TWI354309B - Plasma processing reactor with multiple capacitive - Google Patents

Plasma processing reactor with multiple capacitive Download PDF

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Publication number
TWI354309B
TWI354309B TW096105721A TW96105721A TWI354309B TW I354309 B TWI354309 B TW I354309B TW 096105721 A TW096105721 A TW 096105721A TW 96105721 A TW96105721 A TW 96105721A TW I354309 B TWI354309 B TW I354309B
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Taiwan
Prior art keywords
electrode
lower electrode
plasma processing
chamber
ring
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TW096105721A
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English (en)
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TW200811905A (en
Inventor
Rajinder Dhindsa
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Lam Res Corp
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F5/00—Electrolytic stripping of metallic layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B6/00—Cleaning by electrostatic means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Description

1354309 九、發明說明： 【發明所屬之技術領域】 本發明係關於具有多數之電宏#月恭式M·兩 應器。 f及包感性氧源的電漿處理反 【先前技術】 料裝置(如積體電路或平面顯示器〕之製迭期門姑 護的區域，並留下期望之圖案。钱批作件未制兹刻遮罩保 所形與侧化學品 硬體上。沈積後之副產生會隨著：之基之處理室 通常^_基板後施行處理室清理程縣達成。 料。ίΐ=ίί=^ΐ=自㈣舰侧介電材 選擇率的優點。然而，舍在美對下層及光阻層具有較高 靜電夾頭。靜森擊， =====命降低‘心 電夾頭之上方的中m產m容，合電聚係主要集中在靜 體。為了完全地清理週邊處理室硬體有室硬 衝擊了製造的生產率。在現行的電容性:4=ΐ;在: 6 1354309 侧）每片基板後的處理室清理通常利用上述之限制來加以 清理ίΓίί問題’需要―種方法及設備來提縣佳的處理官 靜電失頭的壽命，改善基板良率，= 【發明内容】 來滿以供敝處理室清理機制 處理、設備或系多種方式來加以實施，包含 =’具有响下電極及設置在内_ ^ = .下電極組 内部下電極係用以容納基板。部下電極’ 正上方?組件，其中上電容性電極係設置在内 ，ί含内極處理室包含：下電極 包含位於内部及卜、2方^處理室包含··上電極組件， 與内部下電=及1卜部下電極。該上電極 二 4下電極及上電極係用以將形纽分相關的一區 Ϊ之空腔之第-區域内的第—、/上Γ電極組件與上電極組 上電極係‘性耦合電 釋文為第二電容性輕合電漿。股之第一區域内的第二氣 在更另—實施例中，. 由開始供給處理氣體至ίίί=ί中產生電浆的方 =外部下電極而產生電漿，=中。此方法接著藉 一心且®繞下電極組件之内部極為下電極組件的 7

Claims (1)

100年8月5曰修正替換頁 二申J專利範圍·· 電裝處理室’具有—電漿處理區域及—電漿清理區域，該 下電極組件，由以下各者所定義： 内，下電極，定義該電漿處理區域； 極定柿設置在該内部下電極之外侧，該外部下電 板域，其中該内部下電極係用以支持基 傲2外。卩下電極係置於導電環之下方； 介電iJf内内部下電極與該外部下電極之間，該 買使勒。卩下電極触外部下電極電絕緣； 部下峨細至該内 下電ΐ的電中t有導上 上電極係設置在該内部及外部 万八中该導杨係曝露至該上電極並朝向該上電極。 2*如申請專利範圍第！項之電 上電極係用以將第-氣體轉變為第一電聚:、中該内部下電極及該 3 卜如申請專利範圍第1項之電聚處， 士電極係用以將第二氣體轉變為第二電装下電極及該 碾離該内部下電極處，且設置於該 电漿係集中於 周園區域， 以清理該上‘間的 4·如申請專利範圍第1項之電聚處理室 複數限制環’亂繞該上電極組件及n 制環係懸置而平行於該電漿處理室内之該且件，該複數限 下電極為電 1354309 6. 一 100年,8月5曰修正替換頁 96105721(無劃線） 以產蝴，該電聚處理卜电極組件，由下列各者所定義： 枝内部下電極； 外部下電極，設置在該内部3電極係用以容納基板，且該外部 方； 1卜电極係置於導電環 室包含 之下 該介電内部下電極與該外部下電極之間， 〜電喊该内部下電極與該外部下電極丨卜电徑之門 部下電極或該外部下電極；及 〜欣）月⑶連接至該内 電源，下電極’使得當該開關將該即 提供額收時及料部下雜德祕理期間 外部上ίί，其中該上電極係設置於該内部及 環 ，謝纖物卩珊上㈣導電 i雷H專概圍第6項之電理室，其中_部下電極及該 電極係用以將第一氣體轉變為第一電漿。 田專利範圍第6項之電浆處理室，其中該外部下電極及該 遠離謂第二氣體轉變為第二電漿，該第二電漿係集中於 周圖下電極處’且設置於該外部下電極與該上電極之間的 固£域，以清理該電漿處理室之週邊腔室硬體。 9.如申請專利範圍第6項之電漿處理室，更包含： 複數限制環，圍繞該上電極組件及該下電極組件， ^係懸置而平行於該電漿處理室内之該下電極。 複 22 1354309 100年8月5日修正替換頁 96105721(無劃線） 10.如申請專利範圍溱6項之電漿處理室，其中該外部下電極為 電容式電極。 十一、圖式： 23 100年8月5曰修正替換頁 96105721(無劃線） 1354309 . 七、指定代表圖： (一） 本案指定代表圖為：第（1A )圖 (二) 本代表圖之元件符號簡單說明： 100 :電漿處理設備 1_10 .上電極組件 111 :第一上電極 112 :第二上電極(感應線圈） 113:介電材料 114 :法拉第擋件 115 :導電性擋件 116:介電環 117:處理室罩蓋 118:接地件 120 :絕緣體 121 :限制環 122 :限制環 123 :限制環 126 : RF匹配 127 : RF電源 128 :氣體饋送件 131 :下電極 132 :介電環 133 :導電環 135 :接地件 - 136 :介電材料 138 : RF(射頻）匹配 139 : RF電源 140 :室壁 148 :接地件 4
TW096105721A 2006-02-15 2007-02-15 Plasma processing reactor with multiple capacitive TWI354309B (en)

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Application Number Priority Date Filing Date Title
US11/355,458 US8012306B2 (en) 2006-02-15 2006-02-15 Plasma processing reactor with multiple capacitive and inductive power sources

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TW200811905A TW200811905A (en) 2008-03-01
TWI354309B true TWI354309B (en) 2011-12-11

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US (3) US8012306B2 (zh)
EP (1) EP1993745B1 (zh)
JP (3) JP5336199B2 (zh)
KR (2) KR101455954B1 (zh)
CN (1) CN101557885B (zh)
AT (1) ATE552923T1 (zh)
MY (1) MY151896A (zh)
SG (1) SG169982A1 (zh)
TW (1) TWI354309B (zh)
WO (1) WO2007095388A2 (zh)

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