TWI224372B - Field-effect-controllable semiconductor component and fabricating method thereof - Google Patents

Field-effect-controllable semiconductor component and fabricating method thereof Download PDF

Info

Publication number: TWI224372B
Authority: TW; Taiwan
Prior art keywords: trench; patent application; scope; manufacturing; region
Prior art date: 2002-03-07

Application number

TW092103250A

Other languages

English (en)

Chinese (zh)

Other versions

TW200304188A (en

Inventor

Oliver Haeberlen

Franz Hirler

Manfred Kotek

Andreas Rupp

Original Assignee

Infineon Technologies Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-03-07

Filing date

2003-02-17

Publication date

2004-11-21

2003-02-17 Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag

2003-09-16 Publication of TW200304188A publication Critical patent/TW200304188A/zh

2004-11-21 Application granted granted Critical

2004-11-21 Publication of TWI224372B publication Critical patent/TWI224372B/zh

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 89
238000000034 method Methods 0.000 title claims abstract description 29
238000004519 manufacturing process Methods 0.000 claims abstract description 49
210000000746 body region Anatomy 0.000 claims abstract description 21
238000002513 implantation Methods 0.000 claims abstract description 10
238000005468 ion implantation Methods 0.000 claims description 28
239000000758 substrate Substances 0.000 claims description 26
150000002500 ions Chemical class 0.000 claims description 25
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
239000000463 material Substances 0.000 claims description 13
229920002120 photoresistant polymer Polymers 0.000 claims description 13
239000004020 conductor Substances 0.000 claims description 11
229910052796 boron Inorganic materials 0.000 claims description 10
230000005669 field effect Effects 0.000 claims description 9
235000012239 silicon dioxide Nutrition 0.000 claims description 8
239000000377 silicon dioxide Substances 0.000 claims description 8
-1 arsenic ions Chemical class 0.000 claims description 7
238000005530 etching Methods 0.000 claims description 5
239000007943 implant Substances 0.000 claims description 4
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
229910052785 arsenic Inorganic materials 0.000 claims description 3
238000010438 heat treatment Methods 0.000 claims description 2
239000003989 dielectric material Substances 0.000 claims 2
238000009413 insulation Methods 0.000 claims 2
238000002360 preparation method Methods 0.000 claims 1
239000003990 capacitor Substances 0.000 description 11
238000001465 metallisation Methods 0.000 description 9
239000002019 doping agent Substances 0.000 description 7
150000004706 metal oxides Chemical class 0.000 description 6
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
238000010586 diagram Methods 0.000 description 5
238000009792 diffusion process Methods 0.000 description 5
229910044991 metal oxide Inorganic materials 0.000 description 5
230000015572 biosynthetic process Effects 0.000 description 3
239000013078 crystal Substances 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000005755 formation reaction Methods 0.000 description 3
238000002347 injection Methods 0.000 description 3
239000007924 injection Substances 0.000 description 3
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
230000008859 change Effects 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
238000000151 deposition Methods 0.000 description 2
238000009826 distribution Methods 0.000 description 2
239000002305 electric material Substances 0.000 description 2
230000005611 electricity Effects 0.000 description 2
238000000407 epitaxy Methods 0.000 description 2
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
239000010931 gold Substances 0.000 description 2
229910052737 gold Inorganic materials 0.000 description 2
230000006872 improvement Effects 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
230000003071 parasitic effect Effects 0.000 description 2
230000008569 process Effects 0.000 description 2
239000002689 soil Substances 0.000 description 2
239000004575 stone Substances 0.000 description 2
HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
229910052691 Erbium Inorganic materials 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
230000009471 action Effects 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
239000000969 carrier Substances 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
239000010408 film Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
229910000449 hafnium oxide Inorganic materials 0.000 description 1
WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
230000005405 multipole Effects 0.000 description 1
229910052755 nonmetal Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
230000009467 reduction Effects 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
239000011593 sulfur Substances 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
239000010409 thin film Substances 0.000 description 1
230000007704 transition Effects 0.000 description 1
229910052722 tritium Inorganic materials 0.000 description 1
230000005641 tunneling Effects 0.000 description 1
229910052727 yttrium Inorganic materials 0.000 description 1
VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0869—Shape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Ceramic Engineering (AREA)
High Energy & Nuclear Physics (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Manufacturing & Machinery (AREA)
Electrodes Of Semiconductors (AREA)

TW092103250A 2002-03-07 2003-02-17 Field-effect-controllable semiconductor component and fabricating method thereof TWI224372B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE10210138A DE10210138B4 (de)	2002-03-07	2002-03-07	Durch Feldeffekt steuerbares vertikales Halbleiterbauelement und Verfahren zu seiner Herstellung

Publications (2)

Publication Number	Publication Date
TW200304188A TW200304188A (en)	2003-09-16
TWI224372B true TWI224372B (en)	2004-11-21

Family

ID=27797599

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092103250A TWI224372B (en)	2002-03-07	2003-02-17	Field-effect-controllable semiconductor component and fabricating method thereof

Country Status (2)

Country	Link
DE (1)	DE10210138B4 (de)
TW (1)	TWI224372B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP1536463A1 (de) *	2003-11-28	2005-06-01	STMicroelectronics S.r.l.	Herstellungsverfahren eines Leistungsbauteils mit isoliertem Graben-Gate und mit kontrollierter Kanallänge und entsprechendes Bauteil
DE102004024661B4 (de) *	2004-05-18	2006-04-13	Infineon Technologies Ag	Verfahren zur Herstellung eines Trenchtransistors
DE102004052643B4 (de) *	2004-10-29	2016-06-16	Infineon Technologies Ag	Verfahren zur Herstellung eines lateralen Trenchtransistors
JP2008546216A (ja)	2005-06-10	2008-12-18	フェアチャイルド・セミコンダクター・コーポレーション	電荷平衡電界効果トランジスタ
TWI400757B (zh)	2005-06-29	2013-07-01	Fairchild Semiconductor	形成遮蔽閘極場效應電晶體之方法
DE102006011283B3 (de) *	2006-03-10	2007-09-27	Infineon Technologies Austria Ag	Verfahren zur Herstellung eines Trench-Leistungstransistors und damit hergestellter Trench-Leistungstransistor
DE102007057728B4 (de) *	2007-11-30	2014-04-30	Infineon Technologies Ag	Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur
US8823087B2 (en)	2012-03-15	2014-09-02	Infineon Technologies Austria Ag	Semiconductor device including auxiliary structure and methods for manufacturing a semiconductor device
US8796761B2 (en)	2012-03-15	2014-08-05	Infineon Technologies Austria Ag	Semiconductor device including charged structure and methods for manufacturing a semiconductor device
JP7056163B2 (ja) *	2018-01-17	2022-04-19	富士電機株式会社	半導体装置
CN113594043A (zh) *	2021-09-28	2021-11-02	杭州芯迈半导体技术有限公司	沟槽型mosfet器件及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB9512089D0 (en) *	1995-06-14	1995-08-09	Evans Jonathan L	Semiconductor device fabrication
KR19980014820A (ko) *	1996-08-16	1998-05-25	김광호	트랜치 게이트형 모스 전계효과 트랜지스터 및 그 제조방법
GB9917099D0 (en) *	1999-07-22	1999-09-22	Koninkl Philips Electronics Nv	Cellular trench-gate field-effect transistors
AU5172001A (en) *	2000-03-17	2001-10-03	Gen Semiconductor Inc	Trench dmos transistor having a double gate structure

2002
- 2002-03-07 DE DE10210138A patent/DE10210138B4/de not_active Expired - Fee Related
2003
- 2003-02-17 TW TW092103250A patent/TWI224372B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE10210138B4 (de)	2005-07-21
TW200304188A (en)	2003-09-16
DE10210138A1 (de)	2003-10-02

Legal Events

Date	Code	Title	Description
2018-08-21	MM4A	Annulment or lapse of patent due to non-payment of fees

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