JP4786636B2 - 反射防止膜形成用組成物およびそれを用いたパターン形成方法 - Google Patents
反射防止膜形成用組成物およびそれを用いたパターン形成方法 Download PDFInfo
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- JP4786636B2 JP4786636B2 JP2007334891A JP2007334891A JP4786636B2 JP 4786636 B2 JP4786636 B2 JP 4786636B2 JP 2007334891 A JP2007334891 A JP 2007334891A JP 2007334891 A JP2007334891 A JP 2007334891A JP 4786636 B2 JP4786636 B2 JP 4786636B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/04—Acyclic compounds
- C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Paints Or Removers (AREA)
Description
Lは炭素数1〜8の2価の連結基であり、
Aはアントラセン含有基であって、下記式(A):
−H、
−(CH2)n1OR’ 、
−(CH2)n1NHR’、
−(OCH2CH2)n2OR’、
−(CH2)n1SO3R”、
−(CH2)n1COOR”、
−(CH2)n1CONH2、および
−(CH2)n1SO2NH2、
(ここで、n1は0以上4以下の整数であり、n2は1以上40以下の整数であり、
R’は炭素数8以下のアルキル基、炭素数8以下のアシル基またはHであり、
R”は炭素数8以下のアルキル基、またはHである)
からなる群から選ばれる}]
で表される繰り返し単位を構成するモノマーであることが好ましい。
実施例1
式(Ia)のアントラセン骨格含有化合物:
シリコン基板上にMark8型スピンコーター(東京エレクトロン株式会社製)により光酸発生剤とポリヒドロキシスチレンポリマーを種骨格とする樹脂とを含有するポジ型化学増幅型レジスト組成物(DNC−5(商品名)、AZエレクトロニックマテリアルズ株式会社製)を膜厚が740nmから830nmの間で10nm間隔になるように、回転数を変更して塗布し、130℃で60秒間ソフトベーキング処理することにより、レジスト塗布済み基板を10枚得た。
上面反射膜形成用組成物の塗布条件を変更した他は実施例1Aと同様にして、上面反射膜の厚さが、それぞれ32、28、24、18.5、15、および13.5nmである実施例1B〜1Gの試料を形成させた。
モノエタノールアミンと、下記式(x)
−[CH2CF(OCF2CF2CF2COOH)]n− (x)
で表される重量平均分子量6200のフッ素含有重合体を含む水溶液とを用いて、フッ素含有重合体に含まれるカルボキシル基(酸)と、モノエタノールアミン(塩基)とのモル比が1:0.1となるように混合した。このようにして得られた部分的にモノエタノールアミン塩とされたフッ素含有重合体に純水を加え、さらに界面活性剤としてアルキルスルホン酸(アルキル基の炭素数は10〜18の混合物)の水溶液を加えて、部分的に塩とされたフッ素含有重合体を2.1重量%、アルキルスルホン酸を0.1重量%、水を97.8重量%含む、上面反射膜形成用組成物を調製した。得られた上面反射膜形成用組成物を、シリコン基板上にMark8型スピンコーター(商品名、東京エレクトロン株式会社製)により回転数1500rpmで塗布し、90℃で60秒間ソフトベーキング処理を行い、厚さ44nmの被膜を形成させた。得られた被膜について、VUV302型エリプソメーター(商品名、ジェーエーウーラム・ジャパン株式会社製)を用いて、波長248nmにおける屈折率はおよび消衰係数を測定したところ、それぞれ1.445および0であった。
参照例1として、上面反射防止膜を形成させないDNC−5レジスト膜を形成させた。シリコン基板上にMark8型スピンコーター(東京エレクトロン株式会社製)によりDNC−5を膜厚が740nmから830nmの間で10nm間隔になるように、回転数を変更して塗布し、130℃で60秒間ソフトベーキング処理することにより、レジスト塗布済み基板を10枚得た。
実施例1A〜1G、比較例1、および参照例1について、それぞれ全面露光し、120℃60秒で露光後のベーキング処理を行い、引き続いて現像した。現像後の基板を用いてEthを測定した。得られたスィングカーブは図1に示す通りであった。また、それから得られるスィング比は表1に示すとおりであった。スィング比は膜厚に応じて変化し、この例では膜厚15nm付近で極小となることがわかった。
Claims (6)
- 160〜260nmの光を用いてパターンを形成させるフォトリソグラフィーに用いる上面反射防止膜形成用組成物であって、前記上面反射防止膜形成用組成物が、親水性基を含んでなるアントラセン骨格含有重合体と溶媒とを含んでなり、前記アントラセン骨格含有重合体が、
アクリル酸、メタクリル酸、ビニルアルコール、ビニルピロリドン、アクリル酸エステル、メタクリル酸エステルからなる群から選択される少なくとも1種類のモノマーと、
下記一般式(I):
Lは炭素数1〜8の2価の連結基であり、
Aはアントラセン含有基であって、下記式(A):
−(CH 2 ) n1 OR’ 、
−(CH 2 ) n1 NHR’、
−(OCH 2 CH 2 ) n2 OR’、
−(CH 2 ) n1 SO 3 R”、
−(CH 2 ) n1 COOR”、
−(CH 2 ) n1 CONH 2 、および
−(CH 2 ) n1 SO 2 NH 2 、
(ここで、n1は0以上4以下の整数であり、n2は1以上40以下の整数であり、
R’は炭素数8以下のアルキル基、炭素数8以下のアシル基またはHであり、
R”は炭素数8以下のアルキル基、またはHである)
からなる群から選ばれる}]
で表される繰り返し単位を構成するモノマーと
のコポリマーであることを特徴とする、上面反射防止膜形成用組成物。 - 前記アントラセン骨格含有重合体以外のポリマーをさらに含んでなる、請求項1に記載の上面反射防止膜形成用組成物。
- 前記溶媒が、水、有機溶媒、または水と有機溶媒との混合物である、請求項1または2に記載の上面反射防止膜形成用組成物。
- 基板上にレジスト組成物を塗布してレジスト膜を形成させ、前記レジスト膜上に、請求項1〜3のいずれか一項に記載の上面反射防止膜形成用組成物を塗布し、乾燥させ、160〜260nmの光を用いて露光し、現像することを含んでなることを特徴とする、パターン形成方法。
- 形成される上面反射防止膜の膜厚が3nm以上50nm以下であり、248nmにおける消衰係数が0.1〜0.5である、請求項4に記載のパターン形成方法。
- 基板上にレジスト組成物を塗布してレジスト膜を形成させ、前記レジスト膜上に、請求項1〜3のいずれか一項に記載の上面反射防止膜形成用組成物を塗布し、乾燥させることにより形成されたことを特徴とする、上面反射防止膜。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007334891A JP4786636B2 (ja) | 2007-12-26 | 2007-12-26 | 反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
MYPI20102599 MY153129A (en) | 2007-12-26 | 2008-12-12 | Composition for formation of antireflective film, and pattern formation method using the composition |
EP08863406.8A EP2233978B1 (en) | 2007-12-26 | 2008-12-12 | Composition for formation of anti-reflective film, and pattern formation method using the composition |
US12/810,028 US20100279235A1 (en) | 2007-12-26 | 2008-12-12 | Composition for formation of top anti-reflective film, and pattern formation method using the composition |
PCT/JP2008/072681 WO2009081773A1 (ja) | 2007-12-26 | 2008-12-12 | 反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
CN2008801225113A CN101910946B (zh) | 2007-12-26 | 2008-12-12 | 用于形成抗反射膜的组合物以及使用该组合物的图案形成方法 |
KR1020107015937A KR20100103833A (ko) | 2007-12-26 | 2008-12-12 | 반사 방지막 형성용 조성물 및 이를 사용한 패턴 형성 방법 |
TW097150659A TWI505035B (zh) | 2007-12-26 | 2008-12-25 | 抗反射膜形成用組成物及使用其之圖案形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007334891A JP4786636B2 (ja) | 2007-12-26 | 2007-12-26 | 反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
Publications (3)
Publication Number | Publication Date |
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JP2009157080A JP2009157080A (ja) | 2009-07-16 |
JP2009157080A5 JP2009157080A5 (ja) | 2010-09-16 |
JP4786636B2 true JP4786636B2 (ja) | 2011-10-05 |
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JP2007334891A Expired - Fee Related JP4786636B2 (ja) | 2007-12-26 | 2007-12-26 | 反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20100279235A1 (ja) |
EP (1) | EP2233978B1 (ja) |
JP (1) | JP4786636B2 (ja) |
KR (1) | KR20100103833A (ja) |
CN (1) | CN101910946B (ja) |
MY (1) | MY153129A (ja) |
TW (1) | TWI505035B (ja) |
WO (1) | WO2009081773A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US8153351B2 (en) * | 2008-10-21 | 2012-04-10 | Advanced Micro Devices, Inc. | Methods for performing photolithography using BARCs having graded optical properties |
JP5697523B2 (ja) * | 2011-04-12 | 2015-04-08 | メルクパフォーマンスマテリアルズIp合同会社 | 上面反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
JP2013254109A (ja) * | 2012-06-07 | 2013-12-19 | Az Electronic Materials Mfg Co Ltd | 上層膜形成用組成物およびそれを用いたレジストパターン形成方法 |
JP6445760B2 (ja) * | 2013-11-22 | 2018-12-26 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 上層膜形成用組成物およびそれを用いたレジストパターン形成方法 |
US9804493B2 (en) | 2013-11-22 | 2017-10-31 | Samsung Electronics Co., Ltd. | Composition for forming topcoat layer and resist pattern formation method employing the same |
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US5180655A (en) * | 1988-10-28 | 1993-01-19 | Hewlett-Packard Company | Chemical compositions for improving photolithographic performance |
JP3334304B2 (ja) | 1993-11-30 | 2002-10-15 | ソニー株式会社 | 半導体装置の製造方法 |
JP3284056B2 (ja) * | 1995-09-12 | 2002-05-20 | 株式会社東芝 | 基板処理装置及びパターン形成方法 |
US6190839B1 (en) * | 1998-01-15 | 2001-02-20 | Shipley Company, L.L.C. | High conformality antireflective coating compositions |
KR100687850B1 (ko) * | 2000-06-30 | 2007-02-27 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
KR100828313B1 (ko) * | 2000-09-19 | 2008-05-08 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 반사방지 조성물 |
US7238462B2 (en) * | 2002-11-27 | 2007-07-03 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating material for wiring, embedded material, and wiring formation method |
JP4421566B2 (ja) * | 2005-12-26 | 2010-02-24 | チェイル インダストリーズ インコーポレイテッド | フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法 |
KR100713231B1 (ko) * | 2005-12-26 | 2007-05-02 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법 |
EP1806621A1 (en) * | 2006-01-08 | 2007-07-11 | Rohm and Haas Electronic Materials LLC | Coating compositions for photoresists |
US7919222B2 (en) * | 2006-01-29 | 2011-04-05 | Rohm And Haas Electronics Materials Llc | Coating compositions for use with an overcoated photoresist |
JP5112733B2 (ja) * | 2006-04-11 | 2013-01-09 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトリソグラフィ用コーティング組成物 |
JP4727567B2 (ja) * | 2006-12-27 | 2011-07-20 | Azエレクトロニックマテリアルズ株式会社 | 反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
-
2007
- 2007-12-26 JP JP2007334891A patent/JP4786636B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-12 MY MYPI20102599 patent/MY153129A/en unknown
- 2008-12-12 KR KR1020107015937A patent/KR20100103833A/ko not_active Application Discontinuation
- 2008-12-12 CN CN2008801225113A patent/CN101910946B/zh active Active
- 2008-12-12 EP EP08863406.8A patent/EP2233978B1/en not_active Not-in-force
- 2008-12-12 WO PCT/JP2008/072681 patent/WO2009081773A1/ja active Application Filing
- 2008-12-12 US US12/810,028 patent/US20100279235A1/en not_active Abandoned
- 2008-12-25 TW TW097150659A patent/TWI505035B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2233978A8 (en) | 2010-11-03 |
TW200937129A (en) | 2009-09-01 |
CN101910946A (zh) | 2010-12-08 |
JP2009157080A (ja) | 2009-07-16 |
MY153129A (en) | 2014-12-31 |
EP2233978A4 (en) | 2011-10-19 |
WO2009081773A1 (ja) | 2009-07-02 |
KR20100103833A (ko) | 2010-09-28 |
TWI505035B (zh) | 2015-10-21 |
EP2233978B1 (en) | 2018-11-28 |
CN101910946B (zh) | 2013-05-08 |
EP2233978A1 (en) | 2010-09-29 |
US20100279235A1 (en) | 2010-11-04 |
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