TWI341023B - Solid-state imaging device, method of manufacturing the same and camera module - Google Patents

Solid-state imaging device, method of manufacturing the same and camera module

Info

Publication number
TWI341023B
TWI341023B TW096114453A TW96114453A TWI341023B TW I341023 B TWI341023 B TW I341023B TW 096114453 A TW096114453 A TW 096114453A TW 96114453 A TW96114453 A TW 96114453A TW I341023 B TWI341023 B TW I341023B
Authority
TW
Taiwan
Prior art keywords
solid
manufacturing
imaging device
same
camera module
Prior art date
Application number
TW096114453A
Other languages
English (en)
Other versions
TW200746407A (en
Inventor
Takashi Abe
Ryoji Suzuki
Yoshiharu Kudoh
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200746407A publication Critical patent/TW200746407A/zh
Application granted granted Critical
Publication of TWI341023B publication Critical patent/TWI341023B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW096114453A 2006-05-25 2007-04-24 Solid-state imaging device, method of manufacturing the same and camera module TWI341023B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006145603A JP4193874B2 (ja) 2006-05-25 2006-05-25 固体撮像装置とその製造方法、及びカメラモジュール

Publications (2)

Publication Number Publication Date
TW200746407A TW200746407A (en) 2007-12-16
TWI341023B true TWI341023B (en) 2011-04-21

Family

ID=38749141

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114453A TWI341023B (en) 2006-05-25 2007-04-24 Solid-state imaging device, method of manufacturing the same and camera module

Country Status (5)

Country Link
US (2) US7940328B2 (zh)
JP (1) JP4193874B2 (zh)
KR (1) KR101371843B1 (zh)
CN (1) CN101079436A (zh)
TW (1) TWI341023B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4505488B2 (ja) * 2007-09-05 2010-07-21 シャープ株式会社 固体撮像素子および電子情報機器
US20090102211A1 (en) * 2007-10-22 2009-04-23 Amir Antar Portable pet waste receptacle
US8319301B2 (en) * 2008-02-11 2012-11-27 Omnivision Technologies, Inc. Self-aligned filter for an image sensor
JP5262180B2 (ja) * 2008-02-26 2013-08-14 ソニー株式会社 固体撮像装置及びカメラ
US8350939B2 (en) 2008-10-01 2013-01-08 Micron Technology, Inc. Vertical 4-way shared pixel in a single column with internal reset and no row select
JP5172584B2 (ja) * 2008-10-07 2013-03-27 株式会社東芝 撮像装置
US8405115B2 (en) * 2009-01-28 2013-03-26 Maxim Integrated Products, Inc. Light sensor using wafer-level packaging
JP5493448B2 (ja) * 2009-04-21 2014-05-14 ソニー株式会社 固体撮像装置および撮像装置
JP5783741B2 (ja) * 2011-02-09 2015-09-24 キヤノン株式会社 固体撮像装置、及び固体撮像装置の製造方法
JP5971106B2 (ja) 2012-12-17 2016-08-17 株式会社デンソー 光センサ
JP6180882B2 (ja) * 2013-10-31 2017-08-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、信号処理装置、および電子機器
US9947708B2 (en) 2015-02-13 2018-04-17 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
WO2023234069A1 (ja) * 2022-05-30 2023-12-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001306641A (ja) 2000-04-27 2001-11-02 Victor Co Of Japan Ltd 半導体集積回路の自動配置配線方法
JP3962561B2 (ja) * 2001-07-12 2007-08-22 キヤノン株式会社 固体撮像装置及びそれを用いた撮像システム
JP3870088B2 (ja) 2001-12-26 2007-01-17 キヤノン株式会社 固体撮像装置及びシステム
JP4221940B2 (ja) 2002-03-13 2009-02-12 ソニー株式会社 固体撮像素子及び固体撮像装置並びに撮像システム
JP3709873B2 (ja) 2003-02-19 2005-10-26 ソニー株式会社 固体撮像装置及び撮像カメラ
JP4075773B2 (ja) * 2003-11-05 2008-04-16 ソニー株式会社 固体撮像装置
US7214920B2 (en) * 2005-05-06 2007-05-08 Micron Technology, Inc. Pixel with spatially varying metal route positions
US7432491B2 (en) * 2005-05-06 2008-10-07 Micron Technology, Inc. Pixel with spatially varying sensor positions

Also Published As

Publication number Publication date
US8866941B2 (en) 2014-10-21
CN101079436A (zh) 2007-11-28
TW200746407A (en) 2007-12-16
KR20070114054A (ko) 2007-11-29
JP4193874B2 (ja) 2008-12-10
KR101371843B1 (ko) 2014-03-07
US7940328B2 (en) 2011-05-10
US20110285901A1 (en) 2011-11-24
US20070273779A1 (en) 2007-11-29
JP2007317870A (ja) 2007-12-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees