TWI326011B - Process for preventing development defects and composition used therein - Google Patents

Process for preventing development defects and composition used therein Download PDF

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Publication number
TWI326011B
TWI326011B TW092116611A TW92116611A TWI326011B TW I326011 B TWI326011 B TW I326011B TW 092116611 A TW092116611 A TW 092116611A TW 92116611 A TW92116611 A TW 92116611A TW I326011 B TWI326011 B TW I326011B
Authority
TW
Taiwan
Prior art keywords
acid
chemically amplified
composition
development
surfactant
Prior art date
Application number
TW092116611A
Other languages
English (en)
Chinese (zh)
Other versions
TW200403535A (en
Inventor
Akiyama Yasushi
Takano Yusuke
Takahashi Kiyohisa
Sung-Eun Hong
Okayasu Tetsuo
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Publication of TW200403535A publication Critical patent/TW200403535A/zh
Application granted granted Critical
Publication of TWI326011B publication Critical patent/TWI326011B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW092116611A 2002-06-21 2003-06-19 Process for preventing development defects and composition used therein TWI326011B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002181127A JP3914468B2 (ja) 2002-06-21 2002-06-21 現像欠陥防止プロセスおよびそれに用いる組成物

Publications (2)

Publication Number Publication Date
TW200403535A TW200403535A (en) 2004-03-01
TWI326011B true TWI326011B (en) 2010-06-11

Family

ID=29996619

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092116611A TWI326011B (en) 2002-06-21 2003-06-19 Process for preventing development defects and composition used therein

Country Status (8)

Country Link
US (2) US7799513B2 (ko)
EP (1) EP1542077B1 (ko)
JP (1) JP3914468B2 (ko)
KR (1) KR100932085B1 (ko)
CN (1) CN100461005C (ko)
AT (1) ATE528695T1 (ko)
TW (1) TWI326011B (ko)
WO (1) WO2004001510A1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7214474B2 (en) * 2004-06-29 2007-05-08 Intel Corporation Wash composition with polymeric surfactant
US7799514B1 (en) * 2004-10-01 2010-09-21 Globalfoundries Inc Surface treatment with an acidic composition to prevent substrate and environmental contamination
KR100574993B1 (ko) * 2004-11-19 2006-05-02 삼성전자주식회사 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
JP4435196B2 (ja) * 2007-03-29 2010-03-17 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5222111B2 (ja) * 2008-11-26 2013-06-26 東京応化工業株式会社 レジスト表面改質液及びこれを利用したレジストパターン形成方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4222828A (en) * 1978-06-06 1980-09-16 Akzo N.V. Process for electro-codepositing inorganic particles and a metal on a surface
US4313978A (en) * 1978-12-20 1982-02-02 Minnesota Mining And Manufacturing Company Antistatic compositions and treatment
JPH0685070B2 (ja) 1985-02-04 1994-10-26 三菱電機株式会社 レジストパターンの現像方法
US4623487A (en) * 1985-03-14 1986-11-18 E. I. Du Pont De Nemours & Company Process for recovery of fluorosurfactants
JPS6232453A (ja) 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
JPH0451020A (ja) 1990-06-18 1992-02-19 Sony Corp 液晶表示装置及び液晶プロジェクタ
SG43691A1 (en) 1991-06-28 1997-11-14 Ibm Top antireflective coating films
JPH05326389A (ja) * 1992-05-20 1993-12-10 Fujitsu Ltd レジストパターンの形成方法
JP3192505B2 (ja) * 1992-11-13 2001-07-30 東京応化工業株式会社 半導体素子製造用パターン形成方法
JP2944857B2 (ja) 1993-06-25 1999-09-06 日本電信電話株式会社 オーバーコート材料
JP2803549B2 (ja) 1993-12-21 1998-09-24 信越化学工業株式会社 光反射性防止材料及びパターン形成方法
JP2878150B2 (ja) 1994-04-27 1999-04-05 東京応化工業株式会社 レジスト用塗布液およびこれを用いたレジスト材料
US5631314A (en) * 1994-04-27 1997-05-20 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition
JP2985688B2 (ja) 1994-09-21 1999-12-06 信越化学工業株式会社 水溶性膜材料及びパターン形成方法
US5714082A (en) * 1995-06-02 1998-02-03 Minnesota Mining And Manufacturing Company Aqueous anti-soiling composition
JP3336838B2 (ja) 1995-08-22 2002-10-21 富士ゼロックス株式会社 静電荷像現像用トナー、静電荷像現像剤および画像形成方法
JPH09246166A (ja) 1996-03-13 1997-09-19 Nittetsu Semiconductor Kk フォトレジストの現像方法
JPH09325500A (ja) * 1996-06-07 1997-12-16 Mitsubishi Chem Corp 表面反射防止塗布組成物及びパターン形成方法
JP3967466B2 (ja) * 1998-06-19 2007-08-29 信越化学工業株式会社 反射防止膜材料
JP2000275835A (ja) 1999-03-25 2000-10-06 Mitsubishi Chemicals Corp パターン形成方法
JP2001023893A (ja) 1999-07-12 2001-01-26 Nec Corp フォトレジストパターンの形成方法
JP3801398B2 (ja) * 1999-11-01 2006-07-26 信越化学工業株式会社 反射防止膜材料及びパターン形成方法
JP2001215734A (ja) 2000-02-04 2001-08-10 Tokyo Ohka Kogyo Co Ltd レジストパターンの表面欠陥減少方法及びそれに用いる表面欠陥減少用処理液
JP3320402B2 (ja) * 2000-06-26 2002-09-03 クラリアント ジャパン 株式会社 現像欠陥防止プロセス及び材料
JP3835521B2 (ja) * 2000-11-14 2006-10-18 信越化学工業株式会社 レジスト表面処理剤組成物
EP1379920A2 (en) * 2000-11-29 2004-01-14 E. I. du Pont de Nemours and Company Photoresist compositions comprising bases and surfactants for microlithography
JP3793920B2 (ja) 2002-07-23 2006-07-05 株式会社リコー 電子写真用トナーの製造方法、このトナーを用いた現像剤、現像方法、転写方法及びプロセスカートリッジ
US7358032B2 (en) 2002-11-08 2008-04-15 Fujifilm Corporation Planographic printing plate precursor

Also Published As

Publication number Publication date
US20100324330A1 (en) 2010-12-23
TW200403535A (en) 2004-03-01
JP3914468B2 (ja) 2007-05-16
WO2004001510A1 (ja) 2003-12-31
EP1542077B1 (en) 2011-10-12
US20050221236A1 (en) 2005-10-06
EP1542077A4 (en) 2009-02-25
CN100461005C (zh) 2009-02-11
KR20050023319A (ko) 2005-03-09
CN1662854A (zh) 2005-08-31
ATE528695T1 (de) 2011-10-15
JP2004029088A (ja) 2004-01-29
EP1542077A1 (en) 2005-06-15
US7799513B2 (en) 2010-09-21
KR100932085B1 (ko) 2009-12-16

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