TW564474B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
- Publication number
- TW564474B TW564474B TW091123665A TW91123665A TW564474B TW 564474 B TW564474 B TW 564474B TW 091123665 A TW091123665 A TW 091123665A TW 91123665 A TW91123665 A TW 91123665A TW 564474 B TW564474 B TW 564474B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- processing
- liquid
- patent application
- held
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 305
- 239000007788 liquid Substances 0.000 claims abstract description 124
- 238000000034 method Methods 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 38
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims description 2
- 241000251468 Actinopterygii Species 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 238000005530 etching Methods 0.000 description 12
- 238000011084 recovery Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001317865A JP2003124180A (ja) | 2001-10-16 | 2001-10-16 | 基板処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW564474B true TW564474B (en) | 2003-12-01 |
Family
ID=19135668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091123665A TW564474B (en) | 2001-10-16 | 2002-10-15 | Substrate processing apparatus |
Country Status (6)
Country | Link |
---|---|
US (1) | US20040216841A1 (ko) |
EP (1) | EP1436832A1 (ko) |
JP (1) | JP2003124180A (ko) |
KR (1) | KR20040053118A (ko) |
TW (1) | TW564474B (ko) |
WO (1) | WO2003034479A1 (ko) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7938129B2 (en) | 2006-02-07 | 2011-05-10 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
TWI405623B (zh) * | 2005-07-11 | 2013-08-21 | Shibaura Mechatronics Corp | 基板之旋轉處理裝置 |
TWI451519B (zh) * | 2010-10-19 | 2014-09-01 | Au Optronics Corp | 基板運輸處理方法 |
US9632427B2 (en) | 2003-04-10 | 2017-04-25 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US9658537B2 (en) | 2003-04-10 | 2017-05-23 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US9786527B2 (en) | 2012-08-20 | 2017-10-10 | SCREEN Holdings Co., Ltd. | Substrate processing device and substrate processing method for carrying out chemical treatment for substrate |
US10126661B2 (en) | 2004-03-25 | 2018-11-13 | Nikon Corporation | Exposure apparatus and device fabrication method |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7883739B2 (en) * | 2003-06-16 | 2011-02-08 | Lam Research Corporation | Method for strengthening adhesion between dielectric layers formed adjacent to metal layers |
US7636234B2 (en) * | 2004-08-09 | 2009-12-22 | Lam Research Corporation | Apparatus configurations for affecting movement of fluids within a microelectric topography processing chamber |
DE102005019330A1 (de) * | 2005-04-26 | 2006-11-09 | Leica Microsystems Semiconductor Gmbh | Transportsystem für ein scheibenförmiges Objekt und System zur Inspektion eines scheibenförmigen Objekts |
KR100777658B1 (ko) * | 2006-06-12 | 2007-11-19 | 세메스 주식회사 | 기판처리장치 및 기판을 처리하는 방법 |
US20080026598A1 (en) * | 2006-07-26 | 2008-01-31 | Taek Yong Jang | Semiconductor manufacturing device and method |
KR100918663B1 (ko) * | 2007-08-22 | 2009-09-22 | 주식회사 테라세미콘 | 반도체 제조 장치 |
JP5270607B2 (ja) | 2010-03-30 | 2013-08-21 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP5341939B2 (ja) * | 2011-03-31 | 2013-11-13 | 大日本スクリーン製造株式会社 | 基板周縁処理装置および基板周縁処理方法 |
JP5513432B2 (ja) * | 2011-03-31 | 2014-06-04 | 大日本スクリーン製造株式会社 | 基板周縁処理装置及び基板周縁処理方法 |
JP6985987B2 (ja) * | 2018-06-15 | 2021-12-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2024065869A (ja) | 2022-10-31 | 2024-05-15 | 株式会社荏原製作所 | 基板処理装置、基板処理方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3027934A1 (de) * | 1980-07-23 | 1982-02-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur einseitigen aetzung von halbleiterscheiben |
US4600463A (en) * | 1985-01-04 | 1986-07-15 | Seiichiro Aigo | Treatment basin for semiconductor material |
JPH02130922A (ja) * | 1988-11-11 | 1990-05-18 | Toshiba Corp | 半導体基板エッチング装置 |
JPH0878378A (ja) * | 1994-09-08 | 1996-03-22 | Toshiba Corp | 半導体基板の表面処理方法 |
JPH09213674A (ja) * | 1996-01-31 | 1997-08-15 | Sumitomo Sitix Corp | 半導体基板のエッチング方法とその装置 |
US5861066A (en) * | 1996-05-01 | 1999-01-19 | Ontrak Systems, Inc. | Method and apparatus for cleaning edges of contaminated substrates |
DE19622015A1 (de) * | 1996-05-31 | 1997-12-04 | Siemens Ag | Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage |
US6398975B1 (en) * | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
JP3731634B2 (ja) * | 1998-12-16 | 2006-01-05 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP3395696B2 (ja) * | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
-
2001
- 2001-10-16 JP JP2001317865A patent/JP2003124180A/ja not_active Withdrawn
-
2002
- 2002-10-15 US US10/485,983 patent/US20040216841A1/en not_active Abandoned
- 2002-10-15 KR KR10-2004-7003166A patent/KR20040053118A/ko not_active Application Discontinuation
- 2002-10-15 EP EP02801560A patent/EP1436832A1/en not_active Withdrawn
- 2002-10-15 TW TW091123665A patent/TW564474B/zh not_active IP Right Cessation
- 2002-10-15 WO PCT/JP2002/010655 patent/WO2003034479A1/en not_active Application Discontinuation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9632427B2 (en) | 2003-04-10 | 2017-04-25 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US9658537B2 (en) | 2003-04-10 | 2017-05-23 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US9910370B2 (en) | 2003-04-10 | 2018-03-06 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US9977350B2 (en) | 2003-04-10 | 2018-05-22 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US10126661B2 (en) | 2004-03-25 | 2018-11-13 | Nikon Corporation | Exposure apparatus and device fabrication method |
TWI405623B (zh) * | 2005-07-11 | 2013-08-21 | Shibaura Mechatronics Corp | 基板之旋轉處理裝置 |
US7938129B2 (en) | 2006-02-07 | 2011-05-10 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
TWI451519B (zh) * | 2010-10-19 | 2014-09-01 | Au Optronics Corp | 基板運輸處理方法 |
US9786527B2 (en) | 2012-08-20 | 2017-10-10 | SCREEN Holdings Co., Ltd. | Substrate processing device and substrate processing method for carrying out chemical treatment for substrate |
Also Published As
Publication number | Publication date |
---|---|
US20040216841A1 (en) | 2004-11-04 |
EP1436832A1 (en) | 2004-07-14 |
JP2003124180A (ja) | 2003-04-25 |
KR20040053118A (ko) | 2004-06-23 |
WO2003034479A1 (en) | 2003-04-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |