TWI372262B - Optical projection system, exposuring device, and exposuring method - Google Patents

Optical projection system, exposuring device, and exposuring method

Info

Publication number
TWI372262B
TWI372262B TW094120735A TW94120735A TWI372262B TW I372262 B TWI372262 B TW I372262B TW 094120735 A TW094120735 A TW 094120735A TW 94120735 A TW94120735 A TW 94120735A TW I372262 B TWI372262 B TW I372262B
Authority
TW
Taiwan
Prior art keywords
aperture
exposuring
numerical aperture
point
optical system
Prior art date
Application number
TW094120735A
Other languages
English (en)
Other versions
TW200604566A (en
Inventor
Hideki Komatsuda
Tomowaki Takahashi
Masayuki Suzuki
Original Assignee
Nikon Corp
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Canon Kk filed Critical Nikon Corp
Publication of TW200604566A publication Critical patent/TW200604566A/zh
Application granted granted Critical
Publication of TWI372262B publication Critical patent/TWI372262B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Push-Button Switches (AREA)
  • Photographic Developing Apparatuses (AREA)
  • Liquid Crystal (AREA)
TW094120735A 2004-06-23 2005-06-22 Optical projection system, exposuring device, and exposuring method TWI372262B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004184657 2004-06-23

Publications (2)

Publication Number Publication Date
TW200604566A TW200604566A (en) 2006-02-01
TWI372262B true TWI372262B (en) 2012-09-11

Family

ID=35781757

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120735A TWI372262B (en) 2004-06-23 2005-06-22 Optical projection system, exposuring device, and exposuring method

Country Status (9)

Country Link
EP (1) EP1768172B1 (zh)
JP (1) JP4711437B2 (zh)
KR (1) KR100918335B1 (zh)
CN (1) CN1954406B (zh)
AT (1) ATE457522T1 (zh)
DE (1) DE602005019302D1 (zh)
HK (1) HK1105146A1 (zh)
TW (1) TWI372262B (zh)
WO (1) WO2006001291A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101176686B1 (ko) * 2005-03-08 2012-08-23 칼 짜이스 에스엠티 게엠베하 접근 용이한 조리개 또는 구경 조리개를 구비한마이크로리소그래피 투영 시스템
WO2007094198A1 (ja) * 2006-02-16 2007-08-23 Nikon Corporation 投影光学系、露光装置、露光方法、ディスプレイの製造方法、マスク及びマスクの製造方法
US8208127B2 (en) 2007-07-16 2012-06-26 Carl Zeiss Smt Gmbh Combination stop for catoptric projection arrangement
KR101614562B1 (ko) * 2008-07-31 2016-05-02 코닝 인코포레이티드 스팟이 조정되는 능동형 스팟 어레이 리소그래픽 프로젝터 시스템
WO2011095209A1 (de) * 2010-02-03 2011-08-11 Carl Zeiss Smt Gmbh Mikrolithographische projektionsbelichtungsanlage
KR101505256B1 (ko) 2010-04-23 2015-03-30 칼 짜이스 에스엠티 게엠베하 리소그래픽 시스템의 광학 소자의 조작을 포함하는 리소그래픽 시스템의 작동 방법
WO2012137699A1 (ja) * 2011-04-05 2012-10-11 株式会社ニコン 光学装置、露光装置、およびデバイス製造方法
DE102014208770A1 (de) * 2013-07-29 2015-01-29 Carl Zeiss Smt Gmbh Projektionsoptik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik
DE102014223811B4 (de) 2014-11-21 2016-09-29 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
SG88824A1 (en) * 1996-11-28 2002-05-21 Nikon Corp Projection exposure method
JP2001110709A (ja) * 1999-10-08 2001-04-20 Nikon Corp 多層膜反射鏡及び露光装置ならびに集積回路の製造方法。
EP1093021A3 (en) * 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
JP3720788B2 (ja) * 2002-04-15 2005-11-30 キヤノン株式会社 投影露光装置及びデバイス製造方法
JP2004158786A (ja) * 2002-11-08 2004-06-03 Canon Inc 投影光学系及び露光装置
CN100399063C (zh) * 2002-11-21 2008-07-02 卡尔蔡司Smt股份有限公司 带非圆形光阑的微印刷用投影镜头

Also Published As

Publication number Publication date
TW200604566A (en) 2006-02-01
JP4711437B2 (ja) 2011-06-29
EP1768172B1 (en) 2010-02-10
CN1954406B (zh) 2011-07-06
EP1768172A1 (en) 2007-03-28
HK1105146A1 (en) 2008-02-01
JPWO2006001291A1 (ja) 2008-04-17
CN1954406A (zh) 2007-04-25
WO2006001291A1 (ja) 2006-01-05
KR20070043979A (ko) 2007-04-26
KR100918335B1 (ko) 2009-09-22
EP1768172A4 (en) 2008-03-05
DE602005019302D1 (de) 2010-03-25
ATE457522T1 (de) 2010-02-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees