TWI419217B - 裝置之製造方法 - Google Patents

裝置之製造方法 Download PDF

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Publication number
TWI419217B
TWI419217B TW097123312A TW97123312A TWI419217B TW I419217 B TWI419217 B TW I419217B TW 097123312 A TW097123312 A TW 097123312A TW 97123312 A TW97123312 A TW 97123312A TW I419217 B TWI419217 B TW I419217B
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wafer
film
cutting
dividing line
tape
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TW097123312A
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TW200913037A (en
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Masaru Nakamura
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Disco Corp
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29099—Material
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)

Claims (2)

  1. 一種裝置之製造方法，係將在表面上由形成格子狀之分割預定線劃分成之複數個區域中形成有裝置之晶圓，沿分割預定線分割成各個裝置，且將晶片接合(die bonding)用的接著薄膜裝設於各裝置之背面，包含有：接著薄膜裝設步驟，係將該接著薄膜裝設於晶圓之背面；晶圓支撐步驟，係將裝設有該接著薄膜之晶圓之接著薄膜側貼合於裝設在環狀框架之切割膠帶之表面；晶圓切割步驟，係將貼合於該切割膠帶表面之晶圓之該切割膠帶側保持於切割裝置之夾盤上，使用環狀刀刃的外周部截面形狀呈V字形之切割刀，將該環狀刀刃外周緣的下端定位於達到貼合在該切割膠帶表面上的晶圓背面的位置，沿該分割預定線切斷晶圓，藉此沿著該分割預定線在該接著薄膜上形成寬度窄的斷裂線或截面為V字形的斷裂溝；及接著薄膜斷裂步驟，係於執行該晶圓切割步驟後，將該切割膠帶擴張，使張力作用於該接著薄膜，再使該接著薄膜沿形成於晶圓之切割溝斷裂。
  2. 如申請專利範圍第1項之裝置之製造方法，更包含有拾取步驟，該拾取步驟係於執行前述接著薄膜斷裂步驟後，將已沿該分割預定線分割之各個裝置，在該接著薄膜裝設於背面之狀態下，從該切割膠帶剝離後加以拾取。
TW097123312A 2007-09-14 2008-06-23 裝置之製造方法 TWI419217B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007238921A JP5122893B2 (ja) 2007-09-14 2007-09-14 デバイスの製造方法

Publications (2)

Publication Number Publication Date
TW200913037A TW200913037A (en) 2009-03-16
TWI419217B true TWI419217B (zh) 2013-12-11

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US (1) US7598156B2 (zh)
JP (1) JP5122893B2 (zh)
KR (1) KR101386339B1 (zh)
CN (1) CN101388326B (zh)
MY (1) MY143700A (zh)
SG (1) SG151173A1 (zh)
TW (1) TWI419217B (zh)

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JP2011060807A (ja) * 2009-09-07 2011-03-24 Renesas Electronics Corp 導電性接合層付き半導体チップ及びその製造方法、並びに半導体装置の製造方法
JP2011091240A (ja) * 2009-10-23 2011-05-06 Disco Abrasive Syst Ltd 半導体デバイスの製造方法
JP2011091239A (ja) * 2009-10-23 2011-05-06 Disco Abrasive Syst Ltd 半導体デバイスの製造方法
JP5950502B2 (ja) * 2011-03-23 2016-07-13 株式会社ディスコ ウエーハの分割方法
TWI455200B (zh) * 2012-01-05 2014-10-01 Wecon Automation Corp 切割裝置及方法
JP6400938B2 (ja) * 2014-04-30 2018-10-03 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
JP6509614B2 (ja) * 2015-04-08 2019-05-08 株式会社ディスコ ウエーハの分割方法
CN105382946A (zh) * 2015-12-17 2016-03-09 哈尔滨新力光电技术有限公司 蓝宝石led条自动高效裂片机及裂片方法
CN106816404B (zh) * 2017-01-19 2020-11-10 吉林麦吉柯半导体有限公司 晶圆的扩膜取粒方法及晶圆的生产方法
JP2018120913A (ja) * 2017-01-24 2018-08-02 株式会社ディスコ レーザー加工装置
JP2018181929A (ja) * 2017-04-05 2018-11-15 株式会社ディスコ 加工方法
JP6991673B2 (ja) * 2018-02-27 2022-01-12 株式会社ディスコ 剥離方法
JP7019254B2 (ja) * 2018-04-10 2022-02-15 株式会社ディスコ 被加工物の切削方法
JP2020009873A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP2020009871A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP7154860B2 (ja) * 2018-07-31 2022-10-18 株式会社ディスコ ウエーハの加工方法

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US20090075458A1 (en) 2009-03-19
TW200913037A (en) 2009-03-16
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US7598156B2 (en) 2009-10-06
KR101386339B1 (ko) 2014-04-16

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