SG11201700887WA - Chemical-mechanical polishing composition comprising organic/inorganic composite particles - Google Patents

Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Info

Publication number
SG11201700887WA
SG11201700887WA SG11201700887WA SG11201700887WA SG11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA
Authority
SG
Singapore
Prior art keywords
organic
chemical
mechanical polishing
composite particles
polishing composition
Prior art date
Application number
SG11201700887WA
Inventor
Yongqing Lan
Bastian Marten Noller
Liang Jiang
Daniel Kwo-Hung Shen
Reza Golzarian
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201700887WA publication Critical patent/SG11201700887WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
SG11201700887WA 2014-08-11 2015-07-24 Chemical-mechanical polishing composition comprising organic/inorganic composite particles SG11201700887WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462035533P 2014-08-11 2014-08-11
PCT/IB2015/055608 WO2016024177A1 (en) 2014-08-11 2015-07-24 Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Publications (1)

Publication Number Publication Date
SG11201700887WA true SG11201700887WA (en) 2017-03-30

Family

ID=55303915

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201700887WA SG11201700887WA (en) 2014-08-11 2015-07-24 Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Country Status (8)

Country Link
US (1) US10214663B2 (en)
EP (1) EP3180406A4 (en)
JP (1) JP6804435B2 (en)
KR (1) KR102485534B1 (en)
CN (1) CN106795420A (en)
SG (1) SG11201700887WA (en)
TW (1) TWI675098B (en)
WO (1) WO2016024177A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10128146B2 (en) * 2015-08-20 2018-11-13 Globalwafers Co., Ltd. Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures
JP6280678B1 (en) * 2016-12-22 2018-02-14 三井金属鉱業株式会社 Polishing liquid and polishing method
FR3062075B1 (en) * 2017-01-25 2021-09-10 Commissariat Energie Atomique INORGANIC PROTON CONDUCTING PARTICLES, PROCESS FOR PREPARING THEIR PREPARATION AND USE OF THEIR TO CONSTITUTE A FUEL CELL MEMBRANE
FR3062122B1 (en) * 2017-01-25 2019-04-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives INORGANIC CONDUCTIVE PARTICLES OF FLUORINATED PROTONS AND USE OF SUCH PARTICLES IN PROTON-CONDUCTIVE MEMBRANES
KR102343435B1 (en) * 2018-08-08 2021-12-24 삼성에스디아이 주식회사 Cmp slurry composition for polishing copper layer and method for polishing copper layer using the same
CN110577823B (en) * 2018-08-20 2021-10-12 蓝思科技(长沙)有限公司 Nano abrasive, polishing solution, preparation method and application
TWI745704B (en) * 2019-06-21 2021-11-11 國立陽明交通大學 Nio chip and the preparing method and use thereof
CN113549424B (en) * 2021-08-04 2022-05-13 白鸽磨料磨具有限公司 Cerium oxide cluster powder for polishing and preparation method thereof
CN114456716B (en) * 2022-01-14 2022-10-25 华东理工大学 Aluminum oxide polishing solution for polishing sapphire and preparation method thereof

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JP4075247B2 (en) 1999-09-30 2008-04-16 Jsr株式会社 Aqueous dispersion for chemical mechanical polishing
DE60131080T2 (en) * 2000-05-31 2008-07-31 Jsr Corp. GRINDING MATERIAL
EP1211024A3 (en) * 2000-11-30 2004-01-02 JSR Corporation Polishing method
JP4187497B2 (en) 2002-01-25 2008-11-26 Jsr株式会社 Chemical mechanical polishing method for semiconductor substrate
US20040162011A1 (en) 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US6939211B2 (en) * 2003-10-09 2005-09-06 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US20060205219A1 (en) * 2005-03-08 2006-09-14 Baker Arthur R Iii Compositions and methods for chemical mechanical polishing interlevel dielectric layers
TW200714697A (en) 2005-08-24 2007-04-16 Jsr Corp Aqueous dispersion for chemical mechanical polish, kit for formulating the aqueous dispersion, chemical mechanical polishing method and method for producing semiconductor device
TWI387643B (en) * 2006-12-29 2013-03-01 Lg Chemical Ltd Cmp slurry composition for forming metal wiring line
JP2008288509A (en) * 2007-05-21 2008-11-27 Fujifilm Corp Polishing solution for metal
JP5327427B2 (en) 2007-06-19 2013-10-30 Jsr株式会社 Chemical mechanical polishing aqueous dispersion preparation set, chemical mechanical polishing aqueous dispersion preparation method, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
US8900473B2 (en) * 2008-08-06 2014-12-02 Hitachi Chemical Company, Ltd. Polishing solution for CMP, and method for polishing substrate using the polishing solution for CMP
US8366959B2 (en) 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
KR20140014366A (en) * 2009-04-15 2014-02-06 바스프 에스이 Method for producing an aqueous composite particle dispersion
EP2427523B1 (en) * 2009-05-06 2015-10-28 Basf Se An aqueous metal polishing agent comprising a polymeric abrasive containing pendant functional groups and its use in a cmp process
US9309448B2 (en) * 2010-02-24 2016-04-12 Basf Se Abrasive articles, method for their preparation and method of their use
CN101870851B (en) 2010-06-02 2013-01-30 浙江工业大学 Chemico-mechanical polishing liquid and polishing method
JP6096670B2 (en) * 2010-12-10 2017-03-15 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se Aqueous polishing composition and method for chemically and mechanically polishing a substrate containing a silicon oxide dielectric film and a polysilicon film
US20130186850A1 (en) * 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
US9982166B2 (en) * 2013-12-20 2018-05-29 Cabot Corporation Metal oxide-polymer composite particles for chemical mechanical planarization

Also Published As

Publication number Publication date
US20170226381A1 (en) 2017-08-10
CN106795420A (en) 2017-05-31
WO2016024177A1 (en) 2016-02-18
TWI675098B (en) 2019-10-21
JP6804435B2 (en) 2020-12-23
US10214663B2 (en) 2019-02-26
EP3180406A4 (en) 2018-04-11
KR102485534B1 (en) 2023-01-06
JP2017530215A (en) 2017-10-12
KR20170041888A (en) 2017-04-17
EP3180406A1 (en) 2017-06-21
TW201610128A (en) 2016-03-16

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