TWI423359B - Semiconductor mounting device and semiconductor mounting method - Google Patents
Semiconductor mounting device and semiconductor mounting method Download PDFInfo
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- TWI423359B TWI423359B TW097141667A TW97141667A TWI423359B TW I423359 B TWI423359 B TW I423359B TW 097141667 A TW097141667 A TW 097141667A TW 97141667 A TW97141667 A TW 97141667A TW I423359 B TWI423359 B TW I423359B
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Description
本發明係關於將半導體晶片安裝於撓性基板之半導體安裝裝置及半導體安裝方法。The present invention relates to a semiconductor mounting device and a semiconductor mounting method for mounting a semiconductor wafer on a flexible substrate.
近年來，搭載/內建於各種電子機器之半導體裝置採用利用如TCP(Tape Carrier Package：捲帶式封裝)或COF(Chip on film：薄膜覆晶封裝)等之撓性(可撓性)基板之安裝技術，來謀求安裝之高密度化，且實現薄型化、輕量化。In recent years, flexible (flexible) substrates such as TCP (Tape Carrier Package) or COF (Chip on Film) have been used for semiconductor devices mounted/built in various electronic devices. The mounting technology is required to increase the density of the mounting, and to achieve a reduction in thickness and weight.
上述撓性基板係由聚醯亞胺等形成之捲帶基材及於其上形成之導體配線等構成。導體配線係用Cu等進行光蝕刻等而形成。於該導體配線之最表面亦有焊接有搭載構件等之情形。且，如為導體配線使用Cu之情形，為防止導體配線劣化，有時亦於導體配線之表面覆蓋Sn或Au等。又，在撓性基板之形成有導體配線之面上，基於保護該導體配線之目的，於與外部電路連接之部分以外的區域形成有抗焊劑。The flexible substrate is composed of a tape substrate formed of polyimide or the like, a conductor wire formed thereon, and the like. The conductor wiring is formed by photolithography or the like using Cu or the like. On the outermost surface of the conductor wiring, a mounting member or the like may be welded. In the case where Cu is used for the conductor wiring, in order to prevent deterioration of the conductor wiring, Sn or Au may be covered on the surface of the conductor wiring. Further, on the surface of the flexible substrate on which the conductor wiring is formed, a solder resist is formed in a region other than the portion to be connected to the external circuit for the purpose of protecting the conductor wiring.
另一方面，通常，撓性基板於安裝半導體晶片之TCP或COF之製作步驟中為長條狀。藉此，可連續依序將撓性基板送入各製作步驟所用之生產裝置，故可藉由流程化作業高效率進行模組之形成。且，由於撓性基板為捲帶狀，故可藉由捲繞於捲帶機而進行撓性基板之供給與回收。因此，長條狀之撓性基板有利於半導體裝置之大量生產。On the other hand, in general, the flexible substrate is elongated in the manufacturing step of mounting the semiconductor wafer with TCP or COF. Thereby, the flexible substrate can be sequentially fed to the production apparatus used in each production step, so that the formation of the module can be performed with high efficiency by the flow processing operation. Further, since the flexible substrate is in the form of a tape, the supply and recovery of the flexible substrate can be performed by winding on a tape winding machine. Therefore, the elongated flexible substrate is advantageous for mass production of a semiconductor device.
於如此之撓性基板上安裝半導體晶片時，使用圖3、4所示之半導體安裝裝置10。先前之半導體安裝裝置10，當撓性基板6依序送至加熱台2上時，使撓性基板6真空吸附於加熱台2，並藉由夾具30將撓性基板6壓住。其後，使保持於加熱工具4之半導體晶片5的凸塊5a與撓性基板6之半導體晶片搭載區域之電極部(內引線)位置對合而進行熱壓著。When a semiconductor wafer is mounted on such a flexible substrate, the semiconductor mounting device 10 shown in Figs. In the conventional semiconductor mounting apparatus 10, when the flexible substrate 6 is sequentially supplied onto the heating stage 2, the flexible substrate 6 is vacuum-adsorbed to the heating stage 2, and the flexible substrate 6 is pressed by the jig 30. Thereafter, the bumps 5a of the semiconductor wafer 5 held by the heating tool 4 are placed in contact with the electrode portions (inner leads) of the semiconductor wafer mounting region of the flexible substrate 6, and are thermally pressed.
如此先前之半導體安裝裝置，為良好進行半導體晶片與撓性基板之接著，故將半導體晶片安裝於撓性基板後，對捲帶面吹送冷卻用氣體進行急速冷卻(例如，參考專利文獻1)。In the semiconductor mounting device of the prior art, the semiconductor wafer and the flexible substrate are preferably adhered to each other. Therefore, after the semiconductor wafer is mounted on the flexible substrate, the cooling gas is blown onto the winding surface to be rapidly cooled (for example, refer to Patent Document 1).
[專利文獻1]日本公開專利公報「特開2004-71608號(2004年3月4日公開)」[Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-71608 (published on March 4, 2004)
先前之半導體安裝裝置，在撓性基板上安裝半導體晶片時，若連續安裝半導體晶片，會因加熱工具及加熱台之熱而使夾具的溫度上升。由於其夾具之溫度傳遞至撓性基板而使撓性基板之捲帶基材(例如聚醯亞胺)發生熱膨脹，導致撓性基板上之半導體晶片搭載區域之電極部(導體配線中與半導體晶片之凸塊接合之部分、連接點)由原先應在之位置偏離。且，若捲帶基材上之導體配線的圖案形狀不同，則捲帶基材之膨脹率之量亦不同。因此，製品當中會出現連接點偏離原先位置而配線者，無法半導體晶片之凸塊順利連接。該等「偏離」成為半導體裝置之可靠性低落的原因。In the conventional semiconductor mounting apparatus, when a semiconductor wafer is mounted on a flexible substrate, if the semiconductor wafer is continuously mounted, the temperature of the jig is increased by the heat of the heating tool and the heating stage. The coil substrate (for example, polyimide) of the flexible substrate is thermally expanded by the temperature of the jig being transmitted to the flexible substrate, thereby causing the electrode portion of the semiconductor wafer mounting region on the flexible substrate (the conductor wiring and the semiconductor wafer) The portion of the bump joint, the joint point) is deviated from the original position. Further, if the pattern shape of the conductor wiring on the tape substrate is different, the amount of expansion of the tape substrate is also different. Therefore, in the product, the connection point may be deviated from the original position, and the wiring may not be smoothly connected to the bump of the semiconductor wafer. These "deviations" are the cause of the low reliability of semiconductor devices.
另，專利文獻1中，為冷卻捲帶基材之導體配線與半導體晶片之電極的接合部而噴出氣體，但無冷卻接合前之捲帶的方法。Further, in Patent Document 1, a method of cooling a joint between a conductor wire of a tape substrate and an electrode of a semiconductor wafer, but not cooling the tape before joining.
本發明係鑒於上述問題所為，其目的在於提供一種消除此種撓性基板上之半導體晶片搭載區域之電極部的偏離，使撓性基板之半導體晶片搭載區域之電極部與半導體晶片之外部連接部確實地接合，而能夠製造出可靠性高的半導體裝置之半導體安裝裝置。The present invention has been made in view of the above problems, and it is an object of the invention to provide an electrode portion of a semiconductor wafer mounting region of a flexible substrate and an external connection portion of a semiconductor wafer, in order to eliminate a deviation of an electrode portion of a semiconductor wafer mounting region on the flexible substrate. The semiconductor mounting device of the highly reliable semiconductor device can be manufactured by being surely bonded.
為解決上述問題，本發明之半導體安裝裝置具備：加熱台，其係搭載捲帶基材上形成導體配線之撓性基板；及加熱工具，其係將保持之半導體晶片搭載於上述加熱台上之上述撓性基板；且，藉由上述加熱工具使上述半導體晶片之外部連接部與上述撓性基板上之半導體晶片搭載區域之電極部位置對合，而進行熱壓著；其特徵為：具備固定構件，其係使上述撓性基板固定於上述加熱台，且，於上述固定構件之內部設有氣體噴出機構，向撓性基板上之半導體晶片搭載區域噴出氣體。In order to solve the above problems, the semiconductor mounting device of the present invention includes: a heating stage that mounts a flexible substrate on which a conductor wiring is formed on a tape substrate; and a heating tool that mounts the held semiconductor wafer on the heating stage The flexible substrate is characterized in that the external connection portion of the semiconductor wafer and the electrode portion of the semiconductor wafer mounting region on the flexible substrate are brought into contact with each other by the heating tool, and are heat-pressed; The member is configured to fix the flexible substrate to the heating stage, and a gas discharge mechanism is provided inside the fixing member to eject gas to a semiconductor wafer mounting region on the flexible substrate.
根據上述構成，藉由設於固定構件之內部的氣體噴出機構，向撓性基板上之半導體晶片搭載區域噴出氣體。此處，藉由上述氣體噴出機構向半導體晶片搭載區域噴出溫度低於加熱台之氣體，可抑制撓性基板之捲帶基材之熱膨脹，防止撓性基板上之半導體晶片搭載區域之電極部因熱膨脹而由原先應在之位置偏離。另，該電極部包含上述導體配線之一部分。將半導體晶片之外部連接部接合於撓性基板之前，如上述方式藉由對半導體晶片搭載區域噴出氣體進行冷卻，其後，在接合半導體晶片之外部連接部與晶片搭載區域之電極部時，可確實地使晶片搭載區域之電極部與半導體晶片之外部連接部接合，而不發生接合位置之偏離。According to the above configuration, the gas is ejected to the semiconductor wafer mounting region on the flexible substrate by the gas ejecting mechanism provided inside the fixing member. Here, the gas ejecting means ejects a gas having a temperature lower than that of the heating stage into the semiconductor wafer mounting region, thereby suppressing thermal expansion of the tape substrate of the flexible substrate and preventing the electrode portion of the semiconductor wafer mounting region on the flexible substrate The thermal expansion is deviated from the original position. Further, the electrode portion includes one of the conductor wirings. Before the external connection portion of the semiconductor wafer is bonded to the flexible substrate, the gas is ejected from the semiconductor wafer mounting region as described above, and then, when the external connection portion of the semiconductor wafer and the electrode portion of the wafer mounting region are bonded, The electrode portion of the wafer mounting region is surely joined to the external connection portion of the semiconductor wafer without causing a deviation in the bonding position.
另一方面，當撓性基板上之半導體晶片搭載區域之電極部偏離原先應在之位置而配線時，藉由上述氣體噴出機構，向半導體晶片搭載區域噴出溫度高於加熱台之氣體，可使撓性基板之捲帶基材發生熱膨脹，從而使撓性基板上之半導體晶片搭載區域的電極部回到原先應在之位置。在將半導體晶片之外部連接部接合於撓性基板之前，如上述方式藉由對半導體晶片搭載區域噴出氣體進行加熱，其後，在接合半導體晶片之外部連接部與晶片搭載區域之電極部時，可確實地使晶片搭載區域之電極部與半導體晶片之外部連接部接合，而不發生接合位置之偏離。On the other hand, when the electrode portion of the semiconductor wafer mounting region on the flexible substrate is shifted from the original position, the gas ejecting mechanism can eject the gas having a temperature higher than the heating stage to the semiconductor wafer mounting region. The coil substrate of the flexible substrate is thermally expanded to return the electrode portion of the semiconductor wafer mounting region on the flexible substrate to the original position. Before the external connection portion of the semiconductor wafer is bonded to the flexible substrate, the gas is ejected from the semiconductor wafer mounting region as described above, and then, when the external connection portion of the semiconductor wafer and the electrode portion of the wafer mounting region are bonded, It is possible to surely bond the electrode portion of the wafer mounting region to the external connection portion of the semiconductor wafer without causing a deviation in the bonding position.
由上可得，根據上述構成，可確實地接合撓性基板之半導體晶片搭載區域之電極部與半導體晶片之外部連接端子，而不發生接合位置之偏離，可提供能夠製造可靠性高的半導體裝置之半導體安裝裝置。且，藉由氣體噴出亦可去除撓性基板上之異物。According to the above configuration, the electrode portion of the semiconductor wafer mounting region of the flexible substrate and the external connection terminal of the semiconductor wafer can be reliably bonded without causing deviation of the bonding position, and a highly reliable semiconductor device can be manufactured. Semiconductor mounting device. Moreover, the foreign matter on the flexible substrate can also be removed by gas ejection.
本發明之其他目的、特徵、及優點係如下所詳述。又，本發明之效益係如參考附圖之以下說明所述。Other objects, features, and advantages of the present invention are described in detail below. Further, the benefits of the present invention are as described below with reference to the accompanying drawings.
以下茲佐以圖1及2說明本發明之實施之一形態。另，本發明不限定於此。Hereinafter, an embodiment of the present invention will be described with reference to Figs. In addition, the invention is not limited to this.
(半導體安裝裝置之構成)(Construction of semiconductor mounting device)
圖1係本實施形態之半導體安裝裝置1之概略剖面圖，其顯示於撓性基板6上搭載半導體晶片5之前的狀態。如圖1所示，半導體安裝裝置1具備由下方賦與熱之加熱台2、及由上方賦與熱及壓力之加熱工具4。並具備使撓性基板6固定於加熱台2之夾具(固定構件)3。該夾具3設有氣體噴出口3a，向半導體晶片5搭載前之撓性基板6上之晶片搭載區域(半導體晶片搭載區域)噴出氣體，於後詳述。1 is a schematic cross-sectional view of the semiconductor mounting device 1 of the present embodiment, and shows a state before the semiconductor wafer 5 is mounted on the flexible substrate 6. As shown in FIG. 1, the semiconductor mounting apparatus 1 is provided with a heating stage 2 to which heat is applied from below, and a heating tool 4 to which heat and pressure are applied from above. Further, a jig (fixing member) 3 for fixing the flexible substrate 6 to the heating stage 2 is provided. The jig 3 is provided with a gas discharge port 3a, and the gas is ejected to the wafer mounting region (semiconductor wafer mounting region) on the flexible substrate 6 before the semiconductor wafer 5 is mounted, and will be described in detail later.
加熱台2之上面(壓接面)與加熱工具4之下面(壓接面)平行且彼此相對。The upper surface (crimping surface) of the heating stage 2 is parallel to the lower surface (crimping surface) of the heating tool 4 and opposed to each other.
加熱台2及加熱工具4係使半導體晶片5熱壓著於撓性基板6。藉由未圖示之移動機構，以使撓性基板6之晶片搭載區域位於加熱台2上之固定位置之方式配置撓性基板6。加熱台2由所配置之撓性基板6下方上升，使撓性基板6真空吸附。又，加熱工具4將真空吸附之半導體晶片5以其凸塊5a在下，對合位於真空吸附於加熱台2之撓性基板6之晶片搭載區域的正上方而配置。其後，使加熱工具4朝向加熱台2下降加壓壓著。本實施形態中為加熱台2上升且加熱工具4下降，然而亦可為另一者不移動之構成。The heating stage 2 and the heating tool 4 heat-press the semiconductor wafer 5 to the flexible substrate 6. The flexible substrate 6 is disposed such that the wafer mounting region of the flexible substrate 6 is positioned at a fixed position on the heating stage 2 by a moving mechanism (not shown). The heating stage 2 is raised below the disposed flexible substrate 6, and the flexible substrate 6 is vacuum-adsorbed. Moreover, the heating tool 4 arranges the vacuum-adsorbed semiconductor wafer 5 with the bumps 5a below, and is disposed directly above the wafer mounting region of the flexible substrate 6 that is vacuum-adsorbed to the heating stage 2. Thereafter, the heating tool 4 is lowered and pressed against the heating stage 2. In the present embodiment, the heating stage 2 is raised and the heating tool 4 is lowered, but the other may not be moved.
此處，加熱台2及加熱工具4分別作為加熱構件內建有加熱器(未圖示)，而能夠加熱撓性基板6及半導體晶片5。藉由該加熱，使半導體晶片5之凸塊(外部連接端子)5a與撓性基板6之晶片搭載區域之內引線(電極部)熱壓著。另，藉由控制加熱器，調整加熱台2及加熱工具4之表面溫度。本實施形態中，加熱台2控制於約100℃，加熱工具4約400℃，然而並非限定於該等數值。Here, the heating stage 2 and the heating tool 4 are each provided with a heater (not shown) as a heating member, and the flexible substrate 6 and the semiconductor wafer 5 can be heated. By this heating, the bumps (external connection terminals) 5a of the semiconductor wafer 5 and the inner leads (electrode portions) of the wafer mounting region of the flexible substrate 6 are heat-pressed. Further, the surface temperature of the heating stage 2 and the heating tool 4 is adjusted by controlling the heater. In the present embodiment, the heating stage 2 is controlled at about 100 ° C, and the heating tool 4 is about 400 ° C, but is not limited to these values.
加熱台2設有真空溝7，用以將撓性基板6固定於加熱台2。真空溝7由加熱台2之壓接面貫穿加熱台而設，且連接於壓縮機等(未圖示)。藉由該壓縮機等，抽吸真空溝7內之氣體，使真空溝7內部處於近似真空之狀態，而使撓性基板6真空吸附固定於加熱台2上。又，加熱工具4亦設有真空孔與上述相同，用以使半導體晶片5真空吸附固定於加熱工具。The heating stage 2 is provided with a vacuum groove 7 for fixing the flexible substrate 6 to the heating stage 2. The vacuum chamber 7 is provided by a pressure contact surface of the heating stage 2 through a heating stage, and is connected to a compressor or the like (not shown). The gas in the vacuum chamber 7 is sucked by the compressor or the like to bring the inside of the vacuum chamber 7 into a vacuum state, and the flexible substrate 6 is vacuum-adsorbed and fixed to the heating stage 2. Further, the heating tool 4 is also provided with a vacuum hole as described above for vacuum-adsorbing and fixing the semiconductor wafer 5 to the heating tool.
夾具3為將撓性基板6固定於加熱台2之構件。如同以下詳述，在撓性基板6之晶片搭載區域被配置於加熱台2上之前，該夾具3以未相接於加熱台2之狀態而配置於加熱台2上方，當晶片搭載區域被配置於加熱台2之固定位置時，其下降而將撓性基板6推壓固定於加熱台2。再者，夾具3藉由設於其內部之氣體噴出機構3b，向半導體晶片5安裝前之撓性基板6上之晶片搭載區域噴出氣體。The jig 3 is a member that fixes the flexible substrate 6 to the heating stage 2 . As described in detail below, before the wafer mounting region of the flexible substrate 6 is placed on the heating stage 2, the jig 3 is placed above the heating stage 2 without being in contact with the heating stage 2, and the wafer mounting area is arranged. At the fixed position of the heating stage 2, it descends and presses and fixes the flexible substrate 6 to the heating stage 2. Further, the jig 3 ejects gas to the wafer mounting region on the flexible substrate 6 before the semiconductor wafer 5 is mounted by the gas ejecting mechanism 3b provided therein.
夾具3之材料最好為不易蓄熱之材料，如不銹鋼、陶瓷等。或為即使蓄熱但易冷卻之材料，如鋁、鉬等。The material of the jig 3 is preferably a material that is not easy to store heat, such as stainless steel, ceramics, and the like. Or a material that is easily cooled even if it is stored in heat, such as aluminum, molybdenum, and the like.
夾具3之內部有空洞，使氣體可流動。作為氣體，除空氣以外亦可為N2 等氣體。該空洞連接有將氣體送入夾具3之空洞之送風機構，如壓縮機等。又，亦可設置使送入空洞之氣體的溫度變化之溫度轉換機構，如電熱線、熱泵等。There is a cavity inside the clamp 3 to allow the gas to flow. As the gas, a gas such as N 2 may be used in addition to air. The cavity is connected to a blower mechanism that feeds gas into the cavity of the jig 3, such as a compressor. Further, a temperature conversion mechanism that changes the temperature of the gas fed into the cavity, such as a heating wire or a heat pump, may be provided.
氣體噴出機構3b如圖2所示，其構成為，使氣體由夾具3之內部向半導體晶片5安裝前之撓性基板6上之晶片搭載區域噴出。因此，氣體噴出機構3b之氣體噴出口3a之噴出面的剖面形狀，尤其向晶片搭載區域全體吹送氣體之形狀，最好為如圓形、橢圓等。又，較好的是，由氣體噴出口3a噴出之氣體的壓力為如0.05~1.0MPa。本實施形態中，氣體噴出機構3b係由上述空洞與氣體噴出口3a構成。As shown in FIG. 2, the gas ejecting mechanism 3b is configured to eject the gas from the inside of the jig 3 to the wafer mounting region on the flexible substrate 6 before the semiconductor wafer 5 is mounted. Therefore, the cross-sectional shape of the discharge surface of the gas discharge port 3a of the gas discharge mechanism 3b, particularly the shape of the gas to be blown to the entire wafer mounting region, is preferably a circular shape or an elliptical shape. Further, it is preferable that the pressure of the gas ejected from the gas discharge port 3a is, for example, 0.05 to 1.0 MPa. In the present embodiment, the gas discharge mechanism 3b is constituted by the above-described cavity and the gas discharge port 3a.
在此說明撓性基板6之構成。撓性基板6係由捲帶基材(薄膜基材)、在該捲帶基材上以光蝕刻等形成之導體配線、及覆蓋導體配線圖案上之抗焊劑等構成。撓性基板6具有搭載半導體晶片5之晶片搭載區域，且上述導體配線之一部分為在晶片搭載區域中與半導體晶片5之凸塊5a接合之電極。Here, the configuration of the flexible substrate 6 will be described. The flexible substrate 6 is composed of a tape substrate (film substrate), a conductor wire formed by photolithography or the like on the tape substrate, and a solder resist covering the conductor wiring pattern. The flexible substrate 6 has a wafer mounting region on which the semiconductor wafer 5 is mounted, and one of the conductor wirings is an electrode bonded to the bump 5a of the semiconductor wafer 5 in the wafer mounting region.
捲帶基材具有絕緣性，只要是可於其表面形成導體配線者即可。具體而言，作為捲帶基材，使用聚醯亞胺或聚酯等絕緣膜。導體配線只要具有導電性即可，可適宜使用Cu等，藉由光蝕刻等形成作為配線圖案。為防止導體配線之劣化，亦有於導體配線之表面覆蓋Sn或Au等之情形。又，在形成有撓性基板6之導體配線之面上，基於保護該導體配線之目的，在半導體晶片搭載區域之電極之與外部電路的連接部分以外之區域，形成有抗焊劑。The tape substrate has insulation properties as long as it can form a conductor wire on the surface. Specifically, as the tape substrate, an insulating film such as polyimide or polyester is used. The conductor wiring may be formed of a wiring pattern by photolithography or the like as long as it has conductivity. In order to prevent deterioration of the conductor wiring, there is also a case where the surface of the conductor wiring is covered with Sn or Au. Further, on the surface on which the conductor wiring of the flexible substrate 6 is formed, a solder resist is formed in a region other than the portion where the electrode of the semiconductor wafer mounting region is connected to the external circuit for the purpose of protecting the conductor wiring.
又，撓性基板6為長條狀。即，於長條狀之捲帶基材上形成有複數之導體配線圖案，在安裝半導體晶片5而完成模組(半導體裝置)之階段，以各模組為單位將捲帶基材切斷。如圖2所示，於上述捲帶基材之兩側緣以特定之間隔形成有輸送孔6a，藉由使輸送用鏈輪(未圖示)嚙合於該輸送孔6a，而使撓性基板6於長度方向移動。因此，長條狀之撓性基板6依序送入加熱台2，而安裝半導體晶片5。Further, the flexible substrate 6 has an elongated shape. In other words, a plurality of conductor wiring patterns are formed on the elongated tape substrate, and the tape substrate is cut in units of modules at the stage of mounting the semiconductor wafer 5 to complete the module (semiconductor device). As shown in Fig. 2, a conveying hole 6a is formed at a predetermined interval on both side edges of the tape substrate, and a flexible substrate is formed by engaging a conveying sprocket (not shown) in the conveying hole 6a. 6 moves in the length direction. Therefore, the long flexible substrate 6 is sequentially fed into the heating stage 2 to mount the semiconductor wafer 5.
如此於撓性基板6連續安裝半導體晶片5時，會因加熱工具4及加熱台2之熱使夾具3之溫度上升。其夾具3之溫度會傳遞到捲帶，使捲帶基材發生熱膨脹。又，若捲帶基材上之導體配線之圖案形狀不同，則捲帶基材之膨脹率之量亦不同。因此，撓性基板6之製品當中，便出現連接點偏離原先之位置而配線者，使其與半導體晶片5之凸塊5a無法順利連接。When the semiconductor wafer 5 is continuously mounted on the flexible substrate 6, the temperature of the jig 3 rises due to the heat of the heating tool 4 and the heating stage 2. The temperature of the clamp 3 is transmitted to the tape to thermally expand the tape substrate. Further, if the pattern shape of the conductor wiring on the tape substrate is different, the amount of expansion of the tape substrate is also different. Therefore, among the products of the flexible substrate 6, the wiring is displaced from the original position, and the wiring is not smoothly connected to the bump 5a of the semiconductor wafer 5.
然而，本實施形態藉由使用設於夾具3內部之氣體噴出機構3b，向撓性基板之晶片搭載區域噴出氣體，可消除上述「偏離」。具體而言，藉由氣體噴出機構3b向晶片搭載區域噴出溫度低於加熱台之氣體，可抑制撓性基板之捲帶基材的熱膨脹，防止因撓性基板6上之晶片搭載區域之電極部發生熱膨脹而導致由原先應在之位置偏離。However, in the present embodiment, the gas is ejected to the wafer mounting region of the flexible substrate by using the gas ejecting mechanism 3b provided inside the jig 3, thereby eliminating the above-mentioned "deviation". Specifically, the gas ejecting mechanism 3b ejects a gas having a temperature lower than the heating stage to the wafer mounting region, thereby suppressing thermal expansion of the tape substrate of the flexible substrate and preventing the electrode portion of the wafer mounting region on the flexible substrate 6. Thermal expansion occurs that causes it to deviate from its original position.
另一方面，對於撓性基板6之晶片搭載區域之電極部由原先應在之位置偏離被配線之情形，若藉由氣體噴出機構3b向晶片搭載區域噴出溫度高於加熱台2之氣體，使撓性基板6之捲帶基材熱膨脹，可使撓性基板6上之晶片搭載區域之電極部回到原先應在之位置。On the other hand, when the electrode portion of the wafer mounting region of the flexible substrate 6 is shifted from the original position, the gas ejecting mechanism 3b ejects a gas having a temperature higher than that of the heating stage 2 to the wafer mounting region. The tape substrate of the flexible substrate 6 is thermally expanded, and the electrode portion of the wafer mounting region on the flexible substrate 6 can be returned to the original position.
此處，如圖2所示，較好的是，氣體噴出機構3b具有複數之噴出口。以氣浴式噴出而於氣體噴出機構3b上設置複數之噴出口，可向晶片搭載區域全體均勻噴射氣體。再者，如圖2所示，較好的是，夾具3此處設有2個，且分別設有氣體噴出機構3b。藉由所有的夾具均設置氣體噴出機構，可向晶片搭載區域全體均勻噴射氣體。Here, as shown in Fig. 2, it is preferable that the gas discharge mechanism 3b has a plurality of discharge ports. In the gas bath type, a plurality of discharge ports are provided in the gas discharge mechanism 3b, and the gas can be uniformly injected to the entire wafer mounting region. Further, as shown in Fig. 2, it is preferable that the jig 3 is provided with two, and the gas ejecting mechanism 3b is provided separately. By providing a gas discharge mechanism in all of the jigs, it is possible to uniformly inject gas into the entire wafer mounting region.
另，本實施形態中，藉由使夾具3接觸撓性基板6之壓力，而將撓性基板6固定於加熱台，然而亦可不使夾具3接觸撓性基板6，而藉由從夾具3噴出之氣體進行固定。該情形，由於無需如藉由夾具3之壓力將撓性基板固定於加熱台2時及解除固定時必須進行夾具3之移動，故不需要使夾具3移動之機構，而可降低該部分之成本。Further, in the present embodiment, the flexible substrate 6 is fixed to the heating stage by the pressure of the jig 3 contacting the flexible substrate 6, but the jig 3 may be ejected from the jig 3 without contacting the jig 3 with the flexible substrate 6. The gas is fixed. In this case, since it is not necessary to move the flexible substrate 2 to the heating stage 2 by the pressure of the jig 3 and the movement of the jig 3 is required when the fixing is released, the mechanism for moving the jig 3 is not required, and the cost of the portion can be reduced. .
又，藉由從夾具3噴出之氣體固定撓性基板6時，由氣體噴出口3a噴出之氣體之壓力雖然會因捲帶基材之硬度而不同，但較佳為，例如，與上述冷卻時或加熱時噴出之氣體之壓力相同程度之0.05~1.0MPa。但不限定於該數值。Further, when the flexible substrate 6 is fixed by the gas ejected from the jig 3, the pressure of the gas ejected from the gas ejection port 3a varies depending on the hardness of the tape substrate, but is preferably, for example, the above-described cooling. Or the pressure of the gas ejected during heating is 0.05~1.0 MPa to the same extent. However, it is not limited to this value.
(半導體晶片安裝方法)(Semiconductor wafer mounting method)
其次說明使用半導體安裝裝置1將半導體晶片安裝於撓性基板6之半導體安裝方法。此處，設定將加熱工具4之表面溫度控制為約400℃，加熱台2之表面溫度控制為約100℃。該等溫度僅為一例。Next, a semiconductor mounting method of mounting a semiconductor wafer on the flexible substrate 6 using the semiconductor mounting device 1 will be described. Here, it is set to control the surface temperature of the heating tool 4 to about 400 ° C, and the surface temperature of the heating stage 2 is controlled to about 100 ° C. These temperatures are only one example.
首先進行配置步驟。配置步驟係以使撓性基板6之晶片搭載區域位於加熱台2上之固定位置，且使半導體晶片對合於晶片搭載區域之正上方的狀態而配置。在進行該配置步驟期間進行氣體噴出步驟。First perform the configuration steps. The arrangement step is such that the wafer mounting region of the flexible substrate 6 is placed at a fixed position on the heating stage 2, and the semiconductor wafer is placed in a state directly above the wafer mounting region. A gas ejection step is performed during this configuration step.
具體地說明，首先，將撓性基板6之晶片搭載區域配置於加熱台2上之固定位置。此處，於撓性基板6之長度方向、換言之，撓性基板6之輸送方向之位置對合，係藉由用以輸送撓性基板6之未圖示之輸送用鏈輪齒進行，然而亦可用其它方法。撓性基板6以形成有導體配線之面位於加熱工具4側，即上側，且與加熱台2之壓接面平行之方式而配置於加熱台2上。Specifically, first, the wafer mounting region of the flexible substrate 6 is placed at a fixed position on the heating stage 2. Here, in the longitudinal direction of the flexible substrate 6, in other words, the positional alignment of the flexible substrate 6 in the transport direction is performed by the transport sprocket (not shown) for transporting the flexible substrate 6, but Other methods are available. The flexible substrate 6 is disposed on the heating stage 2 so that the surface on which the conductor wiring is formed is located on the heating tool 4 side, that is, on the upper side, and is parallel to the pressure contact surface of the heating stage 2.
其後，進行藉由氣體向晶片搭載區域噴出氣體之氣體噴出步驟。氣體噴出步驟藉由夾具3之氣體噴出機構3b，向晶片搭載區域噴出溫度低於加熱台2之氣體，此處為5~100℃之氣體。藉由如此氣體噴出進行冷卻，可抑制撓性基板6之捲帶基材的熱膨脹，防止因撓性基板6上之晶片搭載區域之電極部發生熱膨脹而導致由原先應在之位置偏離。Thereafter, a gas ejecting step of ejecting a gas into the wafer mounting region by the gas is performed. The gas ejecting step ejects a gas having a temperature lower than that of the heating stage 2 to the wafer mounting region by the gas ejecting mechanism 3b of the jig 3, here a gas of 5 to 100 °C. By cooling by the gas ejection, the thermal expansion of the tape substrate of the flexible substrate 6 can be suppressed, and the electrode portion of the wafer mounting region on the flexible substrate 6 can be prevented from being displaced from the original position due to thermal expansion.
其後，藉由使加熱台2上升而由下方支撐撓性基板6，並啟動連接於加熱台2之真空溝7的壓縮機，將撓性基板6真空吸附於加熱台2。再者，使夾具3由撓性基板6之上側下降，接觸撓性基板6進行按壓。使加熱台2接於撓性基板6進行輸送時，或使夾具3接於撓性基板6進行輸送時，係使用如機械臂等。Thereafter, the flexible substrate 2 is supported by raising the heating stage 2, and the compressor connected to the vacuum chamber 7 of the heating stage 2 is started, and the flexible substrate 6 is vacuum-adsorbed to the heating stage 2. Further, the jig 3 is lowered from the upper side of the flexible substrate 6, and is pressed against the flexible substrate 6. When the heating stage 2 is connected to the flexible substrate 6 for transportation, or when the jig 3 is attached to the flexible substrate 6, the robot arm or the like is used.
另一方面，半導體晶片5係以真空吸附於加熱工具4，並配置為與撓性基板之晶片搭載區域相對向，且使凸塊5a位於下側並位於撓性基板6之晶片搭載區域之正上方。將加熱工具4輸送於加熱台2上時係使用如機械臂等。另，藉由啟動連接加熱工具4之真空孔之壓縮機，將半導體晶片真空吸附於加熱工具4並固定。On the other hand, the semiconductor wafer 5 is vacuum-adsorbed to the heating tool 4, and is disposed to face the wafer mounting region of the flexible substrate, and the bump 5a is positioned on the lower side and is located in the wafer mounting region of the flexible substrate 6. Above. When the heating tool 4 is transported to the heating stage 2, a robot arm or the like is used. Further, the semiconductor wafer is vacuum-adsorbed to the heating tool 4 and fixed by activating a compressor that connects the vacuum holes of the heating tool 4.
在將半導體晶片5與撓性基板6進行熱壓著之熱壓著步驟之前，於上述氣體噴出步驟中，藉由向晶片搭載區域噴出氣體進行冷卻，可於其後之熱壓著步驟中，確實地接合撓性基板之晶片搭載區域之電極部與半導體晶片5之凸塊5a，而無接合位置之偏離。Before the step of hot pressing the semiconductor wafer 5 and the flexible substrate 6, the gas is ejected to the wafer mounting region for cooling in the gas ejecting step, and in the subsequent hot pressing step, The electrode portion of the wafer mounting region of the flexible substrate and the bump 5a of the semiconductor wafer 5 are surely bonded without the deviation of the bonding position.
其後說明熱壓著步驟。於上述氣體噴出步驟噴出氣體之狀態，即，將撓性基板6之晶片搭載區域冷卻之狀態，使加熱工具4下降。其後，藉由用加熱工具4及加熱台2，由上下夾住半導體晶片5與撓性基板6進行加壓及加熱。藉此，使半導體晶片5之凸塊5a與撓性基板6之晶片搭載區域之電極熱壓著。The hot pressing step will be described later. In a state in which the gas is ejected in the gas ejecting step, that is, the wafer mounting region of the flexible substrate 6 is cooled, the heating tool 4 is lowered. Thereafter, the semiconductor wafer 5 and the flexible substrate 6 are sandwiched between the upper and lower sides by the heating tool 4 and the heating stage 2 to perform pressurization and heating. Thereby, the bumps 5a of the semiconductor wafer 5 and the electrodes of the wafer mounting region of the flexible substrate 6 are thermally pressed.
在熱壓著步驟後，藉由解除加熱工具4內之真空孔之真空狀態，解除半導體晶片5之吸附，使加熱工具4上升，再解除賦與半導體晶片5與撓性基板6之壓力。且，亦使夾具3上升。再者，藉由解除真空溝7之真空狀態，亦解除撓性基板6與加熱台2之吸附狀態。其後，以使接下來應接著半導體晶片5之撓性基板6上之晶片搭載區域位於加熱台2上之固定位置，輸送撓性基板6。其後，與上述同樣，藉由半導體安裝裝置1進行下一個半導體晶片之安裝。另，由於將氣體朝向晶片搭載區域均勻噴出，故氣體噴出只要至少於加熱台2上升前至使加熱工具4上升時之間進行即可。亦可於更久之期間進行。又，亦可在夾具3上升中之狀態噴出氣體。After the hot pressing step, the vacuum state of the vacuum holes in the heating tool 4 is released, the adsorption of the semiconductor wafer 5 is released, the heating tool 4 is raised, and the pressure applied to the semiconductor wafer 5 and the flexible substrate 6 is released. Moreover, the jig 3 is also raised. Further, by releasing the vacuum state of the vacuum chamber 7, the adsorption state of the flexible substrate 6 and the heating stage 2 is also released. Thereafter, the flexible substrate 6 is transported so that the wafer mounting region on the flexible substrate 6 of the semiconductor wafer 5 is next placed at a fixed position on the heating stage 2. Thereafter, the mounting of the next semiconductor wafer is performed by the semiconductor mounting device 1 in the same manner as described above. Further, since the gas is uniformly discharged toward the wafer mounting region, the gas ejection may be performed at least between the rise of the heating stage 2 and the rise of the heating tool 4. It can also be carried out over a longer period of time. Further, the gas can be ejected while the jig 3 is rising.
又，若捲帶基材上之導體配線之圖案形狀不同，則捲帶基材之膨脹率之量亦不同。因此，製品當中會出現撓性基板上之晶片搭載區域之電極部偏離原先應在之位置而配線者。使用如此撓性基板之情形，於上述氣體噴出步驟中，可藉由夾具3之氣體噴出機構3b，向晶片搭載區域噴出溫度高於加熱台2之氣體，如100~200℃之氣體。如此藉由氣體進行加熱，可使撓性基板6之捲帶基材發生熱膨脹，使撓性基板6上之晶片搭載區域之電極部回到原先應在之位置。如此，在熱壓著步驟之前，於氣體噴出步驟向晶片搭載區域噴出氣體進行加熱，可於其後之熱壓著步驟中，確實地接合撓性基板之晶片搭載區域之電極部與半導體晶片5之凸塊5a，而無接合位置之偏離。Further, if the pattern shape of the conductor wiring on the tape substrate is different, the amount of expansion of the tape substrate is also different. Therefore, in the product, the electrode portion of the wafer mounting region on the flexible substrate may be displaced from the original position. In the case of using such a flexible substrate, in the gas ejecting step, a gas having a temperature higher than that of the heating stage 2, for example, 100 to 200 ° C, can be ejected to the wafer mounting region by the gas ejecting mechanism 3b of the jig 3. By heating by the gas, the web substrate of the flexible substrate 6 is thermally expanded, and the electrode portion of the wafer mounting region on the flexible substrate 6 is returned to the original position. In this manner, before the hot pressing step, the gas is ejected to the wafer mounting region in the gas ejecting step to be heated, and the electrode portion of the wafer mounting region of the flexible substrate and the semiconductor wafer 5 can be surely bonded in the subsequent thermal pressing step. The bump 5a is free of the deviation of the joint position.
如上，本發明之半導體安裝裝置，其具備：加熱台，其係搭載捲帶基材上形成導體配線之撓性基板；及加熱工具，其係將保持之半導體晶片搭載於上述加熱台上之上述撓性基板；且，藉由上述加熱工具使上述半導體晶片之外部連接部與上述撓性基板上之半導體晶片搭載區域之電極部位置對合，而進行熱壓著；其特徵為：具備固定構件，其係使上述撓性基板固定於上述加熱台，且，於上述固定構件之內部設有氣體噴出機構，向撓性基板上之半導體晶片搭載區域噴出氣體。As described above, the semiconductor mounting device of the present invention includes: a heating stage that mounts a flexible substrate on which a conductor wiring is formed on a tape substrate; and a heating tool that mounts the held semiconductor wafer on the heating stage a flexible substrate; and the external connection portion of the semiconductor wafer and the electrode portion of the semiconductor wafer mounting region on the flexible substrate are thermally pressed by the heating tool; and the fixing member is provided with a fixing member The flexible substrate is fixed to the heating stage, and a gas discharge mechanism is provided inside the fixing member to discharge gas to the semiconductor wafer mounting region on the flexible substrate.
此處，如為噴出氣體冷卻防止捲帶基材之熱膨脹之情形，例如，可使氣體噴出機構噴出5~100℃之氣體。氣體可為空氣以外之N2 等氣體。又，如為噴出氣體加熱使捲帶基材發生熱膨脹之情形，例如，可使氣體噴出機構噴出100~250℃之氣體。Here, in the case where the discharge gas is cooled to prevent thermal expansion of the tape substrate, for example, the gas discharge mechanism can eject a gas of 5 to 100 °C. The gas may be a gas such as N 2 other than air. Further, in the case where the tape substrate is thermally expanded by heating the gas to be ejected, for example, the gas ejecting means may eject a gas of 100 to 250 °C.
又，本發明之半導體安裝裝置，在上述構成基礎上，還可使上述固定構件藉由從上述氣體噴出機構所噴出氣體之氣壓，將上述撓性基板固定於上述加熱台。Further, in the semiconductor mounting device of the present invention, in addition to the above configuration, the fixing member may be configured to fix the flexible substrate to the heating stage by a gas pressure of a gas ejected from the gas ejecting mechanism.
根據上述構成，由於無需如藉由固定構件之壓力將撓性基板固定於加熱台時及解除固定時必須進行固定構件之移動，故不需要使固定構件移動之機構，而可降低該部分之成本。According to the above configuration, since it is not necessary to move the fixing member when the flexible substrate is fixed to the heating stage by the pressure of the fixing member, and the fixing member is required to be moved, the mechanism for moving the fixing member is not required, and the cost of the portion can be reduced. .
又，本發明之半導體安裝裝置，在上述構成基礎上，較好的是，上述氣體噴出機構更具有複數之噴出口。以氣浴式噴出而於氣體噴出機構上設置複數之噴出口，可向晶片搭載區域全體均勻噴射氣體，且在藉由氣體冷卻撓性基板之情形時，可有效防止熱膨脹。或者，在藉由氣體加熱撓性基板之情形時，可有效使其發生熱膨脹。Further, in the semiconductor mounting device of the present invention, in addition to the above configuration, preferably, the gas ejecting mechanism further includes a plurality of ejection ports. When a plurality of discharge ports are provided in the gas discharge mechanism by the air-bath type discharge, the gas can be uniformly injected to the entire wafer mounting region, and when the flexible substrate is cooled by the gas, thermal expansion can be effectively prevented. Alternatively, when the flexible substrate is heated by a gas, it is effective to cause thermal expansion.
又，本發明之半導體安裝裝置，在上述構成基礎上，較好的是，上述固定構件以複數設置，且於該複數之固定構件之每一者設有上述氣體噴出機構。藉由於所有的固定構件設置氣體噴出機構，可向晶片搭載區域全體均勻噴射氣體，且在藉由氣體冷卻撓性基板之情形時，可有效防止熱膨脹。或者，在藉由氣體加熱撓性基板之情形時，可有效使其發生熱膨脹。Further, in the semiconductor mounting device of the present invention, in addition to the above configuration, preferably, the fixing member is provided in plural, and each of the plurality of fixing members is provided with the gas ejecting mechanism. By providing the gas ejecting mechanism for all the fixing members, the gas can be uniformly injected to the entire wafer mounting region, and when the flexible substrate is cooled by the gas, thermal expansion can be effectively prevented. Alternatively, when the flexible substrate is heated by a gas, it is effective to cause thermal expansion.
又，本發明之半導體安裝裝置，在上述構成基礎上，可使上述氣體噴出機構噴出0.05~1.0MPa之氣體。Further, in the semiconductor mounting device of the present invention, in addition to the above configuration, the gas ejecting means can eject a gas of 0.05 to 1.0 MPa.
又，本發明之半導體安裝裝置，在上述構成基礎上，上述撓性基板為長條狀，且可具備使該撓性基板向長度方向移動之移動機構。Further, in the semiconductor mounting device of the present invention, in addition to the above configuration, the flexible substrate may be elongated, and may include a moving mechanism that moves the flexible substrate in the longitudinal direction.
本發明之半導體安裝方法，其係使半導體晶片之外部連接部位置對合於加熱台上之撓性基板之半導體晶片搭載區域的電極部且進行熱壓著，而將上述半導體晶片安裝於上述撓性基板，其特徵為包含以下步驟：在將上述半導體晶片搭載於上述撓性基板之半導體晶片搭載區域之前，向藉由上述加熱台予以加熱且形成有撓性基板之電極部的半導體晶片搭載區域噴出氣體。In the semiconductor mounting method of the present invention, the external connection portion of the semiconductor wafer is placed in contact with the electrode portion of the semiconductor wafer mounting region of the flexible substrate on the heating stage, and the semiconductor wafer is mounted on the scratch. The substrate includes a semiconductor wafer mounting region in which an electrode portion of the flexible substrate is heated by the heating stage before the semiconductor wafer is mounted on the semiconductor wafer mounting region of the flexible substrate. Spray gas.
根據上述方法，可獲得與上述半導體安裝裝置相同之效果，可確實地使撓性基板之半導體晶片搭載區域之電極部與半導體晶片之外部連接端子接合，製造可靠性高的半導體裝置。According to the above method, the same effect as the above-described semiconductor mounting device can be obtained, and the electrode portion of the semiconductor wafer mounting region of the flexible substrate can be reliably bonded to the external connection terminal of the semiconductor wafer, thereby manufacturing a highly reliable semiconductor device.
以上之發明之詳細說明中所述之具體之實施形態及實施例終究僅為說明本發明之技術內容，僅限定於如上之具體例進行狹義之解釋，在本發明之精神與後述之專利請求項之範圍內，可實施各種更改。又，即使在本說明書所示數值範圍以外，但只要是不違背本發明之主旨之合理的範圍，亦視其為包含於本發明之範圍內。The specific embodiments and examples described in the above detailed description of the invention are merely illustrative of the technical content of the present invention, and are only limited to the specific examples above, and are interpreted in a narrow sense, in the spirit of the present invention and the patent claims described later. Various changes can be implemented within the scope. Further, even if it is outside the scope of the numerical values shown in the present specification, it is intended to be included in the scope of the present invention as long as it does not deviate from the scope of the present invention.
本發明可利用於搭載/內建於電子機器等半導體裝置之製造。使用本發明製造之半導體裝置，由於其裝置之可靠性增高，故可廣泛應用於民生用電子製品乃至產業用電子製品、電子零件等。例如，可利用於行動用通信終端機、筆記型電腦、家電製品、醫療儀器、及遊戲機等。The present invention can be utilized in the manufacture of semiconductor devices mounted or built into electronic devices. The semiconductor device manufactured by the present invention can be widely used in electronic products for industrial use, industrial electronic products, electronic parts, and the like because of the increased reliability of the device. For example, it can be used for mobile communication terminals, notebook computers, home electric appliances, medical instruments, and game machines.
1．．．半導體安裝裝置1. . . Semiconductor mounting device
2．．．加熱台2. . . Heating station
3．．．夾具(固定構件)3. . . Fixture (fixed member)
3a．．．氣體噴出口3a. . . Gas outlet
3b．．．氣體噴出機構3b. . . Gas ejection mechanism
4．．．加熱工具4. . . Heating tool
5．．．半導體晶片5. . . Semiconductor wafer
5a．．．凸塊5a. . . Bump
6．．．撓性基板6. . . Flexible substrate
圖1係本實施之一形態之半導體安裝裝置之剖面圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a semiconductor mounting apparatus according to an embodiment of the present invention.
圖2係俯視圖1之半導體安裝裝置之加熱台及夾具時的平面圖。Fig. 2 is a plan view showing the heating stage and the jig of the semiconductor mounting device of Fig. 1;
圖3係先前之半導體安裝裝置之剖面圖。Figure 3 is a cross-sectional view of a prior semiconductor mounting device.
圖4係俯視先前之半導體安裝裝置之加熱台及夾具時的平面圖。Fig. 4 is a plan view showing a heating stage and a jig of a conventional semiconductor mounting device.
1．．．半導體安裝裝置1. . . Semiconductor mounting device
2．．．加熱台2. . . Heating station
3．．．夾具(固定構件)3. . . Fixture (fixed member)
3a．．．氣體噴出口3a. . . Gas outlet
3b．．．氣體噴出機構3b. . . Gas ejection mechanism
4．．．加熱工具4. . . Heating tool
5．．．半導體晶片5. . . Semiconductor wafer
5a．．．凸塊5a. . . Bump
6．．．撓性基板6. . . Flexible substrate
7．．．真空溝7. . . Vacuum trench
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| CN114887847B (en) * | 2022-05-31 | 2023-07-07 | 广东嘉拓自动化技术有限公司 | Pole piece suspension steering roller |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622304A (en) * | 1995-03-22 | 1997-04-22 | Kabushiki Kaisha Shinkawa | Tape bonding apparatus |
| JP2001274179A (en) * | 2000-03-28 | 2001-10-05 | Hitachi Ltd | Chip mounter and method of manufacturing semiconductor device |
| TW526166B (en) * | 2000-03-10 | 2003-04-01 | Toray Eng Co Ltd | Method and apparatus for mounting chip |
| TW200303589A (en) * | 2002-02-05 | 2003-09-01 | Toray Eng Co Ltd | Chip bonding method and apparatus |
| TWI237335B (en) * | 2002-04-30 | 2005-08-01 | Toray Eng Co Ltd | Bonding method and apparatus |
| JP2005235917A (en) * | 2004-02-18 | 2005-09-02 | Matsushita Electric Ind Co Ltd | Method and equipment for semiconductor packaging |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4196377B2 (en) * | 2003-09-09 | 2008-12-17 | ソニーケミカル＆インフォメーションデバイス株式会社 | Electronic component mounting method |
-
2007
- 2007-11-01 JP JP2007285350A patent/JP4340703B2/en not_active Expired - Fee Related
-
2008
- 2008-10-21 WO PCT/JP2008/069051 patent/WO2009057482A1/en active Application Filing
- 2008-10-21 KR KR1020107010895A patent/KR101134963B1/en not_active IP Right Cessation
- 2008-10-21 CN CN200880113932XA patent/CN101842888B/en not_active Expired - Fee Related
- 2008-10-29 TW TW097141667A patent/TWI423359B/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622304A (en) * | 1995-03-22 | 1997-04-22 | Kabushiki Kaisha Shinkawa | Tape bonding apparatus |
| TW526166B (en) * | 2000-03-10 | 2003-04-01 | Toray Eng Co Ltd | Method and apparatus for mounting chip |
| JP2001274179A (en) * | 2000-03-28 | 2001-10-05 | Hitachi Ltd | Chip mounter and method of manufacturing semiconductor device |
| TW200303589A (en) * | 2002-02-05 | 2003-09-01 | Toray Eng Co Ltd | Chip bonding method and apparatus |
| TWI237335B (en) * | 2002-04-30 | 2005-08-01 | Toray Eng Co Ltd | Bonding method and apparatus |
| JP2005235917A (en) * | 2004-02-18 | 2005-09-02 | Matsushita Electric Ind Co Ltd | Method and equipment for semiconductor packaging |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009117413A (en) | 2009-05-28 |
| CN101842888A (en) | 2010-09-22 |
| JP4340703B2 (en) | 2009-10-07 |
| TW200943445A (en) | 2009-10-16 |
| KR20100077202A (en) | 2010-07-07 |
| WO2009057482A1 (en) | 2009-05-07 |
| KR101134963B1 (en) | 2012-04-09 |
| CN101842888B (en) | 2012-04-18 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |