TWI366253B - Method and device for heat dissipation in semiconductor modules - Google Patents

Method and device for heat dissipation in semiconductor modules

Info

Publication number
TWI366253B
TWI366253B TW095100484A TW95100484A TWI366253B TW I366253 B TWI366253 B TW I366253B TW 095100484 A TW095100484 A TW 095100484A TW 95100484 A TW95100484 A TW 95100484A TW I366253 B TWI366253 B TW I366253B
Authority
TW
Taiwan
Prior art keywords
heat dissipation
semiconductor modules
modules
semiconductor
dissipation
Prior art date
Application number
TW095100484A
Other languages
English (en)
Other versions
TW200631136A (en
Inventor
H Bernhard Pogge
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200631136A publication Critical patent/TW200631136A/zh
Application granted granted Critical
Publication of TWI366253B publication Critical patent/TWI366253B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
TW095100484A 2005-01-14 2006-01-05 Method and device for heat dissipation in semiconductor modules TWI366253B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/905,643 US7049695B1 (en) 2005-01-14 2005-01-14 Method and device for heat dissipation in semiconductor modules

Publications (2)

Publication Number Publication Date
TW200631136A TW200631136A (en) 2006-09-01
TWI366253B true TWI366253B (en) 2012-06-11

Family

ID=36423818

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100484A TWI366253B (en) 2005-01-14 2006-01-05 Method and device for heat dissipation in semiconductor modules

Country Status (4)

Country Link
US (1) US7049695B1 (zh)
JP (1) JP4823676B2 (zh)
CN (1) CN100433313C (zh)
TW (1) TWI366253B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7816231B2 (en) * 2006-08-29 2010-10-19 International Business Machines Corporation Device structures including backside contacts, and methods for forming same
US7377811B2 (en) * 2006-08-29 2008-05-27 International Business Machines Corporation Method and apparatus for associating a cable with an electronic device and improving electromagnetic compatability shielding between the cable and the electronic device
US7687923B2 (en) * 2007-08-08 2010-03-30 Advanced Chip Engineering Technology Inc. Semiconductor device package having a back side protective scheme
CN102243668A (zh) * 2010-05-12 2011-11-16 北京师范大学 可热扩展的三维并行散热集成方法:用于大规模并行计算的片上***关键技术
CN104201157B (zh) * 2014-08-08 2017-12-19 武汉新芯集成电路制造有限公司 混合键合工艺中的半导体散热结构和方法
CN104241202B (zh) * 2014-08-28 2017-05-31 武汉新芯集成电路制造有限公司 一种集成功率器件与控制器件的工艺
CN104409421B (zh) * 2014-11-05 2017-05-31 武汉新芯集成电路制造有限公司 一种垂直型沟道存储器件和控制器件的集成工艺
JP6903051B2 (ja) * 2015-10-07 2021-07-14 セラムテック ゲゼルシャフト ミット ベシュレンクテル ハフツングＣｅｒａｍＴｅｃ ＧｍｂＨ 二面冷却式回路
JP6686499B2 (ja) * 2016-02-12 2020-04-22 株式会社村田製作所 半導体集積回路素子の放熱構造、ならびに、半導体集積回路素子及びその製造方法
CN110060961B (zh) * 2018-01-19 2021-07-09 华为技术有限公司 一种晶圆封装器件
CN110838475A (zh) * 2018-08-17 2020-02-25 深南电路股份有限公司 芯片组件及其制作方法
KR20200140654A (ko) 2019-06-07 2020-12-16 삼성전자주식회사 반도체 패키지 및 그 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03171744A (ja) * 1989-11-30 1991-07-25 Toshiba Corp 半導体装置及びその製造方法
JPH03209751A (ja) * 1990-01-11 1991-09-12 Fujitsu Ltd 半導体装置の冷却方法および構造
JPH10107190A (ja) * 1996-10-01 1998-04-24 Tonen Corp 半導体パッケージ
JP2000223627A (ja) * 1999-01-29 2000-08-11 Nec Corp フリップチップパッケージ
US6110806A (en) * 1999-03-26 2000-08-29 International Business Machines Corporation Process for precision alignment of chips for mounting on a substrate
TW579555B (en) * 2000-03-13 2004-03-11 Ibm Semiconductor chip package and packaging of integrated circuit chip in electronic apparatus
JP2002009194A (ja) * 2000-06-26 2002-01-11 Kyocera Corp 半導体素子搭載用基板
US6477054B1 (en) * 2000-08-10 2002-11-05 Tektronix, Inc. Low temperature co-fired ceramic substrate structure having a capacitor and thermally conductive via
US6444560B1 (en) * 2000-09-26 2002-09-03 International Business Machines Corporation Process for making fine pitch connections between devices and structure made by the process
JP2003021477A (ja) * 2001-07-10 2003-01-24 Toshiba Corp 熱交換器およびその製造方法
JP2003156774A (ja) * 2001-11-20 2003-05-30 Matsushita Electric Ind Co Ltd 短波長レーザー光源
JP3813540B2 (ja) * 2002-05-28 2006-08-23 富士通株式会社 半導体装置の製造方法及び半導体装置及び半導体装置ユニット
US7067903B2 (en) * 2002-11-07 2006-06-27 Kabushiki Kaisha Kobe Seiko Sho Heat spreader and semiconductor device and package using the same
JP3934565B2 (ja) * 2003-02-21 2007-06-20 富士通株式会社 半導体装置

Also Published As

Publication number Publication date
JP2006196885A (ja) 2006-07-27
CN1828876A (zh) 2006-09-06
TW200631136A (en) 2006-09-01
CN100433313C (zh) 2008-11-12
US7049695B1 (en) 2006-05-23
JP4823676B2 (ja) 2011-11-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees