JP5844025B2 - 自己マスク層を有するフォトマスクとそのエッチング方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 91
- 238000005530 etching Methods 0.000 title claims description 68
- 230000008569 process Effects 0.000 claims description 53
- 238000010521 absorption reaction Methods 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 35
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 27
- 229910052715 tantalum Inorganic materials 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 239000006096 absorbing agent Substances 0.000 claims description 12
- 239000000460 chlorine Substances 0.000 claims description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 7
- 229910004535 TaBN Inorganic materials 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 7
- 229910003071 TaON Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical group FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 229910018503 SF6 Inorganic materials 0.000 claims description 2
- SLYSCVGKSGZCPI-UHFFFAOYSA-N [B]=O.[Ta] Chemical compound [B]=O.[Ta] SLYSCVGKSGZCPI-UHFFFAOYSA-N 0.000 claims description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims 3
- 239000002250 absorbent Substances 0.000 claims 2
- 230000002745 absorbent Effects 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
- Y10T428/31616—Next to polyester [e.g., alkyd]
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Description
本発明の実施形態は、概して、半導体デバイスの製造で使用するフォトマスク、更に具体的には自己マスク層を有するフォトマスクとそのエッチング方法に関する。
集積回路(IC)又はチップの製造において、チップの異なる層を表すパターンはチップ設計者によって作成される。製造工程中に各チップ層のパターンを半導体基板上に転写するために、一連の再使用可能なフォトマスク(本願ではマスクとも称される)をこれらのパターンから作製する。マスクパターン形成システムでは精密レーザや電子ビームを用いてチップの各層のデザインをそれぞれのマスク上に像形成する。次に、マスクを写真のネガのように用いて各層の回路パターンを半導体基板上に転写する。一連の処理を用いてこれらの層を積み重ねると、完成した各チップを構成する微小なトランジスタや電気回路となる。そのため、マスクに少しでも欠陥があるとチップに転写され、性能に悪影響を及ぼす可能性がある。性能に悪影響がでるほどに欠陥が深刻となると、マスクは完全に使い物にならなくなる。典型的には、1つのチップを1セット15〜30個のマスクを用いて構築し、これらは繰り返して使用可能である。
Claims (12)
- 透明な基板と、
基板上に配置された不透明な多層型吸収層であり、バルク吸収層上に配置された自己マスク層を備え、自己マスク層が酸化及び窒素化タンタル・ケイ素系材料(TaSiON)、タンタル・ホウ素酸化物系材料(TaBO)、又は酸化及び窒素化タンタル系材料(TaON)の1つを含む多層型吸収層とを備え、バルク吸収層の厚さが多層型吸収層の約80〜85%であり、バルク吸収層がケイ化タンタル系材料(TaSi)、窒素化ホウ化タンタル系材料(TaBN)、又は窒化タンタル系材料(TaN)の1つを含むフォトマスク。 - フォトマスクの厚さが0.15〜0.25インチである請求項1記載のフォトマスク。
- 不透明な多層型吸収層の厚さが40〜100nmである請求項1記載のフォトマスク。
- 自己マスク層が酸化及び窒素化タンタル・ケイ素系材料(TaSiON)を含み、バルク吸収層がケイ化タンタル系材料(TaSi)を含むか、
自己マスク層がタンタル・ホウ素酸化物系材料(TaBO)を含み、バルク吸収層が窒素化ホウ化タンタル系材料(TaBN)を含むか、又は
自己マスク層が酸化及び窒素化タンタル系材料(TaON)を含み、バルク吸収層が窒化タンタル系材料(TaN)を含むかのいずれかである請求項1〜3のいずれか1項記載のフォトマスク。 - 多層型吸収層をその上に有する透明基板を備えるフォトマスクを提供する工程であって、多層型吸収層がバルク吸収層上に配置された自己マスク層を備え、自己マスク層はタンタルと酸素を含み、バルク吸収層はタンタルを含み基本的に酸素を含まない工程と、
第1エッチング処理を用いて自己マスク層をエッチングする工程と、
第1エッチング処理とは異なる第2エッチング処理を用いてバルク吸収層をエッチングする工程を含み、ここでバルク吸収層のエッチング速度が、第2エッチング処理中、自己マスク層のエッチング速度より速く、
バルク吸収層の厚さが多層型吸収層の約80〜85%であり、
自己マスク層が酸化及び窒素化タンタル・ケイ素系材料(TaSiON)、タンタル・ホウ素酸化物系材料(TaBO)、又は酸化及び窒素化タンタル系材料(TaON)の1つを含むか、バルク吸収層がケイ化タンタル系材料(TaSi)、窒素化ホウ化タンタル系材料(TaBN)、又は窒化タンタル系材料(TaN)の1つを含むかのいずれかであるフォトマスクのエッチング方法。 - フォトマスクが多層型吸収層上に配置されたフォトレジスト層を更に備えるブランクフォトマスクであり、自己マスク層は反射防止サブ層であり、バルク吸収層はバルクサブ層であり、前記エッチング方法は、
フォトレジスト層にパターン像を形成する工程と、
パターン像に対応しないフォトレジスト層部位を除去することでパターン像に対応しない反射防止サブ層の部位を露出させる工程を更に含み、
自己マスク層のエッチング工程が、第1エッチング処理を用いてパターン像に対応しない反射防止サブ層の露出部位を除去することでパターン像に対応しないバルクサブ層の部位を露出させることを更に含み、
バルク吸収層のエッチング工程が、バルクサブ層除去速度が反射防止サブ層除去速度の少なくとも10倍である第2エッチング処理を用いて、パターン像に対応しない、反射防止サブ層の下のバルクサブ層の露出部位を除去することでパターン像に対応しない実質的に透明な層の部位を露出させることを更に含み、
前記エッチング方法は、フォトレジスト層を除去する工程を更に含む請求項5記載の方法。 - 自己マスク層が酸化及び窒素化タンタル・ケイ素系材料(TaSiON)を含み、バルク吸収層がケイ化タンタル系材料(TaSi)を含むか、
自己マスク層がタンタル・ホウ素酸化物系材料(TaBO)を含み、バルク吸収層が窒素化ホウ化タンタル系材料(TaBN)を含むか、又は
自己マスク層が酸化及び窒素化タンタル系材料(TaON)を含み、バルク吸収層が窒化タンタル系材料(TaN)を含むかのいずれかである請求項5〜6のいずれか1項記載の方法。 - 第1エッチング処理がフッ素含有ガス、四塩化炭素(CCl4)、又は塩化水素(HCl)の少なくとも1つを含む処理ガスを用いて自己マスク層をエッチングする工程を含む請求項5〜6のいずれか1項記載の方法。
- 第1エッチング処理がトリフルオロメタン(CHF3)、四フッ化炭素(CF4)、六フッ化硫黄(SF6)、六フッ化炭素(C2F6)、四塩化炭素(CCl4)、又は塩化水素(HCl)の少なくとも1つを含む処理ガスを用いて自己マスク層をエッチングする工程を含む請求項5〜6のいずれか1項記載の方法。
- 第2エッチング処理がバルク吸収層を少なくとも1つの塩素含有処理ガスを用いてエッチングする工程を含む請求項5〜6のいずれか1項記載の方法。
- 第2エッチング処理が塩素(Cl2)、四塩化炭素(CCl4)、又は塩化水素(HCl)の少なくとも1つを含む処理ガスを用いてバルク吸収層をエッチングする工程を含む請求項5〜6のいずれか1項記載の方法。
- 第2エッチング処理は自己マスク層に対してバルク吸収層の選択性を少なくとも10で維持する請求項5記載の方法。
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JP4845978B2 (ja) * | 2008-02-27 | 2011-12-28 | Hoya株式会社 | フォトマスクブランクおよびフォトマスク並びにフォトマスクの製造方法 |
JP5581293B2 (ja) * | 2008-02-27 | 2014-08-27 | Hoya株式会社 | フォトマスクブランク及びその製造方法、並びにフォトマスク及びその製造方法 |
KR101020281B1 (ko) * | 2008-06-20 | 2011-03-07 | 주식회사 하이닉스반도체 | 극자외선 리소그라피 마스크의 제조 방법 |
US8233248B1 (en) | 2009-09-16 | 2012-07-31 | Western Digital (Fremont), Llc | Method and system for providing a magnetic recording transducer using a line hard mask |
JP5434825B2 (ja) * | 2010-07-09 | 2014-03-05 | 信越化学工業株式会社 | ドライエッチング方法 |
US8871102B2 (en) | 2011-05-25 | 2014-10-28 | Western Digital (Fremont), Llc | Method and system for fabricating a narrow line structure in a magnetic recording head |
JP6125772B2 (ja) * | 2011-09-28 | 2017-05-10 | Hoya株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
US9034564B1 (en) | 2013-07-26 | 2015-05-19 | Western Digital (Fremont), Llc | Reader fabrication method employing developable bottom anti-reflective coating |
CN104516138B (zh) * | 2013-09-29 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶面板的制作方法 |
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JP6266842B2 (ja) * | 2015-08-31 | 2018-01-24 | Hoya株式会社 | マスクブランク、マスクブランクの製造方法、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
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JPS57161857A (en) * | 1981-03-31 | 1982-10-05 | Dainippon Printing Co Ltd | Photomask blank plate |
JPH0650387B2 (ja) * | 1986-03-31 | 1994-06-29 | アルバツク成膜株式会社 | フオトマスクおよびその製造方法 |
JPH0650388B2 (ja) * | 1986-04-04 | 1994-06-29 | アルバツク成膜株式会社 | フオトマスクおよびその製造方法 |
US5955222A (en) * | 1996-12-03 | 1999-09-21 | International Business Machines Corporation | Method of making a rim-type phase-shift mask and mask manufactured thereby |
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DE10156366B4 (de) | 2001-11-16 | 2007-01-11 | Infineon Technologies Ag | Reflexionsmaske und Verfahren zur Herstellung der Reflexionsmaske |
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US20060060565A9 (en) * | 2002-09-16 | 2006-03-23 | Applied Materials, Inc. | Method of etching metals with high selectivity to hafnium-based dielectric materials |
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JP2006078825A (ja) * | 2004-09-10 | 2006-03-23 | Shin Etsu Chem Co Ltd | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
JP2006085096A (ja) * | 2004-09-17 | 2006-03-30 | Fujitsu Ltd | 露光用マスクとその製造方法 |
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2006
- 2006-09-15 US US11/532,259 patent/US7771894B2/en active Active
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2007
- 2007-08-06 CN CN2007101401409A patent/CN101144974B/zh not_active Expired - Fee Related
- 2007-08-14 KR KR1020070081858A patent/KR100925080B1/ko active IP Right Grant
- 2007-08-30 EP EP20070017020 patent/EP1901119A3/en not_active Withdrawn
- 2007-09-05 TW TW96133112A patent/TWI432886B/zh not_active IP Right Cessation
- 2007-09-14 JP JP2007239726A patent/JP5844025B2/ja active Active
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Publication number | Publication date |
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KR20080025292A (ko) | 2008-03-20 |
US7771894B2 (en) | 2010-08-10 |
TWI432886B (zh) | 2014-04-01 |
JP2008070883A (ja) | 2008-03-27 |
TW200823599A (en) | 2008-06-01 |
US20080070127A1 (en) | 2008-03-20 |
EP1901119A2 (en) | 2008-03-19 |
EP1901119A3 (en) | 2012-06-06 |
KR100925080B1 (ko) | 2009-11-04 |
CN101144974B (zh) | 2011-03-30 |
CN101144974A (zh) | 2008-03-19 |
JP2014194564A (ja) | 2014-10-09 |
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