TWI338393B - Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method - Google Patents

Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method Download PDF

Info

Publication number: TWI338393B
Authority: TW; Taiwan
Prior art keywords: electrode; layer; emitting device; organic light; metal
Prior art date: 2006-02-03

Application number

TW096103869A

Other languages

English (en)

Chinese (zh)

Other versions

TW200739990A (en

Inventor

Jung-Hyoung Lee

Jung-Bum Kim

Yun-Hye Hahm

Original Assignee

Lg Chemical Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-02-03

Filing date

2007-02-02

Publication date

2011-03-01

2007-02-02 Application filed by Lg Chemical Ltd filed Critical Lg Chemical Ltd

2007-10-16 Publication of TW200739990A publication Critical patent/TW200739990A/zh

2011-03-01 Application granted granted Critical

2011-03-01 Publication of TWI338393B publication Critical patent/TWI338393B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 32
238000000034 method Methods 0.000 title claims description 30
229910052751 metal Inorganic materials 0.000 claims description 74
239000002184 metal Substances 0.000 claims description 74
239000011368 organic material Substances 0.000 claims description 38
238000002347 injection Methods 0.000 claims description 33
239000007924 injection Substances 0.000 claims description 33
230000003647 oxidation Effects 0.000 claims description 32
238000007254 oxidation reaction Methods 0.000 claims description 32
239000000463 material Substances 0.000 claims description 18
239000011575 calcium Substances 0.000 claims description 16
239000000758 substrate Substances 0.000 claims description 14
229910052782 aluminium Inorganic materials 0.000 claims description 13
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 12
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
229910052791 calcium Inorganic materials 0.000 claims description 12
239000001301 oxygen Substances 0.000 claims description 12
229910052760 oxygen Inorganic materials 0.000 claims description 12
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
229910052749 magnesium Inorganic materials 0.000 claims description 9
239000011777 magnesium Substances 0.000 claims description 9
239000000203 mixture Substances 0.000 claims description 9
238000006243 chemical reaction Methods 0.000 claims description 8
229910052783 alkali metal Inorganic materials 0.000 claims description 7
150000001340 alkali metals Chemical class 0.000 claims description 7
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
150000001342 alkaline earth metals Chemical class 0.000 claims description 4
229910052700 potassium Inorganic materials 0.000 claims description 4
239000011591 potassium Substances 0.000 claims description 4
229910052709 silver Inorganic materials 0.000 claims description 4
239000004332 silver Substances 0.000 claims description 4
229910052708 sodium Inorganic materials 0.000 claims description 4
239000011734 sodium Substances 0.000 claims description 4
229910052718 tin Inorganic materials 0.000 claims description 4
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
239000000956 alloy Substances 0.000 claims description 3
229910045601 alloy Inorganic materials 0.000 claims description 3
229910052804 chromium Inorganic materials 0.000 claims description 3
239000011651 chromium Substances 0.000 claims description 3
238000005286 illumination Methods 0.000 claims description 3
229910052750 molybdenum Inorganic materials 0.000 claims description 3
239000011733 molybdenum Substances 0.000 claims description 3
229910052738 indium Inorganic materials 0.000 claims description 2
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
229910052712 strontium Inorganic materials 0.000 claims description 2
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
235000017166 Bambusa arundinacea Nutrition 0.000 claims 1
235000017491 Bambusa tulda Nutrition 0.000 claims 1
241001330002 Bambuseae Species 0.000 claims 1
235000015334 Phyllostachys viridis Nutrition 0.000 claims 1
239000011425 bamboo Substances 0.000 claims 1
150000002739 metals Chemical class 0.000 claims 1
239000010410 layer Substances 0.000 description 144
230000000052 comparative effect Effects 0.000 description 12
230000008569 process Effects 0.000 description 9
238000000151 deposition Methods 0.000 description 7
238000004020 luminiscence type Methods 0.000 description 7
239000007787 solid Substances 0.000 description 7
PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
230000015572 biosynthetic process Effects 0.000 description 5
239000010408 film Substances 0.000 description 5
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
229910052737 gold Inorganic materials 0.000 description 4
239000010931 gold Substances 0.000 description 4
229910052744 lithium Inorganic materials 0.000 description 4
CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
229910044991 metal oxide Inorganic materials 0.000 description 4
150000004706 metal oxides Chemical class 0.000 description 4
238000012360 testing method Methods 0.000 description 4
238000010586 diagram Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000011521 glass Substances 0.000 description 3
230000005525 hole transport Effects 0.000 description 3
238000001459 lithography Methods 0.000 description 3
239000000395 magnesium oxide Substances 0.000 description 3
238000006479 redox reaction Methods 0.000 description 3
239000012780 transparent material Substances 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 2
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
239000000292 calcium oxide Substances 0.000 description 2
230000008859 change Effects 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
238000005530 etching Methods 0.000 description 2
AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
238000005259 measurement Methods 0.000 description 2
239000012044 organic layer Substances 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
230000004044 response Effects 0.000 description 2
239000002689 soil Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
238000002207 thermal evaporation Methods 0.000 description 2
239000010409 thin film Substances 0.000 description 2
239000011135 tin Substances 0.000 description 2
DMEVMYSQZPJFOK-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene Chemical group N1=NN=C2C3=CC=CC=C3C3=CC=NN=C3C2=N1 DMEVMYSQZPJFOK-UHFFFAOYSA-N 0.000 description 1
229910016287 MxOy Inorganic materials 0.000 description 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
VVJRYKIRUIWNGU-UHFFFAOYSA-N [Sr].[Sr] Chemical compound [Sr].[Sr] VVJRYKIRUIWNGU-UHFFFAOYSA-N 0.000 description 1
239000000654 additive Substances 0.000 description 1
230000000996 additive effect Effects 0.000 description 1
229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
229910000272 alkali metal oxide Inorganic materials 0.000 description 1
229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
239000010405 anode material Substances 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
BZHNHDOWFCBZNK-UHFFFAOYSA-N antimony lithium Chemical compound [Li].[Sb] BZHNHDOWFCBZNK-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000002585 base Substances 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
235000010290 biphenyl Nutrition 0.000 description 1
239000004305 biphenyl Substances 0.000 description 1
229910052792 caesium Inorganic materials 0.000 description 1
TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
238000005137 deposition process Methods 0.000 description 1
238000003618 dip coating Methods 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
230000005611 electricity Effects 0.000 description 1
238000004945 emulsification Methods 0.000 description 1
238000000605 extraction Methods 0.000 description 1
239000007789 gas Substances 0.000 description 1
230000005283 ground state Effects 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000007641 inkjet printing Methods 0.000 description 1
239000011133 lead Substances 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
229910001507 metal halide Inorganic materials 0.000 description 1
150000005309 metal halides Chemical class 0.000 description 1
239000007769 metal material Substances 0.000 description 1
239000008267 milk Substances 0.000 description 1
210000004080 milk Anatomy 0.000 description 1
235000013336 milk Nutrition 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
230000035935 pregnancy Effects 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
238000011160 research Methods 0.000 description 1
238000005096 rolling process Methods 0.000 description 1
229910052707 ruthenium Inorganic materials 0.000 description 1
238000007650 screen-printing Methods 0.000 description 1
239000002356 single layer Substances 0.000 description 1
239000002904 solvent Substances 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
230000002269 spontaneous effect Effects 0.000 description 1
238000010025 steaming Methods 0.000 description 1
229910001936 tantalum oxide Inorganic materials 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1
238000012546 transfer Methods 0.000 description 1
238000002834 transmittance Methods 0.000 description 1
TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1
YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
239000011787 zinc oxide Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers

Landscapes

Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Electroluminescent Light Sources (AREA)

TW096103869A 2006-02-03 2007-02-02 Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method TWI338393B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR20060010722		2006-02-03
US78228806P	2006-03-15	2006-03-15

Publications (2)

Publication Number	Publication Date
TW200739990A TW200739990A (en)	2007-10-16
TWI338393B true TWI338393B (en)	2011-03-01

Family

ID=40422073

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW096103869A TWI338393B (en)	2006-02-03	2007-02-02	Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method

Country Status (3)

Country	Link
JP (1)	JP4824776B2 (ja)
CN (1)	CN101379885B (ja)
TW (1)	TWI338393B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN113224253B (zh) *	2020-06-12	2022-07-12	广东聚华印刷显示技术有限公司	显示器件及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH08124679A (ja) *	1994-10-25	1996-05-17	Ibm Japan Ltd	エレクトロ・ルミネッセンス装置
JPH08185973A (ja) *	1994-12-27	1996-07-16	Fuji Xerox Co Ltd	有機電界発光素子およびその製造方法
US6255774B1 (en) *	1996-09-04	2001-07-03	Cambridge Display Technology, Ltd.	Multilayer cathode for organic light-emitting device
JP2845233B2 (ja) *	1997-01-29	1999-01-13	双葉電子工業株式会社	有機エレクトロルミネッセンス素子及びその製造方法
JP3804858B2 (ja) *	2001-08-31	2006-08-02	ソニー株式会社	有機電界発光素子およびその製造方法
US7157156B2 (en) *	2004-03-19	2007-01-02	Eastman Kodak Company	Organic light emitting device having improved stability

2007
- 2007-02-02 TW TW096103869A patent/TWI338393B/zh active
- 2007-02-02 JP JP2008553169A patent/JP4824776B2/ja active Active
- 2007-02-02 CN CN200780004252XA patent/CN101379885B/zh active Active

Also Published As

Publication number	Publication date
JP2009525579A (ja)	2009-07-09
JP4824776B2 (ja)	2011-11-30
TW200739990A (en)	2007-10-16
CN101379885B (zh)	2011-01-26
CN101379885A (zh)	2009-03-04

Publication	Publication Date	Title
US8338223B2 (en)	2012-12-25	Fabrication method for organic electronic device and organic electronic device fabricated by the same method
JP4292246B2 (ja)	2009-07-08	有機電界発光素子及びその製造方法
TWI408995B (zh)	2013-09-11	有機發光顯示器
JP4364201B2 (ja)	2009-11-11	有機エレクトロルミネッセンス素子
US8962382B2 (en)	2015-02-24	Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method
JP2008028371A (ja)	2008-02-07	有機発光装置
CN104167496B (zh)	2018-02-23	倒置式顶发射器件及其制备方法
JP2006253113A (ja)	2006-09-21	有機電界発光素子およびその製造方法
TWI580686B (zh)	2017-05-01	一種有機電致發光元件及其製備方法
JP2006196861A (ja)	2006-07-27	有機エレクトロルミネッセンス素子
JP5744457B2 (ja)	2015-07-08	有機発光表示装置およびその製造方法
TWI328300B (en)	2010-08-01	Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method
TW201248958A (en)	2012-12-01	Organic light emitting device
TWI338393B (en)	2011-03-01	Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method
JP3891430B2 (ja)	2007-03-14	有機ｅｌ発光素子およびその製造方法
JP3891435B2 (ja)	2007-03-14	有機ｅｌ素子およびその製造方法
CN105474426B (zh)	2018-01-02	制备有机发光器件的方法
TWI305065B (en)	2009-01-01	System for displaying images
JP2005276739A (ja)	2005-10-06	有機エレクトロルミネッセンス素子
JP2006313933A (ja)	2006-11-16	有機ｅｌ発光素子およびその製造方法
JP2010073548A (ja)	2010-04-02	有機ｅｌ素子及びその製造方法、並びに有機ｅｌ表示装置