CN1662854A - 防止显影缺陷的方法及用于该方法的组合物 - Google Patents
防止显影缺陷的方法及用于该方法的组合物 Download PDFInfo
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- CN1662854A CN1662854A CN038139367A CN03813936A CN1662854A CN 1662854 A CN1662854 A CN 1662854A CN 038139367 A CN038139367 A CN 038139367A CN 03813936 A CN03813936 A CN 03813936A CN 1662854 A CN1662854 A CN 1662854A
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- acid
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- photoresist coating
- surfactant
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000007547 defect Effects 0.000 title claims description 67
- 238000011161 development Methods 0.000 title abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 73
- 238000000576 coating method Methods 0.000 claims abstract description 70
- 239000011248 coating agent Substances 0.000 claims abstract description 69
- 239000004094 surface-active agent Substances 0.000 claims abstract description 35
- 239000002253 acid Substances 0.000 claims abstract description 30
- -1 fluorinated alkyl quaternary ammonium salt Chemical class 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 14
- 150000005621 tetraalkylammonium salts Chemical class 0.000 claims abstract description 10
- 239000003513 alkali Substances 0.000 claims description 20
- 239000000428 dust Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 15
- 230000002708 enhancing effect Effects 0.000 claims description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 9
- 239000011707 mineral Substances 0.000 claims description 9
- ABDBNWQRPYOPDF-UHFFFAOYSA-N carbonofluoridic acid Chemical compound OC(F)=O ABDBNWQRPYOPDF-UHFFFAOYSA-N 0.000 claims description 7
- 238000005728 strengthening Methods 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 5
- 229940071870 hydroiodic acid Drugs 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 5
- AXRSOGFYDSXLQX-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluorohexanedioic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(O)=O AXRSOGFYDSXLQX-UHFFFAOYSA-N 0.000 abstract 1
- 150000007522 mineralic acids Chemical class 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 16
- 239000002585 base Substances 0.000 description 12
- 229920002554 vinyl polymer Polymers 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 9
- 230000002950 deficient Effects 0.000 description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 description 8
- 150000007516 brønsted-lowry acids Chemical class 0.000 description 8
- 150000007528 brønsted-lowry bases Chemical class 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
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- 239000004065 semiconductor Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- 229920002125 Sokalan® Polymers 0.000 description 3
- 239000002671 adjuvant Substances 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 239000004568 cement Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- AERBHQYSUWNIDS-UHFFFAOYSA-N 2-(1-methyl-4,5-dihydroimidazol-1-ium-1-yl)ethanol Chemical compound OCC[N+]1(C)CCN=C1 AERBHQYSUWNIDS-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- OAFVIANHONRIRR-UHFFFAOYSA-N 3-aminopentadecane-1-sulfonic acid Chemical compound CCCCCCCCCCCCC(N)CCS(O)(=O)=O OAFVIANHONRIRR-UHFFFAOYSA-N 0.000 description 1
- KBFJHOCTSIMQKL-UHFFFAOYSA-N 3-methoxycarbonylbut-3-enoic acid Chemical class COC(=O)C(=C)CC(O)=O KBFJHOCTSIMQKL-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
- 229920002675 Polyoxyl Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical group CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical compound [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002168 ethanoic acid esters Chemical class 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N propylene glycol Substances CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical group C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
显影前膜厚 | 显影后膜厚 | 膜厚的减少量 | 有机酸 | 碱 | 图形轮廓 | |
(埃) | (埃) | (埃) | ||||
实施例1 | 4819 | 4589 | 230 | 1 | 1.04 | 近似矩形 |
实施例2 | 4789 | 4460 | 329 | 1 | 1.25 | 矩形 |
实施例3 | 4796 | 4395 | 401 | 1 | 1.38 | 矩形 |
实施例4 | 4837 | 4379 | 458 | 1 | 1.52 | 近似矩形 |
实施例5 | 4809 | 4299 | 510 | 1 | 2.00 | 近似矩形 |
显影前膜厚 | 显影后膜厚 | 膜厚减少量 | 图形轮廓 | |
(埃) | (埃) | (埃) | ||
对比例1 | 4801 | 4698 | 103 | T顶 |
显影前膜厚 | 显影后膜厚 | 膜厚减少量 | 酸 | 碱 | 图形轮廓 | |
(埃) | (埃) | (埃) | ||||
对比例2 | 4820 | 4649 | 171 | 1 | 0.90 | T顶 |
对比例3 | 4805 | 4624 | 1 81 | 1 | 0.95 | T顶 |
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002181127A JP3914468B2 (ja) | 2002-06-21 | 2002-06-21 | 現像欠陥防止プロセスおよびそれに用いる組成物 |
JP181127/2002 | 2002-06-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1662854A true CN1662854A (zh) | 2005-08-31 |
CN100461005C CN100461005C (zh) | 2009-02-11 |
Family
ID=29996619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038139367A Expired - Fee Related CN100461005C (zh) | 2002-06-21 | 2003-06-10 | 防止显影缺陷的方法及用于该方法的组合物 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7799513B2 (zh) |
EP (1) | EP1542077B1 (zh) |
JP (1) | JP3914468B2 (zh) |
KR (1) | KR100932085B1 (zh) |
CN (1) | CN100461005C (zh) |
AT (1) | ATE528695T1 (zh) |
TW (1) | TWI326011B (zh) |
WO (1) | WO2004001510A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7214474B2 (en) * | 2004-06-29 | 2007-05-08 | Intel Corporation | Wash composition with polymeric surfactant |
US7799514B1 (en) * | 2004-10-01 | 2010-09-21 | Globalfoundries Inc | Surface treatment with an acidic composition to prevent substrate and environmental contamination |
KR100574993B1 (ko) * | 2004-11-19 | 2006-05-02 | 삼성전자주식회사 | 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법 |
JP4435196B2 (ja) * | 2007-03-29 | 2010-03-17 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
JP5222111B2 (ja) * | 2008-11-26 | 2013-06-26 | 東京応化工業株式会社 | レジスト表面改質液及びこれを利用したレジストパターン形成方法 |
Family Cites Families (28)
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US4222828A (en) * | 1978-06-06 | 1980-09-16 | Akzo N.V. | Process for electro-codepositing inorganic particles and a metal on a surface |
US4313978A (en) * | 1978-12-20 | 1982-02-02 | Minnesota Mining And Manufacturing Company | Antistatic compositions and treatment |
JPH0685070B2 (ja) | 1985-02-04 | 1994-10-26 | 三菱電機株式会社 | レジストパターンの現像方法 |
US4623487A (en) * | 1985-03-14 | 1986-11-18 | E. I. Du Pont De Nemours & Company | Process for recovery of fluorosurfactants |
JPS6232453A (ja) | 1985-08-06 | 1987-02-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト用現像液 |
JPH0451020A (ja) | 1990-06-18 | 1992-02-19 | Sony Corp | 液晶表示装置及び液晶プロジェクタ |
SG43691A1 (en) | 1991-06-28 | 1997-11-14 | Ibm | Top antireflective coating films |
JPH05326389A (ja) * | 1992-05-20 | 1993-12-10 | Fujitsu Ltd | レジストパターンの形成方法 |
JP3192505B2 (ja) * | 1992-11-13 | 2001-07-30 | 東京応化工業株式会社 | 半導体素子製造用パターン形成方法 |
JP2944857B2 (ja) | 1993-06-25 | 1999-09-06 | 日本電信電話株式会社 | オーバーコート材料 |
JP2803549B2 (ja) | 1993-12-21 | 1998-09-24 | 信越化学工業株式会社 | 光反射性防止材料及びパターン形成方法 |
JP2878150B2 (ja) | 1994-04-27 | 1999-04-05 | 東京応化工業株式会社 | レジスト用塗布液およびこれを用いたレジスト材料 |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
JP2985688B2 (ja) | 1994-09-21 | 1999-12-06 | 信越化学工業株式会社 | 水溶性膜材料及びパターン形成方法 |
US5714082A (en) * | 1995-06-02 | 1998-02-03 | Minnesota Mining And Manufacturing Company | Aqueous anti-soiling composition |
JP3336838B2 (ja) | 1995-08-22 | 2002-10-21 | 富士ゼロックス株式会社 | 静電荷像現像用トナー、静電荷像現像剤および画像形成方法 |
JPH09246166A (ja) | 1996-03-13 | 1997-09-19 | Nittetsu Semiconductor Kk | フォトレジストの現像方法 |
JPH09325500A (ja) * | 1996-06-07 | 1997-12-16 | Mitsubishi Chem Corp | 表面反射防止塗布組成物及びパターン形成方法 |
JP3967466B2 (ja) * | 1998-06-19 | 2007-08-29 | 信越化学工業株式会社 | 反射防止膜材料 |
JP2000275835A (ja) | 1999-03-25 | 2000-10-06 | Mitsubishi Chemicals Corp | パターン形成方法 |
JP2001023893A (ja) | 1999-07-12 | 2001-01-26 | Nec Corp | フォトレジストパターンの形成方法 |
JP3801398B2 (ja) * | 1999-11-01 | 2006-07-26 | 信越化学工業株式会社 | 反射防止膜材料及びパターン形成方法 |
JP2001215734A (ja) | 2000-02-04 | 2001-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターンの表面欠陥減少方法及びそれに用いる表面欠陥減少用処理液 |
JP3320402B2 (ja) * | 2000-06-26 | 2002-09-03 | クラリアント ジャパン 株式会社 | 現像欠陥防止プロセス及び材料 |
JP3835521B2 (ja) * | 2000-11-14 | 2006-10-18 | 信越化学工業株式会社 | レジスト表面処理剤組成物 |
EP1379920A2 (en) * | 2000-11-29 | 2004-01-14 | E. I. du Pont de Nemours and Company | Photoresist compositions comprising bases and surfactants for microlithography |
JP3793920B2 (ja) | 2002-07-23 | 2006-07-05 | 株式会社リコー | 電子写真用トナーの製造方法、このトナーを用いた現像剤、現像方法、転写方法及びプロセスカートリッジ |
US7358032B2 (en) | 2002-11-08 | 2008-04-15 | Fujifilm Corporation | Planographic printing plate precursor |
-
2002
- 2002-06-21 JP JP2002181127A patent/JP3914468B2/ja not_active Expired - Fee Related
-
2003
- 2003-06-10 CN CNB038139367A patent/CN100461005C/zh not_active Expired - Fee Related
- 2003-06-10 AT AT03736123T patent/ATE528695T1/de not_active IP Right Cessation
- 2003-06-10 EP EP03736123A patent/EP1542077B1/en not_active Expired - Lifetime
- 2003-06-10 KR KR1020047020753A patent/KR100932085B1/ko active IP Right Grant
- 2003-06-10 WO PCT/JP2003/007354 patent/WO2004001510A1/ja active Application Filing
- 2003-06-10 US US10/518,105 patent/US7799513B2/en not_active Expired - Fee Related
- 2003-06-19 TW TW092116611A patent/TWI326011B/zh not_active IP Right Cessation
-
2010
- 2010-08-10 US US12/853,640 patent/US20100324330A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20100324330A1 (en) | 2010-12-23 |
TWI326011B (en) | 2010-06-11 |
TW200403535A (en) | 2004-03-01 |
JP3914468B2 (ja) | 2007-05-16 |
WO2004001510A1 (ja) | 2003-12-31 |
EP1542077B1 (en) | 2011-10-12 |
US20050221236A1 (en) | 2005-10-06 |
EP1542077A4 (en) | 2009-02-25 |
CN100461005C (zh) | 2009-02-11 |
KR20050023319A (ko) | 2005-03-09 |
ATE528695T1 (de) | 2011-10-15 |
JP2004029088A (ja) | 2004-01-29 |
EP1542077A1 (en) | 2005-06-15 |
US7799513B2 (en) | 2010-09-21 |
KR100932085B1 (ko) | 2009-12-16 |
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