TWI358731B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number: TWI358731B
Authority: TW; Taiwan
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 2007-06-26

Application number

TW097101011A

Other languages

English (en)

Other versions

TW200901217A (en

Inventor

Kyung-Whan Kim

Ji-Eun Jang

Original Assignee

Hynix Semiconductor Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-06-26

Filing date

2008-01-10

Publication date

2012-02-21

2008-01-10 Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc

2009-01-01 Publication of TW200901217A publication Critical patent/TW200901217A/zh

2012-02-21 Application granted granted Critical

2012-02-21 Publication of TWI358731B publication Critical patent/TWI358731B/zh

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2254—Calibration

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)

TW097101011A 2007-06-26 2008-01-10 Semiconductor memory device TWI358731B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1020070063310A KR100893577B1 (ko)	2007-06-26	2007-06-26	반도체 메모리장치

Publications (2)

Publication Number	Publication Date
TW200901217A TW200901217A (en)	2009-01-01
TWI358731B true TWI358731B (en)	2012-02-21

Family

ID=40160250

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW097101011A TWI358731B (en)	2007-06-26	2008-01-10	Semiconductor memory device

Country Status (3)

Country	Link
US (1)	US7706196B2 (zh)
KR (1)	KR100893577B1 (zh)
TW (1)	TWI358731B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100868251B1 (ko) *	2007-03-22	2008-11-12	주식회사 하이닉스반도체	반도체 메모리장치
KR101068571B1 (ko) *	2009-07-03	2011-09-30	주식회사 하이닉스반도체	반도체 메모리 장치
KR101062776B1 (ko) *	2010-01-29	2011-09-06	주식회사 하이닉스반도체	반도체 메모리 장치
US8222916B2 (en)	2010-11-17	2012-07-17	Aeroflex Colorado Springs Inc.	Single event transient direct measurement methodology and circuit
JP5920318B2 (ja) *	2013-11-15	2016-05-18	日本電気株式会社	ストレージシステム、ストレージ制御装置、情報処理装置、ストレージ制御プログラムおよびストレージ制御方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2718118B2 (ja)	1988-12-13	1998-02-25	ソニー株式会社	可変遅延装置
JPH0729373A (ja) *	1993-07-08	1995-01-31	Mitsubishi Electric Corp	半導体記憶装置
US6209071B1 (en) *	1996-05-07	2001-03-27	Rambus Inc.	Asynchronous request/synchronous data dynamic random access memory
US6219218B1 (en) *	1997-01-31	2001-04-17	The United States Of America As Represented By The Secretary Of The Navy	Magnetic flux suppression system
US6438043B2 (en) *	1998-09-02	2002-08-20	Micron Technology, Inc.	Adjustable I/O timing from externally applied voltage
JP2000163969A (ja) *	1998-09-16	2000-06-16	Fujitsu Ltd	半導体記憶装置
JP2001084791A (ja) *	1999-07-12	2001-03-30	Mitsubishi Electric Corp	半導体記憶装置
US6570804B1 (en) *	2000-08-29	2003-05-27	Micron Technology, Inc.	Fuse read sequence for auto refresh power reduction
US6788593B2 (en) *	2001-02-28	2004-09-07	Rambus, Inc.	Asynchronous, high-bandwidth memory component using calibrated timing elements
JP2003143240A (ja)	2001-10-31	2003-05-16	Matsushita Electric Ind Co Ltd	データ伝送回路、及び半導体集積回路
JP3866594B2 (ja)	2002-03-15	2007-01-10	Ｎｅｃエレクトロニクス株式会社	遅延回路と半導体記憶装置及び半導体記憶装置の制御方法
KR100434512B1 (ko)	2002-08-13	2004-06-05	삼성전자주식회사	데이터 라인을 프리차지하는 회로를 구비하는 반도체메모리장치
US7035150B2 (en) *	2002-10-31	2006-04-25	Infineon Technologies Ag	Memory device with column select being variably delayed
KR20040054935A (ko) *	2002-12-18	2004-06-26	주식회사 하이닉스반도체	반도체 메모리 장치의 리페어 장치
JP3935928B2 (ja)	2003-03-25	2007-06-27	富士通株式会社	遅延回路、および遅延回路の制御方法
US6944090B2 (en) *	2003-06-30	2005-09-13	International Business Machines Corporation	Method and circuit for precise timing of signals in an embedded DRAM array
JP4221329B2 (ja)	2004-04-28	2009-02-12	パナソニック株式会社	半導体記憶装置
JP2005348296A (ja)	2004-06-07	2005-12-15	Matsushita Electric Ind Co Ltd	半導体集積回路
KR100558013B1 (ko)	2004-07-22	2006-03-06	삼성전자주식회사	반도체 메모리 장치 및 이의 글로벌 입출력 라인 프리차지방법
KR100624296B1 (ko) *	2004-11-08	2006-09-19	주식회사 하이닉스반도체	반도체 메모리 소자

2007
- 2007-06-26 KR KR1020070063310A patent/KR100893577B1/ko active IP Right Grant
- 2007-12-31 US US12/003,680 patent/US7706196B2/en active Active
2008
- 2008-01-10 TW TW097101011A patent/TWI358731B/zh active

Also Published As

Publication number	Publication date
US20090003096A1 (en)	2009-01-01
TW200901217A (en)	2009-01-01
US7706196B2 (en)	2010-04-27
KR100893577B1 (ko)	2009-04-17
KR20080114083A (ko)	2008-12-31

Publication	Publication Date	Title
TWI340486B (en)	2011-04-11	Semiconductor memory device
TWI370500B (en)	2012-08-11	Semiconductor device
TWI319877B (en)	2010-01-21	Semiconductor memory device
EP2186095A4 (en)	2010-12-01	NON-IGNITIC SEMICONDUCTOR MEMORY
EP2225643A4 (en)	2013-07-03	SEMICONDUCTOR STORAGE DEVICE
EP2109892A4 (en)	2011-03-23	SEMICONDUCTOR DEVICE
EP2061075A4 (en)	2012-06-13	SEMICONDUCTOR DEVICE
EP2149884A4 (en)	2011-07-27	SEMICONDUCTOR MEMORY
EP2251901A4 (en)	2012-08-29	SEMICONDUCTOR DEVICE
EP2232498A4 (en)	2011-01-19	NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
EP2308084A4 (en)	2012-05-23	NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
EP2235721A4 (en)	2011-08-17	NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
EP2219224A4 (en)	2010-11-17	SEMICONDUCTOR COMPONENT
HK1128099A1 (en)	2009-10-16	Semiconductor device
EP2028692A4 (en)	2009-12-23	SEMICONDUCTOR COMPONENT
EP2002383A4 (en)	2009-09-16	SEMICONDUCTOR COMPONENT
EP1956648A4 (en)	2011-09-21	SEMICONDUCTOR DEVICE
EP2149842A4 (en)	2011-04-06	SEMICONDUCTOR DEVICE
EP2023393A4 (en)	2011-08-03	SEMICONDUCTOR DEVICE
EP2088620A4 (en)	2011-11-30	SEMICONDUCTOR DEVICE
EP2139036A4 (en)	2010-05-26	SEMICONDUCTOR DEVICE
EP2051301A4 (en)	2010-06-16	SEMICONDUCTOR DEVICE
EP2109886A4 (en)	2010-05-26	SEMICONDUCTOR DEVICE
EP1983563A4 (en)	2009-07-29	SEMICONDUCTOR COMPONENT
EP2225648A4 (en)	2011-02-16	SEMICONDUCTOR STORAGE DEVICE