TW564474B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

Info

Publication number: TW564474B
Authority: TW; Taiwan
Prior art keywords: substrate; processing; liquid; patent application; held
Prior art date: 2001-10-16

Application number

TW091123665A

Other languages

English (en)

Chinese (zh)

Inventor

Kenya Ito

Masayuki Kamezawa

Yuki Inoue

Sachiko Kihara

Original Assignee

Ebara Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-10-16

Filing date

2002-10-15

Publication date

2003-12-01

2002-10-15 Application filed by Ebara Corp filed Critical Ebara Corp

2003-12-01 Application granted granted Critical

2003-12-01 Publication of TW564474B publication Critical patent/TW564474B/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 305
239000007788 liquid Substances 0.000 claims abstract description 124
238000000034 method Methods 0.000 claims abstract description 41
230000008569 process Effects 0.000 claims abstract description 38
230000002093 peripheral effect Effects 0.000 claims description 30
238000010438 heat treatment Methods 0.000 claims description 11
238000003860 storage Methods 0.000 claims description 2
238000004381 surface treatment Methods 0.000 claims description 2
241000251468 Actinopterygii Species 0.000 claims 1
238000009434 installation Methods 0.000 claims 1
239000004065 semiconductor Substances 0.000 abstract description 8
239000007789 gas Substances 0.000 description 35
235000012431 wafers Nutrition 0.000 description 35
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
238000005530 etching Methods 0.000 description 12
238000011084 recovery Methods 0.000 description 12
239000010409 thin film Substances 0.000 description 12
238000004140 cleaning Methods 0.000 description 10
239000010408 film Substances 0.000 description 9
239000000126 substance Substances 0.000 description 7
239000002253 acid Substances 0.000 description 6
238000001035 drying Methods 0.000 description 6
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
230000001590 oxidative effect Effects 0.000 description 5
238000005507 spraying Methods 0.000 description 5
239000007800 oxidant agent Substances 0.000 description 4
MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
229910001873 dinitrogen Inorganic materials 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
230000008859 change Effects 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
239000011521 glass Substances 0.000 description 2
239000004973 liquid crystal related substance Substances 0.000 description 2
230000007246 mechanism Effects 0.000 description 2
229920003002 synthetic resin Polymers 0.000 description 2
239000000057 synthetic resin Substances 0.000 description 2
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
239000003638 chemical reducing agent Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000012864 cross contamination Methods 0.000 description 1
238000009713 electroplating Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000012530 fluid Substances 0.000 description 1
239000012634 fragment Substances 0.000 description 1
QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000004745 nonwoven fabric Substances 0.000 description 1
235000006408 oxalic acid Nutrition 0.000 description 1
238000005086 pumping Methods 0.000 description 1
238000004080 punching Methods 0.000 description 1
238000010926 purge Methods 0.000 description 1
238000006722 reduction reaction Methods 0.000 description 1
230000000717 retained effect Effects 0.000 description 1
230000002441 reversible effect Effects 0.000 description 1
238000004904 shortening Methods 0.000 description 1
239000011780 sodium chloride Substances 0.000 description 1
239000002689 soil Substances 0.000 description 1
238000009987 spinning Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

Engineering & Computer Science (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Chemical & Material Sciences (AREA)
Cleaning Or Drying Semiconductors (AREA)
Weting (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

TW091123665A 2001-10-16 2002-10-15 Substrate processing apparatus TW564474B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2001317865A JP2003124180A (ja)	2001-10-16	2001-10-16	基板処理装置

Publications (1)

Publication Number	Publication Date
TW564474B true TW564474B (en)	2003-12-01

Family

ID=19135668

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW091123665A TW564474B (en)	2001-10-16	2002-10-15	Substrate processing apparatus

Country Status (6)

Country	Link
US (1)	US20040216841A1 (ko)
EP (1)	EP1436832A1 (ko)
JP (1)	JP2003124180A (ko)
KR (1)	KR20040053118A (ko)
TW (1)	TW564474B (ko)
WO (1)	WO2003034479A1 (ko)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7938129B2 (en)	2006-02-07	2011-05-10	Dainippon Screen Mfg. Co., Ltd.	Substrate processing apparatus
TWI405623B (zh) *	2005-07-11	2013-08-21	Shibaura Mechatronics Corp	基板之旋轉處理裝置
TWI451519B (zh) *	2010-10-19	2014-09-01	Au Optronics Corp	基板運輸處理方法
US9632427B2 (en)	2003-04-10	2017-04-25	Nikon Corporation	Environmental system including a transport region for an immersion lithography apparatus
US9658537B2 (en)	2003-04-10	2017-05-23	Nikon Corporation	Environmental system including vacuum scavenge for an immersion lithography apparatus
US9786527B2 (en)	2012-08-20	2017-10-10	SCREEN Holdings Co., Ltd.	Substrate processing device and substrate processing method for carrying out chemical treatment for substrate
US10126661B2 (en)	2004-03-25	2018-11-13	Nikon Corporation	Exposure apparatus and device fabrication method

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7883739B2 (en) *	2003-06-16	2011-02-08	Lam Research Corporation	Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
US7636234B2 (en) *	2004-08-09	2009-12-22	Lam Research Corporation	Apparatus configurations for affecting movement of fluids within a microelectric topography processing chamber
DE102005019330A1 (de) *	2005-04-26	2006-11-09	Leica Microsystems Semiconductor Gmbh	Transportsystem für ein scheibenförmiges Objekt und System zur Inspektion eines scheibenförmigen Objekts
KR100777658B1 (ko) *	2006-06-12	2007-11-19	세메스 주식회사	기판처리장치 및 기판을 처리하는 방법
US20080026598A1 (en) *	2006-07-26	2008-01-31	Taek Yong Jang	Semiconductor manufacturing device and method
KR100918663B1 (ko) *	2007-08-22	2009-09-22	주식회사 테라세미콘	반도체 제조 장치
JP5270607B2 (ja)	2010-03-30	2013-08-21	大日本スクリーン製造株式会社	基板処理装置
JP5341939B2 (ja) *	2011-03-31	2013-11-13	大日本スクリーン製造株式会社	基板周縁処理装置および基板周縁処理方法
JP5513432B2 (ja) *	2011-03-31	2014-06-04	大日本スクリーン製造株式会社	基板周縁処理装置及び基板周縁処理方法
JP6985987B2 (ja) *	2018-06-15	2021-12-22	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法および基板処理装置
JP2024065869A (ja)	2022-10-31	2024-05-15	株式会社荏原製作所	基板処理装置、基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3027934A1 (de) *	1980-07-23	1982-02-25	Siemens AG, 1000 Berlin und 8000 München	Verfahren zur einseitigen aetzung von halbleiterscheiben
US4600463A (en) *	1985-01-04	1986-07-15	Seiichiro Aigo	Treatment basin for semiconductor material
JPH02130922A (ja) *	1988-11-11	1990-05-18	Toshiba Corp	半導体基板エッチング装置
JPH0878378A (ja) *	1994-09-08	1996-03-22	Toshiba Corp	半導体基板の表面処理方法
JPH09213674A (ja) *	1996-01-31	1997-08-15	Sumitomo Sitix Corp	半導体基板のエッチング方法とその装置
US5861066A (en) *	1996-05-01	1999-01-19	Ontrak Systems, Inc.	Method and apparatus for cleaning edges of contaminated substrates
DE19622015A1 (de) *	1996-05-31	1997-12-04	Siemens Ag	Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
US6398975B1 (en) *	1997-09-24	2002-06-04	Interuniversitair Microelektronica Centrum (Imec)	Method and apparatus for localized liquid treatment of the surface of a substrate
JP3731634B2 (ja) *	1998-12-16	2006-01-05	大日本スクリーン製造株式会社	基板処理装置
JP3395696B2 (ja) *	1999-03-15	2003-04-14	日本電気株式会社	ウェハ処理装置およびウェハ処理方法

2001
- 2001-10-16 JP JP2001317865A patent/JP2003124180A/ja not_active Withdrawn
2002
- 2002-10-15 US US10/485,983 patent/US20040216841A1/en not_active Abandoned
- 2002-10-15 KR KR10-2004-7003166A patent/KR20040053118A/ko not_active Application Discontinuation
- 2002-10-15 EP EP02801560A patent/EP1436832A1/en not_active Withdrawn
- 2002-10-15 TW TW091123665A patent/TW564474B/zh not_active IP Right Cessation
- 2002-10-15 WO PCT/JP2002/010655 patent/WO2003034479A1/en not_active Application Discontinuation

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US9632427B2 (en)	2003-04-10	2017-04-25	Nikon Corporation	Environmental system including a transport region for an immersion lithography apparatus
US9658537B2 (en)	2003-04-10	2017-05-23	Nikon Corporation	Environmental system including vacuum scavenge for an immersion lithography apparatus
US9910370B2 (en)	2003-04-10	2018-03-06	Nikon Corporation	Environmental system including a transport region for an immersion lithography apparatus
US9977350B2 (en)	2003-04-10	2018-05-22	Nikon Corporation	Environmental system including vacuum scavenge for an immersion lithography apparatus
US10126661B2 (en)	2004-03-25	2018-11-13	Nikon Corporation	Exposure apparatus and device fabrication method
TWI405623B (zh) *	2005-07-11	2013-08-21	Shibaura Mechatronics Corp	基板之旋轉處理裝置
US7938129B2 (en)	2006-02-07	2011-05-10	Dainippon Screen Mfg. Co., Ltd.	Substrate processing apparatus
TWI451519B (zh) *	2010-10-19	2014-09-01	Au Optronics Corp	基板運輸處理方法
US9786527B2 (en)	2012-08-20	2017-10-10	SCREEN Holdings Co., Ltd.	Substrate processing device and substrate processing method for carrying out chemical treatment for substrate

Also Published As

Publication number	Publication date
US20040216841A1 (en)	2004-11-04
EP1436832A1 (en)	2004-07-14
JP2003124180A (ja)	2003-04-25
KR20040053118A (ko)	2004-06-23
WO2003034479A1 (en)	2003-04-24

Legal Events

Date	Code	Title	Description
2004-04-08	GD4A	Issue of patent certificate for granted invention patent
2009-09-11	MM4A	Annulment or lapse of patent due to non-payment of fees

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