TWI385729B - 用以製造高效能金屬氧化物和金屬氮氧化物薄膜電晶體之閘極介電層處理 - Google Patents
用以製造高效能金屬氧化物和金屬氮氧化物薄膜電晶體之閘極介電層處理 Download PDFInfo
- Publication number
- TWI385729B TWI385729B TW098122449A TW98122449A TWI385729B TW I385729 B TWI385729 B TW I385729B TW 098122449 A TW098122449 A TW 098122449A TW 98122449 A TW98122449 A TW 98122449A TW I385729 B TWI385729 B TW I385729B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gate dielectric
- plasma
- exposing
- semiconductor layer
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 title description 7
- 239000002184 metal Substances 0.000 title description 7
- 229910044991 metal oxide Inorganic materials 0.000 title description 6
- 150000004706 metal oxides Chemical class 0.000 title description 6
- 239000004065 semiconductor Substances 0.000 claims description 74
- 238000000151 deposition Methods 0.000 claims description 49
- 229910052760 oxygen Inorganic materials 0.000 claims description 42
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 38
- 239000001301 oxygen Substances 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 29
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052718 tin Inorganic materials 0.000 claims description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 229910052738 indium Inorganic materials 0.000 claims description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 16
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 15
- 229910052793 cadmium Inorganic materials 0.000 claims description 15
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 15
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 14
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 3
- 239000002002 slurry Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 229910052732 germanium Inorganic materials 0.000 description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000001272 nitrous oxide Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910007717 ZnSnO Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本發明之實施例大體上是關於製造薄膜電晶體(TFT)的方法。
因TFT陣列可用在常用於電腦和電視平面面板的液晶主動矩陣顯示器(LCD),故現時對這些裝置特別感興趣。LCD還設有發光二極體(LED)做為背光。另外,有機發光二極體(OLED)已用於主動矩陣顯示器,且這些OLED需要TFT來處理顯示器的動作。
以非晶矽製作之TFT已成為平面面板顯示器產業的關鍵組件。可惜非晶矽有其限制,例如低遷移率。OLED所需的遷移率至少是非晶矽所能達到的十倍以上。此外,OLED顯示器為電流驅動元件,故易受Vth
漂移影響。高電流或高偏壓電壓下引起非晶矽TFT的Vth
漂移乃急待解決的問題。另一方面,多晶矽的遷移率比非晶矽高。多晶矽為結晶體,其會造成局部沉積不均勻。製造多晶矽膜需進行複雜的退火製程,因此使用多晶矽來製造大面積顯示器比起非晶矽更困難、也更昂貴。由於非晶矽的限制,導致OLED發展漸緩。
近年來已開發透明TFT,其中氧化鋅當作主動通道層。氧化鋅為化合物半導體,其可在相當低的沉積溫度下長成結晶材料至如玻璃和塑膠等各種基板上。
故此技藝需要具非晶主動通道且遷移率高之TFT。
本發明大體上包括薄膜電晶體(TFT)和其製造方法。TFT的閘極介電層會影響TFT的臨界電壓。藉由在沉積主動通道材料前處理閘極介電層,可改進臨界電壓。處理閘極介電層的一方法涉及暴露閘極介電層至一氧化二氮(N2
O)氣體。處理閘極介電層的另一方法涉及暴露閘極介電層至N2
O電漿。氧化矽雖未實際應用到矽基TFT的閘極介電層,但其用於金屬氧化物TFT時,也可改進臨界電壓。藉由處理閘極介電層及/或使用氧化矽,可改進TFT的次臨界斜率和臨界電壓。
在一實施例中,揭露一種TFT製造方法。方法包括沉積閘極介電層至閘極電極和基板上、暴露閘極介電層至N2
O電漿或其他電漿而進行處理、沉積半導體層至閘極介電層上、沉積導電層至半導體層上、以及蝕刻導電層和半導體層而界定源極與汲極和主動通道。半導體層包括氧、及一或多個選自由鋅、鎵、銦、鎘、錫和其組合物構成群組之元素,或者半導體層包括氮、氧、及一或多個選自由鋅、銦、錫、鎵、鎘和其組合物構成群組之元素。主動通道為半導體層的一部分。
在另一實施例中,揭露一種TFT製造方法。方法包括沉積氮化矽層至閘極電極和基板上、沉積氧化矽層至氮化矽層上、沉積半導體層至氧化矽層上、沉積導電層至半導體層上、以及蝕刻導電層而界定源極與汲極和主動通道。半導體層包括氧、及一或多個選自由鋅、鎵、銦、鎘、錫和其組合物構成群組之元素,或者半導體層包括氮、氧、及一或多個選自由鋅、銦、錫、鎵、鎘和其組合物構成群組之元素。主動通道為半導體層的一部分。
在又一實施例中,揭露一種TFT製造方法。方法包括沉積氧化矽層至閘極電極和基板上、沉積半導體層至氧化矽層上、沉積導電層至半導體層上、以及蝕刻導電層而界定源極與汲極和主動通道。半導體層包括氧、及一或多個選自由鋅、鎵、銦、鎘、錫和其組合物構成群組之元素,或者半導體層包括氮、氧、及一或多個選自由鋅、銦、錫、鎵、鎘和其組合物構成群組之元素。主動通道暴露出部分半導體層。
在再一實施例中,揭露一種TFT。TFT包括氧化矽層,位於閘極電極和基板上、半導體層,位於氧化矽層上、以及源極與汲極,位於半導體層上。半導體層包括氧、及一或多個選自由鋅、鎵、銦、鎘、錫和其組合物構成群組之元素,或者半導體層包括氮、氧、及一或多個選自由鋅、銦、錫、鎵、鎘和其組合物構成群組之元素。源極和汲極彼此相隔而暴露出部分半導體層。
本發明大體上包括薄膜電晶體(TFT)和其製造方法。TFT的閘極介電層會影響TFT的臨界電壓。藉由在沉積主動通道材料前處理閘極介電層,可改進臨界電壓。處理閘極介電層的一方法涉及在高於200℃之溫度下,暴露閘極介電層至一氧化二氮(N2
O)氣體。處理閘極介電層的另一方法涉及暴露閘極介電層至N2
O電漿。氧化矽雖未實際應用到矽基TFT的閘極介電層,但其用於金屬氧化物TFT時,也可改進臨界電壓。藉由處理閘極介電層及/或使用氧化矽,可改進TFT的臨界電壓。氧化鋅基半導體可透過摻雜製作成非晶材料。如此可避免晶粒結構引起的不均勻問題。如氧化鋅基半導體之非晶半導體更易施行於目前採用底閘極TFT結構的顯示器製造製程。
第1A-1F圖為根據本發明一實施例之TFT 100於不同製造階段的截面圖。TFT包含基板102。在一實施例中,基板102包含玻璃。在另一實施例中,基板102包含聚合物。在又一實施例中,基板102包含塑膠。在再一實施例中,基板102包含金屬。
閘極電極104形成在基板上。閘極電極104包含導電層,用以控制TFT內的電荷載子移動。閘極電極104可包含金屬,例如鋁、鎢、鉻、鉭或其組合物。閘極電極104可以傳統沉積技術形成,包括濺射、微影和蝕刻。藉由毯覆沉積導電層至基板102上可形成閘極電極104。導電層可以濺射沉積而得。隨後,光阻層沉積在導電層上。光阻層經圖案化形成罩幕。藉由蝕去導電層未
遮蔽的區域並留下基板102上的閘極電極104可形成閘極電極104。
閘極介電層106沉積於閘極電極104上。閘極介電層106會影響TFT的次臨界區擺幅或斜率和臨界電壓。就矽基TFT(即具如非晶矽之矽基半導體層的TFT)而言,閘極介電層106不含氧化矽,因其將使得TFT具有相當正的Vth
和低遷移率。但就金屬氧化物TFT而言,已發現氧化矽可當作有效閘極介電層106。氧化矽中的氧不會大幅改變金屬氧化物層或界面,故TFT不會失效。在一實施例中,閘極介電層106包含氮化矽。在另一實施例中,閘極介電層106包含氧化矽。在又一實施例中,閘極介電層106包含二氧化矽。在再一實施例中,閘極介電層106包含氮氧化矽。在另一實施例中,閘極介電層106包含氧化鋁(Al2
O3
)。閘極介電層106可以熟知的沉積技術沉積,包括電漿增強化學氣相沉積(PECVD)。在一實施例中,閘極介電層106是以物理氣相沉積(PVD)沉積而得。
沉積閘極介電層106後,處理閘極介電層106。各種處理閘極介電層106的技術將詳述於下。技術之一涉及暴露閘極介電層106至電漿108,以鈍化閘極介電層106的表面。
處理閘極介電層106後,沉積半導體層110於其上。半導體層110將變成包含最終TFT結構之主動通道的材料。半導體層110包含氧、及一或多個選自由鋅、鎵、銦、鎘、錫和其組合物構成群組之元素,或包含氮、氧、及一或多個選自由鋅、銦、錫、鎵、鎘和其組合物構成群組之元素。在一實施例中,半導體層110包含氧、氮、及一或多個具佔滿s軌域與佔滿d軌域之元素。在另一實施例中,半導體層110包含氧、氮、及一或多個具佔滿f軌域之元素。在又一實施例中,半導體層110包含氧、氮、及一或多個二價元素。在再一實施例中,半導體層110包含氧、氮、及一或多個三價元素。在另一實施例中,半導體層110包含氧、氮、及一或多個四價元素。
半導體層110還可包含摻質。適用的摻質包括鋁(Al)、錫(Sn)、鎵(Ga)、鈣(Ca)、矽(Si)、鈦(Ti)、銅(Cu)、鍺(Ge)、銦(In)、鎳(Ni)、錳(Mn)、鉻(Cr)、釩(V)、鎂(Mg)、氮化矽(Six
Ny
)、氧化鋁(Alx
Oy
)和碳化矽(SiC)。在一實施例中,摻質包含鋁。在另一實施例中,摻質包含錫。
半導體層110的例子包括ZnOx
Ny
、SnOx
Ny
、InOx
Ny
、CdOx
Ny
、GaOx
Ny
、ZnSnOx
Ny
、ZnInOx
Ny
、ZnCdOx
Ny
、ZnGaOx
Ny
、SnInOx
Ny
、SnCdOx
Ny
、SnGaOx
Ny
、InCdOx
Ny
、InGaOx
Ny
、CdGaOx
Ny
、ZnSnInOx
Ny
、ZnSnCdOx
Ny
、ZnSnGaOx
Ny
、ZnInCdOx
Ny
、ZnInGaOx
Ny
、ZnCdGaOx
Ny
、SnInCdOx
Ny
、SnInGaOx
Ny
、SnCdGaOx
Ny
、InCdGaOx
Ny
、ZnSnInCdOx
Ny
、ZnSnInGaOx
Ny
、ZnInCdGaOx
Ny
和SnInCdGaOx
Ny
。半導體層110的例子包括以下摻雜材料:ZnOx
Ny
:Al、ZnOx
Ny
:Sn、SnOx
Ny
:Al、InOx
Ny
:Al、InOx
Ny
:Sn、CdOx
Ny
:Al、CdOx
Ny
:Sn、GaOx
Ny
:Al、GaOx
Ny
:Sn、ZnSnOx
Ny
:Al、ZnInOx
Ny
:Al、ZnInOx
Ny
:Sn、ZnCdOx
Ny
:Al、ZnCdOx
Ny
:Sn、ZnGaOx
Ny
:Al、ZnGaOx
Ny
:Sn、SnInOx
Ny
:Al、SnCdOx
Ny
:Al、SnGaOx
Ny
:Al、InCdOx
Ny
:Al、InCdOx
Ny
:Sn、InGaOx
Ny
:Al、InGaOx
Ny
:Sn、CdGaOx
Ny
:Al、CdGaOx
Ny
:Sn、ZnSnInOx
Ny
:Al、ZnSnCdOx
Ny
:Al、ZnSnGaOx
Ny
:Al、ZnInCdOx
Ny
:Al、ZnInCdOx
Ny
:Sn、ZnInGaOx
Ny
:Al、ZnInGaOx
Ny
:Sn、ZnCdGaOx
Ny
:Al、ZnCdGaOx
Ny
:Sn、SnInCdOx
Ny
:Al、SnInGaOx
Ny
:Al、SnCdGaOx
Ny
:Al、InCdGaOx
Ny
:Al、InCdGaOx
Ny
:Sn、ZnSnInCdOx
Ny
:Al、ZnSnInGaOx
Ny
:Al、ZnInCdGaOx
Ny
:Al、ZnInCdGaOx
Ny
:Sn和SnInCdGaOx
Ny
:Al。
半導體層110可以濺射沉積而得。在一實施例中,濺射靶材包含金屬,例如鋅、鎵、錫、鎘、銦或其組合物。濺射靶材另可包含摻質。含氧氣體和含氮氣體引進腔室,藉以反應濺射沉積半導體層110。在一實施例中,含氮氣體包含氮氣(N2
)。在另一實施例中,含氮氣體包含一氧化二氮(N2
O)、氨氣(NH3
)或其組合物。在一實施例中,含氧氣體包含氧氣(O2
)。在另一實施例中,含氧氣體包含N2
O。含氮氣體的氮和含氧氣體的氧與濺射靶材的金屬反應形成包含金屬、氧、氮、和選擇性包含摻質的半導體材料於基板上。在一實施例中,含氮氣體和含氧氣體為不同氣體。在另一實施例中,含氮氣體和含氧氣體包含相同氣體。濺射期間,諸如二硼烷(B2
H6
)、二氧化碳(CO2
)、一氧化碳(CO)、甲烷(CH4
)和其組合物之添加劑也可額外提供給腔室。
沉積半導體層110後,沉積導電層112。在一實施例中,導電層112包含金屬,例如鋁、鎢、鉬、鉻、鉭和其組合物。導電層112可以濺射沉積而得。
沉積導電層112後,蝕去部分導電層112,以界定源極114、汲極116和主動通道118。部分半導體層110亦被蝕刻移除。儘管圖未繪示,沉積導電層前,尚可沉積蝕刻終止層至半導體層110上。蝕刻終止層用來保護主動通道118,以免其於蝕刻時不當暴露至電漿。
第2圖為根據本發明另一實施例之TFT 200的示意性截面圖。TFT 200包括位於基板202上的閘極電極204。其尚有源極214、汲極216、主動通道216和半導體層210。其還包括多層閘極介電層。閘極介電層具有第一閘極介電層206和第二閘極介電層208。在一實施例中,第一閘極介電層206包含氮化矽。在一實施例中,第二閘極介電層208包含氧化矽。如上所述,氧化矽雖未應用到矽基TFT,但仍有益於金屬氧化物TFT。
表I列出數種TFT的比較結果,除了處理閘極介電層的方法不同外,其實質相同。各實施例的閘極介電層採用氮化矽。
備有氮化矽閘極介電層的TFT不加以處理。沉積閘極介電層後,半導體層沉積其上,且不暴露閘極介電層至大氣。TFT的遷移率為9.78平方公分/伏特-秒(cm2
/V-s)、次臨界斜率為2V/dec。
TFT備有氮化矽閘極介電層和氧化矽層沉積其上。閘極介電層不進一步處理。沉積氧化矽層後,半導體層沉積其上,且不暴露閘極介電層或氧化矽層至大氣。TFT的遷移率為7.65cm2
/V-s、次臨界斜率為1.48V/dec。
TFT備有氮化矽閘極介電層並N2
O電漿。半導體層沉積其上,且不暴露閘極介電層至大氣。TFT的遷移率為7.84cm2
/V-s、次臨界斜率為1.42V/dec。
TFT備有氮化矽閘極介電層並暴露至PH3
電漿。半導體層沉積其上,且不暴露閘極介電層至大氣。TFT的遷
移率小於1cm2
/V-s、次臨界斜率大於4V/dec。
TFT備有氮化矽閘極介電層並暴露至NH3
電漿。半導體層沉積其上,且不暴露閘極介電層至大氣。TFT的遷移率為6.28cm2
/V-s、次臨界斜率為2.34V/dec。
TFT備有氮化矽閘極介電層並暴露至H2
電漿。半導體層沉積其上,且不暴露閘極介電層至大氣。TFT的遷移率為2.5cm2
/V-s、次臨界斜率為2.8V/dec。
TFT備有氮化矽閘極介電層並暴露至氬電漿。半導體層沉積其上,且不暴露閘極介電層至大氣。TFT的遷移率為2.9cm2
/V-s、次臨界斜率為2.8V/dec。
TFT備有氮化矽閘極介電層並暴露至大氣。半導體層接著沉積在氮化矽層上。TFT的遷移率為6.2cm2
/V-s、次臨界斜率為1.84V/dec。
TFT備有氮化矽閘極介電層並暴露至N2
電漿。半導體層沉積其上,且不暴露閘極介電層至大氣。TFT的遷移率為2.9cm2
/V-s、次臨界斜率為2.8V/dec。
如上述實施例所示,處理閘極介電層會影響次臨界斜率和遷移率。氮化矽層附加氧化矽層將製造具有良好遷移率和極佳次臨界斜率的TFT。此外,以N2
O電漿處理
將製造具有良好遷移率和極佳次臨界斜率的TFT。雖然氧化矽TFT和以N2
O電漿處理的遷移率均小於未經處理的TFT,但次臨界斜率明顯更好。反之,以氬電漿、H2
電漿、NH3
電漿或N2
電漿處理將導致次臨界斜率變得更糟。故處理閘極介電層的方式會影響TFT的效能。咸信N2
O電漿中的氧會減少氮化矽或打斷矽氮鍵及鈍化表面。
第3圖顯示根據本發明一實施例,在沉積主動層材料前,電漿處理閘極介電層的作用曲線圖。第3圖顯示四種不同結果,包括未處理、暴露至N2
O電漿、施予N2
O電漿後暴露至H2
電漿、和施予N2
O電漿後暴露至NH3
電漿。雖然僅以H2
電漿或NH3
電漿處理閘極介電層不會提供如上述實施例般的好結果,但施予N2
O電漿後暴露至H2
電漿或NH3
電漿能產生媲美只以N2
O電漿處理的次臨界斜率。
此亦研究額外處理閘極介電層。例如,閘極介電層暴露至不含電漿之N2
O氣體後、接著暴露至N2
O電漿。
第4A圖顯示根據本發明一實施例,閘極介電層之沉積溫度的作用曲線圖。如第4A圖所示,相較於在350℃下沉積的氮化矽閘極介電層或在400℃下沉積且經退火處理的氧化矽閘極介電層,在200℃下沉積的氮化矽閘極介電層有更正的Vth。然氧化矽TFT的次臨界斜率較小。
第4B圖顯示根據本發明一實施例,以NH3
電漿處理閘極介電層的作用曲線圖。如第4B圖所示,相較於在
350℃下沉積且暴露於NH3
中的氮化矽閘極介電層,在200℃下沉積且暴露於NH3
中的氮化矽閘極介電層有更正的Vth和較小的次臨界斜率。
第5圖顯示根據本發明一實施例,在沉積主動層材料前,以N2
O電漿處理閘極介電層的作用曲線圖。表II列出第5圖之三種TFT的遷移率和次臨界斜率值。
在第5圖之TFT中,各TFT設有在200℃下沉積的氮化矽閘極介電層。TFT 2是在沉積半導體層前,以N2
O電漿處理閘極介電層而製得。相較於在沉積半導體層前未以N2
O電漿處理的TFT 1和TFT 3,TFT 2有較高的遷移率和較小的次臨界斜率。未經電漿處理的TFT差異在於TFT 3已老化4個月。
第6A及6B圖顯示根據本發明一實施例,在沉積主動
層材料前,暴露於N2
O中及N2
O電漿處理閘極介電層的作用曲線圖。表III列出第6A及6B圖之四種基板的次臨界斜率和飽和遷移率。
N2
O處理包含暴露沉積之閘極介電層至N2
O氣體。N2
O清潔包含暴露沉積之閘極介電層至N2
O電漿。N2
O清潔
的作用比N2
O處理強。但N2
O處理會降低Ioff
。N2
O清潔和N2
O處理均會降低次臨界斜率。同時進行N2
O清潔和N2
O處理時,次臨界斜率降低更甚。同時進行N2
O清潔和N2
O處理時,飽和遷移率亦大幅下降。如表III所示,進行N2
O清潔獲得之10Vds下的Vg遠大於未處理或N2
O處理獲得之Vg。
第7A及7B圖顯示根據本發明一實施例,在沉積主動層材料前,暴露至N2
O之溫度和N2
O電漿處理閘極介電層之溫度的作用曲線圖。第7A圖顯示在200℃下暴露至N2
O氣體及/或N2
O電漿處理的結果。第7B圖顯示在300℃下暴露至N2
O氣體及/或N2
O電漿處理的結果。在閘極介電層暴露至N2
O氣體的情況下,先進行N2
O電漿處理。暴露至N2
O氣體對次臨界斜率的影響很小。
雖然上述已以N2
O為例當作電漿處理及氣體暴露的暴露氣體,但含氧氣體也有同樣的效果。例如,當理解O2
、CO2
和其組合物可做為暴露氣體或電漿氣體。基板溫度可維持呈室溫至約400℃。在一實施例中,室溫為約25℃。處理步驟可採行多個步驟,且各步驟利用不同的處理氣體。例如,使用含氧氣體(如N2
O、O2
或CO2
)之初步處理可用於第一處理步驟。接著,使用不同的氣體(如H2
、PH3
和其組合物)進行第二處理步驟。在一實施例中,二步驟包含電漿暴露。在另一實施例中,第一步驟包含電漿處理,第二步驟包含不使用電漿之氣體暴露。在又一實施例中,進行超過兩個以上的步驟。
藉由將氧化矽層設於閘極介電層上、或以含氧氣體處理閘極介電層,可改進TFT的次臨界斜率及/或遷移率。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧TFT
102‧‧‧基板
104‧‧‧閘極電極
106‧‧‧閘極介電層
108‧‧‧電漿
110‧‧‧半導體層
112‧‧‧導電層
114‧‧‧源極
116‧‧‧汲極
118‧‧‧主動通道
200‧‧‧TFT
202‧‧‧基板
204‧‧‧閘極電極
206、208‧‧‧閘極介電層
210‧‧‧半導體層
212‧‧‧源極
214‧‧‧汲極
216‧‧‧主動通道
為讓本發明之上述特徵更明顯易懂,可配合參考實施例說明,其部分乃繪示如附圖式。須注意的是,雖然所附圖式揭露本發明特定實施例,但其並非用以限定本發明之精神與範圍,因為本發明可允許其他等效的實施例。
第1A-1F圖為根據本發明一實施例之TFT 100於不同製造階段的示意性截面圖。
第2圖為根據本發明另一實施例之TFT 200的示意性截面圖。
第3圖顯示根據本發明一實施例,在沉積主動層材料前,電漿處理閘極介電層的作用曲線圖。
第4A圖顯示根據本發明一實施例,閘極介電層之沉積溫度的作用曲線圖。
第4B圖顯示根據本發明一實施例,在沉積主動層材料前,以NH3
電漿處理及退火處理閘極介電層的作用曲線圖。
第5圖顯示根據本發明一實施例,在沉積主動層材料前,以N2
O電漿處理閘極介電層的作用曲線圖。
第6A及6B圖顯示根據本發明一實施例,在沉積主動層材料前,暴露於N2
O中及N2
O電漿處理閘極介電層的作用曲線圖。
第7A及7B圖顯示根據本發明一實施例,在沉積主動層材料前,暴露至N2
O之溫度和N2
O電漿處理閘極介電層之溫度的作用曲線圖。
為助於了解,各圖中共通的元件以相同的元件符號表示。應理解某一實施例所揭露的元件當可用於其他實施例,而不需特別提及。
200...TFT
202...基板
204...閘極電極
206、208...閘極介電層
210...半導體層
212...源極
214...汲極
216...主動通道
Claims (17)
- 一種薄膜電晶體製造方法,該方法包含:沉積一閘極介電層至一閘極電極和一基板上;暴露該閘極介電層至一含氧電漿;濺射沉積一氮氧化物半導體層至該閘極介電層上,該半導體層包含氧、氮、及一或多個選自由鋅、鎵、銦、鎘、錫和上述之組合構成之群組的元素;沉積一導電層至該半導體層上;以及蝕刻該導電層而界定一源極與一汲極和一主動通道,該主動通道暴露出該半導體層的一部分。
- 如申請專利範圍第1項所述之方法,其中該閘極介電層包含氮化矽、氧化矽、或由氮化矽與氧化矽組成之一雙層。
- 如申請專利範圍第1項所述之方法,更包含在暴露該閘極介電層至該含氧電漿後,暴露該閘極介電層至一氫電漿。
- 如申請專利範圍第1項所述之方法,其中該暴露步驟是在與沉積該閘極介電層相同位置處進行。
- 如申請專利範圍第1項所述之方法,其中該含氧電漿 包含N2 O。
- 一種薄膜電晶體製造方法,該方法包含:沉積一氮化矽層至一閘極電極和一基板上;沉積一氧化矽層至該氮化矽層上;濺射沉積一氮氧化物半導體層至該氧化矽層上,該半導體層包含氧、氮、及一或多個選自由鋅、鎵、銦、鎘、錫和上述之組合構成之群組的元素;沉積一導電層至該半導體層上;以及蝕刻該導電層而界定一源極與一汲極和一主動通道,該主動通道暴露出該半導體層的一部分。
- 如申請專利範圍第6項所述之方法,更包含暴露該氧化矽層至一N2 O電漿。
- 如申請專利範圍第7項所述之方法,更包含在暴露該氧化矽層至該N2 O電漿後,暴露該氧化矽層至一氫電漿。
- 如申請專利範圍第7項所述之方法,其中該暴露步驟是在與沉積該氧化矽層相同位置處進行。
- 如申請專利範圍第7項所述之方法,更包含在暴露至該N2 O電漿後,暴露該氧化矽層至一氧電漿。
- 一種薄膜電晶體製造方法,該方法包含:沉積一氧化矽層至一閘極電極和一基板上;濺射沉積一氮氧化物半導體層至該氧化矽層上,該半導體層包含氧、氮、及一或多個選自由鋅、鎵、銦、鎘、錫和上述之組合構成之群組的元素;沉積一導電層至該半導體層上;以及蝕刻該導電層而界定一源極與一汲極和一主動通道,該主動通道暴露出該半導體層的一部分。
- 如申請專利範圍第11項所述之方法,更包含暴露該氧化矽層至一N2 O電漿。
- 如申請專利範圍第12項所述之方法,更包含在暴露該氧化矽層至該N2 O電漿後,暴露該氧化矽層至一氫電漿。
- 如申請專利範圍第12項所述之方法,其中該暴露步驟是在與沉積該氧化矽層相同位置處進行。
- 如申請專利範圍第12項所述之方法,更包含在暴露至該N2 O電漿後,暴露該氧化矽層至一氧電漿。
- 一種薄膜電晶體,至少包含:一氧化矽層,該氧化矽層位於一閘極電極和一基板 上;一氮氧化物半導體層,該氮氧化物半導體層位於該氧化矽層上,該半導體層包含氧、氮、及一或多個選自由鋅、鎵、銦、鎘、錫和上述之組合構成之群組的元素;以及一源極與一汲極,該源極與該汲極位於該半導體層上,該源極和該汲極彼此相隔而暴露出該半導體層的一部分。
- 如申請專利範圍第16項所述之電晶體,更包含一氮化矽層,該氮化矽層位於該閘極電極和該基板之上且位於該氧化矽層之下。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7783108P | 2008-07-02 | 2008-07-02 | |
US11774408P | 2008-11-25 | 2008-11-25 | |
US11774708P | 2008-11-25 | 2008-11-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201017755A TW201017755A (en) | 2010-05-01 |
TWI385729B true TWI385729B (zh) | 2013-02-11 |
Family
ID=41463667
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098121225A TWI394282B (zh) | 2008-07-02 | 2009-06-24 | 使用多主動通道層之薄膜電晶體 |
TW098122272A TWI459474B (zh) | 2008-07-02 | 2009-07-01 | 金屬氮氧化物薄膜電晶體之覆蓋層 |
TW098122449A TWI385729B (zh) | 2008-07-02 | 2009-07-02 | 用以製造高效能金屬氧化物和金屬氮氧化物薄膜電晶體之閘極介電層處理 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098121225A TWI394282B (zh) | 2008-07-02 | 2009-06-24 | 使用多主動通道層之薄膜電晶體 |
TW098122272A TWI459474B (zh) | 2008-07-02 | 2009-07-01 | 金屬氮氧化物薄膜電晶體之覆蓋層 |
Country Status (6)
Country | Link |
---|---|
US (6) | US8258511B2 (zh) |
JP (3) | JP5744726B2 (zh) |
KR (3) | KR101621840B1 (zh) |
CN (4) | CN102124569B (zh) |
TW (3) | TWI394282B (zh) |
WO (3) | WO2010002608A2 (zh) |
Families Citing this family (105)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101150142B1 (ko) * | 2006-04-06 | 2012-06-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 기판 상에 아연 산화물 투명 전도성 산화물의 반응성 스퍼터링 |
KR101603180B1 (ko) * | 2007-08-02 | 2016-03-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 반도체 물질들을 이용하는 박막 트랜지스터들 |
US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
WO2009117438A2 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
JP5345456B2 (ja) * | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101906751B1 (ko) * | 2009-03-12 | 2018-10-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
JP5663214B2 (ja) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2011037829A2 (en) | 2009-09-24 | 2011-03-31 | Applied Materials, Inc. | Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch |
US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
KR101490726B1 (ko) * | 2009-10-21 | 2015-02-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8299466B2 (en) | 2009-11-03 | 2012-10-30 | Applied Materials, Inc. | Thin film transistors having multiple doped silicon layers |
KR101035357B1 (ko) * | 2009-12-15 | 2011-05-20 | 삼성모바일디스플레이주식회사 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
KR101701208B1 (ko) | 2010-01-15 | 2017-02-02 | 삼성디스플레이 주식회사 | 표시 기판 |
KR102047354B1 (ko) | 2010-02-26 | 2019-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101826831B1 (ko) * | 2010-04-23 | 2018-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR101877377B1 (ko) | 2010-04-23 | 2018-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
JP5606787B2 (ja) * | 2010-05-18 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法、並びに、薄膜トランジスタ、イメージセンサー、x線センサー及びx線デジタル撮影装置 |
US8883555B2 (en) * | 2010-08-25 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, manufacturing method of electronic device, and sputtering target |
US7976727B1 (en) * | 2010-08-25 | 2011-07-12 | The United States Of America As Represented By The Secretary Of The Air Force | Chromium-doped zinc-nitro-antimony-gallium-tellurium infrared phosphors |
TWI405335B (zh) * | 2010-09-13 | 2013-08-11 | Au Optronics Corp | 半導體結構及其製造方法 |
US8338240B2 (en) * | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
US9911857B2 (en) * | 2010-10-29 | 2018-03-06 | Cbrite Inc. | Thin film transistor with low trap-density material abutting a metal oxide active layer and the gate dielectric |
TWI555205B (zh) * | 2010-11-05 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
TWI593115B (zh) | 2010-11-11 | 2017-07-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI471946B (zh) | 2010-11-17 | 2015-02-01 | Innolux Corp | 薄膜電晶體 |
US8912536B2 (en) | 2010-11-19 | 2014-12-16 | Samsung Electronics Co., Ltd. | Transistors, methods of manufacturing the same and electronic devices including transistors |
JP5284544B2 (ja) * | 2010-12-20 | 2013-09-11 | シャープ株式会社 | 半導体装置および表示装置 |
US20130271690A1 (en) * | 2010-12-27 | 2013-10-17 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
JP5897910B2 (ja) * | 2011-01-20 | 2016-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8669552B2 (en) * | 2011-03-02 | 2014-03-11 | Applied Materials, Inc. | Offset electrode TFT structure |
TWI541904B (zh) | 2011-03-11 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
TWI455322B (zh) * | 2011-04-22 | 2014-10-01 | Au Optronics Corp | 薄膜電晶體及其製造方法 |
US9166055B2 (en) * | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9553195B2 (en) * | 2011-06-30 | 2017-01-24 | Applied Materials, Inc. | Method of IGZO and ZNO TFT fabrication with PECVD SiO2 passivation |
KR101459502B1 (ko) | 2011-07-13 | 2014-11-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 트랜지스터 디바이스들을 제조하는 방법들 |
WO2013052298A1 (en) * | 2011-10-07 | 2013-04-11 | Applied Materials, Inc. | Methods for depositing a silicon containing layer with argon gas dilution |
KR101878731B1 (ko) | 2011-12-06 | 2018-07-17 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
KR101920713B1 (ko) * | 2011-12-23 | 2018-11-22 | 삼성전자주식회사 | 그래핀 소자 및 그 제조방법 |
TWI470808B (zh) | 2011-12-28 | 2015-01-21 | Au Optronics Corp | 半導體元件及其製作方法 |
US9120111B2 (en) | 2012-02-24 | 2015-09-01 | Rain Bird Corporation | Arc adjustable rotary sprinkler having full-circle operation and automatic matched precipitation |
KR102140719B1 (ko) * | 2012-03-09 | 2020-08-03 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 디스플레이 디바이스를 위한 배리어 물질 |
CN102593050B (zh) * | 2012-03-09 | 2014-08-20 | 深超光电(深圳)有限公司 | 一种液晶显示面板阵列基板的制作方法 |
US8901556B2 (en) | 2012-04-06 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
KR20130117558A (ko) | 2012-04-18 | 2013-10-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법 |
KR101980195B1 (ko) | 2012-05-16 | 2019-05-21 | 삼성전자주식회사 | 황 도핑 징크옥시 나이트라이드 채널층을 가진 트랜지스터 및 그 제조방법 |
CN103474467B (zh) * | 2012-06-05 | 2016-04-13 | 元太科技工业股份有限公司 | 薄膜晶体管结构及其阵列基板 |
TWI493726B (zh) * | 2012-06-05 | 2015-07-21 | E Ink Holdings Inc | 薄膜電晶體結構及其陣列基板 |
JP6002088B2 (ja) * | 2012-06-06 | 2016-10-05 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
JP5972065B2 (ja) * | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
KR101975929B1 (ko) | 2012-06-29 | 2019-05-09 | 삼성전자주식회사 | 질산화물 채널층을 구비한 트랜지스터 및 그 제조방법 |
TWI596778B (zh) | 2012-06-29 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
CN107026089B (zh) * | 2012-06-29 | 2021-12-03 | 株式会社半导体能源研究所 | 用于制造半导体装置的方法 |
US9156043B2 (en) | 2012-07-13 | 2015-10-13 | Rain Bird Corporation | Arc adjustable rotary sprinkler with automatic matched precipitation |
KR20140021118A (ko) | 2012-08-07 | 2014-02-20 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
TWI533457B (zh) | 2012-09-11 | 2016-05-11 | 元太科技工業股份有限公司 | 薄膜電晶體 |
KR20140043526A (ko) | 2012-09-21 | 2014-04-10 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN102891183B (zh) * | 2012-10-25 | 2015-09-30 | 深圳市华星光电技术有限公司 | 薄膜晶体管及主动矩阵式平面显示装置 |
US20140117511A1 (en) * | 2012-10-30 | 2014-05-01 | Infineon Technologies Ag | Passivation Layer and Method of Making a Passivation Layer |
TWI484559B (zh) * | 2013-01-07 | 2015-05-11 | Univ Nat Chiao Tung | 一種半導體元件製程 |
TWI614813B (zh) | 2013-01-21 | 2018-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP6370048B2 (ja) * | 2013-01-21 | 2018-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR102044971B1 (ko) | 2013-02-12 | 2019-11-15 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20150127122A (ko) * | 2013-03-01 | 2015-11-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 옥사이드 tft 안정성 개선 |
US9245809B2 (en) | 2013-03-12 | 2016-01-26 | Applied Materials, Inc. | Pin hole evaluation method of dielectric films for metal oxide semiconductor TFT |
WO2014159033A1 (en) * | 2013-03-13 | 2014-10-02 | Applied Materials, Inc. | Vth control method of multiple active layer metal oxide semiconductor tft |
CN105051907A (zh) * | 2013-03-19 | 2015-11-11 | 应用材料公司 | 多层钝化或蚀刻终止tft |
KR101995920B1 (ko) * | 2013-04-17 | 2019-10-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102166272B1 (ko) | 2013-05-23 | 2020-10-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 표시 기판 및 박막 트랜지스터의 제조 방법 |
US20160118244A1 (en) * | 2013-06-04 | 2016-04-28 | Joled Inc. | Thin film transistor element, production method for same, and display device |
KR20150025621A (ko) * | 2013-08-29 | 2015-03-11 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
KR102115564B1 (ko) | 2013-09-24 | 2020-05-27 | 삼성디스플레이 주식회사 | 표시기판 및 이를 포함하는 표시패널 |
CN103500710B (zh) * | 2013-10-11 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种薄膜晶体管制作方法、薄膜晶体管及显示设备 |
KR102149795B1 (ko) * | 2013-12-13 | 2020-08-31 | 삼성전기주식회사 | 레지스트 필름 및 패턴 형성 방법 |
US9246013B2 (en) | 2013-12-18 | 2016-01-26 | Intermolecular, Inc. | IGZO devices with composite channel layers and methods for forming the same |
US20150177311A1 (en) * | 2013-12-19 | 2015-06-25 | Intermolecular, Inc. | Methods and Systems for Evaluating IGZO with Respect to NBIS |
US9704888B2 (en) | 2014-01-08 | 2017-07-11 | Apple Inc. | Display circuitry with reduced metal routing resistance |
US9530801B2 (en) | 2014-01-13 | 2016-12-27 | Apple Inc. | Display circuitry with improved transmittance and reduced coupling capacitance |
KR102163730B1 (ko) | 2014-03-25 | 2020-10-08 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
CN104167449B (zh) * | 2014-08-05 | 2017-09-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
CN104167448B (zh) * | 2014-08-05 | 2017-06-30 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
KR101636146B1 (ko) * | 2014-09-16 | 2016-07-07 | 한양대학교 산학협력단 | 박막 트랜지스터 및 그 제조 방법 |
JP2016076599A (ja) * | 2014-10-06 | 2016-05-12 | 株式会社Joled | 薄膜トランジスタ及びその製造方法 |
JP6358595B2 (ja) * | 2014-10-07 | 2018-07-18 | 株式会社Joled | 薄膜トランジスタの製造方法 |
KR20160065318A (ko) * | 2014-11-28 | 2016-06-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US9887277B2 (en) * | 2015-01-23 | 2018-02-06 | Applied Materials, Inc. | Plasma treatment on metal-oxide TFT |
US20160240563A1 (en) * | 2015-02-13 | 2016-08-18 | Electronics And Telecommunications Research Institute | Semiconductor device and method of fabricating the same |
CN104795449B (zh) | 2015-04-16 | 2016-04-27 | 京东方科技集团股份有限公司 | 薄膜晶体管及制作方法、阵列基板、显示装置 |
US20160308067A1 (en) * | 2015-04-17 | 2016-10-20 | Ishiang Shih | Metal oxynitride transistor devices |
CN105518845A (zh) * | 2015-09-15 | 2016-04-20 | 京东方科技集团股份有限公司 | 一种薄膜晶体管阵列基板及其制备方法、显示装置 |
US9646886B1 (en) | 2015-12-30 | 2017-05-09 | International Business Machines Corporation | Tailored silicon layers for transistor multi-gate control |
KR101707039B1 (ko) * | 2016-03-21 | 2017-02-16 | 삼성디스플레이 주식회사 | 표시 기판 |
WO2018146569A1 (ja) * | 2017-02-07 | 2018-08-16 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
KR102556021B1 (ko) * | 2017-10-13 | 2023-07-17 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
WO2019132997A1 (en) * | 2017-12-29 | 2019-07-04 | Intel Corporation | Memory device with negative resistance materials |
KR102520541B1 (ko) * | 2018-02-14 | 2023-04-10 | 엘지디스플레이 주식회사 | 산화물 박막의 제조 장치와 제조 방법 및 그 산화물 박막을 포함하는 디스플레이 장치 |
TWI689096B (zh) * | 2018-08-24 | 2020-03-21 | 友達光電股份有限公司 | 金屬氧化物結晶結構及具有此金屬氧化物結晶結構之顯示面板的電路結構及薄膜電晶體 |
CN109637923B (zh) * | 2018-11-14 | 2021-06-11 | 惠科股份有限公司 | 一种显示基板及其制作方法和显示装置 |
KR102657866B1 (ko) | 2019-06-10 | 2024-04-17 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
CN110310985A (zh) * | 2019-07-05 | 2019-10-08 | 山东大学 | 一种基于双有源层的铟铝锌氧化物薄膜晶体管及其制备方法 |
CN112376024B (zh) * | 2020-10-26 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 一种氧化物薄膜的制备方法 |
US20220190121A1 (en) * | 2020-12-14 | 2022-06-16 | Intel Corporation | Transistor channel materials |
JP2022112246A (ja) * | 2021-01-21 | 2022-08-02 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
KR102654960B1 (ko) | 2021-06-17 | 2024-04-05 | 대한민국 | 살균 재배 장치 및 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW329558B (en) * | 1996-09-20 | 1998-04-11 | Taiwan Semiconductor Mfg Co Ltd | The method & apparatus for manufacturing DRAM & SRAM on single semiconductor chip |
US20070026321A1 (en) * | 2005-07-29 | 2007-02-01 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
US20070252152A1 (en) * | 2006-04-26 | 2007-11-01 | Epson Imaging Devices Corporation | Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device |
Family Cites Families (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4331737A (en) | 1978-04-01 | 1982-05-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Oxynitride film and its manufacturing method |
DE3066027D1 (en) * | 1979-12-17 | 1984-02-02 | Hughes Aircraft Co | Low temperature process for depositing oxide layers by photochemical vapor deposition |
FR2579754B1 (fr) | 1985-04-02 | 1987-07-31 | Centre Nat Rech Scient | Nitrures et oxynitrures utiles comme detecteurs selectifs de gaz reducteurs dans l'atmosphere, et dispositif de detection les contenant |
US4759993A (en) * | 1985-04-25 | 1988-07-26 | Ovonic Synthetic Materials Co., Inc. | Plasma chemical vapor deposition SiO2-x coated articles and plasma assisted chemical vapor deposition method of applying the coating |
US4769291A (en) | 1987-02-02 | 1988-09-06 | The Boc Group, Inc. | Transparent coatings by reactive sputtering |
US4816082A (en) | 1987-08-19 | 1989-03-28 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
FR2638527B1 (fr) | 1988-11-02 | 1991-02-01 | Centre Nat Rech Scient | Nitrure et oxynitrures de gallium utiles comme detecteurs selectifs de gaz reducteurs dans l'atmosphere, procede pour leur preparation, et dispositif de detection les contenant |
CA2034118A1 (en) | 1990-02-09 | 1991-08-10 | Nang Tri Tran | Solid state radiation detector |
JP2999280B2 (ja) | 1991-02-22 | 2000-01-17 | キヤノン株式会社 | 光起電力素子 |
JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
JP2885547B2 (ja) * | 1991-07-05 | 1999-04-26 | 新日本製鐵株式会社 | 二酸化シリコン薄膜の製造方法 |
JP2994812B2 (ja) | 1991-09-26 | 1999-12-27 | キヤノン株式会社 | 太陽電池 |
US5346601A (en) | 1993-05-11 | 1994-09-13 | Andrew Barada | Sputter coating collimator with integral reactive gas distribution |
TW273067B (zh) | 1993-10-04 | 1996-03-21 | Tokyo Electron Co Ltd | |
JPH07131030A (ja) | 1993-11-05 | 1995-05-19 | Sony Corp | 表示用薄膜半導体装置及びその製造方法 |
JP3571785B2 (ja) | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
US5620523A (en) | 1994-04-11 | 1997-04-15 | Canon Sales Co., Inc. | Apparatus for forming film |
US5522934A (en) | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
US5668663A (en) | 1994-05-05 | 1997-09-16 | Donnelly Corporation | Electrochromic mirrors and devices |
US5700699A (en) | 1995-03-16 | 1997-12-23 | Lg Electronics Inc. | Method for fabricating a polycrystal silicon thin film transistor |
JP3306258B2 (ja) | 1995-03-27 | 2002-07-24 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP3169337B2 (ja) | 1995-05-30 | 2001-05-21 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
US6969635B2 (en) | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US5716480A (en) | 1995-07-13 | 1998-02-10 | Canon Kabushiki Kaisha | Photovoltaic device and method of manufacturing the same |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
US5625199A (en) | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
US6153013A (en) | 1996-02-16 | 2000-11-28 | Canon Kabushiki Kaisha | Deposited-film-forming apparatus |
US6746959B2 (en) | 1996-07-26 | 2004-06-08 | Lg Philips Lcd Co., Ltd. | Liquid crystal display and method |
KR100251070B1 (ko) | 1996-08-28 | 2000-04-15 | 미다라이 후지오 | 광기전력 소자 |
US6159763A (en) | 1996-09-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element |
US5993594A (en) | 1996-09-30 | 1999-11-30 | Lam Research Corporation | Particle controlling method and apparatus for a plasma processing chamber |
US6432203B1 (en) | 1997-03-17 | 2002-08-13 | Applied Komatsu Technology, Inc. | Heated and cooled vacuum chamber shield |
US6238527B1 (en) | 1997-10-08 | 2001-05-29 | Canon Kabushiki Kaisha | Thin film forming apparatus and method of forming thin film of compound by using the same |
JP4208281B2 (ja) | 1998-02-26 | 2009-01-14 | キヤノン株式会社 | 積層型光起電力素子 |
TW410478B (en) | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US6388301B1 (en) | 1998-06-01 | 2002-05-14 | Kaneka Corporation | Silicon-based thin-film photoelectric device |
US6488824B1 (en) | 1998-11-06 | 2002-12-03 | Raycom Technologies, Inc. | Sputtering apparatus and process for high rate coatings |
US7235810B1 (en) | 1998-12-03 | 2007-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US20020084455A1 (en) | 1999-03-30 | 2002-07-04 | Jeffery T. Cheung | Transparent and conductive zinc oxide film with low growth temperature |
US6426245B1 (en) * | 1999-07-09 | 2002-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
KR100590925B1 (ko) | 1999-07-30 | 2006-06-19 | 비오이 하이디스 테크놀로지 주식회사 | 박막트랜지스터-액정표시장치의 제조방법 |
US6228236B1 (en) | 1999-10-22 | 2001-05-08 | Applied Materials, Inc. | Sputter magnetron having two rotation diameters |
JP4562835B2 (ja) * | 1999-11-05 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6953947B2 (en) | 1999-12-31 | 2005-10-11 | Lg Chem, Ltd. | Organic thin film transistor |
US6620719B1 (en) | 2000-03-31 | 2003-09-16 | International Business Machines Corporation | Method of forming ohmic contacts using a self doping layer for thin-film transistors |
KR100679917B1 (ko) | 2000-09-09 | 2007-02-07 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 및 그 제조방법 |
US6787010B2 (en) | 2000-11-30 | 2004-09-07 | North Carolina State University | Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
JP2002252353A (ja) | 2001-02-26 | 2002-09-06 | Hitachi Ltd | 薄膜トランジスタおよびアクティブマトリクス型液晶表示装置 |
KR100491141B1 (ko) | 2001-03-02 | 2005-05-24 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조방법과 이를 이용한 액티브매트릭스형 표시소자 및 그의 제조방법 |
US6943359B2 (en) | 2001-03-13 | 2005-09-13 | University Of Utah | Structured organic materials and devices using low-energy particle beams |
US6740938B2 (en) | 2001-04-16 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Transistor provided with first and second gate electrodes with channel region therebetween |
JP4560245B2 (ja) | 2001-06-29 | 2010-10-13 | キヤノン株式会社 | 光起電力素子 |
US20030049464A1 (en) | 2001-09-04 | 2003-03-13 | Afg Industries, Inc. | Double silver low-emissivity and solar control coatings |
JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
US20030207093A1 (en) | 2001-12-03 | 2003-11-06 | Toshio Tsuji | Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer |
JP3819793B2 (ja) * | 2002-03-15 | 2006-09-13 | 三洋電機株式会社 | 成膜方法及び半導体装置の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
US6825134B2 (en) | 2002-03-26 | 2004-11-30 | Applied Materials, Inc. | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
US7238545B2 (en) | 2002-04-09 | 2007-07-03 | Kaneka Corporation | Method for fabricating tandem thin film photoelectric converter |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
US7189992B2 (en) | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
SG130013A1 (en) | 2002-07-25 | 2007-03-20 | Semiconductor Energy Lab | Method of fabricating light emitting device |
TW571342B (en) * | 2002-12-18 | 2004-01-11 | Au Optronics Corp | Method of forming a thin film transistor |
DE60334407D1 (de) | 2002-12-31 | 2010-11-11 | Cardinal Cg Co | Beschichtungsgerät mit einem reinigungsgerät für substrat und beschichtungsverfahren, das ein solches beschichtungsgerät benutzt |
JP4417072B2 (ja) * | 2003-03-28 | 2010-02-17 | シャープ株式会社 | 液晶表示装置用基板及びそれを用いた液晶表示装置 |
TWI227565B (en) * | 2003-04-16 | 2005-02-01 | Au Optronics Corp | Low temperature poly-Si thin film transistor and method of manufacturing the same |
JP2004363560A (ja) | 2003-05-09 | 2004-12-24 | Seiko Epson Corp | 基板、デバイス、デバイス製造方法、アクティブマトリクス基板の製造方法及び電気光学装置並びに電子機器 |
JP5068946B2 (ja) | 2003-05-13 | 2012-11-07 | 旭硝子株式会社 | 太陽電池用透明導電性基板およびその製造方法 |
TWI222753B (en) | 2003-05-20 | 2004-10-21 | Au Optronics Corp | Method for forming a thin film transistor of an organic light emitting display |
JP4344270B2 (ja) | 2003-05-30 | 2009-10-14 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
TWI399580B (zh) * | 2003-07-14 | 2013-06-21 | Semiconductor Energy Lab | 半導體裝置及顯示裝置 |
US20050017244A1 (en) | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
US7816863B2 (en) | 2003-09-12 | 2010-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing the same |
US7520790B2 (en) | 2003-09-19 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
JP4823478B2 (ja) | 2003-09-19 | 2011-11-24 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
TWI224868B (en) | 2003-10-07 | 2004-12-01 | Ind Tech Res Inst | Method of forming poly-silicon thin film transistor |
US7026713B2 (en) | 2003-12-17 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Transistor device having a delafossite material |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
WO2005088726A1 (ja) | 2004-03-12 | 2005-09-22 | Japan Science And Technology Agency | アモルファス酸化物及び薄膜トランジスタ |
US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7122398B1 (en) | 2004-03-25 | 2006-10-17 | Nanosolar, Inc. | Manufacturing of optoelectronic devices |
US20050233092A1 (en) | 2004-04-20 | 2005-10-20 | Applied Materials, Inc. | Method of controlling the uniformity of PECVD-deposited thin films |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7125758B2 (en) | 2004-04-20 | 2006-10-24 | Applied Materials, Inc. | Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors |
JP2008502151A (ja) | 2004-06-04 | 2008-01-24 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 印刷可能半導体素子を製造して組み立てるための方法及びデバイス |
US7158208B2 (en) | 2004-06-30 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060011139A1 (en) | 2004-07-16 | 2006-01-19 | Applied Materials, Inc. | Heated substrate support for chemical vapor deposition |
KR100721555B1 (ko) | 2004-08-13 | 2007-05-23 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
US7378286B2 (en) | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
US7622338B2 (en) | 2004-08-31 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
CN1293606C (zh) | 2004-09-30 | 2007-01-03 | 浙江大学 | 两步法生长N-Al共掺杂p型ZnO晶体薄膜的方法 |
US7382421B2 (en) | 2004-10-12 | 2008-06-03 | Hewlett-Packard Development Company, L.P. | Thin film transistor with a passivation layer |
JP5138163B2 (ja) * | 2004-11-10 | 2013-02-06 | キヤノン株式会社 | 電界効果型トランジスタ |
KR100998527B1 (ko) | 2004-11-10 | 2010-12-07 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 비정질 산화물 및 전계 효과 트랜지스터 |
TWI251349B (en) * | 2004-11-22 | 2006-03-11 | Au Optronics Corp | Method of forming thin film transistor |
US7309895B2 (en) | 2005-01-25 | 2007-12-18 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7381586B2 (en) * | 2005-06-16 | 2008-06-03 | Industrial Technology Research Institute | Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution |
US7628896B2 (en) | 2005-07-05 | 2009-12-08 | Guardian Industries Corp. | Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same |
KR101167661B1 (ko) * | 2005-07-15 | 2012-07-23 | 삼성전자주식회사 | 배선 구조와 배선 형성 방법 및 박막 트랜지스터 기판과 그제조 방법 |
US20070030569A1 (en) | 2005-08-04 | 2007-02-08 | Guardian Industries Corp. | Broad band antireflection coating and method of making same |
JP4968660B2 (ja) | 2005-08-24 | 2012-07-04 | スタンレー電気株式会社 | ZnO系化合物半導体結晶の製造方法、及び、ZnO系化合物半導体基板 |
KR101188425B1 (ko) * | 2005-08-24 | 2012-10-05 | 엘지디스플레이 주식회사 | 식각 테이프 및 이를 이용한 액정 표시 장치용 어레이기판의 제조 방법 |
JP4870404B2 (ja) * | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製法 |
JP2007073704A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 半導体薄膜 |
KR100729043B1 (ko) | 2005-09-14 | 2007-06-14 | 삼성에스디아이 주식회사 | 투명 박막 트랜지스터 및 그의 제조방법 |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
EP1770788A3 (en) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
US20070068571A1 (en) | 2005-09-29 | 2007-03-29 | Terra Solar Global | Shunt Passivation Method for Amorphous Silicon Thin Film Photovoltaic Modules |
US7727828B2 (en) * | 2005-10-20 | 2010-06-01 | Applied Materials, Inc. | Method for fabricating a gate dielectric of a field effect transistor |
JP5099740B2 (ja) * | 2005-12-19 | 2012-12-19 | 財団法人高知県産業振興センター | 薄膜トランジスタ |
US7576394B2 (en) * | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
KR100785038B1 (ko) | 2006-04-17 | 2007-12-12 | 삼성전자주식회사 | 비정질 ZnO계 TFT |
JP4946156B2 (ja) | 2006-05-01 | 2012-06-06 | 富士ゼロックス株式会社 | 半導体膜及びその製造方法、並びに、該半導体膜を用いた受光素子、電子写真用感光体、プロセスカートリッジ、画像形成装置 |
US20090023959A1 (en) | 2006-06-16 | 2009-01-22 | D Amore Michael B | Process for making dibutyl ethers from dry 1-butanol |
JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP5128792B2 (ja) * | 2006-08-31 | 2013-01-23 | 財団法人高知県産業振興センター | 薄膜トランジスタの製法 |
KR101340514B1 (ko) | 2007-01-24 | 2013-12-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US20080233718A1 (en) * | 2007-03-21 | 2008-09-25 | Jia-Xing Lin | Method of Semiconductor Thin Film Crystallization and Semiconductor Device Fabrication |
WO2008133345A1 (en) * | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR100982395B1 (ko) | 2007-04-25 | 2010-09-14 | 주식회사 엘지화학 | 박막 트랜지스터 및 이의 제조방법 |
US7927713B2 (en) | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
JP5215589B2 (ja) | 2007-05-11 | 2013-06-19 | キヤノン株式会社 | 絶縁ゲート型トランジスタ及び表示装置 |
US20080308411A1 (en) | 2007-05-25 | 2008-12-18 | Energy Photovoltaics, Inc. | Method and process for deposition of textured zinc oxide thin films |
JP5241143B2 (ja) | 2007-05-30 | 2013-07-17 | キヤノン株式会社 | 電界効果型トランジスタ |
US8372250B2 (en) | 2007-07-23 | 2013-02-12 | National Science And Technology Development Agency | Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering |
KR101603180B1 (ko) | 2007-08-02 | 2016-03-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 반도체 물질들을 이용하는 박막 트랜지스터들 |
US20090212287A1 (en) | 2007-10-30 | 2009-08-27 | Ignis Innovation Inc. | Thin film transistor and method for forming the same |
US8980066B2 (en) | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
WO2009117438A2 (en) | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
US7879698B2 (en) | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
EP2184783B1 (en) | 2008-11-07 | 2012-10-03 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and method for manufacturing the same |
US8436350B2 (en) | 2009-01-30 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device using an oxide semiconductor with a plurality of metal clusters |
TWI489628B (zh) | 2009-04-02 | 2015-06-21 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
-
2009
- 2009-03-25 US US12/411,195 patent/US8258511B2/en active Active
- 2009-06-19 WO PCT/US2009/047966 patent/WO2010002608A2/en active Application Filing
- 2009-06-19 KR KR1020117002854A patent/KR101621840B1/ko active IP Right Grant
- 2009-06-19 CN CN2009801255240A patent/CN102124569B/zh not_active Expired - Fee Related
- 2009-06-19 JP JP2011516475A patent/JP5744726B2/ja not_active Expired - Fee Related
- 2009-06-24 TW TW098121225A patent/TWI394282B/zh not_active IP Right Cessation
- 2009-06-29 KR KR1020117002862A patent/KR101670425B1/ko active IP Right Grant
- 2009-06-29 JP JP2011516778A patent/JP5677712B2/ja active Active
- 2009-06-29 US US12/493,699 patent/US8101949B2/en not_active Expired - Fee Related
- 2009-06-29 JP JP2011516775A patent/JP5677711B2/ja active Active
- 2009-06-29 CN CN201510540494.7A patent/CN105097951B/zh not_active Expired - Fee Related
- 2009-06-29 CN CN2009801258889A patent/CN102077356A/zh active Pending
- 2009-06-29 CN CN2009801258893A patent/CN102084470B/zh not_active Expired - Fee Related
- 2009-06-29 KR KR1020117002859A patent/KR101774520B1/ko active IP Right Grant
- 2009-06-29 WO PCT/US2009/049084 patent/WO2010002803A2/en active Application Filing
- 2009-06-29 WO PCT/US2009/049092 patent/WO2010002807A2/en active Application Filing
- 2009-06-29 US US12/493,718 patent/US8012794B2/en active Active
- 2009-07-01 TW TW098122272A patent/TWI459474B/zh active
- 2009-07-02 TW TW098122449A patent/TWI385729B/zh active
-
2011
- 2011-08-22 US US13/215,013 patent/US8809132B2/en active Active
-
2012
- 2012-01-20 US US13/355,316 patent/US8435843B2/en active Active
- 2012-07-24 US US13/556,380 patent/US8349669B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW329558B (en) * | 1996-09-20 | 1998-04-11 | Taiwan Semiconductor Mfg Co Ltd | The method & apparatus for manufacturing DRAM & SRAM on single semiconductor chip |
US20070026321A1 (en) * | 2005-07-29 | 2007-02-01 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
US20070252152A1 (en) * | 2006-04-26 | 2007-11-01 | Epson Imaging Devices Corporation | Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI385729B (zh) | 用以製造高效能金屬氧化物和金屬氮氧化物薄膜電晶體之閘極介電層處理 | |
JP5584960B2 (ja) | 薄膜トランジスタおよび表示装置 | |
US8461597B2 (en) | Transistors, methods of manufacturing a transistor, and electronic devices including a transistor | |
TWI415267B (zh) | 製造具有蝕刻終止層之金屬氧化物薄膜電晶體陣列的製程 | |
KR101536101B1 (ko) | 박막 반도체 물질들을 이용하는 박막 트랜지스터들 | |
TW201320199A (zh) | 於基板上形成矽層之方法、形成矽氧化物層之方法及具有其之金屬氧化物薄膜電晶體元件 | |
KR101417932B1 (ko) | 이중층 구조의 반도체 채널을 구비하는 박막트랜지스터 및 이의 제조방법 | |
KR101876011B1 (ko) | 산화물 박막 트랜지스터 및 그 제조방법 | |
KR20090095315A (ko) | 산화물 반도체 박막 트랜지스터의 소스 및 드레인 전극용에칭액 및 이를 이용한 산화물 반도체 박막 트랜지스터의제조방법 | |
JP2004273699A (ja) | 薄膜トランジスタの製造方法 |