左右的Ni電鍍層和厚度爲〇·1〜3 μπι左右的 Au電鍍層。 又，與本發明的第二實施方式同樣，利用焊錫、Ag焊料 等焊料材料或環氧樹脂等粘接劑等的接合材料將反射構件 62安裝在基體61的上面。反射構件62在中央部上形成有貫 通孔62a，並且將内周面作爲反射發光元件65發光的光的反 95381.doc -39- 1245436 射面62b。 反射面62b係與本發明的第二實施方式同樣地形成，省略 說明。 此外，反射面62b表面的算術平均粗糙度尺&與本發明第二 實施方式同樣，較佳者係爲〇·_〜4μηι。由此，反射面咖 可以使發光元件65及螢光體64的光良好地反射。 反射面62b，其縱剖面形狀例如可以列舉出伴隨朝向上側 而向外側擴張的圖4〜圖6所示的本發明的第三〜第五實施 方式的發光裝置60、60A、60B的直線狀傾斜面、伴隨朝向 _ 上側而向外側擴張的曲面狀傾斜面或如圖7所示的本發明 的第六實施方式的發光裝置6〇C的矩形的面等形狀。 反射構件62雖然可以安裝在基體61上面的凸部61b以外 的任何部位上，但較佳者係安裝在發光元件65的周圍，以 便以所希望的面精度例如在發光裝置的縱剖面中，將發光 元件65夾持於其間且設於發光元件65兩側的反射面621)成 爲對稱的狀態下設置反射面62b。由此，不僅用螢光體對來 $ 自發光元件6 5的光進行波長變換並直接輻射到外部，而且 可以用反射面62b均勻無偏差地使從發光元件65向橫向等 發光的光及從螢光體64向下側放出的光反射，可以有效地 使軸上光度及亮度甚至彩色再現性等提高。 尤其如圖6所示，反射構件62越接近凸部61b，上述效果 - 越顯著。由此，通過用反射構件62包圍具有安放部61 a的凸 . 部6lb的周圍，從而可以使更多的光反射，能夠得到更高的 軸上光度。 95381.doc -40- 1245436 此外，安放在安放部61a上的發光元件65的發光部69設置 爲位於比反射面62b的下端62c還高的位置上。即，從發光 元件65的發光部69的基體61的上面開始的高度比貫通孔 62a的下側開口部周圍的反射構件62的厚度L還大。由此， 可以有效地防止由反射構件62的加工時在反射面62b的下 端62c上層産生的變化等及將反射構件62接合在基體61上 時漏出的焊料材料導致漫反射發光元件65發光的光。與此 並且，可以將發光元件65發光的光照射到透光性構件63的 表面附近多量的螢光體64，可以使波長變換效率非常良好。 本發明的透光性構件63，由含有可以將來自發光元件65 的光進行波長變換的螢光體64的環氧樹脂或矽樹脂等透明 樹脂構成。透光性構件63被用分配器等注入機填充在反射 構件62的内側，並用烘烤爐等進行熱固化，以便覆蓋發光 元件65。由螢光體64對來自發光元件65的光進行波長變 換，可以取出具有所希望的波長光譜的光。 此外’透光性構件63設置爲其上面與發光元件65的發光 部的間隔X爲0.1〜〇_5 mm。由此，利用發光元件65的發光 部69上側的恒定厚度的透光性構件63所含的螢光體，可以 高效地對從發光元件65發出的光進行波長變換，那些進行 過波長變換的光不會被螢光體64妨害，而可以直接放出到 透光性構件63的外部。其結果，可以提高發光裝置的輻射 強度，可以使軸上光度或亮度、彩色再現性等光特性良好。 如圖8所示，在發光元件65的發光部69與透光性構件〇 的表面的間隔X比〇·5 mm大時，螢光體64中、鄰近發光元件 95381.doc -41 - 1245436 65的螢光體（用斜線表示的螢光體64)雖然可以直接激勵發 光元件65的光並進行波長變換，但難以向透光性構件〇的 外部直接放出該進行過波長變換的光。即，通過由透光性 構件63表面附近的螢光體64(圖8的斜線部以外的螢光體64) 妨害光的進行，從而難以使向外部的軸上光度良好。 另一方面，如圖9所示，在發光元件65的發光部的與透光 性構件63的表面的間隔X比ο·! mm小時，難以有效地對發光 元件65的光進行波長變換。因此，沒有進行波長變換而透 過透光性構件63的視感性低的波長的光增多，難以使軸上 光度或亮度、彩色再現性等光特性良好。 如圖10的本發明的第七實施方式的發光裝置6〇D所示，透 光性構件6 3較佳者係其表面的算術平均粗縫度在中央部比 外周部還大。由此，可以抑制由透光性構件63的中央部和 外周部射出的光的輻射強度的差。即，利用透光性構件63 表面的中央部的粗糙面67，使從發光元件65發光、不會被 反射構件62等反射而直接從透光性構件63表面的中央部輕 射的強度大的光適度地散射，將光強度減弱一些。由此， 可以使光強度被減弱的從透光性構件63表面的中央部輻射 的光近似於強度減小的、從透光性構件63表面的外周部輻 射的光的強度，可以縮小透光性構件63的中央部與外周部 的輻射強度的差。其結果，發光裝置可以在寬範圍内輻射 一樣的光，並且可以抑制由於輻射強度集中在發光面的一 部分而産生的、給予人眼強烈刺激的眩光的現象，可以抑 制對人眼的不良影響。 95381.doc # -42- 1245436 、光丨構件63表面的算術平均粗糖度可以係中央部爲 μηΐ以上，外周部爲〇 · 1 μπι以下。由此，可以使透光性 構件63表面中的輻射強度進一步無偏差地均勻，也可以使 輻射強度良好。 而且，在從中央部到外周部由平滑面構成透光性構件63 的情況下，由於在中央部縮短從發光元件65到透光性構件 63的距離，故傳播損耗也減少，輻射強度強。與此相對， 由於在透光性構件63的外周部用反射構件62反射發光元件 65的光並向發光裝置的外部射出，故光路長變長，由反射 構件62的反射損耗導致輻射強度較小。其結果，在透光性 構件63的中央部和外周部，在光強度上産生大的差，産生 從發光裝置射出的光的顏色不均或照射面中的照度分佈不 均。與此相對，通過使透光性構件63的表面的算術平均粗 縫度在中央部比外周部大，故可以有效地防止從發光裝置 射出的光的顏色不均或照射面中的照度分佈不均的產生。 此種粗糙面67例如可以通過用金屬膜包覆透光性構件63 的表面的外周部，從發光裝置的上侧噴射陶瓷等粉末體並 進行粗化而形成。 又’透光性構件63的上面，如圖4所示可以在其上做成凸 的形狀。由此，即使對於從發光元件65向斜上方放出的光， 也可以使發光部69與透光性構件63的表面的間隔爲〇1〜 0.5 mm，可以進一步提高輻射強度。 圖11係表示本發明的第八實施方式的發光裝置7〇的剖面 圖。發光裝置70主要由基體71、作爲框體的反射構件72、 95381.doc -43- 1245436 透光性構件73、導體層77和凸部79構成。 本發明的發光元件收納用封裝備有：基體71、框狀的反 射構件72和導體層77。基體71在上面的中央部上具有發光 凡件75的安放部71a。反射構件72係以包圍安放部71a之方 式設置在基體71的上面的外周部上。導體層77形成於安放 部7 la上。發光元件75經由導電性粘接材料8而與導體層77 電連接。在其導體層77的周圍形成有由絕緣體構成的凸部 79。而且，在該封裝中設置配線導體。配線導體的一端形 成於基體71的上面並與發光元件75的電極電連接，並且另 一端導出到基體71的側面或下面。即，配線導體的一端成 爲導體層77。 本發明中的基體71由氧化鋁陶瓷、氮化鋁材質燒結體、 莫來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹脂 構成。又，基體71在其上面具有安放發光元件5的安放部 81a。又’在基體71由陶瓷構成的情況下，與上述實施方式 同樣’較佳者係陶瓷的晶粒的平均粒徑爲1〜5 μιη。 在安放部71 a上，形成有將發光元件75安放固定在基體71 上’並且，發光元件75電連接的導體層77。該導體層77通 過形成於基體71内部的配線導體（圖中未示出）而導出至發 光裝置70的外表面。通過將該發光裝置70的外表面的導出 部連接在外部電路基板上，從而電連接發光元件7 5和外部 電路。 導體層77在基體71由陶瓷構成的情況下，在基體71的上 面以高溫燒結成爲導體層77的由W、Mo-Mn、Cu、Ag等構 95381.doc -44- 1245436 :的金屬膏而形成。又，在基體71由樹脂構成的情況下， 鑄模成型由Cu或Fe.Ni合金等構成的管腳並設置固定在基 體7 1的内部。 土 >凸部79形成於導體層77的周圍。在基體乃由陶竟構成的 ί月況下，例如凸部79通過印刷塗敷以形成基體Μ的材料爲 成刀的陶瓷膏，與成爲導體層的金屬膏並且在高溫^ 燒結而形成。在基體71由樹脂構成的情況下，例如凸部79 由與基體71相同的材f構成，與基體71並且利用模具成型 來形成。而且，凸部79可以係與基體71相同的材料，亦可 以不同。 由於在此種導體層77的周圍形成有由絕緣體構成的凸部 故利用凸部79可以防止導電性黏接材料78漏出導體層 77。可以使導電性黏接材料78的厚度均勻，使發光元件75 水平地安放在導體層77上。其結果，可以從發光元件乃以 所希望的射出角度發光，並可以以所希望的輻射角度反射 仗發光το件75發光的光並輻射到外部，可以使從發光元件 7 5發光的光的輻射強度增強。 又，通過可以使發光元件75水平地安放在導體層77上， 從而也能使從發光元件75産生的熱無偏差地均勻地經由導 電性黏接材料78及基體71而有效地輻射到外部。其結果， 可以將發光το件75的溫度一直維持爲穩定，可以在高的狀 態下穩定地維持從發光元件75發出的光。 進而，可以有效地防止從發光元件乃發光的光由凸部79 反射到導電性黏接材料78上，可以有效地防止從發光裝置 95381.doc -45- 1245436 輻射的光被導電性黏接材料78吸收而產生輻射強度降低、 党度或彩色再現性降低。如此，可以提供輕射強度高且發 光特性優越的發光裝置。 又，凸部79可以覆蓋導體層77的外周部，亦可以不覆蓋。 又，凸部79在導體層77爲多個的情況下，如圖12A所示，在 各導體層77的周圍可以形成於整周，亦可以如圖12B所示只 在多個導體層77的集合體的周圍形成。 又，如圖13A所示，導體層77,其露出部可以比發光元件 75的外周還位於外側，較佳者係如圖nB所示，導體層 的露出的部位比發光元件75的外周還位於内側。由此，可 以防止用來接合導體層77和發光元件75的導電性黏接材料 78從導體層77與發光元件75之間露出，可以極有效地防止 從發光元件75發光的光照射到導電性黏接材料78上。其結 果，可以防止從發光元件75發光的光被導電性黏接材料78 吸收或作爲輻射強度低的光反射，可以使從發光裝置發光 的光的輻射強度成爲高狀態，並且可以使亮度或彩色再現 性優越。 又，即使從發光元件75發光的光爲紫外光，導電性黏接 材料78亦不會劣化，可以使導體層77與發光元件75的接合 強度始終很高，可以長期牢固地將發光元件75固定在導體 層77上。其結果，可以使發光元件75的電極76與導體層 的電連接長期可靠，可以使發光裝置耐用。 此外，較佳者係凸部79的側面傾斜爲伴隨朝向基體71側 而向外側擴展。通過如此地構成，凸部79的側面與基體71 95381.doc -46- 1245436 的上面的角落部的空氣容易跑出，可以防止空氣進入該角 落部’可以有效地防止在導電性黏接材料78及透光性構件 73上産生空隙，由於溫度變化等導致空隙中的空氣膨脹而 產生剝離或裂紋。又，用凸部79外側的傾斜的侧面可以使 光良好地反射到上側，可以提高發光效率。 較佳者係凸部79相對從發光元件75及透光性構件73所含 有的螢光體發出的光的反射率爲60%以上。根據該構成， 可以更有效地防止從發光元件75或螢光體發出的光被凸部 79吸收或作爲輻射強度低的光反射，可以使從發光裝置發 光的光的輪射強度極高。若凸部79的光的反射率不足 60% ’則從發光元件75或螢光體發光的光被凸部79吸收的 量增加，從發光裝置發光的光的輻射強度容易降低。 發光元件75之設於其下面的電極76係通過Ag膏、金（Au)· 錫（Sn)焊錫等導電性黏接材料78被連接。 而且’與本發明的第二實施方式同樣，導體層π較佳者 係以1〜20 μιη左右的厚度將犯或八1|等耐腐蝕性優越的金屬 被覆在其露出的表面上。 又，利用焊錫或Ag焊料等焊料材料、環氧樹脂等黏接劑 的接合材料將反射構件72安裝在基體71的上面。反射構件 72在中央部形成有貫通孔72a。較佳者係貫通孔的内周 面作爲有效反射發光元件75及螢光體發出的光的反射面 72b 〇 反射面72b係與本發明的第二實施方式同樣，省略說明。 又，反射面72b表面算術平均粗糙度“與本發明的第二 95381.doc -47- 1245436 貫施方式同樣，可以爲〇·0〇4〜4 μηι，由此，反射面72b可 以將發光元件75及螢光體的光良好地反射。 又，反射面72b，例如其縱剖面形狀可以列舉伴隨朝向上 側而向外側擴張的圖11所示的直線狀傾斜面、伴隨朝向上 側而向外側擴張的曲面狀傾斜面或矩形的面等形狀。 如此，本發明的發光元件收納用封裝通過在將發光元件 安放在安放部71a上，並且，通過導電性黏接材料乃而與導 體層77電連接，並用透光性構件73覆蓋發光元件乃，而形 成發光裝置70。 本發明的透光性構件73由環氧樹脂或矽樹脂等透明樹脂 構成。透光性構件73係用分配器等注入機填充到反射構件 72的内側，並用烘烤爐等進行熱固化，以便覆蓋發光元件 75 〇 而且，透光性構件73可以含有可將發光元件75的光進行 波長變換的螢光體。 又’透光性構件73的上面可以如圖11所示，較佳者係在 其上形成凸的形狀。由此，可以使從發光元件75向各種方 向發光的光近似於透過透光性構件73的光路長，可以有效 抑制輻射強度的不均産生。 圖14係表示本發明的第九實施方式的發光裝置8〇的剖面 圖。發光裝置80主要由基體81、作爲框體的反射構件82、 透光性構件83、導體層87和凸部89構成。 本發明的發光元件收納用封裝備有：基體81、框狀的反 射構件82和導體層87。基體81在從上面突出的突出部81b 95381.doc -48· 1245436 上具有發光元件85的安放部8 1 a。反射構件82以圍繞安放部 81a的方式接合在基體81的上面，内周面作爲反射發光元件 85發光的光的反射面82b。導體層87形成於安放部8la的上 面。發光元件85通過導電性黏接材料88而電連接導體層 87。導體層87的周圍被由絕緣體構成的凸部89包圍。而且， 在該封裝中設置配線導體。配線導體的一端形成於基體8 i 的上面’並與發光元件85的電極電連接，並且另一端向基 體8 1的側面或下面導出。即，配線導體的一端成爲導體層 87 〇 由此’可以使反射構件82的反射面82a良好地反射從發光 元件S5的側面命横向及斜下方發i輪 件82與基體81的接合部或基體81的表面吸收，可以以所希 望的輪射角度用反射構件82反射並良好地輻射到外部。其 結果，可以提高從發光裝置80發光的光的輻射強度並穩定 地保持。 又’由於形成有突出部8 lb，以使安放部8 1 a從基體8 1的 上面離開，故可以使安放部8 ia與反射構件82的下端可靠地 絕緣。因此，從平面看，可以使反射構件82的下端更接近 安放部81a，可以用反射構件82的反射面更良好地反射從發 光元件85發光的光。 又，可以利用由絕緣體構成的凸部89，防止導電性黏接 材料88從導體層87漏出，可以使導電性黏接材料88的厚度 勻勻，可以使發光元件85水平地安放在導體層87上。其結 果，可以以所希望的輻射角度從發光元件85發光，可以用 95381.doc 1245436 反射構件82以所希望的輻射角度反射從發光元件85發光的 光並輻射到外部，可以使從發光裝置發光的光的輻射強度 增強。 此外通過可以使發光元件8 5水平地安放在導體層8 7 上從而也此使從發光元件85産生的熱無偏差且均勻地經 由導電性黏接材料88及基體81而有效地輻射到外部。其結 果可以穩疋地維持發光元件8 5的溫度，可以在高的狀態 下穩定地維持從發光元件85發光的光。 進而，可以有效地防止從發光元件85發光的光由凸部89 照射到導電性黏接材料88上，可以有效地防止從發光裝置 幸田射的光被導電性黏接材料吸收而産生的輻射強度的降 低、冗度或彩色再現性的降低。如此，可以提供輻射強度 高且發光特性優越的發光裝置。 本發明中的基體8 1由氧化鋁陶瓷、氮化鋁材質燒結體、 莫來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹脂 構成。又，基體81在從上面突出的突出部81b上具有安放發 光το件85的安放部81a。又，在基體81由陶瓷構成的情況 下，與上述實施方式同樣，較佳者係陶瓷的晶粒的平均粒 徑爲1〜5 μιη。 突出部81b可以與基體81成爲一體。此種情況下，可以利 用公知的陶瓷生片層疊法或切削加工、模具成型等來形成。 此外，至於突出部81b，可以利用釺焊或黏接劑將立方體 狀的突出部81b接合在基體81的上面。關於此種突出部 8 lb，可以列舉出陶瓷或樹脂、玻璃、無機晶體、金屬等。 95381.doc -50- 1245436 在安放部81a上形成有將發光元件85安放固定在基體“ 上，並且電連接發光元件85的導體層87。該導體層87通過 形成於基體81内部的配線導體（圖中未示出）而導出到發光 裝置80的外表面。通過使該發光裝置的外表面的導出部 與外部電路基板連接，從而使發光元件8 5與外部電路電連 接。 導體層8 7在基體81由陶瓷構成的情況下，在基體81的上 面以高溫燒結成爲導體層87的由W、Mo-Mn、Cu、Ag等構 成的金屬膏而形成。又，在基體81由樹脂構成的情況下， 鑄模成型由Cu或Fe-Ni合金等構成的管腳並設置固定在基 體8 1的内部。 凸部89形成於導體層87的周圍。在基體81由陶瓷構成的 情況下，例如凸部89通過印刷塗敷以形成基體8丨的材料爲 主要成分的陶瓷膏，與成爲導體層87的金屬膏並且在高溫 下燒結而形成。在基體81由樹脂構成的情況下，例如凸部 89由與基體81相同的材質構成，與基體81並且利用模具成 型來形成。而且，凸部89可以係與基體8丨相同的材料，也 可以不同。 如此，由於在導體層87的周圍形成有由絕緣體構成的凸 部89，故利用凸部89可以防止導電性黏接材料88漏出導體 層8 7，可以使導電性黏接材料8 8的厚度均勻，使發光元件 85水平地安放在導體層87上。其結果，可以從發光元件85 以所希望的射出角度發光，並可以以所希望的輻射角度反 射從發光元件8 5發光的光並輻射到外部，可以使從發光裝 95381.doc 51 1245436 置發光的光的輻射強度增強。 又，通過可以使發光元件85水平地安放在導體層87上， 從而也能使從發光元件85産生的熱無偏差地均勻地經由導 電性黏接材料88及基體81而有效地輻射到外部。其結果， 可以將發光元件85的溫度一直維持爲穩定，可以在高的狀 態下穩定地維持從發光元件85發出的光。 進而，可以有效地防止從發光元件85發光的光由凸部89 照射到導電性黏接材料88上，可以有效地防止從發光裝置 幸田射的光被導電性黏接材料88吸收而產生輻射強度降低、 焭度或彩色再現性降低。如此，可以提供輻射強度高且發 光特性優越的發光裝置。 又’凸部89可以覆蓋導體層87的外周部，也可以不覆蓋。 此外，凸部89在導體層87爲多個的情況下，如圖15A所示， 在各導體層87的周圍可以形成於整周，也可以如圖丨5B所示 只在多個導體層87的集合體的周圍形成。 又’如圖1 6A所示，導體層87，其露出部可以比發光元件 85的外周還位於外側，較佳者係如圖16B所示，導體層87 的露出的部位比發光元件85的外周還位於内側。由此，可 以防止用來接合導體層87和發光元件85的導電性黏接材料 88從導體層87與發光元件85之間露出，可以極有效地防止 從發光元件85發光的光照射到導電性黏接材料88上。其結 果可以防止從發光元件85發光的光被導電性黏接材料88 吸收或作爲輻射強度低的光反射，可以使從發光裝置發光 勺光的幸田射強度成爲向狀態，並且可以使亮度或彩色再現 95381.doc -52- 1245436 (•生k越χ通過構成爲導體層8 7的漏出部位比發光元件 85的外周還位於内側的結構’從而作爲縮小安放部的結 構，可以與其配合而進一步小型化反射構件以，並且基體 8 1也可以與反射構件82 g己合而小型化’可以使發光元件收 納用封裝整體進一步小型化。 又，即使從發光it件85發光的光爲紫外光，導電性黏接 材料8也不曰劣化，可以使導體層87與發光元件μ的接合 強度直同，可以長期牢固地將發光元件85固定在導體層 87上其結果，可以使發光元件85的電極86與導體層87的 電連接長期可靠，可以使發光裝置壽命長。 此外，杈佳者係凸部89的側面傾斜爲伴隨朝向基體“側 而向外側擴展。通過如此地構成，凸部89的側面與基體Η 的上面的角洛部的空氣容易跑出，可以防止空氣進入該角 落部，可以有效地防止在導電性黏接材料88及透光性構件 83上産生空隙，由於溫度變化等導致空隙中的空氣膨脹而 産生剝離或裂紋。χ ’用凸部89外側的傾斜的側面可以使 光良好地反射到上側，可以提高發光效率。 本I明的第八實施方式同樣，較佳者係凸部89相對於 從發光元件85及透光性構件83所含有的榮光體發出的光的 反射率爲60%以上。 發光元件85，設於其下面的電極％通過八§膏、金（Au)一 锡（Sn)焊錫等導電性黏接材料⑽連接。 ^而且，與本發明的第二實施方式同樣，導體層87較佳者 二、20 μηι左右的厚度將见或Au等耐腐蝕性優越的金屬 95381.doc •53- 1245436 被覆在其露出的表面上。 又，利用焊錫或Ag焊料等焊料材料、環氧樹脂等黏接劑 的接合材料將反射構件82安裝在基體81的上面。反射構件 82在中央部形成有貫通孔82a。較佳者係貫通孔“a的内周 面作爲有效反射發光元件85及螢光體發出的光的反射面 82b 〇 反射面82b與本發明的第二實施方式同樣形成，省略其說 明。 此外，反射面82b表面的算術平均粗糙度Ra與本發明的第 二實施方式同樣，可以爲0·004〜4 μιη，由此，反射面82b 可以將發光元件85及螢光體的光良好地反射。 又，反射面82b，例如其縱剖面形狀可以列舉伴隨朝向上 側而向外側擴張的如圖14所示的直線狀傾斜面、伴隨朝向 上側而向外側擴張的曲面狀傾斜面或矩形的面等形狀。 如此，本發明的發光元件收納用封裝通過在將發光元件 85安放在安放部8 la上，並且，通過導電性黏接材料88而與 導體層87電連接，並用透光性構件83覆蓋發光元件85，從 而形成發光裝置80。 本發明的透光性構件83由環氧樹脂或矽樹脂等透明樹脂 構成。透光性構件83係用分配器等注入機填充到反射構件 82的内側，並用烘烤爐等進行熱固化，以便覆蓋發光元件 85 〇 而且，透光性構件83可以含有可將發光元件85的光進行 波長變換的螢光體。 95381.doc -54- 1245436 又，透光性構件83的上面可以如圖14所示，在其上形成 凸的形狀。由此，可以使從發光元件85向各種方向發光的 光近似於透過透光性構件83的光路長，可以有效抑制輻射 強度的不均産生。 圖17係表示本發明的第十實施方式的發光裝置9〇的剖面 圖。發光裝置90主要由基體91、反射構件92、含有螢光體 94的透光性構件93和發光元件95構成。該發光裝置9〇可以 使發光元件95的發光具有方向性而向外部發光。 本發明中的基體91由氧化鋁陶瓷、氮化鋁材質燒結體、 莫來石材質燒結體或玻璃陶瓷等陶瓷或者環氧樹脂等樹 脂、或者由Fe-Co合金，Cu-W，A1等的金屬構成。又，基 體91具有在上側主面上安放固定具有安放發光元件％的安 放部92d的反射構件92的功能。又，在基體91由陶瓷構成的 情況下，與上述實施方式同樣，較佳者係陶瓷的晶粒的平 均粒徑爲1〜5 μιη。 利用焊錫、Ag焊料等焊料材料或環氧樹脂等黏接劑等的 接合材料將反射構件92安裝在基體91的上面。在反射構件 92上，在上側主面的中央部上形成發光元件95被安放在上 面的凸狀的安放部92b。又，在反射構件92上，在上側主面 的外周部上形成有圍繞安放部92b且將其周面作爲反射發 光元件95發光的光的反射面92c的側壁部92a。由此，不僅 可以用螢光體94對來自發光元件95的光進行波長變換並直 接輻射到外部，而且可以用反射面92c使從發光元件95向橫 向等發光的光或從螢光體94放出到外側的光均勻無偏差地 95381.doc -55- 1245436 反射，可以有效地使軸上光度及亮度其 _ *至衫色再現性等提 局〇 反射構件92由氧化鋁陶莞、氮化銘材質燒結體、莫來石 材質燒結體或玻璃陶究等陶t、或者環氧樹脂等樹脂、或 者由Fe-Ni-C。合金、Cu-W、A1等金屬構成，通過進行切削 加工或模具成型等而形成。而且，可以通過在反射構件％ 的側壁部92a的内周面上實施切削加工或模具成型等形成 反射面92c ’或者通過在側壁部92&的内周面上例如利用電 鑛或蒸鑛等形成A卜Ag、Au、白金(Pt)、鈦㈤、絡㈣、· Cu等高反射率的金屬薄膜，從而形成反射面。 而且，在反射面92c由Ag或Cu等因氧化而容易變色的金 屬構成的情況下，與本發明的第二實施方式同樣，較佳者 係利用t解電鍍或無t解電鍍法在其表面上依次被覆有例 如厚度1〜10 μηι左右的Ni電鍍層和厚度爲〇 i〜3 左右 的Au電鍍層。由此，可以提高反射面92c的耐腐蝕性。 此外，與本發明的第二實施方式同樣，較佳者係反射面 _ 92b表面的算術平均粗糙度Ra.〇〇〇4〜* μηι，由此，可以 使反射面92c良好地反射發光元件95及螢光體叫的光。 反射面92c，例如其縱剖面形狀可以列舉伴隨朝向上侧而 向外側擴張的圖17及圖18所示的本發明的第十實施方式及 第十一實施方式的發光裝置90、90A的直線狀傾斜面、伴隨 -朝向上側而向外側擴張的曲面狀傾斜面或圖19所示的本發 · 明的第十二實施方式的發光裝置9〇B的本發明矩形的面等 形狀。 95381.doc -56- 1245436 本發明的反射面92c位於連接下端位於發光元件％的端 部的發光部98和安放部92b的上面92d及側面之間的角的光 路線99，或比光路線99還位於下側。由此，可以用反射面 92c有效地反射從發光元件95向橫向或下側方向發光的直 接光’可以使輻射光強度極高。 而且’在發光元件95安放在安放部92b的上面92d，並且， 發光元件95的電極與形成於安放部92b的上面92(1上的電極 墊或者由形成於基體91上面的配線導體的一部分構成的電 極墊（pad)電連接。該電極墊通過形成於基體91及反射構件 92内部的配線導體（圖中未示出）而向發光裝置9〇的外面（基 體91的侧面及下面）導出，並與外部電路基板連接。由此， 可以電連接發光元件95與外部電路。 此種電極墊例如通過在基體91或反射構件92的表面或内 部形成W、Mo、Cu、Ag等金屬粉末的金屬化層，或通過將 Fe-Ni-Co合金等管腳埋設在基體91或反射構件92中，或者 通過使形成了配線導體的絕緣構件構成的輸入輸出端子嵌 入並接合設置在基體91及反射構件92上的貫通孔而設置。 而且’較佳者係使Ni或金（An)等耐腐蝕性優越的金屬以1 〜20 μιη左右的厚度被覆在電極墊或配線導體的露出表面 上，在可以有效地防止電極墊或配線導體的氧化腐蝕，並 且，可以使發光元件95和電極墊的連接牢固。因此，更佳 者係利用電解電鍍或無電解電鍍法在電極墊或配線導體露 出的表面上依次被覆有例如厚度i〜丨〇 μηι左右的Ni電鍍層 和厚度爲〇·1〜3μηι左右的Au電鍍層。 95381.doc -57- 1245436 又，安放部92b，其側面有時如圖17所示朝向基體91而垂 直形成，有時如圖1 8所示朝向基體91而擴散地形成。在擴 散地形成的情況下，能夠將發光元件95産生的熱從安放部 92b有效地向下方傳遞，可以使發光元件95的放熱性提高， 可以良好地維持發光元件95的工作性。 在反射構件92爲絕緣構件的情況下，如圖丨7所示，發光 元件95及形成於安放部92b的上面92d上的電極墊，通過採 用金屬突起（電連接機構9 6)接合等倒裝式接合方式而電連 接。又’雖然在圖17中未圖示，但若在反射構件92上面形 成電極墊，則也能採用如金線（電連接機構96，）等引線接合 方式。較佳者係倒裝式接合方式，由於可以將電極墊設置 在發光元件95的正下方，故沒有必要在發光元件95的外周 的基體91的上面設置用來設置電連接用圖案的空間。由 此’可以有效抑地制從發光元件95發光的光被該基體91的 電連接用圖案用的空間吸收，且軸上光度降低。 此外’在基體91爲絕緣構件的情況下，如圖18所示，較 佳者係在由絕緣構件或金屬構件構成的反射構件92的安放 部92b的周圍形成貫通上下主面且比光路線還位於下側的 貫通孔97，發光元件95的電極與基體91上面的配線導體通 過貫通孔97而由導線（電連接機構96，）進行電連接。由此， 從發光元件95發光的直接光在比設於反射構件92的用來通 過導線96’的貫通孔97還上側的位置由反射面92c反射，可以 有效地防止直接光進入貫通孔97内而被吸收，可以提高輻 射光強度。又，可以使發光元件95的下面完全接合在反射 95381.doc -58- 1245436 構件92的安放部92b上，可以將發光元件95的熱良好地傳遞 到反射構件，可以進一步提高放熱性。 而且，貫通孔97的深度（即反射構件92底部的厚度）及貫 通孔97的孔徑係考慮與基體91的熱膨脹差及發光元件95産 生的熱傳導性等而適當選定的。又，反射構件92底部的厚 度即使在如圖1 7所示的情況下也可以適當選定。 又，通過使陶瓷所含的晶粒的平均粒徑爲1〜5 μηι來提高 基體91的反射率，從而可以有效抑制光從形成於反射構件 92的用來通過導線96，的貫通孔97漏出而被基體91吸收。 貫通孔97，如圖20的本發明的第十三實施方式的發光裝 置90C所示，較佳者係在其内部填充有含有絕緣性光反射粒 子的絕緣性膏97a，以便與反射構件92的上侧主面齊平面。 由此’即使從發光元件95及螢光體94發出的光進入貫通孔 97 ’也可以由光反射粒子有效地反射到上側，可以使發光 裝置的輕射強度或軸上光度或亮度、彩色再現性等光特性 良好。 絕緣性膏97a所含的光反射粒子係在硫酸鋇、碳酸鈣、氧 化^呂 '一氧化石夕等的組成中含有Ca、Ti、Ba、A卜Si、Mg、 的材料較佳者係表面的全反射率爲8 〇 %以上。由此， 可以使發光裝置的輻射強度或軸上光度或亮度、彩色再現 性等光特性良好。 透光11構件93由環氧樹脂或矽樹脂等透明樹脂或者玻璃 等構成3有可以將來自發光元件95的光進行波長變換的 營光體94。透光性構件％係用分配器等注入機填充在反射 95381.doc 1245436 構件92的内側，並用烘烤爐等進行熱固化，以便覆蓋發光 _ 疋件95。由此，可以利用螢光體94對來自發光元件％的光 進行波長變換，以取出具有所希望的波長光譜的光。 此外，透光性構件93設置爲其上面與發光元件95的發光 邛的間隔X爲0.1〜0.5 mm。由此，可以由發光元件95的發 光部上側的恒定厚度的透光性構件93所含的螢光體94對從 發光元件9 5發出的光高效地進行波長變換，並且那些進行 過波長變換的光不會被螢光體94妨害而可以直接放出到透 光性構件93的外部。其結果，可以提高發光裝置的輻射強 鲁 度’使軸上光度或亮度、彩色再現性等光特性良好。 如圖2 1所示，在發光元件95的發光部與透光性構件93的 表面的間隔X比0.5 mm長的情況下，螢光體94中鄰近發光元 件95的（用斜線表示的螢光體94)雖然可以直接激勵發光元 件95的光並進行波長變換，但難以將該波長變換過的光直 接放出到透光性構件93的外部。即，通過由透光性構件93 的表面附近的螢光體94(圖2 1的斜線部以外的螢光體94)妨 害光的進行，從而難以使向外部的軸上光度良好。 鲁 另一方面，如圖22所示，在發光元件95的發光部與透光 性構件9 3的表面的間隔X比〇 · i m m短的情況下，難以有效地 進行波長變換發光元件95的光。因此，未進行波長變換而 透過透光性構件93的視感性低的波長的光增多，難以使軸 · 上光度或亮度、彩色再現性等光特性良好。 又’透光性構件93的上面，如圖1 7所示，較佳者係在其 上形成凸的形狀。由此，即使對於從發光元件95向斜上方 95381.doc -60- 1245436 放出的光來說，也可以使發光部與透光性構件93表面的間 隔爲0·1〜0.5 mm，可以進一步提高輻射強度。 此外，本發明的發光裝置41、50、60、60A、60B、60C、 60D、70、80、90、90A、90B、90C，通過設置爲使丨個裝 置成爲規定的配置，或者通過將多個設置爲例如格子狀或 鋸齒狀、輻射狀、將多個發光裝置41、50、60、60A、60B、 60C、60D、70、80、90、90A、90B、90C構成的圓狀或多 邊形狀的發光裝置群，多群形成爲同心狀等規定的配置， 從而可以做成照明裝置。由此，由於利用半導體構成的發 光元件44、55、65、75、85、95的電子的再結合産生的發 光，故能夠比現有的利用了放電的照明裝置還低消耗電力 且耐用，可以做成發熱少的小型照明裝置。其結果，可以 抑制從發光元件44、55、65、75、85、95産生的光的中心 波長的變動’可以長期以穩定的輻射光強度或輻射光角度 (配光分佈）照射光，並且可以做成可抑制照射面中的顏色不 均或照度分佈的偏離的照明裝置。 又，通過將本發明的發光裝置41、50、60、60A、60B、 60C、60D、70、80、90、90A、90B、90C作爲光源設置爲 規定的配置，並且在這些發光裝置41、5〇、6〇、6〇a、6〇B、 60C、60D、70、80、90、90A、90B、90C的周圍設置光學 设計爲任意形狀的反射工具或光學透鏡、光擴散板等，從 而可以做成可以輻射任意配光分佈的光的照明裝置。 例如’如圖23、圖24的平面圖及剖面圖所示，在爲將多 個發光裳置 41、50、60、60A、60B、60C、60D、70、80、 95381.doc 1245436 90、90A、90B、90C，以多列配置於發光裝置驅動電路基 板101上，並在發光裝置41、50、60、60人、606、60(：、60〇、 70、80、90、90A、90B、90C的周圍設置有光學設計爲任 意形狀的反射工具100而成的照明裝置的情況下，在配置於 相鄰的1列上的多個發光裝置41、50、60、60A、60B、60C、 60D、70、80、90、90A、90B、90C中，較佳者係做成相鄰 的發光裝置41、50、60、60A、60B、60C、60D、70、80、 90、90A、90B、90C的間隔不會最短的配置的所謂的鋸齒 狀。即，在將發光裝置 41、50、60、60A、60B、60C、60D、 70、80、90、90A、90B、90C配置爲格子狀的情況下，通 過將成爲光源的發光裝置41、50、60、60A、60B、60C、 60D、70、80、90、90A、90B、90C排歹)J 在直、線上，從而眩 光增強，通過使此種照明裝置進入人的視覺，從而容易引 起不快感或對眼睛的障礙。與此相對，通過做成鋸齒狀， 從而可以抑制眩光，減輕對人眼的不快感或對眼睛的障 礙。進而，通過增長相鄰的發光裝置41、50、60、60 A、60B、 60C、60D、70、80、90、90A、90B、90C間的距離，從而 可以有效抑制相鄰的發光裝置41、50、60、60A、60B、60C、 60D、70、80、90、90A、90B、90C間的熱干涉，抑制安裝 了發光裝置 41、50、60、60A、60B、60C、60D、70、80、 90、90A、90B、90C的發光裝置驅動電路基板101内的熱的 不暢通，可以有效地向發光裝置41、50、60、60A、60B、 60C、60D、70、80、90、90A、90B、90C的外部輻射熱。 其結果，可以製作即使對人眼來說障礙也小的長期光學特 95381.doc -62· 1245436 性穩定的耐用（壽命長）的照明裝置。 此外，照明裝置係如圖25及圖26的平面圖及剖面圖所示 的在發光裝置驅動電路基板1 〇 1 a上，將有多個發光裝置 41、50、60、60A、60B、60C、60D、70、80、90、90A、 9OB、90C構成的圓狀或配置爲多邊形狀的發光裝置群，以 多群形成爲同心狀的照明裝置的情況下，較佳者係1個配置 爲圓狀或多邊形狀的發光裝置群中的發光裝置41、5〇、6〇、 60A、60B ' 60C、60D、70、80、90、90A、90B、90C的配 置數在外周側比照明裝置的中央側多。由此，可以一邊適 度保持發光裝置 41、50、60、60A、60B、60C、60D、70、 80、90、90A、90B、90C之間的間隔，一邊更多地配置發 光裝置 41、50、60、60A、60B、60C、60D、70、80、90、 90A、90B、90C，可以進一步使照明裝置的照度提高。又， 可以降低照明裝置的中央部的發光裝置41、5〇、6〇、6〇A、 60B、60C、60D、70、80、90、90A、90B、90C的密度， 抑制發光裝置驅動電路基板1 0 1 a的中央部中的熱的不暢 通。由此，發光裝置驅動電路基板101a内的溫度分佈變得 一樣，可以有效地向設置了照明裝置的外部電路基板或吸 熱設備傳遞熱，可以抑制發光裝置41、50、60、6〇A、6〇b、 60C、60D、70、80、90、90A、90B、90C的溫度上升。其 結果’發光裝置 41、50、60、60A、60B、60C、60D、70、 80、90、9GA、9GB、9GC可以長期穩^，並且可以製作耐 用的照明裝置。 至於此種照明裝置可列舉例如室内或室外所用的一般照 95381.doc -63- 1245436 明用器具、枝形吊、吟 币燈用照明器具、住宅用照明器具、辦公 至用照明态具、店|、展示用照明用器具、道路用照明器 具、感應燈器具及信號裝置、舞臺及演播室用的照明器具、 廣告燈、照明用電杆、水中照明用燈、閃光儀用燈、聚光 燈、埋入於電柱等的防範用照明、緊急用照明器具 '懷中 電燈、電光布告料或調光ϋ、自動亮滅H、顯示器等的 老光燈冑旦裝置、裝飾品、照光式開關、光感測器、醫 療用燈、車載燈等。 【實施例】 【實施例1】 關於本發明的第一實施方式的發光裝置41，以下示出實 施例。 首先’準備由成爲基體42的各種粒徑的晶粒構成的氧化 铭陶竟基體。又，在安放發光元件44的安放部42&的周圍， 形成經由形成於基體42内部的内部配線而用來電連接發光 元件44與外部電路基板的配線導體。而且，基體42上面的 配線導體由Mo-Μη粉末構成的金屬化層成型爲直徑爲〇」 mm的圓形墊，在其表面上依次被覆厚度3 ^|111的沁電鍍層與 厚度2 μιη的Αυ電鑛層。又，基體42内部的内部配線通過由 貫通導體構成的電連接部、所謂的通孔而形成。對於該通 孔，也和配線導體同樣，用由Μο-Μη粉末構成的金屬化導 體成型。 接著，用Ag膏將發出近紫外光的厚度爲〇.〇8 mm的發光 元件44安裝在安放部42a上，並通過由Αιι構成的接合引線將 95381.doc -64- 1245436 發光元件44電連接在配線導體上。 一接下來’利用分配器在發光元件料周圍被覆含有被發光 70件44的光激勵且進行黃色發光的螢光體的石夕樹脂（透光 性構件45)，並使其熱固化，製作作爲樣本的發光裝置41， 測定了光輸出。 而且，螢光體相對於矽樹脂儀1/4的填充率（質量％)均勻 地分散。又，螢光體使用其平均粒徑爲15〜8〇 _且進行 具有石榴石（garnet)結構的釔鋁酸鹽系的黃色發光的螢光 體。 # 在基體42的陶瓷的晶粒的平均粒徑爲1〇 左右的情況 下，光輸出爲14 mW。然而，在基體42的陶瓷的晶粒的平 均粒徑爲1〜5μιη的情況下，光輸出爲17mW，與陶瓷的晶 粒的平均粒徑爲10 μηι&右相比，光輸出的能量增加“％以 上。即，與陶瓷的晶粒的平均粒徑爲1〇 μιη左右的情況相 比，通過採用陶瓷的晶粒的平均粒徑爲丨〜5 μιη的基體，從 而考慮有效抑制進入基體42内部的光，並且由基體42的表 面中的光散射而被光照射的螢光體的數量增加，光輸出提 _ 高。 又，在爲了提高發光裝置41的光輸出而使電流值增加的 情況下，也確認了可以有效抑制陶瓷的平均粒徑爲丨〜5 的基體相對順時針方向電流的發光效率的降低。 ‘ 【實施例2】 接著，製作與上述實施例相同的結構且基體42燒結後的 陶瓷的晶粒的平均粒徑爲1(μιγι)、5(μηι)、1〇(μηι)的發光裝 95381.doc -65- 1245436 置4卜測定了相對於向發光元件44的負載電流的全光束(光 輸出）。而且，發光裝置41安裝在任何地方冷卻功能都同等 的放熱设備中，用積分球測定光輸出。其結果如圖7所示。 如圖27所示，在向發光元件料的負載電流的額定電流爲 2〇(mA)，額定電壓爲3·4(ν)的情況下，陶瓷的晶粒的平均 粒徑爲1(μιη)的發光裝置41的光輸出成爲〇96(lm)，發光效 率爲14(lm/W)。又，陶瓷的晶粒的平均粒徑爲5(μιη)的發光 裝置41的光輸出爲〇.8(lm)，發光效率爲12(lm/w)。與此相 對，陶瓷的晶粒的平均粒徑爲10(μιη)的發光裝置41的光輸 出變爲〇.55(lm)，發光效率係8(lm/w)。即，額定電流中的 發光裝置4 1的光輸出，與基體42的陶瓷的晶粒的平均粒徑 爲lObm)相比，陶瓷的晶粒的平均粒徑爲1(μιη)、5仏111)的 發光裝置41的光輸出提高45〜74(%)。 即，通過使基體42的陶瓷的晶粒的平均粒徑爲工〜5 ， 從而在有效地抑制進入基體42内部的光，並且，通過由陶 瓷的晶粒而在基體42表面的凹凸，由發光元件料發出的光 以成乎元全政射的狀態反射。因此，通過以均勻的光強度 照射填充於框體43内部的螢光體，並且光照射的螢光體的 數量增加，從而被發光元件44的光激勵的螢光體的概率上 升，螢光體的光變換效率提高。其結果，發光裝置41通過 使基體42的陶瓷的晶粒的平均粒徑爲1〜5μιη，從而可以作 爲白熾燈的發光效率爲12(Im/W)以上的顯示用或照明用的 光源而實用化。 此外，在爲了使發光裝置41的光輸出提高而使負載電流 95381.doc -66 - 1245436 曰夺在基體42的陶瓷的晶粒的平均粒徑大的情況下， 在比10G(mA)還低的電流值附近無法看到與負載電流成正 匕的光輸出的上升。與此相肖，通過減小陶究的晶粒的平 句粒位，攸而光輸出與電流成正比地上升至大的電流爲 止特別疋it過使平均粒徑爲j μιη，從而發光裝置4 j的光 輸出成正比地上升至丨丨〇 m Α附近爲止。即，通過減小基體 42的陶瓷晶粒的平均粒徑，從而基體42内部的熱擴散性提 同，可以抑制發光元件44的負載電流所導致的溫度上升， 可以抑制發光元件的發光效率的劣化。 進而’針對相對於發光裝置4丨的負載電流的發光元件44 的峰值波長’在改變陶瓷的晶粒的平均粒徑，製作發光裝 置41並進行測定時，知道了通過使基體42的陶瓷的晶粒的 平均粒徑爲1 μηι，從而減小發光元件44的峰值波長的變 動。由此，可以抑制依存於發光元件的峰值波長的螢光體 的變換效率。又，在發光裝置41由激勵光譜不同的多個螢 光體構成的情況下，可以抑制發光元件44的峰值波長的變 動而産生的螢光體的變換效率的變動。其結果，可以抑制 混合來自多個螢光體的激勵光並輸出的發光裝置41的光的 顏色的變動。例如，在螢光體由紅色螢光體、藍色螢光體、 綠色螢光體構成，發光元件44的峰值波長根據負載電流變 動的情況下，紅色螢光體、藍色螢光體、綠色螢光體的發 光強度通過發光元件44的峰值波長而以各自的特性進行變 動，並由發光裝置41輸出。即，來自紅色螢光體、藍色螢 光體、綠色螢光體的激勵光的混合光中的光強度的比例變 95381.doc •67- 1245436 動，輸出光的色調變動，無法得到所希望的色調的光。因 通過使基體42的陶瓷的晶粒的平均粒徑爲J μηι，從而 可以抑制發光元件44的峰值波長的變動，抑制輸出的光的 色凋的變動，可以製作具有穩定的發光特性及照明特性的 適用於照明用或顯示用的發光裝置。 【實施例3】 根據圖7 ’針對本發明的第六實施方式的發光裝置6〇(：， 以下示出實施例。 首先’準備成爲基體61的氧化鋁陶瓷基板。而且，基體 61 一體地形成具有安放部61a的凸部61b，使安放部61a的上 面與安放部61a以外的部位的基體61的上面平行。 基體61在直徑〇·8 mmx厚度〇·5 mm的圓柱板的上面中央 部上形成了直徑〇·4 mmx厚度（各種值）的圓柱狀的凸部611)。 又’在凸部61b的安放發光元件65的安放部61a上，形成 通過形成於基體61内部的内部配線而用來電連接發光元件 65與外部電路基板的電連接用圖案。電連接用圖案由 Mo-Mn粉末構成的金屬化層成型爲直徑〇· 1 mm的圓形墊， 其表面上依次被覆了厚度3 μηι的Ni電鍍層和厚度2 μιη的 Αυ電鍍層。此外，基體6 1内部的内部配線由貫通導體構成 的電連接部、所謂的通孔來形成。對於該通孔，也與電連 接用圖案同樣，用由Μο-Μ粉末構成的金屬化導體成型。 又，在基體61上面的凸部61b以外的整個部位上形成用來 利用An-錫（Sn)焊料接合基體61和反射構件62的接合部。該 接合部在Μο·Μη粉末構成的金屬化層的表面上被覆厚度3 95381.doc -68- 1245436 μιη的Ni電鍍層和厚度2μιη的Au電鍍層。 進而，準備了反射構件62。該反射構件62，在如圖7所示 的縱剖面中，具有内周面爲矩形的貫通孔62a，使該貫通孔 62a的内周面的表面成爲Ra爲0·1 μιη的反射面62b。 此外，反射構件做成爲：外形的直徑爲〇·8 mm，高度爲 1·0 mm，上側開口的直徑爲〇 8 mm，下側開口的直徑爲〇·5 mm，反射面62b的下端62c的高度（下側開口周圍的反射構 件62的厚度L)爲〇·15 mm的圓柱狀。 人之’在發出近紫外光的厚度爲〇·⑽mrn的發光元件65 中没置Au-Sn突起（電極66)，通過該Au_Sn突起將發光元件 65接合在電連接用圖案上，並且用Au_Sn焊料將反射構件62 接合在基體61上面的接合部上。發光元件65的發光部69與According to the present invention, since the arithmetic mean shirring degree of the surface of the light-transmitting member is larger in the central portion than in the outer peripheral portion, it is possible to suppress a difference in the radiation intensity of light emitted from the central portion and the outer peripheral portion of the light-transmitting member. In other words, light can be emitted from the light-emitting element without being reflected by the frame or the like, and light having a high intensity can be directly radiated from the central portion of the surface of the light-transmitting member, and moderately scattered by the rough surface of the center portion of the surface of the light-transmitting member. Reduce the light intensity. Accordingly, the light radiated from the central portion of the plain surface of the high-intensity and high-transmittance member is reflected by the frame, and the intensity of the light radiated from the outer peripheral portion of the light-transmissive member with reduced intensity can be approximated, and the intensity can be reduced. The difference in radiation intensity between the central portion and the outer peripheral portion of the small light-transmitting member. As a result, the light-emitting device can radiate light over a wide range, can suppress the phenomenon of glare, etc., which is generated by concentrating the radiation intensity on a part of the light-emitting surface and gives a strong stimulus to the human eye, and can suppress the bad influence on the human eye. According to the present invention, a conductor layer composed of the one end of the wiring conductor and a light-emitting element electrically connected by a conductive bonding material is formed on the placement portion protruding from the base body, and is formed around the conductor layer. There are convex portions made of an insulator. Therefore, it is possible to make the horizontal from the side of the light emitting element 95381. doc 1245436 The light emitted downward or obliquely is well reflected to the reflecting surface of the frame and will not be absorbed by the joint between the frame and the base or the surface of the base. It can be reflected by the frame at a desired radiation angle and outward. Well radiated. As a result, the intensity of the radiation emitted from the light emitting device can be stably maintained at 3 high. Also, since the mounting portion is protruded, the & mounting portion and the lower portion of the reflecting member can be reliably insulated. Therefore, when viewed from a plane, the lower end of the frame can be closer to the mounting portion, and the light emitted from the light-emitting element can be better reflected by the reflecting surface of the frame. In addition, the convex portion made of an insulator can prevent the conductive adhesive material from leaking out and spreading, the thickness of the conductive adhesive material can be made uniform, and the light-emitting element can be horizontally placed on the conductive layer. As a result, light can be emitted from the light-emitting element at a desired radiation intensity, and the light emitted from the light-emitting element can be reflected at a desired radiation intensity by the frame and radiated to the outside, and the radiation intensity of the light emitted from the light-emitting device can be increased. In addition, the light-emitting element can be horizontally placed on the conductor layer, so that the heat generated from the light-emitting element can be uniformly and uniformly radiated to the outside through the conductive adhesive material and the substrate. As a result, the temperature of the light-emitting element can be stably maintained at all times, and the light emitted from the light-emitting element can be stably maintained in a high state. In addition, it is possible to effectively prevent the light emitted from the light-emitting element from being irradiated onto the conductive adhesive material by the convex portion, and it is possible to effectively prevent the light radiated from the light-emitting device from being absorbed by the conductive adhesive material, thereby reducing radiation intensity and brightness Or the color reproducibility is reduced, and a light emitting device having high radiation intensity and excellent light emitting characteristics can be provided. 95381. doc -22-! 245436 According to the present invention, since the conductor layer is located inside than the outer periphery of the light-emitting element, the conductive adhesive material used to join the conductor layer and the light-emitting element can be prevented from being exposed from the conductor layer and the light-emitting element, which can be extremely effective. The light emitted from the light-emitting element is prevented from being irradiated onto the conductive adhesive material. As a result, the light emitted from the light emitting element can be prevented from being absorbed by the conductive adhesive material or reflected as light with low radiation intensity, the radiation intensity of the light emitted from the light emitting device can be two states, and the brightness or color reproducibility is excellent . In addition, even if the light emitted from the light-emitting element is ultraviolet light, the conductive adhesive material does not deteriorate, and the bonding strength between the conductive layer and the light-emitting element can always be very high, and the light-emitting element can be firmly fixed to the conductor layer for a long time. As a result, the electrical connection between the light-emitting element and the conductor layer can be reliably made for a long period of time, and the light-emitting device can be made durable. According to the present invention, since the side surface of the convex portion is inclined to expand outward toward the base side, the air at the corner of the side surface of the convex portion and the base body is easy to run out. Preventing air from entering the corner portion can effectively prevent the conductivity Voids are generated in the adhesive material and the light-transmitting member, and air in the voids expands due to temperature changes, causing peeling or cracking. In addition, the inclined side surface outside the convex portion can reflect light to the upper side well, and the luminous efficiency can be improved. According to the present invention, the light-emitting device is provided with a base body made of a flat-shaped ceramic; a light-emitting element; joined to the upper surface of the base body, and forming a convex shape in which the light-emitting element is placed on the central portion of the upper main surface; A reflecting member is formed on the outer peripheral portion of the upper main surface and surrounds the mounting portion and uses the inner peripheral surface as a side wall portion of a reflecting surface that reflects light emitted by the light emitting element to cover the light emitting element. Way set in the side wall portion 95381. doc -23-1245436 Pyrene 3 has a translucent member of a glare body that performs wavelength conversion of the light emitted by the light-emitting pieces. The reflecting surface is located on or in front of the corner connecting the light-emitting portion whose lower end is located at the end of the light-emitting element and the upper and side surfaces of the mounting portion, or on the lower side than the optical line. The distance between the upper surface of the light-transmitting member and the light-emitting portion is 〇1˜〇5. Therefore, it is possible to make the light emitted by the four-foot luminous 70 pieces, the intensity of the light radiated directly from the light emitting element to the upper side without being reflected by the reflecting surface very high. Use the upper side than the hair light 4 of the light emitting element. The phosphor contained in the light-transmitting member of constant thickness can efficiently perform wavelength conversion of light emitted from the light-emitting element, so that these wavelength-converted light can be directly emitted to the light-transmitting member without being hindered by the phosphor. Outside. As a result, the radiation intensity of the light-emitting device can be increased, and the optical characteristics such as on-axis luminance, brightness, and color reproducibility can be improved. In addition, the heat generated from the light-emitting element is easily transferred from the integrated mounting portion to the side wall portion. In particular, when the reflecting member is made of metal, the heat is quickly transferred to the side wall portion and is good from the outside to the outside of the side wall portion. Local jurisdiction shot. Therefore, it is possible to effectively suppress the deformation of the reflecting member by utilizing the difference in thermal expansion between the substrate and the reflecting member, and it is possible to maintain the optical characteristics of the radiated light for a long period of time. Also, "because the reflecting surface is located on the light path connecting the corners between the light-emitting part whose lower end is located at the end of the light-emitting element and the upper and side surfaces of the mounting part" or is located on the lower side than the light path, it can be used The reflecting surface effectively reflects the direct light that is emitted from the light emitting element in the lateral or lower direction, and can make the intensity of the radiated light extremely high. According to the present invention, the base body is formed with a wiring conductor from the upper surface to the outer surface, and the reflective member is formed around the mounting portion and penetrates between the upper and lower main surfaces and is 95381 more than the optical path. doc -24- 1245436 is a through hole located on the lower side. The electrode of the light-emitting element and the wiring conductor on the base are electrically connected by a lead through the through hole. Therefore, the direct light emitted from the light-emitting element is reflected by the reflecting surface at a position higher than the through-hole used to pass through the conductive wire provided on the reflective member, which can effectively prevent the direct light from being absorbed into the through-hole and absorbed, thereby improving Radiation light intensity. In addition, "the lower surface of the light-emitting element and the mounting portion of the reflecting member can be fully bonded", and the heat of the light-emitting element can be well transmitted to the reflecting member, thereby further improving local heat dissipation. Furthermore, by making the average grain size of the crystal grains contained in the ceramics 1 to 5 μm, the reflectivity of the substrate is improved, so that light can be effectively prevented from leaking out of the through holes for passing through the leads formed in the reflective member and absorbed by the substrate. According to the present invention, the inside of the through hole is filled with an insulating paste containing insulating light reflecting particles so as to be flush with the upper main surface of the reflecting member. Therefore, even if the light emitted from the light emitting element or the phosphor enters the through hole, light reflecting ions can be effectively reflected to the upper side, and the light intensity of the light emitting device, the on-axis brightness or brightness, and color reproducibility can be good. . According to the present invention, since the lighting device is provided so that the light-emitting device of the present invention has a predetermined configuration, light emission generated by electron recombination of a light-emitting element composed of a semiconductor can be made to be lighter than conventional light-emitting devices. The device also has a small power consumption and a durable small lighting device. As a result, 'the fluctuation of the central wavelength of the light generated from the light-emitting element can be suppressed, and the light can be irradiated at a long-term stable radiation intensity and radiation angle (light distribution)' and the color unevenness on the irradiation surface can be suppressed or Illumination device with uneven illumination distribution. 95381. doc -25-1245436 In addition, by setting the light-emitting devices of the present invention as a light source in a predetermined configuration, and surrounding the light-emitting devices, a reflection tool, an optical lens, a light diffusion plate, or the like which is optically designed in an arbitrary shape can be produced. Lighting device that radiates light with an arbitrary light distribution. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, the light-emitting element storage package (hereinafter also referred to as a package) and the light-emitting device of the present invention will be described in detail. Fig. 1 is a sectional view showing a light emitting device 41 according to a first embodiment of the present invention. The light-emitting device 41 is mainly composed of a base body 42, a frame body 43, a light-emitting element 44, and a light-transmitting member containing a phosphor (not shown). Such a light emitting device can output light emitted from the light emitting element 44 to the outside. The package of the present invention includes a base body 42, a frame body 43, a wiring conductor (not shown), and a light-transmitting member 45. The base 42 has a mounting portion 42a on which the light emitting element 44 is formed, and is made of ceramic. The frame 43 is joined to the outer peripheral portion of the upper surface of the base 42 so as to surround the mounting portion 42, and the inner peripheral surface serves as a reflecting surface that reflects light emitted from the light emitting element 44. One end of the wiring conductor is formed on the upper surface of the base 42 and is electrically connected to the electrode of the light-emitting element 44, and the other end is led out to the side or the lower surface of the base 42. The light-transmitting member 45 is provided so as to cover the light-emitting element 44 on the inside of the frame 43 and contains a phosphor that performs wavelength conversion of light emitted from the light-emitting element material. The base body 42 is composed of an alumina sintered body, an aluminum nitride sintered body, a mullite sintered body, or an insulator composed of ceramics such as glass ceramics, and functions as a support member for supporting the light-emitting element 44 and has a placement 95381 thereon. doc -26-1245436 The mounting portion 42a of the light emitting element 44. The average grain size of the crystal grains of the ceramics of the base 42 is ˜5. As a result, since the crystal grains have a very high density, the proportion of crystal grains on the surface of the substrate 42 increases. Since the light entering from the crystal grains into the interior of the substrate 42 can be effectively suppressed, the reflectance on the substrate 42 is improved, so The light output of the light-emitting device can be increased. Furthermore, the arithmetic average roughness of the upper surface of the base body 42 becomes a moderate size capable of reflecting the light emitted from the light-emitting element 44 in all directions on the upper surface of the base body 42. As a result, the Increasing the number of phosphors that are excited by the light reflected on the inner peripheral surface of the body 43 can increase the light output, brightness, and color reproducibility of the light-emitting device 41. Moreover, the average grain size of the crystal grains is 5 When pm is large, the proportion of crystal grains on the surface of the substrate 42 decreases, and the light entering from the crystal grains into the substrate 42 increases, and the reflectance on the substrate 42 tends to decrease. As a result, light emitted from the light emitting element 44 or The light emitted from the phosphor cannot be effectively reflected by the upper surface of the substrate 42, and the light output of the light-emitting device 41 is liable to decrease. In addition, when the average grain size of the crystal grains of the ceramic is smaller than 1 μΓη, The arithmetic average roughness on the body 42 is reduced, and the light emitted from the light emitting element 44 is easily reflected on the base 42 and is difficult to be reflected in all directions. As a result, phosphors other than the direction of the normal reflection are difficult to be excited, mainly due to the fact that The phosphor located in the direction of regular reflection contributes to wavelength conversion, the efficiency of wavelength conversion is reduced, and the light output of the light-emitting device 41 is easily reduced. Also, since the average grain size of the crystal grains of the ceramic of the substrate 42 is ˜5 μηι, The density of the crystal grains with high thermal conductivity of the substrate 42 increases, and the thermal conductivity of the substrate 42 is 95381. doc -27- 1245436 The heat emitted from the light-emitting element 44 can be efficiently radiated to the outside through the substrate 42. Therefore, since the reduction in light emission efficiency of the light-emitting element 44 due to heat can be suppressed ', the reduction in the light output of the light-emitting device 4 can be effectively suppressed. A wiring conductor (not shown in the figure) is formed on the mounting portion 42a to connect the light-emitting element 44 by an electric call. This wiring conductor is led to the outer surface of the light-emitting device 41 by a wiring layer (not shown) formed inside the base body 42 and is connected to an external circuit board by a solder material or a metal wire or the like, and is electrically connected to emit light. The element 44 is connected to an external circuit. The method of connecting the light emitting element 44 to the wiring conductor includes: a wire bonding method using a wire such as an Au wire or an A1 wire; or an electrode formed under the light emitting element 44 by using Au-tin (Sn) solder, Sn -Ag solder, Sn-Ag-Cu solder, Sn-lead (Pb) solder bumps, or a connection mechanism using metal bumps such as Au or Ag to connect flip-chip bonding methods. The preferred connection is made by flip-chip bonding. Therefore, since the wiring conductor can be provided directly below the light-emitting element 44 on the base body 42, it is not necessary to provide a region of the wiring conductor on the outer peripheral portion of the light-emitting element 44 on the base body 42. Thereby, the light emitted from the light-emitting element 44 can be effectively suppressed from being absorbed by the wiring conductor region of the base body 42 to reduce the radiated light output. The wiring conductor is made of a metallized layer composed of metal powder such as W, Mo, Mn, Cu, or Ag, and is formed on the surface or inside of the base 42. Alternatively, it may be formed by embedding pins such as Fe-Ni-Co alloy in the base 42. In addition, it is also possible to input 95381 by making an insulator made of a wiring conductor. doc -28- 1245436 The output terminal is provided by insert-bonding with a through-hole provided in the base 42. In addition, it is preferable that a metal having excellent corrosion resistance such as Ni or the like be coated on the exposed surface of the wiring conductor with a thickness of 1 to 20 µm. This can effectively prevent the oxidative corrosion of the wiring conductor, and can firmly connect the light-emitting element 4A to the wiring conductor. Therefore, it is preferable to sequentially coat the exposed surface of the wiring conductor by, for example, a nickel plating layer having a thickness of about 10 μm and an Au electricity layer having a thickness of about 0.1 to 3 μm by electrolytic plating or electroless plating. The frame 43 is mounted on the upper surface of the base 42 using a solder material such as solder or Ag solder or a bonding material such as an adhesive such as epoxy resin. Further, the housing 43 is formed with a through hole 43 with an upper opening larger than the lower opening, and has a reflection surface 43b on the inner peripheral surface that can reflect light emitted from the light emitting element 44 with a high reflectance. A method of forming such an inner peripheral surface is to form a frame body using a high-reflectivity metal such as Ag, An, platinum (Pt), titanium (Ti), chromium (Cr), or Cu, for example, by cutting or molding. 43. The inner peripheral surface is smoothed by using a polishing process such as electrolytic polishing or chemical polishing as a reflective surface. In addition, Cu-W alloy or sus (stainless steel) having excellent weather resistance and moisture resistance can also be used. The frame 43 is formed of gold, and a metal thin film is formed on the inner peripheral surface by metal plating, vapor deposition, or the like, such as Al, Ag, or Au. Furthermore, when the inner peripheral surface is made of a metal that easily discolors due to oxidation, such as Ag * cu, the surface can be coated on the surface with excellent light transmittance from the ultraviolet region to the visible region, low-melting glass, sol-gel glass, Silicon resin or epoxy resin can improve the corrosion resistance, chemical resistance, and weather resistance of the inner peripheral surface of the frame 43. Also, preferably, the surface arithmetic average roughness Ra of the inner peripheral surface of the frame 43 is 0. 1 μm or less. Thereby, the light emitted from the light-emitting element material can be good 95381. doc -29- 1245436 The ground is reflected towards the upper side of the light-emitting device. When Ra exceeds 0.1 μm, it is difficult to reflect the light emitted from the light-emitting element 44 toward the upper side of the light-emitting device with the inner peripheral surface of the frame 43 well, and it is easy to diffusely reflect inside the light-emitting device 4 丨. As a result, the loss of light inside the light emitting device 41 tends to increase, making it difficult to radiate light to the outside of the light emitting device 41 at a desired reflection angle. The light-transmitting member 45 of the present invention is preferably made of a material having a small refractive index difference from the light-emitting element 44 and a high light transmittance from the ultraviolet region to the visible light region. For example, the light-transmitting member 45 is made of a transparent resin such as silicone resin, epoxy resin, or urea resin, or a low-melting glass or sol-gel glass. As a result, it is possible to effectively suppress light reflection loss caused by the difference in refractive index between the light-emitting element 44 and the light-transmitting member 45, and it is possible to provide radiation to the outside of the light-emitting device 41 with high efficiency and a desired radiation intensity or angular distribution.的 照明 装置 41。 The light emitting device 41. In addition, such a light-transmitting member 45 is formed by filling an inside of the frame 43 with an injection machine such as a dispenser and curing it with a baking oven or the like so as to cover the light-emitting element 44. In addition, the light-transmitting members 45 are inorganic compounds such as blue, red, green, or yellow due to the recombination of electrons in the phosphor excited by the light emitted from the light-emitting element 44 by mixing and filling the light-transmitting members 45 at an arbitrary ratio. The phosphor can output light having a desired emission spectrum and color. It is also preferable that the light-transmitting member 45 is provided so that the distance between the upper surface and the light-emitting portion 46 of the light-emitting element 44 becomes 0. 1 ~ 〇. 8 mm. As a result, the phosphor included in the light-transmitting member 45 with a constant thickness above the light-emitting portion 46 of the light-emitting element 44 can efficiently change the wavelength of light emitted from the light-emitting element 44 and can effectively suppress those wavelength conversions. Passed light is hindered by phosphors, 95381. doc -30- 1245436 can effectively radiate to the outside of the light-transmitting member 45. As a result, it is possible to improve the light output of the light 4 and 41, and to improve the lighting characteristics such as brightness and color reproducibility. In addition, when the door X (refer to the figure) above the light-emitting portion 46 of the light-emitting element 44 and the light-transmitting member 45 is longer than 0.8 mm, the wavelength of the light-emitting element 44 adjacent to the light-emitting element 44 can be a good wavelength. The light emitted from the light-emitting element 44 is converted, but it is difficult to efficiently emit the light having the wavelength converted to the outside of the light-transmitting member 45. That is, “the phosphors near the upper surface of the light-transmitting member 45 hinder the progress of the wavelength-converted light, so that it is difficult to make the radiation of light to the outside good.” On the other hand, the light-emitting portion 46 of the light-emitting element 44 When the interval between the surfaces of the members 45 is smaller than 0.1 mm, the number of phosphors excited by irradiation with light emitted from the light emitting element 44 decreases, and it is difficult to efficiently perform wavelength conversion. As a result, light of a wavelength of low sensitivity that has passed through the light-transmitting member 45 without being subjected to wavelength conversion increases, and it is difficult to make the light output, brightness, and color reproduction characteristics good. In addition, although the light emitting element 44 may have a peak wavelength of radiated energy from the ultraviolet region to the infrared region, from the viewpoint of emitting white light or various colors of light visually, it is preferable that Light emitting elements from near ultraviolet to 300 nm to blue. For example, a GaN, GaAIN, InGaN, or InGaAIN gallium nitride-based compound semiconductor or a silicon carbide-based compound semiconductor or ZnSe ( Elements such as zinc selenide) that form the light emitting layer. 95381. doc 1245436 FIG. 2 is a cross-sectional view showing a light emitting device 50 of a second embodiment. The light-emitting device 50 is mainly composed of a base body 51, a reflecting member 52 as a frame body, a light-transmitting member 53, a conductive layer 57 and a convex portion 59. The light-emitting package for housing according to the present invention includes a base body 5, a frame-shaped reflecting member 52, and a conductive layer 57. The base body 51 has a mounting portion 51a of a light emitting element 55 in a central portion of the upper surface. The reflecting member 52 is provided on the outer peripheral portion of the upper surface of the base body 51 so as to surround the mounting portion 51a. The conductive layer 57 is formed on the placement portion 51 &. The light emitting element 55 is electrically connected to the conductive layer 57 via the conductive adhesive material 8. The conductive layer 57 is formed with a convex portion 59 on an upper surface which is located further outside than the outer periphery of the light emitting element 55. A wiring conductor is provided in the package. One end of the wiring conductor is formed on the upper surface of the base body 51 and is electrically connected to the electrode of the light emitting element, and the other end is led out to the side or lower surface of the base body 51. That is, one end of the wiring conductor serves as the conductor layer 57. The base body 51 of the present invention is composed of alumina ceramic or aluminum nitride sintered body, mullite sintered body, ceramic such as glass ceramic, or resin such as epoxy resin. The base 51 has a mounting portion 51 & on which the light emitting element 55 is mounted. When the substrate 51 is made of ceramic, the average particle diameter of the crystal grains of the ceramic is preferably 5 to 5 as in the first embodiment of the present invention. The mounting portion 51a is formed with a conductor layer 57 for mounting and fixing the light emitting element 55 on the base 51 and electrically connecting the light emitting element 55. The conductive layer 57 is led to the outer surface of the light emitting device 50 through a wiring layer (not shown) formed inside the base body 51. By connecting the lead-out portion on the outer surface of the light-emitting device 50 to an external circuit board, the light-emitting element 55 is electrically connected to an external circuit. In the case where the substrate 51 is made of ceramic, it is sintered at high temperature to become a conductive layer 95381. doc -32-1245436 57 is a metal paste made of W, Mo-Mn, Cu, Ag, etc. to form a conductive layer 57 on the upper surface of the substrate 51. When the base body 51 is made of resin, a pin made of Cu, Fe-Ni alloy, or the like is cast and fixed inside the base body 51. The convex portion 59 is provided on the conductive layer 57 on the upper side than the outer periphery of the light emitting element 55 on the inner side. The convex portion 59 may be a conductive material or an insulating material. When the convex portion 59 is made of an insulating ceramic, for example, a ceramic paste containing a material forming the base body 51 as a main component by printing is formed by sintering at a high temperature at the same time as the conductive layer 57. When the base body 51 is made of resin, for example, the convex portion 59 is made of the same material as the base body 51, and is formed by mold molding at the same time as the base body 51. When the convex portion 59 is a conductive material, it can be formed by printing and applying a metal paste on the conductive layer 57 and sintering, or by providing a protruding portion on a pin by cutting or the like. As described above, the conductive layer 57 has a convex portion 59 formed on the upper surface located on the inner side than the outer periphery of the light emitting element 55. Therefore, the light-emitting element 55 is lifted higher than the conductive layer 57 by the convex portion 59, and a gap can be reliably provided between the lower surface of the light-emitting element 55 and the upper surface of the conductive layer 57. Thereby, it is possible to prevent the conductive adhesive material 58 from being leaked out by the weight of the light-emitting element 55 and leak out of the conductive layer 57 to diffuse. 'The conductive adhesive material 5 8 can be uniformly formed on the conductive layer 5 7 to emit light. The element 55 is placed horizontally on the conductor layer 57. As a result, light that can emit light from the light emitting element 55 at a desired emission angle and light emitted from the light emitting element 55 can be reflected by the reflection member 52 at a desired radiation angle and emitted to the outside to emit light from the light emitting device. The radiation intensity is increased. 95381. doc -33- 1245436 Also, by forming the conductive adhesive material 58 on the conductive layer 57 uniformly, the light-emitting element 55 can be horizontally placed on the conductive layer 57, so that the heat generated from the light-emitting element 55 can be passed through. The conductive adhesive material 58 and the substrate 51 are effectively radiated to the outside. As a result, the temperature of the light emitting element 55 can be kept stable at all times, and the radiation intensity of light emitted from the light emitting element 55 can be kept stable in a high state. In addition, the conductive adhesive material 58 can be effectively prevented from flowing out to a position outside the outer periphery of the light emitting το member 55, and being held under the light emitting element 55 can effectively prevent light emitted from the light emitting element 55 from flowing out to It is absorbed by the conductive adhesive material 58 at a position outside the outer periphery of the light emitting element 55. As a result, it is possible to provide a light emitting device 50 having high radiation intensity and excellent light characteristics such as brightness and color reproducibility. The height of the convex portion 59 is preferably 0.001 to 〇1 mm. Accordingly, a good meniscus of the conductive adhesive material 58 can be formed between the light emitting element 55 and the conductive layer 57, the outflow of the conductive adhesive material 58 can be prevented more effectively, and the light emitting element 55 can be further improved. The bonding strength with the conductor layer 57. 3A and 3B are enlarged plan views of the conductive layer 57 and the convex portion 59. FIG. As shown in FIG. 3A, a plurality of, for example, hemispherical convex portions 59 are provided on the upper surface of the conductive layer 57 located on the inner side than the outer periphery of the light emitting element 55. Moreover, as shown in FIG. 3b, a plurality of rectangular convex portions 59 may be provided on the upper surface of the conductive layer 57 located inside than the outer periphery of the light emitting element 55 so as to be parallel to the outer periphery of the light emitting element M. As shown in FIGS. 3A and 3B, by providing a plurality of convex portions 59, a gap can be conceivably provided between the lower surface of the light emitting element 55 and the upper surface of the conductive layer 57, and the upper surface of the conductive layer 57 and the lower surface of the light emitting element 55 Shape between 95381. doc -34- 1245436 forms the meniscus of a good conductive adhesive material 58. Here, it is important that the light-emitting element 55 is placed horizontally with respect to the conductive layer 57 and the protrusions 59 are provided in a well-balanced manner. By providing a convex portion having a smaller area than the area of the lower surface of the light emitting element 55 on the conductive layer 57, it is possible to prevent the conductive layer 57 and the lower surface of the light emitting element 55 from being bonded through the conductive adhesive material 58. The conductive adhesive material 58 used to bond and fix the light emitting element 55 to the conductive layer 57 leaks out of the conductive layer 57 and diffuses. The conductive adhesive material can be uniformly diffused on the mounting portion 5 and 3, and the light emitting element 55 can be horizontally leveled. The ground is placed on the placement section 5 1 a. The light emitting element 55 is connected to an electrode provided on the underside thereof by a conductive adhesive material 58 such as a paste or gold (Au) -tin (Sn) solder. Further, it is preferable that the 'conductor layer 57 is formed by coating a metal having excellent corrosion resistance such as Ni or Au with a thickness of about 1 to 20 on the exposed surface. This can effectively prevent the oxidative corrosion of the conductive layer 57 and can secure the connection between the light emitting element 55 and the conductive layer 57. Therefore, it is preferable that the exposed surface of the conductor layer 57 is sequentially covered with, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0-1 to 3 μm by electrolytic plating or electroless plating. . The reflecting member 52 is mounted on the upper surface of the base body 51 by using a solder material such as solder or Ag solder or a bonding material such as an adhesive such as epoxy resin. The reflection member 52 is formed with a through hole 52a in the central portion. Preferably, the inner peripheral surface of the through-hole 52a is used as a reflective surface 52b that effectively reflects light emitted from the light emitting element 55 and the phosphor. The reflecting surface 52b is 95381 by cutting or molding the reflecting member 52. doc -35- 1245436 type, grinding, etc., are formed into smooth surfaces with high light reflection efficiency. Or, 'Al, Ag, Au, platinum (Pt), titanium (Ti), chromium (C0, Cu, etc.) can be formed on the inner peripheral surface of the through hole 52a by electroplating, vapor deposition, or the like, for example. The reflective surface 52b is formed. In the case where the reflective surface 52b is made of a metal that easily discolors due to oxidation such as Ag or Cu, it is preferable to sequentially coat the surface with, for example, a thickness by electrolytic plating or electroless plating. The Ni plating layer of about 1 to 10 and the Au plating layer having a thickness of about 0 μm to 3 μηι. As a result, the corrosion resistance of the reflective surface 52b can be improved. In addition, the arithmetic average of the surface of the reflective surface 52b is preferred. The roughness Ra is from 0.004 to 4 μm. “This” allows the reflecting surface to reflect the light of the light emitting element 55 and the phosphor well. If Ra exceeds 4 μm, it is difficult to uniformly reflect the light of the light emitting element 55. Diffuse reflection easily occurs in the interior of the light-emitting device. On the other hand, it is less than 0. At 004 μm, it tends to be difficult to form such a surface stably and effectively. Also, the reflection surface 52b includes, for example, the shape of the longitudinal cross-section, such as a straight inclined surface as shown in FIG. 2 that expands outward as it goes upward, and a curved inclined surface or rectangular surface that expands outward as it goes upward. . As described above, the light-emitting element housing package of the present invention is configured by placing the light-emitting element 5 5 on the mounting portion 51 a and electrically connecting the conductive layer 57 with the conductive adhesive material 58, and covering the light-emitting element 55 with the light-transmitting member 53. Thereby, a light emitting device 50 is formed. The translucent member 53 of the present invention is made of a transparent resin such as epoxy resin or silicone resin. The translucent member 53 is filled inside the reflective member 52 with an injection machine such as a dispenser, and is heat-cured with a baking oven or the like so as to cover the light-emitting elements 55. 95381. doc -36-1245436 The translucent member 53 may include a phosphor capable of wavelength-converting the light from the light-emitting element 55. As shown in Fig. 2, the top surface of the translucent member 5 3 is preferably formed in a convex shape. This makes it possible to approximate the optical path length of light emitted from the light-emitting element 55 in various directions through the light-transmitting member 53, and it is possible to effectively suppress the occurrence of unevenness in radiation intensity. Fig. 4 is a sectional view showing a light emitting device 60 according to a third embodiment of the present invention. The light-emitting device 60 is mainly composed of a base 61, a reflecting member 62 as a frame, and a light-transmitting member 63 containing a phosphor 64. The light emitting device 60 can direct the light emitted from the light emitting element 65 to emit light to the outside. The base 61 in the present invention is made of alumina ceramics, aluminum nitride sintered bodies, mullite sintered bodies, ceramics such as glass ceramics, or resins such as epoxy resins. In addition, the base body 61 has a light emitting element 65 on the upper surface thereof, and a mounting portion 61a protruding from the upper surface. When the substrate 61 is made of ceramic, the average particle diameter of the crystal grains of the ceramics is preferably 5 μm, as in the above embodiment. Such a mounting portion 61a can be made of alumina ceramics, aluminum nitride sintered bodies, mullite sintered bodies, glass ceramics, etc. on the base 61 by using a bonding material such as a solder material or an adhesive. Pottery: Yes, a convex part 6 made of a metal such as Fe_Ni_c〇 alloy or Cu-W or a resin such as epoxy resin is mounted on the base 61, or the convex part 6ib and the base 61 can be used as a -body on the base 61 And formed. χ ′ may be provided by inserting and mounting the convex portion 61b made of ceramic, metal, or resin described above in a through hole provided in the center of the base body so that the upper side thereof protrudes from the upper surface of the base body 61. 95381. doc • 37-1245436 It is preferable that the convex portion 61b and the base 61 are made of the same material. As a result, the difference in thermal expansion between the mounting portion 61a and the base 61 can be reduced, deformation of the mounting portion 61a can be effectively suppressed, the position of the light emitting element 65 is shifted, and the light emitting efficiency is reduced. More preferably, the convex portion 61b is integrated with the base 61. Accordingly, since it is not necessary to interpose a bonding material between the convex portion 61b and the base body 61, it is possible to radiate heat generated from the light emitting element 65 to the base body 6i extremely well. When the convex portion 61b is integrated with the base body 1, for example, a ceramic green sheet (unsintered) that becomes the convex portion 61b or the base body 61 may be laminated and sintered, and a metal processing method such as cutting may be used, or It is produced by molding a resin mold by injection molding or the like. Further, as shown in the light emitting device 60a of the fourth embodiment of the present invention, the convex portion 61b may be inclined to expand outward as the side faces the base 61 side. Thereby, the diffusivity of the heat generated from the light emitting element 65 can be improved, and the side of the protruding mounting portion 61a can be used to efficiently reflect light upward. As a result, the light-emitting efficiency of the light-emitting element 65 and the efficiency of the wavelength conversion of the phosphor 64 can be improved, and the light emitted from the light-emitting element ^ or the phosphor 64 can be effectively reflected to the top, and it can output at a high radiation intensity for a long time. Light. A pattern for electrical connection as a wiring conductor is formed on the mounting portion 61 a to connect the light-emitting element with an incoming call (the pattern for electrical connection is not shown in the figure and is derived by a wiring layer (not shown in the figure) formed inside the base body 61). To the outer surface of the light-emitting device, and connected to an external circuit substrate. Thus, the light-emitting element ㈣ external circuit can be electrically connected. The method of connecting the light-emitting element 65 to the pattern for electrical connection is through 95381. doc -38- 1245436 A method of connecting by wire bonding, or a flip-chip bonding method using a connection of an electrode 66 such as a solder bump under the light-emitting element 65. The preferred connection is made by flip-chip bonding. Accordingly, since the pattern for electrical connection can be provided directly under the light-emitting element 65, it is not necessary to provide f on the base 61 on the outer periphery of the light-emitting element 65 for providing the pattern for electrical connection. Accordingly, it is possible to effectively suppress the light emitted from the light emitting element 65 from being absorbed by the paste for electrical connection patterns of the base 61, thereby reducing the on-axis lightness. The pattern for electrical connection can be formed by forming a metallized layer of metal powder such as metal, 1 ^ 〇, (: 11, 八 §) on the surface or inside of the base 61, and by embedding a tube such as Fe-Ni-Co alloy in the base 61. It can be installed by insert-bonding an input / output terminal made of an insulator formed with a wiring conductor with a through-hole provided in the base 61. Furthermore, a preferable one is one having excellent corrosion resistance such as Ni or gold (Au). The metal is coated on the surface exposing the pattern for electrical connection with a thickness of 1 to 20 μm, which can effectively prevent oxidation corrosion of the pattern for electrical connection, and can make the connection between the light emitting element 6 $ and the pattern for electrical connection firm. Therefore, more The best one is an electrolytic plating method or an electroless plating method in which the surface of the pattern for electrical connection is sequentially covered with, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm. As in the second embodiment of the present invention, the reflecting member 62 is mounted on the upper surface of the base 61 using a solder material such as solder or Ag solder or a bonding material such as an epoxy resin or the like. The reflecting member 62 is A through hole 62a is formed in the central portion, and the inner peripheral surface is used as a reflection 95381 for reflecting light emitted by the light emitting element 65. doc -39- 1245436 shooting surface 62b. The reflecting surface 62b is formed in the same manner as the second embodiment of the present invention, and description thereof is omitted. In addition, the arithmetic average roughness scale of the surface of the reflecting surface 62b is the same as that of the second embodiment of the present invention, and more preferably, it is 0 to 4 µm. Thereby, the reflecting surface can reflect the light of the light emitting element 65 and the fluorescent body 64 well. The longitudinal cross-sectional shape of the reflecting surface 62b can be, for example, a linear inclination of the light-emitting devices 60, 60A, and 60B of the third to fifth embodiments of the present invention shown in FIGS. 4 to 6 as they expand outward toward the upper side. Such as a surface, a curved inclined surface that expands outward as it goes toward the upper side, or a rectangular surface of the light emitting device 60C of the sixth embodiment of the present invention as shown in FIG. Although the reflecting member 62 may be mounted on any portion other than the convex portion 61b on the base 61, it is preferably mounted around the light-emitting element 65 so as to have a desired surface accuracy, for example, in a longitudinal section of the light-emitting device. The light-emitting element 65 is sandwiched therebetween and the reflection surfaces 621 provided on both sides of the light-emitting element 65 are provided in a symmetrical state in which the reflection surface 62b is provided. Thus, not only the light from the light-emitting element 65 is wavelength-converted by the phosphor and radiated directly to the outside, but also the light emitted from the light-emitting element 65 to the lateral direction and the like from the light-emitting element 65 can be uniformly and deflected with the reflecting surface 62b. Reflecting the light emitted from the phosphor 64 to the lower side can effectively improve the on-axis luminance, brightness, and even color reproducibility. In particular, as shown in FIG. 6, the closer the reflecting member 62 is to the convex portion 61b, the more significant the above-mentioned effect is. Thus, by surrounding the protrusion having the mounting portion 61 a with the reflection member 62.  Around the part 6lb, more light can be reflected, and higher on-axis brightness can be obtained. 95381. doc -40-1245436 In addition, the light-emitting portion 69 of the light-emitting element 65 placed on the mounting portion 61a is provided at a position higher than the lower end 62c of the reflection surface 62b. That is, the height from the upper surface of the base 61 of the light emitting portion 69 of the light emitting element 65 is larger than the thickness L of the reflecting member 62 around the lower opening portion of the through hole 62a. Accordingly, it is possible to effectively prevent the light emitted from the diffuse reflection light-emitting element 65 from being caused by a change in the upper layer of the lower surface 62c of the reflecting surface 62b during processing of the reflecting member 62, and a solder material leaking out when the reflecting member 62 is bonded to the base 61. . In addition, a large amount of phosphors 64 near the surface of the light-transmitting member 63 can be irradiated with light emitted from the light-emitting element 65, and the wavelength conversion efficiency can be made very good. The translucent member 63 of the present invention is made of a transparent resin such as an epoxy resin or a silicone resin containing a phosphor 64 capable of wavelength-converting light from the light-emitting element 65. The translucent member 63 is filled inside the reflective member 62 with an injection machine such as a dispenser, and is heat-cured with a baking oven or the like so as to cover the light-emitting element 65. By changing the wavelength of the light from the light emitting element 65 by the phosphor 64, light having a desired wavelength spectrum can be extracted. In addition, the 'light-transmitting member 63 is set such that the interval X between the upper surface and the light-emitting portion of the light-emitting element 65 is 0. 1 ~ 〇_5 mm. Therefore, by using the phosphor included in the light-transmitting member 63 with a constant thickness above the light-emitting portion 69 of the light-emitting element 65, the light emitted from the light-emitting element 65 can be wavelength-converted efficiently. Without being hindered by the phosphor 64, it can be directly released to the outside of the light-transmitting member 63. As a result, the radiation intensity of the light-emitting device can be increased, and optical characteristics such as on-axis luminance, brightness, and color reproducibility can be made good. As shown in FIG. 8, when the distance X between the light-emitting portion 69 of the light-emitting element 65 and the surface of the light-transmitting member 0 is larger than 0.5 mm, the phosphor 64 is adjacent to the light-emitting element 95381. Doc -41-1245436 65 phosphor (phosphor 64 indicated by diagonal lines) can directly excite the light from the light emitting element 65 and perform wavelength conversion, but it is difficult to directly emit the processed wavelength to the outside of the light-transmitting member 0. Transformed light. In other words, the phosphor 64 (the phosphor 64 other than the oblique line portion in FIG. 8) near the surface of the light-transmitting member 63 hinders the progress of light, making it difficult to make the brightness on the external axis good. On the other hand, as shown in FIG. 9, when the interval X of the light-emitting portion of the light-emitting element 65 from the surface of the light-transmitting member 63 is smaller than ο !! mm, it is difficult to efficiently perform wavelength conversion of the light of the light-emitting element 65. Therefore, light with a low wavelength that passes through the light-transmitting member 63 without undergoing wavelength conversion increases in visibility, and it is difficult to make optical characteristics such as on-axis luminance, brightness, and color reproducibility good. As shown in the light-emitting device 60D of the seventh embodiment of the present invention, the light-transmitting member 63 is preferably such that the arithmetic mean shirring degree on the surface is larger in the central portion than in the outer peripheral portion. This makes it possible to suppress a difference in the radiant intensity of the light emitted from the central portion and the outer peripheral portion of the light-transmitting member 63. That is, the rough surface 67 at the central portion of the surface of the light-transmitting member 63 has a high intensity, which emits light from the light-emitting element 65 without being reflected by the reflective member 62 and is lightly emitted from the central portion of the surface of the light-transmitting member 63. The light diffuses moderately, reducing the intensity of the light. Thereby, the intensity of the light radiated from the central portion of the surface of the light-transmitting member 63 whose light intensity is reduced can be approximated to the intensity of the light radiated from the outer peripheral portion of the surface of the light-transmitting member 63, and light transmission can be reduced. The difference in radiation intensity between the central portion and the outer peripheral portion of the sexual member 63. As a result, the light emitting device can radiate the same light over a wide range, and can suppress the phenomenon of glare that gives a strong stimulus to the human eye due to the radiation intensity concentrated on a part of the light emitting surface, and can suppress the adverse effect on the human eye. 95381. doc # -42- 1245436, the arithmetic average crude sugar content on the surface of the light member 63 may be greater than or equal to μηΐ in the central portion and less than or equal to 1 μm in the outer peripheral portion. Thereby, the radiation intensity on the surface of the light-transmitting member 63 can be made more uniform without deviation, and the radiation intensity can be made good. Further, when the light-transmitting member 63 is formed of a smooth surface from the central portion to the outer peripheral portion, the distance from the light-emitting element 65 to the light-transmitting member 63 is shortened at the central portion, so that the propagation loss is also reduced and the radiation intensity is strong. On the other hand, the reflection member 62 on the outer periphery of the light-transmitting member 63 reflects the light of the light-emitting element 65 and emits the light to the outside of the light-emitting device. Therefore, the optical path length becomes long, and the radiation intensity is small due to the reflection loss of the reflection member 62 . As a result, a large difference occurs in the light intensity between the central portion and the outer peripheral portion of the light-transmitting member 63, and the color of the light emitted from the light-emitting device is uneven or the illuminance distribution on the illuminated surface is uneven. On the other hand, by making the arithmetic average shirring degree of the surface of the light-transmitting member 63 larger in the central portion than in the outer peripheral portion, it is possible to effectively prevent the color unevenness of the light emitted from the light emitting device or the illuminance distribution on the irradiation surface. Both are produced. Such a rough surface 67 can be formed by, for example, covering a peripheral portion of the surface of the light-transmitting member 63 with a metal film, and spraying and roughening a powder body such as ceramics from the upper side of the light-emitting device. The upper surface of the light-transmitting member 63 may be convexly shaped as shown in FIG. 4. Thus, even for light emitted obliquely upward from the light emitting element 65, the distance between the light emitting portion 69 and the surface of the light-transmitting member 63 can be 〇1 ~ 0. 5 mm can further increase the radiation intensity. Fig. 11 is a sectional view showing a light emitting device 70 of an eighth embodiment of the present invention. The light-emitting device 70 is mainly composed of a base 71 and reflective members 72 and 95381 as a frame. doc -43- 1245436 consists of a light-transmitting member 73, a conductive layer 77, and a convex portion 79. The light-emitting element housing package of the present invention includes a base body 71, a frame-shaped reflective member 72, and a conductive layer 77. The base body 71 has a mounting portion 71a of the light emitting element 75 on the upper center portion. The reflecting member 72 is provided on the outer peripheral portion of the upper surface of the base body 71 so as to surround the mounting portion 71a. The conductive layer 77 is formed on the mounting portion 71a. The light emitting element 75 is electrically connected to the conductor layer 77 via the conductive adhesive material 8. A convex portion 79 made of an insulator is formed around the conductor layer 77. A wiring conductor is provided in the package. One end of the wiring conductor is formed on the upper surface of the base body 71 and is electrically connected to the electrode of the light-emitting element 75, and the other end is led out to the side or lower surface of the base body 71. That is, one end of the wiring conductor becomes the conductor layer 77. The substrate 71 in the present invention is made of alumina ceramics, sintered aluminum nitride materials, sintered mullite materials, ceramics such as glass ceramics, or resins such as epoxy resins. The base body 71 has a mounting portion 81a on which the light emitting element 5 is mounted. When the substrate 71 is made of ceramics, the average particle diameter of the crystal grains of the preferred ceramic is 1 to 5 µm, as in the above embodiment. On the mounting portion 71a, a conductive layer 77 is formed in which the light-emitting element 75 is placed and fixed on the base 71, and the light-emitting element 75 is electrically connected. The conductor layer 77 is led out to the outer surface of the light emitting device 70 through a wiring conductor (not shown) formed inside the base 71. By connecting the lead-out portion on the outer surface of the light-emitting device 70 to an external circuit board, the light-emitting element 75 and an external circuit are electrically connected. In the case where the conductor layer 77 is composed of ceramic, the conductor layer 77 is sintered at a high temperature on the upper surface of the substrate 71 to form a conductor layer 77 composed of W, Mo-Mn, Cu, Ag, etc. 95381. doc -44- 1245436: metal paste. Also, in the case where the base body 71 is made of resin, the mold is formed of Cu or Fe. A pin made of Ni alloy or the like is provided and fixed inside the base body 71. The soil > convex portion 79 is formed around the conductive layer 77. In the case where the substrate is made of ceramics, for example, the convex portion 79 is formed by printing and applying the material forming the substrate M as a knife-made ceramic paste, and the metal paste as a conductor layer, and sintered at a high temperature. When the base body 71 is made of resin, for example, the convex portion 79 is made of the same material f as the base body 71, and is formed with the base body 71 by molding. The convex portion 79 may be made of the same material as the base 71, or may be different. Since a convex portion made of an insulator is formed around the conductive layer 77, the convex portion 79 can prevent the conductive adhesive material 78 from leaking out of the conductive layer 77. The thickness of the conductive adhesive material 78 can be made uniform, and the light emitting element 75 can be horizontally placed on the conductive layer 77. As a result, light can be emitted from the light emitting element at a desired emission angle, and light emitted from the light emitting element 75 can be reflected at a desired radiation angle and radiated to the outside, so that light emitted from the light emitting element 75 can be radiated. Increased strength. In addition, the light-emitting element 75 can be horizontally placed on the conductive layer 77, so that the heat generated from the light-emitting element 75 can be efficiently radiated to the outside through the conductive adhesive 78 and the base 71 without deviation. As a result, the temperature of the light-emitting το member 75 can be constantly maintained, and the light emitted from the light-emitting element 75 can be stably maintained in a high state. Further, it is possible to effectively prevent light emitted from the light emitting element from being reflected by the convex portion 79 to the conductive adhesive material 78, and it is possible to effectively prevent from the light emitting device 95381. doc -45- 1245436 The absorbed light is absorbed by the conductive adhesive material 78, resulting in a decrease in radiation intensity, a reduction in partyness or color reproducibility. Thus, it is possible to provide a light emitting device having a high light emission intensity and excellent light emission characteristics. The convex portion 79 may or may not cover the outer peripheral portion of the conductive layer 77. In the case where there are a plurality of conductive layers 77, as shown in FIG. 12A, the convex portion 79 may be formed on the entire circumference of each conductive layer 77, or may be formed only on a plurality of conductive layers 77 as shown in FIG. 12B. Formed around the assembly. Further, as shown in FIG. 13A, the exposed portion of the conductive layer 77 may be located outside the outer periphery of the light emitting element 75. Preferably, as shown in FIG. NB, the exposed portion of the conductive layer is located further than the outer periphery of the light emitting element 75. Inside. Thereby, the conductive adhesive material 78 for bonding the conductive layer 77 and the light emitting element 75 can be prevented from being exposed between the conductive layer 77 and the light emitting element 75, and the light emitted from the light emitting element 75 can be prevented from being radiated to the conductivity extremely effectively. Adhesive material 78. As a result, the light emitted from the light emitting element 75 can be prevented from being absorbed by the conductive adhesive material 78 or reflected as light having a low radiation intensity, the radiation intensity of the light emitted from the light emitting device can be made high, and the brightness or color can be improved. Excellent reproducibility. In addition, even if the light emitted from the light emitting element 75 is ultraviolet light, the conductive adhesive material 78 is not deteriorated, and the bonding strength of the conductive layer 77 and the light emitting element 75 can always be high, and the light emitting element 75 can be firmly fixed for a long time. On the conductor layer 77. As a result, the electrical connection between the electrode 76 of the light emitting element 75 and the conductor layer can be reliably made for a long period of time, and the light emitting device can be made durable. Further, it is preferable that the side surface of the convex portion 79 is inclined so as to expand outward as it goes toward the base 71 side. By such a configuration, the side of the convex portion 79 and the base 71 95381. The air in the upper corner of doc -46- 1245436 is easy to escape, which can prevent air from entering the corner. It can effectively prevent voids in the conductive adhesive material 78 and the light-transmitting member 73 due to temperature changes and the like. The air in the void expands to cause peeling or cracking. In addition, the inclined side surface outside the convex portion 79 can reflect light to the upper side well, and can improve the light emitting efficiency. It is preferable that the convex portion 79 has a reflectance of 60% or more with respect to light emitted from the phosphors included in the light emitting element 75 and the translucent member 73. According to this configuration, the light emitted from the light emitting element 75 or the phosphor can be more effectively prevented from being absorbed by the convex portion 79 or reflected as light having a low radiation intensity, and the wheel emission intensity of the light emitted from the light emitting device can be extremely high. If the reflectance of the light of the convex portion 79 is less than 60% ', the amount of light emitted from the light-emitting element 75 or the phosphor is absorbed by the convex portion 79, and the radiation intensity of the light emitted from the light-emitting device is likely to decrease. An electrode 76 provided below the light-emitting element 75 is connected by a conductive adhesive material 78 such as an Ag paste, gold (Au), and tin (Sn) solder. Also, as in the second embodiment of the present invention, the conductive layer π preferably has a thickness of about 1 to 20 μm, and a metal having excellent corrosion resistance, such as arsenic or ba1 |, is coated on the exposed surface. Further, the reflecting member 72 is mounted on the upper surface of the base 71 using a solder material such as solder or Ag solder, or a bonding material such as an epoxy resin. The reflection member 72 is formed with a through hole 72a in a central portion. Preferably, the inner peripheral surface of the through hole serves as a reflective surface 72b for effectively reflecting light emitted from the light emitting element 75 and the phosphor. The reflective surface 72b is the same as the second embodiment of the present invention, and description thereof is omitted. Also, the arithmetic mean roughness of the surface of the reflective surface 72b "is the second 95381 of the present invention. doc -47- 1245436 can be applied in the same manner, and can be from 0.04 to 4 μm. Therefore, the reflecting surface 72b can reflect the light of the light emitting element 75 and the phosphor well. The longitudinal cross-sectional shape of the reflecting surface 72b includes, for example, the shape of a linear inclined surface shown in FIG. 11 that expands outward as it goes upward, a curved inclined surface or rectangular surface that expands outward as it goes upward. As described above, the light-emitting element storage package of the present invention is configured by placing the light-emitting element on the mounting portion 71a, and electrically connecting the conductive layer 77 with a conductive adhesive material, and covering the light-emitting element with a light-transmitting member 73. Thus, a light emitting device 70 is formed. The translucent member 73 of the present invention is made of a transparent resin such as epoxy resin or silicone resin. The translucent member 73 is filled with an injection machine such as a dispenser into the inside of the reflective member 72, and is heat-cured with a baking oven or the like so as to cover the light-emitting element 75. Furthermore, the translucent member 73 may include a light-emitting element 75 A phosphor that converts light to wavelengths. The top surface of the light-transmitting member 73 may be a convex shape as shown in Fig. 11. This makes it possible to make the light emitted from the light emitting element 75 in various directions approximate the length of the light path through the light-transmitting member 73, and it is possible to effectively suppress the occurrence of unevenness in radiation intensity. Fig. 14 is a sectional view showing a light emitting device 80 of a ninth embodiment of the present invention. The light emitting device 80 is mainly composed of a base body 81, a reflecting member 82 as a frame body, a light transmitting member 83, a conductive layer 87, and a convex portion 89. The light emitting element housing package of the present invention includes a base body 81, a frame-shaped reflective member 82, and a conductive layer 87. The base 81 has a protruding portion 81b 95381 protruding from above. The mounting portion 8 1 a having a light emitting element 85 on doc -48 · 1245436. The reflecting member 82 is bonded to the upper surface of the base body 81 so as to surround the mounting portion 81a, and the inner peripheral surface serves as a reflecting surface 82b that reflects light emitted from the light emitting element 85. The conductive layer 87 is formed on the mounting portion 8la. The light emitting element 85 is electrically connected to the conductor layer 87 via a conductive adhesive material 88. The conductor layer 87 is surrounded by a convex portion 89 made of an insulator. A wiring conductor is provided in the package. One end of the wiring conductor is formed on the upper surface of the base body 8 i and is electrically connected to the electrode of the light emitting element 85, and the other end is led out to the side or the lower surface of the base body 81. That is, one end of the wiring conductor becomes the conductor layer 87. Therefore, the reflecting surface 82a of the reflecting member 82 can be reflected well from the side of the light emitting element S5 to the lateral and obliquely downward direction. The joint or base of the wheel 82 and the base 81 The surface absorption of 81 can be reflected by the reflecting member 82 at a desired rounding angle and radiated well to the outside. As a result, the radiation intensity of the light emitted from the light emitting device 80 can be increased and stably maintained. Furthermore, since the protruding portion 8 lb is formed so that the mounting portion 8 1 a is separated from the upper surface of the base body 81, the mounting portion 8 ia and the lower end of the reflecting member 82 can be reliably insulated. Therefore, the lower end of the reflecting member 82 can be made closer to the mounting portion 81a when viewed from a plane, and the light emitted from the light emitting element 85 can be more well reflected by the reflecting surface of the reflecting member 82. In addition, the convex portion 89 made of an insulator can be used to prevent the conductive adhesive material 88 from leaking out of the conductive layer 87, the thickness of the conductive adhesive material 88 can be made uniform, and the light-emitting element 85 can be horizontally placed on the conductive layer 87. on. As a result, light can be emitted from the light emitting element 85 at a desired radiation angle, and 95381 can be used. doc 1245436 The reflecting member 82 reflects the light emitted from the light emitting element 85 at a desired radiation angle and radiates it to the outside, so that the radiation intensity of the light emitted from the light emitting device can be enhanced. In addition, the light-emitting element 85 can be horizontally placed on the conductive layer 87, so that the heat generated from the light-emitting element 85 can be efficiently radiated to the outside through the conductive adhesive material 88 and the base body 81 without deviation. As a result, the temperature of the light emitting element 85 can be stably maintained, and light emitted from the light emitting element 85 can be stably maintained in a high state. Furthermore, it is possible to effectively prevent the light emitted from the light emitting element 85 from being radiated to the conductive adhesive material 88 by the convex portion 89, and it is possible to effectively prevent the radiation intensity generated by the light emitted from the light emitting device Koda being absorbed by the conductive adhesive material. Reduction, redundancy, or color reproducibility. Thus, a light-emitting device having high radiation intensity and excellent light-emitting characteristics can be provided. The base body 81 in the present invention is made of alumina ceramics, sintered aluminum nitride materials, sintered mullite materials, ceramics such as glass ceramics, or resins such as epoxy resins. In addition, the base body 81 has a mounting portion 81a on which a light emitting member 85 is mounted on a protruding portion 81b protruding from the upper surface. When the substrate 81 is made of ceramic, the average particle diameter of the crystal grains of the ceramics is preferably 1 to 5 μm, as in the above embodiment. The protruding portion 81 b may be integrated with the base body 81. In this case, it can be formed by a known ceramic green sheet lamination method, cutting processing, die molding, or the like. In addition, as for the protruding portion 81b, the cube-shaped protruding portion 81b can be bonded to the upper surface of the base body 81 by brazing or an adhesive. Examples of such a projection 8 lb include ceramics or resins, glass, inorganic crystals, and metals. 95381. doc -50- 1245436 A conductive layer 87 is provided on the mounting portion 81a to fix and fix the light emitting element 85 on the substrate ", and is electrically connected to the light emitting element 85. This conductor layer 87 is formed by a wiring conductor formed inside the substrate 81 (in the figure) (Not shown) is led to the outer surface of the light emitting device 80. By connecting the lead-out portion of the outer surface of the light emitting device to an external circuit board, the light emitting element 85 is electrically connected to the external circuit. The conductor layer 87 is on the base 81 When the substrate 81 is made of ceramics, a metal paste made of W, Mo-Mn, Cu, Ag, or the like that becomes the conductive layer 87 is sintered on the upper surface of the substrate 81 at a high temperature. When the substrate 81 is made of resin, A die made of Cu or Fe-Ni alloy is formed in a mold and fixed inside the base body 81. The convex portion 89 is formed around the conductor layer 87. When the base body 81 is made of ceramic, for example, the convex portion 89 passes through The ceramic paste, which is mainly composed of the material forming the base 8 丨, is printed and coated with the metal paste that becomes the conductive layer 87 and sintered at high temperature. When the base 81 is made of resin, for example, the convex portion 89 is made of The body 81 is made of the same material as the base body 81 and is formed by mold molding. In addition, the convex portion 89 may be the same material as the base body 8 and may be different. In this way, an insulator is formed around the conductor layer 87. The convex portion 89 can prevent the conductive adhesive material 88 from leaking out of the conductive layer 87 by using the convex portion 89. The thickness of the conductive adhesive material 88 can be made uniform, and the light emitting element 85 can be horizontally placed on the conductive layer 87. As a result, light can be emitted from the light emitting element 85 at a desired emission angle, and the light emitted from the light emitting element 85 can be reflected at a desired radiation angle and radiated to the outside, so that the light emitting device 95381 can be made. doc 51 1245436 The intensity of radiant light increases. In addition, the light emitting element 85 can be horizontally placed on the conductive layer 87, so that the heat generated from the light emitting element 85 can be efficiently radiated to the outside through the conductive adhesive material 88 and the substrate 81 without deviation. As a result, the temperature of the light-emitting element 85 can be kept constant at all times, and the light emitted from the light-emitting element 85 can be stably maintained in a high state. Furthermore, it is possible to effectively prevent the light emitted from the light emitting element 85 from being radiated to the conductive adhesive material 88 by the convex portion 89, and it is possible to effectively prevent the light emitted from the light emitting device Koda from being absorbed by the conductive adhesive material 88 to generate radiation intensity. Decreased, reduced color, or reduced color reproducibility. Thus, a light-emitting device having high radiation intensity and excellent light-emitting characteristics can be provided. The convex portion 89 may or may not cover the outer peripheral portion of the conductive layer 87. In addition, when there are multiple conductive layers 87, as shown in FIG. 15A, the convex portions 89 may be formed on the entire circumference of each conductive layer 87, or may be formed only on multiple conductive layers 87 as shown in FIG. 5B. Formed around the aggregate. As shown in FIG. 16A, the exposed portion of the conductive layer 87 may be located outside than the outer periphery of the light-emitting element 85. Preferably, as shown in FIG. 16B, the exposed portion of the conductive layer 87 is more than the outer periphery of the light-emitting element 85. Also on the inside. This can prevent the conductive adhesive material 88 for bonding the conductive layer 87 and the light emitting element 85 from being exposed between the conductive layer 87 and the light emitting element 85, and can effectively prevent the light emitted from the light emitting element 85 from being radiated to the conductivity. Adhesive material 88. As a result, the light emitted from the light emitting element 85 can be prevented from being absorbed by the conductive adhesive material 88 or reflected as light with low radiation intensity. The light intensity of the Kota light emitted from the light emitting device can be turned into a state, and brightness or color can be made. Reproduction 95381. doc -52- 1245436 (The structure of the outer layer of the conductive layer 87 is located inside the outer part of the light emitting element 85 than the outer portion of the light-emitting element 85. Therefore, the structure of the mounting portion can be reduced to further reduce the size of the reflecting member. In addition, the base body 81 can be miniaturized by being combined with 82 g of the reflecting member, which can further reduce the overall size of the package for accommodating the light-emitting element. Furthermore, even if the light emitted from the light-emitting element 85 is ultraviolet light, it is conductively bonded. The material 8 is not deteriorated, and the bonding strength between the conductive layer 87 and the light-emitting element μ can be the same, and the light-emitting element 85 can be firmly fixed to the conductive layer 87 for a long time. As a result, the electrode 86 and the conductive layer of the light-emitting element 85 can be made. The electrical connection of 87 is long-term and reliable, which can prolong the life of the light-emitting device. In addition, the side of the convex portion 89 is inclined to expand outward toward the "side" of the base body. With this structure, the side surface of the convex portion 89 and the base body Η The air in the upper corner of the upper part is easy to escape, which can prevent air from entering the corner, and can effectively prevent production on the conductive adhesive material 88 and the light-transmitting member 83. Occurrence of voids, peeling or cracking due to expansion of air in the voids due to temperature changes, etc. χ 'Using the inclined side surface outside the convex portion 89 can reflect light to the upper side well, and can improve luminous efficiency. In the same manner as in the embodiment, it is preferable that the reflectance of the convex portion 89 with respect to light emitted from the glare body included in the light-emitting element 85 and the light-transmitting member 83 is 60% or more. The light-emitting element 85 is an electrode provided on the lower surface thereof. The connection is made by a conductive adhesive material such as a paste, gold (Au) -tin (Sn) solder, and the like. As in the second embodiment of the present invention, the thickness of the conductive layer 87 is preferably two or 20 μηι. Would like to see metals with excellent corrosion resistance such as Au or 95381. doc • 53-1245436 covers the exposed surface. The reflecting member 82 is mounted on the upper surface of the base 81 using a solder material such as solder or Ag solder, or a bonding material such as an epoxy resin. The reflection member 82 is formed with a through hole 82a in a central portion. Preferably, the inner peripheral surface of the through-hole "a" is formed as a reflective surface 82b that effectively reflects light emitted from the light emitting element 85 and the phosphor. The reflective surface 82b is formed in the same manner as the second embodiment of the present invention, and description thereof is omitted. The arithmetic average roughness Ra of the surface of the reflecting surface 82b can be from 0.004 to 4 μm, similarly to the second embodiment of the present invention. Therefore, the reflecting surface 82b can reflect the light of the light emitting element 85 and the phosphor well. In addition, the reflection surface 82b includes, for example, the shape of its longitudinal cross-section, such as a linear inclined surface as shown in FIG. 14 that expands outward as it goes upward, a curved inclined surface or rectangular surface that expands outward as it goes upward. As described above, the light-emitting element storage package of the present invention is configured to place the light-emitting element 85 on the mounting portion 8a, and electrically connect the conductive layer 87 with the conductive adhesive material 88, and cover the light-emitting with the light-transmitting member 83. The element 85 forms the light emitting device 80. The translucent member 83 of the present invention is made of a transparent resin such as epoxy resin or silicone resin. The translucent member 83 is filled with an injection machine such as a dispenser. The reflective member 82 to the inside, and a heat curing oven, etc., so as to cover the light emitting element 85 billion Furthermore, the translucent member 83 may contain a light-emitting element may be a wavelength conversion phosphor. 9,538,185 to. doc -54- 1245436 The upper surface of the light-transmitting member 83 may have a convex shape as shown in FIG. 14. This makes it possible to make the light emitted from the light emitting element 85 in various directions approximate the length of the light path passing through the translucent member 83, and it is possible to effectively suppress the occurrence of unevenness in radiation intensity. Fig. 17 is a sectional view showing a light emitting device 90 of a tenth embodiment of the present invention. The light-emitting device 90 is mainly composed of a base 91, a reflective member 92, a light-transmitting member 93 containing a phosphor 94, and a light-emitting element 95. This light emitting device 90 can direct light from the light emitting element 95 and emit light to the outside. The base body 91 in the present invention is made of alumina ceramic, aluminum nitride sintered body, mullite sintered body, glass ceramic or other ceramic or epoxy resin, or Fe-Co alloy, Cu-W, A1, etc. Made of metal. The base 91 has a function of placing and fixing a reflecting member 92 having a mounting portion 92d on which the light-emitting element% is mounted on the upper main surface. When the substrate 91 is made of ceramics, the average particle diameter of the crystal grains of the ceramics is preferably 1 to 5 μm, as in the above embodiment. The reflecting member 92 is mounted on the base 91 using a solder material such as solder or Ag solder or a bonding material such as an adhesive such as epoxy resin. On the reflecting member 92, a convex mounting portion 92b on which the light emitting element 95 is placed on the upper portion is formed on the center portion of the upper main surface. Further, on the reflecting member 92, a side wall portion 92a is formed on the outer peripheral portion of the upper main surface and surrounds the mounting portion 92b and uses the peripheral surface as a reflecting surface 92c for reflecting light emitted from the light emitting element 95. As a result, not only the light from the light emitting element 95 can be wavelength-converted by the phosphor 94 and directly radiated to the outside, but also light emitted from the light emitting element 95 to the lateral direction or the like can be emitted by the reflecting surface 92c or emitted from the phosphor 94. The light to the outside is 95381 uniformly. doc -55- 1245436 reflection, can effectively make the brightness and brightness on the axis _ * to shirt color reproducibility, etc. 〇 reflection member 92 is made of alumina ceramics, nitrided sintered body, mullite sintered body Ceramics such as glass ceramics, resins such as epoxy resins, or Fe-Ni-C. It is made of metal such as alloy, Cu-W, and A1, and is formed by cutting, mold forming, or the like. Further, the reflective surface 92c 'can be formed by performing cutting or mold forming on the inner peripheral surface of the side wall portion 92a of the reflective member%, or by using, for example, electric ore or steam ore on the inner peripheral surface of the side wall portion 92 & A, Ag, Au, platinum (Pt), titanium osmium, osmium, Cu and other highly reflective metal thin films to form a reflective surface. When the reflective surface 92c is made of a metal that easily discolors due to oxidation such as Ag or Cu, it is preferable to use t-deposition plating or non-t-deposition plating on the surface as in the second embodiment of the present invention. It is sequentially covered with, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0 to 3 μm. This can improve the corrosion resistance of the reflecting surface 92c. In addition, like the second embodiment of the present invention, the arithmetic mean roughness Ra of the surface of the reflective surface _ 92b is preferred. In this way, the reflecting surface 92c can reflect the light called the light emitting element 95 and the phosphor well. The reflection surface 92c includes, for example, a linear shape of the light-emitting devices 90 and 90A of the tenth embodiment and the eleventh embodiment of the present invention shown in FIG. 17 and FIG. The shape of an inclined surface, a curved inclined surface that expands outwards toward the upper side, or a rectangular surface of the light emitting device 90B of the twelfth embodiment of the present invention shown in FIG. 19, and the like. 95381. doc -56- 1245436 The reflecting surface 92c of the present invention is located at the light path 99 connecting the corners between the upper surface 92d and the side surfaces of the light emitting portion 98 and the mounting portion 92b at the lower end of the light emitting element%, or is located at or more than the light path 99 Underside. Thus, the reflecting surface 92c can effectively reflect the direct light that emits light from the light emitting element 95 in the lateral or lower direction, and the intensity of the radiated light can be made extremely high. Furthermore, the light emitting element 95 is placed on the upper surface 92d of the mounting portion 92b, and the electrode of the light emitting element 95 and the electrode pad formed on the upper surface 92 (1 of the mounting portion 92b) or a part of a wiring conductor formed on the base 91 The electrode pads are electrically connected. The electrode pads are led out to the outside of the light-emitting device 90 (side and bottom of the base 91) through a wiring conductor (not shown) formed inside the base 91 and the reflective member 92. It is connected to an external circuit substrate. Thereby, the light-emitting element 95 and an external circuit can be electrically connected. Such electrode pads are formed by, for example, a metal such as W, Mo, Cu, or Ag, on the surface or inside of the base 91 or the reflective member 92. Layer, or by embedding pins such as Fe-Ni-Co alloy in the base 91 or the reflective member 92, or by inserting and joining input / output terminals made of an insulating member forming a wiring conductor to the base 91 and the reflective member It is provided with a through hole in 92. Furthermore, 'preferably, the electrode pad or the wiring conductor is coated with a metal having excellent corrosion resistance such as Ni or gold (An) to a thickness of about 1 to 20 μm. The exposed surface can effectively prevent oxidative corrosion of the electrode pads or wiring conductors, and can secure the connection between the light emitting element 95 and the electrode pads. Therefore, it is better to use electrolytic plating or electroless plating on the electrode pads or The exposed surface of the wiring conductor is sequentially covered with, for example, a Ni plating layer having a thickness of about i ~ 丨 0 μηι and an Au plating layer having a thickness of about 0.1 ~ 3 μηι. 95381. doc -57- 1245436 The side of the mounting portion 92b may be formed vertically toward the base 91 as shown in FIG. 17, and may be formed diffusely toward the base 91 as shown in FIG. 18. When formed in a diffused manner, the heat generated by the light emitting element 95 can be efficiently transmitted downward from the mounting portion 92b, the heat releasing property of the light emitting element 95 can be improved, and the workability of the light emitting element 95 can be maintained well. When the reflecting member 92 is an insulating member, as shown in FIG. 7, the light-emitting element 95 and the electrode pad formed on the upper surface 92 d of the mounting portion 92 b are flipped by using a metal protrusion (electrical connection mechanism 9 6) for bonding. Electrical connection. Although not shown in FIG. 17, if an electrode pad is formed on the reflecting member 92, a wire bonding method such as a gold wire (electrical connection mechanism 96) can be used. The preferred method is a flip-chip bonding method. Since the electrode pad can be disposed directly below the light-emitting element 95, it is not necessary to provide a space on the outer surface of the light-emitting element 95 on the base 91 to provide a pattern for electrical connection. As a result, light emitted from the light-emitting element 95 can be efficiently suppressed by being absorbed by the space for the pattern for electrical connection of the base 91, and the light intensity on the axis can be reduced. In addition, in the case where the base body 91 is an insulating member, as shown in FIG. 18, it is preferable that the main portion of the reflecting member 92 formed of an insulating member or a metal member is formed to penetrate through the upper and lower main surfaces and is larger than the optical path. The through-hole 97 located on the lower side, the electrode of the light-emitting element 95 and the wiring conductor on the base 91 are electrically connected by a lead wire (electrical connection mechanism 96) through the through-hole 97. Accordingly, the direct light emitted from the light-emitting element 95 is reflected by the reflecting surface 92c at a position higher than the through-hole 97 provided in the reflecting member 92 for passing the lead 96 ', and it is possible to effectively prevent the direct light from entering the through-hole 97. And being absorbed can increase the intensity of the radiant light. Also, the light emitting element 95 can be fully bonded to the reflection 95381. doc -58- 1245436 The mounting portion 92b of the member 92 can transmit the heat of the light emitting element 95 to the reflecting member well, and can further improve heat dissipation. The depth of the through hole 97 (i.e., the thickness of the bottom of the reflecting member 92) and the hole diameter of the through hole 97 are appropriately selected in consideration of the thermal expansion difference from the base body 91 and the thermal conductivity of the light emitting element 95. The thickness of the bottom of the reflecting member 92 can be appropriately selected even in the case shown in Fig. 17. In addition, by making the average grain size of the crystal grains contained in the ceramic 1 to 5 μηι, the reflectance of the base body 91 is increased, so that light can be effectively prevented from leaking out from the through-hole 97 formed in the reflective member 92 for passing through the wire 96. Instead, it is absorbed by the substrate 91. The through hole 97, as shown in the light emitting device 90C of the thirteenth embodiment of the present invention in FIG. 20, is preferably filled with an insulating paste 97a containing insulating light reflecting particles so as to communicate with the reflective member 92. The upper main surface is flush. Therefore, 'even if the light emitted from the light emitting element 95 and the phosphor 94 enters the through hole 97', it can be effectively reflected to the upper side by the light reflecting particles, and the light emission intensity of the light emitting device, the on-axis brightness or brightness, and color reproduction can be made. The optical properties such as properties are good. The light-reflecting particles contained in the insulating paste 97a are made of materials containing Ca, Ti, Ba, A, Si, Mg, and the like in the composition of barium sulfate, calcium carbonate, oxidized aluminum oxide, and the like. The total reflectance is more than 80%. This makes it possible to improve the light characteristics such as the radiant intensity, on-axis lightness or brightness, and color reproducibility of the light-emitting device. The light-transmitting 11 member 93 is made of a transparent resin such as epoxy resin, silicone resin, or glass. 3 A light-emitting body 94 is provided that can convert the wavelength of light from the light-emitting element 95. The light-transmitting member% is filled with reflection by an injection machine such as a dispenser 95381. doc 1245436 The inside of the member 92 is heat-cured with a baking oven or the like so as to cover the light-emitting member 95. Thereby, the light from the light emitting element% can be wavelength-converted by the phosphor 94 to extract light having a desired wavelength spectrum. In addition, the translucent member 93 is set so that the interval X between the upper surface and the light emitting element 95 of the light emitting element 95 is 0. 1 ~ 0. 5 mm. Accordingly, the phosphor 94 included in the light-transmitting member 93 with a constant thickness above the light-emitting portion of the light-emitting element 95 can efficiently perform wavelength conversion of the light emitted from the light-emitting element 95. The light can be directly emitted to the outside of the light-transmitting member 93 without being hindered by the phosphor 94. As a result, it is possible to increase the radiation intensity of the light-emitting device 'and to improve the optical characteristics such as on-axis brightness, brightness, and color reproducibility. As shown in FIG. 21, the distance X between the light-emitting portion of the light-emitting element 95 and the surface of the light-transmitting member 93 is 0. In the case of a length of 5 mm, although the phosphor 94 (the phosphor 94 indicated by the oblique line) adjacent to the light emitting element 95 can directly excite the light of the light emitting element 95 and perform wavelength conversion, it is difficult to convert the wavelength-converted light. Release directly to the outside of the light-transmitting member 93. That is, the phosphor 94 (the phosphor 94 other than the oblique line portion in FIG. 21) near the surface of the light-transmitting member 93 hinders the progress of light, making it difficult to make the brightness on the external axis good. On the other hand, as shown in FIG. 22, when the interval X between the light emitting portion of the light emitting element 95 and the surface of the light-transmitting member 93 is shorter than 0 · imm, it is difficult to efficiently perform light conversion by the wavelength conversion light emitting element 95. . Therefore, light with a low wavelength that passes through the translucent member 93 without undergoing wavelength conversion increases in visibility, and it is difficult to make the optical characteristics such as the brightness, brightness, and color reproducibility good. The top surface of the light-transmitting member 93 is preferably a convex shape as shown in Fig. 17. Thus, even for obliquely upward 95381 from the light emitting element 95. For the light emitted by doc -60- 1245436, the distance between the light-emitting portion and the surface of the light-transmitting member 93 may be 0 · 1 ~ 0. 5 mm can further increase the radiation intensity. In addition, the light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C of the present invention are configured so that one device has a predetermined configuration, or It is provided in a circular or polygonal shape, for example, a lattice or sawtooth shape, a radial shape, and a plurality of light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C. A plurality of groups of light-emitting devices are formed in a predetermined arrangement such as a concentric shape, so that a lighting device can be obtained. Therefore, since the light emission generated by the recombination of the electrons of the light-emitting elements 44, 55, 65, 75, 85, and 95 made of a semiconductor is used, it can consume less power and be more durable than a conventional lighting device using a discharge. It becomes a small lighting device with less heat generation. As a result, it is possible to suppress variations in the central wavelength of light generated from the light-emitting elements 44, 55, 65, 75, 85, and 95. The light can be irradiated with a stable radiation light intensity or radiation light angle (light distribution) for a long period of time. An illumination device capable of suppressing color unevenness and deviation of the illuminance distribution on the irradiation surface is provided. Moreover, the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C of the present invention are provided as a light source in a predetermined arrangement, and the light emitting devices 41, 5 〇, 60, 60a, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C are provided with reflective tools or optical lenses, light diffusion plates, etc., which are optically designed in any shape. It can be made into a lighting device that can radiate light with any light distribution. For example, as shown in the plan and cross-sectional views of FIGS. 23 and 24, a plurality of light-emitting clothes 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 95381 are placed. doc 1245436 90, 90A, 90B, 90C, arranged in multiple rows on the light-emitting device drive circuit substrate 101, and in the light-emitting devices 41, 50, 60, 60 people, 606, 60 (:, 60, 70, 80, 90 In the case where an illuminating device formed by a reflecting tool 100 having an optical design with an arbitrary shape is provided around 90A, 90A, 90B, and 90C, a plurality of light emitting devices 41, 50, 60, 60A, and Among 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C, it is preferable to make the adjacent light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, The so-called zigzag arrangement in which the intervals between 90A, 90B, and 90C are not shortest. That is, the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C are arranged. In the case of a grid, the light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C are arranged in a straight line so as to be dazzled. Enhancement. By making such a lighting device enter human vision, it is easy to cause unpleasant feelings or obstacles to the eyes. On the other hand, by making a zigzag shape, it is possible to suppress glare and reduce the discomfort to the human eye or the obstacle to the eye. Furthermore, by increasing the distance between the adjacent light-emitting devices 41, 50, 60, 60 A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C, it is possible to effectively suppress the adjacent light-emitting devices 41, Thermal interference between 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C, and suppression of light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80 , 90, 90A, 90B, and 90C of the light-emitting device driving circuit substrate 101 can prevent heat from flowing into the light-emitting device 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C external radiant heat. As a result, a long-term optical feature that is small even for the human eye can be produced. doc -62 · 1245436 Stable and durable (long life) lighting device. In addition, as for the lighting device, as shown in the plan and cross-sectional views of FIGS. 25 and 26, a plurality of light-emitting devices 41, 50, 60, 60A, 60B, 60C, and 60D will be provided on the light-emitting device driving circuit board 1a1a. In the case of a group of circular or polygonal light-emitting devices consisting of 70, 80, 90, 90A, 9OB, 90C, and a plurality of groups of concentric lighting devices, one is preferably arranged in a circular shape. The number of the light-emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C in the polygonal light-emitting device group is greater on the outer peripheral side than on the central side of the lighting device. many. Thereby, the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C can be kept at a proper distance while more light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, 90C can further increase the illuminance of the lighting device. In addition, the density of the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 90A, 90B, and 90C in the central portion of the lighting device can be reduced, and the light-emitting device drive circuit board can be suppressed. 1 0 1 a The thermal obstruction in the central part. As a result, the temperature distribution in the driving circuit board 101a of the light-emitting device becomes the same, and heat can be efficiently transmitted to the external circuit board or the heat-absorbing device provided with the lighting device, and the light-emitting devices 41, 50, 60, 60A, and 6 can be suppressed. 〇b, 60C, 60D, 70, 80, 90, 90A, 90B, 90C temperature rise. As a result, the light emitting devices 41, 50, 60, 60A, 60B, 60C, 60D, 70, 80, 90, 9GA, 9GB, 9GC can be stable for a long time, and durable lighting devices can be manufactured. Examples of such lighting devices include general lighting 95381 for indoor or outdoor use. doc -63- 1245436 Lighting fixtures, chandelier, lighting fixtures for coin lamps, residential lighting fixtures, office lighting fixtures, shops |, display lighting fixtures, road lighting fixtures, induction light fixtures and Signal devices, stage and studio lighting equipment, advertising lights, lighting poles, underwater lighting lights, flasher lights, spotlights, emergency lighting embedded in electric poles, and emergency lighting fixtures , Electro-optical notices or dimming lights, automatic light-off devices, decorations, lighting switches, decorations, light switches, light sensors, medical lights, car lights, etc. [Examples] [Example 1] Examples of the light-emitting device 41 according to the first embodiment of the present invention will be described below. First, an oxidized ceramic substrate composed of crystal grains of various particle diameters that becomes the substrate 42 is prepared. In addition, a wiring conductor for electrically connecting the light-emitting element 44 and an external circuit board via an internal wiring formed inside the base body 42 is formed around the mounting portion 42 & where the light-emitting element 44 is mounted. In addition, the wiring conductor on the base 42 is formed of a metalized layer made of Mo-Mn powder into a circular pad having a diameter of 0 mm, and the surface is sequentially covered with a plating layer having a thickness of 3 ^ | 111 and a thickness of 2 μm. Αυ electric deposit. The internal wiring inside the base body 42 is formed by an electrical connection portion made of a through conductor, a so-called through hole. This through-hole is also formed of a metalized conductor made of Μο-Μη powder in the same manner as the wiring conductor. Next, the thickness of the near-ultraviolet light emitted by the Ag paste is 0. 〇8 mm light-emitting element 44 is mounted on the mounting portion 42a, and 95381. doc -64- 1245436 The light emitting element 44 is electrically connected to the wiring conductor. The next step is to use a dispenser to cover the light-emitting element material with a stone evening resin (translucent member 45) containing a phosphor that is excited by the light of the light-emitting 70 and 44 and emits yellow light, and heat-cured to produce The light emitting device 41 of the sample measured the light output. Furthermore, the filling ratio (mass%) of the phosphor to the silicone resin meter was uniformly dispersed. As the phosphor, an yttrium aluminate-based yellow light-emitting phosphor having an average particle diameter of 15 to 80 mm and having a garnet structure was used. # When the average grain size of the crystal grains of the ceramic of the substrate 42 is about 10, the light output is 14 mW. However, in the case where the average grain size of the crystal grains of the ceramic of the base body 42 is 1 to 5 μm, the light output is 17 mW, and the energy output of the light output is increased compared to the average grain size of the ceramic crystal grains is 10 μm & right. That is, compared with the case where the average particle diameter of the ceramic crystal grains is about 10 μm, the use of a substrate having an average particle diameter of the ceramic crystal grains of 5 to 5 μm can be considered to effectively inhibit entry into the interior of the substrate 42. The number of phosphors scattered by the light on the surface of the substrate 42 and irradiated by the light increases, and the light output increases. Also, in the case where the current value is increased in order to increase the light output of the light emitting device 41. It was also confirmed that the decrease in the luminous efficiency of the substrate with an average particle diameter of ceramics of 5 to 5 relative to the clockwise current can be effectively suppressed. 'Example 2' Next, the same structure as the above-mentioned example was produced and the substrate 42 was sintered. The average particle size of the crystal grains of the ceramic is 1 (μιγι), 5 (μηι), 10 (μηι). doc -65-1245436 measures the full beam (light output) with respect to the load current to the light-emitting element 44. Further, the light-emitting device 41 is installed in a heat-dissipating device having the same cooling function everywhere, and the light output is measured using an integrating sphere. The results are shown in Fig. 7. As shown in FIG. 27, when the rated current of the load current to the light-emitting element material is 20 (mA) and the rated voltage is 3 · 4 (ν), the average grain size of the crystal grains of the ceramic is 1 (μιη) The light output of the light emitting device 41 is 096 (lm), and the light emitting efficiency is 14 (lm / W). In addition, the light output of the light-emitting device 41 having an average grain size of 5 (μιη) of the crystal grains of the ceramic is 0. 8 (lm), and luminous efficiency was 12 (lm / w). In contrast, the light output of the light-emitting device 41 having an average particle diameter of 10 (μιη) of the ceramic crystal becomes 0. 55 (lm), luminous efficiency is 8 (lm / w). That is, the light output of the light-emitting device 41 at the rated current is 1 (μιη, 5 仏 111) compared to the average grain size of the crystal grains of the ceramic of the base body 42 (10 μm). The light output of the light emitting device 41 is increased by 45 to 74 (%). That is, the average particle diameter of the crystal grains of the ceramics of the base body 42 is set to 5 to effectively suppress light entering the interior of the base body 42, and the irregularities on the surface of the base body 42 are caused by the crystal grains of the ceramics to emit light. The light emitted by the component material is reflected in a state where it is almost complete. Therefore, by irradiating the phosphors filled in the housing 43 with uniform light intensity and increasing the number of phosphors irradiated with light, the probability of the phosphors excited by the light of the light emitting element 44 increases, and the phosphors are increased. The light conversion efficiency is improved. As a result, the light-emitting device 41 can be practically used as a light source for display or illumination of an incandescent lamp having a light emitting efficiency of 12 (Im / W) or more by making the average grain size of the crystal grains of the ceramics of the base body 42 to 1 to 5 μm. Into. In addition, in order to increase the light output of the light-emitting device 41, the load current is 95381. doc -66-1245436 states that when the average grain size of the crystal grains of the ceramics in the substrate 42 is large, a rise in light output that is positive for the load current cannot be seen in the vicinity of a current value lower than 10G (mA). In contrast to this, by reducing the plain grain size of the refined crystal grains, the light output rises to a large current in proportion to the current. In particular, the light-emitting device 4 is made to have an average particle diameter of j μιη. The light output of j rises proportionally to near 丨 m 0A. That is, by reducing the average particle diameter of the ceramic crystal grains of the base body 42, the thermal diffusivity inside the base body 42 can be improved, the temperature rise caused by the load current of the light-emitting element 44 can be suppressed, and the degradation of the light-emitting element's light-emitting efficiency can be suppressed. . Furthermore, when "the peak wavelength of the light-emitting element 44 with respect to the load current of the light-emitting device 4" was changed, the average particle diameter of the crystal grains of the ceramic was changed, and the light-emitting device 41 was manufactured and measured. The average particle diameter of the particles is 1 μm, so that the fluctuation of the peak wavelength of the light-emitting element 44 is reduced. This can suppress the conversion efficiency of the phosphor depending on the peak wavelength of the light emitting element. Further, when the light emitting device 41 is composed of a plurality of phosphors having different excitation spectra, it is possible to suppress variations in the conversion efficiency of the phosphors due to variations in the peak wavelength of the light emitting element 44. As a result, it is possible to suppress a change in the color of light of the light emitting device 41 in which excitation light from a plurality of phosphors is mixed and output. For example, when the phosphor is composed of a red phosphor, a blue phosphor, and a green phosphor, and the peak wavelength of the light-emitting element 44 varies depending on the load current, the red phosphor, the blue phosphor, and the green The light emission intensity of the phosphor is changed by the peak wavelength of the light emitting element 44 with its own characteristics, and is output by the light emitting device 41. That is, the ratio of the light intensity in the mixed light of the excitation light from the red phosphor, the blue phosphor, and the green phosphor becomes 95381. doc • 67-1245436, the hue of the output light changes, and the light of the desired hue cannot be obtained. Since the average grain size of the crystal grains of the ceramics of the substrate 42 is J μη, it is possible to suppress fluctuations in the peak wavelength of the light-emitting element 44 and suppress changes in the color fade of the output light, and it is possible to produce stable light-emitting characteristics and lighting characteristics. Suitable for lighting or display light-emitting devices. Example 3 According to FIG. 7 ′, a light-emitting device 600 according to a sixth embodiment of the present invention is shown below. First, an alumina ceramic substrate serving as a base 61 is prepared. Further, the base 61 is integrally formed. The convex portion 61b having the mounting portion 61a is arranged so that the upper surface of the mounting portion 61a is parallel to the upper surface of the base body 61 in a place other than the mounting portion 61a. The base body 61 is on the upper center portion of a cylindrical plate having a diameter of 0.8 mm x thickness of 0.5 mm A cylindrical convex portion 611 having a diameter of 0.4 mm × thickness (various values) was formed). Further, a pattern for electrical connection for electrically connecting the light-emitting element 65 to an external circuit board is formed on the mounting portion 61a on which the light-emitting element 65 is placed on the convex portion 61b by internal wiring formed inside the base 61. The pattern for electrical connection is made of a metallized layer made of Mo-Mn powder into a circular pad with a diameter of 0.1 mm. The surface is sequentially covered with a Ni plating layer with a thickness of 3 μm and an Auv plating layer with a thickness of 2 μm. The internal wiring inside the base body 61 is formed by an electrical connection portion formed of a through conductor, a so-called through hole. The through-holes were also formed from metallized conductors made of Μο-Μ powder in the same manner as the pattern for electrical connection. In addition, a joint portion for joining the base body 61 and the reflecting member 62 with An-tin (Sn) solder is formed on the entire portion except the convex portion 61b on the upper surface of the base body 61. The joint is coated with a thickness of 3 95381 on the surface of the metallized layer made of Μο · Μη powder. doc -68- 1245436 μm Ni plating and 2 μm Au plating. Furthermore, a reflection member 62 was prepared. The reflecting member 62 has a through hole 62a having a rectangular inner peripheral surface in a longitudinal section as shown in Fig. 7, and the surface of the inner peripheral surface of the through hole 62a is a reflecting surface 62b having Ra of 0.1 µm. In addition, the reflecting member has a diameter of 0.8 mm, a height of 1.0 mm, a diameter of the upper opening of 0.8 mm, a diameter of the lower opening of 0.5 mm, and a lower end of the reflecting surface 62b. The height (thickness L of the reflecting member 62 around the lower opening) is a cylindrical shape of 0.15 mm. Renzhi 'does not place Au-Sn protrusions (electrodes 66) in the light-emitting element 65 with a thickness of 0 · ⑽mrn that emits near ultraviolet light. The Au_Sn protrusions are used to bond the light-emitting element 65 to the pattern for electrical connection, and Au_Sn solder is used. The reflecting member 62 is bonded to a bonding portion on the upper surface of the base 61. The light emitting portion 69 of the light emitting element 65 and

Au-Sn突起的下面的高度，即從安放部61a到發光部的的高 度約爲0.03 mm。 次之’通過用分配器將含有進行紅色發光、綠色發光、 藍色發光的3種螢光體64的矽樹脂（透光性構件63)一直填充 到被基體61和反射構件62包圍的區域的反射構件62的内周 面的最上端，從而做成作爲樣本的發光裝置60C。 而且，通過將凸部61b的厚度做成各種值，從而改變發光 元件65的發光部距離基體61的高度用凸部61b的 厚度和從安放部61a到發光部69的高度〇.〇3 mm的和表 示）。而且，發光元件65的發光部69和透光性構件63的上面 的間隔X(mm)可以用從作爲透光構件63的上面與基體61的 距離的1.0 mm中減去H(mm)的值來表示。 95381.doc -69- 1245436 在圖28中示出測定了相對Η及X的各樣本的軸上光度的 釔果。根據圖28的曲線圖，可知：相對於Η爲〇」〜〇15 mm 時（發光部爲反射面62b的下端62c的高度〇15 mm以下時）軸 上光度小的情況，若Η變爲〇·16 mm以上（發光部比反射面 62b的下端62c的高度〇15 mm大），則軸上光度變得非常良 好。此乃因爲通過使發光部69比反射面62b的下端62c的高 度還高，從而可以用反射面62c良好地反射來自發光元件65 的光，反射效率變高的緣故。 進而，可知雖然增大Η時，轴上光度平穩地增大，但在χ 爲0·1〜0·5 mm時軸上光度顯著提高。此乃因爲通過使發光 部69與透光性構件63的上面的間隔成爲適度的大小，從而 從發光元件65發光的光由螢光體64以高的效率進行波長變 換，不會被其餘的螢光體64妨害，以高效率放出到透光性 構件63的外部。又，確認出該轴上光度顯著提高了的樣本 即使針對亮度或彩色再現性等也足夠。 【實施例4】 針對本發明的第十二實施方式的發光裝置9〇B，以下根據 圖19、圖29、圖30示出實施例。 首先，準備由外形爲2.5x0.8 mm、厚度爲（Μ mm的四邊 形的板構成的氧化鋁陶瓷基板以作爲基體91。又，至於反 射構件92 ’係準備由外形爲2·5χ〇·8 _、厚度爲〇 4 _的 四邊形，在上側主面的中央部上具有直徑爲L(mm)的圓柱 狀的安放部92b，位於安放部92b周圍的部位的厚度（上側主 面與下側主面之間的距離）爲〇·2 mm，在外周部具有距離下 95381.doc -70- 1245436 側主面的高度爲LO mm(距離上側主面的突出高度〇·8 mm)、橫向厚度爲〇·2 mm的框狀的側壁部92&的八丨構成的構 件。而且’側壁部92a的與基體91垂直的内周面作爲算術平 均粗糙度Ra爲〇·ΐ μηι的反射面92c。 又’從上面看，在四邊形的反射構件92的長邊方向上， 在安放部92b兩侧的安放部92b與側壁部92a之間的部位上 每隔1個從上側主面到下側主面形成了貫通反射構件92的 貫通孔97。 接下來，在基體91的上面的對應於貫通孔97底部的部位 的上，利用Mo-Mn粉末構成的金屬化層將由配線導體的一 部分構成的電極形成爲直徑〇·1 mm的圓形。而且，其表面 上依次被覆了厚度3 μηι的Ni電鍍層和厚度2 μιη的Au電鍍 層又，基體91内部的配線導體通過由貫通導體構成的電 連接部、所谓的通孔形成。對於該通孔，也與電連接用圖 案同樣，用由Mo-M粉末構成的金屬化導體成型。 此外，在基體91的上面的外周部上，在整周形成利用Au_ 錫（Sn)焊料接合基體91和反射構件92用的接合部。該接合 部係在由Mo-Mn粉末構成的金屬化層的表面上被覆厚度3 μηι的Ni電鑛層和厚度2 μηι的Au電鑛層。 接著，用Αιι-Sn焊料將發出近紫外光的厚度爲〇〇8 mm的 發光元件95接合在安放部92b的上面92d上，並且ffiAu_Sn 焊料將反射構件92接合在基體91上面的接合部上，進而用 金線引線接合發光元件95和位於貫通孔97底部的電極並電 連接。 95381.doc 71 1245436 而且’通過用分配器將含有進行紅色發光、綠色發光、 藍色發光的3種螢光體94的矽樹脂（透光性構件93)—直填充 到被基體9 1和反射構件92包圍的區域的反射構件92的内周 面的最上端，從而做成作爲樣本的發光裝置90B。 又’發光元件95的發光部98距離基體91的高度H(mm)， 通過改變安放部92b的高度，從而可以取各種值。透光性構 件93的上面與發光部之間的距離x(mm)用χ= 1〇_H表示。 又’如圖29所示，通過改變安放部92b的直徑L，從而可以 改變連接發光部與安放部92b的上面92d及侧面之間的角的 光路線99的角度。 在圖30中示出測定了相對於l及X的值的各樣本的軸上 光度的結果。根據圖30的曲線圖可知：軸上光量通過l與X 的關係而表現出光量的高低。即，在L不滿〇·3 mm的情況 下’考慮到光路線99比連接發光部98和反射面92c的下端的 線還位於下側，來自發光元件95的直接光不向反射面92c傳 遞而係侵入到貫通孔97内部，從而反射效率降低。 此外，在L爲0.3 mm以上的光路線比連接發光部98與反射 面92c的下端的線還位於上側的情況下，即直接光不入射到 貫通孔97的情況下，可知轴上光度在X爲〇.1 mm〜0.5 mm 時顯著增大爲500 mcd。考慮此係因爲通過使發光部98與透 光性構件93的上面的間隔X爲適度大小，從而從發光元件95 發光的光由發光體94以高效率進行波長變換，不會被其餘 的螢光體94所妨害，可以以高效率放出到透光性構件93的 外部的緣故。 95381.doc -72- 1245436 槌以上其結果可以確認：在反射面92c的下端位於連接發 光部98和安放部92b的上面92d及側面之間的角的光路線上 或比光路線還位於下側，並且透光性構件93的上面與發光 部98之間的距離爲〇.1〜〇·5 mm的情況下，顯示極爲優越的 軸上光度。而且，可以確認出該軸上光度顯著提高的樣本 即使對於亮度或彩色再現性等也是足夠的。 而且，本發明並不限於第--第十三實施方式及實施 例，可以在不脫離本發明的宗旨的範圍内進行各種變更。 在本發明的第一實施方式中，例如用焊錫或黏接劑等將可 以係由發光裝置41放出的光任意聚光或擴散的光學透鏡或 平板狀的透光性蓋體接合在框體43的上面。由此，可以以 所希望的角度取出光，並且可以改善向發光裝置41的内部 的耐浸水性’提高長期可靠性。又，框體43的内周面，其 剖面形狀可以係平坦（直線狀）或圓弧狀（曲線狀）。在做成圓 弧狀的情況下，可以使從發光元件44發光的光普遍反射， 將指向性高的光均勻地反射到外部。又，在本發明的第一 〜第十二實施方式中，爲了提高光輸出，可以在基體42、 51、61、71、81、91上設置多個發光元件44、55、65、乃、 85、95。又，也能任意調整反射面43b、52b、62b、72b、 82b、92c 的角度或從反射面 43 b、52b、62b、72b、82b、92e 的上端到透光性構件45、53、63、73、83、93的上面的距 離由此通過$又置互補色區域’從而進一步可以得到良 好的彩色再現性。 此外，本發明的照明裝置不僅係將多個發光裝置4 1、50、 95381.doc •73· 1245436 60、60A、60B、60C、70、80、90、90A、90B、90C設置 爲規疋的配置’也可以將丨個發光裝置4ι、5〇、6〇、6〇A、 60B、6GC、6GD、7G、8G、9G、9GA、9GB、9GC設置爲規 定的配置。 本發明在不脫離其宗旨或主要特徵之前提下，可以以各 種方式實施。因此，上述實施方式在某一點上來說僅係示 例，本發明的範圍係申請專利範圍中所公開的，並未局限 於”兒明書全文。進而，屬於申請專利範圍的變形或變更全 部皆係在本發明的範圍内。 【圖式簡單說明】 圖1係表不本發明的第一實施方式的發光裝置的剖面圖。 圖2係表示本發明的第二實施方式的發光裝置的剖面圖。 圖3 A係表示本發明的發光裝置中的導體層及凸部的一例 的放大平面圖’圖沾係表示本發明的發光裝置中的導體層 及凸部的其他例的放大平面圖。 圖4係表示本發明的第三實施方式的發光裝置的剖面圖。 圖5係表不本發明的第四實施方式的發光裝置的剖面圖。 圖6係表不本發明的第五實施方式的發光裝置的剖面圖。 圖7係表示本發明的第六實施方式的發光裝置的剖面圖。 圖8係用來說明本發明的發光裝置中的透光性構件的上 面與發光部的間隔的剖面圖。 圖9係用來言兒明的本發明的發光裝i中的透光性構件的 上面與發光部的間隔的剖面圖。 圖1〇係表不本發明的第七實施方式的發光裝置的剖面 95381.doc -74- 1245436 圖。 圖11係表示本發明的第八實施方式的發光裝置的剖面 圖。 圖12A係表示本發明的發光裝置中的導體層及凸部的一 例的放大平面圖，圖12B係表示本發明的發光裝置中的導體 層及凸部的其他例的放大平面圖。 圖13A係表示本發明的發光裝置中的導體層及凸部的一 例的放大平面圖，圖13B係表示本發明的發光裝置中的導體 層及凸部的其他例的放大平面圖。 圖14係表示本發明的第九實施方式的發光裝置的剖面 圖。 圖15A係表示本發明的發光裝置中的導體層及凸部的一 例的放大平面圖，圖15B係表示本發明的發光裝置中的導體 層及凸部的另一例的放大平面圖。 圖16A係表示本發明的發光裝置中的導體層及凸部的實 施方式的一例的放大平面圖，圖16B係表示本發明的發光裝 置中的導體層及凸部的實施方式的其他例的放大平面圖。 圖17係表示本發明的第十實施方式的發光裝置的剖面 圖。 圖18係表不本發明的第十一實施方式的發光裝置的剖面 圖。 圖19係表不本發明的第十二實施方式的發光裝置的剖面 圖。 圖20係表不本發明的第十三實施方式的#光裝置的剖面 95381.doc 1245436 圖。 圖2 1係用來#日 "月本發明的發光裝置中的透光性構件的上 面與發光部的間隔的剖面圖。 圖22係用來說明本發明的發光裝置中的透光性構件的上 面與發光部的間隔的剖面圖。 圖23係表不本發明的第十四實施方式的照明裝置 圖。 圖24係圖23的照明裝置的剖面圖。 圖25係表示本發明的第十五實施方式的照明裝置的平面 圖。 圖26係圖25的照明裝置的剖面圖。 圖27係表示本發明的第一實施方式的發光裝置的強度測 定其結果的圖。 圖28係表示本發明第六實施方式的發光裝置中的透光性 構件的上面與發光部的間隔和發光強度的關係的曲線圖。 圖29係表示圖19的發光裝置中的光路線的各種圖案的剖 面圖。 圖30係表示本發明的發光裝置中的安放部的長度1、透光 性構件上面及發光部的間隔X和轴上光度的關係的曲線圖。 圖3 1係表示第一先前技術的發光裝置的剖面圖。 圖32係表示第二先前技術的發光元件收納用封裝的剖面 圖。 圖33係表示第三先前技術的發光裝置的剖面圖。 【主要元件符號說明】 95381.doc -76- 1245436 41，50, 60, 60A，60B，60C，發光裝置 60D，70, 80, 90, 90A，90B，The height of the Au-Sn protrusions, i.e., the height from the mounting portion 61a to the light-emitting portion is about 0.03 mm. Secondly, a silicone resin (light-transmitting member 63) containing three kinds of phosphors 64 that emit red light, green light, and blue light is filled with a dispenser to the area surrounded by the base 61 and the reflective member 62. The uppermost end of the inner peripheral surface of the reflection member 62 is a light emitting device 60C as a sample. In addition, by setting the thickness of the convex portion 61b to various values, the thickness of the convex portion 61b for the height of the light-emitting portion 65 from the base 61 and the height from the seating portion 61a to the light-emitting portion 69 of 0.3 mm are changed. And representation). The distance X (mm) between the light-emitting portion 69 of the light-emitting element 65 and the upper surface of the light-transmitting member 63 can be calculated by subtracting H (mm) from 1.0 mm, which is the distance between the upper surface of the light-transmitting member 63 and the base 61. To represent. 95381.doc -69-1245436 Fig. 28 shows the yttrium fruit having measured the photometric values on the axis with respect to each sample of europium and X. From the graph of FIG. 28, it can be seen that when the light intensity on the axis is small with respect to the case where Η is 0 ″ to 015 mm (when the light-emitting portion is the height of the lower end 62c of the reflective surface 62b or less than 0.15 mm), if Η becomes 〇 · At least 16 mm (the height of the light emitting portion is 15 mm higher than the lower end 62c of the reflecting surface 62b), the luminance on the axis becomes very good. This is because the light emitting portion 69 is made higher than the lower end 62c of the reflecting surface 62b, so that the light from the light emitting element 65 can be well reflected by the reflecting surface 62c, and the reflection efficiency becomes high. Furthermore, it can be seen that although the luminosity on the axis increases steadily when Η is increased, the luminosity on the axis is significantly increased when χ is from 0.1 to 0.5 mm. This is because the distance between the light-emitting portion 69 and the upper surface of the light-transmitting member 63 is set to a moderate size, so that the light emitted from the light-emitting element 65 is wavelength-converted by the phosphor 64 with high efficiency, and is not affected by the remaining fluorescent light. The light body 64 interferes and is emitted to the outside of the light-transmitting member 63 with high efficiency. In addition, it was confirmed that a sample with significantly improved luminosity on this axis is sufficient even for brightness, color reproducibility, and the like. [Example 4] A light-emitting device 90B according to a twelfth embodiment of the present invention will be described below with reference to FIGS. 19, 29, and 30. First, an alumina ceramic substrate composed of a quadrangular plate having an outer shape of 2.5 × 0.8 mm and a thickness of 1 μm is prepared as the base 91. As for the reflecting member 92 ′, an outer shape of 2.5 × 0 · 8 is prepared. The square with a thickness of 〇4 _ has a cylindrical mounting portion 92b with a diameter L (mm) at the center of the upper main surface, and the thickness of the portion around the mounting portion 92b (the upper main surface and the lower main surface The distance between the faces) is 0.2 mm, and the outer peripheral part has a distance of 95381.doc -70-1245436. The height of the main surface on the side is LO mm (the protruding height from the upper main surface is 0.8 mm), and the lateral thickness is A 0.2 mm frame-shaped side wall portion 92 & 8 ′. The inner peripheral surface of the 'side wall portion 92a which is perpendicular to the base body 91 is a reflection surface 92c whose arithmetic average roughness Ra is 0.ΐ μηι. 'Viewed from above, in the long-side direction of the quadrangular reflecting member 92, the portion between the mounting portion 92 b and the side wall portion 92 a on both sides of the mounting portion 92 b is formed every other portion from the upper main surface to the lower main surface. The through hole 97 penetrating the reflecting member 92 is provided. Next, on the upper surface of the base body 91 On the part corresponding to the bottom of the through-hole 97, a metalized layer made of Mo-Mn powder was used to form an electrode made of a part of the wiring conductor into a circular shape with a diameter of 0.1 mm. The surface was sequentially covered with a thickness of 3 The μn Ni plating layer and the 2 μm Au plating layer are formed by wiring conductors in the base 91 through electrical connections made of through-conductors, so-called through holes. This through hole is also the same as the pattern for electrical connection. It is molded with a metalized conductor made of Mo-M powder. In addition, on the outer peripheral portion of the upper surface of the base body 91, a joint portion for joining the base body 91 and the reflective member 92 with Au_Sn (Sn) solder is formed over the entire circumference. The surface of the metallized layer made of Mo-Mn powder is covered with a 3 μηι Ni electric ore layer and a 2 μηι Au electric ore layer. Next, the thickness of near-ultraviolet light emitted by the Ai-Sn solder is The light emitting element 95 of 0.8 mm is bonded to the upper surface 92d of the mounting portion 92b, and the reflective member 92 is bonded to the bonding portion above the base 91 by ffiAu_Sn solder, and the light emitting element 95 and The electrodes at the bottom of the through hole 97 are electrically connected. 95381.doc 71 1245436 Furthermore, a silicone resin (light-transmitting member 93) containing three types of phosphors 94 that emit red light, green light, and blue light is used by a dispenser. —The uppermost end of the inner peripheral surface of the reflection member 92 filled directly to the area surrounded by the substrate 91 and the reflection member 92, so as to make a light emitting device 90B as a sample. The light emitting portion 98 of the light emitting element 95 is further away from the base 91 The height H (mm) can take various values by changing the height of the mounting portion 92b. The distance x (mm) between the upper surface of the light-transmitting member 93 and the light-emitting portion is represented by χ = 10_H. As shown in FIG. 29, by changing the diameter L of the mounting portion 92b, the angle of the light path 99 connecting the angle between the light emitting portion and the upper surface 92d and the side surface of the mounting portion 92b can be changed. Fig. 30 shows the results of measuring the photometric values on the axis of each sample with respect to the values of 1 and X. According to the graph of FIG. 30, it can be seen that the amount of light on the axis expresses the amount of light by the relationship between l and X. That is, when L is less than 0.3 mm, it is considered that the light path 99 is located on the lower side than the line connecting the light emitting portion 98 and the lower end of the reflecting surface 92c, and direct light from the light emitting element 95 is not transmitted to the reflecting surface 92c. The system penetrates into the through-hole 97, and the reflection efficiency decreases. In addition, when the light path of L is 0.3 mm or more is located on the upper side than the line connecting the light emitting portion 98 and the lower end of the reflecting surface 92c, that is, when the direct light does not enter the through hole 97, it can be seen that the luminosity on the axis is X When it is 0.1 mm to 0.5 mm, it increases significantly to 500 mcd. This is considered because the distance X between the light-emitting portion 98 and the upper surface of the light-transmitting member 93 is appropriately adjusted, so that the light emitted from the light-emitting element 95 is wavelength-converted by the light-emitting body 94 with high efficiency, and is not affected by the remaining fluorescent light. Because the body 94 is disturbed, it can be released to the outside of the light-transmitting member 93 with high efficiency. 95381.doc -72- 1245436 The results above can be confirmed: the lower end of the reflecting surface 92c is located on or below the light path of the angle between the upper surface 92d and the side connecting the light emitting section 98 and the mounting section 92b. In addition, when the distance between the upper surface of the light-transmitting member 93 and the light-emitting portion 98 is 0.1 to 0.5 mm, the on-axis lightness is extremely excellent. In addition, it was confirmed that a sample with significantly improved luminance on this axis is sufficient even for brightness, color reproducibility, and the like. The present invention is not limited to the thirteenth to thirteenth embodiments and examples, and various changes can be made without departing from the spirit of the present invention. In the first embodiment of the present invention, for example, an optical lens or a flat plate-shaped light-transmitting cover that can condense or diffuse light emitted from the light-emitting device 41 is bonded to the frame 43 with solder, an adhesive, or the like. Above. Thereby, light can be taken out at a desired angle, and the water resistance to the inside of the light-emitting device 41 can be improved 'and long-term reliability can be improved. The cross-sectional shape of the inner peripheral surface of the frame 43 may be flat (straight) or arc-shaped (curved). In the case of an arc shape, light emitted from the light emitting element 44 can be generally reflected, and light with high directivity can be uniformly reflected to the outside. In addition, in the first to twelfth embodiments of the present invention, in order to improve the light output, a plurality of light emitting elements 44, 55, 65, and 85 can be provided on the substrates 42, 51, 61, 71, 81, and 91. , 95. The angle of the reflecting surfaces 43b, 52b, 62b, 72b, 82b, 92c or the upper end of the reflecting surfaces 43b, 52b, 62b, 72b, 82b, 92e to the light-transmitting members 45, 53, 63, The upper distances of 73, 83, and 93 can be used to set complementary color regions, thereby further achieving good color reproducibility. In addition, the lighting device of the present invention not only sets a plurality of light emitting devices 41, 50, 95381.doc • 73 · 1245436 60, 60A, 60B, 60C, 70, 80, 90, 90A, 90B, 90C as standard Configuration 'It is also possible to set one light emitting device 4m, 50, 60, 60A, 60B, 6GC, 6GD, 7G, 8G, 9G, 9GA, 9GB, 9GC to a prescribed configuration. The present invention may be implemented in various ways without departing from its spirit or main characteristics. Therefore, the above-mentioned embodiments are merely examples at a certain point, and the scope of the present invention is disclosed in the scope of patent application, and is not limited to the "full text of the Ming Dynasty." Furthermore, all the deformations or changes belonging to the scope of patent application are all It is within the scope of the present invention. [Brief description of the drawings] Fig. 1 is a cross-sectional view showing a light-emitting device according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view showing a light-emitting device according to a second embodiment of the present invention. 3A is an enlarged plan view showing an example of a conductive layer and a convex portion in a light-emitting device of the present invention. FIG. 3 is an enlarged plan view showing another example of a conductive layer and a convex portion in a light-emitting device of the present invention. A cross-sectional view of a light-emitting device according to a third embodiment of the present invention. FIG. 5 is a cross-sectional view of a light-emitting device according to a fourth embodiment of the present invention. FIG. 6 is a cross-sectional view of a light-emitting device according to a fifth embodiment of the present invention. Fig. 7 is a cross-sectional view showing a light-emitting device according to a sixth embodiment of the present invention. Fig. 8 is a diagram for explaining the upper surface of the light-transmitting member and the light-emitting part in the light-emitting device of the present invention. Fig. 9 is a cross-sectional view of the interval between the upper surface of the light-transmitting member and the light-emitting portion in the light-emitting device i of the present invention for clarity. Fig. 10 is a seventh embodiment of the present invention. Section of light-emitting device 95381.doc -74- 1245436 Fig. 11 is a cross-sectional view showing a light-emitting device according to an eighth embodiment of the present invention. Fig. 12A is an example of a conductive layer and a convex portion in a light-emitting device of the present invention. FIG. 12B is an enlarged plan view showing another example of the conductive layer and the convex portion in the light-emitting device of the present invention. FIG. 13A is an enlarged plan view showing an example of the conductive layer and the convex portion in the light-emitting device of the present invention. 13B is an enlarged plan view showing another example of the conductive layer and the convex portion in the light-emitting device of the present invention. FIG. 14 is a cross-sectional view of the light-emitting device according to the ninth embodiment of the present invention. FIG. 15A is a view showing the light-emitting device of the present invention. FIG. 15B is an enlarged plan view showing another example of the conductor layer and the convex portion in the light-emitting device of the present invention. FIG. 16A is a diagram showing the light emission of the present invention. An enlarged plan view of an example of an embodiment of a conductive layer and a convex portion placed in the center is shown in FIG. 16B, which is an enlarged plan view of another example of an embodiment of a conductive layer and a convex portion in the light-emitting device of the present invention. A cross-sectional view of a light-emitting device according to a tenth embodiment. Fig. 18 is a cross-sectional view illustrating a light-emitting device according to an eleventh embodiment of the present invention. Fig. 19 is a cross-sectional view illustrating a light-emitting device according to a twelfth embodiment of the present invention. Fig. 20 is a cross-sectional view of the # 光 装置 95381.doc 1245436 of the thirteenth embodiment of the present invention. Fig. 21 is an upper surface of a light-transmitting member used in the light-emitting device of the present invention. Cross-sectional view of the distance from the light-emitting portion. Fig. 22 is a cross-sectional view illustrating the distance between the upper surface of the light-transmitting member and the light-emitting portion in the light-emitting device of the present invention. Fig. 23 is a diagram showing a lighting device according to a fourteenth embodiment of the present invention. FIG. 24 is a cross-sectional view of the lighting device of FIG. 23. Fig. 25 is a plan view showing a lighting device according to a fifteenth embodiment of the present invention. FIG. 26 is a cross-sectional view of the lighting device of FIG. 25. Fig. 27 is a graph showing the results of intensity measurement of the light emitting device according to the first embodiment of the present invention. Fig. 28 is a graph showing the relationship between the distance between the upper surface of the translucent member and the light-emitting portion and the light-emission intensity in the light-emitting device according to the sixth embodiment of the present invention. FIG. 29 is a cross-sectional view showing various patterns of light paths in the light-emitting device of FIG. 19. FIG. Fig. 30 is a graph showing the relationship between the length of the mounting portion 1 in the light-emitting device of the present invention, the distance X between the upper surface of the light-transmitting member and the light-emitting portion, and the light intensity on the axis. FIG. 31 is a cross-sectional view showing a first prior art light-emitting device. Fig. 32 is a cross-sectional view showing a light emitting element housing package of the second prior art. Fig. 33 is a sectional view showing a third prior art light emitting device. [Description of main component symbols] 95381.doc -76- 1245436 41, 50, 60, 60A, 60B, 60C, lighting device 60D, 70, 80, 90, 90A, 90B,

90C 42, 51, 61，71，81，91 基體 42a，5 1 a，61 a，71 a，8 1 a， 安放部 92d 43 框體90C 42, 51, 61, 71, 81, 91 base body 42a, 5 1 a, 61 a, 71 a, 8 1 a, mounting portion 92d 43 frame

43b，52b，62b，72b，82b， 反射面43b, 52b, 62b, 72b, 82b, reflective surface

92c 44, 55, 65, 75, 85, 95 發光元件 45, 53, 63, 73, 83, 93 透光性構件 46, 69, 98 發光部 52, 62, 72, 82, 92 反射構件 57, 77, 87 導體層 58, 78, 88 導電性粘接材料 59, 79, 89 凸部 64, 94 螢光體 961 導線 97 貫通孔 95381.doc 77-92c 44, 55, 65, 75, 85, 95 Light-emitting elements 45, 53, 63, 73, 83, 93 Light-transmitting members 46, 69, 98 Light-emitting sections 52, 62, 72, 82, 92 Reflecting members 57, 77 , 87 conductive layer 58, 78, 88 conductive adhesive 59, 79, 89 convex 64, 94 phosphor 961 lead 97 through hole 95381.doc 77-

Claims (1)

1245436 十、申請專利範圍： 1. -種發光元件收納用封裝，其特徵在於包括： 基體，其係包含陶莞’在上面形成有發光元件的安放 部； 框體，其係以圍繞所述安放部的方式接合在該基體的 上面的外周部，並且内周面作爲反射從所述發光元件發 出的光的反射面；及 配線導體，其係一端形成於所述上面上，並與所述發 光元件的電極電連接，並且另—端以至所述基體的側 面或下面；且 所述基體的所述陶瓷所含的晶粒的平均粒徑爲丨〜5 μηι 〇 2· —種發光裝置，其中備有： 如請求項1所述的發光元件收納用封裝；和 安放在所述安放部上，並且與所述配線導體電連接的 發光元件。 3·根據請求項2所述的發光裝置，其中包含透光性構件，其 係以覆蓋所述發光元件的方式設置在所述框體的内側， 且含有使所述發光元件發光的光進行波長變換的螢光 體。 4 ·根據請求項3所述的發光裝置，其中所述透光性構件的上 面與所述發光元件的發光部之間的距離爲0el〜0.8 mm。 5·根據請求項2所述的發光裝置，其中所述配線導體的所述 一端成爲所述發光元件通過導電性黏接材料電連接的導 95381.doc 1245436 體層，在該導體層的周圍形成有包含絕緣體的凸部。 6·根據請求項5所述的發光裝置，其中所述導體層比所述發 光元件的外周還位於内側。 7·根據请求項5所述的發光裝置，其中所述凸部傾斜爲伴隨 其側面朝向所述基體側而向外侧擴展。 8·根據請求項2所述的發光裝置，其中所述配線導體的所述 一端成爲所述發光元件通過導電性黏接材料而電連接的 導體層；在所述導體層上，在比所述發光元件的外周還 位於内侧的上面上形成有凸部。 9·根據請求項2所述的發光裝置，其中所述安放部從所述基 體的上面突出。 I 〇 ·根據請求項9所述的發光裝置，其中所述突出的安放部傾 斜爲伴隨其側面朝向所述基體側而向外側擴展。 II ·根據請求項3所述的發光裝置，其中所述安放部從所述基 體突出，而發光元件的發光部比所述反射面的下端還位 於上側，所述透光性構件之上面與所述發光部之間的距 離爲0· 1〜0.5 mm。 12·根據請求項11所述的發光裝置，其中所述透光性構件之 表面的算術平均粗糙度爲中央部比外周部大。 13 ·根據請求項2所述的發光裝置，其中所述安放部從所述基 體上面突出’並且在其上面形成由所述配線導體的所述 一端構成且所述發光元件通過導電性黏接材料電連接的 導體層；在該導體層的周圍形成有包含絕緣體的凸部。 14 ·根據請求項13所述的發光裝置，其中所述導體層比所述 95381.doc 1245436 發光元件的外周還位於内側。 15. 根據請求項13所述的發朵梦 幻％尤衷置，其中所述凸部傾斜爲伴 隨其側面朝向所述基體側而向夕卜^㈣。 16. —種發光裝置，其特徵在於具備： 基體，其係包含平板狀的陶瓷； 發光元件；及 反射構件，其係與該基體的上面接合，在上側主面的 中央部上形成將所述發光元件安放在上面的安放部，在 上侧主面的外周部上形成了圍繞所述安放部且將其内周 面作爲將所述發光元件發光的光反射的反射面的側壁 部；且 所述基體中的所述陶瓷所含的晶粒的平均粒徑爲丨〜5 μιη。 1 7·根據請求項16所述的發光裝置，其中包含透光性構件， 其係以覆蓋所述發光元件的方式設置在所述側壁部的内 側’並含有將所述發光元件發光的光進行波長變換的螢 光體。 18·根據請求項17所述的發光裝置，其中所述透光性構件之 上面與所述發光部之間的距離爲0.1〜0.5 mm。 1 9·根據請求項16所述的發光裝置，其中所述安放部爲凸狀。 20·根據請求項16所述的發光裝置，其中所述基體從其上面 到外面爲止形成配線導體；所述反射構件形成有貫通 孔，其係在所述安放部周圍貫通上下主面且位於比所述 光路線還下側；所述發光元件的電極與所述基體上面的 95381.doc 1245436 所述配線導體通過所述貫通孔，由導線電連接著。 21. 22. 根據請求項2〇所述的發光裝置，其中戶斤述貝通孔在其内 部填充有含有了絕緣性的光反射粒子的絕緣性膏。 -種照明裝置’其特徵在於：設置爲使如請求項2〜㈣ 任一項所述發光裝置成爲規定配置。 95381.doc1245436 10. Scope of patent application: 1. A package for accommodating light-emitting elements, comprising: a base body, which includes a mounting portion on which a light-emitting element is formed; and a frame body that surrounds the mounting The inner peripheral surface serves as a reflecting surface that reflects light emitted from the light-emitting element; and a wiring conductor having one end formed on the upper surface and emitting light to the light-emitting element. The electrodes of the element are electrically connected, and the other end is to the side or underside of the substrate; and the average particle diameter of the crystal grains contained in the ceramic of the substrate is 丨 5 μηι 〇 2-a light emitting device, wherein The light emitting element storage package according to claim 1 is provided, and the light emitting element is mounted on the mounting portion and is electrically connected to the wiring conductor. 3. The light-emitting device according to claim 2, further comprising a light-transmitting member which is provided inside the casing so as to cover the light-emitting element, and contains a wavelength of light that causes the light-emitting element to emit light. Transformed phosphor. 4. The light-emitting device according to claim 3, wherein a distance between the upper surface of the light-transmitting member and a light-emitting portion of the light-emitting element is 0el to 0.8 mm. 5. The light-emitting device according to claim 2, wherein the one end of the wiring conductor becomes a conductor layer 95381.doc 1245436 that is electrically connected to the light-emitting element through a conductive adhesive material, and a conductor layer is formed around the conductor layer. Contains protrusions of insulators. 6. The light-emitting device according to claim 5, wherein the conductor layer is located on an inner side than an outer periphery of the light-emitting element. 7. The light-emitting device according to claim 5, wherein the convex portion is inclined so as to expand outward as its side faces toward the base side. 8. The light-emitting device according to claim 2, wherein the one end of the wiring conductor becomes a conductor layer in which the light-emitting element is electrically connected through a conductive adhesive material; A convex portion is formed on the upper surface where the outer periphery of the light emitting element is also located on the inner side. 9. The light-emitting device according to claim 2, wherein the mounting portion protrudes from an upper surface of the substrate. I 0. The light-emitting device according to claim 9, wherein the protruding mounting portion is inclined to expand outward as its side faces toward the base side. II. The light-emitting device according to claim 3, wherein the mounting portion protrudes from the base, and the light-emitting portion of the light-emitting element is located on the upper side than the lower end of the reflective surface, and the upper surface of the light-transmitting member and the The distance between the light emitting sections is from 0.1 to 0.5 mm. 12. The light-emitting device according to claim 11, wherein the arithmetic average roughness of the surface of the light-transmitting member is greater in the central portion than in the outer peripheral portion. 13. The light-emitting device according to claim 2, wherein the mounting portion protrudes from the upper surface of the base body and is formed on the one end of the wiring conductor and the light-emitting element is made of a conductive adhesive material. An electrically connected conductor layer; a convex portion including an insulator is formed around the conductor layer. 14. The light-emitting device according to claim 13, wherein the conductor layer is located on an inner side than an outer periphery of the 95381.doc 1245436 light-emitting element. 15. The fascinating dream% according to claim 13, wherein the convex portion is inclined so as to accompany the side thereof toward the base side. 16. A light-emitting device, comprising: a base including a flat ceramic; a light-emitting element; and a reflecting member joined to an upper surface of the base to form a central portion of an upper main surface to form the above-mentioned A mounting portion on which the light-emitting element is placed, and a side wall portion surrounding the mounting portion and having an inner peripheral surface thereof as a reflecting surface reflecting light emitted from the light-emitting element is formed on an outer peripheral portion of the upper main surface; and The average particle size of the crystal grains contained in the ceramic in the matrix is ˜5 μm. 1 7. The light-emitting device according to claim 16, further comprising a light-transmitting member which is provided inside the side wall portion so as to cover the light-emitting element, and includes light that emits light from the light-emitting element. Wavelength-shifted phosphor. 18. The light-emitting device according to claim 17, wherein a distance between an upper surface of the light-transmitting member and the light-emitting portion is 0.1 to 0.5 mm. 1 9. The light-emitting device according to claim 16, wherein the mounting portion is convex. 20. The light-emitting device according to claim 16, wherein the base body forms a wiring conductor from the upper surface to the outer surface; the reflective member is formed with a through hole that penetrates the upper and lower main surfaces around the mounting portion and is located at a ratio The light path is also on the lower side; the electrode of the light-emitting element and the above-mentioned 95381.doc 1245436 wiring conductor are electrically connected by a wire through the through hole. 21. 22. The light-emitting device according to claim 20, wherein the inside hole is filled with an insulating paste containing insulating light reflecting particles. A lighting device 'is characterized in that the lighting device is provided in a predetermined configuration as described in any one of claims 2 to ㈣. 95381.doc
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US11784459B2 (en) 2016-08-10 2023-10-10 Kyocera Corporation Electrical element mounting package, array package, and electrical device
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US11362242B2 (en) 2019-01-24 2022-06-14 Lextar Electronics Corporation Light-emitting device

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DE102004052902A1 (en) 2005-06-30
DE102004052902B4 (en) 2011-12-08
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CN1612369A (en) 2005-05-04
TW200527716A (en) 2005-08-16
KR20060107428A (en) 2006-10-13

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