TWI265217B - Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal - Google Patents

Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal

Info

Publication number
TWI265217B
TWI265217B TW092131766A TW92131766A TWI265217B TW I265217 B TWI265217 B TW I265217B TW 092131766 A TW092131766 A TW 092131766A TW 92131766 A TW92131766 A TW 92131766A TW I265217 B TWI265217 B TW I265217B
Authority
TW
Taiwan
Prior art keywords
crystal
silicon single
single crystal
growth
silicon
Prior art date
Application number
TW092131766A
Other languages
English (en)
Other versions
TW200415264A (en
Inventor
Kozo Nakamura
Takashi Yokoyama
Koji Yoshihara
Toshiaki Saishoji
Ryota Suewa
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002331288A external-priority patent/JP4231275B2/ja
Priority claimed from JP2003046411A external-priority patent/JP2004256322A/ja
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Publication of TW200415264A publication Critical patent/TW200415264A/zh
Application granted granted Critical
Publication of TWI265217B publication Critical patent/TWI265217B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW092131766A 2002-11-14 2003-11-13 Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal TWI265217B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002331288A JP4231275B2 (ja) 2002-11-14 2002-11-14 シリコンウェーハの製造方法およびその製造装置およびシリコンウェーハ
JP2003046411A JP2004256322A (ja) 2003-02-24 2003-02-24 シリコン単結晶の製造方法、シリコン単結晶およびシリコン単結晶の引上げ装置

Publications (2)

Publication Number Publication Date
TW200415264A TW200415264A (en) 2004-08-16
TWI265217B true TWI265217B (en) 2006-11-01

Family

ID=32314096

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092131766A TWI265217B (en) 2002-11-14 2003-11-13 Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal

Country Status (3)

Country Link
US (1) US20060016387A1 (zh)
TW (1) TWI265217B (zh)
WO (1) WO2004044278A1 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005073439A1 (ja) * 2004-02-02 2007-09-13 信越半導体株式会社 シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法
US7972439B2 (en) * 2004-08-05 2011-07-05 Vladimir Iljich Amosov Method of growing single crystals from melt
JP4661204B2 (ja) * 2004-12-16 2011-03-30 信越半導体株式会社 単結晶の製造方法およびアニールウェーハの製造方法ならびにアニールウェーハ
FR2881573B1 (fr) 2005-01-31 2008-07-11 Soitec Silicon On Insulator Procede de transfert d'une couche mince formee dans un substrat presentant des amas de lacunes
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP4805681B2 (ja) * 2006-01-12 2011-11-02 ジルトロニック アクチエンゲゼルシャフト エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
JP2007284260A (ja) * 2006-04-12 2007-11-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法
KR20090034534A (ko) * 2007-10-04 2009-04-08 주식회사 실트론 극저결함 반도체 단결정의 제조방법 및 그 제조 장치
FR2933233B1 (fr) * 2008-06-30 2010-11-26 Soitec Silicon On Insulator Substrat de haute resistivite bon marche et procede de fabrication associe
FR2933235B1 (fr) * 2008-06-30 2010-11-26 Soitec Silicon On Insulator Substrat bon marche et procede de fabrication associe
FR2933234B1 (fr) * 2008-06-30 2016-09-23 S O I Tec Silicon On Insulator Tech Substrat bon marche a structure double et procede de fabrication associe
JP5223513B2 (ja) * 2008-07-11 2013-06-26 株式会社Ｓｕｍｃｏ 単結晶の製造方法
JP6052189B2 (ja) * 2014-01-16 2016-12-27 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
CN103981569B (zh) * 2014-04-30 2017-08-18 上饶光电高科技有限公司 一种解决铸造晶体硅长晶阴影缺陷的方法
KR101680213B1 (ko) * 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
CN113755944A (zh) * 2020-06-05 2021-12-07 西安奕斯伟材料科技有限公司 一种单晶炉热场结构、单晶炉及晶棒

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193456A (ja) * 1985-02-21 1986-08-27 Toshiba Corp 半導体素子の製造方法
JP2852345B2 (ja) * 1990-03-29 1999-02-03 住友シチックス株式会社 単結晶成長装置及び単結晶成長方法
US5443034A (en) * 1994-08-17 1995-08-22 Solec International, Inc. Method and apparatus for increasing silicon ingot growth rate
US5900059A (en) * 1996-05-29 1999-05-04 Komatsu Electronic Metals Co., Ltd. Method and apparatus for fabricating semiconductor single crystal
US6039801A (en) * 1998-10-07 2000-03-21 Memc Electronic Materials, Inc. Continuous oxidation process for crystal pulling apparatus
JP2001102385A (ja) * 1999-07-28 2001-04-13 Mitsubishi Materials Silicon Corp 点欠陥の凝集体が存在しないシリコンウェーハ
JP3783495B2 (ja) * 1999-11-30 2006-06-07 株式会社Ｓｕｍｃｏ 高品質シリコン単結晶の製造方法
US6733585B2 (en) * 2000-02-01 2004-05-11 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
JP4808832B2 (ja) * 2000-03-23 2011-11-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 無欠陥結晶の製造方法
JP2001278692A (ja) * 2000-03-29 2001-10-10 Shin Etsu Handotai Co Ltd シリコンウエーハおよびシリコン単結晶の製造方法
KR100708789B1 (ko) * 2001-01-02 2007-04-19 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 향상된 게이트 산화물 완전도를 가지는 단결정 실리콘을준비하는 공정
TW541581B (en) * 2001-04-20 2003-07-11 Memc Electronic Materials Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates

Also Published As

Publication number Publication date
TW200415264A (en) 2004-08-16
WO2004044278A1 (ja) 2004-05-27
US20060016387A1 (en) 2006-01-26

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