TWI347377B - A melter assembly and method for charging a crystal forming apparatus with molten source material - Google Patents
A melter assembly and method for charging a crystal forming apparatus with molten source materialInfo
- Publication number
- TWI347377B TWI347377B TW094120512A TW94120512A TWI347377B TW I347377 B TWI347377 B TW I347377B TW 094120512 A TW094120512 A TW 094120512A TW 94120512 A TW94120512 A TW 94120512A TW I347377 B TWI347377 B TW I347377B
- Authority
- TW
- Taiwan
- Prior art keywords
- charging
- forming apparatus
- source material
- crystal forming
- melter assembly
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Developing Agents For Electrophotography (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58130804P | 2004-06-18 | 2004-06-18 | |
US11/155,105 US7344594B2 (en) | 2004-06-18 | 2005-06-17 | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US11/155,104 US7465351B2 (en) | 2004-06-18 | 2005-06-17 | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US11/155,385 US7691199B2 (en) | 2004-06-18 | 2005-06-17 | Melter assembly and method for charging a crystal forming apparatus with molten source material |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200617220A TW200617220A (en) | 2006-06-01 |
TWI347377B true TWI347377B (en) | 2011-08-21 |
Family
ID=35351655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094120512A TWI347377B (en) | 2004-06-18 | 2005-06-20 | A melter assembly and method for charging a crystal forming apparatus with molten source material |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1756337B1 (zh) |
JP (1) | JP5080971B2 (zh) |
KR (1) | KR101300309B1 (zh) |
CN (2) | CN101006205B (zh) |
DE (1) | DE602005014103D1 (zh) |
TW (1) | TWI347377B (zh) |
WO (1) | WO2006009802A2 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1958925A1 (en) | 2007-02-13 | 2008-08-20 | Vivoxid Oy | A system and method for manufacturing fibres |
DE102008013326B4 (de) | 2008-03-10 | 2013-03-28 | Siltronic Ag | Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial |
KR101569711B1 (ko) * | 2008-05-20 | 2015-11-18 | 신에쯔 한도타이 가부시키가이샤 | 단결정 제조장치 |
JP5163386B2 (ja) * | 2008-09-17 | 2013-03-13 | 株式会社Sumco | シリコン融液形成装置 |
DE102009005837B4 (de) * | 2009-01-21 | 2011-10-06 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben |
DE102011007149A1 (de) * | 2011-04-11 | 2012-10-11 | Streicher Maschinenbau GmbH & Co. KG | Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur |
US9096946B2 (en) * | 2011-05-12 | 2015-08-04 | Korea Institute Of Energy Research | Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same |
CN102718221B (zh) * | 2012-06-28 | 2014-06-11 | 厦门大学 | 多晶硅自封堵浇铸装置 |
US9664448B2 (en) * | 2012-07-30 | 2017-05-30 | Solar World Industries America Inc. | Melting apparatus |
DE102013203740B4 (de) * | 2013-03-05 | 2020-06-18 | Solarworld Industries Gmbh | Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken |
JP6372079B2 (ja) * | 2013-12-27 | 2018-08-15 | シンフォニアテクノロジー株式会社 | 加熱溶解装置、加熱溶解システムおよび出湯制御装置 |
US10030317B2 (en) * | 2014-10-17 | 2018-07-24 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for controlling thickness of a crystalline sheet grown on a melt |
KR101671593B1 (ko) * | 2014-12-31 | 2016-11-01 | 주식회사 티씨케이 | 잉곳 성장장치의 리플렉터 |
JP6503933B2 (ja) * | 2015-07-02 | 2019-04-24 | 株式会社Sumco | シリコン融液供給装置及び方法並びにシリコン単結晶製造装置 |
TWI630365B (zh) * | 2016-11-11 | 2018-07-21 | 財團法人金屬工業研究發展中心 | Radon device with temperature control design and temperature control method thereof |
KR102135061B1 (ko) * | 2017-12-21 | 2020-07-17 | 주식회사 포스코 | 고휘발성 원소의 표준 시료 제조 장치 및 방법 |
CN111041554B (zh) * | 2020-01-16 | 2021-05-25 | 江苏大学 | 一种用于晶硅铸锭炉的载气导流装置及其导流方法 |
CN115852484B (zh) * | 2023-02-27 | 2023-05-16 | 杭州天桴光电技术有限公司 | 一种高效制备氟化镁多晶光学镀膜材料的装置和方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4106589C2 (de) * | 1991-03-01 | 1997-04-24 | Wacker Siltronic Halbleitermat | Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski |
US5178719A (en) * | 1991-08-20 | 1993-01-12 | Horiba Instruments, Inc. | Continuous refill crystal growth method |
US5993540A (en) * | 1995-06-16 | 1999-11-30 | Optoscint, Inc. | Continuous crystal plate growth process and apparatus |
US6800137B2 (en) * | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
JPH10279390A (ja) * | 1997-02-04 | 1998-10-20 | Komatsu Electron Metals Co Ltd | 石英るつぼへの原料装填装置及び原料装填方法 |
JPH1192276A (ja) * | 1997-09-22 | 1999-04-06 | Super Silicon Kenkyusho:Kk | 半導体単結晶の製造装置及び半導体単結晶の製造方法 |
FR2772741B1 (fr) * | 1997-12-19 | 2000-03-10 | Centre Nat Rech Scient | Procede et installation d'affinage du silicium |
US6402840B1 (en) * | 1999-08-10 | 2002-06-11 | Optoscint, Inc. | Crystal growth employing embedded purification chamber |
FR2831881B1 (fr) * | 2001-11-02 | 2004-01-16 | Hubert Lauvray | Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire |
FR2869028B1 (fr) * | 2004-04-20 | 2006-07-07 | Efd Induction Sa Sa | Procede et installation de fabrication de blocs d'un materiau semiconducteur |
-
2005
- 2005-06-17 JP JP2007516754A patent/JP5080971B2/ja not_active Expired - Fee Related
- 2005-06-17 DE DE602005014103T patent/DE602005014103D1/de active Active
- 2005-06-17 CN CN2005800280995A patent/CN101006205B/zh not_active Expired - Fee Related
- 2005-06-17 KR KR1020077001156A patent/KR101300309B1/ko not_active IP Right Cessation
- 2005-06-17 WO PCT/US2005/021369 patent/WO2006009802A2/en active Application Filing
- 2005-06-17 CN CN2009102657267A patent/CN101724903B/zh not_active Expired - Fee Related
- 2005-06-17 EP EP05788988A patent/EP1756337B1/en not_active Expired - Fee Related
- 2005-06-20 TW TW094120512A patent/TWI347377B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101724903B (zh) | 2013-02-13 |
WO2006009802A3 (en) | 2006-08-24 |
KR101300309B1 (ko) | 2013-08-28 |
CN101724903A (zh) | 2010-06-09 |
WO2006009802A2 (en) | 2006-01-26 |
DE602005014103D1 (de) | 2009-06-04 |
EP1756337B1 (en) | 2009-04-22 |
JP5080971B2 (ja) | 2012-11-21 |
EP1756337A2 (en) | 2007-02-28 |
JP2008503427A (ja) | 2008-02-07 |
CN101006205B (zh) | 2011-11-09 |
KR20070042971A (ko) | 2007-04-24 |
CN101006205A (zh) | 2007-07-25 |
TW200617220A (en) | 2006-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |