TWI304598B

TWI304598B - Emission source having carbon nanotube and method for making same

Info

Publication number: TWI304598B
Application number: TW95111394A
Authority: TW
Inventors: Yang Wei; Liang Liu; Wei Wei; Kai-Li Jiang; Shou-Shan Fan
Original assignee: Hon Hai Prec Ind Co Ltd
Priority date: 2006-03-31
Filing date: 2006-03-31
Publication date: 2008-12-21
Also published as: TW200737273A

Description

Ϊ304598 九、發明說明：【發明所屬之技術領域】本發明涉及一種場發射電子源及其製造方法，尤豆乎及一種奈米碳管場發射電子源及其製造方法。，、以【先前技術】奈米碳管（Carbon Nanotube, CNT)係一種新帮碏姑料，由日本研究人員njima於1991年發現，士主夂 "Helical Microtubules of Graphitic Carbon", S UUma 驗ure，νο1·354, p56⑽υ。奈米碳管具有憂^導電性能、良好之化學穩定性與大長徑比，且其g j 、，其钟電場愈二2 2發射真空電子源領域具有潛在之應材:二幾ί 最好之場發射，電壓（小於_)，可i輸極大之t密;有Ϊ304598 IX. Description of the Invention: [Technical Field] The present invention relates to a field emission electron source and a method of fabricating the same, and a nanocarbon tube field emission electron source and a method of fabricating the same. [Previous Technology] Carbon Nanotube (CNT) is a new kind of gangster discovered by Japanese researcher Njima in 1991. The Helical Microtubules of Graphitic Carbon", S UUma test Ure, νο1·354, p56(10)υ. The carbon nanotubes have the electrical conductivity, good chemical stability and large aspect ratio, and their gj, the clock electric field is more than 2 2. The vacuum electron source field has potential materials: two few ί. Field emission, voltage (less than _), can lose a very large t density;

Micro二e) 1 電工子顯微鏡（Scanning Electron ir τ 射電子顯微鏡（Transmission ElectronMicro II e) 1 Electrician microscope (Scanning Electron ir τ electron microscope (Transmission Electron)

MlCrosfpe)等設備之電子發射部件中。而先如之奈米碳管場發射電子一、體與作爲發射端之奈米碳管太、=括一導電基體上。目前，奈米碳管二4以2==導電基微鏡操縱合成好之太中j械方法係通過原子力顯導電基體上，此種方碳管用導電膠固定到另，通過該方法得不容易且效率低。係通過導電膠枯覆射電子源中奈米碳管電基體之電接觸狀離j土體上，使用時，奈米碳管與導射性能。〜、佳，不易充分發揮奈米碳管之場發 6 1304598MlCrosfpe) and other electronic emission components of the device. The first carbon nanotube field emits electrons, the body and the carbon nanotubes as the emitting end are too, = a conductive substrate. At present, the carbon nanotubes 2 are controlled by a 2==conducting micromirror. The method is based on the atomic force of the conductive substrate. This square carbon tube is fixed to the other by the conductive adhesive. And inefficient. The conductive carbon is used to cover the electron source in the electron source. The electrical contact of the carbon matrix is separated from the j soil. When used, the carbon nanotubes and the conductivity are used. ~, good, not easy to fully play the field of carbon nanotubes 6 1304598

原位生長法係先在導電基體上鑛上金屬铁氣相沈積或電弧放電等方法在導^基體上直接f 巧不米碳%*’此種方法雜操作簡單，奈祕管與導電 =之，接觸良好。然，奈米碳管與導電基體之結合能力 = 時奈米碳管易脫落或被電場力拔出，從而導子源損壞。而且，由於該方法無法控制奈米碳吕生長方向，故仍存在效率低且可控性差之問題。另，該方法之生產成本亦較高。【發明内容】替-有’有必要提供—種奈米碳管與導電基體結合 =未，s琢毛射電子源與一種生産效率高且可控性強之 Ik該奈米碳管場發射電子源之方法。 ” ϊίίίί管，射電子源’其包括:一導電基體， ΐίίίίΐ?—頂部；一奈米碳管，該奈米碳管-端盘電=頂;;，’另一端沿該導電基體頂部㈣ Αΐ，八中該不米奴官場發射電子源進一步包括一導雷金屬層形成於該奈轉管表面與該導電基體頂部表面。該奈米碳管在遠離導電基體之一端露頭。該導電基體之頂部爲錐形、圓臺形或柱形。該導電基體材料可選自鎢、金、鉬或.鉑。該導電金屬層材料爲金。該t米碳管之長度爲io〜100微米，直徑爲1〜50夺米。該導電金屬層之厚度爲1〜100夺米。、y、驟：-種奈米碳管場魏電切之製造綠，包括以下步共同想’使其相對之兩頂部 1304598 基體以間之電流並移除上述兩導電碳管==¾基體’以使至少-奈米米碳頂部表*舆奈兮4=1之後進—步包括以下=施加-電壓於射電子源’以使得該奈米碳管在遠離導電亦b 兮佘米碳管之溶液包括作爲主要>、款異丙醇與用作穩定劑之乙基纖維素。要，微米步驟㈠所述相對兩頂部之間之距離小於或等於] 之步包括以下步驟：監控奈米碳管組j 頂部^程’以較奈米碳管組裝於該兩減之導電基彳所述之監控方法包括I在兩導電基體所在之電路中聯一電阻；在該電阻兩端並聯一示波器。In-situ growth method is firstly carried out on the conductive substrate by means of metal-iron vapor deposition or arc discharge. The method is directly on the substrate, and the method is simple, and the method is simple. Good contact. However, the binding ability of the carbon nanotubes to the conductive substrate is such that the carbon nanotubes are easily detached or pulled out by the electric field force, and the source of the guide is damaged. Moreover, since this method cannot control the growth direction of the nanocarbon, there is still a problem of low efficiency and poor controllability. In addition, the production cost of the method is also high. SUMMARY OF THE INVENTION - There is a need to provide - a combination of carbon nanotubes and conductive matrix = no, s 琢琢射射电子与与与与与琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢琢Source method. ϊ ί ί , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The eighth source of the Emino slave field emission electron source further comprises a lead metal layer formed on the surface of the nematic tube and the top surface of the conductive substrate. The carbon nanotube is outcrop at one end away from the conductive substrate. The conductive base material may be selected from the group consisting of tungsten, gold, molybdenum or platinum. The conductive metal layer material is gold. The length of the t-meter carbon tube is io~100 micrometers, and the diameter is 1~50 wins the meter. The thickness of the conductive metal layer is 1~100 wins. y, s:: a kind of nano carbon tube field Wei electric cut manufacturing green, including the following steps together to think 'make the opposite two top 1304598 The substrate is interposed with current and the above two conductive carbon tubes are removed ==3⁄4 base body' so that at least the -nano carbon carbon top table *舆奈兮4=1 after the step includes the following = application-voltage to the electron-emitting source 'To make the carbon nanotubes dissolve away from the conductive and b-meter carbon tubes Including, as the main >, isopropyl alcohol and ethyl cellulose used as a stabilizer. The step of the micro-step (1) is that the distance between the two tops is less than or equal to the following steps: the monitoring of the carbon nanotubes The monitoring method of the group j top portion is assembled with the carbon nanotubes on the two reduced conductive groups. The monitoring method includes connecting a resistor in a circuit in which the two conductive substrates are located; and an oscilloscope is connected in parallel across the resistor.

相較于先前技術，奈米碳管場發射電子源結構表面之導電金屬層可有效增強奈米碳管與導電基體之間之附著力與降低奈米碳管與導電基體之間之接觸電阻，具有低電壓 =發Y大電流、電子發射穩定之優點，能充分發揮奈米碳 ¥之％發射性能。本發明奈米碳管場發射電子源之組袭方法一般只需要幾秒至幾十秒，耗時短，效率高。並且，整個组裝過程均可實現自動化操作與監測，生産效率高，可控性強。同時所需之生產設備簡單，因此生産成本低，適合進行大規模生産。【實施方式】下面將結合附圖對本發明作進一步之詳細說明。請參閱圖1與圖2，本發明實施例提供一種奈米碳管 1304598 場發射電子源10，該奈米碳管場發射電電細、-奈米碳管14與一導電金//:4= 體12由導電材料製成，如鎢、金、錮、鱗 1導電基該導電基體12具有一錐形頂部122，該錐形頂》二爲，: 之直徑範圍爲10〜1000微米。該奈米碳管14 22底邛Compared with the prior art, the conductive metal layer on the surface of the electron carbon source structure of the carbon nanotube field can effectively enhance the adhesion between the carbon nanotube and the conductive substrate and reduce the contact resistance between the carbon nanotube and the conductive substrate. It has the advantages of low voltage = large current of Y and stable electron emission, and can fully utilize the emission performance of nano carbon. The method of attacking the electron source of the carbon nanotube field of the present invention generally takes only a few seconds to several tens of seconds, which is short in time and high in efficiency. Moreover, the entire assembly process can achieve automatic operation and monitoring, with high production efficiency and strong controllability. At the same time, the production equipment required is simple, so the production cost is low and it is suitable for mass production. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. Referring to FIG. 1 and FIG. 2, an embodiment of the present invention provides a carbon nanotube 1304598 field emission electron source 10, the nano carbon tube field emission electric power fine, - carbon nanotube 14 and a conductive gold / /: 4 = The body 12 is made of a conductive material such as tungsten, gold, tantalum, scale 1 conductive base. The conductive substrate 12 has a tapered top portion 122 which has a diameter ranging from 10 to 1000 microns. The carbon nanotube 14 22 bottom 邛

與該導電基體12之頂部122電性連接，並通過ϋ42 附著於該導電基體12之頂部122上。該奈米锼二端144沿該導電基體12之頂部122向遠離導電^^第之方，伸。本實施例中，該奈米碳管14爲單土』米石厌了，優選爲多壁奈米碳管，其直徑範圍爲1〜如太二優選爲20奈米，長度範圍爲10〜1〇〇微米，優ϋ 該導電金制16 Μ料電絲12之獅官14之表面，用於增強奈米碳管14與導電基體12之^ 附著力與降低接觸電阻。該奈米碳管14遠離導電基體之第^端144延伸出該導電金屬層16，有利於充分發揮奈米碳管14之場發射性能。本實施例中，導電金屬層16 & 用具有較咼導電係數之金層，該金層之厚度爲1〜1〇〇太米，優選爲20奈米。 # 不本發明實施例十導電基體12還可依實際需要設計成其他形狀。該導電基體12之頂部122也可爲其他形狀，如圓臺形或細小之柱形，而不限於錐形。請參閱圖3,本發明實施例多個上述奈米碳管場發射電子源10可進一步組裝形成一奈米碳管場發射陣列2〇。該奈米碳管場發射陣列20包括一陰極電極層22與形成在該陰極電極層22表面之至少一個奈米碳管場發射電子源 10 ’該奈米碳管場發射電子源10之數量可依據實際需要而定。該奈米碳管場發射陣列20包括多個奈米碳管場發射電子源10時，位於每個奈米碳管場發射電子源10頂部之奈米碳管14基本平行且基本垂直於該陰極電極層22表面。本發明實施例中奈米碳管場發射電子源10可應用於 9 Ϊ304598 透射電子顯微鏡或其他場發射裝置中之 I琢嗌射顯不益或其他場發射電子源裝置中。管場與圖5 ’本發明實施例提供之一種奈米碳子源之制造方法，主要由以下步驟組成。 322盘22 =導電基體32與42，其分別具有錐形頂部定距^ #使該兩頂部322與422相對設置，並間隔開一間^量含ί米碳管之溶液50於該兩頂部322與 ]並使兩者能共同浸入該溶液50中。 (2)對該兩導電基體32與42施加—交流電壓6〇， f奈米碳官組裝於該兩頂部322與422之間。 *道中甘)切斷兩導電基體32與42之間之電流並移除上述兩導電基體相對兩頂部322與422之間之溶液5〇移除上述 a 分開上述兩相對之導電基體32與42，以使至少一不米碳管附著於至少一導電基體之頂部。表面ii)在之導電基體頂部表面舆奈米碳管表，ί二導電金屬層，形成該奈米碳管場發射電子源。人實施财’所狀導電絲32與42均由鶴或其 i雜H，其錐形頂部之底部直徑爲10〜1000微米。導電 =32與^也可以採用其他之導電材料製作，如金、姻、鉑荨，其自身形狀可依實際需要設計。頂部3 ^形狀，如圓臺_細也 = 4 322與422之端面爲平面時，最好使兩頂部微與之部分端面相對設置，如兩端面之邊緣相對設置。石夕頂部322與422之間之距離應根據所採用之奈米反吕長度加以設定，最好與奈米碳管長度相近，不宜太大， 1 否組裝。該間隔距離一般小於則微米，優選爲所述含奈米碳管之溶液50係以異丙醇爲主要溶過超聲震蕩之方法使奈米碳管在其中均勻分散而得到。爲 1304598 使該溶液5G穩定，還可加少液50還可採用其他方法製素。當然，溶或者增加分離财#^ ㈣、穩定劑管溶液爲f、，不必以具體實齡以^勻穩定之奈米碳量。-般，影響後期被組裝之奈米碳管數 =Γί5 2此，可根據實際需要調配溶㈣之H 根奈米奸，職儘餅低麵5G m ^The top portion 122 of the conductive substrate 12 is electrically connected to the top portion 122 of the conductive substrate 12 via the crucible 42. The nano-end 144 extends along the top 122 of the conductive substrate 12 away from the conductive surface. In the present embodiment, the carbon nanotube 14 is a single-soil "mite", preferably a multi-walled carbon nanotube, and has a diameter ranging from 1 to 20, preferably 20 nanometers, and a length ranging from 10 to 1. 〇〇Micron, ϋ The surface of the lion's 14 of the conductive gold 16 ray wire 12 is used to enhance the adhesion of the carbon nanotube 14 to the conductive substrate 12 and reduce the contact resistance. The carbon nanotube 14 extends away from the conductive end of the conductive substrate 144 to facilitate full play of the field emission properties of the carbon nanotube 14. In this embodiment, the conductive metal layer 16 & uses a gold layer having a relatively high conductivity, and the gold layer has a thickness of 1 to 1 Å, preferably 20 nm. The non-conductive substrate 12 of the embodiment of the present invention can also be designed into other shapes according to actual needs. The top portion 122 of the conductive substrate 12 can also have other shapes, such as a truncated cone shape or a thin cylindrical shape, without being limited to a taper. Referring to FIG. 3, in the embodiment of the present invention, a plurality of the above-mentioned carbon nanotube field emission electron sources 10 may be further assembled to form a carbon nanotube field emission array. The carbon nanotube field emission array 20 includes a cathode electrode layer 22 and at least one carbon nanotube field emission electron source 10 formed on the surface of the cathode electrode layer 22. The number of the carbon nanotube field emission electron source 10 can be According to actual needs. When the carbon nanotube field emission array 20 includes a plurality of carbon nanotube field emission electron sources 10, the carbon nanotubes 14 located at the top of each of the carbon nanotube field emission electron sources 10 are substantially parallel and substantially perpendicular to the cathode. The surface of the electrode layer 22. In the embodiment of the present invention, the carbon nanotube field emission electron source 10 can be applied to a 9 Ϊ 304598 transmission electron microscope or other field emission device, or a field emission electron source device. The tube field and the manufacturing method of the nanocarbon source provided by the embodiment of the present invention are mainly composed of the following steps. 322 disk 22 = conductive substrates 32 and 42, respectively having a tapered top distance ^ # such that the two top portions 322 and 422 are opposite each other, and are spaced apart by a solution 50 containing the carbon nanotubes at the top 322 And] and allow both to be immersed in the solution 50 together. (2) An alternating current voltage of 6 施加 is applied to the two conductive substrates 32 and 42, and the f nanocarbon is assembled between the two top portions 322 and 422. * Daozhong Gan) cuts the current between the two conductive substrates 32 and 42 and removes the solution between the two conductive substrates opposite the top portions 322 and 422. 5, removes the above a, separates the two opposite conductive substrates 32 and 42, The at least one carbon nanotube is attached to the top of the at least one electrically conductive substrate. The surface ii) is on the top surface of the conductive substrate, and the second conductive metal layer forms a field emission electron source of the carbon nanotube. The conductive wires 32 and 42 in the form of human beings are all made of crane or its hybrid H, and the bottom of the tapered top has a diameter of 10 to 1000 μm. Conductive = 32 and ^ can also be made of other conductive materials, such as gold, marriage, platinum crucible, its shape can be designed according to actual needs. The top 3 ^ shape, such as the round table _ thin also = 4 322 and 422 end faces are plane, it is best to make the two top micro and some of the end faces are opposite, such as the opposite ends of the two ends. The distance between the tops of 222 and 422 of Shixi should be set according to the length of the nanometer used. It is preferably close to the length of the carbon nanotubes. It should not be too large. 1 No assembly. The spacing distance is generally less than a micron. Preferably, the carbon nanotube-containing solution 50 is obtained by uniformly dispersing a carbon nanotube in a manner in which isopropanol is mainly dissolved by ultrasonic vibration. The solution 5300 is stabilized by 1304598, and the liquid 50 can be added. Other methods can also be used. Of course, dissolve or increase the separation of wealth #^ (4), the stabilizer tube solution is f, and it is not necessary to use a specific age to stabilize the nano carbon content. - Generally, the number of carbon nanotubes that are assembled in the later stage = Γί5 2 This can be adjusted according to the actual needs of the four (H) of the roots of the rice, the low-face 5G m ^

組褒之溶液50之濃度，在，度』制被 2 5G可由吸管、移液管、注射器或其他適宜 =並=導電基體頂部322與他之間。所施加之溶不且過多’以使該兩頂部322與422能共同浸入同一旦5〇即可。另，也可將兩頂部322與422直接浸入少里由k杯等容器盛放之溶液50中。該溶液50需移除時，八需同樣通過吸管、移液管、注射器或其他適宜之^置移 =艮卩可，當兩頂部322與422係直接浸入少量由燒杯等容态盛放之溶液50中時，只需將兩頂部322與422從溶液 50中移出即可。卜卜步驟（2)中，所述交流電壓之峰值可根據實際需要調節’本實施例交流電壓在10伏以内，頻率在丨·千至1〇兆赫^之間。本實施例主要係依據雙向電泳法原理：在交流，場中’溶液50中之奈米碳管向電場強度大之方向運動，最終運動到場強最大之兩頂部322與422相對之區域，並被吸附到該兩頂部322與422上。此後，奈米碳管依靠與該兩頂部322與422之凡德瓦爾力牢固吸附在頂部322與 422之表面上。一般，通電時間只需幾秒至幾十秒，因此該組裝方法耗時短，效率高。步驟（5)中，該導電金屬層之形成方法包括通過磁控賤射或電子束蒸發之方法形成一厚度爲1〜100奈米之導電 11 1304598 金屬層於該導電基體頂部122表面盥太其步驟:施加一遞增之j g以: =ί;:ΐ;ΐΓ原之奈米碳管發 =源更好地發揮該奈米碳管場發射 #，i而:統對整個奈米碳管組裝過程進行監 im?:?即時調整’提高成品率。例如，頂部322與422係處於斷路狀二斜未反&後該兩者係處於通路狀態，可方便二進行監測。在本實施例中，採用之監測方 ΐίϊ ft在圖5所示之電路中串聯一電阻（圖丨矣i皮器觀察_阻兩端之波形變化。當波形 ίί犬=表不不米碳管已經組裝到兩個頂部322與422 ^，這時就可以降壓斷電並移走液滴。當然，也可以採 ”他監測方法及設備進行，不必限於本實施例。丄ΐ個組裝過程均可實現自動化操作與監測’避 iti或+手絲作之偏差以及化學氣相沈積法中奈米碳 ^之生’提高生產效率，增強可控性，同時所而之ί產讀料’生產成本低，適合進行大規模生産。另’本發明實施例製造包括多個奈米碳管場發射電子 ί導2G之過財，可卿成有多 =。通過⑯加電齡該陰極電極層與另—可活動之導電 if展ίϊίΓ活動之導電基體頂部逐—靠近形成於陰極兮基體頂部’即可實現將奈米碳管分別組裝於該夕個導電基體上，具有操作簡單、高效，可控性強之優 12 1304598 點管被掃描電子顯微鏡照片可看出’奈米碳 J米碳管组裝於二騎其侧力有^向=力声可ϊϊϊϋίΐ管場發射電子源結構表面之導電金屬 =二官與導電基體之間之接觸電阻，電子發射穩定之優點，能充分發揮奈米碳ίίί 。本發明奈米碳管場發射電子源之組裝方法-般 :=„時短，效率高。並且，整個組ί ^所需之生產設備簡單，生産成本低，適合進行大二裎屮ίίΐ述，本發明確已符合發明專利之要件，遂依法 f 2以此限制本案之中請專利範圍。舉凡熟悉本宰二蓋=====所作之等效修飾或變化，皆“ 【圖式簡單說明】示意Ξ1爲本發明實施例之奈米碳管場發射電子源之立體圖2爲圖1之縱向剖視圖；奈米管料料切形成之法之明實㈣奈米碳管場魏電子源之製造方 ^ 5爲本發明實施例組裝奈米碳管場發射電子源之夏不忍圖；衣 13 1304598 圖6爲本發明實施例奈米碳管場發射電子源之掃描電子顯微鏡照片。【主要元件符號說明】奈米碳管場發射電子源 10 導電基體 12 ， 32 ， 42 頂部 122 ， 322 ， 422 奈米碳管 14 第一端 142 第二端 144 導電金屬層 16 陰極電極層 22 溶液 50The concentration of the solution 50 in the group is determined to be 2 5G by a pipette, pipette, syringe or other suitable = and = conductive substrate top 322 between him. The applied solution is not too much 'so that the two tops 322 and 422 can be immersed together in the same 5 Å. Alternatively, the two top portions 322 and 422 may be directly immersed in a solution 50 which is held in a container such as a k cup. When the solution 50 needs to be removed, the same needs to be carried out by a pipette, a pipette, a syringe or the like. When the two tops 322 and 422 are directly immersed in a small amount of a solution containing a cup or the like. In the middle of 50, it is only necessary to remove the two tops 322 and 422 from the solution 50. In the step (2), the peak value of the alternating voltage can be adjusted according to actual needs. The alternating voltage of the embodiment is within 10 volts, and the frequency is between 丨·th to 1 megahertz. This embodiment is mainly based on the principle of two-dimensional electrophoresis: in the alternating current field, the carbon nanotubes in the solution 50 move toward the direction of the electric field strength, and finally move to the area where the top portions 322 and 422 of the field strength are the largest, and It is adsorbed onto the two tops 322 and 422. Thereafter, the carbon nanotubes are firmly adsorbed on the surfaces of the top portions 322 and 422 by virtue of the van der Waals force of the two top portions 322 and 422. Generally, the power-on time is only a few seconds to several tens of seconds, so the assembly method is short in time and high in efficiency. In the step (5), the method for forming the conductive metal layer comprises forming a conductive layer 11 1304598 having a thickness of 1 to 100 nm by magnetron sputtering or electron beam evaporation on the surface of the top surface 122 of the conductive substrate. Step: Apply an incremental jg to: = ί;: ΐ; ΐΓ原之米碳管发=源 to better play the nano-carbon tube field launch #,i and: the whole nano-carbon tube assembly process Supervise im?:? Immediately adjust 'improve the yield. For example, the tops 322 and 422 are in a broken state, and the two are in a path state, which is convenient for monitoring. In this embodiment, the monitoring block ΐ ϊ ft is used in series with a resistor in the circuit shown in FIG. 5 (the waveform of the θ 皮观察 _ 阻阻。。。。。。当 = = = = = = = = = = It has been assembled to the two tops 322 and 422 ^, at which point it is possible to step down the power and remove the droplets. Of course, it can also be carried out by his monitoring method and equipment, not necessarily limited to this embodiment. Realize the operation and monitoring of 'avoidance of iti or + hand silk and the chemical carbon deposition method of nano-carbon generation' to improve production efficiency, enhance controllability, and at the same time, the production of reading materials 'low production cost It is suitable for large-scale production. In addition, the embodiment of the present invention manufactures a plurality of carbon nanotubes, and emits electrons, which can be more than 2%. The cathode electrode layer and the other are 16 years old. The movable conductive if exhibition ϊ ϊ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Excellent 12 1304598 points The tube is scanned by electron micrograph. It can be seen that the nano carbon J-meter carbon tube is assembled on the second side of the tube. The direction of the force is = 力力力 ϊϊϊϋ 导电 ΐ 发射发射发射发射发射发射发射发射发射发射发射发射导电导电导电导电导电导电导电导电导电 = = = = The contact resistance between the two, the advantages of electron emission stability, can fully utilize the nano carbon ίίί. The assembly method of the nano carbon tube field emission electron source of the present invention is as follows: = „short time, high efficiency. And, the entire group ί ^ required The production equipment is simple, the production cost is low, and it is suitable for the second generation of the invention. The invention has indeed met the requirements of the invention patent, and the scope of the patent is limited in this case according to the law. === Equivalent Modifications or Variations Made by "Simplified Description of the Drawings" FIG. 1 is a perspective view of a carbon nanotube field emission electron source according to an embodiment of the present invention. FIG. 2 is a longitudinal cross-sectional view of FIG. 1; The method of forming the cut-off method (4) The manufacturing method of the carbon source of the nano-carbon tube field Wei 5 is the summer of the embodiment of the invention for assembling the electron source of the carbon nanotube field; 9 13304598 FIG. 6 is an embodiment of the present invention Nano carbon tube field Scanning electron micrograph of the sub-source. [Main component symbol description] Carbon nanotube field emission electron source 10 Conductive substrate 12, 32, 42 Top 122, 322, 422 Carbon nanotube 14 First end 142 Second end 144 Conductive Metal layer 16 cathode electrode layer 22 solution 50

1414

Claims

13045981304598

十、申請專利範圍 1. 一種奈米碳管場發射電子源，其包括：一導電基體’該導電基體具有一頂部；一奈米碳管，該奈米碳管一端與該導電基體頂部電性連接，另一端沿該導電基體頂部方向向外延伸；言其改進在於，該奈米碳管場發射電子源進一步包括一 v電金屬層形成於該奈米碳管表面與該導電基體頂部面0 2. ϊΐ請專利範圍第1項所述之奈米碳管場發射電子源 9 該奈米碳管在遠離導電基體之一端露頭。 •复巧專利範圍第丨項所述之奈米碳管場發射電子源 4 I由導電基體之頂部爲錐形、圓臺形或柱形。 • ιΠΐ範圍第1項所述之奈米碳管場發射電子源 5電基體材料可選自鎢、金、鉬或鉑。 Ί月範圍第1項所述之奈米碳管場發射電子源 fi二中:該導電金屬層材料爲金。圍第1項所述之奈米碳管場發射電子源 ^米。該不米碳管之長度爲10〜100微米，直徑爲w 圍第1項所述之奈純管場發射電子源 8 ：，導電金屬層之厚度爲11〇〇奈米。驟：$米碳管場發射電子源之製造方法，包括以下$ 共同(、=ΐ供兩個相對之導電基體，使其相對之兩頂』入同—含絲碳管之溶液中； ^ 少-電壓於該兩導電基體之間n 厌S組裝至該相對之兩頂部之間； - 基體忑對間之糕並雜上述兩導1 (四）分開上述兩相對之導電基體，以使至少_ 15 1304598 碳管附著於至少一導電基體之頂部； (五）形成一導電金屬層於該導電基體頂部表面與奈米碳管表面，形成該奈米碳管場發射電子源。 τ 9·如申請專利範圍第8項所述之奈米碳管場發射電子源之製造方法’其中’在步驟（五）之後進一步包括以下步驟··施加一電壓於該奈米碳管場發射電子源，以使得該奈米碳管在遠離導電基體之一端露頭。 ’ ~ 10·如申請專利範圍第8項所述之奈米碳管場發射電子之製造方法，其中，步驟（一）所述之含奈米碳管之溶液包括作爲主要溶劑之異丙醇與用作穩定劑之乙基纖維素。、、 11. 如申請專利範圍第8項所述之奈米碳管場發 ;;造方法:其中’步驟㈠所述相對兩頂距離小於或等於10微米。 12. 如申請專利範圍第8至11任-項所述之夺平射電子源之製造方法，其中，步監控奈米碳管之組裝過程，以二，裝於該_對之導電基體頂部之間。卡反e組器之製造3軌其圍中第，米碳管場發射電子源體所在之電路中串聯-電阻，在該端 16X. Patent Application Range 1. A carbon nanotube field emission electron source, comprising: a conductive substrate 'the conductive substrate has a top portion; a carbon nanotube, one end of the carbon nanotube and the top of the conductive substrate Connecting, the other end extending outward in the direction of the top of the conductive substrate; the improvement is that the carbon nanotube field emission electron source further comprises a v-electro-metal layer formed on the surface of the carbon nanotube and the top surface of the conductive substrate. 2. The carbon nanotube field emission electron source described in item 1 of the patent scope is called. The carbon nanotube is outcrop at one end away from the conductive substrate. • The carbon nanotube field emission electron source 4 I described in the second paragraph of the patent patent is tapered, rounded or cylindrical at the top of the conductive substrate. • The carbon nanotube field emission electron source described in item 1 of the ιΠΐ range 5 The electrical matrix material may be selected from tungsten, gold, molybdenum or platinum. The carbon nanotube field emission electron source described in item 1 of the Haoyue range fi 2: The conductive metal layer material is gold. The electron source of the carbon nanotube field emitted in the first item is m. The length of the carbon nanotubes is 10 to 100 micrometers, and the diameter of the carbon nanotubes is 0. The thickness of the conductive metal layer is 11 nanometers. Step: The manufacturing method of the emission source of the $m carbon tube field includes the following $ common (, = ΐ for two opposite conductive substrates, so that the two tops are in the same - in the solution containing the carbon tube; ^ less - a voltage between the two conductive substrates is assembled between the two opposite tops; - a substrate between the two sides of the base and the two leads 1 (four) separate the two opposite conductive substrates to at least _ 15 1304598 A carbon tube is attached to the top of at least one of the conductive substrates; (5) forming a conductive metal layer on the top surface of the conductive substrate and the surface of the carbon nanotube to form a field emission electron source of the carbon nanotube. The method for manufacturing a carbon nanotube field emission electron source according to Item 8 of the patent scope, wherein the step (f) further comprises the following steps: applying a voltage to the carbon nanotube field to emit an electron source, so that The carbon nanotube is exposed at a position away from the one end of the conductive substrate. The manufacturing method of the carbon nanotube field emission electron according to the eighth aspect of the patent application, wherein the nanometer described in the step (1) Carbon tube solution The main solvent is isopropanol and ethyl cellulose used as a stabilizer., 11. The nanocarbon tube field according to item 8 of the patent application;; the method: wherein the two steps are as described in 'Step (1) The top distance is less than or equal to 10 micrometers. 12. The method for manufacturing a flattened electron source according to any one of claims 8 to 11, wherein the step of monitoring the assembly process of the carbon nanotubes is performed on the second _ Between the tops of the conductive substrates. The manufacture of the card anti-e-group device is three-way in the middle of the circuit, and the carbon-tube field emits a series-resistor in the circuit where the electron source body is located, at which end 16