TWI399428B - Ｃｍｐ研磨液以及使用此ｃｍｐ研磨液的基板研磨方法 - Google Patents

Ｃｍｐ研磨液以及使用此ｃｍｐ研磨液的基板研磨方法 Download PDF

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TWI399428B
TWI399428B TW098126212A TW98126212A TWI399428B TW I399428 B TWI399428 B TW I399428B TW 098126212 A TW098126212 A TW 098126212A TW 98126212 A TW98126212 A TW 98126212A TW I399428 B TWI399428 B TW I399428B
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cmp
mass
substrate
acid
polishing
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TW098126212A
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English (en)
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TW201006917A (en
Inventor
Hisataka Minami
Ryouta Saisyo
Hiroshi Ono
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Hitachi Chemical Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
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    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
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Description

CMP研磨液以及使用此CMP研磨液的基板研磨方法
本發明是關於一種CMP研磨液及使用此CMP研磨液的基板研磨方法。
近年來，伴隨半導體積體電路(Large Scale Integration，LSI)的高積體化、高性能化，而開發新型的微細加工技術。化學機械研磨(Chemical Mechanical Polishing，CMP)法亦是其中之一，是在LSI製造步驟，尤其是多層配線形成步驟中的層間絕緣膜的平坦化、形成金屬插塞(plug)及形成埋入配線中被頻繁利用的技術(例如參照美國專利第4944836號公報)。
CMP中使用的金屬用研磨液一般含有氧化劑及固體研磨粒，且可視需要進一步添加氧化金屬溶解劑、保護膜形成劑(金屬防蝕劑)。一般認為研磨的基本機制為：首先利用氧化劑將金屬層表面氧化，利用固體研磨粒來削除該氧化層。
堆積在槽(凹部)上的金屬表面的氧化層與研磨墊接觸較少，未達到利用固體研磨粒的削除效果，但於堆積在與研磨墊接觸的凸部上的金屬層表面的氧化層推進削除。因此，進行CMP的同時，凸部上的金屬層被去除，而使基板表面平坦化(例如參照Journal of Electrochemical Society雜誌，第138卷11號(1991年發行)，第3460~3464頁)。
另一方面，隨著半導體元件的高積體化，要求多接腳化(High Pin Count)、窄間距化、進一步要求薄型安裝化。進一步而言，防止半導體元件與配線基板間的配線延遲或雜訊(noise)亦成為重要課題。因此，對於半導體元件與配線基板的連接方式，廣泛採用倒裝晶片(flip chip)安裝方式來代替先前的以打線接合(wire bonding)為主體的安裝方式。
並且，於該倒裝晶片安裝方式中廣泛使用下述焊錫凸塊連接法：在半導體元件的電極端子上形成突起電極，經由該突起電極而一併與形成於配線基板上的連接端子接合。
關於CMP研磨液，作為將形成於基板上的含有氮化鈦或氮化鉭(tantalum nitride)等的層作為研磨對象的研磨液，已知有添加了保護膜形成劑、有機酸的研磨液(參照日本專利第3780767號公報)。
又，對含有銅的層應用CMP的嘗試，例如已知有使用添加了2-喹啉甲酸(2-quinolinecarboxylic acid)的研磨液的方法(參照日本專利第3192968號公報)。又，對鎳層應用CMP的嘗試，例如已知有使用添加了研磨粒、有機酸、氧化劑的研磨液作為硬磁碟驅動機(hard disk drive，HDD)磁頭用研磨液的方法(參照日本專利特開2006-297501號公報)。
另外，鈀一般與鉑或釕等一併分類為「貴金屬」。對此種貴金屬層應用CMP的嘗試，例如已知有使用下述研 磨液的方法：添加了硫化合物的研磨液，添加了二酮(diketone)、含氮雜環化合物或兩性離子化合物的任一種的研磨液，添加了鉑族系金屬的氧化物的研磨液(參照國際公開第01/44396號小冊子、美國專利第6527622號說明書、日本專利特開平11-121411號公報)。
但是，迄今為止並未實施藉由CMP來研磨鈀的研究。根據本發明者等人的知識見解，上述日本專利第3780767號公報、日本專利第3192968號公報、日本專利特開2006-297501號公報中的研磨液難以被氧化，並且無法對硬度較高的鈀進行研磨。且可判明：上述國際公開第01/44396號小冊子、美國專利第6527622號說明書、日本專利特開平11-121411號公報中的研磨液可研磨鉑或釕，但用相同研磨液對鈀實施研磨時，無法進行研磨。
因此，本發明之目的在於提供一種至少使鈀層的研磨速度快於使用先前研磨液時的研磨速度之CMP研磨液，及使用此CMP研磨液的研磨方法。
本發明提供一種含有1,2,4-***(1,2,4-triazole)、磷酸類、氧化劑及研磨粒而成的CMP研磨液。
藉由本發明的CMP研磨液，至少使鈀層的研磨速度快於使用先前研磨液時的研磨速度，可以所需的研磨速度進行研磨。
作為氧化劑，較好的是氧化劑為選自以過氧化氫、過碘酸、過碘酸鹽、碘酸鹽、溴酸鹽及過硫酸鹽所構成的族 群中的至少一種，作為研磨粒，較好的是選自以氧化鋁(alumina)、二氧化矽(silica)、二氧化鋯(zirconia)、二氧化鈦(titania)及二氧化鈰(ceria)所構成的族群中的至少一種。
較好的是研磨粒的濃度以CMP研磨液的總量基準表示為0.1質量百分比~10質量百分比。藉由使CMP研磨液中的研磨粒濃度在該範圍內，可保持削除作用，並且可抑制粒子凝聚沈澱。
上述CMP研磨液可以特別有效地用作鈀研磨用CMP研磨液。
本發明提供一種基板研磨方法，其是一面對基板與研磨布之間供給CMP研磨液，一面用上述研磨布研磨上述基板，且基板是具有鈀層的基板，CMP研磨液是含有1,2,4-***、磷酸類、氧化劑及研磨粒的CMP研磨液。
藉由本發明的CMP研磨液及使用此CMP研磨液的研磨方法，可至少使鈀層的研磨速度快於使用先前研磨液時的研磨速度，可以所需的研磨速度進行研磨。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並調配所附圖式作詳細說明如下。
以下就用以實施本發明的最佳形態加以詳細說明。
(1,2,4-***)
CMP研磨液含有1,2,4-***。可認為1,2,4-***與後 述的磷酸一併與鈀形成錯合物，可推測此處所形成的錯合物易於被研磨，因而可獲得良好的研磨速度。而且，可認為若為含氮化合物則可與鈀形成錯合物，但根據本發明者等人的研究可知，1,2,4-***以外的化合物無法提高對鈀層的研磨速度。例如以結構類似的1,2,3-***或3-胺基-1,2,4-***，難以獲得對鈀層的良好的研磨速度。
相對於研磨液總質量，1,2,4-***的添加量較好的是0.001質量百分比~20質量百分比。若其含量大於等於0.001質量百分比，則存在利用CMP的鈀層的研磨速度增大的傾向，作為下限值，更好的是大於等於0.01質量百分比，特別好的是大於等於0.05質量百分比。並且，若其含量超過20質量百分比，則存在鈀層的研磨速度飽和的傾向，作為上限值，更好的是小於等於15質量百分比，更好的是小於等於12質量百分比，特別好的是小於等於10質量百分比。
(磷酸類)
CMP研磨液含有磷酸類。可認為磷酸類是藉由使由後述氧化劑所氧化的金屬進行錯合化及/或溶解而促進金屬膜的研磨，可推測其具有作為針對鈀的氧化金屬溶解劑的功能。
作為具有針對鈀的氧化金屬溶解劑的功能的化合物，可考慮各種無機酸、有機酸等，但根據本發明者等人的研究可知，以磷酸類以外的酸，難以獲得對鈀的良好研磨速度。
所謂磷酸類是指磷酸及具有磷酸骨架的其他類似化合物族群(磷酸、磷酸衍生物、焦磷酸、焦磷酸衍生物、多磷酸、多磷酸衍生物等)、亦包含該等化合物的鹽。作為磷酸類的具體例，可列舉：磷酸、次磷酸、亞磷酸、低磷酸、焦磷酸、三偏磷酸、四偏磷酸、焦亞磷酸、多磷酸等。並且，作為磷酸類的鹽的例子是磷酸類的陰離子與陽離子的鹽，作為陽離子的例子有：鋰(lithium)、鈉(sodium)、鉀(potassium)、銣(rubidium)、銫(cesium)、鈹(beryllium)、鎂(magnesium)、鈣(calcium)、鍶(strontium)、鋇(barium)、鈦(titanium)、鋯(zirconium)、釩(vanadium)、鉻(chromium)、錳、鐵、鈷、鎳、銅、銀、鈀、鋅、鋁、鎵(gallium)、錫、銨等的離子。該等化合物的鹽可為具有一個金屬與兩個氫的第一鹽、具有兩個金屬與一個氫的第二鹽、具有三個金屬的第三鹽之任一種，且可為酸性鹽、鹼性鹽、中性鹽之任一種。該等磷酸類可單獨使用一種、亦可混合兩種或兩種以上而使用。
相對於研磨液的總重量，上述磷酸類的添加量較好的是0.001質量百分比~20質量百分比。若其含量大於等於0.001質量百分比，則存在利用CMP的鈀層的研磨速度增大的傾向，作為下限值，更好的是大於等於0.01質量百分比，特別好的是大於等於0.02質量百分比。並且，若其含量超過20質量百分比，則存在鈀層的研磨速度飽和的傾向，作為上限值，更好的是小於等於15質量百分比，特別好的是小於等於10質量百分比。並且，於對後述的除了鈀 層以外，具有鎳層、基底金屬層等的基板進行研磨時，較好的亦為上述添加量。
(氧化劑)
CMP研磨液中所包含的氧化劑是針對於基板中用作層形成用等的金屬的氧化劑。作為氧化劑，可列舉過氧化氫(H2 O2 )、過碘酸、過碘酸鹽、碘酸鹽、溴酸鹽、過硫酸鹽等，其中特別好的是過氧化氫。該等可單獨使用一種、或混合兩種或兩種以上而使用。
相對於研磨液總質量，氧化劑的添加量較好的是0.05質量百分比~20質量百分比，更好的是0.1質量百分比~15質量百分比，特別好的是0.1質量百分比~10質量百分比。若其調配量大於等於0.05質量百分比，則存在金屬的氧化充分，鈀層的研磨速度增大的傾向，若其調配量小於等於20質量百分比，則存在於研磨面難以出現粗糙的傾向。另外，過氧化氫通常可以雙氧水之形式獲得。因此，使用過氧化氫作為氧化劑時，換算為實際濃度，使其成為上述含量。並且，對後述的除了鈀層以外，亦具有鎳層、基底金屬層等的基板進行研磨時，較好的亦為上述添加量。
(研磨粒)
作為研磨粒，具體而言可列舉：煙霧狀氧化鋁(fumed alumina)、過渡氧化鋁、煙霧狀二氧化矽、膠體二氧化矽(colloidal silica)、二氧化鋯、二氧化鈦、二氧化鈰(ceria)等，其中較好的是煙霧狀氧化鋁、過渡氧化鋁、煙霧狀二氧化矽、膠體二氧化矽，就可將研磨速度保持為高速且可 抑制研磨傷之方面而言，更好的是膠體二氧化矽。
相對於研磨液總質量，研磨粒的添加量較好的是0.1質量百分比~10質量百分比，更好的是0.2質量百分比~8.0質量百分比的範圍。若其添加量大於等於0.1質量百分比，則存在可獲得物理的削除作用，利用CMP的鈀層的研磨速度增大的傾向。並且，若其添加量小於等於10質量百分比，則存在可抑制粒子凝聚沈澱的傾向。並且，存在即使添加超過10質量百分比的量，亦不會看到與添加相稱的研磨速度增加的傾向。此種傾向為可由鈀層的研磨速度顯著看到的傾向。
就平坦性及可抑制研磨後殘留於被研磨面的傷之方面而言，研磨粒的一次粒徑較好的是小於等於300 nm，更好的是小於等於200 nm，特別好的是小於等於150 nm，非常好的是小於等於100 nm。並且，一次粒徑的下限並無特別限制，就可獲得充分的物理削除作用之方面而言，更好的是大於等於1 nm，特別好的是大於等於3 nm，非常好的是大於等於5 nm。
此處，上述所謂一次粒徑是指「平均一次粒徑」，是指可由BET比表面積算出的粒子平均直徑。具體而言，首先以800℃(±10℃)將研磨粒乾燥1小時，獲得灼熱殘分。接著，用研缽(磁性、100 ml)將該灼熱殘分充分粉碎，製成測定用試料。並且使用BET比表面積測定裝置(例如YUASA IONICS股份有限公司製造，商品名：AUTOSORB 6)，對測定用試料的BET比表面積V(單位：nm2 /g)進 行測定，將由式：D=6/(ρ‧V)所求得的值D(nm)作為平均一次粒徑。另外，上述式中的ρ表示粒子的密度(單位：g/nm3 )，粒子為膠體二氧化矽時「ρ=0.022」。
研磨粒的平均二次粒徑較好的是5 nm~500 nm。就提高平坦性方面而言，上述平均二次粒徑的上限值較好的是小於等於300 nm，更好的是小於等於200 nm，特別好的是小於等於100 nm。又，就可確保研磨粒子的機械性反應層(氧化層)去除能力、可加快研磨速度方面而言，上述平均二次粒徑的下限值更好的是大於等於5 nm，特別好的是大於等於10 nm。
CMP研磨液中的研磨粒子的一次粒徑，可使用穿透式電子顯微鏡(例如日立製作所股份有限公司製造的S4700)進行測定。
作為具體的測定方法，例如可列舉：將包含上述兩種無機研磨粒的複合粒子、與除此以外的成分加以混合而製作研磨液，適量採集該研磨液。作為採集量可考慮了研磨粒濃度後再決定，例如研磨粒濃度為1質量百分比時，採集0.2 cc左右。將所採集的研磨液加以乾燥，進行觀察。
並且，所謂上述研磨粒子的平均二次粒徑是指CMP研磨液中的研磨粒子的二次粒徑，例如可使用光繞射散射式粒度分佈計(例如COULTER Electronics公司製造的COULTER N4SD)進行測定。
(金屬防蝕劑)
在CMP研磨液中亦可進一步添加金屬防蝕劑。金屬 防蝕劑是抑制金屬層的蝕刻，提高凹陷(dishing)特性的化合物。
金屬防蝕劑具體而言例如可列舉亞胺(imine)、唑(azole)、硫醇(mercaptan)及多糖類等，於上述化合物中，就兼顧抑制金屬層的蝕刻速度以及金屬層的研磨速度的觀點而言，較合適的是含氮環狀化合物。該等化合物可單獨使用或組合兩種或兩種以上而使用。
亞胺具體可列舉：二苯基硫腙(dithizone)、洛因(2,2'-聯喹啉)、新銅洛因(2,9-二甲基-1,10-啡啉)、浴銅靈(2,9-二甲基-4,7-二苯基-1,10-啡啉)及銅立榮(雙環己酮草醯二腙)(cuperazone(biscyclohexanone oxalylhydrazone))等。
唑具體可列舉：苯幷咪唑-2-硫醇(benzimidazole-2-thiol)、三嗪二硫醇、三嗪三硫醇、2-[2-(苯幷噻唑基)]硫代丙酸(2-[2-(benzothiazolyl)]thiopropionic acid)、2-[2-(苯幷噻唑基)]硫代丁酸、2-巰基苯幷噻唑、1,2,3-***、2-胺基-1H-1,2,4-***、3-胺基-1H-1,2,4-***、3,5-二胺基-1H-1,2,4-***、苯幷***、1-羥基苯幷***、1-二羥基丙基苯幷***、2,3-二羧基丙基苯幷***、4-羥基苯幷***、4-羧基-1H-苯幷***、4-羧基-1H-苯幷***甲酯、4-羧基-1H-苯幷***丁酯、4-羧基-1H-苯幷***辛酯、5-己基苯幷***、[1,2,3-苯幷***基-1-甲基][1,2,4-***基-1-甲基][2-乙基己基]胺、甲苯***(tolyltriazole)、萘酚***(naphthotriazole)、雙[(1-苯幷***基)甲基]膦酸、四唑 (tetrazole)、5-胺基-四唑、5-甲基-四唑、1-甲基-5-巰基四唑、1-N，N-二甲基胺基乙基-5-四唑等。
硫醇具體可列舉壬基硫醇及十二烷基硫醇等。
多糖類具體可列舉葡萄糖、纖維素等。
添加上述金屬防蝕劑時，其調配量較好的是不會損及1,2,4-***與磷酸的研磨速度提高效果的範圍，就實現兼顧蝕刻抑制功能與研磨速度之方面而言，相對於研磨液總質量較好的是0.005質量百分比~2.0質量百分比。就可獲得更高的蝕刻性能之方面而言，更好的是大於等於0.01質量百分比，更好的是大於等於0.02質量百分比。並且，就易於獲得適當的研磨速度方面而言，更好的是小於等於1.0質量百分比，特別好的是小於等於0.5質量百分比。
(水溶性聚合物)
就可提高研磨後的平坦性之方面而言，可在CMP研磨液中添加水溶性聚合物。就上述觀點而言，水溶性聚合物的重量平均分子量較好的是大於等於500，更好的是大於等於1500，特別好的是大於等於5000。重量平均分子量的上限並無特別規定，就溶解性的觀點而言，較好的是小於等於500萬。重量平均分子量未滿500時，存在無法表現出較高研磨速度的傾向。
另外，重量平均分子量可藉由凝膠滲透層析法(Gel Permeation Chromatography，GPC)，使用標準聚苯乙烯的校準曲線進行測定，更加具體而言，可在下述條件下進行測定。
使用機器：日立L-6000型(日立製作所股份有限公司製造)
管柱：Gelpack GL-R420+Gelpack GL-R430+Gelpack GL-R440[日立化成工業股份有限公司商品名，合計3根]
溶離液：四氫呋喃
測定溫度：40℃
流量：1.75 ml/min
檢測器：L-3300RI[日立製作所股份有限公司製造]
作為重量平均分子量大於等於500的水溶性聚合物，若不會使研磨液的成分的溶解性降低、不會使研磨粒凝聚則並無特別限制，具體而言可列舉：多糖類、聚羧酸系化合物、乙烯聚合物、二醇化合物等，該等可單獨使用或混合兩種或兩種以上而使用。上述聚羧酸系化合物可列舉聚羧酸或其鹽、聚羧酸酯或其鹽。
作為用作上述水溶性聚合物的多糖類的具體例，例如可列舉：海藻酸(algin acid)、果膠酸(pectinic acid)、羧基甲基纖維素、瓊脂、卡德蘭多糖(curdlan)及聚三葡萄糖(pullulan)等。並且，作為用作上述水溶性聚合物的聚羧酸系化合物的具體例，例如可列舉：聚天冬胺酸(polyasparaginic acid)、聚麩胺酸(polyglutamic acid)、聚離胺酸(polylysine)、聚蘋果酸、聚甲基丙烯酸、聚甲基丙烯酸銨鹽、聚甲基丙烯酸鈉鹽、聚醯胺酸(polyamic acid)、聚順丁烯二酸(polymaleic acid)、聚衣康酸(polyitaconic acid)、聚反丁烯二酸、聚(對苯乙烯羧酸)、 聚丙烯酸、聚丙烯醯胺、胺基聚丙烯醯胺、聚丙烯酸銨鹽、聚丙烯酸鈉鹽、聚醯胺酸、聚醯胺酸銨鹽、聚醯胺酸鈉鹽及聚乙醛酸(polyglyoxylic acid)等聚羧酸、聚羧酸酯及其鹽、以及該等化合物的共聚物。
進一步而言，用作上述水溶性聚合物的乙烯聚合物的具體例可列舉：聚乙烯醇(polyvinyl alcohol)、聚乙烯基吡咯啶酮(polyvinyl pyrrolidone)及聚丙烯醛(polyacrolein)等。並且亦可使用聚乙二醇等。
使用上述水溶性聚合物的化合物時，所應用的基板為半導體積體電路用矽基板等時，由於不希望出現由鹼金屬、鹼土金屬、鹵化物等所引起的污染，因而較理想的是酸或其銨鹽。
上述水溶性聚合物的化合物中，就可高平坦化之方面而言，較好的是聚三葡萄糖、聚蘋果酸、聚甲基丙烯酸、聚丙烯酸、聚丙烯醯胺、聚乙烯醇及聚乙烯基吡咯啶酮、該等化合物的酯及該等化合物的銨鹽。
(pH)
就增大鈀層的CMP研磨速度的觀點而言，CMP研磨液的pH較好的是1~12。若pH大於等於1或pH小於等於6，則存在可確保規定的CMP的研磨速度的傾向，可成為實用的研磨液。pH更好的是1~5，特別好的是1~4。
(研磨方法)
藉由使用以上說明的CMP研磨液，可進行基板的研磨。亦即，提供一種一面對具有鈀層的基板與研磨布之間 供給含有1,2,4-***、磷酸類、氧化劑及研磨粒的CMP研磨液，一面用研磨布研磨基板的基板研磨方法。
應用此種研磨方法時，較好的是一面將基板的被研磨面按壓於研磨平台的研磨布上，對被研磨面與研磨布之間供給本發明的CMP研磨液，一面在對基板的背面(與被研磨面相反的面)施加規定壓力的狀態下，使基板相對於研磨平台而進行相對移動，藉此研磨被研磨面。
作為研磨裝置，例如可使用安裝有可改變轉速的馬達(motor)等，且具有可貼附研磨布(研磨墊(pad))的平台、及保持基板的固持器(holder)的一般研磨裝置。研磨布可使用一般的不織布(nonwoven fabric)、發泡聚胺基甲酸酯(polyurethane)、多孔質氟樹脂(porous fluorine resin)等。研磨條件較好的是使平台的旋轉速度小於等於200 rpm的低速旋轉，以使基板不會飛出。
對按壓於研磨布上的基板所施加的壓力(研磨壓力)較好的是4 kPa~100 kPa，就基板面內的均勻性及圖案的平坦性的觀點而言，更好的是6 kPa~50 kPa。藉由使用本發明的CMP研磨液，可在低研磨壓力下以較高研磨速度對鈀層進行研磨。以較低研磨壓力可進行研磨，就防止研磨層的剝離、碎屑(chipping)、小片化、破裂(cracking)等以及圖案的平坦性的觀點而言較重要。
在研磨期間，用泵等對研磨布連續地供給CMP研磨液。其供給量較好的是研磨布的表面一直由研磨液所覆蓋著。較好的是研磨結束後的基板在流水中充分清洗後，使 用旋轉乾燥器(spin dryer)等將附著於基板上的水滴拂落後使其乾燥。
最佳發揮CMP研磨液效果的基板是具有鈀層(稱為含有鈀的層)的基板。對於在矽等的半導體晶圓上以至少絕緣膜層、鎳層(稱為含有鎳的層)、鈀層的順序形成該等的基板亦較適合。另外，亦可在絕緣膜層與鎳層之間形成基底金屬層。
形成鈀層的材料可列舉選自鈀、鈀合金、其他鈀化合物中的至少一種。
形成鎳層的材料可列舉選自鎳、鎳合金、其他鎳化合物中的至少一種。
基底金屬層是防止導電性物質向層間絕緣膜擴散的層。形成基底金屬層的材料可列舉：鉭(tantalum)、鉭合金、氮化鉭等鉭化合物；鈦、鈦合金、氮化鈦等鈦化合物；鎢(tungsten)、氮化鎢、鎢合金等鎢化合物等。
絕緣膜層可列舉：SiO2 膜、SiN膜等無機絕緣膜，有機矽酸鹽玻璃(organosilicate glass)、全芳香環系Low-k膜等Low-k膜等。
以下一面參照圖式，一面對使用CMP研磨液的研磨方法加以說明。圖1(a)、圖1(b)、圖1(c)、圖1(d)、圖1(e)是表示具有突起電極的基板的製造方法的第1實施形態的剖面圖，該製造方法步驟的一部分中應用上述研磨方法。
圖1(a)所示的基板具備：矽晶圓1，形成於矽晶圓 1上的具有凹凸的絕緣膜2，及被覆絕緣膜2的凹凸面的底層阻障金屬層(under barrier metal layer)3。另外，該底層阻障金屬層3相當於鈀層。使用本發明的CMP研磨液對該基板的底層阻障金屬層3進行研磨。亦即，一面對底層阻障金屬層3與研磨布之間供給含有1,2,4-***、磷酸類、氧化劑及研磨粒的CMP研磨液，一面用研磨布研磨基板，使絕緣膜2的凸部露出。
藉由此研磨，而將形成於絕緣膜2的凸部上的底層阻障金屬層3去除。圖1(b)是表示由此研磨所獲得的基板的剖面圖。
接著，以形成於絕緣膜2的凹部上的底層阻障金屬層3露出之方式，在去除了底層阻障金屬層3的絕緣膜2的凸部上，用公知方法形成光阻圖案(resist pattern)4。圖1(c)是表示形成了光阻圖案4的基板的剖面圖。
接著，藉由電場電鍍法等方法，在形成了光阻圖案4的基板的凹部形成突起電極5，使其自絕緣膜2的表面突出。圖1(d)是表示形成了突起電極5的基板的剖面圖。最後可藉由去除光阻圖案4，而獲得在矽晶圓1上形成了突起電極5的基板。圖1(e)是表示由此所獲得的具有突起電極的基板的剖面圖。另外，突起電極5一般使用金、銀、銅、鎳或焊錫等材料。
圖2(a)、圖2(b)是表示具有突起電極的基板的製造方法的第2實施形態的剖面圖，在該製造方法的步驟的一部分中亦應用上述研磨方法。然而，圖2(a)、圖2(b) 中僅顯示出應用研磨方法前的基板(圖2(a))，及最終所獲得的具有突起電極的基板(圖2(b))，其間的CMP研磨、光阻圖案形成、突起電極形成、光阻圖案去除的各步驟與第1實施形態相同地進行。
圖2(a)所示的基板具備：矽晶圓1，形成於矽晶圓1上的具有凹凸的絕緣膜2，被覆絕緣膜2的凹凸面的基底金屬膜6，及形成於基底金屬膜6上的底層阻障金屬層3。另外，該底層阻障金屬層3相當於鈀層。另外，基底金屬膜6的形成是為了抑制底層阻障金屬層3的成分向矽晶圓1擴散、及提高矽晶圓1與底層阻障金屬層3的密著性而進行的。
使用本發明的CMP研磨液，對此基板的底層阻障金屬層3及基底金屬膜6進行研磨。亦即，一面向底層阻障金屬層3與研磨布之間供給含有1,2,4-***、磷酸類、氧化劑及研磨粒的CMP研磨液，一面用研磨布研磨基板，使絕緣膜2的凸部露出。藉由此研磨，將形成於絕緣膜2的凸部上的底層阻障金屬層3及基底金屬膜6去除。並且，對於由此所獲得的基板，與第1實施形態相同地進行光阻圖案形成、突起電極形成、光阻圖案去除，藉此可獲得圖2(b)所示的在矽晶圓1上形成了突起電極5的基板。
圖3(a)、圖3(b)是表示具有突起電極的基板的製造方法的第3實施形態的剖面圖，在該製造方法的步驟的一部分中亦應用上述研磨方法。然而，圖3(a)、圖3(b)中僅表示應用研磨方法前的基板(圖3(a))，及最終所獲 得的具有突起電極的基板(圖3(b))，其間的CPM研磨、光阻圖案形成、突起電極形成、光阻圖案去除的各步驟與第1實施形態相同地進行。
圖3(a)所示的基板具備：矽晶圓1，形成於矽晶圓1上的具有凹凸的絕緣膜2，被覆絕緣膜2的凹凸面的基底金屬膜6，形成於基底金屬膜6上的第1底層阻障金屬層3b，及形成於第1底層阻障金屬層3b上的第2底層阻障金屬層3a。另外，該第1底層阻障金屬層3b或第2底層阻障金屬層3a相當於鈀層。
使用本發明的CMP研磨液，對此基板的第1底層阻障金屬層3b、第2底層阻障金屬層3a及基底金屬膜6加以研磨。亦即，一面向第2底層阻障金屬層3a與研磨布之間供給含有1,2,4-***、磷酸類、氧化劑及研磨粒的CMP研磨液，一面用研磨布研磨基板，使絕緣膜2的凸部露出。藉由此研磨，將形成於絕緣膜2的凸部上的第1底層阻障金屬層3b、第2底層阻障金屬層3a及基底金屬膜6去除。並且，對於由此所獲得的基板，與第1實施形態相同地進行光阻圖案形成、突起電極形成、光阻圖案去除，藉此可獲得圖3(b)所示的在矽晶圓1上形成了突起電極5的基板。
將圖3(a)、圖3(b)中的第1底層阻障金屬層設為鎳層，將第2底層阻障金屬層設為鈀層的例子(底層阻障金屬包含兩層的結構)如圖4(a)、圖4(b)所示。
圖4(a)所示的基板是在設置於矽基板11上的絕緣 膜12的凹凸部上，順次形成基底金屬層15、鎳層14及鈀層13而成的基板。使用本發明的CMP研磨液對鈀層13、鎳層14及基底金屬層15進行研磨，如圖4(b)所示，可使絕緣膜12的凸部露出。
作為使用CMP研磨液的研磨方法的其他例，可列舉下述方法：具備對存在於絕緣膜12的凸部上的鈀層13進行研磨而使鎳層14露出的第1研磨步驟；及對存在於絕緣膜層1的凸部上的鎳層14、基底金屬層15、及埋入絕緣膜12的凹部的鈀層13的一部分進行研磨，使絕緣膜的凸部露出的第2研磨步驟；且該兩研磨步驟中，至少在第1研磨步驟中使用CMP研磨液。
實施例
以下利用實施例對本發明加以說明。另外，本發明並非限於該等實施例。
(研磨液製作方法)
實施例1~實施例5及比較例1~比較例16中所使用的CMP研磨液，相對於研磨液質量而含有10質量百分比的表1所示的研磨粒、10質量百分比的30%雙氧水、0.5質量百分比~5質量百分比的表1所示的氧化金屬溶解劑、0質量百分比~0.5質量百分比的表1所示的金屬防蝕劑、剩餘部分的純水，由此進行製備。使用該等金屬用研磨液，以下述研磨條件進行基板研磨。
(液狀特性評價)
測定溫度：25±5℃
pH：用電氣化學計器股份有限公司製造、型號PHL-40進行測定。
(CMP研磨條件)
研磨裝置：桌上型研磨(lapping)裝置(Nano Factor股份有限公司製造)
研磨液流量：11 mL/min
基板：用濺鍍法形成了厚0.3 μm的鈀膜的矽基板。
研磨墊：具有獨立氣泡的發泡聚胺基甲酸酯樹脂(Rohm and Haas Japan股份有限公司製造、型號IC1000)
研磨壓力：29.4 kPa
基板與研磨平台的相對速度：25 m/min
研磨液的供給量：11 mL/min
研磨時間：1分鐘
清洗：研磨後用流水充分清洗晶圓後，去除水滴，使其乾燥。
(研磨品評價項目)
研磨速度：由電阻值換算研磨前後的膜厚差，求得在上述條件下經研磨及清洗的鈀膜的研磨速度。
實施例1~實施例5及比較例1~比較例16中的鈀研磨速度(PdRR)示於表1。
以下就表1中所示的結果加以詳細說明。於實施例1中，添加了與比較例4、比較例7~比較例16相同的氧化劑、氧化金屬溶解劑，進一步添加了0.5質量百分比的作為錯合化劑的1,2,4-***、10質量百分比的作為研磨粒的二次粒徑為0.3 μm的α氧化鋁。氧化劑為雙氧水，氧化金屬溶解劑為磷酸。實施例1中，鈀研磨速度顯示出快於比較例4、比較例7~比較例16的值，為67 nm/min。
於實施例2中，添加了與比較例4、比較例7~比較例16相同的氧化劑、氧化金屬溶解劑，進一步添加了0.5質量百分比的作為錯合化劑的1,2,4-***、10質量百分比的作為研磨粒的二次粒徑為42 nm的膠體二氧化矽。氧化劑為雙氧水，氧化金屬溶解劑為磷酸。實施例2中，鈀研磨速度顯示出快於比較例4、比較例7~比較例16的值，為40 nm/min。
於實施例3中，添加了與比較例4、比較例7~比較例16相同的氧化劑、氧化金屬溶解劑，進一步添加了0.5質量百分比的作為錯合化劑的1,2,4-***、2質量百分比的作為研磨粒的二次粒徑為42 nm的膠體二氧化矽。氧化劑為雙氧水，氧化金屬溶解劑為磷酸，磷酸的添加量為1質量百分比。實施例3中，鈀研磨速度顯示出快於比較例4、比較例7~比較例16的值，為36 nm/min。
於實施例4中，添加了與比較例1~比較例16相同的氧化劑，進一步添加了0.5質量百分比的作為錯合化劑的1,2,4-***、1質量百分比的作為氧化金屬溶解劑的多磷 酸、2質量百分比的作為研磨粒的二次粒徑為42 nm的膠體二氧化矽。氧化劑為雙氧水。實施例4中，鈀研磨速度顯示出快於比較例1~比較例16的值，為34 nm/min。
於實施例5中，添加了與比較例1~比較例16相同的氧化劑，進一步添加0.5質量百分比的作為錯合化劑的1,2,4-***、1質量百分比的作為氧化金屬溶解劑的焦磷酸、2質量百分比的作為研磨粒的二次粒徑為42 nm的膠體二氧化矽。氧化劑為雙氧水。實施例5中，鈀研磨速度顯示出快於比較例1~比較例16的值，為31 nm/min。
[產業上之可利用性]
藉由本發明的CMP研磨液及使用此CMP研磨液的研磨方法，可至少使鈀層的研磨速度快於使用先前研磨液時的研磨速度，可以所需的研磨速度進行研磨。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1‧‧‧矽晶圓
2、12‧‧‧絕緣膜
3‧‧‧底層阻障金屬層
3a‧‧‧第2底層阻障金屬層
3b‧‧‧第1底層阻障金屬層
4‧‧‧光阻圖案
5‧‧‧突起電極
6、15‧‧‧基底金屬膜
11‧‧‧矽基板
13‧‧‧鈀層
14‧‧‧鎳層
圖1(a)、圖1(b)、圖1(c)、圖1(d)、圖1(e)是表示具有突起電極的基板的製造方法的第1實施形態的剖面圖。
圖2(a)、圖2(b)是表示具有突起電極的基板的製造方法的第2實施形態的剖面圖。
圖3(a)、圖3(b)是表示具有突起電極的基板的製 造方法的第3實施形態的剖面圖。
圖4(a)、圖4(b)是表示第3實施形態的具體例的剖面圖。
1‧‧‧矽晶圓
2‧‧‧絕緣膜
3‧‧‧底層阻障金屬層
4‧‧‧光阻圖案
5‧‧‧突起電極

Claims (36)

  1. 一種CMP研磨液，其用於鈀研磨，其含有1,2,4-***、磷酸類、氧化劑及研磨粒，相對於CMP研磨液的總重量，上述磷酸類的添加量為0.001質量百分比~20質量百分比。
  2. 如申請專利範圍第1項所述之CMP研磨液，其中上述氧化劑是選自以過氧化氫、過碘酸、過碘酸鹽、碘酸鹽、溴酸鹽及過硫酸鹽所構成的族群中的至少一種。
  3. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中上述研磨粒是選自以氧化鋁、二氧化矽、二氧化鋯、二氧化鈦及二氧化鈰所構成的族群中的至少一種。
  4. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中上述研磨粒的濃度以CMP研磨液的總量基準表示為0.1質量百分比~10質量百分比。
  5. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中相對於CMP研磨液的總質量，上述1,2,4-***的添加量為0.001質量百分比~20質量百分比。
  6. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中上述磷酸類是選自以磷酸、次磷酸、亞磷酸、低磷酸、焦磷酸、三偏磷酸、四偏磷酸、焦亞磷酸、多磷酸及此些的鹽所構成的族群中的至少一種。
  7. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中相對於CMP研磨液的總質量，上述氧化劑的添加量為0.05質量百分比~20質量百分比。
  8. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中上述研磨粒的一次粒徑為1~300 nm。
  9. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中上述研磨粒的平均二次粒徑為5~500 nm。
  10. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中更含有金屬防蝕劑。
  11. 如申請專利範圍第10項所述之CMP研磨液，其中相對於CMP研磨液的總質量，上述金屬防蝕劑的添加量為0.005質量百分比~2.0質量百分比。
  12. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中更含有水溶性聚合物。
  13. 如申請專利範圍第12項所述之CMP研磨液，其中上述水溶性聚合物的重量平均分子量為500~500萬。
  14. 如申請專利範圍第10項所述之CMP研磨液，其中更含有水溶性聚合物。
  15. 如申請專利範圍第1項或第2項所述之CMP研磨液，其中pH為1~12。
  16. 如申請專利範圍第10項所述之CMP研磨液，其中pH為1~12。
  17. 如申請專利範圍第14項所述之CMP研磨液，其中pH為1~12。
  18. 如申請專利範圍第10項所述之CMP研磨液，其中更含有水溶性聚合物，且pH為1~12。
  19. 一種基板研磨方法，其是一面對基板與研磨布之間 供給CMP研磨液，一面用上述研磨布研磨上述基板，其中，上述基板是具有鈀層的基板，上述CMP研磨液是含有1,2,4-***、磷酸類、氧化劑及研磨粒的CMP研磨液，相對於研磨液的總重量，上述磷酸類的添加量為0.001質量百分比~20質量百分比。
  20. 如申請專利範圍第19項所述之基板研磨方法，其中上述氧化劑是選自以過氧化氫、過碘酸、過碘酸鹽、碘酸鹽、溴酸鹽及過硫酸鹽所構成的族群中的至少一種。
  21. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中上述研磨粒是選自以氧化鋁、二氧化矽、二氧化鋯、二氧化鈦及二氧化鈰所構成的族群中的至少一種。
  22. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中上述研磨粒的濃度以CMP研磨液的總量基準表示為0.1質量百分比~10質量百分比。
  23. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中相對於CMP研磨液的總質量，上述1,2,4-***的添加量為0.001質量百分比~20質量百分比。
  24. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中上述磷酸類是選自以磷酸、次磷酸、亞磷酸、低磷酸、焦磷酸、三偏磷酸、四偏磷酸、焦亞磷酸、多磷酸及此些的鹽所構成的族群中的至少一種。
  25. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中相對於CMP研磨液的總質量，上述氧化劑的 添加量為0.05質量百分比~20質量百分比。
  26. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中上述研磨粒的一次粒徑為1~300 nm。
  27. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中上述研磨粒的平均二次粒徑為5~500 nm。
  28. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中上述CMP研磨液更含有金屬防蝕劑。
  29. 如申請專利範圍第28項所述之基板研磨方法，其中相對於CMP研磨液的總質量，上述金屬防蝕劑的添加量為0.005質量百分比~2.0質量百分比。
  30. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中上述CMP研磨液更含有水溶性聚合物。
  31. 如申請專利範圍第30項所述之基板研磨方法，其中上述水溶性聚合物的重量平均分子量為500~500萬。
  32. 如申請專利範圍第28項所述之基板研磨方法，其中上述CMP研磨液更含有水溶性聚合物。
  33. 如申請專利範圍第19項或第20項所述之基板研磨方法，其中上述CMP研磨液的pH為1~12。
  34. 如申請專利範圍第28項所述之基板研磨方法，其中上述CMP研磨液的pH為1~12。
  35. 如申請專利範圍第32項所述之基板研磨方法，其中上述CMP研磨液的pH為1~12。
  36. 如申請專利範圍第28項所述之基板研磨方法，其中上述CMP研磨液更含有水溶性聚合物，且上述CMP研磨液的pH為1~12。
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