TWI293578B - Nozzle cleaning apparatus and substrate processing apparatus - Google Patents

Nozzle cleaning apparatus and substrate processing apparatus Download PDF

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Publication number
TWI293578B
TWI293578B TW094101573A TW94101573A TWI293578B TW I293578 B TWI293578 B TW I293578B TW 094101573 A TW094101573 A TW 094101573A TW 94101573 A TW94101573 A TW 94101573A TW I293578 B TWI293578 B TW I293578B
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Taiwan
Prior art keywords
nozzle
cleaning
liquid
cleaning liquid
specific
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TW094101573A
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Chinese (zh)
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TW200534925A (en
Inventor
Yoshinori Takagi
Yasuhiro Kawaguchi
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Dainippon Screen Mfg
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Coating Apparatus (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

1293578 ， · 九、發明說明： 【發明所屬之技術領域】 •本發明係關於一種將噴出特定處理液之噴出噴嘴洗淨的 技術。 【先前技術】 眾所周知下述基板處理裳置，其於液晶用玻璃矩形基 板、半導體晶圓、薄膜液晶用可撓性基板、光罩用基板、 濾、色器用基板（以下，簡稱為「基板」）等之表面，㈣抗 蝕劑等處理液。於如此之基板處理裝置中，藉由自噴出噴 嘴喷出抗蝕劑液，於基板表面形成抗蝕劑液之塗佈膜。 圖18至圖20係階段性表示下述情形之概念圖：於將抗餘 劑液塗佈於基板之基板處理裝置中，由於重複塗佈處理從 而導致抗蝕劑液之附著物殘留於喷出噴嘴。圖18係於初始 狀態表示狹縫喷嘴1〇〇之前端部為正常狀態。又，圖19係 表示對於數十枚基板實施塗佈處理之狀態，圖2〇係表示對 • 於數百牧基板實施塗佈處理之狀態。即，於如此之基板處 理裝置中，若對於基板重複實施塗佈處理，則抗蝕劑液r 將逐漸殘留於噴口 101之周邊或狹縫噴嘴1〇〇之前端部側 面0 特別是，如圖19以及圖20所示，於使用狹縫喷嘴1〇〇實 施塗佈處理之基板處理裝置（隙縫塗佈機）中，若藉由於不 均一地附著有抗蝕劑液R之狀態下的狹縫喷嘴1〇〇實施塗佈 處理，則將會產生條紋狀之塗佈斑塊。故而，為穩定實施 塗佈處理，必須定期洗淨去除殘留於喷口 1〇1之周邊的抗 98458.doc 1293578 蝕劑液R。考慮到如此夕s Λ ^ ^ 里由’自先前則建議有實施噴嘴 洗淨處理之基板處理署，点丨丄』 ^ 处里展置，例如揭示於專利文獻1。 先前之基板處理裝詈，狄 '置，、具備噴出洗淨液之洗淨喷嘴， 於喷嘴洗淨處理中通常之手法為自該洗淨噴嘴，朝向噴出 喷嘴之前端部供給洗淨液。並且，為提高其洗淨效果，'業 者要求，增加洗淨液之徂 旦 狀之仏、、，口里’並且迅速吸引排出用於洗 淨之洗淨液。即，紫去1^ P苐者要求提兩吸引噴出喷嘴之前端部時 之吸引力。1293578, IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a technique for cleaning a discharge nozzle for ejecting a specific treatment liquid. [Prior Art] It is known that the substrate processing is performed on a glass rectangular substrate for liquid crystal, a semiconductor wafer, a flexible substrate for a thin film liquid crystal, a substrate for a photomask, and a substrate for a filter or color filter (hereinafter, simply referred to as a "substrate"). ), etc., (4) a treatment liquid such as a resist. In such a substrate processing apparatus, a resist liquid is ejected from a discharge nozzle to form a coating film of a resist liquid on the surface of the substrate. 18 to 20 are conceptual diagrams showing a situation in which a resist liquid is applied to a substrate processing apparatus of a substrate, and the adhesion of the resist liquid remains in the discharge due to repeated coating treatment. nozzle. Fig. 18 is a state in which the end portion of the slit nozzle 1 is in a normal state before the initial state. In addition, Fig. 19 shows a state in which a coating process is applied to tens of substrates, and Fig. 2 shows a state in which a coating process is performed on a plurality of substrates. That is, in such a substrate processing apparatus, when the coating process is repeatedly applied to the substrate, the resist liquid r gradually remains on the periphery of the nozzle 101 or the end side surface 0 of the slit nozzle 1 特别, in particular, as shown in the figure. 19 and FIG. 20, in the substrate processing apparatus (slot coater) which performs the coating process using the slit nozzle 1 ,, the slit in the state in which the resist liquid R adheres unevenly When the nozzle 1 is subjected to a coating treatment, stripe-like coated patches are generated. Therefore, in order to stably carry out the coating treatment, it is necessary to periodically remove and remove the anti-98458.doc 1293578 etchant liquid R remaining around the nozzle 1〇1. In the case of the above, s Λ ^ ^ is proposed by the substrate processing unit that has been subjected to nozzle cleaning treatment from the previous point, and is disclosed in Patent Document 1, for example. In the conventional substrate processing apparatus, a cleaning nozzle for discharging the cleaning liquid is provided, and in the nozzle cleaning process, a cleaning liquid is supplied from the cleaning nozzle to the end portion before the discharge nozzle. Further, in order to improve the cleaning effect, the company has demanded that the cleaning liquid be added to the sputum, and the mouth is quickly sucked and discharged. That is, the purple one is required to raise the attraction force when the two ends of the nozzle are sucked.

[專利文獻1 ]曰本專利特開平11 - 0 7 417 9號公報 [發明所欲解決之問題] 二而於先則之基板處理裝置中，存在如下問題：若增 大及引力貝1自喷Π至噴出喷嘴内所填充之抗餘劑液汉會 受到吸引從而被吸出。特別是’於抗餘劑液（處理液）為低 黏度之情形時，該問題更為顯著。 圖21係表示於抗蝕劑液汉被吸出之部分中混入有空氣之 狀L又，圖22係表示於抗蝕劑液R被吸出之部分中混入 有洗淨液“洗液LQ)之狀態。如此，於先前之基板處理裝 置中’若為提高洗淨力而增大吸引力，則由於洗淨後之喷 出噴嘴於長度方向成為不均一等之狀態惡化，將無法增加 吸引力，因而提高洗淨處理中之洗淨效果方面存在限度。 又’於先則之基板處理裝置中，存在如下問題：即使於 喷嘴洗淨處理結束之狀態，條紋狀附著物亦會殘留於喷出 喷嘴之前端部側面。圖23係表示於先前之基板處理裝置 中’於喷嘴洗淨處理後所發現之條紋狀附著物RL的圖。圖 98458.doc Ϊ293578 23所示之附著物RL係於狹縫喷嘴100之前端部側面之供給 有洗淨液範圍中最高位置附近，由於滞留有所溶解之抗敍 劑液與洗淨液的混合液等而得以形成者。如此之附著物 亦可使洗淨後之狹縫噴嘴100之狀態惡化。 本發明係鑒於上述課題而製成者，其目的在於提高噴出 噴嘴之洗淨處理中之洗淨效果。 【發明内容】[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 11- 0 7 417 9 (Problems to be Solved by the Invention) In the substrate processing apparatus of the prior art, there is a problem that if the increase and the attraction force are self-spraying The anti-reagent liquid filled in the ejection nozzle is attracted and sucked out. This problem is particularly remarkable when the anti-residue liquid (treatment liquid) is in a low viscosity state. Fig. 21 shows a state in which air is mixed in a portion where the resist liquid is sucked, and Fig. 22 shows a state in which the washing liquid "washing liquid LQ" is mixed in the portion where the resist liquid R is sucked. As described above, in the conventional substrate processing apparatus, if the suction force is increased to increase the cleaning power, the discharge nozzle after washing is deteriorated in a state in which the longitudinal direction is uneven, and the suction force cannot be increased. There is a limit in the cleaning effect in the cleaning process. In the substrate processing apparatus of the prior art, there is a problem in that even if the nozzle cleaning process is completed, the striped deposit remains in the ejection nozzle. Fig. 23 is a view showing a stripe-like deposit RL which is found after the nozzle cleaning process in the prior substrate processing apparatus. The attachment RL shown in Fig. 98458.doc Ϊ 293578 23 is attached to the slit nozzle. The supply of the side of the end portion of the front side of the 100 is formed in the vicinity of the highest position in the range of the cleaning liquid, and is formed by the mixture of the anti-study liquid and the cleaning liquid which are dissolved, and the like. Narrow The state of the slit nozzle 100 is deteriorated. The present invention has been made in view of the above problems, and an object thereof is to improve the washing effect in the washing process of the discharge nozzle.

為解決上述課題，請求項丨之發明係一種噴嘴洗淨裝 置，其特徵在於：其係將自設置於前端部之噴口喷出特定 處理液之喷出喷嘴加以洗淨者，其具備 朝向上述喷出喷嘴之前端部附近，自噴σ供給特定洗淨 液之洗淨液供給機構， 藉由吸引口吸引藉由上述洗淨液供給機構所供給之上述 特定洗淨液之吸引機構，且 以上述喷口 可大致成為上述料處理液之停滯點之 方式’調整上述吸引機構之吸引力。 又，請求項2之發明係與請求項以發明相關之喷嘴洗淨 裝置’其中進而具備遮蔽構件，上述遮蔽構件具有上述噴 出喷嘴之喷口較短方向寬度以上之厚度，且配置於上述喷 出喷嘴之喷口下方周圍，且 、 上述吸引機構之吸引口藉由白μ 由自上述遮斷構件之下方實施 吸引，從而調整上述喷出喰喈 喊 之吸引力 ®赁鳴之喷口周圍的上述吸引機構 又 請求項3之發明係與請求項2之發 明相關之喷嘴洗淨 98458.doc j293578 裝置，其中上述遮蔽構件 述r:供給機構所供給之二上 又’請求項4之發明係與請求項=下，。 請，其中上述吸引機構藉由自上述c賀嘴洗淨 方霄施吸引，從而調整上述噴 之贺之爾側 引機構之吸引力。 、之噴口周圍的上述吸 又，請求項5之發明係與請 裝置’其中上述吸引機構之…較嘴洗淨 構之喷口更接近配置於上述噴出喷^上迷洗淨液供給機 又’請求項6之發明係盥誥卡 裝置，其中自1置 > 、之發明相關之噴嘴洗淨In order to solve the problem, the invention of the present invention is directed to a nozzle cleaning device which is configured to discharge a discharge nozzle of a specific processing liquid from a nozzle provided at a tip end portion, and is provided to be sprayed toward the nozzle. A cleaning liquid supply mechanism that supplies a specific cleaning liquid from the ejection σ in the vicinity of the end portion before the discharge nozzle, and suctions the suction mechanism of the specific cleaning liquid supplied by the cleaning liquid supply mechanism through the suction port, and the discharge port It is possible to adjust the suction force of the above-mentioned suction mechanism in such a manner that it can substantially become a stagnation point of the above-mentioned material processing liquid. Further, the invention of claim 2, wherein the nozzle cleaning device according to the invention is further provided with a shielding member, wherein the shielding member has a thickness equal to or larger than a width of a nozzle of the discharge nozzle in a shorter direction, and is disposed in the discharge nozzle Around the nozzle, and the suction port of the suction mechanism is sucked by the lower side of the blocking member by the white μ, thereby adjusting the attraction of the discharge and the suction mechanism around the nozzle of the sounding The invention of claim 3 is directed to the nozzle cleaning 98458.doc j293578 device relating to the invention of claim 2, wherein the shielding member is described by r: the supply mechanism supplies the second and the invention item of claim 4 and the request item = ,. In this case, the attraction means adjusts the attraction of the above-mentioned suction side by means of suction from the above-mentioned c-washing side. The above-mentioned suction around the spout, the invention of claim 5 is related to the device 'where the suction mechanism is closer to the spout of the nozzle than the mouth of the nozzle, and the request is The invention of Item 6 is a Leica device in which the nozzle associated with the invention of 1 >

口，排出出噴嘴之前端部下方的排出 液，上述洗淨液供給機構所供給之上述特定J :，=項7之發明係與請求項6之 ▲置，其中進而具備配置於 km子 籲具有導向面之引導構件，上述導向面將辟=端部下方且 給機構所供給之上述特定洗淨液導向下方曰。逑冼淨液供 又，請求項8之發明係與請求項丨之發 =，其中進而具備調整上述洗淨 構= 先淨 定洗淨液之供給位置的調整機構。 《構中的上述特 又，請求項9之發明係與請求項8之發 裝置，其中上述調整機構具有特定厚度之分J物贺嘴洗淨 淨^置1 <發明相關之噴嘴洗 /衣、、上述噴出喷嘴…係延伸於特定方向之隙 98458.doc I293578 縫，曰、铨 進而具備使上述洗淨液供給機構沿著上述 移動之掃描機構。 寺疋方向 又，請求項II之發明係與請求項丨之發明相關 攻置，其中上述喷出喷嘴之喷口係延伸於特 縫， 〜乃同之隙 、，而上述洗淨液供給機構可大致同時供給上述特& 夜於知、跨上述喷出喷嘴之前端部中之上述特定方从< 體寬度上。 σ上的整 淨：置請ίΓ之發明係與請求項1之發明相關之喷嘴洗 :裝置’其中進而具備將特定氣體供給至上述噴 刖端部的氣體供給機構，且藉由來自 、 L 4 褙田术目上述軋體供給機構之 上述特定氣體之供給位置設於f自 來自上述洗淨液供給機構之 上述特疋洗淨液之供給位置之上方。 又，凊求項13之發明係一種嘻喈 於·甘及… 種嘴％ /先淨裝置，其特徵在 ;·八係將自設置於前端部之喷 噴嘴加以洗淨者，其具# f噴出特-處理液之噴出 朝向上述喷出喷嘴之前端部附近 液供給機構， #疋洗#液之洗淨 吸引藉由上述洗淨液供給機構 的吸引機構，X 〈上迷特疋洗淨液 上述洗淨液供給機構具備 複數個朝向上述喷出喷嘴 之洗淨喷嘴， 卩噴出上述特定洗淨液 並且來自上述複數個洗淨噴 、十、驻—冰、容、广々糾从 、 至^、一個洗淨喷嘴之上 述特疋洗淨液之供給位置以對於 木自其他洗淨噴嘴之上述 98458.doc 10· 1293578 特定洗淨液之供給位置，於高度方向上相異之方式得以配 置。 又，請求項14之發明係一種基板處理裝置，其特徵在 於··其係於基板上塗佈特定處理液者，且具備 保持基板之保持機構， 自設置於前端部之噴口喷出特定處理液至保持於上述保 持機構之基板表面的噴出喷嘴，以及 ’'The outlet discharges the discharge liquid below the end portion of the nozzle, and the invention of the specific J:, = item 7 supplied by the cleaning liquid supply means is set to the request item 6, and further includes the arrangement of the The guiding member of the guiding surface, the guiding surface guiding the specific cleaning liquid supplied under the end portion and guiding the mechanism to the lower side. Further, the invention of claim 8 and the request item = are further included, and further comprising an adjustment mechanism for adjusting the supply position of the cleaning unit = the first cleaning liquid. The invention of claim 9 is the device of claim 9, wherein the adjustment mechanism has a specific thickness, and the nozzle is washed/dressed in accordance with the invention. The discharge nozzles are slits 98458.doc I293578 extending in a specific direction, and the crucibles and the crucibles further include a scanning mechanism for moving the cleaning liquid supply mechanism along the movement. In the direction of the temple, the invention of claim II is related to the invention of the claim item, wherein the nozzle of the discharge nozzle extends over the special slit, and the cleaning liquid supply mechanism can be substantially At the same time, the above-mentioned special & night is known, and the specific square in the front end of the ejection nozzle is above the width of the body. The cleaning of σ: The invention of the invention relates to the nozzle washing of the invention of claim 1, wherein the apparatus further includes a gas supply mechanism for supplying a specific gas to the squirt end, and by, from, L 4 The supply position of the specific gas in the above-described rolling body supply means is set to be higher than the supply position of the above-mentioned special cleaning liquid from the cleaning liquid supply means. Further, the invention of the item 13 is a type of mouth/first cleaning device, which is characterized in that the eight systems are cleaned from the spray nozzle provided at the front end portion, and have a #f The discharge of the discharge special-treatment liquid is directed toward the liquid supply mechanism near the end of the discharge nozzle, and the suction of the #疋洗# liquid is sucked by the suction mechanism of the cleaning liquid supply mechanism, and X is a special cleaning solution. The cleaning liquid supply mechanism includes a plurality of cleaning nozzles that face the discharge nozzles, and ejects the specific cleaning liquid from the plurality of cleaning sprays, ten, station-ice, volume, and wide-ranging corrections, to ^ The supply position of the above-mentioned special cleaning liquid of one washing nozzle is arranged in such a manner that the supply position of the specific washing liquid of the above-mentioned 98458.doc 10· 1293578 of the other washing nozzles is different in the height direction. Further, the invention of claim 14 is a substrate processing apparatus which is characterized in that a specific processing liquid is applied to a substrate, and a holding mechanism for holding the substrate is provided, and a specific processing liquid is ejected from a nozzle provided at the tip end portion. a discharge nozzle that is held on the surface of the substrate of the above holding mechanism, and ''

，且 給特疋洗淨液之洗淨 洗淨上述喷出噴嘴之喷嘴洗淨裝置 上述喷嘴洗淨裝置具備 朝向上述噴出噴嘴之前端部附近供 液供給機構， 的吸引機構 並以上述喷口周圍可大较 之方々坰敕 為上述特定處理液的停、、帶點 之方式，调整上述吸引機構之吸引力。 ^滯點 又，請求項15之發明係—種基 於··其係於基板上塗佈# 处漩置，其特徵在 ㈣且4 佈特疋處理液者’且具備 保持基板之保持機構， 自設置於前端部之 持機構之基板表面的噴出噴嘴特理液至保持於上述保 洗淨上述噴出噴 上述嘴嘴洗淨衷置具^ ^置，立 朝向上述噴出噴 液供給機構，、 4附近供給特定洗淨液之洗淨 98458.doc 1293578 的==構由上述洗淨液供給機構所供给之上述特定洗淨液 上述洗淨液供給機構具備 複數個朝向上述喷出噴嘴 之洗淨噴嘴， a p嘴出上迷特定洗淨液 、並且來自上述複數個洗淨噴嘴中至少—個洗淨上 ^特定洗淨液之供給位置以對於來自其他洗淨噴嘴之上述 置。 於阿度方向上相異之方式得以配 [發明之效果] 於請求項1至12以及14之發明中，可藉由以噴口周圍大 :成為特定處理液之停滯點之方式調整吸引機構 2 =由吸引迅速排出洗淨液與污染物，並^制 口吸出喷出喷嘴内之處理液。 、 於明求項2之發明中’進而具備遮蔽構件，並且吸 構之吸引口自遮斷構件下方實施吸引，藉此調整噴出喷嘴 :喷口周圍的吸引機構之吸引力，從而由此可易於實現笋 ’項1之發明’而上述遮蔽構件係具有噴出噴嘴之喷口^ 較短方向窗庚μ e A ^ 周圍者。予度，且配置於噴出喷嘴之喷口下方 於：求項3之發明中’可藉由具有導向面，進而迅速排 出洗淨液’上述導向面係將藉由洗淨液供給 特定洗淨液導向下方者。 、、、、D之 ;月求項4之發明中，藉由自噴出喷嘴之前端部側方實 98458.doc 1293578 施吸引，從而調整喷出噴嘴之喷口周圍的吸引機構之吸引 力，藉此可易於實現請求項1之發明。 % 於請求項6之發明中，由於自設置於喷出喷嘴之前端部 下方的排出口，排出藉由洗淨液供給機構所供給之特定洗 ，淨液，藉此可排出洗淨液而並非僅依賴於吸引機構，因此 可採用較小容量機構作為吸引機構。 於請求項7之發明中，進而具備配置於噴出喷嘴之前端 g 部下方且具有導向面，藉此可自排出口有效排出洗淨液， 上述導向面係將藉由洗淨液供給機構所供給之上述特定洗 淨液導向下方者。 於請求項8之發明中，可藉由進而具備調整來自洗淨液 供給機構之特定洗淨液之供給位置之調整機構，並根據處 理液之附著狀況，靈活調整洗淨之位置。 於請求項9之發明中，藉由調整機構為具有特定厚度之 分隔物，從而可易於實現請求項8之發明。 φ 於請求項10之發明中，可藉由噴出噴嘴之喷口係延伸於 特定方向之隙縫，且進而具備使洗淨液供給機構沿著特定 方向移動之掃描機構，實現裝置整體之小型化。 於請求項11之發明中，可藉由洗淨液供給機構可大致同 時供給特定洗淨液於橫跨喷出喷嘴之前端部中之特定方向 全部寬度，從而縮短喷嘴洗淨所需之時間。 於請求項12之發明中，具備將特定氣體供給至喷出喷嘴 之前端部的氣體供給機構，且使來自氣體供給機構之特定 氣體之供給位置位於來自洗淨液供給機構之特定洗淨液之 98458.doc 13 ⑧ Ϊ293578 供給位置之上方，藉此可促進乾燥洗淨液。 „、於請求項u以及15之發明中，藉由複數個洗淨喷嘴令至 乂個洗甲噴嘴之特定洗淨液之供給位置以對於其他洗淨 =之特定洗淨液之供給位置，於高度方向上相異之方式 而侍以配置’可防止條紋狀附著物殘留於噴出噴嘴。從： 可提高洗淨效果。 < 【實施方式】 以下’就本發明之較好的實施形態，—面參照附圖 詳細說明。 < 1 ·第一實施形態> 圖1係表示本發明之基板處理裝置1的立體圖。又，圖2 係表示基板處理裝置i之塗佈處理之主要構成的側視圖。θ 再者，圖丨中為方便圖示以及說明，定義為2軸方向表示 垂直方向’ ΧΥ平面表示水平面，但該等僅是為把握位置 關係而方便定義者，並非限定以下說明之各方向^關於下 述圖式亦為相同。 基板處理裝置1大致區分為本體2與控制部8，並將用以 製造液晶顯示裝置之晝面面板的矩形玻璃基板作為被處理 基板（以下，只稱為「基板」）9〇，於用以選擇性蝕刻形成 於基板90表面之電極層等的微影製程中，作為於基板卯表 面塗佈作為處理液之抗蝕劑液的塗佈處理裝置而構成。因 而，於本實施形態中，狹縫喷嘴41可喷出抗蝕劑液。再 者’基板處理裝置!亦可變形利用作為不僅將處理液塗佈 於液晶顯示裝置用之玻璃基板，通常亦將處理液塗佈於平 98458.doc -14- 1293578 板顯示器用之各種基板的裝置。 本體2具備平臺3，該平臺3係起作用作為用以載置並保 ， 持基板90之保持台，並且亦起作用作為附屬之各機構之基 • 台。平臺3係具有長方體形狀的例如一體之石製，其上面 - (保持面30)以及側面加工為平坦面。 平臺3上面形成水平面，成為基板9〇之保持面3〇。於保 持面30上分佈形成有並未圖示之多數真空吸附口，於基板 參 處理裝置1上處理基板90之期間藉由吸附基板9〇，將基板 90保持於特定水平位置。又，於保持面3〇空開適宜間隔設 有藉由並未圖示之驅動機構而上下自由升降之複數個起模 頂柃LP。起模頂桿lp用於卸除基板9〇時推上基板9〇。 於保持面30中隔著基板9〇之保持區（保持基板9〇之區域） 之兩端部，固定設置有一對平行延伸於大致水平方向之移 動軌道31。移動執道31與固定設置於架橋構造4之兩端部 取下方之並未圖示之支持組塊共同構成引導架橋構造4之 _移動（將移動方向規定為特定方向），且將架橋構造4支持於 保持面30上方的線性導軌。 於平臺3之上方，設置有自該平臺3之兩側部分大致水平 木叹的木橋構造4。架橋構造4主要包含例如將碳纖維加強 ί曰作為月料之噴嘴支持部4G與支持其兩端之升降機構 43 ' 44 〇 於噴嘴支持部40安裝有狹縫喷嘴41。圖U，於向γ轴方 向具f長度方向之狹縫噴嘴41連接有抗姓劑供給機構6(圖 2)、亥抗蝕劑供給機構6包含將抗蝕劑液供給至狹縫喷嘴 98458.doc 15 1293578 41之配管或抗蝕劑用泵等。藉由一面掃描基板9〇表面，— 面將藉由抗钕劑用泵所供給之抗㈣液噴出至基板％表面 *之特疋區域（以下，稱為「抗蝕劑塗佈區域」。），狹縫噴嘴 • 將杬蝕剡液塗佈於基板9〇。此處，所謂抗蝕劑塗佈區 '域，其係指基板90表面中將要塗佈抗姓劑液之區域，通常 係自基板9G之全面積除去沿著端緣之特定寬度區域 域。 • 升降機構43、44係於狹縫噴嘴41之兩側分開，藉由噴嘴 支持部40與狹縫噴嘴41連結。升降機構43、44主要包含 AC伺服馬達43a、44a以及並未圖示之圓頭螺检，並根據來 自控制部8之控制信號生成架橋構造4之升降驅動力。藉 此，升降機構43、44使狹縫噴嘴辦移升降。又，升降^ 構43、44亦可使用於調整狹縫喷嘴41在^平面内的欢And a nozzle cleaning device for cleaning and cleaning the special cleaning solution, wherein the nozzle cleaning device includes a suction mechanism that faces the liquid supply mechanism in the vicinity of the end portion of the discharge nozzle, and is surrounded by the nozzle. The larger side is to adjust the attraction of the above-mentioned suction mechanism in such a manner that the specific treatment liquid is stopped and brought to a point. In addition, the invention of claim 15 is based on the fact that it is placed on the substrate at the coating #, which is characterized by (4) and 4 bucking treatment liquids, and has a holding mechanism for holding the substrate, The discharge nozzle special liquid provided on the surface of the substrate of the holding mechanism at the front end portion is held in the cleaning and the discharge nozzle is disposed in the nozzle, and is disposed toward the discharge liquid supply mechanism, 4 The cleaning of the supply of the specific cleaning liquid 98458.doc 1293578 == The specific cleaning liquid supplied from the cleaning liquid supply means. The cleaning liquid supply means includes a plurality of cleaning nozzles facing the discharge nozzles. The ap nozzle is provided with a specific cleaning liquid, and at least one of the plurality of cleaning nozzles is supplied with the cleaning liquid to supply the cleaning liquid to the other cleaning nozzle. In the inventions of claims 1 to 12 and 14, the suction mechanism 2 can be adjusted in such a manner that the circumference of the nozzle is large: it becomes a stagnation point of a specific treatment liquid. The cleaning liquid and the contaminant are quickly discharged by the suction, and the treatment liquid in the ejection nozzle is sucked out by the mouth. In the invention of the invention of claim 2, the shielding member is further provided, and the suction port of the suction is sucked from below the blocking member, thereby adjusting the suction nozzle: the attraction force of the suction mechanism around the nozzle, thereby making it easy to realize The invention of the 'Section 1' of the bamboo shoots and the above-mentioned shielding member has a nozzle for ejecting the nozzle ^ a shorter direction window Geng μ e A ^ around. In the invention of claim 3, in the invention of claim 3, "the cleaning surface can be quickly discharged by having a guiding surface", and the guiding surface is guided by the cleaning liquid to the specific cleaning liquid. Below. In the invention of the fourth item, the attraction of the suction mechanism around the nozzle of the discharge nozzle is adjusted by suctioning the end side of the nozzle before the nozzle is 98458.doc 1293578. The invention of claim 1 can be easily implemented. In the invention of claim 6, the discharge liquid is discharged by the cleaning liquid supply means by the discharge port provided below the end portion before the discharge nozzle, whereby the cleaning liquid can be discharged instead of It relies solely on the attraction mechanism, so a smaller capacity mechanism can be employed as the attraction mechanism. Further, in the invention of claim 7, further comprising a guide surface disposed below the front end g of the discharge nozzle, whereby the cleaning liquid can be efficiently discharged from the discharge port, and the guide surface is supplied by the cleaning liquid supply mechanism The above specific cleaning liquid is directed to the lower side. In the invention of claim 8, the adjustment mechanism for adjusting the supply position of the specific cleaning liquid from the cleaning liquid supply means can be further provided, and the position of the cleaning can be flexibly adjusted according to the adhesion state of the treatment liquid. In the invention of claim 9, the invention of claim 8 can be easily realized by adjusting the mechanism to a separator having a specific thickness. According to the invention of claim 10, the nozzle of the discharge nozzle extends in a slit in a specific direction, and further includes a scanning mechanism for moving the cleaning liquid supply mechanism in a specific direction, thereby miniaturizing the entire apparatus. According to the invention of claim 11, the cleaning liquid supply means can supply substantially the entire width of the specific cleaning liquid in a specific direction in the end portion before the discharge nozzle, thereby shortening the time required for the nozzle to be washed. According to the invention of claim 12, the gas supply means for supplying the specific gas to the end portion before the discharge nozzle is provided, and the supply position of the specific gas from the gas supply means is located at the specific cleaning liquid from the cleaning liquid supply means. 98458.doc 13 8 Ϊ 293578 Above the supply position, which promotes the drying of the cleaning solution. In the inventions of the claims u and 15, the supply position of the specific cleaning liquid to the other washing nozzles by the plurality of washing nozzles is the supply position of the specific cleaning liquid for the other washings. In the case where the height direction is different, the arrangement is arranged to prevent the striped deposit from remaining in the discharge nozzle. From: The cleaning effect can be improved. [Embodiment] Hereinafter, a preferred embodiment of the present invention, 1 is a perspective view showing a substrate processing apparatus 1 of the present invention. Fig. 2 is a side view showing a main configuration of a coating processing of the substrate processing apparatus i. View. θ In addition, in the figure, for convenience of illustration and description, it is defined that the two-axis direction indicates the vertical direction. The ΧΥ plane indicates the horizontal plane. However, these are only convenient for defining the positional relationship, and are not limited to the following descriptions. The direction of the substrate is the same as that of the following drawings. The substrate processing apparatus 1 is roughly divided into the main body 2 and the control unit 8, and the rectangular glass substrate for manufacturing the kneading panel of the liquid crystal display device is treated. A substrate (hereinafter, simply referred to as a "substrate") is used as a resist liquid for coating a surface of a substrate on a surface of a substrate for selectively etching an electrode layer formed on the surface of the substrate 90. The coating processing device is configured. Therefore, in the present embodiment, the slit nozzle 41 can eject the resist liquid. Furthermore, the 'substrate processing apparatus can be modified to apply not only the processing liquid to the glass substrate for the liquid crystal display device, but also the processing liquid is usually applied to various substrates for the flat display of the flat 98458.doc -14-1293578. Device. The main body 2 is provided with a platform 3 which functions as a holding table for holding and holding the substrate 90, and also functions as a base for each of the attached mechanisms. The platform 3 is made of, for example, an integral stone having a rectangular parallelepiped shape, and the upper surface (the holding surface 30) and the side surface are processed into a flat surface. A flat surface is formed on the upper surface of the platform 3 to become a holding surface 3 of the substrate 9A. A plurality of vacuum suction ports (not shown) are formed on the holding surface 30, and the substrate 90 is held at a specific horizontal position by the adsorption substrate 9 while the substrate 90 is being processed on the substrate processing apparatus 1. Further, a plurality of die top cymbals LP which are vertically movable up and down by a drive mechanism (not shown) are provided at a suitable interval in the holding surface 3. The ejector pin lp is used to push up the substrate 9 卸 when the substrate 9 is removed. A pair of moving rails 31 extending in parallel in a substantially horizontal direction are fixedly provided at both end portions of the holding surface 30 via the holding region of the substrate 9 (the region where the substrate 9 is held). The movement lane 31 and the support block (not shown) fixedly disposed at the both ends of the bridge structure 4 together constitute a movement of the guide bridge structure 4 (the movement direction is defined as a specific direction), and the bridge structure 4 is Supports the linear guide above the retaining surface 30. Above the platform 3, a wooden bridge structure 4 is provided which is substantially horizontally slanted from the sides of the platform 3. The bridge structure 4 mainly includes, for example, a nozzle support portion 4G that uses carbon fiber reinforcement as a moon material, and a lifting mechanism 43' 44 that supports both ends thereof. The nozzle support portion 40 is attached with a slit nozzle 41. Figure U, the slit nozzle 41 having a length direction f in the γ-axis direction is connected to the anti-surname supply mechanism 6 (Fig. 2), and the resist supply mechanism 6 includes supplying the resist liquid to the slit nozzle 98458. Doc 15 1293578 41 for piping or resist pumps. By scanning the surface of the substrate 9 on one side, the anti-(4) liquid supplied from the anti-caries pump is sprayed onto a special area of the substrate % surface (hereinafter referred to as a "resist-coated area"). , slit nozzle • Apply the etched sputum to the substrate 9〇. Here, the term "resist coating region" refers to a region of the surface of the substrate 90 where the anti-surname liquid is to be applied, and is usually removed from the entire area of the substrate 9G by a specific width region along the edge. The elevating mechanisms 43, 44 are separated on both sides of the slit nozzle 41, and are coupled to the slit nozzle 41 by the nozzle support portion 40. The elevating mechanisms 43 and 44 mainly include AC servo motors 43a and 44a and a screw head screw not shown, and generate a lifting/lowering driving force of the bridge structure 4 based on a control signal from the control unit 8. Thereby, the elevating mechanisms 43, 44 move the slit nozzle up and down. Moreover, the lifting and lowering structures 43, 44 can also be used to adjust the opening of the slit nozzle 41 in the plane

於架橋構造4之兩端部，沿著平臺3之兩側緣側分別固定 :置有-對AC空心線性馬達(以下，簡稱為「線性馬 」)50、51，上述AC空心線性馬達50分別具備固定子 (疋子)50a與移動子5〇b以及固定子％與移動子川。又， 造:之兩端部，分別固定設置有分別具有定標部 性=之線性譯碼器52、53。線性譯物2、5獅 = =Γ。主要由該等線性馬達5❹、咖 構、^導 機構5，該移動機構5係用於將架橋 構’導於移動軌道31且移動於平 根據來自線性譯碼器52、53之檢測結果_線^^= 98458.doc -16- 1293578 動作，從而控制平臺3上之架橋構造4之移動，即控制狹縫 噴嘴41之基板9〇之掃描。 • 本體2之保持面3〇中，於保持區（-X)方向側設置有開口 ，· 32。開口 32與狹縫喷嘴41相同，於丫軸方向具有長度方 - 向，且該長度方向之長度與狹縫噴嘴41之長度方向長度大 致相同。又，於開口32下方之本體2内部，設置有喷嘴初 始化機構7。噴嘴初始化機構7使用於預備處理（下述），上 _ 述預備處理係於將抗蝕劑液塗佈至基板90之處理（以下， 稱為「本塗佈處理」）前實行。 設置於開口 32内之噴嘴初始化機構7具備預備塗佈機構 73。預備塗佈機構73具備生成旋轉驅動力之旋轉機構 730 ’藉由旋轉機構73〇而旋轉之滾筒73ι，將滾筒731儲存 於内部之大致箱狀框體732以及清除滾筒73丨之附著物的脫 水葉片733。 滾筒731以自框體732之上面開口部露出一部分之方式而 _ 配置，其圓筒侧面為塗佈有抗蝕劑液之塗佈面。基板處理 裝置1於預備塗佈處理中，自狹縫喷嘴41喷出抗蝕劑液至 滾筒73 1。再者，所謂預備塗佈處理係指下述處理：於正 式塗佈處理前，藉由自移動至滾筒73丨上方之狹縫喷嘴4 i 喷出少量抗蝕劑液，將抗蝕劑液預備性塗佈於滾筒73 1。 本實施形態中之基板處理裝置1係藉由預備塗佈處理，使 狹縫喷嘴41之狀態於γ軸方向均一化。 滾筒73 1之塗佈面可於框體732内部下方中浸沒於蓄積之 洗淨液。即，於預備塗佈處理中塗佈有抗蝕劑液之塗佈面 98458.doc 17 1293578 备 藉由旋轉機構，移動至下方，並藉由洗淨液而得以洗 淨。又，於洗淨後附著於自洗淨液取出之塗佈面之污毕物 藉由脫水葉片733得以清除。如此方式，於滾筒731旋轉一 圈期間塗佈面可恢復為清潔狀態，故於藉由狹縫噴嘴41實 施預備塗佈處理時，將不會污染狹縫喷嘴41。 、 又1嘴初始化機構7具傷喷嘴洗淨機構7〇。圖3係表示 喷嘴洗淨機構7〇之構成的圖。噴嘴洗淨㈣ 給機構71、吸引機構72、洗淨部74、洗淨液供給機構乃以 及驅動機構76 ’且其係主要實施上述噴嘴洗淨處理之機 構。再者，雖然圖3中省略圖示，但氣體供給機構71、吸 引機構72、洗淨液供給機構乃以及驅動機構％係以可發送 接收信號之狀態分別連接於控制部8，且該等各機構藉由 來自控制部8之控制信號而得以控制。 氣體供給機構71係介以供給配管將氮氣體自並未圖示之 筒罐供給至洗淨部74之機構。供給至洗淨㈣之氮氣體自 氣體喷嘴7_向特定方向噴出（詳細後述）。再者，本實施 形態中之基板處理梦署T s0 m , 1置雖：、、、、使用有氮氣體作為惰性 體，但惰性氣體並非限定於氮氣體。又，如若係乾淨氣 體，即使空氣亦可使用(I缩空氣：經過加壓之空氣)。 吸引機構72係介以廢棄配管自設置於洗淨部74之吸？| 口 :_)，吸引洗淨液或藉由洗淨液得以去除之抗姓劑液 寻之機構。再者’作為吸引機構72，通常可採 所周知之機構。例如，介叮及士 ΤΛ ^ 亦可係使用真空產生裝置或>1縮機 吸引之機構’料係包含吸引泵與氣液分離BOX之機構 98458.doc -18- 1293578 等。又，例如，只要可獲得所需之用力，亦可使用設置於 工廠内之排氣設備。 ， 洗淨部74主要包含基座74〇、分隔物741、喷出部742、 ,導向組塊743以及支持構件744,且具有下述功能：於喷嘴 洗淨處理中，洗淨去除由於重複正式塗佈處理而附著於狹 縫贺嘴41之前端部側面的抗钱劑液。 作為洗淨部74之各構成之基台而發揮作用的基座74〇連 •接於驅動機構76，並可藉由驅動機構％往返移動於γ軸方 向0 ▲分隔物74丨係具有特定厚度之板狀構件，其以可裝卸 態***至基座740與喷出部742之間。於本實施形態中， P«g物741藉由自基座740之後面朝向噴出部742***之螺 而得以固定，且可藉由鬆開該螺釘而得以拆卸。 /、 如此，藉由將配置於基座740與噴出部742之間之分隔 741 ’適宜交換為厚度不同者，可調整喷出部742之Z軸 向位置。如下所述，於噴出部742之特定位置設置有洗 喷嘴750,而調整噴出部742之2軸方向位置則相當於調 洗=噴嘴750之高度位置（z軸方向之位置）。故而，本實 形態中之噴嘴洗淨機構7G可將藉由洗淨液供給機構乃所^ 給之洗淨液之供給位置調整為冗軸方向。 圖4係喷出部742之對向面7仏的正視圖。喷出部冲 以错由特定位置關係配置氣財嘴7触及洗淨噴嘴乃 ::而定位的構件。藉此’決定氣體喷嘴71〇之氮氣體: U位置以及洗淨噴嘴75G之洗淨液之供給位置。再者 98458.docThe two ends of the bridge structure 4 are respectively fixed along the side edges of the platform 3: a pair of AC hollow linear motors (hereinafter, simply referred to as "linear horses") 50, 51, and the above-mentioned AC hollow linear motors 50 are respectively respectively It has a fixed child (scorpion) 50a and a mobile child 5〇b, and a fixed child% and a mobile child. Further, linear decoders 52 and 53 each having a scaling portion = are fixedly provided at both ends of the frame. Linear translation 2, 5 lions = = Γ. Mainly by the linear motor 5, the structure, and the guiding mechanism 5, the moving mechanism 5 is used to guide the bridge structure to the moving track 31 and to move to the flat according to the detection result from the linear decoders 52, 53. ^^= 98458.doc -16- 1293578 Act to control the movement of the bridge structure 4 on the platform 3, i.e., to control the scanning of the substrate 9 of the slit nozzle 41. • In the holding surface 3 of the main body 2, an opening is provided on the side of the holding area (-X). Similarly to the slit nozzle 41, the opening 32 has a length direction in the z-axis direction, and the length in the longitudinal direction is substantially the same as the length in the longitudinal direction of the slit nozzle 41. Further, inside the body 2 below the opening 32, a nozzle initializing mechanism 7 is provided. The nozzle initializing mechanism 7 is used for preparatory processing (described below), and the preparatory processing is performed before the processing of applying the resist liquid to the substrate 90 (hereinafter referred to as "this coating processing"). The nozzle initializing mechanism 7 provided in the opening 32 is provided with a preliminary coating mechanism 73. The preliminary coating mechanism 73 includes a rotating mechanism 730' that generates a rotational driving force, and a roller 731 that is rotated by the rotating mechanism 73, and the dehydration of the deposit of the substantially box-shaped casing 732 and the cleaning roller 73 of the drum 731. Blade 733. The drum 731 is disposed so as to be partially exposed from the upper opening of the casing 732, and the cylindrical side surface is a coated surface coated with a resist liquid. In the preliminary coating process, the substrate processing apparatus 1 ejects the resist liquid from the slit nozzle 41 to the drum 73 1 . In addition, the pre-coating treatment refers to a process of preparing a resist liquid by ejecting a small amount of resist liquid from a slit nozzle 4 i that has moved from above the drum 73丨 before the main coating process. It is applied to the drum 73 1 . In the substrate processing apparatus 1 of the present embodiment, the state of the slit nozzle 41 is made uniform in the γ-axis direction by the preliminary coating process. The coated surface of the drum 73 1 can be immersed in the accumulated cleaning liquid in the lower inner portion of the casing 732. That is, the coated surface on which the resist liquid is applied in the preliminary coating treatment is applied to the lower side and is washed by the cleaning liquid by the rotating mechanism. Further, the stain adhering to the coated surface taken out from the washing liquid after washing is removed by the dewatering blade 733. In this manner, the coated surface can be restored to the clean state during one rotation of the roller 731. Therefore, when the preliminary coating process is performed by the slit nozzle 41, the slit nozzle 41 will not be contaminated. And one nozzle initialization mechanism 7 has a wound nozzle cleaning mechanism 7〇. Fig. 3 is a view showing the configuration of the nozzle cleaning mechanism 7A. The nozzle is cleaned (4) to the mechanism 71, the suction mechanism 72, the cleaning unit 74, the cleaning liquid supply mechanism, and the drive mechanism 76', and is mainly a mechanism for performing the above-described nozzle cleaning process. In addition, although not shown in FIG. 3, the gas supply mechanism 71, the suction mechanism 72, the cleaning liquid supply mechanism, and the drive mechanism % are respectively connected to the control unit 8 in a state in which a signal can be transmitted and received, and each of these is connected. The mechanism is controlled by a control signal from the control unit 8. The gas supply mechanism 71 supplies a mechanism for supplying a nitrogen gas from the canister (not shown) to the cleaning unit 74 via a supply pipe. The nitrogen gas supplied to the cleaning (4) is ejected from the gas nozzle 7_ in a specific direction (details will be described later). Further, in the substrate processing apparatus T s0 m , 1 in the present embodiment, a nitrogen gas is used as the inert body, but the inert gas is not limited to the nitrogen gas. Also, if the air is clean, even air can be used (I air: pressurized air). The suction mechanism 72 is sucked from the cleaning unit 74 by the waste piping. | Mouth :_), a mechanism for attracting cleaning liquid or anti-surname liquid that can be removed by washing liquid. Further, as the attraction mechanism 72, a well-known mechanism can be generally used. For example, the medium and the ΤΛ ^ can also be a mechanism that uses a vacuum generating device or a <1 shrinking machine to attract a pump and a gas-liquid separation BOX 98458.doc -18- 1293578. Further, for example, an exhaust device installed in a factory may be used as long as the required force is obtained. The cleaning unit 74 mainly includes a base 74, a partition 741, a discharge portion 742, a guide block 743, and a support member 744, and has the following functions: in the nozzle cleaning process, the cleaning is removed due to repeated formalities. The anti-money agent liquid adhered to the side surface of the front end of the slit Mouth 41 by the coating treatment. The susceptor 74, which functions as a base of each of the cleaning portions 74, is connected to the drive mechanism 76, and can be moved back and forth in the γ-axis direction by the drive mechanism %. ▲ The spacer 74 has a specific thickness. The plate member is inserted between the base 740 and the discharge portion 742 in a detachable state. In the present embodiment, the P«g object 741 is fixed by the screw inserted from the rear surface of the base 740 toward the discharge portion 742, and can be detached by loosening the screw. Thus, the Z-axis position of the discharge portion 742 can be adjusted by appropriately exchanging the partition 741' disposed between the base 740 and the discharge portion 742 to have different thicknesses. As described below, the washing nozzle 750 is provided at a specific position of the discharge portion 742, and the position in the two-axis direction of the adjustment discharge portion 742 corresponds to the height position (position in the z-axis direction) of the washing = nozzle 750. Therefore, the nozzle cleaning mechanism 7G of the present embodiment can adjust the supply position of the cleaning liquid supplied by the cleaning liquid supply mechanism to the redundant axis direction. 4 is a front view of the opposing surface 7仏 of the ejection portion 742. The ejecting portion is configured to dispose the cleaning nozzle 7 in contact with the cleaning nozzle by a specific positional relationship. Thereby, the nitrogen gas of the gas nozzle 71 is determined: the U position and the supply position of the cleaning liquid of the cleaning nozzle 75G. Again 98458.doc

-19- 1293578 圖4中之21至24表示對向面⑽中之氣體喷嘴7ι〇以及 贺嘴750的Z軸方向座標。又，本實施形態中之噴出部μ •中之Z1至Z4為等間隔定位，但並非僅限於此。 • 以對向於狹縫喷嘴41之前端部之方式而得以配置之對向 .面7仏根據狹縫噴嘴41之前端部之傾斜度，成為對於γζ^ 面具有特定角度之斜度的斜面。如圖3所示，於對向面 742a上分佈有氣體喷嘴71〇以及洗淨喷嘴75〇，且分別連通 鲁 連接於氣體供給機構71以及洗淨液供給機構75。 藉由氣體供給機構71所供給之氮氣體自氣體噴嘴71〇噴 出於狹縫喷嘴41。藉此，可藉由喷嘴洗淨處理，有效揮發 (或吹去）附著於狹縫喷嘴41之洗淨液。再者，自洗淨噴嘴 750喷出之洗淨液藉由與狹縫噴嘴41衝擊，將飛散至若干 高於噴出時之高度位置的位置為止。如圖4所示，於本實 施形態中之基板處理裝置1中，以來自氣體噴嘴71〇之氮氣 體之供給位置成為位於洗淨液飛散位置之上方之方式，將 • 氣體喷嘴710設置於洗淨喷嘴750之上方。藉此，喷嘴乾燥 處理中，可更有效乾燥狹缝喷嘴41。 又，氣體噴嘴710包含下方氣體喷嘴710a與上方氣體喷 嘴710b。於對向面74以中，下方氣體噴嘴71以配置於以高 度位置，而上方氣體喷嘴7l〇b配置於下方氣體噴嘴71〇&之 上方的Z4南度位置。 又’洗淨噴嘴750包含下方洗淨噴嘴750a與上方洗淨喷 嘴750b。於對向面742at，下方洗淨噴嘴乃以配置於以高 度位置，而上方洗淨喷嘴75〇b配置於下方氣體喷嘴乃⑹之 98458.doc -20- 1293578 上方的Z2面度位置。 圖5係表示洗淨部74之導向組塊743的立體圖。導向組塊 • 743係於Y軸方向具有大致均勻剖面之棒狀構件，其χ軸方 • 向厚度為狹縫噴嘴41之喷口 41a寬度（X軸方向寬度）以上， 且未滿支持構件744之X軸方向寬度。 導向組塊743藉由一對支持構件744固定支持有γ軸方向 之兩端部’並介以支持構件744相對於基座740而得以安 私裝。即，導向組塊743下面自基座740離開，於基座74〇與 導向組塊743之間形成有空間。於本實施形態中之洗淨部 74中，基座740與導向組塊743之相對位置為固定。 又，導向組塊743之上面為接近狹縫噴嘴41之前端部的 接近面743a。接近面743a係朝向χ軸方向之兩端向下方彎 曲之曲面。又，導向組塊743之側面中對向於喷出部742之 面為大致平行於ΥΖ平面之導向面743b。導向面以扑離開 於噴出部742，故該等之間形成有空間。 > 於一對支持構件744中之（-γ側）支持構件744，設置有吸 引口 720，並介以上述廢棄配管連通連接於吸引機構72(圖 3)。吸引口 720係貫通支持構件744之孔，並設置於安裝在 支持構件744之導向組塊743之下方。 藉此，若吸引機構72開始吸引，則導向組塊743下方之 空間將受到吸引。再者’亦可構成為如下：於兩者之支持 構件744中設置吸引口 72G，並自各自之方向吸引機構Μ 施吸引。 返回圖3，洗淨液供給機構75係包含洗淨液塑料瓶或輸 98458.<j〇c 1293578 液泵等之機構 74 ° 並介以供給配管將洗淨液供給至洗淨部 驅動機構76係使洗淨部74移動至丫軸方向之機構。作 驅動雜6,可採用使用有旋轉馬達與圓頭螺栓之直動機 構圖6係將噴出部742移動之情形與狹縫喷嘴41 —併表示 之圖再者，以下將圖6所示之狹縫噴嘴41之位 「洗淨位置」。 彳冉马 如此’對於處於洗淨位置之狹縫噴嘴“之前端部 =2在返移動於γ軸方向，藉此設置於喷出部川之氣體 噴嘴71〇以及洗淨噴嘴75()可掃描狹缝喷嘴41之前端部。^ 者驅動機構7 6不僅可於洗淨部7 4實施用以掃描狹縫嘴嘴 2亦可貝轭使洗淨部74自狹縫噴嘴41下方退避的 ㈣。藉此，於狹縫喷嘴41之前端部***至下述待機盒77 犄，洗淨部74與狹縫噴嘴41可互不干擾。 、回圖2,待機盒77係具有與狹縫噴嘴々I之長度方向寬 又大致相同尺寸的大致箱狀構件。於待機盒π内部蓄積有 日^劑液_。待機盒77於較㈣間未實施正式塗佈處理 ^係以狹縫噴嘴41之尤其喷口 4U附近的抗飿劑液不會 產生乾燥變質之方式而設置之機構。 :待機盒77上面，設置有用以將狹縫喷嘴41之前端部插 内部的開口部。狹縫噴嘴41於待機中將自洗淨位置移 置進而下降至Ζ軸方向的特定位置（以下，稱為「待機位 」）。狹縫噴嘴41位於兮ϋ ， 端位方…亥待機位置時，狹縫噴嘴41之前 °成為自開"部插人至待機心内部之狀態，並暴露 98458.doc -22- 1293578 於溶劑環境中藉此抗姓劑液之乾燥將會受到抑制 返回圖卜於控制部8之内部具備根據程式處理各種資料 之運算⑽、保存程式或各種資料之記憶部8ι。又，於前 面具備用於操縱器輪入對於基板處理裝置^斤必須之 的操作部82,以及顯示各種資料之顯示部心 日 太Γ部8藉由圖1中並未圖示之纔線，電性連接於附屬於 本體2之各機構。控制部8係根據來自操作部82之輸入作 或來自並未圖示之各種感測器等之信號 機 構43、44之升降動作、移動機構5之移動動作、抗__ :機構6之抗韻劑液供給動作。進而，控制喷嘴初始化機 構之“區動機構、各旋轉機構以及各閥門等之動 ^是控制氣體供給機構71以及洗淨液供給機構乃之供給流 里。 再者’具體的是，暫時記憶資料之Ram、讀 讓以及磁碟裝置等相當於記憶部81。或，亦可為便攜式 光磁碟或記憶體卡片等之記憶媒體， 及^專之讀取裝置 專。又，按細及開關類（包含鍵盤或滑鼠等 操作部82 ”戈，亦可為如觸摸田、 奴录具顯示部83 之功此者。液晶顯示器或各種燈等則相當於顯示部㈡。 以上係本實施形態中之基板處理裝置ι之功 之說明。 久稱风 其次’就喷嘴洗淨機構7〇洗淨狹缝噴嘴41之前 動作(噴嘴洗淨處理)加以說明。圖7至圖9係表 處理之情況的圖。再者，圖7至圖9中狹縫噴嘴41之位置： 98458.doc -23· 1293578 係洗淨位置。又，於圖7至圖9中，省略關於支持構件744 之圖示，並且導向組塊743以及狹縫噴嘴41以剖面表示。 首先，藉由控制部8於喷嘴洗淨處理前控制驅動機構 76 ’從而使處於退避狀態之洗淨部74移動至對於狹縫喷嘴 41貫施洗淨處理的位置。又，控制部8以與該處理並行之 方式控制升降機構43、44以及移動機構5，藉此使狹縫喷 嘴41移動至洗淨位置。-19- 1293578 21 to 24 in Fig. 4 indicate the gas nozzles 7ι in the opposite plane (10) and the Z-axis direction coordinates of the mouthpiece 750. Further, in the discharge portion μ in the present embodiment, Z1 to Z4 are positioned at equal intervals, but the invention is not limited thereto. • The opposing surface 7 that is disposed so as to face the front end portion of the slit nozzle 41 is a slope having a slope of a specific angle with respect to the γζ surface according to the inclination of the front end portion of the slit nozzle 41. As shown in Fig. 3, a gas nozzle 71A and a cleaning nozzle 75A are distributed on the opposing surface 742a, and are connected to the gas supply mechanism 71 and the cleaning liquid supply mechanism 75, respectively. The nitrogen gas supplied from the gas supply mechanism 71 is sprayed from the gas nozzle 71 to the slit nozzle 41. Thereby, the cleaning liquid adhering to the slit nozzle 41 can be efficiently volatilized (or blown off) by the nozzle cleaning treatment. Further, the cleaning liquid sprayed from the washing nozzle 750 is scattered by the slit nozzle 41 to a position higher than the height position at the time of discharge. As shown in FIG. 4, in the substrate processing apparatus 1 of the present embodiment, the gas nozzle 710 is set to be washed so that the supply position of the nitrogen gas from the gas nozzle 71 is located above the scattering liquid scattering position. Above the net nozzle 750. Thereby, the slit nozzle 41 can be dried more effectively in the nozzle drying process. Further, the gas nozzle 710 includes a lower gas nozzle 710a and an upper gas nozzle 710b. In the intermediate surface 74, the lower gas nozzle 71 is disposed at a high position, and the upper gas nozzle 71b is disposed at a Z4 south position above the lower gas nozzle 71 〇 & Further, the cleaning nozzle 750 includes a lower cleaning nozzle 750a and an upper cleaning nozzle 750b. At the opposite surface 742at, the lower cleaning nozzle is disposed at a height position, and the upper cleaning nozzle 75〇b is disposed at a Z2 power level position above the 98458.doc -20-1293578 of the lower gas nozzle (6). FIG. 5 is a perspective view showing the guide block 743 of the washing portion 74. Guide block • 743 is a rod-shaped member having a substantially uniform cross section in the Y-axis direction, and the thickness of the y-axis is greater than the width (width in the X-axis direction) of the nozzle 41a of the slit nozzle 41, and is less than the support member 744. The width in the X-axis direction. The guide block 743 is fixedly supported by the pair of support members 744 at both end portions in the γ-axis direction and is secured to the support member 744 with respect to the base 740. That is, the guide block 743 is separated from the base 740, and a space is formed between the base 74A and the guide block 743. In the cleaning portion 74 in the present embodiment, the relative position of the base 740 and the guide block 743 is fixed. Further, the upper surface of the guide block 743 is a proximity surface 743a close to the front end portion of the slit nozzle 41. The approach surface 743a is a curved surface that is bent downward toward both ends in the z-axis direction. Further, the surface of the guide block 743 opposite to the discharge portion 742 is a guide surface 743b substantially parallel to the meandering plane. The guide surface is separated from the ejection portion 742, so that a space is formed between the surfaces. > The (-γ side) supporting member 744 of the pair of supporting members 744 is provided with an suction port 720, and is connected to the suction mechanism 72 (Fig. 3) via the waste pipe. The suction port 720 is penetrated through the hole of the support member 744 and is disposed below the guide block 743 mounted on the support member 744. Thereby, if the attraction mechanism 72 starts to attract, the space below the guide block 743 will be attracted. Further, it may be configured such that the suction port 72G is provided in the support members 744 of both of them, and the suction mechanism is applied from the respective directions. Referring back to Fig. 3, the cleaning liquid supply mechanism 75 is provided with a cleaning liquid plastic bottle or a mechanism of a 98458.<j〇c 1293578 liquid pump, etc., and supplies the cleaning liquid to the washing unit drive mechanism via a supply pipe. 76 is a mechanism for moving the cleaning unit 74 to the x-axis direction. As the driving miscellaneous 6, a linear motion mechanism using a rotary motor and a ball screw can be used. FIG. 6 is a view showing a state in which the ejection portion 742 is moved and a slit nozzle 41. Further, the slit shown in FIG. 6 will be described below. The position of the nozzle 41 is "cleaning position". The hummer is so 'for the slit nozzle in the cleaning position, the front end portion = 2 is moved back in the γ-axis direction, and the gas nozzle 71 设置 and the cleaning nozzle 75 () which are disposed in the discharge portion can be scanned. The front end portion of the slit nozzle 41 can be used not only for the cleaning portion 74 but also for scanning the slit nozzle 2 or for the yoke to retract the cleaning portion 74 from below the slit nozzle 41 (4). Thereby, the end portion of the slit nozzle 41 is inserted into the standby box 77 下述 below, and the cleaning portion 74 and the slit nozzle 41 are not interfered with each other. Referring back to FIG. 2, the standby box 77 has a slit nozzle 々I. A substantially box-shaped member having a width and a substantially same length in the longitudinal direction. The liquid solution _ is accumulated in the standby box π. The standby box 77 is not subjected to the formal coating process between the four (four) portions, and the special nozzle of the slit nozzle 41 is used. A mechanism in which the anti-caries agent liquid in the vicinity of 4U is not dried and deteriorated. The upper portion of the standby box 77 is provided with an opening for inserting the front end portion of the slit nozzle 41 into the inside. The slit nozzle 41 is in standby. The self-cleaning position is displaced and further lowered to a specific position in the direction of the x-axis (hereinafter referred to as " Standby bit ”). When the slit nozzle 41 is located at the 兮ϋ, the end position...the standby position of the slit, the slit nozzle 41 becomes the state of the self-opening portion to the inside of the standby core, and exposes 98458.doc -22-1293578 in the solvent environment. In this case, the drying of the anti-surname agent liquid is suppressed. The memory unit 81 having the calculation (10), the save program, or various materials for processing various materials according to the program is provided inside the control unit 8. Further, the operation unit 82 for manipulating the wheel to the substrate processing apparatus and the display unit for displaying various materials are provided on the front side by a line not shown in FIG. Electrically connected to each mechanism attached to the body 2. The control unit 8 is based on the input from the operation unit 82, the lifting operation of the signal mechanisms 43 and 44 from various sensors (not shown), the movement operation of the moving mechanism 5, and the anti-magnitude of the mechanism 6 The liquid supply action. Further, the "moving mechanism", the respective rotating mechanisms, and the valves of the nozzle initializing means are controlled by the gas supply means 71 and the cleaning liquid supply means. Further, "specifically, the data is temporarily stored. The Ram, the reading device, and the disk device are equivalent to the memory unit 81. Alternatively, they may be a memory medium such as a portable optical disk or a memory card, and a dedicated reading device. (including the operation unit 82 such as a keyboard or a mouse), and may be the same as the touch field or the slave recording unit 83. The liquid crystal display or various lamps and the like correspond to the display unit (2). Description of the work of the substrate processing apparatus ー. The long-term wind is described as follows: [The nozzle cleaning mechanism 7] before the cleaning slit nozzle 41 is operated (nozzle cleaning processing). FIG. 7 to FIG. Further, the position of the slit nozzle 41 in FIGS. 7 to 9 is: 98458.doc -23· 1293578 is a washing position. Further, in FIGS. 7 to 9, the illustration about the supporting member 744 is omitted, and Guide block 743 and slit nozzle 41 First, the control unit 8 controls the drive mechanism 76' before the nozzle cleaning process to move the cleaning unit 74 in the retracted state to a position where the cleaning process is applied to the slit nozzle 41. Further, the control unit 8 The lift mechanisms 43 and 44 and the moving mechanism 5 are controlled in parallel with this process, whereby the slit nozzle 41 is moved to the washing position.

藉此，狹縫喷嘴41與洗淨部74成為圖7所示之配置關 係。此時，如圖7所示，由於重複塗佈處理，導致於狹縫 喷嘴41之前端部側面附著有抗蝕劑液。再者，本實施形態 中之基板處理裝置丨中，以於喷嘴洗淨處理中狹縫噴嘴41 之下端與導向組塊743之接近面743&的距離（接近距離）成為 、、’勺1.5 mm之方式，定位狹縫喷嘴4丨之洗淨位置，但當然並 非僅限於此。亦可藉由所使用之洗淨液性質或喷出流量 等’預先適當設定接近距離。 若藉由到此為止之移動動作喷嘴洗淨處理之準備結束， 則藉由洗淨液供給機構75使閥門為開放狀態而開始供給洗 淨液，如®8所示’洗淨喷嘴750朝向狹縫噴嘴41之前端部 側面噴出洗淨液。與洗淨噴嘴75〇噴出洗淨液之動作並 行，吸引機構72自吸引口 720開始吸引。 圖1〇係圖8所示之狀態的擴大圖。如圖U)所示， 洗淨喷嘴75Ga以及上方洗淨噴嘴75Qbu :液二= LQ):所贺出之清洗液LQ將會衝擊狹縫噴嘴41之前端部側 面，藉此洗淨狹縫噴嘴41。 98458.doc -24- 1293578 此時，藉由自下方洗淨喷嘴750a喷出之清洗液lq，溶 解附著於狹缝噴嘴41之前端部側面的抗蝕劑液R。藉此， *於狹縫喷嘴41之前端部側面將會存在抗蝕劑液R與清洗液 -,LQ之混合液（抗蝕劑液R濃度較高之混合液）。因於先前裝 置十，洗淨喷嘴之高度位置配置為存在段差，故而藉由該 混合液將形成如圖23所示之附著物rl。 然而，本實施形態中之基板處理裝置丨除下方洗淨噴嘴 _ 75〇a以外尚具備上方洗淨噴嘴750b。故而，如圖1〇所示， 藉由上方洗淨喷嘴750b，可將清洗液！^供給至進而高於 下方洗淨噴嘴乃⑽之清洗液LQ之供給位置的位置。 即，藉由上方洗淨喷嘴750b所供給之清洗液^^可將藉 由下方洗淨喷嘴750a供給清洗液LQ所生成之混合液，進而 自上方向下方沖洗。故而，由於不致如先前裝置般殘留有 條紋狀附著物RL，而提高噴嘴洗淨處理中之洗淨效果，因 此可良好恢復狹縫喷嘴41之狀態。 • j由洗淨噴嘴750所噴出之清洗液LQ將沿著狹縫喷嘴41 之則鈿部側面流向下方，其一部分會附著於狹縫喷嘴41之 下面然而，附著於狹縫喷嘴41下面之清洗液LQ藉由與 接近面743a接觸而將迅速沿著接近面743&受到引導，從而 机向兩側之導向面743b。藉由該流動可將狹縫喷嘴41之下 ^ 、洗'爭’並且迅速除去藉由清洗液LQ而溶解之抗蝕 叫 進而’清洗液LQ得以引導至導向組塊743之導向 面743b，並流向下方。 士此藉由接近面743a成為向下方彎曲之曲面，洗淨部 98458.doc (8) -25- 1293578 74可迅速排出清洗液LQ。又，藉由導向組塊％具有導向 面鳩，可進而迅速排出附著於狹縫噴嘴41下面之清洗液 * LQ，上述導向面743b係將藉由洗淨液供給機構乃所供給 、 之清洗液LQ導向下方者。 % 如上所述，清洗液LQ自洗淨噴嘴750喷出之期間，吸引 機構72將吸引狹縫喷嘴41之下方。如圖ι〇所示，該吸引機 構72之吸.引力藉由導向組塊743以不會直接作用於喷口仏 肖圍之方式得以遮斷。即，用於洗淨之清洗液lq將自形 成於喷出部742與導向面鳩之間的空間之上部開口部（為 沿著Y軸方向之隙縫狀開口部）受到吸引。 填充於狹縫喷嘴41内之抗㈣!液R主要藉由作用於（-Z) 方向之力得以吸出。然而’如圖1〇中作為向下箭頭所示， 若吸引機構72之吸引力作用於自喷口4U分離之位置，則 於喷口 41a周圍該吸引力將主要作用於χ軸方向，而作用於 〇ζ)方向之吸引力會減弱。 • 於洗淨部74中，吸引機構72之吸引力作用於（_Ζ)方向之 位置係藉由導向組塊743之導向面“π之位置而定位。故 而’藉由調整導向組塊743之χ軸方向厚度，可調整作用於 喷口 41a之（-Z)方向之吸引力。 於本實施形態中之洗淨部74中，以喷口41a周圍大致成 為抗蝕劑液R之停滯點之方式，預先決定導向組塊743之厚 度’藉此抑制抗蝕劑液R之流出。再者，#由吸引力 用之位置位於狹縫喷嘴41之前端部側面之下方，可迅速將 除去附著於前端部側面之抗蝕劑液尺之清洗液[0向下方吸 98458.doc -26· 1293578 引排出。又，藉由導向組塊743之χ軸方向之厚度，定位噴 出部742與導向組塊743之間隔，但該間隔越窄則吸引機構 ^ 72之吸引力會越弱，從而作用於狹縫喷嘴41之前端部側面 * 的吸引力將會增加。 - 藉此’由於本實施形態中之噴嘴洗淨機構70藉由導向組 塊743之厚度，可減弱作用於喷口 41 a内之抗蝕劑液r的吸 引機構72之吸引力，故而即使使用多於先前裝置之清洗液 φ LQ，亦可藉由適宜增大吸引機構72之吸引力，迅速吸引 排出所使用之清洗液LQ。因此，可提高喷嘴洗淨處理中 之洗淨效果。 以與來自洗淨液供給機構75之清洗液LQ的供給動作、 以及由吸引機構72引起之吸引動作並行之方式，實施洗淨 部74之掃描動作。即，驅動機構76實施下述動作：沿著γ 軸方向於橫跨狹縫喷嘴41之全部寬度，使洗淨部74往返移 動。 φ 藉此，於橫跨狹縫喷嘴41之Y軸方向之全部寬度，自洗 淨喷嘴750喷出清洗液LQ，從而進行喷嘴洗淨處理。如 此’藉由驅動機構76實施洗淨部74之掃描，藉此例如無需 橫跨狹縫喷嘴41之全部寬度配置洗淨噴嘴75〇，即可實現 裝置之小型化。再者，重複該掃描動作之次數係任意的， 並根據實施前次喷嘴洗淨處理後所實行之正式塗佈處理次 數，或所使用之抗蝕劑液R性質等，預先設定恰當數值。 若特定次數之掃描動作結束，則洗淨液供給機構75將停 止供給清洗液LQ。藉此，喷出藉由洗淨喷嘴75〇之清洗液 98458.doc -27- 1293578 LQ停止。進而，氣體供給機構71開始供給氮氣體，自氣 體贺嘴710喷出氮氣體。再者，該期間亦繼續驅動機構％ 對洗淨部74之掃描動作。 如此，自氣體喷嘴71〇朝向狹縫噴嘴41之前端部喷出氮 氣體，並且使洗淨部74沿著Y軸方向移動，藉此乾燥附^ 於狹縫噴嘴41之清洗液LQ之處理得以促進。如圖*所示， 於噴出部742之對向面顺中，由於全部氣體噴嘴η吟置 於高於全部洗淨喷嘴75G之位置，因此氣”嘴川可有效 將氮氣體供給至附著有清洗液叫之區域。再者，用以乾Thereby, the slit nozzle 41 and the cleaning portion 74 have the arrangement relationship shown in Fig. 7 . At this time, as shown in Fig. 7, the coating liquid is applied to the end surface of the slit nozzle 41 due to the repeated coating treatment. Further, in the substrate processing apparatus according to the present embodiment, the distance (proximity distance) between the lower end of the slit nozzle 41 and the approaching surface 743 & of the guide block 743 in the nozzle cleaning process becomes, "spoon 1.5 mm" In this manner, the cleaning position of the slit nozzle 4 is positioned, but it is of course not limited thereto. The approach distance can also be appropriately set in advance by the nature of the cleaning liquid to be used, the discharge flow rate, and the like. When the preparation of the moving operation nozzle cleaning process is completed, the cleaning liquid supply mechanism 75 starts the supply of the cleaning liquid by the cleaning liquid supply mechanism 75, and the cleaning nozzle 750 is oriented toward the narrow side as shown in FIG. The cleaning nozzle 41 sprays the cleaning liquid on the side of the front end portion. The operation of discharging the cleaning liquid is performed in parallel with the washing nozzle 75, and the suction mechanism 72 starts suctioning from the suction port 720. Fig. 1 is an enlarged view of the state shown in Fig. 8. As shown in Fig. U), the cleaning nozzle 75Ga and the upper cleaning nozzle 75Qbu: liquid two = LQ): the cleaning liquid LQ that is congratulated will hit the front side of the slit nozzle 41, thereby cleaning the slit nozzle 41. 98458.doc -24- 1293578 At this time, the cleaning liquid Rb ejected from the lower cleaning nozzle 750a dissolves the resist liquid R adhering to the side surface of the front end of the slit nozzle 41. Thereby, a mixed liquid of the resist liquid R and the cleaning liquid - and LQ (a mixed liquid having a high concentration of the resist liquid R) is present on the side surface of the end portion of the slit nozzle 41. Since the height position of the washing nozzle is configured to have a step difference due to the previous device ten, the adhering matter rl as shown in Fig. 23 is formed by the mixed liquid. However, the substrate processing apparatus according to the present embodiment includes the upper cleaning nozzle 750b in addition to the lower cleaning nozzle _75〇a. Therefore, as shown in FIG. 1A, the cleaning liquid can be washed by the upper cleaning nozzle 750b! ^ is supplied to a position higher than the supply position of the cleaning liquid LQ of the lower cleaning nozzle (10). In other words, the cleaning liquid supplied from the cleaning nozzle 750b can be supplied to the mixed liquid generated by the cleaning liquid LQ by the lower cleaning nozzle 750b, and further flushed from the upper side to the lower side. Therefore, since the stripe-like deposit RL remains as in the prior art, the cleaning effect in the nozzle cleaning process is improved, so that the state of the slit nozzle 41 can be well restored. • The cleaning liquid LQ ejected from the cleaning nozzle 750 flows downward along the side surface of the slit nozzle 41, and a part thereof adheres to the lower surface of the slit nozzle 41. However, the cleaning is attached to the lower surface of the slit nozzle 41. The liquid LQ is quickly guided along the approaching surface 743& by the contact with the approaching surface 743a, thereby being guided to the guiding surfaces 743b on both sides. By this flow, the slit nozzle 41 can be washed, and the resist which is dissolved by the cleaning liquid LQ can be quickly removed, and then the cleaning liquid LQ can be guided to the guide surface 743b of the guiding block 743, and Flows down. By the proximity surface 743a, the curved surface is bent downward, and the cleaning portion 98458.doc (8) -25 - 1293578 74 can quickly discharge the cleaning liquid LQ. Further, since the guide block % has the guide surface 鸠, the cleaning liquid * LQ adhering to the lower surface of the slit nozzle 41 can be quickly discharged, and the guide surface 743b is a cleaning liquid supplied by the cleaning liquid supply mechanism. LQ leads to the bottom. % As described above, the suction mechanism 72 will suck the lower side of the slit nozzle 41 while the cleaning liquid LQ is ejected from the cleaning nozzle 750. As shown in Fig. ,, the attraction force of the attraction mechanism 72 is blocked by the guide block 743 so as not to act directly on the nozzle 仏. In other words, the cleaning liquid lq for cleaning is attracted to the upper opening portion (the slit-shaped opening portion along the Y-axis direction) formed in the space between the discharge portion 742 and the guide surface 鸠. The anti-(four)! liquid R filled in the slit nozzle 41 is mainly sucked by the force acting in the (-Z) direction. However, as shown by the downward arrow in Fig. 1A, if the attraction force of the attraction mechanism 72 acts on the position separated from the nozzle 4U, the attraction force will mainly act on the x-axis direction around the nozzle 41a, and act on the 〇 ζ) The attraction of the direction will be weakened. • In the cleaning unit 74, the position at which the attraction force of the attraction mechanism 72 acts in the (_Ζ) direction is positioned by the guide surface of the guide block 743 "the position of π. Therefore, by adjusting the guide block 743" The thickness in the axial direction can be adjusted to the suction force acting in the (-Z) direction of the nozzle 41a. In the cleaning portion 74 of the present embodiment, the periphery of the nozzle 41a is substantially a stagnation point of the resist liquid R, and is advanced in advance. The thickness of the guiding block 743 is determined to thereby suppress the outflow of the resist liquid R. Further, the position of the attraction force is located below the side surface of the front end of the slit nozzle 41, and can be quickly removed and attached to the side of the front end portion. The cleaning liquid of the resist liquid level [0 is sucked downwards 98458.doc -26· 1293578. Further, by the thickness of the guiding block 743 in the direction of the x-axis, the interval between the positioning ejecting portion 742 and the guiding block 743 is separated. However, the narrower the interval, the weaker the attraction force of the attraction mechanism 72, so that the attraction force acting on the front side* of the slit nozzle 41 will increase. - By this, the nozzle is cleaned in this embodiment. The mechanism 70 can be reduced by the thickness of the guiding block 743 The attraction force of the suction mechanism 72 of the resist liquid r acting in the nozzle 41a is such that even if more cleaning liquid φ LQ than the previous device is used, the suction force of the suction mechanism 72 can be appropriately increased to quickly attract the discharge. The cleaning liquid LQ used can improve the cleaning effect in the nozzle cleaning process in parallel with the supply operation of the cleaning liquid LQ from the cleaning liquid supply mechanism 75 and the suction operation by the suction mechanism 72. The scanning operation of the cleaning unit 74 is performed. That is, the drive mechanism 76 performs an operation of moving the cleaning unit 74 back and forth across the entire width of the slit nozzle 41 along the γ-axis direction. The nozzle cleaning process is performed by ejecting the cleaning liquid LQ from the cleaning nozzle 750 across the entire width of the slit nozzle 41 in the Y-axis direction. Thus, the scanning of the cleaning unit 74 is performed by the drive mechanism 76, whereby By arranging the cleaning nozzle 75A across the entire width of the slit nozzle 41, the size of the apparatus can be reduced. Further, the number of times of repeating the scanning operation is arbitrary, and the actual nozzle cleaning process is performed. The appropriate number of times of the actual application processing, or the nature of the resist liquid R to be used, etc., is set in advance. When the scanning operation of a certain number of times is completed, the cleaning liquid supply mechanism 75 stops supplying the cleaning liquid LQ. The cleaning liquid 98458.doc -27-1293578 LQ is stopped by the cleaning nozzle 75. Further, the gas supply mechanism 71 starts to supply the nitrogen gas, and the nitrogen gas is ejected from the gas balloon 710. Further, the gas is continuously driven during the period. The mechanism % scans the cleaning unit 74. In this manner, the nitrogen gas is ejected from the gas nozzle 71A toward the end portion of the slit nozzle 41, and the cleaning portion 74 is moved in the Y-axis direction, thereby drying and attaching The treatment of the cleaning liquid LQ of the slit nozzle 41 is promoted. As shown in FIG. *, in the middle of the opposite surface of the discharge portion 742, since all the gas nozzles η are placed at a position higher than the entire cleaning nozzles 75G, the gas nozzle can effectively supply the nitrogen gas to the attached cleaning. The area called liquid. Again, to dry

燦清洗液LQ的掃描動作之次數亦可預先設定特定數值。G 若特定次數之掃描動作結束，則㈣部8藉由使驅動機 構76停止從而結束洗淨部74之掃描動作，並且控制氣體供 給：構71使之停止供給氮氣體。藉此，停止嘴出來自氣體 Μ 71〇之氮氣體’用以乾燥狹縫喷嘴41之掃描動作妹 束。 。 藉由上述動作，本實施形態中之基板處理裳置i之喷嘴 洗淨處理得以結束。再者，於噴嘴洗淨處理結束後，於預 備塗佈機構73中實施預備塗佈處理，調整狹縫噴料之狀 錢實施正式塗佈處理。其令，喷嘴洗淨處理後之動作並 非僅限於此，如若實施正式塗佈處理為止耗費時間較多， 則亦可使狹縫喷嘴41移動至待機位置，以防止狹鏠嘖嘴41 之抗_R的乾燥。即，藉由驅動機構76使洗淨部74自 狹縫育嘴41^下方退避’並進而使狹縫喷嘴則洗淨位置 降下’使其前端部暴露於待機盒77内之溶劑環境。 98458.doc -28- 1293578 藉由上述方式，如圖7等所示，本實施形態中之基板處 理裝置1係藉由導向組塊743具有狹縫噴嘴41之噴口 41 a的 較短方向寬度以上之厚度，並配置於狹縫噴嘴41之噴口 • 41 a之下方周圍，且吸引機構72之吸引口 720自導向組塊 - 743下方貫施吸引’並且以狹缝噴嘴41之噴口 41&周圍大致 成為抗蝕劑液R之停滯點之方式調整吸引機構72之吸引 力，藉此可藉由吸引排出迅速排出洗淨液與污染物，並且 Φ 可抑制自噴口 41a吸出狹縫噴嘴41内之抗蝕劑液R。 又‘向組塊743具有將藉由洗淨液供給機構75所供給 之清洗液LQ導向下方之導向面74扑，藉此可進而迅速排 出所使用之清洗液LQ。 、又，由於可藉由具備調整來自洗淨液供給機構乃之清洗 液LQ之供給位置的分隔物741並根據狀況變更洗淨位置， 故而例如即使附著有抗餘劑液R之範圍有所不同時亦可靈 活對應。 另又，供給位置之調整藉由具有特定厚度之分隔物Μ] I7而得以貝現，藉此無需複雜機構即可易於實現。 々 可藉由具備使洗淨部74沿著狹縫噴嘴41之長度方 私動之驅動機構76從而實現裝置整體之小型化。 :’藉由具備將氮氣體供給至狹縫噴嘴41之前端部的 體仏給機構71， w讯、 乳肢七、給機構71之氮氣體之供給 口又為來自洗淨液供給機 、、主 饵偁/5之π洗液LQ之供給位置 方，從而可促進洗淨液之乾燥。 又 將來自上方洗淨喷嘴+、主山 ^ 1爲75Ob之清洗液Lq之供給 98458.d〇( -29- 1293578 置，以對於來自下方洗淨喷嘴750a之清洗液Lq之供給位 置’高度方向互為不同之方式而配置，藉此可防止條紋狀 • 附著物RL(圖23)殘留於狹縫喷嘴41之前端部側面。故而， _ 可提高洗淨效果。 再者’本實施形態中之基板處理裝置1構成為下方洗淨 喷嘴750a以及上方洗淨喷嘴750b可同時噴出清洗液LQ。然 而，例如藉由其他糸統之配管將下方洗淨噴嘴乃〇 a與上方 洗淨喷嘴750b連通連接於洗淨液供給機構75，亦可控制如 下：於去路上之掃描（藉由喷出部742之狹縫噴嘴41的掃描） 中僅實施下方洗淨喷嘴750a之喷出，而於返路上之掃描中 僅實施上方洗淨喷嘴750b之噴出。 又，自洗淨喷嘴750喷出清洗液LQ且實施掃描動作時， 亦可並订喷出氮氣體。該情形時，由於所謂氮氣體之幕簾 形成於洗淨喷嘴750之上方，因此可防止清洗液LQ之薄霧 等飛散於狹縫喷嘴41上方。 <2·弟二實施形態> 第一實施形態係構成為吸引機構72之吸引口 72〇設置於 噴口 4U之下方，故自導向組塊743之下方吸引清洗液lq， 然而吸引機構72之吸引位置（設置有吸引口之位置）並非僅 限於此。 圖11係表示根據如此之原理而構成之第二實施形態中之 噴嘴洗淨機構70之構志的同 ^ 偁成的圖。又，圖12係第二實施形態中 之喷出部之對向面的正視圖。 本貫施形態中之喷^皆、、杰、、<,4 k $為洗平機構70具備洗淨部74a而代替 98458.doc -30- 1293578 第-實施形態中之洗淨部74,於此方面上與第—實施形態 中之喷嘴洗淨機構7G有所不同。再者，關於與第—實施形 態中之基板處理裝置!大致相同之構成，附有相同符號並 適當省略說明。 • 喷出部745作為與位於洗淨位置的狹縫噴嘴41前端部側 面相對向之面，具有對向面745a以及一對對向面咖。對 向面745a係相當於第一實施形態中之噴出部742之對向面 鲁742a之面，如圖12所示’與第一實施形態大致相同，配置 有氣體喷嘴710以及洗淨喷嘴750。 一對對向面745b作為大致平行於對向面745a之面，設置 於對向面745a之Y軸方向之兩側。又，各對向面74%係以 成為對於洗淨位置中之狹縫喷嘴41之前端部側面，更接近 對向面745a位置之方式而形成，並分別設置有吸引口 721。介以吸引配管，吸引口 721連通連接於吸引機構μ。 圖13係表示於第二實施形態中之噴嘴洗淨處理中，清洗 # 液LQ自洗淨喷嘴75〇喷出時之情形的圖。再者，圖η中之 各部分係作為平行於χζ平面之面中，與對向面745a交叉之 面之剖面而得以表示。 圖U中，雖然圖示省略，但於本實施形態中之基座74〇 中，於處於導向組塊743下方之位置中廢液用排出口 74〇& 沿著Y軸方向設置為隙縫狀，故自排出口 740a排出藉由導 向組塊743得以導向下方之清洗液Lq。藉此，可補充吸引 機構72之吸引排出。 圖14係說明第二實施形態中之吸引機構72之作用的圖。 98458.doc -31 - 1293578 再者’圖14中之各部分作為平行於χζ平面之面中，與吸 引口 72 1父又之面之剖面而得以表示。 如圖14所示，於本實施形態中之基板處理裝置1中，由 於吸引口 721位於處於洗淨位置的狹縫喷嘴4丨之前端部側 方，因此自狹縫噴嘴41之前端部側方實施吸引機構72之吸 引。故而’作用於填充至狹縫喷嘴41内之抗蝕劑液r的吸 引機構72之吸引力將弱於自狹縫噴嘴4丨之前端部之下方實 施吸引之情形。 如此’本實施形態中之基板處理裝置1藉由將吸引口 721 設置於喷出部745之對向面745b，並自狹縫噴嘴41之前端 邛側方具轭清洗液LQ之吸引，並以噴口 4丨a之周圍大致成 為抗蝕劑液R之停滯點之方式得以調整。故而，由於即使 增加吸引機構72之吸引力，亦可抑制將抗蝕劑液以吸出至 狹缝喷嘴41外之現象之產生，因此可提高噴嘴洗淨處理之 洗淨效果。The number of scanning operations of the cleaning liquid LQ can also be set to a specific value in advance. G When the scanning operation for a certain number of times is completed, the (four) portion 8 stops the scanning operation of the cleaning portion 74 by stopping the driving mechanism 76, and controls the gas supply: the structure 71 stops the supply of the nitrogen gas. Thereby, the nitrogen gas from the gas Μ 71 停止 is stopped to dry the scanning operation of the slit nozzle 41. . By the above operation, the nozzle cleaning process of the substrate processing apparatus i in the present embodiment is completed. Further, after the nozzle cleaning process is completed, the preliminary coating process is performed in the pre-coating mechanism 73, and the form of the slit spray is adjusted to perform the final coating process. Therefore, the operation after the nozzle cleaning process is not limited thereto, and if it takes a long time to perform the formal coating process, the slit nozzle 41 can be moved to the standby position to prevent the anti-nozzle 41 from being resistant. Drying of R. That is, the drive unit 76 retracts the cleaning unit 74 from below the slit nozzle 41 and further lowers the cleaning position of the slit nozzle, and exposes the front end portion to the solvent environment in the standby box 77. In the above-described manner, as shown in FIG. 7 and the like, the substrate processing apparatus 1 of the present embodiment has the width of the nozzle 41 a of the slit nozzle 41 in the shorter direction width by the guide block 743. The thickness is disposed around the lower surface of the nozzle nozzle 41 of the slit nozzle 41, and the suction port 720 of the suction mechanism 72 is uniformly sucked from below the guide block-743 and is surrounded by the nozzle 41& The attraction force of the suction mechanism 72 is adjusted in such a manner as to become a stagnation point of the resist liquid R, whereby the cleaning liquid and the contaminant can be quickly discharged by the suction and discharge, and Φ can suppress the absorption from the discharge port 41a in the slit nozzle 41. Corrosion solution R. Further, the block 743 has a guide surface 74 for guiding the cleaning liquid LQ supplied from the cleaning liquid supply mechanism 75 to the lower side, whereby the cleaning liquid LQ to be used can be quickly discharged. Further, since the partition 741 for adjusting the supply position of the cleaning liquid LQ from the cleaning liquid supply means is provided and the washing position is changed depending on the situation, for example, even if the range of the anti-reagent liquid R is different, It can also be flexibly adapted. In addition, the adjustment of the supply position can be achieved by a separator having a specific thickness, i7, which can be easily realized without a complicated mechanism. The size of the entire device can be reduced by providing the drive mechanism 76 that allows the cleaning unit 74 to move freely along the length of the slit nozzle 41. : 'By the body supply mechanism 71 that supplies the nitrogen gas to the end portion before the slit nozzle 41, the supply port of the nitrogen gas to the mechanism 71 is again supplied from the cleaning liquid supply device, The main bait 偁 / 5 π lotion LQ supply position side, thereby promoting the drying of the washing liquid. Further, the supply of the cleaning liquid Lq from the upper cleaning nozzle + and the main mountain 1 to 75Ob is 98458.d〇 (-29-1293578, for the supply position of the cleaning liquid Lq from the lower cleaning nozzle 750a). By disposing them in a different manner, it is possible to prevent the stripe-like deposits RL (Fig. 23) from remaining on the side surface of the front end of the slit nozzle 41. Therefore, the cleaning effect can be improved. The substrate processing apparatus 1 is configured such that the lower cleaning nozzle 750a and the upper cleaning nozzle 750b can simultaneously discharge the cleaning liquid LQ. However, for example, the lower cleaning nozzle is connected to the upper cleaning nozzle 750b by piping of another system. The cleaning liquid supply mechanism 75 can also be controlled to perform only the discharge of the lower cleaning nozzle 750a in the scanning on the outgoing path (the scanning by the slit nozzle 41 of the ejection portion 742), and on the return path. In the scanning, only the discharge of the upper cleaning nozzle 750b is performed. Further, when the cleaning liquid LQ is ejected from the cleaning nozzle 750 and the scanning operation is performed, the nitrogen gas can be dispensed and dispensed. In this case, the so-called nitrogen gas curtain Formed in washing The nozzle 750 is disposed above the slit nozzle 41. The second embodiment is configured such that the suction port 72 of the suction mechanism 72 is disposed in the suction port 72 of the suction mechanism 72. Below the nozzle 4U, the cleaning liquid lq is sucked from below the guiding block 743. However, the suction position of the suction mechanism 72 (the position at which the suction port is provided) is not limited thereto. Fig. 11 is a view showing the principle according to the principle. 2 is a view showing the configuration of the nozzle cleaning mechanism 70 in the second embodiment. Fig. 12 is a front view of the opposing surface of the discharge portion in the second embodiment. ^, 杰, 杰, <, 4 k $ is a washing mechanism 70 having a washing portion 74a instead of 98458.doc -30- 1293578 in the first embodiment, in this aspect, and The nozzle cleaning mechanism 7G in the embodiment is different. The same components as those of the substrate processing apparatus in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate. The side surface of the front end portion of the slit nozzle 41 in the cleaning position The opposing surface has a facing surface 745a and a pair of opposing faces. The opposing surface 745a corresponds to the surface of the opposing surface 742a of the discharging portion 742 in the first embodiment, as shown in FIG. The first embodiment is substantially the same, and the gas nozzle 710 and the cleaning nozzle 750 are disposed. The pair of opposing faces 745b are provided on the opposite sides of the opposing surface 745a, and are provided on both sides of the opposing surface 745a in the Y-axis direction. 74% of each of the opposing faces is formed so as to be closer to the opposing side surface 745a than the front end side surface of the slit nozzle 41 in the washing position, and the suction port 721 is provided. The suction port 721 is connected to the suction mechanism μ through the suction pipe. Fig. 13 is a view showing a state in which the cleaning liquid LQ is ejected from the cleaning nozzle 75 in the nozzle cleaning process in the second embodiment. Further, each portion in the figure η is shown as a cross section of the surface parallel to the pupil plane and intersecting the opposing surface 745a. In the susceptor 74 of the present embodiment, in the susceptor 74 of the present embodiment, the waste liquid discharge port 74 〇 & is disposed in a slit shape along the Y-axis direction at a position below the guide block 743. Therefore, the cleaning liquid Lq guided to the lower side by the guiding block 743 is discharged from the discharge port 740a. Thereby, the suction discharge of the attraction mechanism 72 can be supplemented. Fig. 14 is a view for explaining the action of the suction mechanism 72 in the second embodiment. 98458.doc -31 - 1293578 Furthermore, the parts in Fig. 14 are shown as a section parallel to the plane of the pupil and a profile of the face of the suction port 72 1 . As shown in FIG. 14, in the substrate processing apparatus 1 of the present embodiment, since the suction port 721 is located on the side of the end portion before the slit nozzle 4 that is in the cleaning position, the front end side of the slit nozzle 41 is laterally The attraction of the attraction agency 72 is implemented. Therefore, the suction force of the suction mechanism 72 acting on the resist liquid r filled in the slit nozzle 41 will be weaker than the case where the suction is performed from the lower end portion of the slit nozzle 4丨. In the substrate processing apparatus 1 of the present embodiment, the suction port 721 is provided on the opposite surface 745b of the discharge portion 745, and the yoke cleaning liquid LQ is sucked from the front end side of the slit nozzle 41, and The manner in which the periphery of the nozzle 4丨a substantially becomes the stagnation point of the resist liquid R is adjusted. Therefore, even if the attraction force of the suction mechanism 72 is increased, the phenomenon that the resist liquid is sucked out of the slit nozzle 41 can be suppressed, so that the cleaning effect of the nozzle cleaning process can be improved.

又對向面74%與對向面745a相比，更接近於狹縫喷嘴 41之前端部側面。故而，如將圖13與圖14加以比較則可明 瞭，吸引口 721係以與洗淨噴嘴75〇相比，更接近於狹缝喷 嘴41之前端部側面之方式配置。如此，藉由吸引口 721接 近於狹縫噴嘴41之前端部側面，可有效吸引排出附著於該 前端部側面之清洗液LQ。 再者，圖14中為方便圖示，表示導向組塊743周圍是否 存在清洗液LQ，但實際上於洗淨部74a之兩端部中用於洗 淨的清洗液LQ之一部分係藉由導向組塊743導向下方，並 98458.doc -32- 1293578 自排出口 740a排出。 如上所述，由於即使於第二實施形態中之基板處理裝置 • 1中，亦將吸引口 721設置於狹縫喷嘴41之前端部側方，並 •自該位置實施由吸引機構72引起之吸引，藉此與第一實施 fly怨中之基板處理裝置1相同，可以喷口 41 a之周圍大致成 為抗I虫劑液R之停滯點之方式加以調整，故而可獲得相同 效果。 又，由於藉由自設置於狹縫喷嘴41之前端部下方的排出 口 740a排出清洗液LQ，可不需依賴於吸引機構”而排出清 洗液LQ，因此可採用小容量機構作為吸引機構72。或， 由於可迅速排出清洗液Lq，故而可提高噴嘴洗淨處理之 洗淨效果。 又，藉由具備配置於狹縫喷嘴41之前端部下方，將清洗 液LQ導向下方且具有接近面74以以及導向面科扑的導向組 塊743，可自排出口 74〇a更有效排出清洗液lq。Further, the facing surface 74% is closer to the front side surface of the slit nozzle 41 than the opposing surface 745a. Therefore, as compared with Fig. 13 and Fig. 14, it is understood that the suction port 721 is disposed closer to the front end side surface of the slit nozzle 41 than the cleaning nozzle 75A. In this manner, the suction port 721 is brought close to the front end side surface of the slit nozzle 41, so that the cleaning liquid LQ adhering to the side surface of the front end portion can be effectively sucked and discharged. Further, in FIG. 14, for convenience of illustration, it is shown whether or not the cleaning liquid LQ is present around the guiding block 743, but actually, a part of the cleaning liquid LQ for cleaning in the both end portions of the cleaning portion 74a is guided. Block 743 is directed downward and 98458.doc -32-1293578 is discharged from discharge port 740a. As described above, even in the substrate processing apparatus 1 of the second embodiment, the suction port 721 is provided on the side of the end portion before the slit nozzle 41, and the suction by the suction mechanism 72 is performed from this position. Thus, similarly to the substrate processing apparatus 1 of the first embodiment, the same effect can be obtained by adjusting the periphery of the nozzle 41a so as to substantially become the stagnation point of the insect repellent liquid R. Further, since the cleaning liquid LQ is discharged from the discharge port 740a provided below the end portion of the slit nozzle 41, the cleaning liquid LQ can be discharged without depending on the suction mechanism. Therefore, a small-capacity mechanism can be employed as the suction mechanism 72. Since the cleaning liquid Lq can be quickly discharged, the cleaning effect of the nozzle cleaning process can be improved. Further, by providing the lower portion of the end portion before the slit nozzle 41, the cleaning liquid LQ is guided downward and has a proximity surface 74. The guiding block 743 of the guiding surface can effectively discharge the cleaning liquid lq from the discharge port 74〇a.

再者’如圖11所示，本實施形態中之基板處理裝置1並 未使用分隔物741。即 藉由洗淨喷嘴750期望之高度位 置，分隔物741並非係必須使用之構件亦可卸除。於本實 施形態中之洗淨部74at，藉由分隔物741調整噴出部 之高度’藉此亦可調整吸引σ721與狹缝喷嘴41之前端部 側面間之距離。該情形時’較好的是將該距離調整為 至5 mm左右。 於本實施形態中之基板處理裝置工中，使用有與第一實 施謝之基板處理裝置!相同之導向組塊…。然而，本 98458.doc -33- 1293578 實施形態中，由於並未自排出口 740a實施吸引排出，因此 自排出口 740a主要藉由重力作用排出清洗液Lq。藉此，作 • 用於噴口 41&amp;之（-Z)方向之力量（成為吸出抗蝕劑液r之原因 ^ - 的力量）主要為重力。故而，即使導向組塊743為X軸方向 • 厚度較薄之板狀構件，其亦可以喷口 41 a之周圍大致成為 抗鍅劑液R之停滞點之方式加以調整。 &lt;3·第三實施形態&gt; φ 由說明可知上述實施形態之喷嘴洗淨機構70係藉由噴出 洗淨液並且掃描狹縫喷嘴4丨之機構（洗淨部74以及驅動機 構76)實施喷嘴洗淨處理，然而實施喷嘴洗淨處理之機構 如若係可將狹縫噴嘴41之喷口 41a之周邊於Y軸方向均勻洗 淨者’則將不僅限於此。 圖15係表示根據如此之原理而構成之第三實施形態中之 噴出部746與位於洗淨位置之狹縫喷嘴41之配置關係的 圖。自圖15可知悉，本實施形態中之喷出部746的丫軸方向 • 尺寸大致與狹縫喷嘴41之噴口 41a的Y軸方向寬度相等。再 者，雖然未具體圖示，但與此相同，基座74〇、分隔物741 以及導向組塊7U之Y軸方向之尺寸亦根據喷口 41&amp;之丫軸 方向寬度而決定。 即，第三實施形態中之基板處理裝置丨之洗淨部7仆具有 與狹縫喷嘴41之喷口 41aiY軸方向寬度大致相等尺寸，於 此方面係與第一實施形態中之基板處理裝置丨之洗淨部74 有所不同。再者’關於洗淨部74b以外之構成，因與第一 貫施形悲中之基板處理裝置1大致相同，故而適當省略說 98458.doc -34- 1293578 明。 圖16係第三實施形態中之噴出部746之對向面 •視圖^於對向面7術配置有氣體喷嘴71〇以及洗淨ζ = ..750。氣體噴嘴71〇於對向面746&amp;中，以橫跨γ轴方向之入 部寬度之方式，排列於成為洗淨喷嘴75〇之上方沾“之王 置。又，洗淨喷嘴75。中之上方洗淨喷嘴75。::= 7輪中^以橫跨Y軸方向之全部寬度之方式，排列於 ^ 下方洗/爭噴嘴乃0a之上方的高度位置。 就具有如上所述之構成的本實施形態中之噴嘴洗淨處 理’加以簡單說明。首先，洗淨液供給機構75開始供給清 洗液LQ，朝向位於洗淨位置之狹縫噴嘴“之前端部，2 部洗淨喷嘴750喷出清洗液LQ。與該動作並行，吸引機構 72開始吸引。 藉此，洗淨狹縫喷嘴41之前端部。由於本實施形態中之 洗淨喷嘴750係以大致橫跨狹縫噴嘴4丨之丫軸方向全部寬度 馨之方式設置，因此關於該前端部之全部區域將大致同時進 行洗淨處理。又，如上述實施形態中所述，無需實施藉由 驅動機構76使洗淨部74b沿著噴口 41a移動之動作（掃描動 作）。該情形於噴出氮氣體之處理（後述）中亦為同樣。即， 狹縫噴嘴41自洗淨位置移動至待機位置時，第三實施形態 中之驅動機構76僅具有使洗淨部74b退避之功能。 又，與第一實施形態相同，用於喷嘴洗淨處理之清洗液 [卩係藉由導向組塊743之接近面743a以及導向面743b而得 以向下方引導，並且藉由吸引機構72之吸引力得以迅速吸 98458.doc -35- 1293578 引排出。 即使於本實施形態巾之基板處理裝置1中，亦為喷口41a •猎由導向組塊743而得以覆蓋之狀態，且設為吸引機構72 、之吸引力並不直接作用於喷口仏。即，亦可以噴口❻周 . 圍大致成為抗蝕劑液R之停滯點之方式加以調整。 於洗淨喷嘴75G開始喷出並經過特定時間後，則洗淨液 供給機構75停止供給清洗液£(^，故而來自洗淨噴嘴75〇之 _ 清洗液LQ之喷出亦將停止。 其次，氣體供給機構71開始供給氮氣體，朝向狹縫喷嘴 41之前端部，全部氣體噴嘴71〇將喷出氮氣體。藉此，促 進附著於狹縫噴嘴41之前端部的清洗液LQ之乾燥。再 者，於供給來自氣體供給機構71之氮氣體期間，由吸引機 構72引起之吸引亦將繼續，因而例如包含清洗液[卩成分 之環境，或藉由氮氣體吹跑的清洗液Lq之薄霧等將迅速 得到吸引排出。 • 於氣體喷嘴71〇開始噴出並經過特定時間後，則氣體供 給機構71將會停止供給氮氣體，故喷出來自氣體喷嘴7 j 〇 之氮氣體之處理亦將停止。藉此，本實施形態中之喷嘴洗 淨處理將結束。 如此’於本貫施形恶中之基板處理裝置1中，關於狹縫 贺嘴41之Y轴方向將同時貫施嘴嘴洗淨處理之各步驟。故 而，可提高喷嘴洗淨處理中之Y軸方向之均一性，從而使 洗淨後之狹縫噴嘴41之狀態均一化於Y軸方向。 如上所述’即使於第三實施形態中之基板處理裝置1， 98458.doc •36- 1293578 亦與第-實施形態相同’可以狹縫喷嘴心之喷口化大致 成為抗餘劑液R之停潘點 ”·，之方式’凋整吸引機構72之吸引 力，因而可獲得與上述實施形態相同之效果。 又，洗甲部74b(喷出部746)具有與狹縫喷嘴“之喷口❾ 之γ軸方向寬度大致相同尺寸，於噴出部746中以橫跨喷口 41a之：部寬度之方式配置有氣體喷嘴以及洗淨噴嘴 750 ’藉此可於橫跨狹縫噴_之全部寬度同時喷出清洗 液LQ。0此可縮短喷嘴洗淨處理戶斤需之時間。 &lt;4·變形例&gt; 以上，雖就本發明之實施形態加以說明n發明並非 限定於上述實施形態，亦可實施各種變更。 例如’如第二實施形態中之基板處理裳置w，可採用 自狹縫喷嘴41之噴口 41_方吸引清洗的構造，並且 如第三實施形態中之基板處理裝置W，亦可採用同時洗 淨喷口 4U之Y軸方向之大致全部寬度的構造。於該情形 籲時，於噴出部746之對向面7463中，亦可於下方洗淨喷嘴 750a之進而下方位置設置連通連接於吸引機構72的吸引 口。又，該情形時，較好的是將該吸引口設為沿著γ轴方 向延伸之隙縫狀。 又，於第一實施形態中之喷出部742中，於對向面Μ。 之Y軸方向兩側設置有下方洗淨喷嘴750a，而於對向面 742a之Y軸方向中央部則設置有上方洗淨噴嘴^的，作先 淨噴嘴750之配置並非限定於如此之配置。 ' i 圖1 7係變形例 中之噴出部742之對向面742a的正視圖。如此般，亦了於 98458.doc -37- 1293578 對向面742aiY軸方向兩側設置上方洗淨噴嘴75肋.，而於 對向面742a之Y軸方向中央部設置下方洗淨噴嘴75〇a。 考 又，亦可使下方洗淨喷嘴750a之Y軸方向位置，盥上方 .·洗淨喷嘴乃〇b之Y軸方向位置一致。即，亦可於喷出部 742、745、746中，於下方洗淨噴嘴75如之正上方配置上 方洗淨喷嘴750b。 又，氣體噴嘴7丨0以及洗淨喷嘴75〇之開口部形狀並非限 • 定於圓形，亦可具有延伸於Y軸方向之隙縫狀之形狀。 【圖式簡單說明】 圖1係表示本發明之基板處理裝置的立體圖。 圖2係表示基板處理裝置中之塗佈處理之相關主要構成 的側視圖。 圖3係表示第一實施形態中之噴嘴洗淨機構之構成的 圖。 圖4係第一實施形態中之噴出部之對向面的正視圖。 籲 圖5係表示導向組塊的立體圖。 圖6係一併表示狹縫喷嘴與噴出部移動之情況的圖。 圖7係表示開始喷嘴洗淨處理時之各構成配置的圖。 圖8係表示噴嘴洗淨處理中清洗液處於噴出狀態之情形 的圖。 圖9係表示喷嘴洗淨處理中氮氣體處於噴出狀態之情形 的圖。 圖1 〇係擴大表示圖8之狀態的圖。 圖11係表示第二實施形態中之噴嘴洗淨機構之構成的 98458.doc -38- 1293578 圖12係第二實施形態中之噴出部之對向面的正視圖。 • 圖13係表示第二實施形態中清洗液處於噴出狀態 .·的圖。 t - 圖14係說明第二實施形態中之吸引機構之作用的圖。 圖15係表示第三實施形態中之噴出部與位於洗淨位置之 狹縫喷嘴之位置關係的圖。 • 圖Μ係第三實施形態中之噴出部之對向面的正視圖。 圖17係變形例中之噴出部之對向面的正視圖。 圖18係表示狹縫喷嘴之前端部之初始狀態的圖。 圖19係表示對數十牧左右之基板實施塗佈處理之狀態的 圖。 圖20係表示對數百牧左右之基板實施塗佈處理之狀態的 圖。 圖21係表示於先前之基板處理裝置之喷出喷嘴中，於抗 • 蝕劑液被吸出之部分中混入有空氣之狀態的圖。 圖22係表示於先前之基板處理裝置之喷出喷嘴中，於抗 1虫劑液被吸出之部分中混入有洗淨液（清洗液）之狀態的 圖。 圖23係表示於先前之基板處理裝置中，喷嘴洗淨處理後 所觀察到之條紋狀附著物的圖。 【主要元件符號說明】 1 基板處理裝置 2 本體 98458.docFurther, as shown in Fig. 11, the substrate processing apparatus 1 of the present embodiment does not use the partition 741. That is, by the desired height position of the cleaning nozzle 750, the partition 741 can be removed without being a member that must be used. In the cleaning portion 74at of the present embodiment, the height □ of the discharge portion is adjusted by the partition 741, whereby the distance between the suction σ721 and the front end portion of the slit nozzle 41 can be adjusted. In this case, it is preferable to adjust the distance to about 5 mm. In the substrate processing apparatus according to the present embodiment, the same guide block as that of the first substrate processing apparatus! However, in the embodiment 98458.doc - 33 - 1293578, since the suction and discharge are not performed from the discharge port 740a, the discharge port 740a mainly discharges the cleaning liquid Lq by gravity. By this, the force in the (-Z) direction of the nozzle 41 &amp; (the force which is the cause of sucking out the resist liquid r) is mainly gravity. Therefore, even if the guide block 743 is a plate-shaped member having a thin thickness in the X-axis direction, it can be adjusted so that the periphery of the spout 41a substantially becomes a stagnation point of the anti-caries liquid R. &lt;3. Third embodiment&gt; φ It is to be understood that the nozzle cleaning mechanism 70 of the above embodiment is implemented by a mechanism (cleaning unit 74 and drive mechanism 76) that discharges the cleaning liquid and scans the slit nozzle 4丨. In the nozzle cleaning process, the mechanism for performing the nozzle cleaning process is not limited to this if the periphery of the nozzle 41a of the slit nozzle 41 can be uniformly washed in the Y-axis direction. Fig. 15 is a view showing the arrangement relationship between the discharge portion 746 and the slit nozzle 41 located at the cleaning position in the third embodiment constructed according to such a principle. As is apparent from Fig. 15, in the present embodiment, the size of the discharge portion 746 is substantially equal to the width of the nozzle 41a of the slit nozzle 41 in the Y-axis direction. Further, although not specifically illustrated, the dimensions of the susceptor 74, the partition 741, and the guide block 7U in the Y-axis direction are also determined according to the width of the nozzle 41 &amp; In other words, the cleaning unit 7 of the substrate processing apparatus according to the third embodiment has a size substantially equal to the axial width of the nozzle 41ai of the slit nozzle 41, and is related to the substrate processing apparatus of the first embodiment. The cleaning unit 74 is different. Further, the configuration other than the cleaning unit 74b is substantially the same as that of the substrate processing apparatus 1 in the first embodiment, and therefore, 98458.doc-34-1293578 is omitted as appropriate. Fig. 16 is a view showing the opposing surface of the discharge portion 746 in the third embodiment. The view is provided with a gas nozzle 71 〇 and a cleaning ζ = .. 750 on the opposite surface 7. The gas nozzle 71 is disposed on the opposing surface 746 &amp; aligning the width of the entrance portion in the γ-axis direction so as to be positioned above the cleaning nozzle 75 沾. The cleaning nozzle 75 is also placed above. The cleaning nozzles 75::== 7 rounds are arranged at a height position above the lower washing/dissipating nozzles 0a so as to straddle the entire width in the Y-axis direction. The present embodiment having the above configuration The nozzle cleaning process in the form will be briefly described. First, the cleaning liquid supply mechanism 75 starts supplying the cleaning liquid LQ, and ejects the cleaning liquid toward the front end portion of the slit nozzle "located at the cleaning position". LQ. In parallel with this action, the attraction mechanism 72 starts to attract. Thereby, the front end portion of the slit nozzle 41 is washed. Since the cleaning nozzle 750 in the present embodiment is provided so as to extend substantially across the entire width of the slit nozzle 4'''''''''''' Further, as described in the above embodiment, it is not necessary to perform an operation (scanning operation) of moving the cleaning portion 74b along the discharge port 41a by the drive mechanism 76. This case is also the same in the treatment (described later) of discharging the nitrogen gas. That is, when the slit nozzle 41 is moved from the washing position to the standby position, the drive mechanism 76 in the third embodiment has only a function of retracting the washing portion 74b. Further, similarly to the first embodiment, the cleaning liquid for the nozzle cleaning process is guided downward by the approach surface 743a and the guide surface 743b of the guide block 743, and is attracted by the attraction mechanism 72. Can be quickly sucked out 98458.doc -35-1293578. Even in the substrate processing apparatus 1 of the present embodiment, the nozzle 41a is covered by the guide block 743, and the attraction mechanism 72 is used, and the suction force does not directly act on the nozzle port. In other words, it is also possible to adjust the circumference of the stagnation point of the resist liquid R. When the cleaning nozzle 75G starts to eject and a predetermined time elapses, the cleaning liquid supply mechanism 75 stops supplying the cleaning liquid (^, so that the ejection from the cleaning nozzle 75 is stopped.) The gas supply mechanism 71 starts to supply the nitrogen gas, and the gas nozzle 71 is discharged toward the front end portion of the slit nozzle 41, whereby the nitrogen gas is ejected, thereby promoting the drying of the cleaning liquid LQ adhering to the end portion of the slit nozzle 41. During the supply of the nitrogen gas from the gas supply mechanism 71, the suction caused by the suction mechanism 72 will continue, and thus, for example, the cleaning liquid [the environment of the enthalpy component, or the mist of the cleaning liquid Lq blown by the nitrogen gas) If the gas nozzle 71 starts to eject and after a certain period of time has elapsed, the gas supply mechanism 71 will stop supplying the nitrogen gas, so that the treatment of the nitrogen gas from the gas nozzle 7 j 亦 will also stop. Thereby, the nozzle cleaning process in the present embodiment is completed. Thus, in the substrate processing apparatus 1 in the present embodiment, the Y-axis direction of the slit nozzle 41 is simultaneously applied to the nozzle. Each step of the cleaning process is performed, so that the uniformity in the Y-axis direction in the nozzle cleaning process can be improved, and the state of the slit nozzle 41 after washing can be made uniform in the Y-axis direction. The substrate processing apparatus 1 of the third embodiment, 98458.doc • 36- 1293578 is also the same as the first embodiment. 'The nozzle opening of the slit nozzle core can be substantially the stopping point of the anti-reagent liquid R. The attraction force of the suction mechanism 72 is increased, and the same effect as that of the above embodiment can be obtained. Further, the nail portion 74b (discharge portion 746) has substantially the same size as the width of the slit nozzle "the γ-axis direction of the nozzle". In the discharge portion 746, the gas nozzle and the cleaning nozzle 750' are disposed so as to straddle the width of the portion of the nozzle 41a, whereby the cleaning liquid LQ can be simultaneously ejected across the entire width of the slit spray. The time required for the nozzle cleaning treatment is as follows. <4. Modifications> The above description of the embodiments of the present invention is not limited to the above embodiment, and various modifications can be made. For example, 'the second embodiment In the form The plate processing skirt w can be configured to be sucked and cleaned from the nozzle 41_ of the slit nozzle 41, and as in the substrate processing apparatus W of the third embodiment, the Y-axis direction of the nozzle 4U can be simultaneously washed. In this case, in the opposite surface 7463 of the discharge portion 746, a suction port that is connected to the suction mechanism 72 may be provided at a position below the lower cleaning nozzle 750a. Further, in this case, Preferably, the suction port is formed in a slit shape extending in the γ-axis direction. Further, in the discharge portion 742 of the first embodiment, the opposite surface is provided on both sides in the Y-axis direction. The lower cleaning nozzle 750a is provided in the lower direction, and the upper cleaning nozzle is provided in the central portion of the opposing surface 742a in the Y-axis direction. The arrangement of the first cleaning nozzle 750 is not limited to such an arrangement. ' i Fig. 1 is a front view of the opposing surface 742a of the discharge portion 742 in the modification of the seventh embodiment. In the same manner, the upper cleaning nozzle 75 rib is provided on both sides of the 742ai Y-axis direction of the opposite surface in the opposite direction 742ai, and the lower cleaning nozzle 75 〇a is provided in the central portion of the opposite surface 742a in the Y-axis direction. . Further, the position of the lower cleaning nozzle 750a in the Y-axis direction may be set to the upper side. The cleaning nozzle is in the same position as the Y-axis direction of the b. In other words, in the discharge portions 742, 745, and 746, the upper cleaning nozzles 750b may be disposed directly above the lower cleaning nozzles 75. Further, the shape of the opening of the gas nozzle 7丨0 and the cleaning nozzle 75〇 is not limited to a circular shape, and may have a shape extending in a slit shape extending in the Y-axis direction. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a substrate processing apparatus of the present invention. Fig. 2 is a side view showing the main configuration of the coating process in the substrate processing apparatus. Fig. 3 is a view showing the configuration of a nozzle cleaning mechanism in the first embodiment. Fig. 4 is a front elevational view showing the opposing surface of the discharge portion in the first embodiment. Figure 5 is a perspective view showing the guide block. Fig. 6 is a view showing a state in which the slit nozzle and the discharge portion are moved together. Fig. 7 is a view showing each configuration of the nozzle washing process. Fig. 8 is a view showing a state in which the cleaning liquid is in a discharge state in the nozzle cleaning process. Fig. 9 is a view showing a state in which the nitrogen gas is in a discharge state in the nozzle cleaning process. Fig. 1 is a diagram showing the state of Fig. 8 in an enlarged manner. Fig. 11 is a view showing the configuration of the nozzle cleaning mechanism in the second embodiment. 98458.doc - 38-1293578 Fig. 12 is a front view showing the opposing surface of the discharge portion in the second embodiment. Fig. 13 is a view showing a state in which the cleaning liquid is in a discharge state in the second embodiment. t - Fig. 14 is a view for explaining the action of the suction mechanism in the second embodiment. Fig. 15 is a view showing the positional relationship between the discharge portion and the slit nozzle at the cleaning position in the third embodiment. • Fig. 3 is a front view of the opposing surface of the discharge portion in the third embodiment. Fig. 17 is a front elevational view showing the opposing surface of the discharge portion in the modification. Fig. 18 is a view showing an initial state of the front end portion of the slit nozzle. Fig. 19 is a view showing a state in which a coating process is performed on a substrate on the left and right sides of the grazing. Fig. 20 is a view showing a state in which a coating process is performed on a substrate of a few hundred or so. Fig. 21 is a view showing a state in which air is mixed in a portion where the anti-corrosive liquid is sucked out in the discharge nozzle of the substrate processing apparatus. Fig. 22 is a view showing a state in which a cleaning liquid (washing liquid) is mixed in a portion where the anti-insulin liquid is sucked out in the discharge nozzle of the substrate processing apparatus. Fig. 23 is a view showing the striped deposit observed after the nozzle cleaning treatment in the prior substrate processing apparatus. [Main component symbol description] 1 Substrate processing device 2 Main body 98458.doc

(S 39- 1293578(S 39- 1293578

3 5 6 7 8 30 41 41a 43, 44 70 71 72 平臺 移動機構 抗蝕劑供給機構 喷嘴初始化機構 控制部 保持面 狹縫喷嘴 喷口 升降機構 喷嘴洗淨機構 氣體供給機構 吸引機構3 5 6 7 8 30 41 41a 43, 44 70 71 72 Platform Moving mechanism Resist supply mechanism Nozzle initialization mechanism Control section Holding surface Slot nozzle Nozzle Lifting mechanism Nozzle cleaning mechanism Gas supply mechanism Attraction mechanism

74, 74a，74b 75 76 77 90 洗淨部 洗淨液供給機構 驅動機構（掃描機構） 待機盒 基板 710 710a 710b 720, 721 740a 741 742, 745, 746 氣體喷嘴 下方氣體噴嘴 上方氣體喷嘴 吸引口 排出口 分隔物 喷出部 98458.doc -40- 1293578 m74, 74a, 74b 75 76 77 90 Washing unit cleaning mechanism drive mechanism (scanning mechanism) Standby box substrate 710 710a 710b 720, 721 740a 741 742, 745, 746 Gas nozzle suction port row above the gas nozzle below the gas nozzle Outlet partition spout 98458.doc -40- 1293578 m

742a，745a，745b，746a 743 743a 743b 750 750a 750b742a, 745a, 745b, 746a 743 743a 743b 750 750a 750b

LQ R 對向面 導向組塊（遮斷構件， 接近面 導向面 洗淨喷嘴 下方洗淨喷嘴 上方洗淨喷嘴 清洗液 抗蝕劑液 引導構件）LQ R Opposite guide block (interrupting member, approach surface guide surface Wash nozzle Lower cleaning nozzle Upper cleaning nozzle Cleaning solution Resist fluid Guide member)

98458.doc - 41 -98458.doc - 41 -

Claims (1)

1293578 十、申請專利範圍： h 一種喷嘴洗淨裝置，其特徵在於：其係洗淨自設置於前 端部之嗔口噴出特定處理液之喷出喷嘴者，且具備： 朝向上述噴出噴嘴之箭 ^ ， 、 而口P附近，自噴口供給特定洗 淨液之洗淨液供給機構；及 ^吸引口吸引藉由上述洗淨液供給機構所供給之上述 特定洗淨液之吸引機構； 述吸引機構之吸引力，使上述噴口附近成為上 述特疋處理液之大略停滯點。 2·如請求们之噴嘴洗淨裝置，其中進而具備： 遮蔽構件’其具有上述噴出喷嘴之喷口之短邊方向寬 又以上之厚度，且配置於上述喷出噴嘴之喷口下方附 近； 上，吸引機構之吸引口自上述遮斷構件之下方進行吸 二：:調整上述喷出噴嘴之喷口附近的上述吸引機構 I :明求項2之噴嘴洗淨裝置，其中上述遮蔽構件具有導 &quot; β亥導向面係將藉由上述洗淨液供給機構所供給之 上述特定洗淨液導向下方者。 t明求項1之喷嘴洗淨裝置，其中上述吸引機構自上述 贺出Μ之前端部側方進行吸引，藉此調整 5嘴：噴口附近的上述吸引機構之吸引力。 H 口 2求項4之喷嘴洗淨裝置，其中上述吸引機構之吸引 #乂上述洗淨液供給機構之喷口更接近配置於上述噴出 98458.doc 1293578 喷嘴。 6.如請求項4之噴嘴洗淨裝置，且 嘴之前端部下方的排出口排出=自設置於上述喷出喷 所供給之上述特定洗淨液㈣上述洗淨液供給機構 7.如請求項6之嘴嘴洗淨 喷出噴嘴之前端部下方導：進而具備配置於上述 導向面係將藉由上述洗淨液1293578 X. Patent application scope: h A nozzle cleaning device characterized in that it is washed from a nozzle provided at a tip end portion to eject a specific processing liquid, and has: an arrow toward the ejection nozzle ^ And a cleaning liquid supply mechanism for supplying a specific cleaning liquid from the discharge port in the vicinity of the port P; and a suction mechanism for sucking the specific cleaning liquid supplied by the cleaning liquid supply mechanism; and the suction mechanism The attraction is such that the vicinity of the spout is a substantial stagnation point of the above-mentioned special treatment liquid. 2. The nozzle cleaning device of the present invention, further comprising: a shielding member having a thickness in a short side direction of the nozzle of the discharge nozzle and having a thickness equal to or larger than a width of the nozzle of the discharge nozzle; and being disposed near a lower portion of the discharge nozzle; The suction port of the mechanism is sucked from the lower side of the blocking member: the suction mechanism I is adjusted in the vicinity of the nozzle of the discharge nozzle: the nozzle cleaning device of the item 2, wherein the shielding member has a guide &quot; The guide surface guides the specific cleaning liquid supplied by the cleaning liquid supply mechanism to the lower side. The nozzle cleaning device of claim 1, wherein the suction means sucks from the side of the front end before the heel exit, thereby adjusting the suction force of the suction means in the vicinity of the nozzle. H nozzle 2 The nozzle cleaning device of claim 4, wherein the suction of the suction mechanism is closer to the nozzle of the discharge 98458.doc 1293578. 6. The nozzle cleaning device of claim 4, wherein the discharge port below the front end of the nozzle is discharged = the specific cleaning liquid supplied from the discharge spray (4) the cleaning liquid supply mechanism 7. 6 mouth nozzle cleaning nozzle before the end of the lower end guide: further comprising the arrangement of the guide surface system by the above cleaning liquid 洗淨液導向下方者。 “機構所供給之上述特定 進而具備調整上述洗 之位置之調整機構。 上述調整機構係具有 8·如請求項1之喷嘴洗淨裝置，其中 淨液供給機構供給上述特定洗淨液 9·如請求項8之噴嘴洗淨裝置，其中 特定厚度之分隔物。 其中上述喷出喷嘴之喷口 1 〇·如請求項1之喷嘴洗淨裝置 係延伸於特定方向之隙縫；The cleaning liquid is directed to the lower one. The above-mentioned specificity supplied by the mechanism further includes an adjustment mechanism for adjusting the position of the washing. The adjustment mechanism has the nozzle cleaning device of claim 1, wherein the cleaning liquid supply means supplies the specific cleaning liquid. The nozzle cleaning device of item 8, wherein the nozzle of the specific thickness is the nozzle of the ejection nozzle, wherein the nozzle cleaning device of claim 1 is a slit extending in a specific direction; 且進而具備使上述洗淨液供給 移動的掃描機構。 機構沿著上述特定方向 11 12. 如請求項1之喷嘴洗淨裝置，其中上述喷出噴嘴之喷 係延伸於特定方向之隙縫； 上述，淨液供給機構係遍及上述噴出嘴嘴之前端部之 上述特定方向纟寬，錢同時供給上料定洗淨液。 ::求項1之喷嘴洗淨裝置，其中進而具備將特定氣體 、、°至上述噴出噴嘴之前端部的氣體供給機構； ”上述氣體供給機構供給上述特定氣體之位置較上述洗 爭液（、、、、5機構供給上述特定洗淨液之位置更上方。 98458.doc !293578 13· ^種噴嘴洗淨裝置’其特徵在於：其係洗淨自設置 w之噴口噴出特定處理液之喷出喷嘴者，且且備.、 、、朝向上述喷㈣嘴之前端部附近，供給特定洗 洗淨液供給機構；及 / 吸引精由上述洗淨液供給機構所供給 液的吸引機構； 上这特疋洗净 上述洗淨液供給機構具備： 冷灵數個朝向上哈φ &amp; &amp; ㈣出讀之前端部W上述特定洗淨 液之洗淨喷嘴； 义行疋，无/尹 將上述複數個洗淨噴嘴中至少一 特定洗淨液之位置以槲热甘 贾_仏、、，〇上述 淨液之位置，在〇 洗料嘴供給上述特定洗 , 向又方向不同之方式配置。 •了板處理裝置，其特徵在於：其 疋處理液者，且具備： 土师特 保持基板之保持機構； 自設置於前端部之嗔 機構保持之基板辛二”出特定處理液至被上述保持 板表面的贺出噴嘴；及 洗淨上述噴出噴嘴之噴嘴洗淨裝置； 上述噴嘴洗淨裝置具備·· 朝向上述噴出嘖喈 &amp; 啡、^ 、 則柒部附近，供給特定洗淨液之 冼淨液供給機構；及 從又 ^引精由上料淨液供給機制供給之上 液的吸引機構； 吁疋洗✓尹 調整上述吸引機構之 及引力，使上述噴口附近成為上 98458.doc 1293578 述特定處理液的大略停滯點。 15. —種基板處理裝置， &quot;特徵在於：其係於基板上塗佑 • 定處理液者，且具備： 土佈特 保持基板之保持機構· ' 自。又置於别、部之噴口噴出特定處理液至 機構保持之基板表面的噴出噴嘴；及 这保持 洗淨上述噴出噴嘴之喷嘴洗淨裝置； • 上述喷嘴洗淨裝置具備： 朝向上述噴出嘖喈夕a❿a 〆 _之則端部附近，供給特定 洗淨液供給機構； 淨液之 吸引藉由上述洗淨液供給機構所供給之上 液的吸引機構； 疋洗/尹 上述洗淨液供給機構具備·· 複數個朝向上述噴出噴嘴之前端部喷出 液之洗淨噴嘴； &lt; 付疋冼平 特數個洗淨喷嘴中至少-個洗淨噴嘴供給上述 特疋洗甲液之位置以與其他洗淨喷嘴供 液之位置在高度方向不同之方式配置。”寺定洗淨 98458.docFurther, a scanning mechanism for moving the cleaning liquid is provided. 12. The nozzle cleaning device according to claim 1, wherein the spray nozzle of the discharge nozzle extends in a slit in a specific direction; and the liquid supply mechanism is disposed at a front end of the discharge nozzle. The above specific direction is wide, and the money is supplied to the cleaning liquid at the same time. The nozzle cleaning device of claim 1, further comprising: a gas supply mechanism for supplying a specific gas to an end portion of the discharge nozzle; wherein the gas supply mechanism supplies the specific gas at a position higher than the wash solution ( The position of the above-mentioned specific cleaning liquid is higher than the position of the above-mentioned specific cleaning liquid. 98458.doc !293578 13·^The nozzle cleaning device is characterized in that it is sprayed from the nozzle of the setting w to eject the specific treatment liquid. a nozzle, and a supply mechanism for supplying a specific cleaning liquid supply mechanism toward the vicinity of the front end portion of the nozzle (four) nozzle; and a suction mechanism for attracting the liquid supplied by the cleaning liquid supply mechanism;疋Washing the above-mentioned cleaning liquid supply mechanism includes: a plurality of cleaning nozzles for the above-mentioned specific cleaning liquid at the end portion before the reading of the cold φ &amp;&amp; (4) The position of at least one specific cleaning liquid in each of the cleaning nozzles is set to the position of the above-mentioned cleaning liquid at the position of the cleaning liquid, and the specific washing is supplied to the washing nozzle, and is arranged in a different direction. The plate processing apparatus is characterized in that: the 疋 treatment liquid includes: a holder for holding the substrate by the earthen; and a substrate held by the 嗔 mechanism provided at the front end portion to discharge the specific treatment liquid to the surface of the holding plate a nozzle for cleaning the nozzle; and a nozzle cleaning device for cleaning the nozzle; the nozzle cleaning device includes a cleaning solution for supplying a specific cleaning liquid toward the vicinity of the sputum, the sputum, and the sputum The supply mechanism; and the suction mechanism for supplying the upper liquid from the feeding mechanism of the feeding liquid; 疋 疋 ✓ ✓ Yin adjusts the attraction of the attraction mechanism, so that the vicinity of the nozzle becomes the upper 98458.doc 1293578 A general stagnation point of the liquid. 15. A substrate processing apparatus, &quot;characteristics: it is attached to the substrate to apply the treatment liquid, and has: the holder of the earthenware holding substrate · 'self. a nozzle for ejecting a specific treatment liquid to the surface of the substrate held by the mechanism; and a nozzle cleaning device for cleaning the ejection nozzle; The nozzle cleaning device includes: a supply of a specific cleaning liquid supply means in the vicinity of an end portion of the discharge chamber ❿ a❿a 〆 _; and suction of the cleaning liquid by the cleaning liquid supply mechanism The washing liquid supply mechanism includes: a plurality of washing nozzles that discharge the liquid toward the end portion of the discharge nozzle; &lt; at least one of the cleaning nozzles The position at which the nozzle supplies the above-mentioned special nail-washing liquid is arranged in such a manner that the position of the liquid supply from the other washing nozzle is different in the height direction." The temple is washed 98458.doc
TW094101573A 2004-03-19 2005-01-19 Nozzle cleaning apparatus and substrate processing apparatus TWI293578B (en)

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KR100642666B1 (en) 2006-11-10

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