TWI354309B - Plasma processing reactor with multiple capacitive - Google Patents
Plasma processing reactor with multiple capacitive Download PDFInfo
- Publication number
- TWI354309B TWI354309B TW096105721A TW96105721A TWI354309B TW I354309 B TWI354309 B TW I354309B TW 096105721 A TW096105721 A TW 096105721A TW 96105721 A TW96105721 A TW 96105721A TW I354309 B TWI354309 B TW I354309B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- lower electrode
- plasma processing
- chamber
- ring
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
1354309 九、發明說明: 【發明所屬之技術領域】 本發明係關於具有多數之電宏#月恭式M·兩 應器。 f及包感性氧源的電漿處理反 【先前技術】 料裝置(如積體電路或平面顯示器〕之製迭期門姑 護的區域,並留下期望之圖案。钱批作件未制兹刻遮罩保 所形與侧化學品 硬體上。沈積後之副產生會隨著:之基之處理室 通常^_基板後施行處理室清理程縣達成。 料。ίΐ=ίί=^ΐ=自㈣舰侧介電材 選擇率的優點。然而,舍在美對下層及光阻層具有較高 靜電夾頭。靜森擊, =====命降低‘心 電夾頭之上方的中m產m容,合電聚係主要集中在靜 體。為了完全地清理週邊處理室硬體有室硬 衝擊了製造的生產率。在現行的電容性:4=ΐ;在: 6 1354309 侧)每片基板後的處理室清理通常利用上述之限制來加以 清理ίΓίί問題’需要―種方法及設備來提縣佳的處理官 靜電失頭的壽命,改善基板良率,= 【發明内容】 來滿以供敝處理室清理機制 處理、設備或系多種方式來加以實施,包含 =’具有响下電極及設置在内_ ^ = .下電極組 内部下電極係用以容納基板。部下電極’ 正上方?組件,其中上電容性電極係設置在内 ,ί含内極處理室包含:下電極 包含位於内部及卜、2方^處理室包含··上電極組件, 與内部下電=及1卜部下電極。該上電極 二 4下電極及上電極係用以將形纽分相關的一區 Ϊ之空腔之第-區域内的第—、/上Γ電極組件與上電極組 上電極係‘性耦合電 釋文為第二電容性輕合電漿。股之第一區域内的第二氣 在更另—實施例中,. 由開始供給處理氣體至ίίί=ί中產生電浆的方 =外部下電極而產生電漿,=中。此方法接著藉 一心且®繞下電極組件之内部極為下電極組件的 7
Claims (1)
100年8月5曰修正替換頁 二申J專利範圍·· 電裝處理室’具有—電漿處理區域及—電漿清理區域,該 下電極組件,由以下各者所定義: 内,下電極,定義該電漿處理區域; 極定柿設置在該内部下電極之外侧,該外部下電 板域,其中該内部下電極係用以支持基 傲2外。卩下電極係置於導電環之下方; 介電iJf内内部下電極與該外部下電極之間,該 買使勒。卩下電極触外部下電極電絕緣; 部下峨細至該内 下電ΐ的電中t有導上 上電極係設置在該内部及外部 万八中该導杨係曝露至該上電極並朝向該上電極。 2*如申請專利範圍第!項之電 上電極係用以將第-氣體轉變為第一電聚:、中該内部下電極及該 3 卜如申請專利範圍第1項之電聚處, 士電極係用以將第二氣體轉變為第二電装下電極及該 碾離該内部下電極處,且設置於該 电漿係集中於 周園區域, 以清理該上‘間的 4·如申請專利範圍第1項之電聚處理室 複數限制環’亂繞該上電極組件及n 制環係懸置而平行於該電漿處理室内之該且件,該複數限 下電極為電 1354309 6. 一 100年,8月5曰修正替換頁 96105721(無劃線) 以產蝴,該電聚處理卜电極組件,由下列各者所定義: 枝内部下電極; 外部下電極,設置在該内部3電極係用以容納基板,且該外部 方; 1卜电極係置於導電環 室包含 之下 該介電内部下電極與該外部下電極之間, 〜電喊该内部下電極與該外部下電極丨卜电徑之門 部下電極或該外部下電極;及 〜欣)月⑶連接至該内 電源,下電極’使得當該開關將該即 提供額收時及料部下雜德祕理期間 外部上ίί,其中該上電極係設置於該内部及 環 ,謝纖物卩珊上㈣導電 i雷H專概圍第6項之電理室,其中_部下電極及該 電極係用以將第一氣體轉變為第一電漿。 田專利範圍第6項之電浆處理室,其中該外部下電極及該 遠離謂第二氣體轉變為第二電漿,該第二電漿係集中於 周圖下電極處’且設置於該外部下電極與該上電極之間的 固£域,以清理該電漿處理室之週邊腔室硬體。 9.如申請專利範圍第6項之電漿處理室,更包含: 複數限制環,圍繞該上電極組件及該下電極組件, ^係懸置而平行於該電漿處理室内之該下電極。 複 22 1354309 100年8月5日修正替換頁 96105721(無劃線) 10.如申請專利範圍溱6項之電漿處理室,其中該外部下電極為 電容式電極。 十一、圖式: 23 100年8月5曰修正替換頁 96105721(無劃線) 1354309 . 七、指定代表圖: (一) 本案指定代表圖為:第(1A )圖 (二) 本代表圖之元件符號簡單說明: 100 :電漿處理設備 1_10 .上電極組件 111 :第一上電極 112 :第二上電極(感應線圈) 113:介電材料 114 :法拉第擋件 115 :導電性擋件 116:介電環 117:處理室罩蓋 118:接地件 120 :絕緣體 121 :限制環 122 :限制環 123 :限制環 126 : RF匹配 127 : RF電源 128 :氣體饋送件 131 :下電極 132 :介電環 133 :導電環 135 :接地件 - 136 :介電材料 138 : RF(射頻)匹配 139 : RF電源 140 :室壁 148 :接地件 4
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/355,458 US8012306B2 (en) | 2006-02-15 | 2006-02-15 | Plasma processing reactor with multiple capacitive and inductive power sources |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200811905A TW200811905A (en) | 2008-03-01 |
TWI354309B true TWI354309B (en) | 2011-12-11 |
Family
ID=38367027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096105721A TWI354309B (en) | 2006-02-15 | 2007-02-15 | Plasma processing reactor with multiple capacitive |
Country Status (10)
Country | Link |
---|---|
US (3) | US8012306B2 (zh) |
EP (1) | EP1993745B1 (zh) |
JP (3) | JP5336199B2 (zh) |
KR (2) | KR101455954B1 (zh) |
CN (1) | CN101557885B (zh) |
AT (1) | ATE552923T1 (zh) |
MY (1) | MY151896A (zh) |
SG (1) | SG169982A1 (zh) |
TW (1) | TWI354309B (zh) |
WO (1) | WO2007095388A2 (zh) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070068623A1 (en) * | 2005-09-27 | 2007-03-29 | Yunsang Kim | Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor |
US7909960B2 (en) * | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
US8911590B2 (en) * | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
US20070245960A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density |
US9184043B2 (en) * | 2006-05-24 | 2015-11-10 | Lam Research Corporation | Edge electrodes with dielectric covers |
US8398778B2 (en) | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
EP2053631A1 (fr) * | 2007-10-22 | 2009-04-29 | Industrial Plasma Services & Technologies - IPST GmbH | Procédé et dispositif pour le traitement par plasma de substrats au défilé |
US20090286397A1 (en) * | 2008-05-15 | 2009-11-19 | Lam Research Corporation | Selective inductive double patterning |
US8299391B2 (en) * | 2008-07-30 | 2012-10-30 | Applied Materials, Inc. | Field enhanced inductively coupled plasma (Fe-ICP) reactor |
US8382941B2 (en) | 2008-09-15 | 2013-02-26 | Micron Technology, Inc. | Plasma reactor with adjustable plasma electrodes and associated methods |
US20100098875A1 (en) * | 2008-10-17 | 2010-04-22 | Andreas Fischer | Pre-coating and wafer-less auto-cleaning system and method |
US8317450B2 (en) * | 2008-10-30 | 2012-11-27 | Lam Research Corporation | Tactile wafer lifter and methods for operating the same |
JP5391659B2 (ja) * | 2008-11-18 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
US8900471B2 (en) * | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
JP5657262B2 (ja) | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
US9287092B2 (en) | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
US9117767B2 (en) | 2011-07-21 | 2015-08-25 | Lam Research Corporation | Negative ion control for dielectric etch |
US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
JP5730521B2 (ja) * | 2010-09-08 | 2015-06-10 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
US20120088371A1 (en) * | 2010-10-07 | 2012-04-12 | Applied Materials, Inc. | Methods for etching substrates using pulsed dc voltage |
US20130098390A1 (en) * | 2011-10-25 | 2013-04-25 | Infineon Technologies Ag | Device for processing a carrier and a method for processing a carrier |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
CN104024477B (zh) * | 2011-11-23 | 2016-05-18 | 朗姆研究公司 | 多区域气体注入上电极*** |
US20130220975A1 (en) * | 2012-02-27 | 2013-08-29 | Rajinder Dhindsa | Hybrid plasma processing systems |
US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
US9210790B2 (en) | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
WO2014036000A1 (en) | 2012-08-28 | 2014-03-06 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
CN104217914B (zh) * | 2013-05-31 | 2016-12-28 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
JP6574547B2 (ja) | 2013-12-12 | 2019-09-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN103752562A (zh) * | 2014-02-13 | 2014-04-30 | 苏州众显电子科技有限公司 | 一种利用等离子清洗机洗液晶显示屏基板工艺 |
CN205741208U (zh) * | 2015-09-16 | 2016-11-30 | 应用材料公司 | 用于改进的等离子体处理腔室的***和设备 |
CN106548914B (zh) * | 2015-09-17 | 2018-10-30 | 中微半导体设备(上海)有限公司 | 一种等离子体处理设备及其清洗***和方法 |
CN106920726B (zh) * | 2015-12-24 | 2018-10-12 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及其清洗方法 |
CN109478489B (zh) | 2016-07-14 | 2021-08-10 | 东京毅力科创株式会社 | 用于多区域电极阵列中的rf功率分配的方法 |
CN108269728A (zh) * | 2016-12-30 | 2018-07-10 | 中微半导体设备(上海)有限公司 | 电容耦合等离子体处理装置与等离子体处理方法 |
CN107610999A (zh) * | 2017-08-28 | 2018-01-19 | 北京北方华创微电子装备有限公司 | 下电极机构及反应腔室 |
JP7235761B2 (ja) | 2017-11-17 | 2023-03-08 | エーイーエス グローバル ホールディングス, プライベート リミテッド | プラズマ処理源および基板バイアスの同期パルス化 |
JP2021503702A (ja) | 2017-11-17 | 2021-02-12 | エーイーエス グローバル ホールディングス, プライベート リミテッド | プラズマ処理システムにおける変調供給源の改良された印加 |
WO2019099925A1 (en) | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Spatial and temporal control of ion bias voltage for plasma processing |
TWI697261B (zh) * | 2018-05-22 | 2020-06-21 | 呈睿國際股份有限公司 | 感應耦合電漿蝕刻系統及其切換式匹配裝置 |
US11094508B2 (en) * | 2018-12-14 | 2021-08-17 | Applied Materials, Inc. | Film stress control for plasma enhanced chemical vapor deposition |
US10588212B1 (en) * | 2019-05-22 | 2020-03-10 | Georges J. Gorin | Plasma initiation in an inductive RF coupling mode |
CN112103163B (zh) * | 2019-06-17 | 2022-06-17 | 北京北方华创微电子装备有限公司 | 下电极装置及相关等离子体*** |
JP2022541004A (ja) | 2019-07-12 | 2022-09-21 | エーイーエス グローバル ホールディングス, プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
CN114730686A (zh) | 2019-09-06 | 2022-07-08 | 朗姆研究公司 | 用于半导体设备的吸附室壁 |
CN110867406A (zh) * | 2019-11-27 | 2020-03-06 | 北京北方华创微电子装备有限公司 | 静电卡盘及半导体加工设备 |
US20210319989A1 (en) * | 2020-04-13 | 2021-10-14 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
CN114496693A (zh) * | 2020-11-11 | 2022-05-13 | 中微半导体设备(上海)股份有限公司 | 多区加热装置、下电极组件、等离子处理装置及调温方法 |
US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
US20230317411A1 (en) * | 2022-03-13 | 2023-10-05 | Applied Materials, Inc. | Radio frequency source for inductively coupled and capacitively coupled plasmas in substrate processing chambers |
US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4793975A (en) | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
EP0202904B1 (en) | 1985-05-20 | 1991-04-10 | Tegal Corporation | Plasma reactor with removable insert |
JP2554896B2 (ja) | 1987-10-01 | 1996-11-20 | セイコーエプソン株式会社 | プラズマcvd装置 |
JPH0364460A (ja) | 1989-07-31 | 1991-03-19 | Hitachi Ltd | 薄膜形成装置 |
US5273588A (en) | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US5286297A (en) * | 1992-06-24 | 1994-02-15 | Texas Instruments Incorporated | Multi-electrode plasma processing apparatus |
US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5865896A (en) * | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
KR100276736B1 (ko) * | 1993-10-20 | 2001-03-02 | 히가시 데쓰로 | 플라즈마 처리장치 |
US6391147B2 (en) * | 1994-04-28 | 2002-05-21 | Tokyo Electron Limited | Plasma treatment method and apparatus |
EP0680072B1 (en) * | 1994-04-28 | 2003-10-08 | Applied Materials, Inc. | A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling |
US5540800A (en) * | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
US5685942A (en) * | 1994-12-05 | 1997-11-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
US5523261A (en) * | 1995-02-28 | 1996-06-04 | Micron Technology, Inc. | Method of cleaning high density inductively coupled plasma chamber using capacitive coupling |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US6902683B1 (en) | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
JP4084335B2 (ja) * | 1996-03-01 | 2008-04-30 | 株式会社日立製作所 | プラズマエッチング処理装置 |
JPH09260098A (ja) * | 1996-03-19 | 1997-10-03 | Fujitsu Ltd | プラズマ処理装置 |
US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
JP2929275B2 (ja) * | 1996-10-16 | 1999-08-03 | 株式会社アドテック | 透磁コアを有する誘導結合型−平面状プラズマの発生装置 |
US5983906A (en) | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
JPH10242134A (ja) | 1997-02-28 | 1998-09-11 | Sharp Corp | プラズマcvd装置 |
JPH10251849A (ja) | 1997-03-07 | 1998-09-22 | Tadahiro Omi | スパッタリング装置 |
JPH10326772A (ja) * | 1997-05-26 | 1998-12-08 | Ricoh Co Ltd | ドライエッチング装置 |
JP3676919B2 (ja) * | 1997-10-09 | 2005-07-27 | 株式会社アルバック | 反応性イオンエッチング装置 |
JP2000021598A (ja) * | 1998-07-02 | 2000-01-21 | Sony Corp | プラズマ処理装置 |
JP4066214B2 (ja) | 1998-07-24 | 2008-03-26 | 財団法人国際科学振興財団 | プラズマプロセス装置 |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
US6367413B1 (en) * | 1999-06-15 | 2002-04-09 | Tokyo Electron Limited | Apparatus for monitoring substrate biasing during plasma processing of a substrate |
US6232236B1 (en) * | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
US6518190B1 (en) | 1999-12-23 | 2003-02-11 | Applied Materials Inc. | Plasma reactor with dry clean apparatus and method |
US6447636B1 (en) | 2000-02-16 | 2002-09-10 | Applied Materials, Inc. | Plasma reactor with dynamic RF inductive and capacitive coupling control |
JP3586197B2 (ja) * | 2000-03-23 | 2004-11-10 | シャープ株式会社 | 薄膜形成用プラズマ成膜装置 |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
JP2003155569A (ja) * | 2001-11-16 | 2003-05-30 | Nec Kagoshima Ltd | プラズマcvd装置及びそのクリーニング方法 |
US6744212B2 (en) * | 2002-02-14 | 2004-06-01 | Lam Research Corporation | Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions |
KR100442194B1 (ko) | 2002-03-04 | 2004-07-30 | 주식회사 씨싸이언스 | 웨이퍼 건식 식각용 전극 |
US6841943B2 (en) * | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
JP2004349171A (ja) | 2003-05-23 | 2004-12-09 | Cataler Corp | 固体高分子型燃料電池用触媒層 |
KR20050004995A (ko) * | 2003-07-01 | 2005-01-13 | 삼성전자주식회사 | 플라즈마를 이용하는 기판 가공 장치 |
JP4413084B2 (ja) * | 2003-07-30 | 2010-02-10 | シャープ株式会社 | プラズマプロセス装置及びそのクリーニング方法 |
US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
US7144521B2 (en) | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
US20050241762A1 (en) | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
JP4456412B2 (ja) * | 2004-05-27 | 2010-04-28 | 株式会社日立製作所 | プラズマ処理装置 |
JP4773079B2 (ja) | 2004-11-26 | 2011-09-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法 |
US20060278339A1 (en) | 2005-06-13 | 2006-12-14 | Lam Research Corporation, A Delaware Corporation | Etch rate uniformity using the independent movement of electrode pieces |
US7683289B2 (en) | 2005-12-16 | 2010-03-23 | Lam Research Corporation | Apparatus and method for controlling plasma density profile |
US8911590B2 (en) * | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
-
2006
- 2006-02-15 US US11/355,458 patent/US8012306B2/en active Active
-
2007
- 2007-02-15 WO PCT/US2007/004235 patent/WO2007095388A2/en active Application Filing
- 2007-02-15 CN CN200780005750.6A patent/CN101557885B/zh active Active
- 2007-02-15 SG SG201101058-4A patent/SG169982A1/en unknown
- 2007-02-15 KR KR1020137025015A patent/KR101455954B1/ko active IP Right Grant
- 2007-02-15 KR KR1020087020075A patent/KR101391006B1/ko active IP Right Grant
- 2007-02-15 MY MYPI20083099 patent/MY151896A/en unknown
- 2007-02-15 AT AT07751025T patent/ATE552923T1/de active
- 2007-02-15 EP EP07751025A patent/EP1993745B1/en active Active
- 2007-02-15 JP JP2008555398A patent/JP5336199B2/ja active Active
- 2007-02-15 TW TW096105721A patent/TWI354309B/zh active
-
2011
- 2011-07-26 US US13/191,402 patent/US8337623B2/en active Active
-
2012
- 2012-06-21 JP JP2012139706A patent/JP5470421B2/ja active Active
- 2012-07-03 US US13/541,629 patent/US8906197B2/en not_active Expired - Fee Related
- 2012-12-27 JP JP2012285812A patent/JP5518174B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US8906197B2 (en) | 2014-12-09 |
CN101557885B (zh) | 2015-03-11 |
KR101455954B1 (ko) | 2014-10-31 |
US8337623B2 (en) | 2012-12-25 |
ATE552923T1 (de) | 2012-04-15 |
KR20080094794A (ko) | 2008-10-24 |
JP5518174B2 (ja) | 2014-06-11 |
WO2007095388A3 (en) | 2007-12-13 |
TW200811905A (en) | 2008-03-01 |
MY151896A (en) | 2014-07-14 |
CN101557885A (zh) | 2009-10-14 |
EP1993745A2 (en) | 2008-11-26 |
KR101391006B1 (ko) | 2014-04-30 |
EP1993745A4 (en) | 2010-03-17 |
JP2012212916A (ja) | 2012-11-01 |
JP2009527128A (ja) | 2009-07-23 |
US20120279659A1 (en) | 2012-11-08 |
WO2007095388A2 (en) | 2007-08-23 |
JP5470421B2 (ja) | 2014-04-16 |
US20070186855A1 (en) | 2007-08-16 |
US20110277784A1 (en) | 2011-11-17 |
US8012306B2 (en) | 2011-09-06 |
JP2013080956A (ja) | 2013-05-02 |
JP5336199B2 (ja) | 2013-11-06 |
SG169982A1 (en) | 2011-04-29 |
KR20130124394A (ko) | 2013-11-13 |
EP1993745B1 (en) | 2012-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI354309B (en) | Plasma processing reactor with multiple capacitive | |
JP5215875B2 (ja) | プラズマエッチングチャンバのための統合型の容量および誘導電源 | |
JP4904202B2 (ja) | プラズマ反応器 | |
KR101495507B1 (ko) | 다른 높이의 내부 및 외부 전극을 구비하는 캐소드 | |
US7777152B2 (en) | High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck | |
CN104217914B (zh) | 等离子体处理装置 | |
TW200824506A (en) | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof | |
TW201448032A (zh) | 等離子體處理裝置 | |
JP2011530143A5 (zh) | ||
TWI232515B (en) | Method for adjusting voltage on a powered faraday shield | |
WO2002025695A3 (en) | Tunable focus ring for plasma processing | |
JP4540797B2 (ja) | 基板処理チャンバ及び基板処理チャンバ用のアンテナコイルアセンブリ | |
TW200850081A (en) | Wide area radio frequency plasma apparatus for processing multiple substrates | |
TW201013830A (en) | Electrostatic chuck and manufacturing method for the same | |
CN106898534A (zh) | 等离子体约束环、等离子体处理装置与基片处理方法 | |
TW200301002A (en) | Plasma chamber insert ring | |
TW200926907A (en) | Plasma source having ferrite structures and plasma generating apparatus employing the same | |
CN104205319B (zh) | 具有射频(rf)回程路径的基板支撑件 | |
JP2001514444A (ja) | プラズマ処理チャンバへ安定した電力を送ることができる装置及び方法 | |
TW200812444A (en) | Compound plasma source and method for dissociating gases using the same | |
CN107633991A (zh) | 一种干法刻蚀设备 | |
CN102610476B (zh) | 一种静电吸盘 | |
KR101529499B1 (ko) | 가열 장치 및 이를 구비하는 플라즈마 처리 장치 | |
TW200618105A (en) | Plasma chamber system and method of ashing photoresist pattern formed on substrate having low-k dielectric layer using the same | |
CN212062403U (zh) | 一种等离子体刻蚀反应器 |