200421409 五、發明說明（1) 【發明所屬之技術領域】 * 本發明係關於-種奈米碳管場發射顯示裝置之製備方 法。 【先前技術】 奈米碳管係一種新型碳材料，由曰本研究人員njima 于 1991 年發現，請參見” Hencal mieFQtubules μ graphlt1C carbon' S I1Jlma， Nature， ν〇1·354， ρ56 (1 9 9 1)。奈米碳管具有極優異的導電性能，且其具有幾乎 接近理論極限之尖端表面積（尖端表面積愈小，其局部電 場愈集中），故，奈米碳管係已知最佳場發射材料。另， 奈米碳管具有極低的場發射電壓（小於1〇〇伏），可傳輸極 大的電流密度，且電流極穩定，因此，奈来碳管非常適合 製備場發射顯示器之發射元件。 如圖13所示，戴宏傑、範守善等人在美國專利第 6, 232, 70 6號揭示一種奈米碳管場發射裝置及其製備方 法，該裝置製備方法是在基底110表面形成多^ J12〇 .， 沈積催化劑層1 30，直接於催化劑層〗3〇上生長得到垂皇美 底110之奈米碳管束100作為場發射元件，其得到的奈二 管束1 0 0高度可達到3 0 0微米，奈米碳管束1 〇 〇頂部可能人 坦，或者係凹面形狀。該方法實現奈米碳管陣列生b 用於場發射顯示器。 \ t 如美國專利第6，5 1 5，4 1 5號所揭露，奈米碳管應用於 場發射顯示一般包括以下步驟：在陰極表面沈積金屬、 劑，形成絕緣層；在陰極表面生長奈米碳管陣列作為電子200421409 V. Description of the invention (1) [Technical field to which the invention belongs] * The present invention relates to a method for preparing a nano carbon tube field emission display device. [Prior technology] Nano carbon tube is a new type of carbon material. It was discovered by Japanese researcher njima in 1991. 1). Nano carbon tubes have excellent electrical conductivity, and they have a tip surface area that is close to the theoretical limit (the smaller the tip surface area, the more concentrated the local electric field). Therefore, nano carbon tubes are known to have the best field emission. In addition, carbon nanotubes have a very low field emission voltage (less than 100 volts), can transmit a large current density, and the current is extremely stable. Therefore, carbon nanotubes are very suitable for preparing the emission elements of field emission displays. As shown in FIG. 13, Dai Hongjie, Fan Shoushan, et al. Disclosed a nano-carbon tube field emission device and a preparation method thereof in US Patent No. 6,232, 70 6. The preparation method of the device is to form a plurality of carbon nanotubes on the surface of the substrate 110. ^ J12〇., Depositing a catalyst layer 130, and growing directly on the catalyst layer 30 to obtain a nano carbon tube bundle 100 with a vertical bottom of 110 as a field emission element, and the resulting nano tube bundle 100 height At 300 micrometers, the top of the carbon nanotube bundle 100 may be human-shaped, or it may be concave. This method realizes the use of nano-carbon tube arrays for field emission displays. \ As in US Patent No. 6, 5 1 5 As disclosed in No. 4, 15, the application of nanometer carbon tubes to field emission display generally includes the following steps: depositing a metal and an agent on the surface of the cathode to form an insulating layer; and growing an array of nanometer carbon tubes as electrons on the surface of the cathode
I 第6頁 五、發明說明（2) _____ _ 發射元件’·在絕緣層上 陽極與陰極真空封裝步成挪極，最後將含有熒光物， 制奈米碳管尖端發$ ^成平聲顯示器，通過控制柵極Λ 惟，上述方法生成:太 分奈米碳管較長，另—a π、米碳管高度不完全一致，肩 尖端不在同一平面，在=刀钱短，造成不同奈米碳管潑 均之缺點，且，傳統方t射電子時，容易產生電子發劑 調，但很難精確控制，所生成的奈米碳管高度雖然大磨 間的間距也因此難以控制以’奈米碳管發射尖端與栅極 故，提fe —種製備山 且可控制發射尖端盥柵極二，管發射尖端位於同一平面 方法實為必要。 兒極之間距的場發射顯示裝置 【内容】 本I明之目的在於提 且可控制發射尖端與栅極電：=射尖端位於同-平面 置之製備方法。 包極之間距的奈米碳管場發射 本發明提供一種奈来〜 法，包括下列步驟：提供發射顯示裝置之製備方 述工作板的表面形成一定作？，其具有-表面；在 平整表面；在絕緣：之絶緣層，該絕緣層具 面選定區域形成具；化劑層；在催化劑Ϊ 區域；在顯示點陣區域生成二並；成顯示點 之底板，以支撐所述陰極ΐ枉f “極和阻隔壁外形相 4 u位兒極和阻隔壁；翻轉並脫去二 之 控 部 射 不 可 之 之 裝 所 表 陣 陣 應 作 200421409 五、發明說明（3) 板，露出絕 去除絕緣層 裝陽極。 與先前 射端在同一 與柵極之間 【實施方式 請參見 製備方法流 步驟1， 後續步驟之 度，可選用 步驟2， 述工作板之 緣層之厚度 有一平整表 述絕緣層可 素孔時保護 步驟3， 化學沈積的 層，一般為 1 0 n m，優選 4 0 〇 °C溫度7 步驟4， ;於絕緣層表面選定區域形成柵. 對應顯示點陣之區域，露出奈米碳管陣；極封 技術相較，本發明具有如下優點··卉山 平面，從而實現電子均勻發射；且:管發 距可以控制，從而降低發射電壓。不米碳管 第一圖，為本發明奈米碳管場發射顯示 程圖。本發明方法包括下列步驟： 衣置之 提供工作板。此工作k具有一表面，复 支撐基礎，應當可以耐受丰平#其a /、炸為 对熱的非金屬材料。…長時之溫 在工作板表面形成一絕緣層。本步驟係 表面形成一定厚度之絕緣層，可以通斤 控制奈米碳管與柵極之間的距離 ；：= 面’以利於奈米碳管從同-平面開始生ΐ層； 以包括一層保護層，以#右你線 長，所 奈米竣管陣列。 便在後續步驟10形成像 方法在、，，巴緣層表面形成具有一定厚产每 過渡金屬以、(：〇、以或其合金，沈“度广 為3〜5·。優選地，可以將催化' :退火，以利於催化劑奈米顆粒之形成 在催化劑層表面形成阻隔壁並形成顯示點陣 200421409 五、發明說明（4) 區域。在催 壁，其用來 成顯示點陣 可視奈米碳 間，優選1 0 米碳管生長 覆絕緣層之 步驟5 ^ 反應溫度， 應，使得在 管陣列之溫 7 0 0 °C左右； 即可。 步驟6， 極 般以 根據 電極 層。 步驟7 ： 形狀之底板 材料，可選 步驟8 ^ 體翻轉後， 絕緣層。 步驟9 : 化劑層表面選定區域形 —^ ， 絕緣陰極電極和栅極u: ^度之阻隔 區域’以供生長奈米m時阻隔壁之間形 管所需長戶：—/…、灭&所而，阻隔壁之高声 微米〜5 0 0微f疋 f為1微米〜1 0 0 0微米之又 之溫度 氣化石夕、陶究或雲母等。 皇 生長示未碳管陣列。通入 通過催化劑之猎钋从m ^ ^ 加熱至 顯示點陣區;m ’碳氫氣體發生化學反 产視炉奇々2成不米碳官陣列；生長奈米石^ '乎人/:，成分、催化劑材料而定，一般在 不反s陣列之長度和阻隔壁高度大致相同 •^开1>成^陰極。在奈米碳管陣列頂部形成陰極電 或化學沈積的方法沈積金屬材料形成陰極 而要陰極電極還可以1包括一層電阻負反饋 开'成底板’即形成與陰極電極和阻隔壁相應 j t撐所述陰極電極和阻隔壁，底板為絕緣 用玻螭、塑膠、陶瓷等。 、番並脫去工作板。將上述步驟卜7形成之整 、1^底板作為支撐基礎，脫去工作板，露出 ^成麵極。在絕緣層表面選定區域形成柵極I Page 6 V. Description of the invention (2) _____ _ Emission element '· The anode and cathode are vacuum-sealed on the insulating layer to form a pole, and finally the fluorescent material is made and the tip of the carbon nanotube is made into a plain display. By controlling the grid Λ, the above method generates that the carbon nanotubes are too long, and the height of the carbon nanotubes is not exactly the same. The shoulder tips are not in the same plane, and the thickness of the carbon nanotubes is short, resulting in different carbon nanotubes. Disadvantages of tube splashing, and the traditional square t-emitting electrons, it is easy to generate electronic hair adjustment, but it is difficult to accurately control the height of the generated carbon nanotubes, although the distance between the large mills is also difficult to control. Carbon tube emission tip and grid Therefore, it is necessary to provide a method to prepare the mountain and control the emission tip. The tube emission tip is located on the same plane. Field emission display device with inter-electrode distance [Content] The purpose of this document is to provide a method for preparing and controlling the emission tip and the gate electrode: = the emission tip is located in the same plane. The field emission of nano-carbon tubes with a gap between the poles The present invention provides a nano-method, which includes the following steps: a method for preparing a surface of a working plate for preparing a display device for providing an emission display device? , Which has a-surface; on a flat surface; on an insulation: an insulating layer formed with a selected area of the insulating layer; a chemical agent layer; a region of a catalyst; a binarization in a display dot matrix area; a base plate for display dots In order to support the cathode "f" and the shape of the barrier wall, the position of the pole and the barrier wall is 4 u; flipping and taking off the installation of the second control unit, the array array should be 200421409 V. Description of the invention ( 3) The plate is exposed to remove the insulating layer and install the anode. It is the same as the previous emitter and is between the gate and the grid. [For an implementation, see step 1 of the manufacturing method flow. For the subsequent steps, step 2 can be used. The thickness has a flat expression that the insulating layer can be protected when step 3, the chemically deposited layer is generally 10 nm, preferably 4 0 ° C temperature 7 step 4, forming a grid on a selected area of the surface of the insulating layer. Corresponding display point The area of the array exposes the nano-carbon tube array. Compared with the extreme sealing technology, the present invention has the following advantages: · Huishan plane, so as to achieve uniform emission of electrons; and: the tube firing distance can be controlled, thereby reducing the Voltage. The first picture of the carbon nanotube is the field emission display map of the nano carbon tube of the present invention. The method of the present invention includes the following steps: A work plate is provided by the garment. This work has a surface and a complex support base, which should be able to耐 丰 平 # Its a /, non-metallic materials fried to heat. ... long-term temperature to form an insulating layer on the surface of the work board. This step is to form a certain thickness of insulating layer on the surface, you can control nano carbon The distance between the tube and the grid;: = face 'to help the nano carbon tube to generate a layer from the same plane; to include a protective layer, with #Right you line length, the nano tube array is completed. The subsequent step 10 method of forming an image is formed on the surface of the rim layer with a certain thickness. Each transition metal has a thickness of (0, 0, or an alloy thereof, and the degree of Shen is widely 3 to 5. ·. Preferably, the catalyst can be catalyzed. : Annealing to facilitate the formation of catalyst nano particles. Form barrier walls on the surface of the catalyst layer and form display lattices. 200421409 V. Description of the invention (4) area. In the catalyst wall, it is used to form the display lattice visible nano-carbon spaces. 10m carbon tube growth cover is preferred Step 5 of the insulation layer should be at a reaction temperature of about 700 ° C at the temperature of the tube array. Step 6. The electrode layer is most suitable. Step 7: The shape of the bottom plate is optional. Step 8 is optional. After the body is turned over, the insulation layer is formed. Step 9: Select the area shape on the surface of the chemical agent layer-^, the insulating cathode electrode and the grid u: ^ degree of blocking area 'to grow the required length of the tube between the barrier walls when growing nanometers Households: — /…, annihilation & so, the high-pitched micron of the barrier wall ~ 500 micron f 疋 f is 1 micron ~ 100 micron and the temperature of gasification stone Xi, Tao Ji or mica, etc. Growth shows no carbon tube array. Passed through the catalyst, the hunting falcons were heated from m ^ ^ to the display lattice area; m 'hydrocarbon gas was chemically reversed, and the furnace kiln was turned into a carbon array of 2 meters; growing nanostones ^' Human / :, composition Depending on the catalyst material, the length of the s-array and the height of the barrier wall are generally the same. The method of forming a cathode electrode or chemical deposition on the top of a carbon nanotube array is to deposit a metal material to form a cathode and the cathode electrode may further include a layer of resistance negative feedback to form a bottom plate, that is, corresponding to the cathode electrode and the barrier wall. The cathode electrode and the barrier wall, and the bottom plate are made of insulating glass, plastic, ceramic, etc. , Fan and take off the work board. Using the entire bottom plate formed in the above step 7 as a supporting base, remove the working plate to expose the surface electrode. Form a gate on a selected area of the surface of the insulation layer
200421409 五、發明說明（5) 所述選定區域應避開奈米碳管陣列顯示點陣之相旄 步驟1 0，形成像素孔。去除絕緣層相應之區域，霖 奈米碳管，使奈米碳管尖端發射之電子可以通過，從^ = 成像素孔；去除方法包括濕法刻蝕、幹法刻餘等。 ％ 步驟11是封裝陽極，形成平面顯示器，其 包括熒光層。丁两々衣务 請參見第二圖至第十二圖’下面將以第一 說明本發明之各個步驟。 彳十細 如第二圖所不，提供帶有細微凹槽（圖未標示） 板20，以作為步驟i所需之工作板，所設細微凹 * 後續步驟順利脫去模板20，為使表面平整，可用石¥ ^ 易去除之物質塗平，該模板20作為後續步驟之支撐基〜礎么 如，三圖所示，在模板2〇表面通過鍍膜、印接 :用現成的模板形成表面平整的氧化矽層2 趣 ίΐ面平整度要求小於1 ^，厚度為1微米至！_微Γ 卜10微未〜2 0 0微米，該氧化矽層 夠财受奈米碳管生長所需溫度（約 乳石夕層22可以通過濕法鍅刻去除。 ^ 如弟四圖所示，丨隹_ 土 保護層24，盆沈产方本一 乂在氧化石夕層22表面沈積形成矽 兮# Ϊ 可採用電子束蒸發或磁控藏射法， ，。奈米，氧化石夕ΐ2=情況下儘量薄’ -般為10奈米 斤迷矽保護層24起到保護後續步驟形 五、發明說明（6) 五、發明說明（6) 成 法 發 選 度 阻 隔 述 證 碳 間 米 覆 、、w /UTL ‘ 碳. 管I 右 可 的奈米.碳管陣列3〇之作 · 蝕刻去除。 用 了耐欠濕法蝕刻，但可用幹 如第五圖所示，在罐 般是Fe、Co、Nl5n人I5又層24表面沈積催化劑層26， 、熱蒸發或者濺射、去口 ：’尤積方法可採用電子束蒸 為㈣。優選地了。催化劑層26厚度為奈米，優 下進行退火，將催化劑層26在30()t〜40 0 〇C溫 Γϋ戶以利於催化劑奈米顆粒之形成。 隔壁28?=二催化劑層26上形成具有-定高度之 壁之間形成冊極電極4〇,同時在阻 氧化石夕層22之表面平ί t 碳管陣列3°，因為所 奈米碳管陣列30生長；同U層24厚度很薄’故可保 管陣列30之县声士 Ϊ f 千面；阻隔壁之高度與奈米 ，優選10料:Ια相同，一般為1微米〜1 0 0 0微米之 心；微米；@隔壁之材料應當能夠耐受奈 -緣層ΐ:屬:石:r:;c'右），如高溫玻璃、塗 受：ΓΐΓ”係通過化學氣相沈積法生成，在-定 “體發ΐ::::體使”催化劑層26之催化作用， ;奈米#总t不 陣列30之溫度一般在700 °c左 。、“陣列30之長度和阻隔壁28高度大致相同即 女弟七圖所示，在奈米碳管陣列3〇頂部沈積形成電阻 200421409 五、發明說明（7) 負反饋層32，其材料可選用合· 可根據電阻需要而本定，兮兒阻之矽合金專，厚度 的柵極電壓決^。„阻^ =小由電路設計及使用時 熱蒸發或濺射法沈積。哕f貝曰32可才木用電子束蒸發、 如篆λ㈤ 積 電阻負反饋層32係可選擇的。 弟八圖所示，在電阻負反 、 電極34，一般以苯鍍或化學沈面沈積形成陰極 成，全屬姑％ι _：、 予/尤積的方法沈積金屬材料形 如第大二係數應與電阻負反饋層32匹配。 戈弟九圖所示，形成盥降 適應之底板36，以* , = ㈣和阻隔壁28外形相 36 Λ ^ # 4d. I述陰極電極34與阻隔壁28，底板 b马、·巴緣材枓’可以選用 刷、㈣、融合等方法製作之。土♦陶瓦寺，可採用印 士第十圖所示’將第九圖 底板36作為支標基礎，⑽去模板二之；：翻：後’以所述 後，在氧化矽® 99主二α 、板路出乳化石夕層22，然 採用電子束;二〗“ :或形成柵極電極40。沈積可 光刻工藝使柵極沈積： = = ，除顯示點陣區域之氧化矽層22、 又保屢層24，必要時去除催化 y增“ =奈米碳管陣列3〇，使奈米碳管；心 從而形成像素孔；氧化石夕層22可用以通 矽保護層24可以耐受濕 ；、j :去除’而 破環，去除氡化石夕層22之後，可陣列3〇不被 24，必要時用録射轟擊去除催化劑層；6:去除石夕保護層 200421409200421409 V. Description of the invention (5) The selected area should avoid the display of the dot matrix of the carbon nanotube array. Step 10: Form a pixel hole. The corresponding area of the insulating layer is removed, and the nano carbon tube is made so that the electrons emitted from the tip of the nano carbon tube can pass through to form a pixel hole; the removal methods include wet etching, dry etching, and the like. % Step 11 is to package the anode to form a flat display including a fluorescent layer. Ding Liangyi's Clothing Please refer to the second to twelfth drawings', each step of the present invention will be described first. (10) As detailed in the second figure, provide the plate 20 with fine grooves (not shown) as the working plate required in step i. The fine grooves are provided. * The template 20 is smoothly removed in the subsequent steps. It can be flattened with a material that is easy to remove. The template 20 is used as a supporting base for the subsequent steps. As shown in the three pictures, the surface of the template 20 is coated and printed: the surface is smoothed with a ready-made template. The flatness of the silicon oxide layer 2 is less than 1 ^, and the thickness is 1 micrometer to! _ Micro Γ 10 micrometers to 200 micrometers, the silicon oxide layer is sufficient for the temperature required for the growth of carbon nanotubes (about lactite layer 22 can be removed by wet engraving. ^ As shown in Figure 4) ， 丨 __ Soil protection layer 24, the basin sinker Fang Benyi deposited on the surface of the oxidized stone layer 22 to form silicon. # Ϊ E-beam evaporation or magnetron tracing method can be used, nanometer, oxidized stone 2 = Case is as thin as possible '-generally 10 nanometers of silicon protective layer 24 to protect the subsequent steps. V. Description of the invention (6) V. Description of the invention (6) The method of selecting and blocking the carbon cover ， W / UTL 'Carbon. Tube I Right nano. Carbon tube array 30. Etching removal. Wet-resistant wet etching is used, but it can be dried as shown in the fifth figure, and it is Fe in a tank. The catalyst layer 26 is deposited on the surface of layer 24, Co, Nl5n, I5, and thermal evaporation or sputtering, and the mouth is removed: 'You can use electron beam evaporation for ㈣. It is preferred. The thickness of catalyst layer 26 is nanometer, excellent Annealing is carried out at the next temperature, and the catalyst layer 26 is maintained at a temperature of 30 ° C to 40 ° C to facilitate the formation of catalyst nano particles. Partition wall 28? = Two electrode layers 40 are formed on the two catalyst layers 26 with walls of a fixed height, and at the same time, the surface of the oxide-resistance stone layer 22 is flattened with a carbon tube array 3 °, because the carbon nanotube array 30 grows The thickness of the U layer 24 is very thin, so it can store the sound of the prefecture of the array 30. The height of the barrier wall is the same as that of the nanometer, preferably 10 materials: 1α, generally 1 micron to 100 micron. ; Millimeter; @Next wall material should be able to withstand the Nai-marginal layer (general: stone: r :; c 'right), such as high temperature glass, coating: ΓΐΓ "is generated by chemical vapor deposition, The catalytic effect of the catalyst layer 26 in the "body hairpin :::: 体 使"; the temperature of the nanometer #total array 30 is generally around 700 ° c. The length of the "array 30 and the height of the barrier wall 28 is approximately the same, that is Figure 7 shows the figure of a young girl, a resistor 200421409 is deposited on the top of the carbon nanotube array 30. V. Description of the invention (7) Negative feedback layer 32, the material of which can be selected according to the needs of the resistor. Silicon alloy specifically, the thickness of the gate voltage depends. „Resistance ^ = small deposited by circuit design and thermal evaporation or sputtering during use. 哕 f bayou 32 can be used to evaporate with electron beam, such as 篆 λ㈤ product resistance negative feedback layer 32 is optional. As shown in the negative electrode, the electrode 34 is generally formed by benzene plating or chemical deposition on the cathode to form a cathode, which is a method of depositing metallic materials. The second largest coefficient should be negative resistance. The feedback layer 32 is matched. As shown in the figure of Gedi Nine, a bottom plate 36 is formed, and the shape of the barrier wall 28 is *, = ㈣ and 36. Λ ^ # 4d. I. The cathode electrode 34 and the barrier wall 28, and the bottom plate b You can use the methods of brushing, ㈣, fusion, etc. to make the ba ba wood 枓. For the earthen pottery temple, you can use the tenth figure of the seal, as shown in the tenth figure of the seal. :; Turn over: After the above, the emulsified stone layer 22 is formed on the silicon oxide® 99 main two α, the plate circuit, and then an electron beam is used; two: “or the gate electrode 40 is formed. The deposition can be performed by photolithography to deposit the gate: = =, except for the silicon oxide layer 22 and the repeated layer 24 in the display lattice area, if necessary, the catalyst y is increased. Tube; the core thus forms a pixel hole; the oxidized stone layer 22 can be used to pass through the silicon protective layer 24 to withstand humidity; and j: remove the ring and remove the fossil stone layer 22, the array 30 can not be 24, If necessary, remove the catalyst layer by recording bombardment; 6: remove the Shixi protective layer 200421409
在該絕緣基底表面形成一催化劑層，可禾】 ^ 方法形成Fe、Co、Ni等過渡金屬或i人今，用化學沈積 屏： ％成催化劑 在催化劑層表面選定區域形成一阻p辟 "土，並形成顯示 五、發明說明（9) 點陣區域，該阻隔辟之一产 、 ' 優選10微米〜5 0 0微2敬米〜1 0 0 0微米之間， 管生長之溫度（一般70 0。 之材料應當能夠耐受奈米碳 緣層之金屬、矽、^作 c左右）’如高溫玻璃、塗覆絕 在顯示點陣區；：：太陶，雲母等； 積法生成奈米碳管陳^ =米兔管陣列，利用化學氣相沈 可’· 其高度與㈣壁高度大致相同即 在奈米碳管陣列頂部 . 學沈積法沈積金屬材料(A陰極電極，一般以蒸鍍或化 I形成盥+ k 成陰極電極； 办成/、C柽电極及阻隔壁 為絕緣材料，可選用破 v相應之底板，該底板可 接、融合等方法製作之；土膠、陶莞等，採用印刷、粘 在絕緣基底表面選 去除絕緣基底對庫g Γ >成柵極電極； 列； 應顯不點陣之區域，露出奈米碳管陣 最後，封裝陽極，形成場發射顯 知上所述，本發明確已符合明2 。 提出專利申請。惟，以卜张、+、土I月專利之要件，遂依法 例，自不能以此限制明之較佳實施 技藝之人士援依本發明之精神所J之箄1。舉凡熟悉本案 應涵蓋於以下申請專利範圍内。 荨效修飾或變化，皆 第14頁 200421409 圖式簡單說明 · 第一圖係本發明奈米碳管場發射顯示裝置之製備方法 流程圖。 第二圖至第十二圖係本發明具體實施例各步驟示意 圖。 第十三圖係先前技術奈米碳管場發射裝置示意圖。 【主要元件符號說明】A catalyst layer is formed on the surface of the insulating substrate. The method can be used to form transition metals such as Fe, Co, Ni, etc., and a chemical deposition screen is used to form a barrier layer on a selected area of the catalyst layer surface. (9) Dot matrix area, which is one of the barriers, '10 micron ~ 500 micron 2 Jing m ~ 100 000 micron, the temperature of tube growth (generally 70 0. The material should be able to withstand the metal, silicon, carbon, etc. of the nano carbon edge layer, such as high-temperature glass, coated in the display lattice area; :: ceramics, mica, etc .; Rice carbon tube Chen ^ = rice rabbit tube array, the use of chemical vapor deposition can be '· its height is approximately the same as the height of the wall, that is, on the top of the nano carbon tube array. Metal deposition method (A cathode electrode, generally by steam Plating or chemically forming I + K to form the cathode electrode; The /, C 柽 electrode and the barrier wall are insulating materials, and the corresponding bottom plate can be used. The bottom plate can be made by connecting, fusing, and other methods; clay, ceramic Wan, etc., using printing, sticking to the surface of the insulating substrate The substrate pair library g Γ > becomes the gate electrode; column; the area where the dot matrix should be displayed, and the nano carbon tube array is exposed. Finally, the anode is packaged to form a field emission. Filed a patent application. However, according to the elements of the Zhang, +, and Tu patents, according to the law, those who can not use this to limit the implementation of the preferred techniques can rely on the spirit of the present invention. It should be covered by the following application patents. Net effect modification or change, all on page 14 200421409 Brief description of the diagrams · The first diagram is a flowchart of the method for preparing the nano carbon tube field emission display device of the present invention. The twelfth figure is a schematic diagram of each step of the specific embodiment of the present invention. The thirteenth figure is a schematic diagram of the prior art nano carbon tube field emission device. [Description of the main component symbols]
模板 20 氧化矽層 22 矽保護層 24 催化劑層 26 阻隔壁 28 奈米碳管陣列 30 電阻負反饋層 32 1 陰極電極 34 底板 36 樹極電極 40 陽極 50 熒光層 52Template 20 Silicon oxide layer 22 Silicon protective layer 24 Catalyst layer 26 Barrier wall 28 Nano carbon tube array 30 Resistive negative feedback layer 32 1 Cathode electrode 34 Base plate 36 Tree electrode 40 Anode 50 Fluorescent layer 52
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