TWI237335B - Bonding method and apparatus - Google Patents

Bonding method and apparatus Download PDF

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Publication number
TWI237335B
TWI237335B TW92110035A TW92110035A TWI237335B TW I237335 B TWI237335 B TW I237335B TW 92110035 A TW92110035 A TW 92110035A TW 92110035 A TW92110035 A TW 92110035A TW I237335 B TWI237335 B TW I237335B
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Taiwan
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resin
substrate
heating
temperature
mounting member
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TW92110035A
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Chinese (zh)
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TW200401381A (en
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Akira Yamauchi
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Toray Eng Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/838—Bonding techniques
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    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

According to the bonding apparatus of the present invention, in the process of packaging chips onto the substrate via resin, after heat-fixing chips on substrate with the head, air is supplied to the first passage disposed inside the head and cool down the ceramic heater located beneath said first passage to the glass transition point of the resin used in the chip package, After cooling, the head is returned to the upper wait position to release the pressure to the chip. Consequently in company with the cooling of the head, the resin itself is also cooled to the glass transition point and nearly completely hardened, and capable of preventing the void from happening due to the expansion of air containing inside the resin.

Description

1237335 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單說明） [發明所屬之技術領域] 本發明係有關在樹脂基板或玻璃基板等之基板上裝設半 導體元件或表面裝設零件等之裝設構件之接合方法及其裝 置，尤其是有關精度爲佳地將裝設構件設於基板上之技術。 [先前技術] 先前，在基板（例如，液晶、E L (電場發光）電漿顯示器等 之平面顯示面板）之製造程序中，是將裝設構件（例如半導 體晶片等）裝設於基板中。將裝設構件（以下簡稱「晶片」） 裝設於基板之接合方法是在基板與晶片之間夾設樹脂（例 如各向異性導電薄膜（ACF : Anisotropic Conductive film) 或非導電性薄膜（NCP: No η- conductive paste等），並一邊 將加熱壓接裝置由晶片上方按壓，一邊將樹脂加熱硬化， 俾將晶片加熱壓接於基板上。 可是，此種接合方法具有以下的問題。例如，邊將A C F或 N C P等力□壓、邊力□熱硬化而將晶片裝設於基板時，如果以 高溫硬化樹脂時，會由樹脂產生除氣（〇 u t g a s )，並且如第 15圖與第16圖之晶片裝設之剖面圖所示，會發生覆蓋凸 起（bump)31之周邊的空洞32(第15圖所示）、或跨越凸起 3 1與基板電極3 3之間的空洞3 2 (第1 6圖所示）。由於該空 洞32之存在而導致發生接合力降低、引起導通不良、或在 溫度上升時使該空洞3 2***的問題。另外，不僅空洞而已 ，另發生有龜裂或間隙而增大電阻値，而發生導通不良的 1237335 問題。 另外，如第1 7圖之晶片裝設之剖面圖與第1 8圖所示之 第1 7圖之A - A沿箭頭所示之剖面圖，一度透過導電粒子 壓接者，在樹脂完全硬化（溫度降至玻璃轉化點以下）之前 去除加壓時，鬆緩樹脂而晶片4浮起，有與凸起（b 11 m p ) 3 1 之間發生間隙或增加接觸電阻的問題。 此外，由於晶片裝設時之加熱，晶片4與基板2雙方皆 $ 被加熱。在該加熱後冷卻至常溫時，由於兩構件之線膨脹 係數之差異，導致基板2本身向第19圖之箭號上方翹曲。 此時如溫度高於玻璃轉化點，鬆緩樹脂而在導電粒子3 4 與凸起3 1之間發生間隙，或設置於基板電極3 3與凸起3 1 . 之間的導電粒子3 4之接合面積發生變化，導致凸起3 1與 、 基板電極3 3之間的電阻値增大。 本發明係有鑑於該項問題而完成者，其主要目的在提供 一種精度爲佳地將裝設構件裝設在基板上之接合方法及其 鲁 裝置。 [發明內容] 先前在裝設晶片時發生空洞的原因，業界通常認爲是樹 脂所產生之除氣（〇 u t g a s )或空氣之捲入。因此，該業界爲防 止該空洞之發生，採取下列的對策： (1 )防止除氣之發生的對策是藉由將樹脂硬化溫度以低 溫中進行、進而抑制除氣之發生。 (2)防止氣體之捲入之對策是提高樹脂之黏度，俾使氣 體不易捲入樹脂中。 1237335 然而，於目前的情況下，即使實行上述之對策也無法充 分防止空洞之發生。 於是本發明人爲了防止空洞之發生，開發了可由下部用 顯微鏡觀察正在基板上接合中之樹脂的硬化狀態之裝置， 經過多方面檢討之結果，終於發現發生以下現象之原因。 此外，實驗中係使用硬化溫度2 2 0 °C、玻璃轉化點1 2 Ot之 NCP或ACF之樹脂。 在由加熱壓接裝置經常賦予2 2 0 °C之熱以將晶片加熱壓 接於基板之階段中，樹脂還是呈軟化狀態。在該項樹脂未 硬化之狀態下直接解除加壓裝置的加壓時，於解除壓力之 瞬間，在樹脂內部被施加壓力之狀態下之氣體會瞬間膨脹 (膨脹數十倍）而發生覆蓋凸起周圍之凸起32(第15圖所示） 、或跨越凸起與凸起之間之空洞32(第20圖及第20圖之 箭頭所視爲X方向之第2 1圖所示）之事得到確認。該空洞 3 2會有殘留水分等導致短路的問題。 另外，在使用A C F或A C P (各向異性導電糊）時，由於來 自晶片上方之加壓，在凸起部分之導電粒子（在聚合物表面 進行金或鎳等之電鍍加工者）一邊彈性變形、一邊以捲入凸 起之狀態保持電氣接觸。但是，在以加壓裝置解除加壓裝 置後即刻間，樹脂仍處於軟化狀態，因此，在基板彎曲時 ，雖是藉由加壓而平坦延伸，不過當恢復原狀之樹脂黏度 不敵基板彈性應力而在凸起與電極之間形成間隙擴大的部 分。隨著該間隙的擴大，如第1 7圖及第1 8圖所示，導電 粒子之彈性變形會恢復。 1237335 具體而言，在由導電粒子之捲入而形成之凸起部分之凹 部與導電粒子3 4之間產生之空間、或在該空間中流入樹脂 而導致接觸面積減少，結果增大電阻。亦即，發現了空洞 之發生或粒子壓接狀態的問題是由於玻璃轉化點（Tg溫度） 前之樹脂爲軟化狀態時解除加壓而引起的。 •亦即，要加熱硬化樹脂時，爲使解除來自晶片上方之加 壓也不會使包含於樹脂內部之氣體膨脹，而且使A C F等情 _ 況下，爲使樹脂黏度不致於不敵解除加壓時的導電粒子之 復原所發生之彈性應力，而在將樹脂冷卻到Tg溫度以下 之後，才解除加壓。 亦即，本發明之接合方法係爲，一種接合方法，爲在裝 h 設構件與基板之間夾設樹脂，俾將裝設構件裝設於基板上 _ ，其特徵爲包括：加熱壓接過程，係在以加壓裝置將裝設 構件加壓於基板之過程中，至少將裝設構件或基板之任一 方以加熱裝置加熱俾使樹脂加熱硬化；以及冷卻過程，在 · 加壓裝設構件之狀態下冷卻加熱裝置；而且在冷卻加熱裝 置之冷卻結束後，解除加壓裝置對裝設構件之加壓' 利用本發明之接合方法，在裝設構件（例如晶片等）與基 板之間夾設樹脂，並以加壓裝置將裝設構件加壓到基板之 過程中，至少將裝設構件或基板之至少任一方以加熱裝置 加熱，同時使樹脂加熱硬化而將裝設構件加熱壓接於基板 上。當裝設構件被加熱壓接於基板上時，加熱裝置即被冷 卻，然後來自晶片上方之加壓裝置之加壓即被解除。亦即 ，隨著加熱裝置之冷卻，樹脂本身也被冷卻。從而，樹脂 1237335 是在已實質硬化的狀態下解除來自晶片上方的加壓，因此 可以抑制在加壓狀態下，因爲含在樹脂內部的氣體之外壓 被去除而導致之膨脹。結果可以防止因氣體的膨脹而發生 在凸起周圍或跨越凸起與凸起之間的空洞，因此可以防止 由於空洞之發生所引起之凸起與基板電極之間的導通不良 、或凸起間的短路等。 另外，本發明之接合方法係爲，冷卻過程宜冷卻到所使 _ 用之樹脂的玻璃轉化點附近。 亦即，在冷卻過程中，須冷卻冷卻裝置，並將基板與裝 設構件接合之樹脂冷卻到玻璃轉化點爲止。從而在樹脂大 致完全硬化之狀態下才使加壓裝置之加壓被解除，因此可 、 以抑制在加壓狀態下因包含於樹脂內部之氣體的外壓被去 _ 除所導致的膨脹。其結果是可以防止因氣體的膨脹在凸起 周圍或跨越凸起與凸起之間所發生之空洞，進而可防止空 洞之發生所導致之凸起與基板電極之導通不良、或凸起間 · 的短路等。 此外，本發明的接合方法係爲，冷卻過程在將樹脂冷卻 至玻璃轉化點附近時，宜將基板與裝設構件之至少一方之 溫度調節，俾使樹脂之溫度在玻璃轉化點附近，而且使基 板與裝設構件由室溫之熱膨脹量成爲大致相同。 亦即，在冷卻過程中，樹脂溫度成爲玻璃轉化點附近， 此時將基板與裝設構件之至少一方之溫度進行調節，俾使 基板與裝設構件由室溫之熱膨脹量大致相等。因此，利用 基板與裝設構件之收縮量之差即可避免裝設構件與基板翹 1237335 曲而發生之接合不良或電阻値不良。另外，在此所謂基板 之熱膨脹量係指例如與做爲裝設構件之晶片長度相對應之 基板部分之熱膨脹量。 另外，在本發明之接合方法中，基板與裝設構件之溫度 調節宜至少進行裝設構件之冷卻或基板之加熱之至少任一 方。 亦即，由裝設構件直接加熱將裝設構件裝設於基板時， 係依距離加熱裝置較近之順序、即以裝設構件、樹脂、基 板之順序升高溫度。另外，基板方面因爲未加熱，所以基 板本身具有放熱效果，裝設構件與基板之間的溫度差變大 。此時，應將裝設構件側積極冷卻，或在大氣開放狀態下 將基板側自然冷卻或一邊積極冷卻一邊加熱基板以調節兩 構件之溫度，俾使樹脂溫度在玻璃轉化點附近之裝設構件 與基板之熱膨脹差消失。因此，可以達到與上述相同之效 果。 另外，在本發明之接合方法中，冷卻過程宜冷卻加熱裝 置，俾使降到所使用之樹脂之玻璃轉化點正2 0 °C以下。 亦即，使樹脂夾設在裝設構件與基板之間並以加壓裝置 加壓，且邊以加壓裝置加熱、邊將裝設構件加熱壓接於基 板上。在將裝設構件加熱壓接於基板之後，加熱構件被冷 卻至所使用之樹脂的玻璃轉化點之正2 0 °C以下。隨著該冷 卻，樹脂本身也被冷卻，而達到大致硬化之狀態。因此， 可以達到與上述相同的效果。 本發明之接合方法係爲，一種接合方法，使樹脂夾設在 -10- 1237335 裝設構件與基板之間以將裝 包括：第1加熱過程，藉由 之溫度之溫度加熱樹脂；以 過程加熱樹脂特定時之後， 度之溫度加熱樹脂。 利用本發明之接合方法， 氣體之溫度的溫度來加熱樹 度加熱硬化樹脂。因此，在 爲大致硬化狀態，而在黏度 即使發生氣體，也由於氣體 以可以防止空洞等發生。 另外，在本發明之接合方 度以低於1 9 (TC爲宜，第2力口 爲佳。此外，由第1加熱過 時間宜小於2 0秒。 如此，將第1加熱過程之 加熱過程之溫度設定於高於 熱過程到第2加熱過程爲止 在不發生氣體之狀態下將樹 度高的狀態下升高溫度。其 體發生應力黏度變高，因此 另外，本發明之接合方法 樹脂冷卻至玻璃轉化點附近 設構件裝設於基板，其特徵爲 加熱以低於樹脂本身發出氣體 及第2加熱過程，在第1加熱 以高於第1加熱過程之設定溫 在以低於因加熱樹脂本身發生 脂後，以高於該加熱溫度之溫 未發生氣體之狀態下，樹脂成 高的狀態下被升高溫度。此時 發生應力而造成黏度變大，所 法中，第1加熱過程之設定溫 熱過程之設定溫度以高於1 9 (TC 程到第2加熱過程爲止之指定 溫度設定爲低於1 9 (TC、而第2 1 9 Ot ，此外，藉由將第1力口 之時間設定爲低於2 0秒，即可 脂成爲大致硬化之狀態而在黏 結果是即使發生氣體，由於氣 可以防止空洞等之發生。 中，在第2加熱過程之後’將 爲佳。 在第2加熱過程之後，被加熱之樹脂被冷卻至玻璃轉化 1237335 點。因此，例如在將晶片作爲裝設構件之情況下，可將所 發生之產生在凸起周圍或凸起間所發生空洞不致造成在加 壓解除時使其膨脹、變形而使樹脂發生龜裂，而可將樹脂 完全硬化。 此外，在本發明之接合方法中，在將裝設構件裝設於基 板並將樹脂加熱硬化而使裝設構件固定於基板爲止之過程 中，宜分爲將裝設構件暫時壓接於基板之暫時壓接程序、 φ 以及將樹脂大致完全硬化而將裝設構件固定於基板之正式 壓接程序，而以暫時壓接程序做爲第1加熱過程、正式壓 接程序做爲第2加熱過程。 藉由區分爲暫時壓接程序與正式壓接程序，即可提升生 -產力。另外，藉由將正式壓接作業多頭（m 1111 i h e a d )化，將 _ 可謀求更高的生產力。/ 此外，本發明之接合方法係爲，一種接合方法，爲在裝 設構件與基板之間夾設樹脂以將裝設構件裝設於基板之方 · 法，其特徵爲包括：暫時壓接程序，爲在基板上將裝設構 件裝設於已塗覆樹脂之指定處上時，將塗覆於該處之樹脂 事先加熱軟化之狀態下暫時壓接裝設構件；以及正式壓接 程序，將已暫時壓接之裝設構件接合部之樹脂再加熱硬化 使裝設構件固定於基板上。 將塗覆於基板上之樹脂已於事先加熱之狀態上裝設裝設 構件。亦即，樹脂已經過加熱軟化，因此如將裝設構件按 壓於樹脂裝設，則在裝設時所捲入之氣體即容易由裝設構 件與樹脂之間漏出。因此，可以減少裝設構件在裝設時所 2 1237335 捲入的氣體。 此外，在本發明之接合方法中，宜將暫時壓接程序中之 樹脂之加熱溫度設定於6 0 °C至1 2 0 °C之範圍、或暫時壓接 程序中之樹脂加熱由基板之背面進行、或暫時壓接程序中 之樹脂之加熱由基板上方將熱風流朝樹脂供給、更以具備 有連續或分離暫時壓接程序與正式壓接程序爲佳。 y 再者，本發明之接合方法係爲，一種接合方法，爲使樹 脂夾設在裝設構件與基板之間、以將裝設構件裝設於基板 ，其特徵爲：將裝設構件裝設在已將裝設塗覆於上述基板 之指定處時的接地速度設定小於1 〇mm/s。 利用本發明之接合方法，可以將裝設構件對基板之接地 速度小於1 〇 m m / s e c於已塗覆樹脂之指定處裝設裝設構件 ，裝設構件可以慢慢地按壓於樹脂，因此，在該被按壓之 過程中，捲入裝設構件與樹脂之間的氣體容易漏出。 另外，在本發明之接合方法中，理想的樹脂是摻入導電 粒子之樹脂。 亦即，在將裝設構件（例如晶片）加熱壓接於基板時，位 於晶片側之凸起與基板電極之間的導電粒子會被彈性變形 。維持該狀態之樹脂會被冷卻而變成大致上硬化之狀態， 因此可以防止導電粒子之彈性變形之復原，可以將晶片與 基板相對之導電粒子之接觸面積保持固定。 另外，本發明之接合裝置係爲，一種接合裝置，爲使樹 脂夾設在裝設構件與基板之間以將裝設構件裝設於基板， 其特徵爲具備：保持台，用於載置保持基板；加壓裝置， 將裝設構件加壓到所保持之基板的指定處；加熱裝置，加 1237335 熱已加壓之狀態的裝設構件、加熱硬化樹脂；以及冷卻裝 置，用於冷卻使裝設構件呈加壓狀態之加熱裝置。 亦即，藉由加壓裝置裝設構件隔著樹脂加壓到載置保持 於保持台上之基板上之指定處，且被加熱裝置邊加熱邊壓 接於基板上。然後，冷卻加熱裝設構件之加熱裝置再解除 裝設構件之加壓。因此，隨著加熱裝置之冷卻，樹脂本身 也被冷卻而大致完全硬化，所以可以防止因氣體之膨脹在 凸起周圍或跨越凸起與凸起之間所發生之空洞，進行可以 防止因空洞之發生所引起之凸起與基板電極之間的導通不 良、或凸起間之短路等。 此外，在本發明之接合裝置中，宜具有溫度控制裝置， 俾將冷卻裝置之冷卻溫度控制在每一被使用樹脂之玻璃轉 化點之正2 (TC以下。 亦即，使溫度被控制成使用冷卻裝置之冷卻|的各樹脂之 每一玻璃轉化點爲正2 0 °C以下，以達成上述的效果。 另外，依據本發明之接合裝置，冷卻裝置較佳爲，係在 加熱裝置上設有形成氣體流路之貫通孔，而由外部吹送氣 體之送風裝置、或設於加熱裝置內部的第1流路、以及將 氣體供給至該第1流路的氣體供給裝置所構成，抑可在安 裝於加熱裝置外周之放熱用的冷卻構件中，由設在加熱裝 置內部之第2流路、以及將冷卻水供給至該第2流路的冷 卻水供給裝置所構成，再者，第2流路係以面向內裝有加 熱器模式之加熱器構件者爲佳。 此外，在本發明之接合裝置中，宜在保持台側設置加熱 -1 4- 1237335 裝®，並控制加熱裝置之溫 溫度成爲每〜被使用之樹脂 亦即，利用設置於保持台 保持台之基板被加熱。亦即 設裝設構件之樹脂之玻璃轉 卻時裝設構件與基板沒有溫 之線膨脹係數之差異所發生 此外，在本發明之接合裝 以依裝設構件與基板溫度來 熱裝置，俾使樹脂冷卻到玻 裝設構件之至少一邊之溫度 點，且基板與裝設構件距離 亦即’在冷卻過程中，樹 以使基板與裝設構件距離室 兩構件之溫度。至於該溫度 構件、基板及樹脂之各溫度 冷卻時所檢測出來之實測値 條件。 另外’本發明之接合裝置 脂夾設在裝設構件與基板之 ’其特徵爲具備：保持台， ’在已被載置保持在保持台 處上’進行裝設構件之定位 置’將裝設構件裝設於基板 应俾使保持於保持台之基板 之坡璃轉化點之正2 0 t以下。 側之加熱裝置而使載置保持於 保&台被設定成每~用於裝 化點之正2 (TC以下，因此，冷 度差’而可以防止由於兩構件 之基板的翹曲。 置中’宜具備溫度控制裝置， 控制冷卻裝置與保持台側之加 璃轉化點附近時，調節基板與 使樹脂的溫度接近玻璃轉化 室溫之熱膨脹量略爲相等。 月曰iW度接近玻璃轉化點，此時 溫之熟膨脹量約略相等而調整 控制方法係依據比較例和裝設 在事前測試所得之基準値、與 所求得之溫度偏差而事先設定 係爲，一種接合裝置，爲使樹 間以將裝置構件裝設在基板上 用h載置保持基板；裝設裝置 之基板上的樹脂所塗覆之指定 以進行裝置；以及速度控制裝 時之裝設裝置之接地速度調節 1237335 爲小於 1 0 m m / s e c。 亦即，利用裝設裝置，在已塗覆有保持於保持台的基板 上之樹脂的指定處上定位、裝設裝設構件。當該裝設構件 要被裝設於基板時，利用速度控制裝置將裝設裝置之接地 速度控制成小於1 〇 m m / s e c。然而，可達成上述效果v [實施方式] 作爲解決先前之問題的形態如下。 針對本發明之一實施例，一邊參照圖式一邊說明。 <第1實施例> 在本實施例中係採用利用A C P、A C F、N C P、N C F (非導 電薄膜）等之熱硬化性樹脂將裝設構件的晶片裝設於基板 爲例加以說明。 另外，在本發明中做爲「裝設構件」，係表示例如：IC 晶片、半導體晶片、光學元件（optical element)、表面裝設構 件、晶片、晶圓、TCP (輸送膠帶裝設體）、FPC (可撓性印 刷電路）等與種類或大小無關而與基板接合之所有之形態 ，包括對平面顯示面板之晶片接合之C Ο G ( C h i ρ Ο n G 1 a s s) 或 TCP、以及 FPC 之接合之 OLB(Ou ter Lead Bonding)。 另外，本發明之所謂「基板」係例如無關於樹脂基板、 玻璃基板、薄膜基板、晶片、晶圓等種類，而顯示與裝設 構件接合之一切形態。 首先，針對本實施例所使用之裝置，一邊參照圖式一邊 加以具體說明。 第1圖爲表示本發明之接合裝置之正式壓接裝置之槪略 -16- 1237335 構造之立體圖，第2圖爲表示實施例裝置之壓頭部分之局 部構造之正面圖，第3圖爲表示實施例裝置之壓頭部分之 局部構造之側面圖。 如第1圖所示，本發明之正式壓接裝置1係由將未圖示 之暫時壓接單元所搬送之基板2保持水平之可動台3、將 基板上之晶片4加熱壓接之壓頭5、在將晶片4加熱壓接 於基板2時而由下方支撐基板2之玻璃背托（glass backup) 6所構成。 可動台3如第1圖所示，具備吸附保持基板2之基板保 持台7，該基板保持台7在構造上可以分別在水平二軸（X ，Y)方向、上下（Z)方向、以及Z軸周圍（0)方向移動自如。 壓頭5如第2圖所示，由金屬製之工具所構成之本體8 之下部依次由陶瓷製的陶瓷架9、陶瓷加熱器1 0、以及陶 瓷壓體1 1所構成。另外，陶瓷架9是以螺栓1 2而被安裝 於工具本體8，同時陶瓷加熱器1 0及陶瓷壓體1 1係被燒 結於陶瓷架9。 另外，陶瓷壓體1 1裝設有例如熱電偶、測溫電阻體等做 爲溫度檢測裝置1 3。亦即，陶瓷壓體11係以溫度檢測裝 置1 3檢測受自陶瓷加熱器1 0之熱，並將該檢測結果傳送 到溫度控制部2 1。 陶瓷架9如第3圖所示，在陶瓷加熱器1 0之發熱部分之 上端面，有用於流通與排出氣體之第1流路1 5貫穿陶瓷架 9之下端部之長邊方向（第3圖中之X方向）。此外，在第1 流路1 5係有由工具本體8供應氣體之氣體供給流路1 6連 -1 7- 1237335 通連接。另外，如第2圖所示，對該氣體供給流路1 6之另 一端，透過具有連通連接的閥V之耐壓軟管（hose)17由氣 體供應裝置1 8供給氣體。 亦即，由氣體供應裝置1 8所供應之氣體依次經過氣體供 給流路1 6、氣體流路1 5而由第1流路1 5兩端之開口部1 5 a 排出。因此，由陶瓷加熱器1 0之發熱部1 0 a所發出之熱被 氣體循環所奪取，可以快速冷卻陶瓷加熱器1 〇與陶瓷壓體 | 1 1雙方。 如第4圖所示，陶瓷加熱器1 0被形成爲將發熱部1 0 a 與端子部1 〇 b配設成T字形之特定厚度（例如，1 m m左右） 之嵌板（panel)體。另外，陶瓷加熱器10是構成爲以電絕 ~ 緣體材料之陶瓷材料覆蓋發熱體1 9，且使發熱體1 9之端 - 子2 0突出端子部1 0 b。 此外，陶瓷架9、陶瓷加熱器1 0之陶瓷材料與陶瓷壓體 1 1係以氮化矽中添加特定量之玻璃等材質所構成。另外，@ 陶瓷架9之線膨脹係數以與陶瓷加熱器1 0及陶瓷壓體1 1 之線膨脹係數相等爲理想。再者，該等之熱傳導率宜以陶 瓷加熱器1 〇爲基點設成越朝向陶瓷壓體1 1之加壓面側 (第2圖下方）變成越大，同時越朝向其相反側（第2圖之上 方）之陶瓷架9之安裝面側變成越小。 溫度控制部2 1中事先由未圖示之外界輸入裝置輸入有 依所使用之每一種樹脂相對應之設定條件，例如，加熱時 間、做爲陶瓷加熱器1 〇之冷卻溫度之玻璃轉化點等。根據 該等輸入條件與溫度檢測裝置所檢測之結果進行陶瓷加熱 -18- 1237335 器1 〇之溫度控制。例如比較事先設定輸入之玻 溫度檢測裝置1 3所傳送之實測値，並依照可以 偏差控制陶瓷加熱器1 0之溫度。具體地說，圍 供應氣體，當溫度降到T g以下時則關閉V、使 其次，利用第5圖之流程圖說明利用上述之 在基板上裝設晶片之一循環之動作。此外.，在 ，事先假定樹脂之硬化溫度爲2 2 (TC、玻璃轉1 1 2 Ot。另外，在本實施例中，相較於對前程序 程序中事先將晶片暫時壓接於基板之狀態所搬 用將晶片完全正式壓接於基板上之情形爲例加 <步驟S 1>基板之定位 在上述暫時壓接程序中，經由樹脂暫時壓接 板2被未圖示之搬送機構搬送到正式壓接裝置 被移載、吸附保持在可動台3之基板保持台7 台7被未圖示之驅動機構移動至前方（第1圖之 壓頭5與玻璃背托（g 1 a s s b a c k u p ) 6之間以進行 位，以便由上下方向夾入壓頭5與玻璃支撐6 <步驟S 2 >開始晶片之加熱壓接 基板2之定位一完成，即利用未圖示之驅動機 5，晶片4即被該壓頭5與位於基板2下方之玻瑶 backup)6夾入。壓頭5即開始將晶片4加熱壓 。此時，壓頭5中所具備之陶瓷加熱器1 0係如 ，在晶片4之加熱壓接開始的時間點（t 0 )中， 部2 1而被設定於2 2 0 °C。與開始加熱壓接之同 璃轉化點與 求得之溫度 匿啓閥V以 :壓頭上升。 實施例裝置 本實施例中 七點（T g )爲 之暫時壓接 送者，係採 以說明。 晶片 4之基 1。該基板4 。基板保持 Y方向）之 基板4之定 與晶片4。 構降下壓頭 ί 背托（glass 接於基板2 第6圖所示 (溫度控制 時，由開始 -19- 1237335 之時間點（t Ο )到加熱完成之時間點（t 1 )之指定時間中，由溫 度控制部2 1將陶瓷加熱器1 0之溫度保持於2 2 0 °c ，一邊 將晶片加熱壓接於基板2。結果，藉而來自晶片4之熱傳 導而開始加熱硬化樹脂。 <步驟S 3 >開始冷卻 到達加熱結束時間點（U )時，由主控制部Μ將加熱完成 信號送給溫度控制部2 1，依據該信號來自溫度控制部2 1 之命令信號被傳送到閥V之開啓閥V。藉由閥V之開啓而 開始由氣體供應裝置1 8開始的氣體之供應。氣體經過耐壓 軟管1 7、氣體供應流路1 6而流入第1流路1 5。該流入之 氣體朝向第1流路1 5之兩端開口部1 5 a流通而排出。結果 ，快速冷卻配設於第1流路1 5下方之陶瓷加熱器1 0與陶 瓷壓體1 1。 <步驟S 4 >是否已達玻璃轉化點？ 與冷卻開始之同時，由設置於陶瓷壓體1 1之溫度檢測裝 置1 3依次檢測壓頭5之溫度，該項實測値被傳送至溫度控 制部2 1。在溫度控制部2 1中爲逐次執行事先設定輸入做 爲陶瓷加熱器1 〇之冷卻溫度之玻璃轉化點（T g)與實測値 之比較處理。在此，如檢測結果未達到玻璃轉化點（Tg)時 ，則一邊反覆進行該T g與實測値之比較處理一邊繼續冷 卻。反之，如實測値達到T g (第6圖所示之時間點12)時， 即進行到步驟S 5。 亦即，藉由將陶瓷加熱器1 〇之溫度冷卻到Tg時，則藉 由壓頭5加熱之晶片4也被冷卻，進而將晶片4固定於基 -20- 1237335 板2之樹脂也被冷卻。尤其伴隨著該冷卻，因爲樹脂溫度 被冷卻至玻璃轉化點（T g )，樹脂也大致完全硬化。 另外，在本實施例中雖然將陶瓷加熱器1 〇之冷卻溫度設 定於樹脂之玻璃轉化點（Tg)，惟該冷卻溫度亦可設定於所 使用樹脂之種類相對應之玻璃轉化點（Tg)之正2 0°C以下之 範圍內。, <步驟S 5 >解除加壓 g 冷卻溫度達到T g時，即解除對晶片4之加壓，並使壓 頭5回到上方的準備位置。此時，由於來自溫度控制部2 1 之命令信號而使閥V被閉鎖，同時爲將下一個晶片4固定 於基板上，將陶瓷加熱器1 〇之溫度控制成上升到2 2 (TC - (第6圖所示之時間點13 )。 — 亦即，樹脂被冷卻到T g而大致成爲完全硬化之狀態時 ，來自晶片4上方之加壓會被解除，因此，可以防止樹脂 內之氣體的膨脹。亦即，藉由樹脂之硬化可以抑制氣體之 · 膨脹，並壓制凸起周圍等處發生空洞。 另外，在因壓頭5之加壓而彈性變形而擴張接觸面積之 狀態下，可以利用樹脂硬化壓制位於凸起與基板電極之間 的導電粒子之彈性恢復。換言之，由於樹脂硬化，相對於 導電粒子之彈性變形之復原時之彈性應力，樹脂黏度超越 而可維持超越導電粒子之彈性變形狀態。結果可以去除凸 起與導電粒子之間所發生之空洞。 <步驟S 6 >取出基板 壓頭5之加壓一被解除，基板保持台7即移動至基板交 -2 1 - 1237335 接位置。移動到交接位置的基板2被未圖示之基板搬送機 構搬送到基板收容單元而收容於基板回收盒。 到此’ 一片基板2上晶片4的接合即告完成。 如上所述，可以將晶片4 一邊加熱壓接於基板2上，一 邊加熱硬化樹脂後，利用氣體快速冷卻陶瓷加熱器1 〇至每 一使用之樹脂之玻璃轉化點（Tg)，進而也可以將晶片4固 定於基板2之樹脂冷卻至T g爲止。因此，樹脂會成爲大 致完全硬化之狀態，因此藉由在該狀態下解除來自晶片上 方之加壓，而可解除由本發明人所確認之先前以來之問題 的發生原因。 具體而言，先前方法中係在硬化樹脂之前的軟化狀態下 使壓頭5上升以解除加壓時，由於存在樹脂中之氣體的急 劇膨脹而宛如要覆蓋凸起周圍似地發生空洞。但是，在本 實施例中係在樹脂硬化之狀態下解除加壓，因此樹脂黏度 超過氣體膨脹之應力而可以防止發生空洞。 此外，先前使用A C F或A C P時，由於導電粒子之彈性變 形之恢復，晶片被往上提，而在凸起與導電粒子之間產生 空洞。但是，在本實施例中，係在樹脂硬化之狀態下解除 來自晶片上方之加壓，因此，樹脂黏度超過導電粒子之彈 性變形之恢復所作用之彈性應力，可以防止凸起與基板電 極之間的連接不良。 <第2實施例> 在上述第1實施例中，已針對將晶片4加熱壓接於基板 2、並且大致完全固定的正式壓接裝置加以說明，在本實施 -22- 1237335 例中，則要針對可將晶片4裝設於基板2上以進行暫時壓 接與正式壓接之接合裝置加以說明。另外，因爲接合裝置 僅其壓頭周圍之構造與第1實施例裝置不同，所以在相同 處爲附加相同符號、而針對不同部分進行說明。 第7圖爲表示有關本發明之接合裝置之槪略構造之立體 圖，第8圖爲表示壓頭周圍之局部構造之正面圖。 如第8圖所示，接合裝置1 0 0除了將晶片4吸附保持、 « 並定位裝設在已塗覆樹脂G之基板上之指定處之外，係由 下列構件所構成：裝設-加熱壓接機構1 〇 1，爲將晶片4壓 接於基板2 ;可動台3，爲將基板保持水平；玻璃背托6， 在將晶片4壓接於基板2上之樹脂部時，由下方支撐基板 . 2 ;加熱器1 0 2，用於加熱玻璃背托6 ;噴嘴1 0 3、1 0 4，分 別由上下方向而朝基板2供應氣體；以及控制部1 0 6，用 於全盤控制該等各構件。 裝設-加熱壓接機構1 〇 1係如第7圖所示，在其下方具有鲁 吸附保持晶片4之壓頭1 0 7，構造上可以上下（X )方向及水 平（Z)方向移動。另外，壓頭內部具有未圖示的陶瓷加熱器 ，同時也具備用於冷卻該加熱器之冷卻裝置。此外，該壓 頭之構造與第1實施例裝置略同，所以省略其詳細說明。 另外，壓頭1 0 7之構造並不限於此種形態，也可以例如壓 頭內部未具有冷卻裝置之構造。 可動台3具有吸附保持基板2之基板保持台7，該基板 保持台7被構成分別朝向水平雙軸（X，Y)方向、上下（Z) 方向、以及Z軸周圍（0 )方向移動自如。 -23- 1237335 加熱器1 Ο 2將玻璃背托6加熱，並將該熱傳導至基板2 與基板上之樹脂G以便加熱之用。該加熱器1 0 2如第8圖 所示，係裝設於距離基板2特定距離之玻璃背托6之側壁 而由接到控制部1 〇 6之控制信號之未圖示之電壓控制器控 β 制其溫度。 配設於基板下方之噴嘴1 〇 3係在加熱玻璃背托6時用於 抑制玻璃背托6接觸到基板2之部分的附近區域之熱傳導 者而可以向基板裡面供應氣體。 ® 另外，配設於基板上方之噴嘴1 〇 4係用於冷卻加熱壓接 後之晶片4而可以向晶片裝設部分供應氣體。 此外，兩個噴嘴1 〇 3、1 0 4可以依照來自控制部1 0 6之控 . 制信號、藉由閥V之開閉操作而由氣體供應源1 0 9供應氣 體。 控制部1 〇 6全盤進行在裝設-加熱壓接機構1 Ο 1將晶片4 裝設於基板2時之接地速度之調節，用於調節加熱玻璃背 φ 托6之加熱器1 0 2之溫度，以及調節來自用於冷卻基板2 及晶片4之噴嘴1 0 3、1 0 4之氣體供給等。再者，有關各部 之具體控制法說明如下。 其次，在使用上述之接合裝置而基板上之已塗佈樹脂 (ACF)部分裝設晶片時，在基板上裝設晶片前一邊調節樹 脂溫度一邊在基板上裝設晶片，然後經過暫時壓接程序、 正式壓接程序與冷卻程序以固定晶片於基板之方法加以說 明。以下針對具體的方法，依據第9圖之流程圖與第1 0 圖之溫度輪廓加以說明。另外，第1 〇圖所示之溫度輪廓爲 -24- 1237335 說明之方便，由裝設晶片後開始顯示。 <步驟S 1 0 >基板之定位 基板2是藉由未圖示之搬送機構而搬送到接合裝置100 。該基板2係被移載至可動台3之基板保持台7以被吸附 保持。基板保持台7是以未圖示之驅動機構朝向前方（第7 圖之Y方向）之壓頭1 〇 7與玻璃背托6之間移動，以進行基 板2之定位，以便壓頭1 0 7與玻璃背托6可以由上下方向 夾入晶片4，而進行基板2之定位。 <步驟S 1 1>樹脂之加熱 定位完畢後，加熱器1 0 2開始作動、加熱玻璃背托6， 該熱即被傳導至基板上之樹脂G、且使樹脂G軟化。且本 實施例之情形是樹脂爲A C F，所以樹脂溫度係設定於6 0 至1 2 0 °C之範圍內。理想溫度爲8 0至1 0 (TC。如樹脂溫度 低於6 0 °C時，樹脂G不能充分軟化，因此裝設晶片4時， 捲入晶片4與樹脂G間之界面等之氣體不易逸出。結果， 殘留於界面等之氣體成爲空洞。另外，如樹脂溫度超過1 20 °C 時，樹脂G即硬化。 <步驟S12>晶片的裝設 利用壓頭1 〇 7將位於特定處之晶片4吸附保持並定位裝 設於在基板上呈軟化狀態之樹脂部。在該樹脂上裝設晶片 4時，其接地速度係設定爲小於1 〇mm/秒。理想的範圍是1 至5 mm/秒。如接地速度超過1 0mm/秒時，則在將晶片4按 壓到樹脂部時，氣體沒有逃逸的時間。 晶片4被裝設後，立即停止加熱器1 0 2之加熱。 -25- 1237335 <步驟S 1 3 >第1加熱程序 在相當於暫時壓接程序之第1加熱程序中，依照所使用 之樹脂G加熱時，在不會由樹脂G發生氣體（以下簡稱 ▼ 「除氣」）的設定溫度下，以指定時間而一邊以壓頭1 〇 7按 壓晶片4、一邊加熱硬化俾將樹脂G達到指定黏度以上。 在此所謂指定黏度係指可以抑制下一個第2加熱過程中高 溫加熱樹脂G時所產生之除氣的發生應力。 _ 另外，於第1加熱程序之設定溫度爲例如樹脂G爲A C F 時，如第1 〇圖所示，在10至t 1之第1加熱程序之間，壓 頭中之加熱器溫度被調節成樹脂溫度不超過1 9 0 °C (在第 1 〇圖中爲1 7 0 °C )。該設定溫度以1 2 0至1 7 0 °C爲理想。 · 如設定溫度低於1 2 0 °C時，爲減緩樹脂G之硬化速度， 同時無法獲得充分的樹脂黏度。反之，如設定溫度超過1 90°C 時會發生除氣。亦即，除氣的發生應力超過未硬化狀態的 樹脂黏度，在晶片4與基板2之界面等處容易發生空洞等。 φ 此外，第1 〇圖所示之10至t 1之加熱時間係設定於2 0 秒以內。較佳爲1至5秒。通常使用A C F時，設定溫度在 1 8 0至1 9 0 °C時必須在2 0秒內硬化，但是即使少於該時間 也可以硬化而無空洞之發生。 再者，設定溫度與加熱時間可以依照所使用之樹脂之硬 化條件等適當地設定與變更。 <步驟S 1 4 >第2力口熱程序 第1加熱程序之樹脂之加熱硬化一結束，接著在第1 〇 圖所示之t 1至t2之間，以比先前第1加熱程序之加熱溫 -26- 1237335 度更高的溫度加熱硬化樹脂。此時之設定溫度須調節壓頭 內之加熱器溫度使樹脂超過1 9 Ot。該設定溫度以2 0 0至 2 2 (TC之範圍爲理想。如第2加熱溫度低於1 9 0 °C時，即會 損及樹脂之硬化進展。 . 亦即’在第2加熱程序中》係以先則之第1加熱程序事 先提高樹脂黏度，因此即使將溫度上升至1 9 0 °C以上以致 樹脂發生除氣，樹脂黏度仍可以抑制除氣的發生應力。結 果，可以防止空洞等發生。此外，如設定溫度超過2 2 CTC ，甚至超過2 4 (TC時，即有樹脂的耐熱上的問題。 此外，用於加熱樹脂G之第2加熱程序之設定時間，在 本實施例中係設定於例如2秒鐘。 在此，也可以將第1加熱程序開始（10)到第2加熱程序 結束（t2)爲止之時間設定在20秒以內。此種情形下，也可 以使樹脂G硬化而不發生空洞。 另外，該第2加熱程序相當於正式壓接程序。 <步驟S 1 5 >開始冷卻 第2加熱程序一結束，即開始冷卻以便樹脂溫度由第1 0 圖之t2之時間點成爲玻璃轉化點（t3之時間點）。具體而言 ，係利用下面順序進行冷卻。 首先，如同第1實施例之正式壓接裝置，依據來自控制 部1 〇 6之加熱停止（0 F F )信號而使未圖示之閥被開啓、開始 對壓頭內部供應氣體。隨著該氣體之供應，快速冷卻壓頭 內之陶瓷加熱器與陶瓷壓體。此時，樹脂G藉大氣開放狀 態之冷卻與因積極冷卻壓頭1 〇 7所導致之傳熱而收到冷卻 -27- 1237335 效果。 達到指定條件之溫度時即停止壓頭1 〇 7之冷卻，控制部 1 0 6即開啓操作閥V、並由基板上方之噴嘴1 0 4對晶片4 供應氣體，同時以加熱器1 〇 2之溫度來進行調節。亦即， 調整晶片4與基板2之溫度以便樹脂G之溫度在玻璃轉化 點附近，且基板2與晶片4由大氣開放之室溫狀態導致之 熱膨脹量成爲大致相同。因此，可以防止晶片4與基板2 因爲冷卻而收縮時容易發生之翹曲。 另外，該等溫度調節之時間或條件之設定方法係利用事 前測試，一邊測定晶片4、基板2以及樹脂G之各溫度一 邊進行條件設定。 此外，本實施例中，所謂基板2之熱膨脹量係指裝設晶 片4之部分與圍繞該部分之特定區域內之基板2的熱膨脹 量。該區域係依晶片4之大小等任意設定。 <步驟S 1 6 >解除加壓 當冷卻溫度達到玻璃轉化點時，即解除壓頭1 〇 7對晶片 4之加壓，並使壓頭1 0 7恢復至上方之準備位置。 <步驟S 1 7 >取出基板 壓頭1 〇 7之加壓一被解除，基板保持台7即移動至基板交 接位置。移動到交接位置之基板2由未圖示之基板搬送機 構搬送到基板收容單元而收容於基板回收盒（a m g a z i n e )。 以上結束一片基板2上晶片4之接合。 然後，本發明人進行實驗以確認利用第2實施例裝置將 晶片裝設於基板時變更接地速度（h e a d s p e e d )與晶片裝設 -28- 1237335 時之樹脂軟化溫度時的空洞的發生狀況。以下說明其結果。 <具體例> 使用高透明度無鉛玻璃（C r 0 w n g 1 a s s )做爲玻璃基板，並 使用A C F做爲塗覆該基板上電極部分之樹脂。將此時A C F 中所含之粒子徑爲3.5 μηι而每單位面積之粒子數爲100萬 個/ m m 3之物，塗覆於玻璃基板上使其厚度成爲3 5 μ m。 另外，設定A C F之推荐接合條件，亦即，該所用樹脂被 加熱而不發生除氣（〇 u t g a s )之溫度係設爲1 9 0 °C以下，而大 致完全硬化樹脂之溫度係設爲2 2 。 此外，將晶片裝設於基板時之接地速度（h e a d s p e e d )設爲 1、3、5、1 0( mm/秒）之4種型式，並針對以各接地速度將 晶片裝設於基板時之樹脂溫度1 5 0、1 7 0、1 8 0、2 0 0、2 2 0 (°C )分別進行實驗。另外，各樹脂溫度是以維持始終不變 加熱至樹脂硬化爲止。第2 2圖表示由實驗所得之結果。 再者，各條件下之點數（point)係以下述所求得。分別由 基板之背面以肉眼確認凸起周圍與凸起周圍以外之區域所 發生之空洞、以及大於空洞之大形龜裂之發生情形，並因 應其個數求得點數。具體而言，針對空洞，如無法針對每 一指定區域確認時，即對每一區域賦予「〇」點，如能確認 數個時，每一個區域賦予^ 1」點，如能確認數十個時，即 賦予「2」點。另外，對於龜裂也賦予相同配點，並分別合 計、求得空洞與龜裂的點數。 由第2 2圖可以確定在基板溫度1 7 (TC時，以接地速度 5 mm/秒將晶片裝設於基板以硬化樹脂時，可以實現點數爲 -29- 1237335 ^ 〇」，而不必確認空洞等等之優良的晶片裝設。亦即，意 指在裝設晶片時，捲入晶片與樹脂之界面等之所有氣體已 被排出。另外，在推荐接合條件之1 9 0 °C以下，藉由將接 地速度設定於1至1 Omm/秒之範圍內也確認了可以減少因 氣體之捲入而造成空洞等之發生。 此外，樹脂之軟化溫度在1 5 0 °C與2 0 (TC以上時，空洞等 之發生點（point)高之理由如下。 g 樹脂軟化溫度爲1 5 (TC時，遠低於A C F推荐接合條件而 樹脂未充分軟化，因此捲入晶片與樹脂界面之氣體無法完 全逸出而包含其中。 另外，樹脂軟化溫度超過2 0 0 °C時，因爲超過A C F的推 · 荐接合條件之不產生除氣之溫度，係由發生除氣所引起之 空洞。 如上所述，藉將基板上晶片裝設處之樹脂G事先加熱使 其軟化，同時控制晶片接地至樹脂G時之接地速度，可以 · 排除裝設時捲入晶片4與樹脂G之界面等之氣體，結果可 防止因氣體之捲入而發生樹脂硬化後之空洞等。 此外，在晶片裝設後之第1加熱程序中，以因應使用之 樹脂G來加熱時不致發生除氣的溫度而事先加熱、硬化樹 脂G於指定時間，然後經由以高於第1加熱程序之溫度大 致完全硬化樹脂之第2加熱程序，在第1加熱程序之時間 點下，因樹脂黏度超越在第2加熱程序所發生之除氣的發 生應力，因此，可以防止由發生除氣所引起之空洞或龜裂 等。 -3 0- 1237335 再者，在第2加熱程序後要將樹脂G冷卻至玻璃轉化點 時，藉由對晶片4供應氣體來冷卻，使樹脂G之溫度接近 玻璃轉化點，且基板2與晶片4對室溫之熱膨脹量成爲相 等，同時邊以加熱器1 〇 2加熱溫度降至低於玻璃轉化點之 溫度之基板2，一邊調節兩構件之溫度，藉此爲可不必控 制熱膨脹量而解除冷卻兩構件時所發生之翹曲。 另外，因爲是在達到玻璃轉化點樹脂G大致完全硬化的 狀態下解除壓頭（head) 107之加壓，因此可以進一步確實解 除因爲基板2與晶片4之熱膨脹量之差異而容易發生之翹 曲。 本發明並不侷限於上述實施例，也可以變形如下來實施。 (1 )在第1實施例中，係對前段的暫時壓接程序中事先 將晶片暫時壓接於基板之指定處之基板進行將晶片完全壓 接於基板之正式壓接，惟也可以在僅有正式壓接之成批程 序中將晶片裝設於基板上而不進行暫時壓接。 此時，只要在壓頭5之下端部設置吸附保持晶片4之吸 附孔，同時在基板2之下方設置識別裝置，使識別載置於 基板保持台7之基板2上之標記位置與晶片4之標記位置 而進行定位即可。 (2)在第1實施例中，雖在壓頭5裝設陶瓷加熱器1 0， 而僅由晶片4之上方加熱樹脂，但是也可以僅在基板保持 台7、或晶片4之上方與基板保持台之雙方設置陶瓷加熱 器等加熱裝置。此時，宜將基板保持台7邊之加熱器溫度 設定成與所使用之樹脂之玻璃轉化點（Tg)相同。 1237335 如上所述，將基板保持台7邊之加熱裝置設定爲T g，即 可使樹脂大致上完全硬化時之晶片4與基板2之溫度保持 相同。從而，即可以在先前僅由壓頭5側加熱將樹脂加熱 硬化時，解除容易因晶片4與基板2之線膨脹係數之差異 而發生之基板2之變形而導致之翹曲。 另外，加熱裝置並不侷限於陶瓷加熱器，只要可以將樹 脂加熱硬化之裝置即可。 (3 )在第1實施例中，係在沿著陶瓷加熱器1 0之上面側 I 設置第1流路1 5做爲冷卻裝置，惟也可以變形實施如下。 <變形例1 > 如第1 1圖之壓頭5之立體圖與其側面圖第1 2圖所示， _ 也可以在陶瓷架9之側壁設置水平方向貫穿之貫穿孔2 2， 而由外界對該貫穿孔內部，利用送風裝置等吹送氣體以使 氣體流通。 另外，如第1 1圖所示，該貫穿孔2 2也可以組合於對壓 φ 頭5之內部供應氣體之上述實施例之壓頭5之構造中，也 可僅靠貫穿孔2 2實施壓頭5之冷卻。 <變形例2 > 如壓頭5之正面圖第1 3圖所示，也可以設置多層之由陶 瓷架9與工具本體8之側壁基端部延伸至水平方向之推拔 (taper)形的散熱用冷卻構件（fin)23。由於如此設置多個冷 卻構件2 3，因而可以提升壓頭5之散熱效果，進而可以進 行壓頭5之冷卻。 此外，冷卻構件2 3以散熱效果高的構件爲理想，例如以 -3 2- 1237335 金屬爲宜。 再者，如第1 2圖所示，該冷卻構件2 3也可以組合於對 壓頭5之內部供應氣體之第1實施例之壓頭5之構造中， 也可以靠冷卻構件2 3實施壓頭5之冷卻。 - <變形例3 > 在第1實施例與各變形例中係以氣體實施冷卻，但是也 可以利用冷卻水來冷卻陶瓷加熱器1 〇。具體而言，如第1 4 圖之側面圖所示，也可以設置「U」字形之第2流路2 5使 _ 冷卻水供應裝置2 4所供應之冷卻水沿著陶瓷加熱器1 0之 上方循環。 (4) 在第1實施例中，係利用氣體或冷卻水於壓頭5之 冷卻，惟也可以利用其他之冷卻媒體。例如，也可以將液 態氮供應循環於第2流路。 (5) 在第2實施例中，係利用1台接合裝置1 0 0分別實 施暫時壓接程序與正式壓接程序，惟也可以分別設置暫時 φ 壓接程序與正式壓接程序之裝置。此時，正式壓接裝置僅 係用於加熱壓接在暫時壓接程序暫時壓接於基板上之晶片 4，因此在壓頭部分也可以沒有吸附保持晶片4之功能。 如此分別設置暫時壓接裝置與正式壓接裝置，將可以提 高量產力。 (6) 在第2實施例中，係利用玻璃背托6將加熱器1 0 2 之熱傳導至樹脂G以做爲晶片裝設前軟化樹脂之方法，但 是也可以例如在基板上方配置噴嘴等，將熱風吹向樹脂使 其軟化。另外，也可以將具有可移動於基板上方之加熱器 1237335 之臂（arm)移動至樹脂附近，利用加熱器之輻射熱以非接觸 狀態軟化樹脂。 <產業上之可利用性> 如上所述，本發明的接合方法與其裝置適用於將半導體 晶片等之晶片零件接合於液晶、E L (電場發光）、電漿顯示 器等之平面顯示面板之基板類。 [圖式簡單說明] 第1圖爲表示有關第1實施例之正式壓接裝置之槪略構 造之立體圖。 第2圖爲表示有關第1實施例裝置之壓頭（he ad)之局部 構造之正面圖。 第3圖爲表示有關第1實施例裝置之壓頭之局部構造之 側面圖。 第4圖爲表示有關陶瓷加熱器之局部構造之立體圖。 第5圖爲表示接合方法之流程圖。 第6圖爲表示壓頭之溫度控制輪廓（pro file)之圖。 第7圖爲表示有關第2實施例裝置的接合裝置之槪略構 造之立體圖。 第8圖爲表示有關第2實施例裝置之壓頭周圍之局部構 造之正面圖。 第9圖爲表示利用第2實施例裝置之接合方法之流程圖。 第1 〇圖爲表示壓頭之溫度控制輪廓之圖。 第1 1圖爲表/示第1變形例之壓頭之局部構造之立體圖。 第12圖爲表示第1變形例之壓頭之局部構造之側面圖。 - 34- 1237335 第1 3圖爲表示第2變形例之壓頭之局部構造的正面圖。 第1 4圖爲表示第3變形例之壓頭之局部構造的側面圖。 第1 5圖爲利用先前方法將晶片接合於基板時之剖面圖。 第1 6圖爲利用先前方法將晶片接合於基板時之剖面圖。 第1 7圖爲利用先前方法將晶片接合於基板時之剖面圖。 第1 8圖爲沿第1 7圖之A - A箭頭所視之剖面圖。 第1 9圖爲利用先前方法將晶片接合於基板時之剖面圖。 第2 0圖爲利用先前方法將晶片接合於基板時之平面剖 面圖。 第2 1圖爲利用先前方法將晶片接合於基板時之沿第2 0 圖中之箭頭方向所見之縱剖面圖。 第2 2圖爲表示利用實施例裝置所進行之實驗結果之圖。 [主要部分之代表符號說明] 1 正 式 壓 接 裝置 2 基 板 3 可 動 台 4 晶 片 5 壓 頭 6 玻 璃 背 托 7 基 板 保 持 台 8 本 體 9 陶 瓷_ 架 10 陶 瓷 加 埶 ^\\\ 器 10a 發 熱 部 1237335 I 〇b 端子部 II 陶瓷壓體 1 2 螺栓 13 溫度檢測裝置 1 5 第1流路 15a 兩端開’口部 16 氣體供給流路 17 耐壓軟管 18 氣體供應裝置 1 9 發熱體 2 0 端子 2 1 溫度控制部 22 貫穿孔 23 冷卻構件 2 4 冷卻水供應裝置 25 第2流路 100 接合裝置 101 裝設-加熱壓接機構 1 02 加熱器 1 0 3 噴嘴 1 04 噴嘴 10 6 制御部 10 7 壓頭 10 91237335 发明 Description of the invention (The description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiments, and the drawings are briefly explained.) [Technical field to which the invention belongs] The present invention relates to resin substrates or glass substrates. A bonding method and a device for mounting members such as a semiconductor element or a surface mounting part mounted on a substrate, and in particular, a technology for mounting the mounting member on a substrate with high accuracy. [Prior art] Previously, in a manufacturing process of a substrate (for example, a flat display panel of a liquid crystal, an EL (electric field emission) plasma display, etc.), a mounting member (for example, a semiconductor wafer, etc.) was mounted on a substrate. A mounting method for mounting members (hereinafter referred to as "wafers") on a substrate is to sandwich a resin (such as an anisotropic conductive film (ACF: Anisotropic Conductive film) or a non-conductive film (NCP: No η- conductive paste, etc.), and while pressing the heating and pressure bonding device from above the wafer, the resin is heated and hardened, and the wafer is heated and pressure bonded to the substrate. However, this bonding method has the following problems. For example, When the wafer is mounted on a substrate by pressing ACF or NCP with equal force, side force, and heat, if the resin is cured at a high temperature, outgas (〇utgas) will be generated from the resin, as shown in Figure 15 and Figure 16. As shown in the cross-sectional view of the wafer mounting, a cavity 32 (shown in FIG. 15) covering the periphery of the bump 31, or a cavity 3 2 (see FIG. 15) spanning between the bump 31 and the substrate electrode 3 3 may occur. (Figure 16). The existence of the cavity 32 causes problems such as a decrease in bonding force, poor conduction, or explosion of the cavity 32 when the temperature rises. In addition, not only the cavity but also cracks Or the gap increases the resistance 値, and the problem of poor conduction is 1237335. In addition, the cross-sectional view of the wafer installation shown in FIG. 17 and the A-A of FIG. 17 shown in FIG. 18 are shown by arrows The cross-sectional view shows that those who once passed through the conductive particle crimping, when the pressure is removed before the resin is completely hardened (the temperature drops below the glass transition point), the resin is loosened and the wafer 4 floats, with a bump (b 11 mp) 3 A gap or increase in contact resistance occurs between 1. In addition, due to the heating during wafer mounting, both wafer 4 and substrate 2 are heated. When cooled to room temperature after this heating, due to the linear expansion coefficient of the two components, The difference causes the substrate 2 to warp above the arrow in Fig. 19. At this time, if the temperature is higher than the glass transition point, the resin is loosened and a gap occurs between the conductive particles 3 4 and the protrusions 31, or it is set on the substrate. The joint area of the conductive particles 34 between the electrode 33 and the protrusion 3 1. Changes, resulting in an increase in resistance 値 between the protrusion 31 and the substrate electrode 33. The present invention is directed to this problem. Completer whose main purpose is to provide a precision A method for bonding a mounting member on a substrate and a device therefor. [Summary of the Invention] The cause of voids in the past when mounting a wafer is generally considered by the industry to be outgassing generated by resin (〇utgas) or The air is involved. Therefore, in order to prevent the occurrence of the cavity, the industry adopts the following countermeasures: (1) The countermeasures to prevent the occurrence of outgassing are to reduce the occurrence of outgassing by lowering the resin curing temperature to a low temperature. (2) The countermeasure for preventing the gas from being entangled is to increase the viscosity of the resin so that the gas is not easily entangled in the resin. 1237335 However, under the current circumstances, even if the above countermeasures are implemented, the occurrence of voids cannot be fully prevented. Therefore, in order to prevent the occurrence of voids, the present inventors have developed a device for observing the hardened state of the resin being bonded to the substrate with a microscope under the lower part. After reviewing the results from various aspects, they finally found out the following reasons. In addition, NCP or ACF resins with a hardening temperature of 220 ° C and a glass transition point of 12 Ot were used in the experiments. The resin is still in a softened state in the stage where heat of 220 ° C is often given to the substrate by the thermocompression device. When the pressure of the pressurizing device is directly released when the resin is not hardened, the gas in the state where the pressure is applied inside the resin will instantly expand (expand tens of times) to cover the protrusions at the moment when the pressure is released. The surrounding protrusions 32 (shown in Figure 15), or the gap 32 between the protrusions and the protrusions (shown in Figure 20 and the arrow in Figure 20 as the 21st direction of the X direction) Confirmed. This cavity 32 may cause a short circuit due to residual moisture and the like. In addition, when using ACF or ACP (anisotropic conductive paste), due to the pressure from above the wafer, the conductive particles on the convex portion (those that are plated with gold or nickel on the polymer surface) are elastically deformed, Keep electrical contact on one side with the protrusions. However, the resin is still in a softened state immediately after the pressurizing device is released by the pressurizing device. Therefore, when the substrate is bent, it is stretched flatly by pressing, but the viscosity of the resin is not inferior to the elastic stress of the substrate when the substrate is restored. A gap is formed between the bump and the electrode. As the gap is enlarged, as shown in Figs. 17 and 18, the elastic deformation of the conductive particles is restored. 1237335 Specifically, the space generated between the recessed portion of the convex portion formed by the entangling of the conductive particles and the conductive particles 34, or the resin flowing into this space causes the contact area to decrease, resulting in an increase in resistance. That is, it was found that the occurrence of voids or the problem of particle compression was caused by releasing the pressure when the resin before the glass transition point (Tg temperature) was in a softened state. In other words, when the resin is heated and hardened, in order to release the pressure from above the wafer, the gas contained in the resin will not be expanded, and the ACF and other conditions will be used to prevent the viscosity of the resin from being increased. The elastic stress occurs when the conductive particles are restored under pressure, and the pressure is released after the resin is cooled below the Tg temperature. That is, the bonding method of the present invention is a bonding method in which a resin is sandwiched between a mounting member and a substrate, and the mounting member is mounted on the substrate. In the process of pressurizing the mounting member on the substrate with a pressurizing device, at least either the mounting member or the substrate is heated with a heating device to heat and harden the resin; and the cooling process is under pressure The heating device is cooled in the state; and after the cooling of the cooling heating device is completed, the pressurizing device is released from pressurizing the mounting member. In the process of providing resin and pressing the installation member to the substrate with a pressurizing device, at least one of the installation member or the substrate is heated by a heating device, and at the same time, the resin is heated and hardened to heat and press the installation member to the substrate. On the substrate. When the mounting member is heated and crimped to the substrate, the heating device is cooled, and then the pressure from the pressure device above the wafer is released. That is, as the heating device cools, the resin itself is also cooled. Therefore, the resin 1237335 releases the pressure from above the wafer in a substantially hardened state. Therefore, it is possible to suppress the expansion of the resin 1237335 due to the pressure outside the gas contained in the resin being removed. As a result, it is possible to prevent a cavity from occurring around the bump or between the bump and the bump due to the expansion of the gas. Therefore, it is possible to prevent a poor conduction between the bump and the substrate electrode or a gap between the bumps due to the occurrence of the void. Short circuit, etc. In addition, the joining method of the present invention is that the cooling process is preferably cooled to near the glass transition point of the resin used. That is, in the cooling process, it is necessary to cool the cooling device, and cool the resin bonded to the substrate and the mounting member to the glass transition point. Therefore, the pressure of the pressurizing device is released only when the resin is almost completely hardened. Therefore, it is possible to suppress the expansion caused by the external pressure of the gas contained in the resin in the pressurized state. As a result, it is possible to prevent voids occurring around the bumps or between bumps and bumps due to the expansion of the gas, thereby preventing poor conduction between the bumps and the substrate electrode caused by the occurrence of voids, or between bumps. Short circuit, etc. In addition, in the joining method of the present invention, when the resin is cooled to near the glass transition point in the cooling process, it is desirable to adjust the temperature of at least one of the substrate and the mounting member so that the temperature of the resin is near the glass transition point, and The amount of thermal expansion of the substrate and the mounting member from room temperature becomes approximately the same. That is, during the cooling process, the resin temperature becomes near the glass transition point. At this time, the temperature of at least one of the substrate and the mounting member is adjusted so that the thermal expansion amounts of the substrate and the mounting member from room temperature are approximately equal. Therefore, by using the difference between the shrinkage of the substrate and the mounting member, it is possible to avoid poor bonding or poor resistance caused by the mounting member and the substrate being warped. The thermal expansion amount of the substrate herein means, for example, the thermal expansion amount of the substrate portion corresponding to the length of the wafer as the mounting member. In addition, in the joining method of the present invention, it is preferable that at least one of cooling of the mounting member and heating of the substrate is performed for the temperature adjustment of the substrate and the mounting member. That is, when the mounting member is mounted on the substrate by direct heating by the mounting member, the temperature is increased in the order of being closer to the heating device, that is, in the order of the mounting member, the resin, and the substrate. In addition, since the substrate is not heated, the substrate itself has a heat releasing effect, and the temperature difference between the mounting member and the substrate becomes large. At this time, the installation member side should be actively cooled, or the substrate side should be naturally cooled in the open air condition or the substrate should be heated while actively cooling to adjust the temperature of the two members, so that the resin temperature is near the glass transition point. The thermal expansion difference from the substrate disappears. Therefore, the same effects as described above can be achieved. In addition, in the joining method of the present invention, it is preferable to cool the heating device during the cooling process so that the glass transition point of the resin used is lower than 20 ° C. That is, the resin is sandwiched between the mounting member and the substrate and pressurized by a pressing device, and the heating member is heated and pressure-bonded to the substrate while being heated by the pressing device. After the mounting member is heated and pressure-bonded to the substrate, the heating member is cooled down to a temperature below 20 ° C of the glass transition point of the resin used. With this cooling, the resin itself is also cooled, and reaches a substantially hardened state. Therefore, the same effects as described above can be achieved. The bonding method of the present invention is a bonding method in which a resin is sandwiched between a -10- 1237335 mounting member and a substrate to include mounting: a first heating process, heating the resin at a temperature of the temperature; and heating by the process After the resin is specified, the resin is heated at a temperature of about 50 ° C. With the joining method of the present invention, the temperature of the gas is used to heat the dendritic heat-curable resin. Therefore, even when gas is generated in the viscosity, the cavity can be prevented from occurring due to the gas. In addition, in the present invention, the joining angle is preferably less than 19 (TC, preferably the second force port. In addition, the first heating time should be less than 20 seconds. In this way, the heating process of the first heating process is The temperature is set higher than the thermal process to the second heating process, and the temperature is increased in a state where the degree of dendrite is high without generating gas. The body has a high stress viscosity, so in addition, the bonding method of the present invention cools the resin. The component is installed near the glass transition point and installed on the substrate. It is characterized by heating to emit gas lower than the resin itself and the second heating process. The first heating is higher than the set temperature of the first heating process to lower than the resin due to heating. After the fat itself, the temperature is higher when the resin is in a state where no gas is generated at a temperature higher than the heating temperature. At this time, stress occurs and the viscosity increases, so in the method, the first heating process The set temperature of the warming process is set to be higher than 19 (TC, and the specified temperature until the second heating process is set to be lower than 19 (TC, and the second 1 9 Ot). In addition, by setting the first force Time is set below 20 seconds That is, the fat becomes a substantially hardened state, and even if gas is generated as a result of stickiness, the gas can prevent voids and the like from occurring. In the middle, after the second heating process, it is preferable. It is cooled to a glass transition point of 1237335. Therefore, for example, in the case of a wafer as a mounting member, the occurrence of a cavity around or between the protrusions may not cause the expansion when the pressure is released, Deformation causes the resin to crack, and the resin can be completely hardened. In addition, in the joining method of the present invention, the mounting member is mounted on a substrate and the resin is heated and hardened to fix the mounting member to the substrate. Among them, it should be divided into a temporary crimping procedure for temporarily crimping the mounting member to the substrate, φ, and a formal crimping procedure for substantially completely curing the resin to fix the mounting member to the substrate, and the temporary crimping procedure is used as the first. The 1 heating process and the formal crimping process are used as the second heating process. By distinguishing between the temporary crimping process and the formal crimping process, the productivity-productivity can be improved. In addition, By increasing the number of formal crimping operations (m 1111 ihead), higher productivity can be achieved. / In addition, the bonding method of the present invention is a bonding method in which a resin is interposed between a mounting member and a substrate. The method and method for mounting the mounting member on the substrate is characterized in that it includes a temporary crimping procedure, and when the mounting member is mounted on a designated place of the coated resin on the substrate, it is coated on the substrate. The resin is temporarily crimped to the mounting member in a state of being heated and softened in advance; and the formal crimping procedure is to heat and harden the resin of the temporarily crimped mounting member joint to fix the mounting member on the substrate. The resin on the substrate has been installed with the installation member in a state of being heated in advance. That is, the resin has been heated and softened, so if the installation member is pressed against the resin installation, the gas involved in the installation is It is easy to leak between the installation member and the resin. Therefore, it is possible to reduce the gas involved in the installation member during installation. In addition, in the bonding method of the present invention, the heating temperature of the resin in the temporary crimping process should be set to a range of 60 ° C to 120 ° C, or the resin in the temporary crimping process is heated from the back of the substrate. The heating of the resin during or during the temporary crimping process is to supply hot air to the resin from above the substrate, and it is better to have a continuous or separate temporary crimping process and a formal crimping process. y Furthermore, the bonding method of the present invention is a bonding method in which a resin is sandwiched between a mounting member and a substrate to mount the mounting member on the substrate, and is characterized in that the mounting member is mounted The grounding speed is set to less than 10 mm / s when the installation has been coated on the designated place of the substrate. By using the bonding method of the present invention, the grounding speed of the mounting member to the substrate can be less than 10 mm / sec. The mounting member can be installed at a designated place of the coated resin, and the mounting member can be slowly pressed against the resin. During this pressing process, the gas drawn between the installation member and the resin easily leaks out. In addition, in the joining method of the present invention, the preferable resin is a resin doped with conductive particles. That is, when a mounting member (such as a wafer) is heat-pressed to a substrate, the conductive particles between the protrusions on the wafer side and the substrate electrodes are elastically deformed. The resin maintained in this state is cooled to become a substantially hardened state. Therefore, the elastic deformation of the conductive particles can be prevented from recovering, and the contact area of the conductive particles facing the wafer and the substrate can be fixed. In addition, the bonding device of the present invention is a bonding device for holding a resin between a mounting member and a substrate to mount the mounting member on the substrate, and is characterized in that it includes a holding table for placing and holding Substrate; pressurizing device to press the installation member to the designated place of the substrate to be held; heating device to add 1237335 heat-pressed installation member and heat-hardening resin; and cooling device to cool the device A heating device is provided in which the member is in a pressurized state. That is, the pressurizing device mounting member is pressurized to a prescribed position on the substrate held on the holding table via the resin by the pressurizing device mounting member, and is press-bonded to the substrate while being heated by the heating device. Then, the heating device for cooling and heating the installation member is depressurized. Therefore, as the heating device cools, the resin itself is also cooled and hardened almost completely. Therefore, it is possible to prevent voids that occur around or between the protrusions due to the expansion of the gas. Poor continuity between the bump and the substrate electrode, or a short circuit between the bumps may occur. In addition, in the joining device of the present invention, it is preferable to have a temperature control device. (1) The cooling temperature of the cooling device is controlled to be positive 2 (TC or less) of the glass transition point of each resin used. That is, the temperature is controlled to be used. Cooling of the cooling device | Each glass transition point of each resin is positive below 20 ° C to achieve the above effect. In addition, according to the bonding device of the present invention, the cooling device is preferably provided on the heating device The through hole of the gas flow path is formed, and the air flow device for blowing gas from the outside, or a first flow path provided inside the heating device, and a gas supply device for supplying gas to the first flow path can be installed. The cooling member for heat radiation on the outer periphery of the heating device includes a second flow path provided inside the heating device and a cooling water supply device for supplying cooling water to the second flow path. Furthermore, the second flow path It is better to face the heater element with the heater mode built in. In addition, in the joining device of the present invention, it is preferable to provide heating on the side of the holding table 1-4 1237335 and control the heating device. The temperature of each resin is used, that is, it is heated by the substrate provided on the holding table. That is, the glass of the resin provided with the installation member is transferred, and the difference between the linear expansion coefficient of the installation member and the substrate is not different. In addition, in the joint assembly of the present invention, the device is heated according to the temperature of the mounting member and the substrate, so that the resin is cooled to a temperature point of at least one side of the glass mounting member, and the distance between the substrate and the mounting member is also 'in the cooling process In the tree, the temperature between the substrate and the installation member is separated from the two chambers. As for the actual measurement conditions detected when the temperatures of the temperature member, the substrate and the resin are cooled, in addition, the 'joint device grease clip of the present invention is installed in the device. The feature of the installation member and the substrate is that it includes a holding table, and the position of the installation member is performed at a position where the installation member is placed and held on the holding table. The installation member should be installed on the substrate and held on the holding table. The substrate's slope glass transition point is less than or equal to 20 t. The heating device on the side keeps the mounting position at about 2 (TC or less, because Therefore, the difference in coldness can prevent warping of the substrate due to the two members. It is preferable to have a temperature control device in the center. When controlling the cooling device and the vicinity of the glass transition point on the holding table side, adjust the temperature of the substrate and the resin to approach The amount of thermal expansion at room temperature during glass transition is slightly equal. The iW degree is close to the glass transition point. At this time, the amount of thermal expansion at temperature is approximately equal. The adjustment control method is based on the comparative example and the benchmark obtained by prior testing. The temperature deviation obtained is set in advance as a bonding device. In order to mount the device member on the substrate between the trees, the substrate is held by h. The resin coating on the substrate on which the device is installed is designated to perform Device; and the grounding speed adjustment of the installation device when the speed control is installed is 1237335 less than 10 mm / sec. That is, an installation device is used to position and install the installation member at a designated place on which the resin held on the substrate held on the holding table has been coated. When the installation member is to be installed on the substrate, the grounding speed of the installation device is controlled to be less than 10 m / s e c by a speed control device. However, the above-mentioned effect v can be achieved [Embodiment] As a form to solve the conventional problem, it is as follows. An embodiment of the present invention will be described with reference to the drawings. < First Embodiment > In this embodiment, a case where a wafer of a mounting member is mounted on a substrate using a thermosetting resin such as A C P, A C F, N C P, N C F (non-conductive film), etc. will be described as an example. In addition, as the "installation member" in the present invention, it means, for example, an IC wafer, a semiconductor wafer, an optical element, a surface mount member, a wafer, a wafer, a TCP (conveying tape installation body), All forms such as FPC (flexible printed circuit) that are bonded to the substrate regardless of type or size, including C Ο G (C hi ρ Ο n G 1 ass) or TCP for flat display panel wafer bonding, and FPC OLB (Ou ter Lead Bonding). In addition, the "substrate" in the present invention refers to all forms of bonding to the mounting member, regardless of the types such as resin substrate, glass substrate, film substrate, wafer, and wafer. First, the device used in this embodiment will be specifically described with reference to the drawings. Fig. 1 is a perspective view showing the structure of the official crimping device of the joining device of the present invention. 16- 1237335. Fig. 2 is a front view showing the partial structure of the indenter part of the embodiment device. Fig. 3 is a view showing A side view of a partial structure of an indenter portion of the embodiment device. As shown in FIG. 1, the official crimping device 1 of the present invention is a movable stage 3 that holds a substrate 2 carried by a temporary crimping unit (not shown) horizontally, and a crimping head for heating and crimping a wafer 4 on the substrate. 5. When the wafer 4 is heated and pressure-bonded to the substrate 2, it is composed of a glass backup 6 supporting the substrate 2 below. As shown in FIG. 1, the movable table 3 includes a substrate holding table 7 that holds and holds the substrate 2. The substrate holding table 7 can be structured in two horizontal (X, Y) directions, up and down (Z) directions, and Z Move freely around the axis (0). As shown in FIG. 2, the indenter 5 is composed of a metal frame 9, a ceramic heater 10, and a ceramic pressing body 11 in the lower portion of a main body 8 composed of a metal tool. The ceramic frame 9 is attached to the tool body 8 with bolts 12, and the ceramic heater 10 and the ceramic pressing body 11 are sintered to the ceramic frame 9. In addition, the ceramic pressed body 11 is provided with, for example, a thermocouple, a temperature measuring resistor, and the like as a temperature detecting device 13. That is, the ceramic pressing body 11 detects the heat received from the ceramic heater 10 by the temperature detecting device 13 and transmits the detection result to the temperature control unit 21. As shown in FIG. 3, the ceramic frame 9 has a first flow path 15 for flowing and exhausting gas on the upper end surface of the heating portion of the ceramic heater 10, and passes through the long side direction of the lower end of the ceramic frame 9 (third X direction in the figure). In addition, the first flow path 15 is provided with a gas supply flow path 16 through -1 7-1237335 through which gas is supplied from the tool body 8. In addition, as shown in Fig. 2, the other end of the gas supply flow path 16 is supplied with gas from a gas supply device 18 through a pressure hose 17 having a valve V connected thereto. That is, the gas supplied from the gas supply device 18 passes through the gas supply flow path 16 and the gas flow path 15 in this order and is discharged through the openings 15 a at both ends of the first flow path 15. Therefore, the heat generated by the heating portion 10 a of the ceramic heater 10 is captured by the gas circulation, and both the ceramic heater 10 and the ceramic compact | 1 1 can be rapidly cooled. As shown in FIG. 4, the ceramic heater 10 is formed as a panel body in which the heating portion 10 a and the terminal portion 10 b are arranged in a T-shape with a specific thickness (for example, about 1 mm). In addition, the ceramic heater 10 is configured to cover the heating element 19 with a ceramic material which is an electrically insulating material, and the end portion of the heating element 19-the sub 20 projects from the terminal portion 10b. In addition, the ceramic material of the ceramic frame 9, the ceramic heater 10, and the ceramic pressing body 11 are formed by adding a specific amount of glass or the like to silicon nitride. In addition, the linear expansion coefficient of @ 陶瓷 架 9 is preferably equal to the linear expansion coefficient of the ceramic heater 10 and the ceramic compact 1 1. Furthermore, the thermal conductivity of such materials should be set with the ceramic heater 10 as a base point so that it becomes larger toward the pressing surface side (bottom in FIG. 2) of the ceramic pressing body 11 and more toward the opposite side (second in FIG. 2). (Above the figure) the smaller the mounting surface side of the ceramic frame 9 becomes. In the temperature control section 21, setting conditions corresponding to each resin used are input in advance from an external input device (not shown), such as a heating time, a glass transition point as a cooling temperature of the ceramic heater 10, and the like. . According to these input conditions and the results detected by the temperature detection device, the temperature of the ceramic heating -18-1237335 device 10 is controlled. For example, compare the actual measurement temperature transmitted by the glass temperature detection device 13 set in advance and control the temperature of the ceramic heater 10 according to the deviation. Specifically, the surrounding gas is supplied, and when the temperature drops below Tg, V is turned off. Next, the operation of one cycle of mounting a wafer on a substrate using the above-mentioned flowchart will be described using the flowchart in FIG. In addition, it is assumed in advance that the curing temperature of the resin is 2 2 (TC, glass to 1 1 2 Ot. In addition, in this embodiment, compared with the state where the wafer is temporarily crimped to the substrate in advance in the previous program The case where the wafer is completely formally crimped on the substrate is used as an example. < Step S 1 > Positioning of the substrate In the above-mentioned temporary crimping procedure, the resin temporary crimping plate 2 is transported to a formal crimping device by a transfer mechanism (not shown), and is transferred, adsorbed and held on the substrate holding of the movable table 3. Stage 7 The stage 7 is moved to the front by a drive mechanism (not shown) (between the indenter 5 and the g 1 assupup) 6 in the figure to hold the position so that the indenter 5 and the glass are clamped by the up and down direction. 6 < Step S 2 > Start the heating of the wafer. After the positioning of the substrate 2 is completed, a driver 5 (not shown) is used, and the wafer 4 is clamped by the indenter 5 and the glass backing 6 located below the substrate 2. Into. The indenter 5 starts heating and pressing the wafer 4. At this time, the ceramic heater 10 included in the indenter 5 is, for example, at the time point (t 0) at which the thermal compression bonding of the wafer 4 is started, the section 21 is set at 220 ° C. It is the same as the glass transition point and the temperature obtained when the heating and pressure bonding is started. Example device In this example, seven points (T g) are temporarily crimped and fed, which is explained. Wafer 4 of the base 1. The substrate 4. The substrate is held in the Y direction) and the substrate 4 is fixed to the wafer 4. The structure lowers the indenter. The back support (glass is connected to the substrate 2 as shown in Figure 6 (for temperature control, from the time point (t Ο) of -19-1237335 to the time point (t 1) when heating is completed) The temperature of the ceramic heater 10 was maintained at 220 ° C by the temperature control unit 21, and the wafer was heated and pressure-bonded to the substrate 2. As a result, the resin was heated and hardened by the heat conduction from the wafer 4. < Step S 3 > When the cooling starts and reaches the heating end time point (U), the main control unit M sends a heating completion signal to the temperature control unit 21, and a command signal from the temperature control unit 21 is transmitted according to the signal Open valve V to valve V. The supply of the gas from the gas supply device 18 is started by the opening of the valve V. The gas passes through the pressure-resistant hose 17 and the gas supply flow path 16 and flows into the first flow path 15. The inflowing gas flows through the openings 15a at both ends of the first flow path 15 and is discharged. As a result, the ceramic heater 10 and the ceramic pressing body 11 arranged under the first flow path 15 are rapidly cooled. < Step S 4 > Has the glass transition point been reached? At the same time as the cooling is started, the temperature of the indenter 5 is sequentially detected by the temperature detecting means 13 installed in the ceramic pressing body 1 1, and the actual measurement volume is transmitted to the temperature control unit 21. In the temperature control section 21, a comparison process between the glass transition point (T g) of the ceramic heater 10 and the measured temperature is set in advance for successive execution of the preset input. Here, if the test result does not reach the glass transition point (Tg), the cooling is continued while the T g is repeatedly compared with the actual measurement. On the contrary, when the actual measurement reaches T g (time point 12 shown in FIG. 6), the process proceeds to step S 5. That is, when the temperature of the ceramic heater 10 is cooled to Tg, the wafer 4 heated by the indenter 5 is also cooled, and the resin fixing the wafer 4 to the base-20-1237335 plate 2 is also cooled. . In particular, this cooling is accompanied by the fact that the resin temperature is cooled to the glass transition point (T g), and the resin is almost completely hardened. In addition, although the cooling temperature of the ceramic heater 10 is set at the glass transition point (Tg) of the resin in this embodiment, the cooling temperature may also be set at the glass transition point (Tg) corresponding to the type of resin used. It is within the range of less than 20 ° C. , < Step S 5 > When the cooling pressure reaches T g, the pressure on the wafer 4 is released, and the indenter 5 is returned to the upper preparation position. At this time, the valve V is blocked due to a command signal from the temperature control section 2 1, and the temperature of the ceramic heater 1 〇 is controlled to rise to 2 2 (TC-( The time point 13 shown in FIG. 6). That is, when the resin is cooled to T g and is almost completely hardened, the pressure from above the wafer 4 is released, so the gas in the resin can be prevented. Swelling. That is, the expansion of the gas can be suppressed by hardening the resin, and cavities can be suppressed around the protrusions. In addition, it can be used in a state where the contact area is expanded due to the elastic deformation by the pressure of the indenter 5. The resin hardens the elastic recovery of the conductive particles located between the protrusion and the substrate electrode. In other words, due to the hardening of the resin, the elastic stress of the conductive particles relative to the elastic deformation of the conductive particles is restored, and the resin exceeds the viscosity to maintain the elastic deformation of the conductive particles. As a result, voids that occur between the bumps and conductive particles can be removed. < Step S 6 > Taking out the substrate As soon as the pressurization of the indenter 5 is released, the substrate holding table 7 is moved to the substrate transfer -2 1-1237335 connection position. The substrate 2 moved to the transfer position is transferred to a substrate storage unit by a substrate transfer mechanism (not shown) and stored in a substrate collection box. At this point, the bonding of the wafer 4 on one substrate 2 is completed. As described above, the wafer 4 can be heated and pressure-bonded to the substrate 2 and heated to harden the resin, and then the ceramic heater 10 can be rapidly cooled by gas to the glass transition point (Tg) of each resin used. The resin fixed on the wafer 4 to the substrate 2 is cooled to T g. Therefore, the resin will be in a state of being almost completely hardened. Therefore, by releasing the pressure from above the wafer in this state, the cause of the problems previously identified by the inventors can be eliminated. Specifically, in the previous method, when the indenter 5 was raised to release the pressure in a softened state before the resin was hardened, voids occurred as if to cover around the protrusions due to the rapid expansion of the gas in the resin. However, in this embodiment, the pressure is released while the resin is hardened, so the viscosity of the resin exceeds the stress of gas expansion, and cavitation can be prevented. In addition, when A C F or A C P was previously used, due to the restoration of the elastic deformation of the conductive particles, the wafer was lifted up, and a void was generated between the protrusion and the conductive particles. However, in this embodiment, the pressure from above the wafer is released in a state where the resin is hardened. Therefore, the viscosity of the resin exceeds the elastic stress caused by the recovery of the elastic deformation of the conductive particles, which can prevent the protrusion and the substrate electrode Connection is bad. < Second Embodiment > In the first embodiment described above, a formal crimping apparatus for heating and crimping the wafer 4 to the substrate 2 and being substantially completely fixed has been described. In the present embodiment-22-1237335, Then, a bonding device capable of mounting the wafer 4 on the substrate 2 for temporary compression bonding and formal compression bonding will be described. In addition, since the structure of the bonding device only around the indenter is different from that of the device of the first embodiment, the same parts are denoted by the same reference numerals, and different parts will be described. Fig. 7 is a perspective view showing a schematic structure of the joining device of the present invention, and Fig. 8 is a front view showing a partial structure around the indenter. As shown in FIG. 8, the bonding device 100 is composed of the following components, except that the wafer 4 is suction-held, «, and positioned at a designated position on the substrate coated with the resin G: The crimping mechanism 1 010 is for crimping the wafer 4 to the substrate 2; the movable table 3 is for keeping the substrate horizontal; the glass back 6 is supported by the lower part when the wafer 4 is crimped to the resin part of the substrate 2 Substrate; 2; heater 102 for heating glass backing 6; nozzles 10 3, 104 for supplying gas to substrate 2 from up and down directions; and control section 106 for controlling the whole And other components. The installation-heating and crimping mechanism 101 is shown in Fig. 7 and has a pressure head 107 for holding and holding the wafer 4 underneath. The structure can be moved up and down (X) and horizontally (Z). In addition, the indenter includes a ceramic heater (not shown) and a cooling device for cooling the heater. In addition, the structure of this indenter is slightly the same as that of the device of the first embodiment, so its detailed description is omitted. The structure of the indenter 107 is not limited to this configuration. For example, a structure without a cooling device inside the indenter may be used. The movable table 3 includes a substrate holding table 7 that holds and holds the substrate 2. The substrate holding table 7 is configured to move freely in the horizontal biaxial (X, Y) direction, the up-down (Z) direction, and the Z-axis surrounding (0) direction. -23- 1237335 The heater 1 02 heats the glass back 6 and conducts the heat to the substrate 2 and the resin G on the substrate for heating. The heater 102 is installed on the side wall of the glass back 6 at a specific distance from the substrate 2 as shown in FIG. 8 and is controlled by a voltage controller (not shown) that receives a control signal from the control unit 106. β controls its temperature. The nozzle 103 arranged below the substrate is used for suppressing the heat conductor in the vicinity of the portion where the glass backrest 6 contacts the substrate 2 when the glass backrest 6 is heated, and can supply gas into the substrate. ® In addition, the nozzle 104 arranged above the substrate is used to cool the wafer 4 after heating and crimping, and can supply gas to the wafer mounting portion. In addition, the two nozzles 103, 104 can be supplied with gas from the gas supply source 109 by the opening and closing operation of the valve V in accordance with a control signal from the control unit 106. The control unit 1 〇6 adjusts the grounding speed of the mounting-heating and crimping mechanism 1 〇 1 when the wafer 4 is mounted on the substrate 2 to adjust the temperature of the heater 1 0 2 that heats the glass back φ 6 And adjusting the gas supply from the nozzles 10 3, 104 for cooling the substrate 2 and the wafer 4. In addition, the specific control laws of the relevant ministries are explained below. Second, when using the above-mentioned bonding device to mount a wafer on the coated resin (ACF) portion of the substrate, the wafer is mounted on the substrate while the resin temperature is adjusted before the wafer is mounted on the substrate, and then a temporary crimping process is performed. The formal crimping procedure and cooling procedure are explained by the method of fixing the wafer to the substrate. The specific method is described below based on the flowchart in FIG. 9 and the temperature profile in FIG. 10. In addition, the temperature profile shown in Figure 10 is -24-1237335, which is convenient for explanation. It is displayed after the chip is installed. < Step S 1 0 > Positioning of the substrate The substrate 2 is transferred to the bonding apparatus 100 by a transfer mechanism (not shown). The substrate 2 is transferred to the substrate holding table 7 of the movable table 3 to be held by suction. The substrate holding table 7 is moved between the indenter 1 07 and the glass back 6 by a driving mechanism (not shown) in the front direction (Y direction in FIG. 7) to position the substrate 2 so that the indenter 1 0 7 The wafer 4 can be clamped into the wafer 4 in the up-down direction to position the substrate 2. < Step S 1 1 > Resin heating After the positioning is completed, the heater 102 starts to operate and heats the glass backing 6, and the heat is transmitted to the resin G on the substrate and the resin G is softened. Moreover, in the case of this embodiment, the resin is A C F, so the resin temperature is set in the range of 60 to 120 ° C. The ideal temperature is 80 to 10 ° C. If the resin temperature is lower than 60 ° C, the resin G cannot be sufficiently softened. Therefore, when the wafer 4 is installed, the gas involved in the interface between the wafer 4 and the resin G is not easy to escape. As a result, the gas remaining at the interface and the like becomes hollow. In addition, if the resin temperature exceeds 120 ° C, the resin G hardens. < Step S12 > Mounting of the wafer The wafer 4 located at a specific position is suction-held and positioned by the indenter 107, and is mounted on the resin portion in a softened state on the substrate. When the wafer 4 is mounted on the resin, the grounding speed is set to less than 10 mm / sec. The ideal range is 1 to 5 mm / second. If the grounding speed exceeds 10 mm / sec, there is no time for gas to escape when the wafer 4 is pressed against the resin portion. Immediately after the wafer 4 is mounted, the heating of the heater 102 is stopped. -25- 1237335 < Step S 1 3 > First heating program In the first heating program equivalent to the temporary crimping program, when heating according to the resin G used, no gas is generated from the resin G (hereinafter referred to as "▼" ") At a set temperature, the wafer 4 is heated and hardened while pressing the wafer 4 with the indenter 107 for a predetermined time, and the resin G is made to have a predetermined viscosity or more. Here, the specified viscosity means that the outgassing stress generated when the resin G is heated at a high temperature in the next second heating process can be suppressed. _ In addition, when the set temperature of the first heating program is, for example, the resin G is ACF, as shown in FIG. 10, the temperature of the heater in the indenter is adjusted between 10 and t 1 in the first heating program. The resin temperature does not exceed 190 ° C (170 ° C in Figure 10). The set temperature is ideal from 120 to 170 ° C. · If the set temperature is lower than 120 ° C, in order to slow down the hardening speed of resin G, sufficient resin viscosity cannot be obtained at the same time. Conversely, degassing occurs when the set temperature exceeds 1 90 ° C. That is, the stress of outgassing exceeds the viscosity of the resin in the uncured state, and voids and the like are likely to occur at the interface between the wafer 4 and the substrate 2. φ In addition, the heating time from 10 to t 1 shown in Fig. 10 is set within 20 seconds. It is preferably 1 to 5 seconds. Normally when using A C F, the set temperature must be hardened within 20 seconds at 180 to 190 ° C, but even if less than this time, it can be hardened without voids. In addition, the set temperature and heating time can be appropriately set and changed in accordance with the hardening conditions of the resin used and the like. < Step S 1 4 > Once the resin hardening of the second heating process and the first heating process is completed, it is between t 1 and t 2 shown in FIG. Heating temperature: -26-12,37335 degrees higher temperature to heat harden resin. The setting temperature at this time must be adjusted to the temperature of the heater inside the indenter so that the resin exceeds 19 Ot. The set temperature is ideally in the range of 200 to 22 (TC. If the second heating temperature is lower than 190 ° C, the hardening progress of the resin will be impaired.. That is, 'in the second heating program 》 Because the first heating procedure of the rule is used to increase the viscosity of the resin in advance, even if the temperature rises above 190 ° C so that the resin is outgassed, the resin viscosity can still suppress the outgassing stress. As a result, voids, etc. can be prevented In addition, if the set temperature exceeds 2 2 CTC or even 2 4 (TC, there is a problem with the heat resistance of the resin. In addition, the set time of the second heating program for heating the resin G is in this embodiment It is set to, for example, 2 seconds. Here, the time from the start of the first heating program (10) to the end of the second heating program (t2) can be set within 20 seconds. In this case, the resin G can also be set. Hardened without cavitation. In addition, this second heating procedure corresponds to a formal crimping procedure. < Step S 1 5 > Start cooling As soon as the second heating process is completed, cooling is started so that the resin temperature is changed from the time point t2 in Fig. 10 to the glass transition point (time point t3). Specifically, cooling is performed by the following procedure. First, like the formal crimping device of the first embodiment, a valve (not shown) is opened based on a heating stop (0 F F) signal from the control unit 106, and gas is supplied to the inside of the indenter. With the supply of this gas, the ceramic heater and the ceramic compact in the head are rapidly cooled. At this time, Resin G received the cooling effect of -27-1237335 by cooling in the open state of the atmosphere and heat transfer caused by actively cooling the indenter 107. When the temperature of the specified condition is reached, the cooling of the indenter 10 is stopped. The control section 106 opens the operation valve V, and supplies gas to the wafer 4 from the nozzle 104 on the substrate, and at the same time, the heater 10 Temperature. That is, the temperature of the wafer 4 and the substrate 2 is adjusted so that the temperature of the resin G is near the glass transition point, and the thermal expansion amount of the substrate 2 and the wafer 4 caused by the room temperature state opened to the atmosphere becomes approximately the same. Therefore, it is possible to prevent warping that easily occurs when the wafer 4 and the substrate 2 shrink due to cooling. In addition, the method of setting the time or conditions for these temperature adjustments is to set the conditions while measuring each temperature of the wafer 4, the substrate 2, and the resin G by using a prior test. In addition, in this embodiment, the thermal expansion amount of the substrate 2 refers to the thermal expansion amount of the portion where the wafer 4 is mounted and the substrate 2 in a specific area surrounding the portion. This area is arbitrarily set according to the size of the wafer 4 and the like. < Step S 1 6 > Depressurization When the cooling temperature reaches the glass transition point, the indenter 107 is released from pressurizing the wafer 4 and the indenter 107 is returned to the upper preparation position. < Step S 1 7 > Taking out the substrate As soon as the pressurizing force of the indenter 107 is released, the substrate holding table 7 is moved to the substrate transfer position. The substrate 2 moved to the transfer position is transferred to a substrate storage unit by a substrate transfer mechanism (not shown) and stored in a substrate recovery box (a m g a z i n e). This concludes the bonding of the wafer 4 on one substrate 2. Then, the present inventors conducted experiments to confirm the occurrence of voids at the time of changing the grounding speed (h e a d s p e e d) when the wafer was mounted on the substrate using the apparatus of the second embodiment and the resin softening temperature when the wafer was mounted -28-1237335. The results will be described below. < Specific example > A highly transparent lead-free glass (C r 0 w n g 1 a s s) was used as a glass substrate, and A C F was used as a resin for coating an electrode portion on the substrate. At this time, an A C F particle having a particle diameter of 3.5 μm and a number of particles per unit area of 1 million particles / m m 3 was coated on a glass substrate to have a thickness of 35 μm. In addition, the recommended joining conditions for ACF are set, that is, the temperature of the resin used without being degassed (〇utgas) is set to 190 ° C or less, and the temperature of the substantially completely hardened resin is set to 2 2 . In addition, the ground speed (headspeed) when the wafer is mounted on the substrate is set to four types of 1, 3, 5, and 10 (mm / sec), and the resin when the wafer is mounted on the substrate at each ground speed is used. Experiments were performed at temperatures of 15 0, 17 0, 18 0, 2 0 0, and 2 2 0 (° C). In addition, the temperature of each resin was heated until the resin hardened. Figure 22 shows the results obtained from the experiments. The points under each condition were obtained as follows. From the back of the substrate, visually confirm the occurrence of voids around the bumps and areas other than the bumps and the occurrence of large cracks larger than the voids, and obtain points based on their number. Specifically, for holes, if it is not possible to confirm for each designated area, "0" points are assigned to each area. If several confirmations can be made, ^ 1 "points are assigned to each area. At that time, a "2" point is given. In addition, the same points are assigned to cracks, and the number of voids and cracks is calculated and calculated. From Figure 22, it can be determined that when the substrate temperature is 17 (TC, the wafer is mounted on the substrate at a ground speed of 5 mm / sec to harden the resin, the number of points can be -29-1237335 ^ 〇 "without confirmation. Excellent wafer mounting such as cavities, etc. That is, all the gases involved in the interface between the wafer and the resin have been exhausted when the wafer is mounted. In addition, the temperature is below 190 ° C, which is the recommended bonding condition. By setting the grounding speed within the range of 1 to 1 mm / sec, it was also confirmed that the occurrence of voids and the like caused by the entrainment of gas can be reduced. In addition, the softening temperature of the resin is between 150 ° C and 20 (TC In the above case, the reason for the high point of voids is as follows: g The resin softening temperature is 15 (at TC, it is much lower than the ACF recommended joining conditions and the resin is not sufficiently softened, so the gas involved in the interface between the wafer and the resin cannot be It completely escapes and is included. In addition, when the softening temperature of the resin exceeds 200 ° C, the temperature at which deaeration does not occur due to exceeding the recommended and recommended joining conditions of ACF is a void caused by the occurrence of outgassing. , By mounting the wafer on the substrate The resin G is heated in advance to soften it, and at the same time, the grounding speed when the wafer is grounded to the resin G can be excluded. Gases involved in the interface between the wafer 4 and the resin G during installation can be eliminated. As a result, the gas can be prevented from being involved. Cavities after resin hardening, etc. In addition, in the first heating procedure after the wafer is mounted, the resin G is heated and hardened in advance for a specified time at a temperature that does not cause outgassing when the resin G is used for heating. The temperature higher than the first heating process, the second heating process that completely hardens the resin. At the time point of the first heating process, because the resin viscosity exceeds the stress of outgassing that occurs in the second heating process, it can be prevented. Cavities, cracks, etc. caused by outgassing. -3 0- 1237335 In addition, when the resin G is cooled to the glass transition point after the second heating process, the wafer 4 is cooled by supplying gas to the resin The temperature of G is close to the glass transition point, and the thermal expansion amounts of the substrate 2 and the wafer 4 to room temperature become equal. At the same time, the heating temperature of the substrate 2 and the wafer 4 is reduced to a temperature lower than the glass transition point. The substrate 2 adjusts the temperature of the two members, thereby eliminating the warpage that occurs when cooling the two members without controlling the amount of thermal expansion. In addition, the resin is released when the resin G is almost completely cured at the glass transition point. (Head) 107 is pressurized, so that warpage that easily occurs due to the difference in the thermal expansion amount between the substrate 2 and the wafer 4 can be more reliably relieved. The present invention is not limited to the above embodiment, and may be modified and implemented as follows. (1 ) In the first embodiment, in the previous stage of the temporary crimping procedure, the wafer is temporarily crimped to the specified location of the substrate in advance, and the wafer is fully crimped to the substrate. In a batch process of crimping, a wafer is mounted on a substrate without temporary crimping. At this time, as long as the suction hole for sucking and holding the wafer 4 is provided at the lower end of the indenter 5, and an identification device is provided below the substrate 2, the identification position on the substrate 2 of the substrate holding table 7 and the position of the wafer 4 are identified. Just mark the position and locate it. (2) In the first embodiment, although the ceramic heater 10 is installed on the indenter 5 and the resin is heated only above the wafer 4, the substrate heater 7 or the wafer 4 may be connected to the substrate only. Heating devices such as ceramic heaters are installed on both sides of the holding table. At this time, the temperature of the heater on the substrate holding stage 7 should be set to be the same as the glass transition point (Tg) of the resin used. 1237335 As described above, by setting the heating device on the substrate holding stage 7 to Tg, the temperature of the wafer 4 and the substrate 2 when the resin is almost completely hardened can be kept the same. Therefore, when the resin is previously heated and hardened only by heating on the side of the indenter 5, the warpage which is easily caused by the deformation of the substrate 2 due to the difference in the linear expansion coefficient between the wafer 4 and the substrate 2 can be removed. In addition, the heating device is not limited to a ceramic heater, as long as it can heat-harden the resin. (3) In the first embodiment, the first flow path 15 is provided as a cooling device along the upper side I of the ceramic heater 10, but it can be modified and implemented as follows. < Modification 1 > As shown in the perspective view of the indenter 5 in FIG. 11 and the side view in FIG. 12, _, a through hole 22 may be provided in the side wall of the ceramic frame 9 in the horizontal direction, and the outside A gas is blown into the through hole by a blower or the like to circulate the gas. In addition, as shown in FIG. 11, the through-hole 22 may be combined with the structure of the indenter 5 of the above-mentioned embodiment to supply gas to the inside of the pressure φ head 5, or may be pressed only by the through-hole 22. The first 5 are cooled. < Modification 2 > As shown in Figs. 1 to 3 of the front view of the indenter 5, multiple layers of taper shapes extending from the base end portions of the side walls of the ceramic frame 9 and the tool body 8 to the horizontal direction may be provided. 23's cooling member (fin). Since the plurality of cooling members 23 are provided in this way, the heat radiation effect of the indenter 5 can be improved, and the indenter 5 can be cooled. In addition, the cooling member 23 is preferably a member having a high heat radiation effect, and for example, -3 2-1237335 metal is preferable. Furthermore, as shown in FIG. 12, the cooling member 23 may be combined with the structure of the head 5 of the first embodiment that supplies gas to the inside of the head 5, and the cooling member 23 may also be used to perform the pressing. The first 5 are cooled. - < Modification 3 > In the first embodiment and each modification, the gas is used for cooling. However, the ceramic heater 10 may be cooled by cooling water. Specifically, as shown in the side view of FIG. 14, a “U” -shaped second flow path 2 5 may be provided so that the cooling water supplied by the cooling water supply device 2 4 runs along the ceramic heater 10. Loop above. (4) In the first embodiment, the head 5 is cooled by using gas or cooling water, but other cooling media may be used. For example, the liquid nitrogen supply may be circulated in the second flow path. (5) In the second embodiment, the temporary crimping procedure and the formal crimping procedure are separately implemented by using one bonding device 100, but it is also possible to separately provide a device for the temporary φ crimping procedure and the formal crimping procedure. At this time, the formal crimping device is only used for heating and crimping the wafer 4 which is temporarily crimped on the substrate in the temporary crimping procedure, so the function of holding and holding the wafer 4 in the indenter portion may not be provided. Setting up the temporary crimping device and the formal crimping device separately in this way will increase the productivity. (6) In the second embodiment, the heat of the heater 102 is transferred to the resin G using the glass backing 6 as a method of softening the resin before the wafer is mounted, but a nozzle or the like may be arranged above the substrate, for example. Hot air is blown against the resin to soften it. In addition, an arm having a heater 1237335 that can be moved above the substrate can be moved to the vicinity of the resin, and the resin can be softened in a non-contact state by using the radiant heat of the heater. < Industrial availability > As described above, the bonding method of the present invention and its device are suitable for bonding a wafer part such as a semiconductor wafer to a substrate of a flat display panel such as liquid crystal, EL (electric field emission), and plasma display. class. [Brief description of the drawings] Fig. 1 is a perspective view showing a schematic structure of a formal crimping device according to the first embodiment. Fig. 2 is a front view showing a partial structure of a he ad of the apparatus of the first embodiment. Fig. 3 is a side view showing a partial structure of the indenter of the apparatus of the first embodiment. Fig. 4 is a perspective view showing a partial structure of a ceramic heater. Fig. 5 is a flowchart showing a joining method. Fig. 6 is a diagram showing a temperature control profile of the indenter. Fig. 7 is a perspective view showing a schematic configuration of a joining device according to the second embodiment. Fig. 8 is a front view showing a partial structure around a pressure head of the apparatus of the second embodiment. Fig. 9 is a flowchart showing a joining method using the apparatus of the second embodiment. Figure 10 shows the temperature control profile of the indenter. Fig. 11 is a perspective view showing a partial structure of the indenter according to the first modification. Fig. 12 is a side view showing a partial structure of an indenter according to a first modification. -34- 1237335 Figure 13 is a front view showing a partial structure of an indenter according to a second modification. Fig. 14 is a side view showing a partial structure of an indenter according to a third modification. FIG. 15 is a cross-sectional view when a wafer is bonded to a substrate by a conventional method. FIG. 16 is a cross-sectional view when a wafer is bonded to a substrate by a conventional method. FIG. 17 is a cross-sectional view when a wafer is bonded to a substrate by a conventional method. Fig. 18 is a sectional view taken along the arrow A-A in Fig. 17. FIG. 19 is a cross-sectional view when a wafer is bonded to a substrate by a conventional method. Fig. 20 is a plan sectional view when a wafer is bonded to a substrate by a conventional method. FIG. 21 is a longitudinal cross-sectional view of the wafer when it is bonded to the substrate by the previous method, as seen in the direction of the arrow in FIG. 20. Fig. 22 is a diagram showing the results of experiments performed using the apparatus of the embodiment. [Description of representative symbols of main parts] 1 Formal crimping device 2 Substrate 3 Movable stage 4 Wafer 5 Indenter 6 Glass back support 7 Substrate holding stage 8 Body 9 Ceramic _ frame 10 Ceramic plus ^ \\\ 器 10a Heating unit 1237335 I 〇b Terminal section II Ceramic body 1 2 Bolt 13 Temperature detection device 1 5 Opening at both ends of the first flow path 15a 16 Gas supply flow path 17 Pressure hose 18 Gas supply device 1 9 Heating element 2 0 Terminal 2 1 Temperature control unit 22 Through hole 23 Cooling member 2 4 Cooling water supply device 25 Second flow path 100 Joining device 101 Installation-heating and crimping mechanism 1 02 Heater 1 0 3 Nozzle 1 04 Nozzle 10 6 Control unit 10 7 Indenter 10 9

氣體供應源 -36-Gas supply -36-

Claims (1)

1237335拾、申請專利範圍1237335 Scope of patent application 第92 1 10035號「接合方法及其裝置」專利案 (94年1月27日修正） 1 . 一種接合方法，係使樹脂夾設在裝設構件與基板之間以 將裝設構件裝設於基板之方法，其特徵爲包括： 加熱壓接過程，在以加壓裝置將裝設構件加壓於基板 之過程中，爲使上述樹脂加熱硬化而以加熱裝置加熱裝 設構件或基板當中任一方、或裝設構件與基板雙方；以Patent No. 92 1 10035 "Jointing Method and Apparatus" (Amended on January 27, 1994) 1. A joining method in which a resin is sandwiched between a mounting member and a substrate to mount the mounting member on The substrate method includes the following steps: heating and crimping, heating the installation member or the substrate by a heating device to heat and harden the resin in the process of pressing the installation member to the substrate by a pressing device; , Or both the component and the substrate; 及 冷卻過程，在將上述裝設構件加壓的狀態下，冷卻上 述加熱裝置；而且 在上述加熱裝置之冷卻結束後，解除上述加壓裝置對 裝設構件之加壓.。 2 .如申請專利範圍第1項之接合方法，其中上述冷卻過程In the cooling process, the heating device is cooled in a state where the installation member is pressurized; and after the cooling of the heating device is completed, the pressurizing device is released from pressurizing the installation member. 2. The joining method according to item 1 of the scope of patent application, wherein the above cooling process 係由所使用樹脂之玻璃轉化點冷卻到成爲可抑制樹脂 内的氣體或/及除氣之膨脹的樹脂黏度爲止。 3 .如申請專利範圍第2項之接合方法，其中上述冷卻過程 在將樹脂冷卻時，調節基板與裝設構件當中任一方之溫 度或裝設構件與基板雙方的溫度，俾使樹脂之溫度爲在由 玻璃轉化點到可抑制樹脂内的氣體或/及除氣之膨脹的 樹脂黏度爲止的範圍，且基板與裝設構件之依室溫的熱 膨脹量成爲相等。 4 .如申請專利範圍第3項之接合方法，其中上述基板與裝 1237335 設構件之溫度的調節爲進行裝設構件之冷卻或基板之 加熱之任一方，或執行裝設構件之冷卻與基板之加熱雙 方。 5 .如申請專利範圍第1項之接合方法，其中上述冷卻過程 係將加熱裝置冷卻，俾使成爲所使用之樹脂之玻璃轉化 點之正2 0 °C以下。 6 . —種接合方法，係使樹脂夾設在裝設構件與基板之間以 將裝設構件裝設於基板，其特徵爲包括： 第1加熱過程，以樹脂本身藉由加熱未達到發生氣體 的溫度之溫度加熱樹脂；以及 第2加熱過程，以上述第1加熱過程加熱樹脂於指定 時間後，以高於第1加熱過程之設定溫度的溫度加熱樹 脂。 7 .如申請專利範圍第6項之接合方法，其中上述第1加熱 過程之設定溫度低於1 9 0 °C，上述第2加熱過程之設定 溫度超過1 9 0 °C。 8 .如申請專利範圍第6項之接合方法，其中由上述第1加 熱過程至上述第2加熱過程爲止之指定時間爲少於20 秒。 9 .如申請專利範圍第6項之接合方法，其中上述第2加熱 過程之後，將上述樹脂由玻璃轉化點冷卻至成爲可抑制 樹脂内的氣體或/及除氣之膨脹的樹脂黏度爲止。 1 0 .如申請專利範圍第6項之接合方法，其中在將上述裝設 -2- 1237335 構件裝設於基板並將樹脂加熱硬化直到將裝設構件固 定於基板爲止的過程中，分成將裝設構件暫時壓接於基 板之暫時壓接程序，以及將樹脂大致上完全硬化並將裝 設構件固定於基板之正式壓接程序，上述暫時壓接程序 定爲第1加熱過程，上述正式壓接程序定爲第2加熱過 程。 1 1 . 一種接合方法，係使樹脂夾設在裝設構件與基板之間以 將裝設構件裝設於基板之方法，其特徵爲包括： 暫時壓接程序，在上述基板上塗覆樹脂之指定處裝設 裝設構件時，事先將塗覆於該處之樹脂加熱成軟化之狀 態下，暫時壓接裝設構件；以及 正式壓接程序，將上述暫時壓接之裝設構件接合部之 樹脂再加熱硬化以固定裝設構件於基板上。 1 2 .如申請專利範圍第1 1項之接合方法，其中上述暫時壓 接程序中之樹脂的加熱溫度係設定於 6 0 °C至1 2 0 °C之 範圍內。 1 3 .如申請專利範圍第1 1項之接合方法，其中上述暫時壓 接程序中之樹脂之加熱係由基板之背面進行。 1 4 .如申請專利範圍第1 1項之接合方法，其中上述暫時壓 接程序中之樹脂之加熱係由基板上方係將熱風朝樹脂 供給。 1 5 .如申請專利範圍第1 1項之接合方法，其中上述暫時壓 接程序與正式壓接程序可以連續或分開設置。 1237335 1 6 . —種接合方法，爲使樹脂夾設在裝設構件與基板之間以 將裝設構件裝設於基板，其特徵爲：將裝設構件裝設在 已將樹脂塗覆於上述基板之指定處的接地速度設定爲 小於1 0 m m /秒。 1 7 .如申請專利範圍第1項之接合方法，其中上述樹脂爲摻 入導電粒子之樹脂。 1 8 . —種接合裝置，爲使樹脂夾設在裝設構件與基板之間以 將裝設構件裝設於基板，其特徵爲具備： 保持台，用於載置保持上述基板； 加壓裝置，將裝設構件加壓於上述被保持之基板的指 定處； 加熱裝置，加熱已加壓之狀態的裝設構件、加熱硬化 樹脂；以及 冷卻裝置，用於冷卻對上述裝設構件呈加壓狀態之加 熱手段。 1 9 .如申請專利範圍第1 8項之接合裝置，其中具備溫度控 制裝置，將上述冷卻裝置之冷卻溫度控制成使所使用每 一樹脂之玻璃轉化點之正2 0 °C以下。 2 0 .如申請專利範圍第1 8項之接合裝置，其中上述冷卻裝 置係在上述加熱裝置設置貫穿孔做爲氣體流路，並由外 部吹送氣體之送風裝置。 2 1 .如申請專利範圍第1 8項之接合裝置，其中上述冷卻裝 置係由設置於上述加熱裝置內部之第1流路、以及將氣 >4- 1237335 體供給至該第1流路之氣體供應裝置所構成。 2 2.如申請專利範圍第1 8項之接合裝置，其中上述冷卻裝 置爲安裝於上述加熱裝置外周之用於散熱之冷卻構件。 2 3 ·如申請專利範圍第1 8項之接合裝置，其中上述冷卻裝 置係由設置於上述加熱裝置內部之第2流路、以及將冷 卻水供給至該第2流路之冷卻水供應裝置所構成。 2 4 .如申請專利範圍第2 3項之接合裝置，其中上述第2流 路是面向內裝有加熱器模式之加熱構件。 2 5 .如申請專利範圍第1 9項之接合裝置，其中上述保持台 側具有加熱裝置，且控制上述加熱裝置之溫度，俾使保 持於上述保持台之基板溫度成爲每一被使用之樹脂之 玻璃轉化點之正2 0 °C以下。 2 6 .如申請專利範圍第2 5項之接合裝置，其中具備溫度控 制$置’係依據裝設構件與基板之溫度來控制冷卻裝置 與保持台側之加熱裝置，以調節基板或裝設構件當中任 一方或裝設構件與基板雙方之溫度，俾使在要冷卻上、'抵 樹脂時，樹脂的溫度係在由玻璃轉化點至可抽 _制樹脂内 的氣體或/及除氣之膨脹的樹脂黏度的範圍，η 且基板與 裝設構件之依室溫的熱膨脹量成爲相同。 2 7 . —種接合裝置，爲使樹脂夾設在裝設構件與甚 藝披之間以 將裝設構件裝設於基板，其特徵爲具備： 保持台，用於載置保持上述基板； 裝設裝置，在已被載置保持在保持台之基桥^ A 攸上的樹脂 1237335 所塗覆之指定處上，進行裝設構件之定位以進行裝置； 以及 速度控制裝置，將裝設上述裝設構件於基板時之裝設 裝置之接地速度調整爲小於10mm/秒。It is cooled from the glass transition point of the resin used to the viscosity of the resin which can suppress the expansion of gas or / and outgas in the resin. 3. The bonding method according to item 2 of the scope of patent application, wherein in the above cooling process, when the resin is cooled, the temperature of any one of the substrate and the mounting member or the temperature of both the mounting member and the substrate is adjusted so that the temperature of the resin is In the range from the glass transition point to the viscosity of the resin capable of suppressing the expansion of gas in the resin and / or outgassing, the thermal expansion amount of the substrate and the mounting member at room temperature becomes equal. 4. The bonding method according to item 3 of the scope of patent application, wherein the temperature adjustment of the substrate and the mounting member 1237335 is performed by either cooling the mounting member or heating the substrate, or performing cooling of the mounting member and the substrate. Heat both sides. 5. The bonding method according to item 1 of the scope of patent application, wherein the above cooling process is to cool the heating device so that the glass transition point of the resin used is positive below 20 ° C. 6. A bonding method in which a resin is sandwiched between a mounting member and a substrate to mount the mounting member on the substrate, and is characterized by including: a first heating process in which the resin itself does not reach a generation gas by heating And heating the resin at a temperature higher than the set temperature of the first heating process after the resin is heated for the specified time in the first heating process. 7. The bonding method according to item 6 of the patent application range, wherein the set temperature in the first heating process is lower than 190 ° C, and the set temperature in the second heating process is more than 190 ° C. 8. The joining method according to item 6 of the scope of patent application, wherein the specified time from the first heating process to the second heating process is less than 20 seconds. 9. The bonding method according to item 6 of the patent application scope, wherein after the second heating process, the resin is cooled from the glass transition point to a viscosity of the resin that can suppress the expansion of the gas in the resin and / or outgassing. 10. The bonding method according to item 6 of the scope of patent application, wherein in the process of mounting the above-mentioned installation -2- 1237335 member on a substrate and heating and curing the resin until the installation member is fixed to the substrate, the device is divided into A temporary crimping procedure for temporarily crimping a member to a substrate, and a formal crimping procedure for hardening the resin substantially completely and fixing the mounting member to the substrate. The above-mentioned temporary crimping procedure is set as the first heating process, and the above-mentioned formal crimping The program is set as the second heating process. 1 1. A bonding method, which is a method in which a resin is sandwiched between a mounting member and a substrate to mount the mounting member on a substrate, characterized in that it includes: a temporary crimping procedure, and a designation for coating the resin on the substrate When the installation member is installed at the place, the resin applied to the place is heated in advance to be softened, and the installation member is temporarily crimped; and the formal crimping procedure is to resin the joint portion of the installation member temporarily crimped. It is then heat-hardened to fix the mounting member on the substrate. 1 2. The bonding method according to item 11 of the scope of patent application, wherein the heating temperature of the resin in the above-mentioned temporary crimping procedure is set within a range of 60 ° C to 120 ° C. 1 3. The bonding method according to item 11 of the scope of patent application, wherein the heating of the resin in the above-mentioned temporary crimping process is performed from the back surface of the substrate. 14. The bonding method according to item 11 of the scope of patent application, wherein the heating of the resin in the above-mentioned temporary compression bonding process is to supply hot air to the resin from above the substrate. 15. The bonding method according to item 11 of the scope of patent application, wherein the temporary crimping procedure and the formal crimping procedure can be set continuously or separately. 1237335 1 6. A bonding method in which a resin is sandwiched between a mounting member and a substrate to mount the mounting member on the substrate, characterized in that the mounting member is mounted after the resin is coated on the above The ground speed at the designated place of the substrate is set to less than 10 mm / sec. 17. The bonding method according to item 1 of the patent application range, wherein the resin is a resin doped with conductive particles. 1 8. A bonding device for sandwiching a resin between a mounting member and a substrate to mount the mounting member on a substrate, comprising: a holding table for holding and holding the substrate; a pressure device , Pressurizing the installation member at the designated place of the substrate to be held; a heating device that heats the installation member in a pressurized state, and heat-hardens the resin; and a cooling device for cooling the pressurizing the installation member State heating means. 19. The bonding device according to item 18 of the scope of patent application, which includes a temperature control device, which controls the cooling temperature of the above cooling device so that the glass transition point of each resin used is below 20 ° C. 20. The bonding device according to item 18 of the scope of patent application, wherein the cooling device is a ventilation device provided with a through hole in the heating device as a gas flow path and blowing gas from the outside. 2 1. The bonding device according to item 18 of the scope of patent application, wherein the cooling device is provided by a first flow path provided inside the heating device, and a gas > 4- 1237335 is supplied to the first flow path. Composed of a gas supply device. 2 2. The joining device according to item 18 of the scope of the patent application, wherein the cooling device is a cooling member installed on the outer periphery of the heating device for heat dissipation. 2 3 · The joint device according to item 18 of the scope of patent application, wherein the cooling device is provided by a second flow path provided inside the heating device and a cooling water supply device that supplies cooling water to the second flow path. Make up. 24. The bonding device according to item 23 of the scope of patent application, wherein the second flow path is facing a heating member with a built-in heater mode. 25. The bonding device according to item 19 of the scope of patent application, wherein the holding table side has a heating device, and the temperature of the heating device is controlled so that the temperature of the substrate held on the holding table becomes every resin used. The glass transition point is below 20 ° C. 26. The bonding device according to item 25 of the scope of the patent application, which includes a temperature control device, which controls the cooling device and the heating device on the side of the holding table according to the temperature of the mounting member and the substrate to adjust the substrate or the mounting member. The temperature of either one or both the installation member and the substrate is such that when the resin is to be cooled down, the temperature of the resin is from the glass transition point to the expansion of the gas or degassing in the resin that can be extracted. The resin viscosity range is η, and the thermal expansion amount of the substrate and the mounting member at room temperature becomes the same. 2 7. A bonding device for inserting a resin between a mounting member and a glass to mount the mounting member on a substrate, comprising: a holding table for holding and holding the substrate; Set the device at the designated place coated with the resin 1237335 on the base bridge ^ A yo that has been placed and held, and position the mounting member to perform the device; and a speed control device to install the above device The grounding speed of the installation device when the component is placed on the substrate is adjusted to less than 10 mm / sec.
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WO2003094222A1 (en) 2003-11-13
CN100375256C (en) 2008-03-12
JP2004031885A (en) 2004-01-29
KR20050000499A (en) 2005-01-05
CN1650415A (en) 2005-08-03
KR100978697B1 (en) 2010-08-30
TW200401381A (en) 2004-01-16

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