TWI364779B - Method and apparatus for photomask plasma etching - Google Patents
Method and apparatus for photomask plasma etching Download PDFInfo
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- TWI364779B TWI364779B TW094110929A TW94110929A TWI364779B TW I364779 B TWI364779 B TW I364779B TW 094110929 A TW094110929 A TW 094110929A TW 94110929 A TW94110929 A TW 94110929A TW I364779 B TWI364779 B TW I364779B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
- H01J2237/0225—Detecting or monitoring foreign particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3151—Etching
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
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- Epidemiology (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- ing And Chemical Polishing (AREA)
Description
1364779 第 f/彳”小7號翊案卿t月修正
1¾¾邊^痛.:龜德先,:.座:乂讀^'. 【發明所屬之技術領域】 本發明實施例大想上係有關於電漿蝕刻光罩的方法及 設備,更特定地,係有關於使用一半遠端(quasi_rem〇te) 電漿來蝕刻光罩的方法及設備。 【先前技術】 在積體電路(IC)或晶片的製造中,晶片設計者會創造 出可代表晶片〇同層的圖樣…系列的罩幕s戈光罩會從 這一圖樣中被I生出來用以在製處理期間將每—晶片層的 設計轉移到一半導想基材上。罩幕圖樣產生系統使用精密 的雷射或電子束來將該晶片的每_層的設計成像至各自的 這二罩幕然後就像照片的底片般地被使用,將每 一層的電路圓樣轉移到-半導體基材上。4些層藉由使用 】的處理而被堆累及轉變為構成每一完整晶片的微小 電晶體及電子電路。因Λ,在罩幕上的任何缺陷都將會被 轉移到晶片上,而對a + B曰片的性能造成不利的影響。太嚴重 的缺陷會讓該罩幕完全無法使用。典型地,一組包含15 個至30個的罩幕會址 破用來建構一晶片且可被重復地使用。 該罩幕典型地為一 一 破墦或一石央基材,在其一側上有 層鉻。該罩幕亦可句人 _)。該鉻層被覆蓋層氣化秒⑻Ν)其被換雜钥 ^ . 几反射塗層及一感光阻劑。在一形 成圖樣的處理中,藉由 該感光阻劑的一部分曝露在紫外 線下,讓經過曝照的部八 77可溶解到一顯影溶液中而使電路 3 1364779 曰修(更)正本 設計寫到該罩幕上。該抗腐蝕劑之可溶解的部分然後被去 除掉,讓底下之鉻的待蝕刻部分露出來。蝕刻處理將位在 抗姓刻劑被除掉的位置處的鉻及抗反射層從該罩幕上去除 掉’即去除露出來的鉻。
在一被稱為乾式姓刻,反應離子钱刻,或電聚钱刻的 钱刻處理中,一電漿被用來加強在該罩幕之外露區域上的 化學反應,藉以將目標層去除掉。令人不滿意地,該蝕刻 處理並沒有產生該電路設計圖樣之一完美的複製品於該罩 幕上。因為用於鉻蝕刻的光阻的輪廓以及罩幕材質的選擇 性的關係’該圖樣的部分收縮會發生在該經過蝕刻的罩幕 上。此收縮被稱為银刻偏移(etch bias) 此外,該钱刻偏 移在整個罩幕上可能不是均一的。此現象被稱為關鍵尺度 均一性或CDU。在傳統的罩幕蝕刻處理中,該蝕刻偏移典 型地是在約60至70奈米(nm)的範圍内且該CDU是在約 10至15nm的範圍内》對於65nm大小的特徵結構的容限 (tolerance)而言,其蝕刻偏移約20nm及關鍵尺度均一性約 5nm °因此,當形成在該晶片上之特徵結構的節點尺寸持 續縮小時’既有製程的能力將會變得愈來愈不敷所需,特 別是在節點尺寸接近65nm的大小時。 因此’對於一種用於製造光罩之改良的蝕刻處理存在 著需求。 【發明内容】 本發明大體上提供一種用於蝕刻光罩的方法及設備β 1364779 ?7年修(更)正本 在一實施例令,一種蝕刻一光罩的方法包括提供一處理 室’其具有一基材支撐座用來接收位於其上之一光罩基材 (在此技藝中其被稱為光罩幕或光罩)。一離子-自由基屏蔽 • 件被提供在該座上方。一基材被放置在該座上位在該離子_ •自由基屏蔽件底下。一處理氣體被引入到該處理室内且從 該處理氣體中形成一電漿。該基材主要係被穿過該屏蔽件 的自由基所蝕刻》 在本發明的另一態樣中,一種設備被提供來蝕刻一光 ® 罩基材。在一實施例中,一處理室具有一基材支撐座於其 内。該座適以支撐一光罩基材。一 RF電源被耦合至該處 理室用以在該處理室內形成—電漿。一離子_自由基屏蔽件 被設置在該處理室内位於該座上方。該屏蔽件係適用於控 制該電漿之帶電物質及電中性物質的空間分布。該屏蔽件 包括一爲平件其與室壁彼此為電性隔絕並包含複數個孔, 其垂直地延伸穿過該扁平件。
【實施方式】 本發明提供用來改良微影成像光罩幕或光罩的方法及 設備。該設備包括一離子-自由基屏蔽件其被設置在—電聚 處理室内》該離子·自由基屏蔽件在處理期間控制在該室内 之電物質與電中性物質的空間分布。該離子自由基屏蔽件 被設置在該電聚與該光罩之Ρβ1,使得電毁以—半遠端的方 式被形成在該處理室之位在該屏蔽件上方的上處理區内。 在-實施例卜該離子·自丨基屏蔽件包含_陶篆板其 5 1364779 年乙月f日射更)正木
有一或多個穿孔形成於其上》該板被設置在該室内位在座 上方的位置。該板與該室的室壁及該座彼此為電性隔絕’ 使得在該板與地極之間沒有接地路徑。在處理期間’因為 來自電漿之電子轟擊結果而在該板表面上逐漸形成一電 位。該電位吸引來自電漿的離子,有效地將它們從電漿中 過濾出來,同時讓電中性的自由基可通過該板上的孔。因 此’離子-自由基屏蔽件可防止離子到達待蝕刻的光罩表 面’同時又可以一更受控制的方式讓自由基與光罩起反應 並蝕刻光罩,藉以減少該光罩阻劑的腐蝕以及降低該阻劑 喷濺到該被形成圖樣的鉻的側壁上。降低蝕刻及喷濺可改 善蝕刻偏移及關鍵尺度的均一性。
第1圖顯示一具有一離子-自由基屏蔽件170之蝕刻反 應器100的示意圖。可使揭示於本文中之教導一起使用之 適合的反應器包括,例如,由設在美國加州Santa Clara 市的 Applied Materials 公司所製造的 Decoupled Plasma Source (DPS®)II反應器,或Tetra I及Tetra II光罩钱刻系 統。該DPS® II反廨器亦可被用作為一同樣是由App丨ied Materials公司所製造的Centura®g合的半導體晶圓處理 系統的一處理模組。示於本文中之反應器1〇〇的此一特定 的實施例只是作為舉例的目的其不應被用來限制本發明的 範圍。 該反應器100大體上包含一處理室1〇2其具有一位在 -導電本體(壁)1〇4内的基材座124,及—控制器146。該 室102具有_扁平的介電質天花板1〇8。該室} 〇2的其它 6 平ι月修(更)正本 變化可具有其它種類的天花板,如一圓頂形的天花板。一 天線110被設置在該天花板108上方。該天線11〇包含一 或多個感應線圈元件,該些感應線圈元件可被選擇性地控 制(兩個同軸元件110a及110b被示於第1圖中。天線no 經由第一配接電路114被耦合至電漿電源112。該電衆電 源112典整地可在約50kHz至約13.56MHz之可調的頻率 範圍内產生高達约3000W的功率。 該基材座(陰極)124經由第二配接網絡丨42被耦合至 —偏壓電源140。該偏壓電源14〇大致上為一可在約 1 3.56MHz的頻率下產生約5〇〇 w的電源,其為能夠產生連 續的或脈衝式功率的電源。或者,該電源14〇可以是一 DC 或脈衝式DC的電源。 在一實施例中,該基材支撐座124包含一靜電夾盤 160。該靜電夾盤16〇包含至少一夾持電極132且是由一夾 盤電源1 66來控制。在其它實施例中,基材座1 24可包含 基材固持機構’像是-載件(suseeptor)失環,-機械式夾 盤,及類此者。 _光罩轉接器182被用來將基材(光罩)122固定到該 基材支撐座124上。該光罩轉接器182大艎上包括下部184 其被磨製用以覆蓋該座124的上表面(例如,該靜電夾盤 16〇)及一上部186其具有一開口 188,該開口被作成可固 持該基材1 22的大小及形狀。開口 1 8 8是被開設在相對於 該座124的中央位置處。轉接器182大體上是由一單件的 耐蝕刻及耐尚溫材質製成,像是聚醯胺陶瓷或石英。一適 1364779 __ 9f年'Μ 乂日修(更)正本 合的光罩轉接器被揭示在20 01年6月26曰發出之美國專 利第6,25 1,21 7號中,該專利案的内容藉由此參照而被併 於本文中。一邊缘環126會覆蓋該轉接器182及/或將該接 器182固定到該座124上。
一舉升機構138無用來降低或升高該轉接器182,及 將基材122放到該基材支撐座124上或抬離該基材支撐座 124。大致上,舉升機構138包含複數個舉升銷130(圖上 顯示一個舉升銷)’該些舉升銷130係可行進穿過各自的導 引扎》 在運作時’基材122的溫度是藉由將基材支撐座124 予以穩定化來控制。在一實施例中,該基材支撐座1 24包 含一電阻式加熱器144及一散熱器128。該電阻式加熱器 144大體上包含至少一加熱元件134且由一加熱器電源供 應器168來管理。來自該氣體源156之背側氣體(如,氦氣 (He))經由一氣體導管158而被提供至位於形成在該基材 底下之該座表面内的通道中。該背側氣體被用來促進該座 124與該基材122之間的熱交換。在處理期間,座124可 被埋設的電阻式加熱器1 44加熱至一穩態溫度,其與該氦 氣的背側氣體一起共同促進該基材122的均勻加熱。使用 此種熱控制,該基材可被保持在一介於約〇°C至約350 °C之 間的溫度》 一離子-自由基屏蔽件170被設置在該室1〇2内之在該 座124的上方處。該離子-自由基屏蔽件17〇與該室壁1〇4 及座124間為電性隔絕且包含一扁平的板172及複數隻腳 8 今产ι月"^修(更)正本 1 - — ^__L·, 176。板172被腳176支撐在該室1〇2内位在該座的上方 處。板172昇有一或多個開口(孔)174其在該板172的表 面上界定出一所想要的開孔區。該離子-自由基屏蔽件17〇 的開孔區控制著從形成在該處理室1 02的一上處理空間 178内的電漿通過到位在該離子-自由基屏蔽件170與該基 材122之間的下處理空間180的離子數量。該開孔區愈大, 可通過該離子-自由基屏蔽件 170的離子數量就愈多。因 此,孔1 7 4的大小控制著在處理空間1 8 〇中的離子密度。 因此,該離子-自由基屏蔽件170為一離子過滤器。 第2圖顯示該離子-自由基屏蔽件17〇的一特定實施例 的立體圖。在此實施例中’該離子-自由基屏蔽件17〇包含 一板丨72其具有複數個孔174及複數隻腳176。板172是 用陶瓷(如氧化鋁),石英,陽極化鋁,或其它可與處理化 學相容的物質製成。在另一實施例中,該板172可包含一 網篩(screen)或網狀物(mesh),其中該網薛或該網狀物的開 孔區域係對應於孔1 74所提供之所想要的開孔區。或者’ 一種板子與網篩或網狀物的組合亦可被使用。 該等複數個孔I74在該板172的表面上的大小’間距’ 及形狀係可被改變。孔1 74的大小大致上其範圍是在〇 〇3 英吋(0.07公分)至約3英忖(7.62公分)之間。孔174可被 安排來界定一開孔區’其佔該板1 7 2的表面的比例從約2 0/〇 至約90%。在一實施例中,該一或多個孔174包括複數個 直徑約半英吋(1.25公分)的孔洞,其被安排成一方形的格 子圖樣且界定出一約3 0 /〇的開孔區。該等孔動可安排成其 1364779 行年匕月^"日修(更)正本丨 它幾何或隨機圖樣’其形狀使用其它尺寸的孔或不同尺寸 的孔。該等孔满的尺寸’形狀及圓樣可隨著在該下處理空 間1 8 0中所想要之離子密度而被改變。例如,多個小直徑 的孔洞可被用來增加在該處理空間180中之自由基/離子 密度的比例。在其它情況下,數個大孔洞可點綴地散置在 小孔洞之間用以提高在該處理空間180中之離子/自由基 的密度。或者’大孔洞可被設在該板172的特定的區域上 用以規畫出在該處理空間180内的離子分布。
該離子-自由基屏蔽件170被支樓的高度可改變用以 進一步控制蝕刻處理。該離子·自由基屏蔽件1 70離天花板 1 0 8愈近,該上處理空間1 7 8就愈小。一小的上處理空間 178可促進電漿更加穩定。在一實施例令,該離子-自由基 屏蔽件170被設置在離該天花板108約1英吋(2.54公分) 的地方。藉由將該離子-自由基屏蔽件170放置在離該座 124較近的地方(即離基材122較近),則可獲得一較快的 蝕刻率。或者,藉由將該離子-自由基屏蔽件170放置在離
該座124較遠的地方,則可獲得一較慢但較可受控制的蝕 刻率。因此,藉由調整該離子-自由基屏蔽件丨70的高度來 控制餘刻率可以在較快的蝕刻率與改善的關鍵尺度均一性 ,減小的蝕刻偏移之間取得平衡。在一實施例中,該離子^ 自由基@ μ 蔽件170被設置在離該座124約2英吋(5公分1 的位置虚丄 ) 板1〇8 。在—具有6英吋(15‘24公分)的基材122與天花 17〇 , ^間的距離之處理室1〇2内,該離子_自由基屏蔽件 S '範圍在約1.5英时(3.81公分)至約4英付(10.16 10 公分)之間。該離子-自由基屏蔽件170可位在具有不同的 幾何形狀,例如更大或更小的處理室中的不同高度處。 為了要將板 1 72保持在一與基材 1 22間隔開來的關 係,板172被設置在該座124上的複數隻腳176支撐住。 該等腳176大致上係位在該座124或邊緣環126的外週邊 處,且是用與板172同樣的材質來製成。在一實施例中, 三隻腳176被用來提供該離子-自由基屏蔽件170 —穩定的 支撐。腳176大體上將該板子保持在一與基材122或座124 平行的狀態。然而,藉由讓該等腳176有不同的長度,亦 可將該板子保持在一與座成一角度的狀態。 該等腳176的一上端可被壓嵌入到該板172上的一對 應孔内。或者,該等腳176的一上端可被旋入到板172内 或旋入到一固定在該板172的底側上的一托架内》其它不 會與處理條件相衝突之傳統的固定件亦可被用來將腳 176 固定到板172上。 腳176可置放在該座124,轉接器182,或邊緣環126 上。或者,腳176可延伸進入到在該座124,轉接器182, 或邊緣環126上的接收孔(未示出)中。其它的固定方法亦 可被用來將該離子-自由基屏蔽件170固定到該座124,轉 接器1 8 2,或邊緣環12 6上,例如,藉由螺絲,鉚釘及類 此者。當被固定到邊緣環126上時,該離子-自由基屏蔽件 170可以是一易於更換的處理套件的一部分,以便於使 用,維修,更換及類此者。該離子-自由基屏蔽件170可被 建構成能夠被輕易地改裝而適用到既有的處理室上。
1364779 或者,該離子-自由基屏蔽件170可被其它的機構支撐 在該座124的上方,像是藉由使用一接附在該室壁1〇4或 在該處理室102内的其它結構上的托架(未示出當板172 被接附在該室壁104或在該處理室102内的其它結構上的 托架時’板172會與其它的接地路徑,像是地極ι〇6,隔 離開來。 再次參照第1圖,一或多種處理氣體從—氣體面板12〇 被提供到該處理室102。該等處理氣體典型地係經由一或 ^ 多個位在該基材座124上方之入口 116(如,開孔,注入器, 及類此者)而被供應。在第1圖所示的實施例中,處理氣體 係使用一環形氣體通道118被提供到入口 116β氣體通道 118可被形成在壁1〇4内或形成在耦合到壁1〇4的氣體環 (如圖所示)内。在一钱刻處理期間,藉由將來自電漿源U2 的功率施加到天線11〇來將處理氣體激勵成為一電漿。 在處理室1 02内的壓力係使用一節流閥i 62及一真空 幫浦164來控制的。壁丨〇4的溫度可使用繞經壁丨〇4之裝 φ 有液趙的導管(未示出)來控制。典型地,室壁104是由金 屬(如,鋁,不銹鋼及類此者)製成的且被耦合到一電性地 。 極1 06。該處理室1 〇2亦包含傳統用於處理控制’内部診 斷,終點偵測及類此者的系統。這些系統被概括地標示為 支援系統1 5 4。 控制器146包含一中央處理單元(Cpu) 150 , —記憶體 148’及CPU 150的支援電路152,且促進該處理室1〇2的 構件的控制,如蚀刻處理的控制,這將在下文中詳細說明。 12 1364779 修(更)正本 控制器146可以是可被使用在一用來 设制不同室之工業裝 置中之一般用途電腦處理器或副處理装 、 35的任何一種形式。 該CPU150之記憶體,或電腦可讀 取的媒體可以是一或多 個可以很容易取得之記憶體,如隨 一 -&碰 機存取記憶體(RAM), 唯讀記憶體(ROM),軟碟片,硬碟播 、何’或其它形式的數位 儲存裝置’本地的或遠端的。支接 入钱電路丨52被耦合至 CPU150’以傳統的方式來支援該處 比抽# 器。這些電路包括快
取記憶體,電源供應,時脈電路,輪 ^ ^ ^ 掏入/輪出電路及子系統, 及類此者。本發明的方法以軟趙程或从 ^ 1/10 . 式的形式被儲存在記憶 體148中。或者,此軟體程式亦 J被儲存及/或被一第二 cpu(未示出)執行,該第二CPu # 1立在該硬體的遠端且受 CPU150所控制。
本發明之使用該離子-自由基屏蔽件no來钱刻一光 罩基材的示範性方法3GG被示於第3圖的流程时且係參 照第!圖來說明。方法300自㈣3〇2開始,即基材122 被放在一基材支撐座124上且在一處理室1〇2内的一離子_ 自由基屏蔽件170底下β該離子_自由基屏蔽件17〇被放在 該座124上方約2英吋(5公分)處。基材122躺在該轉接 器182的開孔188内》典型地,基材122大體包含一光學 透明的矽基物質,如石英(即,二氧化矽,si〇2),其具有 一設置在該石英的表面上之不透明的金屬遮光層,其通稱 為一光罩物質。用作為光罩物質的金屬典型地包括鉻或氮 氧化鉻。基材122亦可包括一摻雜了鉬(M〇)之氮化矽層’ 其被放在石英與鉻之間。 13 1364779 修(更)正本丨
在步驟3 04,一或多種處理氣體經由氣體入口 116被 引入到處理室102中。示範性的處理氣體包括氧氣(〇2)或 含氧氣體,如一氧化碳(CO),及/或含鹵素的氣體,如用來 蝕刻金屬層之含氯氣醴。處理氡體可進一步包括鈍氣或其 匕含氧氣體。一氧化碳被有利地用來形成鈍態聚合物沉積 物於表面上’特別是在開孔的側壁上以及在形成於一圖樣 化的阻劑物質及被蝕刻的金屬層内的圖樣上。含氣氣體是 從由氣氣(C12),四氣化矽(SiCl4),三氣化硼(BC13)及它們 的混合物所構成的組群中選取的,且被用來供應高度反應 性的自由基來蝕刻金屬層。
在一實施例中,在提供10至1 000sccm流率的氣及〇 至lOOOsccm流率的氧之下,使用該Tetra ϊ, Tetra II,或 DPS® II蝕刻模組來蝕刻該包含鉻的基材ι22β 一介於5至 500W的基材偏壓功率被施加至該靜電夹盤16〇上且該基 材122被保持在小於約150 °C的溫度範圍内。在處理室内 的壓力被控制在約1 mTorr至約1 OmTorr的範圍内。一特定 的處理配方提供80sccm流率的氣及20sccm流率下氧,施 加15W的偏壓功率,及保持2mTorr的壓力。該處理提供 至少1 :1之鉻對光阻的蝕刻選擇性。
在步驟306,一電漿從該一或多種處理氣體被形成, 而用通過該離子-自由基屏蔽件170的自由基來蝕刻基材 122。該電漿大體上係藉由從該電漿電源Π2施加介於約 2 00至約20 00W的RF功率至天線110而被形成在上處理 空間178中。在一實施例中,功率水平在約35〇w的RF 14 1364779 作<曰修(更)正本< 功率疋在13.56MHz的頻率下被施加到天線no上。
备RF功率在步驟3〇6被施加時,一電漿被形成且電 子會爲擊該板子用以形成一電位於該離子-自由基屏蔽件 170的表面上。該電位吸引存在該電漿中的離子並限制通 過孔174進入到下處理空間18〇中的離子數。在該電漿中 之電中性的自由基通過在離子-自由基屏蔽件17〇上的孔 174進入到下處理空間18〇。因此,基材122主要是由電漿 所形成的自由基所蝕刻,同時撞擊到該基材122的離子數 量亦受到控制。撞擊到基材112的離子的減少可降低蝕刻 偏移且可改善基材122的關鍵尺度的均一性。詳言之,在 使用前述的處理蝕刻基材之後所測得的測量值透露出該蝕 刻偏移被減小至1 〇nm且良好的垂直外形在鉻側壁上被觀 察到》詳言之,側壁被觀察出具有一不大於89度的角度。 一沒有緩和部或腳部之陡峭的外形在被蝕刻區的底部與側 壁之間的界面處被觀察到。此外,該關鍵尺度均一性被改 善到小於5 n m。
雖然以上所述係有關於本發明的實施例,但本發明之 其它及進一步的實施例可在沒有偏離本發明的基本範圍下 被疋成,而本發明的範圍是由下面的申請專利範圍來界定 的。 【圖式簡單說明】 本發明之一更為特定的描述可藉由參照顯示於附圖中 之實施例而被作成,使得本發明之上述特徵,優點及目地 15 1364779 ?7年1月^修(更)正本- 可被詳細地瞭解。然而,應注意的是,附圖中所示者為本 發明之典型的實施例,因此不應被認為是本發明範圍的限 制,因為本發明可以有其它等效的實施例。 第1圖為一具有一離子-自由基屏蔽件蝕刻反應器的 不意圖, 第2圖為第1圖中之離子-自由基屏蔽件的實施例的一 部分立體圖;及 第3圖為蝕刻一光罩的方法的流程圖。
【主要元件符號說明】 100 反 應 器 102 處 理 室 104 室 壁 106 地 極 108 天 花 板 110 天 線 110a,110b 元件 112 電 漿 電 源 114 配 接 網絡 116 入 D 118 下 氣 體管 120 氣 體 面 板 122 基 材 124 基 材 支 撐座 126 邊 緣 環 128 散 熱 器 130 舉 升 銷 132 夾 持 電 極 134 加 熱 元件 136 導 引 孔 138 舉 升 機構 140 偏 壓 電 源 142 配 接 網絡 144 加 熱 器 146 控 制 器 148 記 憶 體 150 CPU 152 支 援 電 路
16 1364779 年ι月1^修(更)正本
154 支援 系 统 156 氦 氣 源 158 氣體 導 管 160 夾 盤 162 節流 閥 164 真 空 幫 浦 166 夾盤 電 源 168 加 熱 器 電 源 170 電漿 穩 定 器 172 板 174 孔洞 176 銷 178 上處 理 空 間 180 下 處 理 空 間 182 轉接 器 184 下 部 186 上部 188 開 孔 17
Claims (1)
1364779 ^修止1 W年广玥己,、芯士 j '// 第卻丨號專利案? f年丨厶月修正^一― /- .*、.‘!·- ·*--.-.**·* ί ., .. .... ί . ν' ' .·. 蘇’-铲請專利範:廚 1. 一種用於電漿蝕刻的設備,其至少包含: 一電感耦合電漿處理室; 一基材支撐座,其設置在該處理室中且適以接收一光 罩於其上; 一線圈,其設置在鄰近該處理室處,用以將功率電感 耦合到一形成在該處理室内的電漿;
一 RF電源,其耦接到該線圈,用來形成該電漿於該 處理室内; 一離子-自由基屏蔽件,其設置在該處理室内位在該基 材支撐座上方處且適以控制該電漿之帶電荷物質與電中性 物質的空間分布,其中該離子-自由基屏蔽件包含陽極化的 鋁,以及其中複數隻支撐腳用來將該離子-自由基屏蔽件支 撐於該座上方1. 5英吋(3 · 8 1公分)至4英吋(1 0 · 1 6公分)的 距離;及
一邊緣環,其係繞著該支撐座上表面的周邊而設置且 具有該複數隻支撐腳自其延伸。 2.如申請專利範圍第1項所述之設備,其中該RF電 源係電感耦合到該處理室。 3.如申請專利範圍第1項所述之設備,其中該離子-自由基屏蔽件更包含複數個孔洞穿過其中,該等孔洞的直 18 1364779 徑為1.2 5公分。 4.如申請專利範圍第1項所述之設備,其中該屏蔽件 被設置在該基材支撐座上方5公分處。 5.如申請專利範圍第1項所述之設備,其中該屏蔽件 更包含:
一實質扁平件,其係與該處理室彼此為電性隔絕;及 複數個孔洞。 6 ·如申請專利範圍第5項所述之設備,其中該扁平件 更包含: 一板,其具有複數個孔洞形成貫穿其中。
7.如申請專利範圍第6項所述之設備,其中位在該板 表面上該等孔洞的尺寸、形狀、位置及分布,係可在接近 該基材處界定出一離子與自由基密度的比例。 8.如申請專利範圍第1項所述之設備,其中該等腳係 相對於該座以實質平行且空間相距一定間隔的方式來支撐 該板。 9. 一種用於電漿蝕刻的設備,其至少包含: 19 1364779 修正 補充 一處理室; 一基材支撐座,其設置在該處理室中且適以接受一光 罩於其上; 一 RF電源,用來形成一電漿於該處理室内; 一天線,其設置以將來自該R_F電源之功率電感耦合 到一位在該處理室内的電漿;及
一離子-自由基屏蔽件,其設置在該處理室内位在該基 材支撐座上方處,並且包含複數個適以控制該電漿之帶電 荷物質與電中性物質的空間分布的孔洞;其中該離子-自由 基屏蔽件之面積區域大於該基材支撐座之面積區域,其中 複數隻支撐腳用來將該離子-自由基屏蔽件支撐於該座上 方約1.5英吋(3.8 1公分)至約4英吋(1 0.1 6公分)。 20
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2004
- 2004-06-30 US US10/882,084 patent/US20060000802A1/en not_active Abandoned
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- 2005-04-06 TW TW094110929A patent/TWI364779B/zh not_active IP Right Cessation
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- 2005-04-15 KR KR1020050031466A patent/KR20060045765A/ko not_active Application Discontinuation
- 2005-05-09 EP EP05252818A patent/EP1612840A3/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
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JP2014013899A (ja) | 2014-01-23 |
JP5456639B2 (ja) | 2014-04-02 |
TW200715405A (en) | 2007-04-16 |
KR20060045765A (ko) | 2006-05-17 |
JP2006019719A (ja) | 2006-01-19 |
JP2011071527A (ja) | 2011-04-07 |
EP1612840A3 (en) | 2007-07-25 |
US20060000802A1 (en) | 2006-01-05 |
JP5989608B2 (ja) | 2016-09-07 |
US20140190632A1 (en) | 2014-07-10 |
TWI372426B (en) | 2012-09-11 |
JP4716791B2 (ja) | 2011-07-06 |
TW200601429A (en) | 2006-01-01 |
JP3131039U (ja) | 2007-04-19 |
JP2015201654A (ja) | 2015-11-12 |
US20070017898A1 (en) | 2007-01-25 |
EP1612840A2 (en) | 2006-01-04 |
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